Display panel, preparation method thereof and display device

Abstract

The invention discloses a display panel, a preparation method thereof and a display device, and relates to the technical field of display. The display panel comprises a substrate, and a first electrode, a light-emitting layer, a protective layer and a second electrode which are sequentially stacked on one side of the substrate. Due to the influence of a preparation process of the display panel, target particles are easily embedded into the light-emitting layer, and a gap communicated with one side, far away from the substrate, of the light-emitting layer is formed between the embedded target particles and the light-emitting layer, so that a first part, insulated from the first electrode and the second electrode, in the protective layer is filled in the gap; the formed second electrode can be prevented from permeating to the first electrode along the gap, so that short circuit of the first electrode and the second electrode is avoided, the yield of the display panel can be ensured, and the display effect of the display device is ensured.

Description

Display panel and manufacturing method thereof, and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Organic light emitting diode (OLED) display panels have been widely used due to their characteristics of self-luminescence, low driving voltage, and fast response.

[0003] Summary of the Invention

[0004] This application provides a display panel and a method for manufacturing the same, and a display device. The technical solutions are as follows:

[0005] In one aspect, a display panel is provided, comprising: a base substrate, and a first electrode, a light-emitting layer, a protective layer, and a second electrode stacked in sequence on one side of the base substrate;

[0006] Target particles are embedded in the side of the light-emitting layer away from the base substrate, and a gap is formed between the light-emitting layer and the target particles, connecting the side of the light-emitting layer away from the base substrate;

[0007] The protection layer includes at least a first portion that is insulated from both the first electrode and the second electrode, and the first portion fills the gap.

[0008] Optionally, the target particles protrude from a surface of the light-emitting layer away from the base substrate, and are embedded in a portion of the light-emitting layer, with an orthographic projection of a side close to the base substrate on the base substrate being within an orthographic projection of a side away from the base substrate on the base substrate; and the protective layer further includes a second portion located outside the gap;

[0009] The material of the first portion is an oxide of the first material, and the material of the second portion is a second material; the first material cannot be evaporated onto the second material.

[0010] Optionally, the first material is lithium hydroxyquinoline, and the second material is magnesium.

[0011] Optionally, the protective layer further includes a second portion located outside the gap;

[0012] The second part and the first part are an integrated structure.

[0013] Optionally, the number of oxygen vacancies in the protective layer is less than the number of oxygen vacancies in the second electrode.

[0014] Optionally, the film density of the protective layer is greater than the film density of the second electrode.

[0015] Optionally, the materials of the first part and the second part are both inorganic materials.

[0016] Optionally, the thickness of the first portion in a direction perpendicular to the substrate ranges from 2 nanometers to 5 nanometers.

[0017] Optionally, the inorganic material is at least one of silicon oxide, silicon nitride and silicon oxynitride.

[0018] Optionally, the first portion and the second portion of the protective layer each include a first sublayer and a second sublayer sequentially stacked in a direction away from the substrate;

[0019] The impedance of the second sub-layer is greater than the impedance of the first sub-layer, and greater than the impedance of the second electrode.

[0020] Optionally, the number of oxygen vacancies in the second sublayer is less than the number of oxygen vacancies in the first sublayer, and less than the number of oxygen vacancies in the second electrode.

[0021] Optionally, the film density of the second sub-layer is greater than the film density of the second electrode, and greater than the film density of the first sub-layer.

[0022] In another aspect, a method for preparing a display panel is provided, the method comprising:

[0023] obtaining a substrate;

[0024] forming a first electrode, a light-emitting layer, a protective layer and a second electrode in sequence on one side of the base substrate;

[0025] Wherein, target particles are embedded in the side of the light-emitting layer away from the base substrate, and a gap is formed between the light-emitting layer and the target particles, connecting the side of the light-emitting layer away from the base substrate;

[0026] The protection layer includes at least a first portion that is insulated from both the first electrode and the second electrode, and the first portion fills the gap.

[0027] Optionally, the target particles protrude from a surface of the light-emitting layer away from the base substrate, and the target particles are embedded in a portion of the light-emitting layer, with an orthographic projection of a side close to the base substrate on the base substrate and located within an orthographic projection of a side away from the base substrate on the base substrate; forming a protective layer includes:

[0028] Vapor-depositing a second material on a side of the light-emitting layer away from the base substrate to form a second portion of the protective layer, wherein the second portion is broken at the gap;

[0029] evaporating a first material in the gap;

[0030] performing an oxidation treatment on the first material to obtain a first portion of the protective layer;

[0031] The second material cannot be evaporated in the region where the first material is formed.

[0032] Optionally, forming a protective layer and a second electrode includes:

[0033] forming a first portion and a second portion of the protective layer when the oxygen concentration in the reaction chamber is a first concentration, wherein the second portion is located outside the gap;

[0034] forming the second electrode when the oxygen concentration in the reaction chamber is a second concentration;

[0035] Wherein, the first concentration is greater than the second concentration.

[0036] Optionally, the first concentration is greater than 4 volume flow rates, and the second concentration is less than 1 volume flow rate.

[0037] Optionally, forming a protective layer includes:

[0038] An inorganic material is used to form a first portion and a second portion of a protective layer on a side of the light-emitting layer away from the base substrate, wherein the second portion is located outside the gap.

[0039] Optionally, forming a protective layer and a second electrode includes:

[0040] forming a first sublayer when the oxygen concentration in the reaction chamber is a third concentration;

[0041] forming a second sublayer when the oxygen concentration in the reaction chamber is a fourth concentration, wherein the second sublayer and the portion of the first sublayer filling the gap constitute a first portion of the protective layer, and the second sublayer and the portion of the first sublayer outside the gap constitute a second portion of the protective layer;

[0042] forming a second electrode when the oxygen concentration in the reaction chamber is a fifth concentration;

[0043] The fourth concentration is greater than the third concentration and greater than the fifth concentration.

[0044] Optionally, the third concentration and the fifth concentration are both less than 1 volume flow rate, and the fourth concentration is greater than 4 volume flow rates.

[0045] In another aspect, a display device is provided, comprising: a power supply component and the display panel according to the above aspect;

[0046] Wherein, the power supply component is used to supply power to the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0048] FIG1 is a schematic structural diagram of a display panel provided in an embodiment of the present application;

[0049] FIG2 is a schematic structural diagram of another display panel provided in an embodiment of the present application;

[0050] FIG3 is a schematic diagram of a dark spot display provided by an embodiment of the present application;

[0051] FIG4 is a graph showing the relationship between wavelength and transmittance provided in an embodiment of the present application;

[0052] FIG5 is a graph showing the relationship between oxygen concentration and resistance provided in an embodiment of the present application;

[0053] FIG6 is a schematic diagram of an electron microscope of a display panel provided in an embodiment of the present application;

[0054] FIG7 is a schematic diagram of an electron microscope of another display panel provided in an embodiment of the present application;

[0055] FIG8 is a schematic diagram of a film layer of a display panel provided in an embodiment of the present application;

[0056] FIG9 is a schematic structural diagram of another display panel provided in an embodiment of the present application;

[0057] FIG10 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0058] FIG11 is a flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0059] FIG12 is a schematic diagram of forming a light-emitting layer according to an embodiment of the present application;

[0060] FIG13 is a schematic diagram of a second portion for forming a protective layer provided in an embodiment of the present application;

[0061] FIG14 is a schematic diagram of forming a first material by evaporating the gap between target particles and a light-emitting layer according to an embodiment of the present application;

[0062] FIG15 is a flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0063] FIG16 is a flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0064] FIG17 is a flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0065] FIG18 is a schematic structural diagram of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0066] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0067] In related art, an OLED device in an OLED display panel generally includes an anode, a light-emitting layer, and a cathode. The light-emitting layer is made of an organic semiconductor material and can emit light when driven by the anode and cathode.

[0068] However, during the preparation of OLED display panels, particles are easily embedded in their light-emitting layers. When the cathode is formed, the cathode material easily penetrates into the anode along the gap between the particles and the light-emitting layer, thereby causing a short circuit between the anode and the cathode. The yield of OLED display panels is low, and the display effect of the display device is poor.

[0069] Figure 1 is a structural schematic diagram of a display panel 1 provided in an embodiment of the present application. Referring to Figure 1, the display panel 1 includes: a base substrate 101, and a first electrode 102, a light-emitting layer 103, a protective layer 104 and a second electrode 105 stacked in sequence on one side of the base substrate 101. Among them, the target particle a is embedded in the side of the light-emitting layer 103 away from the base substrate 101, and there is a gap between the light-emitting layer 103 and the target particle a that connects the side of the light-emitting layer 103 away from the base substrate 101. Among them, the gap in Figure 1 not only connects the side of the light-emitting layer 103 away from the base substrate 101, but also connects the side of the light-emitting layer 103 close to the base substrate 101. That is, one side of the target particle a in Figure 1 is in contact with the first electrode 102, and the other side protrudes from the surface of the light-emitting layer 103 away from the base substrate 101. The first electrode 102 can be an anode, and the second electrode 105 can be a cathode.

[0070] 1 , the protective layer 104 includes at least a first portion 1041 that is insulated from both the first electrode 102 and the second electrode 105. For example, the impedance of the first portion 1041 is greater than an impedance threshold, which may be sufficiently large to render the first portion 1041 insulating rather than conductive.

[0071] Moreover, since the first portion 1041 fills the gap between the light-emitting layer 103 and the target surface particle a, when the second electrode 105 is formed, the second electrode 105 will not penetrate into the first electrode 102 along the gap, thereby avoiding contact between the second electrode 105 and the first electrode 102 and causing a short circuit.

[0072] Because the first portion 1041 is insulated from the first electrode 102 and the second electrode 105, even if the upper end of the first portion 1041 contacts the second electrode 105 and the lower end contacts the first electrode 102, the first electrode 102 and the second electrode 105 will not be electrically connected and short-circuited through the first portion 1041. Therefore, by filling the gap between the target particle a and the light-emitting layer 103 with the first portion 1041 of the protective layer 104, a short circuit between the first electrode 102 and the second electrode 105 can be avoided, thereby ensuring the yield of the display panel 1 and the display effect of the display device.

[0073] In summary, embodiments of the present application provide a display panel comprising a base substrate, and a first electrode, a light-emitting layer, a protective layer, and a second electrode stacked sequentially on one side of the base substrate. Due to the manufacturing process of the display panel, target particles are easily embedded in the light-emitting layer. The embedded target particles form a gap between the light-emitting layer and the light-emitting layer, connecting the light-emitting layer away from the base substrate. Therefore, a first portion of the protective layer, which is insulated from both the first and second electrodes, is filled in this gap. This prevents the formed second electrode from penetrating along the gap to the first electrode, thereby preventing a short circuit between the first and second electrodes. This ensures the yield of the display panel and the display quality of the display device.

[0074] In the embodiment of the present application, the protective layer 104 includes, in addition to the first portion 1041 filling the gap, a second portion 1042 located outside the gap. That is, the second portion 1042 can be located on the side of the target particle a away from the base substrate 101, or on the side of the light-emitting layer 103 where the target particle a is not embedded and away from the base substrate 101. Thus, electrons generated by the second electrode 105 can be transferred to the light-emitting layer 103 through the second portion 1042, and then can combine with holes generated by the first electrode 102 in the light-emitting layer 103 to emit light. The second portion 1042 of the protective layer 104 can serve as an electron transport layer.

[0075] It should be noted that, in addition to the target particles a shown in FIG1 , the light-emitting layer 103 may also contain other particles. For example, referring to FIG2 , the first type includes particles b that are not in contact with the first electrode 102 but protrude from the surface of the light-emitting layer 103 away from the substrate 101; the second type includes particles that are in contact with the first electrode 102 but do not protrude from the surface of the light-emitting layer 103 away from the substrate 101; and the third type includes particles that are not in contact with the first electrode 102 and do not protrude from the surface of the light-emitting layer 103 away from the substrate 101 (i.e., are encapsulated within the light-emitting layer 103).

[0076] For the first type of particles described above, particle b does not contact the first electrode 102. Therefore, the gap between the particle and the light-emitting layer 103 does not connect to the side of the light-emitting layer 103 close to the base substrate 101, that is, the gap does not extend to the surface of the first electrode 102. However, by filling the gap between the particle and the light-emitting layer 103 with the first portion 1041, a short circuit between the first electrode 102 and the second electrode 105 can be further avoided.

[0077] Since the second and third particles do not protrude from the surface of the light-emitting layer 103 away from the substrate 101, at the locations where these two particles are located, the particles and the light-emitting layer 103 do not have any connection with the side of the light-emitting layer 103 away from the substrate 101. Therefore, in the areas where these two particles are located, the second portion 1042 of the protective layer 104 can be provided on the side of the light-emitting layer 103 away from the substrate 101.

[0078] As a first optional implementation, the second material used to form the first portion 1041 does not co-evaporate with the first material used to form the second portion 1042. This non-co-evaporation property means that the second material cannot be evaporated in the same region where the first material was evaporated. The material of the first portion 1041 is an oxide of the first material, and the material of the second portion 1042 is the second material.

[0079] Optionally, the process of forming the protective layer 104 may include: forming a second portion 1042 of the second material on the side of the light-emitting layer 103 away from the base substrate 101 based on an evaporation process, wherein the second portion 1042 is not located in the gap between the target particle a and the light-emitting layer 103; filling the gap between the target particle a and the light-emitting layer 103 with the first material based on the evaporation process; and oxidizing the first material formed in the gap to obtain an oxide of the first material having a conductivity less than the conductive threshold (for example, the oxide of the first material is a non-conductive oxide). The oxide of the non-conductive first material can block the second electrode 105 from penetrating along the gap between the target particle a and the light-emitting layer 103, thereby preventing the first electrode 102 and the second electrode 105 from short-circuiting and forming dark spots during the lighting process of the display panel 1, and thus improving the display effect of the display device.

[0080] In order to ensure that the second material is disconnected at the edge of the target particle a during vapor deposition, thereby exposing the gap between the target particle a and the light-emitting layer 103, certain requirements must be met for the target particle a. For example, the requirements may include: the target particle a protrudes from the surface of the light-emitting layer 103 away from the base substrate 101, and the target particle a is embedded in the portion of the light-emitting layer 103, with the orthographic projection of the side of the target particle a closer to the base substrate 101 on the base substrate 101 located within the orthographic projection of the side of the target particle a farther from the base substrate 101 on the base substrate 101.

[0081] Furthermore, the continuity of the second material is poor. Therefore, since the target particle a protrudes from the surface of the light-emitting layer 103, the second material will break at the edge of the target particle a, and thus the second material will not fill the gap between the target particle a and the light-emitting layer 103. Based on the non-co-evaporation characteristics of the second material and the first material, the first material can be filled in the gap.

[0082] In addition, the second portion 1042 composed of the second material can serve as an electron injection layer for the second electrode 105. Furthermore, the second portion 1042 composed of the second material can be used to prevent damage to the light-emitting layer 103 when the second electrode 105 is formed using a sputtering process. That is, the second portion 1042 can serve as a damage-blocking layer for the light-emitting layer 103.

[0083] Optionally, the first material is magnesium (Mg), that is, the material of the first portion is magnesium oxide (MgO). The second material is lithium quinolate (LiQ), that is, the material of the second portion 1042 is LiQ.

[0084] Taking the display panel (55 inches) of the prior art and the display panel (55 inches) of the first optional implementation of the present application as examples, it can be seen from FIG3 that before the display panel is powered on (OAging, OA), the number of dark spots in the display panel of the prior art is 215, and the number of dark spots in the display panel of the first optional implementation of the present application is 119. The solution of the embodiment of the present application reduces the number of dark spots by 44.7% compared with the solution of the prior art. After the display panel is OA, the number of dark spots in the display panel of the prior art is 85, and the number of dark spots in the display panel of the first optional implementation of the present application is 73. The solution of the embodiment of the present application reduces the number of dark spots by 14.1% compared with the solution of the prior art. That is, the solution provided by the embodiment of the present application can reduce the number of dark spots and improve the display effect of the display panel. Among them, OA refers to the powering of the display panel in the atmosphere before packaging.

[0085] In addition, the transmittance of the display panel (55 inches) of the prior art and the display panel (55 inches) of the first optional implementation method of the present application is tested. Referring to Figure 4 and Table 1 below, it can be seen that the transmittance of the display panel of the prior art to light with a wavelength of 550 nanometers (nm) is 38.83%, while the transmittance of the display panel of the embodiment of the present application to light with a wavelength of 550nm is 37.30%. In other words, the transmittance of the embodiment of the present application to light with a wavelength of 550nm is reduced by 1.53% compared with the solution of the prior art. At the same time, the average transmittance of the display panel of the prior art to the visible light band is 38.8%, while the average transmittance of the display panel of the embodiment of the present application to the visible light band is 37.3%. In other words, the average transmittance of the embodiment of the present application to the visible light band is reduced by 1.50% compared with the solution of the prior art.

[0086] Therefore, the display panel solution of the embodiment of the present application has a smaller impact on transmittance than the solution of the prior art. In Figure 4, the horizontal axis is wavelength (nm) and the vertical axis is transmittance (%). Curves 1, 2, and 3 are transmittance curves for different positions tested on the display panel of the prior art, and curves 4, 5, and 6 are transmittance curves for different positions tested on the display panel of the embodiment of the present application.

[0087] Table 1

[0088] As a second optional implementation, the second portion 1042 and the first portion 1041 of the protective layer 104 can be an integral structure. For example, the material of the second portion 1042 of the protective layer 104 is the same as the material of the first portion 1041. Thus, since the first portion 1041 is insulated from the first electrode 102 and the second electrode 105, the second portion 1042 is also insulated from the first electrode 102 and the second electrode 105. That is, the impedance of the second portion 1042 is also greater than the impedance threshold (the impedance threshold may be sufficiently large). Typically, the impedance of the second electrode 105 is less than the impedance threshold, that is, the impedance of the protective layer 104 is greater than the impedance of the second electrode 105.

[0089] Since the protective layer 104 with higher impedance is located between the light-emitting layer 103 and the second electrode 105, the high-impedance protective layer 104 can first penetrate into the gap between the light-emitting layer 103 and the target particle a, thereby creating a large resistance between the second electrode 105 and the first electrode 102 and making short circuit less likely to occur.

[0090] Optionally, the impedance of the protective layer 104 being greater than the impedance threshold may mean that the surface resistance of the protective layer 104 is greater than 10 to the power of 9 (10 9 ).

[0091] In the embodiment of the present application, referring to FIG5 , it can be seen that the impedance of the prepared film layer is positively correlated with the oxygen concentration in the reaction chamber. That is, the greater the oxygen concentration in the reaction chamber, the fewer the number of oxygen vacancies in the prepared film layer, and the greater the impedance of the obtained film layer; the lower the oxygen concentration in the reaction chamber, the more the number of oxygen vacancies in the prepared film layer, and the smaller the impedance of the obtained film layer. Therefore, in order to obtain a high-impedance protective layer 104, the most direct method during preparation is to increase the oxygen concentration in the reaction chamber. Increasing the oxygen concentration in the reaction chamber can reduce the oxygen vacancies in the protective layer 104 during film formation, thereby increasing the impedance of the protective layer 104.

[0092] In the embodiment of the present application, the number of oxygen vacancies in the protective layer 104 is less than the number of oxygen vacancies in the second electrode 105. The protective layer 104 may be prepared in a first process in the reaction chamber, while the second electrode 105 may be prepared in a second process in the reaction chamber. The oxygen concentration in the reaction chamber during the first process is greater than the oxygen concentration in the reaction chamber during the second process.

[0093] Optionally, the material of the protective layer 104 and the second electrode 105 can be the same, with only different impedances. For example, the protective layer 104 and the second electrode 105 can both be made of indium zinc oxide (IZO). The impedance of the protective layer 104 is greater than that of the second electrode 105.

[0094] Of course, the material of the protective layer 104 can also be different from the material of the second electrode 105. For example, the protective layer 104 can be a material with a surface resistance greater than 10 9 Other oxide materials such as ZnOx (zinc oxide) or InOx (indium oxide) can be used. In addition, the preparation process of the protective layer 104 is not limited to the sputtering process, and other processes such as atomic layer deposition (ALD) process can also be used.

[0095] The horizontal axis of Figure 5 is the oxygen concentration (sccm), and the vertical axis is the resistivity of the film layer (ohm·cm / Ω·cm). The surface resistance of the film layer is equal to the resistivity divided by the thickness of the film layer. Figure 5 is a curve chart drawn with the thickness of the film layer as an example of 1000A (angstroms), and the solid line in Figure 5 is used to represent the experimental data, and the dotted line is used to represent the simulation curve obtained based on the experimental data. When the thickness of the film layer is converted to centimeters, it is calculated that in order to make the surface resistance of the protective layer 104 reach 10 9 , the resistivity of the protective layer 104 must reach 1.00E+04 (i.e. 1×10 4). Referring to FIG5 , it can be seen that the oxygen concentration in the reaction chamber needs to be greater than 4 sccm (volume flow rate) during the first preparation process. In addition, in order to reduce the impedance of the second electrode 105, the oxygen concentration in the reaction chamber can be less than 1 sccm during the second preparation process, for example, the oxygen concentration is about 0.5 sccm. In addition, 1.00E-04 in FIG5 represents 1×10 -4 The rest are similar and will not be elaborated on here.

[0096] With reference to Figures 6 and 7 , the protective layer 104 and the second electrode 105 can be roughly distinguished. The protective layer 104 is denser than the second electrode 105, i.e., the density of the protective layer 104 is greater than that of the second electrode 105. Optionally, the thickness of the protective layer 104 ranges from 300 Å to 600 Å, and the thickness of the second electrode 105 ranges from 300 Å to 400 Å. In other words, the total thickness of the protective layer 104 and the second electrode 105 ranges from 600 Å to 1000 Å.

[0097] Through experimental verification of the display panel 1 of the second implementation method, it was found that the improvement ratio of the dark spots of the solution is approximately 40% to 60%, that is, the display dark spots of the display panel 1 can be reduced by more than half. In addition, in order to improve the display dark spots of the display panel 1 more effectively, the preparation process of the subsequent packaging film layer of the display panel 1 can adopt a hydrogen-free chemical vapor deposition (CVD) method. This can prevent hydrogen ions from taking away oxygen in the protective layer 104, thereby preventing the increase of oxygen vacancies in the protective layer 104, and further avoid reducing the surface resistance of the protective layer 104 due to the increase of oxygen vacancies in the protective layer 104. In addition, when the display panel 1 is subsequently baked, the baking temperature can be less than 80°C (degrees Celsius), and the baking time can be less than 30 minutes (minutes). It is better to use ultraviolet (UV) type filling glue.

[0098] As a third optional implementation, the second portion 1042 and the first portion 1041 of the protective layer 104 can be an integral structure. For example, the materials of the first portion 1041 and the second portion 1042 of the protective layer 104 can be inorganic materials. Thus, the inorganic protective layer 104 is located between the light-emitting layer 103 and the second electrode 105. Therefore, the inorganic protective layer 104 can first penetrate into the gap between the light-emitting layer 103 and the target particle a to insulate the second electrode 105 from the first electrode 102, thereby preventing a short circuit between the second electrode 105 and the first electrode 102.

[0099] Furthermore, the thickness of the first portion 1041 of the protective layer 104 in a direction perpendicular to the base substrate 101 ranges from 2 nm (nanometers) to 5 nm. In other words, the protective layer 104 is neither too thick nor too thin, thereby providing insulation while facilitating the injection of electrons generated by the second electrode 105 into the light-emitting layer 103 via tunneling, thereby ensuring efficient light emission from the display panel 1.

[0100] Optionally, the inorganic material may be at least one of silicon oxide, silicon nitride, and silicon oxynitride. The inorganic material may be prepared using a CVD process. The protective layer 104 prepared using the CVD process has a strong drilling capability and can effectively fill the gap between the target particles a and the light-emitting layer 103.

[0101] As a fourth optional implementation, the second portion 1042 and the first portion 1041 of the protective layer 104 can be an integral structure. As shown in FIG8 , the protective layer 104 includes a first sublayer m1 and a second sublayer m2 stacked sequentially in a direction away from the base substrate 101. The impedance of the material of the second sublayer m2 is greater than the impedance of the material of the first sublayer m1, and greater than the impedance of the material of the second electrode 105. In this implementation, the portion of the first sublayer m1 and the second sublayer m2 that fills the gap constitutes the first portion 1041 of the protective layer 104, and the portion of the first sublayer m1 and the second sublayer m2 that is located outside the gap constitutes the second portion 1042 of the protective layer 104.

[0102] In this implementation, the protective layer 104 and the second electrode 105 can form a sandwich structure of low resistance, high resistance, and low resistance. This approach allows the first sublayer m1 of the protective layer 104, which has a low impedance, to directly contact the electron transport layer in the light-emitting layer 103, ensuring the effective transmission of electrons generated by the second electrode 105.

[0103] Optionally, the thickness of the first sublayer m1 ranges from 50 Å to 100 Å, that is, the first sublayer m1 is relatively thin and may not be able to fill the gap between the target particle a and the light-emitting layer 103. By disposing a second sublayer m2 with a larger impedance on the side of the first sublayer m1 away from the base substrate 101, the second sublayer m2 with a larger impedance fills the gap, thereby preventing a short circuit between the second electrode 105 and the first electrode 102.

[0104] In this implementation, the impedance of the second sub-layer m2 is greater than the impedance threshold. The impedance of the second sub-layer m2 is greater than the impedance threshold, which may mean that the surface resistance of the protective layer 104 is greater than 10 to the power of 9 (10 9 ).

[0105] Referring to Figure 5 , as the oxygen concentration in the reaction chamber increases, the number of oxygen vacancies in the resulting film decreases, and the resulting film impedance increases. Therefore, the most direct method for producing a high-impedance second sub-layer m2 is to increase the oxygen concentration in the reaction chamber. This increased oxygen concentration reduces the number of oxygen vacancies in the second sub-layer m2 during film formation, thereby increasing the impedance of the second sub-layer m2.

[0106] The first sublayer m1 may be obtained by performing the third preparation process in the reaction chamber, the second sublayer m2 may be obtained by performing the fourth preparation process in the reaction chamber, and the second electrode 105 may be obtained by performing the fifth preparation process in the reaction chamber. The oxygen concentration in the reaction chamber during the fourth preparation process is greater than the oxygen concentration in the reaction chamber during the third preparation process, and greater than the oxygen concentration in the reaction chamber during the fifth preparation process. As a result, the number of oxygen vacancies in the second sublayer m2 can be less than the number of oxygen vacancies in the first sublayer m1, and less than the number of oxygen vacancies in the second electrode 105.

[0107] Referring to FIG5 , it can be seen that in order to make the sheet resistance of the second sub-layer m2 reach 10 9 , the oxygen concentration in the reaction chamber during the fourth fabrication process needs to be greater than 4 sccm. In addition, to reduce the impedance of the first sublayer m1 and the second electrode 105, the oxygen concentration in the reaction chamber during the third and fifth fabrication processes can be less than 1 sccm, for example, about 0.5 sccm.

[0108] The second sublayer m2 has a greater film density than the first sublayer m1 and greater than the second electrode 105. The second sublayer m2 has a thickness ranging from 200 Å to 500 Å. The total thickness of the protective layer 104 and the second electrode 105 ranges from 800 Å to 1500 Å.

[0109] To more effectively improve the dark spots of the display panel 1, a hydrogen-free CVD process can be used to prepare the subsequent encapsulation film layer of the display panel 1. This prevents hydrogen ions from removing oxygen from the protective layer 104, thereby preventing the increase of oxygen vacancies in the protective layer 104 and thus preventing the decrease in the sheet resistance of the protective layer 104 due to the increase of oxygen vacancies in the protective layer 104.

[0110] Optionally, the material of the first sublayer m1, the material of the second sublayer m2 and the material of the second electrode 105 may be the same, with only the impedance being different. For example, the material of the first sublayer m1, the second sublayer m2 and the second electrode 105 may all be IZO.

[0111] Of course, the material of the second sub-layer m2 can also be different from the material of the second electrode 105. For example, the second sub-layer m2 can be made of a material with a sheet resistance greater than 10 9 Other oxide materials such as ZnOx or InOx etc. Moreover, the preparation process of the second sub-layer m2 is not limited to the sputtering process, and other processes such as ALD process etc. may also be used.

[0112] Since the impedance of the first sublayer m1 and the impedance of the second electrode 105 are both small, the manufacturing process can be simplified so that the material of the first sublayer m1 and the second electrode 105 can be the same, and the preparation process is also the same, for example, the material is IZO and the preparation process is sputtering.

[0113] 9 , the display panel 1 further includes a pixel defining layer 106 , which may be located on a side of the first electrode 102 away from the base substrate 101 , and the pixel defining layer 106 may have a hollow area, which may be used to expose the first electrode 102 so that the light-emitting layer 103 can contact the first electrode 102 , thereby ensuring normal display of the display panel 1 .

[0114] In summary, embodiments of the present application provide a display panel comprising a base substrate, and a first electrode, a light-emitting layer, a protective layer, and a second electrode stacked sequentially on one side of the base substrate. Due to the manufacturing process of the display panel, target particles are easily embedded in the light-emitting layer. The embedded target particles form a gap between the light-emitting layer and the light-emitting layer, connecting the light-emitting layer away from the base substrate. Therefore, a first portion of the protective layer, which is insulated from both the first and second electrodes, is filled in this gap. This prevents the formed second electrode from penetrating along the gap to the first electrode, thereby preventing a short circuit between the first and second electrodes. This ensures the yield of the display panel and the display quality of the display device.

[0115] FIG10 is a flow chart of a method for manufacturing a display panel according to an embodiment of the present application. Referring to FIG10 , the method includes:

[0116] Step S101: Obtain a base substrate.

[0117] In the embodiment of the present application, when preparing the display panel 1, a base substrate 101 may be obtained first. The base substrate 101 may be a glass substrate or a flexible substrate. The material of the flexible substrate may be polyimide (PI).

[0118] Step S102: forming a first electrode, a light-emitting layer, a protective layer and a second electrode in sequence on one side of the base substrate.

[0119] After obtaining a base substrate 101, a first electrode 102, a light-emitting layer 103, a protective layer 104, and a second electrode 105 can be sequentially formed on one side of the base substrate 101. During the preparation of the light-emitting layer 103, due to the influence of the preparation process, the target particles a are embedded on the side of the light-emitting layer 103 away from the base substrate 101, and a gap exists between the light-emitting layer 103 and the target particles a, connecting the side of the light-emitting layer 103 away from the base substrate 101.

[0120] In the embodiment of the present application, after forming the light-emitting layer 103, the protective layer 104 can be formed first, and then the second electrode 105 can be formed last. This allows the first portion 1041 of the protective layer 104, which is insulated from both the first electrode 102 and the second electrode 105, to fill the gap. For example, the impedance of the first portion 1041 is greater than an impedance threshold, which can be sufficiently large to render the first portion 1041 non-conductive and instead insulating.

[0121] Moreover, since the first portion 1041 fills the gap between the light-emitting layer 103 and the target surface particle a, when the second electrode 105 is formed, the second electrode 105 will not penetrate into the first electrode 102 along the gap, thereby avoiding contact between the second electrode 105 and the first electrode 102 and causing a short circuit.

[0122] Because the first portion 1041 is insulated from the first electrode 102 and the second electrode 105, even if the upper end of the first portion 1041 contacts the second electrode 105 and the lower end contacts the first electrode 102, the first electrode 102 and the second electrode 105 will not be electrically connected and short-circuited through the first portion 1041. Therefore, by filling the gap between the target particle a and the light-emitting layer 103 with the first portion 1041 of the protective layer 104, a short circuit between the first electrode 102 and the second electrode 105 can be avoided, thereby ensuring the yield of the display panel 1 and the display effect of the display device.

[0123] In summary, an embodiment of the present application provides a method for preparing a display panel. The display panel prepared by this method includes a base substrate, and a first electrode, a light-emitting layer, a protective layer, and a second electrode stacked in sequence on one side of the base substrate. Due to the influence of the display panel preparation process, target particles are easily embedded in the light-emitting layer. The embedded target particles form a gap between the light-emitting layer and the light-emitting layer, connecting the light-emitting layer away from the base substrate. Therefore, a first portion of the protective layer that is insulated from both the first electrode and the second electrode is filled in this gap. This can prevent the formed second electrode from penetrating along the gap to the first electrode, thereby preventing a short circuit between the first and second electrodes. This can ensure the yield of the display panel and the display effect of the display device.

[0124] FIG11 is a flow chart of another method for manufacturing a display panel according to an embodiment of the present application. Referring to FIG11 , the method includes:

[0125] Step S201: Obtain a base substrate.

[0126] In the embodiment of the present application, when preparing the display panel 1, a base substrate 101 may be obtained first. The base substrate 101 may be a glass substrate or a flexible substrate. The material of the flexible substrate may be PI.

[0127] Step S202: forming a first electrode on one side of the base substrate.

[0128] In the embodiment of the present application, a first electrode film may be formed on one side of the base substrate 101, and the first electrode film may be patterned to obtain a first electrode 102. The first electrode 102 may be an anode of a light-emitting element in the display panel 1. The patterning process includes: photoresist coating, exposure, development, etching, and photoresist removal.

[0129] Step S203: forming a light-emitting layer on a side of the first electrode away from the base substrate.

[0130] In the embodiment of the present application, referring to FIG12 , the light-emitting layer 103 is located on the side of the first electrode 102 away from the substrate 101. The preparation process of the light-emitting layer 103 includes: forming a light-emitting thin film on the side of the first electrode 102 away from the substrate 101; and patterning the light-emitting thin film to obtain the light-emitting layer 103.

[0131] Referring to FIG. 12 , due to the influence of the preparation process of the light-emitting layer 103, target particles a may be embedded in the light-emitting layer 103. These target particles a protrude from the surface of the light-emitting layer 103 away from the substrate 101. Furthermore, the target particles a are embedded in the portion of the light-emitting layer 103, with the orthographic projection of the side closer to the substrate 101 located within the orthographic projection of the side farther from the substrate 101. Furthermore, a gap exists between the target particles a and the light-emitting layer 103, connecting the side of the light-emitting layer 103 away from the substrate 101.

[0132] Step S204 : Vapor-depositing a second material on a side of the light-emitting layer away from the base substrate to form two parts of a protective layer.

[0133] In the embodiment of the present application, referring to FIG. 13 , due to the poor continuity of the second material, the prepared second portion 1042 may break at the edge of the target particle a (e.g., break at the gap between the light-emitting layer 103 and the target particle a). This prevents the second material from filling the gap between the target particle a and the light-emitting layer 103.

[0134] Optionally, the thickness of the second portion 1042 ranges from 5 nm to 10 nm.

[0135] Step S205 , forming a first material by evaporation in the gap.

[0136] In the embodiment of the present application, the first material has a non-co-evaporation property relative to the second material, which means that the first material cannot be evaporated in the region where the second material is evaporated.

[0137] 14 , based on the non-co-evaporation characteristics of the first material and the second material, the first material can be filled in the gap between the light-emitting layer 103 and the target particles a.

[0138] Step S206: oxidize the first material to obtain a first portion of the protective layer.

[0139] In the embodiment of the present application, the first material can be treated by oxidation to obtain a non-conductive oxide of the first material. The non-conductive oxide of the first material can prevent the subsequently formed second electrode 105 from penetrating through the gap between the light-emitting layer 103 and the target particles a, thereby preventing a short circuit between the first electrode 102 and the subsequently formed second electrode 105 during the lighting process of the display panel 1, thereby preventing the formation of dark spots due to a short circuit, thereby ensuring the display effect of the display device.

[0140] Step S207 : forming a second electrode on a side of the protective layer away from the base substrate.

[0141] In the embodiment of the present application, a sputtering process can be used to form a second electrode 105 on the side of the protective layer 104 away from the base substrate 101. The second electrode 105 can be a cathode of a light-emitting element in the display panel 1. The material of the second electrode 105 can be IZO.

[0142] Optionally, the display panel 1 may include a plurality of light-emitting elements, and the cathodes of the plurality of light-emitting elements may be a common film layer.

[0143] FIG15 is a flow chart of another method for manufacturing a display panel provided in an embodiment of the present application. Referring to FIG15 , the method includes:

[0144] Step S301: Obtain a base substrate.

[0145] Step S302: forming a first electrode on one side of the base substrate.

[0146] Step S303: forming a light-emitting layer on a side of the first electrode away from the base substrate.

[0147] In the embodiment of the present application, the detailed description of steps S301 to S303 can refer to the above-mentioned steps S201 to S203, and the embodiment of the present application will not be repeated here.

[0148] Step S304 : forming a first portion and a second portion of a protective layer when the oxygen concentration in the reaction chamber is a first concentration.

[0149] In the embodiment of the present application, the second portion 1042 is located outside the gap, such as on the side of the target particle a away from the base substrate 101 , and on the side of the light-emitting layer 103 where the target particle a is not embedded and away from the base substrate 101 .

[0150] All film layers in the display panel 1 can be prepared in a reaction chamber. Since the oxygen concentration in the reaction chamber increases, the number of oxygen vacancies in the prepared film layers can be reduced, and the impedance of the prepared film layers can be increased. Therefore, in order to prepare a protective layer 104 with a higher impedance, the first concentration can be increased, for example, greater than 4 sccm.

[0151] Since the protective layer 104 with higher impedance is located between the light-emitting layer 103 and the second electrode 105, the high-impedance protective layer 104 can first penetrate into the gap between the light-emitting layer 103 and the target particle a, thereby creating a large resistance between the subsequently formed second electrode 105 and the first electrode 102 and making short circuit less likely to occur.

[0152] Optionally, the material of the protection layer 104 may be IZO, ZnOx or InOx, and the preparation process thereof may be a sputter process or an ALD process.

[0153] Step S305 : forming a second electrode when the oxygen concentration in the reaction chamber is a second concentration.

[0154] In the embodiment of the present application, when preparing the second electrode 105 , the oxygen concentration in the reaction chamber may be relatively low (the second concentration is lower than the first concentration), for example, less than 1 sccm.

[0155] The second electrode 105 may be a cathode of a light-emitting element in the display panel 1. The material of the second electrode 105 may be IZO. Optionally, the second electrode 105 may be prepared by a sputtering process or an ALD process.

[0156] Optionally, the display panel 1 may include a plurality of light-emitting elements, and the cathodes of the plurality of light-emitting elements may be a common film layer.

[0157] FIG16 is a flow chart of another method for manufacturing a display panel according to an embodiment of the present application. Referring to FIG16 , the method includes:

[0158] Step S401: Obtain a base substrate.

[0159] Step S402: forming a first electrode on one side of the base substrate.

[0160] Step S403: forming a light-emitting layer on a side of the first electrode away from the base substrate.

[0161] In the embodiment of the present application, the detailed description of steps S401 to S403 can refer to the above-mentioned steps S201 to S203, and the embodiment of the present application will not be repeated here.

[0162] Step S404 : forming a first portion and a second portion of a protective layer on a side of the light-emitting layer away from the substrate by using a chemical vapor deposition process.

[0163] The second portion 1042 is located outside the gap, such as on a side of the target particle a away from the base substrate 101 , and on a side of the light emitting layer 103 where the target particle a is not embedded and away from the base substrate 101 .

[0164] The first part 1041 and the second part 1042 of the protective layer 104 are an integrated structure, and the material of the protective layer 104 is an inorganic material. The protective layer 104 of the inorganic material can penetrate into the gap between the light-emitting layer 103 and the target particle a to insulate the subsequently formed second electrode 105 and the first electrode 102, thereby avoiding a short circuit between the second electrode 105 and the first electrode 102.

[0165] The protective layer 104 is prepared by a CVD process. The protective layer 104 prepared by the CVD process has a strong drilling ability and can effectively fill the gap between the target particles a and the light-emitting layer 103 .

[0166] The first portion 1041 of the protective layer 104 has a thickness in a direction perpendicular to the base substrate 101 ranging from 2 nm to 5 nm. In other words, the protective layer 104 is neither too thick nor too thin, thereby providing insulation while facilitating the injection of electrons generated by the second electrode 105 into the light-emitting layer 103 via tunneling, thereby ensuring efficient light emission from the display panel 1.

[0167] Optionally, the inorganic material may be at least one of silicon oxide, silicon nitride and silicon oxynitride.

[0168] Step S405 : forming a second electrode on a side of the protective layer away from the base substrate.

[0169] In the embodiment of the present application, the detailed description of step S405 can refer to the above-mentioned step S207, and the embodiment of the present application will not be repeated here.

[0170] FIG17 is a flow chart of another method for manufacturing a display panel according to an embodiment of the present application. Referring to FIG17 , the method includes:

[0171] Step S501: Obtain a base substrate.

[0172] Step S502: forming a first electrode on one side of the base substrate.

[0173] Step S503: forming a light-emitting layer on a side of the first electrode away from the base substrate.

[0174] In the embodiment of the present application, the detailed description of steps S501 to S503 can refer to the above-mentioned steps S201 to S203, and the embodiment of the present application will not be repeated here.

[0175] Step S504 : forming a first sub-layer of the protective layer when the oxygen concentration in the reaction chamber is a third concentration.

[0176] In the embodiment of the present application, all film layers in the display panel 1 can be produced in a reaction chamber. Since an increase in the oxygen concentration in the reaction chamber can increase the impedance of the produced film layers, the third concentration can be made low, for example, less than 1 sccm, in order to produce the first sub-layer m1 with a lower impedance.

[0177] Since the first sub-layer m1 has a low impedance and can be in direct contact with the electron transport layer in the light-emitting layer 103 , the transmission effect of the electrons generated by the second electrode 105 can be ensured.

[0178] Optionally, the material of the first sub-layer m1 may be IZO, ZnOx or InOx, and the preparation process thereof may be a sputter process or an ALD process.

[0179] Step S505 : forming a second sub-layer of the protective layer when the oxygen concentration in the reaction chamber is a fourth concentration.

[0180] The thickness of the first sublayer m1 formed in step S504 is in the range of 50 Å to 100 Å, meaning that the first sublayer m1 is relatively thin and may not completely fill the gap between the target particle a and the light-emitting layer 103. Therefore, by disposing a second sublayer m2 with a higher impedance on the side of the first sublayer m1 away from the base substrate 101, the second sublayer m2 with a higher impedance completely fills the gap, thereby preventing a short circuit between the second electrode 105 and the first electrode 102. In this implementation, the portion of the first sublayer m1 and the second sublayer m2 that fills the gap constitutes a first portion 1041 of the protective layer 104, and the portion of the first sublayer m1 and the second sublayer m2 that lies outside the gap constitutes a second portion 1042 of the protective layer 104.

[0181] In this implementation, the impedance of the second sub-layer m2 is greater than the impedance threshold. The impedance of the second sub-layer m2 is greater than the impedance threshold, which may mean that the surface resistance of the protective layer 104 is greater than 10 to the power of 9 (10 9 ).

[0182] Referring to Figure 5 , as the oxygen concentration within the reaction chamber increases, the impedance of the resulting film increases. Therefore, the most direct method for obtaining a high-impedance second sub-layer m2 is to increase the oxygen concentration within the reaction chamber. This increased oxygen concentration reduces oxygen vacancies during deposition of the second sub-layer m2, thereby increasing its impedance.

[0183] Optionally, the second sub-layer m2 of the protective layer 104 is formed when the oxygen concentration in the reaction chamber is a fourth concentration, wherein the fourth concentration is greater than the third concentration, for example, the fourth concentration is greater than 4 sccm.

[0184] Optionally, the material of the second sub-layer m2 may be IZO, ZnOx or InOx, and the preparation process thereof may be a sputter process or an ALD process.

[0185] Step S506 : forming a second electrode when the oxygen concentration in the reaction chamber is the fifth concentration.

[0186] In the embodiment of the present application, when preparing the second electrode 105 , the oxygen concentration in the reaction chamber may be relatively low (the fifth concentration is lower than the fourth concentration), for example, less than 1 sccm.

[0187] The second electrode 105 may be a cathode of a light-emitting element in the display panel 1. The material of the second electrode 105 may be IZO. Optionally, the second electrode 105 may be prepared by a sputtering process or an ALD process.

[0188] Optionally, the display panel 1 may include a plurality of light-emitting elements, and the cathodes of the plurality of light-emitting elements may be a common film layer.

[0189] In summary, an embodiment of the present application provides a method for preparing a display panel. The display panel prepared by this method includes a base substrate, and a first electrode, a light-emitting layer, a protective layer, and a second electrode stacked in sequence on one side of the base substrate. Due to the influence of the display panel preparation process, target particles are easily embedded in the light-emitting layer. The embedded target particles form a gap between the light-emitting layer and the light-emitting layer, connecting the light-emitting layer away from the base substrate. Therefore, a first portion of the protective layer that is insulated from both the first electrode and the second electrode is filled in this gap. This can prevent the formed second electrode from penetrating along the gap to the first electrode, thereby preventing a short circuit between the first and second electrodes. This can ensure the yield of the display panel and the display effect of the display device.

[0190] FIG18 is a schematic diagram of the structure of a display device provided in an embodiment of the present application. Referring to FIG18 , the display device includes a power supply component 2 and a display panel 1 provided in the above embodiment. The power supply component 2 can be used to supply power to the display panel 1.

[0191] Optionally, the display device can be: a liquid crystal display (LCD), an organic light-emitting diode (OLED) display device, an electronic paper, a low temperature polycrystalline silicon (LTPS) display device, a low temperature polycrystalline oxide (LTPO) display device, an oxide display device, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function.

[0192] Since the display device can have substantially the same technical effects as the display panel 1 described in the previous embodiment, the technical effects of the display panel 1 will not be repeatedly described here for the purpose of brevity.

[0193] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A display panel, characterized in that: The display panel (1) comprises: a base substrate (101), and a first electrode (102), a light-emitting layer (103), a protective layer (104) and a second electrode (105) which are sequentially stacked on one side of the base substrate (101); A target particle (a) is embedded in the side of the light-emitting layer (103) away from the base substrate (101), and a gap is provided between the light-emitting layer (103) and the target particle (a) to connect the side of the light-emitting layer (103) away from the base substrate (101); The protective layer (104) comprises at least a first portion (1041) which is insulated from both the first electrode (102) and the second electrode (105), and the first portion (1041) fills the gap.

2. The display panel according to claim 1, characterized in that: The target particles (a) protrude from a surface of the light-emitting layer (103) away from the base substrate (101), and the target particles (a) are embedded in a portion of the light-emitting layer (103), with the orthographic projection of the side close to the base substrate (101) on the base substrate (101) and the orthographic projection of the side away from the base substrate (101) on the base substrate (101) being within the orthographic projection of the side away from the base substrate (101) on the base substrate (101); the protective layer (104) further comprises a second portion (1042) located outside the gap; The material of the first part (1041) is an oxide of a first material, and the material of the second part (1042) is a second material; the first material cannot be evaporated onto the second material.

3. The display panel according to claim 2, characterized in that: The first material is lithium quinolate, and the second material is magnesium.

4. The display panel according to claim 1, characterized in that: The protective layer (104) further includes a second portion (1042) located outside the gap; Wherein, the second part (1042) and the first part (1041) are an integral structure.

5. The display panel according to claim 4, characterized in that: The number of oxygen vacancies in the protective layer (104) is less than the number of oxygen vacancies in the second electrode (105).

6. The display panel according to claim 5, characterized in that: The film density of the protective layer (104) is greater than the film density of the second electrode (105).

7. The display panel according to claim 4, characterized in that: The materials of the first part (1041) and the second part (1042) are both inorganic materials.

8. The display panel according to claim 7, characterized in that: The thickness of the first portion (1041) in a direction perpendicular to the substrate (101) is in a range of 2 nanometers to 5 nanometers.

9. The display panel according to claim 7 or 8, characterized in that: The inorganic material is at least one of silicon oxide, silicon nitride and silicon oxynitride.

10. The display panel according to claim 4, characterized in that: The first part (1041) and the second part (1042) of the protective layer (104) both include a first sublayer (m1) and a second sublayer (m2) stacked in sequence in a direction away from the base substrate (101); The impedance of the second sublayer (m2) is greater than the impedance of the first sublayer (m1), and greater than the impedance of the second electrode (105).

11. The display panel according to claim 10, characterized in that: The number of oxygen vacancies in the second sublayer (m2) is less than the number of oxygen vacancies in the first sublayer (m1), and is less than the number of oxygen vacancies in the second electrode (105).

12. The display panel according to claim 10 or 11, characterized in that: The film density of the second sub-layer (m2) is greater than the film density of the second electrode (105), and greater than the film density of the first sub-layer (m1).

13. A method for preparing a display panel, characterized in that: The method comprises: Obtaining a substrate (101); A first electrode (102), a light-emitting layer (103), a protective layer (104) and a second electrode (105) are sequentially formed on one side of the base substrate (101); The target particle (a) is embedded in the side of the light-emitting layer (103) away from the base substrate (101), and a gap is provided between the light-emitting layer (103) and the target particle (a) to connect the side of the light-emitting layer (103) away from the base substrate (101); The protective layer (104) comprises at least a first portion (1041) which is insulated from both the first electrode (102) and the second electrode (105), and the first portion (1041) fills the gap.

14. The method according to claim 13, characterized in that The target particles (a) protrude from a surface of the light-emitting layer (103) away from the base substrate (101), and the target particles (a) are embedded in a portion of the light-emitting layer (103), with the orthographic projection of the side close to the base substrate (101) on the base substrate (101) and the orthographic projection of the side away from the base substrate (101) on the base substrate (101) being within the orthographic projection of the side away from the base substrate (101) on the base substrate (101); forming a protective layer (104), comprising: Vapor-depositing a second material on a side of the light-emitting layer (103) away from the base substrate (101) to form a second portion (1042) of the protective layer (104), wherein the second portion (1042) is broken at the gap; Vapor depositing a first material in the gap; Performing an oxidation treatment on the first material to obtain a first portion (1041) of the protective layer (104); The second material cannot be evaporated on the region where the first material is formed.

15. The method according to claim 13, characterized in that Forming a protective layer (104) and a second electrode (105), comprising: When the oxygen concentration in the reaction chamber is a first concentration, forming a first portion (1041) and a second portion (1042) of the protective layer (104), wherein the second portion (1042) is located outside the gap; forming the second electrode (105) when the oxygen concentration in the reaction chamber is a second concentration; Wherein, the first concentration is greater than the second concentration.

16. The method according to claim 15, characterized in that The first concentration is greater than 4 volume flow rates, and the second concentration is less than 1 volume flow rate.

17. The method according to claim 13, characterized in that Forming a protective layer (104), comprising: An inorganic material is used to form a layer on the side of the light-emitting layer (103) away from the substrate (101). The protective layer (104) comprises a first portion (1041) and a second portion (1042), wherein the second portion (1042) is located outside the gap.

18. The method according to claim 13, characterized in that Forming a protective layer (104) and a second electrode (105), comprising: forming a first sublayer (m1) when the oxygen concentration in the reaction chamber is a third concentration; When the oxygen concentration in the reaction chamber is a fourth concentration, a second sublayer (m2) is formed, the second sublayer (m2) and the portion of the first sublayer (m1) filled in the gap constitute a first portion (1041) of the protective layer (104), and the second sublayer (m2) and the portion of the first sublayer (m1) located outside the gap constitute a second portion (1042) of the protective layer (104); forming a second electrode (105) when the oxygen concentration in the reaction chamber is a fifth concentration; The fourth concentration is greater than the third concentration, and greater than the fifth concentration.

19. The method according to claim 18, characterized in that The third concentration and the fifth concentration are both less than 1 volume flow rate, and the fourth concentration is greater than 4 volume flow rates.

20. A display device, characterized in that: The display device comprises: a power supply component (2) and a display panel (1) according to any one of claims 1 to 12; Wherein, the power supply component (2) is used to supply power to the display panel (1).

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