Current detection method and device, computer equipment and storage medium

Abstract

The invention relates to a current detection method and device, computer equipment and a storage medium. The method comprises the following steps: determining an initial current of a to-be-detected conductor according to initial magnetic induction intensity obtained by detecting the to-be-detected conductor by at least one basic magnetoresistive sensor; according to the initial current, opening and closing control is carried out on at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor; and detecting the target current of the to-be-detected conductor through the magnetoresistive sensor in the open state. By adopting the method, the predicted current of the to-be-detected conductor can be detected through the basic magnetoresistive sensor and the bias magnetoresistive sensor, then the basic magnetoresistive sensor and the bias magnetoresistive sensor are subjected to opening and closing control, the target current is detected according to the adjusted current detection equipment, and the accuracy of current detection is improved.

Description

Technical Field

[0001] The present application relates to the field of computer technology, and in particular to a current detection method, device, computer equipment and storage medium. Background Art

[0002] In response to the current measurement needs that are common in power systems, magnetic sensor arrays are an effective way to replace magnetic sensors and magnetic cores, and are an effective solution to problems such as spatial interference and magnetic core saturation. With the development and cost reduction of magnetic sensors such as tunnel magnetoresistance (TMR), it has become possible to form an array of multiple magnetoresistance sensors.

[0003] In conventional technology, a ring-shaped magnetic sensor array is usually used with a coreless structure, and a plurality of magnetic sensor chips surrounding a current-carrying conductor are used to measure the magnetic induction intensity, and the current of the conductor is inverted based on the measured value and the position of the magnetoresistive sensor chip.

[0004] Although this method can detect the current of the wire, it has the problem of inaccurate detection. Summary of the invention

[0005] Based on this, it is necessary to provide a current detection method, device, computer equipment and storage medium that can accurately measure current in response to the above technical problems.

[0006] In a first aspect, the present application provides a current detection method, which is applied to a current detection device, wherein at least two magnetoresistive sensors are provided in the current detection device; the at least two magnetoresistive sensors include at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor; the method includes:

[0007] Determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0008] performing on-off control of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current;

[0009] The target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

[0010] In one embodiment, at least one base magnetoresistive sensor and at least one bias magnetoresistive sensor are controlled to be on and off according to the initial current, including:

[0011] Determine the range adjustment strategy corresponding to the current interval to which the initial current belongs;

[0012] According to the range adjustment strategy, at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor are controlled to be on and off.

[0013] In one embodiment, the current interval includes a basic current interval and a bias current interval, and the maximum value of the basic current interval is less than the minimum value of the bias current interval; determining the range adjustment strategy corresponding to the current interval to which the initial current belongs includes:

[0014] If the initial current belongs to the basic current interval, the range adjustment strategy is determined to be the basic range adjustment strategy; the basic range adjustment strategy is to only turn on the basic magnetic resistance sensor;

[0015] If the initial current belongs to the bias current interval, the range adjustment strategy is determined to be a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias magnetoresistive sensor.

[0016] In one embodiment, the bias current interval includes a first bias current interval, a second bias current interval and a third bias current interval, the maximum value of the first bias current interval is less than the minimum value of the second bias current interval, and the maximum value of the second bias current interval is less than the minimum value of the third bias current interval; if the initial current belongs to the bias current interval, then determining the range adjustment strategy as the bias range adjustment strategy includes:

[0017] If the initial current belongs to the first bias current interval, the range adjustment strategy is determined to be the first bias range adjustment strategy; the magnetic induction intensity detection direction of the first bias magnetoresistive sensor is, based on the direction of the position of the first bias magnetoresistive sensor pointing to the center of gravity of the current detection device, the direction offset by the first preset angle clockwise along the installation plane of the first bias magnetoresistive sensor;

[0018] If the initial current belongs to the second bias current interval, the range adjustment strategy is determined to be the second bias range adjustment strategy; the second bias range adjustment strategy is to only turn on the second bias magnetoresistive sensor; the magnetic induction intensity detection direction of the second bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device pointed to by the position of the sensor itself, the direction offset by the second preset angle along the installation plane of the second bias magnetoresistive sensor clockwise;

[0019] If the initial current belongs to the third bias current interval, the range adjustment strategy is determined to be the third bias range adjustment strategy; the third bias range adjustment strategy is to only turn on the third bias magnetoresistive sensor; the magnetic induction intensity detection direction of the third bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device pointed to by its own position, the direction after being offset by a third preset angle clockwise along the installation plane of the third bias magnetoresistive sensor;

[0020] Among them, the first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle; the magnetic induction intensity detection direction of the basic magnetoresistance sensor is different from the magnetic induction intensity detection direction of the biased magnetoresistance sensor; the magnetic induction intensity detection direction of the basic magnetoresistance sensor is perpendicular to its own position and points to the direction of the center of gravity of the current detection device.

[0021] In one embodiment, determining the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured comprises:

[0022] Obtaining an initial magnetic induction intensity of the conductor to be measured detected by at least one basic magnetoresistive sensor;

[0023] Determining the offset distance between the conductor to be measured and the center of gravity of the current detection device according to each initial magnetic induction intensity;

[0024] The initial current of the conductor to be measured is determined according to the offset distance, the straight-line distance and the preset magnetic permeability coefficient; the straight-line distance is the distance between any basic magnetic resistance sensor and the center of gravity of the current detection device.

[0025] In one embodiment, detecting a target current of a conductor to be measured by a magnetoresistive sensor in an on state includes:

[0026] Detecting the target magnetic induction intensity of the conductor to be measured by a magnetoresistive sensor in an on state;

[0027] The target current of the conductor to be measured is determined according to the offset distance, the straight-line distance, the preset magnetic permeability coefficient and the target magnetic induction intensity.

[0028] In a second aspect, the present application also provides a current detection device, comprising:

[0029] An initial determination module, used to determine an initial current of the conductor to be measured according to an initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0030] A sensor control module, used for controlling the on / off of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to an initial current;

[0031] The current detection module is used to detect the target current of the conductor to be measured through the magnetoresistive sensor in the turned-on state.

[0032] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0033] Determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0034] performing on-off control of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current;

[0035] The target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

[0036] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0037] Determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0038] performing on-off control of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current;

[0039] The target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

[0040] In a fifth aspect, the present application further provides a computer program product, including a computer program, which implements the following steps when executed by a processor:

[0041] Determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0042] performing on-off control of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current;

[0043] The target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

[0044] The above-mentioned current detection method, device, computer equipment and storage medium determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured; according to the initial current, at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor are controlled to be turned on and off; and the target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state. This embodiment detects the predicted current of the conductor to be measured by the basic magnetoresistive sensor and the bias magnetoresistive sensor, and then controls the basic magnetoresistive sensor and the bias magnetoresistive sensor to be turned on and off, and detects the target current according to the adjusted current detection device, thereby improving the accuracy of current detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0046] FIG1 is an application environment diagram of a current detection method provided by this embodiment;

[0047] FIG2 is a schematic diagram of a flow chart of a first current detection method provided in this embodiment;

[0048] FIG3 is a basic principle diagram of the Biot-Savart law provided by this embodiment;

[0049] FIG4 is a structural block diagram of a current detection device provided in this embodiment;

[0050] FIG5 is an internal structure diagram of a first computer device provided in this embodiment;

[0051] FIG6 is a diagram showing the internal structure of a second type of computer device provided in this embodiment. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0053] The current detection method provided in the embodiment of the present application can be applied in the application environment as shown in FIG1. ​​Among them, at least two magnetoresistive sensors are provided in the current detection device; the at least two magnetoresistive sensors include at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor. The current detection device determines the initial current of the conductor to be measured based on the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured; according to the initial current, at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor are controlled to be turned on and off; and the target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

[0054] Among them, the basic magnetoresistance sensor and the biased magnetoresistance sensor have different magnetic induction intensity detection directions, and the basic magnetoresistance sensor and the biased magnetoresistance sensor can be distributed in the six corners of the hexagon; the basic magnetoresistance sensor in the figure includes a basic magnetoresistance sensor T1, a basic magnetoresistance sensor T2 and a basic magnetoresistance sensor T3; the biased sensor includes a biased magnetoresistance sensor T4, a biased magnetoresistance sensor T5 and a biased magnetoresistance sensor T6; the offset preset first angle β1 corresponding to the biased magnetoresistance sensor T4 is 30°; the offset preset second angle β2 corresponding to the biased magnetoresistance sensor T5 is 60°; the offset preset third angle β3 corresponding to the biased magnetoresistance sensor T6 is 90°; point O represents the center of gravity of the current detection device; point S represents the position point of the conductor to be measured; B1 represents the magnetic induction intensity of the basic magnetoresistance sensor T1; B2 represents the magnetic induction intensity of the basic magnetoresistance sensor T2; B3 represents the basic magnetoresistance The magnetic induction intensity of sensor T3; B4 represents the magnetic induction intensity of biased magnetoresistance sensor T4; B5 represents the magnetic induction intensity of biased magnetoresistance sensor T5; B6 represents the magnetic induction intensity of biased magnetoresistance sensor T6; R represents the straight-line distance between any magnetoresistance sensor and the center of gravity of the current detection device; r1 represents the straight-line distance between the basic magnetoresistance sensor T1 and the conductor to be measured; r2 represents the straight-line distance between the basic magnetoresistance sensor T2 and the conductor to be measured; r3 represents the straight-line distance between the basic magnetoresistance sensor T3 and the conductor to be measured; r4 represents the straight-line distance between the biased magnetoresistance sensor T4 and the center of gravity of the current detection device; r5 represents the straight-line distance between the biased magnetoresistance sensor T5 and the center of gravity of the current detection device; r6 represents the straight-line distance between the biased magnetoresistance sensor T6 and the center of gravity of the current detection device; x represents the offset distance between the conductor to be measured and the center of gravity of the current detection device.

[0055] In an exemplary embodiment, as shown in FIG2 , a current detection method is provided, which is described by taking the method applied to the current detection device in FIG1 as an example, and includes the following steps 201 to 203. Among them:

[0056] Step 201 : determining an initial current of the conductor to be measured according to an initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured.

[0057] The magnetoresistive sensor may be composed of a ring array magnetoresistive sensor chip, the basic measurement principle of which is based on the Biot-Savart law, and the magnetoresistive sensor may be based on a tunnel magnetoresistance (TMR) sensor chip. The magnetoresistive sensor may include a basic magnetoresistive sensor and a bias magnetoresistive sensor.

[0058] Among them, the basic magnetoresistance sensor can include three basic magnetoresistance sensors, and the three basic magnetoresistance sensors are distributed in an isosceles triangle. The magnetoresistance strength detection direction of each basic magnetoresistance sensor is perpendicular to the direction of the center of gravity of the current detection device at its own position, that is, perpendicular to the direction of the line vector connecting the basic magnetoresistance sensor and the center of gravity of the isosceles triangle.

[0059] Among them, the bias sensor can include three bias sensors, the basic magnetoresistance sensor and the bias magnetoresistance sensor have different magnetoresistance strength detection directions, and the magnetoresistance strength detection direction of the bias magnetoresistance sensor is, based on the direction of the center of gravity of the current detection device pointing to its own position, the direction after being offset by a preset angle clockwise along the installation plane of at least one bias magnetoresistance sensor.

[0060] Specifically, the current detection device controls each basic magnetoresistive sensor to obtain the initial magnetic induction intensity of the conductor to be measured, and determines the offset distance x of the conductor to be measured according to the initial magnetoresistive intensity, magnetic permeability, preset initial point, preset threshold and preset number of iterations; determines the initial current of the conductor to be measured according to the initial magnetoresistive intensity, straight-line distance R and offset distance x.

[0061] Step 202: performing on-off control on at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current.

[0062] In some embodiments, at least one basic magnetoresistance sensor and at least one bias magnetoresistance sensor are controlled to open and close according to the initial current, including: determining a range adjustment strategy corresponding to the current interval to which the initial current belongs; and according to the range adjustment strategy, controlling the opening and closing of at least one basic magnetoresistance sensor and at least one bias magnetoresistance sensor.

[0063] Specifically, determine the current interval to which the initial current belongs, determine the range adjustment strategy corresponding to the current interval, determine the basic magnetoresistance sensor or the bias magnetoresistance sensor to be turned on according to the range adjustment strategy, and perform on-off control of at least one basic magnetoresistance sensor and at least one bias magnetoresistance sensor.

[0064] Step 203: Detect the target current of the conductor to be measured by using the magnetoresistive sensor in the turned-on state.

[0065] Specifically, according to the target current, the target current is input into a pre-trained current determination model to obtain the target current of the conductor to be measured.

[0066] The above-mentioned current detection method determines the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured; according to the initial current, at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor are controlled to be turned on and off; and the target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state. This embodiment detects the predicted current of the conductor to be measured by the basic magnetoresistive sensor and the bias magnetoresistive sensor, and then controls the basic magnetoresistive sensor and the bias magnetoresistive sensor to be turned on and off, and detects the target current according to the adjusted current detection device, thereby improving the accuracy of current detection.

[0067] In some embodiments, the current interval includes a basic current interval and a bias current interval, and the maximum value of the basic current interval is less than the minimum value of the bias current interval; determining the range adjustment strategy corresponding to the current interval to which the initial current belongs, including: if the initial current belongs to the basic current interval, then determining the range adjustment strategy as the basic range adjustment strategy; the basic range adjustment strategy is to only turn on the basic magnetoresistance sensor; if the initial current belongs to the bias current interval, then determining the range adjustment strategy as the bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias magnetoresistance sensor.

[0068] In some embodiments, the bias current interval includes a first bias current interval, a second bias current interval and a third bias current interval, the maximum value of the first bias current interval is less than the minimum value of the second bias current interval, and the maximum value of the second bias current interval is less than the minimum value of the third bias current interval; if the initial current belongs to the bias current interval, the range adjustment strategy is determined to be the bias range adjustment strategy, including: if the initial current belongs to the first bias current interval, the range adjustment strategy is determined to be the first bias range adjustment strategy; the magnetic induction intensity detection direction of the first bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device pointing to its own position, along the direction of the installation plane of the first bias magnetoresistive sensor clockwise offset by a first preset angle; if the initial current belongs to the second bias current interval , then the range adjustment strategy is determined to be the second bias range adjustment strategy; the second bias range adjustment strategy is to only turn on the second bias magnetoresistive sensor; the magnetic induction intensity detection direction of the second bias magnetoresistive sensor is, on the basis of the direction of the center of gravity of the current detection device pointed to by its own position, the direction after the second preset angle is offset clockwise along the installation plane of the second bias magnetoresistive sensor; if the initial current belongs to the third bias current interval, then the range adjustment strategy is determined to be the third bias range adjustment strategy; the third bias range adjustment strategy is to only turn on the third bias magnetoresistive sensor; the magnetic induction intensity detection direction of the third bias magnetoresistive sensor is, on the basis of the direction of the center of gravity of the current detection device pointed to by its own position, the direction after the third preset angle is offset clockwise along the installation plane of the third bias magnetoresistive sensor;

[0069] Wherein, the first preset angle is less than the second preset angle, and the second preset angle is less than the preset angle; the magnetic induction intensity detection direction of the basic magnetoresistive sensor is different from that of the bias magnetoresistive sensor; the magnetic induction intensity detection direction of the basic magnetoresistive sensor is the direction perpendicular to the position where it is located and pointing to the center of gravity of the current detection device.

[0070] Exemplarily, when the target current U ≤ U1 (1 kA), the system operates in the normal mode at this time, and only the basic magnetoresistive sensors (T1, T2, T3) are used for measurement; at this time, the measurement accuracy and sensitivity of the current detection device are the highest, which is suitable for accurate measurement in the small current range; its measurement range can be 1 A to 1 kA. When U1 (1 kA) < U ≤ U2 (2 kA), the system stops the operation of the basic magnetoresistive sensors (T1, T2, and T3) and switches to the bias sensor T4 for operation; at this time, the current detection device expands the current measurement range; its measurement range can be 1 kA to 2 kA. When U2 (2 kA) < U ≤ U3 (5 kA), the system stops the operation of the bias sensor T4 and switches to the bias sensor T5 for operation; at this time, the current detection device further increases the measurement range and is suitable for the measurement of larger currents; its measurement range can be 2 kA to 5 kA. When (5 kA) < U ≤ U4 (10 kA), the system stops the operation of the bias sensor T5 and switches to the bias sensor T6 for operation; at this time, the current detection device reaches the maximum measurement range; its measurement range can be 5 kA to 10 kA. When U > U4, the measurement of the current detection device reaches saturation.

[0071] In this embodiment, smooth transition measures need to be taken during the mode switching process, which can avoid sudden jumps in the measurement results and ensure the continuity and stability of the measurement.

[0072] In some embodiments, determining the initial current of the conductor under test according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor for the conductor under test includes: obtaining the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor for the conductor under test; determining the offset distance between the conductor under test and the center of gravity of the current detection device according to each initial magnetic induction intensity; and determining the initial current of the conductor under test according to the offset distance, the straight-line distance, and the preset magnetic permeability.

[0073] Wherein, the straight-line distance is the distance between any basic magnetoresistive sensor and the center of gravity of the current detection device.

[0074] Specifically, the current detection device controls each basic magnetoresistive sensor to obtain the initial magnetic induction intensity of the conductor under test, and determines the offset distance x of the conductor under test according to the initial magnetic induction intensity, the preset magnetic permeability, the preset starting point, the preset threshold, and the preset number of iterations; and determines the initial current of the conductor under test according to the initial magnetic induction intensity, the straight-line distance R, and the offset distance x.

[0075] Exemplarily, in this embodiment, the initial magnetic induction intensity B1, the initial magnetic induction intensity B2, and the initial magnetic induction intensity B3 can be input into a preset distance parameter determination model to obtain the offset distance x of the conductor to be measured, and then the initial current of the conductor to be measured is determined by the following formula (1-1).

[0076] (1-1)

[0077] Among them, B1 is the initial magnetic induction intensity of the basic magnetoresistive sensor T1; R is the straight-line distance between the basic magnetoresistive sensor T1 and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; M is the preset magnetic permeability coefficient; I is the initial current; θ1 is the angle between the line connecting the basic magnetoresistive sensor T1 and the center of gravity O and the offset distance x.

[0078] Exemplarily, the distance parameter determination model can be constructed based on Newton's method, where y=(x, cosθ1), F=[f1, f2] T , the initial point y(0)=(x(0),cosθ1(0))=(0,1), the threshold Δ=1e-4, and the number of iterations is 10, as shown in the following formulas (1-2) to (1-5).

[0079] (1-2)

[0080] (1-3)

[0081] (1-4)

[0082] (1-5)

[0083] Wherein, n is the number of iterations; B1 is the initial magnetic induction intensity of the basic magnetoresistance sensor T1; B2 is the initial magnetic induction intensity of the basic magnetoresistance sensor T2; B3 is the initial magnetic induction intensity of the basic magnetoresistance sensor T3; R is the straight-line distance between the basic magnetoresistance sensor T1 and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; θ1 is the angle between the line connecting the basic magnetoresistance sensor T1 and the center of gravity O and the offset distance x.

[0084] It should be noted that, in this embodiment, the straight-line distance r1 between the basic magnetoresistance sensor T1 and the conductor to be measured, the straight-line distance r2 between the basic magnetoresistance sensor T2 and the conductor to be measured, the straight-line distance r3 between the basic magnetoresistance sensor T3 and the conductor to be measured, the angle α1, the angle α2 and the angle α3 can also be determined according to the determined straight-line distance R, the offset distance x between the center of gravity of the conductor to be measured and the current detection device, and the angle θ1, through the following formulas (1-6) to (1-11). In this embodiment, the angle θ2 and the angle θ3 can also be determined according to the angle θ1, θ1+θ2=120°, θ3-θ1=120°.

[0085] (1-6)

[0086] (1-7)

[0087] (1-8)

[0088] (1-9)

[0089] (1-10)

[0090] (1-11)

[0091] Wherein, R is the straight-line distance between any basic magnetoresistance sensor and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; the angle α1 is the angle between the straight-line distance r1 and the basic magnetoresistance sensor T1 and the center of gravity O; the angle α2 is the angle between the straight-line distance r2 and the line connecting the basic magnetoresistance sensor T2 and the center of gravity O; the angle α3 is the angle between the straight-line distance r3 and the basic magnetoresistance sensor T3 and the center of gravity O; θ1 is the angle between the line connecting the basic magnetoresistance sensor T1 and the center of gravity O and the offset distance x; θ2 is the angle between the line connecting the basic magnetoresistance sensor T2 and the center of gravity O and the offset distance x; θ3 is the angle between the line connecting the basic magnetoresistance sensor T3 and the center of gravity O and the offset distance x.

[0092] It should be noted that the preset magnetic permeability coefficient in this embodiment can be determined by the following formula (1-12).

[0093] (1-12)

[0094] Wherein, M is the preset magnetic permeability coefficient; μ0 is the vacuum magnetic permeability coefficient. For example, the basic principle diagram of Biot-Savart law is shown in FIG3. is the measured current vector; is the unit vector in the direction of the sensitive axis of the magnetoresistive sensor, that is, | |=1; is the vector between the magnetoresistive sensor and the conductor to be measured.

[0095] This embodiment obtains the initial magnetic induction intensity of the conductor to be measured obtained by at least one basic magnetoresistive sensor; determines the offset distance between the conductor to be measured and the center of gravity of the current detection device according to each initial magnetic induction intensity; and can more accurately determine the initial current of the conductor to be measured according to the offset distance, the straight-line distance and the preset magnetic permeability coefficient.

[0096] In some embodiments, detecting a target current of a conductor to be measured by using a magnetoresistive sensor in an on state includes: detecting a target magnetic induction intensity of the conductor to be measured by using a magnetoresistive sensor in an on state; and determining the target current of the conductor to be measured according to an offset distance, a straight-line distance, a preset magnetic permeability coefficient and a target magnetic induction intensity.

[0097] Specifically, a magnetoresistive sensor in an on state is obtained to detect a target magnetic induction intensity of the conductor to be measured, and a target current of the conductor to be measured is determined according to the target magnetic induction intensity, a preset magnetic permeability coefficient, an offset distance and a straight-line distance.

[0098] Exemplarily, if the target magnetic induction intensity is determined by the basic magnetoresistive sensor, the target voltage of the conductor to be measured is determined by the above formula (1-1). If the target magnetic induction intensity is determined by the biased magnetoresistive sensor, the target voltage of the conductor to be measured is determined by the following formula (1-13).

[0099] (1-13)

[0100] Wherein, I is the target current; M is the preset magnetic permeability coefficient; B4 is the target magnetic induction intensity of the basic magnetoresistance sensor T4; B5 is the target magnetic induction intensity of the basic magnetoresistance sensor T5; B6 is the target magnetic induction intensity of the basic magnetoresistance sensor T6; the angle α4 is the angle between the straight-line distance r4 and the basic magnetoresistance sensor T4 and the center of gravity O; the angle α5 is the angle between the straight-line distance r5 and the line connecting the basic magnetoresistance sensor T5 and the center of gravity O; the angle α6 is the angle between the straight-line distance r6 and the basic magnetoresistance sensor T6 and the center of gravity O; β1 is the preset first angle of offset corresponding to the biased magnetoresistance sensor T4 (β1=30°); β2 is the preset second angle of offset corresponding to the biased magnetoresistance sensor T5 (β2=60°); β3 is the preset third angle of offset corresponding to the biased magnetoresistance sensor T6 (β3=90°).

[0101] It should be noted that, in this embodiment, the straight-line distance r4 between the basic magnetoresistance sensor T4 and the conductor to be measured, the straight-line distance r5 between the basic magnetoresistance sensor T5 and the conductor to be measured, the straight-line distance r6 between the basic magnetoresistance sensor T6 and the conductor to be measured, the angle α4, the angle α5 and the angle α6 can also be determined according to the determined straight-line distance R, the offset distance x between the conductor to be measured and the center of gravity of the current detection device, the angle θ1 and the angle θ2, through the following formulas (1-14) to (1-19). In this embodiment, the angle θ4, the angle θ5 and the angle θ6 can also be determined according to the angle θ1 and the angle θ2, θ4=θ1+60°, θ5=θ2+60°, θ6=θ2-60°.

[0102] (1-14)

[0103] (1-15)

[0104] (1-16)

[0105] (1-17)

[0106] (1-18)

[0107] (1-19)

[0108] Among them, R is the straight-line distance between any basic magnetoresistance sensor and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; the angle α4 is the angle between the straight-line distance r4 and the basic magnetoresistance sensor T4 and the center of gravity O; the angle α5 is the angle between the straight-line distance r5 and the line connecting the basic magnetoresistance sensor T5 and the center of gravity O; the angle α6 is the angle between the straight-line distance r6 and the basic magnetoresistance sensor T6 and the center of gravity O; θ1 is the angle between the line connecting the basic magnetoresistance sensor T1 and the center of gravity O and the offset distance x; θ2 is the angle between the line connecting the basic magnetoresistance sensor T2 and the center of gravity O and the offset distance x.

[0109] This embodiment detects the target magnetic induction intensity of the conductor to be measured by using the magnetoresistive sensor in the turned-on state; according to the offset distance, the straight-line distance, the preset magnetic permeability coefficient and the target magnetic induction intensity, the target current of the conductor to be measured can be determined more accurately.

[0110] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0111] Based on the same inventive concept, the embodiment of the present application also provides a current detection device for implementing the current detection method involved above. The implementation solution provided by the device to solve the problem is similar to the implementation solution recorded in the above method, so the specific limitations in one or more current detection device embodiments provided below can refer to the limitations of the current detection method above, and will not be repeated here.

[0112] In an exemplary embodiment, as shown in FIG4 , a current detection device is provided, comprising: an initial determination module 10, a sensor control module 11 and a current detection module 12, wherein:

[0113] An initial determination module 10 is used to determine an initial current of the conductor to be measured according to an initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured;

[0114] The sensor control module 11 is used to control the on / off of at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the initial current;

[0115] The current detection module 12 is used to detect the target current of the conductor to be measured by using a magnetoresistive sensor in an on state.

[0116] In one embodiment, the sensor control module 11 in FIG. 4 is also used to determine a range adjustment strategy corresponding to the current interval to which the initial current belongs; and to perform on-off control on at least one basic magnetoresistive sensor and at least one bias magnetoresistive sensor according to the range adjustment strategy.

[0117] In one embodiment, the sensor control module 11 in Figure 4 is also used to determine that the range adjustment strategy is a basic range adjustment strategy if the initial current belongs to the basic current interval; the basic range adjustment strategy is to only turn on the basic magnetoresistance sensor; if the initial current belongs to the bias current interval, then the range adjustment strategy is determined to be a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias magnetoresistance sensor.

[0118] In one embodiment, the sensor control module 11 in Figure 4 is also used to determine that the range adjustment strategy is the first bias range adjustment strategy if the initial current belongs to the first bias current interval; the magnetic induction intensity detection direction of the first bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device at its own position, and the direction after the first preset angle is offset clockwise along the installation plane of the first bias magnetoresistive sensor; if the initial current belongs to the second bias current interval, the range adjustment strategy is determined to be the second bias range adjustment strategy; the second bias range adjustment strategy is to only turn on the second bias magnetoresistive sensor; the magnetic induction intensity detection direction of the second bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device at its own position, and the direction after the first preset angle is offset clockwise along the installation plane of the second bias magnetoresistive sensor. the direction after the needle is offset by the second preset angle; if the initial current belongs to the third bias current interval, the range adjustment strategy is determined to be the third bias range adjustment strategy; the third bias range adjustment strategy is to only turn on the third bias magnetoresistive sensor; the magnetic induction intensity detection direction of the third bias magnetoresistive sensor is, on the basis of the direction of the center of gravity of the current detection device pointing to its own position, the direction after the third preset angle is offset clockwise along the installation plane of the third bias magnetoresistive sensor; wherein the first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle; the magnetic induction intensity detection direction of the basic magnetoresistive sensor is different from the magnetic induction intensity detection direction of the bias magnetoresistive sensor; the magnetic induction intensity detection direction of the basic magnetoresistive sensor is perpendicular to the direction of the center of gravity of the current detection device pointing to its own position.

[0119] In one embodiment, the initial determination module 10 in Figure 4 is also used to obtain the initial magnetic induction intensity obtained by at least one basic magnetoresistance sensor on the conductor to be measured; determine the offset distance between the conductor to be measured and the center of gravity of the current detection device according to each initial magnetic induction intensity; determine the initial current of the conductor to be measured according to the offset distance, the straight-line distance and the preset magnetic permeability coefficient; the straight-line distance is the distance between any basic magnetoresistance sensor and the center of gravity of the current detection device.

[0120] In one embodiment, the current detection module 12 in FIG. 4 is also used to detect the target magnetic induction intensity of the conductor to be measured through the magnetoresistive sensor in the turned-on state; and determine the target current of the conductor to be measured according to the offset distance, the straight-line distance, the preset magnetic permeability coefficient and the target magnetic induction intensity.

[0121] Each module in the above-mentioned current detection device can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0122] In an exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be shown in FIG5. The computer device includes a processor, a memory, an input / output interface (Input / Output, referred to as I / O) and a communication interface. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface is connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store data. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a current detection method is implemented.

[0123] In an exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be shown in FIG6. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, the memory, and the input / output interface are connected via a system bus, and the communication interface, the display unit, and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner may be implemented through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a current detection method is implemented. The display unit of the computer device is used to form a visually visible picture, which may be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0124] Those skilled in the art will understand that the structures shown in FIGS. 5 and 6 are merely block diagrams of partial structures related to the scheme of the present application, and do not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device may include more or fewer components than those shown in the figures, or combine certain components, or have a different arrangement of components.

[0125] In one embodiment, a computer device is further provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above method embodiments when executing the computer program.

[0126] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.

[0127] In one embodiment, a computer program product is provided, including a computer program, which implements the steps in the above method embodiments when executed by a processor.

[0128] It should be noted that the data involved in this application (including but not limited to data used for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0129] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0130] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0131] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A current detection method, characterized in that: Applied to a current detection device, wherein the current detection device is provided with at least two magnetoresistive sensors; The at least two magnetoresistive sensors include at least one base magnetoresistive sensor and at least one bias magnetoresistive sensor; the method includes: Determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured; According to the initial current, the at least one basic magnetoresistive sensor and the at least one bias magnetoresistive sensor are controlled to open and close; The target current of the conductor to be measured is detected by the magnetoresistive sensor in the turned-on state.

2. The method according to claim 1, characterized in that The step of controlling the at least one basic magnetoresistive sensor and the at least one bias magnetoresistive sensor to open and close according to the initial current comprises: Determine a range adjustment strategy corresponding to the current interval to which the initial current belongs; According to the range adjustment strategy, the at least one basic magnetoresistive sensor and the at least one bias magnetoresistive sensor are controlled to be on and off.

3. The method according to claim 2, characterized in that The current interval includes a basic current interval and a bias current interval, and the maximum value of the basic current interval is smaller than the minimum value of the bias current interval; The determining of the range adjustment strategy corresponding to the current interval to which the initial current belongs includes: If the initial current belongs to the basic current interval, the range adjustment strategy is determined to be a basic range adjustment strategy; the basic range adjustment strategy is to only turn on the basic magnetoresistive sensor; If the initial current belongs to the bias current interval, the range adjustment strategy is determined to be a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias magnetoresistive sensor.

4. The method according to claim 3, characterized in that The bias current interval includes a first bias current interval, a second bias current interval and a third bias current interval, the maximum value of the first bias current interval is smaller than the minimum value of the second bias current interval, and the maximum value of the second bias current interval is smaller than the minimum value of the third bias current interval; If the initial current belongs to the bias current interval, determining the range adjustment strategy as the bias range adjustment strategy includes: If the initial current belongs to the first bias current interval, the range adjustment strategy is determined to be the first bias range adjustment strategy; the magnetic induction intensity detection direction of the first bias magnetoresistive sensor is, based on the direction of the position of the first bias magnetoresistive sensor pointing to the center of gravity of the current detection device, the direction offset by the first preset angle clockwise along the installation plane of the first bias magnetoresistive sensor; If the initial current belongs to the second bias current interval, the range adjustment strategy is determined to be the second bias range adjustment strategy; the second bias range adjustment strategy is to only turn on the second bias magnetoresistive sensor; the magnetic induction intensity detection direction of the second bias magnetoresistive sensor is, based on the direction of the center of gravity of the current detection device pointed to by the position of the second bias magnetoresistive sensor, the direction after being offset by a second preset angle clockwise along the installation plane of the second bias magnetoresistive sensor; If the initial current belongs to the third bias current interval, the range adjustment strategy is determined to be the third bias range adjustment strategy; the third bias range adjustment strategy is to only turn on the third bias magnetoresistive sensor; the magnetic induction intensity detection direction of the third bias magnetoresistive sensor is, based on the direction of the position of the third bias magnetoresistive sensor pointing to the center of gravity of the current detection device, the direction after being offset clockwise by a third preset angle along the installation plane of the third bias magnetoresistive sensor; Among them, the first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle; the magnetic induction intensity detection direction of the basic magnetoresistance sensor is different from the magnetic induction intensity detection direction of the biased magnetoresistance sensor; the magnetic induction intensity detection direction of the basic magnetoresistance sensor is a direction perpendicular to its own position pointing to the center of gravity of the current detection device.

5. The method according to claim 1, characterized in that The method of determining the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured comprises: Obtaining an initial magnetic induction intensity of a conductor to be measured detected by at least one basic magnetoresistive sensor; Determining the offset distance between the conductor to be measured and the center of gravity of the current detection device according to each of the initial magnetic induction intensities; The initial current of the conductor to be measured is determined according to the offset distance, the straight-line distance and the preset magnetic permeability coefficient; the straight-line distance is the distance between any of the basic magnetic resistance sensors and the center of gravity of the current detection device.

6. The method according to any one of claims 1 to 5, characterized in that The method of detecting the target current of the conductor to be measured by the magnetoresistive sensor in the turned-on state comprises: Detecting the target magnetic induction intensity of the conductor to be measured by a magnetoresistive sensor in an on state; The target current of the conductor to be measured is determined according to the offset distance, the straight-line distance, the preset magnetic permeability coefficient and the target magnetic induction intensity.

7. A current detection device, characterized in that: The device comprises: An initial determination module, used to determine the initial current of the conductor to be measured according to the initial magnetic induction intensity detected by at least one basic magnetoresistive sensor on the conductor to be measured; A sensor control module, configured to perform on-off control of the at least one basic magnetoresistive sensor and the at least one bias magnetoresistive sensor according to the initial current; The current detection module is used to detect the target current of the conductor to be measured through the magnetoresistive sensor in the turned-on state.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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