Power semiconductor module with electrical conductor and method for producing same
By designing the contact area between the substrate with a conductor and the conductor track in the power semiconductor module, and forming a formed metal body through the combination of materials, the problem of insufficient current carrying capacity of the conductor track of the existing module is solved, the production process is simplified and the production process is improved Current conduction capability.
Patent Information
- Application Number
- CN202410797254.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-06-22
- Filing Date
- 2024-06-20
- Publication Date
- 2024-12-24
AI Technical Summary
The current carrying capacity of existing power semiconductor modules in conductor tracks is insufficient, and the production process is complex, making it difficult to simplify.
A power semiconductor module is designed, which includes a substrate having an electrically insulating substrate and a conductor track, and is electrically connected to the contact area of the conductor track through a conductive body. The conductor has a conductive part and a retaining part, and the retaining part is connected to the forming body. The receptacle, such as welding, sintering or bonding, forms a formed metal body to improve conductivity.
The current carrying capacity of the substrate conductor track is improved, the production process of the power semiconductor module is simplified, and the current conduction capability of the module is enhanced.
Smart Images
Figure CN119181688A_ABST
Abstract
Description
Technical Field
[0001] The invention describes a power semiconductor module having a first substrate and an electrically insulating shaped body arranged adjacent to the first substrate.
[0002] The first substrate has an electrically insulating base body and a first conductor track and a plurality of further conductor tracks arranged at a distance from one another on the electrically insulating base body, wherein an electrical conductor is arranged on one conductor track and is connected to a first contact of the first conductor track in an electrically conductive manner via a first contact region. The invention also describes a method for producing such a power semiconductor module. Background Art
[0003] DE 10 2005 030 247 A1 discloses a power semiconductor module, which has a housing, terminal elements leading to the outside, an electrically insulating substrate arranged inside the housing, and the electrically insulating substrate is composed of an insulating material body and a plurality of metal connection paths electrically insulated from each other on its first main area facing away from the substrate. On these metal connection paths, there are power semiconductor components, and there are connecting elements between the power semiconductor components or between the power semiconductor components and the conductor tracks. These connecting elements are formed as at least one shaped metal body, wherein the at least one shaped metal body is arranged above the power semiconductor component and is suspended above it on at least one side. The shaped metal body has a first support point with the power semiconductor component, wherein the total area of these support points is less than half of the coverage area of the power semiconductor component. The second support point forms a connection with the conductor track.
[0004] DE 10 2014 102 018 B3 discloses a power semiconductor module with internal load and auxiliary connection means, wherein the auxiliary connection means is formed as a wire bonding connection. The substrate has a plurality of load and auxiliary potential regions, wherein a circuit breaker formed as a plurality of controllable power range switches arranged in series is arranged on a first load potential region. The power range switch has a load bonding connection consisting of a plurality of load bonding wires, which has a second load potential region, wherein a first bonding foot is arranged on the second load potential region, and an adjacent second bonding foot of the corresponding load bonding wire is arranged on a contact region of the power range switch. A uniform and low-inductance configuration is obtained by the following a), b) and c), wherein a) a control bonding line electrically connecting two designated auxiliary potential regions to each other and a parallel bonding line electrically connected to only one of the load potential regions are arranged in parallel with the control bonding line; b) the corresponding first bonding pins of most (preferably all) of the designated load bonding lines of the power section switches not arranged in the middle of the series arrangement are arranged to be offset from the straight line of the designated bonding line perpendicular to the edge of the corresponding power section switch toward the middle of the power section switches arranged in series; c) the second load potential region has a current flow direction, and the lengths of those bonding line portions of the load bonding lines increase in the current flow direction from the first bonding pin of one power section switch to the next second bonding pin of the next power section switch adjacent to the power section switch.
[0005] With this in mind, the invention is based on the object of providing a power semiconductor module having a substrate and an electrical conductor, which increases the current-carrying capacity of the conductor tracks of the substrate and simplifies the production process of the power semiconductor module.
[0006] According to the invention, this object is achieved by a power semiconductor module, which has a first substrate and an electrically insulating shaped body arranged adjacent to the first substrate, preferably adjacent in the laterally direction, wherein the first substrate has an electrically insulating base body and a first conductor track and a plurality of further conductor tracks arranged on the electrically insulating base body spaced apart from one another, wherein an electrical conductor is arranged on the first conductor track and is connected in an electrically conductive manner to a first contact portion of the first conductor track via a first contact area, and wherein the electrical conductor has a conducting portion and a retaining portion, which are preferably formed integrally, and wherein a retaining device of the retaining portion is connected to a receptacle of the shaped body.
[0007] The electrical conductor is designed and intended to conduct an electric current through the electrical conducting portion and in operation of the power semiconductor module, preferably from the first contact region to the further contact region.
[0008] It can be particularly advantageous if the second substrate has an electrically insulating base body and a second conductor track and a plurality of further conductor tracks arranged at a distance from one another on the electrically insulating base body, wherein the second contact region of the electrical conductor is connected in an electrically conductive manner to the second contact portion of the second conductor track, and wherein the second substrate is arranged alongside the shaped body next to the first substrate.
[0009] It is particularly preferred that the electrical conductor is formed as a shaped metal body, preferably as a shaped metal body made of copper.
[0010] In principle, it is preferred that the first contact region of the electrical conductor and, if present, the second contact region of the electrical conductor are connected in an electrically conductive manner to the assigned conductor track by material bonding, preferably by welding, sintering or soldering.
[0011] It is also preferred that the retaining part is connected to the receptacle by material bonding, in particular by an adhesive connection, or by a force fit, preferably by a snap connection, or by a form fit, preferably by a preferably heat-induced crimping connection, or during the production of the shaped body by an injection molding process.
[0012] In principle, it is advantageous if the conducting portion of the electrical conductor rather than the holding portion of the electrical conductor is intended to contribute to conducting the current within the power semiconductor module during operation.
[0013] It can be advantageous if the electrical conductor (preferably its conductive portion) has an arc. It is advantageous here if the retaining portion projects laterally away in the region of the arc. It is also advantageous if the arc is arranged between the first conductor track and the second conductor track (if a second conductor track is present).
[0014] It is also preferred that the shaped body is formed as a plastic shaped body.
[0015] It may also be preferred that the shaped body is formed like a frame around the first substrate or, if two substrates are present, around both substrates.
[0016] Furthermore, the shaped body can be formed as part of a housing of a power semiconductor module.
[0017] The object of the present invention is also achieved by a method for manufacturing the power semiconductor module as described above, the method comprising the following steps, the order of the steps being abcd or bacd:
[0018] a) arranging a first substrate laterally adjacent to the electrically insulating shaped body, wherein the first substrate comprises an electrically insulating base body and a first conductor track and a plurality of further conductor tracks arranged spaced apart from one another on the electrically insulating base body;
[0019] b) arranging an electrical conductor with a retaining portion, wherein a retaining device of the retaining portion is connected to a receptacle of the shaped body;
[0020] c) arranging a first contact region of the electrical conductor on a first contact portion of the first conductor track;
[0021] d) Connecting the first contact to the first contact area.
[0022] It can be advantageous here if, in method step a), a second substrate is arranged next to the first substrate and also laterally adjacent to the electrically insulating molded body, wherein the second substrate has an electrically insulating base body and a second conductor track and a plurality of further conductor tracks arranged at a distance from one another on the electrically insulating base body.
[0023] In this case, it can also be advantageous to connect the holding part to the receptacle by material bonding, in particular by an adhesive connection, or by a force fit, preferably by a snap connection, or by a form fit, preferably by a preferably heat-induced crimp connection.
[0024] It can also be advantageous if, in method step c), the second contact region of the electrical conductor is located on the second contact of the second conductor track. It can be preferred if, in method step d), the second contact is connected to the second contact region.
[0025] It may be preferred that the connection of the contact to the contact region (if present and specified) is produced by friction welding, laser welding, sintering or soldering.
[0026] Of course, unless explicitly excluded or excluded per se, or conflicting with the concept of the present invention, features or feature groups mentioned in the singular, such as electrical conductors, may also be present in the power semiconductor module according to the present invention in the plural form.
[0027] It goes without saying that the various configurations of the present invention (regardless of whether these configurations are mentioned in conjunction with a power semiconductor module or in conjunction with a method) can be implemented individually or in any combination in order to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the specified combination, but also in other combinations or alone without departing from the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Further explanations, advantageous details and features of the invention are given in Figures 1 to 5 This will become apparent from the following description of exemplary embodiments of the invention or corresponding parts thereof which are schematically represented in the accompanying drawings.
[0029] Figure 1A detail of a first configuration of a power semiconductor module according to the invention is schematically shown in plan view.
[0030] Figure 2 A detail of a second configuration of a power semiconductor module according to the invention is schematically shown in plan view.
[0031] Figure 3 The electrical conductors of a second configuration of a power semiconductor module according to the invention are schematically shown in plan view.
[0032] Figure 4 The electrical conductors of a power semiconductor module according to the invention are shown in a three-dimensional view.
[0033] Figure 5 The power semiconductor module according to the invention is shown in a three-dimensional view. DETAILED DESCRIPTION
[0034] Figure 1 A detail of a first configuration of a power semiconductor module 1 according to the invention is shown in plan view. For this power semiconductor module 1, only a substrate 2 and an electrically insulating shaped body 3 are shown, wherein this in particular forms a part of the housing of the power semiconductor module 1. The shaped body 3 is here arranged laterally adjacent to the longitudinal sides of the substrate 2. In this configuration, the shaped body 3 (at least a part of it) is arranged at a distance from the substrate 2. The shaped body 3 itself is formed from plastic, which is a common practice for housings of power semiconductor modules 1. In principle, the shaped body 3 can also be formed from other materials, in particular ceramic electrically insulating materials.
[0035] The first substrate 2 has an electrically insulating base body 20 and a first conductor track 22 as well as a plurality of further conductor tracks 24 arranged spaced apart from one another on the electrically insulating base body 20. The base body 20 can be formed here from ceramic and the conductor tracks 22, 24 from copper.
[0036] On the first conductor track 22, the electrical conductor 4 is arranged in an electrically conductive manner via a first contact region 420 and is connected to a first contact 220 of the first conductor track 22. The electrical conductor 4 is also electrically conductively connected to a similar further contact of the first conductor track 22 via a further contact region. The connection of the above-mentioned two contact regions 420 of the electrical conductor 4 to the designated contact 220 of the first conductor track 22 is here realized by a welded connection, more precisely a laser welded connection, via material bonding.
[0037] The electrical conductor 4 thus forms in this configuration a parallel current path between the two contacts 220 of the first conductor track 22. This is useful in particular if the cross section of the conductor track 22 in this section is small compared to the cross section desired for current conduction.
[0038] The electrical conductor 4 itself has a conducting portion 42 on which, in operation, current is carried between the two contacts 220. The electrical conductor 4 also has a retaining portion 40 which is not designed and is not intended to carry current during operation of the power semiconductor module 1. The retaining portion 40 has a retaining device 400, by means of which the electrical conductor 4 is connected to the receptacle 300 of the shaped body 3, whereby the entire electrical conductor 4 is fixed in its position relative to the substrate 2. The connection of the retaining device 400 to the shaped body 3 is formed here as a form-fitting connection. For this purpose, the shaped body 3 has a receptacle 300 which is assigned to the retaining device 400, which is formed here as a recess and into which the retaining device 400 is inserted and then fixed in the receptacle 300 by a heat-induced crimping connection of a portion of the recess.
[0039] Figure 2 A detail of a second configuration of a power semiconductor module 1 according to the invention is shown in plan view. The second configuration differs from the first configuration in that a second substrate 6 is arranged adjacent to the short sides of the first substrate 2 and at the same time laterally adjacent to the shaped body 3 .
[0040] Similarly, the second substrate 6 has an electrically insulating base body 60 and a second conductor track 62 and a plurality of further conductor tracks 64 arranged spaced apart from one another on the electrically insulating base body 60. The electrical conductor 4 of this configuration has a first contact area 420 and a second contact area 422, wherein the first contact area 420 is directly connected in an electrically conductive manner to the first contact portion 220 of the first conductor track 22 of the first substrate 2, and the second contact area 422 is directly connected in an electrically conductive manner to the second contact portion 622 of the second conductor track 62 of the second substrate 6. Direct connection is understood here to mean any material bonding connection, such as an adhesive, soldering, welding or sintering connection.
[0041] In operation of the power semiconductor module 1 , the conducting portion 42 of the electrical conductor 4 is intended and designed for carrying electric current from the first conductor track 22 to the second conductor track 62 and thus for connecting the two substrates 2 , 6 in an electrically conductive manner.
[0042] The arrangement of the conductor 4 is otherwise similar to that of Figure 1 The described configuration is identical, including its components and the connection to the shaped body 3 .
[0043] Figure 3The electrical conductor 4 of the second configuration of the power semiconductor module 1 according to the invention is schematically shown in plan view. Here, in particular, the traces of the laser welding connections 520, 522 are shown on those areas of the electrical conductor 4 which are opposite the first contact area 420 and the second contact area 422. By means of these welding connections 520, 522, an electrically conductive connection with the associated contacts 220, 622 of the first conductor track 22 and the second conductor track 62 is formed.
[0044] Figure 4 The electrical conductor 4 of the power semiconductor module 1 according to the invention is shown in a three-dimensional view. The electrical conductor 4 is formed as a shaped metal body produced by a punching and bending technique. The material of the electrical conductor 4 is copper.
[0045] The conductor 4 has a conductive portion 42, in which two arc-shaped portions 442 and 426 are formed. Figure 3 Compared with the conductor 4 of the power semiconductor module 1, it has two holding portions 40, each holding portion having a holding device 400. Here, the two holding devices 400 each protrude away from the two arc-shaped portions 424, 426 in the lateral direction and are therefore perpendicular to the current flow direction of the conductive portion 42. Therefore, it is obvious that the two holding portions 40, in particular the two holding devices 400, are not used for current conduction in the operation of the power semiconductor module 1.
[0046] Figure 5 A power semiconductor module 1 according to the invention is shown in a three-dimensional view. The power semiconductor module 1 has a shaped body 3, which here forms a frame-like housing part. In this housing part, DC voltage terminal elements 10, 12 and AC voltage terminal elements 14 are suitably arranged in an electrically conductive manner within the circuit and connected to the two substrates 2, 6. In addition, auxiliary terminal elements 16 are arranged in this housing part and are likewise suitably connected in an electrically conductive manner within the circuit to the substrates 2, 6. The first conductor tracks 22 of the first substrate 2 are connected by means of a first conductor track 22 connected to the first substrate 2. Figure 4 The conductor 4 described is connected to the Figure 2 A second conductor track 62 of a second substrate 6 is depicted.
[0047] The two arc-shaped portions 424 and 426 of the conductive portion 42 of the conductor 4 (compare Figure 4 ) is arranged above the gap between the two substrates 2 , 6 and is therefore arranged between the first conductor track 22 and the second conductor track 62 .
Claims
1. A power semiconductor module (1) comprising a first substrate (2) and an electrically insulating molded body (3), wherein the electrically insulating molded body (3) is arranged adjacent to the first substrate (2), preferably adjacent to the first substrate in a lateral direction, wherein: The first substrate (2) has an electrically insulating base (20), and a first conductor track (22) and a plurality of further conductor tracks (24) arranged at a distance from one another on the electrically insulating base body (20), wherein an electrical conductor (4) is arranged on the first conductor track (22) and is connected in an electrically conductive manner to a first contact (220) of the first conductor track (22) via a first contact region (420), And wherein, the conductor (4) has a conductive part (42) and a retaining part (40), the conductive part (42) and the retaining part (40) are preferably formed integrally, and the retaining device (400) of the retaining part (40) is connected to the receptacle (300) of the forming body (3).
2. The power semiconductor module according to claim 1, wherein: A second substrate (6) having an electrically insulating base (60), and a second conductor track (62), and A plurality of further conductor tracks (64) are arranged at a distance from one another on the electrically insulating base body (60), wherein the second contact region (422) of the electrical conductor (4) is connected in an electrically conductive manner to the second contact portion (622) of the second conductor track (6), and wherein the second substrate (6) is arranged alongside the shaped body (3) next to the first substrate (2).
3. The power semiconductor module according to claim 1 , wherein: The electrical conductor (4) is formed as a shaped metal body, preferably as a shaped metal body made of copper.
4. The power semiconductor module according to claim 1, wherein: The first contact region (420) of the electrical conductor (4) and, if present, also the second contact region (422) of the electrical conductor (4) are connected to the designated conductor track by material bonding, preferably by welding, sintering or soldering.
5. The power semiconductor module according to claim 1, wherein: The retaining portion (400) is connected to the receptacle (300) by material bonding, in particular by an adhesive connection, or by a force fit, preferably by a snap connection, or by a form fit, preferably by a preferably heat-induced crimping connection, or during the production of the shaped body (3) by an injection molding process.
6. The power semiconductor module according to claim 1, wherein: The conducting portion (42) of the electrical conductor (4), rather than the retaining portion (40) of the electrical conductor (4), is intended to facilitate conducting current within the power semiconductor module (1) during operation.
7. The power semiconductor module according to claim 2, wherein: The conductor (4), preferably the conductive portion (42) thereof, has arc-shaped portions (424, 426).
8. The power semiconductor module according to claim 7, wherein: The retaining portion (40) protrudes away in the laterally direction in the region of the arcuate portions (424, 426).
9. The power semiconductor module according to claim 8, wherein: The arcuate portion (424, 426) is arranged between the first conductor track (22) and the second conductor track (62).
10. The power semiconductor module according to one of claims 1 to 2, wherein: The shaped body (3) is formed as a plastic shaped body.
11. The power semiconductor module according to one of claims 1 to 2, wherein: The shaped body (3) is formed like a frame around the first substrate (2) or, if two substrates (2, 6) are present, around both substrates (2, 6).
12. The power semiconductor module according to one of claims 1 to 2, wherein: The shaped body (3) forms a part of a housing of the power semiconductor module (1).
13. A method for producing a power semiconductor module (1) according to one of claims 1 to 12, the method comprising the following steps, the order of the steps being abcd or bacd: a) Arranging the first substrate (2) laterally adjacent to the electrically insulating shaped body (3), wherein: The first substrate (2) has an electrically insulating base body (20) and a first conductor track (22) and a plurality of further conductor tracks (24) arranged at a distance from one another on the electrically insulating base body (20); b) arranging an electrical conductor (4) with a holding portion (40), wherein a holding device (400) of the holding portion (40) is connected to a receptacle (300) of the shaped body (3); c) arranging a first contact region (420) of the electrical conductor (4) on a first contact portion (220) of the first conductor track (22); d) Connecting the first contact portion (220) to the first contact region (420).
14. The method according to claim 13, wherein: In method step a), a second substrate (6) is arranged next to the first substrate (2) and also laterally adjacent to the electrically insulating shaped body (3), The second substrate (6) has an electrically insulating base body (60) and a second conductor track (62) as well as a plurality of further conductor tracks (64) arranged spaced apart from one another on the electrically insulating base body (60).
15. The method according to claim 14, wherein: The retaining device (40) is connected to the receptacle (300) by material bonding, in particular by an adhesive connection, or by a force fit, preferably by a snap-fit connection, or by a form fit, preferably by a preferably heat-induced crimp connection.
16. The method according to claim 14 or 15, wherein: In method step c), a second contact region (422) of the electrical conductor (4) is seated on a second contact (622) of the second conductor track (62).
17. The method according to claim 16, wherein: In method step d), the second contact (622) is connected to the second contact region (422).
18. The method according to claim 13 or 14, wherein: The connection between the corresponding contact portion (220, 622) and the designated contact area (420, 422) is formed by friction welding, laser welding (520, 522), sintering or soldering.