Holographic leaky-wave antenna and electronic device
By using a multi-point feeding and independent switching unit design for the holographic leaky wave antenna, the limitations of existing holographic antennas in beamforming and spatial scanning are solved, achieving flexible radiation control and anti-echo interference capability, and making it suitable for various polarization methods and scenarios.
Patent Information
- Application Number
- CN202380008517.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-03-31
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2043-03-31
AI Technical Summary
Existing holographic antennas have limitations in beamforming and two-dimensional spatial beam scanning, making it difficult to achieve flexible radiation control and lacking sufficient anti-echo interference capabilities.
A holographic leaky wave antenna was designed, which adopts a multi-point feeding structure and independently controlled switching unit. Combined with switching technology such as liquid crystal or PIN diode, the slit opening is dynamically controlled through a holographic algorithm, enabling multiple polarization modes and beam scanning.
It achieves more flexible radiation control, improves the antenna's anti-echo interference capability, enhances the flexibility and multi-polarization characteristics of beam scanning, and is suitable for a variety of application scenarios.
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Figure CN119072826B_ABST
Abstract
Description
Technical Field
[0001] This disclosure belongs to the field of communication technology, specifically relating to a holographic leaky wave antenna and electronic device. Background Technology
[0002] A liquid crystal holographic electrically controlled scanning array antenna is a low-profile, low-cost beamforming antenna achieved by applying holographic control theory to liquid crystal electrically controlled scanning antennas. Holography is a technique that uses the principles of wave interference and diffraction to record the amplitude and phase information of an object and reconstruct its three-dimensional image. A holographic antenna is an application of holographic technology in microwave engineering. This type of antenna can obtain the desired radiated electromagnetic wave by recording and recovering the interference field between a reference electromagnetic wave and the expected radiated electromagnetic wave. A holographic antenna typically has two parts: a feed structure and a holographic structure. The feed structure transmits a reference wave that can interfere with the expected radiated electromagnetic wave, while the holographic structure records the distribution of the interference field. When a holographic antenna is working, the reference electromagnetic wave and the expected radiated electromagnetic wave first form an interference field on a certain plane. Then, the holographic structure records the distribution of the interference field. Finally, the reference electromagnetic wave excites the holographic structure recording the interference field distribution, thereby recovering the radiated electromagnetic wave. Given that the antenna element has adjustable electromagnetic wave characteristics, the liquid crystal holographic electronically controlled scanning antenna can dynamically record various interference field distributions, thereby recovering the radiated electromagnetic waves and achieving beamforming characteristics. Summary of the Invention
[0003] The present invention aims to solve at least one of the technical problems existing in the prior art, and to provide a holographic leaky wave antenna and electronic device.
[0004] In a first aspect, embodiments of this disclosure provide a holographic leaky-wave antenna, comprising a first waveguide structure, a first dielectric substrate, a radiating layer, a first reference electrode layer, and a plurality of switching units; the first dielectric substrate is disposed on the first waveguide structure and has a first gap with the first waveguide structure, the first reference electrode layer is disposed on the side of the first waveguide structure opposite to the first dielectric substrate; the radiating layer is disposed on the side of the first dielectric substrate opposite to the first waveguide structure, and the radiating layer has a plurality of slit openings; wherein...
[0005] The first waveguide is configured with at least one feed port, and the feed port does not overlap with the orthographic projection of the first reference electrode layer on the first dielectric substrate; the switching unit is configured to correspond one-to-one with the slit opening, and the switching unit is configured to independently control the switching state of the corresponding slit opening.
[0006] The switching unit includes a second dielectric substrate disposed opposite to the first dielectric substrate, an adjustable dielectric layer located between the second dielectric substrate and the radiating layer, and a patch electrode located on the side of the second dielectric substrate near the adjustable dielectric layer, wherein the patch electrode at least partially overlaps with the orthographic projection of the slit opening on the second dielectric substrate.
[0007] The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and the slit openings in each first slit opening group are arranged side by side along a first direction; the plurality of switching units constitute a plurality of first switching unit groups arranged side by side along a second direction, and the switching units in each first switching unit group are arranged side by side along a first direction.
[0008] A first region is defined between the surface mount electrodes of the adjacent first switch unit groups. A set of first bias voltage lines located on the second dielectric substrate is provided in one of the first regions. Each of the first bias voltage lines in the set of first bias voltage lines is connected to a surface mount electrode of one of the first switch unit groups.
[0009] The second dielectric substrate is further provided with a plurality of first connection pads, and a first bias voltage line is connected to a first connection pad through a first fan-out trace.
[0010] The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and a plurality of second slit opening groups arranged side by side along a first direction. The slit openings in each first slit opening group are arranged side by side along the first direction, and the slit openings in each second slit opening group are arranged side by side along the second direction. The plurality of switching units constitute a plurality of first switching unit groups arranged side by side along a second direction, and a plurality of second switching unit groups arranged side by side along the first direction. The switching units in each first switching unit group are arranged side by side along the first direction, and the switching units in each second switching unit group are arranged side by side along the second direction.
[0011] The switching unit further includes a switching transistor located on the second dielectric substrate; the second electrode of the switching transistor in each switching unit is connected to the patch electrode, the control electrode of each switching transistor in the same first switching unit group is connected to the same control signal line, and the first electrode of each switching transistor in the same second switching unit group is connected to the same first bias voltage line.
[0012] The second dielectric substrate is further provided with a plurality of first connection pads and a plurality of second connection pads. A first bias voltage line is connected to a first connection pad through a first fan-out trace, and a control signal line is connected to a second connection pad through a second fan-out trace.
[0013] The switching unit includes a PIN diode, which is disposed on the first dielectric substrate and corresponds to the position of the slit opening.
[0014] The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and the slit openings in each first slit opening group are arranged side by side along a first direction; the plurality of switching units constitute a plurality of switching unit groups arranged side by side along a second direction, and the switching units in each first switching unit group are arranged side by side along a first direction.
[0015] A first region is defined between the surface mount electrodes of the adjacent first switch unit groups. A set of first bias voltage lines located on the second dielectric substrate is provided in one of the first regions. Each of the first bias voltage lines in the set of first bias voltage lines is connected to a first electrode of the PIN diode of one of the first switch unit groups.
[0016] The second electrode of the PIN diode in one of the first switching unit groups is connected to a reference electrode line, and each of the reference voltage lines is connected via a signal lead.
[0017] The first dielectric substrate is further provided with a plurality of first connection pads and third connection pads. A first bias voltage line is connected to a first connection pad through a first fan-out trace, and the signal lead is connected to the third connection pad.
[0018] The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and a plurality of second slit opening groups arranged side by side along a first direction. The slit openings in each first slit opening group are arranged side by side along the first direction, and the slit openings in each second slit opening group are arranged side by side along the second direction. The plurality of switching units constitute a plurality of switching unit groups arranged side by side along a second direction, and a plurality of second switching unit groups arranged side by side along a first direction. The switching units in each first switching unit group are arranged side by side along the first direction, and the switching units in each second switching unit group are arranged side by side along the second direction.
[0019] The switching unit further includes a switching transistor located on the second dielectric substrate; the second electrode of the switching transistor in each switching unit is connected to the first electrode of the PIN diode, the control electrode of each switching transistor in the same first switching unit group is connected to the same control signal line, and the first electrode of each switching transistor in the same second switching unit group is connected to the same first bias voltage line; the second electrode of the PIN diode in one first switching unit group is connected to a reference electrode line, and each reference voltage line is connected through a signal lead.
[0020] The second dielectric substrate is further provided with a plurality of first connection pads, a plurality of second connection pads and a third connection pad. A first bias voltage line is connected to a first connection pad through a first fan-out trace. A control signal line is connected to a second connection pad through a second fan-out trace. The signal lead is connected to the third connection pad.
[0021] The width at both ends of the slit opening is not less than the width in the middle.
[0022] The holographic leaky antenna also includes a feeding structure configured to excite microwave signals through the plurality of feeding ports.
[0023] The power supply structure includes multiple coaxial probes, with one coaxial probe installed at one of the power supply ports.
[0024] The power supply structure further includes a Butler network matrix board electrically connected to the coaxial probe.
[0025] The power supply ports are four in number, namely a first power supply port, a second power supply port, a third power supply port, and a fourth power supply port. The line connecting the center of the first power supply port and the center of the second power supply port is a first line segment; the line connecting the center of the third power supply port and the center of the fourth power supply port is a second line segment; the first line segment and the second line segment are perpendicular.
[0026] The centers of the first feed port, the second feed port, the third feed port, and the fourth feed port are all equidistant from the center of the first waveguide structure, and all are at the first distance.
[0027] The first distance is 3 to 8 mm.
[0028] The peripheral area of the first waveguide structure is provided with a wave-absorbing material.
[0029] The radiation layer includes at least two slit openings with different extension directions.
[0030] It also includes a second waveguide structure disposed on the side of the radiation layer near the first waveguide structure, and a second reference electrode layer disposed on the side of the second waveguide structure near the first waveguide structure.
[0031] The holographic leaky wave antenna also includes an absorbing load disposed in the second waveguide structure.
[0032] Secondly, embodiments of this disclosure provide an electronic device that includes the holographic leaky antenna described in any of the preceding claims. Attached Figure Description
[0033] Figure 1 This is a top view of a holographic leaky antenna according to an embodiment of this disclosure.
[0034] Figure 2 This is a cross-sectional view of a holographic leaky wave antenna according to an embodiment of the present disclosure.
[0035] Figure 3 This is a top view of a four-point fed holographic leaky wave antenna according to an embodiment of the present disclosure.
[0036] Figure 4 This is a top view of another four-point fed holographic leaky wave antenna according to an embodiment of this disclosure.
[0037] Figure 5 for Figure 4 The holographic leaky wave antenna realizes the ideal topology of left-hand circular polarization.
[0038] Figure 6 for Figure 4 The holographic leaky wave antenna realizes the ideal topology of right-hand circular polarization.
[0039] Figure 7 This is a schematic diagram showing the correspondence between a switching unit and a slit opening in a holographic leaky wave antenna according to an embodiment of this disclosure.
[0040] Figure 8 This is a schematic diagram showing the correspondence between another switching unit and the slot opening of a holographic leaky wave antenna according to an embodiment of this disclosure.
[0041] Figure 9 This is a schematic diagram showing the correspondence between another switching unit and slit opening of a holographic leaky wave antenna according to an embodiment of this disclosure.
[0042] Figure 10 This is a wiring diagram of a first example of a holographic leaky antenna according to an embodiment of the present disclosure.
[0043] Figure 11 This is a wiring diagram of a second example of a holographic leaky antenna according to an embodiment of this disclosure.
[0044] Figure 12 This is a wiring diagram of a third example of a holographic leaky antenna according to an embodiment of this disclosure.
[0045] Figure 13 This is a wiring diagram of a fourth example of a holographic leaky antenna according to an embodiment of this disclosure.
[0046] Figure 14 This is a schematic diagram of the slit opening of a holographic leaky wave antenna according to an embodiment of this disclosure.
[0047] Figure 15 The radiation pattern of the holographic leaky antenna in this embodiment of the present disclosure is shown when the azimuth angle Phi is 0° and the elevation angle Theta is ±45°, ±30°, ±15°, and 0°.
[0048] Figure 16 The S11 curves for the holographic leaky antenna of this embodiment are shown when the azimuth angle Phi is 0° and the elevation angle Theta is ±45°, ±30°, ±15°, and 0°, respectively.
[0049] Figure 17 The radiation patterns of the holographic leaky antenna in this embodiment of the present disclosure are as follows: the azimuth angle Phi is 90°, and the elevation angles Theta are ±45°, ±30°, ±15°, and 0°.
[0050] Figure 18 The S11 curves for the holographic leaky antenna of this embodiment are shown when the azimuth angle Phi is 90° and the elevation angle Theta is ±45°, ±30°, ±15°, and 0°, respectively.
[0051] Figure 19 This is a schematic diagram of the Butler network matrix board of the holographic leaky wave antenna according to an embodiment of the present disclosure.
[0052] Figure 20 for Figure 19 The holographic leaky beam pattern is simulated with normalized radiation pattern of sum and difference beams when the azimuth angle Phi is 0° and the elevation angle Theta is 0°.
[0053] Figure 21 This is a top view of another holographic leaky antenna according to an embodiment of this disclosure.
[0054] Figure 22 This is a cross-sectional view of another holographic leaky wave antenna according to an embodiment of this disclosure. Detailed Implementation
[0055] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0056] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.
[0057] Firstly, Figure 1 This is a top view of a holographic leaky antenna according to an embodiment of this disclosure; Figure 2 This is a cross-sectional view of a holographic leaky wave antenna according to an embodiment of this disclosure; as shown... Figure 1 and 2 As shown, this embodiment of the present disclosure provides a holographic leaky wave antenna, which includes a first waveguide structure 20, a first dielectric substrate 10, a radiating layer 30, a first reference electrode layer 60, and a plurality of switching units 50. The first reference electrode layer 60 is disposed on the side of the first waveguide structure 20 opposite to the first dielectric substrate 10; the first dielectric substrate 10 is disposed on the first waveguide structure 20 and has a first gap with the first waveguide structure 20; the radiating layer is disposed on the side of the first dielectric substrate 10 opposite to the first waveguide structure 20, and the radiating layer 30 has a plurality of slit openings 31. The switching units 50 are configured to correspond one-to-one with the slit openings 31 on the radiating layer 30, and the switching units 50 are configured to independently control the switching state of the corresponding slit openings 31. That is, the switching units 50 can control whether the slit openings 31 on the radiating layer 30 can radiate the electromagnetic waves transmitted by the first waveguide structure 20. The holographic antenna of this embodiment of the present disclosure is configured with at least one feed port, and the feed port does not overlap with the orthographic projection of the first reference electrode layer 60 on the first dielectric substrate 10. It should be understood that the holographic leaky antenna of this disclosure includes not only the above-described structure, but also a feeding structure configured to feed electromagnetic waves into the feeding port of the first waveguide structure 20. The feeding structure includes, but is not limited to, the probe 40. In this disclosure embodiment, the feeding structure includes at least a coaxial probe 40 as an example.
[0058] In the holographic leaky wave antenna of this embodiment, since the switching unit 50 corresponding to the slit opening 31 of the radiating layer 30 is controlled separately, the holographic antenna in this embodiment can obtain the holographic topology structure according to the holographic algorithm. In this way, the holographic topology array can be reproduced by controlling the switching state of each switching unit 50, and the target beam can be obtained, thereby realizing the spatial two-dimensional beam scanning characteristics.
[0059] In some examples, the first waveguide structure 20 of this disclosure embodiment is provided with multiple feed ports, and each feed port does not overlap with the orthographic projection of the first reference electrode layer 60 on the first dielectric substrate 10. That is, this disclosure embodiment uses a multi-point feed line. Compared with a single-point feed, multi-point feeding can achieve better radiation without absorbing materials and has better resistance to echo interference.
[0060] It should be noted that, Figure 3 This is a top view of a four-point fed holographic leaky-wave antenna according to an embodiment of this disclosure; as shown... Figure 3 As shown, in the following examples of this disclosure, the holographic leaky antenna is configured with four feed ports, that is, it operates in a four-point feeding mode. For ease of description, the four feed ports are referred to as the first feed port 41, the second feed port 42, the third feed port 43, and the fourth feed port 44, respectively. However, the holographic leaky antenna in this embodiment is not limited to four-point feeding. Any integer that is divisible by 360 and is greater than 1 can be used as the number of feed points in this embodiment. For example, three-point feeding, six-point feeding, etc. can also be used. In this embodiment, four-point feeding is used, which allows for more flexible control of the holographic leaky antenna. By exciting the probe 40 with different amplitudes and phases, a variety of different antenna radiation patterns can often be obtained, making the antenna more flexible in different scenarios. For example, the holographic leaky antenna in this embodiment achieves a central concave radiation pattern with equal amplitude 90° phase difference feeding; another example is that equal amplitude 90° phase difference feeding with four points can obtain a central concave radiation pattern.
[0061] Furthermore, refer to Figure 1The holographic leaky wave antenna is an X-direction linearly polarized antenna. The line connecting the center of the first feed port 41 and the center of the second feed port 42 is a first line segment; the line connecting the center of the third feed port 43 and the center of the fourth feed port 44 is a second line segment. The first and second line segments are perpendicular. The centers of the first feed port 41, the second feed port 42, the third feed port 43, and the fourth feed port 44 are all equidistant from the center of the first waveguide structure 20, and all are at a first distance. The first distance is 3-8 mm. In some examples, the first waveguide structure 20 of this embodiment includes a slow-wave dielectric layer. For example, the first waveguide structure 20 includes a waveguide cavity, in which a low-loss polymer material can be filled as a slow-wave dielectric layer to achieve the effect of a slow-wave waveguide.
[0062] Furthermore, the first gap between the first waveguide structure 20 and the first dielectric substrate 10 can be an air gap. That is, there is an air gap between the first dielectric substrate 10 and the slow-wave dielectric layer. To create this air gap, a support component can be provided between the first dielectric substrate 10 and the slow-wave dielectric layer, with both ends of the support component abutting against the first dielectric substrate 10 and the slow-wave dielectric layer, respectively. In some examples, the support component can be a nylon pillar, etc.
[0063] In some examples, the extension directions of the slit openings 31 in the radiating layer 30 are the same. It should be noted that the extension direction of the slit opening 31 refers to the direction of the long side of its orthographic projection onto the first dielectric substrate 10. For example, if all slit openings 31 extend along the first direction Y, the switching state of each slit opening 31 can be controlled by the control switching unit 50 to realize a second-direction X-polarized antenna. As another example, if all slit openings 31 extend along the second direction X, the switching state of each slit opening 31 can be controlled by the control switching unit 50 to realize a first-direction Y-polarized antenna. It should be noted that in this embodiment, the first direction Y and the second direction X are taken as two mutually perpendicular directions; for example, the first direction Y is horizontal, and the second direction X is vertical.
[0064] In some examples, Figure 4 This is a top view of another four-point fed holographic leaky-wave antenna according to an embodiment of this disclosure; as shown Figure 4As shown, the radiating layer 30 includes slit openings 31 with at least two extending directions. For example, the radiating layer 30 includes slit openings 31 with two extending directions: a slit opening 31 extending along a first direction Y and a slit opening 31 extending along a second direction X. In this case, the switching unit 50 corresponding to the slit opening 31 extending along the second direction X is controlled so that all slit openings 31 extending along the second direction X are in the off state. Then, using a holographic algorithm, the switching unit 50 corresponding to the slit opening 31 extending along the first direction Y is controlled to control the on / off state of the slit opening 31 extending along the first direction Y, thus realizing a second-direction X-polarized antenna. Similarly, the switching unit 50 corresponding to the slit opening 31 extending along the first direction Y is controlled so that all slit openings 31 extending along the first direction Y are in the off state. Then, using a holographic algorithm, the switching unit 50 corresponding to the slit opening 31 extending along the second direction X is controlled to control the on / off state of the slit opening 31 extending along the second direction X, thus realizing a first-direction Y-polarized antenna. Of course, the slit pair (a slit pair consisting of a slit opening 31 extending along the first direction Y and a slit opening 31 extending along the second direction X) can also be selected according to the holographic topology. By controlling the switching state of the slit pair, left-hand circular polarization or right-hand circular polarization can be achieved, as shown in the reference. Figure 5 and 6 , Figure 5 for Figure 4 A holographic leaky wave antenna realizes a left-hand circularly polarized ideal topology; Figure 6 for Figure 4 The holographic leaky wave antenna realizes the ideal topology of right-hand circular polarization.
[0065] like Figure 4 As shown, only slit openings 31 in the radiation layer 30 are shown, including slit openings 31 extending along the first direction Y and the second direction X, and these slit openings 31 extending along the first direction Y and the second direction X are alternately arranged along the first direction Y. Of course, the extension direction of the slit openings 31 is not limited to the first direction Y and the second direction X, and the radiation layer 30 is not limited to including slit openings 31 with two extension directions. The slit openings 31 can also be arranged by rotation or by deflection at a certain angle, which will not be listed here.
[0066] In some examples, the slit opening 31 is not provided in the middle of the radiation layer 30. This is done to avoid exciting higher-order modes.
[0067] In some examples, Figure 7 This is a schematic diagram showing the correspondence between a switching unit 50 and a slit opening 31 in a holographic leaky wave antenna according to an embodiment of this disclosure; as shown... Figure 7As shown, the switching unit 50 in this embodiment can be a PIN diode or a variable reactance diode (Varactor). In this case, the PIN diode or the Varactor can be integrated with the slit opening 31 to achieve dual-value or continuous amplitude control capability. For example, taking the PIN diode as an example, the bias voltage input to the PIN diode is controlled to control the forward / reverse bias of the PIN diode. When the slit opening 31 needs to be in the open state, the bias voltage input to the PIN diode is greater than its conduction threshold, and the PIN diode conducts; when the slit opening 31 needs to be in the closed state, the bias voltage input to the PIN diode is less than its conduction threshold, and the PIN diode is turned off.
[0068] In some examples, Figure 8 This is a schematic diagram showing the correspondence between another switching unit 50 and the slit opening 31 of the holographic leaky wave antenna according to an embodiment of this disclosure; as shown Figure 8 As shown, the switching unit 50 is a liquid crystal switch, that is, a second dielectric substrate 51 is disposed opposite to the first dielectric substrate 10, and a patch electrode 52 is disposed on the second dielectric substrate 51. An adjustable dielectric layer, such as a liquid crystal layer 53, is disposed between the layer containing the patch electrode 52 and the radiating layer 30 on the second dielectric substrate 51. By changing the voltage applied to the patch electrode 52, the deflection angle of the liquid crystal molecules in the liquid crystal layer 53 is changed, thereby achieving continuous control of the amplitude of the radio frequency signal radiated from the slit opening 31.
[0069] In some examples, Figure 9 This is a schematic diagram showing the correspondence between the switching unit 50 and the slit opening 31 of another embodiment of the holographic leaky wave antenna of this disclosure; as shown Figure 9 As shown, the switching unit 50 is a MEMS switch. For example, a second dielectric substrate 51 is disposed opposite to the first dielectric substrate 10. The second dielectric substrate 51 is a flexible substrate, and patch electrodes 52 are disposed on the second dielectric substrate 51, with each patch electrode 52 corresponding to a slit opening 31. By applying a voltage to the patch electrodes 52, the distance between the patch electrodes 52 and the slit opening 31 is adjusted under the action of an electric field, thereby continuously controlling the radiation amplitude of the radio frequency signal. The holographic antenna in this embodiment will be described using only a liquid crystal switch and a PIN diode as an example.
[0070] First example: In this example, the switching unit 50 uses a liquid crystal switch. Figure 10 This is a wiring diagram of a first example of a holographic leaky antenna according to an embodiment of this disclosure; see reference. Figure 10The slit openings 31 on the radiating layer 30 are divided into multiple groups of first slit openings 31 arranged side-by-side along the second direction X, and the first slit openings 31 within each group of first slit openings 31 are arranged side-by-side along the first direction Y. Correspondingly, the liquid crystal switches of the switching units 50 are divided into groups of first switching units 50 arranged side-by-side along the second direction X, and the liquid crystal switches of the switching units 50 within each group of first switching units 50 are arranged side-by-side along the first direction Y. A first region is defined between adjacent groups of first slit openings 31, and a set of first bias voltage lines 101 located on the second dielectric substrate 51 is provided within each first region. The set of first bias voltage lines 101 is electrically connected to the surface mount electrodes 52 of each liquid crystal switch within a group of first switching units 50. This arrangement not only enables individual control of each liquid crystal switch but also facilitates wiring.
[0071] Furthermore, the first bias voltage line 101 can be disposed on the layer where the patch electrode 52 is located, close to the second dielectric substrate 51. Therefore, the material of the first bias voltage line 101 can be indium tin oxide (ITO). Of course, the material of the first bias voltage line 101 can also be a metallic material.
[0072] In some examples, a plurality of first connection pads 201 are also provided on the second dielectric substrate 51. Each first connection pad 201 corresponds to a first bias voltage line 101, and the first bias voltage line 101 can be electrically connected to the first connection pad 201 through a first fan-out trace 301. In this way, the driver chip is bonded to the first connection pad 201, and the signal can be applied to the first bias voltage line 101.
[0073] The second example: A plurality of slit openings 31 constitute a plurality of first slit openings 31 arranged side by side along the second direction X, and a plurality of second slit openings 31 arranged side by side along the first direction Y. The slit openings 31 in each first slit opening 31 group are arranged side by side along the first direction Y, and the slit openings 31 in each second slit opening 31 group are arranged side by side along the second direction X; a plurality of switching units 50 constitute a plurality of first switching units 50 arranged side by side along the second direction X, and a plurality of second switching units 50 arranged side by side along the first direction Y. The switching units 50 in each first switching unit 50 group are arranged side by side along the first direction Y, and the switching units 50 in each second switching unit 50 group are arranged side by side along the second direction X.
[0074] Figure 11 This is a wiring diagram of a second example of a holographic leaky antenna according to an embodiment of this disclosure; as shown Figure 11As shown, in this example, the switching unit 50 is the same as in the first example, including a liquid crystal switch, but a switching transistor T1 is also provided in this switching unit 50. The second electrode of the switching transistor T1 is electrically connected to the surface mount electrode 52 of the liquid crystal switch. The control electrodes of each switching transistor T1 in the same first switching unit 50 group are connected to the same control signal line 102, and the first electrodes of each switching transistor T1 in the same second switching unit 50 group are connected to the same first bias voltage line 101. By controlling the switching state of the switching transistor T1, the first bias voltage 51 written to the surface mount electrode 52 in each switching unit 50 can be controlled, that is, the switching state of each switching unit 50 can be controlled. In this example, only one control signal line 102 is needed to control one first switching unit 50 group, and only one first bias voltage 51 is needed to provide the first bias voltage 51 for one second switching unit 50 group, thus greatly reducing wiring. Furthermore, the switching transistor T1 is disposed on the second dielectric substrate 51. At this time, the first bias signal line and the patch electrode 52 can be disposed on the same layer as the first and second electrodes of the switching transistor T1, and the control signal line 102 can be disposed on the same layer as the control electrode of the switching transistor T1. This helps to make the antenna thinner and lighter.
[0075] In some examples, the second dielectric substrate 51 is further provided with a plurality of first connection pads 201 and a plurality of second connection pads 202. A first bias voltage line 101 is connected to a first connection pad 201 via a first fan-out trace 301, and a control signal line 102 is connected to a second connection pad 202 via a second fan-out trace 302. In this way, the driver chip can be bonded to the first connection pads 201 and the second connection pads 202 to provide a first bias voltage 51 to the first bias voltage line 101 and a control signal to the control signal line 102, respectively.
[0076] The third example: In this example, the switching unit 50 uses a PIN diode, which is integrated into the first dielectric substrate 10 at the position corresponding to the slit opening 31. Figure 12 This is a wiring diagram of a third example of a holographic leaky antenna according to an embodiment of this disclosure; see reference. Figure 12The slit openings 31 on the radiating layer 30 are divided into multiple groups of first slit openings 31 arranged side-by-side along the second direction X, and the first slit openings 31 within each group of first slit openings 31 are arranged side-by-side along the first direction Y. Correspondingly, the PIN diodes are divided into groups of first switching units 50 arranged side-by-side along the second direction X, and the PIN diodes within each group of first switching units 50 are arranged side-by-side along the first direction Y. A first region is defined between adjacent groups of first slit openings 31. A set of first bias voltage lines 101 located on the second dielectric substrate 51 is provided within each first region. Each set of first bias voltage lines 101 is electrically connected to the first electrode of each PIN diode within a group of first switching units 50. A reference voltage line 103 is also provided within each first region. The second electrode of each PIN diode in a group of first switching units 50 is connected to a reference voltage line, and each reference voltage line 103 is connected via a signal lead 303. This arrangement not only enables individual control of each PIN diode but also facilitates wiring.
[0077] Furthermore, the first dielectric substrate 10 is also provided with a plurality of first connection pads 201 and third connection pads 203. A first bias voltage line 101 is connected to a first connection pad 201 via a first fan-out trace 301, and a signal lead 303 is connected to the third connection pad 203. In this way, the driver chip can be bonded to the first connection pads 201 and the third connection pads 203 to provide a first bias voltage 51 to the first bias voltage line 101 and a reference voltage signal to the reference voltage line 103. It should be noted that the signal loaded on the reference voltage line 103 can be a ground signal.
[0078] The fourth example: A plurality of slit openings 31 constitute a plurality of first slit openings 31 arranged side by side along the second direction X, and a plurality of second slit openings 31 arranged side by side along the first direction Y. The slit openings 31 in each first slit opening 31 group are arranged side by side along the first direction Y, and the slit openings 31 in each second slit opening 31 group are arranged side by side along the second direction X; a plurality of switching units 50 constitute a plurality of first switching units 50 arranged side by side along the second direction X, and a plurality of second switching units 50 arranged side by side along the first direction Y. The switching units 50 in each first switching unit 50 group are arranged side by side along the first direction Y, and the switching units 50 in each second switching unit 50 group are arranged side by side along the second direction X.
[0079] Figure 13 This is a wiring diagram of a fourth example of a holographic leaky antenna according to embodiments of this disclosure; as shown Figure 13As shown, in this example, the switching unit 50 is the same as in the first example, including a PIN diode, but a switching transistor T1 is also provided in this switching unit 50. The second electrode of the switching transistor T1 in each switching unit 50 is connected to the first electrode of the PIN diode. The control electrodes of the switching transistors T1 in the same first switching unit 50 group are connected to the same control signal line 102, and the first electrodes of the switching transistors T1 in the same second switching unit 50 group are connected to the same first bias voltage line 101. The second electrode of the PIN diode in one first switching unit 50 group is connected to a reference electrode line, and each reference voltage line 103 is connected through a signal lead 303. In this case, by controlling the switching state of the switching transistor T1, the first bias voltage 51 written to the first electrode of the PIN diode in each switching unit 50 can be controlled, that is, the switching state of each switching unit 50 can be controlled. In this example, only one control signal line 102 is needed to control one first switching unit 50 group, and only one first bias voltage 51 is needed to provide the first bias voltage 51 for one second switching unit 50 group, thus greatly reducing wiring.
[0080] Furthermore, the second dielectric substrate 51 is also provided with a plurality of first connection pads 201, a plurality of second connection pads 202, and a third connection pad 203. A first bias voltage line 101 is connected to a first connection pad 201 via a first fan-out trace 301, a control signal line 102 is connected to a second connection pad 202 via a second fan-out trace 302, and a signal lead 303 is connected to the third connection pad 203. In this way, the driver chip can be bonded to the first connection pads 201, second connection pads 202, and third connection pads 203 to provide a first bias voltage 51 to the first bias voltage line 101, a control signal to the control signal line 102, and a reference voltage signal to the reference voltage line 103. It should be noted that the signal loaded on the reference voltage line 103 can be a ground signal.
[0081] To better illustrate the effect of the holographic leaky antenna in this embodiment, the following test only uses a liquid crystal switch as an example to demonstrate the effectiveness of the holographic leaky antenna. The specific test results are as follows. (Refer to...) Figure 1The holographic leaky wave antenna is an X-direction linearly polarized antenna, fed by a single probe 40. To ensure single-mode transmission in the first waveguide structure 20, the height of the first waveguide structure 20 must be less than 1 / 2λg, where λg is the wavelength of the first waveguide structure 20. The first gap between the first dielectric substrate 10 and the first waveguide structure 20 is an air gap with a thickness of 1.2 mm. Both the first dielectric substrate 10 and the second dielectric substrate 51 are made of glass with a thickness of 0.5 mm. The slow-wave dielectric layer of the first waveguide structure 20 is a PTFE plate with a thickness of 2.5 mm. The thickness of the liquid crystal layer 53 can be 0.001-0.1 mm, specifically 0.008 mm. The ε of the liquid crystal molecules... || The value is 3.5821, ε ⊥ The value is 2.4527. The thickness of both the radiating layer 30 and the patch electrode 52 is 0.002 mm. Among them, Figure 14 This is a schematic diagram of the slit opening 31 of the holographic leaky wave antenna according to an embodiment of this disclosure; as shown Figure 14 As shown, the width of the middle region of the slit opening 31 is no greater than the width of both ends; that is, it is wider in the middle and narrower at both ends, gradually narrowing to the width of the middle region. Regarding the specific dimensions of the slit opening 31, the length of both ends is 2.1 mm, the maximum width is 0.31 mm, and the length and width of the middle region are both 0.2 mm. The patch electrode 52 has a width of 0.5 mm and a length of 0.35 mm. Absorbing material is attached to all four sides of the groove in the first waveguide structure 20 to prevent unradiated energy from interfering with the radially fed wave and to reduce its impact on the holographic interference array reconstruction.
[0082] Reference Figure 15-18 , Figure 15 The radiation pattern is shown when the operating frequency is 12 GHz, the antenna azimuth angle Phi is 0°, and the elevation angles Theta are ±45°, ±30°, ±15°, and 0°. The S11 curve is shown when the antenna azimuth angle Phi is 0° and the elevation angles Theta are ±45°, ±30°, ±15°, and 0°. Figure 17 The antenna radiation pattern is shown at an operating frequency of 12 GHz, with an azimuth angle Phi of 90° and elevation angles Theta of ±45°, ±30°, ±15°, and 0°. Figure 18 The S11 curves are shown for an operating frequency of 12 GHz, an antenna azimuth angle Phi of 90°, and elevation angles Theta of ±45°, ±30°, ±15°, and 0°.
[0083] In some examples, Figure 19 This is a schematic diagram of the Butler network matrix board of the holographic leaky wave antenna according to an embodiment of this disclosure; as shown Figure 19As shown, when the holographic leaky antenna in this embodiment of the present disclosure uses multi-point feeding, taking four-point feeding as an example, the feeding structure not only includes the probe 40 mentioned above, but may also include a feeding network board connected to the probe 40, such as a Butler network matrix board 200. The four second terminals of the Butler network matrix board 200 are respectively connected to the four probes 40, two of the four first terminals are connected to the absorption load, and the other two serve as the feed terminals for microwave signals. In this case, two independent sum and difference beams can be achieved by controlling the inputs of the two first terminals of the Butler network matrix board 200. Figure 20 The simulated normalized radiation pattern of the sum and difference beams of the holographic leaky wave antenna is given when the operating frequency is 12 GHz, the azimuth angle Phi is 0°, and the elevation angle Theta is 0°. The above describes a holographic leaky wave antenna using a single-layer flat panel as the first waveguide structure 20 in an embodiment of this disclosure.
[0084] In some embodiments, Figure 20 This is a top view of another holographic leaky wave antenna according to an embodiment of this disclosure; Figure 21 This is a cross-sectional view of another holographic leaky wave antenna according to an embodiment of this disclosure; as shown Figure 21 and 22 As shown, the holographic leaky wave antenna in this embodiment can have a double-layer parallel waveguide structure, that is, it not only includes the first waveguide structure 20 mentioned above, but also includes a second waveguide structure 80 disposed on the side of the radiating layer 30 near the first waveguide structure 20, and a second reference electrode layer 70 disposed on the side of the second waveguide structure 80 near the first waveguide structure 20.
[0085] Furthermore, the antenna in this example also includes a reflective component disposed around the periphery of the first waveguide structure 20 and the second structure. The reflective component 90 has a receiving space, within which at least the first waveguide structure 20, the second reference electrode layer 70, and the second waveguide structure 80 are disposed. Electromagnetic waves transmitted via the first waveguide structure 20 are reflected to the second waveguide structure 80 upon irradiation of the sidewall of the reflective component 90, and then transmitted to the radiation layer 30. Both the first reference electrode layer 60 and the second reference electrode layer 70 include, but are not limited to, ground electrode layers. In this embodiment, the first reference electrode layer 60 and the second reference electrode layer 70 are used as ground electrodes.
[0086] Furthermore, in the second waveguide structure 80, the center of the absorption load 81 is disposed opposite to the center of the first reference electrode layer 60 to absorb the remaining guided waves and prevent electromagnetic waves from being reflected back into the waveguide feed structure and interfering with the normal radiation of the antenna.
[0087] Secondly, embodiments of this disclosure provide an electronic device including the aforementioned holographic antenna. The antenna further includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit. The antenna can function as either a transmitting antenna or a receiving antenna. The transceiver unit may include a baseband and a receiving end. The baseband provides signals in at least one frequency band, such as 2G, 3G, 4G, and 5G signals, and transmits these signals to the radio frequency transceiver. After receiving the signal, the transparent antenna in the communication system processes it through the filtering unit, power amplifier, signal amplifier, and radio frequency transceiver (not shown) before transmitting it to the receiving end in the transceiver unit. The receiving end may be, for example, a smart gateway.
[0088] Furthermore, the RF transceiver is connected to the transceiver unit and is used to modulate the signals transmitted by the transceiver unit, or to demodulate the signals received by the transparent antenna before transmitting them to the transceiver unit. Specifically, the RF transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the baseband, the modulation circuit can modulate the various types of signals provided by the baseband before transmitting them to the antenna. The transparent antenna receives the signals and transmits them to the receiving circuit of the RF transceiver. The receiving circuit then transmits the signals to the demodulation circuit, which demodulates the signals before transmitting them to the receiving end.
[0089] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, which are then connected to a filtering unit. The filtering unit is connected to at least one antenna. During signal transmission in the communication system, the signal amplifier improves the signal-to-noise ratio (SNR) of the RF transceiver's output signal before transmitting it to the filtering unit; the power amplifier amplifies the power of the RF transceiver's output signal before transmitting it to the filtering unit. The filtering unit may specifically include a duplexer and a filtering circuit. The filtering unit combines the signals output from the signal amplifier and power amplifier, filters out clutter, and transmits them to the transparent antenna, which radiates the signal. During signal reception in the communication system, the antenna receives the signal and transmits it to the filtering unit. The filtering unit filters out clutter from the received signal and transmits it to the signal amplifier and power amplifier. The signal amplifier increases the gain of the received signal, improving the SNR; the power amplifier amplifies the power of the received signal. The signal received by the antenna, after processing by the power amplifier and signal amplifier, is transmitted to the RF transceiver, which then transmits it to the transceiver unit.
[0090] In some examples, the signal amplifier may include various types of signal amplifiers, such as low-noise amplifiers, without limitation.
[0091] In some examples, the antenna provided in this disclosure also includes a power management unit connected to a power amplifier to provide voltage to the power amplifier for amplifying signals.
[0092] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.
Claims
1. A holographic leaky-wave antenna, comprising a first waveguide structure, a first dielectric substrate, a radiation layer, a first reference electrode layer and a plurality of switch units; the first dielectric substrate is arranged on the first waveguide structure and has a first gap with the first waveguide structure, the first reference electrode layer is arranged on a side of the first waveguide structure facing away from the first dielectric substrate; the radiation layer is arranged on a side of the first dielectric substrate facing away from the first waveguide structure, and the radiation layer has a plurality of slit openings; wherein, the first waveguide structure is configured with at least one feeding port, and the feeding port has no overlap with the orthographic projection of the first reference electrode layer on the first dielectric substrate; the switch units are arranged one-to-one corresponding to the slit openings, and the switch units are configured to independently control the on-off state of the slit openings corresponding thereto.
2. The holographic leaky-wave antenna of claim 1, wherein, The switch unit comprises a second dielectric substrate arranged opposite to the first dielectric substrate, an adjustable dielectric layer between the second dielectric substrate and the radiation layer, and a patch electrode on a side of the second dielectric substrate close to the adjustable dielectric layer, the patch electrode at least partially overlaps with the orthographic projection of the slit opening on the second dielectric substrate.
3. The holographic leaky-wave antenna of claim 2, wherein, The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and the slit openings in each first slit opening group are arranged side by side along a first direction; the plurality of switch units constitute a plurality of first switch unit groups arranged side by side along the second direction, and the switch units in each first switch unit group are arranged side by side along the first direction; The patch electrodes of the first switch unit groups arranged adjacently define a first area, and a group of first bias voltage lines on the second dielectric substrate is arranged in one first area, and each first bias voltage line in a group of first bias voltage lines is connected to the patch electrode of one first switch unit group one by one.
4. The holographic leaky-wave antenna of claim 3, wherein, A plurality of first connection pads are also arranged on the second dielectric substrate, and one first bias voltage line is connected to one first connection pad through one first fan-out wire.
5. The holographic leaky-wave antenna of claim 2, wherein, The plurality of slit openings constitute a plurality of first slit opening groups arranged side by side along a second direction, and a plurality of second slit opening groups arranged side by side along a first direction, the slit openings in each first slit opening group are arranged side by side along a first direction, and the slit openings in each second slit opening group are arranged side by side along a second direction; the plurality of switch units constitute a plurality of first switch unit groups arranged side by side along a second direction, and a plurality of second switch unit groups arranged side by side along a first direction, the switch units in each first switch unit group are arranged side by side along a first direction, and the switch units in each second switch unit group are arranged side by side along a second direction; The switch unit further comprises a switch transistor on the second dielectric substrate; the second electrode of the switch transistor in each of the switch units is connected to the patch electrode, the control electrodes of the switch transistors in the same first switch unit group are connected to the same control signal line, and the first electrodes of the switch transistors in the same second switch unit group are connected to the same first bias voltage line.
6. The holographic leaky-wave antenna of claim 5, wherein, The second dielectric substrate is further provided with a plurality of first connection pads and a plurality of second connection pads, and one of the first bias voltage lines is connected to one of the first connection pads through a first fan-out wire, and one of the control signal lines is connected to one of the second connection pads through a second fan-out wire.
7. The holographic leaky-wave antenna of claim 1, wherein, The switch unit comprises a PIN diode, and the PIN diode is arranged on the first dielectric substrate and corresponds to the position of the slit opening.
8. The holographic leaky-wave antenna of claim 7, wherein, The plurality of slit openings form a plurality of first slit opening groups arranged side by side along the second direction, and the slit openings in each of the first slit opening groups are arranged side by side along the first direction; the plurality of switch units form a plurality of first switch unit groups arranged side by side along the second direction, and the switch units in each of the first switch unit groups are arranged side by side along the first direction; The patch electrodes of the first switch unit groups arranged adjacently define a first area, and one of the first areas is provided with a group of first bias voltage lines on the second dielectric substrate, and each of the first bias voltage lines in the group of first bias voltage lines is connected to the first electrode of the PIN diode of one of the first switch unit groups in a one-to-one manner; The second electrode of the PIN diode of one of the first switch unit groups is connected to a reference voltage line, and each of the reference voltage lines is connected through a signal lead-out line.
9. The holographic leaky-wave antenna of claim 8, wherein, The first dielectric substrate is further provided with a plurality of first connection pads and a third connection pad, and one of the first bias voltage lines is connected to one of the first connection pads through a first fan-out wire, and the signal lead-out line is connected to the third connection pad.
10. The holographic leaky-wave antenna of claim 7, wherein, The plurality of slit openings form a plurality of first slit opening groups arranged side by side along the second direction and a plurality of second slit opening groups arranged side by side along the first direction, the slit openings in each of the first slit opening groups are arranged side by side along the first direction, and the slit openings in each of the second slit opening groups are arranged side by side along the second direction; the plurality of switch units form a plurality of switch unit groups arranged side by side along the second direction and a plurality of second switch unit groups arranged side by side along the first direction, the switch units in each of the second switch unit groups are arranged side by side along the first direction, and the switch units in each of the second switch unit groups are arranged side by side along the second direction; The switch unit further comprises a switch transistor on the second dielectric substrate; the second electrode of the switch transistor in each of the switch units is connected to the first electrode of the PIN diode, the control electrodes of the switch transistors in the same second switch unit group are connected to the same control signal line, and the first electrodes of the switch transistors in the same second switch unit group are connected to the same first bias voltage line; The second electrode of the PIN diode of one of the second switch unit groups is connected to a reference voltage line, and each of the reference voltage lines is connected through a signal lead-out line.
11. The holographic leaky-wave antenna of claim 10, wherein, The second medium substrate is further provided with a plurality of first connection pads, a plurality of second connection pads and a third connection pad, one of the first bias voltage lines is connected to one of the first connection pads through a first fan-out wire, one of the control signal lines is connected to one of the second connection pads through a second fan-out wire, and the signal lead-out line is connected to the third connection pad.
12. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, The width of the slit opening at both ends is not less than the width of the middle.
13. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, Further comprising a feed structure configured to excite a microwave signal through the at least one feed port.
14. The holographic leaky-wave antenna of claim 13, wherein, The feed structure comprises a plurality of coaxial probes, one of the coaxial probes is installed at the position of one of the feed ports.
15. The holographic leaky-wave antenna of claim 14, wherein, The feed structure further comprises a Butler network matrix plate electrically connected to the coaxial probes.
16. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, The number of the feed ports is four, and the four feed ports are respectively a first feed port, a second feed port, a third feed port and a fourth feed port, the line connecting the center of the first feed port and the center of the second feed port is a first line segment; the line connecting the center of the third feed port and the center of the fourth feed port is a second line segment; the first line segment and the second line segment are perpendicular.
17. The holographic leaky-wave antenna of claim 16, wherein, The centers of the first feed port, the second feed port, the third feed port and the fourth feed port are equidistant from the center of the first waveguide structure, and the distance is a first distance.
18. The holographic leaky-wave antenna of claim 17, wherein, The first distance is 3-8mm.
19. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, The peripheral region of the first waveguide structure is provided with an absorbing material.
20. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, The radiation layer comprises at least two kinds of slit openings with different extension directions.
21. The holographic leaky-wave antenna of any one of Claims 1-11, wherein, Further comprising a second waveguide structure arranged on the side of the radiation layer close to the first waveguide structure, and a second reference electrode layer arranged on the side of the second waveguide structure close to the first waveguide structure.
22. The holographic leaky-wave antenna of claim 21, wherein, Further comprising an absorption load arranged in the second waveguide structure.
23. An electronic device comprising the holographic leaky-wave antenna of any one of claims 1-22.
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