Single-channel power test method and system for multi-channel VCSEL chip

Abstract

The present application relates to a single-channel power test method and system for a multi-channel VCSEL chip. During the test, a driving signal is provided so that the driving signal drives all channels of the multi-channel VCSEL chip to be tested to be in a lit state; the full-channel total power and near-field image of the multi-channel VCSEL chip to be tested in the lit state are obtained; the single-channel grayscale value ratio of the multi-channel VCSEL chip to be tested is obtained according to the near-field image; and the single-channel power of the multi-channel VCSEL chip to be tested is obtained according to the full-channel total power and the single-channel grayscale value ratio. In the present application, the single-channel power of the multi-channel VCSEL chip to be tested is obtained by combining full-channel total power detection and near-field image processing, avoiding repeated testing of the multi-channel VCSEL chip to obtain the power of a single channel, and shortening the test time.

Description

Technical Field

[0001] This application relates to the technical field of multi-channel VCSEL (Vertical-Cavity Surface-Emitting Laser Array) chip testing, and particularly to a single-channel power testing method and system for multi-channel VCSEL chips. Background Art

[0002] In the technical field of multi-channel VCSEL chip testing, when testing the power of each channel in a multi-channel VCSEL chip, it is necessary to drive and test each channel one by one, resulting in slow testing efficiency. Summary of the Invention

[0003] Based on this, in view of the above technical problems, it is necessary to provide a single-channel power testing method and system for multi-channel VCSEL chips that can improve the detection efficiency.

[0004] In a first aspect, this application provides a single-channel power testing method for multi-channel VCSEL chips, and the testing method includes:

[0005] Providing a driving signal; the driving signal is used to drive all channels of the multi-channel VCSEL chip to be tested to be in a lit state;

[0006] Obtaining the total power of all channels and the near-field image of the multi-channel VCSEL chip to be tested in the lit state;

[0007] Obtaining the single-channel gray value ratio of the multi-channel VCSEL chip to be tested according to the near-field image; and,

[0008] Obtaining the single-channel power of the multi-channel VCSEL chip to be tested according to the total power of all channels and the single-channel gray value ratio.

[0009] In one embodiment, the obtaining the single-channel gray value ratio of the multi-channel VCSEL chip to be tested according to the near-field image includes:

[0010] Converting the near-field image into a gray-scale image;

[0011] Obtaining the total-channel gray value and the single-channel gray value of the multi-channel VCSEL chip to be tested according to the gray-scale image;

[0012] Obtaining the single-channel gray value ratio according to the total-channel gray value and the single-channel gray value.

[0013] In one embodiment, the calculation formula for the single-channel power is:

[0014] ;

[0015] Wherein, Pavg_channel is the single-channel power, Pavg_chip is the total power of all channels, and GrayRate is the ratio of the single-channel gray value.

[0016] In one embodiment, it further includes:

[0017] Obtain the duty cycle corresponding to the multi-channel VCSEL chip to be tested in the lit state;

[0018] Obtain the single-channel peak power of the multi-channel VCSEL chip to be tested according to the single-channel power and the duty cycle.

[0019] In one embodiment, the obtaining the duty cycle corresponding to the multi-channel VCSEL chip to be tested in the lit state includes:

[0020] Obtain the optical pulse width corresponding to the multi-channel VCSEL chip to be tested in the lit state and the modulation period of the driving signal;

[0021] Obtain the duty cycle according to the optical pulse width and the modulation period.

[0022] In one embodiment, the calculation formula of the duty cycle is:

[0023] ;

[0024] Wherein, Pulse width is the optical pulse width, period is the modulation period, and η is the duty cycle.

[0025] In one embodiment, the calculation formula of the single-channel peak power is:

[0026] ;

[0027] Wherein, Ppeak is the single-channel peak power; Pavg_channel is the single-channel power; η is the duty cycle.

[0028] In one embodiment, it further includes:

[0029] Repeat the single-channel power test method of the multi-channel VCSEL chip as described above multiple times, and use the average value of the single-channel powers obtained multiple times as the final test result.

[0030] In a second aspect, the present application further provides a single-channel power test system for a multi-channel VCSEL chip, and the test system includes:

[0031] A driving device, connected to the multi-channel VCSEL chip to be tested, for providing a driving signal to drive all channels of the multi-channel VCSEL chip to be tested to be in a lit state;

[0032] A power detection device, connected to the multi-channel VCSEL chip to be tested, for obtaining the total power of all channels of the multi-channel VCSEL chip to be tested in the lit state;

[0033] An image acquisition device, for acquiring a near-field image of the multi-channel VCSEL chip to be tested in the lit state; and,

[0034] A processor, respectively connected to the driving device, the power detection device and the image acquisition device, for executing to obtain the single-channel power of the multi-channel VCSEL chip to be tested according to the total power of all channels and the proportion of the single-channel gray value in the above-mentioned single-channel power test method of the multi-channel VCSEL chip.

[0035] In one embodiment, it further includes:

[0036] A pulse width detection device, connected to the multi-channel VCSEL chip to be tested and the processor, for detecting the modulation period corresponding to the multi-channel VCSEL chip to be tested in the lit state.

[0037] For the above-mentioned single-channel power test method and system of the multi-channel VCSEL chip, during the test, a driving signal is provided to drive all channels of the multi-channel VCSEL chip to be tested to be in a lit state; the total power of all channels and the near-field image of the multi-channel VCSEL chip to be tested in the lit state are obtained; the proportion of the single-channel gray value of the multi-channel VCSEL chip to be tested is obtained according to the near-field image; and, the single-channel power of the multi-channel VCSEL chip to be tested is obtained according to the total power of all channels and the proportion of the single-channel gray value. In this application, the single-channel power of the multi-channel VCSEL chip to be tested is obtained by combining the total power detection of all channels and the near-field image processing, avoiding repeated testing of the multi-channel VCSEL chip to obtain the power of a single channel, and shortening the test time. In addition, on the basis of ensuring the high-precision detection of the total power of all channels, the accuracy of obtaining the single-channel power of the multi-channel VCSEL chip to be tested can be ensured according to the total power of all channels and the proportion of the single-channel gray value, avoiding test errors caused by repeated testing of the multi-channel VCSEL chip. And only one test of the multi-channel VCSEL chip is required to obtain the total power of all channels, without multiple tests, reducing the test difficulty, and while improving the test accuracy, the test efficiency can be ensured. Brief Description of the Drawings

[0038] To more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings required for the description of the embodiments of the present application or the related art. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0039] Figure 1 One of the flow schematic diagrams of the single-channel power test method for a multi-channel VCSEL chip in an embodiment;

[0040] Figure 2 The flow schematic diagram of obtaining the single-channel gray value ratio of a multi-channel VCSEL chip to be tested according to the near-field image in an embodiment;

[0041] Figure 3 Another flow schematic diagram of the single-channel power test method for a multi-channel VCSEL chip in an embodiment;

[0042] Figure 4 The flow schematic diagram of obtaining the duty cycle corresponding to a multi-channel VCSEL chip to be tested in the lit state in an embodiment;

[0043] Figure 5 The third flow schematic diagram of the single-channel power test method for a multi-channel VCSEL chip in an embodiment;

[0044] Figure 6 The structural schematic block diagram of a single-channel power test system for a multi-channel VCSEL chip in an embodiment;

[0045] Figure 7 The internal structure diagram of a computer device in an embodiment. Detailed implementation manners

[0046] In order to make the objectives, technical solutions and advantages of the present application clearer, the following further details the present application in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0047] In this field, the multi-channel VCSEL chip to be measured has the following advantages: (1) It can effectively control the area of the light-emitting region and improve the peak power; (2) It has a higher electro-optical conversion efficiency and can save system power consumption; (3) Through a suitable system design, system-level anti-interference ability can be achieved; (4) It has better heat dissipation. These advantages enable the multi-channel VCSEL chip to be widely used in vehicle-mounted LiDAR (Light Detection and Ranging), sensing, etc. Based on this, this application provides a single-channel power test method and system for a multi-channel VCSEL chip, which combines laser power measurement and image processing technologies, and can efficiently and accurately test the power of each channel in the multi-channel VCSEL chip to be measured, which is of great significance for optimizing the product design of VCSEL components and improving product quality.

[0048] In one embodiment, a single-channel power test method for a multi-channel VCSEL chip is provided. Among them, the "channel" in the multi-channel VCSEL chip refers to the vertical cavity surface emitting laser (VCSEL) unit (light-emitting point) that is independently controlled and operated inside the VCSEL chip. Each of these channels is configured with a positive electrical connection line and a negative electrical connection line, so that each channel can be individually addressed and lit. Each channel can further include at least one light-emitting hole. In a specific embodiment of this application, each channel can include 6 light-emitting holes, and the 6 light-emitting holes can be arranged in an array distribution; it can be understood that in other embodiments, each channel can also include 5 light-emitting holes, 8 light-emitting holes, 56 light-emitting holes, etc., and this application does not make further limitations in this regard. And the single-channel power test method for the multi-channel VCSEL chip in this application can accurately obtain the power of each single channel in the multi-channel VCSEL chip without separately detecting the VCSEL units in each channel. That is to say, the "single-channel power" in this application refers to the power of each VCSEL unit (light-emitting point) in the multi-channel VCSEL chip. This embodiment takes the application of this method to a terminal as an example for illustration. It can be understood that this method can also be applied to a server, and can also be applied to a system including a terminal and a server, and is implemented through the interaction between the terminal and the server.

[0049] As Figure 1 shown, the attached Figure 1 figure shows one of the flow diagrams of the single-channel power test method for the multi-channel VCSEL chip in this embodiment. In this embodiment, this method includes the following steps S101 to step S104.

[0050] Step S101, provide a driving signal; the driving signal is used to drive all channels of the multi-channel VCSEL chip to be measured to be in a lit state.

[0051] Exemplarily, a driving signal can be output from a driving device to the multi-channel VCSEL chip under test. In this embodiment, all channels in the multi-channel VCSEL chip under test are driven to the lit state by the driving signal, that is, all VCSEL units in the multi-channel VCSEL chip under test are in the lit state. On the one hand, it can avoid separately driving and testing each channel multiple times, improving the testing efficiency; on the other hand, all channels are lit simultaneously, which is beneficial to accurately measuring the total power of all channels of the multi-channel VCSEL chip under test later and avoiding testing errors.

[0052] In order to obtain a more accurate total power of all channels later, a driving signal with a pulse width in the nanometer level can be used to drive the multi-channel VCSEL chip under test, ensuring that the multi-channel VCSEL chip under test reaches a peak power of dozens or even hundreds within an instant, and it can ensure that the thermal effect of the multi-channel VCSEL chip under test is not too large, so that the VCSEL chips of all channels are lit simultaneously.

[0053] Exemplarily, for a 48-channel multi-channel VCSEL chip under test, the multi-channel VCSEL chip under test is actually driven to work with a driving signal pulse width of 14.62 ns, a modulation period of 15 μs, and a peak current of 2 A for full lighting. The specific settings can refer to the driving requirements of different multi-channel VCSEL chips under test, and are not limited to this.

[0054] Step S102, obtain the total power of all channels and the near-field image of the multi-channel VCSEL chip under test in the lit state.

[0055] Among them, the total power of all channels of the multi-channel VCSEL chip under test refers to the sum of the optical powers output when all independent VCSEL channels / units in the multi-channel VCSEL chip under test work simultaneously. The total power of all channels of the multi-channel VCSEL chip under test can reflect the overall optical output ability of the multi-channel VCSEL chip under test in the full-load working state.

[0056] The near-field image refers to an image obtained through the principle of detecting and imaging the non-radiative field in the optical phenomenon within one wavelength from the surface of an object.

[0057] Exemplarily, the total power of all channels of the multi-channel VCSEL chip under test can be directly obtained by a detection device, and the near-field image of the multi-channel VCSEL chip under test can be scanned and obtained by a near-field scanning device or other near-field imaging technologies.

[0058] Step S103, obtain the proportion of the gray value of a single channel of the multi-channel VCSEL chip under test according to the near-field image.

[0059] Exemplarily, a programming language (such as Python) and precise image processing tools such as image processing software (such as Photoshop) or GIMP (GNU Image Manipulation Program) can be used to perform image analysis on the near-field image, and the proportion of the single-channel gray value of each single channel in the multi-channel VCSEL chip to be measured can be quickly and accurately obtained.

[0060] By obtaining the proportion of the gray value of each single channel in the near-field image of the multi-channel VCSEL chip to be measured, the output power of the laser pulse output when each single channel of the multi-channel VCSEL chip to be measured works alone can be obtained indirectly. The proportion of the gray value can be understood as the proportion of the gray value of a single channel in the sum of the gray values of all channels in the multi-channel VCSEL chip to be measured.

[0061] And, step S104, obtaining the single-channel power of the multi-channel VCSEL chip to be measured according to the total power of all channels and the proportion of the single-channel gray value.

[0062] It can be understood that since the driving signal is a pulse width modulation signal, correspondingly, the total power of all channels of the multi-channel VCSEL chip to be measured is not a constant value either. Therefore, the total power of all channels and the single-channel power in this embodiment are both average powers, that is, the total power of all channels can be understood as the total average power of all channels, and the single-channel power can be understood as the single-channel average power.

[0063] In this embodiment, the single-channel power of the multi-channel VCSEL chip to be measured is obtained by combining the total power detection of all channels and near-field image processing, avoiding repeated testing of the multi-channel VCSEL chip to obtain the power of a single channel and shortening the testing time. In addition, on the basis of ensuring the high-precision detection of the total power of all channels, the accuracy of the single-channel power of the multi-channel VCSEL chip to be measured can be ensured according to the total power of all channels and the proportion of the single-channel gray value, avoiding test errors caused by repeated testing of the multi-channel VCSEL chip. And only one test of the multi-channel VCSEL chip is required to obtain the total power of all channels, without multiple tests, reducing the testing difficulty, and while improving the testing accuracy, the testing efficiency can be ensured.

[0064] In one embodiment, refer to the appendix Figure 2 , appendix Figure 2 shows a schematic flow chart of obtaining the proportion of the single-channel gray value of the multi-channel VCSEL chip to be measured according to the near-field image. In this embodiment, obtaining the proportion of the single-channel gray value of the multi-channel VCSEL chip to be measured according to the near-field image includes the following steps S201 to step S203.

[0065] Step S201: Convert the near-field image into a grayscale image.

[0066] Among them, a grayscale image is an image that only has intensity information and no color information. In a grayscale image, the value of each pixel represents the brightness level of that point, usually ranging from 0 (black) to 255 (white). A grayscale image can also be referred to as a single-channel image or a black-and-white image.

[0067] Exemplarily, the near-field image can be analyzed through a programming language (such as Python) and using precise image processing tools such as image processing software (such as Photoshop or GIMP (GNU Image Manipulation Program)) to quickly and accurately convert the near-field image into a grayscale image. When selecting a specific method, factors such as the actual application scenario, processing efficiency, and accuracy requirements can be comprehensively considered for flexible selection, not limited to this.

[0068] Step S202: Obtain the full-channel grayscale value and single-channel grayscale value of the multi-channel VCSEL chip to be tested based on the grayscale image.

[0069] By further processing the grayscale image, each single-channel grayscale value can be obtained, and the sum of each single-channel grayscale value can be used to obtain the full-channel grayscale value of the multi-channel VCSEL chip to be tested.

[0070] Among them, the single-channel grayscale value refers to the grayscale value of a single channel in the multi-channel VCSEL chip to be tested; the full-channel grayscale value refers to the sum of the grayscale values of all channels in the multi-channel VCSEL chip to be tested.

[0071] Step S203: Obtain the proportion of the single-channel grayscale value based on the full-channel grayscale value and the single-channel grayscale value.

[0072] Exemplarily, it can be obtained through the following formula:

[0073] ;

[0074] Among them, GrayRate is the proportion of the single-channel grayscale value, Gray_channel is the single-channel grayscale value, and Gray_chip is the full-channel grayscale value of all channels in the multi-channel VCSEL chip to be tested.

[0075] In this embodiment, by obtaining each single-channel grayscale value, the proportion of each single-channel grayscale value in the multi-channel VCSEL chip to be tested can be obtained based on the full-channel grayscale value and each single-channel grayscale value in the multi-channel VCSEL chip to be tested. Based on this, the proportion of each single-channel grayscale value can be simply, quickly, and accurately obtained through a combination of image processing and calculation, improving the test efficiency.

[0076] In one embodiment, the calculation formula for single-channel power is as follows:

[0077] ;

[0078] wherein, Pavg_channel is the single-channel power, Pavg_chip is the total power of all channels, and GrayRate is the ratio of the single-channel grayscale value.

[0079] In this embodiment, the single-channel power to be measured can be quickly and accurately obtained by multiplying the total power of all channels by the ratio of the single-channel grayscale value, avoiding repeated individual tests on each single channel in the multi-channel VCSEL chip to be measured, and shortening the test time.

[0080] In one embodiment, the present application also provides a method for testing the single-channel power of a multi-channel VCSEL chip. Refer to the appendix Figure 3 , appendix Figure 3 shows the second schematic flow chart of the method for testing the single-channel power of the multi-channel VCSEL chip in this embodiment. The method for testing the single-channel power of the multi-channel VCSEL chip in this embodiment further includes the following steps S301 to step S302.

[0081] Step S301, obtain the duty cycle corresponding to the multi-channel VCSEL chip to be measured in the lit state.

[0082] Among them, since the multi-channel VCSEL chip to be measured operates under the drive of a drive signal, and the drive signal is a pulse width modulation signal. Correspondingly, the duty cycle corresponding to the multi-channel VCSEL chip to be measured in the lit state corresponds to the duty cycle of the drive signal. Exemplarily, the duty cycle of the optical signal output by the multi-channel VCSEL chip to be measured in the lit state can be obtained according to the drive signal. Another exemplarily, it can also be obtained by directly measuring the waveform of the optical signal output by the multi-channel VCSEL chip to be measured in the lit state and analyzing the waveform of the optical signal. In addition, it can also be obtained by calculating through the corresponding parameter relationship, such as the pulse width of the optical signal output by the multi-channel VCSEL chip to be measured in the lit state and the modulation period of the drive signal. It is not limited to this.

[0083] Step S302, obtain the single-channel peak power of the multi-channel VCSEL chip to be measured according to the single-channel power and the duty cycle.

[0084] Among them, the duty cycle refers to the ratio of the light-emitting time to the entire cycle time in the pulsed optical signal. The larger the duty cycle, the longer the continuous light-emitting time in one cycle. The single-channel peak power refers to the maximum peak power reached within a single pulse restart. When the multi-channel VCSEL chip under test emits laser pulses, the power of each laser pulse varies with time. During the duration of the laser pulse, the multi-channel VCSEL chip under test outputs a relatively high power; while during the pulse interval (low level), the device does not output power or outputs an extremely low power. Therefore, the duty cycle directly affects the amount of energy output by the multi-channel VCSEL chip under test per unit time. The higher the duty cycle, the more time the multi-channel VCSEL chip under test operates at a relatively high power, thereby increasing the power of each single channel. At the same time, since the peak power of each single channel is the maximum value reached during the duration of the laser pulse, the change in the duty cycle will also affect the performance of the peak power of each single channel.

[0085] In this embodiment, the relationship between the duty cycle, the single-channel power, and the single-channel peak power is skillfully utilized. By means of calculation, the individual driving test of each single channel is avoided to obtain the single-channel peak power, which improves the test efficiency and ensures the test accuracy.

[0086] It can be understood that although only the acquisition steps of the single-channel peak power of one single channel in the multi-channel VCSEL chip under test are exemplified in this embodiment, the acquisition methods of the single-channel peak power of each channel can be the same, that is, each channel can be obtained through step S301 and step S302 in this embodiment, and it is necessary to ensure that the obtained single-channel peak power corresponds to the single-channel power.

[0087] In one embodiment, refer to the appendix Figure 4 , appendix Figure 4 shows a schematic flowchart of obtaining the duty cycle corresponding to the multi-channel VCSEL chip under test in the lit state in this embodiment. In this embodiment, obtaining the duty cycle corresponding to the multi-channel VCSEL chip under test in the lit state includes the following steps S401 to step S402.

[0088] Step S401, obtain the optical pulse width and the modulation period of the drive signal corresponding to the multi-channel VCSEL chip under test in the lit state.

[0089] Among them, the optical pulse width can be directly detected by a pulse width detection device. After the pulse width detection device finishes detection, the pulse width detection device can establish a connection with the execution subject of step S401 through wireless transmission, wired transmission, etc., so as to obtain the optical pulse width.

[0090] In order to more accurately detect the optical pulse width, a precise power detector and a high-speed optical pulse width detector can be used. For example, the total power of all channels can be detected by a power meter or an integrating sphere, and an optoelectronic detector with a frequency above 1 GHz can be used to detect the optical pulse width.

[0091] Step S402: Obtain the duty cycle according to the optical pulse width and the modulation period.

[0092] Since the multi-channel VCSEL chip to be measured emits laser pulses under the drive of a drive signal, the modulation period of the drive signal can reflect the on and off time of the laser pulses. Therefore, the duty cycle of the laser pulses can be obtained through the optical pulse width and the modulation period of the drive signal.

[0093] In one embodiment, the calculation formula for the duty cycle is:

[0094] ;

[0095] where Pulse width is the optical pulse width, period is the modulation period, and η is the duty cycle.

[0096] In one embodiment, the calculation formula for the single-channel peak power is:

[0097] ;

[0098] where Ppeak is the single-channel peak power; Pavg_channel is the single-channel power; and η is the duty cycle.

[0099] In one embodiment, repeat the single-channel power test method of the multi-channel VCSEL chip in any of the above embodiments multiple times, and use the average value of the single-channel powers obtained multiple times as the final test result.

[0100] Correspondingly, when obtaining the single-channel peak power, the average value of the single-channel peak powers obtained multiple times can also be used as the final single-channel peak power test result.

[0101] Among them, the multi-channel VCSEL chips to be measured for repeated testing can be the same multi-channel VCSEL chip to be measured, or multi-channel VCSEL chips of the same batch. The multiple tests can be performed by the same operator or different operators, and are not limited thereto.

[0102] In this embodiment, repeating the test multiple times and using the average value of the single-channel powers obtained multiple times as the final test result can evaluate the repeatability of the test, obtain a more accurate test result, and reduce the test error.

[0103] In one embodiment, refer to the appendix Figure 5 AppendixFigure 5 FIG. 3 shows a schematic flow chart of the single-channel power test method for a multi-channel VCSEL chip in this embodiment. The single-channel power test method for the multi-channel VCSEL chip in this embodiment includes the following processes S501 to step S510.

[0104] In step S501, a driving device outputs a driving signal to the multi-channel VCSEL chip to be tested in a nanosecond-level driving manner to drive all channels in the multi-channel VCSEL chip to be tested to be in a lit state simultaneously.

[0105] In step S502, obtain the total power of all channels of the laser pulses emitted when all channels in the multi-channel VCSEL chip to be tested are in a lit state as measured by a power meter or an integrating sphere.

[0106] In step S503, obtain the optical pulse width corresponding to the state when all channels in the multi-channel VCSEL chip to be tested are in a lit state as measured by a high-speed photodetector.

[0107] In step S504, obtain the near-field image of the multi-channel VCSEL chip to be tested when all channels are in a lit state as captured by a CCD camera.

[0108] In step S505, perform image processing on the near-field image to respectively obtain the single-channel gray value and the all-channel gray value corresponding to the multi-channel VCSEL chip to be tested.

[0109] In step S506, obtain the ratio of the single-channel gray value based on the single-channel gray value and the all-channel gray value.

[0110] In step S507, obtain the single-channel power of the multi-channel VCSEL chip to be tested based on the total power of all channels and the ratio of the single-channel gray value.

[0111] In step S508, obtain the duty cycle corresponding to the multi-channel VCSEL chip to be tested based on the optical pulse width and the modulation period.

[0112] In step S509, obtain the peak power of each single channel in the multi-channel VCSEL chip to be tested based on the duty cycle and the single-channel power.

[0113] In step S510, repeat steps S501 to S509 more than ten times, and use the average value of the peak powers of each single channel obtained ten times as the test result of the peak power of each single channel in the multi-channel VCSEL chip to be tested.

[0114] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least some of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least some of the steps or stages in other steps or other steps.

[0115] In one embodiment, the present application further provides a single-channel power test system for a multi-channel VCSEL chip. Refer to the attached Figure 6 , attached Figure 6 FIG. shows a schematic block diagram of the structure of the single-channel power test system 600 for a multi-channel VCSEL chip in this embodiment. The test system in this embodiment includes a driving device 610, a power detection device 620, an image acquisition device 630, and a processor 640. The driving device 610 is connected to the multi-channel VCSEL chip to be tested, and is used to provide a driving signal to drive all channels of the multi-channel VCSEL chip to be tested to be in a lit state; the power detection device 620 is connected to the multi-channel VCSEL chip to be tested, and is used to obtain the total power of all channels of the multi-channel VCSEL chip to be tested in the lit state; the image acquisition device 630 is used to obtain the near-field image of the multi-channel VCSEL chip to be tested in the lit state; the processor 640 is respectively connected to the driving device 610, the power detection device 620, and the image acquisition device 630, and is used to execute the method for testing the single-channel power of the multi-channel VCSEL chip in any of the above embodiments to obtain the single-channel power of the multi-channel VCSEL chip to be tested according to the total power of all channels and the proportion of the single-channel gray value.

[0116] The driving device in this embodiment can be a nanosecond-level driving device, and the nanosecond-level driving method is adopted to fully drive and light each single channel in the multi-channel VCSEL chip to be measured. This means that the pulse width of the corresponding driving signal is at the nanosecond level, which can ensure that the multi-channel VCSEL chip to be measured reaches a peak power of dozens or even hundreds in an instant, and can ensure that the thermal effect of the multi-channel VCSEL chip to be measured is not too large, enabling all channels of the multi-channel VCSEL chip to be measured to work simultaneously, thus facilitating subsequent total power measurement of all channels and near-field image measurement. For example, for a 48-channel multi-channel VCSEL chip to be measured, the channels in the multi-channel VCSEL chip to be measured are actually driven to work with a driving signal pulse width of 14.62 ns, a modulation period of 15 μs, and a peak current of 2 A. The specific settings can refer to the driving requirements of different multi-channel VCSEL chips to be measured, and are not limited thereto.

[0117] In this embodiment, the total power of all channels is directly measured by the power detection device 620, and the near-field image of the multi-channel VCSEL chip to be measured in the lit state is directly obtained by the processor 640 based on the measured total power of all channels and the image acquisition device 630, which simplifies the test difficulty. All necessary data can be obtained through one measurement, avoiding errors caused by separately measuring each single channel in the multi-channel VCSEL chip to be measured, and improving the measurement efficiency and accuracy. The processor 640 can obtain the single-channel power based on the total power of all channels and the proportion of the single-channel gray value obtained from the near-field image, without separately lighting each single channel in the multi-channel VCSEL chip to be measured for testing, which can significantly improve the test efficiency.

[0118] In one embodiment, continue to refer to the attached Figure 6 , the single-channel power test system 600 of the multi-channel VCSEL chip further includes a pulse width detection device 650. The pulse width detection device 650 is connected to the multi-channel VCSEL chip to be measured and the processor 640, and is used to detect the modulation period corresponding to the multi-channel VCSEL chip to be measured in the lit state.

[0119] In one embodiment, the pulse width detection device includes a photodetector.

[0120] It can be understood that the photodetector in this embodiment is a high-speed detector, which can directly measure the optical pulse waveform to obtain the optical pulse width, and can ensure the measurement efficiency and accuracy.

[0121] In one embodiment, the response speed of the photodetector is greater than or equal to 1 GHz.

[0122] Exemplarily, the response speed of the photodetector can be 1 GHz, 1.1 GHz, 1.2 GHz, 1.3 GHz, 1.4 GHz, 1.5 GHz, 1.6 GHz, 1.7 GHz, 1.8 GHz, 1.9 GHz, 2 GHz, 2.5 GHz, 3 GHz, etc., and is not limited thereto. A response speed greater than or equal to 1 GHz means that the photodetector can quickly convert the optical signal into an electrical signal, achieve accurate measurement of the optical pulse width, and improve the test accuracy and test efficiency.

[0123] In one embodiment, the power detection device includes a power meter or an integrating sphere.

[0124] In this embodiment, in the state where all channels are lit, the total power of all channels of the multi-channel VCSEL chip to be measured is measured using a power meter or an integrating sphere. The power meter or the integrating sphere can quickly respond and provide a high-accuracy power reading to ensure the rapidity and reliability of the test process.

[0125] In one embodiment, the image acquisition device includes a CCD camera.

[0126] Exemplarily, a CCD camera (such as a high-resolution photodetector array) is used to capture the near-field image of the multi-channel VCSEL chip to be measured in the fully lit state in real time. This near-field image can reflect the contribution distribution of the emission intensity of a single channel in the multi-channel VCSEL chip to be measured to the laser pulse, providing necessary data for subsequent image processing.

[0127] Based on the same inventive concept, the embodiments of the present application also provide a single-channel power test device for a multi-channel VCSEL chip for implementing the single-channel power test method of the multi-channel VCSEL chip involved above. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the single-channel power test device for a multi-channel VCSEL chip provided below can refer to the limitations on the single-channel power test method of the multi-channel VCSEL chip in the above text and will not be repeated here.

[0128] In an exemplary embodiment, a computer device is provided. This computer device can be a terminal, and its internal structure diagram can be as Figure 7As shown in the figure. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface, the display unit, and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals in a wired or wireless manner, and the wireless manner can be implemented through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. When the computer program is executed by the processor, it implements a single-channel power test method for a multi-channel VCSEL chip. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer covering the display screen, or a button, a trackball, or a touchpad provided on the computer device housing, or an external keyboard, touchpad, or mouse, etc.

[0129] Those skilled in the art can understand that Figure 7 the structure shown in the figure is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have different component arrangements.

[0130] In an exemplary embodiment, a computer device is provided, including a memory and a processor. A computer program is stored in the memory, and when the processor executes the computer program, the steps in the above method embodiments are implemented.

[0131] In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by the processor, the steps in the above method embodiments are implemented.

[0132] In an embodiment, a computer program product is provided, including a computer program, and when the computer program is executed by the processor, the steps in the above method embodiments are implemented.

[0133] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., without limitation.

[0134] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in the present application.

[0135] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A single-channel power test method for a multi-channel VCSEL chip, characterized in that: The test method includes: Providing a driving signal; the driving signal is used to drive all channels of the multi-channel VCSEL chip to be tested to be in a lighting state; Acquire the full-channel total power and near-field image of the multi-channel VCSEL chip to be tested in a lit state; Acquire the single-channel grayscale value ratio of the multi-channel VCSEL chip to be tested according to the near-field image; and Obtaining the single-channel power of the multi-channel VCSEL chip to be tested according to the total power of all channels and the proportion of the single-channel grayscale value; the single-channel power is the power of each VCSEL unit in the multi-channel VCSEL chip to be tested; Wherein, obtaining the single-channel grayscale value ratio of the multi-channel VCSEL chip to be tested according to the near-field image includes: converting the near-field image into a grayscale image; Acquire the full-channel grayscale value and the single-channel grayscale value of the multi-channel VCSEL chip to be tested according to the grayscale image; The single-channel grayscale value ratio is obtained according to the full-channel grayscale value and the single-channel grayscale value.

2. The single-channel power test method of a multi-channel VCSEL chip according to claim 1, characterized in that: The calculation formula of the single channel power is: ； Among them, Pavg_channel is the single channel power, Pavg_chip is the total power of all channels, and GrayRate is the gray value ratio of the single channel.

3. The single-channel power test method of a multi-channel VCSEL chip according to claim 1, characterized in that: Also includes: Obtaining a duty cycle corresponding to the multi-channel VCSEL chip to be tested in a lit state; The single-channel peak power of the multi-channel VCSEL chip to be tested is acquired according to the single-channel power and the duty cycle.

4. The single-channel power test method of a multi-channel VCSEL chip according to claim 3, characterized in that: The step of obtaining a duty cycle corresponding to the multi-channel VCSEL chip to be tested in a lit state includes: Acquire the optical pulse width corresponding to the multi-channel VCSEL chip to be tested in the lit state and the modulation period of the driving signal; A duty cycle is acquired according to the optical pulse width and the modulation period.

5. The single-channel power test method of a multi-channel VCSEL chip according to claim 4, characterized in that: The calculation formula of the duty cycle is: ； Wherein, Pulse width is the optical pulse width, period is the modulation period, and η is the duty cycle.

6. The single-channel power test method of a multi-channel VCSEL chip according to claim 3, characterized in that: The calculation formula of the single-channel peak power is: ； Wherein, Ppeak is the single-channel peak power; Pavg_channel is the single-channel power; and η is the duty cycle.

7. The single-channel power test method of a multi-channel VCSEL chip according to claim 3, characterized in that: The step of obtaining a duty cycle corresponding to the multi-channel VCSEL chip to be tested in a lit state includes: Acquire the optical signal waveform output by the multi-channel VCSEL chip to be tested in a lit state; The optical signal waveform is analyzed to obtain the duty cycle.

8. The single-channel power test method of a multi-channel VCSEL chip according to any one of claims 1 to 7, characterized in that: Also includes: The single-channel power test method of a multi-channel VCSEL chip according to any one of claims 1 to 7 is repeated multiple times, so as to take the average value of the single-channel power obtained multiple times as the final test result.

9. A single-channel power test system for a multi-channel VCSEL chip, characterized in that: The test system comprises: A driving device, connected to the multi-channel VCSEL chip to be tested, and used to provide a driving signal to drive all channels of the multi-channel VCSEL chip to be tested to be in a lighting state; A power detection device, connected to the multi-channel VCSEL chip to be tested, and used to obtain the total power of all channels of the multi-channel VCSEL chip to be tested in a lit state; An image acquisition device, used to acquire a near-field image of the multi-channel VCSEL chip to be tested in a lit state; and A processor is connected to the driving device, the power detection device and the image acquisition device, respectively, and is used to execute the single-channel power test method of the multi-channel VCSEL chip according to any one of claims 1 to 8, wherein the single-channel power of the multi-channel VCSEL chip to be tested is obtained according to the total power of all channels and the single-channel grayscale value ratio; the single-channel power is the power of each VCSEL unit in the multi-channel VCSEL chip to be tested.

10. The single-channel power test system of a multi-channel VCSEL chip according to claim 9, characterized in that: Also includes: A pulse width detection device is connected to the multi-channel VCSEL chip to be tested and the processor, and is used to detect a modulation period corresponding to the multi-channel VCSEL chip to be tested in the lighting state.

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