Substrate processing apparatus and method with factory interface chamber filter purification

Abstract

An electronic device processing apparatus includes a factory interface chamber with environmental control and a purge control apparatus that allows for purging of a chamber filter. The filter purging apparatus includes a chamber filter and a flush gas supply configured to supply a flush gas to the chamber filter when an access door to the factory interface chamber is opened to allow for personnel safe maintenance access to the factory interface chamber. The supply of flush gas to the chamber filter minimizes moisture contamination of the chamber filter by factory ambient air when the access door is opened, allowing for rapid resumption of substrate processing after factory interface maintenance. Purge control methods and apparatus are described, among other aspects.

Description

[0001] This application is a divisional application of the invention patent application filed on February 12, 2019, with application number 201980014953.4 and invention title "Substrate Processing Equipment and Method with Factory Interface Chamber Filter for Purification".

[0002] Related applications

[0003] This application claims priority to U.S. Nonprovisional Application No. 15 / 905,959, filed February 27, 2018, entitled “SUBSTRATE PROCESSING APPARATUSAND METHODS WITH FACTORY INTERFACE CHAMBER FILTER PURGE” (Attorney’s Case No. 44014871US01), the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0004] The implementation relates to the manufacture of electronic devices, and more specifically, to factory interface equipment and methods including environmental control. Background Technology

[0005] In semiconductor component manufacturing, substrate handling is performed within processing tools. The substrate travels between processing tools in a substrate carrier (e.g., a front-opening standard compartment or FOUP), which may dock to a tool's factory interface (also referred to as an "equipment front-end module (EFEM)"). The factory interface includes a factory interface chamber, which may contain a loading / unloading robot operable to transfer the substrate between a corresponding FOUP docked to the factory interface and one or more processing chambers. In some vacuum tools, the substrate travels from the substrate carrier through the factory interface chamber to a loading locking device and then into a processing chamber for handling.

[0006] Recently, the semiconductor processing industry has seen initiatives to control the environment within factory interfaces, such as by supplying purge gases (e.g., inert gases) to the factory interface chamber or the wafer FOUP. However, these systems may encounter performance issues.

[0007] Therefore, there is a need for factory interface equipment and factory interface operation methods with improvement capabilities. Summary of the Invention

[0008] In one aspect, a factory interface device is provided. The factory interface device includes a first wall having one or more loading ports configured to dock one or more substrate carriers; additional walls forming a factory interface chamber, wherein at least one of these walls includes an access door configured to allow personnel access to the factory interface chamber; an environmental control system coupled to the factory interface chamber and configured to supply a purifying gas to control one or more environmental conditions within the factory interface chamber during substrate transport through the factory interface chamber; a chamber filter configured to filter the purifying gas supplied to the factory interface chamber; and a filter purification device configured to supply flushing gas to the chamber filter when the access door is opened to minimize moisture contamination of the chamber filter by ambient air.

[0009] In another aspect, a chamber filter purification device is provided. The chamber filter purification device includes a plant interface chamber including a passageway door; a chamber filter configured to filter purified gas supplied to the plant interface chamber; and a filter purification device configured to supply flushing gas to the chamber filter when the passageway door is opened, in order to minimize moisture contamination of the chamber filter by ambient air.

[0010] In terms of method, a purification control method is provided. The purification control method includes providing a plant interface chamber with a passageway door configured to provide personnel maintenance access to the plant interface chamber; providing a chamber filter configured to filter the flow of purification gas supplied to the plant interface chamber; and supplying flushing gas to the chamber filter when the passageway door is opened to minimize moisture contamination of the chamber filter by ambient air.

[0011] Numerous other aspects are provided by these and other embodiments of this disclosure. Further features and aspects of embodiments of this disclosure will become more apparent from the following detailed description, drawings, and claims. Attached Figure Description

[0012] The accompanying drawings described below are for illustrative purposes only and are not necessarily drawn to scale. These drawings are not intended to limit the scope of this disclosure in any way.

[0013] Figure 1 The illustration shows a schematic top view of an electronic device processing apparatus according to one or more embodiments, the electronic device processing apparatus including environmental control of a factory interface chamber and including factory interface chamber filter purification capability.

[0014] Figure 2 The illustration shows a first partial cross-sectional view of an electronic device processing apparatus including a factory interface chamber filter purification capability according to one or more embodiments.

[0015] Figure 3 The illustration shows another partial cross-sectional view of an electronic device processing apparatus including a factory interface chamber filter purification capability according to one or more embodiments.

[0016] Figure 4 The illustration shows a flowchart of a purification control method according to one or more embodiments. Detailed Implementation

[0017] Reference will now be made in detail to exemplary embodiments illustrated in the accompanying drawings. Where possible, the same reference numerals will be used in all drawings to indicate the same or similar parts in all plurality of views. Unless otherwise specifically stated, features of the various embodiments described herein can be combined with each other.

[0018] Existing electronic device manufacturing systems may encounter problems when high relative humidity levels, high oxygen (O2) levels, high levels of other chemical contaminants, excessively high temperatures, or other environmental factors are observed. Specifically, exposure of substrates to high humidity levels, relatively high O2 levels, or other chemical contaminants and particulate matter can adversely affect substrate properties.

[0019] Therefore, certain electronic device processing equipment provides efficiency and / or improved processing by controlling the environmental conditions exposed to the substrate as it passes through a factory interface chamber. The factory interface receives substrates from one or more substrate carriers mated to a wall of the factory interface (e.g., a front wall), and a loading / unloading robot can transfer the substrate for processing, such as transferring the substrate to another opening (e.g., one or more loading locking devices) in another wall of the factory interface (e.g., a rear wall). In such a factory interface with environmental control, purifying gases (such as argon (Ar), nitrogen (N2), or helium (He)) can be used to purify the air, moisture, and / or contaminants from the factory interface chamber.

[0020] One or more environmental parameters (e.g., relative humidity, temperature, O2 level, inert gas level, or chemical contaminant level) can be monitored and controlled by supplying a purified gas, and the opening of the corresponding FOUP connected to the plant interface wall can be delayed until certain preconditions related to the environment at the plant interface are met.

[0021] However, sometimes maintenance personnel may enter the plant interface chamber to servicing various devices within, such as loading port openers, loading / unloading robots, slit valves, and the like. In these cases, the access door to the plant interface chamber is opened to allow maintenance personnel to perform the servicing. The flow of purge gas is stopped during these maintenance intervals.

[0022] Therefore, the inventors have discovered that chamber filters constructed to filter particulates from purification gases can become contaminated with moisture during these maintenance intervals, as ambient air containing moisture (sometimes up to 40% relative humidity at room temperature (RT)) from the plant environment is present in the plant interface chamber due to the passage door being open.

[0023] To improve one or more of the problems listed above, particularly moisture contamination of chamber filters, this disclosure provides plant interface devices, plant interface purification devices, and purification control methods.

[0024] This article references Figures 1 to 4 Further details are provided regarding the example factory interface equipment, factory interface purification equipment, and purification control methods. Figures 1 to 3 The illustration shows a schematic diagram of an example embodiment of an electronic device processing apparatus 100 according to one or more embodiments of the present disclosure. The electronic device processing apparatus 100 may include a processing section 101 configured to process a substrate 245. The processing section 101 may include a host housing having a housing wall defining a transfer chamber 102. A transfer robot 104 (in...) Figure 1 The substrate 245 (shown as a dashed circle in the diagram) may be at least partially housed within the transfer chamber 102. The transfer robot 104 may be configured and adapted to place the substrate 245 into or remove the substrate 245 from the processing chambers 106A to 106F via its operation. As used herein, substrate means an article used to fabricate electronic devices or circuit components, such as a silicon dioxide disk or wafer, a patterned or masked wafer, a glass plate, or the like.

[0025] In the described embodiments, the transfer robot 104 may be any suitable type of robot adapted to maintain and accessible from various chambers (such as the dual chambers shown) coupled to and accessible from the transfer chamber 102, such as (for example) the robot disclosed in the text of U.S. Patent Publication No. 2010 / 0178147. Other robot types may be used.

[0026] The movement of the various arm components of the transfer robot 104 can be controlled by appropriate commands provided to a drive assembly (not shown) containing multiple drive motors of the transfer robot 104, based on commands from a robot controller (not shown). Signals from the robot controller cause the movement of the various components of the transfer robot 104. Appropriate feedback mechanisms can be provided to one or more of these components via various sensors (such as position encoders or the like).

[0027] The shape of the transfer chamber 102 in the described embodiment may generally be square or slightly rectangular. However, other suitable shapes of the host housing and suitable numbers of facets and processing chambers are possible, such as octagons, hexagons, heptagons, and the like. The substrate may be destined for one or more of processing chambers 106A to 106F, which may be constructed and operable to perform one or more processes on the substrate transferred therein. The processes performed by processing chambers 106A to 106F may be any suitable processes, such as plasma vapor deposition (PVD) or chemical vapor deposition (CVD), etching, annealing, pre-cleaning, removal of metal or metal oxides, or the like. Other processes may be performed on the substrate 245 therein.

[0028] The electronic device processing apparatus 100 may further include a factory interface 108, which includes environmental controls. A substrate 245 may be received from the factory interface 108 into a transfer chamber 102 and also exit the transfer chamber 102 into the factory interface 108 after processing. Entry into and exit from the transfer chamber 102 may be via an opening, or, in the case of a vacuum tool, via a load locking device 112 coupled to a wall (e.g., rear wall 108R) of the factory interface 108. The load locking device 112 may include one or more load locking chambers (e.g., load locking chambers 112A, 112B). The load locking chambers 112A, 112B included in the load locking device 112 may be monolithic load locking (SWLL) chambers, multi-wafer load locking chambers, or even batch load locking devices, and the like.

[0029] The factory interface 108 may be any suitable housing and may have sidewalls forming the factory interface chamber 108C (these sidewalls may include a rear wall 108R, a front wall 108F opposite the rear wall 108R, two sidewalls, a top, and a bottom). One or more of these walls (such as sidewalls) may include a access door 124 that allows maintenance personnel to enter the factory interface chamber 108C when servicing (repairing, altering, cleaning, or the like) components within the factory interface chamber 108C.

[0030] One or more loading ports 115 may be provided on one or more of the walls of the factory interface 108 (e.g., front wall 108F), and the one or more loading ports 115 may be configured and adapted to receive one or more substrate carriers 116 (e.g., front-opening standard compartments or FOUPs, or similar) therein. The factory interface chamber 108C may include a loading / unloading robot 117 of known configuration (in Figure 1 (shown as a dashed box in the image). The loading / unloading robot 117 may be configured and operable to remove substrates 245 from one or more substrate carriers 116 once the carrier door 216D of the substrate carrier 116 is opened, and to feed the substrates 245 through the factory interface chamber 108C and into one or more openings (e.g., one or more loading locking chambers 112A, 112B). Any suitablely configured opening that allows the transfer of substrates 245 between the factory interface chamber 108C and the processing chambers 106A to 106F may be used. Any number of processing chambers and their configurations may be used.

[0031] In some vacuum implementations, the transfer chamber 102 may include slit valves at the inlet / outlet of each of the processing chambers 106A to 106F. Similarly, the loading locking chambers 112A, 112B in the loading locking device 112 may include an internal loading locking slit valve 223i and an external loading locking slit valve 223o. The slit valves 223o, 223i are adapted to open and close when placing the substrate 245 into or removing it from the processing chambers 106A to 106F and the loading locking chambers 112A, 112B. The slit valves 223o, 223i may be of any suitable known construction, such as an L-shaped movable slit valve.

[0032] In the described embodiment, a factory interface environment control device 118 is provided. The factory interface environment control device 118 provides environmental control of the gaseous environment within the factory interface chamber 108C by providing an environmentally controlled atmosphere to the factory interface chamber 108C as the substrate 245 is conveyed through the factory interface chamber 108C. Specifically, the factory interface environment control device 118 is coupled to the factory interface 108 and is operable to monitor and / or control one or more environmental conditions within the factory interface chamber 108C.

[0033] In some embodiments, and at certain times, the plant interface chamber 108C may receive a purge gas therein. For example, the purge gas may be an inert gas, such as argon (Ar), nitrogen (N2), or helium (He). The purge gas may be supplied from a purge gas supplier 119. The purge gas supplier 119 may be coupled to the plant interface chamber 108C via any suitable component, such as one or more conduits, including a valve 122, such as an on / off valve or mass flow controller in one or more conduits. However, in some embodiments, where exposure of the substrate 245 to O2 is not a primary consideration, the purge gas may be clean, dry air, such as that supplied from a clean, dry air supplier 120. Clean, dry air, as used herein, is defined as dry air containing few particulates. Clean, dry air may include particles no larger than 2 micrometers and may have a relatively low relative humidity level compared to the ambient air in the plant environment outside the plant interface chamber 108C. Specifically, by suitable measurement, clean, dry air may have a relative humidity level of 10% or less at room temperature. Additionally, the clean, dry air may have a relative humidity level of 5% or less at room temperature. In some embodiments, the clean, dry air may be ultra-clean dry air, having less than 500 ppmV of H2O, or even less than 100 ppmV, or even less than 10 ppmV of H2O. In some embodiments, the clean, dry air may have particles no larger than 0.05 micrometers.

[0034] More specifically, the plant interface environment control device 118 can control at least one of the following in the environment within the plant interface chamber 108C:

[0035] 1) Relative humidity level (%RH, at room temperature),

[0036] 2) Temperature (T),

[0037] 3) The amount of O2,

[0038] 4) The amount of inert gas,

[0039] 5) The amount of clean, dry air, or

[0040] 6) The amount of chemical contaminants (e.g., amines, alkalis, a certain amount of one or more volatile organic compounds (VOCs), or similar).

[0041] Other environmental conditions of the plant interface chamber 108C can be monitored and / or controlled, such as the gas flow rate to or from the plant interface chamber 108C, the chamber pressure within the plant interface chamber 108C, or both.

[0042] The plant interface environmental control device 118 includes a controller 125, which includes a suitable processor, memory, and electronic peripherals configured to receive one or more signal inputs from one or more sensors 130 (e.g., relative humidity sensor, oxygen sensor, chemical composition sensor, pressure sensor, flow sensor, temperature sensor, and / or the like) and control the flow through one or more valves 122 via suitable control signals from the controller 125.

[0043] The controller 125 may execute a closed-loop or other suitable control scheme. In some embodiments, the control scheme may change the flow rate of the purge gas introduced into the factory interface chamber 108C in response to measured conditions from one or more sensors 130. In another embodiment, the control scheme may determine when to convey the substrate 245 through the factory interface chamber 108C based on one or more measured environmental conditions present within the factory interface chamber 108C.

[0044] In one or more embodiments, the plant interface environmental control device 118 can monitor relative humidity (RH) by sensing a measurement of any suitable relative humidity (RH) in the plant interface chamber 108C. A relative humidity sensor 130 may be configured and adapted to sense the relative humidity (RH) in the plant interface chamber 108C. Any suitable type of relative humidity sensor, such as a capacitive or other sensor, can be used. For example, the RH sensor 130 may be located within the plant interface chamber 108C or within a conduit connected to the plant interface chamber 108C. A controller 125 can monitor RH, and when a measured RH signal value provided to the controller 125 is higher than a predetermined low RH threshold, the carrier gate 216D of one or more substrate carriers 116 coupled to the loading port of the plant interface 108 will remain closed. Similarly, the slit valve 223o of the loading locking device 112 may remain closed until a measured RH signal level below the predetermined low RH threshold is achieved. Other measurements for humidity control may be measured and used as the predetermined low RH threshold, such as ppmV of H2O.

[0045] In one or more embodiments, depending on the permissible moisture level of a particular process performed on substrate 245, the predetermined lower threshold RH value may be a moisture level of less than 1,000 ppmV H2O, less than 500 ppmV H2O, less than 100 ppmV H2O, or even less than 10 ppmV H2O.

[0046] The RH level can be reduced by flowing an appropriate amount of purge gas from purge gas supplier 119 into the plant interface chamber 108C. As described herein, the purge gas can be an inert gas from purge gas supplier 119, which can be argon, nitrogen (N2), helium, or a mixture thereof. Supplying dry nitrogen (N2) is very effective in controlling the environmental conditions within the plant interface chamber 108C. A compressed volumetric inert gas with a low H2O level (as described herein) can be used as purge gas supplier 119. The inert gas supplied from purge gas supplier 119 can fill the plant interface chamber 108C during substrate processing as the substrate 245 is conveyed through it.

[0047] In some cases, the flow rate of the purge gas supplied to the plant interface chamber 108C can be monitored by a suitable flow sensor (not shown) on the delivery line and / or a pressure sensor located within the plant interface chamber 108C, or both. A flow rate of 400 SLM or greater can be provided by adjusting valve 122 coupled to the purge gas supplier 119 in response to a control signal from controller 125. For example, a pressure greater than approximately 500 Pa can be maintained within the plant interface chamber 108C. The flow of purge gas (e.g., N2 or other inert gas) into the plant interface chamber 108C effectively reduces the relative humidity (RH) level within the plant interface chamber 108C. When a low RH threshold is met, carrier door 216D and / or one or more loading lock slit valves 223o of loading lock chambers 112A, 112B can be opened. This helps ensure that substrate 245 exiting substrate carrier 116, exiting loading gate chambers 112A, 112B, and any substrate 245 passing through factory interface chamber 108C are only exposed to a suitable low-humidity environment.

[0048] In another example, an environmental prerequisite may be met, for instance, when the measured oxygen (O2) level in the plant interface chamber 108C drops below a predetermined level. The oxygen (O2) level may be sensed by one or more sensors 130, such as an oxygen sensor. If the measured oxygen (O2) level drops below a predetermined oxygen threshold level (e.g., less than 50 ppm O2, less than 10 ppm O2, less than 5 ppm O2, or even less than 3 ppm O2, or even lower), substrate exchange may be performed through the plant interface chamber 108C. Other suitable oxygen level thresholds may be used depending on the process being performed. If the predetermined oxygen threshold level in the plant interface chamber 108C is not met, the controller 125 will send a control signal to a valve 122 coupled to a purge gas supplier 119, and purge gas will flow into the plant interface chamber 108C until the predetermined low oxygen threshold level is met, for example, by the controller 125 receiving a signal from the O2 sensor 130.

[0049] When a predetermined low oxygen threshold level is met, carrier door 216D and / or loading lock slit valve 223o of one or more loading lock chambers 112A, 112B can be opened. This helps ensure that substrates 245 exiting substrate carrier 116, exiting loading lock chambers 112A, 112B, and any substrates 245 through factory interface chamber 108C are exposed to a relatively low oxygen level.

[0050] In another example, environmental prerequisites may be met, for instance, when the measured temperature level in the factory interface chamber 108C (e.g., the temperature of the substrate 245 in the factory interface chamber 108C) drops below a predetermined temperature threshold level (e.g., below 100 degrees Celsius or even lower). In one or more embodiments, one or more sensors 130 include temperature sensors configured and adapted to sense the temperature within the factory interface chamber 108C. In some embodiments, the temperature sensor 130 may be positioned close to the path of the substrate 245 as it passes through the factory interface chamber 108C on the loading / unloading robot 117. In some embodiments, the temperature sensor 130 may be a directional temperature sensor, such as a laser sensor used to determine the degree to which the substrate 245 has been cooled. Once the predetermined low-temperature threshold level is met, the moderately cooled substrate 245 may be loaded into the substrate carrier 116 for transport.

[0051] In another example, for instance, an environmental prerequisite may be met when the measured level of chemical contaminants in the plant interface chamber 108C falls below a predetermined low threshold level. In one or more embodiments, one or more sensors 130 may include one or more chemical sensors configured and adapted to sense the amount of one or more chemical contaminants (e.g., amines, bases, a quantity of one or more volatile organic compounds (VOCs), or the like) contained within the plant interface chamber 108C. In some embodiments, once the predetermined chemical threshold level is met, the substrate 245 may be unloaded from the substrate carrier 116 or otherwise transported through the plant interface chamber 108C.

[0052] In the embodiments described herein, in addition to the factory interface environment control device 118, the electronic device processing device 100 may further include a filter purification device 103. The filter purification device 103 includes a clean dry air (CDA) supply 120 coupled to a portion of the factory interface chamber 108C. Specifically, the CDA supply 120 may include a conduit and one or more valves 121 configured and adapted to control the flow of a flushing gas (such as clean dry air from the CDA supply 120) to a chamber filter 132 contained within the factory interface chamber 108C. The flushing gas, including the clean dry air flow, may be coupled and supplied to a gas chamber 235, which is part of the factory interface chamber 108C and located at a point upstream of the chamber filter 132. The chamber filter 132 separates the gas chamber 235 from a portion of the factory interface chamber 108C through which the substrate 245 passes.

[0053] Chamber filter 132 is configured to filter purified gas supplied from purified gas supplier 119 to the processing area of ​​plant interface chamber 108. Specifically, chamber filter 132 is a filter capable of filtering extremely fine particles from the purified gas stream, such that any particles contained in purified gas supplier 119, supplier conduit, and / or valve 122 are not exposed to the substrate 245 through plant interface chamber 108C. Chamber filter 132 can be of any suitable construction and can, for example, be a high-efficiency particulate air (HEPA) filter. HEPA filters remove more than 99.97% of particles 0.3 micrometers or larger. However, various different types of HEPA filters with chamber filter 132 exist with particulate filtration capabilities up to 99.9% or higher.

[0054] CDA supplier 120 may be a flushing gas and a supplier of air containing a relatively low level of moisture (H2O). CDA supplier 120 may be coupled to factory interface chamber 108C via suitable conduits and one or more valves 121 (such as mass flow controllers or on / off valves), and specifically to air chamber chamber 235. Based on one measurement method, clean dry air is air having a relative humidity level of less than 10% or even less than 5% at room temperature. Based on another measurement method, in some embodiments, clean dry air is air having a relative humidity level containing less than 1000 ppmV H2O, or even less than 100 ppmV H2O, or even less than 10 ppmV H2O. In this embodiment, the clean dry air (CDA) has a relatively low level of moisture (H2O), which will not significantly affect the delivery of substrate 245 through factory interface chamber 108C.

[0055] More specifically, the filter purification device 103 is configured to supply flushing gas to the chamber filter 132 when the passage door 124 is opened. In some embodiments, the flushing gas may be a different gas from the purifying gas. However, in other embodiments, both the purifying gas and the flushing gas may be the same clean, dry air. The flushing gas flow can be initiated before the passage door 124 is opened and after the purifying gas flow from the purifying gas supplier 119 is stopped. The flushing gas flow from the clean, dry air supplier 120 can continue to flow for the entire duration of the passage door 124 being open.

[0056] When the passage door 124 is opened, allowing flushing gas to flow through the chamber filter 132 minimizes contamination of the chamber filter 132 by humidity (moisture) contained in the ambient air entering the plant interface chamber 108C from the plant environment outside the plant interface 108 via the passage door 124. In the described embodiment, the flushing gas may be clean, dry air from the CDA supplier 120. In one or more embodiments, the purifying gas may be an inert gas from the purifying gas supplier 119, and the flushing gas may be clean, dry air from the CDA supplier 120. In a particularly effective embodiment, the purifying gas may be N2 gas from the purifying gas supplier 119, and the flushing gas may be clean, dry air from the CDA supplier 120. In other embodiments, the purifying gas may be clean, dry air, and the flushing gas may be clean, dry air.

[0057] In some embodiments, the access door 124 may include an interlocking device that allows the access door 124 to be opened only when a suitable environment is present in the plant interface chamber 108C. For example, the interlocking device may be activated to allow the access door 124 to open when: after the flow of inert gas from the purge gas supply 119 has stopped and the flow of flushing gas (e.g., clean and breathable gas) from the CDA supply 120 has started; and when the oxygen sensor 130, constructed and adapted to sense the oxygen (O2) level inside or outside the plant interface chamber 108C, measures a value above a safe opening threshold (e.g., above about 20% O2) that is safe for personnel to be exposed therein.

[0058] In one implementation, when a person attempts to enter the plant interface chamber 108C and initiates an entry request, the controller 125 of the plant interface environment control device 118 can stop the flow of purified gas via a control signal to close valve 122 and start the flow of clean, dry air from CDA supplier 120 via open valve 121. During this transition, the inert gas environment is vented via exhaust device 250 and effectively replaced with clean, dry air. Additionally, during this transition, valve 340 in return passage 324C is closed. When sensor 130 detects that the oxygen level in plant interface chamber 108C has reached a predetermined, safe oxygen level, the door interlock device (e.g., electromechanical lock) holding passage door 124 closed can be unlocked to allow passage door 124 to be opened (e.g., ...). Figure 1 (shown by dashed lines), thus allowing maintenance personnel to enter the factory interface chamber 108C to service one or more components therein. A continuous flow of clean, dry air is maintained throughout the service period.

[0059] As best in Figure 3 As seen, sometimes a portion of the gas circulation path may pass through channel door 124. For example, in the initial stage before channel door 124 is opened, purge gas may enter from plant interface chamber 108C into inlet 236, through return channel 324C (e.g., a pipe) formed in channel door 124, and then through outlet 238 into gas chamber chamber 235. For example, inlet 236 from plant interface chamber 108C may be located at or near the bottom of channel door 124.

[0060] When the channel door 124 is closed after maintenance, valve 340 in the return path (e.g., in return channel 324C) remains closed, and the flow of CDA air continues but is discharged from interface chamber 108C via exhaust device 250, thus eventually displacing moisture through the flow of CDA air. This flow of clean, dry air continues until the atmosphere in the plant interface chamber 108C is again acceptablely dry. For example, CDA flow can be stopped and purge gas flow can be started after the channel door 124 is closed only after the low threshold level of relative humidity (%RH, at RT) is reached again. Alternatively, purge gas from purge gas supplier 119 can be started once the channel door 124 is closed, and the purge gas can displace moisture to exhaust device 250. In this case, valve 340 remains closed until the desired low threshold of %RH at RT is reached. After the previously established low threshold of %RH at RT is reached, valve 340 can be opened, and purge gas recirculation via return channel 324C can occur.

[0061] In the depicted embodiment, the factory interface environment control device 118 may also include a carrier purification device 218. The carrier purification device 218 provides a flow of purification gas to the carrier chamber 241 of the substrate carrier 116. The carrier purification device 218 includes a purification gas supplier (e.g., purification gas supplier 119) and a plurality of supply conduits 246, 248 and valves coupled thereto. The plurality of supply conduits 246, 248 and valves supply purification gas to the carrier chamber 241 at certain times in response to a control signal from the controller 125. For example, the supply of purification gas from the purification gas supplier 119 may be provided to the carrier chamber 241 just before the carrier door 216D of the substrate carrier 116 is opened, so as to purify the environment within the substrate carrier 116 to meet certain environmental prerequisites. These environmental prerequisites may be met before the substrate carrier door 216G is opened, thereby allowing the substrate 245 to be transferred from the substrate carrier 116 to the factory interface chamber 108C. The carrier purification device 218 may include a set of supply conduits 246, 248 for each substrate carrier 116. A purification gas (e.g., an inert gas) may be supplied at a suitable flow rate (e.g., 1 slm) to purify the substrate carrier 116. After appropriate purification has brought environmental conditions to a desired predetermined low level (e.g., %RH, at RT), the carrier door 216D may be opened. Purification of the carrier chamber 241 may be performed so that the carrier environment (which may contain undesirable levels of O2, moisture, particulates, or other volatile gases and materials) does not enter and contaminate the plant interface chamber 108C.

[0062] In some embodiments, surface clamps 233 (indicated by arrows) may be included to engage the flanges of the substrate carrier 116, such as at two or more locations (e.g., around the periphery). Surface clamps 233 are used to seal the flanges to the front wall 108F, such as sealing it to the loading port rear plate of the front wall 108F. Any suitable surface clamping mechanism may be used.

[0063] As will be apparent from below, the use of filter purification equipment 103 in conjunction with factory interface environmental control equipment 118 can be used to control the environment within factory interface chamber 108C to meet certain environmental conditions, but also allows for a more rapid resumption of substrate processing by ensuring that moisture contamination of chamber filter 132 is minimized during maintenance of factory interface 108. Therefore, the time required to resume processing of substrate 245 after maintenance of components in factory interface chamber 108C can be significantly reduced, for example, to less than approximately 4 hours, or even less than approximately 1 hour, after the passage door 124 is closed.

[0064] For reference Figure 4A purification control method will be described. Purification control method 400 includes, at 402, providing a plant interface chamber (e.g., plant interface chamber 108C) having a passage door (e.g., passage door 124) configured to provide access to personnel maintenance passage within the plant interface chamber.

[0065] Method 400 includes, at 404, providing a chamber filter (e.g., chamber filter 132) configured to filter the flow of purified gas supplied to the plant interface chamber.

[0066] Method 400 further includes, at 406, supplying flushing gas to the chamber filter when the channel door is open to minimize moisture contamination of the chamber filter by ambient air (e.g., high-humidity plant air). As described above, the flushing gas flow through chamber filter 132 can occur throughout the entire duration of the channel door 124 being open. Furthermore, the flow of purge gas supplied to the plant interface chamber can be stopped before the flushing gas is supplied. In some embodiments, the channel door 124 can be opened once flushing gas (e.g., clean dry air) has been supplied to the gas chamber 235 and a threshold high level of oxygen has been reached in the plant interface chamber 108C. After the channel door 124 is closed, substrate 245 transfer is only resumed after a predetermined low level of relative humidity (%RH, at room temperature) in the plant interface chamber 108C has been reached.

[0067] The foregoing description discloses only exemplary embodiments of this disclosure. Modifications to the apparatus and methods disclosed above that fall within the scope of this disclosure will be readily apparent to those skilled in the art. Therefore, it should be understood that other embodiments may fall within the scope of this disclosure as defined by the claims.

Claims

1. A system for environmental control, the system comprising: Filter purification equipment, the filter purification equipment being constructed to: Supply purified gas to the plant interface chamber to control one or more environmental conditions within the plant interface chamber; as well as Flushing gas is supplied to the plant interface chamber in association with opening a port of the plant interface chamber to a portion of the plant interface chamber located upstream of the chamber filter, in order to minimize moisture contamination of the chamber filter caused by ambient air, wherein the act of opening the port of the plant interface chamber disrupts the controlled environment of the plant interface chamber.

2. The system according to claim 1, further comprising: Memory; as well as A processor, coupled to the memory, wherein the processor is used for: Receive sensor data associated with the plant interface chamber from one or more sensors; Based on the sensor data, the filter purification device is prompted to supply the flushing gas to the portion of the factory interface chamber located upstream of the chamber filter.

3. The system of claim 2, wherein the processor is further configured to: During the transfer of one or more substrates in the factory interface chamber, the purge gas is induced to flow into the factory interface chamber; and Based on the sensor data, the flow of the purified gas into the factory interface chamber is stopped.

4. The system of claim 2, wherein the sensor data indicates the action of opening the port of the factory interface chamber by disrupting the controlled environment of the factory interface chamber.

5. The system of claim 2, wherein the processor is further configured to: After supplying the flushing gas to said portion of the plant interface chamber, second sensor data is received; and The action of allowing the opening of the port of the factory interface chamber in response to determining that the second sensor data meets a threshold.

6. The system according to claim 1, further comprising: Memory; as well as A processor, coupled to the memory, wherein the processor is used for: Receive chamber entry request; Based on the chamber entry request, the flow of the purified gas into the plant interface chamber is stopped; and Based on the chamber entry request, the filter purification device is prompted to supply the flushing gas.

7. The system according to claim 2, wherein the sensor data includes one or more of humidity data, flow data, pressure data, temperature data, oxygen data, inert gas data, or chemical contaminant data.

8. A method for environmental control, the method comprising the following steps: The processor receives sensor data associated with the plant interface chamber from one or more sensors. as well as The processor, based on the sensor data, prompts the filter purification device to: Supplying purified gas to the plant interface chamber to control one or more environmental conditions within the plant interface chamber; and Flushing gas is supplied to the plant interface chamber in association with opening a port of the plant interface chamber to a portion of the plant interface chamber located upstream of the chamber filter, in order to minimize moisture contamination of the chamber filter caused by ambient air, wherein the act of opening the port of the plant interface chamber disrupts the controlled environment of the plant interface chamber.

9. The method of claim 8, further comprising the following steps: The action of opening the port of the plant interface chamber based on the sensor data to disrupt the controlled environment of the plant interface chamber is determined, wherein the step of causing the filter purification device to supply the flushing gas is in response to the determination of the action of opening the port of the plant interface chamber.

10. The method of claim 8, further comprising the following steps: During the transfer of one or more substrates in the factory interface chamber, the purge gas is induced to flow into the factory interface chamber; and Based on the sensor data, the flow of the purified gas into the factory interface chamber is stopped.

11. The method of claim 8, further comprising the following steps: After supplying the flushing gas to the portion of the plant interface chamber, second sensor data is received; as well as The action of allowing the opening of the port of the factory interface chamber in response to determining that the second sensor data meets a threshold.

12. The method of claim 8, wherein the sensor data includes one or more of humidity data, flow data, pressure data, temperature data, oxygen data, inert gas data, or chemical contaminant data.

13. The method of claim 8, further comprising the following steps: Receive chamber entry request; Based on the chamber entry request, the flow of the purifying gas to the plant interface chamber is stopped, wherein the step of causing the filter purification device to supply the flushing gas is further based on the chamber entry request.

14. The method of claim 8, wherein the action of opening the port of the factory interface chamber includes opening the personnel access door of the factory interface chamber.

15. A system for environmental control, the system comprising: Factory interface chamber; A chamber filter, wherein the chamber filter is disposed in the plant interface chamber; as well as Filter purification equipment, the filter purification equipment being constructed to: Supply purified gas to control one or more environmental conditions within the plant interface chamber; as well as A flushing gas is supplied, which is associated with opening a port in the plant interface chamber to a portion of the plant interface chamber located upstream of the chamber filter, in order to minimize contamination of the chamber filter, wherein the act of opening the port in the plant interface chamber disrupts the controlled environment of the plant interface chamber.

16. The system of claim 15, further comprising: Memory; as well as A processor, coupled to the memory, wherein the processor is used for: Receive sensor data associated with the plant interface chamber from one or more sensors; and Based on the sensor data, the filter purification device is prompted to supply the flushing gas to the portion of the factory interface chamber located upstream of the chamber filter.

17. The system of claim 16, wherein the processor is further configured to: During the transfer of one or more substrates in the factory interface chamber, the purge gas is induced to flow into the factory interface chamber; and Based on the sensor data, the flow of the purified gas into the factory interface chamber is stopped.

18. The system of claim 16, wherein the sensor data indicates the action of opening the port of the factory interface chamber by disrupting the controlled environment of the factory interface chamber.

19. The system of claim 16, wherein the processor is further configured to: After supplying the flushing gas to said portion of the plant interface chamber, second sensor data is received; and The action of allowing the opening of the port of the factory interface chamber in response to determining that the second sensor data meets a threshold.

20. The system of claim 15, further comprising: Memory; as well as A processor, coupled to the memory, wherein the processor is used for: Receive chamber entry request; Based on the chamber entry request, the flow of the purified gas into the plant interface chamber is stopped; and Based on the chamber entry request, the filter purification device is prompted to supply the flushing gas.

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