Display device

Abstract

A display device includes: a display layer including a display area and a non-display area; a touch sensor layer overlapping the display area; and a light conversion layer on the touch sensor layer and overlapping the display area; the display device includes: a first light emitting element that emits light of a first wavelength; a second light emitting element emitting light of a second wavelength; a capping layer; a 1-1 encapsulation layer and a 1-2 encapsulation layer on the capping layer and including an inorganic insulating layer; and a second encapsulation layer and a third encapsulation layer sequentially on the 1-1 encapsulation layer and the 1-2 encapsulation layer, in which a thickness and a refractive index of a plurality of inorganic insulating layers of the 1-2 encapsulation layer are different from a thickness and a refractive index of an inorganic insulating layer of the 1-1 encapsulation layer, and in which a dielectric constant of the second encapsulation layer is in a range of 2.0 to 3.0.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0074083 filed in the Korean Intellectual Property Office on June 9, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Aspects of some embodiments of the present disclosure relate to a display device. Background Art

[0004] With the development of the information society, consumers' demand for display devices for displaying images is increasing in various forms. For example, display devices can be applied to various electronic devices such as smart phones, digital cameras, notebook computers, navigation systems, and smart TVs. The display device can be a flat panel display device such as a liquid crystal display device, a field emission display device, and an organic light-emitting display device. Among such flat panel display devices, the light-emitting display device generally includes a light-emitting element capable of self-luminescence in each of the pixels of the display panel, so that an image can be displayed without a backlight unit that provides light to the display panel.

[0005] The above information disclosed in this Background section is only for enhancement of understanding of the background technology, and therefore the information discussed in this Background section does not necessarily constitute prior art. Summary of the invention

[0006] Aspects and features of some embodiments of the present disclosure include a display device having relatively improved light efficiency and viewing angle characteristics including a stack structure in which a plurality of inorganic insulating layers are arranged.

[0007] However, aspects of the embodiments of the present disclosure are not limited to the aspects specifically described herein. By referring to the detailed description of the embodiments of the present disclosure given below, the above and other aspects of the embodiments of the present disclosure will become more obvious to those skilled in the art to which the present disclosure belongs.

[0008] According to some embodiments, a display device includes: a display layer including a display area and a non-display area surrounding the display area; a touch sensor layer overlapping a portion of the display area of ​​the display device; and a light conversion layer on the touch sensor layer and overlapping a portion of the display area of ​​the display device, wherein the display device includes: a first light-emitting element in the first light-emitting area and emitting light of a first wavelength; a second light-emitting element in the second light-emitting area and emitting light of a second wavelength; a capping layer on the first light-emitting element and the second light-emitting element; a 1-1 encapsulation layer on the capping layer in the first light-emitting area and including a plurality of inorganic insulating layers; a 1-2 encapsulation layer on the capping layer in the second light-emitting area and including a plurality of inorganic insulating layers; and a second encapsulation layer and a third encapsulation layer, sequentially on the 1-1 encapsulation layer and the 1-2 encapsulation layer, wherein the thickness and refractive index of the plurality of inorganic insulating layers of the 1-2 encapsulation layer are different from the thickness and refractive index of the plurality of inorganic insulating layers of the 1-1 encapsulation layer, and wherein the dielectric constant of the second encapsulation layer is in the range of 2.0 to 3.0.

[0009] According to some embodiments, the second encapsulation layer has a thickness of 8 μm to 9 μm or 10 μm to 11 μm.

[0010] According to some embodiments, the 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer, and an upper layer, wherein the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer, and an upper layer.

[0011] According to some embodiments, the optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer include silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and wherein the upper layer includes silicon oxynitride having a high oxygen content (e.g., an oxygen content exceeding a threshold).

[0012] According to some embodiments, the optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index in the range of 1.50 to 1.80, and the refractive index of the auxiliary layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, and wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and the upper layer has a refractive index smaller than the refractive index of the auxiliary layer and the refractive index of the second moisture barrier layer.

[0013] According to some embodiments, the optical layer, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, wherein the first moisture barrier layer and the second moisture barrier layer have a thickness in the range of to The thickness of the auxiliary layer and the upper layer is within the range of to The thickness is within the range of, and the upper layer is thicker than the auxiliary layer.

[0014] According to some embodiments, the optical layer has The first moisture barrier layer has a thickness of The auxiliary layer has a thickness of The thickness of the upper layer is Thickness,

[0015] According to some embodiments, the first optical layer has The second optical layer has a thickness of The second moisture barrier layer has a thickness of Thickness.

[0016] According to some embodiments, the 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer, and an upper layer, wherein the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, and a second moisture barrier layer.

[0017] According to some embodiments, the optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer include silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and wherein the upper layer includes silicon oxynitride having a high oxygen content (e.g., an oxygen content exceeding a threshold).

[0018] According to some embodiments, the optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index in the range of 1.50 to 1.80, and the refractive index of the auxiliary layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, and wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and the upper layer has a refractive index smaller than the refractive index of the auxiliary layer and the refractive index of the second moisture barrier layer.

[0019] According to some embodiments, the optical layer, the first optical layer and the second optical layer have to The thickness of the first moisture barrier layer and the second moisture barrier layer has a thickness of to The thickness of the auxiliary layer and the upper layer is within the range of to The thickness is within the range of, and the upper layer is thicker than the auxiliary layer.

[0020] According to some embodiments, the optical layer has The first moisture barrier layer has a thickness of The auxiliary layer has a thickness of The thickness of the upper layer is The thickness of the first optical layer is The second optical layer has a thickness of The second moisture barrier layer has a thickness of Thickness.

[0021] According to some embodiments, the 1-1 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer, wherein the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer and a second moisture barrier layer, and wherein the second encapsulation layer is directly on the second moisture barrier layer of the 1-2 encapsulation layer.

[0022] According to some embodiments, the first optical layer comprises silicon oxynitride, wherein the second optical layer comprises silicon nitride, wherein the second moisture barrier layer comprises silicon oxynitride, and wherein the upper layer comprises silicon oxynitride having a high oxygen content (eg, an oxygen content exceeding a threshold).

[0023] According to some embodiments, the first optical layer has a refractive index in the range of 1.20 to 1.62, wherein the second optical layer has a refractive index in the range of 1.70 to 1.90, wherein the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70 greater than the refractive index of the first optical layer, and wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and the upper layer has a refractive index less than the refractive index of the second moisture barrier layer.

[0024] According to some embodiments, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, wherein the second moisture barrier layer has a thickness in the range of to The thickness of the upper layer is within the range of to The thickness is within the range of .

[0025] According to some embodiments, the first optical layer has The second optical layer has a thickness of The second moisture barrier layer has a thickness of The thickness of the upper layer is Thickness.

[0026] According to some embodiments, the 1-1 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer, a buffer layer and an upper layer, wherein the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer.

[0027] According to some embodiments, the first optical layer comprises silicon oxynitride, wherein the second optical layer comprises silicon nitride, wherein the second moisture barrier layer and the buffer layer comprise silicon oxynitride, and wherein the upper layer comprises silicon oxynitride having a high oxygen content (e.g., an oxygen content exceeding a threshold).

[0028] According to some embodiments, the first optical layer has a refractive index in the range of 1.20 to 1.62, wherein the second optical layer has a refractive index in the range of 1.70 to 1.90, wherein the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70 greater than the refractive index of the first optical layer, wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and wherein the buffer layer has a refractive index less than the refractive index of the second moisture barrier layer and greater than the refractive index of the upper layer.

[0029] According to some embodiments, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, wherein the second moisture barrier layer has a thickness in the range of to The thickness of the buffer layer and the upper layer is within the range of to The thickness is within the range of .

[0030] According to some embodiments, the first optical layer has The second optical layer has a thickness of The second moisture barrier layer has a thickness of The buffer layer has a thickness of The thickness of the upper layer is Thickness

[0031] According to some embodiments, the capping layer has a refractive index greater than that of the first optical layer.

[0032] According to some embodiments of the present disclosure, a display device includes: a first light-emitting element, which is in a first light-emitting area and emits light of a first wavelength; a second light-emitting element, which is in a second light-emitting area and emits light of a second wavelength; a capping layer, which is on the first light-emitting element and the second light-emitting element; a 1-1 encapsulation layer, which is on the capping layer in the first light-emitting area and includes a plurality of inorganic insulating layers; a 1-2 encapsulation layer, which is on the capping layer in the second light-emitting area and includes a plurality of inorganic insulating layers; and a second encapsulation layer and a third encapsulation layer, which are sequentially on the 1-1 encapsulation layer and the 1-2 encapsulation layer, wherein the thickness and the refractive index of the plurality of inorganic insulating layers of the 1-2 encapsulation layer are different from the thickness and the refractive index of the plurality of inorganic insulating layers of the 1-1 encapsulation layer.

[0033] According to some embodiments, a dielectric constant of the second encapsulation layer is in a range of 2.0 to 3.0, wherein a thickness of the second encapsulation layer is 8 μm to 9 μm or 10 μm to 11 μm.

[0034] According to some embodiments, the 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer, and an upper layer, wherein the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer, and an upper layer.

[0035] According to some embodiments, the optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer include silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and wherein the upper layer includes silicon oxynitride having a high oxygen content (e.g., an oxygen content exceeding a threshold).

[0036] According to some embodiments, the optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index greater than the refractive index of the optical layer and the refractive index of the first optical layer in the range of 1.50 to 1.80, the second moisture barrier layer has a refractive index greater than the refractive index of the optical layer and the refractive index of the first optical layer in the range of 1.50 to 1.70, and wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and the upper layer has a refractive index smaller than the refractive index of the auxiliary layer and the refractive index of the second moisture barrier layer.

[0037] According to some embodiments, the optical layer, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, wherein the first moisture barrier layer and the second moisture barrier layer have a thickness in the range of to The thickness of the auxiliary layer and the upper layer is within the range of to The thickness is within the range of, and the upper layer is thicker than the auxiliary layer.

[0038] According to some embodiments, the optical layer has The first moisture barrier layer has a thickness of The auxiliary layer has a thickness of The thickness of the upper layer is The thickness of the first optical layer is The second optical layer has a thickness of The second moisture barrier layer has a thickness of Thickness.

[0039] According to some embodiments, the display device further includes a light conversion layer on the third encapsulation layer, wherein the light conversion layer is one of a color filter and a polarizing film.

[0040] According to some embodiments, a display device may include a stacked structure of layers having different refractive indices, so that light efficiency of a light emitting element, light emitting efficiency of light emitted from the light emitting element, and viewing angle characteristics may be controlled as desired.

[0041] However, features according to the embodiments of the present disclosure are not limited to the above-mentioned features, and various other features are included in the embodiments according to the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 is a schematic perspective view of an electronic device according to some embodiments.

[0043] Figure 2 is a perspective view illustrating a display device included in an electronic device according to some embodiments.

[0044] Figure 3 According to some embodiments, the Figure 2 A cross-sectional view of a display device.

[0045] Figure 4 is a plan view illustrating a display layer of a display device according to some embodiments.

[0046] Figure 5 is a layout diagram illustrating more details of a touch sensing layer according to some embodiments.

[0047] Figure 6 is a diagram illustrating a method according to some embodiments Figure 5 See the layout diagram for more details of the touch node example.

[0048] Figure 7 is a diagram illustrating a method according to some embodiments Figure 6 A cross-sectional view of an example of a display panel taken along line BB'.

[0049] Figure 8 is a cross-sectional view illustrating a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0050] Fig. 9 is a cross-sectional view illustrating in detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0051] Fig.10 is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0052] Fig.11 is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0053] Figures 12 to 15 is a cross-sectional view illustrating a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments. DETAILED DESCRIPTION

[0054] Various aspects of some embodiments of the present disclosure will now be described more fully below with reference to the accompanying drawings. However, the embodiments may be provided in different forms and should not be interpreted as limiting. Throughout the disclosure, the same reference numerals indicate the same components. In the accompanying drawings, the thickness of layers and regions may be exaggerated for clarity.

[0055] For describing the embodiments of the present disclosure, some of the parts that are not associated with the description may not be provided.

[0056] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In contrast, when an element is referred to as being “directly on” another element, there may be no intervening elements present.

[0057] Further, the term "in a plan view" refers to when a portion of an object is viewed from above, and the term "in a schematic cross-sectional view" refers to when a schematic cross-section taken by vertically cutting a portion of an object is viewed from the side. The term "overlap" or "overlapping" means that a first object can be above or below or to the side of a second object, and vice versa. In addition, the term "overlap" may include stacking, stacking, facing and variations thereof, extending over, covering or partially covering, or any other suitable term known and understood by a person of ordinary skill in the art. The expression "non-overlapping" may include such as "separated from" or "beside" or "offset from" and any other suitable equivalent meanings that a person of ordinary skill in the art will understand and understand. The term "facing" and variations thereof may mean that a first object may be directly or indirectly opposite to a second object. In the case where a third object is between the first object and the second object, the first object and the second object may be understood to be indirectly opposite to each other, although still facing each other.

[0058] For ease of description, spatially relative terms such as "below", "below", "down", "above", or "upper" may be used herein to describe the relationship between one element or component and another element or component as illustrated in the accompanying drawings. It will be understood that in addition to the orientations depicted in the accompanying drawings, spatially relative terms are also intended to cover different orientations of the device in use or operation. For example, in the case where the device illustrated in the accompanying drawings is flipped, a device positioned "below" or "below" another device may be set "above" the other device. Therefore, the illustrative term "below" can include both the lower position and the upper position. The device may also be oriented in other orientations, and therefore the spatially relative terms may be interpreted differently depending on the orientation.

[0059] When an element is referred to as being "connected" or "coupled" to another element, the element may be "directly connected" or "directly coupled" to the other element, or "electrically connected" or "electrically coupled" to the other element with one or more intervening elements interposed therebetween. It will be further understood that when the terms "include" and variations thereof, "have" and variations thereof, and / or "comprises" and variations thereof are used, they may specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of other features, integers, steps, operations, elements, components, and / or any combination thereof.

[0060] It will be understood that although the terms "first", "second", or "third", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element or for ease of description and explanation. For example, when discussing a "first element" in the description, it may be referred to as a "second element" or a "third element", and the "second element" and "third element" may be referred to in a similar manner without departing from the teachings herein.

[0061] As used herein, the terms "about" or "approximately" include the stated value and mean within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (e.g., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0062] In the specification and claims, the term "and / or" is intended to include any combination of the terms "and" and "or" in terms of its meaning and interpretation. For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in conjunction or disjunction and may be understood to be equivalent to "and / or". In the specification and claims, the term "at least one of..." is intended to include the meaning of "at least one selected from the group of..." in terms of its meaning and interpretation. For example, "at least one of A and B" may be understood to mean "A, B, or A and B".

[0063] Unless otherwise defined or implied, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an ideal or overly formal sense unless explicitly defined in the specification.

[0064] Hereinafter, aspects of some embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings.

[0065] Figure 1 is a schematic perspective view of an electronic device according to some embodiments.

[0066] refer to Figure 1, the electronic device 1 displays a moving image or a still image. The electronic device 1 may refer to any electronic device having a display screen or a display device configured to display an image. For example, the electronic device 1 may include a television, a laptop computer, a monitor, a billboard, an Internet of Things device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game device, a digital camera, a video camera, etc.

[0067] The electronic device 1 may include a display device providing a display screen (see, for example, Figure 2 10 in). Examples of display devices include inorganic light emitting diode display devices, organic light emitting display devices, quantum dot light emitting display devices, plasma display devices, and field emission display devices. Hereinafter, as an example of a display device, a case where an organic light emitting diode display device is applied is illustrated, but the embodiments of the present disclosure are not limited thereto, and the same technical concept may be applied to other display devices if applicable.

[0068] The shape of the electronic device 1 may be modified in various ways. For example, the electronic device 1 may have a shape such as a horizontally long rectangle, a vertically long rectangle, a square, a rectangle with rounded corners (vertices), other polygons, a circle, an ellipse, or any other suitable shape, depending on the design of the electronic device 1. The shape of the display area DA of the electronic device 1 may also be similar to the overall shape of the electronic device 1. Figure 1 , the electronic device 1 having a long rectangular shape in the second direction DR2 is illustrated.

[0069] The electronic device 1 may include a display area DA and a non-display area NDA. The display area DA is an area where an image may be displayed, and the non-display area NDA is an area where an image is not displayed. The display area DA may be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area. The display area DA may generally occupy the center of the electronic device 1. According to some embodiments, the non-display area NDA may surround the display area DA (e.g., in the periphery of the display area DA or outside the coverage area of ​​the display area DA).

[0070] The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. The second display area DA2 and the third display area DA3 are areas where components for adding various functions to the electronic device 1 are disposed, and the second display area DA2 and the third display area DA3 may correspond to component areas.

[0071] Figure 2is a perspective view illustrating a display device included in an electronic device according to some embodiments.

[0072] refer to Figure 2 , according to some embodiments of the electronic device ( Figure 1 1) in may include a display device 10. The display device 10 may provide a screen for displaying an image through the electronic device 1. The display device 10 may have a planar shape similar to the planar shape of the electronic device 1. For example, the display device 10 may have a shape similar to a rectangle having short sides in the first direction DR1 and long sides in the second direction DR2. The corner where the short sides in the first direction DR1 and the long sides in the second direction DR2 intersect may be formed as an arc to have a curvature, but may be formed at a right angle without being limited thereto. The planar shape of the display device 10 is not limited to a rectangle, and may be similarly formed into other polygons, circles or ellipses in a plan view, or any other suitable shape according to the design of the electronic device 1.

[0073] The display device 10 may include a display panel 100 , a display driving unit 200 , a circuit board 300 , and a touch driving unit 400 .

[0074] The display panel 100 includes a main area MA and a sub-area SBA.

[0075] The main area MA may include a display area DA including pixels displaying an image and a non-display area NDA arranged around the display area DA (e.g., in the periphery of the display area DA or outside the coverage area of ​​the display area DA). The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. The display area DA may emit light from a plurality of emission areas or a plurality of opening areas. For example, the display panel 100 may include a pixel circuit including a switching element, a pixel defining layer defining an emission area or an opening area, and a self-luminous element.

[0076] For example, the self-luminous element may include at least one of an organic light emitting diode (OLED) including an organic light emitting layer, a quantum dot light emitting diode (LED) including a quantum dot light emitting layer, an inorganic light emitting diode (LED) including an inorganic semiconductor, and a micro light emitting diode (micro LED), but the embodiments of the present disclosure are not limited to this.

[0077] The non-display area NDA may be an area outside the display area DA. The non-display area NDA may be defined as an edge area of ​​the main area MA of the display panel 100. The non-display area NDA may include a gate driving unit that supplies a gate signal to a gate line and a fan-out line that connects the display driving unit 200 and the display area DA.

[0078] The sub-area SBA may be an area extending from one side of the main area MA. The sub-area SBA may include a flexible material that can be bent, folded, or curled, etc. For example, when the sub-area SBA is bent, the sub-area SBA may overlap with the main area MA in the thickness direction (third direction DR3). The sub-area SBA may include a pad portion connected to the display drive unit 200 and the circuit board 300. According to some embodiments, the sub-area SBA may be omitted, and the display drive unit 200 and the pad portion may be located in the non-display area NDA.

[0079] The display driving unit 200 may output a signal and a voltage for driving the display panel 100. The display driving unit 200 may supply a data voltage to a data line. The display driving unit 200 may supply a power supply voltage to a power supply line, and may supply a gate control signal to a gate driving unit. The display driving unit 200 may be formed by an integrated circuit (IC) and may be mounted on the display panel 100 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method. For example, the display driving unit 200 may be located in the sub-area SBA, and by bending the sub-area SBA, the display driving unit 200 may overlap with the main area MA in the thickness direction. For another example, the display driving unit 200 may be mounted on a circuit board 300.

[0080] The circuit board 300 may be attached to the pad portion of the display panel 100 using an anisotropic conductive film (ACF). Leads of the circuit board 300 may be electrically connected to the pad portion of the display panel 100. The circuit board 300 may be a flexible printed circuit board, a rigid printed circuit board, or a flexible film such as a chip on film.

[0081] The touch drive unit 400 may be mounted on the circuit board 300. The touch drive unit 400 may be connected to a touch sensing unit (e.g., a touch sensing layer or a touch sensor layer) of the display panel 100. The touch drive unit 400 may supply a touch drive signal to a plurality of touch electrodes of the touch sensing unit, and sense a capacitance change between the plurality of touch electrodes. For example, the touch drive signal may be a pulse signal having a frequency (e.g., a set or predetermined frequency). The touch drive unit 400 may calculate whether an input is made and the input coordinates based on the capacitance change between the plurality of touch electrodes. The touch drive unit 400 may be formed by an integrated circuit (IC).

[0082] Figure 3 Observed from the side Figure 2 A cross-sectional view of a display device.

[0083] refer to Figure 3The display panel 100 may include a display layer DU, a touch sensing layer TSU, and an optical conversion layer OCL. The display layer DU may include a substrate SUB, a thin film transistor layer TFTL, a light emitting element layer EML, and an encapsulation layer TFEL.

[0084] The substrate SUB may be a base substrate or a base member. The substrate SUB may be a flexible substrate that can be bent, folded, or curled. For example, the substrate SUB may include a polymer resin such as polyimide (PI), but is not limited thereto according to embodiments of the present disclosure. According to some embodiments, the substrate SUB may include a glass material or a metal material.

[0085] The thin film transistor layer TFTL may be located on the substrate SUB. The thin film transistor layer TFTL may include a plurality of thin film transistors constituting a pixel circuit of a pixel. The thin film transistor layer TFTL may further include a gate line, a data line, a power line, a gate control line, a fan-out line connecting the display drive unit 200 and the data line, and a lead connecting the display drive unit 200 and the pad portion. Each of the thin film transistors may include a semiconductor region, a source electrode, a drain electrode, and a gate electrode. For example, when the gate drive unit is formed on one side of the non-display area NDA of the display panel 100, the gate drive unit may include a thin film transistor.

[0086] The thin film transistor layer TFTL may be located in the display area DA, the non-display area NDA, and the sub-area SBA. The gate line, the data line, the power line of the thin film transistor layer TFTL, and the thin film transistor of each pixel may be located in the display area DA. The gate control line and the fan-out line of the thin film transistor layer TFTL may be located in the non-display area NDA. The lead line of the thin film transistor layer TFTL may be located in the sub-area SBA.

[0087] The light emitting element layer EML may be located on the thin film transistor layer TFTL. The light emitting element layer EML may include a plurality of light emitting elements including a first electrode, a second electrode and a light emitting layer that emits light, and a pixel defining layer that defines pixels. The plurality of light emitting elements of the light emitting element layer EML may be located in the display area DA.

[0088] According to some embodiments, the light emitting layer may be an organic light emitting layer including an organic material. The light emitting layer may include a hole transport layer, an organic light emitting layer, and an electron transport layer. When the first electrode receives a voltage through the thin film transistor of the thin film transistor layer TFTL and the second electrode receives a cathode voltage, holes and electrons may be respectively transferred to the organic light emitting layer through the hole transport layer and the electron transport layer, and may be combined with each other in the organic light emitting layer to emit light.

[0089] According to some embodiments, the light emitting element may include a quantum dot light emitting diode including a quantum dot light emitting layer, an inorganic light emitting diode including an inorganic semiconductor, or a micro light emitting diode.

[0090] The encapsulation layer TFEL may cover the upper surface and the side surface of the light emitting element layer EML and may protect the light emitting element layer EML. The encapsulation layer TFEL may include at least one inorganic layer and at least one organic layer for encapsulating the light emitting element layer EML.

[0091] The touch sensing layer TSU may be located on the encapsulation layer TFEL. The touch sensing layer TSU may include a plurality of touch electrodes for detecting a user's touch in a capacitive manner and a touch line connecting the plurality of touch electrodes and the touch driving unit 400. For example, the touch sensing layer TSU may sense a user's touch using a mutual capacitance method or a self capacitance method.

[0092] According to some embodiments, the touch sensing layer TSU may be located on an independent substrate disposed on the display layer DU. In this case, the substrate supporting the touch sensing layer TSU may be a base member that seals the display layer DU.

[0093] A plurality of touch electrodes of the touch sensing layer TSU may be located in a touch sensing area overlapping the display area DA. A touch line of the touch sensing layer TSU may be located in a touch peripheral area overlapping the non-display area NDA.

[0094] The optical conversion layer OCL may be located on the touch sensing layer TSU. According to some embodiments, the optical conversion layer OCL may include a plurality of color filters corresponding to the plurality of emission areas, respectively. Each of the color filters may selectively transmit light of a specific wavelength and block or absorb light of other wavelengths. The color filter may absorb some of the light entering from the outside of the display device 10 to reduce reflected light caused by external light. Accordingly, the color filter may prevent or reduce color distortion due to external light reflection. Because the color filter is directly located on the touch sensing layer TSU, the display device 10 may not require a separate substrate for the color filter. Accordingly, the thickness of the display device 10 may be relatively small.

[0095] According to some embodiments, the optical conversion layer OCL may include a polarizing film. The polarizing film may be located on the touch sensing layer TSU to prevent or reduce degradation of visibility due to reflection of external light. The polarizing film may include a phase retardation film such as a linear polarizing plate and a quarter wave plate (λ / 4 plate).

[0096] The cover window may be located on the polarizing film. In this case, the polarizing film and the cover window may be attached by an adhesive material such as an optically clear adhesive film (OCA) or an optically clear resin (OCR).

[0097] In some embodiments, the display device 10 may further include an optical device 500. The optical device 500 may be located in the second display area DA2 or the third display area DA3. The optical device 500 may emit or receive light in the infrared, ultraviolet and / or visible light bands. For example, the optical device 500 may be an optical sensor such as a proximity sensor, an illumination sensor, a camera sensor, or an image sensor that detects light incident on the display device 10.

[0098] Figure 4 is a plan view illustrating a display layer of a display device according to some embodiments.

[0099] refer to Figure 4 , the display layer DU may include a display area DA and a non-display area NDA.

[0100] The display area DA may be located at the center of the display panel 100. A plurality of pixels PX, a plurality of gate lines GL, a plurality of data lines DL, and a plurality of power lines VL may be located in the display area DA. Each of the plurality of pixels PX may be defined as a minimum unit of emitting light.

[0101] The plurality of gate lines GL may supply the plurality of pixels PX with gate signals received from the gate driving unit 210. The plurality of gate lines GL may extend in a first direction DR1 and may be spaced apart from each other in a second direction DR2 crossing the first direction DR1.

[0102] The plurality of data lines DL may supply the plurality of pixels PX with data voltages received from the display driving unit 200. The plurality of data lines DL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0103] The plurality of power lines VL may supply a power voltage received from the display driving unit 200 to the plurality of pixels PX. Here, the power voltage may be at least one of a driving voltage, an initialization voltage, a reference voltage, and a low potential voltage. The plurality of power lines VL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0104] The non-display area NDA may surround the display area DA. The gate driving unit 210, the fan-out line FOL, and the gate control line GCL may be located in the non-display area NDA. The gate driving unit 210 may generate a plurality of gate signals based on the gate control signal, and may sequentially supply the plurality of gate signals to the plurality of gate lines GL in a set order.

[0105] The fan-out line FOL may extend from the display driving unit 200 to the display area DA. The fan-out line FOL may supply a data voltage received from the display driving unit 200 to the plurality of data lines DL.

[0106] The gate control line GCL may extend from the display driving unit 200 to the gate driving unit 210. The gate control line GCL may supply a gate control signal received from the display driving unit 200 to the gate driving unit 210.

[0107] The sub-area SBA may include the display driving unit 200 , the display pad area DPA, and first and second touch pad areas TPA1 and TPA2 .

[0108] The display driving unit 200 may output a signal and a voltage for driving the display panel 100 to the fan-out line FOL. The display driving unit 200 may supply a data voltage to the data line DL through the fan-out line FOL. The data voltage may be supplied to a plurality of pixels PX, and the brightness of the plurality of pixels PX may be controlled. The display driving unit 200 may supply a gate control signal to the gate driving unit 210 through the gate control line GCL.

[0109] The display pad area DPA, the first touch pad area TPA1, and the second touch pad area TPA2 may be located at the edge of the sub-area SBA. The display pad area DPA, the first touch pad area TPA1, and the second touch pad area TPA2 may be electrically connected to the circuit board 300 by using a material such as an anisotropic conductive film or SAP (self-assembled anisotropic conductive adhesive).

[0110] The display pad area DPA may include a plurality of display pads DP. The plurality of display pads DP may be connected to a graphics system through the circuit board 300. The plurality of display pads DP may communicate with the circuit board 300 to receive digital video data, and may supply the digital video data to the display driving unit 200.

[0111] Figure 5 is a layout diagram illustrating a touch sensing layer in more detail according to some embodiments.

[0112] Figure 5 The illustration includes a touch sensing layer TSU including two types of electrodes (e.g., drive electrodes TE and sense electrodes RE), and focuses on a mutual capacitance method in which a touch drive signal is applied to the drive electrodes TE and the sense electrodes RE detect charge changes of mutual capacitance of each of a plurality of touch nodes TN.

[0113] For ease of explanation, Figure 5 , only the driving electrodes TE, the sensing electrodes RE, the dummy patterns DE, the touch lines TL1, TL2, and RL, and the touch pads TP1 and TP2 are illustrated.

[0114] refer to Figure 5The touch sensing layer TSU includes a touch sensing area TSA for detecting a user's touch and a touch peripheral area TPA arranged around the touch sensing area TSA. The touch sensing area TSA may be aligned with the display area ( Figure 1 and Figure 2 DA), and the touch peripheral area TPA may overlap with the non-display area ( Figure 1 and Figure 2 overlap with the NDA).

[0115] The touch sensing area TSA includes driving electrodes TE, sensing electrodes RE, and dummy patterns DE. The driving electrodes TE and the sensing electrodes RE may be electrodes for forming mutual capacitance to sense a touch of an object or a person.

[0116] The sensing electrodes RE may be arranged in parallel in the first direction DR1 and the second direction DR2. The sensing electrodes RE may be electrically connected in the first direction DR1. The sensing electrodes RE adjacent in the first direction DR1 may be connected to each other. The sensing electrodes RE adjacent in the second direction DR2 may be electrically separated from each other. For this reason, a touch node TN where mutual capacitance is formed may be located at each intersection of the driving electrode TE and the sensing electrode RE. A plurality of touch nodes TN may correspond to the intersections of the driving electrode TE and the sensing electrode RE.

[0117] The driving electrodes TE may be arranged in parallel in the first direction DR1 and the second direction DR2. The driving electrodes TE adjacent to each other in the first direction DR1 may be electrically separated from each other. The driving electrodes TE may be electrically connected in the second direction DR2. Figure 6 As shown in FIG. 1 , the driving electrodes TE adjacent to each other in the second direction DR2 may be connected to each other through the first connection electrode BE1 .

[0118] Each of the dummy patterns DE may be surrounded by the driving electrode TE or the sensing electrode RE. Each of the dummy patterns DE may be electrically separated from the driving electrode TE or the sensing electrode RE. Each of the dummy patterns DE may be spaced apart from the driving electrode TE or the sensing electrode RE. Each of the dummy patterns DE may be electrically floating.

[0119] although Figure 5 The driving electrode TE, the sensing electrode RE, and the dummy pattern DE are each shown to have a rhombus planar shape, but the present specification is not limited thereto. For example, each of the driving electrode TE, the sensing electrode RE, and the dummy pattern DE may have a planar shape such as a rectangle, a polygon other than a rhombus and a rectangle, a circle, or an ellipse.

[0120] The touch lines TL1, TL2, and RL may be located in the touch peripheral area TPA. The touch lines TL1, TL2, and RL include a touch sensing line RL connected to the sensing electrode RE and first and second touch driving lines TL1 and TL2 connected to the driving electrode TE.

[0121] The sensing electrodes RE located at one side of the touch sensing area TSA may be connected to the touch sensing lines RL one by one. Figure 5 As shown in FIG. 1 , among the sensing electrodes RE electrically connected in the first direction DR1, the sensing electrode RE located at the right end may be connected to the touch sensing line RL. The touch sensing line RL may be connected to the second touch pad TP2 one by one. Therefore, the touch drive unit ( Figure 2 400) in can be electrically connected to the sensing electrode RE.

[0122] The driving electrodes TE located on one side of the touch sensing area TSA are connected one-to-one to the first touch driving line TL1, and the driving electrodes TE located on the other side of the touch sensing area TSA may be connected one-to-one to the second touch driving line TL2. Figure 5 As shown in FIG. 1 , among the driving electrodes TE electrically connected in the second direction DR2, the driving electrode TE located at the lower end is connected to the first touch driving line TL1, and the driving electrode TE located at the upper end may be connected to the second touch driving line TL2. The second touch driving line TL2 may be connected to the driving electrode TE at the upper side of the touch sensing area TSA via the left outer side of the touch sensing area TSA.

[0123] The first touch drive line TL1 and the second touch drive line TL2 may be connected to the first touch pad TP1 one-to-one. Therefore, the touch drive unit 400 may be electrically connected to the drive electrode TE. Since the drive electrode TE is connected to the touch drive lines TL1 and TL2 on both sides of the touch sensing area TSA to receive the touch drive signal, the difference between the touch drive signal applied to the drive electrode TE located at the lower side of the touch sensing area TSA and the touch drive signal applied to the drive electrode TE located at the upper side of the touch sensing area TSA due to the RC delay of the touch drive signal may be prevented or reduced.

[0124] The first touch pad area TPA1 in which the first touch pad TP1 is disposed may be located at one side of the display pad area DPA in which the display pad DP is disposed. The second touch pad area TPA2 in which the second touch pad TP2 is disposed may be located at the other side of the display pad area DPA. The display pad DP may be electrically connected to the data line of the display panel 100.

[0125] The display pads DP, the first touch pads TP1, and the second touch pads TP2 may be connected to the display panel 100. Figure 2 The circuit board 300 shown in FIG. 3 corresponds to the pads of the circuit board 300. The circuit board 300 may be located on the display pad DP, the first touch pad TP1, and the second touch pad TP2. The display pad DP, the first touch pad TP1, and the second touch pad TP2 may be electrically connected to the circuit board 300 through an anisotropic conductive film and a conductive adhesive member. Therefore, the display pad DP, the first touch pad TP1, and the second touch pad TP2 may be electrically connected to the touch drive unit 400 located on the circuit board 300.

[0126] Although the second display area DA2 does not overlap the driving electrode TE and the sensing electrode RE, the present specification is not limited thereto. For example, the third display area DA3 may not overlap the driving electrode TE and the sensing electrode RE.

[0127] Because the driving electrode TE and the sensing electrode RE do not overlap with the second display area DA2, the driving electrode TE adjacent to the second display area DA2 may have a planar shape different from that of the driving electrode TE not adjacent to the second display area DA2. In addition, the area of ​​each of the driving electrodes TE adjacent to the second display area DA2 may be smaller than the area of ​​each of the driving electrodes TE not adjacent to the second display area DA2.

[0128] In addition, because the sensing electrode RE does not overlap with the second display area DA2, the sensing electrode RE adjacent to the second display area DA2 may have a planar shape different from the planar shape of the sensing electrode RE not adjacent to the second display area DA2. The area of ​​each of the sensing electrodes RE adjacent to the second display area DA2 may be smaller than the area of ​​each of the sensing electrodes RE not adjacent to the second display area DA2.

[0129] Figure 6 It is a detailed diagram Figure 5 Figure 1. Example layout of touch nodes.

[0130] refer to Figure 6 , the touch node TN may be defined as a crossing point of the driving electrode TE and the sensing electrode RE.

[0131] Since the driving electrodes TE and the sensing electrodes RE are located at the same layer, they may be spaced apart from each other. That is, a gap may be formed between the driving electrodes TE and the sensing electrodes RE adjacent to each other.

[0132] In addition, the dummy pattern DE may be located at the same layer as the driving electrode TE and the sensing electrode RE. That is, a gap may be formed between the driving electrode TE and the dummy pattern DE adjacent to each other and between the sensing electrode RE and the dummy pattern DE adjacent to each other.

[0133] The first connection electrode BE1 may be located at a different layer from the driving electrode TE and the sensing electrode RE. The first connection electrode BE1 may be bent at least once. Figure 5 In the embodiment, the first connection electrode BE1 has an angle bracket shape ("<" or ">"), but the planar shape of the first connection electrode BE1 is not limited thereto. Because the drive electrodes TE adjacent to each other in the second direction DR2 are connected by the plurality of first connection electrodes BE1, even if one of the plurality of first connection electrodes BE1 is disconnected, the drive electrodes TE adjacent to each other in the second direction DR2 can be stably connected. Figure 6 It is illustrated that adjacent driving electrodes TE are connected through two first connection electrodes BE1 , but the number of the first connection electrodes BE1 is not limited thereto.

[0134] The first connection electrode BE1 may overlap the drive electrode TE adjacent in the second direction DR2 in the third direction DR3 which is the thickness direction of the substrate SUB. The first connection electrode BE1 may overlap the sensing electrode RE in the third direction DR3. One side of the first connection electrode BE1 may be connected to one of the drive electrodes TE adjacent in the second direction DR2 through the first touch contact hole TCNT1. The other side of the first connection electrode BE1 may be connected to another drive electrode TE among the drive electrodes TE adjacent in the second direction DR2 through the first touch contact hole TCNT1.

[0135] Due to the plurality of first connection electrodes BE1, the driving electrode TE and the sensing electrode RE may be electrically separated from each other at the intersections thereof. As a result, mutual capacitance may be formed between the driving electrode TE and the sensing electrode RE.

[0136] Each of the driving electrode TE, the sensing electrode RE, and the first connection electrode BE1 may have a planar shape of a grid structure or a mesh structure. In addition, each of the dummy patterns DE may have a planar shape of a grid structure or a mesh structure. As a result, each of the driving electrode TE, the sensing electrode RE, the first connection electrode BE1, and the dummy pattern DE may not overlap with each of the light emitting areas EA11, EA12, EA13, and EA14 of the pixel PX. Therefore, the light emitted from the light emitting areas EA11, EA12, EA13, and EA14 may not be blocked by the driving electrode TE, the sensing electrode RE, the first connection electrode BE1, and the dummy pattern DE, thereby preventing or reducing the reduction in the brightness of the light.

[0137] Each of the pixels PX includes a first light emitting area EA11 emitting light of a first color, a second light emitting area EA12 emitting light of a second color, a third light emitting area EA13 emitting light of a third color, and a fourth light emitting area EA14 emitting light of the second color. For example, the first color may be red, the second color may be green, and the third color may be blue. Figure 6 The second and fourth emission regions EA12 and EA14 of the pixel PX are shown to emit light of the same color, but the present specification is not limited thereto. That is, the second and fourth emission regions EA12 and EA14 of the pixel PX may emit light of different colors.

[0138] The first light emitting area EA11 and the second light emitting area EA12 of each of the pixels PX may be adjacent to each other in the fourth direction DR4, and the third light emitting area EA13 and the fourth light emitting area EA14 may be adjacent to each other in the fourth direction DR4. The first light emitting area EA11 and the fourth light emitting area EA14 of each of the pixels PX may be adjacent to each other in the fifth direction DR5, and the second light emitting area EA12 and the third light emitting area EA13 may be adjacent to each other in the fifth direction DR5.

[0139] Each of the first light emitting area EA11, the second light emitting area EA12, the third light emitting area EA13, and the fourth light emitting area EA14 may have a rhombus plane shape or a rectangular plane shape, but is not limited thereto. Each of the first light emitting area EA11, the second light emitting area EA12, the third light emitting area EA13, and the fourth light emitting area EA14 may have a polygonal, circular, or elliptical plane shape other than a rectangle and a rhombus. In addition, although Figure 6 It is illustrated that the area of ​​the third light emitting area EA13 is the largest and the areas of the second light emitting area EA12 and the fourth light emitting area EA14 are the smallest, but the specification is not limited thereto.

[0140] The second light emitting area EA12 and the fourth light emitting area EA14 may be located in odd rows. In each of the odd rows, the second light emitting area EA12 and the fourth light emitting area EA14 may be arranged side by side in the first direction DR1. The second light emitting area EA12 and the fourth light emitting area EA14 may be alternately arranged in each odd row. Each of the second light emitting areas EA12 has a long side in the fourth direction DR4 and a short side in the fifth direction DR5, and each of the fourth light emitting areas EA14 may have a short side in the fourth direction DR4 and a long side in the fifth direction DR5. The fifth direction DR5 is a direction between the first direction DR1 and the second direction DR2, and may be a direction inclined at 45 degrees relative to the first direction DR1. The fourth direction DR4 may be a direction perpendicular to the fifth direction DR5.

[0141] The first and third light emitting areas EA11 and EA13 may be located in even-numbered rows. In each of the even-numbered rows, the first and third light emitting areas EA11 and EA13 may be arranged side by side in the first direction DR1. The first and third light emitting areas EA11 and EA13 may be alternately disposed in each of the even-numbered rows.

[0142] The second and fourth light emitting regions EA12 and EA14 may be located in odd columns. In each of the odd columns, the second and fourth light emitting regions EA12 and EA14 may be arranged side by side in the second direction DR2. The second and fourth light emitting regions EA12 and EA14 may be alternately disposed in each of the odd columns.

[0143] The first and third light emitting regions EA11 and EA13 may be arranged in even columns. In each of the even columns, the first and third light emitting regions EA11 and EA13 may be arranged side by side in the second direction DR2. The first and third light emitting regions EA11 and EA13 may be alternately disposed in each of the even columns.

[0144] Figure 7 The diagram is along Figure 6 A cross-sectional view of an example of a display panel taken along line BB'.

[0145] refer to Figure 7 , the thin film transistor layer TFTL may be located on the substrate SUB.

[0146] The thin film transistor layer TFTL may include a first buffer layer BF1, a bottom metal layer BML, a second buffer layer BF2, a thin film transistor TFT, a gate insulating layer GI, a first interlayer insulating layer ILD1, a capacitor electrode CPE, a second interlayer insulating layer ILD2, a first connection electrode CNE1, a first protection layer PAS1, a second connection electrode CNE2, and a second protection layer PAS2.

[0147] The first buffer layer BF1 may be located on the substrate SUB. The first buffer layer BF1 may include an inorganic film capable of preventing or reducing the penetration of air or moisture. For example, the first buffer layer BF1 may include a plurality of stacked inorganic films.

[0148] The bottom metal layer BML may be located on the first buffer layer BF1. For example, the bottom metal layer BML may be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0149] The second buffer layer BF2 may cover the first buffer layer BF1 and the bottom metal layer BML. The second buffer layer BF2 may include an inorganic film capable of preventing or reducing the penetration of air, moisture or other contaminants. For example, the second buffer layer BF2 may include a plurality of stacked inorganic films.

[0150] The thin film transistor TFT may be located on the second buffer layer BF2 and constitute a pixel circuit of each of the plurality of pixels. For example, the thin film transistor TFT may be a driving transistor or a switching transistor of the pixel circuit. The thin film transistor TFT may include a semiconductor layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0151] The semiconductor layer ACT may be located on the second buffer layer BF2. The semiconductor layer ACT may overlap the bottom metal layer BML and the gate electrode GE in the thickness direction and may be insulated from the gate electrode GE by the gate insulating layer GI. In a portion of the semiconductor layer ACT, the material of the semiconductor layer ACT may be conductive to form a source electrode SE and a drain electrode DE.

[0152] The gate electrode GE may be located on the gate insulating layer GI. The gate electrode GE may overlap the semiconductor layer ACT with the gate insulating layer GI interposed therebetween.

[0153] The gate insulating layer GI may be on the semiconductor layer ACT. For example, the gate insulating layer GI may cover the semiconductor layer ACT and the second buffer layer BF2 and may insulate the semiconductor layer ACT from the gate electrode GE. The gate insulating layer GI may include a contact hole through which the first connection electrode CNE1 passes.

[0154] The first interlayer insulating layer ILD1 may cover the gate electrode GE and the gate insulating layer GI. The first interlayer insulating layer ILD1 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the first interlayer insulating layer ILD1 may be connected to the contact hole of the gate insulating layer GI and the contact hole of the second interlayer insulating layer ILD2.

[0155] The capacitor electrode CPE may be located on the first interlayer insulating layer ILD1 , and may overlap the gate electrode GE in a thickness direction, and the capacitor electrode CPE and the gate electrode GE may form a capacitor.

[0156] The second interlayer insulating layer ILD2 may cover the capacitor electrode CPE and the first interlayer insulating layer ILD1. The second interlayer insulating layer ILD2 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second interlayer insulating layer ILD2 may be connected to the contact hole of the first interlayer insulating layer ILD1 and the contact hole of the gate insulating layer GI.

[0157] The first connection electrode CNE1 may be located on the second interlayer insulating layer ILD2. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT and the second connection electrode CNE2. The first connection electrode CNE1 is inserted into a contact hole formed in the second interlayer insulating layer ILD2, the first interlayer insulating layer ILD1, and the gate insulating layer GI, and may contact the drain electrode DE of the thin film transistor TFT.

[0158] The first protection layer PAS1 may cover the first connection electrode CNE1 and the second interlayer insulating layer ILD2. The first protection layer PAS1 may protect the thin film transistor TFT. The first protection layer PAS1 may include a contact hole through which the second connection electrode CNE2 passes.

[0159] The second connection electrode CNE2 may be located on the first protection layer PAS1. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 and the pixel electrode AE ​​of the light emitting element ED. The second connection electrode CNE2 may be inserted into a contact hole formed in the first protection layer PAS1 to contact the first connection electrode CNE1.

[0160] The second protection layer PAS2 may cover the second connection electrode CNE2 and the first protection layer PAS1. The second protection layer PAS2 may include a contact hole through which the pixel electrode AE ​​of the light emitting element ED passes.

[0161] The light emitting element layer EML may be located on the thin film transistor layer TFTL. The light emitting element layer EML may include a light emitting element ED and a pixel defining layer PDL. The light emitting element ED may include a pixel electrode AE, a light emitting layer EL, and a common electrode CE.

[0162] The pixel electrode AE ​​may be located on the second protection layer PAS2. The pixel electrode AE ​​may be arranged to overlap one of the opening units OPE1, OPE2, and OPE3 of the pixel defining layer PDL. The pixel electrode AE ​​may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2.

[0163] The light-emitting layer EL may be located on the pixel electrode AE. For example, the light-emitting layer EL may be an organic light-emitting layer made of an organic material, but is not limited thereto. When the light-emitting layer EL corresponds to the organic light-emitting layer, the thin film transistor TFT applies a voltage (e.g., a set or predetermined voltage) to the pixel electrode AE ​​of the light-emitting element ED. Then, the common electrode CE of the light-emitting element ED receives a common voltage or a cathode voltage, holes and electrons may move to the light-emitting layer EL through the hole transport layer and the electron transport layer, respectively, and holes and electrons may recombine with each other in the light-emitting layer EL to emit light.

[0164] The common electrode CE may be located on the light emitting layer EL. For example, the common electrode CE may be implemented in the form of an electrode common to all pixels without being distinguished by a plurality of pixels. The common electrode CE may be located on the light emitting layer EL in the first to third light emitting areas EA11, EA12, and EA13, and may be located on the pixel defining layer PDL in areas other than the first to third light emitting areas EA11, EA12, and EA13.

[0165] In the top emission structure, the common electrode CE may be formed of a transparent conductive material (TCM) such as ITO or IZO that can transmit light, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the common electrode CE is formed of a semi-transmissive reflective metal material, the light emitting efficiency may be improved through a microcavity.

[0166] The common electrode CE may receive a common voltage or a low potential voltage. When the pixel electrode AE ​​receives a voltage corresponding to the data voltage and the common electrode CE receives a low potential voltage, a potential difference is formed between the pixel electrode AE ​​and the common electrode CE, so that the light emitting layer EL can emit light.

[0167] The pixel defining layer PDL may be located on a portion of the pixel electrode AE ​​and the second protective layer PAS2. The pixel defining layer PDL may define the first to third light emitting areas EA11, EA12 and EA13, and their areas or sizes may be different from each other. The pixel defining layer PDL may isolate and insulate the pixel electrodes AE of the plurality of light emitting elements ED. The pixel defining layer PDL may include a light absorbing material to prevent or reduce light reflection. For example, the pixel defining layer PDL may include a polyimide (PI)-based adhesive and a mixture of red, green and blue pigments. Alternatively, the pixel defining layer PDL may include a cardo-based adhesive resin and a mixture of a lactam-based black pigment and a blue pigment. Alternatively, the pixel defining layer PDL may include carbon black.

[0168] The capping layer CPL may be located on the common electrode CE. The capping layer CPL may include at least one inorganic layer for preventing or reducing the penetration of oxygen, moisture or other contaminants into the light emitting element layer EML. According to some embodiments, the capping layer CPL may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and / or silicon oxynitride.

[0169] The encapsulation layer TFEL may be located on the capping layer CPL to cover the plurality of light emitting elements ED. The encapsulation layer TFEL may include at least one inorganic layer for preventing or reducing the penetration of oxygen, moisture or other contaminants into the light emitting element layer EML. The encapsulation layer TFEL may include at least one organic layer for protecting the light emitting element layer EML from foreign matter such as dust.

[0170] According to some embodiments, the encapsulation layer TFEL may include a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3. The first and third encapsulation layers TFEL1 and TFEL3 may be inorganic encapsulation layers, and the second encapsulation layer TFEL2 therebetween may be an organic encapsulation layer.

[0171] Each of the first encapsulation layer TFEL1 and the third encapsulation layer TFEL3 may include one or more inorganic insulating materials. The inorganic insulating material may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0172] The second encapsulation layer TFEL2 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide and polyethylene. For example, the second encapsulation layer TFEL2 may include an acrylic resin such as polymethyl methacrylate or polyacrylic acid. The second encapsulation layer TFEL2 may be formed by curing a monomer or coating a polymer. The second encapsulation layer TFEL2 may play a role in planarization.

[0173] The touch sensing layer TSU may be located on the encapsulation layer TFEL. The touch sensing layer TSU includes a first touch insulating film TINS1, a first connection electrode BE1, a second touch insulating film TINS2, a driving electrode TE, a sensing electrode RE, and a third touch insulating film TINS3.

[0174] The first touch insulating film TINS1 may be formed of an inorganic layer such as a silicon nitride layer, a silicon nitride oxide layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0175] The first connection electrode BE1 may be located on the first touch insulating film TINS1. The first connection electrode BE1 may be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0176] The second touch insulating film TINS2 is located on the first connection electrode BE1. The second touch insulating film TINS2 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. Alternatively, the second touch insulating film TINS2 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0177] The driving electrode TE and the sensing electrode RE may be located on the second touch insulating film TINS2. Figure 5The dummy pattern DE, the first touch drive line TL1, the second touch drive line TL2, and the touch sensing line RL shown in FIG. 2 may also be located on the second touch insulating film TINS2. The driving electrode TE and the sensing electrode RE may be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0178] The driving electrode TE and the sensing electrode RE may overlap the first connection electrode BE1 in the third direction DR3. The driving electrode TE may be connected to the first connection electrode BE1 through a first touch contact hole TCNT1 penetrating the second touch insulating film TINS2.

[0179] The third touch insulating film TINS3 is formed on the driving electrode TE and the sensing electrode RE. The third touch insulating film TINS3 may be used to flatten a step formed by the driving electrode TE, the sensing electrode RE, and the first connection electrode BE1. The third touch insulating film TINS3 may be formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0180] The light conversion layer OCL may be located on the touch sensing layer TSU.

[0181] Therefore, due to the base capacitance of the second encapsulation layer TFEL2 , the touch sensitivity of the touch sensing layer TSU may be reduced.

[0182] The basic capacitance may be inversely proportional to the thickness of the second encapsulation layer TFEL2 and directly proportional to the dielectric constant of the second encapsulation layer TFEL2. Therefore, the method of increasing the thickness of the second encapsulation layer TFEL2 and the method of reducing the dielectric constant of the second encapsulation layer TFEL2 may be considered to reduce the basic capacitance value.

[0183] However, when the thickness of the second encapsulation layer TFEL2 is increased, the front transmittance of light emitted from the light emitting element layer EML may be reduced.

[0184] Therefore, it may be desirable to reduce the dielectric constant of the second encapsulation layer TFEL2 and simultaneously (or concurrently) reduce the thickness of the second encapsulation layer TFEL2 to reduce the base capacitance value of the second encapsulation layer TFEL2 while maintaining the front transmittance of light emitted from the light emitting element layer EML at an appropriate level.

[0185] According to some embodiments, the dielectric constant of the second encapsulation layer TFEL2 may be in the range of about 2.0 to about 3.0, and the thickness of the second encapsulation layer TFEL2 may be 8 μm to 9 μm or 10 μm to 11 μm. For example, the dielectric constant of the second encapsulation layer TFEL2 may be 2.5, and the thickness of the second encapsulation layer TFEL2 may be 8.8 μm.

[0186] Meanwhile, as a method of adjusting the thickness of the second encapsulation layer TFEL2 to improve the front transmittance of the light emitted from the light emitting element layer EML, a method of adjusting the spacing between the nozzles of the organic material coating the second encapsulation layer TFEL2 may be considered. However, in this process, the spreading property of the organic material may be poor. When the spreading property of the organic material is poor, the uniformity of the second encapsulation layer TFEL2 deteriorates, and at the same time, a color spot defect may be caused on the display surface.

[0187] An inorganic insulating layer having a refractive index similar to that of the second encapsulation layer TFEL2 may be added to the lower surface of the second encapsulation layer TFEL2 to improve the spreadability of the organic material.

[0188] Figure 8 is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0189] refer to Figure 8 , the display device 10 may include a structure in which a light-emitting element ED and a plurality of inorganic or organic layers located thereon are stacked. For example, the display device 10 may include a capping layer CPL, a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the common electrode CE of the light-emitting element ED. The capping layer CPL directly located on the light-emitting element ED may include an inorganic insulating material. The light emitted from the light-emitting element ED passes through the capping layer CPL and the first encapsulation layer TFEL1, and the first encapsulation layer TFEL1 may include a plurality of layers having different refractive indices. Since the capping layer CPL and the multi-layer first encapsulation layer TFEL1 have different refractive indices, reflection of light may occur at the interface between them. The display device 10 arranges an optical layer capable of reflecting light on the light-emitting element ED using layers having different refractive indices, so that the light efficiency (or luminous efficiency) and viewing angle characteristics of the light-emitting element ED are desired.

[0190] According to some embodiments, in the display device 10 , the first encapsulation layer TFEL1 may include a plurality of inorganic insulating layers 110 , 120 , 130 , and 140 . The plurality of inorganic insulating layers 110 , 120 , 130 , and 140 may include an optical layer 110 , a moisture barrier layer 120 , an auxiliary layer 130 , and an upper layer 140 .

[0191] The optical layer 110 can function as an optical layer by reflecting light at the interface between it and the adjacent layer. The first encapsulation layer TFEL1 may include an optical layer 110, a moisture barrier layer 120, an auxiliary layer 130, and an upper layer 140 sequentially arranged on the capping layer CPL. The layers sequentially arranged from the capping layer CPL to the upper layer 140 may include different materials and may have different refractive indices and thicknesses. The light emitted from the light emitting element ED is emitted from the capping layer CPL through the upper layer 140 in an upward direction, and when the light passes through the interface of the layers with different refractive indices, it may be partially reflected and refracted. By adjusting the refractive index and thickness of each layer located on the light emitting element ED, the luminous efficiency and viewing angle characteristics of the light emitted from the light emitting element ED can be controlled to the desired conditions.

[0192] Hereinafter, as optical layers located on the light emitting element ED, the capping layer CPL and the plurality of inorganic insulating layers 110 , 120 , 130 , and 140 of the first encapsulation layer TFEL1 will be described.

[0193] The capping layer CPL may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y The capping layer CPL may have a refractive index n1 of 1.60 to 2.30 and to For example, the capping layer CPL may have a refractive index n1 of 2.0 and a Thickness t1.

[0194] According to some embodiments, in the display device 10, the plurality of inorganic insulating layers located on the capping layer CPL may include an insulating layer having a relatively high refractive index and an insulating layer having a relatively low refractive index. Among the plurality of inorganic insulating layers, the inorganic insulating layers arranged to be in contact with each other may have different refractive indices. The plurality of inorganic insulating layers may have a structure in which an inorganic insulating layer having a high refractive index and an inorganic insulating layer having a low refractive index are stacked on each other. For example, the capping layer CPL may be a high refractive index layer having a relatively high refractive index, the optical layer 110 of the first encapsulation layer TFEL1 may be a low refractive index layer, and the moisture barrier layer 120 may be a high refractive index layer. The auxiliary layer 130 may be a medium refractive layer having a refractive index between the refractive index of the optical layer 110 and the refractive index of the moisture barrier layer 120.

[0195] The optical layer 110 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y). The optical layer 110 may be located on the capping layer CPL and may have a refractive index lower than that of the capping layer CPL. For example, the optical layer 110 may have a refractive index n2 of 1.20 to 1.62 and to According to some embodiments, the optical layer 110 may include silicon oxynitride (SiO x N y ), has a refractive index n2 of 1.57, and has Thickness t2.

[0196] The capping layer CPL and the optical layer 110 described above may be layers that have a major influence on the optical characteristics of the display device 10. The thickness and refractive index of these layers may need to be precisely controlled to achieve the resonance characteristics of each target wavelength. The range of the thickness and refractive index of each layer may be a range designed to enable the display device 10 to have target optical characteristics.

[0197] The moisture barrier layer 120 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The moisture barrier layer 120 may be located on the optical layer 110 and have a refractive index higher than that of the optical layer 110. For example, the moisture barrier layer 120 may have a refractive index n3 of 1.70 to 1.90 and to According to some embodiments, the moisture barrier layer 120 may include silicon nitride (SiN x ), has a refractive index n3 of 1.89, and has Thickness t3.

[0198] The moisture barrier layer 120 may be a layer having a relatively small influence on the optical characteristics in the first encapsulation layer TFEL1, and may be a layer for ensuring reliability such as preventing or reducing moisture penetration and oxidation. Accordingly, the moisture barrier layer 120 may have a relatively large thickness (t3, or larger).

[0199] The auxiliary layer 130 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y The auxiliary layer 130 is located on the moisture barrier layer 120 and may have a refractive index smaller than that of the moisture barrier layer 120. For example, the auxiliary layer 130 may have a refractive index n4 of 1.50 to 1.80 and to According to some embodiments, the auxiliary layer 130 may include silicon oxynitride (SiO x N y ), has a refractive index n4 of 1.70, and has Thickness t4.

[0200] The light generated by the film thickness distribution of the optical layer 110 destructively interferes with the light of the auxiliary layer 130 to further reduce the distribution of the movement trajectory in the color temperature direction on the color coordinates.

[0201] The upper layer 140 is located on the auxiliary layer 130. The upper layer 140 may include O-rich silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ) According to some embodiments, the upper layer 140 may include O-rich SiO x N y For example, the upper layer 140 may have a refractive index n5 of 1.50 to 1.69 and to The upper layer 140 may have a refractive index n5 of 1.50 and The refractive index n5 of the upper layer 140 may be less than the refractive index n4 of the auxiliary layer 130 , and the upper layer 140 may be thicker than the auxiliary layer 130 .

[0202] The upper layer 140 may not have moisture permeability. During a process of forming the second encapsulation layer TFEL2 by coating and curing a monomer, the upper layer 140 may control a material constituting the second encapsulation layer TFEL2.

[0203] As described above, the upper layer 140 may not have moisture permeability and may not have an optical function alone, and the refractive index of the upper layer 140 may be substantially the same as the refractive index of the second encapsulation layer TFEL2. When the refractive index of the upper layer 140 is substantially the same as the refractive index of the second encapsulation layer TFEL2, this means that the difference in refractive index between the upper layer 140 and the second encapsulation layer TFEL2 is less than 0.05.

[0204] The second encapsulation layer TFEL2 may be an organic insulating layer. The second encapsulation layer TFEL2 may have a refractive index n6 of 2.0 to 3.0 and a thickness t6 of 8 μm to 12 μm. According to some embodiments, the second encapsulation layer TFEL2 may have a refractive index n6 of 1.5 and a thickness t6 of 8.8 μm or 11 μm. The second encapsulation layer TFEL2 may have a dielectric constant of 3.1 or less. According to some embodiments, the second encapsulation layer TFEL2 may have a dielectric constant of 3.1 or 2.5.

[0205] The third encapsulation layer TFEL3 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ) at least one of the following. The third encapsulation layer TFEL3 may have a refractive index n7 of 1.89 and Thickness t7.

[0206] In the display device 10, the thickness of the capping layer CPL and the multiple inorganic insulating layers 110, 120, 130 and 140 of the first encapsulation layer TFEL1 can be designed within a specific range depending on optical characteristics, reliability, and tact time, etc. In the inorganic insulating layer, as the refractive index is high and the thickness is thick, the reliability characteristics due to moisture permeability are improved, but the tact time may increase, the light absorption may increase, and the thickness distribution may increase. In particular, when the optical resonant cavity length increases, it may be difficult to ensure the resonant characteristics because the optical path is longer than the coherence length or a high-order resonance is used. In addition, because the final optical characteristics vary according to the spectrum of the light when the light passes through multiple layers in the display device 10, the thickness and refractive index of the inorganic insulating layer may need to be finely adjusted to adjust the resonant characteristics of each wavelength depending on the material of the inorganic insulating layer.

[0207] The display device 10 has a structure in which the capping layer CPL, the optical layer 110, and the moisture barrier layer 120 are sequentially stacked, and layers having high refractive indexes and low refractive indexes may be stacked from the capping layer CPL to the moisture barrier layer 120. Since a plurality of layers having different refractive indexes are sequentially stacked, an interface capable of refracting or reflecting light may be formed at the interface of the capping layer CPL, the optical layer 110, and the moisture barrier layer 120 arranged against each other. In particular, the optical layer 110 and the moisture barrier layer 120 may have different refractive indices, respectively including silicon oxynitride (SiO x N y ) and silicon nitride (SiN x ) to form a plurality of reflective interfaces with the capping layer CPL. The display device 10 according to some embodiments includes a stacked structure of layers having different refractive indices as described above, so that the light efficiency of the light emitting element ED or the light emitting efficiency and viewing angle characteristics of the light emitted from the light emitting element ED can be controlled as needed.

[0208] According to reference Figure 8 The described embodiments can reduce afterimages by effectively improving the optical properties of green light.

[0209] Fig. 9 is a cross-sectional view illustrating in detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments. Fig.10is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0210] refer to Fig. 9 , except that the structure of the first encapsulation layer TFEL1 is different from Figure 8 The display device 10 according to some embodiments may be the same except for the configuration of the embodiment of FIG. 1 . Accordingly, the first encapsulation layer TFEL1 will be described. Figure 8 The structure of the first encapsulation layer TFEL1 is structured differently.

[0211] The first encapsulation layer TFEL1 may include a plurality of layers having different refractive indices. Since the capping layer CPL and the multi-layer first encapsulation layer TFEL1 have different refractive indices, light may be reflected at the interface therebetween. The display device 10 may control the light efficiency (or luminous efficiency) and viewing angle characteristics of the light emitting element ED as required by arranging an optical layer capable of reflecting light on the light emitting element ED using layers having different refractive indices.

[0212] According to some embodiments, the first encapsulation layer TFEL1 in the display device 10 may include a plurality of inorganic insulating layers 110, 111, 120, and 140. The plurality of inorganic insulating layers 110, 111, 120, and 140 include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, and an upper layer 140 sequentially arranged on the capping layer CPL. The layers sequentially arranged from the capping layer CPL to the upper layer 140 may include different materials and may have different refractive indices and thicknesses.

[0213] In addition to the capping layer CPL, the first optical layer 110 and the second optical layer 111 may also serve as optical layers by allowing light to be reflected at an interface therebetween.

[0214] The first optical layer 110 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The first optical layer 110 may be located on the capping layer CPL and may have a refractive index lower than that of the capping layer CPL. For example, the first optical layer 110 may have a refractive index n2 of 1.20 to 1.62 and to According to some embodiments, the first optical layer 110 may include silicon oxynitride (SiO x N y ), has a refractive index n2 of 1.57, and has Thickness t2.

[0215] The second optical layer 111 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The second optical layer 111 may be located on the first optical layer 110 and have a refractive index higher than that of the first optical layer 110. For example, the second optical layer 111 may have a refractive index n2-1 of 1.70 to 1.90 and to According to some embodiments, the second optical layer 111 may include silicon nitride (SiN x ), has a refractive index n2-1 of 1.89, and has The second optical layer 111 may be thicker than the first optical layer 110 .

[0216] The capping layer CPL, the first optical layer 110, and the second optical layer 111 described above may be layers that have a major influence on the optical characteristics of the display device 10. The thickness and refractive index of these layers may need to be precisely controlled to achieve the resonance characteristics of each target wavelength. The range of the thickness and refractive index of each layer may be a range designed to enable the display device 10 to have target optical characteristics.

[0217] The moisture barrier layer 120 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The moisture barrier layer 120 may be located on the second optical layer 111 and have a refractive index lower than that of the second optical layer 111. For example, the moisture barrier layer 120 may have a refractive index n3 of 1.50 to 1.70 and to According to some embodiments, the moisture barrier layer 120 may include silicon nitride (SiN x ), has a refractive index n3 of 1.62, and has Thickness t3.

[0218] The moisture barrier layer 120 may be a layer having a relatively small influence on the optical characteristics in the first encapsulation layer TFEL1, and may be a layer for ensuring reliability such as preventing or reducing moisture penetration and oxidation. Accordingly, the moisture barrier layer 120 may have a relatively large thickness (t3, or larger).

[0219] The upper layer 140 may include O-rich silicon oxide (SiO x ), Silicon Nitride (SiN x) and silicon oxynitride (SiO x N y ) According to some embodiments, the upper layer 140 may include O-rich SiO x N y The upper layer 140 may have a refractive index n5 of 1.50 and The refractive index n5 of the upper layer 140 may be less than the refractive index n3 of the moisture barrier layer 120 .

[0220] like Fig.10 As shown in Fig. 9 The upper layer 140 is omitted in the construction of the first encapsulation layer TFEL1. According to some embodiments, because the refractive index of the moisture barrier layer 120 is 1.62 and the refractive index of the second encapsulation layer TFEL2 is 1.5, the difference in refractive index between the moisture barrier layer 120 and the second encapsulation layer TFEL2 is relatively insignificant. Therefore, the upper layer 140 can be omitted.

[0221] according to Fig. 9 and Fig.10 In the embodiment, the power consumption of the display device 10 can be relatively reduced by effectively improving the optical characteristics of the green light.

[0222] Fig.11 is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0223] refer to Fig.11 In addition to the first encapsulation layer TFEL1 including a buffer layer, the display device 10 according to some embodiments may be Fig. 9 Accordingly, the first encapsulation layer TFEL1 will be described. Fig. 9 The structure of the first encapsulation layer TFEL1 is structured differently.

[0224] The first encapsulation layer TFEL1 may include a plurality of layers having different refractive indices. Since the capping layer CPL and the multi-layer first encapsulation layer TFEL1 have different refractive indices, light may be reflected at the interface therebetween. The display device 10 arranges an optical layer capable of reflecting light on the light emitting element ED using layers having different refractive indices, so that the light efficiency (or luminous efficiency) and viewing angle characteristics of the light emitting element ED may be controlled as needed.

[0225] According to some embodiments, the first encapsulation layer TFEL1 in the display device 10 may include a plurality of inorganic insulating layers 110, 111, 120, 131, and 140. The plurality of inorganic insulating layers 110, 111, 120, 131, and 140 may include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, a buffer layer 131, and an upper layer 140 sequentially arranged on the capping layer CPL. The layers sequentially arranged from the capping layer CPL to the upper layer 140 may include different materials and may have different refractive indices and thicknesses.

[0226] In addition to the capping layer CPL, the first optical layer 110 and the second optical layer 111 may also serve as optical layers by allowing light to be reflected at an interface therebetween.

[0227] The first optical layer 110 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The first optical layer 110 may be located on the capping layer CPL and may have a refractive index lower than that of the capping layer CPL. For example, the first optical layer 110 may have a refractive index n2 of 1.20 to 1.62 and to According to some embodiments, the first optical layer 110 may include silicon oxynitride (SiO x N y ), has a refractive index n2 of 1.57, and has Thickness t2.

[0228] The second optical layer 111 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The second optical layer 111 may be located on the first optical layer 110 and have a refractive index higher than that of the first optical layer 110. For example, the second optical layer 111 may have a refractive index n2-1 of 1.70 to 1.90 and to According to some embodiments, the second optical layer 111 may include silicon nitride (SiN x ), has a refractive index n2-1 of 1.89, and has Thickness t2-1.

[0229] The capping layer CPL, the first optical layer 110, and the second optical layer 111 described above may be layers that have a major influence on the optical characteristics of the display device 10. The thickness and refractive index of these layers may need to be precisely controlled to achieve the resonance characteristics of each target wavelength. The range of the thickness and refractive index of each layer may be a range designed to enable the display device 10 to have target optical characteristics.

[0230] The moisture barrier layer 120 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ). The moisture barrier layer 120 may be located on the second optical layer 111 and have a refractive index lower than that of the second optical layer 111. For example, the moisture barrier layer 120 may have a refractive index n3 of 1.50 to 1.70 and to According to some embodiments, the moisture barrier layer 120 may include silicon nitride (SiN x ), has a refractive index n3 of 1.62, and has Thickness t3.

[0231] The moisture barrier layer 120 may be a layer having a relatively small influence on the optical characteristics in the first encapsulation layer TFEL1, and may be a layer for ensuring reliability such as preventing or reducing moisture penetration and oxidation. Accordingly, the moisture barrier layer 120 may have a relatively large thickness (t3, or larger).

[0232] The buffer layer 131 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ) at least one of the above. The buffer layer 131 is located on the moisture barrier layer 120 and may have a refractive index smaller than that of the moisture barrier layer 120. For example, the buffer layer 131 may have a refractive index n4-1 of 1.48 to 1.69 and to According to some embodiments, the buffer layer 131 may include silicon oxynitride (SiO x N y ), has a refractive index n4-1 of 1.57, and has The thickness is t4-1.

[0233] The buffer layer 131 can reduce dispersion in color coordinates.

[0234] The upper layer 140 is located on the buffer layer 131. The upper layer 140 may include O-rich silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ) According to some embodiments, the upper layer 140 may include O-rich SiO x N y The upper layer 140 may have a refractive index n5 of 1.50 and The refractive index n5 of the upper layer 140 may be less than the refractive index n4-1 of the buffer layer 131.

[0235] By adjusting the thickness and refractive index of the buffer layer 131 , the display device 10 can greatly reduce the dispersion of the movement trajectory in the color temperature direction in the color coordinate system and control it within a desired area.

[0236] Figures 12 to 15 is a cross-sectional view illustrating in more detail a stacked structure of a light emitting element and an encapsulation layer of a display device according to some embodiments.

[0237] according to Figures 12 to 15 The light emitting regions emitting light of different wavelengths of the embodiment include encapsulation layers having different stacking structures.

[0238] refer to Fig.12 , the display device 10 according to some embodiments includes a first light emitting area EA1, a second light emitting area EA2, and a third light emitting area EA3.

[0239] The first light emitting area EA1 includes a first light emitting element ED1 that emits light of a first wavelength. The central wavelength band of the first light emitting element ED1 has a range of 600nm to 680nm. The second light emitting area EA2 includes a second light emitting element ED2 that emits light of a second wavelength. The central wavelength band of the second light emitting element ED2 has a range of 500nm to 580nm. The third light emitting area EA3 includes a third light emitting element ED3 that emits light of a third wavelength. The central wavelength band of the third light emitting element ED3 has a range of 420nm to 480nm.

[0240] The light emitting areas EA1, EA2, and EA3 emitting light of different wavelengths may include first encapsulation layers having different stack structures.

[0241] For example, the stacking structures of the first encapsulation layer TFEL1 of the first light-emitting area EA1 and the second light-emitting area EA2 are identical to each other and are different from the stacking structure of the first encapsulation layer TFEL1-1 of the third light-emitting area EA3. The first light-emitting area EA1 may include a capping layer CPL, a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the first light-emitting element ED1. The first encapsulation layer TFEL1 may include an optical layer 110, a moisture barrier layer 120, an auxiliary layer 130, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the optical layer 110, the moisture barrier layer 120, the auxiliary layer 130, and the upper layer 140 Figure 8 Description. The second light-emitting area EA2 may include a capping layer CPL, a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the second light-emitting element ED2. The first encapsulation layer TFEL1 of the second light-emitting area EA2 has the same stacking structure as the first encapsulation layer TFEL1 of the first light-emitting area EA1. The third light-emitting area EA3 may include a capping layer CPL, a first encapsulation layer TFEL1-1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the third light-emitting element ED3. The first encapsulation layer TFEL1-1 of the third light-emitting area EA3 may include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the first optical layer 110, the second optical layer 111, the moisture barrier layer 120, and the upper layer 140 Fig. 9 Description.

[0242] refer to Fig.13 , the display device 10 according to some embodiments includes a first light emitting area EA1, a second light emitting area EA2, and a third light emitting area EA3.

[0243] The first light emitting area EA1 includes a first light emitting element ED1 that emits light of a first wavelength. The central wavelength band of the first light emitting element ED1 has a range of 600nm to 680nm. The second light emitting area EA2 includes a second light emitting element ED2 that emits light of a second wavelength. The central wavelength band of the second light emitting element ED2 has a range of 500nm to 580nm. The third light emitting area EA3 includes a third light emitting element ED3 that emits light of a third wavelength. The central wavelength band of the third light emitting element ED3 has a range of 420nm to 480nm.

[0244] The light emitting areas EA1, EA2, and EA3 emitting light of different wavelengths may include first encapsulation layers having different stack structures.

[0245] For example, the stacking structures of the first encapsulation layer TFEL1 of the first light-emitting area EA1 and the second light-emitting area EA2 are identical to each other and are different from the stacking structure of the first encapsulation layer TFEL1-2 of the third light-emitting area EA3. The first light-emitting area EA1 may include a capping layer CPL, a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the first light-emitting element ED1. The first encapsulation layer TFEL1 may include an optical layer 110, a moisture barrier layer 120, an auxiliary layer 130, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the optical layer 110, the moisture barrier layer 120, the auxiliary layer 130, and the upper layer 140 Figure 8 Description. The second light-emitting area EA2 may include a capping layer CPL, a first encapsulation layer TFEL1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the second light-emitting element ED2. The first encapsulation layer TFEL1 of the second light-emitting area EA2 has the same stacking structure as the first encapsulation layer TFEL1 of the first light-emitting area EA1. The third light-emitting area EA3 may include a capping layer CPL, a first encapsulation layer TFEL1-2, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the third light-emitting element ED3. The first encapsulation layer TFEL1-2 of the third light-emitting area EA3 may include a first optical layer 110, a second optical layer 111, and a moisture barrier layer 120 sequentially arranged on the capping layer CPL. The refractive index and thickness of the first optical layer 110, the second optical layer 111, and the moisture barrier layer 120 refer to Fig.10 Description.

[0246] refer to Fig.14 , the display device 10 according to some embodiments includes a first light emitting area EA1, a second light emitting area EA2, and a third light emitting area EA3.

[0247] The first light emitting area EA1 includes a first light emitting element ED1 that emits light of a first wavelength. The central wavelength band of the first light emitting element ED1 has a range of 600nm to 680nm. The second light emitting area EA2 includes a second light emitting element ED2 that emits light of a second wavelength. The central wavelength band of the second light emitting element ED2 has a range of 500nm to 580nm. The third light emitting area EA3 includes a third light emitting element ED3 that emits light of a third wavelength. The central wavelength band of the third light emitting element ED3 has a range of 420nm to 480nm.

[0248] The light emitting areas EA1, EA2, and EA3 emitting light of different wavelengths may include first encapsulation layers having different stack structures.

[0249] For example, the stacking structures of the first encapsulation layer TFEL1-1 of the first light-emitting area EA1 and the second light-emitting area EA2 are identical to each other and are different from the stacking structure of the first encapsulation layer TFEL1-2 of the third light-emitting area EA3. The first light-emitting area EA1 may include a capping layer CPL, a first encapsulation layer TFEL1-1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the first light-emitting element ED1. The first encapsulation layer TFEL1-1 may include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the first optical layer 110, the second optical layer 111, the moisture barrier layer 120, and the upper layer 140 Fig. 9 Description.

[0250] The second light-emitting area EA2 may include a capping layer CPL, a first encapsulation layer TFEL1-1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the second light-emitting element ED2. The first encapsulation layer TFEL1-1 of the second light-emitting area EA2 has the same stacking structure as the first encapsulation layer TFEL1-1 of the first light-emitting area EA1. The third light-emitting area EA3 may include a capping layer CPL, a first encapsulation layer TFEL1-2, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the third light-emitting element ED3. The first encapsulation layer TFEL1-2 of the third light-emitting area EA3 may include a first optical layer 110, a second optical layer 111, and a moisture barrier layer 120 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the first optical layer 110, the second optical layer 111, and the moisture barrier layer 120 Fig.10 Description.

[0251] refer to Fig.15 , the display device 10 according to some embodiments includes a first light emitting area EA1, a second light emitting area EA2, and a third light emitting area EA3.

[0252] The first light emitting area EA1 includes a first light emitting element ED1 that emits light of a first wavelength. The central wavelength band of the first light emitting element ED1 has a range of 600nm to 680nm. The second light emitting area EA2 includes a second light emitting element ED2 that emits light of a second wavelength. The central wavelength band of the second light emitting element ED2 has a range of 500nm to 580nm. The third light emitting area EA3 includes a third light emitting element ED3 that emits light of a third wavelength. The central wavelength band of the third light emitting element ED3 has a range of 420nm to 480nm.

[0253] The light emitting areas EA1, EA2, and EA3 emitting light of different wavelengths may include first encapsulation layers having different stack structures.

[0254] For example, the stacking structures of the first encapsulation layers TFEL1-3 of the first light-emitting area EA1 and the second light-emitting area EA2 are identical to each other and are different from the stacking structure of the first encapsulation layer TFEL1-1 of the third light-emitting area EA3. The first light-emitting area EA1 may include a capping layer CPL, a first encapsulation layer TFEL1-3, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the first light-emitting element ED1. The first encapsulation layer TFEL1-3 may include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, a buffer layer 131, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the first optical layer 110, the second optical layer 111, the moisture barrier layer 120, the buffer layer 131, and the upper layer 140 Fig.11 Description. The second light-emitting area EA2 includes a capping layer CPL, a first encapsulation layer TFEL1-3, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the second light-emitting element ED2. The first encapsulation layer TFEL1-3 of the second light-emitting area EA2 has the same stacking structure as the first encapsulation layer TFEL1-3 of the first light-emitting area EA1. The third light-emitting area EA3 may include a capping layer CPL, a first encapsulation layer TFEL1-1, a second encapsulation layer TFEL2, and a third encapsulation layer TFEL3 sequentially arranged on the third light-emitting element ED3. The first encapsulation layer TFEL1-1 of the third light-emitting area EA3 may include a first optical layer 110, a second optical layer 111, a moisture barrier layer 120, and an upper layer 140 sequentially arranged on the capping layer CPL. The refractive index and thickness reference of the first optical layer 110, the second optical layer 111, the moisture barrier layer 120, and the upper layer 140 Fig. 9 Description.

[0255] As described above, the touch sensitivity may be improved by reducing the dielectric constant and the thickness of the second encapsulation layer TFEL2 .

[0256] In addition, the light efficiency of each light emitting area, the luminous efficiency of each light emitting area, and the viewing angle characteristics can be controlled as needed by differentiating the stacked structure of the encapsulation layer between light emitting areas emitting light of different wavelengths.

[0257] However, the aspects of the embodiments according to the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the embodiments according to the present disclosure will become more apparent to those skilled in the art by referring to the claims (equivalents thereof included therein).

Claims

1. A display device, include: A display layer, comprising a display area and a non-display area surrounding the display area; a touch sensor layer overlapping the display area of ​​the display device; as well as a light conversion layer on the touch sensor layer and overlapping the display area of ​​the display device, Wherein, the display device comprises: a first light emitting element in the first light emitting region and configured to emit light of a first wavelength; a second light emitting element in the second light emitting region and configured to emit light of a second wavelength; A capping layer, on the first light emitting element and the second light emitting element; 1-1 encapsulation layer, on the capping layer at the first light emitting region and comprising a plurality of inorganic insulating layers; 1-2 encapsulation layer, on the capping layer at the second light emitting region and comprising a plurality of inorganic insulating layers; and The second encapsulation layer and the third encapsulation layer are sequentially on the 1-1 encapsulation layer and the 1-2 encapsulation layer, wherein the thickness and refractive index of the plurality of inorganic insulating layers of the 1-2 encapsulation layer are different from the thickness and refractive index of the plurality of inorganic insulating layers of the 1-1 encapsulation layer, and Wherein, the dielectric constant of the second encapsulation layer is in the range of 2.0 to 3.

0.

2. The display device according to claim 1, in, The second encapsulation layer has a thickness in the range of 8 μm to 9 μm or 10 μm to 11 μm.

3. The display device according to claim 1, in, The 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer and an upper layer, and Wherein, the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer.

4. The display device according to claim 3, in, The optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer comprise silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and The upper layer includes silicon oxynitride having an oxygen content higher than that of the optical layer, the first optical layer, the auxiliary layer, and the second moisture barrier layer.

5. The display device according to claim 4, in, The optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index in the range of 1.50 to 1.80, and the refractive index of the auxiliary layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, The second moisture barrier layer has a refractive index in a range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, and The upper layer has a refractive index in the range of 1.50 to 1.69, and the refractive index of the upper layer is smaller than the refractive index of the auxiliary layer and the refractive index of the second moisture barrier layer.

6. The display device according to claim 5, in, The optical layer, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, Wherein, the first moisture barrier layer and the second moisture barrier layer have to The thickness is within the range of Wherein, the auxiliary layer and the upper layer have to The thickness is within the range of , and the upper layer is thicker than the auxiliary layer.

7. The display device according to claim 6, in, The optical layer has The thickness of the first moisture barrier layer is The auxiliary layer has a thickness of The thickness of the upper layer is of the thickness, and Wherein, the first optical layer has The thickness of the second optical layer is The thickness of the second moisture barrier layer is The thickness of.

8. The display device according to claim 1, in, The 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer and an upper layer, and Wherein, the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer and a second moisture barrier layer.

9. The display device according to claim 8, in, The optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer comprise silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and The upper layer includes silicon oxynitride having an oxygen content higher than that of the optical layer, the first optical layer, the auxiliary layer, and the second moisture barrier layer.

10. The display device according to claim 9, in, The optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index in the range of 1.50 to 1.80, and the refractive index of the auxiliary layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, The second moisture barrier layer has a refractive index in a range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, and The upper layer has a refractive index in the range of 1.50 to 1.69, and the refractive index of the upper layer is smaller than the refractive index of the auxiliary layer and the refractive index of the second moisture barrier layer.

11. The display device according to claim 10, in, The optical layer, the first optical layer and the second optical layer have to The thickness within the range of Wherein, the first moisture barrier layer and the second moisture barrier layer have to The thickness is within the range of Wherein, the auxiliary layer and the upper layer have to The thickness is within the range of , and the upper layer is thicker than the auxiliary layer.

12. The display device according to claim 11, in, The optical layer has The thickness of the first moisture barrier layer is The auxiliary layer has a thickness of The thickness of the upper layer is of the thickness, and Wherein, the first optical layer has The thickness of the second optical layer is The thickness of the second moisture barrier layer is The thickness of.

13. The display device according to claim 1, in, The 1-1 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer, wherein the 1-2 encapsulation layer sequentially comprises a first optical layer, a second optical layer and a second moisture barrier layer, and Wherein, the second encapsulation layer is directly on the second moisture barrier layer of the 1-2 encapsulation layer.

14. The display device according to claim 13, in, The first optical layer comprises silicon oxynitride, wherein the second optical layer comprises silicon nitride, wherein the second moisture barrier layer comprises silicon oxynitride, and Wherein, the upper layer includes silicon oxynitride having an oxygen content higher than that of the second moisture barrier layer.

15. The display device according to claim 14, in, The first optical layer has a refractive index in the range of 1.20 to 1.62, wherein the second optical layer has a refractive index in the range of 1.70 to 1.90, wherein the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the first optical layer, and The upper layer has a refractive index in the range of 1.50 to 1.69, and the refractive index of the upper layer is less than the refractive index of the second moisture barrier layer.

16. The display device according to claim 15, in, The first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, Wherein, the second moisture barrier layer has to The thickness is within the range of Wherein, the upper layer has to The thickness is within the range of .

17. The display device according to claim 16, in, The first optical layer has The thickness of the second optical layer is The thickness of the second moisture barrier layer is The thickness of the upper layer is The thickness of.

18. The display device according to claim 1, in, The 1-1 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer, a buffer layer and an upper layer, and Wherein, the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer.

19. The display device according to claim 18, in, The first optical layer comprises silicon oxynitride, wherein the second optical layer comprises silicon nitride, wherein the second moisture barrier layer and the buffer layer include silicon oxynitride, and The upper layer includes silicon oxynitride having an oxygen content higher than that of the second moisture barrier layer and the buffer layer.

20. The display device according to claim 19, in, The first optical layer has a refractive index in the range of 1.20 to 1.62, wherein the second optical layer has a refractive index in the range of 1.70 to 1.90, wherein the second moisture barrier layer has a refractive index in the range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the first optical layer, wherein the upper layer has a refractive index in the range of 1.50 to 1.69, and The buffer layer has a refractive index smaller than that of the second moisture barrier layer and larger than that of the upper layer.

21. The display device according to claim 20, in, The first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, Wherein, the second moisture barrier layer has to The thickness is within the range of Wherein, the buffer layer and the upper layer have to The thickness is within the range of .

22. The display device according to claim 21, in, The first optical layer has The thickness of the second optical layer is The thickness of the second moisture barrier layer is The thickness of the buffer layer is The thickness of the upper layer is The thickness of.

23. The display device according to claim 21, in, The capping layer has a refractive index greater than the refractive index of the first optical layer.

24. A display device, include: a first light emitting element in the first light emitting region and configured to emit light of a first wavelength; a second light emitting element in the second light emitting region and configured to emit light of a second wavelength; A capping layer, on the first light emitting element and the second light emitting element; 1-1 encapsulation layer, on the capping layer of the first light-emitting region and comprising a plurality of inorganic insulating layers; 1-2 encapsulation layer, on the capping layer of the second light emitting region and comprising a plurality of inorganic insulating layers; as well as The second encapsulation layer and the third encapsulation layer are sequentially on the 1-1 encapsulation layer and the 1-2 encapsulation layer, The thickness and refractive index of the multiple inorganic insulating layers of the 1-2 encapsulation layer are different from the thickness and refractive index of the multiple inorganic insulating layers of the 1-1 encapsulation layer.

25. The display device according to claim 24, in, The dielectric constant of the second encapsulation layer is in the range of 2.0 to 3.0, and Wherein, the thickness of the second encapsulation layer is in the range of 8 μm to 9 μm or 10 μm to 11 μm.

26. The display device according to claim 24, in, The 1-1 encapsulation layer sequentially includes an optical layer, a first moisture barrier layer, an auxiliary layer and an upper layer, and Wherein, the 1-2 encapsulation layer sequentially includes a first optical layer, a second optical layer, a second moisture barrier layer and an upper layer.

27. The display device according to claim 26, in, The optical layer and the first optical layer include silicon oxynitride, wherein the first moisture barrier layer and the second optical layer comprise silicon nitride, wherein the auxiliary layer and the second moisture barrier layer include silicon oxynitride, and The upper layer includes silicon oxynitride having an oxygen content higher than that of the auxiliary layer and the second moisture barrier layer.

28. The display device according to claim 27, in, The optical layer and the first optical layer have a refractive index in the range of 1.20 to 1.62, wherein the first moisture barrier layer and the second optical layer have a refractive index in the range of 1.70 to 1.90, wherein the auxiliary layer has a refractive index in the range of 1.50 to 1.80, and the refractive index of the auxiliary layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, The second moisture barrier layer has a refractive index in a range of 1.50 to 1.70, and the refractive index of the second moisture barrier layer is greater than the refractive index of the optical layer and the refractive index of the first optical layer, and The upper layer has a refractive index in the range of 1.50 to 1.69, and the refractive index of the upper layer is less than the refractive index of the second moisture barrier layer.

29. The display device according to claim 28, in, The optical layer, the first optical layer and the second optical layer have to The second optical layer is thicker than the first optical layer, Wherein, the first moisture barrier layer and the second moisture barrier layer have to The thickness is within the range of Wherein, the auxiliary layer and the upper layer have to The thickness is within the range of , and the upper layer is thicker than the auxiliary layer.

30. The display device according to claim 29, in, The optical layer has The thickness of the first moisture barrier layer is The auxiliary layer has a thickness of The thickness of the upper layer is of the thickness, and Wherein, the first optical layer has The thickness of the second optical layer is The thickness of the second moisture barrier layer is The thickness of.

31. The display device according to claim 24, further comprising a light conversion layer on the third encapsulation layer, in, The light conversion layer is one of a color filter and a polarizing film.

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