Display panel and display device

Abstract

The application provides a display panel and a display device. The display panel comprises a light-emitting layer on a back plate and a light conversion layer stacked with the light-emitting layer. The light-emitting layer is provided with a plurality of light-emitting units. The light-emitting unit comprises a light-emitting area and a non-light-emitting area. The light conversion layer comprises a plurality of quantum dot filling structures respectively facing the light-emitting units. The plurality of light-emitting units have a target unit. The quantum dot filling structure facing the target unit is a target filling structure. The target filling structure comprises a first quantum dot filling structure facing the non-light-emitting area of the target unit and a second quantum dot filling structure facing the light-emitting area of the target unit. The number of quantum dots in the columnar structure corresponding to the unit area of the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of the second quantum dot filling structure. The more the number of quantum dots is, the higher the conversion efficiency of light is. The intensity of the converted light of the non-light-emitting area is enhanced, and the display uniformity of the display panel is improved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel and display device. Background Technology

[0002] Micro LED technology has gained attention in the display industry due to its advantages such as high contrast, low power consumption, long lifespan, wide color gamut, high dynamic range, and fast response. Quantum dots are light-emitting nanoscale materials that emit pure colors of light when excited by blue or ultraviolet Micro LEDs, achieving the requirements for full-color displays.

[0003] The full-color display technology combining Micro LED and quantum dots can not only reduce the number of mass transfers but also solve the problem of low luminous efficiency of red Micro LED chips. However, due to the uneven light emission of the LEDs themselves, the display panel after color conversion suffers from uneven display. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a display panel and display device that enhances the light conversion efficiency of the non-light-emitting area, increases the light intensity emitted from the non-light-emitting area, and improves the display uniformity of the display panel.

[0005] In a first aspect, this application provides a display panel, including:

[0006] The back panel has a light-emitting layer, in which multiple light-emitting units are provided, and each light-emitting unit includes a light-emitting area and a non-light-emitting area;

[0007] A light conversion layer is stacked with the light-emitting layer, the light conversion layer comprising quantum dot filling structures facing the plurality of light-emitting units respectively; among the plurality of light-emitting units there is a target unit, and the quantum dot filling structure facing the target unit serves as the target filling structure;

[0008] The target filling structure includes a first quantum dot filling structure facing the non-light-emitting region of the target unit and a second quantum dot filling structure facing the light-emitting region of the target unit. The number of quantum dots in the columnar structure corresponding to a unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to a unit area of ​​the second quantum dot filling structure. The unit area is parallel to the extension plane of the light conversion layer.

[0009] Optionally, the quantum dot concentration of the first quantum dot-filled structure is greater than the quantum dot concentration of the second quantum dot-filled structure.

[0010] Optionally, the second quantum dot filling structure includes a central structure and an edge structure, wherein the quantum dot concentration of the central structure is greater than the quantum dot concentration of the edge structure.

[0011] Optionally, the ratio of the quantum dot concentration of the first quantum dot-filled structure to the quantum dot concentration of the second quantum dot-filled structure is less than 2.

[0012] Optionally, the thickness of the first quantum dot-filled structure is greater than the thickness of the second quantum dot-filled structure.

[0013] Optionally, the second quantum dot filling structure includes a central structure and an edge structure, wherein the thickness of the central structure is greater than the thickness of the edge structure.

[0014] Optionally, the surfaces of the first quantum dot filling structure and the second quantum dot filling structure that are furthest from the light-emitting unit are flush, while the surfaces that face the light-emitting unit are stepped.

[0015] Optionally, the ratio of the thickness of the first quantum dot filled structure to the thickness of the second quantum dot filled structure is less than 2.

[0016] Optionally, the sum of the projected areas of the light-emitting and non-light-emitting areas of the target unit in a plane parallel to the extension plane of the light conversion layer is less than the sum of the projected areas of the first quantum dot filling structure and the second quantum dot filling structure in a plane parallel to the extension plane of the light conversion layer.

[0017] Optionally, the light-emitting unit includes a first semiconductor layer, a first electrode located in the non-light-emitting region and on a first side of the first semiconductor layer, a quantum well layer, a second semiconductor layer, and a second electrode located in the light-emitting region and on a first side of the first semiconductor layer. The first electrode is connected to the first semiconductor layer, the quantum well layer is connected to the first semiconductor layer, the second semiconductor layer is connected to the quantum well layer, and is also connected to the second electrode.

[0018] Optionally, the light conversion layer includes a quantum dot substrate having a groove away from the light-emitting layer, and the quantum dot filling structure is disposed in the groove.

[0019] Secondly, embodiments of this application also provide a display device, including the aforementioned display panel.

[0020] This application provides a display panel and a display device. The display panel includes a light-emitting layer on a back panel and a light conversion layer stacked on top of the light-emitting layer. The light-emitting layer has multiple light-emitting units, each including a light-emitting area and a non-light-emitting area. The light conversion layer includes quantum dot filling structures facing each of the multiple light-emitting units. Among the multiple light-emitting units is a target unit. The quantum dot filling structure facing the target unit serves as the target filling structure. The target filling structure includes a first quantum dot filling structure facing the non-light-emitting area of ​​the target unit and a second quantum dot filling structure facing the light-emitting area of ​​the target unit. The unit area of ​​the first quantum dot filling structure corresponds to... The number of quantum dots in the columnar structure is greater than the number of quantum dots in the columnar structure per unit area corresponding to the second quantum dot filling structure. The aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the light conversion efficiency. In other words, the light intensity of the non-light-emitting area is weaker than that of the light-emitting area. By setting up the light conversion layer, the light from the non-light-emitting area passes through more quantum dots to achieve higher efficiency light conversion. The intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity between the non-light-emitting area and the light-emitting area, improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0023] Figure 2 This is a schematic diagram of the structure of a light-emitting unit provided in an embodiment of this application;

[0024] Figure 3 This is a top view schematic diagram of a display panel provided in an embodiment of this application;

[0025] Figure 4 This is a schematic diagram of another display panel structure provided in an embodiment of this application;

[0026] Figure 5 A top view schematic diagram of another display panel provided in an embodiment of this application;

[0027] Figure 6 This is a schematic diagram of another display panel provided in an embodiment of this application;

[0028] Figure 7 This is a schematic diagram of the structure of another display panel provided in an embodiment of this application;

[0029] Figure 8 This is a schematic diagram of the structure of a display device provided in an embodiment of this application. Detailed Implementation

[0030] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0031] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0032] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0033] To better understand the technical solution and effects of this application, the specific embodiments will be described in detail below with reference to the accompanying drawings.

[0034] refer to Figure 1 The diagram shown is a structural diagram of a display panel provided in an embodiment of this application. The display panel includes a light-emitting layer on a back panel 100 and a light conversion layer stacked with the light-emitting layer.

[0035] The backplane 100 can be a driving backplane, which can be equipped with a driving circuit. Multiple light-emitting units 11 / 12 / 13 are disposed in the light-emitting layer on the backplane 100. The driving circuit can be connected to the electrodes of the light-emitting units to provide control signals to the light-emitting units. Specifically, the light-emitting unit 11 can be connected to the driving circuit through contact electrodes 101 / 102 on the backplane 100. The light-emitting units can emit blue light or ultraviolet light, and the light-emitting units can be Micro-LEDs, that is, blue LEDs or ultraviolet LEDs.

[0036] The light-emitting unit may include a light-emitting region and a non-light-emitting region. The light-emitting region is provided with a light-emitting core layer for emitting light. The light-emitting core layer may be a quantum well layer, where electrons and holes can aggregate to emit light. One side of the light-emitting core layer can be connected to a first electrode through a first semiconductor layer, and the other side can be connected to a second electrode through a second semiconductor layer. The first electrode and the second electrode may be located on the same side of the light-emitting unit so that the light-emitting unit can be electrically connected to the backplane through the first electrode and the second electrode.

[0037] refer to Figure 2 The diagram shown is a structural schematic of a light-emitting unit provided in an embodiment of this application. Taking light-emitting unit 11 as an example, the light-emitting unit includes a first electrode 111 and a second electrode 115, which are respectively connected to contact electrodes 101 / 102. The direction of the line connecting the center points of the first electrode 111 and the second electrode 115 of the light-emitting unit is denoted as the first direction. The light-emitting area of ​​the light-emitting unit (i.e., the light-emitting region...) Figure 2 The right-hand portion of the light-emitting unit (W6) has a dimension of W6 in the first direction. The non-light-emitting area of ​​the light-emitting unit (i.e., Figure 2 The left part of the light-emitting unit is denoted as W7 in the first direction, and the total size of the light-emitting unit is denoted as W8 = W6 + W7.

[0038] The light-emitting unit may include a first semiconductor layer 112, a first electrode 111 located in the non-light-emitting region and on the first side of the first semiconductor layer 112, and a quantum well layer 113, a second semiconductor layer 114, and a second electrode 115 located in the light-emitting region and on the first side of the first semiconductor layer 112. The first electrode 111 is connected to the first semiconductor layer 112, the quantum well layer 113 is connected to the first semiconductor layer 112, and the second semiconductor layer 114 is connected to the quantum well layer 113 and to the second electrode 115. A certain gap exists between the quantum well layer 113 and the first electrode 111. Of the first semiconductor layer 112 and the second semiconductor layer 114, one is a P-type semiconductor layer for transporting holes, and the other is an N-type semiconductor layer for transporting electrons.

[0039] The light conversion layer may include multiple quantum dot filling structures facing each other, with the target unit being an example. The quantum dot filling structure facing the target unit serves as the target filling structure. The orthogonal projection of the target unit onto the light conversion layer may fall within the region of the target filling structure or may overlap with the region of the target filling structure. The light emitted from the target filling structure is red, green, or blue light.

[0040] refer to Figure 1As shown, the plurality of light-emitting units may include a first light-emitting unit 11, a second light-emitting unit 12, and a third light-emitting unit 13. The first light-emitting unit 11, the second light-emitting unit 12, and the third light-emitting unit 13 can emit the same light. The target unit can be at least one of the first light-emitting unit 11, the second light-emitting unit 12, and the third light-emitting unit 13. (Reference) Figure 1 and Figure 3 As shown, Figure 3 This is a top view schematic diagram of a display panel provided in an embodiment of this application. In the light conversion layer, the quantum dot filling structure opposite the first light-emitting unit 11 is designated as the first filling structure 21, the quantum dot filling structure opposite the second light-emitting unit 12 is designated as the second filling structure 23, and the quantum dot filling structure opposite the third light-emitting unit 13 is designated as the third filling structure 25. Light emitted from the first light-emitting unit 11 is emitted as red light after passing through the first filling structure 21, light emitted from the second light-emitting unit 12 is emitted as green light after passing through the second filling structure 23, and light emitted from the third light-emitting unit 13 is emitted as blue light after passing through the third filling structure 25. This achieves full-color display of the display panel.

[0041] Specifically, the first filling structure 21 may include red quantum dots, so that the blue light or ultraviolet light emitted by the first light-emitting unit 11 is converted into red light and emitted; the second filling structure 23 may include green quantum dots, so that the blue light or ultraviolet light emitted by the second light-emitting unit 12 is converted into green light and emitted; when the light emitted by the third light-emitting unit 13 is blue light, the third filling structure 25 may be a transparent material, which may or may not contain scattering particles, so that the blue light emitted by the third light-emitting unit 13 is still emitted as blue light after passing through the third filling structure 25; when the light emitted by the third light-emitting unit 13 is ultraviolet light, the third filling structure 25 may include blue quantum dots, so that the ultraviolet light emitted by the third light-emitting unit 13 is converted into blue light and emitted.

[0042] Quantum dots are tiny particles that can exhibit photoluminescence; when struck with energy, they emit specific light corresponding to their size. Quantum dots can be nanometer-sized, and can be quantum dot nanoparticles. Colors converted through a light conversion layer including quantum dots are purer than light converted through traditional color filters, resulting in stronger color saturation in display panels and higher conversion efficiency, thus saving energy. Quantum dots of different sizes can convert light into different colors.

[0043] In practice, the light conversion layer may include a quantum dot substrate 200, which has grooves away from the light-emitting layer. A quantum dot filling structure is disposed in the grooves, and its shape is determined by the shape of the grooves. The quantum dot substrate 200 can be a transparent structure, and its material can be an inorganic material, such as silicon oxide, silicon nitride, or aluminum oxide.

[0044] The first filling structure 21 can be disposed in the first groove, the second filling structure 23 can be disposed in the second groove, and the third filling structure 25 can be disposed in the third groove. Alternatively, the third filling structure 25 can be a part of the structure of the quantum dot substrate 200, that is, the quantum dot substrate 200 does not have a third groove. The transparent material of the third filling structure 25 is the quantum dot substrate 522 itself. In this case, the third filling structure 25 does not contain scattering particles.

[0045] The first filling structure 21 and the second filling structure 23 may further include quantum dot photoresist or organic materials. When a third groove for accommodating the third filling structure 25 is provided on the quantum dot substrate 200, the third filling structure 25 may include quantum dot photoresist or organic materials, so that the transparent material of the third filling structure 25 has the same optical properties as the first filling structure 21 and the second filling structure 23, such as having the same absorption, reflection, and scattering effects. That is, quantum dots (including red quantum dots, green quantum dots, and blue quantum dots) can be distributed in quantum dot photoresist or organic materials.

[0046] Quantum dot photoresist can be formed by spin coating. Excess quantum dot photoresist is removed by photolithography, leaving the quantum dot photoresist in a specific area, which is then cured. The organic material surrounding the quantum dots can be printed onto the specific area using inkjet printing technology, and then cured.

[0047] Because the light-emitting unit itself has light-emitting and non-light-emitting areas, its light emission is uneven. Therefore, the light after being converted by the light conversion layer is also uneven, resulting in poor display uniformity of the display panel.

[0048] In this embodiment, taking the target unit and its corresponding target filling structure as an example, the target filling structure includes a first quantum dot filling structure facing the non-light-emitting area of ​​the target unit and a second quantum dot filling structure facing the light-emitting area of ​​the target unit. The number of quantum dots in the columnar structure corresponding to a unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to a unit area of ​​the second quantum dot filling structure. The aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the light conversion efficiency. That is, the light intensity of the non-light-emitting area is weaker than that of the light-emitting area. By setting the light conversion layer, the light from the non-light-emitting area passes through more quantum dots to achieve higher efficiency light conversion. The intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity between the non-light-emitting area and the light-emitting area, improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel.

[0049] refer to Figure 1 , Figure 2 and Figure 3 As shown, the first filling structure 21, the second filling structure 23, and the third filling structure 25 can all be used as target filling structures. Taking the first light-emitting unit as the target unit and the first filling structure as the target filling structure, the target filling structure includes the first quantum dot filling structure 210 and the second quantum dot filling structure 220. The following explanation uses the first filling structure 21 as an example. The settings of the second filling structure 23 and the third filling structure 25 can refer to the settings of the first filling structure 21. The dimension of the first quantum dot filling structure 210 in the first direction is denoted as W2, the dimension of the second quantum dot filling structure 220 in the first direction is denoted as W3, and the total dimension of the target filling structure in the first direction is denoted as W1 = W2 + W3.

[0050] In this embodiment, the sum of the projected areas of the emitting and non-emitting regions of the target unit within the plane of the extended plane of the parallel light conversion layer is less than the sum of the projected areas of the first quantum dot filling structure and the second quantum dot filling structure within the plane of the extended plane of the parallel light conversion layer. Specifically, the projected area of ​​the emitting region of the target unit within the plane of the extended plane of the parallel light conversion layer can be less than the projected area of ​​the first quantum dot filling structure within the plane of the extended plane of the parallel light conversion layer, and the projected area of ​​the non-emitting region of the target unit within the plane of the extended plane of the parallel light conversion layer can be less than or equal to the projected area of ​​the second quantum dot filling structure within the plane of the extended plane of the parallel light conversion layer. This ensures good light conversion coverage of the light emitted by the emitting unit by the quantum dot filling structure and prevents light leakage from the periphery of the quantum dot filling structure to the light-emitting side.

[0051] In practice, the size W8 of the target cell in the first direction can be smaller than the size W1 of the target filling structure in the first direction, the size W6 of the light-emitting region in the first direction can be smaller than the size W3 of the second quantum dot filling structure in the first direction, and the size W7 of the non-light-emitting region in the first direction can be smaller than or equal to the size W2 of the first quantum dot filling structure in the first direction.

[0052] One approach is to set the quantum dot concentration of the first quantum dot filling structure to be greater than that of the second quantum dot filling structure, i.e., there is a concentration gradient in the target filling structure. In this way, when the first and second quantum dot filling structures have the same thickness, the number of quantum dots in the columnar structure per unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure per unit area of ​​the second quantum dot filling structure, thereby giving the first quantum dot filling structure a higher light conversion efficiency.

[0053] The ratio of the quantum dot concentration of the first quantum dot-filled structure to the quantum dot concentration of the second quantum dot-filled structure is less than 2. The quantum dot concentration of the first quantum dot-filled structure is denoted as C1, and the quantum dot concentration of the second quantum dot-filled structure is denoted as C2. That is, C1 > C2, and C1 / C2 < 2, specifically, 1.05 < C1 / C2 < 1.1.

[0054] In practice, since the luminescence intensity within the luminescent region may be uneven—for example, due to the reflection of light by the sidewalls, the edge region of the luminescent region may have higher luminescence brightness than the central region—a concentration gradient can be incorporated into the second quantum dot filling structure. Specifically, the second quantum dot filling structure can include a central structure and an edge structure. The edge structure can be a region that completely surrounds the central structure or a region that partially surrounds the central structure.

[0055] refer to Figure 4 The diagram shown is a structural schematic of another display panel provided in an embodiment of this application. (Refer to...) Figure 5 The diagram shown is a top view of another display panel provided in an embodiment of this application. The first filling structure 21 serves as the target filling structure and may include a first quantum dot filling structure 210 and a second quantum dot filling structure 220. The second quantum dot filling structure 220 may include a central structure 221 and an edge structure 222. The edge structure 222 surrounds the central structure 221. The dimension of the central structure 221 in the first direction is denoted as W5, and the width of the edge structure 222 is denoted as W4. Then, the dimension of the second quantum dot filling structure 220 in the first direction is W3 = W4 + W5.

[0056] The quantum dot concentration in the central structure can be greater than that in the edge structure, resulting in higher conversion efficiency in the central structure. Let the quantum dot concentration in the central structure be denoted as C2, and the quantum dot concentration in the edge structure as C3, where C2 > C3 and C2 / C3 < 2, specifically 1.05 < C2 / C3 < 1.1.

[0057] As another implementation, the thickness of the first quantum dot filling structure can be set to be greater than that of the second quantum dot filling structure, that is, there is a thickness gradient in the target filling structure. In this way, when the first quantum dot filling structure and the second quantum dot filling structure have the same quantum dot concentration, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, thereby giving the first quantum dot filling structure a higher light conversion efficiency.

[0058] refer to Figure 6 The diagram shown is a structural schematic of another display panel provided in an embodiment of this application. The corresponding top view is shown below. Figure 3As shown, taking the first filling structure 21 as the target filling structure as an example, the first quantum dot filling structure 210 and the second quantum dot filling structure 220 have different thicknesses. The ratio of the thickness of the first quantum dot filling structure to the thickness of the second quantum dot filling structure is less than 2. Let the thickness of the first quantum dot filling structure be denoted as H1 and the thickness of the second quantum dot filling structure be denoted as H2, that is, H1 > H2 and H1 / H2 < 2, specifically, 1.05 < H1 / H2 < 1.1.

[0059] In practice, since the luminescence intensity within the luminescent region may be uneven, the second quantum dot filling structure can be designed with a thickness gradient. Specifically, the second quantum dot filling structure can include a central structure and an edge structure. The edge structure can be a region that completely surrounds the central structure or a region that partially surrounds the central structure.

[0060] refer to Figure 7 The diagram shown is a structural schematic of another display panel provided in an embodiment of this application. The corresponding top view is shown in the reference diagram. Figure 5 As shown, the thickness of the central structure can be greater than the thickness of the edge structure, giving the central structure higher conversion efficiency. Let the thickness of the central structure be H3, and the thickness of the edge structure be H4, where H3 > H4 and H3 / H4 < 2, specifically 1.05 < H3 / H4 < 1.1. In this case, H3 can be equal to the aforementioned H2.

[0061] When the target filling structure has a thickness gradient, the surfaces of the first and second quantum dot filling structures away from the light-emitting unit can be flush, while the surfaces facing the light-emitting unit can be stepped. That is, the surface of the first quantum dot filling structure facing the light-emitting unit can protrude beyond the surface of the second quantum dot filling structure facing the light-emitting unit. (Refer to...) Figure 6 and Figure 7 As shown. When the second quantum dot filling structure has a thickness gradient, the surfaces of the central structure and the edge structure away from the light-emitting unit can be flush, while the surfaces facing the light-emitting unit can be stepped, meaning the surface of the central structure facing the light-emitting unit can protrude beyond the surface of the edge structure facing the light-emitting unit. This stepped surface can be achieved through the stepped shape of the grooves.

[0062] As another implementation, the thickness of the first quantum dot filling structure can be set to be greater than the thickness of the second quantum dot filling structure, and the quantum dot concentration of the first quantum dot filling structure can be greater than the quantum dot concentration of the second quantum dot filling structure. That is, the first quantum dot filling structure and the second quantum dot filling structure can have thickness gradient and concentration gradient, so that the number of quantum dots in the columnar structure corresponding to a unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to a unit area of ​​the second quantum dot filling structure, thereby giving the first quantum dot filling structure higher light conversion efficiency.

[0063] The second quantum dot filling structure can include a central structure and an edge structure. The edge structure can be a region that completely surrounds the central structure or a region that partially surrounds the central structure. The thickness of the central structure can be greater than the thickness of the edge structure, and the quantum dot concentration of the central structure can be greater than that of the edge structure, giving the central structure a higher conversion efficiency.

[0064] This application provides a display panel, including a light-emitting layer on a back panel and a light conversion layer stacked on top of the light-emitting layer. The light-emitting layer has multiple light-emitting units, each including a light-emitting area and a non-light-emitting area. The light conversion layer includes quantum dot filling structures facing each of the multiple light-emitting units. Among the multiple light-emitting units is a target unit. The quantum dot filling structure facing the target unit serves as the target filling structure. The target filling structure includes a first quantum dot filling structure facing the non-light-emitting area of ​​the target unit and a second quantum dot filling structure facing the light-emitting area of ​​the target unit. The columnar structure corresponding to a unit area of ​​the first quantum dot filling structure... The number of quantum dots in the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure. The aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the light conversion efficiency. In other words, the light intensity of the non-light-emitting area is weaker than that of the light-emitting area. By setting the light conversion layer, the light in the non-light-emitting area passes through more quantum dots to achieve higher efficiency light conversion. The intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity between the non-light-emitting area and the light-emitting area, improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel.

[0065] This application also provides a display device, including the display panel described in the above embodiments.

[0066] refer to Figure 8This is a schematic diagram of the planar structure of a display device provided in an embodiment of this application. As shown in the figure, the display device 1000 includes a display panel 10, which is the display panel 10 described in any of the above embodiments. The display device 1000 provided in this application embodiment can be a mobile phone, computer, television, vehicle-mounted display device, or other display device with display functions; this application embodiment does not specifically limit its capabilities. The display device 1000 provided in this application embodiment has the beneficial effects of the display panel 10 provided in the above embodiments. For details, please refer to the specific description of the display panel in the above embodiments; this application embodiment will not repeat the description here.

[0067] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. In particular, the display device embodiments are basically similar to the display panel embodiments, so the description is relatively simple; relevant parts can be referred to the description of the display panel embodiments.

[0068] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A display panel, characterized by, The display panel comprises: a light-emitting layer on a back plate, a plurality of light-emitting units being arranged in the light-emitting layer, the light-emitting units comprising light-emitting regions and non-light-emitting regions; a light conversion layer stacked with the light-emitting layer, the light conversion layer comprising quantum dot filling structures respectively facing the plurality of light-emitting units; the plurality of light-emitting units having a target unit, the quantum dot filling structure facing the target unit being a target filling structure; the target filling structure comprising a first quantum dot filling structure facing the non-light-emitting region of the target unit and a second quantum dot filling structure facing the light-emitting region of the target unit, the number of quantum dots in the columnar structure corresponding to a unit area of the first quantum dot filling structure being greater than the number of quantum dots in the columnar structure corresponding to a unit area of the second quantum dot filling structure, the unit area being parallel to the extension plane of the light conversion layer.

2. The display panel of claim 1, wherein, The quantum dot concentration of the first quantum dot filling structure is greater than the quantum dot concentration of the second quantum dot filling structure.

3. The display panel of claim 2, wherein, The second quantum dot filling structure comprises a center structure and an edge structure, the quantum dot concentration of the center structure being greater than the quantum dot concentration of the edge structure.

4. The display panel of claim 2, wherein, The ratio of the quantum dot concentration of the first quantum dot filling structure to the quantum dot concentration of the second quantum dot filling structure is less than 2.

5. The display panel of claim 1, wherein, The thickness of the first quantum dot filling structure is greater than the thickness of the second quantum dot filling structure.

6. The display panel of claim 5, wherein, The second quantum dot filling structure comprises a center structure and an edge structure, the thickness of the center structure being greater than the thickness of the edge structure.

7. The display panel of claim 5, wherein, The side surface of the first quantum dot filling structure and the side surface of the second quantum dot filling structure away from the light-emitting unit are flush, and the side surface of the first quantum dot filling structure and the side surface of the second quantum dot filling structure toward the light-emitting unit are in a stepped shape.

8. The display panel of claim 5, wherein, The ratio of the thickness of the first quantum dot filling structure to the thickness of the second quantum dot filling structure is less than 2.

9. The display panel of any of claims 1-8, wherein, The sum of the projection areas of the light-emitting region and the non-light-emitting region of the target unit in a plane parallel to the extension plane of the light conversion layer is less than the sum of the projection areas of the first quantum dot filling structure and the second quantum dot filling structure in a plane parallel to the extension plane of the light conversion layer.

10. The display panel of any of claims 1-8, wherein, The light-emitting unit comprises a first semiconductor layer, a first electrode located in the non-light-emitting region and on the first side of the first semiconductor layer, a quantum well layer located in the light-emitting region and on the first side of the first semiconductor layer, a second semiconductor layer, and a second electrode, the first electrode being connected with the first semiconductor layer, the quantum well layer being connected with the first semiconductor layer, the second semiconductor layer being connected with the quantum well layer and the second electrode.

11. The display panel of any of claims 1-8, wherein, The light conversion layer comprises a quantum dot substrate, the quantum dot substrate having a groove away from the light-emitting layer, and the quantum dot filling structure is arranged in the groove.

12. A display device, characterized by comprising: The display panel comprises any one of claims 1-11.

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