Method and device for repairing vaporific defect of mask plate

Abstract

The invention discloses a method and a device for repairing mist defects of a mask template, and the method comprises the steps: carrying out the defect detection of the mask template, and taking the mask template with the organic mist defects as a problem mask template when the existence of the organic mist defects is detected; placing the problem mask plate in a closed process chamber; heating the defective mask plate to gasify the organic vaporific defects in the mask plate protective film of the defective mask plate to form gaseous organic matters; purified gas is supplied to the process chamber, and part of the purified gas penetrates through the filter on the defective mask plate and then enters the mask plate protection film of the defective mask plate, so that air containing gaseous organic matter in the mask plate protection film is replaced or replaced; and exhausting the process chamber so as to exhaust part of the purified gas containing the gaseous organic matters in the process chamber. According to the method, the organic mist defect on the mask plate can be effectively removed without replacing the protective film of the mask plate, the mask pattern cannot be damaged in the repairing process, and the cost can be saved.

Description

Technical Field

[0001] The present application relates to the field of masks, and in particular to a method and device for repairing foggy defects of masks. Background Art

[0002] The mask, also known as a photomask, is an indispensable component in the photolithography process. The pattern on the mask is transferred to the photoresist layer through the exposure process.

[0003] The structure of an existing mask generally includes: a mask substrate, the mask substrate includes a graphic area; a mask protective film located on the upper surface of the mask substrate and surrounding the graphic area, the mask protective film is used to seal the mask, and the mask protective film includes an annular frame, a protective film located on the top of the annular frame, and a filter located in the annular frame.

[0004] When wafer factories use masks, due to factors such as transportation, storage environment, use environment and materials, fog defects will form on the surface of the mask (transparent substrate and / or shielding pattern surface). This fog defect will cause yield loss on the wafer during the photolithography process. The current practice is to send masks with fog defects back to the mask factory for repair. The repair method is generally to remove the mask protective film on the mask, then perform multiple cleaning processes to wash off the fog defects, and finally re-apply a new mask protective film. This repair method has the following problems and disadvantages: (1) The repair cycle takes several days, during which the mask cannot be used, causing production interruption; (2) When repairing the mask, multiple cleaning processes are required. During this process, the mask is directly treated chemically and physically. Each cleaning will cause slight changes or damage to the masking pattern. After multiple times, the accumulated changes or damage will cause the mask to be scrapped; (3) Additional cleaning process and replacement of new mask protective film cause additional costs; (4) If the mask is scrapped during the repair process, it will cause a long wafer fab shutdown and a lot of additional costs. Summary of the invention

[0005] The technical problem to be solved by the present application is to provide a method and device for repairing fog defects of a mask, which can effectively remove organic fog defects formed in the mask protective film of the mask without removing the mask protective film on the mask, and the repair process will not cause damage to the masking pattern, can save costs, and can also reduce the risk of mask scrapping.

[0006] In order to solve the above problems, the present application provides a method for repairing fog defects of a mask, wherein the mask comprises a mask substrate and a mask protective film located on the upper surface of the mask substrate and sealing the mask substrate, wherein the mask substrate comprises a graphic area, wherein the graphic area comprises a light-transmitting area and a non-light-transmitting area, and the mask protective film comprises an annular frame located on the upper surface of the mask substrate and surrounding the graphic area, a protective film located on the top of the annular frame, and a filter located in the annular frame and communicating with the inner and outer spaces of the annular frame, comprising: Performing defect detection on the mask, detecting that an organic haze defect exists on the surface of the graphic area in the protective film of the mask, and treating the mask having the organic haze defect as a defective mask; Placing the problematic mask in a closed process chamber; Heating the problematic mask to gasify the organic mist defects in the mask protective film of the problematic mask to form gaseous organic matter, wherein the gaseous organic matter is distributed in the air in the mask protective film; Supplying a purge gas into the process chamber, wherein a portion of the purge gas passes through a filter on the problematic mask and enters a mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; The process chamber is exhausted to discharge part of the purified gas containing gaseous organic matter in the process chamber.

[0007] In some embodiments, the mask substrate includes a transparent substrate and a plurality of discrete opaque patterns located on the upper surface of the transparent substrate, the annular frame is adhered to the upper surface of the edge area of ​​the mask substrate by adhesive, and the temperature for heating the problematic mask is lower than the melting temperature of the adhesive.

[0008] In some embodiments, the temperature range for heating the problematic mask is 30° C.-80° C.

[0009] In some embodiments, a mode of supplying the purge gas into the process chamber includes a continuous supply mode or a cyclic supply mode, wherein the continuous supply mode includes continuously supplying the purge gas into the process chamber, and the cyclic supply mode includes cyclically performing a supply phase and a static phase, wherein the purge gas is supplied to the process chamber during the supply phase, and the supply of the purge gas to the process chamber is stopped during the static phase.

[0010] In some embodiments, the mode of exhausting the process chamber includes a continuous exhaust mode or a cyclic exhaust mode, wherein the continuous exhaust mode includes continuously exhausting the process chamber, and the cyclic exhaust mode includes cycling the process chamber through an exhaust phase and a non-exhaust phase, wherein the process chamber is exhausted in the exhaust phase and is not exhausted in the non-exhaust phase.

[0011] In some embodiments, when the mode of supplying the purge gas into the process chamber is a continuous supply mode, the mode of exhausting the process chamber is a continuous exhaust mode.

[0012] In some embodiments, when the mode for supplying the purification gas to the process chamber is a circulation supply mode, the mode for exhausting the process chamber is a circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

[0013] In some embodiments, the exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point and the end time point of the exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the supply phase in the cyclic supply mode; the start time point and the end time point of the non-exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the static phase in the cyclic supply mode.

[0014] In some embodiments, the exhaust stage in the cyclic exhaust mode corresponds to the supply stage in the cyclic supply mode, and the non-exhaust stage in the cyclic exhaust mode corresponds to the static stage in the cyclic supply mode, including: the start time point of at least one exhaust stage in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply stage in the cyclic supply mode, and the end time points of all exhaust stages in the cyclic exhaust mode are consistent with the end time point of the corresponding supply stage in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber, thereby allowing the air containing gaseous organic matter in the mask protective film of the problematic mask to be replaced or displaced faster during the exhaust stage; the start time points of all non-exhaust stages in the cyclic exhaust mode are consistent with the start time point of the corresponding static stage in the cyclic supply mode, and the end time point of at least one non-exhaust stage in the cyclic exhaust mode is earlier than the end time point of the corresponding static stage in the cyclic supply mode, and the non-exhaust stage with an early end time point is located before the exhaust stage with an early start time point.

[0015] In some embodiments, when the process chamber is exhausted, the problematic mask is rotated so that the air containing gaseous organic matter in the mask protective film of the problematic mask is replaced or displaced more quickly under the action of centrifugal force.

[0016] In some embodiments, the process time of the method for repairing the haze defect of the mask is less than 72 hours. After the process time is reached, the problematic mask in the process chamber is cooled, and the purification gas is continuously supplied during the cooling.

[0017] In some embodiments, after cooling, the problematic mask is removed from the process chamber, and defect inspection is performed again on the problematic mask to confirm the removal effect of the organic haze defect.

[0018] In some embodiments, the component of the organic haze defect is one or more of benzene, ethylbenzene, toluene, o-xylene, p-xylene, styrene, 1,3,5-trimethylbenzene, 1,2,4-trimethylbenzene, dichloromethane, cyclopentane, isopropanol, ethyl acetate, propylene glycol methyl ether acetate, acetone, 1,2-butanone, and propylene glycol methyl ether, or is a derivative component after decomposition and polymerization of these components.

[0019] In some embodiments, the purge gas is N2 or purified dry air.

[0020] In some embodiments, the number of filters in the annular frame is one or more.

[0021] On the other hand, the present application also provides a device for repairing a foggy defect of a mask, comprising: A process chamber, wherein the process chamber is used to place a problematic mask to be processed, wherein a mask protective film of the problematic mask has organic fogging defects; A heating unit, used for heating the problematic mask to gasify the organic mist defects in the mask protective film of the problematic mask to form gaseous organic matter, wherein the gaseous organic matter is distributed in the air in the mask protective film; A purge gas supply unit, used for supplying purge gas into the process chamber, wherein part of the purge gas passes through a filter on the problematic mask and enters the mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; The exhaust unit is used to exhaust the process chamber to discharge part of the purified gas containing gaseous organic matter in the process chamber.

[0022] In some embodiments, a stage is provided in the process chamber, and the problematic mask is placed and fixed on the stage.

[0023] In some embodiments, the heating unit is located in the stage, and the temperature range of the heating unit heating the problematic mask is 30° C.-80° C.

[0024] In some embodiments, a control unit is also included, which is connected to the purge gas supply unit and is used to control the mode of the purge gas supply unit when supplying the purge gas into the process chamber. The purge gas supply mode includes a continuous supply mode or a cyclic supply mode. The continuous supply mode includes continuously supplying the purge gas into the process chamber. The cyclic supply mode includes a cyclic supply stage and a static stage, wherein the purge gas is supplied to the process chamber during the supply stage, and the supply of the purge gas to the process chamber is stopped during the static stage.

[0025] In some embodiments, the control unit is also connected to the exhaust unit to control the mode of the exhaust unit when exhausting the process chamber, and the exhaust mode includes a continuous exhaust mode or a cyclic exhaust mode. The continuous exhaust mode includes continuously exhausting the process chamber, and the cyclic exhaust mode includes cyclically performing an exhaust phase and a non-exhaust phase on the process chamber, wherein the process chamber is exhausted in the exhaust phase, and the process chamber is not exhausted in the non-exhaust phase.

[0026] In some embodiments, when the control unit controls the purge gas supply unit to supply purge gas to the process chamber in a continuous supply mode, the control unit correspondingly controls the exhaust unit to exhaust the process chamber in a continuous exhaust mode.

[0027] In some embodiments, when the control unit controls the purge gas supply unit to supply purge gas into the process chamber in a circulation supply mode, the corresponding control unit controls the exhaust unit to exhaust the process chamber in a circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

[0028] In some embodiments, the exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point and the end time point of the exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the supply phase in the cyclic supply mode; the start time point and the end time point of the non-exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the static phase in the cyclic supply mode.

[0029] In some embodiments, the exhaust stage in the cyclic exhaust mode corresponds to the supply stage in the cyclic supply mode, and the non-exhaust stage in the cyclic exhaust mode corresponds to the static stage in the cyclic supply mode, including: the start time point of at least one exhaust stage in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply stage in the cyclic supply mode, and the end time points of all exhaust stages in the cyclic exhaust mode are consistent with the end time point of the corresponding supply stage in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber, thereby allowing the air containing gaseous organic matter in the mask protective film of the problematic mask to be replaced or displaced faster during the exhaust stage; the start time points of all non-exhaust stages in the cyclic exhaust mode are consistent with the start time point of the corresponding static stage in the cyclic supply mode, and the end time point of at least one non-exhaust stage in the cyclic exhaust mode is earlier than the end time point of the corresponding static stage in the cyclic supply mode, and the non-exhaust stage with an early end time point is located before the exhaust stage with an early start time point.

[0030] In some embodiments, a driving unit is further included, wherein the driving unit is connected to the carrier and is used to drive the carrier to rotate. When the exhaust unit exhausts the process chamber, the driving unit drives the carrier to rotate, thereby rotating the problematic mask fixed on the carrier, so that the air containing gaseous organic matter in the mask protective film of the problematic mask can be replaced or displaced more quickly under the action of centrifugal force.

[0031] The technical solution of this application has the following advantages: The method and device for repairing mask fog defects in some of the aforementioned embodiments of the present application, in one embodiment, the method includes: performing defect detection on the mask, detecting the presence of organic fog defects on the surface of the graphic area in the mask protective film of the mask, and treating the mask with the organic fog defects as a problematic mask; placing the problematic mask in a closed process chamber; heating the problematic mask to vaporize the organic fog defects in the mask protective film of the problematic mask to form gaseous organic matter, which is distributed in the air in the mask protective film; supplying purified gas to the process chamber, part of which passes through a filter on the problematic mask and enters the mask protective film of the problematic mask to replace or displace the air containing the gaseous organic matter in the mask protective film; and exhausting the process chamber to exhaust part of the purified gas containing the gaseous organic matter in the process chamber. In the present application, when the problematic mask is first heated, the organic mist defects in the mask protective film will be vaporized to form gaseous organic matter when heated, and the gaseous organic matter is distributed in the air in the mask protective film, and then the purge gas is supplied to the process chamber, and part of the purge gas passes through the filter on the problematic mask and enters the mask protective film of the problematic mask to replace or displace the air containing the gaseous organic matter in the mask protective film, and the specific process includes: after the purge gas is introduced into the process chamber, part of the purge gas is supplied at a pressure Under the action of the force, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, the air containing gaseous organic matter in the mask protective film will pass through the filter on the problematic mask and enter the mask protective film of the problematic mask. At the same time, under the action of the thrust of the purge gas entering from the filter, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, the air containing gaseous organic matter in the mask protective film will pass through the filter on the problematic mask and flow to the outside of the annular frame. This is repeated. At the end of the process, the air containing gaseous organic matter in the mask protective film is replaced or displaced by the purge gas entering from the filter. At the same time, it is also necessary to perform a step of exhausting the process chamber. The step of exhausting the process chamber can be coordinated with the step of supplying purge gas to the process chamber to ensure the efficiency and rate of replacement or displacement of the air containing gaseous organic matter outside the annular frame. Therefore, in the present application, through the aforementioned steps and the coordination between the steps, the organic fog defects formed in the mask protective film of the mask can be effectively removed without removing the mask protective film on the mask, and costs can be saved. In addition, there is no contact chemical and physical treatment during the repair process, so the masking pattern will not be damaged, and the risk of mask scrapping can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1A schematic diagram of a process of repairing a haze defect of a mask in some embodiments of the present application; Figure 2-Figure 3 A schematic diagram of the structure of a mask having organic haze defects in some embodiments of the present application; Figure 4-Figure 7 A control timing diagram for supplying a purge gas to the process chamber and exhausting the process chamber in some embodiments of the present application; Figure 8-Figure 9 Schematic diagram of the structure of a device for repairing haze defects of a mask in some embodiments of the present application. DETAILED DESCRIPTION

[0033] As mentioned in the background art, fogging defects may form on the surface of the existing mask (transparent substrate and / or shielding pattern surface).

[0034] After research, it was found that the fog defect is an organic fog defect, which has the following characteristics: the material is organic, the size is generally less than 1um; it is distributed in the graphic area within the mask protective film of the mask; the number is in the tens of thousands, millions, or even more; the defect structure is relatively loose, and it is easy to vaporize again after heating, and a high-concentration air mass will be formed in the space surrounded by the annular frame. If it is not discharged in time, it is easy to form a fog defect again after cooling. Based on the above research, the present application provides a method and device for repairing mask fog defects, which can effectively remove organic fog defects formed in the mask protective film of the mask without removing the mask protective film on the mask, and the repair process will not cause damage to the masking pattern, can save costs, and can reduce the risk of mask scrapping.

[0035] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present application in detail, for the convenience of explanation, the schematic diagram will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present application. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included.

[0036] In some embodiments of the present application, a method for repairing a haze defect of a mask is first provided. Figure 1 , including the steps of: Step S101, performing defect detection on the mask, detecting that an organic haze defect exists on the surface of a pattern area in a mask protective film of the mask, and treating the mask having the organic haze defect as a defective mask; Step S102, placing the problematic mask in a sealed process chamber; Step S103, heating the defective mask to gasify the organic mist defects in the mask protective film of the defective mask to form gaseous organic matter, wherein the gaseous organic matter is distributed in the air in the mask protective film; Step S104, supplying a purge gas into the process chamber, wherein a portion of the purge gas passes through a filter on the problematic mask and enters the mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; Step S105 , exhausting the process chamber to discharge part of the purified gas containing gaseous organic matter in the process chamber.

[0037] The specific process of the above method is described in detail below with reference to the accompanying drawings.

[0038] First, refer to Figure 1 , proceed to step S101, perform defect detection on the mask, detect that an organic haze defect exists on the surface of the graphic area in the mask protective film of the mask, and use the mask with the organic haze defect as a problem mask.

[0039] The mask is a mask required to be used in the photolithography process. Figure 2 and Figure 3 ,in Figure 3 for Figure 2 A schematic diagram of a cross-sectional structure along the cutting line AB, wherein the mask includes a mask substrate and a mask protective film located on the upper surface of the mask substrate to seal the mask substrate, wherein the mask substrate includes a graphic area and an edge area surrounding the graphic area, wherein the graphic area includes a light-transmitting area and a non-light-transmitting area. In a specific embodiment, the mask substrate includes a transparent substrate 201 and a plurality of discrete light-proof graphics 202 located on the upper surface of the transparent substrate 201, wherein the position of the light-proof graphics 202 corresponds to the light-proof area, and the position of the transparent substrate 201 on both sides or around the light-proof graphics 202 corresponds to the light-transmitting area.

[0040] The mask protective film includes an annular frame 204 located on the upper surface of the edge area of ​​the mask substrate and surrounding the graphic area, a protective film 206 located on the top of the annular frame 204, and a filter 205 located in the annular frame 204 and connecting the inner and outer spaces of the annular frame 204. In a specific embodiment, the annular frame 204 is located on the upper surface of the edge area of ​​the transparent substrate 201.

[0041] The sealed cavity formed by the mask protective film on the upper surface of the mask substrate is used to seal the light-transmitting area and the light-impermeable area of ​​the mask substrate to protect the mask from external damage and unnecessary particles or dust. The filter 205 is used to filter particles and balance the air pressure inside and outside the annular frame 204 and the protective film 206.

[0042] The material of the transparent substrate 201 is a light-transmitting material, and the light transmittance of the transparent substrate 201 is greater than 90%. In some embodiments, the material of the transparent substrate 201 can be quartz glass or soda glass. In some other embodiments, the material of the transparent substrate 201 can also be fused silica, calcium fluoride, silicon nitride, titanium oxide alloy, and sapphire.

[0043] The material of the opaque pattern 202 is an opaque material, and the opaque pattern 202 can be a single layer or a multi-layer stacked structure (such as a stacked structure of two or more layers). In some embodiments, the material of the opaque pattern 202 can be one or more of chromium, nickel, aluminum, ruthenium, molybdenum, titanium or tantalum. In some other embodiments, the material of the opaque pattern 202 can also be one or more of chromium, nickel, aluminum, ruthenium, molybdenum, titanium, tantalum, chromium oxide, iron oxide, niobium oxide, chromium nitride, molybdenum trioxide, molybdenum nitride, chromium oxide, titanium nitride, zirconium nitride, titanium oxide, tantalum nitride, tantalum oxide, silicon dioxide, niobium nitride, silicon nitride, neutral aluminum oxide, and aluminum oxide.

[0044] The annular frame 204 is in a hollow annular shape, and the material of the annular frame 204 is a material with a certain mechanical strength. In some embodiments, the material of the annular frame 204 is aluminum. In some other embodiments, the material of the annular frame 204 can be aluminum alloy, ceramic, carbon steel or other suitable metal material or non-metal material.

[0045] In some embodiments, the annular frame 204 is adhered to the upper surface of the edge region of the transparent substrate 201 through an adhesive layer 203 .

[0046] The material of the adhesion layer 203 is an organic adhesive. In some embodiments, the organic adhesive is a rubber adhesive, a polyurethane adhesive, an acrylic adhesive, a SEBS (styrene ethylene butylene styrene) adhesive, a SEPS (styrene ethylene propylene styrene) adhesive or a silicone adhesive.

[0047] The material of the protective film 206 is a light-transmitting material. In some embodiments, the material of the protective film 206 is a light-transmitting organic material or a light-transmitting inorganic material.

[0048] The filter 205 is an existing gas filter, and the filter 205 can filter out particles of a certain size in the air. The number of the filters 205 in the annular frame 204 is one or more. In some embodiments, when there are multiple filters 205, some of the filters 205 are set in the first position of the annular frame 204, and some are set in the second position of the annular frame 204. The first position and the second position are different positions on the circumference of the annular frame 20. In a specific embodiment, the first position and the second position are two relative positions. When the problematic mask 200 is subsequently repaired, the filter 205 at the first position of the annular frame 204 is close to the purification gas supply port of the process chamber, and the filter 205 at the second position of the annular frame 204 is close to the exhaust port of the process chamber. Therefore, in the subsequent repair process, the clean gas can easily flow from the filter 205 at the first position into the mask protective film, and the air containing vaporized organic matter in the mask protective film can easily flow out of the annular frame 204 from the filter 205 at the second position under the action of the suction force of the exhaust port, which is beneficial to improve the efficiency and rate of the subsequent displacement or replacement of the air containing vaporized organic matter in the mask protective film.

[0049] During the use of the mask, due to factors such as transportation, storage environment, use environment and materials, organic fog defects 20 will be formed on the surface of the graphic area in the mask protective film (including the upper surface of the transparent substrate 201, the surface of the opaque graphic 202 and / or the inner wall surface of the protective film 206). This organic fog defect 20 will affect the transmission of the exposure light during the photolithography process, thereby affecting the morphology, size and position accuracy of the photolithography pattern formed in the photoresist layer, and further causing yield loss on the wafer during the photolithography process.

[0050] The sources of the organic mist defects 20 may include: organic matter deposition in the production environment of the photomask factory; organic matter release from the protective film material itself; organic matter release from the mask shipping packaging material; organic matter deposition in the environment where the wafer factory uses the mask; organic matter deposition in the environment where the wafer factory stores the mask. The organic mist defects 20 have the following characteristics: the organic mist defects 20 are organic matter, and the size is generally less than 1um; distributed in the graphic area of ​​the mask protective film; the number is in tens of thousands, millions, or even more; the defect structure is relatively loose, and it is easy to gasify again after heating, and a high-concentration gas mass will be formed in the space surrounded by the annular frame 204. If it is not discharged in time, it is easy to form organic mist defects again after cooling.

[0051] In some embodiments, the components of the organic fog defects 20 include but are not limited to one or more of benzene, ethylbenzene, toluene, o-xylene, p-xylene, styrene, 1,3,5-trimethylbenzene, 1,2,4-trimethylbenzene, dichloromethane, cyclopentane, isopropanol, ethyl acetate, propylene glycol methyl ether acetate, acetone, 1,2-butanone, propylene glycol methyl ether, or are derived components after decomposition and polymerization of these components.

[0052] During the use of the mask, the mask will be regularly inspected for defects to monitor the status of the mask. The defect detection can be performed on a special defect detection device. After the defect detection, if it is found that there are organic haze defects 20 on the surface of the graphic area in the mask protective film (including the upper surface of the transparent substrate 201, the surface of the opaque graphic 202 and / or the inner wall surface of the protective film 206), the mask with the organic haze defects 20 needs to be repaired to remove the organic haze defects 20 in the mask protective film. In the present application, the mask with the organic haze defects 20 is regarded as a problem mask 200, and the problem mask 200 is subsequently repaired.

[0053] Next, continue to refer to Figure 1 , and combined with reference Figure 3 After determining that there is a defective mask 200 through defect detection, step S102 is performed to place the defective mask 200 in a sealed process chamber.

[0054] The process chamber is a chamber required for processing the problematic mask 200. The process chamber is a sealed chamber. Figure 8 , the problematic mask 200 is placed in a process chamber 301 of a device for repairing mask haze defects, wherein the process chamber 301 has a stage 302, and the problematic mask 200 is placed and fixed on the stage 302. In some embodiments, the stage 302 further has a heating unit 306, and the heating unit 306 can heat the problematic mask 200.

[0055] Next, continue to refer to Figure 1 , and combined with reference Figure 3 , proceed to step S103, heat the problematic mask 200, so that the organic fog defects 20 in the mask protective film (on the surface of the graphic area) of the problematic mask 200 are gasified to form gaseous organic matter, and the gaseous organic matter is distributed in the air in the mask protective film.

[0056] When the problematic mask 200 is heated, the organic mist defects 20 in the mask protective film will be vaporized to form gaseous organic matter when heated. The gaseous organic matter is distributed in the air in the mask protective film. The gaseous organic matter after the organic mist defects 20 are vaporized can be replaced or displaced out of the space surrounded by the annular frame 204 and the protective film 206 along with the air in the mask protective film in the subsequent process. The space surrounded by the annular frame 204 and the protective film 206 will be refilled with clean purified gas, thereby removing the organic mist defects 20 on the problematic mask 200.

[0057] When the problematic mask 200 is heated, the temperature reaches the vaporization temperature of the organic haze defect 20 and is lower than the melting temperature of the adhesive 203. While vaporizing the organic haze defect 20, the adhesive 203 can be prevented from melting and causing the adhesion between the annular frame 204 and the transparent substrate 201 to decrease. Studies have found that the temperature range at which the existing organic haze defect 20 can be vaporized is 30°C-80°C, while the melting temperature of the adhesive 203 is greater than 80°C. Therefore, in some embodiments, the temperature range at which the problematic mask is heated is 30°C-80°C.

[0058] In some embodiments, reference Figure 8 The problematic mask 200 may be heated by the heating unit 306 in the stage 302 in the process chamber 301 .

[0059] Next, continue to refer to Figure 1 , and combined with reference Figure 3 , perform step S104, supply purification gas to the process chamber, and part of the purification gas passes through the filter 205 on the problematic mask 200 and enters the mask protective film of the problematic mask 200 to replace or displace the air containing gaseous organic matter in the mask protective film.

[0060] The purge gas is a dry purge gas without particles. In one embodiment, the purge gas is N2 or clean dry air (CDA).

[0061] In one embodiment, a purge gas is supplied to the process chamber, and part of the purge gas passes through the filter 205 on the problematic mask 200 and then enters the mask protective film of the problematic mask 200, so as to replace or displace the air containing gaseous organic matter in the mask protective film. The process includes: after the purge gas is introduced into the process chamber, part of the purge gas passes through the filter 205 on the problematic mask 200 under the action of supply pressure, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, and then enters the mask protective film of the problematic mask 200; at the same time, the air containing gaseous organic matter in the mask protective film passes through the filter 205 on the problematic mask 200 and flows to the outside of the annular frame 204 under the action of the thrust of the purge gas entering from the filter 205, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, and so on. At the end of the process, the air containing gaseous organic matter in the mask protective film is replaced or displaced by the purge gas entering from the filter 205. Of course, in order to ensure the efficiency and rate of replacing or displacing the air containing gaseous organic matter outside the annular frame 204, the step of supplying the purified gas into the process chamber needs to be coordinated with the subsequent step of exhausting the process chamber. That is, in the present application, without removing the mask protective film on the mask, the organic fog defects formed in the mask protective film of the mask can be effectively removed, and the cost can be saved. In addition, there is no contact chemical and physical treatment during the repair process, so the shielding pattern will not be damaged, and the risk of mask scrapping can be reduced.

[0062] In some embodiments, the mode of supplying the purge gas to the process chamber includes a continuous supply mode or a cyclic supply mode. The continuous supply mode includes continuously supplying the purge gas to the process chamber. For details, please refer to Figure 4 In the first figure, in the continuous supply mode, the purge gas is continuously supplied to the process chamber during the time period from the start time point Ts1 to the end time point Te1. The cyclic supply mode includes a cyclic supply phase and a static phase, wherein the purge gas is supplied to the process chamber during the supply phase and the purge gas is stopped during the static phase. For details, please refer to Figure 5In the first figure, the cyclic supply mode includes a supply phase and a rest phase that are cyclically or alternately performed, each of the supply phases lasts for a first time T1, and each of the rest phases lasts for a second time T2, and the first time T1 may be less than, equal to, or greater than the second time T2. In a supply phase, the purge gas is continuously supplied to the process chamber during the first time period T1, and in the supply phase, part of the evolution gas is retained in the process chamber, and part of the purge gas passes through the filter 205 on the problem mask 200 under the action of the supply pressure, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, and then enters the mask protective film of the problem mask 200. At the same time, the air containing gaseous organic matter in the mask protective film will pass through the filter 205 on the problem mask 200 and flow to the outside of the annular frame 204 under the action of the thrust of the purge gas entering from the filter 205, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas. In a static stage, the purge gas is stopped from being supplied to the process chamber during the second time period T2. In this static stage, the purge gas in the process chamber will continue to pass through the filter 205 on the problematic mask 200 under the pressure difference between the inside and outside of the mask protective film and the free diffusion of gas, and then enter the mask protective film of the problematic mask 200. At the same time, the air containing gaseous organic matter in the mask protective film will continue to pass through the filter 205 on the problematic mask 200 under the thrust of the purge gas entering from the filter 205, the pressure difference between the inside and outside of the mask protective film, and the free diffusion of gas, and flow outside the annular frame 204. It should be noted that Figure 5 In the description, the cyclic supply mode only includes three supply phases and two rest phases which are cyclically or alternately performed as an example. In other embodiments, the supply phases and the rest phases can be other numbers.

[0063] In one embodiment, the purge gas supplied into the process chamber may have a certain temperature, and the temperature of the purge gas supplied into the process chamber may be equal to or lower than the heating temperature of the problematic mask 200 .

[0064] In one embodiment, reference Figure 8 The purge gas is supplied to the process chamber 301 through a purge gas process unit 303 in the device for repairing fog defects of a mask, and the purge gas process unit 303 is connected to the process chamber 301 through a purge gas supply port.

[0065] It should be noted that when performing step S104 , step S103 is also performed at the same time, that is, while the purge gas is supplied to the process chamber, the defective mask 200 is continuously heated at a set temperature.

[0066] Next, continue to refer to Figure 1 , and combined with reference Figure 3 , perform step S105 to exhaust the process chamber to discharge part of the purified gas containing gaseous organic matter in the process chamber.

[0067] The purpose of exhausting is that the gaseous organic matter will be replaced or displaced into the process chamber from the mask protective film of the problematic mask 200 in the aforementioned step S104, and part of the purified gas containing the gaseous organic matter can be discharged from the process chamber through exhausting.

[0068] In some embodiments, when performing step S104 , step S105 is simultaneously performed to improve the efficiency and rate of replacing or replacing the air containing gaseous organic matter in the mask protective film of the defective mask 200 .

[0069] In one embodiment, the exhaust mode of the process chamber includes a continuous exhaust mode or a cyclic exhaust mode. The continuous exhaust mode includes continuously exhausting the process chamber. For details, please refer to Figure 4 In the second figure, in the continuous exhaust mode, the process chamber is continuously exhausted from the start time point Ts2 to the end time point Te2. The cyclic exhaust mode includes a cyclic exhaust phase and a non-exhaust phase for the process chamber, wherein the process chamber is exhausted in the exhaust phase and is not exhausted in the non-exhaust phase. For details, please refer to Figure 5 In the second figure of FIG. 1 , the cyclic exhaust mode includes an exhaust phase and a non-exhaust phase that are performed cyclically or alternately, each of the exhaust phases lasts for a third time T3, and each of the non-exhaust phases lasts for a fourth time T4, and the third time T3 may be less than, equal to, or greater than the fourth time T4. In an exhaust phase, the process chamber is continuously exhausted during the time period of the third time T3. In a non-exhaust phase, the process chamber is not exhausted during the time period of the fourth time T4.

[0070] In some embodiments, continue to refer to Figure 4 When the mode for supplying the purification gas to the process chamber is the continuous supply mode, the mode for exhausting the process chamber is the continuous exhaust mode, the start time point Ts1 of the continuous supply mode is consistent with or the same as the start time point Ts2 of the continuous exhaust mode, and the end time point Te1 of the continuous supply mode is consistent with or the same as the end time point Te2 of the continuous exhaust mode.

[0071] In other embodiments, when the mode for supplying the purification gas to the process chamber is a circulation supply mode, the mode for exhausting the process chamber is a circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

[0072] In some embodiments, continue to refer to Figure 5 , the exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point and the end time point of the exhaust phase in the cyclic exhaust mode are consistent with (or the same as) the start time point and the end time point of the supply phase in the cyclic supply mode; the start time point and the end time point of the non-exhaust phase in the cyclic exhaust mode are consistent with (or the same as) the start time point and the end time point of the static phase in the cyclic supply mode.

[0073] In some other embodiments, continue to refer to Figure 6 or Figure 7 , the exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point of at least one exhaust phase in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply phase in the cyclic supply mode, and the start time point of the corresponding exhaust phase is advanced by a time △t, and the end time points of all exhaust phases in the cyclic exhaust mode are consistent with the end time points of the corresponding supply phases in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber (the magnitude of the negative pressure needs to be satisfied so as not to cause the protective film 206 on the problematic mask 200 to rupture, and the specific negative pressure is The negative pressure can be set according to the actual situation, and the adjustment of the negative pressure can be achieved by adjusting the extraction pressure), so that the air containing gaseous organic matter in the mask protective film of the problematic mask 200 can be replaced or displaced faster during the exhaust stage; the starting time points of all non-exhaust stages in the cyclic exhaust mode are consistent with the starting time points of the corresponding static stages in the cyclic supply mode, and the ending time point of at least one non-exhaust stage in the cyclic exhaust mode is earlier than the ending time point of the corresponding static stage in the cyclic supply mode, and the ending time point of the corresponding non-exhaust stage is advanced by a time △t, and the non-exhaust stage with an advanced ending time point is located before the exhaust stage with an advanced starting time point. In a specific embodiment, reference Figure 6 , there is an exhaust phase in the cyclic exhaust mode (such as Figure 6The start time point of the second exhaust phase from left to right in the cyclic supply mode) is earlier than the start time point of a corresponding supply phase in the cyclic supply mode. The start time point of the exhaust phase is advanced by a time Δt. A non-exhaust phase in the cyclic exhaust mode (such as Figure 6 The end time point of the first non-exhaust phase from left to right in the circulation supply mode is earlier than the end time point of the corresponding static phase in the circulation supply mode. The end time point of the non-exhaust phase is advanced by a time Δt, and the non-exhaust phase with an early end time point is located before the exhaust phase with an early start time point. In another specific embodiment, reference Figure 7 , the start time points of multiple (for example, two or more than two) exhaust stages in the cyclic exhaust mode are earlier than the start time point of at least one corresponding supply stage in the cyclic supply mode, the end time points of multiple (for example, two or more than two) non-exhaust stages in the cyclic exhaust mode are earlier than the end time points of the corresponding rest stages in the cyclic supply mode, and the non-exhaust stage with an earlier end time point is located before the exhaust stage with an earlier start time point.

[0074] In some embodiments, reference Figure 8 The process chamber 301 is exhausted through an exhaust unit 304 in the device for repairing fogging defects of a mask, and the exhaust unit 304 is connected to the process chamber 301 through an exhaust port.

[0075] In some embodiments, when the process chamber is exhausted, the problematic mask 200 is rotated so that the air containing gaseous organic matter in the mask protective film of the problematic mask 200 is replaced or displaced more quickly under the action of centrifugal force. The magnitude of the centrifugal force needs to be sufficient to not rupture the protective film 206 on the problematic mask 200. The specific magnitude of the centrifugal force can be adjusted according to actual conditions, and the adjustment of the centrifugal force can be achieved by adjusting the rotation speed of the mask.

[0076] In some embodiments, the process time of the method for repairing the haze defect of the mask is less than 72 hours, and the process time of the method for repairing the haze defect of the mask is less than 72 hours. Figure 1 The method for repairing the mask haze defect also includes: step S106, cooling the problematic mask in the process chamber after the process time is reached, and continuously supplying the purge gas during the cooling; step S107, after the cooling is completed, removing the problematic mask from the process chamber, and re-defect testing the problematic mask to confirm the removal effect of the organic haze defect. If the removal effect of the organic haze defect is not achieved through the test, the aforementioned process of repairing the mask haze defect needs to be performed again until the removal effect of the organic haze defect is achieved.

[0077] Another embodiment of the present application further provides a device for repairing fog defects of a mask, referring to Figure 8 ,include: A process chamber 301, wherein the process chamber 301 is used to place a defective mask 200 to be processed, wherein the mask protective film of the defective mask 200 has organic haze defects; A heating unit 306 is used to heat the defective mask 200 to gasify the organic mist defects in the mask protective film of the defective mask to form gaseous organic matter, and the gaseous organic matter is distributed in the air in the mask protective film; A purge gas supply unit 303 is used to supply purge gas to the process chamber 301, and part of the purge gas passes through the filter on the problematic mask 200 and enters the mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; The exhaust unit 304 is used to exhaust the process chamber 301 to discharge part of the purified gas containing gaseous organic matter in the process chamber 301 .

[0078] In some embodiments, the process chamber 301 has a stage 302 , and the problematic mask 200 is placed and fixed on the stage 302 .

[0079] In some embodiments, the heating unit 306 is located in the stage 302 , and the temperature range of the heating unit 306 heating the problematic mask 200 is 30° C.-80° C. In other embodiments, the heating unit may be located above or around the stage 302 .

[0080] In some embodiments, the purge gas supply unit 303 is connected to the process chamber 301 through corresponding supply pipes and purge gas supply ports. The purge gas supply unit 303 can control parameters such as on / off of the purge gas supply, the purge gas supply rate, and the purge gas temperature.

[0081] In some embodiments, the exhaust unit 304 is connected to the process chamber 301 through corresponding exhaust pipes and exhaust ports. The purge gas supply unit 303 can control parameters such as the on / off of exhaust and the exhaust rate.

[0082] In some embodiments, reference Fig. 9The device further includes a control unit 307, which is connected to the purge gas supply unit 303 and is used to control the mode in which the purge gas supply unit 303 supplies the purge gas to the process chamber 301. The purge gas supply mode includes a continuous supply mode or a cyclic supply mode. The continuous supply mode includes continuously supplying the purge gas to the process chamber 301 (refer to Figure 4 ), the cyclic supply mode includes a cyclic supply phase and a static phase, wherein the purge gas is supplied to the process chamber 301 during the supply phase, and the purge gas is stopped from being supplied to the process chamber 301 during the static phase (refer to Figure 5 , Figure 6 or Figure 7 ).

[0083] In some embodiments, continue to refer to Fig. 9 The control unit 307 is also connected to the exhaust unit 304, and is used to control the exhaust unit 304 to exhaust the process chamber 301 in a mode, wherein the exhaust mode includes a continuous exhaust mode or a cyclic exhaust mode, wherein the continuous exhaust mode includes continuously exhausting the process chamber 301 (refer to Figure 4 ), the cyclic exhaust mode includes cyclically performing an exhaust phase and a non-exhaust phase on the process chamber 301, wherein the process chamber 301 is exhausted in the exhaust phase, and the process chamber 301 is not exhausted in the non-exhaust phase (refer to Figure 5 , Figure 6 or Figure 7 ).

[0084] In some embodiments, continue to refer to Fig. 9 , and combined with reference Figure 4 When the control unit 307 controls the purge gas supply unit 303 to supply purge gas to the process chamber 301 in a continuous supply mode, the exhaust unit 304 is correspondingly controlled to exhaust the process chamber 301 in a continuous exhaust mode.

[0085] In some embodiments, continue to refer to Fig. 9 , and combined with reference Figure 5 , Figure 6 or Figure 7When the control unit 307 controls the purge gas supply unit 303 to supply the purge gas to the process chamber 301 in a circulation supply mode, the corresponding control unit 307 controls the exhaust unit 304 to exhaust the process chamber 301 in a circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

[0086] In some embodiments, reference Figure 5 The exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point and the end time point of the exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the supply phase in the cyclic supply mode; the start time point and the end time point of the non-exhaust phase in the cyclic exhaust mode are consistent with the start time point and the end time point of the static phase in the cyclic supply mode.

[0087] In other embodiments, reference Figure 6 or Figure 7 , the exhaust stage in the cyclic exhaust mode corresponds to the supply stage in the cyclic supply mode, and the non-exhaust stage in the cyclic exhaust mode corresponds to the static stage in the cyclic supply mode, including: the start time point of at least one exhaust stage in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply stage in the cyclic supply mode, and the end time points of all exhaust stages in the cyclic exhaust mode are consistent with the end time point of the corresponding supply stage in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber 301, so that the air containing gaseous organic matter in the mask protective film of the problematic mask 200 can be replaced or displaced faster during the exhaust stage; the start time points of all non-exhaust stages in the cyclic exhaust mode are consistent with the start time point of the corresponding static stage in the cyclic supply mode, the end time point of at least one non-exhaust stage in the cyclic exhaust mode is earlier than the end time point of the corresponding static stage in the cyclic supply mode, and the non-exhaust stage with an early end time point is located before the exhaust stage with an early start time point.

[0088] In some embodiments, continue to refer to Fig. 9 The control unit 307 is also connected to the heating unit 306 to control the heating temperature of the heating unit 306 .

[0089] In some embodiments, a driving unit (not shown in the figure) is further included, and the driving unit is connected to the carrier 302 and is used to drive the carrier 302 to rotate. When the exhaust unit 304 exhausts the process chamber, the driving unit drives the carrier 302 to rotate, thereby rotating the problematic mask 200 fixed on the carrier 302, so that the air containing gaseous organic matter in the mask protective film of the problematic mask 200 is replaced or displaced more quickly under the action of centrifugal force.

[0090] It should be noted that the terms "including" and "having" and their variations involved in this application are intended to cover non-exclusive inclusions. The terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence, unless the context clearly indicates otherwise. It should be understood that the data used in this way can be interchanged under appropriate circumstances. In addition, the embodiments in this application and the features in the embodiments can be combined with each other unless there is a conflict. In addition, in the above description, the description of well-known components and technologies is omitted to avoid unnecessary confusion of the concepts of this application. In the above-mentioned embodiments, each embodiment focuses on the differences from other embodiments, and the same / similar parts between the embodiments can be referred to (or referenced) with each other.

[0091] Although the present application has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present application. Any technical personnel in this field can use the methods and technical contents disclosed above to make possible changes and modifications to the technical solution of the present application without departing from the spirit and scope of the present application. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are within the protection scope of the technical solution of the present application.

Claims

1. A method for repairing fog defects of a mask, wherein the mask comprises a mask substrate and a mask protective film located on the upper surface of the mask substrate and sealing the mask substrate, wherein the mask substrate comprises a graphic area, wherein the graphic area comprises a light-transmitting area and a non-light-transmitting area, wherein the mask protective film comprises an annular frame located on the upper surface of the mask substrate and surrounding the graphic area, a protective film located on the top of the annular frame, and a filter located in the annular frame and connecting the inner and outer spaces of the annular frame, wherein: include: Performing defect detection on the mask, detecting that an organic haze defect exists on the surface of the graphic area in the mask protective film, and treating the mask having the organic haze defect as a defective mask; Placing the problematic mask in a closed process chamber; Heating the problematic mask to gasify the organic mist defects in the mask protective film of the problematic mask to form gaseous organic matter, wherein the gaseous organic matter is distributed in the air in the mask protective film; Supplying a purge gas into the process chamber, wherein a portion of the purge gas passes through a filter on the problematic mask and enters a mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; The process chamber is exhausted to discharge part of the purified gas containing gaseous organic matter in the process chamber.

2. The method for repairing a haze defect of a mask according to claim 1, characterized in that: The mask substrate includes a transparent substrate and a plurality of discrete opaque patterns on the upper surface of the transparent substrate. The annular frame is adhered to the upper surface of the edge area of ​​the mask substrate by adhesive. The temperature for heating the problematic mask is lower than the melting temperature of the adhesive.

3. The method for repairing a haze defect of a mask according to claim 2, characterized in that: The temperature range for heating the problematic mask is 30° C.-80° C.

4. The method for repairing a haze defect of a mask according to claim 1 or 2, characterized in that: The mode of supplying the purge gas into the process chamber includes a continuous supply mode or a cyclic supply mode, wherein the continuous supply mode includes continuously supplying the purge gas into the process chamber, and the cyclic supply mode includes cyclically performing a supply phase and a static phase, wherein the purge gas is supplied to the process chamber during the supply phase, and the supply of the purge gas to the process chamber is stopped during the static phase.

5. The method for repairing a haze defect of a mask according to claim 4, characterized in that: The exhaust mode for the process chamber includes a continuous exhaust mode or a cyclic exhaust mode, wherein the continuous exhaust mode includes continuously exhausting the process chamber, and the cyclic exhaust mode includes cyclically performing an exhaust phase and a non-exhaust phase on the process chamber, wherein the process chamber is exhausted in the exhaust phase and is not exhausted in the non-exhaust phase.

6. The method for repairing a haze defect of a mask according to claim 5, characterized in that: When the mode of supplying the purge gas into the process chamber is the continuous supply mode, the mode of exhausting the process chamber is the continuous exhaust mode.

7. The method for repairing a haze defect of a mask according to claim 5, characterized in that: When the mode for supplying the purification gas to the process chamber is the circulation supply mode, the mode for exhausting the process chamber is the circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

8. The method for repairing a haze defect of a mask according to claim 7, characterized in that: The exhaust phase in the circulating exhaust mode corresponds to the supply phase in the circulating supply mode, and the non-exhaust phase in the circulating exhaust mode corresponds to the static phase in the circulating supply mode, including: the start time point and the end time point of the exhaust phase in the circulating exhaust mode are consistent with the start time point and the end time point of the supply phase in the circulating supply mode; the start time point and the end time point of the non-exhaust phase in the circulating exhaust mode are consistent with the start time point and the end time point of the static phase in the circulating supply mode.

9. The method for repairing a haze defect of a mask according to claim 7, characterized in that: The exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point of at least one exhaust phase in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply phase in the cyclic supply mode, and the end time points of all exhaust phases in the cyclic exhaust mode are consistent with the end time point of the corresponding supply phase in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber, thereby allowing the air containing gaseous organic matter in the mask protective film of the problematic mask to be replaced or displaced more quickly during the exhaust phase; the start time points of all non-exhaust phases in the cyclic exhaust mode are consistent with the start time point of the corresponding static phase in the cyclic supply mode, and the end time point of at least one non-exhaust phase in the cyclic exhaust mode is earlier than the end time point of the corresponding static phase in the cyclic supply mode, and the non-exhaust phase with an early end time point is located before the exhaust phase with an early start time point.

10. The method for repairing a haze defect of a mask according to claim 5, characterized in that: When the process chamber is exhausted, the problematic mask is rotated so that the air containing gaseous organic matter in the mask protective film of the problematic mask is replaced or displaced more quickly under the action of centrifugal force.

11. The method for repairing a haze defect of a mask according to claim 4, characterized in that: The process time of the method for repairing the fogging defect of the mask is less than 72 hours. After the process time is reached, the defective mask in the process chamber is cooled. During the cooling, the purification gas is continuously supplied.

12. The method for repairing a haze defect of a mask according to claim 11, characterized in that: After cooling, the problematic mask is removed from the process chamber, and defect detection is performed again on the problematic mask to confirm the removal effect of the organic haze defect.

13. The method for repairing a haze defect of a mask according to claim 1 or 2, characterized in that: The components of the organic fog defects are one or more of benzene, ethylbenzene, toluene, o-xylene, p-xylene, styrene, 1,3,5-trimethylbenzene, 1,2,4-trimethylbenzene, dichloromethane, cyclopentane, isopropanol, ethyl acetate, propylene glycol methyl ether acetate, acetone, 1,2-butanone, and propylene glycol methyl ether, or are derived components after decomposition and polymerization of these components.

14. The method for repairing a haze defect of a mask according to claim 1, characterized in that: The purge gas is N2 or purified dry air.

15. The method for repairing a haze defect of a mask according to claim 1, characterized in that: The number of filters in the annular frame is one or more.

16. A device for repairing fogging defects of a mask, characterized in that: include: A process chamber, wherein the process chamber is used to place a problematic mask to be processed, wherein a mask protective film of the problematic mask has organic fogging defects; A heating unit, used for heating the problematic mask to gasify the organic mist defects in the mask protective film of the problematic mask to form gaseous organic matter, wherein the gaseous organic matter is distributed in the air in the mask protective film; A purge gas supply unit, used for supplying purge gas into the process chamber, wherein part of the purge gas passes through a filter on the problematic mask and enters the mask protective film of the problematic mask to replace or displace the air containing gaseous organic matter in the mask protective film; The exhaust unit is used to exhaust the process chamber to discharge part of the purified gas containing gaseous organic matter in the process chamber.

17. The device for repairing a haze defect of a mask according to claim 16, characterized in that: The process chamber has a stage in it, and the problematic mask is placed and fixed on the stage.

18. The device for repairing a haze defect of a mask according to claim 17, characterized in that: The heating unit is located in the carrier, and the temperature range of the heating unit heating the problematic mask is 30° C.-80° C.

19. The device for repairing fogging defects of a mask according to claim 16 or 17, characterized in that: The method further comprises a control unit, which is connected to the purge gas supply unit and is used for controlling a mode in which the purge gas supply unit supplies purge gas into the process chamber. The purge gas supply mode comprises a continuous supply mode or a circulation supply mode. The continuous supply mode comprises continuously supplying purge gas into the process chamber. The circulation supply mode comprises a cyclic supply phase and a rest phase, wherein the purge gas is supplied to the process chamber during the supply phase, and the supply of purge gas to the process chamber is stopped during the rest phase.

20. The device for repairing a haze defect of a mask according to claim 19, characterized in that: The control unit is also connected to the exhaust unit, and is used for controlling the mode of the exhaust unit when exhausting the process chamber, wherein the exhaust mode includes a continuous exhaust mode or a cyclic exhaust mode, wherein the continuous exhaust mode includes continuously exhausting the process chamber, and the cyclic exhaust mode includes cyclically performing an exhaust phase and a non-exhaust phase on the process chamber, wherein the process chamber is exhausted in the exhaust phase, and is not exhausted in the non-exhaust phase.

21. The device for repairing a haze defect of a mask according to claim 20, characterized in that: When the control unit controls the purge gas supply unit to supply purge gas to the process chamber in a continuous supply mode, the control unit correspondingly controls the exhaust unit to exhaust the process chamber in a continuous exhaust mode.

22. The device for repairing a haze defect of a mask according to claim 20, characterized in that: When the control unit controls the purge gas supply unit to supply purge gas into the process chamber in a circulation supply mode, the corresponding control unit controls the exhaust unit to exhaust the process chamber in a circulation exhaust mode, and the exhaust stage in the circulation exhaust mode corresponds to the supply stage in the circulation supply mode, and the non-exhaust stage in the circulation exhaust mode corresponds to the static stage in the circulation supply mode.

23. The device for repairing a haze defect of a mask according to claim 22, characterized in that: The exhaust phase in the circulating exhaust mode corresponds to the supply phase in the circulating supply mode, and the non-exhaust phase in the circulating exhaust mode corresponds to the static phase in the circulating supply mode, including: the start time point and the end time point of the exhaust phase in the circulating exhaust mode are consistent with the start time point and the end time point of the supply phase in the circulating supply mode; the start time point and the end time point of the non-exhaust phase in the circulating exhaust mode are consistent with the start time point and the end time point of the static phase in the circulating supply mode.

24. The device for repairing a haze defect of a mask according to claim 22, characterized in that: The exhaust phase in the cyclic exhaust mode corresponds to the supply phase in the cyclic supply mode, and the non-exhaust phase in the cyclic exhaust mode corresponds to the static phase in the cyclic supply mode, including: the start time point of at least one exhaust phase in the cyclic exhaust mode is earlier than the start time point of at least one corresponding supply phase in the cyclic supply mode, and the end time points of all exhaust phases in the cyclic exhaust mode are consistent with the end time point of the corresponding supply phase in the cyclic supply mode, so as to generate a certain negative pressure in the process chamber, thereby allowing the air containing gaseous organic matter in the mask protective film of the problematic mask to be replaced or displaced more quickly during the exhaust phase; the start time points of all non-exhaust phases in the cyclic exhaust mode are consistent with the start time point of the corresponding static phase in the cyclic supply mode, and the end time point of at least one non-exhaust phase in the cyclic exhaust mode is earlier than the end time point of the corresponding static phase in the cyclic supply mode, and the non-exhaust phase with an early end time point is located before the exhaust phase with an early start time point.

25. The device for repairing a haze defect of a mask according to claim 17, characterized in that: The invention also includes a driving unit, which is connected to the carrier and is used to drive the carrier to rotate. When the exhaust unit is exhausting the process chamber, the driving unit drives the carrier to rotate, thereby rotating the problematic mask fixed on the carrier, so that the air containing gaseous organic matter in the mask protective film of the problematic mask can be replaced or displaced more quickly under the action of centrifugal force.

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