Method for constructing direct current characteristic temperature effect model based on EEHEMT

Abstract

The invention discloses a method for constructing a direct-current characteristic temperature effect model based on an EEHEMT, and the method comprises the steps: carrying out the pulse direct-current characteristic test of a GaN HEMT in a set temperature range through a cooled high and low temperature probe station cavity, and obtaining the direct-current characteristic test data, which comprises the output characteristic test data and the transfer characteristic test data; based on the DC characteristic test data, extracting parameters of an EEHEMT equivalent circuit model, obtaining model parameters influenced by the temperature, namely key model parameters, and establishing a scaling relation between the key model parameters and the temperature; and adding the scaling relation between the key model parameters and the temperature into the EEHEMT equivalent circuit model to obtain a direct current characteristic temperature effect model. According to the method, the output characteristic and the transfer characteristic of the GaN device can be accurately represented, and the method plays a crucial role in the aspects of performance analysis and high-reliability design of a direct-current circuit.

Description

Technical Field

[0001] The present invention relates to the technical field of modeling of third-generation wide bandgap semiconductor radio frequency GaN HEMT devices, and in particular to a method for constructing a direct current characteristic temperature effect model based on EEHEMT. Background Art

[0002] With the good performance of the third-generation semiconductor materials, GaN HEMT (High Electron Mobility Transistors) is widely used in high-frequency and high-power fields, and shows great working potential in extreme ambient temperatures. In order to effectively optimize device processes and structures, guide circuit design and improve circuit performance, an accurate GaN HEMT model is particularly important. GaN HEMT is often used in whole systems with different ambient temperatures, and its performance will also change significantly with changes in ambient temperature.

[0003] In 2008, Jie Deng et al. ds The parameters in the model are fitted with temperature-related fitting parameters, and a variable temperature large signal model is established based on the Angelov model. However, the Angelov model uses the same set of parameters to characterize DC transconductance and AC transconductance, making parameter extraction difficult, and the model does not take into account the low temperature characteristics of GaNHEMT. ds The trap effect control parameter was added to the model, and two thermal subcircuits were used to establish a model including the influence of high and low temperature environments. The simulation verification was carried out at a temperature of -55℃ to 175℃, but the model topology is relatively complex and prone to simulation convergence problems. In 2016, Sudip Ghosh et al. proposed a drain-source related Rd / s model based on the ASM-HEMT model, fitted temperature parameters at different temperatures (-20℃, 25℃, 50℃, 100℃, 150℃), and verified the accuracy of the model in a wide temperature range. However, the ASM-HEMT model is complex and has many characterization parameters, which seriously affects the simulation speed and is prone to convergence problems.

[0004] At present, the EEHEMT equivalent circuit model can reduce the complexity of model parameter extraction, shorten the model extraction time, and can accurately characterize the electrical characteristics of GaN HEMT, and has good convergence in the circuit simulation process. Although the EEHEMT model itself has a temperature scaling function, it uses an ideal scaling law and does not establish temperature correlation for some key parameters, so it cannot accurately simulate the electrical characteristics of GaN HEMT at different temperatures. Summary of the invention

[0005] The purpose of the present invention is to provide a method for constructing a DC characteristic temperature effect model based on EEHEMT, and to propose a temperature scaling function for key parameters in the drain-source current formula of the EEHEMT model. By reasonably scaling the key parameters and temperature, the drain-source current formula can accurately reflect the changes in the electrical performance of GaN devices at different temperatures, which has important guiding significance for the design of GaN devices working under extreme ambient temperatures.

[0006] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0007] A method for constructing a DC characteristic temperature effect model based on EEHEMT, comprising the following steps:

[0008] Reduce the temperature in the high and low temperature probe chamber to the lowest temperature within the set temperature range.

[0009] Using the cooled high and low temperature probe station cavity, a pulsed DC characteristic test is performed on the GaN HEMT within a set temperature range to obtain DC characteristic test data, which includes output characteristic test data and transfer characteristic test data.

[0010] Based on the DC characteristic test data, the parameters of the EEHEMT equivalent circuit model are extracted, the model parameters affected by temperature are obtained, namely the key model parameters, and the scaling relationship between the key model parameters and temperature is established.

[0011] The scaling relationship between key model parameters and temperature is added to the EEHEMT equivalent circuit model to obtain the DC characteristic temperature effect model, completing the characterization of the output characteristics and transfer characteristics of GaN HEMT at different temperatures.

[0012] Furthermore, the EEHEMT equivalent circuit model divides the drain-source current into four different regions according to the transconductance distribution. The specific expression is:

[0013]

[0014] P diss =I′ ds ·V ds

[0015]

[0016] Where gmmax is the peak transconductance, V gs Represents the gate-source voltage, V to Represents the threshold voltage corresponding to a specific drain-source voltage, V ch Indicates the gate-source voltage when the transconductance parameter no longer affects the IV curve, V gorepresents the gate-source voltage corresponding to the maximum transconductance under a specific drain-source voltage, kapa represents the output conductance, V ds Represents the drain-source voltage, V sat Indicates the saturation voltage parameter, I ds represents the drain-source current, and peff represents the channel self-heating parameter.

[0017] Define variable V t 、V g and V c for:

[0018]

[0019] V c =V co +mu·(V dso -V ds )

[0020] Where gamma represents the transconductance parameter, V dso Indicates the drain-source voltage when the device is working normally, V co represents the gate-source voltage corresponding to the start of the decrease of transconductance under a specific drain-source voltage, mu represents the transconductance compensation parameter, V t Represents the threshold voltage at different drain-source voltages, V g It represents the gate-source voltage corresponding to the maximum transconductance under different drain-source voltages, V c It represents the gate-source voltage corresponding to when the transconductance starts to decrease under different drain-source voltages.

[0021] For the intermediate variable V(V gs )、G(V gs ) and I dsv (V gs ), defined as:

[0022] V(V gs )=(V gs -V ch )·(1+gamma·(V dso -V ds ))

[0023]

[0024] Wherein, deltgm represents the slope of the transconductance compression characteristic, and α represents the change parameter of the transconductance from the saturation region to the compression region.

[0025] Furthermore, in the extracted EEHEMT equivalent circuit model parameters, the source contact resistance R s , leakage contact resistance R d , the threshold voltage V corresponding to a specific drain-source voltage to, the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go , peak transconductance gmmax and self-heating parameter peff will change with temperature, and these model parameters are defined as key model parameters.

[0026] Furthermore, the source contact resistance R s and drain contact resistance R d The resistance value is extracted through small signal S parameters, R s and R d The scaling relationship with temperature is expressed as:

[0027] R s (T) = R s +(TT nom )*trs

[0028] R d (T) = R d +(TT nom )*trd

[0029] Among them, trs represents R s Temperature effect parameter, trd represents R d Temperature effect parameter, T represents the actual operating temperature of GaN HEMT, T nom Indicates normal temperature.

[0030] Furthermore, the threshold voltage V corresponding to a specific drain-source voltage to The scaling relationship with temperature is expressed as:

[0031] V to (T) = V to *[1+tvto*(TT nom )]

[0032] Among them, tvto represents V to Temperature effect parameters.

[0033] Furthermore, the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage is go The scaling relationship with temperature is expressed as:

[0034] V go (T) = V go *[1+tvgo*(TT nom )]

[0035] Among them, tvgo represents V go Temperature effect parameters.

[0036] Furthermore, the scaling relationship between the peak transconductance gmmax and the temperature is expressed as:

[0037]

[0038] Among them, tgmmax1 and tgmmax2 both represent the temperature effect parameters of gmmax.

[0039] Furthermore, the scaling relationship between the self-heating parameter peff and temperature is expressed as:

[0040]

[0041] Wherein, tpeff represents the temperature effect parameter of peff.

[0042] Furthermore, the present invention also proposes an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method for constructing a DC characteristic temperature effect model based on EEHEMT when executing the computer program.

[0043] Furthermore, the present invention also proposes a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for constructing a DC characteristic temperature effect model based on EEHEMT is executed.

[0044] Compared with the prior art, the present invention adopts the above technical solution and has the following technical effects:

[0045] (1) The present invention establishes a source contact resistance R s , leakage contact resistance R d , the threshold voltage V corresponding to a specific drain-source voltage to , the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go , peak transconductance gmmax, self-heating parameter peff and ambient temperature. The DC characteristic temperature effect model finally proposed can accurately reflect the changing trend of GaN HEMT electrical performance with temperature.

[0046] (2) The present invention adds the relationship between each key parameter and temperature into the EEHEMT equivalent circuit model through Verilog-A code. The DC characteristic temperature effect model finally proposed can accurately characterize the DC characteristics of GaN HEMT devices at different temperatures, which has important guiding significance for the design of GaN devices working under extreme ambient temperatures. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 It is a transconductance curve diagram of the EEHEMT model of the GaN device in the embodiment of the present invention.

[0048] Figure 23 is a graph showing the transfer characteristics of GaN HEMT at different temperatures according to an embodiment of the present invention.

[0049] Figure 3 is a graph showing output characteristic curves of GaN HEMT at different temperatures in an embodiment of the present invention.

[0050] Figure 4 is R at different temperatures in the embodiments of the present invention. d / R s The extraction result curve graph.

[0051] Figure 5 is V at different temperatures in the embodiment of the present invention. to The extraction result curve graph.

[0052] Figure 6 is V at different temperatures in the embodiment of the present invention. go The extraction result curve graph.

[0053] Figure 7 It is a graph showing the extraction results of gmmax at different temperatures in an embodiment of the present invention.

[0054] Figure 8 It is a curve diagram of the extraction results of peff at different temperatures in the embodiment of the present invention.

[0055] Fig. 9 1 is a curve diagram of the fitting results of the GaN HEMT output characteristics at a temperature of T = -55°C in an embodiment of the present invention.

[0056] Fig.10 1 is a curve diagram of the fitting results of GaN HEMT output characteristics at temperature T = -25°C in an embodiment of the present invention.

[0057] Fig.11 1 is a curve diagram of the fitting results of the GaN HEMT output characteristics at a temperature of T=25° C. in an embodiment of the present invention.

[0058] Fig.12 1 is a curve diagram of the fitting results of GaN HEMT output characteristics at temperature T=75° C. in an embodiment of the present invention.

[0059] Fig.13 is V at temperature T = -55°C in the embodiment of the present invention ds =28V GaN HEMT transfer characteristics fitting result curve.

[0060] Fig.14 is V at temperature T = -25°C in the embodiment of the present invention ds =28V GaN HEMT transfer characteristics fitting result curve.

[0061] Fig.15is V at temperature T = 25°C in the embodiment of the present invention ds =28V GaN HEMT transfer characteristics fitting result curve.

[0062] Fig.16 is V at temperature T = 75°C in the embodiment of the present invention ds =28V GaN HEMT transfer characteristics fitting result curve. DETAILED DESCRIPTION

[0063] The present invention will be further described below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and cannot be used to limit the protection scope of the present invention.

[0064] GaN HEMT is often used in whole systems with different ambient temperatures, and its performance will also change significantly with the change of ambient temperature. Therefore, it is crucial to establish a large signal model that can accurately characterize the electrical performance of GaN HEMT at different ambient temperatures for device input and output circuits and high reliability design. Although the EEHEMT model itself has a temperature scaling function, it cannot accurately simulate the electrical characteristics of GaN HEMT at different temperatures because it uses an ideal scaling law.

[0065] To achieve the above object, the present invention proposes a method for constructing a DC characteristic temperature effect model based on EEHEMT, and the specific steps are as follows:

[0066] In order to prevent the gas from liquefying and forming condensation beads on the surface of the device, the temperature in the high and low temperature probe station cavity needs to be lowered to -55°C first, and then raised to various temperature points in turn for testing.

[0067] The pulsed DC characteristic test of the 400 μm GaN HEMT of this embodiment was performed at four temperatures of -55°C, -25°C, 25°C and 75°C using the TS2000-SE high and low temperature probe station of MPI Company and the IVCAD system of Maury Company to obtain DC characteristic test data, which includes output characteristic test data and transfer characteristic test data.

[0068] The EEHEMT equivalent circuit model divides the drain-source current into four different regions according to the transconductance distribution, such as Figure 1 As shown, they are the cut-off region (V gs ≤V t ), linear region (V t <V gs ≤V g ), saturation region (V g <V gs ≤V c ) and compression zone (V gs >V c), gn represents transconductance, and the specific expression of drain-source current is:

[0069]

[0070] P diss =I′ ds ·V ds

[0071]

[0072] Where gmmmax is the peak transconductance, V gs Represents the gate-source voltage, V to Represents the threshold voltage corresponding to a specific drain-source voltage, V ch Indicates the gate-source voltage when the transconductance parameter no longer affects the IV curve, V go represents the gate-source voltage corresponding to the maximum transconductance under a specific drain-source voltage, kapa represents the output conductance, V ds Represents the drain-source voltage, V sat Indicates the saturation voltage parameter, I ds represents the drain-source current, and peff represents the channel self-heating parameter.

[0073] Define variable V t 、V g and V c for:

[0074]

[0075] V c =V co +mu·(V dso -V ds )

[0076] Where gamma represents the transconductance parameter, V dso Indicates the drain-source voltage when the device is working normally, V co represents the gate-source voltage corresponding to the start of the decrease of transconductance under a specific drain-source voltage, mu represents the transconductance compensation parameter, V t Represents the threshold voltage at different drain-source voltages, V g It represents the gate-source voltage corresponding to the maximum transconductance under different drain-source voltages, V c It represents the gate-source voltage corresponding to when the transconductance starts to decrease under different drain-source voltages.

[0077] For the intermediate variable V(V gs )、G(V gs ) and I dsv (V gs ), defined as:

[0078] V(Vgs )=(V gs -V ch )·(1+gamma·(V dso -V ds ))

[0079]

[0080] Wherein, deltgm represents the slope of the transconductance compression characteristic, and α represents the change parameter of the transconductance from the saturation region to the compression region.

[0081] Based on the DC characteristic test data, the parameters of the EEHEMT equivalent circuit model are extracted to obtain the model parameters affected by temperature, which are the key model parameters, and the scaling relationship between the key model parameters and temperature is established. The specific contents are:

[0082] like Figure 2 , Figure 3 As shown in the figure, when the temperature changes from low to high, the threshold voltage of GaNHEMT drifts negatively, the transconductance decreases, the drain output current decreases, and the knee voltage moves positively. The main reason is that the lattice scattering probability increases and the electron mobility decreases. In order to enable the model to accurately characterize the above changes, this embodiment extracts model parameters for the DC characteristic test data at four temperatures: -55℃, -25℃, 25℃, and 75℃. Through the model parameter extraction, it is found that the source contact resistance R s , leakage contact resistance R d , the threshold voltage V corresponding to a specific drain-source voltage to , the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go , peak transconductance gmmax and self-heating parameter peff will change with temperature. When the temperature rises from -55℃ to 75℃, R s Increased from 28.2mΩ to 80mΩ, R d Increased from 1.77Ω to 2.293Ω, V to From -2.356V to -2.563V, V go It increases from -1.765 V to -1.713 V, gmmax decreases from 156 mS to 129.5 mS, and peff decreases from 34.2 W to 22.68 W. These model parameters are defined as key model parameters, and thus the scaling relationship between the key model parameters and temperature is established.

[0083] (1)R s / R d Temperature Effect

[0084] As the temperature rises, the 2DEG drift speed decreases, the source / drain series resistance increases, and the channel electric field strength decreases. At this time, a higher drain voltage is required to make the electrons reach the saturation speed, so the knee voltage will move forward. The source and drain contact resistance values ​​can be extracted through small signal S parameters. The extraction results are as follows: Figure 4 As shown, R d and R s It increases linearly with increasing temperature, so R d , R s The scaling relationship with temperature can be expressed as:

[0085] R s (T) = R s +(TT nom )*trs

[0086] R d (T) = R d +(TT nom )*trd

[0087] Among them, trs represents R s Temperature effect parameter, trd represents R d Temperature effect parameter, T represents the actual operating temperature of GaN HEMT, T nom Indicates normal temperature.

[0088] In this embodiment, T nom =25℃.

[0089] For GaN HEMT, there are studies reporting both positive and negative correlations between the threshold voltage and ambient temperature at a specific drain-source voltage. to It decreases with increasing temperature, showing a negative correlation, and the relationship between the threshold voltage and temperature corresponding to a specific drain-source voltage can be expressed linearly, such as Figure 5 As shown, therefore, V to The scaling relationship with temperature can be expressed as:

[0090] V to (T) = V to *[1+tvto*(TT nom )]

[0091] Among them, tvto represents V to Temperature effect parameters.

[0092] When the temperature rises, the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go As it increases, the trend is as follows Figure 6 As shown, V goThe scaling relationship with temperature can be expressed as:

[0093] V go (T) = V go *[1+tvgo*(TT nom )]

[0094] Among them, tvgo represents V go Temperature effect parameters.

[0095] The peak transconductance gmmax varies with temperature as Figure 7 As shown, the higher the temperature, the steeper the peak transconductance decreases. The scaling relationship between gmmax and temperature is expressed as:

[0096]

[0097] Among them, tgmmax1 and tgmmax2 both represent the temperature effect parameters of gmmax.

[0098] For GaN HEMT, the degree of current collapse will change with different ambient temperatures, such as Figure 8 As shown. When the temperature rises, the current collapse becomes larger and larger, that is, the value of the self-heating parameter peff becomes smaller and smaller. At the same time, peff is exponentially related to the ambient temperature, and the scaling relationship between peff and temperature is expressed as:

[0099]

[0100] Wherein, tpeff represents the temperature effect parameter of peff.

[0101] The scaling relationship between key model parameters and temperature is added to the EEHEMT equivalent circuit model through Verilog-A code to obtain the DC characteristic temperature effect model, which realizes the characterization of the output characteristics and transfer characteristics of GaN HEMT at different temperatures. The DC characteristics mainly include output characteristics and transfer characteristics. The working condition of the output characteristics is the drain-source voltage V ds =0~36V, step size step=2V, gate-source voltage V gs =-3.0~0V, step length step=0.2V; the working condition of the transfer characteristic is the gate-source voltage V gs =-4~0V, step size step=0.1V, drain-source voltage V ds =0~36V, step length step=4V.

[0102] Fig. 9 , Fig.10 , Fig.11 , Fig.12The fitting results of GaN HEMT output characteristics at four temperatures: -55℃, -25℃, 25℃, and 75℃. Fig.13 , Fig.14 , Fig.15 , Fig.16 The fitting results of GaN HEMT transfer characteristics at four temperatures of -55°C, -25°C, 25°C, and 75°C. The fitting results show that the fitting errors of the output characteristics and transfer characteristics are both within 3%, indicating that the DC characteristic temperature effect model proposed in the present invention can accurately reflect the performance trend of GaN devices at different temperatures, and can accurately characterize the DC characteristics of GaN devices at different temperatures, which is of great guiding significance for the DC performance analysis and high reliability design of circuits at different temperatures.

[0103] The embodiment of the present invention further provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor. It should be noted that when the processor executes the computer program, the specific steps of the method provided in the embodiment of the present invention are corresponding to the specific steps of the method provided in the embodiment of the present invention, and the processor has the functional modules and beneficial effects corresponding to the execution method. For technical details not described in detail in this embodiment, please refer to the method provided in the embodiment of the present invention.

[0104] The embodiment of the present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program. It should be noted that when the computer program is executed by the processor, it corresponds to the specific steps of the method provided in the embodiment of the present invention, and has the functional modules and beneficial effects corresponding to the execution method. For technical details not described in detail in this embodiment, please refer to the method provided in the embodiment of the present invention.

[0105] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for constructing a DC characteristic temperature effect model based on EEHEMT, characterized in that: include: Lower the temperature in the high and low temperature probe station cavity to the lowest temperature within the set temperature range; Using the cooled high and low temperature probe station cavity, a pulsed DC characteristic test is performed on the GaN HEMT within a set temperature range to obtain DC characteristic test data, which includes output characteristic test data and transfer characteristic test data; Based on the DC characteristic test data, the parameters of the EEHEMT equivalent circuit model are extracted to obtain the model parameters affected by temperature, which are the key model parameters, and the scaling relationship between the key model parameters and temperature is established; The scaling relationship between key model parameters and temperature is added to the EEHEMT equivalent circuit model to obtain the DC characteristic temperature effect model, completing the characterization of the output characteristics and transfer characteristics of GaN HEMT at different temperatures.

2. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: The set temperature range is -55℃~+125℃; The EEHEMT equivalent circuit model divides the drain-source current into four different regions according to the transconductance distribution. The specific expression is: P diss =I’ ds ·V ds Where gmmax is the peak transconductance, V gs Represents the gate-source voltage, V to Represents the threshold voltage corresponding to a specific drain-source voltage, V ch Indicates the gate-source voltage when the transconductance parameter no longer affects the IV curve, V go represents the gate-source voltage corresponding to the maximum transconductance under a specific drain-source voltage, kapa represents the output conductance, V ds Represents the drain-source voltage, V sat Indicates the saturation voltage parameter, I ds represents the drain-source current, peff represents the channel self-heating parameter; Define variable V t 、V g and V c for: V c =V co +mu·(V dso -V ds ) Where gamma represents the transconductance parameter, V ds o represents the drain-source voltage when the device is working normally, V co represents the gate-source voltage corresponding to the start of the decrease of transconductance under a specific drain-source voltage, mu represents the transconductance compensation parameter, V t Represents the threshold voltage at different drain-source voltages, V g It represents the gate-source voltage corresponding to the maximum transconductance under different drain-source voltages, V c Indicates the gate-source voltage corresponding to when the transconductance starts to decrease under different drain-source voltages; For the intermediate variable V(V gs )、G(V gs ) and I dsv (V gs ), defined as: V(V gs )=(V gs -V ch )·(1+gamma·(V dso -V ds )) Wherein, deltgm represents the slope of the transconductance compression characteristic, and α represents the change parameter of the transconductance from the saturation region to the compression region.

3. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: Among the extracted EEHEMT equivalent circuit model parameters, the source contact resistance R s , leakage contact resistance R d , the threshold voltage V corresponding to a specific drain-source voltage to , the gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go , peak transconductance gmmax and self-heating parameter peff will change with temperature, and these model parameters are defined as key model parameters.

4. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: Source contact resistance R s and drain contact resistance R d The resistance value is extracted through small signal S parameters, R s and R d The scaling relationship with temperature is expressed as: R s (T)=R s +(T-T nom )*trs R d (T)=R d +(T-T nom )*trd Among them, trs represents R s Temperature effect parameter, trd represents R d Temperature effect parameter, T represents the actual operating temperature of GaN HEMT, T nom Indicates normal temperature.

5. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: The threshold voltage V corresponding to a specific drain-source voltage to The scaling relationship with temperature is expressed as: V to (T)=V to *[1+tvto*(T-T nom )] Among them, tvto represents V to Temperature effect parameter, T represents the actual operating temperature of GaN HEMT, T nom Indicates normal temperature.

6. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: The gate-source voltage V corresponding to the maximum transconductance under a specific drain-source voltage go The scaling relationship with temperature is expressed as: V go (T)=V go *[1+tvgo*(T-T nom )] Among them, tvgo represents V go Temperature effect parameter, T represents the actual operating temperature of GaN HEMT, T nom Indicates normal temperature.

7. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: The scaling relationship between the peak transconductance gmmax and temperature is expressed as: Among them, tgmmax1 and tgmmax2 are the temperature effect parameters of gmmax, T represents the actual operating temperature of GaN HEMT, and T nom Indicates normal temperature.

8. The method for constructing a DC characteristic temperature effect model based on EEHEMT according to claim 1, characterized in that: The scaling relationship between the self-heating parameter peff and temperature is expressed as: Where tpeff represents the temperature effect parameter of peff, T represents the actual operating temperature of GaN HEMT, and T nom Indicates normal temperature.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method for constructing a DC characteristic temperature effect model based on EEHEMT according to any one of claims 1 to 8 are implemented.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the method for constructing a DC characteristic temperature effect model based on EEHEMT according to any one of claims 1 to 8 is executed.

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