Ceramic three-dimensional packaging structure and preparation method

Abstract

The application provides a ceramic three-dimensional packaging structure, signals can be transmitted from one side of a multilayer ceramic substrate to the other side of the multilayer ceramic substrate, first substrates are arranged on the two sides of the multilayer ceramic substrate, vertical interconnection through holes are arranged on each first substrate, walls are arranged between the multilayer ceramic substrate and the first substrates, chips are arranged in sealed cavities, and the chips are connected with the multilayer ceramic substrate or the first substrates; vertical interconnection columns are arranged between the multilayer ceramic substrate and the first substrates, the vertical interconnection columns are connected with the vertical interconnection through holes, and each sealed cavity is provided with a vertical interconnection column. The vertical interconnection columns and the vertical interconnection through holes are arranged between the multilayer ceramic substrate and the first substrates to realize conduction, so that the signals can be transmitted from one side of the multilayer ceramic substrate to the other side of the multilayer ceramic substrate and then transmitted from the connecting points of the first substrates, vertical interconnection of the signals is realized, and the signals can be transmitted from the two first substrates, so that double-side leading-out of the signals is realized.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of chip packaging, and more particularly to a ceramic three-dimensional packaging structure, and further to a ceramic three-dimensional packaging preparation method. BACKGROUND

[0002] With the continuous development of communication technology, radio frequency transceiver components develop towards low cost, miniaturization, high heat dissipation and integrated antenna. High isolation, high heat dissipation and three-dimensional integrated packaging modules have become an inevitable trend of industry development. Ceramic packaging can meet the demand of air-tight packaging due to its high reliability, and is widely used in the fields of national defense and 5G communication. However, the current ceramic packaging is mainly 2D packaging, which cannot realize vertical interconnection of signals and double-sided lead-out of signals. SUMMARY

[0003] The purpose of the present application is to provide a ceramic three-dimensional packaging structure to realize vertical interconnection of signals and double-sided lead-out of signals.

[0004] To achieve the above purpose, the technical solution adopted by the present application is to provide a ceramic three-dimensional packaging structure, which comprises a ceramic three-dimensional packaging structure, two first substrates, a wall and a plurality of vertical interconnection columns. Signals can be transmitted from one side of the multilayer ceramic substrate to the other side of the multilayer ceramic substrate. The first substrate is arranged on both sides of the multilayer ceramic substrate, and each first substrate is provided with a vertical interconnection through hole. Signals can be transmitted from one side of the first substrate to the other side of the first substrate through the vertical interconnection through hole. The side of the first substrate away from the multilayer ceramic substrate is provided with a surface redistribution layer, and a connection point is connected with the surface redistribution layer. The connection point is used to connect with external components. The wall is arranged between the multilayer ceramic substrate and the first substrate, and the wall divides the space between the multilayer ceramic substrate and the first substrate into a plurality of sealed cavities. Chips are arranged in the sealed cavities, and the chips are connected with the multilayer ceramic substrate or the first substrate. The vertical interconnection columns are arranged between the multilayer ceramic substrate and the first substrate, and the vertical interconnection columns are connected with the vertical interconnection through holes. Each sealed cavity is provided with a vertical interconnection column. Signals can be transmitted from the first substrate to the multilayer ceramic substrate through the vertical interconnection column, and signals can be transmitted from the multilayer ceramic substrate to the first substrate through the vertical interconnection column.

[0005] In a possible implementation, the first substrate is provided with a plurality of first pads on the side facing the multilayer ceramic substrate, the multilayer ceramic substrate is provided with a plurality of second pads on the two sides, the first pads correspond to the second pads one by one, and the wall is welded by solder between the corresponding first pads and second pads; the first substrate is provided with a plurality of first transmission pads on the side facing the multilayer ceramic substrate, the multilayer ceramic substrate is provided with a plurality of second transmission pads on the two sides, the first transmission pads correspond to the second transmission pads one by one, the vertical interconnection column is welded by solder between the corresponding first transmission pads and second transmission pads, and the transmission pads are connected with the vertical interconnection holes.

[0006] In a possible implementation, the first substrate is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramic, glass, silicon carbide, and silicon.

[0007] In a possible implementation, the wall is made of Kovar or copper, and the coplanarity of the wall and the vertical interconnection column is less than 20 μm.

[0008] In a possible implementation, the multilayer ceramic substrate is any one of high-temperature co-fired ceramic or low-temperature co-fired ceramic.

[0009] In a possible implementation, the multilayer ceramic substrate is welded with the wall and the vertical interconnection column, and the first substrate is welded with the wall and the vertical interconnection column, and the welding manner is any one of single-sided welding or double-sided welding.

[0010] The ceramic three-dimensional packaging structure provided by the application has the following beneficial effects: compared with the prior art, the application sets the first substrate on the two sides of the multilayer ceramic substrate, sets the vertical interconnection column between the multilayer ceramic substrate and the first substrate, and makes the vertical interconnection column conductive with the vertical interconnection hole, so that the signal can be transmitted from one side of the multilayer ceramic substrate to the other side of the multilayer ceramic substrate and delivered from the connection point of the first substrate, realizing vertical interconnection of the signal, and the signal can be delivered from the two first substrates, realizing double-sided leading-out of the signal.

[0011] The application also relates to a ceramic three-dimensional packaging preparation method, which comprises the following steps:

[0012] S1: a multilayer ceramic substrate is prepared by using a low-temperature co-fired ceramic or high-temperature co-fired ceramic process;

[0013] S2: a wall is welded to the pads of the multilayer ceramic substrate, and a vertical interconnection column is welded to the transmission pads of the multilayer ceramic substrate;

[0014] S3: bonding the chip to the multilayer ceramic substrate or the first substrate, and connecting the pad of the chip and the transmission pad of the multilayer ceramic substrate or the first substrate by wire bonding;

[0015] S4: welding the pad of the first substrate and the wall, and welding the transmission pad of the first substrate and the vertical interconnection column.

[0016] In a possible implementation, in step S2, the solder is silver-copper solder.

[0017] In a possible implementation, in step S3, the bonding of the chip uses one or more of nano-sintered silver and conductive glue.

[0018] In a possible implementation, in step S4, the solder is gold-tin solder.

[0019] The ceramic three-dimensional packaging preparation method provided by the application has the beneficial effect that, compared with the prior art, the method can be used to manufacture a ceramic three-dimensional packaging structure, and thus realizes vertical interconnection of signals and double-sided lead-out of signals. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description only some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0021] Figure 1 The structural schematic diagram of the ceramic three-dimensional packaging structure provided by the embodiment of the application is shown in the figure.

[0022] Figure 2 The structural schematic diagram of the multilayer ceramic substrate provided by the embodiment of the application is shown in the figure.

[0023] Figure 3 The structural schematic diagram of the multilayer ceramic substrate after the wall and the vertical interconnection column are welded provided by the embodiment of the application is shown in the figure.

[0024] Figure 4 The structural schematic diagram of the multilayer ceramic substrate after the chip is mounted provided by the embodiment of the application is shown in the figure.

[0025] Figure 5 The structural schematic diagram of the first substrate after the chip is mounted provided by the embodiment of the application is shown in the figure.

[0026] In the figure, the various reference signs are as follows:

[0027] 1, first substrate; 2, multilayer ceramic substrate; 3, sealed cavity; 4, second pad; 5, solder; 6, chip; 7, connection point;

[0028] 102, vertical interconnection via; 103, first pad; 104, surface redistribution layer; 105, first transmission pad;

[0029] 201, second transmission pad; 202, wall; 203, vertical interconnection column. DETAILED DESCRIPTION

[0030] In order to make the technical problems to be solved by the present application, technical solutions and beneficial effects more clearly, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application.

[0031] It needs to be further explained that the drawings and embodiments of the present application mainly describe and explain the concept of the present application, and on the basis of the concept, the specific forms and settings of some connection relationships, position relationships, power mechanisms, power supply systems, hydraulic systems and control systems may not be completely described, but the skilled in the art can realize the above-mentioned specific forms and settings by using the well-known way on the premise of understanding the concept of the present application.

[0032] When an element is referred to as being "fixed to" or "set to" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0033] The terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0034] The terms "first", "second" are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, and the meaning of "several" is one or more, unless otherwise explicitly and specifically limited.

[0035] Embodiment one

[0036] The ceramic three-dimensional packaging structure provided by the application will be described.

[0037] Please refer to Figure 1 The ceramic three-dimensional packaging structure comprises a ceramic three-dimensional packaging structure, two first substrates 1, a wall 202 and a plurality of vertical interconnection columns 203. Signals can be transmitted from one side of the multilayer ceramic substrate 2 to the other side of the multilayer ceramic substrate 2. The first substrates 1 are arranged on both sides of the multilayer ceramic substrate 2. Each first substrate 1 is provided with a vertical interconnection via hole 102. Signals can be transmitted from one side of the first substrate 1 to the other side of the first substrate 1 through the vertical interconnection via hole 102. The side of the first substrate 1 away from the multilayer ceramic substrate 2 is provided with a surface redistribution layer 104. The surface redistribution layer 104 is connected with a connecting point 7. The connecting point 7 is used to connect with external components. The wall 202 is arranged between the multilayer ceramic substrate 2 and the first substrate 1. The wall 202 divides the space between the multilayer ceramic substrate 2 and the first substrate 1 into a plurality of sealed cavities 3. The chip 6 is arranged in the sealed cavity 3. The chip 6 is connected with the multilayer ceramic substrate 2 or the first substrate 1. The vertical interconnection column is arranged between the multilayer ceramic substrate 2 and the first substrate 1. The vertical interconnection column is connected with the vertical interconnection via hole 102. Each sealed cavity 3 is provided with a vertical interconnection column. Signals can be transmitted from the first substrate 1 to the multilayer ceramic substrate 2 through the vertical interconnection column. Signals can be transmitted from the multilayer ceramic substrate 2 to the first substrate 1 through the vertical interconnection column.

[0038] The ceramic three-dimensional packaging structure provided by the embodiment has the following beneficial effects. Compared with the prior art, the ceramic three-dimensional packaging structure provided by the embodiment is provided with the first substrate 1 on both sides of the multilayer ceramic substrate 2. The vertical interconnection column is arranged between the multilayer ceramic substrate 2 and the first substrate 1. The vertical interconnection column 203 is in conduction with the vertical interconnection via hole 102. Signals can be transmitted from one side of the multilayer ceramic substrate 2 to the other side of the multilayer ceramic substrate 2. The signals can be transmitted out of the connecting point 7 of the first substrate 1. The vertical interconnection of the signals is realized. The signals can be transmitted out of the two first substrates 1. The double-sided lead-out of the signals is realized.

[0039] In the embodiment, the first substrate 1 has a plurality of first pads 103 on the side facing the multilayer ceramic substrate 2, the multilayer ceramic substrate 2 has a plurality of second pads 4 on the two sides, the first pads 103 correspond to the second pads 4 one by one, and the wall body 202 is welded between the corresponding first pads 103 and second pads 4 by solder 5; the first substrate 1 has a plurality of first transmission pads 105 on the side facing the multilayer ceramic substrate 2, the multilayer ceramic substrate 2 has a plurality of second transmission pads 201 on the two sides, the first transmission pads 105 correspond to the second transmission pads 201 one by one, and the vertical interconnection column 203 is welded between the corresponding first transmission pads 105 and second transmission pads 201 by solder 5, and the transmission pads are connected with the vertical interconnection holes. The arrangement of the first pads 103 and the second pads 4 facilitates the installation of the wall body 202 between the first substrate 1 and the multilayer ceramic substrate 2.

[0040] In addition, the first substrate 1 is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramic, glass, silicon carbide, and silicon. The above-mentioned materials are common materials and are easy to obtain.

[0041] As a preferred technical solution, the material of the wall body 202 is Kovar or copper, and the two materials have good thermal expansion properties. The coplanarity of the wall body 202 and the vertical interconnection column is less than 20 μm, which facilitates the guarantee of the welding quality.

[0042] In the embodiment, the multilayer ceramic substrate 2 is any one of high-temperature co-fired ceramic or low-temperature co-fired ceramic.

[0043] Finally, the connection mode of the multilayer ceramic substrate 2, the wall body 202, and the vertical interconnection column is welding, and the connection mode of the first substrate 1, the wall body 202, and the vertical interconnection column is welding. The welding mode is any one of single-sided welding or double-sided welding. The above-mentioned welding mode is a common welding process and is easy to produce.

[0044] Embodiment two

[0045] Please refer to Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 1 , the method comprises the following steps:

[0046] S1: using a low-temperature co-fired ceramic or high-temperature co-fired ceramic process to prepare a multilayer ceramic substrate 2;

[0047] S2: welding the wall body 202 to the pads of the multilayer ceramic substrate 2; and welding the vertical interconnection column to the transmission pads of the multilayer ceramic substrate 2;

[0048] S3: bonding the chip 6 to the multilayer ceramic substrate 2 or the first substrate 1, and connecting the pads of the chip 6 to the transmission pads of the multilayer ceramic substrate 2 or the first substrate 1 by wire bonding;

[0049] S4: welding the pads of the first substrate 1 to the wall 202, and welding the transmission pads of the first substrate 1 to the vertical interconnection column.

[0050] Specifically, in step S2, the solder 5 used for welding is silver-copper solder 5. In step S4, the solder 5 used for welding is gold-tin solder 5. Since the melting point of the silver-copper solder 5 is higher than that of the gold-tin solder 5, the welding in step S4 will not cause the position welded in step S2 to open.

[0051] The ceramic three-dimensional packaging preparation method provided by the application can make ceramic three-dimensional packaging structures, and further realize vertical interconnection of signals and double-sided lead-out of signals.

[0052] The above is only a preferred embodiment of the application, and is not used to limit the application. Any modification, equivalent replacement and improvement made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A ceramic three-dimensional packaging structure, characterized in that, include: A multilayer ceramic substrate (2) is provided, and a signal can be transmitted from one side of the multilayer ceramic substrate (2) to the other side of the multilayer ceramic substrate (2); Two first substrates (1) are disposed on both sides of the multilayer ceramic substrate (2). Each first substrate (1) is provided with a vertical interconnect via (102). Signals can be transmitted from one side of the first substrate (1) to the other side of the first substrate (1) through the vertical interconnect via (102). A surface redistribution layer (104) is provided on the side of the first substrate (1) facing away from the multilayer ceramic substrate (2). A connection point (7) is provided connected to the surface redistribution layer (104). The connection point (7) is used to connect with external components. A wall (202) is disposed between the multilayer ceramic substrate (2) and the first substrate (1). The wall (202) divides the space between the multilayer ceramic substrate (2) and the first substrate (1) into multiple sealed cavities (3). A chip (6) is disposed in the sealed cavity (3). The chip (6) is connected to the multilayer ceramic substrate (2) or the first substrate (1). Multiple vertical interconnect pillars are disposed between the multilayer ceramic substrate (2) and the first substrate (1). The vertical interconnect pillars are connected to vertical interconnect vias (102). Each of the sealed cavities (3) is provided with a vertical interconnect pillar. Signals can be transmitted from the first substrate (1) to the multilayer ceramic substrate (2) through the vertical interconnect pillars, and signals can be transmitted from the multilayer ceramic substrate (2) to the first substrate (1) through the vertical interconnect pillars.

2. The ceramic three-dimensional packaging structure as described in claim 1, characterized in that: The first substrate (1) has a plurality of first pads (103) on one side facing the multilayer ceramic substrate (2), and the multilayer ceramic substrate (2) has a plurality of second pads (4) on both sides. The first pads (103) and the second pads (4) correspond one-to-one. The wall (202) is soldered between the corresponding first pads (103) and the second pads (4) by solder (5). The first substrate (1) has a plurality of first transfer pads (105) on one side facing the multilayer ceramic substrate (2), and the multilayer ceramic substrate (2) has a plurality of second transfer pads (201) on both sides. The first transfer pads (105) and the second transfer pads (201) correspond one-to-one. Vertical interconnect pillars (203) are soldered between the corresponding first transfer pads (105) and second transfer pads (201) by solder (5). The transfer pads are connected to vertical interconnect vias.

3. The ceramic three-dimensional packaging structure as described in claim 2, characterized in that: The first substrate (1) is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramic, glass, silicon carbide, and silicon.

4. The ceramic three-dimensional packaging structure as described in claim 3, characterized in that: The wall (202) is made of Kovar or copper, and the coplanarity of the wall (202) and the vertical interconnecting column is less than 20 μm.

5. The ceramic three-dimensional packaging structure as described in claim 4, characterized in that: The multilayer ceramic substrate (2) is either a high-temperature co-fired ceramic or a low-temperature co-fired ceramic.

6. The ceramic three-dimensional packaging structure as described in claim 5, characterized in that: The multilayer ceramic substrate (2) is connected to the wall (202) and the vertical interconnect column by welding, and the first substrate (1) is connected to the wall (202) and the vertical interconnect column by welding, and the welding method is either single-sided welding or double-sided welding.

7. A method for fabricating a ceramic three-dimensional package, used to prepare the ceramic three-dimensional package structure as described in claim 1, characterized in that, include: S1: Multilayer ceramic substrates are prepared using low-temperature co-fired ceramic or high-temperature co-fired ceramic processes (2). S2: Solder the wall (202) to the pads of the multilayer ceramic substrate (2); solder the vertical interconnect post to the transfer pads of the multilayer ceramic substrate (2); S3: Attach the chip (6) to the multilayer ceramic substrate (2) or the first substrate (1), and connect the pads of the chip (6) to the transfer pads of the multilayer ceramic substrate (2) or the first substrate (1) by wire bonding. S4: Solder the pads of the first substrate (1) to the wall (202), and solder the transfer pads of the first substrate (1) to the vertical interconnect pillars.

8. The method for preparing three-dimensional ceramic packaging as described in claim 7, characterized in that: In step S2, the solder used for welding is silver-copper solder (5).

9. The method for preparing three-dimensional ceramic packaging as described in claim 8, characterized in that: In step S3, the chip (6) is bonded using one or more of nano-sintered silver and conductive adhesive.

10. The method for preparing three-dimensional ceramic packaging as described in claim 9, characterized in that: In step S4, the solder (5) used for welding is gold-tin solder (5).

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