Light-emitting device, display panel and display device

Abstract

The embodiment of the invention provides a light-emitting device, a display panel and a display device, relates to the technical field of display, and aims to solve the problem of poor electronic stability of a first type of functional layer. The light-emitting device comprises a cathode and an anode which are oppositely arranged, and at least two light-emitting units arranged between the cathode and the anode, and the at least two light-emitting units are arranged in a stacked mode. At least one light-emitting unit in the at least two light-emitting units comprises a light-emitting layer and a first type functional layer arranged on one side of the light-emitting layer; the first functional layer comprises an auxiliary functional layer, the material of the auxiliary functional layer comprises a first functional material, and the first functional material is selected from any one of structures shown in a general formula (I). The light-emitting device is used for displaying images.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting device, a display panel and a display apparatus. Background Art

[0002] Organic light emitting diode (OLED) light emitting devices have become the most promising new light emitting devices in recent years due to their advantages such as self-luminescence and fast response speed. In the light emitting process of the OLED light emitting device, holes from the anode and electrons from the cathode are emitted to the light emitting layer included in the OLED light emitting device, these electrons and holes are combined to form electron-hole pairs, and the formed electron-hole pairs are converted from the singlet state to the ground state to emit light. Summary of the invention

[0003] Some embodiments of the present disclosure provide a light-emitting device, a display panel and a display apparatus. The light-emitting device includes an auxiliary functional layer in the first functional layer. The material of the auxiliary functional layer includes a first functional material with higher electronic stability, which can be used to improve the problem of poor electronic stability of the first functional layer.

[0004] To achieve the above objectives, some embodiments of the present disclosure provide the following technical solutions:

[0005] In one aspect, a light-emitting device is provided. The light-emitting device comprises a cathode and an anode arranged opposite to each other, and at least two light-emitting units arranged between the cathode and the anode, wherein the at least two light-emitting units are arranged in a stacked manner; at least one of the at least two light-emitting units comprises: a light-emitting layer and a first type functional layer arranged on one side of the light-emitting layer; the first type functional layer comprises an auxiliary functional layer, the material of the auxiliary functional layer comprises a first functional material, and the first functional material is selected from any one of the structures shown in the following general formula (I).

[0006]

[0007] Wherein, L1 is selected from any one of a single bond, a substituted or unsubstituted C6-C39 arylene group and a substituted or unsubstituted C6-C39 heteroarylene group. L2 is selected from any one of a substituted or unsubstituted C6-C39 arylene group and a substituted or unsubstituted C6-C39 heteroarylene group. Ar1, Ar2 and Ar3 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 arylphosphino group and a substituted or unsubstituted C6-C39 arylsilyl group.

[0008] Based on the above structure of the first functional material, on the one hand, by setting two triarylamine groups, the first functional material is a hole-type material, which can be used to transport holes and block electrons. In this way, the first type functional layer containing the first functional material can achieve effective hole injection and fast hole transport. On the other hand, in the structure shown in general formula (I), the phenantheline group is the part of the first functional material that serves as an electron acceptor, and the two triarylamine groups are the parts of the first functional material that serve as electron donors. Compared with the materials of the first type functional layer of aromatic amines in some implementations, the first functional material adds the phenantheline group as the electron acceptor part. In this way, in the compound molecules of the first functional material, the lowest unoccupied molecular orbital (i.e., LUMO orbital) will be distributed on the electron acceptor part (i.e., the phenantheline group), so that the electrons are limitedly distributed on the fragments corresponding to the phenantheline group, preventing the electrons from attacking the carbon-nitrogen bond and causing the carbon-nitrogen bond to break. In this way, the electronic stability of the first functional material is effectively improved, which can improve the stability of the light-emitting device and extend the service life of the light-emitting device.

[0009] In some embodiments, the first type of functional layer is located on a side of the light emitting layer close to the anode; and the auxiliary functional layer is configured to block electrons.

[0010] In some embodiments, the first type functional layer further includes an electron blocking layer stacked with the auxiliary functional layer, and the material of the electron blocking layer includes a second functional material, and the second functional material is selected from any one of the structures shown in the following general formula (II).

[0011]

[0012] Wherein, L3 is selected from any one of a single bond, a substituted or unsubstituted C3-C30 arylene group and a substituted or unsubstituted C3-C30 heteroarylene group. Ar5 and Ar6 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 arylphosphino group and a substituted or unsubstituted C6-C39 arylsilyl group. Ar7 and R1 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted Any one of a C6-C39 arylamine group, a substituted or unsubstituted C3-C39 cycloalkyl group, a substituted or unsubstituted C3-C39 heterocycloalkyl group, a substituted or unsubstituted C1-C39 alkylsilyl group, a substituted or unsubstituted C1-C39 alkylboryl group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 arylphosphine group, and a substituted or unsubstituted C6-C39 arylsilyl group. m is a positive integer greater than or equal to 1.

[0013] In some embodiments, the electron blocking layer, located on a side of the auxiliary functional layer away from the light emitting layer, is configured to block electrons.

[0014] In some embodiments, the first type of functional layer further includes a hole transport layer stacked with the electron blocking layer, and the material of the hole transport layer includes a third functional material, and the third functional material is selected from any one of the structures shown in the following general formula (II).

[0015]

[0016] wherein L4 is selected from any one of a substituted or unsubstituted C3-C30 arylene group and a substituted or unsubstituted C3-C30 heteroarylene group. 10 and Ar 11 The same or different, each independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C1-C39 alkoxy group, a substituted or unsubstituted C6-C39 arylamine group and a substituted or unsubstituted C6-C39 arylsilyl group.

[0017] In some embodiments, the hole transport layer, located on a side of the electron blocking layer away from the light emitting layer, is configured to transport holes.

[0018] In some embodiments, the first functional material is selected from any one of the structures shown in the following general formula (IV).

[0019]

[0020] Wherein, X is selected from any one of O, S, N(R2) and C(R3R4). R2, R3, R4 and Ar4 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkoxy ... Any one of a substituted C6~C39 aromatic amino group, a substituted or unsubstituted C3~C39 cycloalkyl group, a substituted or unsubstituted C3~C39 heterocycloalkyl group, a substituted or unsubstituted C1~C39 alkylsilyl group, a substituted or unsubstituted C1~C39 alkylboryl group, a substituted or unsubstituted C6~C39 arylboryl group, a substituted or unsubstituted C6~C39 aromatic phosphine group and a substituted or unsubstituted C6~C39 aromatic silyl group.

[0021] In some embodiments, when the first functional material is selected from any one of the structures shown in general formula (I), the structure shown in general formula (I) contains at least one deuterium; or, when the first functional material is selected from any one of the structures shown in general formula (IV), the structure shown in general formula (IV) contains at least one deuterium.

[0022] In some embodiments, at least one of Ar5, Ar6, Ar7, L3 and R1 contains deuterium.

[0023] In some embodiments, Ar8, Ar9, Ar 10 ,Ar 11 At least one of L1 and L4 contains deuterium.

[0024] In some embodiments, Ar8, Ar9, Ar 10 and Ar 11 Of these, at least one is different from the other three.

[0025] In some embodiments, the first ionization potential of the first functional material is greater than or equal to the first ionization potential of the second functional material; the first ionization potential of the second functional material is greater than or equal to the first ionization potential of the third functional material.

[0026] In some embodiments, the difference between the first ionization potential of the first functional material and the first ionization potential of the second functional material is less than or equal to 0.2 eV.

[0027] In some embodiments, the difference between the first ionization potential of the second functional material and the first ionization potential of the third functional material is less than or equal to 0.2 eV.

[0028] In some embodiments, a difference between a first ionization potential of the first functional material and a first ionization potential of the third functional material is less than or equal to 0.3 eV.

[0029] In some embodiments, the thickness of the electron blocking layer is greater than or equal to the thickness of the auxiliary functional layer.

[0030] In some embodiments, the thickness of the auxiliary functional layer ranges from 5 nm to 50 nm.

[0031] In some embodiments, the thickness of the electron blocking layer ranges from 10 nm to 55 nm.

[0032] In some embodiments, the thickness of the hole transport layer ranges from 50 nm to 200 nm.

[0033] In some embodiments, the light-emitting device further comprises a charge generation layer, which is located between two adjacent light-emitting units of at least two light-emitting units; the charge generation layer comprises an electron generation layer and a hole generation layer which are stacked; and the material of the hole generation layer comprises a third functional material.

[0034] In some embodiments, the first type of functional layer further includes a hole injection layer, which is located on a side of the hole transport layer away from the electron blocking layer; and the material of the hole injection layer includes a third functional material.

[0035] In some embodiments, each of the at least two light-emitting units further includes a second type of functional layer, which is located on a side of the light-emitting layer away from the first type of functional layer and is configured to transport electrons.

[0036] In some embodiments, the light-emitting layer of each of the at least two light-emitting units is configured to emit green light.

[0037] In another aspect, a display panel is provided. The display panel comprises: the light emitting device and a driving circuit as described in any one of the above embodiments. The driving circuit is used to drive the light emitting device to emit light.

[0038] The beneficial effects that can be achieved by the display panel provided by some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by a light-emitting device provided by the above technical solution, and will not be repeated here.

[0039] In another aspect, a display device is provided. The display device comprises the display panel and a driver chip as described in any of the above embodiments. The driver chip is used to drive the display panel to display.

[0040] The beneficial effects that can be achieved by the display device provided by some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by a light-emitting device provided by the above technical solution, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0042] Figure 1 A structural diagram of a display device provided according to some embodiments of the present disclosure;

[0043] Figure 2 A structural diagram of a display panel provided according to some embodiments of the present disclosure;

[0044] Figure 3 A structural diagram of a display panel provided according to some embodiments of the present disclosure;

[0045] Figure 4 A structural diagram of a light emitting device provided according to some embodiments of the present disclosure;

[0046] Figure 5 Another structural diagram of a light emitting device provided according to some embodiments of the present disclosure;

[0047] Figure 6 is an orbital distribution diagram of a first functional material provided according to some embodiments of the present disclosure;

[0048] Figure 7 is another orbital distribution diagram of the first functional material provided according to some embodiments of the present disclosure;

[0049] Figure 8 is another structural diagram of a light emitting device provided according to some embodiments of the present disclosure;

[0050] Fig. 9 A structural diagram of a test device 30 provided according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0051] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0052] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0053] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0054] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0055] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0056] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0057] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality may be, for example, the difference between the two equalities is less than or equal to 5% of either one.

[0058] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0059] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0060] It should be noted that, for example, 1 / 2 in the drawings of the present disclosure indicates that both component 1 and component 2 can refer to the same component, and for example, 301 / 302 indicates that both test device 301 and test device 302 can be represented by the same component. Other similar reference numerals in the drawings also follow the above description. Other similar reference numerals in the drawings also follow the above description.

[0061] like Figure 1 As shown, some embodiments of the present disclosure provide a display device 1000 , which includes: a display panel 100 .

[0062] In some examples, the display device 1000 may be, for example, an OLED (Organic Light Emitting Diode) display device.

[0063] For example, Figure 1 As shown, the display device 1000 further includes a driving chip 200. The driving chip 200 is used to drive the display panel 100 to display.

[0064] In some examples, the driver chip 200 is electrically connected to the display panel 100 through a flexible circuit board, and is bent to the back of the display panel 100 along with the flexible circuit board to narrow the frame of the display device 1000 and increase the display area. Figure 1 The dotted line indicates that the driving chip 200 is on the back of the display panel 100 .

[0065] In addition, the display device 1000 may further include an under-screen camera and an under-screen fingerprint recognition sensor, so that the display device 1000 can realize a variety of different functions such as taking pictures, recording videos, fingerprint recognition or face recognition.

[0066] The display device 1000 described above can be any display device that displays either motion (e.g., video) or fixed (e.g., still images) and whether text or images. More specifically, it is expected that the display device 1000 of the embodiment described above can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, TV monitors, flat panel displays, computer monitors, car displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photos, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0067] In some embodiments, Figure 2 As shown, the display panel 100 includes a base substrate 20, an array layer 21 stacked on the base substrate 20, a light-emitting functional layer 22 and an encapsulation layer 23. The light-emitting functional layer 22 is located on one side of the array layer 21. The array layer 21 includes a plurality of driving circuits 211, wherein the driving circuits 211 include a plurality of transistors TFT. The light-emitting functional layer 22 includes a plurality of light-emitting devices 10, and the plurality of light-emitting devices 10 are arranged along the second direction Y.

[0068] In some examples, such as Figure 2 As shown, multiple driving circuits 211 and multiple light emitting devices 10 can be coupled one by one. In other examples, one driving circuit 211 can be coupled to multiple light emitting devices 10, or multiple driving circuits 211 can be coupled to one light emitting device 10.

[0069] Exemplarily, in the display panel 100, the driving circuit 211 can generate a driving current. Each light emitting device 10 can emit light under the driving effect of the driving current generated by the corresponding driving circuit 211, and the lights emitted by the multiple light emitting devices 10 cooperate with each other, so that the display panel 100 realizes the display function.

[0070] In some embodiments, Figure 3 As shown, the plurality of light emitting devices 10 of the display panel 100 include a red light emitting device 101, a green light emitting device 102 and a blue light emitting device 103. Under the action of a driving voltage, the red light emitting device 101 emits red light, the green light emitting device 102 emits green light, and the blue light emitting device 103 emits blue light.

[0071] It should be noted that Figure 3 This is a simplified schematic diagram obtained after removing other film layers except the film layers related to the light emitting device in the display panel 100. Figure 3 In the figure, multiple light-emitting devices are, for example, a red light-emitting device 101, a green light-emitting device 102 and a blue light-emitting device 103. Each light-emitting device 10 includes a corresponding light-emitting layer 131 and an anode 11. Except for the light-emitting layer 131 and the anode 11, other film layers are connected to form a whole for sharing.

[0072] As mentioned in the background, in the field of organic semiconductors, OLED technology has attracted more and more attention from academia and industry, and has been successfully applied in commercial flat panel display and lighting industries. OLED light-emitting devices have the characteristics of self-luminescence. Accordingly, OLED display panels and OLED light-emitting substrates do not require backlight sources, and the panels are thin and light. At the same time, OLED light-emitting devices also have the advantages of being fully solid-state, fast response time, and a wide operating temperature range. Among them, according to the number of light-emitting units in a sub-pixel, OLED light-emitting devices can be divided into single-layer light-emitting devices and stacked light-emitting devices. The structure of stacked light-emitting devices is introduced below.

[0073] In some embodiments, Figure 4 As shown, the light emitting device 10 includes an anode 11 and a cathode 12 arranged opposite to each other, and at least two light emitting units 13 arranged between the cathode 12 and the anode 11, the at least two light emitting units 13 are stacked, and each of the at least two light emitting units 13 includes a light emitting layer 131. At this time, the light emitting device 10 is a stacked light emitting device 10, for example, a stacked OLED light emitting device 10.

[0074] Based on the above structure, the light-emitting principle of the light-emitting device 10 is: through the circuit connected by the anode 11 and the cathode 12, the anode 11 is used to inject holes into the light-emitting layer 131, and the cathode 12 is used to inject electrons into the light-emitting layer 131. The injected electrons and holes form excitons (i.e., electron-hole pairs) in the light-emitting layer 131, and the excitons return to the ground state through radiation transition and emit photons. It can be seen that in the light-emitting process of the stacked OLED light-emitting device 10, the three processes of efficient charge generation, effective charge injection, and fast charge transfer are indispensable. The above-mentioned charges are holes or electrons.

[0075] It can be understood that, on the one hand, since OLED is current-driven to emit light, under the same current density, the luminance of the stacked OLED light-emitting device 10 composed of n identical light-emitting units 13 is n times the luminance of the traditional OLED light-emitting device 10 composed of a single light-emitting unit 13. Therefore, the current efficiency of the stacked OLED light-emitting device 10 is n times that of the traditional OLED light-emitting device 10. On the other hand, OLED display and lighting equipment works at a certain brightness. Under the same luminous brightness, the current density driving the stacked OLED light-emitting device 10 is 1 / n of the current density driving the traditional OLED light-emitting device 10. Since the greater the current density driving the OLED light-emitting device 10, the faster the OLED light-emitting device 10 ages and the shorter the life, the life of the stacked OLED light-emitting device 10 will be extended. Therefore, the stacked OLED light-emitting device 10 plays an important role in the field of OLED display and lighting.

[0076] In some embodiments, Figure 4 and Figure 8 As shown, the light emitting device 10 further includes a charge generating layer 14, which is located between two adjacent light emitting units 13 of the at least two light emitting units 13; the charge generating layer 14 includes an electron generating layer 141 and a hole generating layer 142 which are stacked. The electron generating layer 141 is located on a side close to the anode 11; and the hole generating layer 142 is located on a side close to the cathode 12.

[0077] Through the charge generation layer 14, the plurality of light emitting units 13 of the stacked OLED light emitting device 10 are sequentially connected in the vertical direction of the light emitting surface. Figure 4 In the first direction X shown in FIG. 1 , the charge generation layer 14 in the stacked OLED light emitting device 10 not only connects the light emitting units 13 , but also significantly affects the process of efficient charge (hole or electron) generation, thereby significantly affecting the performance of the light emitting device 10 .

[0078] In some embodiments, Figure 4 and Figure 5As shown, each of the at least two light-emitting units 13 also includes a second functional layer 132. The second functional layer 132 is located on the side of the light-emitting layer 131 close to the cathode 12 and is configured to transmit electrons or block holes. Firstly, it can achieve effective electron injection and rapid electron transmission, and secondly, it can block holes, which is beneficial to the balance between electrons and holes during the light-emitting process.

[0079] It can be understood that, when at least two light-emitting units 13 are connected through the charge generation layer 14, the above-mentioned second functional layer 132 is located on the side of the light-emitting layer 131 close to the cathode 12, which means: when the light-emitting unit 13 is the light-emitting unit 13 close to the cathode 12 among the at least two light-emitting units 13, the second functional layer 132 is located between the light-emitting layer 131 and the cathode 12; when the light-emitting unit 13 is the other light-emitting unit 13 among the at least two light-emitting units 13 except the light-emitting unit 13 close to the cathode 12, the second functional layer 132 is located between the light-emitting layer 131 and the charge generation layer 14.

[0080] Exemplarily, the second type functional layer 132 includes any one or more of an electron injection layer 1321 , an electron transport layer 1322 and a hole blocking layer 1323 .

[0081] like Figure 4 As shown, when the second type of functional layer 132 includes an electron injection layer 1321, an electron transport layer 1322 and a hole blocking layer 1323, the second type of functional layer 132 is arranged in sequence in a direction away from the cathode 12, for example.

[0082] For example, Figure 3 As shown, when the display panel 100 includes a red light-emitting device 101 , a green light-emitting device 102 , and a blue light-emitting device 103 , the red light-emitting device 101 , the green light-emitting device 102 , and the blue light-emitting device 103 may share one or more layers of the second type functional layer 132 .

[0083] In some embodiments, Figure 4 As shown, each of the at least two light-emitting units 13 also includes a first type functional layer 133. The first type functional layer 133 is located on the side of the light-emitting layer 131 close to the anode 11 and is configured to transport holes or block electrons. Firstly, effective hole injection and rapid hole transport can be achieved. Secondly, electrons can be kept in the light-emitting layer 131 adjacent to it as much as possible, so that electrons and holes are balanced during the light-emitting process, thereby improving the light-emitting efficiency of the light-emitting layer 131.

[0084] It can be understood that, when at least two light-emitting units 13 are connected through the charge generation layer 14, the above-mentioned second functional layer 132 is located on the side of the light-emitting layer 131 close to the anode 11, which means: when the light-emitting unit 13 is the light-emitting unit 13 close to the anode 11 among the at least two light-emitting units 13, the second functional layer 132 is located between the light-emitting layer 131 and the anode 11; when the light-emitting unit 13 is the other light-emitting unit 13 among the at least two light-emitting units 13 except the light-emitting unit 13 close to the anode 11, the second functional layer 132 is located between the light-emitting layer 131 and the charge generation layer 14.

[0085] For example, Figure 4 As shown, the first type functional layer 133 includes any one or more of a hole injection layer 1331 , a hole transport layer 1332 and an electron blocking layer 1333 .

[0086] like Figure 4 As shown, when the first type of functional layer 133 includes a hole injection layer 1331, a hole transport layer 1332 and an electron blocking layer 1333, the first type of functional layer 133 is arranged in sequence in a direction away from the anode 11.

[0087] For example, Figure 3 As shown, when the display panel 100 includes a red light-emitting device 101 , a green light-emitting device 102 , and a blue light-emitting device 103 , the red light-emitting device 101 , the green light-emitting device 102 , and the blue light-emitting device 103 may share one or more layers of the first type functional layer 133 .

[0088] With the development of the organic light-emitting device 10, the stability of the light-emitting device 10 has been paid much attention, which will have a direct impact on the life of the light-emitting device 10. In addition, the different compositions of the organic materials used in the light-emitting layer 131, the first functional layer 133, and the second functional layer 132 will have a great impact on the stability of the organic light-emitting device 10. Therefore, an important factor affecting the life of the light-emitting device 10 is the stability of the organic material.

[0089] In some implementations, the material of the first functional layer 133 is an aromatic amine material, which has poor electronic stability. In long-term use, the aromatic amine material is easily attacked by electrons and decomposes, causing the first functional layer 133 to fail and fail to perform the function of transmitting holes or blocking electrons, resulting in a shortened service life of the light-emitting device 10.

[0090] Based on this, some embodiments of the present disclosure provide a light-emitting device 10, wherein the first type functional layer 133 includes an auxiliary functional layer 1334, and the material of the auxiliary functional layer 1334 includes a first functional material GF1, and the first functional material GF1 is selected from any one of the structures shown in the following general formula (I).

[0091]

[0092] Wherein, L1 is selected from any one of a single bond, a substituted or unsubstituted C6-C39 arylene group, and a substituted or unsubstituted C6-C39 heteroarylene group.

[0093] L2 is selected from any one of a substituted or unsubstituted C6-C39 arylene group and a substituted or unsubstituted C6-C39 heteroarylene group.

[0094] Ar1, Ar2 and Ar3 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboron group, a substituted or unsubstituted C6-C39 arylphosphine group and a substituted or unsubstituted C6-C39 arylsilyl group.

[0095] In the structure shown in the above general formula (I), the IA part is a phenanthroline group, and the IB part and the IC part are triarylamine groups.

[0096] Regarding the structure shown in general formula (I), the following points need to be explained:

[0097] L1 may be selected from a single bond, and, when L1 is a single bond, the nitrogen of the IB moiety and the phenanthroline group of the IC moiety are directly linked by a covalent bond.

[0098] The connection position of L1 and the phenanthroline group of the IC part shown in the general formula (I) means that L1 can be connected to any one of carbon atoms 1, 2, 3, 5, 6, 8, 9, and 10 of the phenanthroline group, that is, L1 can be connected to any one of carbon atoms 1, 2, 3, 5, 6, 8, 9, and 10 that has a substitution position.

[0099] The aryl group of Cx refers to an aryl group having x carbon (C) atoms in total. Wherein, x is a positive integer, and the same applies below. For understanding of other groups such as heteroaryl groups of Cx and aryloxy groups of Cx, please refer to the above content, and will not be repeated here.

[0100] The aryl group may be phenyl, etc. The heteroaryl group may be furyl, pyranyl, thienyl, pyridyl, etc.

[0101] Phenyl refers to the general term for the group remaining after the hydrogen atom of one carbon atom on the benzene ring is removed. Phenylene refers to the general term for the group remaining after the hydrogen atoms on two carbon atoms on the benzene ring are removed. For the understanding of other groups such as arylene and heteroarylene, please refer to the above content and will not be repeated here.

[0102] When Ar1, Ar2, and Ar3 are selected from substituted C6-C39 aryl groups, substituted C5-C60 heteroaryl groups, substituted C6-C60 aryloxy groups, substituted C6-C39 arylamine groups, substituted C6-C39 arylboron groups, substituted C6-C39 arylphosphino groups, and substituted C6-C39 arylsilyl groups, there is no limitation on the types of substituents with respect to the C6-C39 aryl groups, C5-C60 heteroaryl groups, C6-C60 aryloxy groups, C6-C39 arylamine groups, C6-C39 arylboron groups, C6-C39 arylphosphino groups, and C6-C39 arylsilyl groups.

[0103] For example, the substituents of the above-mentioned C6-C39 aryl group, C5-C60 heteroaryl group, C6-C60 aryloxy group, C6-C39 arylamine group, C6-C39 arylboryl group, C6-C39 arylphosphino group and C6-C39 arylsilyl group are, for example, hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl group, substituted or unsubstituted C2-C39 alkenyl group, substituted or unsubstituted C2-C39 alkynyl group, substituted or unsubstituted C1-C39 alkoxy group, substituted or unsubstituted C3-C39 cycloalkyl group, substituted or unsubstituted C3-C39 heterocycloalkyl group, substituted or unsubstituted C1-C39 alkylsilyl group, substituted or unsubstituted C1-C39 alkylboryl group. For the description of the alkyl group of Cx, please refer to the above description of the aryl group of Cx, which will not be repeated here.

[0104] Based on the above structure of the first functional material GF1, on the one hand, by setting the IB part and the IC part as triarylamine groups, the first functional material GF1 is a hole-type material that can be used to transport holes and block electrons. In this way, the first type functional layer 133 containing the first functional material GF1 can achieve effective hole injection and rapid hole transport. On the other hand, in the structure shown in the general formula (I), the phenanthroline group of the IA part is the part of the first functional material GF1 that serves as an electron acceptor, and the triarylamine groups of the IB part and the IC part are the parts of the first functional material GF1 that serve as electron donors. Compared with the aromatic amine material of the first type functional layer 133 in the above-mentioned implementation, the first functional material GF1 adds a phenanthroline group as an electron acceptor part. In this way, in the compound molecule of the first functional material GF1, the lowest unoccupied molecular orbital (i.e., LUMO orbital) will be distributed on the electron acceptor part (i.e., phenanthroline group), so that the electrons are limitedly distributed on the fragments corresponding to the phenanthroline group, preventing the electrons from attacking the carbon-nitrogen bond and causing the carbon-nitrogen bond to break. In this way, the electronic stability of the first functional material GF1 is effectively improved, which can improve the stability of the light-emitting device 10 and extend the service life of the light-emitting device 10.

[0105] For example, the lowest unoccupied molecular orbital (LUMO orbital) distribution diagram of the first functional material GF1 is shown in the attached figure. Figure 6 The highest occupied molecular orbital (HOMO orbital) distribution diagram of the first functional material GF1 is shown in the attached figure. Figure 7 As shown. Figure 6 It can be seen that the lowest unoccupied molecular orbital (LUMO orbital) of the first functional material GF1 is mainly distributed in the part corresponding to the phenanthroline group (ie, the part shown by K in the figure).

[0106] An exemplary structure of the first functional material GF1 in the structure represented by the general formula (I) is described below.

[0107] In some examples, when L1 is selected from phenylene, L2 is selected from Ar1 is selected from When, the structural formula of the first functional material GF1 can be shown as follows.

[0108]

[0109] It should be noted that (GF1-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0110] In the first functional material GF1 shown in the above structural formulas (GF1-1) and (GF1-2), it can be seen that the phenanthroline group in the IA part of the structure shown in the general formula (I) can be a substituted phenanthroline group. For example, in the first functional material GF1 shown in the above structural formulas (GF1-1) and (GF1-2), the IA part is a phenanthroline group substituted with phenyl.

[0111] In order to improve the molecular stability of the first functional material GF1, in some embodiments, the structure shown in the general formula (I) contains at least one deuterium. That is, the first functional material GF1 can be selected from any one of the structures shown in the following general formula (I').

[0112]

[0113] Wherein, n is a positive integer greater than or equal to 1.

[0114] Since the atomic weight of deuterium is twice that of hydrogen, the physical properties of the first functional material GF1 will change by setting up at least one deuterium in the structure shown in general formula (I). Specifically, after the first functional material GF1 is replaced by deuterium, it can effectively suppress molecular vibration, reduce bond length, increase bond energy, and improve molecular stability. In this way, the stability of the first functional material GF1 is improved.

[0115] It should be noted that the structure represented by the general formula (I) contains at least one deuterium, which means that the structure represented by the general formula (I) satisfies at least one of the following four conditions: (1) L1 is selected from one of a deuterated arylene group and a heteroarylene group; (2) L2 is selected from one of a deuterated arylene group and a heteroarylene group; (3) at least one of Ar1, Ar2 and Ar3 is selected from one of a deuterated aryl group, a heteroaryl group, an aryloxy group, an arylamine group, an arylboryl group, an arylphosphino group and an arylsilyl group; (4) the phenanthroline group is a deuterated phenanthroline group.

[0116] In some embodiments, the first functional material GF1 is selected from any one of the structures shown in the following general formula (IV).

[0117]

[0118] Wherein, X is selected from any one of O, S, N(R2) and C(R3R4).

[0119] R2, R3, R4 and Ar4 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C2-C39 alkyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C2-C39 alkyl, substituted or unsubstituted C2-C39 alkoxy ...6-C39 aryl, substituted or Any one of a substituted C6~C39 aromatic amino group, a substituted or unsubstituted C3~C39 cycloalkyl group, a substituted or unsubstituted C3~C39 heterocycloalkyl group, a substituted or unsubstituted C1~C39 alkylsilyl group, a substituted or unsubstituted C1~C39 alkylboryl group, a substituted or unsubstituted C6~C39 arylboryl group, a substituted or unsubstituted C6~C39 aromatic phosphine group and a substituted or unsubstituted C6~C39 aromatic silyl group.

[0120] It is understood that, when in the structure shown in the general formula (I), L2 is selected from Moreover, when the carbon number 10 of the phenanthroline group is replaced by Ar4, the structure shown in the general formula (I) can be transformed into the structure shown in the general formula (IV). The IB portion in the structure represented by the general formula (I) is transformed into the IB' portion in the structure represented by the general formula (IV).

[0121] Regarding the structure shown in general formula (IV), the following points need to be explained:

[0122] X is selected from any one of O, S, N(R2) and C(R3R4), wherein O is oxygen, S is sulfur, N(R2) is nitrogen substituted by R2, and C(R3R4) is carbon substituted by R3 and R4, and R3 and R4 may be the same or different.

[0123] Here, the nitrogen in the IB' portion of the structure represented by the general formula (IV) is marked as nitrogen No. 1, and the nitrogen connected to Ar2 and Ar3 is marked as nitrogen No. 2. The connection position means that nitrogen No. 1 and nitrogen No. 2 can be connected to any two of carbon Nos. 2', 3', 4', 5', 8', 9', 10', and 11', that is, nitrogen No. 1 and nitrogen No. 2 can be connected to any two carbons with substitution positions among carbon Nos. 2', 3', 4', 5', 8', 9', 10', and 11'. In other words, the carbon connected to nitrogen No. 1 and the carbon connected to nitrogen No. 2 are not the same carbon.

[0124] When R2, R3, R4 and Ar4 are selected from substituted C1-C39 alkyl, substituted C2-C39 alkenyl, substituted C2-C39 alkynyl, substituted C6-C39 aryl, substituted C5-C60 heteroaryl, substituted C6-C60 aryloxy, substituted C1-C39 alkoxy, substituted C6-C39 arylamine, substituted C3-C39 cycloalkyl, substituted C3-C39 heterocycloalkyl, substituted C1-C39 alkylsilyl, substituted C1-C39 alkylboryl, substituted C6-C39 arylboryl, substituted C6-C39 arylphosphino and substituted C6-C39 arylsilyl, the type of substituent is not limited herein.

[0125] Here, the connection position of L1 and the phenanthroline group shown in the general formula (IV) is described; the description of the aryl group of Cx and the alkyl group of Cx here can refer to the above description of the aryl group of Cx and the alkyl group of Cx; the description of the aryl group and the heteroaryl group here can refer to the above description of the aryl group and the heteroaryl group; no further details will be given here.

[0126] An exemplary structure of the first functional material GF1 in the structure represented by the general formula (IV) is described below.

[0127] In some examples, when L1 is selected from phenylene, X is selected from oxygen, and Ar1 is selected from phenyl, the structural formula of the first functional material GF1 may be as shown below.

[0128]

[0129] In some examples, when L1 is selected from phenylene, X is selected from oxygen, and Ar1 is selected from When, the structural formula of the first functional material GF1 can be shown as follows.

[0130]

[0131] In some examples, when L1 is selected from phenylene, X is selected from oxygen, and Ar1 is selected from When, the structural formula of the first functional material GF1 can be shown as follows.

[0132]

[0133] In some examples, when L1 is selected from phenylene, X is selected from sulfur, and Ar1 is selected from phenyl, the structural formula of the first functional material GF1 may be as shown below.

[0134]

[0135]

[0136] In some examples, when L1 is selected from phenylene, X is selected from sulfur, and Ar1 is selected from When, the structural formula of the first functional material GF1 can be shown as follows.

[0137]

[0138]

[0139]

[0140] In some examples, when L1 is selected from phenylene, X is selected from sulfur, and Ar1 is selected from When, the structural formula of the first functional material GF1 can be shown as follows.

[0141]

[0142] It should be noted that (GF1-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0143] It should be noted that when Ar1 is selected from When nitrogen 1 is connected to Ar1, the connection position is not limited here.

[0144] In the first functional material GF1 shown in the above structural formulas (GF1-7) to (GF1-12) and (GF1-21) to (GF1-30), it can be seen that in the structure shown in the general formula (IV), when Ar1 is When the connection position of nitrogen No. 1 to Ar1 is not limited here. Exemplarily, as shown in (GF1-11), (GF1-12), (GF1-21) and (GF1-22), nitrogen No. 1 is connected to carbon No. 4" of Ar1; or, as shown in (GF1-7) to (GF1-10) and (GF1-23) to (GF1-30), nitrogen No. 1 is connected to carbon No. 5" of Ar1.

[0145] In the first functional material GF1 shown in the above structural formulas (GF1-3) to (GF1-32), it can be seen that in the structure shown in general formula (IV), the substituent Ar4 of carbon No. 10 of the phenanthroline group can be selected from one of hydrogen, deuterium, alkyl, aryl, and cycloalkyl. Exemplarily, as shown in the above structural formulas (GF1-3) to (GF1-18) and (GF1-21) to (GF1-26), Ar4 can be selected from hydrogen or deuterium; or, as shown in the above structural formula (GF1-19), Ar4 can be selected from alkyl (deuterated methyl); or, as shown in the above structural formula (GF1-20), Ar4 can be selected from phenyl; as shown in the above structural formulas (GF1-27) to (GF1-32), Ar4 can be selected from cycloalkyl.

[0146] The above is an exemplary structure of the first functional material GF1 in the structure represented by the general formula (IV).

[0147] In order to improve the molecular stability of the first functional material GF1, in some embodiments, the structure represented by the general formula (IV) contains at least one deuterium. That is, the first functional material GF1 can be selected from any one of the structures represented by the following general formula (IV').

[0148]

[0149] Wherein, k is a positive integer greater than or equal to 1.

[0150] Since the atomic weight of deuterium is twice that of hydrogen, the physical properties of the first functional material GF1 will change by setting up at least one deuterium in the structure shown in general formula (IV). Specifically, after the first functional material GF1 is replaced by deuterium, it can effectively suppress molecular vibration, reduce bond length, increase bond energy, and improve molecular stability. In this way, the stability of the first functional material GF1 is improved.

[0151] It should be noted that the structure represented by the general formula (IV) contains at least one deuterium, which means that the structure represented by the general formula (IV) satisfies at least one of the following five conditions: (1) L1 is selected from one of deuterated arylene groups and heteroarylene groups; (2) at least one of Ar1, Ar2 and Ar3 is selected from one of deuterated aryl groups, heteroaryl groups, aryloxy groups, arylamine groups, arylboryl groups, arylphosphino groups and arylsilyl groups; (3) the phenanthroline group is a deuterated phenanthroline group; (4) Ar4 is selected from one of deuterated and deuterated alkyl groups, alkenyl groups, alkynyl groups, aryl groups, heteroaryl groups, aryloxy groups, alkoxy groups, arylamine groups, cycloalkyl groups, heterocycloalkyl groups, alkylsilyl groups, alkylboryl groups, arylboryl groups, arylphosphino groups and arylsilyl groups. (5) The IB' portion contains at least one deuterium.

[0152] Illustratively, in the first functional material GF1 shown in the above structural formulas (GF1-3), (GF1-5), (GF1-15), and (GF1-17), Ar4 is deuterium.

[0153] Illustratively, in the first functional material GF1 as shown in the above structural formula (GF1-19), Ar4 is a deuterated methyl group.

[0154] Illustratively, in the first functional material GF1 shown in the above structural formulas (GF1-4), (GF1-6), (GF1-7) to (GF1-14), (GF1-16), (GF1-18), (GF1-20) to (GF1-30), among carbons 1, 2, 3, 5, 6, 8, and 9 of the phenanthroline group, except the carbon connected to nitrogen 1, the remaining carbons are all provided with deuterium substituents; at this time, k is a positive integer greater than or equal to 6.

[0155] The above is a description of the structure of the material of the auxiliary functional layer 1334 (ie, the first functional material GF1 ). The following describes the position of the auxiliary functional layer 1334 in the light emitting device 10 .

[0156] In some embodiments, Figure 4 As shown, the first type functional layer 133 is located on the side of the light emitting layer 131 close to the anode 11; the auxiliary functional layer 1334 is configured to block electrons.

[0157] As can be seen from the above, the first functional material GF1 is a hole-type material, which can be used to transport holes and block electrons. In the case where the first functional layer 133 includes an auxiliary functional layer 1334, and the material of the auxiliary functional layer 1334 includes the first functional material GF1, the auxiliary functional layer 1334 can play a role in blocking electrons by arranging the first functional layer 133 on the side of the light-emitting layer 131 close to the anode 11. Moreover, when the auxiliary functional layer 1334 including the first functional material GF1 blocks electrons and is attacked by electrons, the phenantheline group in the structure of the first functional material GF1 can act as an electron acceptor, so that the electrons are limitedly distributed on the fragments corresponding to the phenantheline group, preventing the electrons from attacking the carbon-nitrogen bond and causing the carbon-nitrogen bond to break. In this way, compared with the material of the first functional layer 133 of the aromatic amine type in the above implementation, the electronic stability of the first functional layer 133 is effectively improved, so that the stability of the light-emitting device 10 can be improved and the service life of the light-emitting device 10 can be extended.

[0158] In some embodiments, the first type functional layer 133 further includes an electron blocking layer 1333 stacked with the auxiliary functional layer 1334, and the material of the electron blocking layer 1333 includes a second functional material GF2, and the second functional material GF2 is selected from any one of the structures shown in the following general formula (II).

[0159]

[0160] Wherein, L3 is selected from any one of a single bond, a substituted or unsubstituted C3-C30 arylene group, and a substituted or unsubstituted C3-C30 heteroarylene group.

[0161] Ar5 and Ar6 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboron group, a substituted or unsubstituted C6-C39 arylphosphine group and a substituted or unsubstituted C6-C39 arylsilyl group.

[0162] Ar7 and R1 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted Any one of a C6-C39 aromatic amine group, a substituted or unsubstituted C3-C39 cycloalkyl group, a substituted or unsubstituted C3-C39 heterocycloalkyl group, a substituted or unsubstituted C1-C39 alkylsilyl group, a substituted or unsubstituted C1-C39 alkylboryl group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 aromatic phosphine group and a substituted or unsubstituted C6-C39 aromatic silyl group.

[0163] m is a positive integer greater than or equal to 1.

[0164] In the structure represented by the above general formula (II), the IIA part is fluorene, and the IIB part is a triarylamine group.

[0165] Regarding the structure shown in general formula (II), the following points need to be explained:

[0166] L3 may be selected from a single bond, and when L3 is a single bond, carbon number 9 of the fluorene of the IIA part and the nitrogen of the IIB part are directly connected by a covalent bond.

[0167] The connection position of R1 and the fluorene of part IIA shown in the general formula (II) means that R1 can be connected to any one of carbon atoms 2, 3, 5, 6, 10, 11, 12, and 13, that is, R1 can be connected to any one of carbon atoms 2, 3, 5, 6, 10, 11, 12, and 13 that has a substituted position.

[0168] When Ar5 and Ar6 are selected from substituted C6-C39 aryl groups, substituted C5-C60 heteroaryl groups, substituted C6-C60 aryloxy groups, substituted C6-C39 arylamine groups, substituted C6-C39 arylboron groups, substituted C6-C39 arylphosphino groups and substituted C6-C39 arylsilyl groups, the types of substituents are not limited here.

[0169] Illustratively, the substituents of the above-mentioned C6-C39 aryl group, C5-C60 heteroaryl group, C6-C60 aryloxy group, C6-C39 arylamine group, C6-C39 arylboryl group, C6-C39 arylphosphino group and C6-C39 arylsilyl group are, for example, hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl group, substituted or unsubstituted C2-C39 alkenyl group, substituted or unsubstituted C2-C39 alkynyl group, substituted or unsubstituted C1-C39 alkoxy group, substituted or unsubstituted C3-C39 cycloalkyl group, substituted or unsubstituted C3-C39 heterocycloalkyl group, substituted or unsubstituted C1-C39 alkylsilyl group, substituted or unsubstituted C1-C39 alkylboryl group.

[0170] The description of the aryl group of Cx and the alkyl group of Cx here can refer to the above description of the aryl group of Cx and the alkyl group of Cx; the description of the aryl group and the heteroaryl group here can refer to the above description of the aryl group and the heteroaryl group; the description of the arylene group and the heteroarylene group here can refer to the above description of the arylene group and the heteroarylene group, which will not be repeated here.

[0171] Based on the above structure of the second functional material GF2, on the first hand, the second functional material GF2 and the first functional material GF1 have matching energy levels and mobility. In this way, when the auxiliary functional layer 1334 containing the first functional material GF1 and the electron blocking layer 1333 containing the second functional material GF2 are stacked, the first functional material GF1 and the second functional material GF2 can be used in combination, which is beneficial to the transmission of holes in the first functional layer 133. On the second hand, by introducing a triarylamine group on the carbon No. 9 of the fluorene in the IIA part, the structural stereoscopic property of the second functional material GF2 can be improved, so that the second functional material GF2 is not easy to crystallize; in this way, the electron blocking layer 1333 containing the second functional material GF2 is more stable, and the life of the light-emitting device 10 is improved. On the third hand, by selecting the second functional material GF2 from any one of the structures shown in the general formula (II), the refractive index of the second functional material GF2 is reduced, which is beneficial to improve the light extraction efficiency.

[0172] In some embodiments, the refractive index of the second functional material GF2 at 530 nm ranges from 1.6 to 1.9. For example, the refractive index of the second functional material GF2 at 530 nm can be 1.6, 1.7, 1.8, or 1.9.

[0173] An exemplary structure of the second functional material GF2 in the structure represented by the general formula (II) is described below.

[0174] In some examples, when L3 is selected from phenylene, Ar7 is selected from phenyl, and one of Ar5 and Ar6 is phenyl, the structural formula of the second functional material GF2 can be as shown below.

[0175]

[0176]

[0177] In some examples, when L3 is selected from phenylene, Ar7 is selected from phenyl, and one of Ar5 and Ar6 is a biphenyl group, the structural formula of the second functional material GF2 can be as shown below.

[0178]

[0179] In some examples, when L3 is selected from When Ar7 is selected from phenyl, the structural formula of the second functional material GF2 can be as shown below.

[0180]

[0181] It should be noted that (GF2-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0182] In order to improve the molecular stability of the second functional material GF2, in some embodiments, at least one of Ar5, Ar6, Ar7, L3 and R1 contains deuterium.

[0183] Since the atomic weight of deuterium is twice that of hydrogen, the physical properties of the second functional material GF2 will change by setting up at least one deuterium in the structure shown in general formula (II). Specifically, after the second functional material GF2 is replaced by deuterium, it can effectively suppress molecular vibration, reduce bond length, increase bond energy, and improve molecular stability. In this way, the stability of the second functional material GF2 is improved.

[0184] It should be noted that at least one of Ar5, Ar6, Ar7, L3 and R1 contains deuterium, which means that the structure represented by the general formula (II) satisfies at least one of the following four conditions: (1) at least one of Ar7 and R1 is a deuterated substituent; (2) at least one of Ar7 and R1 is a deuterated alkyl, alkenyl, alkynyl, aryl, heteroaryl, aryloxy, alkoxy, arylamine, cycloalkyl, heterocycloalkyl, alkylsilyl, alkylboryl, arylboryl, arylphosphino and arylsilyl group; (3) L3 is a deuterated arylene and heteroarylene group; (4) at least one of Ar5 and Ar6 is a deuterated aryl, heteroaryl, aryloxy, arylamine, arylboryl, arylphosphino and arylsilyl group.

[0185] An exemplary structure of the second functional material GF2 when at least one of Ar5, Ar6, Ar7, L3 and R1 contains deuterium is described below.

[0186] In some examples, when the deuterium atoms in the structure of the second functional material GF2 are all located in L3, and L3 is selected from tetradeuterated phenylene, and Ar7 is selected from phenyl, the structural formula of the second functional material GF2 can be as shown below.

[0187]

[0188]

[0189] In some examples, when the deuterium atom in the structure of the second functional material GF2 is located in L3 and Ar7, and L3 and Ar7 are both selected from tetradeuterated phenylene, the structural formula of the second functional material GF2 can be as shown below.

[0190]

[0191] In some examples, when the deuterium atom in the structure of the second functional material GF2 is located in L3 and Ar5, and L3 is selected from tetradeuterated phenylene, and Ar5 is selected from (containing six deuterium atoms) and Ar7 is selected from phenyl, the structural formula of the second functional material GF2 can be shown as follows.

[0192]

[0193]

[0194] It should be noted that (GF2-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0195] The above is a description of the structure of the material of the electron blocking layer 1333 (ie, the second functional material GF2 ). The following describes the location of the electron blocking layer 1333 in the light emitting device 10 .

[0196] In some embodiments, Figure 4 As shown, the electron blocking layer 1333 , located on a side of the auxiliary function layer 1334 away from the light emitting layer 131 , is configured to block electrons.

[0197] As can be seen from the above, the first functional material GF1 contains phenanthroline groups, and compared with the second functional material GF2, the electronic stability of the first functional material GF1 is relatively higher, that is, the first functional material GF1 can be arranged at a position in the first functional layer 133 that is easily attacked by electrons to play the function of blocking electrons. It can be understood that the electrons in the light-emitting device 10 migrate from the cathode 12 to the light-emitting layer 131, and some electrons migrate from the light-emitting layer 131 to the first functional layer 133. By setting the electron blocking layer 1333 on the side of the auxiliary functional layer 1334 away from the light-emitting layer 131, the auxiliary functional layer 1334 can be closer to the light-emitting layer 131. In this way, the first functional material GF1 of the auxiliary functional layer 1334 can block electrons, reduce the amount of electrons in other film layers of the first functional layer 133, and prevent the materials of other film layers in the first functional layer 133 from being attacked by electrons and cracked, which can improve the stability of the light-emitting device 10 and extend the service life of the light-emitting device 10.

[0198] For example, Figure 4 As shown, the electron blocking layer 1333 is located on a side of the auxiliary functional layer 1334 away from the light emitting layer 131 , and is in direct contact with the auxiliary functional layer 1334 .

[0199] In some embodiments, the first type functional layer 133 further includes a hole transport layer 1332 stacked with the electron blocking layer 1333, and the material of the hole transport layer 1332 includes a third functional material GF3, and the third functional material GF3 is selected from any one of the structures shown in the following general formula (II).

[0200]

[0201] Wherein, L4 is selected from any one of a substituted or unsubstituted C3-C30 arylene group and a substituted or unsubstituted C3-C30 heteroarylene group.

[0202] Ar8, Ar9, Ar 10 and Ar 11 The same or different, each independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C1-C39 alkoxy group, a substituted or unsubstituted C6-C39 arylamine group and a substituted or unsubstituted C6-C39 arylsilyl group.

[0203] Regarding the structure shown in general formula (III), the following points need to be explained:

[0204] When Ar8, Ar9, Ar 10 ,Ar 11When the substituent is selected from a substituted C6-C39 aryl group, a substituted C5-C60 heteroaryl group, a substituted C6-C60 aryloxy group, a substituted C1-C39 alkoxy group, a substituted C6-C39 arylamine group and a substituted C6-C39 arylsilyl group, the type of the substituent is not limited herein.

[0205] Illustratively, the substituents of the above-mentioned C6-C39 aryl group, C5-C60 heteroaryl group, C6-C60 aryloxy group, C1-C39 alkoxy group, C6-C39 arylamine group and C6-C39 arylsilyl group are, for example, hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl group, substituted or unsubstituted C2-C39 alkenyl group, substituted or unsubstituted C2-C39 alkynyl group, substituted or unsubstituted C1-C39 alkoxy group, substituted or unsubstituted C3-C39 cycloalkyl group, substituted or unsubstituted C3-C39 heterocycloalkyl group, substituted or unsubstituted C1-C39 alkylsilyl group, substituted or unsubstituted C1-C39 alkylboryl group.

[0206] The description of the aryl group of Cx and the alkyl group of Cx here can refer to the above description of the aryl group of Cx and the alkyl group of Cx; the description of the aryl group and the heteroaryl group here can refer to the above description of the aryl group and the heteroaryl group; the description of the arylene group and the heteroarylene group here can refer to the above description of the arylene group and the heteroarylene group, which will not be repeated here.

[0207] Based on the above structure of the third functional material GF3, the third functional material GF3, the second functional material GF2 and the first functional material GF1 have matching energy levels and mobility. In this way, when the auxiliary functional layer 1334 containing the first functional material GF1, the electron blocking layer 1333 containing the second functional material GF2, and the hole transport layer 1332 containing the third functional material GF3 are stacked, the first functional material GF1, the second functional material GF2 and the third functional material GF3 can be used in combination, which is conducive to the transmission of holes in the first functional layer 133.

[0208] In some embodiments, Ar8, Ar9, Ar 10 and Ar 11 Of these, at least one is different from the other three.

[0209] It is understandable that when Ar8, Ar9, Ar 10 and Ar 11 When at least one of the three is different from the other three, the third functional material GF3 forms an asymmetric structure. Compared with Ar8, Ar9, Ar 10 ,Ar 11When a symmetrical structure is formed at the same time, the glass transition temperature Tg of the third functional material GF3 can be increased, thereby improving the thermal stability of the material and extending the life of the light-emitting device 10.

[0210] It should be noted that Ar8, Ar9, Ar 10 and Ar 11 At least one of them is different from the other three, that is, Ar8, Ar9, Ar 10 and Ar 11 The number of groups with the same structure is less than or equal to three.

[0211] An exemplary structure of the third functional material GF3 in the structure represented by the general formula (III) is introduced below.

[0212] In some examples, when L4 is selected from biphenylene, Ar8, Ar9, Ar 10 ,Ar 11 When three of them are phenyl groups, the structural formula of the third functional material GF3 can be shown as follows.

[0213]

[0214]

[0215] In some examples, when L4 is selected from biphenylene, Ar8, Ar9, Ar 10 ,Ar 11 When two of them are phenyl groups and the two phenyl groups are connected to different nitrogen atoms, the structural formula of the third functional material GF3 can be as shown below.

[0216]

[0217]

[0218]

[0219] In some examples, when L4 is selected from biphenylene, Ar8, Ar9, Ar 10 ,Ar 11 When one of them is phenyl, the structural formula of the third functional material GF3 can be shown as follows.

[0220]

[0221] In some examples, when L4 is selected from a phenanthryl group, Ar8, Ar9, Ar 10 ,Ar 11 When one of them is phenyl, the structural formula of the third functional material GF3 can be shown as follows.

[0222]

[0223] It should be noted that (GF3-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0224] It should be noted that in the structure shown in the general formula (III), nitrogen and Ar8, Ar9, Ar 10 ,Ar 11 The connection position is not limited here.

[0225] In the third functional material GF3 shown in the above structural formulas (GF3-1) to (GF3-3), (GF3-9) to (GF3-20), (GF3-22) to (GF3-24), it can be seen that in the structure shown in general formula (III), when Ar8, Ar9, Ar 10 or Ar 11 When it is biphenyl, nitrogen and The connection position of the biphenyl group is not limited here. For example, as shown in (GF3-3), (GF3-12), and (GF3-19), the nitrogen is connected to the carbon No. 1 of the biphenyl group; or, as shown in (GF3-2), (GF3-9), (GF3-11), (GF3-18), (GF3-19), and (GF3-20), the nitrogen is connected to the carbon No. 2 of the biphenyl group; or, as shown in (GF3-1), (GF3-10) to (GF3-17), (GF3-22) to (GF3-24), the nitrogen is connected to the carbon No. 3 of the biphenyl group.

[0226] In the third functional material GF3 shown in the above structural formulas (GF3-4), (GF3-5), (GF3-9), (GF3-13), (GF3-14), (GF3-20), (GF3-23), and (GF3-24), it can be seen that in the structure shown in general formula (III), when Ar8, Ar9, Ar 10 or Ar 11 for When nitrogen and The connection position of is not limited here. For example, as shown in (GF3-4), (GF3-13), (GF3-20), (GF3-23), (GF3-24), nitrogen is connected to carbon No. 1; or, as shown in (GF3-9), (GF3-14), (GF3-5), nitrogen is connected to carbon No. 2.

[0227] In the third functional material GF3 shown in the above structural formulas (GF3-6), (GF3-7), (GF3-15), and (GF3-16), it can be seen that in the structure shown in general formula (III), when Ar8, Ar9, Ar10, or Ar11 is When nitrogen and The connection position of is not limited here. For example, as shown in (GF3-7) and (GF3-16), the nitrogen is connected to carbon No. 2; or, as shown in (GF3-6) and (GF3-15), the nitrogen is connected to carbon No. 4.

[0228] In order to improve the molecular stability of the third functional material GF3, in some embodiments, Ar8, Ar9, Ar 10 ,Ar 11 At least one of L1 and L4 contains deuterium.

[0229] Since the atomic weight of deuterium is twice that of hydrogen, the physical properties of the third functional material GF3 will change by setting up at least one deuterium in the structure shown in general formula (III). Specifically, after the third functional material GF3 is replaced by deuterium, it can effectively suppress molecular vibration, reduce bond length, increase bond energy, and improve molecular stability. In this way, the stability of the third functional material GF3 is improved.

[0230] It should be noted that Ar8, Ar9, Ar 10 ,Ar 11 At least one of Ar8, Ar9, Ar10, Ar11, Ar12, Ar13, Ar14, Ar15, Ar16, Ar17, Ar18, Ar19, Ar20, Ar21, Ar22, Ar23, Ar24, Ar25, Ar26, Ar27, Ar28, Ar29, Ar30, Ar31, Ar32, Ar33, Ar34, Ar35, Ar36, Ar37, Ar38, Ar39, Ar40, Ar41, Ar42, Ar43, Ar44 10 and Ar 11 Among them, at least one is a deuterated aryl group, a heteroaryl group, an aryloxy group, an alkoxy group, an arylamine group and an arylsilyl group.

[0231] The following introduces Ar8, Ar9, Ar 10 ,Ar 11 An exemplary structure of the third functional material GF3 when at least one of L1 and L4 contains deuterium.

[0232] In some examples, when the deuterium atoms in the structure of the third functional material GF3 are located at Ar8, Ar9, Ar 10 and Ar 11 and the deuterated substituent is When, the structural formula of the third functional material GF3 can be shown as follows.

[0233]

[0234]

[0235] In some examples, when in the structure of the third functional material GF3, L4 is tetradeuterated biphenyl, Ar8, Ar9, Ar 10 and Ar 11 One of the When the deuterium atom of the third functional material GF3 is located between L4 and Ar8, Ar9, Ar 10 and Ar 11 When one of the above is used, the structural formula of the third functional material GF3 can be shown as follows.

[0236]

[0237] It should be noted that (GF3-x) in the above structural formula is a synonym for each structural formula and is not a part of the structural formula structure, where x is a positive integer.

[0238] In some embodiments, Figure 4 As shown, the hole transport layer 1332 is located on the side of the electron blocking layer 1333 away from the light emitting layer 131 and is configured to transport holes.

[0239] When the hole transport layer 1332 is located on the side of the electron blocking layer 1333 away from the light emitting layer 131, the auxiliary functional layer 1334, the electron blocking layer 1333, and the hole transport layer 1332 are sequentially arranged in a direction away from the light emitting layer 131. Since the third functional material GF3, the second functional material GF2, and the first functional material GF1 have matching energy levels and mobilities, by sequentially arranging the auxiliary functional layer 1334, the electron blocking layer 1333, and the hole transport layer 1332 in a direction away from the light emitting layer 131, holes from the anode 11 can be injected into the light emitting layer 131 by sequentially passing through the hole transport layer 1332, the electron blocking layer 1333, and the auxiliary functional layer 1334 under the action of the driving voltage. At the same time, the electrons migrated out from the light-emitting layer 131 will first pass through the auxiliary functional layer 1334, and then enter the electron blocking layer 1333 and the hole transport layer 1332. Since the electronic stability of the first functional material GF1 in the auxiliary functional layer 1334 is relatively high, it can block the electrons, thereby reducing the amount of electrons in the electron blocking layer 1333 and the hole transport layer 1332, preventing the materials of the electron blocking layer 1333 and the hole transport layer 1332 from being attacked by electrons and cracking, thereby improving the stability of the light-emitting device 10 and extending the service life of the light-emitting device 10.

[0240] For example, Figure 4 As shown, the hole transport layer 1332 is located on a side of the electron blocking layer 1333 away from the light emitting layer 131 , and is in direct contact with the electron blocking layer 1333 .

[0241] The following uses the first functional material GF1 shown in the structural formula (GF1-4) as an example to introduce the synthesis process of the first functional material GF1, the second functional material GF2, and the third functional material GF3.

[0242] In the related art, carbon-carbon coupling reaction and carbon-nitrogen coupling reaction are widely used in the synthesis of organic materials, and examples of carbon-carbon coupling reaction include Suzuki coupling reaction, Negishi coupling reaction, Yamamoto coupling reaction, Grignard coupling reaction, Stille coupling reaction, and Heck coupling reaction. Examples of carbon-nitrogen coupling reaction include Buchwald coupling reaction, Ullmann coupling, silylation reaction, phosphating reaction, borylation reaction, and polycondensation reaction.

[0243] The above reaction is, for example, shown in the following reaction formulas (A) and (B):

[0244]

[0245] It should be noted that the catalyst of the general reaction formula (A) is Pb2(dba)3 (tridibenzylideneacetone dipalladium), P(t-Bu)3 (tri(tert-butyl)phosphine) and NaOt-Bu (sodium tert-butoxide), and the reaction solvent is toluene. The catalyst of the general reaction formula (B) is lead (Pb). X is bromine or iodine. Ar d ,Ar b ,Ar c , R b , R c is a group to be connected by coupling reaction.

[0246] Exemplarily, based on the above reaction formulae (A) and (B), the method for preparing the first functional material (GF1-4) includes steps S1 to S3.

[0247]

[0248] S1: 20mmol of compound A, 12mmol of compound B, 1.16g (1mmol) of tetrakis (triphenylphosphine) palladium (Pd (PPh3) 4) and 2.5g (18mmol) of potassium carbonate (K2CO3) were dissolved in a mixed solution of 240ml of tetrahydrofuran (THF) and water (H2O) (the volume ratio of tetrahydrofuran and water was 2:1), and the obtained solution was stirred at 70°C for 5 hours. The reaction solution was then cooled to room temperature, 160ml of water was added thereto, and the obtained solution was extracted three times with 200ml of ether. The obtained organic layer was then dried with magnesium sulfate, and the solvent was evaporated to obtain a crude product. The crude product was purified by silica gel column chromatography to obtain intermediate C with a yield of 74%.

[0249]

[0250] S1: Compound D (15 mmol) and compound E (17 mmol) were dissolved in 50 ml of toluene, and catalysts Pd2(dba)3 (0.15 mmol), P(t-Bu) 3( 0.8mmol), NaOt-Bu (45mmol). After addition, the reaction temperature was slowly raised to 110°C, and the mixture was stirred for 10h. Distilled water was then added to the reaction solution and the reaction solution was extracted with ethyl acetate. The extracted organic layer was then dried over magnesium sulfate, and the solvent was removed using a rotary evaporator. The remaining material was purified by column chromatography to obtain compound F with a yield of 80%.

[0251]

[0252] S3: After intermediate C (15mmol) and intermediate F (15mmol) were dissolved in 50ml toluene, catalyst Pd2(dba)3 (0.15mmol), P(t-Bu)3 (0.8mmol), NaOt-Bu (45mmol) were added under nitrogen atmosphere. After addition, the reaction temperature was slowly raised to 110°C, and the mixture was stirred for 10h. Distilled water was then added to the reaction solution and the reaction solution was extracted with ethyl acetate. The organic layer extracted was then dried with magnesium sulfate, and a rotary evaporator was used to remove the solvent. The remaining material was purified by column chromatography to obtain the most product (GF1-4) with a yield of 75%.

[0253] The first ionization energies of the first functional material GF1, the second functional material GF2, and the third functional material GF3 are introduced below.

[0254] In some embodiments, the first ionization potential IP (GF1) of the first functional material GF1 is greater than or equal to the first ionization potential IP (GF2) of the second functional material GF2; the first ionization potential IP (GF2) of the second functional material GF2 is greater than or equal to the first ionization potential IP (GF3) of the third functional material GF3.

[0255] That is, the first ionization potential IP(GF1) of the first functional material GF1, the first ionization potential IP(GF2) of the second functional material GF2, and the first ionization potential IP(GF3) of the third functional material GF3 satisfy: IP(GF1)≥IP(GF2)≥IP(GF3).

[0256] It can be understood that the HOMO energy level difference between the materials of the two adjacent layers in the above-mentioned first type functional layer 133 (i.e., the HOMO energy level difference between the first functional material GF1 and the second functional material GF2, and the HOMO energy level difference between the second functional material GF2 and the third functional material GF3) characterizes the energy that the external electric field needs to overcome when driving hole transmission. There is a corresponding relationship between the first ionization potential IP and the HOMO energy level. Therefore, by setting IP(GF1)≥IP(GF2)≥IP(GF3), when holes are transmitted from the hole transport layer 1332 to the electron blocking layer 1333 and from the electron blocking layer 1333 to the auxiliary functional layer 1334, the required external electric field is relatively small, that is, the voltage driving the light-emitting device 10 to emit light is relatively low. In this way, the driving voltage of the light-emitting device 10 can be reduced, thereby reducing the power consumption of the light-emitting device 10.

[0257] Exemplarily, the first ionization potential IP(GF1) of the first functional material GF1 is equal to the first ionization potential IP(GF2) of the second functional material GF2; the first ionization potential IP(GF2) of the second functional material GF2 is equal to the first ionization potential IP(GF3) of the third functional material GF3.

[0258] In some embodiments, a difference between a first ionization potential IP(GF1) of the first functional material GF1 and a first ionization potential IP(GF2) of the second functional material GF2 is less than or equal to 0.2 eV.

[0259] That is, the first ionization potential IP(GF1) of the first functional material GF1 and the first ionization potential IP(GF2) of the second functional material GF2 satisfy: IP(GF1)-IP(GF2)≤0.2 eV.

[0260] By such an arrangement, when holes are transferred from the electron blocking layer 1333 to the auxiliary functional layer 1334 , the required external electric field is relatively small, so that the voltage driving the light-emitting device 10 to emit light is relatively low, which can reduce the driving voltage of the light-emitting device 10 and further reduce the power consumption of the light-emitting device 10 .

[0261] For example, the difference between the first ionization potential IP(GF1) of the first functional material GF1 and the first ionization potential IP(GF2) of the second functional material GF2 may be 0.2 eV, 0.1 eV, or 0.05 eV.

[0262] In some embodiments, a difference between a first ionization potential IP(GF2) of the second functional material GF2 and a first ionization potential IP(GF3) of the third functional material GF3 is less than or equal to 0.2 eV.

[0263] That is, the first ionization potential IP(GF2) of the second functional material GF2 and the first ionization potential IP(GF3) of the third functional material GF3 satisfy: IP(GF2)-IP(GF3)≤0.2 eV.

[0264] By such an arrangement, when holes are transferred from the hole transport layer 1332 to the electron blocking layer 1333, the required external electric field is relatively small, so that the voltage driving the light-emitting device 10 to emit light is relatively low, which can reduce the driving voltage of the light-emitting device 10 and further reduce the power consumption of the light-emitting device 10.

[0265] For example, the difference between the first ionization potential IP(GF2) of the second functional material GF2 and the first ionization potential IP(GF3) of the third functional material GF3 may be 0.2 eV, 0.1 eV, or 0.05 eV.

[0266] In some embodiments, a difference between a first ionization potential IP(GF1) of the first functional material GF1 and a first ionization potential IP(GF3) of the third functional material GF3 is less than or equal to 0.3 eV.

[0267] That is, the first ionization potential IP(GF1) of the first functional material GF1 and the first ionization potential IP(GF3) of the third functional material GF3 satisfy: IP(GF1)-IP(GF3)≤0.3 eV.

[0268] By such an arrangement, when holes are transferred from the hole transport layer 1332 to the auxiliary functional layer 1334 , the required external electric field is relatively small, so that the voltage driving the light-emitting device 10 to emit light is relatively low, which can reduce the driving voltage of the light-emitting device 10 and further reduce the power consumption of the light-emitting device 10 .

[0269] For example, the difference between the first ionization potential IP(GF1) of the first functional material GF1 and the first ionization potential IP(GF3) of the third functional material GF3 may be 0.3 eV, 0.2 eV, or 0.1 eV.

[0270] The thicknesses of the auxiliary function layer 1334 , the electron blocking layer 1333 , and the hole transport layer 1332 are introduced below.

[0271] In some embodiments, Figure 4 As shown, the thickness d2 of the electron blocking layer 1333 is greater than or equal to the thickness d1 of the auxiliary function layer 1334. That is, d2≥d1.

[0272] Since the hole migration performance of the first functional material GF1 is relatively poor, if the auxiliary functional layer 1334 containing the first functional material GF1 is thick, it is not conducive to the effective injection of holes and the balance of electrons and holes in the light-emitting process. Therefore, by setting d2≥d1, the thickness d1 of the auxiliary functional layer 1334 can be relatively small, holes can be effectively injected, and the light-emitting efficiency can be improved.

[0273] In some embodiments, Figure 4 As shown, the thickness d1 of the auxiliary function layer 1334 ranges from 5 nm to 50 nm.

[0274] By such arrangement, the thickness d1 of the auxiliary functional layer 1334 is relatively small, so that holes can be effectively injected, which is beneficial to the balance between electrons and holes during the light-emitting process and can improve the light-emitting efficiency.

[0275] Exemplarily, the thickness d1 of the auxiliary function layer 1334 may be 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

[0276] In some embodiments, Figure 4 As shown, the thickness d2 of the electron blocking layer 1333 ranges from 10 nm to 55 nm.

[0277] By configuring in this way, the thickness d2 of the electron blocking layer 1333 is reasonably designed, so that holes can be effectively injected while electrons can be effectively blocked.

[0278] Exemplarily, the thickness d2 of the electron blocking layer 1333 may be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, or 55 nm.

[0279] In some embodiments, Figure 4 As shown, the thickness d3 of the hole transport layer 1332 ranges from 50 nm to 200 nm.

[0280] Since the hole transport layer 1332 has good hole transport performance, the value range of the thickness d3 of the hole transport layer 1332 is set to 50nm~200nm. The thickness d3 of the hole transport layer 1332 is relatively large, which can effectively inject holes, is beneficial to the balance between electrons and holes in the light-emitting process, and can improve the light-emitting efficiency.

[0281] Illustratively, the thickness d3 of the hole transport layer 1332 may be 50 nm, 70 nm, 80 nm, 100 nm, 150 nm, or 200 nm.

[0282] In some embodiments, when the charge generation layer 14 includes the electron generation layer 141 and the hole generation layer 142 which are stacked, the material of the hole generation layer 142 includes the third functional material GF3.

[0283] like Figure 8 As shown, in some implementations, the hole generation layer 142 and the hole transport layer 1332 of the adjacent light emitting unit 13 are stacked and directly contacted. In this case, the hole generation layer 142 includes the third functional material GF3, so that the hole generation layer 142 and the hole transport layer 1332 both contain the third functional material GF3, and the material matching of the two film layers is better, which is conducive to the effective injection of holes and can improve the luminous efficiency.

[0284] Exemplarily, the material of the hole generating layer 142 includes the third functional material GF3 and a P-type dopant.

[0285] In some embodiments, Figure 8 As shown, the first type functional layer 133 further includes a hole injection layer 1331 , which is located on a side of the hole transport layer 1332 away from the electron blocking layer 1333 ; the material of the hole injection layer 1331 includes a third functional material GF3.

[0286] The hole injection layer 1331 may be configured to reduce the hole injection barrier and improve the hole injection efficiency. Figure 8 As shown, the hole injection layer 1331 and the hole transport layer 1332 of the adjacent light emitting unit 13 are stacked and in direct contact. The hole injection layer 1331 includes the third functional material GF3, so that the hole injection layer 1331 and the hole transport layer 1332 both contain the third functional material GF3, and the material matching of the two film layers is better, which is conducive to the effective injection of holes and can improve the luminous efficiency.

[0287] Exemplarily, the material of the hole injection layer 1331 includes the third functional material GF3 and a P-type dopant.

[0288] The above is a description of the structure and materials of each film layer of the light-emitting device 10 including the first functional layer 133. It can be seen from the above that some embodiments of the present disclosure can achieve the purpose of improving the stability of the light-emitting device 10. The following introduces another effect that can be achieved when the first functional material GF1, the second functional material GF2, and the third functional material GF3 are combined and applied to the first functional layer 133.

[0289] In some implementations, such as Figure 3As shown, in order to increase the injection of holes, a P-type dopant (P-doping material) is added to the electron blocking layer 1333 of the OLED light-emitting device 10. However, when this is set, lateral leakage will occur and color crosstalk will occur, that is, when the blue light-emitting device 103 is turned on, the green light-emitting device 102 will emit accompanying light, resulting in poor color purity of the OLED light-emitting device 10, a more serious color mixing effect, and a poor display effect. When the P-type dopant is not added to the electron blocking layer 1333 of the green light-emitting device 102, although the problem of lateral leakage is solved, the power consumption of the green light-emitting device 102 will increase.

[0290] In some embodiments, the light emitting layer 131 of each of the at least two light emitting units 13 is configured to emit green light. In this case, the light emitting device 10 is a green light emitting device 102 .

[0291] By using a combination of the first functional material GF1, the second functional material GF2, and the third functional material GF3 in the first type functional layer 133 of the green light-emitting device 102, and arranging the auxiliary functional layer 1334 containing the first functional material GF1, the electron blocking layer 1333 containing the second functional material GF2, and the hole transport layer 1332 containing the third functional material GF3 in sequence in a direction away from the light-emitting layer 131, the lateral current can be reduced, and lateral leakage between the blue light-emitting device 103 and the green light-emitting device 102 can be avoided to cause color crosstalk, thereby improving the display effect of the OLED display panel 100.

[0292] In order to objectively evaluate the technical effects of the embodiments of the present disclosure, the technical solutions provided by the present disclosure will be described in detail and exemplarily through the following experimental examples and comparative examples.

[0293] The following examples measure and compare the reorganization energy (ROE) and the first ionization potential (IP) of the first functional material GF1 and the second functional material GF2.

[0294] In the following examples, the calculation method of reorganization energy (ROE) is the same, and the calculation method of first ionization potential (IP) is the same, and both are calculated using molecular computational modeling software Spartan, and the calculation conditions are: DFT, B3LYP, 6-31g**. The calculation results are shown in Table 1 below.

[0295] Table 1

[0296] Compound ROE IP GF1-4 0.13 4.89 GF 1-10 0.14 4.88 GF 1-1 0.13 4.82 GF 1-2 0.18 4.80 GF 2-15 0.13 4.78 GF 2-20 0.16 4.79 GF 2-24 0.15 4.77 GF 2-6 0.15 4.78

[0297] It should be noted that the unit of reorganization energy (ROE) and first ionization potential (IP) in Table 1 is electron volt, symbolized by eV. The structural formulas represented by GF1-x, GF2-x, and GF3-x (x is a positive integer) refer to the above content and will not be repeated here.

[0298] It can be seen from Table 1 that the reorganization energies of the four first functional materials GF1 range from 0.13 eV to 0.18 eV, and the reorganization energies of the four second functional materials GF2 range from 0.13 eV to 0.16 eV, indicating that the hole transport properties of the first functional material GF1 and the second functional material GF2 are both good.

[0299] As can be seen from Table 1, the first ionization potentials of the four first functional materials GF1 range from 4.80eV to 4.89eV, and the first ionization potentials of the four second functional materials GF2 range from 4.77eV to 4.79eV. The first ionization potential of the first functional material GF1 is greater than the first ionization potential of the second functional material GF2, and the difference between the two is less than 0.2eV, indicating that the energy levels of the first functional material GF1 and the second functional material GF2 match. In this way, when holes are transferred from the electron blocking layer 1333 to the auxiliary functional layer 1334, the required external electric field is relatively small, that is, the voltage driving the light-emitting device 10 to emit light is relatively low. In this way, the driving voltage of the light-emitting device 10 can be reduced, thereby reducing the power consumption of the light-emitting device 10.

[0300] The following embodiments and comparative examples use different materials to make the hole injection layer 1331, hole transport layer 1332, electron blocking layer 1333, auxiliary function layer 1334, and hole generating layer 142 of the light-emitting device 10, and compare the voltage, luminous efficiency, and device life of the light-emitting device 10.

[0301] In the following comparative examples and embodiments, the testing conditions of the light emitting device 10 are the same.

[0302] like Figure 8As shown, the light-emitting device 10 in the following comparative examples and embodiments includes an anode 11 and a cathode 12 arranged opposite to each other, and two light-emitting units 13 arranged between the cathode 12 and the anode 11, and a charge generation layer 14 is arranged between the two light-emitting units 13, and the charge generation layer 14 includes an electron generation layer 141 located on the side close to the anode 11 and a hole generation layer 142 located on the side close to the cathode 12. Each of the two light-emitting units 13 includes a first type of functional layer 133, a light-emitting layer 131, and a second type of functional layer 132. The difference is that in the first light-emitting unit 13a close to the anode 11, the first type of functional layer 133a includes a first hole injection layer 1331a, a first hole transport layer 1332a, a first electron blocking layer 1333a, and a first auxiliary functional layer 1334a which are sequentially stacked in a direction away from the anode 11; and the second type of functional layer 132a includes a first hole blocking layer 1323a. In the second light-emitting unit 13b close to the cathode 12, the first type of functional layer 133b includes a second hole transport layer 1332b, a second electron blocking layer 1333b, and a second auxiliary functional layer 1334b which are stacked in sequence along the direction away from the anode 11; the second type of functional layer 132b includes a second hole blocking layer 1323b, a second electron transport layer 1322b, and a second electron injection layer 1321b which are stacked in sequence along the direction away from the anode 11.

[0303] In the following comparative examples and embodiments, the thicknesses of the first hole injection layer 1331a, the first hole transport layer 1332a, the first electron blocking layer 1333a, the first auxiliary functional layer 1334a, the light-emitting layer 131a, the first hole blocking layer 1323a, the electron generating layer 141, the hole generating layer 142, the second hole transport layer 1332b, the second electron blocking layer 1333b, the second auxiliary functional layer 1334b, the light-emitting layer 131b, the second hole blocking layer 1323b, the second electron transport layer 1322b and the second electron injection layer 1321b, which are stacked in the direction from the anode 11 to the cathode 12, are 100A, 190A, 60A, 40A, 400A, 50A, 180A, 90A, 410A, 60A, 40A, 400A, 50A, 350A and 10A respectively.

[0304] The materials involved in the above-mentioned film layer of the light emitting device 10 include:

[0305]

[0306]

[0307] It should be noted that (GH-1), (GH-2), (GD-1), (NPB), (PD), (EBM-1), (HBL-1), and (ETL-1) in the above structural formulas are aliases for each structural formula and are not part of the structural formula.

[0308] The following is a description of the parts of the film layer materials that are the same in the comparative examples and the embodiments. In the following comparative examples and embodiments, the material of the anode 11 is indium tin oxide (Indium Tin Oxide, ITO). The materials of the light-emitting layers 131 of the two light-emitting units 13 are the same, both including a first host material, a second host material and a first guest material, and the mass ratio of the first host material, the second host material and the first guest material is 45:45:10, wherein the structural formula of the first host material is shown in (GH-1), the structural formula of the second host material is shown in (GH-2), and the structural formula of the first guest material is shown in (GD-1). The structural formulas of the materials of the first hole blocking layer 1323a and the second hole blocking layer 1323b are shown in (HBL-1). The materials of the electron generation layer 141 and the second electron transport layer 1322b both include electron transport materials and ytterbium, and the mass ratio of the electron transport material to ytterbium is 99:1, wherein the structural formula of the electron transport material is shown in (ETL-1). The material of the second electron injection layer 1321b is ytterbium. The material of the cathode 12 is magnesium-silver alloy.

[0309] The following is an explanation of the parts in which the film layer materials are differently set in the comparative examples and the embodiments. The film layers in which the film layer materials are differently set include: a first hole injection layer 1331a, a first hole transport layer 1332a, a first electron blocking layer 1333a, a first auxiliary functional layer 1334a, a hole generation layer 142, a second hole transport layer 1332b, a second electron blocking layer 1333b, and a second auxiliary functional layer 1334b. Among them, in the same embodiment or the same comparative example, the material of the hole generation layer 142 is the same as the material of the first hole injection layer 1331a; the material of the first hole transport layer 1332a is the same as the material of the second hole transport layer 1332b; the material of the first electron blocking layer 1333a is the same as the material of the second electron blocking layer 1333b; the material of the first auxiliary functional layer 1334a is the same as the material of the second auxiliary functional layer 1334b.

[0310] In Examples 1 to 16 and Comparative Examples 1 to 2, the materials of the hole generation layer 142 and the first hole injection layer 1331a include hole transport materials and P-type dopants, and the mass ratio of the hole transport material to the P-type dopant is 98:2. Among them, the structural formula of the P-type dopant is shown in (PD). In Examples 1 to 16, the structural formulas of the hole transport materials are shown in (GF3-9), (GF3-1), (GF3-2), (GF3-3), (GF3-4), (GF3-5), (GF3-6), (GF3-7), (GF3-10), (GF3-8), (GF3-11), (GF3-12), (GF3-25), (GF3-27), (GF3-28), and (GF3-29). In Comparative Example 1, the structural formula of the hole transport material is shown in (GF3-9). In Comparative Example 2, the structural formula of the hole transport material is shown in (NPB).

[0311] In Examples 1 to 16 and Comparative Example 1, the material of the first hole transport layer 1332a and the material of the second hole transport layer 1332b are the third functional material GF3. Specifically, in Examples 1 to 16, the structural formulas of the third functional material GF3 are shown as (GF3-9), (GF3-1), (GF3-2), (GF3-3), (GF3-4), (GF3-5), (GF3-6), (GF3-7), (GF3-10), (GF3-8), (GF3-11), (GF3-12), (GF3-25), (GF3-27), (GF3-28), and (GF3-29). In Comparative Example 1, the structural formula of the third functional material GF3 is shown as (GF3-9). In Comparative Example 2, the structural formula of the material of the first hole transport layer 1332a and the material of the second hole transport layer 1332b is shown as (NPB).

[0312] In Examples 1 to 16 and Comparative Example 1, the material of the first electron blocking layer 1333a and the material of the second electron blocking layer 1333b are both the second functional material GF2. Specifically, in Examples 1 to 16, the structural formulas of the second functional material GF2 are shown as (GF2-9), (GF2-10), (GF2-11), (GF2-12), (GF2-13), (GF2-14), (GF2-15), (GF2-16), (GF2-17), (GF2-19), (GF2-18), (GF2-20), (GF2-21), (GF2-22), (GF2-23), and (GF2-24). In Comparative Example 1, the structural formula of the second functional material GF2 is shown as (GF2-1). In Comparative Example 2, the structural formula of the material of the first electron blocking layer 1333a and the material of the second electron blocking layer 1333b is shown as (EBM-1).

[0313] In Examples 1 to 16, the material of the first auxiliary functional layer 1334a and the material of the second auxiliary functional layer 1334b are both the first functional material GF1. Specifically, in Examples 1 to 16, the structural formulas of the first functional material GF1 are respectively as shown in (GF1-3), (GF1-3), (GF1-4), (GF1-4), (GF1-7), (GF1-7), (GF1-8), (GF1-8), (GF1-9), (GF1-9), (GF1-10), (GF1-10), (GF1-27), (GF1-27), (GF1-29), (GF1-29). In Comparative Example 1, the structural formula of the material of the first auxiliary functional layer 1334a and the material of the second auxiliary functional layer 1334b is as shown in (GF2-1), and in Comparative Example 2, the structural formula of the material of the first auxiliary functional layer 1334a and the material of the second auxiliary functional layer 1334b is as shown in (EBM-1). Moreover, in Comparative Examples 1 and 2, the first electron blocking layer 1333a and the first auxiliary functional layer 1334a are combined into one film layer, and the second electron blocking layer 1333b and the second auxiliary functional layer 1334b are combined into one film layer.

[0314] In order to more clearly describe the difference between the film material structures used in the light-emitting device 10 in the embodiment and the comparative example, the following Table 2 and Table 3 are used to more clearly show the film material structures used in the light-emitting device 10 in the embodiment and the comparative example.

[0315] Table 2

[0316]

[0317] Table 3

[0318]

[0319] It should be noted that, in Table 2, HIL1 represents the first hole injection layer 1331a, HTL1 represents the first hole transport layer 1332a, EBL1 represents the first electron blocking layer 1333a, FGL1 represents the first auxiliary functional layer 1334a, EML1 represents the light-emitting layer 131 of the first light-emitting unit 13, HBL1 represents the first hole blocking layer 1323a, and N-CGL represents the electron generating layer 141. In Table 3, P-CGL represents the hole generating layer 142, HTL2 represents the second hole transport layer 1332b, EBL2 represents the second electron blocking layer 1333b, FGL2 represents the second auxiliary functional layer 1334b, EML2 represents the light-emitting layer 131 of the second light-emitting unit 13, HBL2 represents the second hole blocking layer 1323b, ETL2 represents the second electron transport layer 1322b, and EIL2 represents the second electron injection layer 1321b. "A / B" in Table 2 and Table 3 means that the material of the film layer includes material A and material B. For example, the material of P-CGL in Example 1 is GF3-1 / PD, which means that the material of the hole generating layer 142 includes the third functional material GF3 with the structural formula (GF3-1) and the material with the structural formula (PD). "Ax" in Table 2 and Table 3 means that the corresponding structural formula is Ax. For example, the content of the sub-grid corresponding to HTL2 in Example 1 is "GF3-1", which means that the material of the second hole transport layer 1332b in Example 1 is the third functional material GF3 with the structural formula (GF3-1). Among them, the structural formulas represented by GF1-x, GF2-x, GF3-x (x is a positive integer), GH-1, GH-2, GD-1, NPB, PD, EBM-1, HBL-1, and ETL-1 refer to the above content and will not be repeated here.

[0320] Based on the above materials, the voltage (V), luminous efficiency (Eff.), and device life (LT) of the light emitting devices 10 of Examples 1 to 16 and Comparative Examples 1 to 4 were tested. The data results of voltage (V), luminous efficiency (Eff.), and device life (LT) are based on Comparative Example 2, and the test results are shown in Table 4 below.

[0321] Table 4

[0322] V(％) Eff.(%) LT(%) Example 1 95.4 116.4 153.4 Example 2 96.5 115.4 160.9 Example 3 96.4 118.5 162.0 Example 4 96.7 119.5 159.8 Example 5 97.4 116.4 157.7 Example 6 96.5 117.4 158.8 Example 7 98.6 118.5 168.5 Example 8 95.8 119.5 164.2 Example 9 97.6 117.4 153.4 Example 10 97.8 116.4 152.3 Embodiment 11 96.8 121.5 158.8 Example 12 97.3 122.6 160.9 Embodiment 13 96.5 124.6 178.2 Embodiment 14 96.7 122.6 178.2 Embodiment 15 97.3 123.6 177.1 Example 16 95.8 128.8 181.4 Comparative Example 1 99 103 118 Comparative Example 2 100 100 100

[0323] It can be seen from Table 4 that, taking the test data of Comparative Example 2 as a reference, the voltage range of Examples 1 to 16 is 95.4% to 98.6%, which is lower than the voltage of Comparative Example 1 and Comparative Example 2. It can be seen that the voltage of Examples 1 to 16 is relatively low, which can reduce the power consumption of the light-emitting device 10. The luminous efficiency of Examples 1 to 16 ranges from 115.4% to 128.8%, which is higher than the luminous efficiency of Comparative Example 1 and Comparative Example 2. It can be seen that the luminous efficiency of Examples 1 to 16 is significantly improved. The device life of Examples 1 to 16 ranges from 152.3% to 181.4%, which is higher than the device life of Comparative Example 1 and Comparative Example 2. It can be seen that the device life of Examples 1 to 16 is significantly improved.

[0324] Among them, compared with Comparative Example 2, Comparative Example 1 has a lower voltage, and the luminous efficiency and device life are improved. This is because in Comparative Example 1, the third functional material GF3 is used as the material of the first hole transport layer 1332 and the second hole transport layer 1332, and the second functional material GF2 is used as the material of the first electron blocking layer 1333 and the second electron blocking layer 1333. On the one hand, the second functional material GF2 and the third functional material GF3 have matching energy levels and mobility, which can reduce the voltage and improve the luminous efficiency and device life. On the other hand, the second functional material GF2 has relatively high stability and relatively low refractive index, which can improve the luminous efficiency and device life.

[0325] Therefore, it can be seen from the above tests that in the light-emitting device 10 provided by the present disclosure, by providing an auxiliary functional layer 1334 containing the first functional material GF1, an electron blocking layer 1333 containing the second functional material GF2, and a hole transport layer 1332 containing the third functional material GF3, and the first functional material GF1, the second functional material GF2, and the third functional material GF3 have a matching energy level mobility, the effective injection and rapid transmission of holes are achieved, so that the stability of the first type of functional layer 133 is effectively improved, the device life and luminous efficiency are effectively improved, and at the same time, the driving voltage of the light-emitting device 10 can be reduced, and the power consumption of the light-emitting device 10 can be reduced. On this basis, by using the deuterated first functional material GF1, the second functional material GF2, and the third functional material GF3, the device life and luminous efficiency of the light-emitting device 10 can be further improved.

[0326] The following tests are conducted on the lateral current of the test device 30 composed of the electrode Q / the first functional layer 133. The test conditions of the following three test devices 30 are the same.

[0327] The structure of the test device 30 is as follows: Fig. 9As shown. Exemplarily, the preparation method of the test device 30 composed of the electrode Q / first type functional layer 133 is as follows: a patterned electrode layer is formed on the backplane using the material of the electrode Q (for example, indium tin oxide ITO), and a hole injection layer 1331, a hole transport layer 1332, an electron blocking layer 1333, and an auxiliary functional layer 1334 are formed in sequence at the opening of the electrode layer using the material of the hole injection layer 1331, the material of the hole transport layer 1332, the material of the electron blocking layer 1333, and the material of the auxiliary functional layer 1334. Among them, the process of forming the electrode layer is, for example, an etching process; the process of forming the hole injection layer 1331, the hole transport layer 1332, the electron blocking layer 1333, and the auxiliary functional layer 1334 is, for example, an evaporation process. After the preparation is completed, the parts of the electrode layer located on both sides of the first functional layer 133 respectively form two electrodes Q, and the two electrodes Q are electrically connected through the first functional layer 133 located between them.

[0328] It should be noted that the materials of the electrodes Q of the three test devices 30 are the same, that is, indium tin oxide. The following describes the parts of the film layer materials of the three test devices 30 that are differently set.

[0329] The material of the hole injection layer 1331 of the test device 301, the test device 302, and the test device 303 includes a hole transport material and a P-type dopant, and the mass ratio of the hole transport material to the P-type dopant is 98:2. In the test device 301, the test device 302, and the test device 303, the structural formulas of the hole transport material are shown as (GF3-9), (GF3-10), and (NPB), respectively.

[0330] The material of the hole transport layer 1332 of the test device 301 and the test device 302 is the third functional material GF3. Specifically, in the test device 301 and the test device 302, the structural formula of the third functional material GF3 is shown as (GF3-9) and (GF3-10), respectively. In the test device 303, the structural formula of the material of the hole transport layer 1332 is shown as (NPB).

[0331] The material of the electron blocking layer 1333 of the test device 301 and the test device 302 is the second functional material GF2. Specifically, in the test device 301 and the test device 302, the structural formula of the second functional material GF2 is shown as (GF2-9) and (GF2-17), respectively. In the test device 303, the structural formula of the material of the electron blocking layer 1333 is shown as (EBM-1).

[0332] The material of the auxiliary functional layer 1334 of the test device 301 and the test device 302 is the first functional material GF1. Specifically, in the test device 301 and the test device 302, the structural formula of the first functional material GF1 is shown as (GF1-3) and (GF1-9), respectively. In the test device 303, the structural formula of the material of the auxiliary functional layer 1334 is shown as (EBM-1). Moreover, in the test device 303, the electron blocking layer 1333 and the auxiliary functional layer 1334 are combined into one film layer.

[0333] In order to more clearly describe the differences in the film material structures used by the three test devices 30, the following Table 5 is used to more clearly show the film material structures used by the three test devices 30. In addition, the following Table 5 also shows the test results of the lateral current of the three test devices 30. Among them, the data results of the lateral current are based on the test device 303 as a reference.

[0334] Table 5

[0335]

[0336] It can be seen from Table 5 that, taking the test data of the test device 303 as a reference, when the circuit connected to the two electrodes Q is turned on, the lateral currents of the test devices 301 and 302 are 35% and 30% respectively, which are less than the lateral current of the test device 303. It can be seen that by providing the auxiliary functional layer 1334 containing the first functional material GF1, the electron blocking layer 1333 containing the second functional material GF2, and the hole transport layer 1332 containing the third functional material GF3, the lateral current can be reduced, and the lateral leakage between the blue light-emitting device 103 and the green light-emitting device 102 can be avoided to cause color crosstalk, and the display effect of the OLED display panel 100 is improved.

[0337] Therefore, it can be seen from the above tests that in the light-emitting device 10 provided by the present disclosure, by providing the auxiliary functional layer 1334 containing the first functional material GF1, the electron blocking layer 1333 containing the second functional material GF2, and the hole transport layer 1332 containing the third functional material GF3, the device life and luminous efficiency can be effectively improved, and the driving voltage of the light-emitting device 10 can be effectively reduced. In addition, the lateral current can be reduced, color crosstalk can be avoided, and the display effect is improved.

[0338] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light emitting device, characterized in that: include: A cathode and an anode arranged opposite to each other, and at least two light-emitting units arranged between the cathode and the anode, wherein the at least two light-emitting units are arranged in a stacked manner; At least one of the at least two light-emitting units comprises: a light-emitting layer and a first type of functional layer disposed on one side of the light-emitting layer; the first type of functional layer comprises an auxiliary functional layer, the material of the auxiliary functional layer comprises a first functional material, and the first functional material is selected from any one of the structures represented by the following general formula (I); Wherein, L1 is selected from any one of a single bond, a substituted or unsubstituted C6-C39 arylene group, and a substituted or unsubstituted C6-C39 heteroarylene group; L2 is selected from any one of a substituted or unsubstituted C6-C39 arylene group and a substituted or unsubstituted C6-C39 heteroarylene group; Ar1, Ar2 and Ar3 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboron group, a substituted or unsubstituted C6-C39 arylphosphine group and a substituted or unsubstituted C6-C39 arylsilyl group.

2. The light emitting device according to claim 1, characterized in that: The first type of functional layer is located on a side of the light emitting layer close to the anode; and the auxiliary functional layer is configured to block electrons.

3. The light emitting device according to claim 1 or 2, characterized in that: The first type of functional layer further comprises an electron blocking layer stacked with the auxiliary functional layer, the material of the electron blocking layer comprises a second functional material, and the second functional material is selected from any one of the structures represented by the following general formula (II); Wherein, L3 is selected from any one of a single bond, a substituted or unsubstituted C3-C30 arylene group, and a substituted or unsubstituted C3-C30 heteroarylene group; Ar5 and Ar6 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C39 arylamine group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 arylphosphino group and a substituted or unsubstituted C6-C39 arylsilyl group; Ar7 and R1 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted Any one of a C6-C39 arylamine group, a substituted or unsubstituted C3-C39 cycloalkyl group, a substituted or unsubstituted C3-C39 heterocycloalkyl group, a substituted or unsubstituted C1-C39 alkylsilyl group, a substituted or unsubstituted C1-C39 alkylboryl group, a substituted or unsubstituted C6-C39 arylboryl group, a substituted or unsubstituted C6-C39 arylphosphino group, and a substituted or unsubstituted C6-C39 arylsilyl group; m is a positive integer greater than or equal to 1.

4. The light emitting device according to claim 3, characterized in that: The electron blocking layer is located on a side of the auxiliary functional layer away from the light-emitting layer, and is configured to block electrons.

5. The light emitting device according to claim 4, characterized in that: The first type of functional layer further comprises a hole transport layer stacked with the electron blocking layer, the material of the hole transport layer comprises a third functional material, and the third functional material is selected from any one of the structures represented by the following general formula (II); Wherein, L4 is selected from any one of a substituted or unsubstituted C3-C30 arylene group and a substituted or unsubstituted C3-C30 heteroarylene group; Ar8, Ar9, Ar 10 and Ar 11 The same or different, each independently selected from any one of a substituted or unsubstituted C6-C39 aryl group, a substituted or unsubstituted C5-C60 heteroaryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C1-C39 alkoxy group, a substituted or unsubstituted C6-C39 arylamine group and a substituted or unsubstituted C6-C39 arylsilyl group.

6. The light emitting device according to claim 5, characterized in that: The hole transport layer is located on a side of the electron blocking layer away from the light emitting layer, and is configured to transport holes.

7. The light emitting device according to claim 3, characterized in that: The first functional material is selected from any one of the structures shown in the following general formula (IV); Wherein, X is selected from any one of O, S, N(R2) and C(R3R4); R2, R3, R4 and Ar4 are the same or different and are independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C39 alkyl, substituted or unsubstituted C2-C39 alkenyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C2-C39 alkyl, substituted or unsubstituted C2-C39 alkynyl, substituted or unsubstituted C6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C1-C39 alkoxy, substituted or unsubstituted C2-C39 alkyl, substituted or unsubstituted C2-C39 alkoxy ...6-C39 aryl, substituted or unsubstituted C5-C60 heteroaryl, substituted or Any one of a substituted C6~C39 aromatic amino group, a substituted or unsubstituted C3~C39 cycloalkyl group, a substituted or unsubstituted C3~C39 heterocycloalkyl group, a substituted or unsubstituted C1~C39 alkylsilyl group, a substituted or unsubstituted C1~C39 alkylboryl group, a substituted or unsubstituted C6~C39 arylboryl group, a substituted or unsubstituted C6~C39 aromatic phosphine group and a substituted or unsubstituted C6~C39 aromatic silyl group.

8. The light emitting device according to claim 7, characterized in that: In the case where the first functional material is selected from any one of the structures represented by general formula (I), the structure represented by general formula (I) contains at least one deuterium; or, When the first functional material is selected from any one of the structures represented by general formula (IV), the structure represented by general formula (IV) contains at least one deuterium.

9. The light emitting device according to claim 3, characterized in that: At least one of Ar5, Ar6, Ar7, L3 and R1 contains deuterium.

10. The light emitting device according to claim 5, characterized in that: Ar8, Ar9, Ar 10 ,Ar 11 At least one of L1 and L4 contains deuterium.

11. The light emitting device according to claim 5, characterized in that: Ar8, Ar9, Ar 10 and Ar 11 At least one of them is different from the other three.

12. The light emitting device according to claim 5, characterized in that: The first ionization potential of the first functional material is greater than or equal to the first ionization potential of the second functional material; the first ionization potential of the second functional material is greater than or equal to the first ionization potential of the third functional material.

13. The light emitting device according to claim 12, characterized in that: A difference between a first ionization potential of the first functional material and a first ionization potential of the second functional material is less than or equal to 0.2 eV.

14. The light emitting device according to claim 12, characterized in that: A difference between a first ionization potential of the second functional material and a first ionization potential of the third functional material is less than or equal to 0.2 eV.

15. The light emitting device according to claim 12, characterized in that: A difference between a first ionization potential of the first functional material and a first ionization potential of the third functional material is less than or equal to 0.3 eV.

16. The light emitting device according to claim 3, characterized in that: The thickness of the electron blocking layer is greater than or equal to the thickness of the auxiliary functional layer.

17. The light emitting device according to claim 1, characterized in that: The thickness of the auxiliary functional layer ranges from 5 nm to 50 nm.

18. The light emitting device according to claim 3, characterized in that: The thickness of the electron blocking layer ranges from 10 nm to 55 nm.

19. The light emitting device according to claim 5, characterized in that: The thickness of the hole transport layer ranges from 50 nm to 200 nm.

20. The light emitting device according to claim 5, characterized in that: It also includes a charge generation layer located between two adjacent light-emitting units of the at least two light-emitting units; the charge generation layer includes an electron generation layer and a hole generation layer that are stacked; The material of the hole generating layer includes the third functional material.

21. The light emitting device according to claim 5, characterized in that: The first type of functional layer further comprises a hole injection layer, and the hole injection layer is located on a side of the hole transport layer away from the electron blocking layer; The material of the hole injection layer includes the third functional material.

22. The light emitting device according to claim 1, characterized in that: Each of the at least two light-emitting units further includes a second type of functional layer, wherein the second type of functional layer is located on a side of the light-emitting layer away from the first type of functional layer and is configured to transport electrons.

23. The light emitting device according to claim 1, characterized in that: The light-emitting layer of each of the at least two light-emitting units is configured to emit green light.

24. A display panel, characterized in that: It comprises a plurality of light-emitting devices as claimed in any one of claims 1 to 23; and further comprises a driving circuit, wherein the driving circuit is used to drive the light-emitting devices to emit light.

25. A display device, characterized in that: comprising the display panel as claimed in claim 24; It also includes: a driving chip, and the driving chip is used to drive the display panel to display.

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