Electrostatic chuck and process equipment

Abstract

The present application relates to the technical field of process equipment, and in particular to an electrostatic chuck and process equipment. The electrostatic chuck includes a substrate, a first insulating dielectric layer and a second insulating dielectric layer, wherein the first insulating dielectric layer is disposed on the substrate, and the second insulating dielectric layer is disposed on the side of the first insulating dielectric layer away from the substrate; wherein the first insulating dielectric layer has at least one electrode pair, each electrode pair includes a positive electrode and a negative electrode, and in the projection of the second insulating dielectric layer and the first insulating dielectric layer on the substrate, the projection of the second insulating dielectric layer at least partially overlaps with the projection of an electrode pair; the resistivity of the second insulating dielectric layer is less than the resistivity of the first insulating dielectric layer. The net charge accumulated on the surface of the electrostatic chuck in the present application is released quickly, which can reduce the difficulty of the device to be processed from the chuck surface.

Description

Technical Field

[0001] The present application relates to the technical field of process equipment, and in particular to an electrostatic chuck and process equipment. Background Art

[0002] The electrostatic chuck is used to adsorb and fix the device to be processed during the process. In the specific process, after high voltage is applied to the electrode in the electrostatic chuck, the electrode will induce a net charge, and the device to be processed will induce a net charge with the opposite polarity to the net charge induced by the electrode. The net charge induced by the electrostatic chuck and the net charge induced by the device to be processed attract each other, so that the device to be processed can be adsorbed and fixed on the electrostatic chuck.

[0003] When the electrostatic chuck works for a long time, net charges will accumulate on the surface of the electrostatic chuck, and the net charges are difficult to release, making it difficult for the device to be processed to be detached from the chuck surface. Therefore, an electrostatic chuck that can release the accumulated net charges is urgently needed to reduce the difficulty of detaching the device to be processed from the chuck surface. Summary of the invention

[0004] The present application provides an electrostatic chuck and process equipment, which can increase the release rate of the net charge in the electrostatic chuck.

[0005] In the first aspect, the present application provides an electrostatic chuck, which includes a substrate, a first insulating dielectric layer and a second insulating dielectric layer, wherein the first insulating dielectric layer is disposed on the substrate, and the second insulating dielectric layer is disposed on the side of the first insulating dielectric layer away from the substrate; wherein the first insulating dielectric layer has at least one electrode pair, each electrode pair includes a positive electrode and a negative electrode, and in the projection of the second insulating dielectric layer and the first insulating dielectric layer on the substrate, the projection of the second insulating dielectric layer at least partially overlaps with the projection of one electrode pair; and the resistivity of the second insulating dielectric layer is less than the resistivity of the first insulating dielectric layer. Specifically, when the electrostatic chuck is fixedly adsorbing the device to be processed, positive and negative high voltage electricity is respectively supplied to the two electrodes included in at least one electrode pair, and the electrode supplied with positive high voltage electricity becomes the positive electrode, and the electrode supplied with negative high voltage electricity becomes the negative electrode. The positive electrode generates positive net charge, and the negative electrode generates negative net charge. Moreover, the positive electrode will induce negative net charge in the part of the device to be processed corresponding to the positive electrode, and the negative electrode will induce positive net charge in the part of the device to be processed corresponding to the negative electrode. The positive net charge on the device to be processed can attract the negative net charge in the electrode pair, and the negative net charge on the device to be processed can attract the negative net charge in the electrode pair, so that the device to be processed is fixed on the electrostatic chuck. In the process of adsorbing and fixing the device to be processed, part of the positive net charge generated by the positive electrode will pass through the first insulating dielectric layer to reach the side of the first insulating dielectric layer away from the substrate, and part of the negative net charge generated by the negative electrode will also pass through the first insulating dielectric layer to reach the side of the first insulating dielectric layer away from the substrate, and the second insulating dielectric layer will cover at least part of the positive electrode and the negative electrode, and the resistivity of the second insulating dielectric layer is less than the resistivity of the first insulating dielectric layer. In this way, the positive net charge and the negative net charge moved to the surface of the first insulating dielectric layer can be conducted through the second insulating dielectric layer, so that the positive net charge and the negative net charge accumulated on the surface of the first insulating dielectric layer are neutralized by the second insulating dielectric layer to release the charge accumulated on the surface of the first insulating dielectric layer.

[0006] It is worth mentioning that the ratio of the resistivity of the second insulating dielectric layer to the resistivity of the first insulating dielectric layer is ~ To ensure that the total amount of positive net charge and negative net charge on the surface of the first insulating dielectric layer is significantly reduced.

[0007] In a possible embodiment, when the second insulating dielectric layer is specifically provided, the second insulating dielectric layer may cover a portion of the first insulating dielectric layer that is away from the substrate. In this case, the second insulating dielectric layer corresponds to part or all of an electrode pair. The second insulating dielectric layer may also completely cover the first insulating dielectric layer that is away from the substrate, so that both the positive net charge and the negative net charge accumulated on the surface of the first insulating dielectric layer can be neutralized by the second insulating dielectric layer.

[0008] In a possible embodiment, a plurality of protrusions are further provided on the electrostatic chuck, and the plurality of protrusions are located on a side of the first insulating medium layer facing away from the substrate. The protrusions are used to support the device to be processed so that a gap exists between the device to be processed and the side of the first insulating medium layer facing away from the substrate, so that an air gap is formed between the first insulating medium layer and the device to be processed. The air gap can be used to accommodate particles generated during the process. The air gap can also form a vacuum-insulating medium interface, causing net charge accumulation on the surface of the first insulating medium layer, thereby increasing the adsorption force of the electrostatic chuck.

[0009] The protrusions may be arranged in various forms, such as: when a plurality of protrusions are specifically arranged, the protrusions are arranged on the side of the first insulating dielectric layer away from the substrate, and the sides of the plurality of protrusions away from the first insulating dielectric layer all protrude from the second insulating dielectric layer. In this case, it can be understood that the second insulating dielectric layer and the first insulating dielectric layer are arranged in a stacked manner, one end of the plurality of protrusions is arranged on the side of the first insulating dielectric layer facing the second insulating dielectric layer, and the other ends of the plurality of protrusions pass through the second insulating dielectric layer.

[0010] When multiple protrusions are specifically set, the multiple protrusions can be set between the first insulating medium layer and the second insulating medium layer, and the thickness of the protrusions is greater than the thickness of the second insulating medium layer to ensure that when the device to be processed is adsorbed and fixed on the electrostatic chuck, there is an air gap between the device to be processed and the first insulating medium layer.

[0011] In the above-mentioned embodiment, in order to improve the stability of the device to be processed being adsorbed and fixed on the electrostatic chuck, the sides of the plurality of protrusions facing away from the first insulating medium layer are on the same plane.

[0012] Specifically, the shape of the protrusion can be one or more of a rectangular, conical, wedge-shaped, pyramidal and cylindrical shape, as long as the protrusion can support the device to be processed.

[0013] In the above embodiments, the material of the substrate may be, but is not limited to, aluminum or glass.

[0014] In the second aspect, the present application also provides a process equipment, which includes a process chamber and the electrostatic chuck of any technical solution in the first aspect, and the electrostatic chuck is arranged in the process chamber. After the process equipment with the electrostatic chuck completes processing of the device to be processed, the device to be processed can be quickly detached from the electrostatic chuck to increase the processing speed of the process equipment on the device to be processed.

[0015] In a possible embodiment, the process equipment may further include a DC power supply and a radio frequency power supply, the DC power supply is used to connect to at least one electrode pair, each electrode pair may include two electrodes, and the DC power supply provides positive voltage and negative voltage to the two electrodes respectively, so that the two electrodes in the electrode pair are respectively a positive electrode and a negative electrode. The radio frequency power supply may be connected to the substrate, in which case the material of the substrate may be aluminum, so that the substrate serves as a radio frequency electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A top view of an electrostatic chuck provided in an embodiment of the present application;

[0017] Figure 2 for Figure 1 A side view of an electrostatic chuck is shown;

[0018] Figure 3 A top view of another electrostatic chuck provided in an embodiment of the present application;

[0019] Figure 4 A side view of another electrostatic chuck provided in an embodiment of the present application;

[0020] Figure 5 A top view of another electrostatic chuck provided in an embodiment of the present application;

[0021] Figure 6 for Figure 5 A side view of an electrostatic chuck is shown;

[0022] Figure 7 A top view of another electrostatic chuck provided in an embodiment of the present application;

[0023] Figure 8 for Figure 7 A side view of an electrostatic chuck is shown;

[0024] Fig. 9 A side view of a process equipment provided in an embodiment of the present application.

[0025] Reference numerals:

[0026] 10 - substrate; 20 - first insulating dielectric layer; 30 - second insulating dielectric layer; 40 - positive electrode; 50 - negative electrode; 60 - protrusion; 70 - direct current power supply; 80 - radio frequency power supply; 90 - process chamber. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0028] The electrostatic chuck is used to adsorb and fix the device to be processed during the process. The electrostatic chuck mainly includes a base, an insulating medium arranged on the base, and a high-voltage electrode located in the insulating medium. During the process, the device to be processed is placed on the surface of the electrostatic chuck, and high voltage is applied to the high-voltage electrode. The electrode will induce a net charge, and the device to be processed will also induce a net charge. The net charge in the electrode is opposite to the net charge in the device to be processed. The electrode can attract the device to be processed, so that the device to be processed is adsorbed and fixed on the electrostatic chuck.

[0029] After the electrostatic chuck has been working for a long time, net charges will accumulate on the surface of the electrostatic chuck facing the device to be processed. However, the accumulated net charges are difficult to be released from the surface of the electrostatic chuck facing the device to be processed in time, so that the net charges remain on the surface of the electrostatic chuck. After the high voltage electrode is disconnected from the high voltage, it is difficult for the device to be processed to be detached from the electrostatic chuck due to the adsorption effect of the net charges remaining in the electrostatic chuck.

[0030] Therefore, an embodiment of the present application provides an electrostatic chuck that can increase the release rate of the net charge in the electrostatic chuck, so that the device to be processed can be easily desorbed from the electrostatic chuck.

[0031] The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to be limiting of the present application. As used in the specification and appended claims of the present application, the singular expressions "a", "an", "said", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear contrary indication in the context.

[0032] References to "one embodiment" or "some embodiments" etc. described in this specification mean that a particular feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear at different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0033] Figure 1 A top view of an electrostatic chuck provided in an embodiment of the present application, Figure 2 for Figure 1 A side view of an electrostatic chuck is shown. Figure 1 and Figure 2The electrostatic chuck may include a substrate 10, a first insulating dielectric layer 20, and a second insulating dielectric layer 30. The first insulating dielectric layer 20 and the second insulating dielectric layer 30 may be stacked on the substrate 10, that is, the first insulating dielectric layer is disposed on the substrate, and the second insulating dielectric layer is disposed on the side of the first insulating dielectric layer away from the substrate. The first insulating dielectric layer 20 has at least one electrode pair, each electrode pair includes two electrodes, and the two electrodes are respectively a positive electrode 40 and a negative electrode 50 (that is, the electrode of the two electrodes to which positive high voltage electricity is passed becomes the positive electrode 40, and the electrode to which negative high voltage electricity is passed becomes the negative electrode 50). In the projection of the first insulating dielectric layer 20 and the second insulating dielectric layer 30 on the substrate 10, the projection of the second insulating dielectric layer 30 at least partially overlaps with the projection of an electrode pair, that is, the projection of the second insulating dielectric layer 30 on the substrate 10 at least partially overlaps with the projection of the positive electrode 40 on the substrate 10, and at the same time, the projection of the second insulating dielectric layer 30 on the substrate 10 at least partially overlaps with the projection of the negative electrode 50 on the substrate 10, or the projection of the second insulating dielectric layer 30 on the substrate 10 at least partially overlaps with the projection of the positive electrode 40 or the negative electrode 50 on the substrate 10. When the electrostatic chuck needs to adsorb and fix the device to be processed, positive and negative high voltages are respectively applied to the two electrodes included in at least one electrode pair, and the electrode applied with positive high voltage becomes the positive electrode 40, and the electrode applied with negative high voltage becomes the negative electrode 50. Among them, the positive electrode 40 can generate a positive net charge, and the negative electrode 50 can generate a negative net charge. The positive electrode 40 can induce a negative net charge in the portion of the device to be processed corresponding to the positive electrode 40, and the negative electrode 50 can induce a positive net charge in the portion of the device to be processed corresponding to the negative electrode 50. The positive net charge on the device to be processed can attract the negative net charge in the electrode pair, and the negative net charge on the device to be processed can attract the negative net charge in the electrode pair, and the device to be processed can be adsorbed and fixed on the electrostatic chuck. In the process of adsorbing and fixing the device to be processed, part of the positive net charge generated by the positive electrode 40 will pass through the first insulating dielectric layer 20 to the side of the first insulating dielectric layer 20 away from the substrate 10, and part of the negative net charge generated by the negative electrode 50 will also pass through the first insulating dielectric layer 20 to the side of the first insulating dielectric layer 20 away from the substrate 10, and these positive net charges and negative net charges will flow to the second insulating dielectric layer 30. Since the resistivity of the second insulating dielectric layer 30 is lower than that of the first insulating dielectric layer 20, the positive net charge and the negative net charge moved to the surface of the first insulating dielectric layer 20 can be conducted through the second insulating dielectric layer 30, so that the positive net charge and the negative net charge accumulated on the surface of the first insulating dielectric layer 20 are neutralized through the second insulating dielectric layer 30, thereby releasing the charge accumulated on the surface of the first insulating dielectric layer 20, thereby reducing the difficulty of desorption of the device to be processed from the electrostatic chuck.Among them, the projection of the second insulating dielectric layer 30 on the substrate 10 at least partially overlaps with the projection of the positive electrode 40 on the substrate 10, and at the same time, the projection of the second insulating dielectric layer 30 on the substrate 10 and the projection of the negative electrode 50 on the substrate 10 at least partially overlap, and the projection of the second insulating dielectric layer 30 on the substrate 10 at least partially overlaps with the projection of the positive electrode 40 or the negative electrode 50 on the substrate 10. Therefore, the net charge induced by the positive electrode 40 and / or the negative electrode 50 can quickly reach the second insulating dielectric layer 30 to accelerate the release of the charge accumulated on the surface of the first insulating dielectric layer 20.

[0034] The material of the substrate 10 may be, but is not limited to, aluminum and glass. The resistivity of the first insulating dielectric layer 20 may be greater than or equal to The material of the first insulating dielectric layer 20 can be, but is not limited to, ceramic or glass. In addition, when there are multiple electrode pairs, the multiple electrode pairs can be distributed in concentric circles with the center of the first insulating dielectric layer as the center. When the electrode pairs are powered, the polarities between any two adjacent electrodes are opposite. When high voltage is applied to the electrode pairs, the voltage applied can be, but is not limited to, 3000V. In one embodiment, Figure 1 As shown, the positive electrodes 40 in the plurality of electrode pairs may be connected in series, and the negative electrodes 50 in the plurality of electrode pairs may be connected in series, so as to facilitate electrification of the plurality of electrode pairs.

[0035] When the first insulating dielectric layer 20 and the second insulating dielectric layer 30 are specifically arranged, the first insulating dielectric layer 20 can be, but is not limited to, fixed to one side of the substrate 10 by bonding, and the second insulating dielectric layer 30 can be, but is not limited to, fixed to the side of the first insulating dielectric layer 20 away from the substrate 10 by bonding.

[0036] In order to ensure that the second insulating dielectric layer 30 can neutralize the positive net charge and the negative net charge that move and gather on the surface of the first insulating dielectric layer 20, the ratio of the resistivity of the second insulating dielectric layer 30 to the resistivity of the first insulating dielectric layer 20 can be ~ Such a setting ensures that the positive net charge and the negative net charge on the surface of the first insulating dielectric layer 20 are neutralized, while also allowing the electrostatic chuck to have sufficient adsorption force. When the ratio of the resistivity of the second insulating dielectric layer 30 to the resistivity of the first insulating dielectric layer 20 is greater than When the second insulating dielectric layer 30 is less than 10%, the second insulating dielectric layer 30 cannot effectively eliminate the positive net charge and negative net charge located in the first insulating dielectric layer 20 away from the substrate 10, and the device to be processed is still difficult to be separated from the electrostatic chuck. When the electrostatic chuck is too loose, the adsorption force of the electrostatic chuck will be significantly reduced, and the device to be processed will not be adsorbed well, thus affecting the process.

[0037] Continue to refer to Figure 2 , Figure 3 and Figure 4 , the electrostatic chuck may also be provided with a plurality of protrusions 60, which are located on the side of the first insulating medium layer 20 away from the substrate 10, and the protrusions 60 are used to support the device to be processed. When the device to be processed is adsorbed on the electrostatic chuck, there is a gap between the device to be processed and the surface of the first insulating medium layer 20 away from the substrate 10. The air gap can be regarded as the air gap between the first insulating medium layer 20 and the device to be processed, and the air gap can be used to accommodate particles generated during the process. In addition, the air gap can also form a vacuum-insulating medium interface, causing the net charge on the surface of the first insulating medium layer 20 to accumulate, thereby increasing the adsorption force of the electrostatic chuck.

[0038] When multiple protrusions 60 are specifically provided, the shapes of the protrusions 60 can be various, such as: the shape of the protrusions 60 can be one or more of a rectangle, a cone, a wedge, a pyramid and a column. The shapes of the protrusions 60 provided on the electrostatic chuck can be the same or different. And the sides of the multiple protrusions 60 facing away from the first insulating medium layer 20 are in the same plane.

[0039] In addition, the plurality of protrusions 60 may form a plurality of circumferential support structures, and the plurality of circumferential support structures may be spread toward the edge of the first insulating dielectric layer 20 on the side away from the substrate 10 with the center of the surface of the first insulating dielectric layer 20 away from the substrate 10 as the center point. In each circumferential support structure, the plurality of protrusions 60 are arranged in a circular array with the center of the surface of the first insulating dielectric layer 20 away from the substrate 10.

[0040] Continue to refer to Figure 1 and Figure 2 When the second insulating dielectric layer 30 is specifically provided, the second insulating dielectric layer 30 can completely cover the side of the first insulating dielectric layer 20 away from the substrate 10. At this time, the plurality of protrusions 60 are located between the first insulating dielectric layer 20 and the second insulating dielectric layer 30. When the device to be processed is adsorbed and fixed on the electrostatic chuck, the device to be processed is adsorbed and fixed on the portion of the second insulating dielectric layer 30 corresponding to the plurality of protrusions 60, and there is a gap between the device to be processed and the side of the second insulating dielectric layer 30 away from the substrate 10, and the positive net charge and the negative net charge accumulated on the surface of the first insulating dielectric layer 20 can be neutralized by the second insulating dielectric layer 30.

[0041] Figure 5 Another top view of the electrostatic chuck provided in the embodiment of the present application, Figure 6 for Figure 5 A side view of an electrostatic chuck is shown. Figure 5 and Figure 6Specifically, a second insulating dielectric layer 30 is provided, and the second insulating dielectric layer 30 can completely cover the side of the first insulating dielectric layer 20 away from the substrate 10. The side of the plurality of protrusions 60 away from the first insulating dielectric layer 20 can also pass through the second insulating dielectric layer 30, that is, the second insulating dielectric layer 30 is provided on the portion of the surface of the first insulating dielectric layer 20 away from the substrate 10 where the protrusions 60 are not provided, and the protrusions 60 are used to support the device to be processed. The device to be processed can be adsorbed and fixed on the side of the plurality of protrusions 60 away from the first insulating dielectric layer 20, and there is a gap between the device to be processed and the side of the second insulating dielectric layer 30 away from the substrate 10, and the positive net charge and the negative net charge accumulated on the surface of the first insulating dielectric layer 20 can be neutralized by the second insulating dielectric layer 30.

[0042] Figure 7 Another top view of the electrostatic chuck provided in the embodiment of the present application, Figure 8 for Figure 7 A side view of an electrostatic chuck is shown. Figure 7 and Figure 8 When the second insulating dielectric layer 30 is specifically provided, the second insulating dielectric layer 30 may cover the portion of the first insulating dielectric layer 20 facing away from the substrate 10, that is, the area of ​​the second insulating dielectric layer 30 is smaller than the area of ​​the first insulating dielectric layer 20, and the second insulating dielectric layer 30 corresponds to at least part or all of an electrode pair (corresponding to part or all of a positive electrode 40 and a negative electrode 50). At this time, the side of some of the protrusions 60 facing away from the first insulating dielectric layer 20 may pass through the second insulating dielectric layer 30 to support the device to be processed. At this time, the device to be processed is adsorbed and fixed on the side of the multiple protrusions 60 facing away from the first insulating dielectric layer 20, and there is a gap between the device to be processed and the side of the first insulating dielectric layer 20 and the side of the second insulating dielectric layer 30 facing away from the substrate 10, and part of the positive net charge and part of the negative net charge accumulated on the surface of the first insulating dielectric layer 20 can be neutralized by the second insulating dielectric layer 30.

[0043] In order to ensure that the protrusion 60 can pass through the second insulating dielectric layer 30 and support the device to be processed, the height of the protrusion 60 is greater than the thickness of the second insulating dielectric layer 30 .

[0044] Reference Fig. 9, the embodiment of the present application also provides a process equipment, which can be a process equipment for semiconductor manufacturing. Specifically, the process equipment may include a process chamber 90, a DC power supply 70, a radio frequency power supply 80 and an electrostatic chuck. The electrostatic chuck is arranged in the process chamber 90, the DC power supply 70 is used to connect with at least one electrode pair, and the radio frequency power supply 80 can be connected to the substrate 10. Each electrode pair may include two electrodes, and the DC power supply 70 can provide positive voltage and negative voltage to the two electrodes respectively, so that the two electrodes in the electrode pair are respectively a positive electrode 40 and a negative electrode 50. Specifically, when the process equipment completes the processing of the device to be processed and the DC power supply 70 stops providing voltage to the electrode pair, the net charge accumulated on the surface of the electrostatic chuck can be quickly eliminated, so that the device to be processed can be quickly detached from the electrostatic chuck, thereby improving the processing speed of the process equipment on the device to be processed.

[0045] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An electrostatic chuck, characterized in that: include: substrate; A first insulating dielectric layer, wherein the first insulating dielectric layer is disposed on one side of the substrate, and the first insulating dielectric layer has at least one electrode pair inside, and each of the electrode pairs includes a positive electrode and a negative electrode; a second insulating dielectric layer, the second insulating dielectric layer being disposed on a side of the first insulating dielectric layer away from the substrate, and in projections of the second insulating dielectric layer and the first insulating dielectric layer on the substrate, a projection of the second insulating dielectric layer at least partially overlaps with a projection of one of the electrode pairs; The resistivity of the second insulating dielectric layer is less than the resistivity of the first insulating dielectric layer, and the ratio of the resistivity of the second insulating dielectric layer to the resistivity of the first insulating dielectric layer is ~ The electrostatic chuck further comprises a plurality of protrusions, wherein the protrusions are arranged on a side of the first insulating medium layer away from the substrate, and the thickness of the protrusions is greater than the thickness of the second insulating medium layer.

2. The electrostatic chuck according to claim 1, wherein: The second insulating dielectric layer completely covers a side of the first insulating dielectric layer facing away from the substrate.

3. The electrostatic chuck according to claim 1, wherein: The sides of the plurality of protrusions facing away from the first insulating dielectric layer all protrude from the second insulating dielectric layer.

4. The electrostatic chuck according to claim 1, wherein: The protrusion is arranged between the first insulating medium layer and the second insulating medium layer.

5. The electrostatic chuck according to claim 3, characterized in that The sides of the plurality of protrusions facing away from the first insulating medium layer are on the same plane.

6. The electrostatic chuck according to claim 5, characterized in that The protrusion is in one or more of a rectangular, conical, wedge-shaped, pyramidal and cylindrical shape.

7. The electrostatic chuck according to claim 1, wherein: The substrate is made of aluminum or glass.

8. A process equipment, characterized in that: The invention comprises a process chamber and an electrostatic chuck as claimed in any one of claims 1 to 7 arranged in the process chamber.

9. The process equipment according to claim 8, characterized in that: It also includes a direct current power supply and a radio frequency power supply, wherein the direct current power supply is connected to the at least one electrode pair, and the radio frequency power supply is connected to the substrate.

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