Perovskite laminated solar cell

Abstract

The embodiment of the invention provides a perovskite laminated solar cell. The perovskite laminated solar cell comprises a hole transport layer, a first doped barrier layer, a perovskite light absorption layer and an electron transport layer which are sequentially laminated along a set direction, wherein the doping element of the first doping barrier layer is one or more of lithium, sodium, potassium, rubidium, cesium, lead, copper, zinc, gallium, tin and calcium. According to the embodiment of the invention, the first doped barrier layer is arranged to effectively prevent ions in the perovskite light absorption layer from migrating to the hole transport layer, so that the problem that the performance of the cell is reduced due to reaction is solved; and on the other hand, doping elements in the first doping barrier layer can fill up cell performance degradation caused by perovskite A-site defects in the perovskite light absorption layer, play a role in passivating an interface between the perovskite light absorption layer and the hole transport layer, and improve cell efficiency and stability.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite stacked solar cell, a photovoltaic module, and a photovoltaic system. Background Art

[0002] With the vigorous development of the optoelectronics field, various photovoltaic technologies have been developed so far, such as Si-based solar cells, thin-film solar cells represented by copper indium gallium selenide, dye-sensitized solar cells, organic solar cells and perovskite solar cells (PSC). The commercialization of solar cells often requires high power conversion efficiency (PCE) and low-cost manufacturing processes as well as compatibility with flexible technologies. Perovskite solar cells (PSC) fully meet the commercialization needs due to their excellent optoelectronic performance, high photoelectric conversion efficiency, low solution preparation cost and simple process. They have attracted much attention in the third generation of solar cells and therefore have good application prospects.

[0003] The perovskite light-absorbing layer is an ionic compound. During the experiment, it was found that the anions and cations in the perovskite light-absorbing layer will undergo ion migration under the action of the electric field, causing the decomposition of the perovskite light-absorbing layer material, and the migrated ions will react with other functional layers, causing a decrease in battery performance, and then causing serious attenuation of battery performance.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the invention

[0005] The embodiments of the present application provide a perovskite tandem solar cell, a photovoltaic module, and a photovoltaic system to solve or alleviate one or more of the technical problems raised above.

[0006] In a first aspect, an embodiment of the present application provides a perovskite tandem solar cell, comprising: A hole transport layer, a first doped barrier layer, a perovskite light absorption layer, and an electron transport layer are sequentially arranged along a set direction; Wherein, the doping element of the first doping barrier layer is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

[0007] Optionally, it also includes: a second doped barrier layer, the second doped barrier layer being located between the perovskite light absorbing layer and the electron transport layer; The doping element of the second doping barrier layer is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

[0008] Optionally, the thickness of the first doping barrier layer is 0.1-20 nm; and / or The thickness of the second doping barrier layer is 0.1-20 nm.

[0009] Optionally, the doping concentration of the first doping barrier layer is 10 15 ~10 20 cm ~3 ; and / or The doping concentration of the second doping barrier layer is 10 15 ~10 20 cm ~3 .

[0010] Optionally, the material of the first doping barrier layer includes one or more of silicon dioxide, silicon nitride and aluminum oxide; and / or The material of the second doping barrier layer includes one or more of silicon dioxide, silicon nitride and aluminum oxide.

[0011] Optionally, along a direction away from the perovskite light absorbing layer, the first doping barrier layer includes a first doping layer and a second doping layer which are stacked; The doping elements of the first doping layer and the second doping layer are respectively and independently one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); Furthermore, the doping element of the first doping layer is not completely the same as the doping element of the second doping layer.

[0012] Optionally, it also includes: A third doped barrier layer, a first transparent conductive layer and a first electrode are sequentially stacked on the electron transport layer; The doping element of the third doping barrier layer is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

[0013] Optionally, it also includes: A bottom battery unit, the bottom battery unit is connected to the hole transport layer through an intermediate composite layer; Wherein, the bottom battery cell is one of a crystalline silicon bottom battery cell, a CIGS battery, a CdTe battery, a Sb2S3 battery and a Sb2Se3 battery; The intermediate composite layer is a discontinuous transparent conductive layer or a discontinuous metal oxide layer.

[0014] In a second aspect, an embodiment of the present application provides a photovoltaic module, which includes the perovskite tandem solar cell as described above.

[0015] In a third aspect, an embodiment of the present application provides a photovoltaic system, comprising the photovoltaic assembly as described above.

[0016] The above technical solution adopted in the embodiment of the present application may have the following advantages: By setting a first doped barrier layer between the perovskite light absorbing layer and the hole transport layer, on the one hand, the problem of battery performance degradation caused by the migration of ions in the perovskite light absorbing layer to the hole transport layer and the reaction can be effectively prevented; on the other hand, the doped elements in the first doped barrier layer can fill the battery performance degradation caused by the perovskite A-site defects in the perovskite light absorbing layer, play a role in passivating the interface between the perovskite light absorbing layer and the hole transport layer, and improve the battery efficiency and stability; in addition, the doped elements in the first doped barrier layer fill the perovskite A-site defects in the perovskite light absorbing layer and form more stable chemical bonds with the anions in the perovskite light absorbing layer, reduce the migration tendency of ions in the perovskite light absorbing layer, make the ion distribution in the perovskite light absorbing layer more uniform and stable, thereby effectively improving the battery stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0018] Figure 1 It is a schematic diagram of the structure of the perovskite tandem solar cell provided in Example 1 of the present application.

[0019] Figure 2 It is a schematic diagram of the structure of the perovskite tandem solar cell provided in Examples 2, 3, 6 and 7 of the present application.

[0020] Figure 3 It is a schematic diagram of the structure of the perovskite tandem solar cell provided in Examples 4 to 5 of the present application.

[0021] Description of reference numerals: 1. Hole transport layer; 2. Hole modification layer; 3. First doped barrier layer; 4. Perovskite light absorption layer; 5. Second doped barrier layer; 6. Electron transport layer; 7. Third doped barrier layer; 8. First transparent conductive layer; 9. Anti-reflection layer; 10. First electrode; 11. Second electrode; 12. Second transparent conductive layer; 13. P-type non- / microcrystalline silicon layer; 14. First intrinsic hydrogenated amorphous silicon layer; 15. Silicon substrate; 16. Second intrinsic hydrogenated amorphous silicon layer; 17. N-type non- / microcrystalline silicon layer; 18. Intermediate composite layer. DETAILED DESCRIPTION

[0022] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0023] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present application discloses the existence of the first element, component, region, layer or part.

[0024] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0027] Hereinafter, exemplary embodiments according to the present application will be described in more detail with reference to the accompanying drawings. It should be noted that these exemplary embodiments can be implemented in many different forms and should not be construed as being limited to the embodiments described herein.

[0028] The embodiment of the present application provides a perovskite tandem solar cell, comprising: A hole transport layer 1, a first doped barrier layer 3, a perovskite light absorption layer 4, and an electron transport layer 6 are sequentially arranged along a set direction; The doping element of the first doping barrier layer 3 is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

[0029] In this embodiment, by setting the first doped barrier layer 3 between the perovskite light absorbing layer 4 and the hole transport layer 1, on the one hand, the ions in the perovskite light absorbing layer 4 are effectively prevented from migrating to the hole transport layer 1 to react and cause the problem of battery performance degradation; on the other hand, the doping elements in the first doped barrier layer 3 can fill the perovskite A-site defects in the perovskite light absorbing layer 4 and cause the battery performance to decay, play a role in passivating the interface between the perovskite light absorbing layer 4 and the hole transport layer 1, and improve the battery efficiency and stability; the doping elements in the first doped barrier layer 3 fill the perovskite A-site defects in the perovskite light absorbing layer 4 and form more stable chemical bonds with the anions in the perovskite light absorbing layer 4, reduce the migration tendency of the ions in the perovskite light absorbing layer 4, make the ion distribution in the perovskite light absorbing layer 4 more uniform and stable, thereby effectively improving the battery stability.

[0030] In some embodiments, the perovskite tandem solar cell further includes a hole modification layer 2 , and the hole modification layer 2 is disposed between the hole transport layer 1 and the first doped barrier layer 3 .

[0031] In this embodiment, the first doped barrier layer 3 is located between the perovskite light absorbing layer 4 and the hole modification layer 2. The first doped barrier layer 3 effectively prevents ions in the perovskite light absorbing layer 4 from migrating into the hole modification layer 2 to react and cause a decrease in battery performance.

[0032] In an optional embodiment, the material in the perovskite light absorbing layer 4 includes an ABX3 structure; A is a monovalent cation; B is a divalent cation; X is a monovalent anion; in the ABX3 structure, A is a monovalent cation, including a mixture of one or several monovalent cations of cesium (Cs), rubidium (Rb), methylamine (CH3NH3), and formamidinium (CH2(NH2)2); B is a divalent cation, including a mixture of one or several divalent cations of lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); X is a monovalent anion, including a mixture of one or several monovalent anions of iodine (I), bromine (Br), chlorine (Cl), fluorine (F), and thiocyanate ion (SCN). Common perovskite materials include methylamine lead iodide (MAPbI3) and formamidinium lead iodide (FAPbI3).

[0033] In an optional embodiment, it also includes: The second doped barrier layer 5 is located between the perovskite light absorbing layer 4 and the electron transport layer 6; the doping element of the second doped barrier layer 5 is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

[0034] In this embodiment, by providing a second doped barrier layer 5 between the perovskite light absorbing layer 4 and the electron transport layer 6, on the one hand, it is effectively prevented that the ions in the perovskite light absorbing layer 4 migrate to the electron transport layer 6 to react, thereby causing the performance of the electron transport layer 6 to deteriorate; on the other hand, the doped elements in the second doped barrier layer 5 can fill the battery performance attenuation caused by the perovskite B-site defects in the perovskite light absorbing layer 4, and play a role in passivating the interface between the perovskite light absorbing layer 4 and the electron transport layer 6, reducing the formation of interface defects and non-radiative recombination processes, and improving the lifetime and collection efficiency of photogenerated carriers; in addition, the concentration of the doped elements in the second doped barrier layer 5 is relatively high, which can reduce the problem of diffusion of the B element in the perovskite light absorbing layer 4 into the second doped barrier layer 5, thereby effectively improving the battery stability.

[0035] The provision of the second doped barrier layer 5 can also improve the surface flatness and uniformity of the perovskite light absorbing layer 4, ensure the formation of a good interface contact between the electron transport layer 6 and the perovskite light absorbing layer 4, ensure the formation of a good interface contact between the electron transport layer 6 and the perovskite light absorbing layer 4, reduce the internal series resistance, and thus improve the output efficiency and stability of the battery.

[0036] The second doping barrier layer 5 can also prevent external water and oxygen from penetrating into the perovskite light absorption layer 4 and protect the perovskite light absorption layer 4, thereby improving the stability performance of the battery.

[0037] In an optional embodiment, the thickness of the first doping barrier layer 3 is 0.1-20 nm, for example, 0.1 nm, 10 nm, 20 nm; and / or The thickness of the second doping barrier layer 5 is 0.1-20 nm, for example, 0.1 nm, 10 nm, or 20 nm.

[0038] In this embodiment, when the thickness of the first doped barrier layer 3 and the second doped barrier layer 5 are respectively and independently less than 0.1 nm, the first doped barrier layer 3 cannot effectively prevent the migration of ions in the perovskite light absorbing layer 4, resulting in interface degradation, increasing the recombination rate of carriers, thereby reducing the photoelectric conversion efficiency and stability of the battery; when the thickness of the first doped barrier layer 3 and the second doped barrier layer 5 are respectively and independently greater than 20 nm, the series resistance inside the battery will increase, resulting in a decrease in the fill factor of the battery, reducing the current output and photoelectric conversion efficiency of the battery, and also causing carriers to be retained or recombinated in the barrier layer, reducing the short-circuit current density of the battery, and ultimately reducing the overall efficiency of the battery.

[0039] In an optional embodiment, the doping concentration of the first doping barrier layer 3 is 10 15 ~10 20 cm ~3 , for example, 10 15 cm ~3 , 10 18 cm ~3 , 10 20 cm ~3 ; and / or The doping concentration of the second doping barrier layer 5 is 10 15 ~10 20 cm ~3 , for example, 10 15 cm ~3 , 10 18 cm ~3 , 10 20 cm ~3 .

[0040] In this embodiment, the doping concentration in the first doping barrier layer 3 and the second doping barrier layer 5 is lower than 10 15 ~10 20 cm ~3 , reducing the ability to inhibit ion migration in the perovskite light-absorbing layer 4; and when the connected doping concentration is greater than 10 20 cm ~3 When this happens, the structure of the battery material will change and it will not be able to play the corresponding role.

[0041] In an optional embodiment, the material of the first doping barrier layer 3 includes one or more of silicon dioxide, silicon nitride and aluminum oxide; and / or The material of the second doping barrier layer 5 includes one or more of silicon dioxide, silicon nitride and aluminum oxide.

[0042] In this embodiment, silicon dioxide, aluminum oxide and silicon nitride all have excellent chemical stability and physical stability, can resist the influence of the external environment (such as moisture, oxygen, temperature, etc.), and protect the perovskite layer; in addition, silicon dioxide, aluminum oxide and silicon nitride are all good ion blocking materials, and all have a dense structure, which can effectively prevent the migration of cations in the perovskite light-absorbing layer 4 and prevent diffusion into other functional layers, thereby improving the stability and life of the battery.

[0043] In an optional embodiment, along a direction away from the perovskite light absorbing layer 4, the first doped barrier layer 3 includes a first doped layer and a second doped layer which are stacked; The doping elements of the first doping layer and the second doping layer are respectively and independently one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); Furthermore, the doping element of the first doping layer is not completely the same as the doping element of the second doping layer.

[0044] In this embodiment, the first doped barrier layer 3 can be a stacked multilayer structure. In the embodiment of the present application, the first doped barrier layer 3 can be a stacked first doped layer and a second doped layer, so that the ions encounter more resistance during the migration process, and the migration of ions in the perovskite light absorbing layer 4 is more effectively prevented, thereby enhancing the ion blocking effect; in addition, the multilayer structure can be doped with multiple elements, and the doping concentrations are not exactly the same, so as to supplement and passivate the defects of the perovskite light absorbing layer 4.

[0045] In an optional embodiment, it also includes: A third doped barrier layer 7, a first transparent conductive layer 8 and a first electrode 10 are sequentially stacked on the electron transport layer 6; the doping element of the third doped barrier layer 7 is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); The intermediate composite layer 18 is a discontinuous transparent conductive layer or a discontinuous metal oxide layer.

[0046] In the embodiment of the present application, by providing a third doping barrier layer 7 between the electron transport layer 6 and the first transparent conductive layer 8, it is possible to inhibit the migration of metal ions in the first electrode 10 into the perovskite light absorption layer 4, thereby inhibiting the damage to the perovskite light absorption layer 4 caused by the ion migration, thereby improving the stability performance of the battery.

[0047] In an optional embodiment, the doping concentration of the third doping barrier layer 7 is 10 15 ~1020 cm ~3 , for example, 10 15 cm ~3 , 10 18 cm ~3 , 10 20 cm ~3 .

[0048] In an optional embodiment, the thickness of the third doping barrier layer 7 is 0.1-20 nm, for example, 0.1 nm, 10 nm, or 20 nm.

[0049] In this embodiment, when the thickness of the third doped barrier layer 7 is less than 0.1 nm, the first doped barrier layer 3 cannot effectively prevent the migration of ions in the perovskite light absorbing layer 4, resulting in interface degradation and increasing the recombination rate of carriers, thereby reducing the photoelectric conversion efficiency and stability of the battery; when the thickness of the third doped barrier layer 7 is greater than 20 nm, the series resistance inside the battery will increase, resulting in a decrease in the fill factor of the battery, reducing the current output and photoelectric conversion efficiency of the battery, and causing carriers to be retained or recombine in the barrier layer, reducing the short-circuit current density of the battery, and ultimately reducing the overall efficiency of the battery.

[0050] In an optional embodiment, it also includes: A bottom battery unit, the bottom battery unit is connected to the hole transport layer 1 through the intermediate composite layer 18; Among them, the bottom cell unit is one of a crystalline silicon bottom cell unit, a CIGS cell, a CdTe cell, a Sb2S3 cell and a Sb2Se3 cell. CIGS cells, CdTe cells, Sb2S3 cells and Sb2Se3 cells are all different types of thin-film solar cells that convert solar photons into electrical energy by using different materials and processes. CIGS cells have high efficiency and low cost, and perform well in low light intensity environments. CdTe cells have relatively low production costs, and have high photoelectric conversion efficiency and good stability. Sb2S3 cells are an emerging type of solar cell, however, their efficiency and stability are relatively low. Sb2Se3 cells have a higher absorption coefficient and better photoelectric properties.

[0051] The following specific examples further illustrate the present application, but should not be construed as limiting the present application. Without departing from the spirit and substance of the present application, modifications or replacements made to the methods, steps or conditions of the present application are within the scope of the present application.

[0052] [Example 1] like Figure 1As shown, the specific structure of the perovskite tandem solar cell includes a bottom battery unit, an intermediate composite layer 18 and a hole transport layer 1, a hole modification layer 2, a first doped barrier layer 3, a perovskite light absorption layer 4, an electron transport layer 6, a first transparent conductive layer 8, an anti-reflection layer 9, and a first electrode 10 stacked from bottom to top; The bottom cell unit includes a second electrode 11, a second transparent conductive layer 12, a P-type non- / microcrystalline silicon layer 13, a first intrinsic hydrogenated amorphous silicon layer 14, a silicon substrate 15, a second intrinsic hydrogenated amorphous silicon layer 16, and an N-type non- / microcrystalline silicon layer 17, which are stacked in sequence from far away to close to the middle composite layer 18; The doping element in the first doping barrier layer 3 is potassium (K), and the doping concentration is 10 15 cm ~3 .

[0053] The specific preparation steps of perovskite tandem solar cells are as follows: S1: providing a bottom battery cell, and forming an intermediate composite layer 18 on the bottom battery cell, wherein the bottom battery cell is a crystalline silicon bottom battery cell; S2: using an evaporation method, depositing a hole transport layer 1 on the upper surface of the intermediate composite layer 18, wherein the material of the hole transport layer 1 is 2PACZ; S3: using an evaporation method to deposit a hole modification layer 2 on the hole transport layer 1, wherein the material of the hole modification layer 2 is Me~4PACz (4~(3,6~dimethyl~9H~carbazole~9~yl)butyl]phosphine; S4: forming a first doped barrier layer 3 on the hole modification layer 2 by an atomic deposition method, wherein the material of the first doped barrier layer 3 is silicon dioxide; S5: using an evaporation method to deposit a perovskite light absorbing layer 4 on the first doping barrier layer 3, wherein the material in the perovskite light absorbing layer 4 comprises an ABX3 structure; A is a monovalent cation; B is a divalent cation; and X is a monovalent anion; S6: using an evaporation method to deposit an electron transport layer 6 on the perovskite light absorption layer 4, wherein the material of the electron transport layer 6 is SnO2; S7: using an evaporation method to deposit a first transparent conductive layer 8 on the electron transport layer 6, wherein the material of the first transparent conductive layer 8 is indium tin oxide; S8: using an evaporation method to deposit an anti-reflection layer 9 on the first transparent conductive layer 8, wherein the material of the anti-reflection layer 9 is aluminum oxide; S9: forming a first electrode 10 by deposition on the anti-reflection layer 9 using an evaporation method, wherein the material of the first electrode 10 is Ag.

[0054] [Example 2] like Figure 2As shown, the difference from the perovskite tandem solar cell of Example 1 is that the specific structure of the perovskite tandem solar cell in Example 2 includes a bottom battery unit, an intermediate composite layer 18 and a hole transport layer 1, a hole modification layer 2, a first doped barrier layer 3, a perovskite light absorption layer 4, a second doped barrier layer 5, an electron transport layer 6, a first transparent conductive layer 8, an anti-reflection layer 9, and a first electrode 10 stacked from bottom to top; The bottom cell unit includes a second electrode 11, a second transparent conductive layer 12, a P-type non- / microcrystalline silicon layer 13, a first intrinsic hydrogenated amorphous silicon layer 14, a silicon substrate 15, a second intrinsic hydrogenated amorphous silicon layer 16, and an N-type non- / microcrystalline silicon layer 17, which are stacked in sequence from far away to close to the middle composite layer 18; The doping element in the first doping barrier layer 3 is potassium (K); the doping element in the second doping barrier layer 5 is lead (Pb), and the doping concentrations of the first doping barrier layer 3 and the second doping barrier layer 5 are both 10 18 cm ~3 .

[0055] The specific preparation steps of perovskite tandem solar cells are as follows: The difference from the method for preparing the perovskite tandem solar cell in Example 1 is that: S5: forming a second doped barrier layer 5 on the perovskite light absorbing layer 4 by an atomic deposition method, wherein the material of the second doped barrier layer 5 is silicon nitride; S6: using an evaporation method, depositing an electron transport layer 6 on the second doping barrier layer 5 , wherein the material of the electron transport layer 6 is SnO 2 .

[0056] [Example 3] like Figure 2 As shown, the difference from the perovskite tandem solar cell of Example 2 is that the specific structure of the perovskite tandem solar cell in Example 3 includes a bottom battery unit, an intermediate composite layer 18 and a hole transport layer 1, a hole modification layer 2, a first doped barrier layer 3, a perovskite light absorption layer 4, a second doped barrier layer 5, an electron transport layer 6, a first transparent conductive layer 8, an anti-reflection layer 9, and a first electrode 10 stacked from bottom to top; The bottom cell unit includes a second electrode 11, a second transparent conductive layer 12, a P-type non- / microcrystalline silicon layer 13, a first intrinsic hydrogenated amorphous silicon layer 14, a silicon substrate 15, a second intrinsic hydrogenated amorphous silicon layer 16, and an N-type non- / microcrystalline silicon layer 17, which are stacked in sequence from far away to close to the middle composite layer 18; The doping elements in the first doping barrier layer 3 are potassium (K) and lead (Pb); the doping elements in the second doping barrier layer 5 are potassium (K) and lead (Pb), and the doping concentrations of the first doping barrier layer 3 and the second doping barrier layer 5 are both 10 20cm ~3 .

[0057] [Example 4] like Figure 3 As shown, the difference from the perovskite tandem solar cell of Example 3 is that the specific structure of the perovskite tandem solar cell in Example 4 includes a bottom battery unit, an intermediate composite layer 18 and a hole transport layer 1, a hole modification layer 2, a first doped barrier layer 3, a perovskite light absorption layer 4, a second doped barrier layer 5, an electron transport layer 6, a third doped barrier layer 7, a first transparent conductive layer 8, an anti-reflection layer 9, and a first electrode 10 stacked from bottom to top; The bottom cell unit includes a second electrode 11, a second transparent conductive layer 12, a P-type non- / microcrystalline silicon layer 13, a first intrinsic hydrogenated amorphous silicon layer 14, a silicon substrate 15, a second intrinsic hydrogenated amorphous silicon layer 16, and an N-type non- / microcrystalline silicon layer 17, which are stacked in sequence from far away to close to the middle composite layer 18; The doping elements in the first doped barrier layer 3, the second doped barrier layer 5 and the third doped barrier layer 7 are potassium (K) and lead (Pb); the doping concentrations of the first doped barrier layer 3, the second doped barrier layer 5 and the third doped barrier layer 7 are all 10 20 cm ~3 .

[0058] The specific preparation steps of perovskite tandem solar cells are as follows: The difference from the method for preparing the perovskite tandem solar cell of Example 3 is that: S7: forming a third doped barrier layer 7 on the electron transport layer 6 by an atomic deposition method, wherein the material of the third doped barrier layer 7 is aluminum oxide; The first transparent conductive layer 8 is deposited on the third doping barrier layer 7 by an evaporation method, wherein the material of the first transparent conductive layer 8 is indium tin oxide.

[0059] [Example 5] like Figure 3 As shown, the difference from Example 4 is that the first doped barrier layer 3 used in the perovskite tandem solar cell in Example 5 includes a first doped layer (not shown in the figure) and a second doped layer (not shown in the figure) stacked in sequence in a direction away from the perovskite light absorbing layer 4, and the first doped layer is potassium (K), and the doped element of the second doped layer is lead (Pb).

[0060] [Example 6]~[Example 7] The difference between Example 6 and Example 3 is that the doping elements in the first doped barrier layer 3 are cesium (Cs) and tin (Sn); the doping elements in the second doped barrier layer 5 are cesium (Cs) and tin (Sn), and the doping concentrations of the first doped barrier layer 3 and the second doped barrier layer 5 are both 10 20 cm ~3 .

[0061] The difference between Example 7 and Example 3 is that the doping elements in the first doped barrier layer 3 are rubidium (Rb) and tin (Sn); the doping elements in the second doped barrier layer 5 are rubidium (Rb) and tin (Sn), and the doping concentrations of the first doped barrier layer 3 and the second doped barrier layer 5 are both 10 20 cm ~3 .

[0062] [Comparative Example 1] The difference from Example 4 is that the perovskite tandem solar cell in Comparative Example 1 does not use the first doped barrier layer 3 , the second doped barrier layer 5 and the third doped barrier layer 7 .

[0063] [Comparative Example 2] The difference from Example 4 is that the perovskite tandem solar cell in Comparative Example 2 uses element-free doped barrier layers to replace the first doped barrier layer 3, the second doped barrier layer 5 and the third doped barrier layer 7 respectively.

[0064] The following is a performance test of the perovskite stacked solar cells provided in Examples 1 to 7 of the present application and Comparative Examples 1 to 2, so as to obtain the open circuit voltage Voc, fill factor FF, short circuit current density Jsc, photoelectric conversion efficiency PCE and service life of the corresponding battery devices. The test results are shown in Table 1.

[0065] Table 1 Performance test results of perovskite tandem solar cells of Examples 1 to 7 and Comparative Examples 1 to 2

[0066] It can be seen from Table 1 that compared with comparative examples 1 to 2, the open circuit voltage Voc, fill factor FF, short circuit current density Jsc, photoelectric conversion efficiency PCE and service life of the perovskite stack solar cells of Examples 1 to 7 of the present application are significantly improved, which indicates that the first doped barrier layer, the second doped barrier layer and the third doped barrier layer provided in Examples 1 to 7 of the present application can effectively prevent the problem of ion migration in the perovskite light absorbing layer and the first electrode, and improve the photoelectric conversion efficiency and stability of the battery.

[0067] Combining Comparative Examples 1-2 with Example 1, it can be seen that the first doped barrier layer in Example 1 can effectively prevent the ions in the perovskite light absorbing layer from migrating to the hole modification layer, thereby improving the stability and efficiency of the battery.

[0068] Combining Comparative Examples 1-2 and Example 2, it can be seen that the first doped barrier layer and the second doped barrier layer in Example 2 can further prevent the ions in the perovskite light absorbing layer from migrating to the hole modification layer and the electron transport layer, thereby further improving the stability and efficiency of the battery.

[0069] Combining Comparative Examples 1-2 and Examples 3, 6 and 7, it can be seen that the first doped barrier layer and the second doped barrier layer in Examples 3, 6 and 7 are doped with two elements, which has a stronger ability to inhibit ion migration in the perovskite light absorbing layer, and can further supplement the defects in the perovskite light absorbing layer, improve the passivation effect, and thus improve the battery stability and efficiency.

[0070] Combining Comparative Examples 1-2 and Example 4, it can be seen that the third doped barrier layer can further block the migration of metal ions in the first electrode, reduce the damage of metal ions to other functional layers, and thus improve the battery stability and efficiency.

[0071] Combining Comparative Examples 1-2 and Example 5, it can be seen that the first doping barrier layer includes a first doping layer and a second doping layer, and the multi-layer structure is set up, which can improve the ability to inhibit ion migration and further improve the battery stability.

[0072] The embodiment of the present application may also provide a photovoltaic module (not shown), the photovoltaic module comprising the above perovskite tandem solar cell. The perovskite tandem solar cell may be connected in series and / or in parallel with one or more other solar cells in a preset manner. Among them, a plurality of cells may form a cell string, and adjacent cells may be connected together by string welding.

[0073] The embodiment of the present application can provide a photovoltaic system, including the photovoltaic components in any of the above embodiments. The advantages of the above photovoltaic components are also possessed by the photovoltaic system, which will not be repeated here. The above photovoltaic system has a wide range of applications, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be used in all fields where solar energy is required for power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components may form multiple photovoltaic arrays. The photovoltaic array is connected to a junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.

[0074] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0075] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0076] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0077] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite tandem solar cell, characterized in that: include: A hole transport layer (1), a first doped barrier layer (3), a perovskite light absorption layer (4), and an electron transport layer (6) are sequentially stacked along a set direction; Wherein, the doping element of the first doping barrier layer (3) is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

2. The perovskite tandem solar cell according to claim 1, characterized in that: Also includes: A second doped barrier layer (5), the second doped barrier layer (5) being located between the perovskite light absorbing layer (4) and the electron transport layer (6); The doping element of the second doping barrier layer (5) is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

3. The perovskite tandem solar cell according to claim 1, characterized in that: The thickness of the first doping barrier layer (3) is 0.1-20 nm; and / or The thickness of the second doping barrier layer (5) is 0.1-20 nm.

4. The perovskite tandem solar cell according to claim 1, characterized in that: The doping concentration of the first doping barrier layer (3) is 10 15 ~10 20 cm ~3 ; and / or The doping concentration of the second doping barrier layer (5) is 10 15 ~10 20 cm ~3 .

5. The perovskite tandem solar cell according to claim 1, characterized in that: The material of the first doping barrier layer (3) includes one or more of silicon dioxide, silicon nitride and aluminum oxide; and / or The material of the second doping barrier layer (5) includes one or more of silicon dioxide, silicon nitride and aluminum oxide.

6. The perovskite tandem solar cell according to claim 1, characterized in that: Along a direction away from the perovskite light absorbing layer (4), the first doping barrier layer (3) comprises a first doping layer and a second doping layer which are stacked; The doping elements of the first doping layer and the second doping layer are respectively and independently one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); Furthermore, the doping element of the first doping layer is not completely the same as the doping element of the second doping layer.

7. The perovskite tandem solar cell according to claim 1, characterized in that: Also includes: A third doped barrier layer (7), a first transparent conductive layer (8) and a first electrode (10) are sequentially stacked on the electron transport layer (6); The doping element of the third doping barrier layer (7) is one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca).

8. The perovskite tandem solar cell according to claim 1, characterized in that: Also includes: A bottom battery unit, the bottom battery unit being connected to the hole transport layer (1) via an intermediate composite layer (18); Wherein, the bottom battery cell is one of a crystalline silicon bottom battery cell, a CIGS battery, a CdTe battery, a Sb2S3 battery and a Sb2Se3 battery; The intermediate composite layer (18) is a discontinuous transparent conductive layer or a discontinuous metal oxide layer.

9. A photovoltaic module, characterized in that: The photovoltaic module comprises the perovskite tandem solar cell according to any one of claims 1 to 8.

10. A photovoltaic system, characterized in that: The photovoltaic system comprises the photovoltaic assembly as claimed in any one of claims 9.

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