A cox temperature-stable ceramic dielectric material and a method for preparing the same

Abstract

The application provides a COG temperature-stable ceramic dielectric material and a preparation method thereof, and particularly provides a ceramic dielectric material which comprises BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2 and Dy2O3 or Ho2O3 or Er2O3. The material has high dielectric constant, low dielectric loss and high insulation resistance.

Description

Technical Field

[0001] This invention relates to the field of ceramic dielectric materials, specifically to a COG temperature-stable ceramic dielectric material and its preparation method. Background Technology

[0002] Microwave communication is an important component of modern communication technology. Compared with ordinary radio waves, microwaves have advantages such as high frequency, short wavelength, and strong anti-interference ability, making them suitable as signal carriers for high-capacity, high-quality, and long-distance communication. Furthermore, because microwave communication uses wireless communication, it eliminates the need for laying cables, requires less capital investment, has a shorter construction period, is less affected by natural environment and terrain conditions, and has strong disaster resistance, giving it significant advantages over other communication methods. In recent years, microwave communication systems such as portable mobile phones, vehicle phones, satellite direct broadcast television (SLDTV), Global Positioning System (GPS), and military guidance systems have developed rapidly. Miniaturization, high-frequency operation, integration, high quality, and low cost have become inevitable trends in microwave technology development.

[0003] Currently, the dielectric constants of ceramics used to fabricate COG ceramic capacitors are relatively low, generally not exceeding 100. Among dielectric materials with dielectric constants exceeding 100, some are based on bismuth-based pyrochlore systems. Pyrochlore materials have high intrinsic dielectric losses (~10). -3 The other part consists of ceramic materials based on the BaO-Ln2O3-TiO2 system (BLT system) with a tungsten bronze structure. Ln2O3 is mainly composed of La2O3, Sm2O3, and Nd2O3, with reported dielectric constants reaching 80-90 and temperature coefficients <±30ppm / ℃. Doping with Pb ions can increase the dielectric constant to over 100, but this does not comply with RoHS standards. Furthermore, BLT system ceramics generally have high sintering temperatures (>1400℃), making densification difficult and hindering mass production. Currently, the commonly used method is to select low-melting-point glasses or oxides as sintering aids to achieve low-temperature densification sintering of ceramics. This results in a decrease in dielectric constant, an increase in dielectric loss, and changes in dielectric temperature characteristics. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in related technologies. Therefore, one objective of this invention is to provide a high-dielectric-weight, low-loss COG temperature-stable ceramic dielectric material and its preparation method. This high-dielectric-weight, low-loss COG temperature-stable ceramic dielectric material exhibits a high dielectric constant, low dielectric loss, and high insulation resistance. Simultaneously, the method of this invention effectively reduces the sintering temperature of BLT system materials with tungsten bronze structures without the addition of traditional glass frits or sintering aids, while optimizing the overall dielectric properties of the ceramic material.

[0005] Specifically, according to embodiments of the present invention, the dielectric constant of the high dielectric and low loss COG temperature-stable ceramic dielectric material is between 150 and 160, the dielectric loss is not greater than 0.0004, and the dielectric constant temperature coefficient is between -30 ppm / ℃ and +30 ppm / ℃, which meets the specifications of COG type dielectric ceramics.

[0006] In a first aspect, the present invention provides a ceramic dielectric material. According to embodiments of the invention, the ceramic dielectric material comprises BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2, and Dy2O3, Ho2O3, or Er2O3. The inventors have discovered that introducing one of Dy2O3, Ho2O3, or Er2O3 as a raw material for a ceramic dielectric material results in a ceramic dielectric material exhibiting a high dielectric constant, low dielectric loss, and high insulation resistance, while meeting the specifications for COG-type dielectric ceramics.

[0007] According to embodiments of the present invention, the above-mentioned ceramic dielectric material may further include at least one of the following additional technical features:

[0008] According to an embodiment of the present invention, the ceramic dielectric material is made from the following raw materials by molar percentage:

[0009] 15 mol% to 16 mol% of BaCO3 and / or BaO;

[0010] 2 mol% to 10 mol% Nd2O3;

[0011] 5 mol% to 10 mol% Bi₂O₃;

[0012] 55 mol% to 70 mol% TiO2; and

[0013] 0.5 mol% to 5 mol% of Dy2O3, Ho2O3, or Er2O3. The inventors have discovered that by controlling the above-mentioned raw materials within the above-mentioned addition range, it has a high dielectric constant, low dielectric loss, and high insulation resistance, and meets the specifications of C0G type dielectric ceramics.

[0014] According to an embodiment of the present invention, the ceramic dielectric material is made from the following raw materials by molar percentage:

[0015] 15 mol% BaCO3 and / or BaO;

[0016] 8.75 mol% Nd₂O₃;

[0017] 7 mol% Bi2O3;

[0018] 67.5 mol% TiO2; and

[0019] 1 mol% to 3 mol% of Dy₂O₃, Ho₂O₃, or Er₂O₃. The inventors have discovered that by controlling the addition of the above raw materials within the above-mentioned ranges, C0G-type dielectric ceramic materials with higher dielectric constants, lower dielectric losses, and higher insulation resistance can be prepared.

[0020] According to an embodiment of the present invention, the ceramic dielectric material is made from the following raw materials by molar percentage:

[0021] 15 mol% BaCO3 and / or BaO;

[0022] 8.75 mol% Nd₂O₃;

[0023] 7 mol% Bi2O3;

[0024] 67.5 mol% TiO2; and

[0025] 1.75 mol% of Dy2O3, Ho2O3, or Er2O3. The inventors have discovered that by controlling the addition range of the above raw materials, C0G-type dielectric ceramic materials with higher dielectric constant, lower dielectric loss, and higher insulation resistance can be prepared.

[0026] According to an embodiment of the present invention, the dielectric constant of the ceramic dielectric material is 150 to 160. This ceramic dielectric material has a high dielectric constant and meets the specifications for COG-type dielectric ceramics.

[0027] According to an embodiment of the present invention, the dielectric loss of the ceramic dielectric material is no greater than 0.0004. This ceramic dielectric material has low dielectric loss and meets the specifications for COG-type dielectric ceramics.

[0028] According to an embodiment of the present invention, the temperature coefficient of dielectric constant of the ceramic dielectric material is -30ppm / ℃ to +30ppm / ℃. The temperature coefficient of dielectric constant of this ceramic dielectric material meets the specifications for C0G type dielectric ceramics.

[0029] In another aspect, the present invention also provides a method for preparing ceramic dielectric materials. According to an embodiment of the present invention, the method includes:

[0030] (1) BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2 and Dy2O3 or Ho2O3 or Er2O3 are subjected to a first mixing treatment to obtain a mixture;

[0031] (2) The mixture is pre-calcined to obtain a pre-calcined material;

[0032] (3) The pre-fired material and binder are subjected to a second mixing treatment and a debinding treatment to obtain a ceramic green body;

[0033] (4) The ceramic green body is sintered to obtain the ceramic dielectric material. The method according to embodiments of the present invention effectively reduces the sintering temperature of BLT system materials with tungsten bronze structures without the addition of traditional glass frit or sintering aids, while optimizing the overall dielectric properties of the ceramic material. The ceramic dielectric material prepared by the method according to embodiments of the present invention has a high dielectric constant, low dielectric loss, and high insulation resistance, and meets the specifications for COG type dielectric ceramics.

[0034] According to embodiments of the present invention, the above method may further include at least one of the following additional technical features:

[0035] According to embodiments of the present invention, the molar ratio of BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2, and Dy2O3 or Ho2O3 or Er2O3 is (15 mol%–16 mol%) : (2 mol%–10 mol%) : (5 mol%–10 mol%) : (55 mol%–70 mol%) : (0.5 mol%–5 mol%). The inventors have found that ceramic dielectric materials prepared within this molar ratio range exhibit high dielectric constant, low dielectric loss, and high insulation resistance, and meet the specifications for COG-type dielectric ceramics.

[0036] According to embodiments of the present invention, the molar ratio of BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2, and Dy2O3 or Ho2O3 or Er2O3 is 15 mol%: 8.75 mol%: 7 mol%: 67.5 mol%: (1 mol% to 3 mol%). The inventors have found that ceramic dielectric materials prepared within this molar ratio range exhibit higher dielectric constants, lower dielectric losses, and higher insulation resistance, and meet the specifications for COG-type dielectric ceramics.

[0037] According to embodiments of the present invention, the molar ratio of BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2, and Dy2O3 or Ho2O3 or Er2O3 is 15 mol%: 8.75 mol%: 7 mol%: 67.5 mol%: 1.75 mol%. The inventors have found that ceramic dielectric materials prepared within this molar ratio range exhibit higher dielectric constants, lower dielectric losses, and higher insulation resistance, and meet the specifications for COG-type dielectric ceramics.

[0038] According to an embodiment of the present invention, the dielectric constant of the ceramic dielectric material is 150 to 160. This ceramic dielectric material has a high dielectric constant and meets the specifications for COG-type dielectric ceramics.

[0039] According to an embodiment of the present invention, the dielectric loss of the ceramic dielectric material is no greater than 0.0004. This ceramic dielectric material has low dielectric loss and meets the specifications for COG-type dielectric ceramics.

[0040] According to an embodiment of the present invention, the temperature coefficient of dielectric constant of the ceramic dielectric material is -30ppm / ℃ to +30ppm / ℃. The temperature coefficient of dielectric constant of this ceramic dielectric material meets the specifications for C0G type dielectric ceramics.

[0041] According to an embodiment of the present invention, the first mixing process is carried out by ball milling and drying.

[0042] According to an embodiment of the present invention, the rotational speed of the ball mill is 150 r / min to 400 r / min. The inventors have found that if the rotational speed is too low, the powder cannot be mixed evenly, and if the rotational speed is too high, the powder is prone to agglomeration.

[0043] According to an embodiment of the present invention, the ball milling time is 6 hours to 24 hours. The inventors have found that a mixed powder of excellent quality can be obtained within this time range.

[0044] According to an embodiment of the present invention, the drying temperature is 90℃ to 200℃. The inventors have found that the drying temperature affects the drying efficiency, and the drying efficiency is optimal within this temperature range. According to an embodiment of the present invention, the drying time is 1 to 6 hours, for example, 1 to 5 hours or 2 to 6 hours. The inventors have found that the drying efficiency is optimal within this time range.

[0045] According to an embodiment of the present invention, the pre-calcination temperature is 900°C to 1200°C. This temperature range is suitable for synthesizing the main crystalline phase.

[0046] According to an embodiment of the present invention, the pre-calcination treatment time is 1 hour to 6 hours. The inventors have found that the quality of the pre-calcined powder obtained within this time range is excellent.

[0047] According to an embodiment of the present invention, the heating rate of the pre-calcination treatment is 2°C / min to 10°C / min. The inventors have found that at this rate, the quality of the pre-calcined powder obtained is superior.

[0048] According to an embodiment of the present invention, the temperature of the adhesive removal process is 500°C to 600°C. This temperature allows for more effective removal of the binder from the ceramic green body.

[0049] According to an embodiment of the present invention, the adhesive removal process takes 2 to 6 hours. This time allows for more effective removal of the binder from the ceramic green body.

[0050] According to an embodiment of the present invention, the heating rate of the adhesive removal process is 0.5℃ / min to 5℃ / min. This rate allows for more effective removal of the binder from the ceramic green body.

[0051] According to embodiments of the present invention, the binder is selected from an aqueous solution of polyvinyl alcohol and / or an ethanol solution of polyvinyl butyral. The inventors have found that using these two binders for bonding powder particles facilitates subsequent tableting. According to embodiments of the present invention, the concentration of the aqueous solution of polyvinyl alcohol is 5wt%-8wt%. The inventors have found that this concentration range facilitates subsequent tableting.

[0052] According to an embodiment of the present invention, the concentration of the polyvinyl butyral ethanol solution is 5wt%-8wt%. The inventors have found that this concentration range facilitates subsequent tableting.

[0053] According to an embodiment of the present invention, the mass ratio of the pre-fired material to the binder is 4:1 to 6:1. The inventors have found that this ratio range facilitates subsequent tableting.

[0054] According to an embodiment of the present invention, the second mixing treatment followed by the debinding treatment further includes granulation treatment and tableting treatment.

[0055] According to an embodiment of the present invention, the sintering temperature is 1200℃~1280℃. At this temperature, the dielectric constant of the COG-type dielectric ceramic material can be more effectively increased and the dielectric loss reduced.

[0056] According to an embodiment of the present invention, the sintering treatment time is 3h to 7h. This time allows for a more effective increase in the dielectric constant of the COG-type dielectric ceramic material and a reduction in dielectric loss.

[0057] According to an embodiment of the present invention, the heating rate of the sintering treatment is 2°C / min to 10°C / min. At this rate, the dielectric constant of the COG-type dielectric ceramic material can be more effectively increased and the dielectric loss reduced.

[0058] In another aspect of the present invention, a method for preparing the above-mentioned ceramic material is also provided. According to an embodiment of the present invention, the method includes:

[0059] S100: Mix BaCO3 and / or BaO, Nd2O3, Bi2O3, Dy2O3 or Ho2O3 or Er2O3 and TiO2 and ball mill and dry;

[0060] In this step, BaCO3 and / or BaO, Nd2O3, Bi2O3, Dy2O3, Ho2O3, Er2O3, and TiO2 are weighed out according to their molar proportions and mixed evenly. The mixture is then added to a ball mill jar for wet ball milling at a speed of 150 r / min to 400 r / min for 6 h to 24 h to obtain a uniformly mixed powder. The powder is then dried at a temperature of 90℃ to 200℃ to obtain the final mixture. It should be noted that ball milling is a standard procedure in this field, and those skilled in the art can select the specific parameters of the ball mill according to actual conditions. For example, the dispersant used in ball milling may include anhydrous ethanol or high-purity water, and the milling media may include zirconia balls, steel balls, etc.

[0061] S200: Pre-fire the mixed powder;

[0062] In this step, the mixture obtained from S100 is pre-calcined at a temperature of 900℃~1200℃ for 1h~6h, with a pre-calcination heating rate of 2℃ / min~10℃ / min, thereby obtaining a pre-calcined material. By controlling the pre-calcination temperature, time, and heating rate, the raw material particles are densified and possess a certain degree of reactivity.

[0063] S300: Mix the pre-fired material with the binder, then granulate, press, and remove the adhesive;

[0064] In this step, the pre-fired material obtained from S200 is mixed with the binder, sieved to obtain granules, and then granulated, pressed, and debinded to obtain a ceramic green body. Further, the debinding temperature is 500℃~600℃, the time is 2h~6h, and the heating rate for debinding is 0.5℃ / min~5℃ / min, thereby removing the binder from the ceramic green body. Specifically, the binder includes at least one of a 5wt%-8wt% aqueous solution of polyvinyl alcohol and a 5wt%-8wt% ethanol solution of polyvinyl butyral.

[0065] S400: Sintering ceramic green bodies;

[0066] In this step, the ceramic green body obtained from S300 is sintered to obtain a C0G type dielectric ceramic material. Further, the sintering temperature is 1200℃~1280℃, the time is 3h~7h, and the sintering heating rate is 2℃ / min~10℃ / min.

[0067] Therefore, this method can be used to prepare COG-type dielectric ceramic materials with high dielectric constant and low dielectric loss. The dielectric constant temperature coefficient of the COG-type dielectric ceramic material is -30ppm / ℃ to +30ppm / ℃, which meets the specifications of COG-type dielectric ceramics. At the same time, this method effectively reduces the sintering temperature of BLT system materials with tungsten bronze structure without adding traditional glass frit or sintering aids, and optimizes the overall dielectric properties of the ceramic material.

[0068] In another aspect, the present invention also proposes applications of the ceramic dielectric materials described above, or ceramic dielectric materials prepared according to the methods described above, in the fields of communications, radar, or electronics. These applications include, but are not limited to, stacked antennas, dielectric antennas, filters, and resonators. Detailed Implementation

[0069] The embodiments of the present invention are described in detail below. These embodiments are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0070] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0071] The present invention will now be described with reference to specific embodiments. It should be noted that these embodiments are merely descriptive and do not limit the present invention in any way.

[0072] Example 1

[0073] (1) BaCO3 powder, Nd2O3 powder, Bi2O3 powder, Dy2O3 powder, and TiO2 powder were mixed according to the following molar ratios. The molar percentages of BaCO3 powder were 15%, Nd2O3 powder was 8.75%, Bi2O3 powder was 7%, Dy2O3 powder was 1.75%, and TiO2 powder was 67.5%. The weighed raw material powders were then added to a ball mill and wet-milled for 6 hours at a speed of 300 r / min. The resulting uniformly mixed powder was then dried at 150 degrees Celsius to obtain a dried mixture.

[0074] (2) The dried mixture was pre-fired at 1100℃ for 3 hours. The heating rate of the pre-fired mixture was 5℃ / min. The pre-fired mixture powder was then naturally cooled after being kept at the heat.

[0075] (3) Add binder (6wt% polyvinyl alcohol aqueous solution) to the pre-fired powder and mix. After sieving, obtain granules. Granulate, press, and debind the granules. The debinding temperature is 550℃, the debinding time is 2h, and the debinding heating rate is 3℃ / min to obtain ceramic green body.

[0076] (4) The obtained ceramic green body was sintered at 1260℃ for 6h with a sintering heating rate of 5℃ / min to obtain C0G type dielectric ceramic material.

[0077] Example 2

[0078] (1) BaCO3 powder, Nd2O3 powder, Bi2O3 powder, Ho2O3 powder, and TiO2 powder were mixed according to the following molar ratios. The molar percentages of BaCO3 powder were 15%, Nd2O3 powder was 8.75%, Bi2O3 powder was 7%, Ho2O3 powder was 1.75%, and TiO2 powder was 67.5%. The weighed raw material powders were then added to a ball mill and wet-milled for 6 hours at a speed of 300 r / min. The resulting uniformly mixed powder was then dried at 150 degrees Celsius to obtain a dried mixture.

[0079] (2) The dried mixture was pre-fired at 1100℃ for 3 hours. The heating rate of the pre-fired mixture was 5℃ / min. The pre-fired mixture powder was then naturally cooled after being kept at the heat.

[0080] (3) Add binder (6wt% polyvinyl alcohol aqueous solution) to the pre-fired powder and mix. After sieving, obtain granules. Granulate, press, and debind the granules. The debinding temperature is 550℃, the debinding time is 2h, and the debinding heating rate is 3℃ / min to obtain ceramic green body.

[0081] (4) The obtained ceramic green body was sintered at 1260℃ for 6h with a sintering heating rate of 5℃ / min to obtain C0G type dielectric ceramic material.

[0082] Example 3

[0083] (1) BaCO3 powder, Nd2O3 powder, Bi2O3 powder, Er2O3 powder, and TiO2 powder were mixed according to the following molar ratios. The molar percentages of BaCO3 powder were 15%, Nd2O3 powder was 8.75%, Bi2O3 powder was 7%, Er2O3 powder was 1.75%, and TiO2 powder was 67.5%. The weighed raw material powders were then added to a ball mill and wet-milled for 6 hours at a speed of 300 r / min. The resulting uniformly mixed powder was then dried at 150 degrees Celsius to obtain a dried mixture.

[0084] (2) The dried mixture was pre-fired at 1100℃ for 3 hours. The heating rate of the pre-fired mixture was 5℃ / min. The pre-fired mixture powder was then naturally cooled after being kept at the heat.

[0085] (3) Add binder (6wt% polyvinyl alcohol aqueous solution) to the pre-fired powder and mix. After sieving, obtain granules. Granulate, press, and debind the granules. The debinding temperature is 550℃, the debinding time is 2h, and the debinding heating rate is 3℃ / min to obtain ceramic green body.

[0086] (4) The obtained ceramic green body was sintered at 1260℃ for 6h with a sintering heating rate of 5℃ / min to obtain C0G type dielectric ceramic material.

[0087] Comparative Example 1

[0088] The main differences between Comparative Example 1 and Example 1 are as follows:

[0089] (1) BaCO3 powder, Nd2O3 powder, Bi2O3 powder, and TiO2 powder were mixed according to the following molar ratios. The molar percentages of BaCO3 powder were 15%, Nd2O3 powder was 8.75%, Bi2O3 powder was 8.75%, and TiO2 powder was 67.5%.

[0090] (4) The obtained ceramic green body was sintered at 1260℃ for 6 hours, and the sintering heating rate was 5℃ / min.

[0091] Comparative Example 2

[0092] The main differences between Comparative Example 2 and Example 1 are as follows:

[0093] (1) BaCO3 powder, Nd2O3 powder, Bi2O3 powder, Y2O3 powder, and TiO2 powder were mixed according to the following molar ratios. The molar percentages of BaCO3 powder were 15%, Nd2O3 powder was 8.75%, Y2O3 powder was 1.75%, Bi2O3 powder was 7%, and TiO2 powder was 67.5%.

[0094] (4) The obtained ceramic green body was sintered at 1240℃ for 6 hours, and the sintering heating rate was 5℃ / min.

[0095] The composition and dosage of the high dielectric constant C0G type dielectric ceramic materials in Examples 1-3 and Comparative Examples 1-2 are shown in Table 1.

[0096] Table 1

[0097]

[0098] The properties of the ceramic materials obtained in Examples 1-3 and Comparative Examples 1-2 were measured.

[0099] The ceramic material was tested for performance at 1V and 1MHz, including its dielectric constant, dielectric loss at 25℃, insulation resistivity at 25℃, insulation resistivity at 125℃, and dielectric temperature coefficient (TCC).

[0100] The dielectric constant, dielectric loss at 25℃, insulation resistivity at 25℃, and insulation resistivity at 125℃ can be obtained using existing known methods.

[0101] The temperature coefficient of dielectric constant (TCC) represents the degree to which the capacitance of a material changes with temperature. It is determined by testing the capacitance value at temperatures ranging from -55℃ to 125℃ and calculating it using the following formula:

[0102]

[0103] Where T0 is the target test temperature.

[0104] The specific measurement results are shown in Table 2.

[0105] Table 2

[0106]

[0107] As shown in Table 2, the dielectric ceramics of Examples 1-3 have a large dielectric constant and a small dielectric loss, and the temperature coefficient of dielectric constant is -30ppm / ℃ to +30ppm / ℃, which meets the specifications for C0G type dielectric ceramics. This indicates that the dielectric ceramic of this application has a high dielectric constant, low dielectric loss, and high insulation resistance.

[0108] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0109] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A ceramic dielectric material, characterized by, 15-16 mol% of BaCO3 and / or BaO; 2-10 mol% of Nd2O3; 5-10 mol% of Bi2O3; 55-70 mol% of TiO2; and 0.5-5 mol% of Ho2O3 or Er2O3, the ceramic dielectric material has a dielectric constant of 150-160; the ceramic dielectric material has a dielectric loss of no more than 0.0004; the ceramic dielectric material has a dielectric constant temperature coefficient of -30 ppm / °C to +30 ppm / °C. 15 mol% of BaCO3 and / or BaO; 2. The ceramic dielectric material of claim 1, wherein, 8.75 mol% of Nd2O3; 7 mol% of Bi2O3; 67.5 mol% of TiO2; and 1.75 mol% of Ho2O3 or Er2O3. comprises: (1) performing first mixing treatment on BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2 and Ho2O3 or Er2O3 to obtain a mixture; 3. A method of making a ceramic dielectric material, characterized by, (2) performing pre-sintering treatment on the mixture to obtain a pre-sintered material; (3) performing second mixing treatment on the pre-sintered material and a binder, and performing glue removal treatment to obtain a ceramic green body; (4) performing sintering treatment on the ceramic green body to obtain the ceramic dielectric material; the molar ratio of BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2 and Ho2O3 or Er2O3 is (15-16 mol%):(2-10 mol%):(5-10 mol%):(55-70 mol%):(0.5-5 mol%), the ceramic dielectric material has a dielectric constant of 150-160; the ceramic dielectric material has a dielectric loss of no more than 0.0004; the ceramic dielectric material has a dielectric constant temperature coefficient of -30 ppm / °C to +30 ppm / °C. the molar ratio of BaCO3 and / or BaO, Nd2O3, Bi2O3, TiO2 and Ho2O3 or Er2O3 is 15 mol%:8.75 mol%:7 mol%:67.5 mol%:1.75 mol%. the first mixing treatment is performed by ball milling and drying.

4. The method of claim 3, wherein, the rotation speed of the ball milling is 150-400 r / min.

5. The method according to claim 3 or 4, characterized in that, the ball milling time is 6-24 h.

6. The method of claim 5, wherein, the drying temperature is 90-200 °C.

7. The method of claim 5, wherein, the drying time is 1-6 h.

8. The method of claim 5, wherein, the pre-sintering treatment temperature is 900-1200 °C.

9. The method of claim 5, wherein, the pre-sintering treatment time is 1-6 h.

10. The method of claim 3 or 4, wherein, the pre-sintering treatment temperature rising rate is 2-10 °C / min.

11. The method of claim 10, wherein, the glue removal treatment temperature is 500-600 °C.

12. The method of claim 10, wherein, the glue removal treatment time is 2-6 h.

13. The method of claim 3 or 4, wherein, the glue removal treatment temperature rising rate is 0.5-5 °C / min.

14. The method of claim 13, wherein, the binder is selected from polyvinyl alcohol aqueous solution and / or polyvinyl butyral alcohol solution.

15. The method of claim 13, wherein, the concentration of the polyvinyl alcohol aqueous solution is 5-8 wt%.

16. The method of claim 3 or 4, wherein, ​ 17. The method of claim 16, wherein, ​ 18. The method of claim 16, wherein, The concentration of the polyvinyl butyral ester ethanol solution is 5wt%-8wt%.

19. The method of claim 3 or 4, wherein, The mass ratio of the pre-sintering material to the binder is 4:1-6:

1.

20. The method of claim 3 or 4, wherein, The second mixing treatment is followed by a granulation treatment and a tabletting treatment before the glue discharging treatment.

21. The method of claim 3 or 4, wherein, The sintering treatment is at a temperature of 1200°C-1280°C.

22. The method of claim 21, wherein, The sintering treatment is for a time of 3h-7h.

23. The method of claim 21, wherein, The sintering treatment is at a temperature increase rate of 2°C / min-10°C / min.

24. Use of the ceramic dielectric material of any one of claims 1-2 or obtained according to the method of any one of claims 3-23 in the field of telecommunications, radar or electronics.

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