A semiconductor laser element

Abstract

The present invention discloses a semiconductor laser element, which includes, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper cladding layer, an electron blocking layer, and a second upper cladding layer, wherein a first mode hopping suppression layer is provided between the lower cladding layer and the lower waveguide layer; a second mode hopping suppression layer is provided between the first upper cladding layer and the upper waveguide layer; and the electron blocking layer is located between the first upper cladding layer and the second upper cladding layer. The first mode hopping suppression layer and the second mode hopping suppression layer of the present invention have a breakdown field strength, an electron effective mass, and an electron affinity change angle and a change curve, suppress the capture effect and edge effect of the depletion region, reduce the capture of electrons by deep energy level traps, suppress the sudden change phenomenon of the symmetry breaking corresponding to the laser being far from the equilibrium state at the threshold, suppress the mode hopping problem of the laser, and reduce the threshold current density that produces mode hopping.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to the active layer or pn junction to produce radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor ultraviolet lasers have the following problems: after the laser emits stable laser saturation, the quasi-Fermi levels of holes and electrons are pinned, stimulated radiation dominates, injected carriers are completely converted into photon output, carrier concentration reaches saturation, optical gain reaches saturation, junction voltage also reaches saturation, and the carrier concentration in the cavity does not change with the current. The symmetry breaking corresponding to the phase transition of the laser far from the equilibrium state causes the laser to have discontinuity or mutation at the threshold, such as conductivity jump, capacitance sink, junction voltage jump, series resistance sink, ideal factor jump, etc. This discontinuity phenomenon is mainly affected by the capture effect of the depletion region, surface conditions, edge effects, deep energy level traps, insulating interface layers, and series resistance. Summary of the invention

[0009] The present invention proposes a semiconductor laser element, designs the breakdown field strength of the first mode hopping suppression layer and the second mode hopping suppression layer, the change angle and change curve of the electron effective mass and the electron affinity, suppresses the capture effect and the edge effect of the depletion region, reduces the capture of electrons by deep energy level traps, suppresses the sudden change phenomenon of the symmetry breaking corresponding to the laser being far away from the equilibrium state at the threshold, suppresses the mode hopping problem of the laser, and reduces the threshold current density that causes mode hopping.

[0010] The present invention provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper cladding layer, an electron blocking layer, and a second upper cladding layer.

[0011] A first mode hop suppression layer is provided between the lower cladding layer and the lower waveguide layer; a second mode hop suppression layer is provided between the first upper cladding layer and the upper waveguide layer; the electron blocking layer is located between the first upper cladding layer and the second upper cladding layer; a descending angle of a peak position of the breakdown field strength of the first mode hop suppression layer toward the lower cladding layer is α, a rising angle of a valley position of the breakdown field strength of the first mode hop suppression layer toward the active layer is β, a descending angle of a peak position of the breakdown field strength of the second mode hop suppression layer toward the upper cladding layer is γ, a rising angle of a valley position of the breakdown field strength of the second mode hop suppression layer toward the active layer is θ, wherein: 30°≤γ≤α≤θ≤β≤90°;

[0012] The rising angle of the valley position of the electron effective mass of the first mode hop suppression layer toward the lower cladding layer is δ, the descending angle of the peak position of the electron effective mass of the first mode hop suppression layer toward the active layer is σ, the rising angle of the valley position of the electron effective mass of the second mode hop suppression layer toward the upper cladding layer is φ, and the descending angle of the peak position of the electron effective mass of the second mode hop suppression layer toward the active layer is ψ, wherein: 15°≤φ≤δ≤ψ≤σ≤90°.

[0013] Preferably, the descending angle of the peak position of the electron affinity of the first mode hop suppression layer toward the lower cladding layer is μ, the rising angle of the valley position of the electron affinity of the first mode hop suppression layer toward the active layer is υ, the descending angle of the peak position of the electron affinity of the second mode hop suppression layer toward the upper cladding layer is ρ, and the rising angle of the valley position of the electron affinity of the second mode hop suppression layer toward the active layer is ω, wherein: 35°≤ρ≤μ≤ω≤υ≤90°.

[0014] Preferably, the rising angle of the valley position of the piezoelectric polarization coefficient of the first mode hop suppression layer toward the lower cladding layer is ε, the descending angle of the peak position of the piezoelectric polarization coefficient of the first mode hop suppression layer toward the active layer is η, the rising angle of the valley position of the piezoelectric polarization coefficient of the second mode hop suppression layer toward the upper cladding layer is κ, and the descending angle of the peak position of the piezoelectric polarization coefficient of the second mode hop suppression layer toward the active layer is ζ, wherein: 25°≤κ≤ε≤ζ≤η≤90°.

[0015] Preferably, the descending angle of the peak position of the spontaneous polarization coefficient of the first mode hop suppression layer toward the lower cladding layer is χ, the rising angle of the valley position of the spontaneous polarization coefficient of the first mode hop suppression layer toward the active layer is π, the descending angle of the peak position of the spontaneous polarization coefficient of the second mode hop suppression layer toward the upper cladding layer is τ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second mode hop suppression layer toward the active layer is λ, wherein: 20°≤τ≤χ≤λ≤π≤90°.

[0016] Preferably, the descent angle of the peak position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the first mode hopping suppression layer toward the lower cladding layer, the rising angle of the trough position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the first mode hopping suppression layer toward the active layer, the descent angle of the peak position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the second mode hopping suppression layer toward the upper cladding layer, the rising angle of the trough position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the second mode hopping suppression layer toward the active layer, the electron effective mass of the first mode hopping suppression layer The rising angle of the valley position of the piezoelectric polarization coefficient toward the lower cladding layer, the descending angle of the electron effective mass and the peak position of the piezoelectric polarization coefficient of the first mode hop suppression layer toward the active layer, the rising angle of the valley position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer toward the upper cladding layer, and the descending angle of the peak position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer toward the active layer have the following relationship: 15°≤φ≤δ≤ψ≤σ≤τ≤χ≤λ≤π≤κ≤ε≤ζ≤η≤γ≤α≤θ≤β≤ρ≤μ≤ω≤υ≤90°.

[0017] Preferably, the first mode hop suppression layer and the second mode hop suppression layer constitute a mode hop suppression layer; the mode hop suppression layer is any one or any combination of GaN, Al GaN, InGaN, Al InGaN, Al InN, Al N, InGaN / GaN superlattice, InGaN / Al InGaN superlattice, InGaN / Al InGaN superlattice, InGaN / Al InN superlattice, GaN / Al GaN superlattice, GaN / Al InGaN superlattice, and GaN / Al N superlattice.

[0018] Preferably, the breakdown field intensity distribution of the first mode hopping suppression layer is y=log a ((m+x) / (mx))(a>1,m>0) The third quadrant curve distribution; The electron effective mass distribution y=log of the first mode hopping suppression layer b ((n+x) / (nx))(0<n<1, n>0) second quadrant curve distribution; the electron affinity energy distribution of the first mode hopping suppression layer y=log c ((p+x) / (px))(c>1,p>0) third quadrant curve distribution; piezoelectric polarization coefficient distribution y=log d ((q+x) / (qx))(0<d<1, q>0) second quadrant curve distribution; spontaneous polarization coefficient distribution y=log of the first mode hopping suppression layer f ((r+x) / (rx))(f>1,r>0) The third quadrant curve distribution;

[0019] The breakdown field intensity distribution of the second mode hopping suppression layer is y=log g ((s+x) / (sx))(0<g<1, s>0) fourth quadrant curve distribution; the electron effective mass distribution y=log of the second mode hopping suppression layer h ((t+x) / (tx))(h>1, t>0) first quadrant curve distribution; the electron affinity energy distribution of the second mode hopping suppression layer y=log j ((u+x) / (ux))(0<j<1, u>0) fourth quadrant curve distribution; the piezoelectric polarization coefficient distribution y=log k ((v+x) / (vx))(k>1, v>0) first quadrant curve distribution; the spontaneous polarization coefficient distribution y=log of the second mode hopping suppression layer k ((w+x) / (wx))(0<k<1, w>0) fourth quadrant curve distribution.

[0020] Preferably, the breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the first mode hopping suppression layer have the following relationship: 0<b≤d<1<f≤a≤c; the breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the second mode hopping suppression layer have the following relationship: 0<k≤g≤j<1<h≤k.

[0021] Preferably, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 100 angstroms. The barrier layer of the active layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms;

[0022] The lower cladding layer, upper waveguide layer, lower waveguide layer, electron blocking layer and upper cladding layer are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

[0023] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x 、Sapphire / SiO2 / Si N x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and Li GaO2 composite substrate.

[0024] Compared with the prior art, a semiconductor laser element provided by an embodiment of the present invention has the following beneficial effects: the breakdown field strength, electron effective mass and electron affinity of the first mode hopping suppression layer and the second mode hopping suppression layer are designed to change the angle and curve of the breakdown field strength, the electron effective mass and the electron affinity, suppress the capture effect and the edge effect of the depletion region, reduce the capture of electrons by deep energy level traps, suppress the sudden change phenomenon of the symmetry breaking corresponding to the laser being far away from the equilibrium state at the threshold, suppress the mode hopping problem of the laser, and reduce the threshold current density for generating mode hopping; at the same time, the spontaneous polarization coefficient and the piezoelectric polarization coefficient of the first mode hopping suppression layer and the second mode hopping suppression layer are designed to change the angle and curve of the spontaneous polarization coefficient and the piezoelectric polarization coefficient, regulate the polarization effect between the lower cladding layer and the lower waveguide layer and between the first upper cladding layer and the upper waveguide layer, increase the ratio of the electron occupation probability in the conduction band to the valence band occupation probability, increase the non-equilibrium carrier concentration, make the laser generated by the highly degenerate electron-hole recombination oscillate and stably amplify in the resonant cavity, and the stimulated emission is stably and continuously output, further reducing the mode hopping problem caused by the polarization effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic structural diagram of a semiconductor laser element according to an embodiment of the present invention;

[0026] Figure 2 It is a SIMS secondary ion mass spectrum of the structure of a semiconductor laser element according to an embodiment of the present invention;

[0027] Figure 3 This is a SIMS secondary ion mass spectrum diagram of the structure of a semiconductor laser element according to an embodiment of the present invention (partially enlarged diagram);

[0028] Figure 4 This is a TEM lens electron microscope image of a semiconductor laser element according to an embodiment of the present invention;

[0029] Figure 5 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser element according to an embodiment of the present invention;

[0030] Figure 6This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser element according to an embodiment of the present invention.

[0031] Reference numerals: 100: substrate, 101: lower cladding layer, 102: lower waveguide layer, 103: active layer, 104: upper waveguide layer, 105: upper cladding layer, 105a: first upper cladding layer, 106: electron blocking layer, 105b: second upper cladding layer, 107a: first mode hop suppression layer, 107b: second mode hop suppression layer. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In order to solve the above problems, a semiconductor laser element provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0034] Reference Figure 1-6 The present invention provides a semiconductor laser element, which includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a first upper cladding layer 105a, an electron blocking layer 106, and a second upper cladding layer 105b.

[0035] A first mode hop suppression layer 107a is provided between the lower cladding layer 101 and the lower waveguide layer 102; a second mode hop suppression layer 107b is provided between the first upper cladding layer 105a and the upper waveguide layer 104; the electron blocking layer 106 is located between the first upper cladding layer 105a and the second upper cladding layer 105b; a decreasing angle of a peak position of the breakdown field strength of the first mode hop suppression layer 107a toward the lower cladding layer 101 is α, a rising angle of a valley position of the breakdown field strength of the first mode hop suppression layer 107a toward the active layer 103 is β, a decreasing angle of a peak position of the breakdown field strength of the second mode hop suppression layer 107b toward the upper cladding layer is γ, and a rising angle of a valley position of the breakdown field strength of the second mode hop suppression layer 107b toward the active layer 103 is θ, wherein: 30°≤γ≤α≤θ≤β≤90°;

[0036] The rising angle of the valley position of the electron effective mass of the first mode hop suppression layer 107a toward the lower cladding layer 101 is δ, the descending angle of the peak position of the electron effective mass of the first mode hop suppression layer 107a toward the active layer 103 is σ, the rising angle of the valley position of the electron effective mass of the second mode hop suppression layer 107b toward the upper cladding layer 105 is φ, and the descending angle of the peak position of the electron effective mass of the second mode hop suppression layer 107b toward the active layer 103 is ψ, wherein: 15°≤φ≤δ≤ψ≤σ≤90°.

[0037] The descending angle of the peak position of the electron affinity of the first mode hop suppression layer 107a toward the lower cladding layer 101 is μ, the rising angle of the valley position of the electron affinity of the first mode hop suppression layer 107a toward the active layer 103 is υ, the descending angle of the peak position of the electron affinity of the second mode hop suppression layer 107b toward the upper cladding layer 105 is ρ, and the rising angle of the valley position of the electron affinity of the second mode hop suppression layer 107b toward the active layer 103 is ω, wherein: 35°≤ρ≤μ≤ω≤υ≤90°.

[0038] The rising angle of the valley position of the piezoelectric polarization coefficient of the first mode hop suppression layer 107a toward the lower cladding layer 101 is ε, the descending angle of the peak position of the piezoelectric polarization coefficient of the first mode hop suppression layer 107a toward the active layer 103 is η, the rising angle of the valley position of the piezoelectric polarization coefficient of the second mode hop suppression layer 107b toward the upper cladding layer 105 is κ, and the descending angle of the peak position of the piezoelectric polarization coefficient of the second mode hop suppression layer 107b toward the active layer 103 is ζ, wherein: 25°≤κ≤ε≤ζ≤η≤90°.

[0039] The descending angle of the peak position of the spontaneous polarization coefficient of the first mode hop suppression layer 107a toward the lower cladding layer 101 is χ, the rising angle of the valley position of the spontaneous polarization coefficient of the first mode hop suppression layer 107a toward the active layer 103 is π, the descending angle of the peak position of the spontaneous polarization coefficient of the second mode hop suppression layer 107b toward the upper cladding layer 105 is τ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second mode hop suppression layer 107b toward the active layer 103 is λ, wherein: 20°≤τ≤χ≤λ≤π≤90°.

[0040] the descending angle of the peak position of the breakdown field strength, electron affinity, and spontaneous polarization coefficient of the first mode hopping suppression layer 107a toward the lower cladding layer 101, the rising angle of the valley position of the breakdown field strength, electron affinity, and spontaneous polarization coefficient of the first mode hopping suppression layer 107a toward the active layer 103, the descending angle of the peak position of the breakdown field strength, electron affinity, and spontaneous polarization coefficient of the second mode hopping suppression layer 107b toward the upper cladding layer 105, the rising angle of the valley position of the breakdown field strength, electron affinity, and spontaneous polarization coefficient of the second mode hopping suppression layer 107b toward the active layer 103, and the electron affinity of the first mode hopping suppression layer 107a. The rising angle of the valley position of the effective mass piezoelectric polarization coefficient toward the lower cladding layer 101, the descending angle of the peak position of the electron effective mass and piezoelectric polarization coefficient of the first mode hop suppression layer 107a toward the active layer 103, the rising angle of the valley position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer 107b toward the upper cladding layer 105, and the descending angle of the peak position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer 107b toward the active layer 103 have the following relationship: 15°≤φ≤δ≤ψ≤σ≤τ≤χ≤λ≤π≤κ≤ε≤ζ≤η≤γ≤α≤θ≤β≤ρ≤μ≤ω≤υ≤90°.

[0041] The breakdown field intensity distribution of the first mode hopping suppression layer 107a is y=log a ((m+x) / (mx))(a>1, m>0) The third quadrant curve distribution; The electron effective mass distribution y=log of the first mode hopping suppression layer 107a b ((n+x) / (nx))(0<n<1, n>0) second quadrant curve distribution; the electron affinity energy distribution of the first mode hopping suppression layer 107a is y=log c ((p+x) / (px))(c>1, p>0) The third quadrant curve distribution; The piezoelectric polarization coefficient distribution y=log of the first mode hopping suppression layer 107a d ((q+x) / (qx))(0<d<1, q>0) second quadrant curve distribution; spontaneous polarization coefficient distribution y=log of the first mode hopping suppression layer 107a f ((r+x) / (rx))(f>1,r>0) The third quadrant curve distribution;

[0042] The breakdown field intensity distribution of the second mode hopping suppression layer 107b is y=log g ((s+x) / (sx))(0<g<1, s>0) fourth quadrant curve distribution; the electron effective mass distribution y=log of the second mode hop suppression layer 107b h((t+x) / (tx))(h>1, t>0) first quadrant curve distribution; the electron affinity energy distribution of the second mode hopping suppression layer 107b is y=log j ((u+x) / (ux))(0<j<1, u>0) fourth quadrant curve distribution; piezoelectric polarization coefficient distribution y=log of the second mode hop suppression layer 107b k ((v+x) / (vx))(k>1, v>0) first quadrant curve distribution; the spontaneous polarization coefficient distribution y=log of the second mode hop suppression layer 107b k ((w+x) / (wx))(0<k<1, w>0) fourth quadrant curve distribution.

[0043] The breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the first mode hopping suppression layer 107a have the following relationship: 0<b≤d<1<f≤a≤c; the breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the second mode hopping suppression layer 107b have the following relationship: 0<k≤g≤j<1<h≤k.

[0044] In summary, the change angles and curves of the breakdown field strength, electron effective mass and electron affinity of the first mode hopping suppression layer 107a and the second mode hopping suppression layer 107b suppress the capture effect and edge effect of the depletion region, reduce the capture of electrons by deep energy level traps, suppress the sudden change phenomenon of symmetry breaking corresponding to the laser being far away from the equilibrium state at the threshold, suppress the mode hopping problem of the laser, and reduce the threshold current density for mode hopping; at the same time, the change angles and curves of the spontaneous polarization coefficient and the piezoelectric polarization coefficient of the first mode hopping suppression layer 107a and the second mode hopping suppression layer 107b are designed to regulate the polarization effect between the lower cladding layer 101 and the lower waveguide layer 102 and between the first upper cladding layer 105a and the upper waveguide layer 104, increase the ratio of the electron occupation probability in the conduction band to the valence band occupation probability, increase the non-equilibrium carrier concentration, make the laser generated by the highly degenerate electron-hole recombination oscillate and stably amplify in the resonant cavity, and the stimulated emission is stably and continuously output, further reducing the mode hopping problem caused by the polarization effect.

[0045] In the present invention, the first mode hop suppression layer 107a and the second mode hop suppression layer 107b constitute a mode hop suppression layer 107; the mode hop suppression layer 107 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice.

[0046] In the present invention, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 100 angstroms. The barrier layer of the active layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0047] In the present invention, the lower cladding layer, the upper waveguide layer, the lower waveguide layer, the electron blocking layer, and the upper cladding layer are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0048] In the present invention, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x 、Sapphire / SiO2 / Si N x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0049] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element, comprising, from bottom to top, a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), a first upper cladding layer (105a), an electron blocking layer (106), and a second upper cladding layer (105b), characterized in that: A first mode hopping suppression layer (107a) is provided between the lower cladding layer (101) and the lower waveguide layer (102); a second mode hopping suppression layer (107b) is provided between the first upper cladding layer (105a) and the upper waveguide layer (104); the electron blocking layer (106) is located between the first upper cladding layer (105a) and the second upper cladding layer (105b); the peak position of the breakdown field intensity of the first mode hopping suppression layer (107a) is closer to the lower cladding layer (101 ), the descending angle of the valley position of the breakdown field strength of the first mode hopping suppression layer (107a) toward the active layer (103) is β, the descending angle of the peak position of the breakdown field strength of the second mode hopping suppression layer (107b) toward the upper cladding layer is γ, and the rising angle of the valley position of the breakdown field strength of the second mode hopping suppression layer (107b) toward the active layer (103) is θ, wherein: 30°≤γ≤α≤θ≤β≤90°; The rising angle of the valley position of the electron effective mass of the first mode hop suppression layer (107a) toward the lower cladding layer (101) is δ, the falling angle of the peak position of the electron effective mass of the first mode hop suppression layer (107a) toward the active layer (103) is σ, the rising angle of the valley position of the electron effective mass of the second mode hop suppression layer (107b) toward the upper cladding layer (105) is φ, and the falling angle of the peak position of the electron effective mass of the second mode hop suppression layer (107b) toward the active layer (103) is ψ, wherein: 15°≤φ≤δ≤ψ≤σ≤90°.

2. A semiconductor laser element according to claim 1, characterized in that: The descending angle of the peak position of the electron affinity of the first mode hop suppression layer (107a) toward the lower cladding layer (101) is μ, the rising angle of the valley position of the electron affinity of the first mode hop suppression layer (107a) toward the active layer (103) is υ, the descending angle of the peak position of the electron affinity of the second mode hop suppression layer (107b) toward the upper cladding layer (105) is ρ, and the rising angle of the valley position of the electron affinity of the second mode hop suppression layer (107b) toward the active layer (103) is ω, wherein: 35°≤ρ≤μ≤ω≤υ≤90°.

3. The semiconductor laser element according to claim 1, characterized in that: The rising angle of the valley position of the piezoelectric polarization coefficient of the first mode hop suppression layer (107a) toward the lower cladding layer (101) is ε, the falling angle of the peak position of the piezoelectric polarization coefficient of the first mode hop suppression layer (107a) toward the active layer (103) is η, the rising angle of the valley position of the piezoelectric polarization coefficient of the second mode hop suppression layer (107b) toward the upper cladding layer (105) is κ, and the falling angle of the peak position of the piezoelectric polarization coefficient of the second mode hop suppression layer (107b) toward the active layer (103) is ζ, wherein: 25°≤κ≤ε≤ζ≤η≤90°.

4. The semiconductor laser element according to claim 1, characterized in that: The descending angle of the peak position of the spontaneous polarization coefficient of the first mode hop suppression layer (107a) toward the lower cladding layer (101) is χ, the rising angle of the valley position of the spontaneous polarization coefficient of the first mode hop suppression layer (107a) toward the active layer (103) is π, the descending angle of the peak position of the spontaneous polarization coefficient of the second mode hop suppression layer (107b) toward the upper cladding layer (105) is τ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second mode hop suppression layer (107b) toward the active layer (103) is λ, wherein: 20°≤τ≤χ≤λ≤π≤90°.

5. A semiconductor laser element according to claim 4, characterized in that: The falling angle of the peak position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the first mode hopping suppression layer (107a) toward the lower cladding layer (101), the rising angle of the valley position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the first mode hopping suppression layer (107a) toward the active layer (103), the falling angle of the peak position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the second mode hopping suppression layer (107b) toward the upper cladding layer (105), the rising angle of the valley position of the breakdown field strength, electron affinity and spontaneous polarization coefficient of the second mode hopping suppression layer (107b) toward the active layer (103), the The rising angle of the valley position of the electron effective mass piezoelectric polarization coefficient toward the lower cladding layer (101), the descending angle of the peak position of the electron effective mass and piezoelectric polarization coefficient of the first mode hop suppression layer (107a) toward the active layer (103), the rising angle of the valley position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer (107b) toward the upper cladding layer (105), and the descending angle of the peak position of the electron effective mass piezoelectric polarization coefficient of the second mode hop suppression layer (107b) toward the active layer (103) have the following relationship: 15°≤φ≤δ≤ψ≤σ≤τ≤χ≤λ≤π≤κ≤ε≤ζ≤η≤γ≤α≤θ≤β≤ρ≤μ≤ω≤υ≤90°.

6. The semiconductor laser element according to claim 1, characterized in that: The first mode hop suppression layer (107a) and the second mode hop suppression layer (107b) constitute a mode hop suppression layer (107); the mode hop suppression layer (107) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice.

7. The semiconductor laser element according to claim 1, characterized in that: The breakdown field intensity distribution of the first mode hopping suppression layer (107a) is y=log a ((m+x) / (mx))(a>1, m>0) third quadrant curve distribution; the electron effective mass distribution y=log b ((n+x) / (nx))(0<n<1, n>0) second quadrant curve distribution; the electron affinity energy distribution of the first mode hopping suppression layer (107a) is y=log c ((p+x) / (px))(c>1,p>0) third quadrant curve distribution; piezoelectric polarization coefficient distribution y=log d ((q+x) / (qx))(0<d<1, q>0) second quadrant curve distribution; the spontaneous polarization coefficient distribution y of the first mode hopping suppression layer (107a) is y=log f ((r+x) / (rx))(f>1,r>0) The third quadrant curve distribution; The breakdown field intensity distribution of the second mode hopping suppression layer (107b) is y=log g ((s+x) / (sx))(0<g<1, s>0) fourth quadrant curve distribution; the electron effective mass distribution y=log h ((t+x) / (tx))(h>1, t>0) first quadrant curve distribution; the electron affinity energy distribution of the second mode hopping suppression layer (107b) is y=log j ((u+x) / (ux))(0<j<1, u>0) fourth quadrant curve distribution; the piezoelectric polarization coefficient distribution y=log k ((v+x) / (vx))(k>1, v>0) first quadrant curve distribution; the spontaneous polarization coefficient distribution y=log k ((w+x) / (wx))(0<k<1, w>0) fourth quadrant curve distribution.

8. The semiconductor laser element according to claim 7, characterized in that: The breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the first mode hopping suppression layer (107a) have the following relationship: 0<b≤d<1<f≤a≤c; the breakdown field strength distribution, electron effective mass distribution, electron affinity distribution, piezoelectric polarization coefficient distribution, and spontaneous polarization coefficient distribution of the second mode hopping suppression layer (107b) have the following relationship: 0<k≤g≤j<1<h≤k.

9. The semiconductor laser element according to claim 1, characterized in that: The well layer of the active layer (103) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 100 angstroms. The barrier layer of the active layer (103) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 200 angstroms; The lower cladding layer (101), the upper waveguide layer (104), the lower waveguide layer (102), the electron blocking layer (106), and the upper cladding layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor laser element according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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