Method for preparing single-sided and double-sided carrier tape using double-sided copper-clad PI material

Abstract

The present invention relates to the field of IC card carrier technology, and specifically to a method for preparing single-sided and double-sided carriers using double-sided copper-clad PI materials. The present invention includes the steps of substrate selection, stamping, pre-treatment, dry film pressing, exposure, development, etching, laser punching, cleaning, electroplating and slitting, and the carrier substrate of the double-sided copper-clad PI material is finally prepared into a single-sided and double-sided carrier with a top column force greater than 80N, thereby simplifying the normal double-sided carrier production process and improving production efficiency. The carrier substrate of the present invention uses recyclable double-sided copper-clad PI material to replace non-recyclable epoxy resin glass fiber cloth, which is beneficial to environmental protection; using double-sided copper-clad PI material to make carrier products, since the pressure welding surface will etch away the copper and the PI surface is rough, it can solve the problem that the top column force of the single-piece PI material does not meet the standard; it can simplify the process flow of double-sided products, improve production efficiency, and save energy.

Description

Technical Field

[0001] The invention relates to the technical field of IC card carrier tapes, and in particular to a method for preparing single-sided and double-sided carrier tapes by utilizing double-sided copper-clad PI materials. Background Art

[0002] Epoxy resin fiberglass cloth is often used in the production of existing IC card carriers. It is a thermosetting material that cannot be recycled and reused, and its long-term use puts a burden on the environment. In contrast, PI material, as a thermoplastic material, is recyclable and more environmentally friendly. However, due to the self-lubricating property of a single piece of PI material, the top column force of the carrier product is insufficient. The standard requires >80N, while the top column force of untreated PI material is only about 20N, which cannot meet the requirements. To solve these problems, existing technologies such as Chinese patent CN 110752160 A propose a direct packaging process to simplify the process through double-sided exposure. However, this solution still uses non-recyclable epoxy resin fiberglass cloth, resulting in waste of resources and environmental problems. At the same time, when preparing single-sided and double-sided carriers using traditional processes, there are problems such as complex processes, low efficiency and substandard top column force, which urgently need further improvement. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a method for preparing single-sided and double-sided carrier tapes by using double-sided copper-clad PI materials.

[0004] The technical solution adopted in the present invention is as follows:

[0005] A method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials comprises the following steps:

[0006] S1. Substrate selection: Double-sided copper-clad PI material is selected as the carrier tape substrate;

[0007] S2. Stamping: Stamping the carrier tape substrate to form edge perforations on the double-sided copper-clad PI material;

[0008] S3. Pretreatment: Clean the carrier substrate by washing with water to remove surface contamination, and then micro-etch with dilute sulfuric acid to remove the surface oxide layer;

[0009] S4, dry film pressing: Press the dry film on the carrier substrate, and use a laminator to apply the dry film to the contact surface and welding surface of the carrier substrate;

[0010] S5. Exposure: Expose the dry film by vacuuming and irradiating it with ultraviolet light to transfer the pattern on the film to the dry film.

[0011] S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film;

[0012] S7, etching: etching the developed carrier substrate, using an acidic copper chloride solution to dissolve and corrode the copper exposed after development;

[0013] S8, laser punching: laser punching is performed on the etched carrier substrate, and the PI material in the center of the copper ring is removed by laser equipment to expose the copper layer of the carrier substrate;

[0014] S9, cleaning: Clean the carrier substrate to remove the copper oxide layer at a cleaning speed of 5-7 m / min;

[0015] S10, electroplating: performing gold plating on the contact surface of the carrier substrate and soft gold electroplating on the bonding surface;

[0016] S11. Cutting: Cut the carrier tape substrate by a cutting device to obtain single-sided and double-sided carrier tapes with a width of 35 cm.

[0017] This technical solution transforms double-sided copper-clad PI (PI) carrier tape substrates through substrate selection, stamping, pretreatment, dry film pressing, exposure, development, etching, laser punching, cleaning, electroplating, and slitting, ultimately producing single-sided and double-sided carrier tapes with a lift force greater than 80N. This simplifies the production process for double-sided carrier tapes made from copper-clad laminates and improves production efficiency. Specifically, double-sided copper-clad PI material is superior to thermosetting materials made from epoxy resin fiberglass cloth; the selection of double-sided copper-clad PI as the carrier tape substrate, as PI material is a thermoplastic and recyclable material, is conducive to the sustainable development of resources. Punching is performed on the double-sided copper-clad PI material to obtain edge perforations for easy subsequent processing and positioning; surface contamination is removed by water washing, and then the oxide layer is removed by micro-etching with dilute sulfuric acid to ensure the quality of subsequent processes; a dry film is applied to the contact surface and the bonding surface of the carrier substrate using a laminator to prepare for subsequent patterning; the film pattern is transferred to the dry film by ultraviolet irradiation under a vacuum environment; a sodium carbonate solution is used to dissolve the unexposed part of the dry film to retain the required pattern; an acidic copper chloride solution is used to dissolve the copper layer exposed after development to form a circuit pattern; a laser device is used to remove the PI material in the center of the copper ring to expose the copper layer for subsequent connection; the carrier substrate is cleaned to remove the copper oxide layer to ensure a clean surface; the contact surface is gold-plated and the bonding surface is soft gold-plated to enhance the corrosion resistance of the pattern on the front and the solderability of the bonding surface; a slitting device is used to cut the carrier substrate into single-sided and double-sided carriers with a width of 35 cm. The IC card carrier prepared by this method can ensure that the top column force is greater than 80N, preferably up to 100N.

[0018] In addition, the method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to the present invention may also have the following additional technical features:

[0019] According to one embodiment of the present invention, in step S2, the stamping speed on the carrier substrate is 235-260 SPM, and the stamping pressure is 4-6 Kg / cm 2 .

[0020] This technical solution precisely controls the stamping process by setting a specific stamping speed and stamping air pressure on the carrier substrate.

[0021] According to one embodiment of the present invention, in step S3, the speed of cleaning the carrier substrate is 5-7 m / min, and the concentration range of the dilute sulfuric acid is 25±15 ml / L.

[0022] This technical solution ensures the cleaning effect of the carrier substrate by setting the cleaning speed and the concentration range of dilute sulfuric acid.

[0023] According to one embodiment of the present invention, in step S4, the carrier substrate is pressed into a dry film at a temperature of 95-120° C., a pressure range of 0.1-0.5 MPa, and a speed of 4-10 m / min.

[0024] This technical solution optimizes the dry film pressing process by setting the film pressing temperature, pressure and speed, as well as selecting the film pressing machine.

[0025] According to one embodiment of the present invention, in step S4, a laminator is used to laminate the upper and lower surfaces of the carrier tape substrate.

[0026] According to one embodiment of the present invention, in step S5, the upper and lower surfaces are exposed simultaneously by an exposure machine, wherein: the front side of a single-sided product is exposed to produce a contact surface pattern; the back side does not need to be exposed; the front side of a double-sided product is exposed to produce a contact surface pattern; the back side is exposed to produce an annular welding hole on the pressure welding surface; the exposure energy is 41 grids of the exposure scale, the energy of the upper exposure light is 15~25 grids; the lower exposure light is turned off, and the exposure speed is 1~3m / min.

[0027] According to one embodiment of the present invention, in step S6, the concentration of the sodium carbonate solution is 5-15 g / L, the developing temperature is 25-35° C., and the developing speed is 4-6 m / min.

[0028] This technical solution accurately controls the development process by setting the concentration of the sodium carbonate solution, the development temperature and the development speed.

[0029] According to one embodiment of the present invention, in step S7, the specific gravity of the acidic copper chloride solution is 1.1-1.4 g / cm 3 , the etching temperature range is 50~60℃, and the etching speed range is 4~6m / min.

[0030] This technical solution optimizes the etching process by setting the specific gravity, etching temperature and etching speed of the acidic copper chloride solution.

[0031] According to one embodiment of the present invention, in step S8, the laser speed of the laser device is 5-20 m / min, and the power is 5-30 W.

[0032] This technical solution controls the laser punching process by setting the laser speed and power of the laser equipment.

[0033] According to one embodiment of the present invention, in step S10, the plating solution for the gold plating treatment is a neutral gold plating solution, which is heated to 40-50°C, uses a current density of 0.1-0.3ASD, and the electroplating time is 3-8S; the plating solution for the soft gold electroplating is a neutral gold plating solution, the carrier substrate is connected to a DC power supply as a cathode, the platinum titanium mesh is used as an anode, is heated to 60-70°C, uses a current density of 2-6ASD, and the electroplating time is 8-15S.

[0034] This technical solution ensures the quality and effect of the electroplating process by setting the plating solution type, temperature, current density and electroplating time for gold plating and soft gold electroplating.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] (1) The carrier substrate uses recyclable double-sided copper-clad PI material to replace the non-recyclable epoxy resin glass fiber cloth, which is beneficial to environmental protection and can achieve sustainable utilization of resources;

[0037] (2) Double-sided copper-clad PI material is used to make carrier products. Since the copper will be etched away on the welding surface and the PI surface is rough, the problem of the top column force of a single piece of PI material not meeting the standard can be solved;

[0038] (3) It can simplify the process of double-sided products, improve production efficiency and save energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a flow diagram of the method of the present invention;

[0040] Figure 2 It is a comparison chart of the pillar force test of the method of the present invention. DETAILED DESCRIPTION

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0042] like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps:

[0043] S1. Substrate selection: Double-sided copper-clad PI material is selected as the carrier tape substrate;

[0044] S2. Stamping: Stamping the carrier tape substrate to form edge perforations on the double-sided copper-clad PI material;

[0045] S3. Pretreatment: Clean the carrier substrate by washing with water to remove surface contamination, and then micro-etch with dilute sulfuric acid to remove the surface oxide layer;

[0046] S4, dry film pressing: Press the dry film on the carrier substrate, and use a laminator to apply the dry film to the contact surface and welding surface of the carrier substrate;

[0047] S5. Exposure: Expose the dry film by vacuuming and irradiating it with ultraviolet light to transfer the pattern on the film to the dry film.

[0048] S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film;

[0049] S7, etching: etching the developed carrier substrate, using an acidic copper chloride solution to dissolve and corrode the copper exposed after development;

[0050] S8, laser punching: laser punching is performed on the etched carrier substrate, and the PI material in the center of the copper ring is removed by laser equipment to expose the copper layer of the carrier substrate;

[0051] S9, cleaning: cleaning the carrier substrate to remove the copper oxide layer;

[0052] S10, electroplating: performing gold plating on the contact surface of the carrier substrate and soft gold electroplating on the bonding surface;

[0053] S11. Cutting: Cut the carrier tape substrate by a cutting device to obtain single-sided and double-sided carrier tapes with a width of 35 cm.

[0054] Example 1

[0055] like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps:

[0056] S1. Substrate selection: Use double-sided copper-clad PI material;

[0057] S2. Stamping: Use stamping equipment to stamp the double-sided copper-clad PI material to punch out the edge holes; the stamping speed is 235SPM, and the stamping pressure is 4Kg / cm2 :

[0058] S3. Pre-treatment: Use cleaning equipment to clean the double-sided PI material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L:

[0059] S4. Dry film pressing: Dry film is pressed on both the upper and lower surfaces of the material; the upper and lower dry films are applied to the contact surface and welding surface of the carrier product using a laminator. The lamination temperature is 95°C, the pressure is 0.1MPa, and the lamination speed is 4m / min.

[0060] S5. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The upper and lower sides of the material are exposed simultaneously. The front side is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding hole on the pressure welding surface. The exposure energy is measured using a 41-grid exposure scale, and the upper exposure light energy is 15 grids. The lower exposure light is turned off and the exposure speed is 1m / min.

[0061] S6. Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min:

[0062] S7, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride. The specific gravity of the acidic copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min:

[0063] S8, Laser Punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 5m / min and the power is 5W.

[0064] S9, cleaning: Use cleaning equipment to clean the product to remove the copper oxide layer at a cleaning speed of 5m / min;

[0065] S10, Electroplating: Gold-plating the contact surface of the product. Use Deli neutral gold plating solution or other finished electroplating solution. Heat the plating solution to 40°C and use a current density of 0.1ASD for electroplating for 3 seconds. Soft gold electroplating is performed on the bonding surface. Use Deli neutral gold plating solution or other finished electroplating solution. Connect the product to the cathode of a DC power supply and use a platinum titanium mesh as the anode to electroplate the bonding surface of the product. Heat the plating solution to 60°C and use a current density of 2ASD for electroplating for 8 seconds.

[0066] S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0067] Example 2

[0068] like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps:

[0069] S1. Substrate selection: Use double-sided copper-clad PI material;

[0070] S2. Stamping: Use stamping equipment to stamp the double-sided PI material to punch out the edge holes; the stamping speed is 260SPM, and the stamping pressure is 6Kg / cm 2 :

[0071] S3. Pre-treatment: Use cleaning equipment to clean the double-sided PI material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 7m / min, and the concentration of dilute sulfuric acid is 40ml / L:

[0072] S4. Press dry film: Press dry film on both the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The lamination temperature is 120°C, the pressure is 0.5MPa, and the lamination speed is 10m / min.

[0073] S5. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The upper and lower sides of the material are exposed simultaneously. The front side is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding hole on the pressure welding surface. The exposure energy is measured using a 41-grid exposure ruler, and the upper exposure light energy is 25 grids. The lower exposure light is turned off and the exposure speed is 3m / min.

[0074] S6. Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 15g / L, the development temperature is 35℃, and the development speed is 6m / min:

[0075] S7, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride; the specific gravity of the acidic copper chloride solution is 1.4g / cm 3 , etching temperature is 60℃, etching speed is 6m / min:

[0076] S8, Laser Punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 20min / m and the power is 30W.

[0077] S9, cleaning: Use cleaning equipment to clean the product to remove the copper oxide layer at a cleaning speed of 7m / min;

[0078] S10, Electroplating: Gold-plating the contact surface of the product. Use Deli neutral gold plating solution or other finished electroplating solution. Heat to 50°C and use 0.3ASD current density for electroplating for 8 seconds. Soft gold electroplating is performed on the bonding surface. Use Deli neutral gold plating solution or other finished electroplating solution. Connect the product to the cathode of the DC power supply and use the platinum titanium mesh as the anode to electroplate the bonding surface of the product. Heat to 70°C and use 6ASD current density for electroplating for 15 seconds.

[0079] S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0080] Example 3

[0081] like Figure 1 As shown, this embodiment provides a method for preparing a single-sided and double-sided carrier tape using a double-sided copper-clad PI material, comprising the following steps:

[0082] S1. Substrate selection: Use double-sided copper-clad PI material;

[0083] S2. Stamping: Use stamping equipment to stamp the double-sided copper-clad PI material to punch out the edge holes; the stamping speed is 245SPM, and the stamping pressure is 5Kg / cm 2 :

[0084] S3. Pre-treatment: Use cleaning equipment to clean the double-sided PI material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 6m / min, and the concentration of dilute sulfuric acid is 25ml / L:

[0085] S4. Dry film pressing: Dry film is pressed on both the upper and lower surfaces of the material; the upper and lower dry films are applied to the contact surface and welding surface of the carrier product using a laminator. The lamination temperature is 110°C, the pressure is 0.3MPa, and the lamination speed is 7m / min.

[0086] S5. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The upper and lower sides of the material are exposed simultaneously. The front side is exposed to produce the contact surface pattern. The back side is exposed to produce the annular welding holes and the pattern on the welding surface. The exposure energy is measured using a 41-grid exposure scale, and the upper exposure light energy is 20 grids. The lower exposure light is turned off and the exposure speed is 2m / min.

[0087] S6. Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 10g / L, the development temperature is 30℃, and the development speed is 5m / min:

[0088] S7, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride. The specific gravity of the acidic copper chloride solution is 1.2g / cm 3 , etching temperature is 55℃, etching speed is 5m / min:

[0089] S8, Laser Punching: Use laser equipment to punch blind holes on the product's welded surface, remove the PI in the center of the copper ring, and expose the copper layer. The laser speed is 10min / m and the power is 20W.

[0090] S9, cleaning: Use cleaning equipment to clean the product to remove the copper oxide layer at a cleaning speed of 6m / min;

[0091] S10, Electroplating: Gold-plating the contact surface of the product. Use Deli neutral gold plating solution or other finished electroplating solution. Heat the plating solution to 45°C and use a current density of 0.2ASD for 6 seconds. Soft gold electroplating is performed on the bonding surface. Use Deli neutral gold plating solution or other finished electroplating solution. Connect the product to the cathode of a DC power supply and use a platinum titanium mesh as the anode to electroplate the bonding surface of the product. Heat the plating solution to 65°C and use a current density of 4ASD for 12 seconds.

[0092] S11. Cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0093] Comparative Example 1

[0094] This comparative example 1 provides a method for preparing a single-sided carrier tape from a PI material with adhesive, comprising the following steps:

[0095] S1. Substrate selection: Use traditional PI material with adhesive;

[0096] S2. Stamping: Use stamping equipment to stamp the PI material with glue to punch out the tooth holes, welding holes, and positioning holes; the stamping speed is 235SPM, and the stamping pressure is 4Kg / cm 2 :

[0097] S3. Copper lamination: Use a copper lamination machine to laminate 35μm copper foil onto the surface of a single-sided substrate. The copper lamination roller temperature is 120°C, the copper lamination pressure is 0.4MPa, and the speed is 6m / min.

[0098] S4. Pre-treatment: Use cleaning equipment to clean the glass fiber cloth material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L:

[0099] S5. Press dry film: Press dry film on both the upper and lower surfaces of the material; use a laminator to apply the upper and lower dry films to the contact surface and welding surface of the carrier product. The lamination temperature is 95°C, the pressure is 0.1MPa, and the lamination speed is 4m / min.

[0100] S6. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The upper and lower sides of the material are exposed simultaneously, with the front side exposed to produce the contact surface pattern. The back side does not need to be exposed. The exposure energy is measured using a 41-grid exposure scale, and the upper exposure light energy is 15 grids. The lower exposure light is turned off, and the exposure speed is 1m / min:

[0101] S7, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min:

[0102] S8, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride; the specific gravity of the acidic copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min:

[0103] S9. Electroplating: Gold-plating the contact surface of the product. Use Deli neutral gold plating solution or other finished electroplating solution. Heat the plating solution to 50°C and use a current density of 0.3ASD for electroplating for 8 seconds. Soft gold electroplating is performed on the bonding surface. Use Deli neutral gold plating solution or other finished electroplating solution. Connect the product to the cathode of a DC power supply and use a platinum titanium mesh as the anode to electroplate the bonding surface of the product. Heat the plating solution to 70°C and use a current density of 6ASD for electroplating for 15 seconds.

[0104] S10, cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0105] Comparative Example 2

[0106] This comparative example 2 provides a method for preparing a double-sided smart card carrier tape using a copper-clad laminate (PI) material with adhesive, comprising the following steps:

[0107] S1. Substrate selection: Production process of single-sided smart card carrier tape using adhesive-coated copper clad laminate (PI) material;

[0108] S2. Stamping: Use stamping equipment to stamp the copper clad laminate material to punch out the tooth holes, welding holes, and positioning holes; the stamping speed is 235SPM, and the stamping pressure is 4Kg / cm 2 :

[0109] S3. Pre-treatment: Use cleaning equipment to clean the copper clad laminate material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer. The cleaning speed is 5m / min and the concentration of dilute sulfuric acid is 10ml / L.

[0110] S4, dry film pressing: dry film pressing is performed on the material; the upper dry film is applied to the contact surface of the carrier product using a laminating machine, with a laminating temperature of 95°C, a pressure of 0.1 MPa, and a laminating speed of 4 m / min.

[0111] S5. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The material is exposed to produce a contact surface pattern. The exposure energy is measured using a 41-grid exposure scale, with the upper exposure light energy at 15 grids. The lower exposure light is turned off, and the exposure speed is 1m / min.

[0112] S6. Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min:

[0113] S7, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride; the specific gravity of the acidic copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min:

[0114] S8. Copper lamination: Use a copper lamination machine to laminate 35μm copper foil onto the surface of a single-sided substrate. The copper lamination roller temperature is 120°C, the copper lamination pressure is 0.4MPa, and the speed is 6m / min.

[0115] S9. Pre-treatment: Use cleaning equipment to clean the glass fiber cloth material. First, wash with water to remove surface contamination, and then use dilute sulfuric acid to perform micro-etching to remove the surface oxide layer; the cleaning speed is 5m / min, and the concentration of dilute sulfuric acid is 10ml / L:

[0116] S10, dry film pressing: dry film pressing is performed on the upper and lower surfaces of the material; the upper and lower dry films are applied to the contact surface and welding surface of the carrier product using a laminator. The lamination temperature is 95°C, the pressure is 0.1MPa, and the lamination speed is 4m / min.

[0117] S11. Exposure: After the film and material are precisely aligned in the exposure machine, the pattern on the film is projected onto the material through vacuum suction and ultraviolet irradiation. The upper and lower sides of the material are exposed simultaneously, with the front side exposed to produce the contact surface pattern. The back side does not need to be exposed. The exposure energy is measured using a 41-grid exposure scale, and the upper exposure light energy is 15 grids. The lower exposure light is turned off, and the exposure speed is 1m / min:

[0118] S12, Development: Use the weak alkalinity of sodium carbonate aqueous solution to dissolve the dry film in the area not irradiated by ultraviolet light, and retain the dry film in the area irradiated by ultraviolet light. The concentration of sodium carbonate solution is 5g / L, the development temperature is 25℃, and the development speed is 4m / min:

[0119] S13, etching: The copper exposed after development is dissolved and corroded with acidic copper chloride; the specific gravity of the acidic copper chloride solution is 1.1g / cm 3 , etching temperature is 50℃, etching speed is 4m / min:

[0120] S14. Electroplating: Gold-plating the contact surface of the product. Use Deli neutral gold plating solution or other finished electroplating solution. Heat the plating solution to 50°C and use a current density of 0.3ASD for electroplating for 8 seconds. Soft gold electroplating is performed on the bonding surface. Use Deli neutral gold plating solution or other finished electroplating solution. Connect the product to the cathode of a DC power supply and use a platinum titanium mesh as the anode to electroplate the bonding surface of the product. Heat the plating solution to 70°C and use a current density of 6ASD for electroplating for 15 seconds.

[0121] S15, cutting: Use cutting equipment to cut the product into finished products with a width of 35 cm.

[0122] Combine Figure 2 The comparison chart of the ejection force test shows that Examples 1-3 achieve ejection forces of 95.8N, 100.6N, and 97.4N, respectively, meeting the standard and averaging 100N. In contrast, Comparative Examples 1-2 achieve only 25.2N and 28N, respectively, with an average ejection force below 28N, far below the standard. This demonstrates that the present invention achieves superior ejection force performance due to copper etching away from the bonding surface, leaving copper filaments on the PI surface, resulting in a roughened PI surface.

[0123] Besides the difference in ejector force, Comparative Example 2 shows that the production of double-sided IC card carrier tape in Comparative Example 2 requires two repetitions of the pre-treatment - dry film pressing - exposure - development - etching production process, resulting in low production efficiency. The present invention uses double-sided copper-clad PI material, requiring only a single production process, resulting in higher production efficiency. Furthermore, existing IC card carrier tape production uses epoxy resin fiberglass cloth, a thermosetting material that cannot be recycled and reused. Long-term use places a significant burden on the environment, making it an environmentally unfriendly material. PI, on the other hand, is a thermoplastic material that can be recycled and is environmentally friendly.

[0124] Although the present invention has been described in detail with reference to the accompanying drawings and in conjunction with preferred embodiments, the present invention is not limited thereto. Without departing from the spirit and essence of the present invention, a person of ordinary skill in the art may make various equivalent modifications or substitutions to the embodiments of the present invention, and such modifications or substitutions shall be within the scope of the present invention. Any person skilled in the art who can easily conceive of changes or substitutions within the technical scope disclosed in the present invention shall be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope of protection of the claims.

Claims

1. A method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials, characterized in that: The steps include: S1. Substrate selection: Double-sided copper-clad PI material is selected as the carrier tape substrate; S2. Stamping: Stamping the carrier tape substrate to form edge perforations on the double-sided copper-clad PI material; S3. Pretreatment: Clean the carrier substrate by first washing with water to remove surface contamination, and then micro-etching with dilute sulfuric acid to remove the surface oxide layer; the cleaning speed of the carrier substrate is 5-7m / min, and the concentration range of dilute sulfuric acid is 25±15ml / L; S4, dry film pressing: Press the dry film on the carrier substrate, and use a laminator to apply the dry film to the contact surface and welding surface of the carrier substrate; press the dry film on the carrier substrate at a temperature of 95-120°C, a pressure range of 0.1-0.5 MPa, and a lamination speed of 4-10 m / min; S5. Exposure: Expose the dry film by vacuuming and irradiating it with ultraviolet light to transfer the pattern on the film to the dry film. S6, development: dissolve the dry film that has not been irradiated with ultraviolet light with a sodium carbonate solution, and retain the developed dry film; S7, etching: etching the developed carrier substrate, using an acidic copper chloride solution to dissolve and corrode the copper exposed after development; the concentration of the sodium carbonate solution is 5-15 g / L, the development temperature is 25-35°C, and the development speed is 4-6 m / min; S8, Laser Punching: Laser punch the etched carrier substrate, use laser equipment to remove the PI material in the center of the copper ring, and expose the copper layer of the carrier substrate; the specific gravity of the acidic copper chloride solution is 1.1~1.4g / cm 3 , the etching temperature range is 50~60℃, and the etching speed range is 4~6m / min; S9, cleaning: Clean the carrier substrate to remove the copper oxide layer at a cleaning speed of 5-7 m / min; S10, electroplating: performing gold plating on the contact surface of the carrier substrate and soft gold electroplating on the bonding surface; S11. Cutting: Use cutting equipment to cut the carrier tape substrate into single-sided and double-sided carrier tapes with a width of 35 cm, ensuring that the top column force is greater than 80N.

2. The method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to claim 1, characterized in that: In step S2, the stamping speed on the carrier substrate is 235-260 SPM, and the stamping pressure is 4-6 Kg / cm 2 .

3. The method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to claim 1, characterized in that: In step S4, a laminator is used to laminate the upper and lower surfaces of the carrier tape substrate.

4. The method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to claim 3, characterized in that: In step S5, the upper and lower surfaces are exposed simultaneously by the exposure machine, wherein: the front side of the single-sided carrier is exposed to produce the contact surface pattern; the back side does not need to be exposed; the front side of the double-sided carrier is exposed to produce the contact surface pattern; the back side is exposed to produce the annular welding hole on the pressure welding surface; the exposure energy is 41 grid exposure scale, the energy of the upper exposure light is 15-25 grids; the lower exposure light is turned off, and the exposure speed is 1-3 m / min.

5. The method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to claim 1, wherein: In step S8, the laser speed of the laser device is 5-20 m / min, and the power is 5-30 W.

6. The method for preparing single-sided and double-sided carrier tapes using double-sided copper-clad PI materials according to claim 1, wherein: In the step S10, the plating solution for the gold plating treatment is a neutral gold plating solution, which is heated to 40-50°C, uses a current density of 0.1-0.3ASD, and the electroplating time is 3-8S; the plating solution for the soft gold electroplating is a neutral gold plating solution, the carrier substrate is connected to a DC power supply as the cathode, the platinum titanium mesh is used as the anode, is heated to 60-70°C, uses a current density of 2-6ASD, and the electroplating time is 8-15S.

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