Post-processing method of CIGS thin-film solar cell, electronic equipment and storage medium

Abstract

The invention relates to the field of solar cells, and provides a copper-indium-gallium-selenium thin-film solar cell post-processing method, electronic equipment and a storage medium, and the method comprises the steps: obtaining a pre-prepared semi-finished battery; placing the semi-finished battery under a light source for illumination; wherein the wavelength of the light source is in a first preset wavelength range, and the radiation intensity of the light source is in a first preset radiation intensity range. The invention relates to a CIGS (copper indium gallium selenide) solar cell and a preparation method thereof, which are used for overcoming the defects that the improvement of the structure and the preparation process of a CIGS material in the prior art is limited in the improvement of the power supply power of the cell and cannot meet the demand growth speed of a user. And the photoelectric conversion efficiency of the solar cell is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a post-processing method, electronic equipment, and storage medium for a copper indium gallium selenide thin-film solar cell. Background Art

[0002] Copper indium gallium selenide (CIGS) thin-film solar cells have the advantages of no attenuation, no hidden cracks, low temperature coefficient, good weak light effect, strong anti-shadow ability, power generation is less affected by the incident angle of sunlight, radiation resistance, high power generation per unit power, uniform and beautiful appearance, etc. It can be used as a substrate for rigid glass or flexible stainless steel foil or plastic material. It is a solar cell technology with great development prospects.

[0003] At present, the research direction of copper indium gallium selenide solar cells is mainly how to improve the rated power of the battery before leaving the factory. Conventional improvement plans all start from the structure and preparation process of CIGS materials, but such improvement methods have limited effect on the improvement of battery power supply and cannot meet the growth rate of user demand. Summary of the invention

[0004] The present invention provides a copper indium gallium selenide thin-film solar cell post-processing method, electronic equipment, and storage medium, which are used to solve the defect that the improvement of the structure and preparation process of CIGS materials in the prior art has limited effect on the improvement of the power supply of the battery and cannot meet the growth rate of user demand. In the solution of the present application, a light source with a specific wavelength and specific radiation intensity can be used to illuminate the solar cell to improve the photoelectric conversion efficiency of the solar cell.

[0005] The present invention provides a post-processing method for a copper indium gallium selenide thin-film solar cell, comprising:

[0006] Obtaining a pre-prepared semi-finished battery;

[0007] Placing the semi-finished battery under a light source for illumination;

[0008] Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

[0009] According to the post-processing method of the copper indium gallium selenide thin-film solar cell provided by the present invention, the semi-finished cell is placed under a light source for illumination, comprising:

[0010] The semi-finished battery is irradiated with light within a set time range.

[0011] The post-processing method of the copper indium gallium selenide thin film solar cell provided by the present invention also includes:

[0012] When it is determined that the illumination time for the semi-finished battery reaches a set time threshold, the illumination is stopped.

[0013] According to the post-processing method for copper indium gallium selenide thin-film solar cells provided by the present invention, after stopping the illumination, the method further comprises:

[0014] If it is determined that the performance index of the semi-finished battery does not meet the preset performance conditions, the semi-finished battery is determined to be unqualified.

[0015] The present invention also provides a copper indium gallium selenide thin film solar cell, which is prepared by applying any of the above copper indium gallium selenide thin film solar cell post-processing methods.

[0016] The copper indium gallium selenide thin-film solar cell provided by the present invention comprises a cell substrate, a barrier layer, a back electrode layer, a light absorption layer, a buffer layer, a window layer and a transparent conductive layer;

[0017] The blocking layer is used to prevent the elements in the battery substrate from diffusing to the light absorption layer;

[0018] The light absorbing layer is used to receive light energy from sunlight and convert the light energy into electrical energy;

[0019] The buffer layer is used to provide protection for the light absorbing layer;

[0020] The transparent conductive layer is used to collect the electric energy generated by the light absorbing layer and transmit the electric energy.

[0021] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, any of the above-mentioned copper indium gallium selenide thin-film solar cell post-processing methods is implemented.

[0022] The present invention also provides a non-transitory computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the post-processing method of any of the above-mentioned copper indium gallium selenide thin-film solar cells is implemented.

[0023] The present invention also provides a computer program product, comprising a computer program, which implements any of the above-mentioned copper indium gallium selenide thin-film solar cell post-processing methods when executed by a processor.

[0024] The present application provides a post-processing method for copper indium gallium selenide thin-film solar cells, which can be used to perform light treatment on semi-finished solar cells prepared in advance. The light treatment can help the intrinsic free carriers and carrier recombination centers inside the solar cell to be rearranged and reach a stable state, which can improve the photoelectric conversion efficiency of the solar cell when it is working. At the same time, the scheme of the present application can also determine the wavelength and radiation intensity of the light source during the light treatment according to the basic performance indicators of the prepared semi-finished battery. When the performance indicators of the semi-finished battery are different, the wavelength and radiation intensity of the light source selected during the light treatment are also different, so that the performance indicators of the battery can be improved in a more targeted manner. The present application also sets a threshold for the performance indicator. When the performance indicator of the battery is higher than the preset performance indicator threshold, it means that the light treatment has achieved the predetermined effect. At this time, the light treatment can be stopped, and the rated power of the obtained solar cell can be significantly improved compared with before the light treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a schematic flow chart of a post-processing method for a copper indium gallium selenide thin-film solar cell provided by an embodiment of the present invention;

[0027] Figure 2 is a schematic diagram of the performance improvement effect provided by an embodiment of the present invention;

[0028] Figure 3 is a schematic diagram of the structure of a copper indium gallium selenide thin film solar cell provided by an embodiment of the present invention;

[0029] Figure 4 It is a schematic diagram of the physical structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] Figure 1It is a schematic flow chart of a post-processing method for a copper indium gallium selenide thin-film solar cell provided in an embodiment of the present invention.

[0032] like Figure 1 As shown, this embodiment provides a post-processing method for a copper indium gallium selenide thin-film solar cell, comprising:

[0033] Step 101, obtaining a pre-prepared semi-finished battery;

[0034] Step 102, placing the semi-finished battery under a light source for illumination;

[0035] Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

[0036] The solar cell described in this embodiment can be a copper indium gallium selenide thin film solar cell, which is a thin-film photovoltaic device that uses copper indium gallium selenide (Cu(In, Ga)Se2, CIGS) as a light absorption layer to absorb sunlight and convert the light energy of sunlight into electrical energy.

[0037] The performance indicators in this embodiment refer to some parameters used to evaluate the performance of solar cells. In practical applications, these parameters include at least the battery power, specifically, the rated power. In implementation, the performance indicators may also include open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), photoelectric conversion efficiency (Eff) and maximum power (Pm), etc. In this embodiment, the performance of the solar cell can be comprehensively evaluated by the above performance indicators.

[0038] In practice, by placing the pre-prepared semi-finished cells under a specific light source for illumination, on the one hand, the fill factor of the solar cell can be improved. The fill factor, as one of the performance indicators for evaluating solar cells, reflects the performance of the solar cell at the maximum power point. Specifically, the fill factor is a comparative measure of the maximum power area contained in the IV characteristic curve of the solar cell and the area corresponding to the open circuit and short circuit. In the extreme case, when the solar cell is in an open circuit, the fill factor is the largest. In other words, the light bathing method can improve the shape of the IV characteristic curve of the solar cell to make it closer to the ideal rectangular shape, which is also equivalent to improving the fill factor of the solar cell.

[0039] In the post-processing method of copper indium gallium selenide thin-film solar cells provided in this embodiment, the semi-finished solar cells prepared in advance can be subjected to light treatment. The light treatment can help the intrinsic free carriers and carrier recombination centers inside the solar cell to be rearranged and reach a stable state, which can improve the photoelectric conversion efficiency of the solar cell when it is working. At the same time, the scheme of the present application can also determine the wavelength and radiation intensity of the light source during the light treatment according to the basic performance indicators of the prepared semi-finished battery. When the performance indicators of the semi-finished battery are different, the wavelength and radiation intensity of the light source selected for the light treatment are also different. In this way, the performance indicators of the battery can be improved in a more targeted manner. In the present application, a threshold value is also set for the performance indicator. When the performance indicator of the battery is higher than the preset performance indicator threshold value, it means that the light treatment has achieved the predetermined effect. At this time, the light treatment can be stopped, and the rated power of the obtained solar cell can be significantly improved compared with that before the light treatment.

[0040] In an exemplary embodiment, the wavelength and radiation intensity of the light source are determined by the following method:

[0041] Searching for a wavelength corresponding to the performance indicator of the semi-finished battery from a pre-constructed first correspondence table;

[0042] The radiation intensity corresponding to the performance indicator of the semi-finished battery is searched from a pre-constructed second correspondence table.

[0043] In practical applications, the wavelength range of the light source can be between 280 nanometers (nm) and 700 nanometers, and the radiation intensity range of the light source can be between 800 watts per square meter and 1200 watts per square meter. In implementation, the wavelength of ultraviolet light in sunlight is between 100nm and 390nm, and the wavelength of visible light is between 390nm and 770nm. It can be seen that the wavelength range of the light source in this embodiment basically overlaps with the wavelength range of ultraviolet light and visible light, and the radiation intensity of sunlight is about 1000 watts per square meter on average, which means that the radiation intensity of the light source in this embodiment basically overlaps with the radiation intensity of sunlight.

[0044] In this embodiment, by pre-constructing the first correspondence table and the second correspondence table, in actual applications, the corresponding wavelength and the corresponding radiation intensity can be directly found from the first correspondence table based on the collected performance indicators of the semi-finished batteries. In this way, the light source corresponding to the battery to be illuminated can be accurately determined, and the semi-finished batteries can be illuminated with a suitable light source, which can provide an illumination treatment effect.

[0045] In an exemplary embodiment, the method for determining the battery power of the semi-finished battery comprises the following steps:

[0046] Connecting the semi-finished battery to a detection circuit;

[0047] The detection circuit detects the output current and output voltage of the semi-finished battery;

[0048] The battery power of the semi-finished battery is determined based on the output current and the output voltage of the semi-finished battery.

[0049] In practical applications, the method for detecting the battery power of semi-finished batteries is to apply the electric power calculation formula, namely P=UI. In practical applications, when the semi-finished batteries are subjected to light treatment, the semi-finished batteries can also be connected to the detection circuit, so that the output current and output voltage of the battery can be detected in real time during the illumination process, and the battery power of the battery can be determined in real time, thereby improving the detection efficiency.

[0050] In practical applications, the semi-finished battery may not be connected to the detection circuit during illumination treatment. Instead, the battery power of the semi-finished battery may be determined by taking out the semi-finished battery and detecting the output current and output voltage once every illumination period. If the determined battery power does not meet the preset performance conditions, illumination continues; if it is determined that the battery power meets the preset performance conditions, illumination is stopped.

[0051] In an exemplary embodiment, a method for determining whether the performance index of the semi-finished battery after illumination meets the preset performance condition comprises the following steps:

[0052] Comparing the performance index of the semi-finished battery with a preset performance index threshold;

[0053] If the performance index of the semi-finished battery exceeds the preset performance index threshold, it is determined that the performance index of the semi-finished battery meets the preset performance condition.

[0054] In actual applications, when determining whether the performance indicators of semi-finished batteries meet the preset performance conditions, a preset threshold can be set for all performance indicators. For example, a preset power threshold is set for the battery power, an open circuit voltage threshold is set for the open circuit voltage, a short circuit current threshold is set for the short circuit current, etc. In implementation, all performance indicators can be compared with the corresponding preset thresholds. Only when each performance indicator exceeds the corresponding preset threshold can it be determined that the performance indicators of the semi-finished battery meet the preset performance conditions. It can also be set that most of the performance indicators exceed the corresponding preset thresholds to determine that the performance indicators of the semi-finished battery meet the preset performance conditions.

[0055] In an exemplary embodiment, placing the semi-finished battery under a light source for illumination comprises:

[0056] The semi-finished battery is irradiated with light within a set time range.

[0057] In an exemplary embodiment, when it is determined that the illumination time for the semi-finished battery reaches a set time threshold, the illumination is stopped.

[0058] In practical applications, an upper limit value can be set for the illumination time, that is, a time threshold can be set. For example, the set time threshold can be 240 minutes. The purpose of setting the time threshold is to avoid wasting illumination resources. In implementation, generally speaking, all semi-finished batteries can reach the preset performance index threshold within 240 minutes of illumination time, and thereafter the performance index rises slowly or no longer rises. Therefore, if it is determined that the illumination time of the semi-finished battery has reached the set time threshold, the illumination can be stopped to save resources and improve the preparation efficiency of solar cells.

[0059] In an exemplary embodiment, after stopping the illumination, the method further includes:

[0060] If it is determined that the performance index of the semi-finished battery does not meet the preset performance conditions, the semi-finished battery is determined to be unqualified.

[0061] In actual applications, if the performance indicators of the semi-finished battery still do not meet the preset performance conditions after the illumination time of the semi-finished battery reaches the set time threshold, it can be determined that the corresponding semi-finished battery cannot meet the preset performance conditions. At this time, it can be determined that the semi-finished battery is unqualified, which can improve the quality of solar cells when they leave the factory.

[0062] Figure 2 It is a schematic diagram of the performance improvement effect provided by an embodiment of the present invention.

[0063] like Figure 2 As shown, according to the curve graph, it can be seen that after the light treatment, the power of the solar cell is significantly improved. Not only that, other parameters can basically be improved to a certain extent. This shows that the means of light treatment of semi-finished cells in the solar cell preparation method provided in the present application can significantly improve the cell efficiency of the solar cell.

[0064] The copper indium gallium selenide thin film solar cell provided by the present invention is described below. The solar cell described below and the solar cell described above can be referred to each other.

[0065] The copper indium gallium selenide thin-film solar cell provided by the solution of the present application is prepared by applying the copper indium gallium selenide thin-film solar cell post-processing method described in any of the above embodiments.

[0066] Figure 3 It is a schematic diagram of the structure of a copper indium gallium selenide thin film solar cell provided by an embodiment of the present invention.

[0067] like Figure 3As shown, in an exemplary embodiment, the copper indium gallium selenide thin film solar cell includes a cell substrate, a barrier layer, a back electrode layer, a light absorption layer, a buffer layer, a window layer and a transparent conductive layer;

[0068] The blocking layer is used to prevent the elements in the battery substrate from diffusing to the light absorption layer;

[0069] The light absorbing layer is used to receive light energy from sunlight and convert the light energy into electrical energy;

[0070] The buffer layer is used to provide protection for the light absorbing layer;

[0071] The transparent conductive layer is used to collect the electric energy generated by the light absorbing layer and transmit the electric energy.

[0072] In an exemplary embodiment, a copper indium gallium selenide thin film solar cell may include a cell substrate, a barrier layer, a back electrode layer, a light absorbing layer, a buffer layer, a window layer, and a transparent conductive layer connected in sequence.

[0073] In an exemplary embodiment, the battery substrate may be made of soda-lime glass or stainless steel foil. The thickness of the soda-lime glass may be 2 to 4 mm, and the thickness of the stainless steel foil may be 25 to 50 μm.

[0074] The barrier layer may be made of titanium (Ti), and the thickness of the barrier layer may be 100 to 800 nanometers;

[0075] The back electrode layer may be made of molybdenum (Mo) and may have a thickness of 500 to 1000 nanometers;

[0076] The light absorption layer may be made of copper indium gallium selenide (CIGS) material, and the thickness of the light absorption layer may be 900 to 1800 nanometers;

[0077] The buffer layer may be made of zinc sulfide (ZnS), and the thickness of the buffer layer may be 40 to 80 nanometers;

[0078] The window layer may be made of magnesium-doped zinc oxide (MZO), and the thickness of the buffer layer may be 40 to 80 nanometers;

[0079] The transparent conductive layer may be made of aluminum-doped zinc oxide (AZO) material, and the thickness of the transparent conductive layer may be 300 to 800 nanometers.

[0080] In this embodiment, ZnS is used instead of traditional cadmium sulfide (CdS) as a buffer layer, without heavy metal cadmium (Cd) emission, and the band gap is increased, expanding the spectral response range; the ZnS film is prepared by a dry magnetron sputtering process, avoiding the emission of ammonia and thiourea caused by the traditional wet chemical water bath process for preparing the CdS film layer, and the process matching is better, which improves the production cycle; MZO is used instead of traditional intrinsic zinc oxide (ZnO) as a window layer, which increases the band gap, allowing light in a wider wavelength range to pass through, thereby increasing the spectral response range.

[0081] The specific implementation method of the copper indium gallium selenide thin film solar cell provided in this embodiment can be implemented with reference to the above embodiment, and will not be described in detail here.

[0082] Figure 4 An example of a physical structure diagram of an electronic device is shown in FIG. Figure 4 As shown, the electronic device may include: a processor 410, a communication interface 420, a memory 430 and a communication bus 440, wherein the processor 410, the communication interface 420 and the memory 430 communicate with each other through the communication bus 440. The processor 410 may call the logic instructions in the memory 430 to execute the copper indium gallium selenide thin film solar cell post-processing method, which includes:

[0083] Obtaining a pre-prepared semi-finished battery;

[0084] Placing the semi-finished battery under a light source for illumination;

[0085] Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

[0086] In addition, the logic instructions in the above-mentioned memory 430 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when it is sold or used as an independent product. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, RandomAccess Memory), disk or optical disk, etc. Various media that can store program codes.

[0087] On the other hand, the present invention further provides a computer program product, which includes a computer program. The computer program can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the copper indium gallium selenide thin-film solar cell post-processing method provided by the above methods, and the method includes:

[0088] Obtaining a pre-prepared semi-finished battery;

[0089] Placing the semi-finished battery under a light source for illumination;

[0090] Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

[0091] In another aspect, the present invention further provides a non-transitory computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the post-processing method of the copper indium gallium selenide thin-film solar cell provided by the above methods is implemented, and the method comprises:

[0092] Obtaining a pre-prepared semi-finished battery;

[0093] Placing the semi-finished battery under a light source for illumination;

[0094] Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

[0095] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, i.e., they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Those of ordinary skill in the art may understand and implement it without creative effort.

[0096] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods of each embodiment or some parts of the embodiment.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A post-processing method for copper indium gallium selenide thin film solar cells, characterized in that: include: Obtaining a pre-prepared semi-finished battery; Placing the semi-finished battery under a light source for illumination; Wherein, the wavelength of the light source is within a first preset wavelength range, and the radiation intensity of the light source is within a first preset radiation intensity range.

2. The post-processing method of copper indium gallium selenide thin film solar cell according to claim 1, characterized in that: Placing the semi-finished battery under a light source for illumination comprises: The semi-finished battery is irradiated with light within a set time range.

3. The post-processing method of copper indium gallium selenide thin film solar cell according to claim 2, characterized in that: Also includes: When it is determined that the illumination time for the semi-finished battery reaches a set time threshold, the illumination is stopped.

4. The post-processing method of copper indium gallium selenide thin film solar cell according to claim 3, characterized in that: After stopping the illumination, the method further comprises: If it is determined that the performance index of the semi-finished battery does not meet the preset performance conditions, the semi-finished battery is determined to be unqualified.

5. A copper indium gallium selenide thin film solar cell, characterized in that: The copper indium gallium selenide thin film solar cell is prepared by the post-processing method according to any one of claims 1 to 4.

6. The copper indium gallium selenide thin film solar cell according to claim 5, characterized in that: It includes a battery substrate, a barrier layer, a back electrode layer, a light absorbing layer, a buffer layer, a window layer and a transparent conductive layer; The blocking layer is used to prevent the elements in the battery substrate from diffusing to the light absorption layer; The light absorbing layer is used to receive light energy from sunlight and convert the light energy into electrical energy; The buffer layer is used to provide protection for the light absorbing layer; The transparent conductive layer is used to collect the electric energy generated by the light absorbing layer and transmit the electric energy.

7. A non-transitory computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the post-processing method of a copper indium gallium selenide thin-film solar cell according to any one of claims 1 to 4 is implemented.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the copper indium gallium selenide thin-film solar cell post-processing method as described in any one of claims 1 to 4 is implemented.

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