Detection chip, manufacturing method thereof and laser radar

Abstract

The invention discloses a detection chip and a manufacturing method thereof, and a laser radar, and the detection chip comprises a detector crystal grain which is provided with a plurality of pixels; the light shielding microstructure is located on the detector crystal grain and protrudes out of the surface of the detector crystal grain, the light shielding microstructure exposes the light sensing area of the pixel, and the light shielding microstructure is configured to prevent light within a preset angle range from entering the light sensing area of the pixel. The shading microstructure has a certain height and protrudes out of the surface of the detector crystal grain, so that the shading microstructure can effectively prevent stray light within a preset angle range from entering the photosensitive area of the pixel, can inhibit reflection of positions outside the photosensitive area, and can effectively inhibit light crosstalk.

Description

Technical Field

[0001] The present invention relates to the field of laser radar, and in particular to a detection chip and a manufacturing method thereof, and a laser radar. Background Art

[0002] The detection chip is the core component of the LiDAR detection module and is also a key factor in determining the performance of the LiDAR. In order to continuously improve the distance measurement capability and detection accuracy, LiDAR has continuously increased its requirements for the photon detection efficiency (PDE) of the detection chip, especially for the detection chip using the single photon avalanche diode (SPAD).

[0003] The detection chip using SPAD is in Geiger mode, and each incident photon will trigger an avalanche effect, with extremely high sensitivity, and can even detect a single photon. However, while the PDE is improved, the tolerance of the detection chip to stray light is significantly reduced, and stray light can cause optical crosstalk problems, resulting in reduced image quality.

[0004] Therefore, there is an urgent need for LiDAR to suppress stray light. Summary of the invention

[0005] The problem solved by the present invention is how to suppress optical crosstalk.

[0006] In order to solve the above problems, the present invention provides a detection chip, comprising:

[0007] A detector grain, wherein the detector grain has a plurality of pixels; a light-shielding microstructure, wherein the light-shielding microstructure is located on the detector grain and protrudes from the surface of the detector grain, wherein the light-shielding microstructure exposes a photosensitive area of ​​the pixel, and wherein the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

[0008] Optionally, the detector crystal grain includes: a substrate, wherein the photosensitive area of ​​the pixel is located in the substrate; and the light-shielding microstructure protrudes from the surface of the substrate.

[0009] Optionally, the detector crystal grain further includes: a non-photosensitive area; and the light-shielding microstructure is located on the non-photosensitive area.

[0010] Optionally, the plurality of pixels of the detector die are suitable for forming a pixel array; the non-photosensitive region is located between photosensitive regions of adjacent pixels in the detector die, and the non-photosensitive region also surrounds the pixel array.

[0011] Optionally, the height of the light-shielding microstructure protruding from the surface of the detector grain is not less than 1 / 2 of the characteristic size of the photosensitive area of ​​the pixel.

[0012] Optionally, the material of the light-shielding microstructure includes photoresist.

[0013] Optionally, it also includes: a light-transmitting material, wherein the light-transmitting material is at least filled on the photosensitive area.

[0014] Optionally, the thickness of the light-transmitting material is not less than the height of the light-shielding microstructure protruding from the surface of the detector grain.

[0015] Optionally, the detection chip has a light-transmitting window, and light is incident on the detector grain from the light-transmitting window; and the light-transmitting material is located in the light-transmitting window.

[0016] Optionally, it also includes: a filling piece, which is formed in the light-transmitting window; the light-transmitting material is filled between the light-shielding microstructure and the filling piece, and the light-transmitting material is also filled between the detector grains exposed by the light-shielding microstructure and the filling piece.

[0017] Optionally, one end of the light-shielding microstructure facing the filling piece is connected to the filling piece.

[0018] Optionally, the light-shielding microstructure includes: a shielding member; a width of the shielding member at one end close to the filling member is greater than a width of the shielding member at one end away from the filling member.

[0019] Optionally, a distance between one end of the light-shielding microstructure facing the detector grain and the detector grain is smaller than a characteristic size of a photosensitive area of ​​the pixel.

[0020] Optionally, it also includes: a packaging carrier; the detector chip is fixed on the packaging carrier and electrically connected to the packaging carrier.

[0021] Optionally, it further includes: a plastic package body, which covers at least part of the surface of the detector grain and at least part of the surface of the packaging carrier; and the light-transmitting window of the detection chip passes through the plastic package body.

[0022] Optionally, a side of the light-shielding microstructure facing the detector grain is connected to the detector grain.

[0023] Optionally, the light-shielding microstructure includes: a shielding member; a width of the shielding member at one end close to the detector grain is greater than a width of the shielding member at one end away from the detector grain.

[0024] Accordingly, the present invention further provides a laser radar, comprising:

[0025] An emission module, wherein the emission module is suitable for generating detection light; a transmission module, wherein the transmission module transmits the detection light to form scanning light; the scanning light is reflected by a target to form echo light; a detection module, wherein the emission module is suitable for receiving the echo light, and the detection module comprises: a detection chip, wherein the detection chip comprises: a detector grain, wherein the detector grain has a plurality of pixels; a light-shielding microstructure, wherein the light-shielding microstructure is located on the detector grain and protrudes from the surface of the detector grain, wherein the light-shielding microstructure exposes a photosensitive area of ​​the pixel, and wherein the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

[0026] In addition, the present invention also provides a method for manufacturing a detection chip, comprising:

[0027] A substrate is provided; and a light-shielding microstructure is formed on the substrate according to the photosensitive area of ​​the pixel in the detector grain, wherein the light-shielding microstructure protrudes from the surface of the substrate, the light-shielding microstructure exposes the photosensitive area of ​​the pixel, and the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

[0028] Optionally, in the step of providing a substrate, the substrate includes: a detector grain, wherein the detector grain has a plurality of pixels; in the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure is formed on the detector grain, wherein the light-shielding microstructure protrudes from the surface of the detector grain.

[0029] Optionally, in the step of providing a substrate, the substrate is a filling piece; in the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure is formed on the surface of the filling piece, and the light-shielding microstructure protrudes from the surface of the filling piece; the manufacturing method also includes: bonding the filling piece formed with the light-shielding microstructure to the detector grain, with the surface of the filling piece formed with the light-shielding microstructure facing the detector grain.

[0030] Optionally, it also includes: fixing the detector chip on a packaging carrier and electrically connecting it to the packaging carrier; forming a plastic package body, which covers at least part of the surface of the detector chip and at least part of the surface of the packaging carrier; and the light-transmitting window of the detection chip passes through the plastic package body.

[0031] Optionally, the method further includes: before forming the plastic package body, forming a light-transmitting material, wherein the light-transmitting material is at least filled on the photosensitive area.

[0032] Optionally, the step of forming a plastic package includes: forming a pre-plastic package, the pre-plastic package covers the detector grain and a portion of the surface of the packaging carrier, the pre-plastic package also extending to a position corresponding to a light-transmitting window of the detection chip; forming a light-transmitting window penetrating the pre-plastic package to form the plastic package, the light-transmitting material being exposed at the bottom of the light-transmitting window.

[0033] Optionally, the method further includes: forming a filling piece in the light-transmitting window.

[0034] Optionally, the step of forming a light-shielding microstructure on the substrate includes: forming a light-shielding material on the substrate; and removing part of the light-shielding material to form the light-shielding microstructure according to a photosensitive area of ​​a pixel in a detector grain.

[0035] Optionally, in the step of forming a light-shielding material on the substrate, the light-shielding material is formed on the substrate by a spin coating process; in the step of removing a portion of the light-shielding material to form the light-shielding microstructure, a portion of the light-shielding material is removed by at least one of exposure, development and etching.

[0036] Optionally, it also includes: forming detector grains; the step of forming the detector grains includes: providing a substrate; forming a photosensitive area in the substrate; in the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure protrudes from the surface of the substrate.

[0037] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0038] In the technical solution of the present invention, the light-shielding microstructure located on the detector crystal grain protrudes from the surface of the detector crystal grain, and the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel. The light-shielding microstructure has a certain height and protrudes from the surface of the detector crystal grain, so the light-shielding microstructure can effectively block stray light within a preset angle range from being incident on the photosensitive area of ​​the pixel, and can suppress the reflection of the light beam in the non-photosensitive area, thereby effectively suppressing light crosstalk. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without creative work. The drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation to the present invention. In the drawings:

[0040] Figure 1It is a schematic flow chart of an embodiment of a method for manufacturing a detection chip of the present invention;

[0041] Figures 2 to 8 yes Figure 1 A schematic diagram of the structure of the intermediate structures in each step of the embodiment of the detection chip manufacturing method shown;

[0042] Fig. 9 It is a structural schematic diagram of another embodiment of the method for manufacturing a detection chip of the present invention;

[0043] Fig.10 It is a schematic flow chart of another embodiment of the method for manufacturing the detection chip of the present invention;

[0044] Figure 11 to Figure 12 yes Fig.10 A schematic diagram of the structure of the intermediate structures in each step of the embodiment of the detection chip manufacturing method shown;

[0045] Fig.13 It is a structural schematic diagram of another embodiment of the method for manufacturing the detection chip of the present invention;

[0046] Fig.14 It is a schematic diagram of a top view of the intermediate structure in another embodiment of the method for manufacturing the detection chip of the present invention. DETAILED DESCRIPTION

[0047] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0048] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0049] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0051] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0052] As can be seen from the background technology, the detection chip of the laser radar in the prior art has the problem of optical crosstalk.

[0053] In order to solve the technical problem, the present invention provides a detection chip, a manufacturing method thereof and a laser radar. A light-shielding microstructure protruding from the surface of the detector grain is provided on the detector grain. The light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel. The light-shielding microstructure has a certain height and protrudes from the surface of the detector grain. Therefore, the light-shielding microstructure can effectively block stray light within a preset angle range from being incident on the photosensitive area of ​​the pixel, and can suppress the reflection of the light beam in the non-photosensitive area, thereby effectively suppressing light crosstalk.

[0054] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0055] refer to Figure 1 , which shows a schematic flow chart of an embodiment of a method for manufacturing a detection chip of the present invention. Figures 2 to 8 , showing Figure 1 The schematic diagram of the structure of each step of the detection chip manufacturing method embodiment is shown.

[0056] like Figure 1 As shown, the manufacturing method of the detection chip includes: firstly performing step S11 to provide a substrate.

[0057] The substrate is used to provide a process foundation and mechanical support for subsequent process steps.

[0058] Combined with reference Figure 2 In some embodiments, step S11 is performed to provide a substrate, wherein the substrate includes a detector grain 110 , and the detector grain 110 has a plurality of pixels 111 ; therefore, the manufacturing method further includes forming the detector grain 110 .

[0059] Specific as Figure 3 As shown, a plurality of pixels 111 are arranged in an array to form a pixel array (not shown in the figure). Each pixel 111 has a photosensitive area 112. Figure 3 yes Figure 2 Schematic diagram of the structure viewed from above in direction A.

[0060] The photosensitive area 113 of the pixel 111 is suitable for absorbing photons and generating electrons to achieve photoelectric conversion.

[0061] like Figure 2 and Figure 3 As shown, in some embodiments of the present invention, the step of forming the detector grain 110 includes: providing a substrate 114; forming a photosensitive region 112 in the substrate 114. In some specific embodiments, the photosensitive region 112 can be formed in the substrate 114 by ion implantation and epitaxial growth.

[0062] Specific as Figure 2 and Figure 3 In some specific embodiments shown, the pixel 111 includes at least one photosensitive element. Specifically, the photosensitive element can be a SPAD, a multi-pixel photon counter (MPPCs), a silicon photomultiplier (SiPMs), an avalanche photodiode (APD), etc.

[0063] In some specific embodiments, the photosensitive areas 112 of the plurality of pixels 111 are discretely distributed in a plane parallel to the surface of the detector chip 110 ; the detector chip 110 also includes a non-photosensitive area 113 , and the non-photosensitive area 113 is located between the photosensitive areas 112 of adjacent pixels 111 in the detector chip 110 .

[0064] It should be noted that if Figure 2 and Figure 3 As shown, the plurality of pixels 111 distributed in an array are also suitable for forming a pixel array, and the non-photosensitive area 113 also surrounds the pixel array.

[0065] Continue to refer Figure 1 After providing the substrate, step S12 is performed to form a light-shielding microstructure 120 on the substrate according to the photosensitive area 112 of the pixel 111 in the detector grain 110, wherein the light-shielding microstructure 120 protrudes from the surface of the substrate, and the light-shielding microstructure 120 exposes the photosensitive area 112 of the pixel 111, and the light-shielding microstructure 120 is configured to prevent light within a preset angle range from being incident on the photosensitive area 112 of the pixel 111.

[0066] Combined with reference Figure 4 and Figure 5 ,in Figure 4 is with Figure 2 The corresponding cross-sectional structural diagram, Figure 5 is with Figure 3 The corresponding top view structural diagram.

[0067] In some embodiments, the substrate includes: a detector grain 110 ; executing step S12 , in the step of forming a light-shielding microstructure 120 on the substrate, the light-shielding microstructure 120 is formed on the detector grain 110 , and the light-shielding microstructure 120 protrudes from the surface of the detector grain 110 .

[0068] It should be noted that the light-shielding microstructure 120 is located on the side of the detector chip 110 where light is incident. That is, the direction in which the light-shielding microstructure 120 points to the detector chip 110 is consistent with the direction in which light is incident on the photosensitive area 112 of the pixel 111 .

[0069] In some embodiments, the detector die 110 has a substrate 114 and a photosensitive region 112 located in the substrate 114, that is, the photosensitive region 112 is located within the surface of the substrate 114; therefore, step S12 is performed, in the step of forming a light-shielding microstructure 120 on the substrate, the light-shielding microstructure 120 protrudes from the surface of the substrate 114. Specifically, in the direction opposite to the direction in which the light is incident on the photosensitive region 112, the light-shielding microstructure 120 at least extends a certain distance from the surface of the substrate 114.

[0070] like Figure 4 and Figure 5 As shown, in a plane parallel to the surface of the detector die 110, the light shielding microstructure 120 exposes the photosensitive area 112 of the pixel 111. Figure 4 As shown, the light-shielding microstructure 120 has an opening 123 that penetrates along the thickness direction, and the bottom of the opening 123 exposes the photosensitive area 112 .

[0071] The detector die 110 further includes the non-photosensitive area 113; the light-shielding microstructure 120 is located on the non-photosensitive area 113; therefore, in a plane parallel to the surface of the detector die 110, the projection of the light-shielding microstructure 120 is located within the projection range of the non-photosensitive area 113; in some embodiments, the width of the light-shielding microstructure 120 does not exceed the width of the non-photosensitive area 113. The width of the non-photosensitive area 113 refers to the size of the non-photosensitive area 112 between adjacent photosensitive areas 112 in a plane parallel to the surface of the detector die 110; correspondingly, the width of the light-shielding microstructure 120 refers to the size of the light-shielding microstructure 121 between adjacent photosensitive areas 112 in a plane parallel to the surface of the detector die 110.

[0072] Specifically, the non-photosensitive area 113 is located between the photosensitive areas 112 of adjacent pixels 111 in the detector grain 110 and surrounds the pixel array; therefore, in a plane parallel to the surface of the detector grain 110, the light-shielding microstructure 120 is also located between adjacent pixels 111 and surrounds the pixel array; multiple pixels 111 of the detector grain 110 are surrounded one by one by the light-shielding microstructure 120, thereby effectively suppressing light crosstalk between the photosensitive areas 112 of adjacent pixels 111, and also effectively suppressing reflection of the non-photosensitive area 113.

[0073] The light shielding microstructure 120 is used to block light within a preset angle range from being incident on the photosensitive area 112 of the pixel 111 .

[0074] In some specific embodiments, the height H of the light shielding microstructure 120 protruding from the surface of the detector die 110 is not less than 1 / 2 of the characteristic size P of the photosensitive area 112 of the pixel. The characteristic size refers to the minimum size of the photosensitive area of ​​the pixel. Figures 1 to 6 In some specific embodiments shown, the photosensitive area 112 of the pixel 111 is a square, and the characteristic size P is the side length of the square. In other embodiments of the present invention, the photosensitive area of ​​the pixel may also be other shapes, such as a rectangle, a circle, a hexagon, etc.

[0075] The height H of the light-shielding microstructure 120 is related to the preset angle range of the light blocked by the light-shielding microstructure 120. Figure 6 In some of the embodiments shown, the height H of the light-shielding microstructure 120 protruding from the surface of the detector grain 110 is not less than 1 / 2 of the characteristic size P of the photosensitive area 112 of the pixel. Therefore, the light-shielding microstructure 120 can suppress light with an incident angle θ greater than 45° from entering the photosensitive area 112 of the pixel, thereby shielding light reflected from the inside of the laser radar or incident light from other pixels, that is, shielding large-angle stray light, so that the light received by the photosensitive area of ​​each pixel is basically only the echo light corresponding to the pixel, effectively suppressing light crosstalk, thereby improving the quality of the point cloud image. Figure 6 Shows Figures 1 to 5 The cross-sectional structure diagram of a single pixel in the embodiment of the detection chip manufacturing method is shown.

[0076] In some embodiments of the present invention, executing step S12, the step of forming a light-shielding microstructure 120 on the substrate includes: forming a light-shielding material on the substrate; and removing part of the light-shielding material to form the light-shielding microstructure 120 according to the photosensitive area 112 of the pixel 111 in the detector grain 110.

[0077] In some embodiments, the material of the light-shielding microstructure 120 includes photoresist. Therefore, the light-shielding material can be photoresist. Specifically, the light-shielding microstructure 120 is configured to block light within a preset angle range by absorption; the light-shielding material is dark photoresist, that is, the material of the light-shielding microstructure 120 is dark photoresist to block light by absorption.

[0078] The light-shielding microstructure 120 protrudes from the surface of the detector grain 110, that is, the light-shielding microstructure has a certain height; and the light-shielding microstructure 120 blocks light by absorption, so each surface of the light-shielding microstructure 120 can absorb light, so the light-shielding microstructure 120 protruding from the surface of the detector grain 110 has a larger light-absorbing area, which can significantly improve the light-absorbing effect.

[0079] In some specific embodiments, in the step of forming the light shielding material on the substrate, the light shielding material is formed on the substrate by a spin coating process. Figure 4 and Figure 5 As shown, the light shielding material is formed on the detector die 110 by a spin coating process.

[0080] In some embodiments of the present invention, in the step of removing part of the light-shielding material to form the light-shielding microstructure 120, part of the light-shielding material is removed by at least one of exposure, development and etching. Specifically, in some embodiments, the light-shielding material is exposed according to the photosensitive area 112 of the pixel 111 in the detector grain 110; the exposed light-shielding material is developed to remove the light-shielding material on the photosensitive area 112, forming an opening 123 with the photosensitive area 112 exposed at the bottom, thereby forming the light-shielding microstructure 120.

[0081] In other embodiments, after the light-shielding material is formed, the light-shielding material can also be etched according to the photosensitive area of ​​the pixel in the detector grain to remove the light-shielding material above the photosensitive area, forming an opening at the bottom to expose the photosensitive area, and retaining the light-shielding material on the non-photosensitive area, thereby forming the light-shielding microstructure.

[0082] like Figure 1 and Figure 7 In some of the embodiments shown, the manufacturing method further includes: after forming the light-shielding microstructure 120 , executing step S13 to form a light-transmitting material 130 , wherein the light-transmitting material 130 is at least filled on the photosensitive area 112 .

[0083] The light-transmitting material 130 is suitable for protecting the light-shielding microstructure 120 to prevent the light-shielding microstructure 120 from being damaged during the process. Specifically, the light-transmitting material 130 at least fills the opening 123 (such as Figure 4 and Figure 5 shown).

[0084] In some embodiments of the present invention, the thickness of the light-transmitting material 130 is not less than the height of the light-shielding microstructure 120 protruding from the surface of the detector grain 110 , that is, in the direction perpendicular to the surface of the detector grain 110 , the size of the light-transmitting material 130 is greater than or equal to the distance between the surface of the light-shielding microstructure 120 away from the side of the detector grain 110 and the surface of the detector grain 110 .

[0085] In addition, if Figure 7In some of the embodiments shown, the thickness of the light-transmitting material 130 is greater than the height of the light-shielding microstructure 120 protruding from the surface of the detector grain 110, and the light-transmitting material 130 also extends onto the light-shielding microstructure 120, that is, the light-transmitting material 130 also extends to the side of the light-shielding microstructure 120 away from the detector grain 110.

[0086] It should be noted that, in other embodiments of the present invention, the thickness of the light-transmitting material may also be equal to the height of the light-shielding microstructure protruding from the surface of the detector grain, that is, the light-transmitting material exposes the surface of the light-shielding microstructure away from the detector grain.

[0087] Continue to refer Figure 1 , combined with reference Figure 7 In some embodiments of the present invention, the manufacturing method further includes: executing step S14 to fix the detector die 110 on the packaging carrier 160 and electrically connect the detector die 110 to the packaging carrier 160 .

[0088] The package carrier 160 is used to fix the detector die 110 and realize the connection between the detector die 110 and an external circuit. Specifically, the package carrier 160 includes but is not limited to a lead frame, a laminate substrate, a ceramic substrate, a carrier tape and other components.

[0089] Among them, in the step of fixing the detector chip 110 on the packaging carrier 160, the detector chip 110 can be mounted on the packaging carrier 160 through a die bonding process; in the step of electrically connecting the detector chip 110 and the packaging carrier 160, the methods of electrically connecting the detector chip 110 and the packaging carrier 160 include but are not limited to wire bonding, flip-chip bonding, wafer-level bonding, etc.

[0090] like Figure 1 In some of the embodiments shown, the manufacturing method further includes: executing step S15 to form a plastic package 170 , wherein the plastic package 170 covers at least a portion of the surface of the detector die 110 and at least a portion of the surface of the packaging carrier 160 .

[0091] The plastic package 170 is made of a non-light-transmitting material. Figure 7 As shown, the detection chip has a light-transmitting window 140 penetrating the plastic package 170 . The light-transmitting window 140 exposes the pixels 111 of the detector die 110 , and light is incident on the photosensitive surface of the detector die 110 from the light-transmitting window 140 .

[0092] The plastic package 170 is used to fix and protect the detector die 110 and the package carrier 160. Figure 7In some of the embodiments shown, the detector die 110 and the package carrier 160 can be electrically connected via wire bonding; therefore, the plastic package 170 can also protect the formed bonding wires.

[0093] Therefore, the steps of forming the plastic package 170 include: forming a pre-molded body, the pre-molded body covering the detector grain 110 and part of the surface of the packaging carrier 160, and the pre-molded body also extending to the position corresponding to the light-transmitting window 140 of the detection chip; forming a light-transmitting window 140 penetrating the pre-molded body to form the plastic package 170, and the light-transmitting material 130 is exposed at the bottom of the light-transmitting window 140.

[0094] Specifically, the main components of the plastic encapsulation body 170 include, but are not limited to, epoxy resin and various additives (for example, curing agent, modifier, release agent, dye, flame retardant, etc.). Therefore, in the step of forming the pre-plastic encapsulation body, the plastic encapsulation material in a molten state is used for filling, and the plastic encapsulation material is cooled and solidified to form a pre-plastic encapsulation body that encapsulates the detector grain 110 and the packaging carrier 160; after the pre-plastic encapsulation body is formed, the pre-plastic encapsulation body is etched to form the light-transmitting window 140 at the position corresponding to the light-shielding microstructure 120.

[0095] It should be noted that Figure 7 In some of the embodiments shown, the pre-molded body is etched to form a light-transmitting window 140 to form the plastic body 170. In some other embodiments of the present invention, a mold of a preset shape can also be used to fill the plastic material. During the filling of the plastic material, the plastic material is prevented from covering the pixel position of the detector grain, or the plastic material is prevented from covering the transparent material, so as to directly form the plastic body.

[0096] In some embodiments, the light-sensitive area 112 exposed by the light-shielding microstructure 120 is further filled with the light-transmitting material 130 , and the light-transmitting window 140 exposes the light-shielding microstructure 120 ; therefore, the light-transmitting material 130 is located in the light-transmitting window 140 .

[0097] Specific as Figure 7 As shown, the light-transmitting material 130 is filled on the photosensitive area 112 and extends to the light-shielding microstructure 120; therefore, the light-transmitting material 130 on the light-shielding microstructure 120 is exposed at the bottom of the light-transmitting window 140; therefore, the light-transmitting material 130 can not only protect the light-shielding microstructure 120 and the detector grain 110 below it during the formation of the pre-plastic package, but also play a protective role in the process of etching to form the light-transmitting window 140, thereby expanding the process window and reducing the process difficulty.

[0098] It should be noted that in order to prevent the light-shielding microstructure 120 from being damaged during the formation of the plastic package 170 , the light-transmitting material 130 is formed before the plastic package 170 , that is, the light-transmitting material 130 is formed before the plastic package 170 is formed.

[0099] It should also be noted that Figure 1 In some of the embodiments shown, after performing step S13 to form the light-transmitting material 130 , performing step S15 , and before forming the plastic package 170 , performing step S14 to fix the detector die 110 on the package carrier 160 .

[0100] In other embodiments of the present invention, the step of fixing the detector die to the packaging carrier can also be performed before forming the light-transmitting material. For example, in some embodiments, after forming the light-shielding microstructure on the substrate and before forming the light-transmitting material, the detector die is fixed to the packaging carrier; in other embodiments, the step of fixing the detector die to the packaging carrier can even be performed before forming the light-shielding microstructure on the substrate. The present invention does not limit the execution order of the step of fixing the detector die to the packaging carrier.

[0101] Continue to refer Figure 1 , combined with reference Figure 7 The manufacturing method further includes: forming a filling member 150 in the light-transmitting window 140 .

[0102] The filler 150 is made of a light-transmitting material and has good light transmittance to the working wavelength of the laser radar. Figure 7 In some of the embodiments shown, the filler 150 is made of glass.

[0103] The light successively passes through the filler 150 and the light-transmitting material 130. Among the light that passes through the filler 150 and the light-transmitting material 130, the light within the preset angle range is projected onto the light-shielding microstructure 120, and is blocked by the light-shielding microstructure 120 and cannot be incident on the photosensitive area 112 of the pixel 111. In some specific embodiments, the light within the preset angle range is projected onto the light-shielding microstructure 120, and is absorbed by the light-shielding microstructure 120, and does not form crosstalk.

[0104] In some embodiments, the light-transmitting material 130 is filled on the photosensitive area 112 and extends onto the light-shielding microstructure 120, and the light-transmitting material 130 is exposed at the bottom of the light-transmitting window 140; therefore, the light-transmitting material 130 is filled between the light-shielding microstructure 120 and the filling piece 150, and the light-transmitting material 130 is also filled between the detector grain 110 exposed by the light-shielding microstructure 120 and the filling piece 150.

[0105] It should be noted that, in other embodiments of the present invention, the thickness of the light-transmitting material is equal to the height of the light-shielding microstructure protruding from the surface of the detector grain, and the light-transmitting material exposes the surface of the light-shielding microstructure away from the detector grain; the light-transmitting material is only filled between the detector grain exposed by the light-shielding microstructure and the filling member.

[0106] It should also be noted that Figure 7 In some of the embodiments shown, the material of the filler is glass. In some other embodiments, the material of the filler may also be the light-transmitting material, that is, the filler may also be made of the same material as the light-transmitting material.

[0107] In addition, if Figures 1 to 8 In some embodiments shown, the substrate includes a detector grain 110; that is, in the step of forming a light-shielding microstructure 120 on the substrate, the light-shielding microstructure 120 is formed on the detector grain 110; the light-shielding microstructure 120 is connected to the detector grain 110 on a side facing the detector grain 110; and Figure 8 In some of the embodiments shown, a side of the light-shielding microstructure 120 facing the filler 150 is separated from the filler 150 .

[0108] It should be noted that Figures 1 to 8 In some of the embodiments shown, the shielding members 121 of the light-shielding microstructure 120 surround each pixel 111 respectively, and the shielding members 121 surrounding different pixels 111 are integrally connected.

[0109] like Figure 8 As shown, the light shielding microstructure 120 includes a plurality of shielding members 121. Specifically, in a plane perpendicular to the surface of the detector crystal grain 110, the cross-sectional shape of the shielding member 121 is a long strip, one end of which contacts the surface of the non-photosensitive area of ​​the detector crystal grain 110, and the other end extends in a direction away from the detector crystal grain 110.

[0110] It should be noted that Figure 8 In some of the embodiments shown, the cross section of the shielding member 121 is in the shape of a long strip in a plane perpendicular to the surface of the detector die 110. In other embodiments of the present invention, the shielding member may also be in other shapes.

[0111] like Fig. 9 In some embodiments shown, the width of the shielding member 221 of the light shielding microstructure 220 close to the detector die 210 is greater than the width of the shielding member 221 away from the detector die 210. The width refers to the dimension in a plane parallel to the surface of the detector die 210.

[0112] In some specific embodiments, the width of the shielding member 221 gradually decreases in a direction away from the detector die 210. Fig. 9 As shown, in a plane perpendicular to the surface of the detector die 210 , the cross-section of the shielding member 221 is trapezoidal.

[0113] It should be noted that, in some of the above embodiments, in the step of providing a substrate, the substrate includes: a detector grain 110, that is, Figures 1 to 9 In some of the embodiments shown, the light shielding microstructure 120 is directly formed on the detector die 110. In other embodiments of the present invention, the substrate may not be the detector die 110.

[0114] refer to Fig.10 , shows a schematic flow chart of another embodiment of the method for manufacturing a detection chip of the present invention. Figure 11 to Figure 12 , showing Fig.10 The schematic diagram of the structure of each step of the detection chip manufacturing method embodiment is shown.

[0115] The present invention will not repeat the same points as the above-mentioned embodiment. Figures 10 to 12 In some of the illustrated embodiments, the substrate is a filler 350 .

[0116] refer to Fig.10 , combined with reference Fig.11 In some embodiments, in the step of providing a substrate in step S21, the substrate is a filler 150. Specifically, the filler 150 is a hard transparent material to ensure the mechanical support of the substrate. In some embodiments, the filler 150 is glass or organic glass.

[0117] The substrate is a filling member 150 ; therefore, step S22 is performed, in which the light-shielding microstructure 320 is formed on the surface of the filling member 350 in the step of forming the light-shielding microstructure 320 on the substrate, and the light-shielding microstructure 320 protrudes from the surface of the filling member 350 .

[0118] Specifically, executing step S22, the step of forming the light-shielding microstructure 320 on the substrate includes: forming the light-shielding microstructure 320; and pasting the light-shielding microstructure 320 to a surface of the filling member by glue or adhesive film (not shown in the figure).

[0119] Among them, in the step of forming the light-shielding microstructure 320, a pattern is designed according to the distribution of the photosensitive area 312 of the pixel 311 in the detector grain 310 to form the light-shielding microstructure 320; and in the step of pasting the light-shielding microstructure 320 to a surface of the filling member by glue or adhesive film, the pattern of the light-shielding microstructure 320 is designed according to the distribution of the photosensitive area 312 of the pixel 311 in the detector grain 310, and the fitting position of the light-shielding microstructure 320 is determined, so that the light-shielding microstructure 320 corresponds to the position of the non-photosensitive area 313 of the detector grain 310, and the opening 323 corresponds to the photosensitive area 312 of the pixel 311 in the detector grain 310.

[0120] In other embodiments of the present invention, the light-shielding microstructure may also be formed directly on the surface of the filler. In some specific embodiments, the step of forming the light-shielding microstructure on the substrate includes: forming a light-shielding material on one surface of the substrate; and removing part of the light-shielding material to form the light-shielding microstructure according to the position distribution of the photosensitive area of ​​the pixel in the detector grain.

[0121] Among them, in the step of removing part of the light-shielding material to form the light-shielding microstructure according to the photosensitive area of ​​the pixel in the detector grain, a pattern is designed according to the position distribution of the photosensitive area of ​​the pixel in the detector grain, and the light-shielding material at the position corresponding to the photosensitive area of ​​the pixel is removed to form an opening, thereby forming the light-shielding microstructure; therefore, the light-shielding microstructure corresponds to the position of the non-photosensitive area of ​​the detector grain.

[0122] Continue to refer Fig.10 , combined with reference Fig.12 The manufacturing method further includes: executing step S23, bonding the filling member 350 formed with the light-shielding microstructure 320 to the detector grain 310, and the surface of the filling member 350 formed with the light-shielding microstructure 320 faces the detector grain 310.

[0123] Specific as Fig.11 As shown, before the filling piece 350 formed with the light-shielding microstructure 320 is bonded to the detector grain 310, a transparent material 330 is formed on the light-shielding microstructure 320; the bonding of the filling piece 350 and the detector grain 310 is achieved through the transparent material 330, that is, the surface of the transparent material 330 on the light-shielding microstructure 320 is in contact with the surface of the detector grain 310.

[0124] Fig.10 In some embodiments shown in the figure, the substrate is the filler 350, that is, the light shielding microstructure 320 is directly formed on the filler 350. Fig.12As shown, one end of the light-shielding microstructure 320 facing the filling member 350 is connected to the filling member 350 .

[0125] In some embodiments of the present invention, the light-shielding microstructure 320 is separated from the detector die 310 , that is, the end of the light-shielding microstructure 320 facing the detector die 310 is not in contact with the surface of the detector die 310 .

[0126] like Fig.12 In some of the illustrated embodiments, a distance W between one end of the light-shielding microstructure 320 facing the detector die 310 and the detector die 310 is smaller than a characteristic size P of the photosensitive region 312 of the pixel 311 . The smaller the distance W between one end of the light-shielding microstructure 320 facing the detector grain 310 and the detector grain 310, the larger the minimum incident angle of the light that can be incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312. Therefore, limiting the distance W between one end of the light-shielding microstructure 320 facing the detector grain 310 and the detector grain 310 can effectively limit the minimum incident angle of the light that is incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312. The larger the minimum incident angle of the light that is incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312, the less the light that can be incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312, thereby achieving the purpose of reducing stray light interference.

[0127] In some embodiments, a transparent material 330 is further formed on the light shielding microstructure 320. Figure 11 to Figure 12 As shown, the transparent material 330 also extends to the surface of the light-shielding microstructure 320 on one side away from the filling member 350 , so the transparent material 330 is filled between the light-shielding microstructure 320 and the detector die 310 .

[0128] like Fig.12 As shown, in the plane perpendicular to the detector crystal grain 310 , the cross-sectional shape of the shielding member 321 of the light-shielding microstructure 320 is in the shape of an elongated strip, one end of which contacts the surface of the non-photosensitive area of ​​the detector crystal grain 310 , and the other end extends in a direction away from the detector crystal grain 310 .

[0129] It should be noted that Fig.12In some of the embodiments shown, the cross-section of the shielding member 321 is in the shape of an elongated strip, that is, the width of the shielding member 321 of the light-shielding microstructure 320 close to the detector die 310 is equal to or close to the width of the shielding member 321 away from the detector die 310. In other embodiments of the present invention, the shielding member may also be in other shapes.

[0130] like Fig.13 In some of the embodiments shown, the width of the shielding member 421 of the light-shielding microstructure 420 at one end close to the detector die 410 is greater than the width of the shielding member 421 at one end away from the detector die 410 .

[0131] In some specific embodiments, the width of the shielding member 421 gradually decreases along the direction toward the detector die 210. Fig.13 As shown, in a plane perpendicular to the surface of the detector die 410 , the cross-section of the shielding member 421 is trapezoidal.

[0132] It should be noted that, in the above-mentioned embodiment, in the step of providing a substrate in step S11, in the detector die 110, the pixel unit 111 includes a photosensitive element, such as Figure 4 and Figure 5 In other embodiments of the present invention, Fig.14 As shown, in the step of providing a substrate, in the detector grain 510, the pixel unit 511 may also include a plurality of photosensitive elements, each of which has a photosensitive area 512; the photosensitive areas in the photosensitive elements of adjacent pixel units 511 have the non-photosensitive area 513 between them, and the photosensitive areas 512 of adjacent photosensitive elements of the same pixel unit 511 also have the non-photosensitive area 513 between them.

[0133] Fig.14 In some embodiments shown, in the step of forming the light-shielding microstructure 520 on the substrate, the light-shielding microstructure 520 is formed on the non-photosensitive area 513 between adjacent pixel units 511; the light-shielding microstructure 520 exposes multiple photosensitive areas in the same pixel unit 511 and the non-photosensitive area 513 between the photosensitive areas 512 of adjacent photosensitive elements in the pixel unit. Therefore, the light-shielding microstructure 520 is only located on the non-photosensitive area 513 between adjacent pixel units 511, and the light-shielding microstructure 520 is not provided on the non-photosensitive area 513 between the photosensitive areas 512 of adjacent photosensitive elements in the same pixel unit 511. Such a setting can reduce the difficulty of processing the light-shielding microstructure while reducing the problem of light crosstalk between pixel units.

[0134] Correspondingly, the present invention also provides a detection chip.

[0135] refer to Figure 8 , shows a schematic cross-sectional structure diagram of an embodiment of a detection chip of the present invention.

[0136] The detection chip includes: a detector grain 110, wherein the detector grain 110 has a plurality of pixels 111; a light-shielding microstructure 120, wherein the light-shielding microstructure 120 is located on the detector grain 110 and protrudes from the surface of the detector grain 110, wherein the light-shielding microstructure 120 exposes a photosensitive area 112 of the pixel 111, and wherein the light-shielding microstructure 120 is configured to prevent light within a preset angle range from being incident on the photosensitive area 112 of the pixel 111.

[0137] It should be noted that in some embodiments of the present invention, the detection chip is a detection chip manufactured by the detection chip manufacturing method of the present invention. The specific technical solution of the detection chip can refer to the above-mentioned detection chip manufacturing method embodiment.

[0138] Combined with reference Figure 5 , a plurality of the pixels 111 are arranged in an array to form a pixel array (not shown in the figure). Each of the pixels 111 has a photosensitive region 112; in a plane parallel to the surface of the detector grain 110, the light shielding microstructure 120 exposes the photosensitive region 112 of the pixel 111. Figure 4 and Figure 5 As shown, the light shielding microstructure 120 has an opening 123 that penetrates along the thickness direction, and the bottom of the opening 123 exposes the photosensitive area 112. Figure 5 yes Figure 8 FIG. 1 is a schematic diagram of a top view of the detector grain 110 and the light-shielding microstructure 120.

[0139] Specific as Figure 2 and Figure 3 In some specific embodiments shown, the pixel 111 includes at least one photosensitive element. Specifically, the photosensitive element can be a SPAD, a multi-pixel photon counter (MPPCs), a silicon photomultiplier (SiPMs), an avalanche photodiode (APD), etc.

[0140] In some specific embodiments, in a plane parallel to the surface of the detector crystal grain 110, the photosensitive regions 112 of the plurality of pixels 111 are discretely distributed, that is, the photosensitive regions 112 of adjacent pixels 111 do not share a common boundary; the detector crystal grain 110 further includes a non-photosensitive region 113, and the light-shielding microstructure 120 is located on the non-photosensitive region 113; in a plane parallel to the surface of the detector crystal grain 110, the projection of the light-shielding microstructure 120 is located within the projection range of the non-photosensitive region 113; in some embodiments, the width of the light-shielding microstructure 120 does not exceed the width of the non-photosensitive region 113. The width of the non-photosensitive region 113 refers to the size of the non-photosensitive region 112 between adjacent photosensitive regions 112 in a plane parallel to the surface of the detector crystal grain 110; correspondingly, the width of the light-shielding microstructure 120 refers to the size of the light-shielding microstructure 121 between adjacent photosensitive regions 112 in a plane parallel to the surface of the detector crystal grain 110.

[0141] The non-photosensitive area 113 is located between the photosensitive areas 112 of adjacent pixels 111 in the detector die 110 ; in addition, the plurality of pixels 111 distributed in an array are also suitable for forming a pixel array, and the non-photosensitive area 113 also surrounds the pixel array.

[0142] Therefore, in a plane parallel to the surface of the detector die 110 , the light-shielding microstructure 120 is also located between adjacent pixels 111 and surrounds the pixel array; a plurality of pixels 111 of the detector die 110 are surrounded one by one by the light-shielding microstructure 120 .

[0143] The light-shielding microstructure 120 is located on the side of the detector grain 110 where light is incident. That is, the direction of the light-shielding microstructure 120 pointing to the detector grain 110 is consistent with the direction in which light is incident on the photosensitive area 112 of the pixel 111, thereby effectively suppressing light crosstalk between the photosensitive areas 112 of adjacent pixels 111, and also effectively suppressing reflection of the non-photosensitive area 113.

[0144] In some embodiments of the present invention, the detector die 110 includes: a substrate 114 , the photosensitive region 112 of the pixel 111 is located in the substrate 114 ; and the light shielding microstructure 120 protrudes from the surface of the substrate 114 .

[0145] Specifically, the photosensitive area 112 is located within the surface of the substrate 114; therefore, the light shielding microstructure 120 protrudes from the surface of the substrate 114. In the opposite direction of the direction in which the light enters the photosensitive area 112, the light shielding microstructure 120 extends from the surface of the substrate 114 by at least a certain distance.

[0146] Combined with reference Figure 6In some specific embodiments, the height H of the light shielding microstructure 120 protruding from the surface of the detector grain 110 is not less than 1 / 2 of the characteristic size P of the photosensitive area 112 of the pixel. The characteristic size refers to the minimum size of the photosensitive area of ​​the pixel. Figures 1 to 6 In some specific embodiments shown, the photosensitive area 112 of the pixel 111 is a square, and the characteristic size P is the side length of the square. In other embodiments of the present invention, the photosensitive area of ​​the pixel may also be other shapes, such as a rectangle, a circle, a hexagon, etc.

[0147] The height H of the light shielding microstructure 120 is related to the preset angle range of the light blocked by the light shielding microstructure 120. Specifically, the height H of the light shielding microstructure 120 protruding from the surface of the detector grain 110 is not less than 1 / 2 of the characteristic size P of the photosensitive area 112 of the pixel, so the light shielding microstructure 120 can suppress the light with an incident angle θ greater than 45° from entering the photosensitive area 112 of the pixel. Figure 6 Shows Figure 8 The cross-sectional structure diagram of a single pixel in the detection chip embodiment is shown.

[0148] In some embodiments, the material of the light-shielding microstructure 120 includes photoresist. Specifically, the light-shielding microstructure 120 is configured to block light within a preset angle range by absorption; the material of the light-shielding microstructure 120 is dark photoresist to block light by absorption.

[0149] The light-shielding microstructure 120 protrudes from the surface of the detector grain 110, that is, the light-shielding microstructure has a certain height; and the light-shielding microstructure 120 blocks light by absorption, so each surface of the light-shielding microstructure 120 can absorb light, so the light-shielding microstructure 120 protruding from the surface of the detector grain 110 has a larger light-absorbing area, which can significantly improve the light-absorbing effect.

[0150] Figure 8 In some of the embodiments shown, the detection chip further includes: a light-transmitting material 130 , and the light-transmitting material 130 is at least filled on the photosensitive area 212 .

[0151] The light-transmitting material 130 is suitable for protecting the light-shielding microstructure 120 to prevent the light-shielding microstructure 120 from being damaged during the process. Specifically, the light-transmitting material 130 at least fills the opening 123 (such as Figure 4 and Figure 5 shown).

[0152] In some embodiments of the present invention, the thickness of the light-transmitting material 130 is not less than the height of the light-shielding microstructure 120 protruding from the surface of the detector grain 110 , that is, in the direction perpendicular to the surface of the detector grain 110 , the size of the light-transmitting material 130 is greater than or equal to the distance between the surface of the light-shielding microstructure 120 away from the side of the detector grain 110 and the surface of the detector grain 110 .

[0153] Figure 8 In some specific embodiments shown, the thickness of the light-transmitting material 130 is greater than the height of the light-shielding microstructure 120 protruding from the surface of the detector grain 110, and the light-transmitting material 130 also extends onto the light-shielding microstructure 120, and the light-transmitting material 130 also extends to the side of the light-shielding microstructure 120 away from the detector grain 110.

[0154] It should be noted that, in other embodiments of the present invention, the thickness of the light-transmitting material may also be equal to the height of the light-shielding microstructure protruding from the surface of the detector grain, and the light-transmitting material exposes the surface of the light-shielding microstructure away from the detector grain.

[0155] Continue to refer Figure 8 In some embodiments of the present invention, the detection chip further includes: a packaging carrier 160 ; the detector die 110 is fixed on the packaging carrier 160 and electrically connected to the packaging carrier 160 .

[0156] The package carrier 160 is used to fix the detector die 110 and realize the connection between the detector die 110 and the external circuit. Specifically, the package carrier 160 includes but is not limited to a lead frame, a laminate substrate, a ceramic substrate, a carrier tape and other components. The detector die 110 can be mounted on the package carrier 160 through a die bonding process; the detector die 110 and the package carrier 160 can be electrically connected in a manner including but not limited to wire bonding, flip chip bonding, wafer-level bonding and the like.

[0157] In some embodiments, the detection chip further includes: a plastic package 170 , wherein the plastic package 170 covers at least a portion of the surface of the detector die 110 and at least a portion of the surface of the package carrier 160 .

[0158] The plastic package 170 is used to fix and protect the detector die 110 and the package carrier 160. Figure 8 In some of the embodiments shown, the detector die 110 and the package carrier 160 are electrically connected via wire bonding; therefore, the plastic package 170 can also protect the formed bonding wires.

[0159] The plastic package 170 is made of a non-light-transmitting material. Specifically, the main components of the plastic package 170 include but are not limited to epoxy resin and various additives (for example, curing agent, modifier, release agent, coloring agent, flame retardant, etc.).

[0160] like Figure 8 As shown, the detection chip has a light-transmitting window 140 penetrating the plastic package 170 . The light-transmitting window 140 exposes the pixels 111 of the detector die 110 , and light is incident on the detector die 110 from the light-transmitting window 140 .

[0161] It should be noted that, in some embodiments, the light-sensitive area 112 exposed by the light-shielding microstructure 120 is also filled with the light-transmitting material 130 , and the light-transmitting window 140 exposes the light-shielding microstructure 120 ; therefore, the light-transmitting material 130 is located in the light-transmitting window 140 .

[0162] Continue to refer Figure 8 The detection chip further includes a filling member 350 formed in the light-transmitting window 340 .

[0163] The filler 150 is made of transparent material. Figure 8 In some of the embodiments shown, the filler 150 is made of glass.

[0164] The light successively passes through the filler 150 and the light-transmitting material 130. Among the light that passes through the filler 150 and the light-transmitting material 130, the light within the preset angle range is projected onto the light-shielding microstructure 120, and is blocked by the light-shielding microstructure 120 and cannot be incident on the photosensitive area 112 of the pixel 111. In some specific embodiments, the light within the preset angle range is projected onto the light-shielding microstructure 120, and is absorbed by the light-shielding microstructure 120, and does not form crosstalk.

[0165] In some embodiments, the light-transmitting material 130 is filled on the photosensitive area 112 and extends onto the light-shielding microstructure 120, and the light-transmitting material 130 is exposed at the bottom of the light-transmitting window 140; therefore, the light-transmitting material 130 is filled between the light-shielding microstructure 120 and the filling piece 150, and the light-transmitting material 130 is also filled between the detector grain 110 exposed by the light-shielding microstructure 120 and the filling piece 150.

[0166] It should be noted that, in other embodiments of the present invention, the thickness of the light-transmitting material is equal to the height of the light-shielding microstructure protruding from the surface of the detector grain, and the light-transmitting material exposes the surface of the light-shielding microstructure away from the detector grain; the light-transmitting material is only filled between the detector grain exposed by the light-shielding microstructure and the filling member.

[0167] It should also be noted that Figure 8 In some of the embodiments shown, the material of the filler is glass. In some other embodiments, the material of the filler may also be the light-transmitting material, that is, the filler may also be made of the same material as the light-transmitting material.

[0168] In addition, in some specific embodiments, the light shielding microstructure 120 is connected to the detector die 110 on one side facing the detector die 110; and Figure 8 In some of the embodiments shown, a side of the light-shielding microstructure 120 facing the filler 150 is separated from the filler 150 .

[0169] It should be noted that Figure 8 In some of the embodiments shown, the shielding members 121 of the light-shielding microstructure 120 surround each pixel 111 respectively, and the shielding members 121 surrounding different pixels 111 are integrally connected.

[0170] like Figure 8 As shown, the light shielding microstructure 120 includes a shielding member 121. Specifically, in a plane perpendicular to the detector crystal grain 110, the cross-sectional shape of the shielding member 121 is a long strip, one end of which contacts the surface of the non-photosensitive area of ​​the detector crystal grain 110, and the other end extends in a direction away from the detector crystal grain 110.

[0171] It should be noted that Figure 8 In some of the embodiments shown, the cross section of the shielding member 121 is in the shape of a long strip in a plane perpendicular to the detector die 110. In other embodiments of the present invention, the shielding member may also be in other shapes.

[0172] like Fig. 9 In some embodiments shown, the width of the shielding member 221 of the light shielding microstructure 220 close to the detector die 210 is greater than the width of the shielding member 221 away from the detector die 210. The width refers to the dimension in a plane parallel to the surface of the detector die 210.

[0173] In some specific embodiments, the width of the shielding member 221 gradually decreases in a direction away from the detector die 210. Fig. 9 As shown, in a plane perpendicular to the surface of the detector die 210 , the cross-section of the shielding member 221 is trapezoidal.

[0174] It should be noted that Figure 8 and Fig. 9In some embodiments shown, the light shielding microstructures 120 are close to the detector die 110, that is, the distance between the light shielding microstructure 120 and the detector die 110 is smaller than the distance between the light shielding microstructure 120 and the filler. In other embodiments of the present invention, the light shielding microstructures may also be close to the filler.

[0175] like Fig.12 In some embodiments shown, one end of the light-shielding microstructure 320 facing the filler 350 is connected to the filler 350. In addition, in some embodiments, the light-shielding microstructure 320 is separated from the detector die 310, that is, the end of the light-shielding microstructure 320 facing the detector die 310 does not contact the surface of the detector die 310.

[0176] like Fig.12 In some of the illustrated embodiments, a distance W between one end of the light-shielding microstructure 320 facing the detector die 310 and the detector die 310 is smaller than a characteristic size P of the photosensitive region 312 of the pixel 311 . The smaller the distance W between one end of the light-shielding microstructure 320 facing the detector grain 310 and the detector grain 310, the larger the minimum incident angle of the light that can be incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312. Therefore, limiting the distance W between one end of the light-shielding microstructure 320 facing the detector grain 310 and the detector grain 310 can effectively limit the minimum incident angle of the light that is incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312. The larger the minimum incident angle of the light that is incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312 on the photosensitive area 312, the less the light that can be incident from between the light-shielding microstructure 320 and the detector grain 310 to the photosensitive area 312, thereby achieving the purpose of reducing stray light.

[0177] In some embodiments, a transparent material 330 is further formed on the light shielding microstructure 320. Fig.12 As shown, the transparent material 330 also extends to the surface of the light-shielding microstructure 320 on one side away from the filling member 350 , so the transparent material 330 is filled between the light-shielding microstructure 320 and the detector die 310 .

[0178] like Fig.12 As shown, in the plane perpendicular to the detector crystal grain 310 , the cross-sectional shape of the shielding member 321 of the light-shielding microstructure 320 is in the shape of an elongated strip, one end of which contacts the surface of the non-photosensitive area of ​​the detector crystal grain 310 , and the other end extends in a direction away from the detector crystal grain 310 .

[0179] It should be noted that Fig.12 In some of the embodiments shown, the cross-section of the shielding member 321 is in the shape of an elongated strip, that is, the width of the shielding member 321 of the light-shielding microstructure 320 close to the detector die 310 is equal to or close to the width of the shielding member 321 away from the detector die 310. In other embodiments of the present invention, the shielding member may also be in other shapes.

[0180] like Fig.13 In some of the embodiments shown, the width of the shielding member 421 of the light-shielding microstructure 420 at one end close to the detector die 410 is greater than the width of the shielding member 421 at one end away from the detector die 410 .

[0181] In some specific embodiments, the width of the shielding member 421 gradually decreases along the direction toward the detector die 210. Fig.13 As shown, in a plane perpendicular to the surface of the detector die 410 , the cross-section of the shielding member 421 is trapezoidal.

[0182] It should be noted that, in the above-mentioned embodiment, in the detector die 110, the pixel unit 111 includes a photosensitive element, such as Figure 4 and Figure 5 In other embodiments of the present invention, Fig.14 As shown, the pixel unit 511 may also include multiple photosensitive elements, each of which has a photosensitive area 512; the photosensitive areas in the photosensitive elements of adjacent pixel units 511 have the non-photosensitive area 513 between them, and the photosensitive areas 512 of adjacent photosensitive elements of the same pixel unit 511 also have a non-photosensitive area 513 between them.

[0183] like Fig.14 As shown, the light-shielding microstructure 520 is located on the non-photosensitive area 513 between adjacent pixel units 511, and the light-shielding microstructure 520 exposes the non-photosensitive area 513 between the photosensitive areas 512 of adjacent photosensitive elements in the same pixel unit 511; the light-shielding microstructure 520 is only located on the non-photosensitive area 513 between adjacent pixel units 511, and the light-shielding microstructure 520 is not provided on the non-photosensitive area 513 between the photosensitive areas 512 of adjacent photosensitive elements in the same pixel unit 511. Thus, the processing difficulty of the light-shielding microstructure can be reduced while the light crosstalk problem between pixel units is reduced. In addition, the present invention also provides a laser radar.

[0184] The laser radar includes: a transmitting module, which is suitable for generating detection light, and the detection light is linearly polarized light; a transmission module, which transmits the detection light to form scanning light; the scanning light is reflected by the target to form echo light; a detection module, which is suitable for receiving the echo light, and the detection module includes: a detection chip, which includes: a detector grain, and the detector grain has a plurality of pixels; a light-shielding microstructure, which is located on the detector grain and protrudes from the surface of the detector grain, the light-shielding microstructure exposes the photosensitive area of ​​the pixel, and the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

[0185] In some embodiments of the present invention, the detection chip in the detection module is the detection chip of the present invention. The specific technical solution of the detection chip refers to the embodiment of the detection chip above, and the present invention will not be repeated here.

[0186] In the detection module, the detector crystal grain of the detection chip has a light-shielding microstructure, which protrudes from the surface of the detector crystal grain and is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel. The light-shielding microstructure can effectively block stray light within a preset angle range from being incident on the photosensitive area of ​​the pixel, can suppress reflections outside the photosensitive area, and can effectively suppress light crosstalk, which is beneficial to improving the laser radar's distance measurement capability and detection accuracy.

[0187] In summary, the light-shielding microstructure on the detector die protrudes from the surface of the detector die, and the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel. The light-shielding microstructure has a certain height and protrudes from the surface of the detector die, so the light-shielding microstructure can effectively block stray light within a preset angle range from being incident on the photosensitive area of ​​the pixel, can suppress reflections outside the photosensitive area, and can effectively suppress light crosstalk.

[0188] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A detection chip, characterized in that: include: A detector die, wherein the detector die has a plurality of pixels; A light-shielding microstructure, which is located on the detector crystal grain and protrudes from the surface of the detector crystal grain, the light-shielding microstructure exposes the photosensitive area of ​​the pixel, and is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

2. The detection chip according to claim 1, characterized in that: The detector die comprises: a substrate, wherein the photosensitive region of the pixel is located in the substrate; The light-shielding microstructure protrudes from the surface of the substrate.

3. The detection chip according to claim 1, characterized in that: The detector crystal grain further includes: a non-photosensitive area; and the light-shielding microstructure is located on the non-photosensitive area.

4. The detection chip according to claim 3, characterized in that: The plurality of pixels of the detector die are suitable for forming a pixel array; The non-photosensitive area is located between the photosensitive areas of adjacent pixels in the detector die, and the non-photosensitive area also surrounds the pixel array.

5. The detection chip according to claim 1, characterized in that: The height of the light-shielding microstructure protruding from the surface of the detector grain is not less than 1 / 2 of the characteristic size of the photosensitive area of ​​the pixel.

6. The detection chip according to claim 1, characterized in that: The material of the light-shielding microstructure includes photoresist.

7. The detection chip according to claim 1, characterized in that: Also includes: A light-transmitting material is at least filled on the photosensitive area.

8. The detection chip according to claim 7, characterized in that: The thickness of the light-transmitting material is not less than the height of the light-shielding microstructure protruding from the surface of the detector grain.

9. The detection chip according to claim 7, characterized in that: The detection chip has a light-transmitting window, and light is incident on the detector grain from the light-transmitting window; The light-transmitting material is located in the light-transmitting window.

10. The detection chip according to claim 9, characterized in that: Also includes: A filling piece, wherein the filling piece is formed in the light-transmitting window; The light-transmitting material is filled between the light-shielding microstructure and the filling member, and the light-transmitting material is also filled between the detector grains exposed by the light-shielding microstructure and the filling member.

11. The detection chip according to claim 10, characterized in that: One end of the light-shielding microstructure facing the filling piece is connected to the filling piece.

12. The detection chip according to claim 11, characterized in that: The light-shielding microstructure comprises: a shielding member; The width of the shielding member at one end close to the filling member is greater than the width of the shielding member at one end away from the filling member.

13. The detection chip according to claim 11, characterized in that: The distance between one end of the light-shielding microstructure facing the detector grain and the detector grain is smaller than a characteristic size of a photosensitive area of ​​the pixel.

14. The detection chip according to claim 1, characterized in that: Also includes: Package carrier board; The detector die is fixed on the packaging carrier and is electrically connected to the packaging carrier.

15. The detection chip according to claim 14, characterized in that: Also includes: A plastic package body, the plastic package body covering at least a portion of the surface of the detector die and at least a portion of the surface of the packaging carrier; The light-transmitting window of the detection chip passes through the plastic package.

16. The detection chip according to claim 1, characterized in that: The side of the light-shielding microstructure facing the detector grain is connected to the detector grain.

17. The detection chip according to claim 16, characterized in that: The light-shielding microstructure comprises: a shielding member; The width of the shielding member at one end close to the detector die is greater than the width of the shielding member at one end away from the detector die.

18. A laser radar, characterized in that: include: A transmitting module, wherein the transmitting module is suitable for generating a detection light; A transmission module, wherein the transmission module transmits the detection light to form a scanning light; The scanning light is reflected by the target to form echo light; A detection module, wherein the transmitting module is suitable for receiving the echo light, and the detection module comprises: a detection chip, wherein the detection chip comprises: a detector grain, wherein the detector grain has a plurality of pixels; a light-shielding microstructure, wherein the light-shielding microstructure is located on the detector grain and protrudes from the surface of the detector grain, wherein the light-shielding microstructure exposes a photosensitive area of ​​the pixel, and wherein the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

19. A method for manufacturing a detection chip, characterized in that: include: providing a substrate; According to the photosensitive area of ​​the pixel in the detector grain, a light-shielding microstructure is formed on the substrate, the light-shielding microstructure protrudes from the surface of the substrate, the light-shielding microstructure exposes the photosensitive area of ​​the pixel, and the light-shielding microstructure is configured to prevent light within a preset angle range from being incident on the photosensitive area of ​​the pixel.

20. The manufacturing method according to claim 19, characterized in that: In the step of providing a substrate, the substrate includes: a detector die, the detector die having a plurality of pixels; In the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure is formed on the detector grain, and the light-shielding microstructure protrudes from the surface of the detector grain.

21. The manufacturing method according to claim 19, characterized in that: In the step of providing a substrate, the substrate is a filling member; In the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure is formed on the surface of the filling member, and the light-shielding microstructure protrudes from the surface of the filling member; The manufacturing method further comprises: The filling piece formed with the light-shielding microstructure is attached to the detector grain, and the surface of the filling piece formed with the light-shielding microstructure faces the detector grain.

22. The manufacturing method according to claim 19, characterized in that: Also includes: Fixing the detector die to a packaging carrier and electrically connecting the detector die to the packaging carrier; A plastic package is formed, wherein the plastic package covers at least a portion of the surface of the detector grain and at least a portion of the surface of the packaging carrier; and the light-transmitting window of the detection chip passes through the plastic package.

23. The manufacturing method according to claim 22, characterized in that: Also includes: Before forming the plastic package body, a light-transmitting material is formed, and the light-transmitting material is at least filled on the photosensitive area.

24. The manufacturing method according to claim 23, characterized in that: The steps of forming the plastic package include: Forming a pre-plastic encapsulation body, wherein the pre-plastic encapsulation body covers the detector die and a portion of the surface of the packaging carrier, and the pre-plastic encapsulation body also extends to a position corresponding to the light-transmitting window of the detection chip; A light-transmitting window is formed through the pre-molded body to form the plastic-molded body, and the light-transmitting material is exposed at the bottom of the light-transmitting window.

25. The manufacturing method according to claim 22, 23 or 24, characterized in that: Also includes: A filling piece is formed in the light-transmitting window.

26. The manufacturing method according to claim 19, characterized in that: The step of forming a light-shielding microstructure on the substrate comprises: A light-shielding material is formed on the substrate; and according to the photosensitive area of ​​the pixel in the detector grain, part of the light-shielding material is removed to form the light-shielding microstructure.

27. The manufacturing method according to claim 26, characterized in that: In the step of forming the light-shielding material on the substrate, the light-shielding material is formed on the substrate by a spin coating process; In the step of removing part of the light-shielding material to form the light-shielding microstructure, part of the light-shielding material is removed by at least one of exposure, development and etching.

28. The manufacturing method according to claim 19, characterized in that: Also includes: forming detector grains; The steps of forming the detector grain include: providing a substrate; forming a photosensitive region in the substrate; In the step of forming a light-shielding microstructure on the substrate, the light-shielding microstructure protrudes from the surface of the substrate.

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