CVD (Chemical Vapor Deposition) high-nitrogen monocrystal diamond for quantum application research as well as growth method and application of CVD high-nitrogen monocrystal diamond

Abstract

The invention belongs to the technical field of nitrogen-doped diamond manufacturing, and particularly relates to a CVD (chemical vapor deposition) high-nitrogen single crystal diamond for quantum application research and a growth method and application of the CVD high-nitrogen single crystal diamond. According to the method, a conventional low-nitrogen CVD diamond single crystal wafer serves as a seed crystal, homogeneous epitaxial growth is conducted through a CVD method, low-speed growth of single crystals is achieved under the high-nitrogen condition by controlling the growth temperature, the growth pressure and the adding concentration of CH4, and the single crystal diamond with the expected nitrogen content is obtained under the condition that the crystal quality is guaranteed. According to the method, production of a high-nitrogen monocrystal diamond product with specific requirements on the actual nitrogen content is achieved, the requirements of customers on the actual nitrogen content are met, meanwhile, flexible adjustment can be conducted according to production of monocrystal with different nitrogen contents, and compared with high-temperature and high-pressure yellow monocrystal, the growth size of CVD high-nitrogen monocrystal diamond is further increased; the product can be applied to quantum research and the like, and has relatively high development prospect and research value.

Description

Technical Field

[0001] The invention belongs to the technical field of nitrogen-doped diamond manufacturing, and in particular relates to a CVD high-nitrogen single crystal diamond for quantum application research and a growth method and application thereof. Background Art

[0002] Quantum materials usually show some strange properties under extremely low temperature conditions, such as superconductivity. These phenomena only occur under low temperature conditions. If some materials can be found that can show superconductivity even without low temperature conditions, it will bring revolutionary changes. Diamonds containing crystal defects have become the "focus of attention" of quantum researchers around the world.

[0003] NV color centers are luminescent point defects in diamond, where a nitrogen atom replaces a carbon atom in the diamond and there is a hole in the adjacent position. Color centers get their name because of their optical properties. While diamond itself is transparent to visible light, color centers are spots in it that absorb and efficiently re-emit light in a fairly narrow spectral band (i.e., with a very specific wavelength). Importantly, color centers can efficiently emit single photons, which are the cornerstone of quantum optics and quantum information applications, such as quantum encryption, the ultimate data security technology. In addition, the robustness and readability of the spin states of NV defects also make diamond a very promising platform for quantum technologies, such as quantum secure communications, quantum computing, quantum imaging, and quantum sensing.

[0004] The traditional HPHT method has strict requirements on equipment, and usually uses catalysts such as iron and nickel for synthesis. The prepared type Ib diamond has many defects, small size and high cost. When used for quantum detection research, there are problems such as short spin time, high stress, and uncontrollable nitrogen content, which cannot meet application requirements. Microwave plasma chemical vapor deposition (MPCVD) is recognized as the most suitable CVD method for single crystal diamond growth. It has the advantages of no pollution, high plasma density and stable temperature field. The nitrogen content can be adjusted by controlling the addition ratio of nitrogen gas, which is controllable. Compared with HPHT diamond, CVD high nitrogen diamond has a longer spin time and is more suitable for quantum detection research.

[0005] For example, the Chinese invention patent with publication number CN104185697A applied by UK Element Six Technology Co., Ltd. discloses a single crystal CVD synthetic diamond material, which includes a total generated nitrogen concentration greater than or equal to 5ppm and uniformly distributed defects, wherein the uniformly distributed defects are measured by measuring the total nitrogen concentration, generated nitrogen vacancy defect (NV) concentration, Raman intensity change, single atomic substitutional nitrogen defect (N s) concentration or color intensity change trend. The patent also provides a method for manufacturing a single crystal CVD synthetic diamond material, the method comprising forming a CVD synthesis atmosphere comprising hydrogen, a carbon source gas, a nitrogen source gas and an optional oxygen source gas, wherein the CVD synthesis atmosphere comprises nitrogen in an atomic concentration range of 0.1% to 3% relative to the total gas components; growing a single crystal CVD diamond material on a single crystal diamond substrate mounted on a support substrate; and controlling the temperature of the support substrate so that the temperature variation at any given point on the support substrate during the growth process is less than a target temperature value of 50°C, the temperature variation during the entire growth cycle is less than a target temperature value of 50°C, and the target temperature value is within a range of 1000°C to 1400°C, wherein the CVD synthesis atmosphere comprises at least one of the following: carbon in an atomic concentration range of 0.1% to 2.0% relative to the total gas components; and oxygen in an atomic concentration range of 5% to 40% relative to the total gas components. The purpose of the embodiments of the patent is to provide a CVD diamond synthesis process that is capable of forming a CVD synthetic diamond material with high and uniformly distributed nitrogen defects. Certain embodiments are directed to providing a CVD synthetic diamond material having a high and uniform distribution of single atomic substitutional nitrogen defects. Alternatively or additionally, certain embodiments are directed to providing a CVD synthetic diamond material having a high and uniform distribution of nitrogen vacancy defects. Alternatively or additionally, certain embodiments are directed to providing a CVD synthetic diamond material having substantially no visible striations in a photoluminescent state (e.g. using DiamondView imaging technology).

[0006] Currently, only a few foreign companies such as Element Six Technology Co., Ltd. have mastered the technology of preparing high-nitrogen diamond using the CVD method. Their products have long-term sales restrictions in China and are expensive. Domestic research on this technology is still not in-depth, and product performance is extremely unstable and still needs to be further improved.

[0007] Conventional CVD growth has a moderate amount of added N2. When the N2 content exceeds a certain value, it will cause excessive growth of the single crystal, resulting in surface polycrystalline and depression problems, which seriously affect the quality and yield of the single crystal. In addition, the increase in nitrogen content can easily cause the growth rate to be too fast, the color of the single crystal to be too dark, and the internal stress of the single crystal to be large, which is not conducive to applied research. To this end, the inventor adjusted the CH4 content and gas pressure, and strictly controlled the growth temperature range. By controlling the growth rate, the crystallization quality and yield of the single crystal under high nitrogen conditions were improved, and finally the preparation of CVD high nitrogen single crystal diamond that meets the nitrogen content requirements was achieved. Summary of the invention

[0008] In view of the shortcomings of the prior art, the present invention provides a method for obtaining single crystal diamond with expected nitrogen content while ensuring the crystal quality by using a low-nitrogen CVD diamond single crystal crystal as a seed crystal, adopting the CVD method for homoepitaxial growth, and controlling the growth temperature, pressure and CH4 addition concentration to enable the single crystal to grow at a low speed under high nitrogen conditions. CVD high-nitrogen single crystal diamond is obtained by this method.

[0009] The invention also provides application of the CVD high-nitrogen single crystal diamond in quantum application research.

[0010] To achieve the above object, the present invention adopts the following technical solutions: The present invention provides a CVD high-nitrogen single crystal diamond growth method for quantum application research, comprising the following steps: (1) Seed crystal pretreatment: selecting a conventional CVD diamond single crystal wafer as a seed crystal and cleaning the seed crystal; (2) Single wafer growth using MPCVD equipment: a. Place the seed crystal cleaned in step (1) on the MPCVD equipment growth platform and evacuate to 1×10 -2 mbar or less, introduce H2, N2, and CO2 at the same time, and set the microwave power to 3.5-4kw, the gas pressure to 110-130mbar, and the temperature to 750-850℃, and maintain for 30-40min; b. Adjust the microwave power to 4-4.5kw and the air pressure to 120-140mbar. As the microwave power and air pressure increase, the temperature gradually rises. Introduce CH4 to maintain the temperature at 920-950℃ for growth. As the growth time increases, adjust the air pressure to 110-130mbar to maintain a stable temperature. Stable growth lasts for 100±20h. c. Before the end of growth, stop introducing CH4 and CO2, continue to introduce H2 and N2, adjust the microwave power to 4.3-5kw, the gas pressure to 140-160mbar, the temperature to 1000-1050℃, maintain for 50-60min, and then stop.

[0011] Furthermore, the crystallographic orientation of the seed crystal in step (1) is (100), and the conventional CVD diamond single crystal comprises a low nitrogen CVD diamond single crystal with an actual nitrogen content of less than 1 ppm prepared by conventional process. The size of the conventional CVD diamond single crystal is 7 mm×7 mm×0.3 mm.

[0012] Furthermore, the cleaning process in step (1) includes placing the seed crystal in an organic solvent for ultrasonic cleaning for 3±1 min; the organic solvent includes anhydrous ethanol.

[0013] Furthermore, the flow rate of H2 in step (2) is 400-500 sccm.

[0014] Furthermore, the flow rate of CO2 in step (2) includes 2-4 sccm.

[0015] Furthermore, the concentration of N2 in step (2) is 400-500 ppm. The concentration of N2 in the present invention is 10-15 times the concentration of N2 during conventional growth.

[0016] Furthermore, the flow rate of CH4 in step (2) comprises 12-15 sccm, which is approximately 3% of the flow rate of H2.

[0017] The flow rate of CH4 introduced in step (2) accounts for about 50% of the flow rate of CH4 during conventional growth. The purpose is to reduce the growth rate to a certain extent by controlling the addition concentration of carbon-containing groups while ensuring a certain yield rate. At the same time, the growth pressure is also much lower than the pressure during conventional growth, the purpose is to further suppress the growth rate. Since most of the reaction gas is discharged with the exhaust gas during the growth process, the nitrogen content actually absorbed by the single crystal is much lower than the addition ratio of N2. The growth is maintained in a narrow temperature range of 920~950℃, the purpose is to fully dope the single crystal with nitrogen at a higher temperature. The actual nitrogen content of the single crystal prepared under this condition accounts for about 1 / 15 of the addition ratio of N2, and the stable growth time is 100±20h.

[0018] Before the end of growth, stop introducing CH4 and CO2, and continue to introduce H2 and N2, and maintain it at 1000-1050℃ for 50-60min. The purpose is to continue etching the single crystal in a high nitrogen atmosphere under high temperature conditions, which is beneficial to prevent excessive nitrogen absorption on the surface and affect the actual nitrogen content of the single crystal. It is also beneficial to reduce the internal stress of the single crystal and improve the performance of the single crystal.

[0019] The single crystal prepared in step (2) was tested and found to have a growth rate of 8-15 μm / h, which greatly inhibited the effect of high nitrogen conditions on the growth rate.

[0020] Furthermore, the purity of H2 described in step (2) is >99.999%, the purity of CH4 is >99.995%, the purity of N2 is >99.99%, and the purity of CO2 is >99.99%.

[0021] The present invention also provides a CVD high-nitrogen single crystal diamond prepared by the above growth method for use in quantum application research.

[0022] The present invention further provides an application of CVD high-nitrogen single crystal diamond in quantum application research.

[0023] The beneficial effects of the present invention are: 1. The present invention provides a CVD high-nitrogen single crystal diamond growth method for quantum application research. Under the premise of ensuring the crystallization quality of the single crystal, by controlling the CH4 addition ratio and gas pressure in a high nitrogen atmosphere, and defining an optimal growth temperature range, the CVD high-nitrogen single crystal diamond is grown at a lower speed, so that the actual nitrogen content of the single crystal and the added N2 concentration form a certain controllable ratio, which is conducive to the flexible adjustment of the growth method for single crystals with different nitrogen content requirements.

[0024] 2. The CVD high-nitrogen single-crystal diamond growth method for quantum application research provided by the present invention solves the problem of low yield of single crystal growth under high-nitrogen conditions, the single crystal performance is guaranteed, the application research effect is good, and it has high development prospects and economic value. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solution of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Attached Figure 1 This is a picture of CVD high nitrogen single crystal diamond grown by the method of Example 1; Attached Figure 2 This is a polished CVD high nitrogen single crystal diamond image prepared by the method of Example 1, with a size of about 5 mm×5 mm×3 mm; Attached Figure 3 It is a common crack defect in the preparation process of CVD high nitrogen single crystal diamond; Attached Figure 4 These are pictures of CVD single crystal diamonds with different nitrogen contents after polishing prepared in Examples 1-3; Attached Figure 5 The test results of the actual nitrogen content of CVD high nitrogen single crystal diamond with different nitrogen contents obtained by the growth method provided by the present invention; Attached Figure 6 This is the result of integrating the CVD high-nitrogen single-crystal diamond sample provided by the present invention into a magnetic detection system to perform magnetic field measurement sensitivity detection. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. The embodiments mentioned are all implemented on the premise of the technical solutions of the present invention, and detailed implementation processes are given, but it should be stated that the protection scope of the present invention is not limited to the following embodiments.

[0028] The MPCVD equipment used in the specific implementation of the present invention is the German CYRANNUS system, and the operating parameters are 2.45GHz-6kw.

[0029] Example 1 A CVD high nitrogen single crystal diamond growth method for quantum application research specifically comprises the following steps: (1) Preprocessing: A CVD diamond single crystal with a crystallographic orientation of (100), a size of 7 mm × 7 mm × 0.3 mm, and an actual nitrogen content of less than 1 ppm prepared by a conventional process was used as a seed crystal and ultrasonically cleaned in anhydrous ethanol for 3 min; (2) Single crystal growth: a. Turn on the MPCVD equipment, clean the seed crystal in step (1) and place it on the sample stage of the reaction chamber, and evacuate the vacuum to 1×10 -2 mbar, and then introduce H2, N2, and CO2 at the same time, where the flow rates of H2 and CO2 are 450sccm and 3sccm respectively, the concentration of N2 is 450ppm, and the microwave power is set to 3.8kw, the gas pressure is 120mbar, and the temperature is 800℃, and maintained for 40min; b. Adjust the microwave power to 4.3kw and the gas pressure to 130mbar. As the microwave power and gas pressure increase, the temperature gradually rises. CH4 is introduced with a flow rate of 13.5sccm, which accounts for about 3% of the H2 flow rate. The temperature is maintained at 935℃ for growth. The CH4 flow rate is about 50% of the CH4 flow rate during conventional growth. The purpose is to reduce the growth rate to a certain extent by controlling the addition concentration of carbon-containing groups while ensuring stable growth. At the same time, the growth pressure is also much lower than the pressure during conventional growth, with the purpose of further inhibiting the growth rate. Since most of the reaction gas is discharged with the exhaust gas during the growth process, the actual nitrogen content absorbed by the single crystal is much lower than the addition ratio of N2. The temperature is maintained at 935℃ for growth, with the purpose of fully doping the single crystal with nitrogen at a higher temperature. The actual nitrogen content of the single crystal prepared under this condition is about 1 / 15 of the addition ratio of N2, and the stable growth time is 100h. As the growth time increases, the gas pressure is gradually reduced to 120mbar to keep the temperature stable; c. Before the end of growth, stop introducing CH4 and CO2, continue to introduce H2 and N2, adjust the microwave power to 4.8 kW, the gas pressure to 150 mbar, and the temperature to 1030°C, and maintain for 60 minutes. The purpose is to continue etching the single crystal in a high nitrogen atmosphere under high temperature conditions, which is beneficial to prevent excessive nitrogen absorption on the surface layer from affecting the actual nitrogen content of the single crystal, and at the same time help reduce the internal stress of the single crystal and improve the performance of the single crystal.

[0030] The single crystal prepared in step (2) was tested and found to have a growth rate of about 10-12 μm / h.

[0031] The purity of H2 described in step (2) is greater than 99.999%, the purity of CH4 is greater than 99.995%, and the purity of N2 and CO2 is greater than 99.99%.

[0032] The method of this embodiment determines the actual nitrogen doping amount of the single crystal by making the single crystal grow at a low speed under high nitrogen conditions, identifying the appropriate temperature range, and then determining the actual nitrogen content of the single crystal. Under the premise of ensuring the crystallization quality and yield rate, the actual nitrogen content requirement can be flexibly adjusted, and the ratio of the actual nitrogen content to the added N2 can form a fixed ratio.

[0033] The CVD high nitrogen single crystal diamond obtained after growth is as follows Figure 1 As shown in the figure, the CVD high nitrogen single crystal diamond obtained after polishing is as follows Figure 2 As shown, the measuring dimensions are approximately 5mm×5mm×3mm.

[0034] from Figure 1 It can be seen that the color of the CVD single crystal diamond is golden yellow, which is similar to the appearance of HPHT yellow single crystal, with good surface quality, no visible impurity defects, light edge polycrystalization and less polycrystal lateral extension, and no edge cracks. Figure 2 It can be seen that the high nitrogen CVD diamond single crystal with a size of about 5mm×5mm×3mm obtained after laser cutting and surface polishing is golden yellow as a whole, and the color is uniform, indicating that the nitrogen atoms are evenly distributed, which is consistent with Figure 3 Compared with the common crack defects in Figure 2 The single crystal diamond does not produce processing defects after laser cutting and surface polishing, which shows that the internal stress of the single crystal diamond is reduced and the crystal quality is significantly improved, indicating that the growth method of this embodiment is feasible.

[0035] Example 2 A CVD high nitrogen single crystal diamond growth method for quantum application research specifically comprises the following steps: (1) Preprocessing: A CVD diamond single crystal with a crystallographic orientation of (100), a size of 7 mm × 7 mm × 0.3 mm, and an actual nitrogen content of less than 1 ppm prepared by a conventional process was used as a seed crystal and ultrasonically cleaned in anhydrous ethanol for 3 min; (2) Single crystal growth: a. Turn on the MPCVD equipment, clean the seed crystal in step (1) and place it on the sample stage of the reaction chamber, and evacuate the vacuum to 1×10 -2mbar, then introduce H2, N2, and CO2 simultaneously, where the flow rates of H2 and CO2 are 400sccm and 3sccm respectively, the concentration of N2 is 450ppm, and the microwave power is set to 4kw, the pressure is 125mbar, and the temperature is 820℃, and maintained for 40min; b. Adjust the microwave power to 4.5kw and the gas pressure to 135mbar. As the microwave power and gas pressure increase, the temperature gradually rises. CH4 is introduced at a flow rate of 12sccm, which accounts for about 3% of the H2 flow rate. The temperature is maintained at 970℃ for growth, and the stable growth time is 100h. As the growth time increases, the gas pressure is gradually reduced to 125mbar to keep the temperature stable. c. Before the end of growth, stop introducing CH4 and CO2, continue to introduce H2 and N2, adjust the microwave power to 5 kW, the gas pressure to 155 mbar, and the temperature to 1050°C, and maintain for 60 min.

[0036] The single crystal prepared in step (2) was tested and found to have a growth rate of about 12-15 μm / h.

[0037] The purity of H2 described in step (2) is greater than 99.999%, the purity of CH4 is greater than 99.995%, and the purity of N2 and CO2 is greater than 99.99%.

[0038] The CVD high-nitrogen single crystal diamond prepared by the method of this embodiment has an increased growth temperature, which increases the diffusion capacity of nitrogen atoms and reduces the actual doping ratio.

[0039] Example 3 A CVD high nitrogen single crystal diamond growth method for quantum application research specifically comprises the following steps: (1) Preprocessing: A CVD diamond single crystal with a crystallographic orientation of (100), a size of 7 mm × 7 mm × 0.3 mm, and an actual nitrogen content of less than 1 ppm prepared by a conventional process was used as a seed crystal and ultrasonically cleaned in anhydrous ethanol for 3 min; (2) Single crystal growth: a. Turn on the MPCVD equipment, clean the seed crystal in step (1) and place it on the sample stage of the reaction chamber, and evacuate the vacuum to 1×10 -2 mbar, and then introduce H2, N2, and CO2 at the same time, where the flow rates of H2 and CO2 are 500sccm and 3sccm respectively, the concentration of N2 is 450ppm, and the microwave power is set to 3.6kw, the gas pressure is 115mbar, and the temperature is 780℃, and maintained for 40min; b. Adjust the microwave power to 4.1kw and the gas pressure to 125mbar. As the microwave power and gas pressure increase, the temperature gradually rises. CH4 is introduced at a flow rate of 15sccm, which is about 3% of the H2 flow rate. The temperature is maintained at 900℃ for growth, and the stable growth time is 100h. As the growth time increases, the gas pressure is gradually reduced to 115mbar to keep the temperature stable. c. Before the end of growth, stop introducing CH4 and CO2, continue to introduce H2 and N2, adjust the microwave power to 4.6 kW, the gas pressure to 145 mbar, and the temperature to 1000°C, and maintain for 60 min.

[0040] The single crystal prepared in step (2) was tested and found to have a growth rate of about 8-10 μm / h.

[0041] The purity of H2 described in step (2) is greater than 99.999%, the purity of CH4 is greater than 99.995%, and the purity of N2 and CO2 is greater than 99.99%.

[0042] The CVD high-nitrogen single crystal diamond prepared by the method of this embodiment has a lower growth temperature, which causes the diffusion capacity of nitrogen atoms to decrease, and the actual doping ratio is significantly increased, showing an accumulation trend. The color of the prepared single crystal diamond is light brown-black.

[0043] The polished single crystal diamonds with different nitrogen contents obtained in Examples 1-3 are as follows: Figure 4 As shown in the figure, the actual nitrogen content of CVD single crystal diamond with different nitrogen contents is detected as follows Figure 5 shown.

[0044] from Figure 4 and Figure 5 It can be seen that when other growth conditions are basically the same, a higher growth temperature is conducive to promoting the diffusion of nitrogen atoms, so that the single crystal absorbs less nitrogen, the color is lighter, and the actual nitrogen content is lower; a lower growth temperature has limited diffusion capacity of nitrogen atoms, so the single crystal absorbs more nitrogen, the color is darker, and the actual nitrogen content is relatively high; when the growth temperature is moderate, the ratio of the actual nitrogen content of the single crystal to the added N2 can be close to the expected absorption ratio, and the results obtained through repeated tests are relatively consistent.

[0045] The CVD high nitrogen single crystal diamond provided by the present invention can be integrated into a magnetic detection system for use, and the magnetic detection system can realize magnetic field detection of scenes such as geomagnetic field, minerals, shipwrecks, electric currents, and mines. Figure 6 It can be seen that the present invention obtains a quantum diamond sample with a high NV color center concentration by preparing a high nitrogen content CVD single crystal diamond material. The sample is integrated into a magnetic detection system for testing, and the magnetic field measurement sensitivity reaches 4.3pT / Hz. 1 / 2, indicating that the material has the feasibility of being applied in the fields of high-precision magnetic field measurement, current measurement, etc., indicating that the CVD single crystal diamond with different nitrogen contents provided in the embodiments of the present invention can be widely used in the process of quantum application research.

[0046] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A CVD high nitrogen single crystal diamond growth method for quantum application research, It is characterized in that The steps include: (1) Seed crystal pretreatment: selecting a conventional CVD diamond single crystal wafer as a seed crystal and cleaning the seed crystal; (2) Single wafer growth using MPCVD equipment: a. Place the seed crystal cleaned in step (1) on the MPCVD equipment growth platform and evacuate to 1×10 -2 mbar or less, and H 2 、N 2 , CO 2 , and set the microwave power to 3.5-4kw, the air pressure to 110-130mbar, the temperature to 750-850℃, and maintain for 30-40min; b. Adjust the microwave power to 4-4.5 kW and the air pressure to 120-140 mbar, and introduce CH 4 , maintain the temperature at 920~950℃, adjust the gas pressure to 110-130mbar, and grow stably for 100±20h; c. Before the growth is finished, stop introducing CH 4 and CO 2 , continue to pass H 2 and N 2 , adjust the microwave power to 4.3-5kw, the air pressure to 140-160mbar, the temperature to 1000-1050℃, keep for 50-60min, stop, and you have it.

2. The growth method according to claim 1, It is characterized in that The crystallographic orientation of the seed crystal in step (1) is (100), and the conventional CVD diamond single crystal wafer includes a low-nitrogen CVD diamond single crystal wafer with an actual nitrogen content of less than 1 ppm prepared by conventional technology.

3. The growth method according to claim 1, It is characterized in that The cleaning process in step (1) includes placing the seed crystal in an organic solvent for ultrasonic cleaning for 3±1 min.

4. The growth method according to claim 1, It is characterized in that In step (2), H 2 The flow rate includes 400-500sccm.

5. The growth method according to claim 1, It is characterized in that In step (2), CO 2 The flow rate includes 2-4sccm.

6. The growth method according to claim 1, It is characterized in that In step (2), N 2 The concentration includes 400-500ppm.

7. The growth method according to claim 1, It is characterized in that In step (2), CH 4 The flow rate includes 12-15sccm.

8. The growth method according to claim 1, It is characterized in that H described in step (2) 2 The purity of CH 4 The purity is >99.995%, N 2 The purity of CO is >99.99%, 2 The purity is >99.99%.

9. CVD high nitrogen single crystal diamond for quantum application research prepared by the growth method according to any one of claims 1 to 8.

10. Use of the CVD high nitrogen single crystal diamond according to claim 9 in quantum application research.

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