A double-sided perovskite solar cell based on a multi-layer transparent electrode and its preparation method

Abstract

The present invention discloses a double-sided perovskite solar cell based on a multi-layer transparent electrode structure and a preparation method thereof. The perovskite solar cell is composed, from bottom to top, of a transparent conductive layer, an electron transport layer, a perovskite structure photoactive layer, a hole transport layer, a buffer layer, and a transparent top electrode. The transparent top electrode structure comprises a metal ion-doped oxide layer I / organic small molecule modification layer / ultra-thin metal layer / metal ion-doped oxide layer Ⅰ, with a metal ion-doped oxide layer Ⅰ disposed on top of the buffer layer. The multi-layer transparent top electrode obtained by the present invention has excellent conductivity and transmittance, which can significantly improve the photoelectric conversion efficiency of the perovskite solar cell. The high transmittance of the transparent electrode enables the perovskite cell to absorb sunlight on both sides, further improving the photoelectric conversion efficiency. This has positive significance for further improving the efficiency of photovoltaic power generation and the research and development of photovoltaic building integration in the future.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a double-sided perovskite solar cell based on a multi-layer transparent electrode structure and a preparation method thereof. Background Art

[0002] Bifacial perovskite solar cells not only have the advantages of simple processing, low production cost, the ability to prepare flexible and portable devices, and high photoelectric conversion efficiency, but their double-sided light absorption property further improves the photoelectric conversion efficiency, attracting widespread attention from researchers around the world. In addition, several domestic companies have begun to develop and prepare bifacial perovskite solar cells, making it an important development direction in the photovoltaic field. The transparent electrodes of bifacial perovskite solar cells must have both high conductivity and high transmittance, allowing them to absorb light from both sides without affecting cell performance. Currently, the most commonly used transparent thin-film electrodes, such as ITO, FTO, and AZO, have the problem of high resistance when prepared under low temperature conditions, resulting in high series resistance of the solar cell. This problem is particularly prominent when preparing large-area solar cells. Summary of the Invention

[0003] The present invention aims to provide a double-sided perovskite solar cell based on a multilayer transparent electrode structure and a method for preparing the same. This invention significantly improves the photoelectric conversion efficiency of the perovskite solar cell by utilizing the transparent top electrode multilayer structure to provide excellent conductivity and transmittance. The high transmittance of the transparent electrode enables the perovskite cell to absorb sunlight from both sides, further improving the photoelectric conversion efficiency. This has positive implications for future research and development into improving photovoltaic power generation efficiency and building photovoltaic integration.

[0004] The present invention is achieved through the following technical solutions:

[0005] A double-sided perovskite solar cell based on a multi-layer transparent electrode structure is composed of a transparent conductive layer, an electron transport layer, a perovskite structure photoactive layer, a hole transport layer, a buffer layer and a transparent top electrode from bottom to top. The transparent top electrode structure is a metal ion-doped oxide I layer / organic small molecule modification layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer, and a metal ion-doped oxide Ⅰ layer is provided on top of the buffer layer.

[0006] Preferably, the organic small molecule modification layer material is an organic small molecule that produces a coordination effect with metal ions.

[0007] More preferably, the organic small molecule modification layer material is selected from one or two of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 6,6'-dicyano-2,2'-bipyridine and 1,10-phenanthroline-4,7-dicarboxylic acid.

[0008] Preferably, in the metal ion-doped oxide I layer / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer structure, the thickness of the metal ion-doped oxide I layer is 40-60 nm, and the thickness of the metal ion-doped oxide Ⅰ layer is 50-60 nm.

[0009] Preferably, the buffer layer is a metal oxide layer, and the metal oxide is MoO3 or NiO x , the thickness of the buffer layer is 10-30nm.

[0010] The thickness of the electron transport layer is 25-35 nm, the thickness of the organic-inorganic perovskite structure photoactive layer is 640-660 nm, and the thickness of the hole transport layer is 70-90 nm.

[0011] Preferably, in the metal ion-doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer structure, the metal material of the ultra-thin metal layer is selected from one of silver, aluminum, gold and copper, and the metal ion-doped oxide in the metal ion-doped oxide layer I or the metal ion-doped oxide Ⅰ layer is selected from one of indium-doped tin oxide, aluminum-doped zinc oxide and indium-doped zinc oxide.

[0012] The transparent conductive layer is glass or flexible plastic, the material of the transparent conductive layer is fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO), and the material of the perovskite structure photoactive layer can be selected from MAPbI3, FAPbI3, MAPbBr3, FAPbBr3 or (FAPbI3) 0.95 (MAPbBr) 0.05 One of, but not limited to these materials; the material of the hole transport layer is selected from one of polythiophene, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, CuSCN, WO3 and MoO3, but not limited to these materials.

[0013] The thickness of the metal ion-doped oxide layer I / metal ion-doped oxide layer Ⅰ of the multilayer transparent electrode structure (metal ion-doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide layer Ⅰ) is adjustable, and the transmittance of the multilayer transparent electrode changes with the thickness of the metal ion-doped oxide layer. The thickness of the organic small molecule modified layer is 3-5 nm, and the thickness of the ultra-thin metal layer is 8-10 nm.

[0014] The present invention also protects a method for preparing the above-mentioned double-sided perovskite solar cell based on a multi-layer transparent electrode, comprising the following steps:

[0015] (1) performing ultraviolet ozone treatment on the pretreated transparent conductive layer;

[0016] (2) preparing a tin oxide nanofilm on the surface of the transparent conductive layer after the ultraviolet ozone treatment in step (1) to obtain a nano tin oxide electron transport layer;

[0017] (3) preparing a perovskite structure photoactive layer on the nano-tin oxide electron transport layer obtained in step (2);

[0018] (4) preparing a hole transport layer on the perovskite structure photoactive layer obtained in step (3);

[0019] (5) depositing a buffer layer on the hole transport layer obtained in step (4) by thermal evaporation;

[0020] (6) A metal ion-doped oxide layer I is prepared from the buffer layer obtained in step (5) by a magnetron sputtering method, an organic small molecule modification layer is prepared on the metal ion-doped oxide layer I by a spin coating process, and then an ultrathin metal layer and a metal ion-doped oxide layer Ⅰ are respectively prepared on the organic small molecule modification layer by a magnetron sputtering method.

[0021] Preferably, step (6) is prepared by the following steps:

[0022] a. Preparation of metal ion-doped oxide layer I: using a metal ion-doped oxide target, the substrate temperature is room temperature, the sputtering pressure is controlled at 0.2-0.3 Pa, the sputtering power is 40-60 W, and the sputtering time is 10-15 minutes, and the metal ion-doped oxide layer I is prepared on the buffer layer obtained in step (5);

[0023] b. Preparation of an organic small molecule modification layer: a 0.1-0.5 mg / mL organic small molecule solution was spin-coated on the metal ion-doped oxide layer I at a rotation speed of 3000-4000 rpm to prepare an organic small molecule modification layer;

[0024] c. Preparation of ultra-thin metal layer: Using a metal target, the sputtering pressure is controlled at 0.2-0.3 Pa, the sputtering power is 20-30 W, and the sputtering time is 1-2 minutes to prepare an ultra-thin metal layer on the organic small molecule modified layer;

[0025] d. Preparation of metal ion-doped oxide layer Ⅰ: Using metal ion-doped oxide target, substrate temperature is room temperature, sputtering pressure is controlled at 0.2-0.3 Pa, sputtering power is 40-60 W, sputtering time is 10-15 minutes, and metal ion-doped oxide layer Ⅰ is prepared on the ultra-thin metal layer.

[0026] Further preferably, the metal ion-doped oxide target in step a or d is selected from one of indium-doped tin oxide, aluminum-doped zinc oxide and indium-doped zinc oxide, and the metal target in step c is selected from one of silver, aluminum, gold and copper.

[0027] Preferably, step (5) adopts thermal evaporation method with a vacuum degree of 2×10 -4 -4×10 -4 Pa, the evaporation rate is

[0028] The present invention also protects the application of the double-sided perovskite solar cell based on the multi-layer structure transparent electrode in photovoltaic building integration. The double-sided perovskite solar cell is made into a double-sided solar cell panel, which is integrated into the exterior of the building. The front side captures incident sunlight and the back side absorbs indoor light and reflected light, thereby realizing photovoltaic building integration.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] 1. The use of an organic small molecule modification layer can inhibit the isolated island growth of metal at a low thickness threshold, forming an ultra-thin and continuous metal film, and obtaining an ultra-thin metal with excellent conductive properties, so that the metal ion-doped oxide / organic small molecule modification layer / ultra-thin metal layer / metal ion-doped oxide transparent electrode has low surface resistance.

[0031] 2. Using the structure of metal ion-doped oxide / metal / metal ion-doped oxide and the anti-reflection effect of the metal ion-doped oxide layer, the transmittance of the metal ion-doped oxide / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide transparent electrode can be improved, and direct contact between the metal electrode and the battery can be avoided, thereby improving the stability of the perovskite solar cell.

[0032] 3. The multi-layer transparent top electrode obtained by the present invention has excellent conductivity and transmittance, which can greatly improve the photoelectric conversion efficiency of perovskite solar cells. The photoelectric conversion efficiency under single-sided illumination reaches 20.3%. When the bottom is illuminated single-sidedly and the top is given 0.2 and 0.5 units of light intensity, the double-sided equivalent conversion efficiency of the double-sided perovskite solar cell reaches 23.3% and 26.5% respectively, which is the highest among the single-section double-sided perovskite solar cells reported so far. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 Schematic diagram of the structure of the double-sided perovskite solar cell of the present invention;

[0034] Figure 2 This is a scanning electron microscope image of a continuous ultrathin metal formed after using an organic small molecule modification layer in Example 1;

[0035] Figure 3 This is a scanning electron microscope image of a discontinuous ultrathin metal without an organic small molecule modification layer for Comparative Example 3;

[0036] Figure 4 The solar cells prepared in Example 1 and Comparative Examples 1 and 2 of the present invention were subjected to a solar simulator (standard light source) with a light intensity of 100 mW / cm 2 The JV curve below, where J is the photocurrent density and V is the photovoltage;

[0037] Figure 5 The solar cell prepared in Example 1 of the present invention has a front light intensity of 100 mW / cm 2 Under irradiation, the back side of the cell is illuminated with an intensity of 20mW / cm 2 and 50mW / cm 2 JV curve under light intensity of , where J is the photocurrent density and V is the photovoltage;

[0038] Explanation of the accompanying symbols: 1. Transparent conductive layer; 2. Nano-tin oxide electron transport layer; 3. Perovskite structure photoactive layer; 4. Hole transport layer; 5. Buffer layer; 6. Transparent top electrode; 6-1. Metal ion-doped oxide layer I; 6-2. Organic small molecule modification layer / ultra-thin metal layer; 6-3. Metal ion-doped oxide layer Ⅰ. DETAILED DESCRIPTION

[0039] The present invention will be described in further detail below with reference to the examples. These examples are intended to illustrate the present invention only and are not intended to limit the scope of the present invention. Experimental methods in the following examples, where specific conditions are not specified, generally follow conventional conditions in the art or conditions recommended by the manufacturer; raw materials and reagents used, unless otherwise specified, are considered to be commercially available through conventional markets.

[0040] like Figure 1 As shown, a double-sided perovskite solar cell based on a multi-layer transparent electrode is composed of a transparent conductive layer 1, an electron transport layer, a perovskite structure photoactive layer 3, a hole transport layer 4, a buffer layer 5 and a transparent top electrode 6 from bottom to top. The structure of the transparent top electrode 6 is specifically metal ion-doped oxide layer I / organic small molecule modification layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer. A metal ion-doped oxide Ⅰ layer 6-1 is arranged on the top of the buffer layer 5. An organic small molecule modification layer / ultra-thin metal layer 6-2 and a metal ion-doped oxide Ⅰ layer 6-3 are arranged on the top of the metal ion-doped oxide Ⅰ layer 6-1.

[0041] In the following embodiments, the electron transport layer is preferably a nano-tin oxide electron transport layer 2 .

[0042] In the following embodiments, the transparent conductive layer 1 is preferably made of glass or flexible plastic, the material of the transparent conductive layer 1 is fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO), and the material of the perovskite structure photoactive layer 3 is selected from MAPbI3, FAPbI3, MAPbBr3, FAPbBr3 or (FAPbI3) 0.95 (MAPbBr) 0.05 One of the materials of the hole transport layer 4 is selected from one of polythiophene, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, CuSCN, WO3 and MoO3.

[0043] In the following embodiments, preferably, the thickness of the nano-tin oxide electron transport layer 2 is 25-35 nm, the thickness of the perovskite structure photoactive layer 3 is 640-660 nm, and the thickness of the hole transport layer 4 is 70-90 nm. The thickness of the buffer layer 5 is 10-30 nm, and in the transparent top electrode 6 having a metal ion-doped oxide I layer / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer structure, the thickness of the metal ion-doped oxide Ⅰ layer 6-1 is 40-60 nm, the thickness of the metal ion-doped oxide Ⅰ layer 6-3 is 50-60 nm, the thickness of the organic small molecule modified layer is 3-5 nm, and the thickness of the ultra-thin metal layer is 8-10 nm.

[0044] Example 1

[0045] A method for preparing a double-sided perovskite solar cell based on a multi-layer transparent electrode comprises the following steps:

[0046] (1) Ultrasonic cleaning of FTO glass was performed for 20 minutes with deionized water, anhydrous ethanol, and isopropanol, respectively, and then dried with high-purity nitrogen;

[0047] (2) The cleaned FTO glass sheet is treated with UV ozone to improve the wettability of the FTO surface and increase the work function of the transparent conductive film;

[0048] (3) Spin-coating a layer of tin oxide nanocrystalline film on the FTO surface as an electron transport layer. The thickness of the electron transport layer is 30 nm. The concentration of the nano-tin oxide solution is 15%. The spin-coating speed is 3000 rpm and heat treatment is performed at 150°C for 30 minutes.

[0049] (4) Spin-coat a layer of (FAPbI3) on the tin oxide nanocrystalline film 0.95 (MAPbBr) 0.05The perovskite active layer, with a thickness of 650 nm, was prepared by dissolving a 1.4 M mixture of metallic lead salts and organic cations in a solvent combination of DMF:DMSO (4:1 by volume) (with additional additions of 0.5 M MACl and 0.13 M PbI2). The precursor solution was stirred continuously for one hour at 3000 rpm before use.

[0050] (5) Dynamically spin-coating ethyl acetate antisolvent on the perovskite film at a rotation speed of 4000 rpm and heat-treating at 100 °C for 60 min;

[0051] (6) Spin coating a layer of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene as a hole transport layer material on the perovskite film with a thickness of 80 nm and a spin coating speed of 4000 rpm, wherein the hole transport layer material solution is 72.3 mg of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 28.8 μL of tert-butylpyridine, and 17.5 μL of acetonitrile solution containing 520 mg / mL lithium bis(trifluoromethanesulfonylimide) in 1 mL of chlorobenzene;

[0052] (7) Deposit a layer of MoO3 on the hole transport layer with a thickness of 20 nm;

[0053] (8) Then, an ITO metal ion-doped oxide layer was sputtered on the MoO3 by magnetron sputtering, with a vacuum degree of 0.3 Pa, 70 sccm of Ar gas, and a sputtering power of 60 W. By controlling the deposition time, the thickness of the ITO metal ion-doped oxide layer I was 40 nm.

[0054] (9) Spin-coat an organic small molecule layer on ITO with a thickness of 4 nm using a 0.5 mg / mL BCP solution in isopropanol at a speed of 3500 rpm;

[0055] (10) A continuous ultrathin silver layer with a thickness of 9 nm was deposited on the organic small molecule layer by magnetron sputtering with a vacuum of 0.3 Pa, 60 sccm of Ar gas, and a sputtering power of 20 W;

[0056] (11) The top ITO was deposited on the ultra-thin silver layer by magnetron sputtering with a vacuum degree of 0.3 Pa, 70 sccm of Ar gas, and a sputtering power of 60 W, so that the thickness of the ITO metal ion-doped oxide ⅠⅠ layer was 55 nm, thereby obtaining a double-sided perovskite solar cell.

[0057] The double-sided perovskite solar cell based on the multilayer transparent electrode prepared by the above method achieved an optimal power conversion efficiency of 20.3% under the condition of single-sided illumination at the bottom. When the single-sided illumination at the bottom was applied while the top was 0.2 units of illumination intensity, the double-sided equivalent conversion efficiency of the double-sided perovskite solar cell reached 23.3%. When the single-sided illumination at the bottom was applied while the top was 0.5 units of illumination intensity, the double-sided equivalent conversion efficiency of the double-sided perovskite solar cell reached 26.5%. The JV curves of the double-sided perovskite solar cell under different albedo are shown in Figure 2. Figure 5 shown.

[0058] Comparative Example 1

[0059] Same as Example 1, except that:

[0060] A pure ITO transparent electrode with a thickness of 300 nm was prepared on the buffer layer by magnetron sputtering. The efficiency of the perovskite solar cell based on this top electrode is 16.7%. The JV curve of the perovskite solar cell with ITO electrode is shown in Figure 2. Figure 4 As shown. The device's J SC 22.41 mA cm -2 , V OC It is 1.09V, FF is 69.1%, and PCE is 16.8%.

[0061] Comparative Example 2

[0062] Same as Example 1, except that:

[0063] The Au electrode was directly deposited on the hole transport layer with a thickness of 70 nm. The efficiency of the perovskite solar cell based on this top electrode was 20.4%. The JV curve of the perovskite solar cell with Au electrode is shown in Figure 2. Figure 4 As shown. The device's J SC 24.72 mA cm -2 , V OC It is 1.109V, FF is 75.6%, and PCE is 20.7%.

[0064] Comparative Example 3

[0065] Same as Example 1, except that:

[0066] Without using BCP organic small molecule layer, ITO / Ag / ITO electrode was prepared on the buffer layer by magnetron sputtering. Figure 3 As shown, compared with the ITO / BCP-Ag / ITO electrode in Example 1, the Ag layer in the electrode without using BCP organic small molecules is discontinuous, the surface resistance is larger, and the transmittance is lower.

[0067] Example 2

[0068] Same as Example 1, except that:

[0069] The material of the buffer layer is NiO x The perovskite solar cell prepared by this method has an efficiency of 16.2%.

[0070] Example 3

[0071] Same as Example 1, except that:

[0072] The buffer layer has a thickness of 10 nm. The perovskite solar cell prepared by this method has an efficiency of 15.3%.

[0073] Example 4

[0074] Same as Example 1, except that:

[0075] The buffer layer has a thickness of 30 nm. The perovskite solar cell prepared by this method has an efficiency of 19.5%.

[0076] Example 5

[0077] Same as Example 1, except that:

[0078] The organic small molecule modified layer material is DCP. The efficiency of the perovskite solar cell prepared by this method is 18.2%.

[0079] Example 6

[0080] Same as Example 1, except that:

[0081] The organic small molecule modified layer material is PDC. The perovskite solar cell prepared by this method has an efficiency of 18.6%.

[0082] Example 7

[0083] Same as Example 1, except that:

[0084] The thickness of the metal ion-doped oxide I layer is 40 nm, and the thickness of the metal ion-doped oxide II layer is 50 nm. The perovskite solar cell prepared by this method has an efficiency of 19.1%.

[0085] Example 8

[0086] Same as Example 1, except that:

[0087] The thickness of the metal ion-doped oxide I layer is 40 nm, and the thickness of the metal ion-doped oxide II layer is 60 nm. The perovskite solar cell prepared by this method has an efficiency of 19%.

[0088] Example 9

[0089] Same as Example 1, except that:

[0090] The sputtering power of the metal ion-doped oxide layer I / metal ion-doped oxide layer II was 50 W. The efficiency of the perovskite solar cell prepared by this method was 18.5%.

[0091] Example 10

[0092] Same as Example 1, except that:

[0093] The sputtering power of the metal ion-doped oxide layer I / metal ion-doped oxide layer II was 40 W. The efficiency of the perovskite solar cell prepared by this method was 18.3%.

[0094] Example 11

[0095] Same as Example 1, except that:

[0096] The perovskite active layer is MAPbI3. The perovskite solar cell prepared by this method has an efficiency of 17.6%.

[0097] Example 12

[0098] Same as Example 1, except that:

[0099] The perovskite active layer is FAPbI3. The perovskite solar cell prepared by this method has an efficiency of 18.2%.

[0100] Example 13

[0101] Same as Example 1, except that:

[0102] The material of the metal ion doped oxide layer I / metal ion doped oxide layer Ⅱ is AZO. The efficiency of the perovskite solar cell prepared by this method is 18.6%.

[0103] Example 14

[0104] Same as Example 1, except that:

[0105] The material of the metal ion doped oxide layer I / metal ion doped oxide layer Ⅰ is IZO. The efficiency of the perovskite solar cell prepared by this method is 18.1%.

[0106] Example 15

[0107] Same as Example 1, except that:

[0108] The concentration of the organic small molecule modification layer solution was 0.3 mg / mL. The efficiency of the perovskite solar cell prepared by this method was 19.3%.

[0109] Example 16

[0110] Same as Example 1, except that:

[0111] The concentration of the organic small molecule modification layer solution was 0.1 mg / mL. The efficiency of the perovskite solar cell prepared by this method was 19.1%.

[0112] Example 17

[0113] Same as Example 1, except that:

[0114] The ultra-thin metal layer is made of Au. The perovskite solar cell prepared by this method has an efficiency of 19.5%.

[0115] Example 18

[0116] Same as Example 1, except that:

[0117] The ultra-thin metal layer is made of Cu. The perovskite solar cell prepared by this method has an efficiency of 18.9%.

[0118] Example 19

[0119] Same as Example 1, except that:

[0120] The thickness of the nano-tin oxide electron transport layer is 25nm, the thickness of the perovskite structure photoactive layer is 640nm, and the thickness of the hole transport layer is 70nm. The buffer layer material is MoO3, the thickness of the buffer layer is 10nm, and the thermal evaporation method is used with a vacuum degree of 2×10 -4 Pa, the evaporation rate is

[0121] The metal ion doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion doped oxide layer Ⅰ is prepared by the following steps:

[0122] a. Preparation of metal ion-doped oxide layer I: using a metal ion-doped oxide target, the substrate temperature is room temperature, the sputtering pressure is controlled at 0.2 Pa, the sputtering power is 40 W, and the sputtering time is 15 minutes. The metal ion-doped oxide layer I is prepared on the buffer layer. The metal ion-doped oxide target is aluminum-doped zinc oxide. The thickness of the metal ion-doped oxide layer I is 40 nm.

[0123] b. Preparation of an organic small molecule modification layer: A BCP solution with a concentration of 0.3 mg / mL was spin-coated on the metal ion-doped oxide layer I to prepare an organic small molecule modification layer at a rotation speed of 3000 rpm. The thickness of the organic small molecule modification layer was 3 nm.

[0124] c. Preparation of ultra-thin metal layer: Using a metal target, the sputtering pressure is controlled at 0.3 Pa, the sputtering power is 30 W, and the sputtering time is 1 minute. An ultra-thin metal layer is prepared on the organic small molecule modified layer. The metal target is silver, and the thickness of the ultra-thin metal layer is 8 nm.

[0125] d. Preparation of metal ion-doped oxide ⅠⅠ layer: Using metal ion-doped oxide target material, the substrate temperature is room temperature, the sputtering gas pressure is controlled at 0.2 Pa, the sputtering power is 40 W, and the sputtering time is 15 minutes, a metal ion-doped oxide ⅠⅠ layer is prepared on the ultra-thin metal layer. The metal ion-doped oxide target material is aluminum-doped zinc oxide, and the thickness of the metal ion-doped oxide ⅠⅠ layer is 50 nm.

[0126] Example 20

[0127] Same as Example 1, except that:

[0128] The thickness of the nano-tin oxide electron transport layer is 35nm, the thickness of the perovskite structure photoactive layer is 660nm, and the thickness of the hole transport layer is 90nm. The buffer layer material is NiO x The buffer layer has a thickness of 30 nm and is deposited by thermal evaporation with a vacuum degree of 4×10 -4 Pa, the evaporation rate is

[0129] The metal ion doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion doped oxide layer Ⅰ is prepared by the following steps:

[0130] a. Preparation of metal ion-doped oxide layer I: using a metal ion-doped oxide target, the substrate temperature is room temperature, the sputtering pressure is controlled at 0.3 Pa, the sputtering power is 60 W, and the sputtering time is 10 minutes. The metal ion-doped oxide layer I is prepared on the buffer layer. The metal ion-doped oxide target is indium-doped tin oxide. The thickness of the metal ion-doped oxide layer I is 60 nm.

[0131] b. Preparation of an organic small molecule modification layer: A BCP solution with a concentration of 0.1 mg / mL was spin-coated on the metal ion-doped oxide layer I at a rotation speed of 4000 rpm to a thickness of 5 nm.

[0132] c. Preparation of ultra-thin metal layer: Using a metal target, the sputtering pressure is controlled at 0.2 Pa, the sputtering power is 20 W, and the sputtering time is 2 minutes. An ultra-thin metal layer is prepared on the organic small molecule modified layer. The metal target is aluminum, and the thickness of the ultra-thin metal layer is 10 nm.

[0133] d. Preparation of metal ion-doped oxide ⅠⅠ layer: Using metal ion-doped oxide target material, the substrate temperature is room temperature, the sputtering gas pressure is controlled at 0.3 Pa, the sputtering power is 60 W, and the sputtering time is 10 minutes, a metal ion-doped oxide ⅠⅠ layer is prepared on the ultra-thin metal layer. The metal ion-doped oxide target material is indium-doped tin oxide, and the thickness of the metal ion-doped oxide ⅠⅠ layer is 60 nm.

[0134] The description of the above embodiments is only used to help understand the technical solution and core ideas of the present invention. It should be pointed out that for those skilled in the art, several improvements and modifications can be made to the present invention without departing from the principles of the present invention. These improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A double-sided perovskite solar cell based on a multi-layer transparent electrode, characterized in that: From bottom to top, it is composed of a transparent conductive layer, an electron transport layer, a perovskite structure photoactive layer, a hole transport layer, a buffer layer and a transparent top electrode. The transparent top electrode structure is a metal ion-doped oxide layer I / organic small molecule modification layer / ultra-thin metal layer / metal ion-doped oxide layer Ⅰ. A metal ion-doped oxide layer I is provided on top of the buffer layer, and the ultra-thin metal layer has a thickness of 8-10 nm. The organic small molecule modification layer material is an organic small molecule that produces a coordination effect with metal ions, and the organic small molecule modification layer material is selected from one or two of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 6,6'-dicyano-2,2'-bipyridine and 1,10-phenanthroline-4,7-dicarboxylic acid.

2. The perovskite solar cell according to claim 1, characterized in that In the structure of metal ion-doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide layer II, the thickness of the metal ion-doped oxide layer I is 40-60 nm, and the thickness of the metal ion-doped oxide layer II is 50-60 nm.

3. The perovskite solar cell according to claim 1, wherein The buffer layer is a metal oxide layer, and the metal oxide is MoO3 or NiO x , the thickness of the buffer layer is 10-30 nm.

4. The perovskite solar cell according to claim 1, wherein In the metal ion-doped oxide layer I / organic small molecule modified layer / ultra-thin metal layer / metal ion-doped oxide Ⅰ layer structure, the metal material of the ultra-thin metal layer is selected from one of silver, aluminum, gold and copper, and the metal ion-doped oxide in the metal ion-doped oxide layer I or the metal ion-doped oxide Ⅰ layer is selected from one of indium-doped tin oxide, aluminum-doped zinc oxide and indium-doped zinc oxide.

5. The method for preparing a double-sided perovskite solar cell based on a multi-layer transparent electrode according to claim 1, characterized in that: The steps include: (1) performing ultraviolet ozone treatment on the pretreated transparent conductive layer; (2) preparing a tin oxide nanofilm on the surface of the transparent conductive layer after the ultraviolet ozone treatment in step (1) to obtain a nano tin oxide electron transport layer; (3) preparing a perovskite structured photoactive layer on the nano-tin oxide electron transport layer obtained in step (2); (4) preparing a hole transport layer on the perovskite structure photoactive layer obtained in step (3); (5) depositing a buffer layer on the hole transport layer obtained in step (4) by thermal evaporation; (6) A metal ion-doped oxide layer I is prepared on the buffer layer obtained in step (5) by magnetron sputtering, an organic small molecule modification layer is prepared on the metal ion-doped oxide layer I by spin coating, and an ultrathin metal layer and a metal ion-doped oxide layer Ⅰ are respectively prepared on the organic small molecule modification layer by magnetron sputtering, thereby obtaining the double-sided perovskite solar cell.

6. The preparation method according to claim 5, characterized in that Step (6) is specifically prepared by the following steps: a. Preparation of metal ion-doped oxide layer I: using metal ion-doped oxide target, substrate temperature is room temperature, sputtering pressure is controlled at 0.2-0.3 Pa, sputtering power is 40-60 W, sputtering time is 10-15 minutes, and metal ion-doped oxide layer I is prepared on the buffer layer obtained in step (5); b. Preparation of an organic small molecule modification layer: a 0.1-0.5 mg / mL organic small molecule solution is spin-coated on the metal ion-doped oxide layer I at a rotation speed of 3000-4000 rpm. c. Preparation of ultra-thin metal layer: Using a metal target, the sputtering pressure is controlled at 0.2-0.3 Pa, the sputtering power is 20-30 W, and the sputtering time is 1-2 minutes to prepare an ultra-thin metal layer on the organic small molecule modified layer; d. Preparation of metal ion-doped oxide layer Ⅰ: Using a metal ion-doped oxide target, the substrate temperature is room temperature, the sputtering pressure is controlled at 0.2-0.3 Pa, the sputtering power is 40-60 W, and the sputtering time is 10-15 minutes to prepare a metal ion-doped oxide layer Ⅰ on the ultra-thin metal layer.

7. The preparation method according to claim 6, characterized in that In step a or d, the metal ion-doped oxide target is selected from one of indium-doped tin oxide, aluminum-doped zinc oxide and indium-doped zinc oxide. In step c, the metal target is selected from one of silver, aluminum, gold and copper.

8. Application of the double-sided perovskite solar cell based on a multi-layer transparent electrode structure in photovoltaic building integration according to claim 1, characterized in that: The double-sided perovskite solar cell is made into a double-sided solar panel, which is integrated into the exterior of a building, with the front side capturing incident sunlight and the back side absorbing indoor light and reflected light.

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