Display device

Abstract

Comprises: a display panel (50a) having a display region (D) including a first display region (Rn), a second display region (Rt) adjacent to the first display region (Rn), and a third display region (Rc) within the second display region (Rt); and an electronic component (60) that is provided on one surface side of the display panel (50a) and overlaps the third display region (Rc), the second display region (Rt) being provided along an edge of the display panel (50a), and the electronic component (60) being provided on the other surface side of the display panel (50a). The density of sub-pixels that can be lighted up in the second display region (Rt) other than the third display region (Rc) is lower than the density of sub-pixels that can be lighted up in the first display region (Rn) and higher than the density of sub-pixels that can be lighted up in the third display region (Rc).

Description

Technical Field

[0001] The present invention relates to a display device. Background Art

[0002] In recent years, as a display device to replace liquid crystal display devices, self-luminous organic EL display devices using organic electroluminescence (hereinafter referred to as "EL") elements have attracted much attention. In this organic EL display device, a structure is proposed in which a camera area is provided with an imaging element such as a camera in a display area where a plurality of sub-pixels are arranged.

[0003] For example, Patent Document 1 discloses a display device in which scanning signal lines and data signal lines extending toward a display region are routed so as to bypass a light transmission region for imaging in the display region. Prior art literature Patent Literature

[0004] Patent Document 1: International Publication No. 2019 / 198163 ( Figure 4 ) Summary of the invention Problem that the invention aims to solve

[0005] However, in an organic EL display device in which electronic components such as imaging elements are arranged in the display area, sub-pixels are thinned out in order to utilize light transmitted through the display panel in the electronic components. Therefore, the boundary between the area where the sub-pixels are thinned out and the area where the sub-pixels are not thinned out is easy to visually identify.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to make the boundary between a region where sub-pixels are thinned out and a region where sub-pixels are not thinned out difficult to visually recognize. Solutions to the problem

[0007] In order to achieve the above-mentioned purpose, the display device involved in the present invention includes: a display panel, which has a display area in which a plurality of sub-pixels are arranged, the display area includes a first display area, a second display area arranged adjacent to the first display area, and a third display area arranged within the second display area; and an electronic component, which is arranged on a surface side of the display panel in a manner overlapping with the third display area, the second display area is arranged along an end edge of the display panel, and the density of the sub-pixels that can be lit in the second display area outside the third display area is lower than the density of the sub-pixels that can be lit in the first display area, and is higher than the density of the sub-pixels that can be lit in the third display area. Effects of the Invention

[0008] According to the present invention, it is possible to make the boundary between the region where sub-pixels are thinned out and the region where sub-pixels are not thinned out difficult to be visually recognized. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a plan view schematically showing the structure of an organic EL display device according to the first embodiment of the present invention. Figure 2 Yes Figure 1 A top view of the main part after enlarging area A in FIG. Figure 3 It is a plan view of a normal pixel region in a display region of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 4 It is along Figure 2 A cross-sectional view of a normal pixel area in the display area of ​​an organic EL display panel taken along line IV-IV. Figure 5 It is along Figure 2 A cross-sectional view of a sparse pixel area in the display area of ​​an organic EL display panel taken along line VV in FIG. Figure 6 FIG. 1 is an equivalent circuit diagram of a thin film transistor layer of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 7 It is a cross-sectional view of an organic EL layer of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Figure 8 It is a plan view of a modified example of the organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention. Fig. 9 It is a plan view of an organic EL display panel constituting the organic EL display device according to the second embodiment of the present invention. Fig.10 Yes Fig. 9 The main part of area C in the figure is enlarged and viewed from above. Fig.11 It is a plan view of an organic EL display device according to a third embodiment of the present invention. Fig.12 It is a plan view of an organic EL display panel constituting an organic EL display device according to a fourth embodiment of the present invention. Fig.13 It is along Fig.12 A cross-sectional view of a sparse pixel area of ​​an organic EL display panel taken along line XIII-XIII. DETAILED DESCRIPTION

[0010] Hereinafter, embodiments of the present invention will be described in detail based on the drawings. In addition, the present invention is not limited to the following embodiments.

[0011] 《First Implementation Mode》 Figures 1 to 8 The first embodiment of the display device according to the present invention is shown. In addition, as a display device having a light-emitting element layer, an organic EL display device having an organic EL element is exemplified in each of the following embodiments. Figure 1 : is a plan view showing a schematic structure of an organic EL display device 70a according to this embodiment. Figure 2 Yes Figure 1 The main part of the enlarged area A in the figure constitutes the top view. Figure 3 70a is a top view of a normal pixel region Rn in a display region D of an organic EL display panel 50a constituting an organic EL display device 70a. Figure 4 It is along Figure 2 A cross-sectional view of a normal pixel region Rn in a display region D of an organic EL display panel 50a taken along line IV-IV in FIG. Figure 5 It is along Figure 2 A cross-sectional view of a sparse pixel region Rt in a display region D of an organic EL display panel 50a taken along line VV in FIG. Figure 6 3 is an equivalent circuit diagram of the thin film transistor layer 30a constituting the organic EL display panel 50a. Figure 7 3 is a cross-sectional view of the organic EL layer 33 constituting the organic EL display panel 50a. Figure 8 1 is a plan view of an organic EL display panel 50 b which is a modified example of the organic EL display panel 50 a .

[0012] like Figure 1 As shown, the organic EL display device 70a includes an organic EL display panel 50a and an imaging element 60 as an electronic component provided on one surface side (resin substrate 10 side described later) of the organic EL display panel 50a so as to overlap with an imaging region Rc described later.

[0013] like Figure 1 As shown, the organic EL display panel 50a includes, for example, a display area D which is arranged in a rectangular shape and displays an image, and a frame area F which is arranged around the display area D and is arranged in a rectangular frame shape. Figure 1 As shown, a rectangular display area D with arc-shaped corners is illustrated, but the rectangular shape includes, in addition to a roughly rectangular shape with arc-shaped corners, a rectangle with right angles, a roughly rectangular shape with arc-shaped sides, a roughly rectangular shape with a portion of the side having a cutout, etc.

[0014] like Figure 3As shown in FIG. 1 , in the display area D, a plurality of sub-pixels P are arranged in a matrix. Figure 3 As shown, in the display area D, for example, a sub-pixel P having a red light emitting area Lr for displaying red, a sub-pixel P having a green light emitting area Lg for displaying green, and a sub-pixel P having a blue light emitting area Lb for displaying blue are arranged adjacent to each other. In addition, in the display area D, one pixel is composed of three adjacent sub-pixels P having, for example, a red light emitting area Lr, a green light emitting area Lg, and a blue light emitting area Lb. Here, since the imaging area Rc is provided in the display area D, the sub-pixels P are sparsely arranged in order to improve the light transmittance in the imaging area Rc. Therefore, as shown in FIG. Figure 1 As shown, the display area D includes: a normal pixel area Rn set as a first display area in which sub-pixels P are not thinned; a sparse pixel area Rt set as a second pixel area along an end edge of one side of the organic EL display panel 50a in a manner adjacent to the normal pixel area Rn, in which sub-pixels P are thinned; and a camera area Rc set as a third display area in the sparse pixel area Rt.

[0015] In the normal pixel area Rn, as Figure 2 As shown in FIG. 1 , a plurality of sub-pixels Pa that can be lit are arranged in a matrix in a mutually adjacent manner. Figure 2 As shown in FIG. 1 , sub-pixels Pb that cannot be lit (parts without hatching in the figure) are arranged around sub-pixels Pa that can be lit (parts with hatching in the figure). Here, the density of sub-pixels Pa that can be lit in the sparse pixel region Rt outside the imaging region Rc (e.g., 100 / mm2) is 2 The density of the sub-pixels Pa that can be lit in the normal pixel area Rn (e.g., 500 / mm 2 and is lower than the density of sub-pixels Pa that can be lit in the imaging region Rc (e.g., 50 pixels / mm 2 In addition, Figure 2 As shown in FIG. 1 , the boundary between the sub-pixel Pa that can be lit in the normal pixel region Rn and the sub-pixel Pb that cannot be lit in the sparse pixel region Rt is irregularly shaped in a concave-convex shape when viewed from above. In addition, the width Wb ( Figure 2 The vertical length in ( ) is the width Wa of the sparse pixel region Rt ( Figure 2 The longitudinal length (e.g., about 5 mm) is about 10% of the longitudinal length (e.g., about 0.5 mm). Figure 2 The amount of 5 sub-pixels P arranged vertically.

[0016] In the border area F Figure 1 At the lower end portion in the figure, the terminal portion T is arranged to extend in one direction (lateral direction in the figure). Figure 1 As shown, in the frame area F, between the display area D and the terminal portion T, a bending portion B is provided extending in one direction (lateral direction in the figure) and capable of being bent 180° (U-shaped) with the lateral direction in the figure as a bending axis.

[0017] like Figure 4 As shown in FIG. 1 , the organic EL display panel 50a includes: a resin substrate 10 provided as a base substrate; a thin film transistor (hereinafter referred to as "TFT") layer 30a provided on the resin substrate 10; an organic EL element layer 40 provided as a light-emitting element layer on the TFT layer 30a; and a sealing film 45 provided on the organic EL element layer 40. In addition, in the present embodiment, although the organic EL display panel 50a is exemplified as being rectangular in plan view, it may also be Figure 8 Specifically, in the organic EL display panel 50b, as shown in FIG. Figure 8 As shown in FIG. 5 , the upper edge in the figure is set to be curved in a plan view, and the sparse pixel region Rt constituting the display region D is set along the curved edge. In addition, in the organic EL display panel 50b, in the frame region F (not shown), as shown in FIG. Figure 8 As shown, a peripheral circuit portion M is provided on the outer sides of the left and right sides of the display region D in the figure, and a terminal portion T is provided on the outer side of the lower side of the display region D in the figure. Here, in the peripheral circuit portion M, for example, a peripheral circuit such as a gate drive circuit is formed monolithically, and in the terminal portion T, for example, an FPC (flexible printed circuit) carrying an IC (integrated circuit) constituting a source drive circuit is installed.

[0018] The resin substrate 10 is made of an organic resin material such as polyimide resin.

[0019] like Figure 4 As shown, the TFT layer 30a includes: a primer film 11 provided on a resin substrate 10; a first TFT 9a and a second TFT 9b (see FIG. 1 ) provided on the primer film 11 for each sub-pixel Pa that can be lit. Figure 6), third TFT9c and capacitor 9d; and a first planarization film 19, a protective insulating film 20 and a second planarization film 22 stacked in sequence on the first TFT9a, the second TFT9b and the third TFT9c. In addition, in the TFT layer 30a, in the sub-pixel Pb that cannot be lit in the sparse pixel region Rt, the first TFT9a, the second TFT9b, the third TFT9c and the capacitor 9d are not provided on the primer film 11 (refer to Figure 5 ).

[0020] In display area D, as Figure 3 as well as Figure 6 As shown in FIG. 1 , a plurality of gate lines 14 are provided in the TFT layer 30a so as to extend parallel to each other in the lateral direction in the drawing. Figure 3 as well as Figure 6 As shown in FIG. 1 , a plurality of light emission control lines 14e are provided in the TFT layer 30a so as to extend parallel to each other in the lateral direction in the drawing. In addition, the gate lines 14a and the light emission control lines 14e are formed in the same layer with the same material as the gate electrodes 14a and 14b and the lower conductive layer 14c described later. Figure 3 As shown in FIG. 1 , each light emitting control line 14e is arranged adjacent to each gate line 14d. Figure 3 as well as Figure 6 As shown in FIG. 1 , a plurality of source lines 18f are provided in the TFT layer 30a so as to extend parallel to each other in the longitudinal direction of the drawing. The source lines 18f are formed in the same layer and made of the same material as the source electrodes 18a and 18c and the drain electrodes 18b and 18d described later. In addition, in the TFT layer 30a, in the display region D, the power supply lines 21a are provided in a lattice shape. Figure 2 In the top view of FIG. 1 , the light-emitting control line 14e is omitted. Figure 4 and Figure 5 In the cross-sectional view, the source line 18f is omitted.

[0021] The primer film 11 , the gate insulating film 13 , the first interlayer insulating film 15 , the second interlayer insulating film 17 , and the protective insulating film 20 are composed of a single layer film or a stacked film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

[0022] like Figure 6 As shown, the first TFT 9a is electrically connected to the corresponding gate line 14d, source line 18f, and second TFT 9b in each sub-pixel Pa that can be lit. Figure 4As shown, the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, and a source electrode 18a and a drain electrode 18b, which are sequentially arranged on the primer film 11. Figure 4 As shown, the semiconductor layer 12a is provided on the base coat film 11 and has a channel region, a source region, and a drain region. In addition, the semiconductor layer 12a and the semiconductor layer 12b described later are formed of polycrystalline silicon such as LTPS (low temperature polysilicon), In-Ga-Zn-O-based oxide semiconductor, etc. In addition, as Figure 4 As shown in FIG. 1 , the gate insulating film 13 is provided in a manner covering the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the gate electrode 14a is provided on the gate insulating film 13 in a manner overlapping with the channel region of the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14a. Figure 4 As shown in FIG. 1 , the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 in a manner separated from each other. Figure 4 As shown, the source electrode 18 a and the drain electrode 18 b are connected to the source region and the drain region of the semiconductor layer 12 a via contact holes formed in the stacked film of the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 , respectively.

[0023] like Figure 6 As shown, the second TFT 9b is electrically connected to the corresponding first TFT 9a, the power supply line 21a, and the third TFT 9c in each lightable sub-pixel Pa. The second TFT 9b has substantially the same structure as the first TFT 9a and the third TFT 9c described later.

[0024] like Figure 6 As shown, the third TFT 9c is electrically connected to the corresponding second TFT 9b, the power supply line 21a and the light emission control line 14e in each sub-pixel Pa that can be lit. Figure 4 As shown, the third TFT 9c includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, and a source electrode 18c and a drain electrode 18d, which are sequentially arranged on the primer film 11. Figure 4 As shown in FIG. 1 , the semiconductor layer 12b is provided on the primer film 11 and has a channel region, a source region, and a drain region similarly to the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the gate insulating film 13 is provided in a manner covering the semiconductor layer 12 b. Figure 4As shown in FIG. 1 , the gate electrode 14 b is provided on the gate insulating film 13 in a manner overlapping with the channel region of the semiconductor layer 12 b. Figure 4 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14 b. Figure 4 As shown in FIG. 1 , the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 in a manner separated from each other. Figure 4 As shown, the source electrode 18c and the drain electrode 18d are connected to the source region and the drain region of the semiconductor layer 12b respectively via contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17. Figure 4 As shown, the drain electrode 18 d is electrically connected to the relay electrode 21 b via a contact hole Ha formed in the first planarization film 19 and the protective insulating film 20 .

[0025] In addition, in the present embodiment, the first TFT 9a, the second TFT 9b, and the third TFT 9c of the top gate type are exemplified, but the first TFT 9a, the second TFT 9b, and the third TFT 9c may be bottom gate TFTs.

[0026] like Figure 6 As shown in FIG. 1 , the capacitor 9d is electrically connected to the corresponding first TFT 9a and the power supply line 21a in each sub-pixel Pa that can be lit. Figure 4 As shown in FIG. 1 , the capacitor 9d includes a lower conductive layer 14c provided on the gate insulating film 13, a first interlayer insulating film 15 provided so as to cover the lower conductive layer 14c, and an upper conductive layer 16a provided so as to overlap with the lower conductive layer 14c on the first interlayer insulating film 15. Here, the upper conductive layer 16a is electrically connected to the power supply line 21a via a contact hole (not shown) formed in the second interlayer insulating film 17, the first planarizing film 19, and the protective insulating film 20.

[0027] The first planarizing film 19 , the second planarizing film 22 , and an edge cover 32 described later are made of an organic resin material such as polyimide resin, acrylic resin, or novolac resin.

[0028] like Figure 4 As shown, the relay electrode 21 b is provided on the protective insulating film 20 and is formed of the same material and in the same layer as the power supply line 21 a.

[0029] like Figure 4 As shown, the organic EL element layer 40 includes a plurality of first electrodes 31, an edge cover 32, a plurality of organic EL layers 33, and a second electrode 34 which are sequentially stacked on the TFT layer 30a. Figure 4As shown, the organic EL element 35 is composed of a first electrode 31 , an organic EL layer 33 , and a second electrode 34 which are sequentially stacked on the second planarizing film 22 .

[0030] like Figure 4 As shown in FIG. 1 , a plurality of first electrodes 31 are arranged in a matrix on the second planarization film 22 in a manner corresponding to a plurality of sub-pixels Pa that can be lit. Figure 4 As shown, the first electrode 31 is electrically connected to the drain electrode 18d of each third TFT 9c via a contact hole Ha and a contact hole Hb, wherein the contact hole Ha is formed in the first planarizing film 19 and the protective insulating film 20, and the contact hole Hb is formed in the second planarizing film 22. In addition, in the sub-pixel Pb that cannot be lit in the sparse pixel region Rt, the first electrode 31 and the organic EL layer 33 are not provided on the second planarizing film 22 (refer to Figure 5 ). In addition, the first electrode 31 has the function of injecting holes (positive holes) into the organic EL layer 33. In addition, in order to improve the hole injection efficiency into the organic EL layer 33, the first electrode 31 is more preferably formed of a material with a large work function. Here, as the material forming the first electrode 31, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), tin (Sn) and other metal materials can be cited. In addition, the material constituting the first electrode 31 can also be an alloy such as astatine (At) / astatine oxide (AtO2). Furthermore, the material constituting the first electrode 31 can also be a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. In addition, the first electrode 31 may be formed by stacking a plurality of layers made of the above-mentioned materials, for example. In addition, examples of compound materials having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

[0031] like Figure 4 As shown, the edge cover 32 is provided in a lattice pattern so as to cover the peripheral end portions of each first electrode 31 so as to be shared by a plurality of sub-pixels P (including sub-pixels Pa that can be lit and sub-pixels Pb that cannot be lit).

[0032] like Figure 4 As shown, a plurality of organic EL layers 33 are arranged on a plurality of first electrodes 31 and are arranged in a matrix as light-emitting functional layers in a manner corresponding to a plurality of sub-pixels Pa that can be lit. Figure 7 As shown, each organic EL layer 33 includes a hole injection layer 1 , a hole transport layer 2 , a light emitting layer 3 , an electron transport layer 4 and an electron injection layer 5 which are sequentially arranged on the first electrode 31 .

[0033] The hole injection layer 1 is also called an anode buffer layer, and it makes the energy levels of the first electrode 31 and the organic EL layer 33 close to each other, and has the function of improving the efficiency of hole injection from the first electrode 31 to the organic EL layer 33. Here, the material constituting the hole injection layer 1 includes, for example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyaryl alkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, and the like.

[0034] The hole transport layer 2 has a function of improving the efficiency of hole transport from the first electrode 31 to the organic EL layer 33. Here, as a material constituting the hole transport layer 2, for example, porphyrin derivatives, aromatic tertiary amine compounds, phenylethylamine derivatives, polyvinylcarbazole, poly-p-phenylethyne, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, aromatic amine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide, etc. can be cited.

[0035] The light-emitting layer 3 is a region into which holes and electrons are injected from the first electrode 31 and the second electrode 34, respectively, and holes and electrons are recombined when voltage is applied to the first electrode 31 and the second electrode 34. Here, the light-emitting layer 3 is formed of a material with high light-emitting efficiency. In addition, as a material constituting the light-emitting layer 3, for example, metal hydroxyquinoline compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, distyrene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, distyrylbenzene derivatives, tristyrylbenzene derivatives, perylene derivatives, pyrenone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, acridine derivatives, phenoxazinone, quinacridone derivatives, rubrene, poly(p-phenylene vinylene), polysilane, etc. can be cited.

[0036] The electron transport layer 4 has a function of efficiently transferring electrons to the light-emitting layer 3. Here, the material constituting the electron transport layer 4 includes, for example, oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, metal hydroxyquinoline compounds, and the like, which are organic compounds.

[0037] The electron injection layer 5 is close to the energy level of the second electrode 34 and the organic EL layer 33, and has a function of improving the efficiency of injecting electrons from the second electrode 34 to the organic EL layer 33. Through this function, the driving voltage of the organic EL element 35 can be reduced. Here, as a material constituting the electron injection layer 5, for example, inorganic base compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), as well as aluminum oxide (Al2O3), strontium oxide (SrO), etc. can be cited.

[0038] like Figure 4 As shown, the second electrode 34 is provided in a manner covering each organic EL layer 33 and the edge cover 32 so as to be shared by a plurality of sub-pixels P (including sub-pixels Pa that can be lit and sub-pixels Pb that cannot be lit). In addition, the second electrode 34 has a function of injecting electrons into each organic EL layer 33. In addition, in order to improve the efficiency of electron injection into the organic EL layer 33, the second electrode 34 is more preferably composed of a material with a small work function. Here, as a material constituting the second electrode 34, for example, silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), lithium fluoride (LiF), etc. can be cited. In addition, the second electrode 34 may be formed of alloys such as magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). In addition, the second electrode 34 may be formed of conductive oxides such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). In addition, the second electrode 34 may be formed by stacking a plurality of layers composed of the above materials. In addition, as materials with a small work function, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc.

[0039] like Figure 4 and Figure 5As shown, the sealing film 45 includes a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43 that are arranged in this order on the second electrode 34 so as to cover the second electrode 34, and the sealing film 45 has a function of protecting the organic EL layers 33 of the organic EL element 35 from the influence of moisture and oxygen. Here, the first inorganic sealing film 41 and the second inorganic sealing film 43 are made of inorganic insulating films such as a silicon nitride film, a silicon oxide film, and a silicon oxynitride film, for example. In addition, the organic sealing film 42 is made of an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, and a polyamide resin, for example.

[0040] The imaging element 60 is composed of, for example, a CMOS (complementary metal oxide semiconductor) camera, a CCD (charge coupled device) camera, or the like. In addition, in the present embodiment, the imaging element 60 is illustrated as an electronic component, but the electronic component may also be a light sensor such as a fingerprint sensor or a face authentication sensor, for example.

[0041] In the above-described organic EL display device 70a, in each sub-pixel Pa that can be lit, by inputting a gate signal to the first TFT 9a via the gate line 14d, the first TFT 9a becomes conductive, and a predetermined voltage corresponding to the source signal is written to the gate electrode 14b and the capacitor 9d of the second TFT 9b via the source line 18f. When a light emission control signal is input to the third TFT 9c via the light emission control line 14e, the third TFT 9c becomes conductive, and a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 21a to the organic EL element 35. Thus, the light emitting layer 3 of the organic EL element 35 emits light, and image display is performed. In addition, in the organic EL display device 70, even when the first TFT 9a becomes non-conductive, since the gate voltage of the second TFT 9b is held by the capacitor 9d, the light emission of the light emitting layer 3 is maintained by each pixel Pa that can be lit until the gate signal of the next frame is input. In addition, the organic EL display device 70a is configured to photograph the front side of the organic EL display panel 50a through the organic EL display panel 50a by the imaging element 60 provided on the back side of the organic EL display panel 50a.

[0042] Next, a method for manufacturing the organic EL display device 70a of the present embodiment will be described. Here, the method for manufacturing the organic EL display device 70a of the present embodiment includes a TFT layer forming step, an organic EL element layer forming step, and a sealing film forming step.

[0043] <TFT layer forming step> First, for example, a non-photosensitive polyimide resin (having a thickness of about 6 μm) is applied on a glass substrate, and the applied film is pre-baked and post-baked to form the resin substrate 10 .

[0044] Next, a silicon oxide film (about 500 nm thick) and a silicon nitride film (about 100 nm thick) are sequentially formed on the substrate surface on which the resin substrate 10 is formed, for example, by plasma CVD (chemical vapor deposition) to form the primer film 11 .

[0045] Then, using the plasma CVD method, an amorphous silicon film (with a thickness of about 30nm to 100nm) is formed on the surface of the substrate with the primer film 11 formed thereon. After the amorphous silicon film is crystallized by laser annealing or the like to form a semiconductor film of a polycrystalline silicon film, the semiconductor film is patterned to form semiconductor layers 12a and 12b, etc.

[0046] Furthermore, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed on the substrate surface having the semiconductor layer 12 a and the like formed thereon by, for example, plasma CVD method, to form a gate insulating film 13 covering the semiconductor layer 12 a and the like.

[0047] Next, a molybdenum film (about 100 nm to 400 nm thick) is deposited on the substrate surface with the gate insulating film 13 formed thereon by, for example, sputtering, and then the molybdenum film is patterned to form gate electrodes 14 a and 14 b and the like.

[0048] Then, impurity ions are doped using the gate electrodes 14 a and 14 b as masks, thereby partially converting the semiconductor layers 12 a and 12 b into conductors.

[0049] Furthermore, a silicon nitride film (about 50 nm to 200 nm in thickness) is formed on the substrate surface where a portion of the semiconductor layer 12 a and the like is made conductive, for example, by plasma CVD, thereby forming the first interlayer insulating film 15 .

[0050] Next, a molybdenum film (having a thickness of about 100 nm to 400 nm) is deposited on the substrate surface having the first interlayer insulating film 15 by, for example, sputtering, and then the molybdenum film is patterned to form the upper conductive layer 16 a and the like.

[0051] Then, a silicon oxide film (thickness of about 100nm to 500nm) and a silicon nitride film (thickness of about 100nm to 300nm) are sequentially formed on the substrate surface where the upper conductive layer 16a and the like are formed, for example, by plasma CVD method, thereby forming the second interlayer insulating film 17.

[0052] Furthermore, the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 are patterned appropriately to form contact holes.

[0053] Next, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm) and a titanium film (thickness of about 50 nm) are sequentially formed on the surface of the substrate having the contact holes formed therein, for example by sputtering, and then these metal stacked films are patterned to form source electrodes 18a and 18c, drain electrodes 18b and 18d, etc.

[0054] Then, a photosensitive polyimide resin (about 2.5 μm thick) is coated on the surface of the substrate where the source electrode 18 a is formed, for example, by spin coating or slit coating, and the coated film is pre-baked, exposed, developed and post-baked to form a first planarizing film 19 .

[0055] Furthermore, a silicon nitride film (thickness of about 100 nm to 500 nm) is sequentially formed on the substrate surface having the first planarization film 19 by, for example, plasma CVD, and then patterned to form a protective insulating film 20 having an upper portion of the contact hole Ha.

[0056] Then, by etching the first planarizing film 19 exposed from the contact hole Ha of the protective insulating film 20 , a lower portion of the contact hole Ha is formed in the first planarizing film 19 .

[0057] Then, on the entire substrate surface with the contact hole Ha formed thereon, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm) and a titanium film (thickness of about 50 nm) are sequentially formed, for example, by sputtering, and then these metal stacked films are patterned to form a power line 21a and a relay electrode 21b, etc.

[0058] Finally, after a photosensitive polyimide resin (thickness of about 2.5 μm) is coated on the surface of the substrate where the power line 21a is formed, for example by spin coating or slit coating, the coated film is pre-baked, exposed, developed and post-baked to form a second planarizing film 22 having a contact hole Hb.

[0059] As described above, the TFT layer 30 a can be formed.

[0060] <Organic EL Element Layer Formation Step> By using a known method, a first electrode 31, an edge cover 32, an organic EL layer 33 (hole injection layer 1, hole transport layer 2, light-emitting layer 3, electron transport layer 4, electron injection layer 5), and a second electrode 34 are formed on the second planarization film 22 of the TFT layer 30a formed in the above-mentioned TFT layer formation process to form an organic EL element layer 40.

[0061] <Sealing Film Forming Step> First, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by plasma CVD using a mask on the surface of the substrate on which the organic EL element layer 40 is formed in the above-mentioned organic EL element layer forming step, thereby forming a first inorganic sealing film 41.

[0062] Next, on the substrate surface on which the first inorganic sealing film 41 is formed, an organic resin material such as acrylic resin is formed into a film by, for example, an inkjet method, to form an organic sealing film 42 .

[0063] Thereafter, the second inorganic sealing film 43 is formed by forming an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film using a mask by plasma CVD, thereby forming the sealing film 45 .

[0064] As described above, the organic EL display panel 50 a of this embodiment can be manufactured.

[0065] Furthermore, when the organic EL display panel 50a manufactured as described above is fixed inside a casing, for example, an imaging element 60 is provided on the back side of the imaging region Rc of the organic EL display panel 50a, thereby manufacturing an organic EL display device 70a.

[0066] As described above, according to the organic EL display device 70a of the present embodiment, the sparse pixel region Rt including the imaging region Rc is provided along one side of the organic EL display panel 50a, and the density of the sub-pixels Pa that can be lit in the sparse pixel region Rt outside the imaging region Rc is lower than the density of the sub-pixels Pa that can be lit in the normal pixel region Rn, and is higher than the density of the sub-pixels Pa that can be lit in the imaging region Rc. Therefore, the sparse pixel region Rt outside the imaging region Rc is arranged between the imaging region Rc where the sub-pixels Pa that can be lit are arranged at a relatively low density and the normal pixel region Rn where the sub-pixels Pa that can be lit are arranged at a relatively high density, and in the sparse pixel region Rt, the sub-pixels Pa that can be lit are arranged at a relatively medium density. Thus, the sparse pixel region Rt outside the imaging region Rc becomes a buffer region that mitigates the change in the density of the sub-pixels Pa that can be lit, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely arranged and the normal pixel region Rn where the sub-pixels are not sparsely arranged can be made difficult to visually recognize.

[0067] In addition, according to the organic EL display device 70a of the present embodiment, the boundary between the sub-pixels Pa that can be lit in the normal pixel region Rn and the sub-pixels Pb that cannot be lit in the sparse pixel region Rt is concave-convex in a plan view, so that the boundary can be made unclear. As a result, the boundary between the normal pixel region Rn and the sparse pixel region Rt can be made difficult to be visually recognized, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely distributed and the normal pixel region Rn where the sub-pixels are not sparsely distributed can be made more difficult to be visually recognized.

[0068] Second Implementation Method Fig. 9 and Fig.10 A second embodiment of the display device according to the present invention is shown. Fig. 9 : is a top view of an organic EL display panel 50c constituting the organic EL display device of this embodiment. Fig.10 Yes Fig. 9 The main part of the enlarged area C in FIG. 1 constitutes a top view. Figures 1 to 8 The same parts are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0069] In the first embodiment, an organic EL display device 70a is illustrated in which a sparse pixel region Rt is provided along one side of an organic EL display panel 50a, but in the present embodiment, an organic EL display device is illustrated in which a sparse pixel region Rt is provided along a corner of an organic EL display panel 50c. In addition, in the organic EL display device of the present embodiment, only an organic EL display panel 50c is used to replace an organic EL display panel 50b which is a modified example of the organic EL display panel 50a in the first embodiment, and the other structures are substantially the same as those of the organic EL display device 70a, and therefore, the description will be centered on the organic EL display panel 50c.

[0070] Similar to the organic EL display panel 50a of the first embodiment, the organic EL display panel 50c includes a display area D and a frame area F provided around the display area D. Here, in the organic EL display panel 50c, as shown in FIG. Fig. 9 As shown in FIG. 1 , the sparse pixel region Rt constituting the display region D is provided along the corners of both ends of one side on the upper side in the figure. Fig.10 As shown, an imaging region Rc is provided in each sparse pixel region Rt. In addition, similarly to the organic EL display panel 50a of the first embodiment, in the organic EL display panel 50c, the density of sub-pixels Pa that can be lit in the sparse pixel region Rt other than the imaging region Rc is lower than the density of sub-pixels Pa that can be lit in the normal pixel region Rn and higher than the density of sub-pixels Pa that can be lit in the imaging region Rc. Fig.10 As shown, the boundary between the sub-pixels Pa that can be lit in the normal pixel region Rn and the sub-pixels Pb that cannot be lit in the sparse pixel region Rt has an irregular topography and a concave-convex shape when viewed from above.

[0071] The organic EL display panel 50 c , like the organic EL display panel 50 a of the first embodiment, includes a resin substrate 10 , a TFT layer 30 a provided on the resin substrate 10 , an organic EL element layer 40 provided on the TFT layer 30 a , and a sealing film 45 provided on the organic EL element layer 40 .

[0072] The organic EL display device having the organic EL display panel 50c is configured similarly to the organic EL display device 70a of the first embodiment described above: in each sub-pixel Pa that can be lit, the light-emitting layer 3 of the organic EL element 35 is appropriately illuminated by the first TFT 9a, the second TFT 9b, and the third TFT 9c to display an image. In addition, the organic EL display device having the organic EL display panel 50c is configured such that the front side of the organic EL display panel 50c is photographed through the organic EL display panel 50c by the imaging element 60 provided on the back side of the organic EL display panel 50c.

[0073] By making the arrangement of the sub-pixels Pa that can be lit and the sub-pixels Pb that cannot be lit different in the manufacturing method of the organic EL display device 70a of the first embodiment, the organic EL display device including the organic EL display panel 50c of this embodiment can be manufactured.

[0074] As described above, according to the organic EL display device having the organic EL display panel 50c of the present embodiment, the sparse pixel region Rt including the imaging region Rc is provided along the corner of the organic EL display panel 50c, and the density of the sub-pixels Pa that can be lit in the sparse pixel region Rt outside the imaging region Rc is lower than the density of the sub-pixels Pa that can be lit in the normal pixel region Rn, and is higher than the density of the sub-pixels Pa that can be lit in the imaging region Rc. Therefore, the sparse pixel region Rt outside the imaging region Rc is arranged between the imaging region Rc where the sub-pixels Pa that can be lit are arranged at a relatively low density and the normal pixel region Rn where the sub-pixels Pa that can be lit are arranged at a relatively high density, and in the sparse pixel region Rt, the sub-pixels Pa that can be lit are arranged at a relatively medium density. Thus, the sparse pixel area Rt outside the imaging area Rc becomes a buffer area that mitigates changes in the density of sub-pixels Pa that can be lit, thereby making the boundary between the imaging area Rc where sub-pixels are sparse and the normal pixel area Rn where sub-pixels are not sparse difficult to visually identify.

[0075] In addition, according to the organic EL display device having the organic EL display panel 50c of the present embodiment, the boundary between the sub-pixels Pa that can be lit in the normal pixel region Rn and the sub-pixels Pb that cannot be lit in the sparse pixel region Rt is concave-convex in a plan view, so that the boundary can be made unclear. As a result, the boundary between the normal pixel region Rn and the sparse pixel region Rt can be made difficult to be visually recognized, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely distributed and the normal pixel region Rn where the sub-pixels are not sparsely distributed can be made more difficult to be visually recognized.

[0076] 《Third Implementation Mode》 Fig.11 A third embodiment of the display device according to the present invention is shown. Fig.11 1 is a plan view showing an organic EL display device 70d according to the present embodiment.

[0077] In the above-mentioned first embodiment, an organic EL display device 70a is illustrated in which one imaging area Rc is set in the sparse pixel area Rt of the organic EL display panel 50a, but in this embodiment, an organic EL display device 70d is illustrated in which two imaging areas Rc are set in the sparse pixel area Rt of the organic EL display panel 50d.

[0078] like Fig.11 As shown, the organic EL display device 70d includes an organic EL display panel 50d and two imaging elements 60 which are provided on one surface side of the organic EL display panel 50d so as to overlap with the imaging regions Rc of the sparse pixel region Rt.

[0079] Similar to the organic EL display panel 50a of the first embodiment, the organic EL display panel 50d includes a display region D and a frame region F provided around the display region D. Here, in the organic EL display panel 50d, as shown in FIG. Fig.11 As shown in FIG. 1 , the display region D includes: a normal pixel region Rn; a sparse pixel region Rt provided along the edge of one side (the upper side in the figure) of the organic EL display panel 50d in a manner adjacent to the normal pixel region Rn; and two imaging regions Rc provided in the sparse pixel region Rt. In addition, similarly to the organic EL display panel 50a of the first embodiment described above, in the organic EL display panel 50d, the density of the sub-pixels Pa that can be lit in the sparse pixel region Rt other than the imaging region Rc is lower than the density of the sub-pixels Pa that can be lit in the normal pixel region Rn and higher than the density of the sub-pixels Pa that can be lit in the imaging region Rc.

[0080] The organic EL display panel 50d, like the organic EL display panels 50a and 50b of the first embodiment, includes: a resin substrate 10, a TFT layer 30a provided on the resin substrate 10, an organic EL element layer 40 provided on the TFT layer 30a, and a sealing film 45 provided on the organic EL element layer 40.

[0081] In addition, in the present embodiment, an organic EL display device 70d is illustrated in which two imaging regions Rc are provided in the sparse pixel region Rt, but three or more imaging regions Rc may be provided in the sparse pixel region Rt. In addition, in the present embodiment, an organic EL display device 70d is illustrated in which two imaging regions Rc are provided in the sparse pixel region Rt of the organic EL display panel 50d corresponding to the organic EL display panel 50a, but a plurality of imaging regions Rc may be provided in the sparse pixel region Rt of the organic EL display panel 50b of the modified example of the first embodiment and the organic EL display panel 50c of the second embodiment.

[0082] The organic EL display device 70d of this embodiment is similar to the organic EL display device 70a of the first embodiment described above, and is configured such that in each sub-pixel Pa that can be lit, the light-emitting layer 3 of the organic EL element 35 is appropriately illuminated by the first TFT 9a, the second TFT 9b, and the third TFT 9c to display an image. In addition, the organic EL display device 70d is configured such that the front side of the organic EL display panel 50d is photographed through the organic EL display panel 50d by each imaging element 60 provided on the back side of the organic EL display panel 50d.

[0083] The organic EL display device 70d of this embodiment can be manufactured by making the arrangement of the sub-pixels Pa that can be lit and the sub-pixels Pb that cannot be lit different in the manufacturing method of the organic EL display device 70a of the first embodiment.

[0084] As described above, according to the organic EL display device 70d of the present embodiment, the sparse pixel region Rt including the two imaging regions Rc is provided along one side of the organic EL display panel 50d, and the density of the sub-pixels Pa that can be lit in the sparse pixel region Rt outside the imaging region Rc is lower than the density of the sub-pixels Pa that can be lit in the normal pixel region Rn, and is higher than the density of the sub-pixels Pa that can be lit in the imaging region Rc. Therefore, the sparse pixel region Rt outside the imaging region Rc is arranged between the imaging region Rc where the sub-pixels Pa that can be lit are arranged at a relatively low density and the normal pixel region Rn where the sub-pixels Pa that can be lit are arranged at a relatively high density, and in the sparse pixel region Rt, the sub-pixels Pa that can be lit are arranged at a relatively medium density. Thus, the sparse pixel region Rt outside the imaging region Rc becomes a buffer region that mitigates the change in the density of the sub-pixels Pa that can be lit, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely arranged and the normal pixel region Rn where the sub-pixels are not sparsely arranged can be made difficult to visually recognize.

[0085] In addition, according to the organic EL display device 70d of the present embodiment, the boundary between the sub-pixels Pa that can be lit in the normal pixel region Rn and the sub-pixels Pb that cannot be lit in the sparse pixel region Rt is concave-convex in a plan view, so that the boundary can be made unclear. As a result, the boundary between the normal pixel region Rn and the sparse pixel region Rt can be made difficult to be visually recognized, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely distributed and the normal pixel region Rn where the sub-pixels are not sparsely distributed can be made more difficult to be visually recognized.

[0086] In addition, according to the organic EL display device 70d of the present embodiment, a plurality of imaging regions Rc are provided in the sparse pixel region Rt, so that the sparse pixel region Rt can be shared with the plurality of imaging regions Rc. In addition, an imaging element 60 is provided in each imaging region Rc in the sparse pixel region Rt, so that a plurality of imaging elements 60 can be used to capture a fine image.

[0087] 《Fourth Implementation Mode》 Fig.12 and Fig.13 A fourth embodiment of the display device according to the present invention is shown. Fig.12 : is a top view of an organic EL display panel 50e constituting the organic EL display device of this embodiment. Fig.13 It is along Fig.12 A cross-sectional view of a sparse pixel region Rt of an organic EL display panel 50e from XIII to XIII in FIG. Fig.13 In the cross-sectional view, the source line 18f is omitted.

[0088] In the first embodiment, an organic EL display device 70a is illustrated in which an organic EL display panel 50a is provided in which no through hole is formed in the protective insulating film 20 in the sub-pixel Pb that cannot be lit, but in the present embodiment, an organic EL display device is illustrated in which an organic EL display panel 50e is provided in which a through hole Hd is formed in the protective insulating film 20 in the sub-pixel Pb that cannot be lit. In addition, in the organic EL display device of the present embodiment, only the organic EL display panel 50e is used to replace the organic EL display panel 50a in the first embodiment, and the other structures are substantially the same as those of the organic EL display device 70a, and therefore, the description will be centered on the organic EL display panel 50e.

[0089] Similar to the organic EL display panel 50a of the first embodiment, the organic EL display panel 50e includes a display area D and a frame area F provided around the display area D. Here, in the organic EL display panel 50e, the display area D includes: a normal pixel area Rn; a sparse pixel area Rt provided along an edge of one side of the organic EL display panel 50e in a manner adjacent to the normal pixel area Rn; and an imaging area Rc provided in the sparse pixel area Rt. In addition, similar to the organic EL display panel 50a of the first embodiment, in the organic EL display panel 50e, the density of sub-pixels Pa that can be lit in the sparse pixel area Rt outside the imaging area Rc is lower than the density of sub-pixels Pa that can be lit in the normal pixel area Rn and higher than the density of sub-pixels Pa that can be lit in the imaging area Rc.

[0090] like Fig.13 As shown, the organic EL display panel 50 e includes a resin substrate 10 , a TFT layer 30 e provided on the resin substrate 10 , an organic EL element layer 40 provided on the TFT layer 30 e , and a sealing film 45 provided on the organic EL element layer 40 .

[0091] The TFT substrate 30e, like the TFT layer 30a of the first embodiment, includes: a primer film 11 provided on a resin substrate 10; a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d provided on the primer film 11 for each sub-pixel Pa that can be lit; and a first planarization film 19, a protective insulating film 20, and a second planarization film 22 sequentially stacked on the first TFT 9a, the second TFT 9b, and the third TFT 9c. Here, in the TFT layer 30e, in the sub-pixel Pb that cannot be lit in the sparse pixel region Rt, like the TFT layer 30a of the first embodiment, the first TFT 9a, the second TFT 9b, the third TFT 9c, and the capacitor 9d are not provided on the primer film 11, but in a part of the sub-pixel Pb that cannot be lit, as shown in FIG. Fig.12 and Fig.13 As shown in FIG. 1 , a through hole Hd corresponding to the contact hole Ha is provided in the protective insulating film 20. Fig.12 As shown, more through holes Hd are formed on the edge side (upper side in the figure) of the organic EL display panel 50e of the sparse pixel area Rt than on the normal pixel area Rn side (lower side in the figure) of the sparse pixel area Rt, and the through holes Hd are also formed in the border area F on the edge side (outside the display area D) of the organic EL display panel 50e.

[0092] In the TFT layer 30e, similarly to the TFT layer 30a of the first embodiment, a plurality of gate lines 14d, a plurality of light emission control lines 14e, a plurality of source lines 18f, and a power supply line 21a are provided in the display region D.

[0093] The organic EL display device having the organic EL display panel 50e is configured similarly to the organic EL display device 70a of the first embodiment described above: in each sub-pixel Pa that can be lit, the light-emitting layer 3 of the organic EL element 35 is appropriately illuminated by the first TFT 9a, the second TFT 9b, and the third TFT 9c to display an image. In addition, the organic EL display device having the organic EL display panel 50e is configured such that the front side of the organic EL display panel 50e is photographed through the organic EL display panel 50e by the imaging element 60 provided on the back side of the organic EL display panel 50e.

[0094] By forming a through hole Hd when forming a contact hole Ha in the protective insulating film 20 in the manufacturing method of the organic EL display device 70a of the above-mentioned first embodiment, etching the first planarizing film 19 exposed from the contact hole Ha of the protective insulating film 20, and not etching the first planarizing film 19 exposed from the through hole Hd of the protective insulating film 20, an organic EL display device having an organic EL display panel 50e of this embodiment can be manufactured.

[0095] As described above, according to the organic EL display device including the organic EL display panel 50e of the present embodiment, the sparse pixel region Rt including the imaging region Rc is provided along one side of the organic EL display panel 50e, and the density of the sub-pixels Pa that can be lit in the sparse pixel region Rt outside the imaging region Rc is lower than the density of the sub-pixels Pa that can be lit in the normal pixel region Rn, and is higher than the density of the sub-pixels Pa that can be lit in the imaging region Rc. Therefore, the sparse pixel region Rt outside the imaging region Rc is arranged between the imaging region Rc where the sub-pixels Pa that can be lit are arranged at a relatively low density and the normal pixel region Rn where the sub-pixels Pa that can be lit are arranged at a relatively high density, and in the sparse pixel region Rt where the sub-pixels Pa that can be lit are arranged at a relatively medium density. Thus, the sparse pixel area Rt outside the imaging area Rc becomes a buffer area that mitigates changes in the density of sub-pixels Pa that can be lit, thereby making the boundary between the imaging area Rc where sub-pixels are sparse and the normal pixel area Rn where sub-pixels are not sparse difficult to visually identify.

[0096] In addition, according to the organic EL display device having the organic EL display panel 50e of the present embodiment, the boundary between the sub-pixels Pa that can be lit in the normal pixel region Rn and the sub-pixels Pb that cannot be lit in the sparse pixel region Rt is concave-convex in a plan view, so that the boundary can be made unclear. As a result, the boundary between the normal pixel region Rn and the sparse pixel region Rt can be made difficult to be visually recognized, and thus the boundary between the imaging region Rc where the sub-pixels are sparsely distributed and the normal pixel region Rn where the sub-pixels are not sparsely distributed can be made more difficult to be visually recognized.

[0097] In addition, according to the organic EL display device having the organic EL display panel 50e of the present embodiment, in a part of the sub-pixels Pb that cannot be lit in the sparse pixel region Rt, since the through hole Hd is formed in the protective insulating film 20, the gas generated from the first planarizing film 19 can be gradually released from the through hole Hd. As a result, the peeling between the first planarizing film 19 and the protective insulating film 20 can be suppressed, and the pixel circuit of the TFT layer 30e can be reliably operated, so that the occurrence of poor lighting can be suppressed. In addition, in each sub-pixel Pb that cannot be lit in the sparse pixel region Rt, when the through hole Hd is not formed in the protective insulating film 20, since the gas generated from the first planarizing film 19 is easily accumulated between the first planarizing film 19 and the protective insulating film 20, the accumulated gas is released all at once, and there is a possibility that peeling between the first planarizing film 19 and the protective insulating film 20 will occur.

[0098] In addition, according to the organic EL display device having the organic EL display panel 50e of the present embodiment, the through holes Hd formed in the protective insulating film 20 are formed more on the edge side of the organic EL display panel 50e in the sparse pixel area Rt than on the normal pixel area Rn side of the sparse pixel area Rt, and the through holes Hd are also formed in the frame area F outside the display area D on the edge side of the organic EL display panel 50e. Therefore, it is possible to effectively suppress the peeling between the first planarizing film 19 and the protective insulating film 20. Here, in the frame area F, the contact hole Ha for electrically connecting the first electrode 31 to the third TFT 9c is not provided in the protective insulating film 20, so the gas generated from the first planarizing film 19 is easily retained between the first planarizing film 19 and the protective insulating film 20.

[0099] 《Other Implementation Methods》 In the above embodiments, an organic EL layer having a five-layer stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is exemplified, but the organic EL layer may also be a three-layer stacked structure of a hole injection layer serving as a hole transport layer, a light-emitting layer, and an electron transport layer serving as an electron injection layer.

[0100] In addition, in the above-mentioned embodiments, an organic EL display device in which the first electrode is set as an anode and the second electrode is set as a cathode is illustrated, but the present invention can also be applied to an organic EL display device in which the stacking structure of the organic EL layer is reversed and the first electrode is set as a cathode and the second electrode is set as an anode.

[0101] In the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode is set as a drain electrode is exemplified. However, the present invention is also applicable to an organic EL display device in which the electrode of the TFT connected to the first electrode is called a source electrode.

[0102] In addition, in the above-mentioned embodiments, an organic EL display device is cited as an example for explanation as a display device, but the present invention can be applied to a display device having a plurality of light-emitting elements driven by current, for example, a display device having a QLED (Quantum-dot Light Emitting Diode), which is a light-emitting element using a quantum dot containing layer. Industrial Applicability

[0103] As described above, the present invention can be used in a flexible display device. Description of Reference Numerals

[0104] DDisplay area F Border area Ha, Hb contact holes Hd through hole P sub-pixel Pa (capable of lighting) sub-pixel Pb (non-lit) sub-pixel Rn normal pixel area (first display area) Rt sparse pixel area (second display area) Rc camera area (third display area) 9a First TFT (first thin film transistor) 9b Second TFT (second thin film transistor) 9a Third TFT (third thin film transistor) 10Resin substrate (base substrate) 19First planarization film 20Protective insulating film (inorganic insulating film) 21 Second planarization film 30a, 30e TFT layer (thin film transistor layer) 31 first electrode 33 Organic EL layer (organic electroluminescent layer, light-emitting functional layer) 34 Second electrode 40 organic EL element layer (light emitting element layer) 45 Sealing Film 50a, 50b, 50c, 50d, 50e organic EL display panel 60 Imaging element (electronic component) 70a, 70d are organic EL display devices.

Claims

1. A display device, comprising: A display panel having a display area in which a plurality of sub-pixels are arranged, the display area including a first display area, a second display area disposed adjacent to the first display area, and a third display area disposed within the second display area; and an electronic component disposed on one surface side of the display panel in a manner overlapping with the third display area, The display device is characterized in that The second display area is arranged along the edge of the display panel. The density of the sub-pixels that can be lit in the second display area outside the third display area is lower than the density of the sub-pixels that can be lit in the first display area, and is higher than the density of the sub-pixels that can be lit in the third display area.

2. The display device according to claim 1, characterized in that In the first display area, the sub-pixels that can be lit are arranged in a matrix. In the second display area, the sub-pixels that cannot be lit are arranged around the sub-pixels that can be lit.

3. The display device according to claim 2, characterized in that: The boundary between the sub-pixel that can be lit in the first display area and the sub-pixel that cannot be lit in the second display area has a concave-convex shape in a plan view.

4. The display device according to any one of claims 1 to 3, characterized in that: The display panel is configured to be rectangular in a plan view. The second display area is arranged along one side of the display panel.

5. The display device according to any one of claims 1 to 3, characterized in that: The display panel has an edge that is curved when viewed from above. The second display area is disposed along the curved end edge.

6. The display device according to any one of claims 1 to 3, characterized in that: The display panel is configured to be rectangular in a plan view. The second display area is disposed along a corner of the display panel.

7. The display device according to any one of claims 1 to 6, characterized in that: A plurality of the third display areas are arranged in the second display area.

8. The display device according to claim 2 or 3, characterized in that: The display panel comprises: base substrate; a thin film transistor layer, which is disposed on the base substrate and is sequentially stacked with a first planarization film, an inorganic insulating film, and a second planarization film, and a thin film transistor is arranged in each of the sub-pixels that can be lit on the base substrate side of the first planarization film; A light-emitting element layer, which is disposed on the thin film transistor layer and corresponds to a plurality of sub-pixels that can be lit, and is sequentially stacked with a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode; as well as a sealing film provided on the light emitting element layer, In the sub-pixel that can be lit, the thin film transistor and the first electrode are electrically connected to each other via a contact hole formed in the first planarization film, the inorganic insulating film, and the second planarization film, In a portion of the sub-pixel that cannot be lit, a through hole is formed in the inorganic insulating film.

9. The display device according to claim 8, characterized in that: The through holes are formed more in the second display region on the edge side of the display panel than in the second display region on the first display region side.

10. The display device according to claim 8 or 9, characterized in that: The through hole is also formed outside the display area on the edge side of the display panel.

11. The display device according to any one of claims 8 to 10, characterized in that: Each of the light-emitting functional layers is an organic electroluminescent layer.

12. The display device according to any one of claims 1 to 11, characterized in that: The electronic component is an imaging element.

13. The display device according to any one of claims 1 to 11, characterized in that: The electronic component is a light sensor.

Images