A vapor deposition apparatus and substrate processing method

Abstract

The present application provides a kind of gas deposition device and substrate processing method.The gas deposition device includes: reaction cavity, for carrying out gas deposition process;Substrate support assembly for carrying substrate, it is arranged below the reaction cavity;Gas shower head is oppositely arranged with the substrate support assembly, it is located above the reaction cavity, the substrate support assembly and the gas shower head between form a gas-filled space, the gas-filled space can be switched in high pressure state and low pressure state;The upper surface of the substrate support assembly has the center area of carrying substrate and the edge area around the center area, the edge area and the lower surface of the gas shower head opposite between during the gas deposition process, there is variable interval value, the interval value in the high pressure state is less than the interval value in the low pressure state.The present application can guarantee step coverage and improve processing efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a vapor deposition apparatus and a substrate processing method. Background Technology

[0002] With the rapid advancement of integrated circuit technology, the requirements for thin film filling with high aspect ratio structures are becoming increasingly stringent, placing higher demands on equipment. Therefore, high-efficiency and low-cost atomic layer deposition or atomic layer-like deposition processes are becoming particularly important.

[0003] Atomic layer deposition (ALD) is an atomic-scale thin film fabrication technique. It can deposit uniform, controllable thickness, and tunable compositional ultrathin films. With the development of nanotechnology and semiconductor microelectronics, the size requirements for devices and materials are becoming increasingly stringent, while the aspect ratios in device structures are constantly increasing. This necessitates reducing the thickness of materials used to the order of tens to several nanometers. ALD technology has significant application prospects in many fields, including semiconductor devices, optical devices, biomaterials, and micro / nanostructure electromechanical systems. Its advantages determine that ALD technology has enormous development potential and a broader range of applications.

[0004] The ideal ALD thin film growth process involves selectively and alternately exposing different process gases to the substrate surface, where a chemical adsorption reaction occurs to form the deposited thin film. During atomic deposition, the chemical reaction of the new atomic layer is directly related to the previous layer, ensuring that only one atomic layer is deposited per reaction. In ALD thin film growth, process gases are pulsed into the reaction chamber, followed by purge gas to maintain a clean environment. This process is repeated for each subsequent deposition layer. Compared to traditional chemical vapor deposition (CVD), ALD technology requires strict adherence to alternating pulsed process gases to avoid gas-phase reactions. The ALD reaction flow is roughly as follows: Figure 1 As shown, a complete ALD growth cycle can be divided into four steps, taking two process gases A and B as an example: 1. A operates, that is, the first process gas A is injected into the reaction chamber; 2. A is purged, that is, purge gas is introduced to remove excess first process gas A; 3. B operates, that is, the second process gas is injected into the reaction chamber; 4. B is purged, that is, excess second process gas B is introduced to remove. During steps 1 and 2, B is in a charged state to ensure that it can enter the reaction chamber immediately once A is cleaned; during steps 3 and 4, A is in a charged state to ensure that it can enter the reaction chamber immediately once B is cleaned.

[0005] A and B are two process gases. The operation and purging of each gas are crucial to the effectiveness of the ALD reaction and determine the film coverage effect on the high aspect ratio structure of the substrate surface, i.e., the step coverage rate. To improve the production efficiency of ALD, how to ensure the effectiveness of the reaction at each step while reducing the step time has become an urgent problem to be solved. Summary of the Invention

[0006] The purpose of this invention is to provide a vapor deposition apparatus and a substrate processing method that can ensure step coverage and improve processing efficiency.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0008] A vapor deposition apparatus, comprising:

[0009] The reaction chamber is used to perform vapor deposition processes;

[0010] A base assembly for supporting the substrate is disposed below the reaction chamber;

[0011] A gas spray head is disposed opposite to the base assembly and is located above the reaction chamber. An inflation space is formed between the base assembly and the gas spray head. The inflation space can switch between a high-pressure state and a low-pressure state.

[0012] The upper surface of the base assembly has a central region supporting the substrate and an edge region surrounding the central region. During the vapor deposition process, the edge region and the lower surface of the opposite gas spray head have a variable spacing value, which is smaller in the high-pressure state than in the low-pressure state.

[0013] Optionally, the reaction of the vapor deposition process includes a first process gas and a second process gas; the vapor deposition apparatus further includes a controller configured to: when the first process gas or the second process gas is introduced, to keep the filling space under high pressure, and when the first process gas or the second process gas is stopped, to keep the filling space under low pressure, and to introduce purge gas into the filling space under low pressure.

[0014] Optionally, the base assembly may be in a transfer state, where the spacing value is greater than the spacing value in the low-pressure state.

[0015] Optionally, under high pressure, the base assembly rises or the gas spray head falls; under low pressure, the base assembly falls or the gas spray head rises.

[0016] Optionally, the base assembly includes an edge ring assembly located in the edge region, the upper surface of the edge ring assembly being higher than the upper surface of the central region.

[0017] Optionally, the edge ring assembly includes a first cover ring and a second cover ring disposed on the upper surface of the first cover ring.

[0018] Optionally, the inner diameter of the first covering ring is smaller than the outer diameter of the substrate, a transfer port is provided on the side wall of the reaction chamber, and when the base assembly descends to the position of the transfer port, the central region of the base assembly is lower than the horizontal plane where the transfer port is located, and the lower surface of the first covering ring is higher than the horizontal plane where the transfer port is located.

[0019] Optionally, under the high pressure condition, the distance between the second cover ring and the lower surface of the gas spray head is 2 mm.

[0020] Optionally, the radial width of the second cover ring is greater than or equal to 30 mm.

[0021] Optionally, under the low-pressure condition, the distance between the second cover ring and the lower surface of the gas spray head is between 5 mm and 8 mm.

[0022] Optionally, the sidewall of the reaction chamber is provided with an air extraction structure, the air extraction structure including an annular air extraction chamber, the air inlet of the air extraction chamber being connected to the inflation space, and the air outlet of the air extraction chamber being connected to an external air extraction device.

[0023] Optionally, the air inlets are evenly distributed circumferentially along the sidewall of the reaction chamber.

[0024] Optionally, the number of air inlets is greater than 60.

[0025] Optionally, the diameter of the air inlet is greater than 4 mm.

[0026] A substrate processing method using a vapor deposition apparatus as described in any of the above claims, the method comprising the following steps:

[0027] The inflation space is switched to a high-pressure state, and the first process gas is introduced into the inflation space for a predetermined time.

[0028] Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time;

[0029] The inflation space is switched to a high-pressure state, and a second process gas is introduced into the inflation space for a predetermined time.

[0030] Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time;

[0031] Repeat the above steps until the film deposited on the substrate surface meets the requirements.

[0032] Optionally, the substrate processing method further includes:

[0033] The base assembly is controlled to switch to the wafer transfer state, transferring the substrate to be processed into the reaction chamber, or transferring the processed substrate out of the reaction chamber.

[0034] Compared with the prior art, the above-mentioned technical solution of the present invention has at least one of the following advantages:

[0035] When the gas-filled space is under high pressure, the distance between the edge region of the base assembly and the lower surface of the gas spray head is small, resulting in a smaller outlet for exhaust gas from the gas-filled space. Compared with the prior art, when the same flow rate of process gas is injected, the partial pressure of the process gas in the gas-filled space can be rapidly and significantly increased, allowing the process gas to form a high concentration gradient in a short time. This facilitates the rapid diffusion of the process gas into the microstructure of the substrate surface, forming a uniform surface adsorption layer within the microstructure. When the gas-filled space switches to a low-pressure state, the distance between the edge region of the base assembly and the lower surface of the gas spray head is larger, thus increasing the size of the outlet for exhaust gas from the gas-filled space. Compared with the prior art, this allows the gas in the gas-filled space to quickly flow out through the space between the edge region of the base assembly and the lower surface of the gas spray head, achieving rapid gas discharge and switching to meet the environmental conditions required for the next step. Therefore, the vapor deposition apparatus of the present invention can improve the substrate step coverage and processing efficiency. Attached Figure Description

[0036] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0037] Figure 1 This is a schematic diagram of the ALD process reaction flow.

[0038] Figure 2 This is a structural diagram of a vapor deposition apparatus according to an embodiment of the present invention, wherein the gas filling space is under high pressure.

[0039] Figure 3This is a structural diagram of a vapor deposition apparatus according to an embodiment of the present invention, wherein the gas filling space is in a low-pressure state;

[0040] Figure 4 This is a structural diagram of a vapor deposition apparatus according to an embodiment of the present invention, wherein the base assembly is in a wafer transfer state;

[0041] Figure 5 This is a structural diagram of another vapor deposition apparatus provided in an embodiment of the present invention, wherein the gas filling space is under high pressure.

[0042] Figure 6 This is a structural diagram of another vapor deposition apparatus provided in an embodiment of the present invention, wherein the gas filling space is in a low-pressure state;

[0043] Figure 7 This is a flowchart of a substrate processing method provided in an embodiment of the present invention. Detailed Implementation

[0044] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0045] As described in the background art, in order to ensure the effectiveness of the deposition reaction at each step and reduce the step time, it is necessary to increase the partial pressure of the filling space during the injection of process gas to improve the step coverage, and to decrease the partial pressure during the injection of purge gas to allow the gas to be discharged quickly and reduce the step time. Figure 2 , Figure 3As shown, the present invention provides a vapor deposition apparatus, including a reaction chamber 100 for performing a vapor deposition process. A base assembly 130 for supporting a substrate is disposed below the reaction chamber 100. The upper surface of the base assembly 130 has a central region for supporting the substrate and an edge region surrounding the central region. In some embodiments, the area of ​​the central region may be larger or smaller than the lower surface area of ​​the substrate. A gas spray head 120 is disposed above the reaction chamber 100, opposite to the base assembly 130, forming an inflation space C between them. The gas spray head 120 delivers process gas to the inflation space C to process the substrate. The inflation space C can switch between high-pressure and low-pressure states. Specifically, during the vapor deposition process, the edge region and the lower surface of the opposite gas spray head 120 have a variable spacing value, with the spacing value in the high-pressure state being smaller than that in the low-pressure state. Figure 2 With the inflation space C under high pressure, the distance between the edge region of the base assembly 130 and the lower surface of the gas spray head 120 is d1. Figure 3 When the inflation space C is in a low-pressure state, the distance between the edge region and the lower surface of the gas spray head 120 is d2, where d1 < d2.

[0046] Depend on Figure 2 and Figure 3 It can be seen that when the inflation space C is under high pressure, the distance between the edge region of the base assembly 130 and the lower surface of the gas spray head 120 is small, resulting in a smaller outlet for exhaust gas from the inflation space C. Compared with the prior art, when the same flow rate of process gas is injected, the partial pressure of the process gas in the inflation space C can be rapidly and significantly increased, allowing the process gas to form a high concentration gradient in a short time. This helps the process gas to quickly diffuse into the microstructure of the substrate surface, forming a uniform surface adsorption layer in the microstructure. When the inflation space C switches to a low pressure state, the distance between the edge region of the base assembly 130 and the lower surface of the gas spray head 120 is larger, which increases the size of the outlet for exhaust gas from the inflation space C. Compared with the prior art, this allows the gas in the inflation space C to quickly flow out of the inflation space C through the space between the edge region of the base assembly 130 and the lower surface of the gas spray head 120, achieving rapid gas discharge and switching, and meeting the environmental conditions required for the next step. Therefore, the vapor deposition apparatus of the present invention can improve the step coverage of the substrate and the processing efficiency.

[0047] The gas spray head 120 is connected to an external gas source to uniformly inject process gas or purge gas into the reaction chamber 100, performing thin film deposition or purging in the processing area above the substrate to ensure the normal operation of the thin film deposition process. The gas source includes a first process gas source 111, a second process gas source 112 (e.g., providing raw material gas TiCl4, reactive gas NH3, etc.), and a purge gas source 113 (e.g., providing purge gas N2, etc.). The first process gas source 111, the second process gas source 112, and the purge gas source 113 are connected to the gas spray head 120 through their respective gas supply lines to respectively deliver the first process gas, the second process gas, and the purge gas.

[0048] In this embodiment, the vapor deposition apparatus is an atomic layer deposition (ALD) apparatus, in which process gas and purge gas are alternately circulated and supplied to the interior of the reaction chamber 100. It is understood that the vapor deposition apparatus of the present invention is not limited to the aforementioned atomic layer deposition apparatus; it can also be a vapor deposition apparatus implementing other process types, and the present invention does not impose any limitations on this.

[0049] The vapor deposition process performed by the vapor deposition apparatus includes a first process gas and a second process gas. The apparatus also includes a controller for switching the filling space C when process gas or purge gas is introduced. Specifically, the controller is configured to: maintain the filling space C at high pressure when the first or second process gas is introduced; and maintain the filling space C at low pressure when the first or second process gas is stopped, while introducing purge gas into the low-pressure filling space C. Thus, when the first or second process gas needs to be introduced, the distance between the edge region of the base assembly 130 and the lower surface of the gas spray head 120 is reduced, maintaining the filling space C at high pressure. This allows the introduced process gas to quickly generate a high partial pressure in the filling space C, thereby forming a high concentration gradient within a short time. This allows the process gas to rapidly diffuse into the microstructure of the substrate surface, forming a uniform surface adsorption layer and improving the step coverage of the thin film deposition. When purge gas is required, the distance between the edge area of ​​the base assembly 130 and the lower surface of the gas spray head 120 is increased, so that the inflation space C is in a low-pressure state. The purge gas can quickly carry out the residual gas from the previous step in the inflation space C, and quickly achieve the clean environment required for the next step. The entire process can be completed faster by adjusting the controller's instructions.

[0050] The base assembly 130 can switch between at least two positions, up and down, to meet the needs of process switching and substrate transfer. The base 131 can be connected to a first lifting drive mechanism 1311, which drives the base assembly 130 to move up and down. In some embodiments, the first lifting drive mechanism 1311 can be a power source such as a motor driver. The base assembly 130 is lowered to the wafer transfer position, such as... Figure 4 As shown, the transfer position corresponds to the position of the transfer port 1031 provided on the side wall of the reaction chamber 100. A vacuum manipulator moves the substrate to be processed from the transfer port 1031 into the reaction chamber 100 and places it on the upper surface of the base assembly 130. In some embodiments, the substrate is placed on a pin higher than the upper surface of the base assembly 130, and then the pin descends to place the substrate on the upper surface of the base assembly 130. The base assembly 130 is then raised to a position higher than the transfer port 1031 for thin film deposition. After the reaction is complete, the base assembly 130 is lowered back to the transfer position, and the processed substrate is removed from the reaction chamber 100 from the transfer port 1031 by the vacuum manipulator.

[0051] When the base assembly 130 is in the wafer transfer position, it is in a wafer transfer state. At this time, the distance between the edge region of the base assembly 130 and the lower surface of the gas spray head 120 is greater than the distance d2 between the edge region and the lower surface of the gas spray head 120 in the low-pressure state. Therefore, when purge gas needs to be introduced, it is not necessary to adjust the base assembly 130 to the wafer transfer state; instead, the inflation space C can be adjusted to a low-pressure state between the high-pressure state and the wafer transfer state, thereby improving the substrate processing efficiency of the reaction chamber 100.

[0052] In this embodiment, the switching method of the inflation space C is as follows: controlling the base assembly 130 to rise or the gas spray head 120 to fall, so that the inflation space C is switched to a high-pressure state; controlling the base assembly 130 to fall or the gas spray head 120 to rise, so that the inflation space C is switched to a low-pressure state.

[0053] like Figure 2 , Figure 3 As shown, the first lifting drive mechanism 1311 drives the base assembly 130 to rise until the distance between the edge area of ​​the base assembly 130 and the lower surface of the gas spray head 120 is d1, so that the inflation space C switches to a high-pressure state, and drives the base assembly 130 to fall until the distance between the edge area of ​​the base assembly 130 and the lower surface of the gas spray head 120 is d2, so that the inflation space C switches to a low-pressure state.

[0054] like Figure 5 , Figure 6 As shown, the gas spray head 120 can also be connected to a second lifting drive mechanism 121, which can drive the gas spray head 120 to move up and down. Specifically, the second lifting drive mechanism 121 drives the gas spray head 120 down to a distance d1 between its lower surface and the edge region of the base assembly 130, switching the inflation space C to a high-pressure state, and drives the gas spray head 120 up to a distance d2 between its lower surface and the edge region of the base assembly 130, switching the inflation space C to a low-pressure state.

[0055] In this embodiment, the base assembly 130 includes an edge ring assembly 132, such as Figure 2 As shown, the edge ring assembly 132 is located in the edge region of the base assembly 130, and the upper surface of the edge ring assembly 132 is higher than the upper surface of the central region of the base assembly 130. Therefore, by making the upper surface of the edge ring assembly 132 higher than the upper surface of the central region of the base assembly 130, while satisfying the spacing value d1, the inflation space C can be ensured to be sufficiently large to meet process requirements.

[0056] Furthermore, the edge ring assembly 132 includes a first cover ring 1321 and a second cover ring 1322 disposed on the upper surface of the first cover ring 1321. This allows for easy replacement of the two cover rings separately, facilitating maintenance. The inner diameter of the first cover ring 1321 is smaller than the outer diameter of the substrate, allowing the first cover ring 1321 to press against the edge region of the substrate's upper surface, preventing warping or other defects during processing. A transfer port 1031 is provided on the side wall of the reaction chamber 100. When the base assembly 130 descends to the position of the transfer port 1031, such as... Figure 4 As shown, the central region of the base assembly 130 is lower than the horizontal plane of the transfer port 1031, and the lower surface of the first cover ring 1321 is higher than the horizontal plane of the transfer port 1031. Optionally, a cover ring support 1032 can be provided on the side wall of the reaction chamber 100 above the transfer port 1031. During the descent of the base assembly 130, the edge ring assembly 132 is supported by the cover ring support 1032. The base assembly 130 continues to descend to the position of the transfer port 1031, and the substrate to be processed is transferred into the reaction chamber 100 and placed on the upper surface of the base assembly 130. During the ascent of the base assembly 130, the edge ring assembly 132 can press against the edge region of the upper surface of the substrate and continue to rise together.

[0057] Understandably, under the high-pressure condition, process gas is injected into the gas filling space C to undergo a deposition reaction on the upper surface of the substrate. During the reaction, the generated waste gas needs to be discharged from the gas filling space C. Therefore, under the high-pressure condition, while ensuring a high partial pressure in the gas filling space C, a gas discharge channel D needs to be provided between the second covering ring 1322 and the lower surface of the gas spray head 120. For example, if the distance between the second covering ring 1322 and the lower surface of the gas spray head 120 is set to 2mm, then the 2mm gap between the second covering ring 1322 and the lower surface of the gas spray head 120 forms the gas discharge channel D. Furthermore, the radial width of the second covering ring 1322 is greater than or equal to 30mm, thereby forming a "narrow and long" gas discharge channel D between the second covering ring 1322 and the lower surface of the gas spray head 120, further increasing the partial pressure of the gas filling space C.

[0058] Optionally, in the low-pressure state, the distance d2 between the second cover ring 1322 and the lower surface of the gas spray head 120 is relatively large, for example, between 5 mm and 8 mm, which helps to expel gas.

[0059] The reaction chamber 100 also has a vacuum structure for discharging the gas, i.e., the reaction waste products, from inside the reaction chamber 100. In one embodiment, such as... Figure 2 As shown, the extraction structure includes an extraction ring 140, which is disposed between the top wall and side wall of the reaction chamber 100, and has an annular extraction space A. The inlet 141 of the annular extraction space A is connected to the inside of the reaction chamber 100, and the outlet is connected to an external extraction device. The external extraction device extracts the gas inside the reaction chamber 100, i.e., the reaction waste product, into the annular extraction space A through the inlet 141, and discharges it to the outside of the chamber through the outlet. During the process, the gas in the gas source is delivered to the inside of the reaction chamber 100 through a conveying pipeline, and the subsequent gas is discharged to the outside of the reaction chamber 100 through the extraction ring 140. The gas pressure inside the reaction chamber 100 can be maintained through the gas spray head 120 and the extraction ring 140.

[0060] Optionally, the air inlet 141 is a plurality of holes evenly distributed circumferentially along the inner sidewall of the suction ring 140. For example, the number of holes is greater than 60, and the diameter of the air inlet 141 is greater than 4 mm. This can maintain the uniformity of gas distribution during the suction process and achieve the purpose of rapid and uniform suction.

[0061] Based on the same inventive concept, the present invention also provides a substrate processing method, implemented using the aforementioned vapor deposition apparatus, such as... Figure 7 As shown, the method includes the following steps:

[0062] S1. Control the inflation space to switch to a high-pressure state, and introduce the first process gas into the inflation space for a predetermined time;

[0063] S2. Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time.

[0064] S3. Control the inflation space to switch to a high-pressure state, and introduce the second process gas into the inflation space for a predetermined time.

[0065] S4. Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time.

[0066] Repeat steps S1 to S4 above until the thin film deposited on the substrate surface meets the requirements.

[0067] In addition, the substrate processing method further includes: controlling the base assembly to switch to a transfer state to transfer the substrate to be processed into the reaction chamber, or transferring the processed substrate out of the reaction chamber.

[0068] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0069] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A vapor deposition apparatus, characterized in that, include: The reaction chamber is used to perform vapor deposition processes; A base assembly for supporting the substrate is disposed below the reaction chamber; A gas spray head is disposed opposite to the base assembly and is located above the reaction chamber. The gas spray head is used to introduce process gas or purging gas into the reaction chamber. An inflation space is formed between the base assembly and the gas spray head. The inflation space can switch between high pressure and low pressure. The upper surface of the base assembly has a central region supporting the substrate and an edge region surrounding the central region. During the vapor deposition process, the edge region and the lower surface of the opposite gas spray head have a variable spacing value, which is smaller in the high-pressure state than in the low-pressure state. The controller is configured to introduce the process gas when the inflation space is under high pressure and to introduce the purge gas when the inflation space is under low pressure.

2. The vapor deposition apparatus as described in claim 1, characterized in that, The reaction of the vapor deposition process includes a first process gas and a second process gas; the controller is configured to: when the first process gas or the second process gas is introduced, to keep the filling space under high pressure, and when the first process gas or the second process gas is stopped, to keep the filling space under low pressure, and to introduce purge gas into the filling space under low pressure.

3. The vapor deposition apparatus as described in claim 1, characterized in that, The base assembly can be in a transfer state, where the spacing value is greater than the spacing value in the low-pressure state.

4. The vapor deposition apparatus as described in claim 2 or 3, characterized in that, Under high pressure, the base assembly rises or the gas spray head falls; under low pressure, the base assembly falls or the gas spray head rises.

5. The vapor deposition apparatus as described in claim 1, characterized in that, The base assembly includes an edge ring assembly located in the edge region, the upper surface of which is higher than the upper surface of the central region.

6. The vapor deposition apparatus as described in claim 5, characterized in that, The edge ring assembly includes a first cover ring and a second cover ring disposed on the upper surface of the first cover ring.

7. The vapor deposition apparatus as described in claim 6, characterized in that, The inner diameter of the first covering ring is smaller than the outer diameter of the substrate. A transfer port is provided on the side wall of the reaction chamber. When the base assembly descends to the position of the transfer port, the central area of ​​the base assembly is lower than the horizontal plane where the transfer port is located, and the lower surface of the first covering ring is higher than the horizontal plane where the transfer port is located.

8. The vapor deposition apparatus as described in claim 6, characterized in that, Under the high pressure condition, the distance between the second cover ring and the lower surface of the gas spray head is 2 mm.

9. The vapor deposition apparatus as described in claim 6, characterized in that, The radial width of the second cover ring is greater than or equal to 30 mm.

10. The vapor deposition apparatus as claimed in claim 6, characterized in that, Under the low pressure condition, the distance between the second cover ring and the lower surface of the gas spray head is between 5 mm and 8 mm.

11. The vapor deposition apparatus as claimed in claim 1, characterized in that, The reaction chamber sidewall is provided with an air extraction structure, which includes an annular air extraction chamber. The air inlet of the air extraction chamber is connected to the inflation space, and the air outlet of the air extraction chamber is connected to an external air extraction device.

12. The vapor deposition apparatus as claimed in claim 11, characterized in that, The air inlets are evenly distributed circumferentially along the sidewall of the reaction chamber.

13. The vapor deposition apparatus as claimed in claim 11, characterized in that, The number of air inlets is greater than 60.

14. The vapor deposition apparatus as claimed in claim 11, characterized in that, The diameter of the air inlet is greater than 4 mm.

15. A substrate processing method using a vapor deposition apparatus as described in any one of claims 1 to 14, characterized in that, The method includes the following steps: The inflation space is switched to a high-pressure state, and the first process gas is introduced into the inflation space for a predetermined time. Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time; The inflation space is switched to a high-pressure state, and a second process gas is introduced into the inflation space for a predetermined time. Control the inflation space to switch to a low-pressure state, and introduce purge gas into the inflation space for a predetermined time; Repeat the above steps until the film deposited on the substrate surface meets the requirements.

16. The substrate processing method as described in claim 15, characterized in that, Also includes: The base assembly is controlled to switch to the wafer transfer state, transferring the substrate to be processed into the reaction chamber, or transferring the processed substrate out of the reaction chamber.

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