Electronic device and method of forming conductive traces

Abstract

An electronic device includes conductive traces disposed on at least a first major surface of a substrate. The conductive trace includes sintered metal nanoparticles. The conductive trace has a line resistance of about 1 ohm / mm or less. In some aspects, a method may include disposing a plurality of metal nanoparticles on an absorber layer. In some aspects, a method may include disposing a plurality of metal nanoparticles on a first layer and disposing an absorber layer on a first surface region such that a minimum distance between the absorber layer and the plurality of metal nanoparticles is in a range of about 100 nanoparticles to about 5 millimeters. The method includes impacting the absorbing layer with electromagnetic radiation. The method includes transferring heat from the absorber layer to sinter the plurality of metal nanoparticles to form the conductive trace.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority under 35 U.S.C. §119 to U.S. Provisional Application No. 63 / 337,258, filed on May 2, 2022, and the entire text of this provisional application is hereby relied upon and incorporated by reference. Technical Field

[0003] The present disclosure relates generally to electronic devices and methods of forming conductive traces, and more particularly to electronic devices including conductive traces and methods of forming conductive traces including sintered metal nanoparticles. Background Art

[0004] Glass-based substrates are commonly used, for example, in display devices such as liquid crystal displays (LCDs), electrophoretic displays (EPDs), organic light emitting diode displays (OLEDs), plasma display panels (PDPs), laser phosphor displays (LPDs), etc. Glass-based substrates are also used in other device applications such as photovoltaics, lighting, sensors, and flexible electronics. Electronic devices including displays, photovoltaics, lighting, sensors, and flexible electronics include conductive traces.

[0005] It is desirable to form conductive traces from nanoparticles without damaging other components of an electronic device. It is desirable to form conductive traces with low line resistance and / or low contact resistance. Summary of the invention

[0006] An electronic device and method of forming a conductive trace are presented herein. The conductive trace in the electronic device may include a low resistivity (e.g., a contact resistance of about 0.5 ohms or less, a line resistance of about 1 ohm / mm or less), which may improve the efficiency of the electronic device. The conductive trace in the electronic device may include good adhesion to the rest of the electronic device (e.g., about 4B or more, about 5B), which may improve the reliability and / or durability of the electronic device. For example, good adhesion and / or low resistivity may be achieved by sintering nanoparticles attached to the surface of the electronic device. In addition, the above properties may be used to provide a conductive trace comprising sintered nanoparticles, which may be disposed on a substrate with one or more layers disposed therebetween.

[0007] The method of forming a conductive trace may include striking an absorbing layer with electromagnetic radiation and transferring heat to a plurality of metal nanoparticles to sinter the plurality of metal nanoparticles. Indirect heating of the plurality of metal nanoparticles with electromagnetic radiation rather than directly heating the plurality of metal nanoparticles with electromagnetic radiation means that the metal nanoparticles at the surface of the resulting electronic device are sintered, which reduces resistivity and increases adhesion. Sintering a plurality of metals by striking the absorbing layer with electromagnetic radiation can reduce processing time, which can reduce the cost of manufacturing the final electronic device. Striking the absorbing layer with electromagnetic radiation can allow targeted heating to be located in areas close to the plurality of metal nanoparticles, which can reduce the incidence of damage to other components of the resulting electronic device caused by the sintering process. Striking the absorbing layer with electromagnetic radiation means that the same electromagnetic radiation source and absorbing layer can be used for various types of metal nanoparticles, which makes the process more versatile by reducing the need to optimize conditions for different types of metal nanoparticles. In addition, striking the absorbing layer with electromagnetic radiation means that direct line of sight to the plurality of metal nanoparticles is not required, which can allow the formation of conductive traces having complex shapes and / or as part of a multi-component electronic device.

[0008] Some sample aspects of the present disclosure are described below, with the understanding that any features of the various aspects may be used alone or in combination with each other.

[0009] Aspect 1. An electronic device, comprising:

[0010] a substrate comprising a first major surface; and

[0011] A conductive trace is disposed on at least the first major surface of the substrate, the conductive trace comprising sintered metal nanoparticles, the conductive trace comprising a line resistance of about 1 ohm / mm or less.

[0012] Aspect 2. The electronic device of aspect 1, further comprising an absorption layer located between the conductive trace and the first major surface of the substrate.

[0013] Aspect 3. The electronic device of aspect 2, wherein the adhesion of the conductive trace to the absorbent layer is about 4B or greater.

[0014] Aspect 4. The electronic device of any one of aspects 1 to 3, wherein the conductive trace extends around an edge of the substrate such that a portion of the conductive trace is further disposed on a second major surface of the substrate opposite the first major surface.

[0015] Aspect 5. The electronic device of any one of aspects 1 to 4, wherein an electrically insulating layer is disposed on at least a portion of the conductive trace.

[0016] Aspect 6. The electronic device of any one of claims 1 to 4, further comprising a pair of electrodes, the conductive trace contacting each electrode, wherein a contact resistance of the conductive trace is about 0.5 ohms or less.

[0017] Aspect 7. The electronic device of aspect 6, wherein the contact resistance ranges from about 0.1 ohms to about 0.3 ohms.

[0018] Aspect 8. The electronic device of any one of aspects 1 to 7, wherein the line resistance ranges from about 0.2 ohms / mm to about 0.5 ohms / mm.

[0019] Aspect 9. The electronic device of any one of aspects 1 to 8, wherein a ratio of a line resistance of the conductive trace to a line resistance of a bulk comprising the same material as the conductive trace is in a range of 1 to about 5.

[0020] Aspect 10. The electronic device of aspect 9, wherein a ratio of a line resistance of the conductive trace to a line resistance of a bulk including the same material as the conductive trace is in a range from about 1.1 to about 3.

[0021] Aspect 11. The electronic device according to any one of Aspects 1 to 10, wherein the substrate comprises a glass-based substrate or a ceramic-based substrate.

[0022] Aspect 12. The electronic device of any one of aspects 1 to 11, wherein the conductive trace consists essentially of silver or copper.

[0023] Aspect 13. A method of forming a conductive trace, the method comprising:

[0024] Disposing a plurality of metal nanoparticles on the absorption layer;

[0025] impinging the absorbing layer with electromagnetic radiation; and

[0026] Heat is transferred from the absorber layer to the plurality of metal nanoparticles to sinter the plurality of metal nanoparticles to form the conductive traces.

[0027] Aspect 14. The method of aspect 13, wherein the absorption layer comprises a glass-based material or a ceramic-based material.

[0028] Aspect 15. The method of aspect 13, wherein the absorber layer comprises indium tin oxide.

[0029] Aspect 16. The method of any one of aspects 13 to 15, wherein the adhesion of the conductive trace to the absorber layer is about 4B or greater.

[0030] Aspect 17. The method of any one of aspects 13, 15 or 16, further comprising disposing an absorption layer on the substrate.

[0031] Aspect 18. A method of forming a conductive trace, the method comprising:

[0032] disposing a plurality of metal nanoparticles on a first surface region of the first layer;

[0033] Disposing an absorption layer on the first surface region such that a minimum distance between the absorption layer and the plurality of metal nanoparticles along a direction parallel to the first surface region ranges from about 100 nanometers to about 5 millimeters;

[0034] impinging the absorbing layer with electromagnetic radiation; and

[0035] Heat is transferred from the absorber layer to the plurality of metal nanoparticles through the first layer to sinter the plurality of metal nanoparticles to form the conductive traces.

[0036] Aspect 19. The method of aspect 18, further comprising removing the absorber layer after forming the conductive trace.

[0037] Aspect 20. The method of any one of aspects 18 to 19, wherein the absorber layer comprises indium tin oxide.

[0038] Aspect 21. The method of any one of aspects 18 to 20, wherein the first layer is disposed on a substrate.

[0039] Aspect 22. The method of any one of aspects 18 to 21, wherein the first layer comprises a glass-based material or a ceramic-based material.

[0040] Aspect 23. The method of aspect 17 or aspect 21, wherein the substrate comprises a glass-based material or a ceramic-based material.

[0041] Aspect 24. A method as described in any of Aspects 17, 21 or 23, wherein a plurality of metal nanoparticles are disposed on a first major surface of the substrate, an edge of the substrate, and a second major surface of the substrate opposite to the first major surface, wherein the impact absorbing layer and the heat transfer form conductive traces arranged on the first major surface, the edge, and the second major surface such that the conductive traces surround the edge of the substrate.

[0042] Aspect 25. The method of any one of aspects 13 to 24, wherein the conductive trace is attached to a pair of electrodes, and the conductive trace comprises a contact resistance of about 0.5 ohms or less.

[0043] Aspect 26. The method of aspect 25, wherein the contact resistance is in a range of about 0.1 ohms to about 0.3 ohms.

[0044] Aspect 27. The method of any one of aspects 13 to 26, wherein the conductive trace comprises a line resistance of about 1 ohm / mm or less.

[0045] Aspect 28. The method of aspect 27, wherein the line resistance ranges from about 0.2 ohms / mm to about 0.5 ohms / mm.

[0046] Aspect 29. The method of any one of aspects 13 to 26, wherein a ratio of a line resistance of the conductive trace to a line resistance of a bulk comprising the same material as the plurality of metal nanoparticles ranges from 1 to about 5.

[0047] Aspect 30. The method of any of Aspect 29, wherein a ratio of a line resistance of the conductive trace to a line resistance of a bulk comprising the same material as the plurality of metal nanoparticles ranges from about 1.1 to about 3.

[0048] Aspect 31. The method of any one of aspects 13 to 30, wherein the electromagnetic radiation comprises one or more wavelengths, the one or more wavelengths being about 700 nanometers or longer.

[0049] Aspect 32. The method of aspect 31, wherein the one or more wavelengths are in the range of about 1 micron to about 5 microns.

[0050] Aspect 33. The method of aspect 31, wherein the one or more wavelengths are in the range of about 5 microns to about 12 microns.

[0051] Aspect 34. A method as described in any of Aspects 31 to 33, wherein the absorbing layer has an absorbance of about 20% or more for at least one of the one or more wavelengths, and the plurality of metal nanoparticles have an absorbance for at least one wavelength that is less than the corresponding absorbance of the absorbing layer.

[0052] Aspect 35. The method of aspect 34, wherein the absorbance of the absorbing layer at at least one wavelength is about 40% or more.

[0053] Aspect 36. The method of any one of aspects 13 to 35, wherein impinging the absorbing layer with the electromagnetic radiation does not impinge on at least a portion of the plurality of metal nanoparticles.

[0054] Aspect 37. The method of aspect 36, wherein impinging the absorbing layer with electromagnetic radiation does not impinge on any of the plurality of metal nanoparticles.

[0055] Aspect 38. The method of any one of aspects 29 to 37, wherein the electromagnetic radiation impinging the absorbing layer comprises a power density ranging from about 100 Watts / cm2 to about 50,000 Watts / cm2.

[0056] Aspect 39. The method of any one of aspects 13 to 38, wherein impinging the absorbing layer with electromagnetic radiation occurs for about 30 seconds to about 120 minutes.

[0057] Aspect 40. The method of any one of aspects 13 to 39, wherein the plurality of metal nanoparticles comprises one or more of silver, gold, aluminum, copper, nickel, platinum, or tin.

[0058] Aspect 41. The method of aspect 40, wherein the plurality of metal nanoparticles consist essentially of silver or copper.

[0059] Aspect 42. The method of any one of aspects 13 to 41, wherein the median largest dimension of the plurality of metal nanoparticles is in a range from about 10 nanometers to about 120 nanometers.

[0060] Aspect 43. The method of aspect 42, wherein the median largest dimension of the plurality of metal nanoparticles is in a range from about 50 nanometers to about 100 nanometers.

[0061] Aspect 44. The method of any one of aspects 13 to 43, wherein providing a plurality of metal nanoparticles comprises providing an ink comprising a solvent and a plurality of metal nanoparticles, wherein a concentration of the plurality of metal nanoparticles in the ink ranges from about 10 wt % to about 70 wt %.

[0062] Aspect 45. The method of any of aspects 13-44, wherein the conductive trace comprises a thickness ranging from about 0.1 microns to about 10 microns.

[0063] Aspect 46. The method of any one of aspects 13 to 45, wherein the conductive trace comprises a width ranging from about 1 micron to about 100 microns.

[0064] Aspect 47. The method of any one of aspects 13 to 46, further comprising providing an electrically insulating layer on at least a portion of the conductive trace.

[0065] Aspect 48. The method of any one of Aspects 13 to 47, further comprising, before impacting the absorption layer but after disposing the plurality of metal nanoparticles, heating the plurality of metal nanoparticles at a first temperature of about 50°C to about 150°C for a first time period of about 10 minutes to about 2 hours.

[0066] Aspect 49. The method of aspect 48, wherein the first period of time is in the range of about 30 minutes to about 1 hour.

[0067] Aspect 50. The method of any one of aspects 13 to 49, further comprising, after forming the conductive trace, heating the conductive trace at a second temperature of about 150° C. to about 200° C. for about 30 minutes to about 2 hours. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] The foregoing and other features and advantages of the embodiments of the present disclosure may be better understood when the following aspects are read with reference to the accompanying drawings, in which:

[0069] Figure 1 is a partial schematic cross-sectional view of an example electronic device according to aspects of the disclosure, for example Figure 2 Vision Figure 1 ;

[0070] Figures 2 to 3 is along Figure 1 A schematic plan view of the electronic device taken along line 2-2 of ;

[0071] Figure 4 is a schematic cross-sectional view of an example electronic device according to aspects of the present disclosure;

[0072] Figure 5 is a flow chart illustrating an example method of forming a conductive trace;

[0073] Figures 6 to 16 schematically illustrating steps in a method of forming a conductive trace;

[0074] Fig.17 It is a graph showing how the absorbance of a material changes with the wavelength of light;

[0075] Fig.18 is a graph of temperature versus time;

[0076] Fig.19 a focused ion beam image schematically showing a cross-sectional view of an electronic device; and

[0077] Figures 20 to 21 A scanning electron microscope image of the electronic device is schematically shown.

[0078] Throughout the disclosure, the drawings are used to emphasize certain aspects. Therefore, unless otherwise explicitly stated, the relative sizes of the various regions, parts, and substrates shown in the drawings should not be assumed to be proportional to their actual relative sizes. DETAILED DESCRIPTION

[0079] The exemplary aspects will now be described more fully with reference to the accompanying drawings which illustrate exemplary aspects. The same reference numerals are used wherever possible in the drawings to refer to the same or similar components. However, the claims may include many different aspects of various aspects and should not be interpreted as being limited to the aspects set forth herein.

[0080] Figures 1 to 4 Schematic diagrams of electronic devices 101, 301, and 401 according to aspects of the present disclosure are illustrated. Figures 1 to 4 As shown, example aspects of electronic device 101, 301, or 401 include conductive traces 113 and an absorbent layer (eg, Figures 1 to 2 and the substrate 103 or Figures 3 to 4Unless otherwise noted, a discussion of features of one aspect of a conductive trace and / or electronic device may be equally applicable to corresponding features of any aspect of the present disclosure. For example, the same element number described throughout the present disclosure may indicate that, in some aspects, the identified features are identical to each other, and unless otherwise noted, a discussion of identified features of one aspect may be equally applicable to identified features of any other aspect of the present disclosure.

[0081] In terms of Figures 1 to 4 As shown, the substrate 103 of the electronic device 101, 301 and / or 401 may include a glass-based substrate or a ceramic-based substrate. For example, the substrate 103 may include a glass-based material and / or a ceramic-based material having a pencil hardness of 8H or higher, such as 9H or higher. As used herein, the pencil hardness is measured using ASTM D 3363-20 with a standard lead graded pencil. Throughout the disclosure, the elastic modulus (e.g., Young's modulus) is measured using ISO 527-1:2019. In some aspects, the substrate 103 may have an elastic modulus of about 1 gigapascal (GPa) or greater, about 10 GPa or greater, about 30 GPa or greater, about 50 GPa or greater, about 100 GPa or less, about 80 GPa or less, about 75 GPa or less. In some aspects, the elastic modulus of the substrate 103 can be in the range of about 1 GPa to about 100 GPa, about 10 GPa to about 80 GPa, about 30 GPa to about 80 GPa, about 50 GPa to about 75 GPa, or any range or sub-range therebetween. In some aspects, the substrate 103 can be optically transparent. As used herein, "optically transparent" or "optically clear" means that the average transmittance through a 1.0 mm thick sheet of material is 70% or higher in the wavelength range of 400 nm to 700 nm. In various aspects, the "optically transparent material" or "optically clear material" can have an average transmittance of 75% or more, 80% or more, 85% or more, or 90% or more, 92% or more, 94% or more, 96% or more through a 1.0 mm thick sheet of material in the wavelength range of 400 nm to 700 nm. The average transmittance in the wavelength range of 400 nm to 700 nm is calculated by measuring the transmittance of integer wavelengths from about 400 nm to about 700 nm and averaging the measured results. In a further aspect, Figures 1 to 4 As shown, substrate 103 may include a single layer. In further aspects, although not shown, the substrate may include more than one layer comprising one or more of a glass-based material, a ceramic-based material, or other materials.

[0082] "Glass-based" materials described herein include glass and glass ceramics, wherein the glass ceramics have one or more crystalline phases and an amorphous residual glass phase. Glass-based materials (e.g., glass-based substrates) may include amorphous materials (e.g., glass) and optionally one or more crystalline materials (e.g., ceramics). Amorphous materials and glass-based materials may be strengthened. As used herein, the term "strengthening" may refer to materials that have been chemically strengthened, for example, through ion exchange of larger ions with smaller ions on the surface of a substrate. However, other strengthening methods, such as thermal tempering, or using the mismatch of thermal expansion coefficients between substrate portions to produce compressive stress and central tension regions, may be used to form a strengthened substrate. Exemplary glass-based materials that may or may not contain lithium include soda-lime glass, alkali-aluminosilicate glass, alkali-containing borosilicate glass, alkali-containing aluminum borosilicate glass, alkali-containing phosphosilicate glass, and alkali-containing aluminum phosphosilicate glass. "Glass-ceramics" include materials produced by controlled crystallization of glass. In various aspects, glass-ceramics have a crystallinity of about 1% to about 99%. Exemplary aspects of suitable glass ceramics may include Li2O-Al2O3-SiO2 system (i.e., LAS system) glass ceramics, MgO-Al2O3-SiO2 system (i.e., MAS system) glass ceramics, ZnO×Al2O3×nSiO2 (i.e., ZAS system) and / or glass ceramics including a main crystalline phase of β-quartz solid solution, β-spodumene, cordierite, petalite and / or lithium disilicate. The glass ceramic substrate may be strengthened by a chemical strengthening process, for example, the MAS system glass ceramic material may be strengthened in a Li2SO4 molten salt.

[0083] The "ceramic-based" described herein includes ceramics and glass-ceramics, wherein the glass-ceramics have one or more crystalline phases and an amorphous residual glass phase. The ceramic-based material can be strengthened (e.g., chemically strengthened). In some aspects, the ceramic-based material can be formed by heating the glass-based material to form a ceramic (e.g., crystalline) portion. In further aspects, the ceramic-based material can include one or more nucleating agents that can promote the formation of a crystalline phase. In some aspects, the ceramic-based material can include one or more oxides, nitrides, oxynitrides, carbides, borides, and / or silicides. Example aspects of ceramic oxides include zirconium oxide (ZrO2), zircon (ZrSiO4), alkali metal oxides (e.g., sodium oxide (Na2O)), alkaline earth metal oxides (e.g., magnesium oxide (MgO)), titanium dioxide (TiO2), hafnium oxide (Hf2O), yttrium oxide (Y2O3), iron oxide, beryllium oxide, vanadium oxide (VO2), fused quartz, mullite (a mineral composed of a combination of aluminum oxide and silicon dioxide) and spinel (MgAl2O4). Example aspects of ceramic nitrides include silicon nitride (Si3N4), aluminum nitride (AlN), gallium nitride (GaN), beryllium nitride (Be3N2), boron nitride (BN), tungsten nitride (WN), vanadium nitride, alkaline earth metal nitrides (e.g., magnesium nitride (Mg3N2)), nickel nitride, and tantalum nitride. Example aspects of oxynitride ceramics include silicon oxynitride, aluminum oxynitride, and silicon-aluminum oxynitride.

[0084] In terms of Figures 1 to 4 As shown, the substrate 103 includes a first major surface 105. Figure 4 As shown, the substrate may include a second major surface 107 opposite the first major surface 105, and the substrate thickness 109 is defined as the average distance therebetween. Figure 1 , 4 As shown, the substrate thickness 109 can be measured in a direction 102 perpendicular to the first major surface 105. In further aspects, the substrate thickness 109 can be about 10 micrometers (μm) or more, about 25 μm or more, about 50 μm or more, about 100 μm or more, about 150 μm or more, about 200 μm or more, about 500 μm or more, about 700 μm or more, about 5 millimeters (mm) or less, about 3 mm or less, about 1 mm or less, about 800 μm or less, about 500 μm or less, about 300 μm or less, about 200 μm or less, about 180 μm or less, or about 160 μm or less. In some aspects, substrate thickness 109 can range from about 10 μm to about 5 mm, from about 25 μm to about 2 mm, from about 50 μm to about 2 mm, from about 100 μm to about 1 mm, from about 150 μm to about 800 μm, from about 200 μm to about 500 μm, or any range or sub-range therebetween.

[0085] like Figures 1 to 4 As shown, the conductive trace 113 of the electronic devices 101, 301, and 401 may include a first surface area 115. Figure 1 and 4 As shown, the conductive trace 113 includes a second surface area 117 opposite the first surface area 115, and the trace thickness 119 is defined as the average distance between them in the direction 102 of the substrate thickness 109 (see Figure 1 ). In some aspects, trace thickness 119 can be about 0.1 μm or more, about 1 μm or more, about 2 μm or more, about 4 μm or more, about 10 μm or less, about 8 μm or less, or about 6 μm or less. In some aspects, trace thickness 119 can range from about 0.1 μm to about 10 μm, from about 1 μm to about 8 μm, from about 2 μm to about 6 μm, from about 4 μm to about 6 μm, or any range or sub-range therebetween.

[0086] like Figures 1 to 4 As shown, the conductive trace 113 may extend in a direction 104 perpendicular to the direction 102 of the substrate thickness 109 (eg, above the substrate 103) for a length (see Figure 1 or 4). Figure 2 , 3 As shown, the width 111 of the conductive trace 113 can be defined as the minimum distance in a direction 206 that is perpendicular to the direction 104 of the substrate thickness 109 (see Figure 1 or 4). In some aspects, the width 111 of the conductive trace 113 can be about 1 μm or more, 10 μm or more, about 20 μm or more, about 40 μm or more, about 100 μm or less, about 80 μm or less, or about 60 μm or less. In some aspects, the width 111 of the conductive trace 113 can be in the range of about 1 μm to about 100 μm, about 10 μm to about 80 μm, about 20 μm to about 60 μm, about 40 μm to about 60 μm, or any range or sub-range therebetween. Figure 2-3 As shown, direction 104 may be perpendicular to direction 206 .

[0087] Conductive traces 113 may include sintered metal nanoparticles. Sintering as described herein means that the metal nanoparticles have been heated without reaching the melting point of the metal nanoparticles to fuse at least some of the metal nanoparticles together. Although the metal nanoparticles are sintered, the morphology of the metal nanoparticles can still be determined using a scanning electron microscope (SEM) and / or a focused ion beam (FIB). The main size of the metal nanoparticles of the sintered metal nanoparticles described herein is the largest size in the SEM image, wherein the largest size is completely within the metal nanoparticle, and the boundary where the metal nanoparticle fuses with another metal nanoparticle is formed by fitting a cubic polynomial to a portion of the surface of the metal nanoparticle on either side of the metal nanoparticle being fused to another metal nanoparticle (i.e., the periphery). In some aspects, the median major dimension of the metal nanoparticles, as determined using an SEM image of a cross-section of the conductive trace in a plane defined by directions 102 and 104, can be about 10 nanometers (nm) or more, about 30 nm or more, about 50 nm or more, about 60 nm or more, about 70 nm or more, about 120 nm or less, about 110 nm or less, about 100 nm or less, about 90 nm or less, or about 80 nm or less. In some aspects, the median major dimension of the metal nanoparticles, as determined using an SEM image of a cross-section of the conductive trace in a plane defined by directions 102 and 104, can be in the range of about 10 nm to about 120 nm, about 30 nm to about 110 nm, about 50 nm to about 100 nm, about 60 nm to about 90 nm, about 70 nm to about 80 nm, or any range or sub-range therebetween. In some aspects, the sintered metal nanoparticles of the conductive trace 113 may include silver, gold, aluminum, copper, nickel, platinum, rhenium, rhodium, osmium, iridium, ruthenium, palladium, tin, indium, lead, or a combination thereof. In further aspects, the sintered metal nanoparticles of the conductive trace 113 may consist essentially of silver, gold, aluminum, copper, nickel, platinum, tin, or a combination thereof. In still further aspects, the sintered metal nanoparticles of the conductive trace 113 may consist essentially of silver or copper.

[0088] Throughout the disclosure, the line resistance of the material is measured using a four-point probe using a current up to 10 milliamperes (mA) according to ASTM B193-20, and the thickness of the material is measured using SEM. In some aspects, the line resistance of the conductive trace 113 can be about 1 ohm / millimeter (Ω / mm) or less, about 0.8 Ω / mm or less, about 0.5 Ω / mm or less, about 0.25 Ω / mm or less, about 0.2 Ω / mm or less, about 0.01 Ω / mm or more, about 0.06 Ω / mm or more, about 0.1 Ω / mm or more, about 0.12 Ω / mm or more, or about 0.18 Ω / mm or more. In some aspects, the line resistance of the conductive trace 113 can be in a range from about 0.01 Ω / mm to about 1 Ω / mm, from about 0.06 Ω / mm to about 0.8 Ω.mm, from about 0.1 Ω / mm to about 0.5 Ω / mm, from about 0.12 Ω / mm to about 0.25 Ω / mm, from about 0.18 Ω / mm to about 0.2 Ω / mm, or any range or sub-range therebetween. The line resistance of a bulk body comprising the same material as described herein refers to the contribution of the volume resistivity of the material to the line resistance ignoring surface effects (e.g., contact resistance), and corresponds to a reference value of the volume resistivity reported, for example, in the CRC Handbook of Chemistry and Physics divided by the cross-sectional area of ​​the conductive trace. For example, the bulk resistivity of silver is 16 μΩ-mm, the bulk resistivity of gold is 22 μΩ-mm, the bulk resistivity of copper is 17 μΩ-mm, the bulk resistivity of aluminum is 26 μΩ-mm, the bulk resistivity of platinum is 106 μΩ-mm, the bulk resistivity of lead is 220 μΩ-mm, the bulk resistivity of nickel is 70 μΩ-mm, and the bulk resistivity of tin is 110 μΩ-mm. Unless otherwise specified, the cross-sectional area of ​​the conductive trace is taken as 2.5x10 -4 mm 2 (50 μm x 5 μm). In some aspects, the ratio of the line resistance of the conductive trace to the line resistance of a block comprising the same material as the conductive trace 113 can be about 10 or less, about 8 or less, about 5 or less, about 3 or less, about 2.5 or less, about 2 or less, about 1.8 or less, about 1.6 or less, about 1.5 or less, about 1.4 or less, about 1.01 or more, about 1.05 or more, about 1.1 or more, about 1.2 or more, or about 1.3 or more. In some aspects, the ratio of the line resistance of the conductive trace 113 to the line resistance of a block comprising the same material as the conductive trace 113 can be in a range from about 1.01 to about 10, from 1.01 to about 5, from about 1.05 to about 3, about 1.1 to about 3, about 1.1 to about 2.5, about 1.2 to about 2, about 1.2 to about 1.5, about 1.3 to about 1.4, or any range or sub-range therebetween.

[0089] In terms of Figure 4 As shown, the conductive trace 113 can be attached to a pair of electrodes (e.g., the absorber layer 323) with a contact resistance at the interface between the conductive trace and the electrodes. It should be understood that Figure 1 and Figure 2 The electronic device 101 and / or Figure 3 The portion of the electronic device 301 shown may include a pair of electrodes to which conductive traces are attached. Figure 1 and Figure 2 The electronic device 101 shown may be Figure 4 A portion of electronic device 401 is shown between absorber layer 323 and electrically insulating layer 433. Throughout this disclosure, the contact resistance of the material connected to two electrodes is measured under dry circuit (no aging) conditions using a four-point probe with a current sweep from 0 milliamperes (mA) to 10 mA. Contact resistance (R c ) is measured as

[0090] R c =1 / 2(R tot –R trace –2 x R electrode ).

[0091] R tot is the resistance measured between two probes on a first electrode and two probes on a second electrode, a conductive trace connecting the first electrode and the second electrode, the electrodes being placed 300 μm from the conductive trace. R trace is the resistance measured between the probe pair at both ends of the conductive trace. electrode is the resistance measured between the probe pair at both ends of the electrode. In some aspects, the contact resistance of the conductive trace 113 may be about 5 ohms (Ω) or less, about 1 Ω or less, about 0.5 Ω or less, about 0.4 Ω or less, about 0.3 Ω or less, about 0.25 Ω or less, about 0.01 Ω or more, about 0.05 Ω or more, about 0.1 Ω or more, or about 0.2 Ω or more. In some aspects, the contact resistance of the conductive trace 113 may be in the range of about 0.01 Ω to about 5 Ω, about 0.01 Ω to about 1 Ω, about 0.05 Ω to about 0.5 Ω, about 0.05 Ω to about 0.4 Ω, from about 0.1 Ω to about 0.3 Ω, from about 0.2 Ω to about 0.25 Ω, or any range or sub-range therebetween.

[0092] As used herein, a first layer is “disposed on a second layer” if a surface of the first layer is in direct contact with a surface of the second layer. As used herein, a first layer is “disposed over a second layer” if the first layer is disposed on the second layer or if one or more intervening layers are present between the first layer and the second layer. Figure 1 and 4As shown, at least a portion of the conductive trace 113 can be disposed on the substrate 103 (eg, the first major surface 105). Figures 1 to 4 As shown, the conductive traces 113 are disposed above the substrate 103 (eg, the first major surface 105). In a further aspect, as Figure 4 As shown, at least a portion of the conductive trace 113 is disposed on the substrate 103 (eg, the first major surface 105), with one or more intermediate layers (eg, the absorber layer 323, the metal layer 443, the second layer 453) disposed therebetween. Figure 4 As shown, an absorber layer 323 (discussed below) can be located between at least a portion of the conductive trace 113 and the substrate 103 (eg, the first major surface 105).

[0093] In terms of Figure 1 and 4 As shown, at least a portion of the second surface area 117 of the conductive trace 113 can contact the first major surface 105 of the substrate 103. In a further aspect, as Figure 4 As shown, conductive trace 113 may extend around edge 106 of substrate 103 such that a portion of conductive trace 113 is further disposed above second major surface 107 of substrate 103. For example, a portion of second surface area 117 of conductive trace 113 may contact first major surface 105 of substrate 103, and another portion of second surface area 117 of conductive trace 113 may contact second major surface 107 of substrate 103, wherein conductive trace 113 is continuous by extending around edge 106 of substrate 103. For example, Figure 4 A portion of the electronic device 401 shown can correspond to a surround electrode, wherein a first electrode (e.g., a metal layer 443 disposed above the first major surface 105) and a second electrode (e.g., a metal layer 443 disposed above the second major surface 107) are on opposite surfaces of the substrate 103, and a conductive trace 113 electrically connects the electrodes through the surround edge 106.

[0094] In terms of Figure 4As shown, the electrically insulating layer 433 can be disposed on at least a portion of the conductive trace 113, for example, the contact surface area 437 of the electrically insulating layer 433 contacts the first surface area 115 of the conductive trace 113. In a further aspect, as shown, the conductive trace 113 can be arranged above at least a portion of the edge 106, wherein the electrically insulating layer 433 arranged above the conductive trace 113 at this location prevents accidental electrical contact between the electronic device 401 and an adjacent structure including a conductive surface (e.g., another electronic device) that may otherwise be accidentally electrically contacted due to lateral displacement of the electronic device. As used herein, "electrically insulating" refers to a volume resistivity of about 0.1 ohm-meter (i.e., 100,000,000 μΩ-mm) or greater. Throughout the disclosure, volume resistivity is measured in accordance with ASTM D257.

[0095] In terms of Figures 3 to 4 As shown, electronic devices 301 and 401 may include an absorber layer 323, although in other aspects, substrate 103 or another layer may function as an absorber layer in addition to or in place of absorber layer 323. Figure 2 As shown, the electronic device 101 may not include a separate absorber layer; instead, the substrate 103 may be used as the absorber layer and / or the absorber layer may be removed during manufacturing. Figures 3 to 4 As shown, the absorbent layer 323 may include a third major surface 325. In a further aspect, as Figure 4 As shown, the absorber layer 323 can include a fourth major surface 327 opposite the third major surface 325, with an absorber layer thickness defined therebetween. In further aspects, the absorber layer thickness 329 can be about 10 nm or more, about 100 nm or more, about 200 nm or more, about 400 nm or more, about 10 μm or less, about 2 μm or less, about 1 μm or less, or about 700 nm or less. In further aspects, the absorber layer thickness 329 can be in a range from about 10 nm to about 10 μm, from about 100 nm to about 2 μm, from about 200 nm to about 1 μm, from about 400 nm to about 700 nm, or any range or sub-range therebetween.

[0096] In terms of Figure 3 As shown, absorber layer 323 may include width 321, which may be within one or more of the ranges discussed above for width 111. In some aspects, width 321 of absorber layer 323 may be equal to or greater than width 111 of conductive trace 113. Figure 3As shown, the absorber layer 323 can be separated from the conductive trace 113 by a minimum distance 311, the minimum distance 311 being measured in the direction 206 parallel to the first major surface 105 of the substrate 103. In further aspects, the minimum distance 311 can be about 100 nm or more, about 500 nm or more, about 1 μm or more, about 5 μm or more, about 10 μm or more, about 5 mm or less, about 1 mm or less, about 500 μm or less, about 100 μm or less, or about 50 μm or less. In further aspects, the minimum distance 311 can range from about 100 nm to about 5 mm, from about 500 nm to about 1 mm, from about 1 μm to about 500 μm, from about 5 μm to about 100 μm, from about 10 μm to about 50 μm, or any range or sub-range therebetween.

[0097] Throughout the disclosure, the absorber layer has an absorbance of about 20% or more for at least one optical wavelength of about 1 μm or greater (e.g., infrared electromagnetic radiation). As used herein, the absorbance of a 100 nm thick sample is measured using a spectrophotometer capable of scanning at least 1 μm to 20 μm optical wavelengths, wherein the absorbance value of the sample material is scaled relative to a blank sample. In some aspects, the absorber layer 323 may include an absorbance of about 40% or more for at least one optical wavelength of about 700 nm or greater or about 1 μm or greater. In some aspects, the absorber layer 323 may include an absorbance of about 20% or more or about 40% or more for at least one optical wavelength in the range from about 700 nm to about 12 μm, from about 1 μm to about 5 μm, or about 5 μm to about 12 μm. In some aspects, the sintered nanoparticles of the conductive trace 113 may include an absorbance for at least one optical wavelength that is less than the corresponding absorbance of the absorber layer 323 (i.e., at the same at least one optical wavelength). In further aspects, the sintered nanoparticles of the conductive trace 113 can include an absorbance for at least one wavelength of light of about 60% or less, about 40% or less, about 20% or less, about 10% or less, 8% or less, or 5% or less. In other aspects, the absorbance of the absorber layer 323 at at least one wavelength of light can be about 10% or more, about 20% or more, about 30% or more, about 40% or more, or about 50% or more greater than the absorbance of the conductive trace 113 at at least one wavelength of light. In some aspects, the absorber layer 323 can include a conductive oxide or a dielectric material. Exemplary aspects of the absorber layer include indium tin oxide (ITO), silicon nitride, glass-based materials, and ceramic-based materials. Fig.17The absorbance 1703 of the potential absorber layer as a function of the wavelength of light 1701 (in nanometers) is shown. Curve 1705 corresponds to a glass-based material having an absorbance equal to or greater than 20% for a wavelength of light of about 4.2 μm or greater, an absorbance equal to or greater than 40% for a wavelength of light of about 4.5 μm or greater, and an absorbance equal to or greater than 90% for a wavelength of light of about 6.5 μm or longer. Thus, in some aspects, substrate 103 can act as an absorber layer. Curve 1707 is an absorbance curve of ITO on a glass-based material including LOTUS NXT glass. ITO adds an absorption peak at about 1.1 μm, an absorbance of about 20% or more between about 0.8 μm and about 1.8 μm, and an absorbance of about 40% or more between about 1 μm and about 1.4 μm. Without wishing to be bound by theory, the absorbance of the nanoparticles is a function of their size (e.g., maximum dimension), e.g., silver nanoparticles having a maximum dimension of about 10 nm include a peak absorbance at an optical wavelength of about 400 nm, and silver nanoparticles having a maximum dimension of about 100 nm include a peak absorbance at an optical wavelength of about 520 nm. Furthermore, the size (and therefore, absorbance) of the nanoparticles may vary throughout the sintering process, which may limit the effectiveness of sintering the plurality of metal nanoparticles solely through heating generated by direct impact of the plurality of metal nanoparticles with electromagnetic radiation.

[0098] Throughout this disclosure, adhesion is measured using the cross-cut adhesion test according to ASTM 3359-09 Method B using a cross-cut paint adhesion test kit available from Gardco. Figure 1 and Figure 4 , when the second surface area 117 of the conductive trace 113 contacts the first major surface 105 of the substrate 103, the adhesion between the conductive trace 113 and the substrate 103 can be about 3B or more, about 4B or more, or about 5B. Figure 4 When the second surface region 117 of the conductive trace 113 contacts the third major surface 325 of the absorber layer 323 , the adhesion between the conductive trace 113 and the absorber layer 323 may be about 3B or more, about 4B or more, or about 5B.

[0099] It should be understood that the electronic device may be incorporated into a display device, such as a liquid crystal display (LCD), an electrophoretic display (EPD), a light emitting diode display (OLED), and / or a plasma display panel (PDP). Figure 4 The electronic device 401 shown surrounding the electrode can be connected to an LED and / or as part of an LED, which can be used to form an LED (or microLED) display. In addition, it should be understood that the electronic device can be incorporated into a photovoltaic device, a lighting device, a sensor or a flexible electronic device.

[0100] According to the present disclosure Figures 1 to 4 Aspects of the method for manufacturing the conductive traces 113 of the portions of the electronic devices 101, 301 and / or 401 will be described below with reference to Figure 5 The flowchart and Figures 6 to 16 The example method steps in are discussed.

[0101] In the first step 501 of the method of the present disclosure, Figure 6 As shown, the method can begin by providing a substrate 103. In some aspects, the substrate 103 can be provided by purchasing or otherwise obtaining the substrate or by forming the substrate. In some aspects, the substrate can include a glass-based material or a ceramic-based material. In further aspects, they can be provided by forming glass-based substrates using various tape forming processes, such as groove pulling, down-pulling, fusion down-pulling, up-pulling, pressing rollers, re-stretching, or floating. In further aspects, glass-based substrates containing ceramic crystals can be provided by heating a glass-based substrate to crystallize one or more ceramic crystals. In various aspects, as discussed throughout, the substrate 103 can be used as an absorbent layer.

[0102] After step 501, in the aspect, reference Figure 6 , the method can proceed to step 503, including disposing an absorber layer 323 over the substrate 103 (eg, the first major surface 105). In a further aspect, as Figure 6 As shown, providing the absorption layer 323 may include deposition from a plasma or gas 601 to form the absorption layer 323, as shown by arrow 603. In further aspects, chemical vapor deposition (CVD) (e.g., low pressure CVD, plasma enhanced CVD (PECVD)), physical vapor deposition (PVD) (e.g., sputtering, evaporation, molecular beam epitaxy, ion plating), atomic layer deposition (ALD), spray pyrolysis, solution coating, spin casting, slot die coating, printing, or lamination can be used. In further aspects, the absorption layer 323 may include a glass-based material, a ceramic-based material, or ITO, although other materials that meet the definition of an absorption layer may be used in other aspects. In further aspects, as Figure 6 As shown, absorber layer 323 can be disposed on substrate 103 such that fourth major surface 327 of absorber layer 323 contacts first major surface 105 of substrate 103. In further aspects, absorber layer 323 can include an absorber layer thickness 329 within one or more of the above ranges.

[0103] In further aspects, step 503 can further include providing one or more additional layers. In further aspects, one or more additional layers can be provided using one or more of the techniques discussed above for providing absorbent layer 323. In further aspects, as Fig.15 As shown, before the absorber layer 323 is disposed over the substrate 103, one or more additional layers (eg, metal layer 443, second layer 453) may be disposed on the substrate 103. In further aspects, as Figure 4 As shown, the second layer 453 may include a fifth surface region 455 and a sixth surface region 457 opposite the fifth surface region 455, with a thickness 459 defined therebetween. The thickness 459 may be within one or more of the ranges discussed above for the absorber thickness 329. The second layer 453 may be electrically insulating or may be a metal layer. An exemplary aspect of the second layer 453 is titanium. In another aspect, the sixth surface region 457 of the second layer 453 may contact the first major surface 105 of the substrate 103. In a further aspect, the metal layer 443 may include a third surface region 445 and a fourth surface region 447 opposite the third surface region 445, with a thickness 449 defined therebetween. The thickness 449 may be within one or more of the ranges discussed above for the absorber thickness 329. Exemplary aspects of the metal layer 443 may include copper, aluminum, tin, or silver. In another aspect, the fourth surface region 447 of the metal layer 443 may contact the fifth surface region 455 of the second layer 453. As Figure 4 As shown, fourth major surface 327 of absorber layer 323 may contact third surface region 445 of metal layer 443. Figure 4 As shown, the absorber layer can be disposed on a metal layer 443, which can in turn be disposed on a second layer 453, which can in turn be disposed on a substrate 103. Providing a metal layer can reflect electromagnetic radiation that strikes the absorber layer that is not initially absorbed by the absorber layer, which can increase the amount of electromagnetic radiation absorbed by the absorber layer and the resulting heating of the plurality of metal nanoparticles. In some aspects, one or more additional layers can include a functional device contact, for example, as an electrode in a light emitting diode. Providing an absorber layer as part of a functional device contact can improve (i.e., reduce) the contact resistance between the functional device contact and the resulting conductive trace, for example, by sintering metal nanoparticles of the plurality of metal nanoparticles near or at a surface of the absorber layer, in addition to (or instead of) sintering the metal nanoparticles at an exposed surface of the plurality of metal nanoparticles.

[0104] After step 501 or step 503, if Figures 7 to 8 As shown, the method can proceed to step 505, including arranging a plurality of metal nanoparticles. Figures 7 to 8As shown, the method may include dispensing ink 705 from a container 701 (e.g., a catheter, a hose, a micropipette, or a syringe) to arrange a layer 703 containing multiple metal nanoparticles. In the present disclosure, "ink" refers to a mixture of multiple metal nanoparticles and at least one liquid. In a further aspect, the multiple metal nanoparticles may include one or more of the above-mentioned materials. In a further aspect, the multiple metal nanoparticles may include a median major size in one or more of the above-mentioned ranges. In a further aspect, the weight of the multiple metal nanoparticles in the ink 705 may be about 10 weight % (wt%) or more, about 20 wt% or more, about 30 wt% or more, about 70 wt% or less, about 60 wt% or less, about 50 wt% or less, or about 30 wt% or less. In a further aspect, the wt% of the multiple metal nanoparticles in the ink 705 may be in the range of about 10 wt% to about 70 wt%, about 20 wt% to about 60 wt%, about 30 wt% to about 50 wt%, or any range or sub-range therebetween. In further aspects, the ink 705 can include an organic solvent having a boiling point of about 150° C. or less, about 100° C. or less, or about 80° C. or less. In still further aspects, the ink can consist essentially of a plurality of metal nanoparticles and an organic solvent.

[0105] In a further aspect, Figure 7 and 13 As shown, step 505 may include disposing a plurality of metal nanoparticles (eg, ink 705) to form a layer 703 comprising a plurality of metal nanoparticles, which may be at least partially disposed on the third major surface 325 of the absorbent layer 323. In a further aspect, as Fig.13 As shown, layer 703 may include width 111. In a further aspect, as Fig.15 As shown by dashed lines 1501a and 1501b in FIG. 1 , a portion of layer 703 comprising a plurality of metal nanoparticles can be disposed on third major surface 325 of absorber layer 323. In a further aspect, as Fig.15 As shown, the ink 705 can be set to form a layer 703 which can be a continuous layer, the first part is set above the first main surface 105 of the substrate 103, and the second part is set above the second main surface 107 of the substrate, and the layer 703 continuously extends around the edge 106 of the substrate to electrically connect the first and second parts of the layer 703.

[0106] In a further aspect, Figure 8 and 13 As shown in FIG. 15 , step 505 may include disposing a plurality of metal nanoparticles (eg, ink 705) to form a layer 703 comprising a plurality of metal nanoparticles, which may be at least partially disposed on the first major surface 105 of the substrate 103. In a further aspect, as Figures 13 to 14 As shown, layer 703 may include width 111. In a further aspect, as Fig.13 As shown, layer 703 can be disposed on substrate 103, for example when substrate 103 is used as an absorbent layer. In a further aspect, as Fig.14 As shown, layer 703 can be disposed on metal layer 443, and absorber layer 323 can be disposed on metal layer 443. In a further aspect, as Fig.14 As shown, layer 703 can be separated from absorber layer 323 by a minimum distance 311 along direction 206 parallel to first major surface 105 of substrate 103. In further aspects, minimum distance 311 can be about 100 nm or more, about 500 nm or more, about 5 μm or more, about 20 μm or more, about 100 μm or more, about 200 μm or more, about 5 mm or less, about 2 mm or less, about 1 mm or less, about 800 μm or less, about 500 μm or less, or about 300 μm or less. In further aspects, minimum distance 311 can range from about 100 nm to about 5 mm, from about 500 nm to about 2 mm, from about 5 μm to about 1 mm, from about 20 μm to about 800 μm, from about 100 μm to about 500 μm, from about 200 μm to about 300 μm, or any range or sub-range therebetween. Providing a minimum distance 311 between the absorber layer 323 and the layer 703 may enable further processing of the absorber layer 323 (e.g., removal of the absorber layer 323) without damaging the conductive traces 113 formed by the layer 703. In further aspects, as Fig.15 As shown, a portion of layer 703 containing multiple metal nanoparticles can be disposed on one or more additional layers (e.g., metal layer 443, second layer 453), wherein layer 703 is a continuous layer, a first portion of layer 703 is disposed above a first major surface 105 of a substrate 103, a second portion of layer 703 is disposed on a second major surface 107 of the substrate, and layer 703 extends continuously around an edge 106 of the substrate to electrically connect the first and second portions of layer 703.

[0107] After step 505, refer to Fig. 9, the method can proceed to step 507, including heating the layer 703 containing a plurality of metal nanoparticles at a first temperature for a first time period. In various aspects, as shown, heating the layer 703 can include placing the layer 703 in an oven 901 maintained at a first temperature. In some aspects, the first temperature can be about 50°C or higher, about 80°C or higher, about 100°C or higher, about 120°C or higher, about 150°C or lower, about 140°C or lower, or about 130°C or lower. In some aspects, the first temperature can be in the range of about 50°C to about 150°C, about 80°C to about 150°C, about 100°C to about 140°C, about 120°C to about 130°C, or any range or sub-range therebetween. In various aspects, the first time period can be about 10 minutes or longer, about 15 minutes or longer, about 30 minutes or longer, about 45 minutes or longer, about 2 hours or less, about 1.5 hours or less, or about 1 hour or less. In some aspects, the first time period can be in the range of about 10 minutes to about 2 hours, about 15 minutes to about 2 hours, about 30 minutes to about 1.5 hours, about 30 minutes to about 1 hour, about 45 minutes to about 1 hour, or any range or sub-range therebetween. Heating layer 703 in step 507 can remove at least a portion of the organic solvent, if present.

[0108] After step 501, step 505, or step 507, refer to Figure 10-15, the method can proceed to step 509, including impinging the absorbing layer (e.g., absorbing layer 323, substrate 103) with electromagnetic radiation. In some aspects, the electromagnetic radiation can include one or more wavelengths of light for which the absorbing layer (e.g., absorbing layer 323, substrate 103) has an absorbance of 20% or more, 30% or more, 40% or more, about 60% or more, or about 90% or more. In further aspects, the layer 703 comprising a plurality of metallic nanoparticles can include an absorbance for one or more wavelengths of light that is less than the corresponding absorbance of the absorbing layer 323 (i.e., at the same one or more wavelengths of light). In further aspects, the layer 703 comprising a plurality of metallic nanoparticles can include an absorbance for one or more wavelengths of light of about 60% or less, about 40% or less, about 20% or less, about 10% or less, about 8% or less, or 5% or less. In other aspects, the absorbance of the absorbent layer 323 at one or more wavelengths of light can be about 10% or more, about 20% or more, about 30% or more, about 40% or more, or about 50% or more greater than the absorbance of the layer 703 comprising a plurality of metallic nanoparticles at one or more wavelengths of light. In further aspects, at least one of the one or more wavelengths of light can be about 700 nm or more, about 1 μm or more, about 1.1 μm or more, about 1.2 μm or more, about 2 μm or more, about 4 μm or more, about 5 μm or more, about 6.5 μm or more, about 9 μm or more, about 20 μm or less, about 16 μm or less, about 14 μm or less, about 12 μm or less, about 11 μm or less, about 5 μm or less, about 2 μm or less, or about 1.4 μm or less. In a further aspect, at least one of the one or more wavelengths of light can be in the range of from about 700 nm to about 20 μm, from about 1 μm to about 20 μm, from about 1.1 μm to about 16 μm, from about 1.2 μm to about 16 μm, from about 2 μm to about 16 μm, from about 4 μm to about 14 μm, from about 5 μm to about 12 μm, from about 6.5 μm to about 12 μm, from about 9 μm to about 11 μm, or any range or sub-range therebetween. In a further aspect, at least one of the one or more wavelengths of light can be in the range of from about 1 μm to about 12 μm, from about 1 μm to about 5 μm, from about 1.1 μm to about 2 μm, from about 1.1 μm to about 1.4 μm, from about 1.2 μm to about 1.4 μm, or any range or sub-range therebetween. In further aspects, all of the one or more wavelengths of light can be about 700 nm or greater, about 1 μm or greater, about 1.1 μm or greater, about 1.2 μm or greater, about 2 μm or greater, about 4 μm or greater, about 5 μm or greater, about 6.5 μm or greater, or about 9 μm or greater. In further aspects, all of the one or more wavelengths of light can be within one or more of the ranges discussed above in this paragraph.

[0109] In terms of Fig.10 , 12 15, electromagnetic radiation (generally indicated by arrow 1015) can be emitted from laser 1001 or lamp 1011, but in other aspects another electromagnetic radiation source (e.g., a light emitting diode (LED)) can also be used. In further aspects, laser 1001 can include a gas laser (e.g., a helium-neon laser (He-Ne), a xenon-helium laser (Xe-He), a carbon monoxide laser (CO), a carbon dioxide laser (CO2), a xenon laser (Xe), a chemical laser (e.g., a hydrogen fluoride laser (HF), a deuterium fluoride laser (DF), an iodine laser), a solid-state doped laser (e.g., a neodymium-doped yttrium aluminum garnet (YAG) laser (Nd:YAG), an erbium-doped YAG laser (Er:YAG), a thulium-doped YAG laser (Tm:YAG), a holmium-doped YAG laser (Ho:YAG), a chromium zinc selenide laser (Cr:Zn The laser 1001 may be a laser such as a laser of the type described herein, e.g., ...

[0110] In some aspects, the absorbing layer can be irradiated with electromagnetic radiation for about 30 seconds or more, about 1 minute or more, about 2 minutes or more, about 4 minutes or more, about 120 minutes or less, about 60 minutes or less, about 30 minutes or less, about 20 minutes or less, about 15 minutes or less, about 12 minutes or less, about 9 minutes or less, or about 6 minutes or less. In some aspects, the absorbing layer can be irradiated with electromagnetic radiation for about 30 seconds to about 120 minutes, about 30 seconds to about 60 minutes, about 30 seconds to about 30 minutes, 30 seconds to about 20 minutes, about 1 minute to about 15 minutes, about 1 minute to about 12 minutes, about 2 minutes to about 9 minutes, about 4 minutes to about 6 minutes, or any range or sub-range therebetween. In some aspects, the power density of the electromagnetic radiation impinging the absorbing layer (e.g., within a beam spot defined as follows) can be about 50 Watts / square centimeter (W / cm 2 ) or more, about 100W / cm 2 or more, about 500W / cm 2 or more, about 1,000W / cm 2 or more, about 2,000W / cm 2 or more, about 5,000W / cm 2or more, about 50,000W / cm 2 or less, about 30,000W / cm 2 or less, about 20,000W / cm 2 or less, or about 10,000W / cm 2 In some aspects, the power density of the electromagnetic radiation striking the absorbing layer can be about 50 W / cm 2 to about 50,000W / cm 2 , about 100W / cm 2 To about 30,000W / cm 2 , about 500W / cm 2 To about 20,000W / cm 2 , about 1,000W / cm 2 To about 20,000W / cm 2 , about 2,000W / cm 2 To about 20,000W / cm 2 , about 5,000W / cm 2 To about 10,000W / cm 2 , or any range or sub-range therebetween. In some aspects, the electromagnetic radiation can be scanned through the absorbing layer at a scanning speed of about 1 millimeter per second (mm / s) or more, about 10 mm / s or more, about 50 mm / s or more, about 100 mm / s or more, about 5,000 mm / s or less, about 1,000 mm / s or less, about 500 mm / s or less, or about 300 mm / s or less. In some aspects, the electromagnetic radiation can be scanned through the absorbing layer at a scanning speed ranging from about 1 mm / s to about 5,000 mm / s, from about 10 mm / s to about 1,000 mm / s, from about 50 mm / s to about 500 mm / s, from about 100 mm / s to about 300 mm / s, or any range or sub-range therebetween. In some aspects, the electromagnetic radiation can be scanned across the absorbing layer 1 or more times, 4 or more times, 8 or more times, 100 times or less, 50 times or less, or about 20 times or less. In some aspects, the electromagnetic radiation may scan across the absorbing layer 1 to 100 times, 4 to 50 times, 8 to 20 times, or any range or sub-range therebetween. Alternatively, the electromagnetic radiation may not scan across the absorbing layer, for example, when the effective beam spot (defined below) has a maximum dimension that is equal to or greater than a corresponding dimension of the absorbing layer.

[0111] In some respects, reference Fig.10 , 1215, laser 1001 can emit laser beam 1005, which is configured to travel along beam path 1003 to impact the absorption layer (e.g., absorption layer 323, substrate 103). In a further aspect, beam path 1003 can rotate (as shown by arrow 1002) so that laser beam 1005 scans the absorption layer. In a further aspect, as Fig.13 As shown, the laser beam 1005 (see Fig.12 ) can impact the first major surface 105 of the substrate 103. In a further aspect, as Fig.11 As shown in FIG. 13 to FIG. 14 , the beam spot 1007 of the laser beam 1005 (see Fig.10 , 12 or 15) may impact the third major surface 325 of the absorption layer 323 .

[0112] As used herein, a beam spot comprises a beam having a maximum intensity of about 13.5% (ie, 1 / e) of the electromagnetic radiation at a location on the surface of the absorbing layer. 2 ) of the absorption layer. In some aspects, such as Figures 13 to 14 As shown, when the perimeter of the beam spot 1007 includes a circle, the maximum dimension 1009 of the beam spot 1007 can correspond to the diameter of the perimeter of the beam spot 1007, but other shapes are possible for the perimeter of the beam spot (e.g., an ellipse). In some aspects, the maximum dimension 1009 of the beam spot 1007 can be about 50 microns or more, about 100 microns or more, about 500 microns or more, about 1 millimeter or more, about 30 millimeters or less, about 10 millimeters or less, or about 5 millimeters or less. In some aspects, the maximum dimension 1009 of the beam spot 1007 can be in the range of about 50 μm to about 30 mm, about 100 μm to about 20 mm, about 500 μm to about 10 mm, about 1 mm to about 5 mm, or any range or sub-range therebetween. In some aspects, as Fig.11 and 13 14, the beam spot 1007 does not impact at least a portion (eg, any portion) of the layer 703 comprising a plurality of metal nanoparticles. In a further aspect, referring to Fig.11 and 13 , a minimum distance 1109 between the beam spot 1007 and the layer 703 comprising a plurality of metallic nanoparticles, measured in a direction 206 parallel to the first major surface 105 of the substrate 103, can be within one or more of the ranges discussed above for the minimum distance 311. In some aspects, although not shown, the beam spot can impact a portion of the plurality of metallic nanoparticles.

[0113] In various aspects, the electromagnetic radiation can impinge on an absorber layer (e.g., absorber layer 323, substrate 103) as discussed above with respect to beam spot 1007. In further aspects, Fig.11 ,13 As shown in Figures 14 and 15, for beam spot 1007, the electromagnetic radiation does strike at least a portion of layer 703 comprising a plurality of metallic nanoparticles. In a further aspect, the electromagnetic radiation strikes only the absorbing layer. In a further aspect, the electromagnetic radiation may not strike any layer in layer 703 comprising a plurality of metallic nanoparticles. In a further aspect, as shown in Figures 14 and 15, the electromagnetic radiation strikes only the absorbing layer. Fig.15 As shown, electromagnetic radiation (eg, beam spot 1007 ) may strike a portion of absorber layer 323 disposed above first major surface 105 of substrate 103 without striking a portion of layer 703 including a plurality of metal nanoparticles disposed above second major surface 107 of substrate 103 .

[0114] As a result of striking the absorber layer with electromagnetic radiation, the temperature of the absorber layer is locally increased. In some aspects, the maximum temperature of the absorber layer due to striking the absorber layer with electromagnetic radiation can be about 200°C or more, about 300°C or more, about 350°C or more, about 400°C or more, about 800°C or less, about 700°C or less, about 600°C or less, or about 500°C or less. In some aspects, the maximum temperature of the absorber layer due to striking the absorber layer with electromagnetic radiation can be in the range of from about 200°C to about 800°C, from about 300°C to about 700°C, from about 350°C to about 600°C, from about 400°C to about 500°C, or any range or sub-range therebetween.

[0115] Step 509 also includes transferring heat from the absorber layer (eg, absorber layer 323, substrate 103) to the layer 703 comprising a plurality of metal nanoparticles. Fig.11 and 13 As shown by arrows 1114 or 1314, heat can be transferred directly from the absorber layer (e.g., absorber layer 323, substrate 103) to layer 703, such as by conduction through the absorber layer. Fig.14 As schematically shown in FIG. 1 , heat can be transferred from the absorber layer 323 to the layer 703 by transferring heat through one or more intermediate layers. For example, as shown, heat can be transferred through the absorber layer 323 to another layer (e.g., substrate 103, metal layer 443) as indicated by arrow 1414, and then heat can be transferred from the other layer (e.g., substrate 103, metal layer 443) to the layer 703 as indicated by arrow 1416. The heat transferred to the layer 703 is sufficient to sinter the plurality of metal nanoparticles to form the conductive traces 113 (see FIG. 1 ). Figures 1 to 4 and 16). In some aspects, the maximum temperature of layer 703 in step 509 can be within one or more of the ranges discussed above for the maximum temperature of the absorber layer. Fig.15As shown, electromagnetic energy (e.g., beam spot 1007 of laser beam 1005) can hit absorption layer 323 disposed above first major surface 105 of substrate 103, and heat transferred from absorption layer 323 can be transferred to layer 703, which has first major surface 105, second major surface 107, and surrounds edge 106 of substrate 103 to sinter multiple metal nanoparticles in layer 703 to form Figure 4 The conductive trace 113 shown in FIG. 1 is provided with a first major surface 105 , a second major surface 107 , and surrounds an edge 106 of the substrate 103 .

[0116] Sintering the plurality of metal nanoparticles by heating an absorbing layer that transfers heat to the plurality of metal nanoparticles can produce a conductive trace that includes good adhesion to the rest of the electronic device (e.g., about 4B or more, about 5B), which can improve the reliability and / or durability of the electronic device. Indirect heating of the plurality of metal nanoparticles with electromagnetic radiation rather than directly heating the plurality of metal nanoparticles with electromagnetic radiation means that the metal nanoparticles at the surface of the resulting electronic device are sintered, which reduces resistivity and increases adhesion. Sintering a plurality of metals by impinging the absorbing layer with electromagnetic radiation can reduce processing time, which can reduce the cost of manufacturing the final electronic device. Impinging the absorbing layer with electromagnetic radiation can also allow targeted heating to be located in areas close to the plurality of metal nanoparticles, which can reduce the incidence of damage to other components of the resulting electronic device caused by the sintering process. Impinging the absorbing layer with electromagnetic radiation means that the same electromagnetic radiation source and absorbing layer can be used for various types of metal nanoparticles, which makes the process more versatile by reducing the need to optimize conditions for different types of metal nanoparticles. Furthermore, striking the absorber layer with electromagnetic radiation means that a direct line of sight to the plurality of metallic nanoparticles is not required, which can allow for the formation of conductive traces having complex shapes and / or as part of a multi-component electronic device. In some aspects, although not shown, the plurality of metallic nanoparticles can absorb electromagnetic radiation in addition to the absorber layer absorbing the electromagnetic radiation; however, a majority of the heating of the plurality of metallic nanoparticles can come from the electromagnetic radiation absorbed by the absorber layer.

[0117] After step 509 or step 513 (discussed below), refer to Fig.16, the method may proceed to step 511, including heating the conductive trace 113 at a second temperature for a second time period. In various aspects, as shown, heating the conductive trace 113 may include placing the conductive trace 113 in an oven 901 maintained at a second temperature. In some aspects, the second temperature may be about 150°C or higher, about 160°C or higher, about 170°C or higher, about 200°C or lower, about 190°C or lower, or about 180°C or lower. In some aspects, the second temperature may range from about 150°C to about 200°C, from about 160°C to about 190°C, from about 170°C to about 180°C, or any range or sub-range therebetween. In some aspects, the second temperature may be greater than the first temperature in step 507. In some aspects, the second time period may be about 30 minutes or longer, about 45 minutes or longer, about 1 hour or longer, about 2 hours or less, about 1.5 hours or less, or about 1.25 hours or less. In some aspects, the second time period can be in the range of about 30 minutes to about 2 hours, about 45 minutes to about 1.5 hours, about 1 hour to about 1.25 hours, or any range or sub-range therebetween. Heating conductive trace 113 in step 511 can further reduce the resistivity of the conductive trace.

[0118] In some aspects, after step 509 or step 511, the method can proceed to step 513, which includes removing absorber layer 323. For example, after forming conductive traces 113 from layer 703, the absorber layer 323 can be removed. Fig.14 The absorption layer 323 shown in FIG. Figure 2 Electronic component 101 is shown. Providing an absorber layer that is deposited and then removed during the process can achieve sintering of multiple metal nanoparticles regardless of the absorption characteristics of other materials in the resulting electronic device. In other aspects, step 509 can be omitted, for example, if the absorber layer is part of the resulting electronic device.

[0119] After step 509, step 511, or step 513, the method may proceed to step 515. In various aspects, step 515 may include providing an electrically insulating layer 433 on at least a portion of the conductive trace 113, for example, before sintering. Fig.15 After the device shown, to form Figure 4 The electronic device shown. In various aspects, step 515 may include incorporating the electronic device into a display device and / or a consumer electronic device. In some aspects, the method may be completed when step 515 is reached and / or at the end of step 515. At the end of step 515, the conductive trace 113 may include a line resistance and / or a contact resistance within one or more of the corresponding ranges described above. At the end of step 515, the conductive trace 113 may include adhesion to the rest of the electronic device (e.g., substrate 103, absorption layer 323) within one or more of the above ranges.

[0120] In various aspects, the method of manufacturing a color conversion sheet according to aspects of the present disclosure may be performed along the following steps: Figure 5 Steps 501, 503, 505, 507, 509, 511, 513, and 515 of the flowchart in FIG. 1 are sequentially performed as described above. In some aspects, for example, when the absorber layer is already present at the end of step 501, the sequence from step 501 to step 505 can be followed along arrow 502. In some aspects, for example, if the device includes an absorber layer and a layer including a plurality of metallic nanoparticles at the end of step 501, the sequence from step 501 to step 509 can be followed along arrow 504. In some aspects, arrow 506 can be followed from step 505 to step 509, for example, if the layer including a plurality of metallic nanoparticles is to be sintered by impinging the absorber layer with electromagnetic radiation before the layer is heated in an oven (and / or without heating the layer in an oven). In some aspects, arrow 508 can be followed from step 509 to step 513, for example, if the absorber layer is to be removed (in conjunction with arrow 512) before heating the conductive trace, and / or if the absorber layer is to be removed and the conductive trace is not to be further heated. In some aspects, arrow 510 can be sequenced from step 509 to step 515, e.g., if the conductive trace is not further heated, the absorber layer is not removed, and / or the method is complete at the end of step 509. In some aspects, e.g., if the absorber layer is removed and the conductive trace is then further heated, then step 511 can be sequenced from step 513 along arrow 512. In various aspects, e.g., if the absorber layer is part of an electronic device and / or the method is complete at the end of step 511, then step 515 can be sequenced from step 511 along arrow 514. According to aspects of the present disclosure, any of the above options can be combined to make a color conversion sheet.

[0121] example

[0122] Various aspects will be further clarified through the following specific embodiments. Examples AC and AA-BB include placing an ink comprising 65wt% of a plurality of silver nanoparticles having a median maximum size (d50) of 70nm in an organic solvent to form an ink deposit having a width of 50μm on a glass-based substrate, the substrate comprising LOTUS NXT glass, and the substrate having a thickness of 500μm. The ink is deposited so that the resulting conductive trace will include a cross-section having a width of 50μm and a thickness of 5μm. Preheating occurs before the radiation treatment (if any), and additional heating (if any) occurs after the preheating (and radiation) treatment. Examples BC and AA-BB include an ITO electrode at the end of the ink deposit (corresponding to the conductive trace obtained after the preheating, radiation and / or additional heating treatment). For Examples BC and AA-BB, a portion of a layer 703 comprising a plurality of silver nanoparticles is disposed on an absorption layer 323 comprising ITO, and a portion of the layer 703 is disposed on a substrate 103 to form Fig.15 and Fig.13 The device is shown by dashed line 1501a; the second layer 453 includes titanium with a thickness 459 of 100 nm; the metal layer 443 includes copper with a thickness 449 of 150 nm; and the absorber layer 323 includes ITO with an absorber layer thickness 329 of 500 nm. The contact resistance measurements reported in Table 1 used the measured values ​​of 9 samples to determine R trace , R trace Used to calculate contact resistance using the method above.

[0123] In Example A, the layer comprising a plurality of metal nanoparticles was first heated in an oven at 150°C for 30 minutes (“preheating”), and then the glass-based substrate was struck by a laser beam from a CO2 laser containing light having a wavelength of 10.6 μm and a power density of 1,000 W / cm 2 , the maximum size of the corresponding beam spot is 100μm, and the scanning speed is 6,000 millimeters per second (mm / s). The beam spot is scanned on the glass-based substrate 10 times for a total time of 10 minutes, wherein the minimum distance between the layer containing multiple metal nanoparticles and the beam spot is 1 mm. The beam spot is scanned so that it does not hit the layer containing multiple silver nanoparticles. The glass-based substrate has an absorptivity of 90% or more at the wavelength of light of the laser beam emitted from the CO2 laser. The temperature measured on the relative main surface of the glass-based substrate opposite to the position where the layer containing multiple metal nanoparticles is set reaches a maximum temperature of 680°C. In contrast, Examples AA-BB do not include the use of electromagnetic radiation.

[0124] Table 1: Results for examples AB and AA-BB

[0125]

[0126] * = Non-ohmic resistance of about 18Ω to about 50Ω was observed

[0127] Table 1 lists the processing conditions and the line resistance and contact resistance of the resulting conductive traces. Example AA includes a line resistance that is 3.6 times the value of bulk silver. The use of electromagnetic radiation from a CO2 laser in Example AA reduces the line resistance to 1.6 times the value of bulk silver (a reduction of approximately 55% compared to Example AA), even though the preheating is at a lower temperature and for a shorter time. Therefore, the processing of Example A provides a lower line resistance than Example AA in a shorter time than the processing of Example AA. Example AA includes a non-linear (i.e., non-ohmic) resistance ranging from about 18Ω to about 50Ω, which indicates that there is poor contact (e.g., poor adhesion) between the conductive trace and the electrode.

[0128] Example BB includes a line resistance of approximately 8 times the bulk silver value and a contact resistance greater than 20Ω. The additional heat treatment of Example BB is the same as the preheat treatment of Example A, but Example BB does not include the radiation treatment. The radiation treatment reduces the line resistance by approximately 80% compared to Example BB.

[0129] In Example BC, layer 703 is preheated in an oven at 100°C for 1 hour, and then the glass-based substrate is irradiated with electromagnetic radiation from a linear halogen lamp with a linear power density of approximately 150 W / cm. In Example B, the linear halogen lamp is scanned over the absorption layer 10 times at a scanning speed of 1 mm / s in approximately 18 minutes. In Example C, the linear halogen lamp is scanned over the absorption layer 30 times at a scanning speed of 1 mm / s in approximately 54 minutes. For Example BC, the linear halogen lamp is operated at 30% of its rated power (30% of 10 kilowatts) so that the emitted electromagnetic radiation roughly corresponds to blackbody radiation at a temperature of approximately 1400°C and a wavelength of approximately 1 μm to approximately 3 μm. ITO has an absorbance of 40% or more for one or more wavelengths of light from 1 μm to 3 μm (for example, at Fig.17 60% at about 1.1 μm as shown by the middle curve 1707). In Example BC, the resulting conductive trace was additionally heated in an oven maintained at 200° C. for 1 hour.

[0130] As shown in Table 1, Example B includes a contact resistance of 0.3Ω. Compared to Examples AA-BB, Example B includes a contact resistance that is more than 95% less than the contact resistance of Examples AA-BB. This indicates that the radiation treatment of Example BB is able to form good contact between the sintered plurality of silver nanoparticles and the ITO electrode.

[0131] As shown in Table 1, Example C includes a contact resistance of 0.2Ω. The additional radiation treatment of Example C (10 scans in Example B and 30 scans in Example C) reduces the contact resistance compared to Example B. However, the line resistance of Example C is greater than the line resistance of Example B. Nevertheless, Example C includes the lowest contact resistance of Examples AA-BB and BC.

[0132] Fig.18 Shows electromagnetic radiation impact Fig.15 Temperature curves of devices shown, having the same thickness and construction as Example B (curves 1807, 1809 and 1811) or the same as Example B but without the ITO layer (curve 1805). The horizontal axis 1801 is time in minutes and the vertical axis 1803 is temperature in °C. Curves 1805, 1807, 1809 and 1811 are the temperature distribution of the surface of the glass substrate opposite to the irradiation side of the linear halogen lamp. Curves 1807, 1809 and 1811 correspond to the linear halogen lamp operating at 20%, 25% and 30% of the rated power, respectively. As shown in the figure, increasing the power at which the linear halogen lamp is operated increases the temperature of the ITO layer. In contrast, curve 1805 represents the temperature when the linear halogen lamp is operated at 20% to 30% of the rated power, so that the curves for different powers substantially overlap because there is no ITO layer for this case. Curve 1805 shows small fluctuations in temperature, with the highest temperature being below 50°C. Operating the linear halogen lamp at 20%, 25%, and 30% of rated power does not significantly increase the surface temperature corresponding to curve 1805. Therefore, Fig.18 It was shown that the heating of the ITO layer can be varied by changing the power of the electromagnetic radiation source.

[0133] Fig.19 Schematically shows a focused ion beam (FIB) image of a cross section of a conductive trace taken at an angle of 38° relative to the normal direction of the first major surface 105 of the substrate 103. Fig.19 As shown, sintering connects nanoparticles 1903a, 1903b, 1903g, 1903h, and 1903l to locations 1905a-1905f of substrate 1901. In addition, sintering connects nanoparticles to other nanoparticles, such that a group of nanoparticles 1903a-f or 1903h-k are interconnected.

[0134] Figures 20 to 21 Scanning electron microscope (SEM) images of the conductive traces of Examples A and AA are schematically shown, respectively. Fig. 20 As shown, the processing of Example A produces large grains 2003a of agglomerated silver nanoparticles having grain boundaries 2005a between adjacent pairs of grains 2003a and 2003b. Fig. 20 The maximum size of the grains 2003a shown in FIG. 1 is about 5 μm or more. Fig.21As shown, the processing of Example AA includes smaller grains 2101 with grain boundaries and voids 2103 throughout, where the grains or nanoparticles are shown in white and the voids are shown in black. Therefore, the use of electromagnetic radiation produces larger grain sizes, reflecting better sintering, better connectivity, better adhesion, and reduced resistivity of the resulting conductive traces. The above observations can be combined to provide electronic devices and methods of forming conductive traces. The conductive traces in the electronic device can include low resistivity (e.g., contact resistance of about 0.5 ohms or less, line resistance of about 1 ohm / mm or less), which can improve the efficiency of the electronic device. The conductive traces in the electronic device can include good adhesion to the rest of the electronic device (e.g., about 4B or more, about 5B), which can improve the reliability and / or durability of the electronic device. For example, good adhesion and / or low resistivity can be achieved by sintering nanoparticles attached to the surface of the electronic device. In addition, the above characteristics can be used to provide conductive traces comprising sintered nanoparticles, which can be disposed on a substrate with one or more layers located therebetween.

[0135] The method of forming a conductive trace may include striking an absorbing layer with electromagnetic radiation and transferring heat to a plurality of metal nanoparticles to sinter the plurality of metal nanoparticles. Indirect heating of the plurality of metal nanoparticles with electromagnetic radiation rather than directly heating the plurality of metal nanoparticles with electromagnetic radiation means that the metal nanoparticles at the surface of the resulting electronic device are sintered, which reduces resistivity and increases adhesion. Sintering a plurality of metals by striking the absorbing layer with electromagnetic radiation can reduce processing time, which can reduce the cost of manufacturing the final electronic device. Striking the absorbing layer with electromagnetic radiation can allow targeted heating to be located in areas close to the plurality of metal nanoparticles, which can reduce the incidence of damage to other components of the resulting electronic device caused by the sintering process. Striking the absorbing layer with electromagnetic radiation means that the same electromagnetic radiation source and absorbing layer can be used for various types of metal nanoparticles, which makes the process more versatile by reducing the need to optimize conditions for different types of metal nanoparticles. In addition, striking the absorbing layer with electromagnetic radiation means that direct line of sight to the plurality of metal nanoparticles is not required, which can allow the formation of conductive traces having complex shapes and / or as part of a multi-component electronic device.

[0136] Directional terms used herein, such as up, down, right, left, front, back, top, and bottom, are only used with reference to the drawings in which they are drawn and are not intended to imply an absolute orientation.

[0137] It will be understood that the various aspects disclosed may relate to specific features, elements or steps described in conjunction with that particular aspect. It will also be understood that features, elements or steps, although described in conjunction with one aspect, may be interchanged or combined with alternative aspects in various combinations or combinations not shown or described.

[0138] It will be appreciated that the terms "the," "a," or "an" as used herein mean "at least one," and should not be limited to "only one," unless expressly stated otherwise. For example, reference to "a component" encompasses aspects having two or more such components, unless the context clearly indicates otherwise. Similarly, "plurality" is intended to mean "more than one."

[0139] The word "about" used herein means that the quantity, size, formula, parameter, and other quantities and characteristics are not and need not be exact, but may be approximate and / or larger or smaller as needed, reflecting tolerances, conversion factors, rounding, measurement errors, etc., and other factors known to those skilled in the art. The range can be expressed herein as starting from "about" a specific value, and / or ending at "about" another specific value. When such a range is expressed, the aspect includes from a specific value and / or to another specific value. Similarly, when a value is expressed as an estimate, by using the prefix "about", it will be understood that the specific value forms another aspect. Regardless of whether the numerical value or endpoint of the range in the specification records "about", the numerical value or endpoint of the range is meant to include two aspects: one modified by "about" and one not modified by "about". It will be further understood that the endpoint of each range is important to the other endpoint and is independent of the other endpoint.

[0140] As used herein, the terms "substantially," "substantially," and variations thereof, are intended to indicate that a described feature is equal to or approximately equal to a value or description. For example, a "substantially flat" surface means a surface that is labeled as flat or approximately flat. Furthermore, as defined above, "substantially similar" means labeling two values ​​as being equal or approximately equal. In aspects, "substantially similar" may label values ​​that are within 10% of each other, such as within 5% of each other, or within 2% of each other.

[0141] Unless explicitly stated otherwise, any method described herein should not be interpreted as requiring that its steps be performed in a specific order. Therefore, if a method claim does not actually state the order in which its steps are to be followed, or if the steps are not explicitly stated in the claim or description to be limited to a specific order, no order is intended to be inferred.

[0142] Although the conjunction "comprising" may be used to disclose various features, elements, or steps of a particular aspect, it should be understood that alternative aspects are implied, including aspects that may be described using the conjunction "consisting of" or "consisting essentially of." Thus, for example, alternative aspects implied for a device comprising A+B+C include aspects where the device consists of A+B+C, and aspects where the device consists essentially of A+B+C. As used herein, the terms "including" and "comprising," and variations thereof, should be construed as synonymous and open ended unless otherwise noted.

[0143] The above aspects (and features of these aspects) are merely exemplary and may be provided alone or in any combination with any one or more of the aspects provided herein without departing from the scope of the disclosure.

[0144] It will be apparent to those skilled in the art that various modifications and variations may be made to the disclosure without departing from the spirit and scope of the disclosure. Therefore, the disclosure is intended to cover modifications and variations of the disclosure as long as such modifications and variations are within the scope of the appended claims and their equivalents.

Claims

1. An electronic device, comprising: a substrate comprising a first major surface; as well as A conductive trace is disposed on at least the first major surface of the substrate, the conductive trace comprising sintered metal nanoparticles, the conductive trace comprising a line resistance of about 1 ohm / mm or less. 2 . The electronic device of claim 1 , further comprising an absorber layer located between the conductive trace and the first major surface of the substrate. 3 . The electronic device of claim 2 , wherein the conductive trace has an adhesion force to the absorption layer of about 4B or greater.

4. The electronic device of any one of claims 1-3, wherein the conductive trace extends around an edge of the substrate such that a portion of the conductive trace is further disposed on a second major surface of the substrate opposite the first major surface.

5. The electronic device of any one of claims 1-3, wherein an electrically insulating layer is disposed on at least a portion of the conductive trace.

6. The electronic device of any one of claims 1-5, further comprising a pair of electrodes, the conductive trace being in contact with each electrode, wherein the conductive trace has a contact resistance of about 0.5 ohms or less.

7. The electronic device of claim 6, wherein the contact resistance ranges from about 0.1 ohms to about 0.3 ohms.

8. The electronic device of any one of claims 1-7, wherein the line resistance ranges from about 0.2 Ohm / mm to about 0.5 Ohm / mm. 9 . The electronic device of claim 1 , wherein a ratio of the line resistance of the conductive trace to a line resistance of a bulk including the same material as the conductive trace is in a range of 1 to about 5. 10 . The electronic device of claim 9 , wherein a ratio of the line resistance of the conductive trace to the line resistance of the block including the same material as the conductive trace is in a range of about 1.1 to about 3.

11. The electronic device according to any one of claims 1 to 10, wherein the substrate comprises a glass-based substrate or a ceramic-based substrate.

12. The electronic device of any one of claims 1-11, wherein the conductive trace consists essentially of silver or copper.

13. A method of forming a conductive trace, the method comprising: Disposing a plurality of metal nanoparticles on the absorption layer; impinging the absorbing layer with electromagnetic radiation; and Heat is transferred from the absorber layer to the plurality of metallic nanoparticles to sinter the plurality of metallic nanoparticles to form the conductive traces.

14. The method of claim 13, wherein the absorber layer comprises a glass-based material or a ceramic-based material.

15. The method of claim 13, wherein the absorber layer comprises indium tin oxide.

16. The method of any one of claims 13-15, wherein the conductive trace has an adhesion to the absorber layer of about 4B or greater.

17. The method of any one of claims 13, 15 or 16, further comprising: The absorption layer is disposed on a substrate.

18. A method of forming a conductive trace, the method comprising: disposing a plurality of metal nanoparticles on a first surface region of the first layer; Disposing an absorption layer on the first surface region such that a minimum distance between the absorption layer and the plurality of metal nanoparticles along a direction parallel to the first surface region ranges from about 100 nanometers to about 5 millimeters; impinging the absorbing layer with electromagnetic radiation; and Heat is transferred from the absorber layer to the plurality of metal nanoparticles through the first layer to sinter the plurality of metal nanoparticles to form the conductive traces.

19. The method of claim 18, further comprising: The absorber layer is removed after forming the conductive traces.

20. The method of any of claims 18-19, wherein the absorber layer comprises indium tin oxide.

21. The method of any one of claims 18-20, wherein the first layer is disposed on a substrate.

22. The method of any one of claims 18-21, wherein the first layer comprises a glass-based material or a ceramic-based material.

23. The method of claim 17 or claim 21, wherein the substrate comprises a glass-based material or a ceramic-based material.

24. The method of any one of claims 17, 21 or 23, wherein the plurality of metal nanoparticles are disposed on a first major surface of the substrate, an edge of the substrate, and a second major surface of the substrate opposite to the first major surface, wherein the impacting the absorbing layer and the transferring heat form the conductive traces disposed on the first major surface, the edge, and the second major surface such that the conductive traces surround the edge of the substrate.

25. The method of any of claims 13-24, wherein the conductive trace is attached to a pair of electrodes and the conductive trace comprises a contact resistance of about 0.5 Ohms or less.

26. The method of claim 25, wherein the contact resistance is in a range of about 0.1 ohms to about 0.3 ohms.

27. The method of any of claims 13-26, wherein the conductive trace comprises a line resistance of about 1 Ohm / mm or less.

28. The method of claim 27, wherein the line resistance ranges from about 0.2 ohms / mm to about 0.5 ohms / mm.

29. The method of any one of claims 13-26, wherein a ratio of a line resistance of the conductive trace to a line resistance of a bulk comprising the same material as the plurality of metallic nanoparticles ranges from 1 to about 5. 30 . The method of claim 29 , wherein a ratio of the line resistance of the conductive trace to the line resistance of the bulk comprising the same material as the plurality of metallic nanoparticles ranges from about 1.1 to about 3.

31. The method of any one of claims 13-30, wherein the electromagnetic radiation comprises one or more wavelengths, the one or more wavelengths being about 700 nanometers or longer.

32. The method of claim 31 , wherein the one or more wavelengths are in the range of about 1 micron to about 5 microns.

33. The method of claim 31, wherein the one or more wavelengths are in the range of about 5 microns to about 12 microns.

34. The method of any one of claims 31-33, wherein the absorbing layer has an absorbance of about 20% or more for at least one of the one or more wavelengths, and the plurality of metal nanoparticles have an absorbance for the at least one wavelength that is less than the corresponding absorbance of the absorbing layer.

35. The method of claim 34, wherein the absorbance of the absorbing layer at at least one wavelength is about 40% or more.

36. The method of any one of claims 13-35, wherein impinging the absorbing layer with the electromagnetic radiation does not impinge on at least a portion of the plurality of metallic nanoparticles.

37. The method of claim 36, wherein impinging the absorbing layer with the electromagnetic radiation does not impinge on any of the plurality of metallic nanoparticles.

38. The method of any of claims 29-37, wherein the electromagnetic radiation impinging the absorbing layer comprises a power density ranging from about 100 Watts / cm2 to about 50,000 Watts / cm2.

39. The method of any one of claims 13-38, wherein impinging the absorbing layer with the electromagnetic radiation occurs for about 30 seconds to about 15 minutes.

40. The method of any one of claims 13-39, wherein the plurality of metal nanoparticles comprises one or more of silver, gold, aluminum, copper, nickel, platinum, or tin.

41. The method of claim 40, wherein the plurality of metallic nanoparticles consists essentially of silver or copper.

42. The method of any one of claims 13-41, wherein the median largest dimension of the plurality of metal nanoparticles is in a range from about 10 nanometers to about 120 nanometers.

43. The method of claim 42, wherein the median maximum dimension of the plurality of metal nanoparticles is in a range from about 50 nanometers to about 100 nanometers.

44. The method of any one of claims 13-43, wherein providing the plurality of metal nanoparticles comprises: An ink comprising a solvent and the plurality of metal nanoparticles is provided, wherein a concentration of the plurality of metal nanoparticles in the ink ranges from about 10 wt % to about 70 wt %.

45. The method of any of claims 13-44, wherein the conductive trace comprises a thickness ranging from about 0.1 microns to about 10 microns.

46. ​​The method of any of claims 13-45, wherein the conductive trace comprises a width ranging from about 1 micron to about 100 microns.

47. The method of any one of claims 13-46, further comprising: An electrically insulating layer is disposed over at least a portion of the conductive trace.

48. The method of any one of claims 13-47, further comprising: Prior to impacting the absorbent layer but after disposing the plurality of metallic nanoparticles, the plurality of metallic nanoparticles are heated at a first temperature of about 80° C. to about 150° C. for a first period of time of about 15 minutes to about 2 hours.

49. The method of claim 48, wherein the first period of time is in the range of about 30 minutes to about 1 hour.

50. The method of any one of claims 13-49, further comprising: After forming the conductive trace, the conductive trace is heated at a second temperature of about 150° C. to about 200° C. for about 30 minutes to about 2 hours.

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