Composite film, preparation method thereof and photoelectric device

Abstract

The invention discloses a composite film, a preparation method thereof and a photoelectric device, and relates to the technical field of display. The composite film comprises a conductive layer and a first seed layer arranged on the surface of the conductive layer, the material of the conductive layer comprises first conductive metal, and the material of the first seed layer comprises molybdenum trioxide. According to the composite film provided by the invention, the continuity of the conductive layer is good, the transmittance is high, and the sheet resistance is relatively low.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a composite film and a preparation method thereof, and a photoelectric device. Background Art

[0002] Metal films have high conductivity and are widely used in optoelectronic devices such as displays, photovoltaics, and sensors. With the update of product forms and the diversification of functions, transparency and flexibility are important features that most optoelectronic products should have.

[0003] Transparent and flexible products have high requirements for thin films in display, photovoltaic, sensor and other devices, especially electrode films, which need to have high transmittance while ensuring low resistance. Existing metal films can be used as translucent films by thinning, for example, to 20nm. However, if you want to further increase the transmittance of metal films by thinning, their resistance will increase significantly. This is because metal films have a threshold thickness under general deposition conditions. When the thickness is lower than this, these films are in the form of discontinuous and flat films, also called dense island forms. Such a form will hinder the passage of current, resulting in increased resistance and decreased conductivity. In addition, because the metal film presents a discontinuous island form, the plasma exciton effect generated when light passes through the metal film is enhanced, which makes it easy to absorb the light intensity of certain light bands, further reducing the transmittance of the metal film.

[0004] At present, the continuity of metal films is poor and the square resistance is high, which affects their conductivity and needs further improvement. Summary of the invention

[0005] In view of this, the present application provides a composite film and a preparation method thereof, and a photoelectric device.

[0006] The embodiment of the present application is implemented as follows: a composite film includes a conductive layer and a first seed layer arranged on the surface of the conductive layer, the material of the conductive layer includes a first conductive metal, and the material of the first seed layer includes molybdenum trioxide and molybdenum hydroxide-doped.

[0007] Accordingly, the present invention also provides a method for preparing a composite film, comprising:

[0008] Providing a prefabricated first seed layer, wherein the material of the prefabricated first seed layer includes molybdenum hydroxide-doped;

[0009] A conductive metal oxide is disposed on the prefabricated first seed layer, and the conductive metal oxide is reacted with the molybdenum hydroxide-doped portion of the prefabricated first seed layer to form a first seed layer and a conductive layer, thereby obtaining a composite film.

[0010] Correspondingly, an embodiment of the present application further provides a photoelectric device, which includes the above-mentioned composite film, or the composite film prepared by the above-mentioned preparation method.

[0011] The composite film provided in the present application has good continuity of the conductive layer, high transmittance and low sheet resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0013] Figure 1 is a schematic diagram of the structure of the composite film provided in the embodiment of the present application;

[0014] Figure 2 is a schematic structural diagram of another composite film provided in an embodiment of the present application;

[0015] Figure 3 is a schematic structural diagram of another composite film provided in an embodiment of the present application;

[0016] Figure 4 is a schematic structural diagram of another composite film provided in an embodiment of the present application;

[0017] Figure 5 is a flow chart of a method for preparing a composite film provided in an embodiment of the present application;

[0018] Figure 6 is a flow chart of a method for preparing a third seed layer provided in an embodiment of the present application;

[0019] Figure 7 is a gas introduction process diagram during the preparation of the third seed layer provided in an embodiment of the present application;

[0020] Figure 8 This is another gas introduction process diagram in the preparation process of the third seed layer provided in the embodiment of the present application;

[0021] Fig. 9 is a schematic structural diagram of a photoelectric device provided in an embodiment of the present application;

[0022] Fig.10 is a SEM image of the conductive layer provided in Example 1 of the present application;

[0023] Fig.11 is a SEM image of the conductive layer provided in Comparative Example 1 of the present application;

[0024] Fig.12It is the square resistance diagram of Example 1 and Comparative Examples 1-2 of the present application.

[0025] Reference numerals:

[0026] Composite film 100; conductive layer 110; first seed layer 120; second seed layer 130; third seed layer 140;

[0027] Optoelectronic device 200 ; bottom electrode 210 ; functional layer 220 ; top electrode 230 . DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0029] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0030] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0031] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0032] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0033] In the early stage of formation, metal films often need to go through a long period of island growth mode. When the film is still in the island mode, its conductivity will be limited and it cannot exert its maximum conductivity. However, when the metal film can form a continuous film, its transmittance will often be greatly reduced. For example, silver film can generally form a continuous film better when it is 18nm~25nm, and its square resistance is 7Ω / □~30Ω / □ (ohm / square), and the transmittance at this time is generally 15%~25%; and when the silver film is 8nm~14nm, its square resistance increases significantly to 50Ω / □~150Ω / □, and the transmittance is generally 35%~45%. It is difficult for existing technologies to simultaneously meet the requirements of lower square resistance and higher transmittance, that is, it is difficult to meet the requirements of metal films with lower thickness and high continuity.

[0034] The technical solution of this application is as follows:

[0035] First, see Figure 1 An embodiment of the present application provides a composite film 100, which includes a conductive layer 110 and a first seed layer 120 arranged on the surface of the conductive layer 110, the material of the conductive layer 110 includes a first conductive metal, and the material of the first seed layer 120 includes molybdenum trioxide (MoO3).

[0036] It should be noted that the conductive layer 110 is a continuous thin film.

[0037] The composite film 100 provided in the present application has a conductive layer 110 with good continuity, high transmittance and low sheet resistance.

[0038] In some embodiments, the material of the first seed layer further includes molybdenum hydroxide-doped material.

[0039] It should be noted that the molybdenum hydroxide-doped is a mixture containing three elements: hydrogen, oxygen and molybdenum. The molybdenum trioxide is obtained by the redox reaction of the molybdenum hydroxide-doped and the conductive metal oxide. There are a large number of highly active reaction sites between the conductive metal oxide and the molybdenum hydroxide-doped, which significantly increases the nucleation density of the conductive metal oxide. In the process of redox reaction between the molybdenum hydroxide-doped and the conductive metal oxide, the first conductive metal present in the conductive metal oxide is replaced to form the nucleation site of the first conductive metal, which is beneficial to improve the continuity of the conductive layer 110 formed by the first conductive metal, thereby reducing the square resistance of the composite film 100 and improving its conductivity.

[0040] The composite film 100 provided in the present application, doped with molybdenum hydroxide, has high reducibility and can increase the nucleation sites of the first conductive metal during the oxidation-reduction process, thereby improving the continuity of the conductive layer 110 of the first conductive metal and improving the conductivity of the composite film 100.

[0041] In some embodiments, the first conductive metal includes one or more of silver (Ag), gold (Au), platinum (Pt), and copper (Cu). It is understood that when two or more of the first conductive metals are included, the first conductive metal is an alloy.

[0042] In some embodiments, the thickness of the conductive layer 110 is 3 nm to 12 nm, for example, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, etc. Within the thickness range, the transmittance of the conductive layer 110 is relatively high.

[0043] In some embodiments, the molar doping amount of hydrogen in the molybdenum hydroxide-doped oxide is 5% to 35%, for example, it can be 10%, 15%, 20%, 25%, 30%, etc.

[0044] In some embodiments, in the molybdenum hydroxide-doped system, the valence of the molybdenum element includes positive 5 (+5) and positive 6 (+6).

[0045] Furthermore, the content of the positive pentavalent molybdenum is greater than the content of the positive hexavalent molybdenum. It can be understood that the positive pentavalent molybdenum has a reducing property, which can cause the molybdenum hydroxide-doped with the conductive metal oxide to undergo a redox reaction, replace the first conductive metal and increase the nucleation sites of the first conductive metal.

[0046] In some embodiments, the thickness of the first seed layer 120 is 0.3 nm to 5 nm, for example, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, etc. Within the thickness range, the first seed layer 120 will not adversely affect the transmittance of the conductive layer 110 and can effectively promote the continuity of the conductive layer 110.

[0047] It can be understood that the material of the surface of the first seed layer 120 in contact with the conductive layer 110 is mainly molybdenum trioxide, and the material of the side away from the surface in contact with the conductive layer 110 is mainly molybdenum hydroxide-doped molybdenum oxide that has not reacted with the conductive metal oxide.

[0048] In some embodiments, the first seed layer 120 is a continuous and flat film. That is, the first seed layer 120 and the conductive layer 110 are stacked.

[0049] In some embodiments, the composite film 100 further includes a second seed layer 130, the second seed layer 130 and the first seed layer 120 are disposed on the same side of the conductive layer 110, and the second seed layer 130 includes a plurality of island-shaped units disposed at intervals. In other words, the second seed layer 130 has a discontinuous island-shaped structure.

[0050] Further, the first seed layer 120 is disposed between the second seed layer 130 and the conductive layer 110 .

[0051] In some embodiments, the thickness of the first seed layer 120 is greater than or equal to the thickness of the second seed layer 130 .

[0052] For further information, see Figure 2 In some embodiments, the thickness of the first seed layer 120 is greater than the thickness of the second seed layer 130, the surface of the first seed layer 120 close to the conductive layer 110 is continuous and flat, and the surface of the first seed layer 120 away from the conductive layer 110 has a plurality of pits, and the island unit fills the pits. In other words, the first seed layer 120 fills the top surface and the outer side surface of the island unit, the first seed layer 120 is in direct contact with the conductive layer 110, and the second seed layer 130 is not in direct contact with the conductive layer 110. It should be noted that the top surface of the island unit is the side of the island unit close to the conductive layer.

[0053] See also Figure 3 In some other embodiments, the thickness of the first seed layer 120 is equal to the thickness of the second seed layer 130, the first seed layer 120 has a plurality of holes, and the island-shaped unit fills the holes. In other words, the first seed layer 120 fills the outer side of the island-shaped unit, that is, the first seed layer 120 and the second seed layer 130 are in direct contact with the conductive layer 110. In this way, when the conductive layer 110 is set, the second seed layer 130 has a van der Waals attraction to the first conductive metal of the conductive layer 110, which effectively improves the speed at which the conductive layer 110 forms a continuous film.

[0054] In some embodiments, the material of the second seed layer 130 includes a second conductive metal.

[0055] In some embodiments, the second conductive metal includes one or more of silver (Ag), gold (Au), platinum (Pt), and copper (Cu).

[0056] In some embodiments, the material of the conductive layer 110 is the same as or different from the material of the second seed layer 130. Preferably, the material of the conductive layer 110 is the same as the material of the second seed layer 130.

[0057] In some embodiments, the average height of the island-shaped units is 0.3 nm to 3 nm, for example, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 2.7 nm, etc.

[0058] The average diameter of the island-shaped unit is 0.03 μm to 30 μm, for example, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, etc. It should be noted that the shape of the orthographic projection of the island-shaped unit on the conductive layer 110 can be a circle, an ellipse, an oval, a rounded square, a rounded diamond, etc. The average diameter of the island-shaped unit is the ratio of the perimeter of the orthographic projection of the island-shaped unit on the conductive layer 110 to π.

[0059] The interval between adjacent island-shaped units is 1 μm to 200 μm, for example, 5 μm, 10 μm, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, etc.

[0060] It can be understood that the interval between adjacent island-shaped units refers to the shortest straight-line distance between an island-shaped unit and other island-shaped units.

[0061] In some embodiments, see Figure 4 The composite film 100 further includes a third seed layer 140, and the third seed layer 140 is disposed on a side of the second seed layer 130 away from the conductive layer 110. It should be noted that the third seed layer 140 is a continuous film. In this way, the second seed layer 130 can cooperate with the first seed layer 120 and the third seed layer 140 to improve the diffusion ability of the conductive layer 110 on the seed layer, so that the conductive layer 110 quickly forms a continuous film.

[0062] In some embodiments, the material of the third seed layer 140 includes one or more of a third conductive metal, a metal oxide, and an organic compound.

[0063] The third conductive metal includes one or more of aluminum (Al), copper (Cu), germanium (Ge), silver (Ag), platinum (Pt), and gold (Au).

[0064] The metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The metal oxide in the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the doped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor material includes one or more of InP, GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0065] The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, and polyaniline.

[0066] Preferably, the material of the third seed layer 140 includes one or more of aluminum, copper, zinc oxide, and molybdenum oxide.

[0067] The third seed layer 140 can assist the growth of the conductive layer 110. The material of the third seed layer 140 has high conductivity, which is conducive to ensuring that the square resistance of the composite film 100 is at a low level; and the material of the third seed layer 140 is also easy to form a continuous film when the film thickness is thin. The third seed layer 140 can optimize the conductive layer 110 through the second seed layer 130 and the first seed layer 120, so that the particles of the conductive layer 110 have high wettability during deposition, and can provide more nucleation sites and diffusion activation energy for the deposition of the first conductive metal of the conductive layer 110, thereby facilitating the conductive layer 110 to quickly form a continuous film and realize the continuous form of an ultra-thin film.

[0068] In some embodiments, the thickness of the third seed layer 140 is 0.3 nm to 20 nm, for example, 1 nm, 5 nm, 10 nm, 15 nm, etc.

[0069] In some embodiments, the thickness of the composite film 100 is in the range of 3.6 nm to 37 nm, for example, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0070] Second, see Figure 5 The present application also provides a method for preparing a composite film 100, comprising:

[0071] S11, providing a prefabricated first seed layer, wherein the material of the prefabricated first seed layer includes molybdenum hydroxide-doped;

[0072] S12, disposing a conductive metal oxide on the prefabricated first seed layer, allowing the conductive metal oxide to react with the molybdenum hydroxide-doped prefabricated first seed layer to form a first seed layer 120 and a conductive layer 110, and obtaining a composite film 100.

[0073] In the S11:

[0074] In some embodiments, the method for preparing the molybdenum hydroxide-doped oxide includes: providing metallic molybdenum, hydrogen peroxide and a first solvent, mixing them, and obtaining the molybdenum hydroxide-doped oxide.

[0075] In some embodiments, the first solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0076] In some embodiments, the metallic molybdenum includes molybdenum powder.

[0077] In some embodiments, the method of mixing the metal molybdenum, hydrogen peroxide and a first solvent includes: mixing the metal molybdenum and the first solvent to obtain a metal molybdenum solution; and adding the hydrogen peroxide to the metal molybdenum solution.

[0078] In some embodiments, in the metal molybdenum solution, the mass concentration of the metal molybdenum is 7 mg / mL to 15 mg / mL, for example, 8 mg / mL, 9 mg / mL, 10 mg / mL, 11 mg / mL, 12 mg / mL, 13 mg / mL, 14 mg / mL, etc. Within the mass concentration range, the dissolution and dispersion of the metal molybdenum is facilitated.

[0079] In some embodiments, after the metal molybdenum and the first solvent are mixed, a first stirring is further performed.

[0080] Furthermore, the first stirring time is 8 min to 20 min, for example, 10 min, 12 min, 15 min, 18 min, etc. Within the stirring time range, it is beneficial for the metal molybdenum to be uniformly dispersed in the first solvent.

[0081] In some embodiments, the mass ratio of the metallic molybdenum to the hydrogen peroxide is (15-45):100, for example, 20:100, 25:100, 30:100, 35:100, 40:100, etc. The hydrogen peroxide has both reducing properties and can provide hydrogen and oxygen elements to promote the synthesis of hydrogen-doped molybdenum hydroxide.

[0082] In some embodiments, after adding the hydrogen peroxide to the metal molybdenum solution, a second stirring is also performed.

[0083] Furthermore, when the hydrogen peroxide is just added to the metal molybdenum solution, the mixed solution is gray, and after the second stirring, the mixed solution changes from gray to blue.

[0084] In some embodiments, after the metal platinum, hydrogen peroxide and solvent are mixed, the solvent is removed to obtain hydrogen-doped platinum. Furthermore, the first solvent can be removed by vacuum drying.

[0085] The specific method for forming the first seed layer 120 can adopt conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, scraping, printing, dip-pull, immersion, spraying, roll coating, casting, slit coating, strip coating, etc.

[0086] Preferably, the method of forming the first seed layer 120 is a printing method.

[0087] Specifically, the method for forming the first seed layer 120 includes: providing a molybdenum hydroxide-doped ink, wherein the molybdenum hydroxide-doped ink includes molybdenum hydroxide-doped and a second solvent, and printing the molybdenum hydroxide-doped ink to form the first seed layer 120 .

[0088] In some embodiments, in the molybdenum hydroxide-doped ink, the mass concentration of the molybdenum hydroxide-doped ink is 3 mg / mL to 45 mg / mL, for example, 5 mg / mL, 10 mg / mL, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, etc. Within the mass concentration range, the solvent dispersion of the molybdenum hydroxide-doped ink is facilitated.

[0089] In some embodiments, the second solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0090] In some embodiments, after printing the molybdenum hydroxide-doped ink, annealing is also included.

[0091] Further, the annealing temperature is 75°C to 100°C, for example, 80°C, 85°C, 90°C, 95°C, etc.; the annealing time is 8min to 20min, for example, 10min, 12min, 15min, 18min, etc. It can be understood that after printing the molybdenum hydroxide-doped ink, a wet film is obtained, and the annealing treatment is beneficial to remove the second solvent and obtain a dry film.

[0092] In S13:

[0093] In some embodiments, the conductive metal oxide includes one or more of silver oxide, gold oxide, platinum oxide, copper oxide, and cuprous oxide.

[0094] In some embodiments, the method of providing a conductive metal oxide includes: introducing oxygen and a first conductive metal vapor onto the prefabricated first seed layer to form a conductive metal oxide.

[0095] In some embodiments, the first conductive metal vapor includes one or more of silver vapor, gold vapor, platinum vapor, and copper vapor.

[0096] In some embodiments, the oxygen gas flow rate is 0.2 sccm / m 2 ~2sccm / m 2 , for example, it can be 0.5 sccm / m 2 、0.8sccm / m 2 , 1sccm / m 2 、1.2sccm / m 2 、1.5sccm / m 2 、1.8sccm / m2 wait.

[0097] In some embodiments, the time for introducing oxygen is 2s to 6s, for example, 3s, 4s, 5s, etc.

[0098] In some embodiments, the time for introducing oxygen is less than or equal to the time for introducing the first conductive metal vapor.

[0099] In some embodiments, the oxygen and the first conductive metal vapor can be introduced at the same time, and the introduction of the oxygen is terminated first. The introduced oxygen and the first conductive metal vapor introduced simultaneously react to generate a conductive metal oxide. The molybdenum hydroxide-doped molybdenum has a high reducibility. There are a large number of highly active reaction sites between the conductive metal oxide and the molybdenum hydroxide-doped molybdenum, which significantly increases the nucleation density of the conductive metal oxide. In the process of oxidation-reduction of the molybdenum hydroxide-doped molybdenum and the conductive metal oxide, the first conductive metal present in the conductive metal oxide is replaced to form the nucleation site of the first conductive metal. Continuing to introduce the first conductive metal vapor is beneficial to improving the continuity of the conductive layer 110 formed by the first conductive metal.

[0100] Specifically, taking the first conductive metal as Ag as an example, Ag contacts oxygen and undergoes the following reaction:

[0101] Ag+O2→Ag x O

[0102] Molybdenum hydroxide doped with Ag x O junction, Ag x O is easily reduced by doped molybdenum hydroxide, Ag x O is reduced to Ag, while Mo in molybdenum hydroxide +5 Oxidized to Mo +6 In other words, Ag x O is converted into Ag single substance, which acts as the conductive layer 110 and performs the conductive function. The reaction process is as follows:

[0103] Mo +5 +Ag x O→Mo +6 +Ag

[0104] It should be noted that there is a small amount of free hydrogen ions in the molybdenum hydroxide, which has reducing properties and can also reduce Ag. x O is reduced to Ag.

[0105] It should be noted that, in addition to the first conductive metal, the material of the conductive layer 110 also includes a portion of conductive metal oxide that has not been reduced by the doped molybdenum hydroxide.

[0106] In some embodiments, the method for preparing the composite film further includes: providing a third seed layer 140 and a second seed layer 130 stacked in sequence. The second seed layer 130 includes a plurality of island-shaped units spaced apart. The prefabricated first seed layer is disposed on a side of the second seed layer 130 away from the third seed layer 140, and the surface of the prefabricated first seed layer close to the second seed layer 130 has a plurality of pits, or the prefabricated first seed layer has holes, and the island-shaped units fill the pits or the holes. In other words, the prefabricated first seed layer fills the outer side surface of the island-shaped unit, or also fills the top surface of the island-shaped unit away from the third seed layer 140.

[0107] The preparation methods of the third seed layer 140 and the second seed layer 130 may adopt conventional techniques in the art, as described above, and will not be repeated here.

[0108] Preferably, the third seed layer 140 is prepared by atomic layer deposition. The third seed layer 140 prepared by atomic layer deposition has a dense film quality, low defect density, and strong controllability of film thickness, and can provide more nucleation sites for the conductive layer 110 .

[0109] Specifically, see Figure 6 , the preparation method of the third seed layer 140 includes:

[0110] S11a, providing a substrate;

[0111] S11b, providing a precursor, and introducing the precursor onto the substrate;

[0112] S11c, introducing a plasma reaction source, loading radio frequency power, reacting, and obtaining a third seed layer 140 .

[0113] In some embodiments, the precursor includes one or more of trimethylaluminum (TMA), aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, and triethylaluminum.

[0114] In some embodiments, the introducing of the precursor also includes introducing a carrier gas, and the carrier gas brings the precursor to the surface of the substrate.

[0115] Furthermore, the carrier gas includes one or more of nitrogen, helium, argon, neon, krypton, and xenon.

[0116] In some embodiments, the gas flow rate of the carrier gas is 6000 sccm / m 2 ~24000sccm / m 2 , for example, 8000 sccm / m 2 、12000sccm / m 2、15000sccm / m 2 、18000sccm / m 2 、20000sccm / m 2 、22000sccm / m 2 etc.; the time is 0.05s to 1s, for example, it can be 0.06s, 0.07s, 0.08s, 0.09s, etc.

[0117] In some embodiments, see Figure 7 and Figure 8 , after the precursor is introduced, it also includes desorption treatment. After the precursor is introduced, the precursor will be adsorbed on the substrate. Taking TMA as an example, after TMA is introduced, TMA usually dissociates a methyl group (-CH3) and adsorbs on the substrate. Adsorption includes chemical adsorption and physical adsorption. In this process, there are some chemical bonds with weaker adsorption or TMA with weaker physical adsorption. Through desorption treatment, the weaker adsorption TMA can be removed.

[0118] In some embodiments, the desorption process includes: continuously introducing a carrier gas, applying radio frequency power, and performing a carrier gas plasma treatment.

[0119] Furthermore, the radio frequency power of the carrier gas is 30 kW / m 2 ~120kW / m 2 , for example, it can be 30kW / m 2 、40kW / m 2 、50kW / m 2 、60kW / m 2 、70kW / m 2 、80kW / m 2 、90kW / m 2 , 100kW / m 2 、110kW / m 2 etc.; the RF time is 0.5s to 5s, for example, it can be 1s, 1.5s, 2s, 2.5s, 3s, 3.5s, 4s, 4.5s, etc.

[0120] In some embodiments, during the desorption process, the gas flow rate of the carrier gas is 18000 sccm / m 2 ~72000sccm / m 2 , for example, it can be 20000sccm / m 2 、30000sccm / m 2 、40000sccm / m 2 、50000sccm / m 2 、60000sccm / m 2 wait.

[0121] During the desorption process, the carrier gas plasma uses its strong plasma bombardment ability to knock off particles with weaker chemical bonds or weaker physical adsorption, freeing up more sites.

[0122] In some embodiments, the desorption process includes reintroducing the precursor.

[0123] Furthermore, the gas flow rate of the precursor introduced again is 6000 sccm / m 2 ~24000sccm / m 2 , for example, 8000 sccm / m 2 、12000sccm / m 2 、15000sccm / m 2 、18000sccm / m 2 、20000sccm / m 2 、22000sccm / m 2 etc.; the time for reintroducing the precursor is 0.05s to 1s, for example, 0.06s, 0.07s, 0.08s, 0.09s, etc.

[0124] During the process of introducing the precursor again, the precursor will completely fill the adsorption sites that were not effectively occupied during the first introduction, thereby increasing the adsorption density of the precursor during the atomic layer deposition cycle, which is beneficial to improving the compactness of the overall third seed layer 140, and further beneficial to the continuous deposition of the conductive layer 110. It can be understood that through repeated adsorption and desorption, the nucleation sites provided by the third seed layer 140 can be increased, the thickness of the composite film 100 can be reduced, and the transmittance can be increased.

[0125] In some embodiments, after the precursor is introduced onto the substrate, a first exhaust treatment is further performed. Further, the time of the first exhaust treatment is 0.2s to 5s, for example, 0.5s, 1s, 1.5s, 2s, 2.5s, 3s, 3.5s, 4s, 4.5s, etc. The first exhaust treatment can remove the residual precursor and retain the precursor tightly adsorbed on the substrate.

[0126] In some embodiments, the plasma reaction source includes one or more of hydrogen (H2), nitrogen, helium, argon, neon, krypton, and xenon.

[0127] Furthermore, the gas flow rate of the plasma reaction source is 6000 sccm / m 2 ~24000sccm / m 2 , for example, 8000 sccm / m 2 、12000sccm / m 2、15000sccm / m 2 、18000sccm / m 2 、20000sccm / m 2 、22000sccm / m 2 etc.; the time is 0.2s to 10s, for example, it can be 1s, 2s, 3s, 4s, 5s, 6s, 7s, 8s, 9s, etc.

[0128] In some embodiments, the radio frequency power of the plasma reaction source is 30 kW / m 2 ~120kW / m 2 , for example, it can be 30kW / m 2 、40kW / m 2 、50kW / m 2 、60kW / m 2 、70kW / m 2 、80kW / m 2 、90kW / m 2 , 100kW / m 2 、110kW / m 2 etc.; the radio frequency time is 0.5s to 20s, for example, it can be 1s, 2s, 5s, 8s, 10s, 12s, 15s, 18s, etc.

[0129] In this process, taking TMA as an example, the plasma removes the methyl groups in the precursor TMA adsorbed on the substrate, so that only Al atoms and a small amount of impurities are left on the substrate, thereby completing the deposition of the third seed layer 140 .

[0130] In some embodiments, after the plasma reaction source is introduced and the RF power is loaded for reaction, a second gas extraction process is also performed. Further, the time of the second gas extraction process is 0.2s to 5s, for example, it can be 0.5s, 1s, 1.5s, 2s, 2.5s, 3s, 3.5s, 4s, 4.5s, etc. The second gas extraction process can extract the residual unreacted precursor and the plasma reaction source.

[0131] In some embodiments, the method for preparing the third seed layer 140 further comprises repeating steps S11a, S11b, and S11c for multiple times to form the third seed layer 140. Further, the steps may be repeated 2 to 35 times to form a dense third seed layer 140.

[0132] Preferably, the second seed layer 130 is prepared by evaporation, which is advantageous for preparing the second seed layer 130 with a discontinuous island structure.

[0133] In a third aspect, an embodiment of the present application further provides a photoelectric device 200, which includes the above-mentioned composite film.

[0134] Specifically, see Fig. 9 The optoelectronic device 200 includes a bottom electrode 210, a light functional layer 220 and a top electrode 230 which are stacked in sequence, and the top electrode 230 includes the above-mentioned composite film. It is understood that the light functional layer 220 may include a light absorbing layer or a light emitting layer, and may also include other carrier functional layers such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

[0135] The optoelectronic device 200 includes a display device or a photovoltaic device. The composite film may be an electrode.

[0136] Furthermore, the display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0137] The photovoltaic device can be a solar cell, a transparent light energy storage window, etc.

[0138] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0139] Example 1

[0140] This embodiment provides a composite film, and the preparation method thereof includes:

[0141] Providing a polyimide flexible substrate, and transferring it into an atomic layer deposition chamber using a vacuum manipulator;

[0142] 1 g of molybdenum powder is dispersed in 100 mL of ethanol, and 4 mL of hydrogen peroxide solution is added after stirring for 100 min, and stirred again until the solution changes from gray to blue, and then dried in a vacuum chamber to obtain a molybdenum hydroxide-doped powder, wherein the molar doping amount of hydrogen is 20%; the molybdenum hydroxide-doped powder is dispersed in a solvent such as n-butanol to obtain a printing ink;

[0143] The substrate is transferred from the vacuum chamber to an inkjet printing device, and a uniform wet film of molybdenum hydroxide-doped is formed on the substrate by using the inkjet printing device;

[0144] The wet film and the substrate were placed in a vacuum drying chamber to drain the solvent, and then transferred to an oven at 80°C and heated for 10 min to form a prefabricated first seed layer with a thickness of 1 nm;

[0145] Oxygen was introduced into the surface of the prefabricated first seed layer, with an O2 flow rate of 2 sccm and an introduction time of 3 s. At the same time, a silver conductive layer was prepared by evaporation, and part of the silver reacted with oxygen to generate Ag. x O,Ag x O reacts with molybdenum hydroxide to form molybdenum trioxide and silver; after the oxygen is completely passed, silver is evaporated, and the thickness of the silver conductive layer is 8 nm, thereby obtaining a composite film.

[0146] Example 2

[0147] This embodiment is basically the same as Embodiment 1, except that the flow rate of O2 in this embodiment is 3 sccm.

[0148] Example 3

[0149] This embodiment is basically the same as Embodiment 1, except that the flow rate of O2 in this embodiment is 0.5 sccm.

[0150] Example 4

[0151] This embodiment is substantially the same as Embodiment 1, except that the thickness of the silver conductive layer in this embodiment is 3 nm.

[0152] Example 5

[0153] This embodiment is substantially the same as Embodiment 1, except that the thickness of the silver conductive layer in this embodiment is 12 nm.

[0154] Example 6

[0155] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the molar doping amount of hydrogen in the molybdenum hydroxide-doped molybdenum is 5%.

[0156] Example 7

[0157] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the molar doping amount of hydrogen in the molybdenum hydroxide-doped molybdenum is 35%.

[0158] Example 8

[0159] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the silver in the conductive layer is replaced by gold.

[0160] Example 9

[0161] This embodiment is basically the same as Embodiment 1, except that, after providing a substrate, the present embodiment includes:

[0162] Form a third seed layer on the substrate: maintain the chamber pressure at 0.2-1.5 Torr and the substrate spacing at 20-50 mm; introduce TMA, and use Ar as a carrier gas to bring the TMA in the cylinder into the chamber. The introduction time is 1 s, and the flow rate is about 20,000 sccm / m 2 ; Stop the introduction of precursor TMA and increase the flow rate of Ar to 50000sccm / m 2 , load 80kW / m 2 The RF power lasts for about 3 seconds. The residual TMA in the chamber environment is pumped away, leaving only the reactive TMA adsorbed on the substrate and the chamber wall. The pumping time is about 3 seconds. The reducing gas reaction source H2 is introduced at a flow rate of about 18000 sccm / m 2 , the input time is about 5s, 80kW / m 2 The RF power is applied for about 10 seconds; the air is pumped for 2 seconds; the above steps are repeated 15 times to form a third seed layer aluminum film with a thickness of about 0.5 nm;

[0163] A second seed layer is formed on the third seed layer; a discontinuous island structure of silver is formed by evaporation to form a second seed layer with a thickness of about 0.5 nm; and a prefabricated first seed layer is formed on the second seed layer, and the material of the prefabricated first seed layer is arranged in the island structure of the second seed layer away from the top surface and the outer side surface of the third seed layer.

[0164] Example 10

[0165] This embodiment is substantially the same as Embodiment 9, except that in this embodiment, the thickness of the second seed layer is 1 nm, and the material of the prefabricated first seed layer is disposed on the outer side of the island structure of the second seed layer.

[0166] Embodiment 11

[0167] This embodiment is basically the same as Embodiment 9, except that the flow rate of O2 in this embodiment is 3 sccm.

[0168] Example 12

[0169] This embodiment is basically the same as Embodiment 9, except that the flow rate of O2 in this embodiment is 0.5 sccm.

[0170] Embodiment 13

[0171] This embodiment is basically the same as Embodiment 9, except that in this embodiment, the molar doping amount of hydrogen in the molybdenum hydroxide-doped molybdenum is 5%.

[0172] Embodiment 14

[0173] This embodiment is basically the same as Embodiment 9, except that in this embodiment, the molar doping amount of hydrogen in the molybdenum hydroxide-doped molybdenum is 35%.

[0174] Embodiment 15

[0175] This embodiment is basically the same as Embodiment 9, except that in this embodiment, the silver in the conductive layer is replaced by gold.

[0176] Comparative Examples 1-2

[0177] Comparative Examples 1-2 are substantially the same as Example 1, except that in Comparative Examples 1-2, a silver conductive layer is formed directly on the substrate or the molybdenum trioxide film, respectively.

[0178] The conductive layers of Example 1 and Comparative Example 1 were subjected to scanning electron microscope (SEM) testing, and the SEM images of the conductive layer of Example 1 were obtained as shown in FIG. Fig.10 As shown, the SEM image of the conductive layer of Comparative Example 1 is as follows Fig.11 shown.

[0179] Depend on Fig.10 and Fig.11 It can be seen that the conductive layer of Example 1 has higher continuity, and the silver is closely arranged, while the conductive layer of Comparative Example 1 is more dispersed and has poor continuity, which is not conducive to the smoothness of current transmission.

[0180] The transmittance, sheet resistance and conductivity of the composite films in Examples 1 to 15 and Comparative Examples 1 to 2 were measured to obtain sheet resistance diagrams of the composite films in Example 1 and Comparative Examples 1 to 2. Fig.12 As shown, the transmittance, sheet resistance and conductivity of the composite films in Examples 1 to 15 and Comparative Examples 1 to 2 are shown in Table 1.

[0181] Among them, the transmittance test method: UV-vis spectrophotometer, instrument model Lambda365; test the film + glass sample, deduct the transmittance of the glass. The square resistance test method: four-probe tester, model RTS-8; test the square resistance of 5 points on the glass surface and take the average value.

[0182] Table 1

[0183]

[0184]

[0185] From Table 1 and Fig.12 It can be seen that:

[0186] It can be seen from Examples 1 to 7 and Comparative Examples 1 to 2 that the composite film prepared by the present scheme, by controlling the amount of oxygen introduced within the range provided in the present application, and the molar doping amount of hydrogen in the molybdenum hydroxide-doped film within the range provided in the present application, compared with directly preparing the silver conductive layer on the substrate or the molybdenum trioxide film, Examples 1 to 7 can effectively improve the performance of the composite film and increase the transmittance of the composite film; Fig.12 It can be clearly seen that the square resistance of the composite film of Example 1 is significantly lower than that of the composite films of Comparative Examples 1 to 2, indicating that the composite film of Example 1 can promote the smooth flow of current; wherein, the composite film of Example 4 has a lower thickness, and the composite film of Example 5 has a higher thickness, which is determined by the thickness of the silver conductive layer evaporated when preparing the conductive layer;

[0187] It can be seen from Examples 9 to 15 and Comparative Example 1 that, on the basis of Example 1, further preparing a second seed layer with an island structure and a continuous third seed layer can further improve the diffusion ability of the conductive layer on the seed stack, so that the conductive layer can quickly form a continuous film; improve the transmittance of the composite film and reduce the square resistance of the composite film.

[0188] The composite film and its preparation method and optoelectronic device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A composite film, characterized in that: It comprises a conductive layer and a first seed layer arranged on the surface of the conductive layer, the material of the conductive layer comprises a first conductive metal, and the material of the first seed layer comprises molybdenum trioxide.

2. The composite film according to claim 1, characterized in that The first conductive metal includes one or more of silver, gold, platinum and copper; and / or The thickness of the conductive layer is 3nm to 12nm; and / or The thickness of the first seed layer is 0.3 nm to 5 nm; and / or The thickness of the composite film is 3.6nm-37nm.

3. The composite film according to claim 1, characterized in that The material of the first seed layer also includes molybdenum hydroxide-doped; In the molybdenum hydroxide-doped material, the molar doping amount of hydrogen is 5% to 35%; and / or, in the molybdenum hydroxide-doped material, the valence of the molybdenum element includes positive pentavalent and positive hexavalent.

4. The composite film according to claim 1, characterized in that The first seed layer is a continuous and flat film, and the first seed layer and the conductive layer are stacked; or The composite film further includes a second seed layer, the first seed layer is arranged between the second seed layer and the conductive layer, the second seed layer includes a plurality of island-shaped units arranged at intervals, and the thickness of the first seed layer is greater than or equal to the thickness of the second seed layer; Optionally, when the thickness of the first seed layer is greater than that of the second seed layer, the surface of the first seed layer close to the conductive layer is continuous and flat, and the surface of the first seed layer away from the conductive layer has a plurality of pits, and the island-shaped units fill the pits; Optionally, when the thickness of the first seed layer is equal to the thickness of the second seed layer, the first seed layer has a plurality of holes, and the island-shaped units fill the holes.

5. The composite film according to claim 4, characterized in that The material of the second seed layer is the same as or different from the material of the conductive layer; and / or The material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper; and / or The average height of the island-shaped units is 0.3 nm to 3 nm; and / or The average diameter of the island-shaped units is 0.03 μm to 30 μm; and / or The interval between adjacent island-shaped units is 1 μm to 200 μm.

6. The composite film according to claim 4, characterized in that The composite film further comprises a third seed layer, wherein the third seed layer is arranged on a side of the second seed layer away from the conductive layer; The material of the third seed layer includes one or more of a third conductive metal, a metal compound, and an organic compound; The third conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; and / or The metal compound comprises one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the metal oxide in the undoped metal oxide particles comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the doped metal oxide comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the doped metal oxide comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor material comprises one or more of InP, GaP, the IB-IIIA-VIA semiconductor material comprises one or more of CuInS, CuGaS; and / or The organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, and polyaniline; and / or the thickness of the third seed layer is 0.3nm to 20nm.

7. A method for preparing a composite film, characterized in that: include: Providing a prefabricated first seed layer, wherein the material of the prefabricated first seed layer includes molybdenum hydroxide-doped; A conductive metal oxide is disposed on the prefabricated first seed layer, and the conductive metal oxide is reacted with the molybdenum hydroxide-doped portion of the prefabricated first seed layer to form a first seed layer and a conductive layer, thereby obtaining a composite film.

8. The preparation method according to claim 7, characterized in that: The conductive metal oxide comprises one or more of silver oxide, gold oxide, platinum oxide, copper oxide, and cuprous oxide; and / or The method for providing the conductive metal oxide comprises: introducing oxygen and first conductive metal vapor onto the prefabricated first seed layer to form the conductive metal oxide.

9. The preparation method according to claim 8, characterized in that: The oxygen gas flow rate is 0.2 sccm / m 2 ~2sccm / m 2 ; and / or The time for introducing oxygen is 2s to 6s; and / or The first conductive metal vapor includes one or more of silver vapor, gold vapor, platinum vapor, and copper vapor; and / or The time for introducing oxygen is less than or equal to the time for introducing the first conductive metal vapor.

10. The preparation method according to claim 7, characterized in that: The preparation method of the prefabricated first seed layer comprises: providing a molybdenum hydroxide-doped ink, wherein the molybdenum hydroxide-doped ink comprises molybdenum hydroxide-doped ink and a second solvent, and printing the molybdenum hydroxide-doped ink to form a prefabricated first seed layer; In the molybdenum hydroxide-doped ink, the mass concentration of the molybdenum hydroxide-doped ink is 3 mg / mL to 45 mg / mL; and / or The second solvent comprises one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or After printing the molybdenum hydroxide-doped ink, annealing is also included; the annealing temperature is 75° C. to 100° C., and the time is 8 min to 20 min.

11. The preparation method according to claim 7, characterized in that: The molar doping amount of hydrogen in the molybdenum hydroxide-doped oxide is 5% to 35%; and / or In the molybdenum hydroxide-doped oxide, the valence of the molybdenum element includes positive 5 and positive 6; and / or The thickness of the conductive layer is 3nm to 12nm; and / or The thickness of the first seed layer is 0.3 nm to 5 nm; and / or The thickness of the composite film is 3.6nm-37nm.

12. The preparation method according to claim 7, characterized in that: The method for preparing the composite film further comprises: Providing a third seed layer and a second seed layer stacked in sequence, wherein the second seed layer includes a plurality of island-shaped units arranged at intervals; The prefabricated first seed layer is arranged on a side of the second seed layer away from the third seed layer, the surface of the prefabricated first seed layer close to the second seed layer has a plurality of pits, or the prefabricated first seed layer has holes, and the island units fill the pits or the holes.

13. The preparation method according to claim 12, characterized in that: The thickness of the first seed layer is greater than or equal to the thickness of the second seed layer; and / or The material of the second seed layer is the same as or different from the material of the conductive layer; and / or The material of the second seed layer includes a second conductive metal; the second conductive metal includes one or more of silver, gold, platinum, and copper; and / or The average height of the island-shaped units is 0.3 nm to 3 nm; and / or The average diameter of the island-shaped units is 0.03 μm to 30 μm; and / or The interval between adjacent island units is 1 μm to 200 μm; and / or The material of the third seed layer includes one or more of a third conductive metal, a metal compound, and an organic compound; the third conductive metal includes one or more of aluminum, copper, germanium, silver, platinum, and gold; the metal compound includes one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials; the metal oxide in the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the doped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping elements in the doped metal oxide include Al, Mg, L i, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS, CuGaS; the organic compound includes one or more of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline; and / or The thickness of the third seed layer is 0.3 nm to 20 nm.

14. A photoelectric device, characterized in that: The optoelectronic device comprises a composite film, wherein the composite film comprises the composite film according to any one of claims 1 to 6, or comprises the composite film according to any one of claims 7 to 13.

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