E-Band frequency band folding magnetoelectric dipole antenna with parasitic patch based on high-resistance silicon substrate

Abstract

The invention provides an E-Band frequency band folding magnetoelectric dipole antenna with a parasitic patch based on a high-resistance silicon substrate, which comprises a dielectric plate and a folding magnetic dipole structure, the dielectric plate comprises a first metal layer, a first PI layer, a second metal layer, a first SiO2 layer, a high-resistance silicon layer, a second SiO2 layer, a second PI layer, a third metal layer, a third PI layer and a fourth metal layer which are sequentially and vertically arranged from top to bottom, the first metal layer is provided with an antenna radiator unit, the fourth metal layer is provided with an antenna feed port, the antenna radiator unit is connected with the fourth metal layer, and the antenna feed port is connected with the antenna radiator unit. The folding magnetic dipole structure is installed between the second metal layer and the third metal layer, one end of the folding magnetic dipole structure is connected with the second metal layer, and the other end of the folding magnetic dipole structure is connected with the third metal layer. The invention has the beneficial effects that the resonant length requirement of 1 / 4 wavelength of the magnetic dipole part is met, and the antenna can work in an expected frequency band.

Description

Technical Field

[0001] The present invention relates to the field of antenna technology, and in particular to a folded magnetoelectric dipole antenna with a parasitic patch in an E-Band frequency band based on a high-resistance silicon substrate. Background Art

[0002] The magnetoelectric dipole antenna is designed and proposed based on the complementary principle. It has the advantages of inherent broadband, stable and symmetrical radiation pattern, low backlobe radiation and low cross-polarization. The gain fluctuates little with the frequency in the entire working frequency band, making it the best choice for antennas in many wireless communication systems. Therefore, since it was proposed, the antenna has attracted widespread attention from scholars at home and abroad, and based on the antenna, antenna design schemes with different frequency bands and various styles have been proposed, making it have great application potential in many fields.

[0003] Due to the size problem caused by the packaged antenna and the inevitable loss problem between the system interconnection, the on-chip antenna that shares the same substrate with the chip has developed rapidly. It can achieve a higher degree of integration with the RF system and the antenna. However, due to the high dielectric constant and large thickness of the silicon substrate, the back power radiation and high-order surface waves will cause high on-chip antenna losses. The high-resistance silicon on-wafer process can greatly alleviate the dielectric loss due to its high resistivity substrate material, thereby bringing higher antenna radiation efficiency and improving on-chip antenna performance.

[0004] Defects of existing magnetoelectric dipole antennas:

[0005] 1. In the high-resistance silicon processing technology, the thickness of the silicon-based substrate is fixed, and the magnetoelectric dipole antenna is difficult to meet the resonant length requirement of 1 / 4 wavelength of the magnetic dipole part, resulting in the antenna being unable to operate in the desired frequency band;

[0006] 2. The antenna radiation pattern covering the entire E-Band is difficult to maintain stability across the entire frequency band;

[0007] 3. No E-Band magnetoelectric dipole antenna design working in high-resistance silicon dielectric has been reported, and it has not been verified that TSV in high-resistance silicon process can be equivalent to magnetic dipole for effective radiation. Summary of the invention

[0008] In order to solve the problems in the prior art, the present invention provides an E-Band frequency band folded magnetoelectric dipole antenna with a parasitic patch based on a high-resistance silicon substrate, comprising a dielectric plate and a folded magnetic dipole structure, wherein the dielectric plate comprises a first metal layer, a first PI layer, a second metal layer, a first SiO2 layer, a high-resistance silicon layer, a second SiO2 layer, a second PI layer, a third metal layer, a third PI layer, and a fourth metal layer which are vertically arranged in sequence from top to bottom, wherein the first metal layer is provided with an antenna radiator unit, the fourth metal layer is provided with an antenna feeding port, the antenna radiator unit is connected to the fourth metal layer, the folded magnetic dipole structure is installed between the second metal layer and the third metal layer, and one end of the folded magnetic dipole structure is connected to the second metal layer, and the other end of the folded magnetic dipole structure is connected to the third metal layer.

[0009] As a further improvement of the present invention, the antenna radiator unit is arranged on the upper surface of the first metal layer, and the antenna radiator unit includes a long strip feed bar for coupling the excitation patch arranged in the horizontal direction at the center position of the upper surface of the first metal layer, four cut-angle electric dipoles symmetrically arranged on the upper and lower sides of the long strip feed bar, and two parasitic patches arranged on the left and right sides of the long strip feed bar, the parasitic patch on the left side of the long strip feed bar is close to the cut-angle position of the two cut-angle electric dipoles on the left side of the long strip feed bar, the parasitic patch on the right side of the long strip feed bar is close to the cut-angle position of the two cut-angle electric dipoles on the right side of the long strip feed bar, and the parasitic patches are symmetrically arranged around the center point of the long strip feed bar.

[0010] As a further improvement of the present invention, the first PI layer, the second metal layer, the first SiO2 layer, the high-resistance silicon layer, the second SiO2 layer, the second PI layer, the third metal layer, and the third PI layer constitute the middle layer of the dielectric plate, and the middle layer of the dielectric plate is provided with three through holes using through silicon via technology. A metal column is respectively provided at the bottom of the two hexagonal patches and the long strip feed strip, and the metal columns are correspondingly installed in the three through holes in the middle layer of the dielectric plate, thereby connecting the hexagonal patches, the long strip feed strip and the fourth metal layer.

[0011] As a further improvement of the present invention, the magnetic dipole structure includes four metal columns and short copper sheets installed at both ends of the metal columns, the short copper sheets at the top of the metal columns are arranged on the second metal layer, and the short copper sheets at the bottom of the metal columns are arranged on the fourth metal layer.

[0012] As a further improvement of the present invention, the middle layer of the dielectric plate is provided with four mounting holes by using through silicon via technology, and the four metal columns are correspondingly mounted in the four mounting holes.

[0013] As a further improvement of the present invention, the thickness of the first metal layer is 5um, the thickness of the first PI layer is 7um, the thickness of the second metal layer is 5um, the thickness of the first SiO2 layer is 1.5um, the thickness of the high-resistance silicon layer is 200um, the thickness of the second SiO2 layer is 1.5um, the thickness of the second PI layer is 4um, the thickness of the third metal layer is 5um, the thickness of the third PI layer is 4um, and the thickness of the fourth metal layer is 5um.

[0014] As a further improvement of the present invention, the antenna feeding port is configured as a GSG structure suitable for on-chip antenna testing.

[0015] As a further improvement of the present invention, the plane size of the folded magneto-electric dipole antenna is: 2.05 mm in length*0.97 mm in width.

[0016] As a further improvement of the present invention, the parasitic patch is a hexagonal patch.

[0017] The beneficial effects of the present invention are: 1. The folded magnetoelectric dipole antenna of the present invention meets the resonant length requirement of 1 / 4 wavelength of the magnetic dipole part, and the folded magnetoelectric dipole antenna can operate in the desired frequency band; 2. The folded magnetoelectric dipole antenna of the present invention covers the antenna radiation direction of the entire E-Band frequency band and is easy to maintain stability within the entire frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a top view of the folded magnetoelectric dipole antenna of the present invention;

[0019] Figure 2 It is an exploded view of the overall structure of the folded magneto-electric dipole antenna of the present invention;

[0020] Figure 3 This is a diagram of the stacked structure of the folded magnetoelectric dipole antenna of the present invention using a high-resistance silicon process;

[0021] Figure 4 It is a structural diagram of a folded magnetic dipole of a folded magnetoelectric dipole antenna of the present invention;

[0022] Figure 5 It is a structural diagram of a parasitic patch of a folded magneto-electric dipole antenna with a short-circuited TSV of the present invention;

[0023] Figure 6 The folded magnetoelectric dipole antenna of the present invention has a 10dB impedance bandwidth covering 70.87-93.66GHz, covering the entire E-Band frequency band performance diagram;

[0024] Figure 7The peak gain of the folded magnetoelectric dipole antenna of the present invention is 6.1681dBi at 78GHz, and the 3dB gain bandwidth covers 70-86.21GHz, covering the entire E-Band frequency band;

[0025] Figure 8-9 The folded magnetoelectric dipole antenna of the present invention has E-plane and H-plane radiation patterns at 78 GHz, an E-plane half-power beam width of about 84 degrees, an H-plane half-power beam width of about 88 degrees, and a cross-polarization level lower than -15 dBi. DETAILED DESCRIPTION

[0026] The E-Band 80GHz frequency band is composed of 71G~76G / 81G~86G spectrum resources. The E-Band has a wider modulated channel spacing, so the microwave communication system of the E-Band frequency band naturally has the ability to transmit business capacity above G bits. The folded magnetoelectric dipole antenna of the present invention can be used as the RF front-end part of the E-Band communication application.

[0027] like Figure 1-3 As shown, the present invention discloses a folded magnetic dipole antenna with parasitic patches in the E-Band frequency band based on a high-resistance silicon substrate, comprising a dielectric plate and a folded magnetic dipole structure 11. The dielectric plate comprises a first metal layer 1, a first PI layer 2, a second metal layer 3, a first SiO2 layer 4, a high-resistance silicon layer 5, a second SiO2 layer 6, a second PI layer 7, a third metal layer 8, a third PI layer 9, and a fourth metal layer 10, which are vertically arranged from top to bottom. The first metal layer 1 is provided with an antenna radiator unit, and the fourth metal layer 4 is provided with an antenna feeding port. The antenna radiator unit is connected to the fourth metal layer 4. The folded magnetic dipole structure 11 is installed between the second metal layer 3 and the third metal layer 8, and one end of the folded magnetic dipole structure 11 is connected to the second metal layer 3, and the other end of the folded magnetic dipole structure 11 is connected to the third metal layer 8. The material used for the high-resistance silicon layer 5 is a high-resistance silicon substrate.

[0028] The top view of the antenna radiator unit is as follows Figure 1 As shown. From a top view, it can be seen that the antenna radiator unit arranged on the upper surface of the first metal layer 1 consists of three parts: the first part is a long strip feed strip 12 for coupling the excitation patch, the second part is composed of four corner-cut electric dipoles 13, and the third part is a hexagonal patch 14 extending outward on both sides. From a top view, the plane size of the antenna is 2.05mm*0.97mm.

[0029] Specifically:

[0030] The antenna radiator unit is arranged on the upper surface of the first metal layer 1, and the antenna radiator unit includes a long strip feed bar 12 for coupling the excitation patch, which is arranged in the horizontal direction at the center position of the upper surface of the first metal layer 1, four corner-cut electric dipoles 13 symmetrically arranged on the upper and lower sides of the long strip feed bar 12, and two hexagonal patches 14 arranged on the left and right sides of the long strip feed bar 12, the hexagonal patch 14 on the left side of the long strip feed bar 12 is close to the corner position of the two corner-cut electric dipoles 13 on the left side of the long strip feed bar 12, the hexagonal patch 14 on the right side of the long strip feed bar 12 is close to the corner position of the two corner-cut electric dipoles 13 on the right side of the long strip feed bar 12, and the hexagonal patch 14 is symmetrically arranged around the center point of the long strip feed bar 12.

[0031] The antenna feeding port is designed in the bottom metal layer, that is, the fourth metal layer. The port is set to a ground-signal-ground (GSG) structure suitable for on-chip antenna testing, and then a through-silicon via (TSV) technology is used to perform a coaxial structure-like feeding method to excite the long strip feeding bar 12 of the first metal layer 1, and then the electric dipole is excited to work through the coupling between the long strip feeding bar 12 and the cut-angle electric dipole 13 and the hexagonal parasitic patch 14.

[0032] The first PI layer 2, the second metal layer 3, the first SiO2 layer 4, the high-resistance silicon layer 5, the second SiO2 layer 6, the second PI layer 7, the third metal layer 8, and the third PI layer 9 constitute the middle layer of the dielectric plate. The middle layer of the dielectric plate uses the through silicon via technology to set three through holes. A metal column 17 is respectively provided at the bottom of the two hexagonal patches 14 and the long strip feed strip 12. The metal columns 17 are correspondingly installed in the three through holes of the middle layer of the dielectric plate, so that the hexagonal patches 14 and the long strip feed strip 12 are connected to the fourth metal layer 10.

[0033] The magnetic dipole structure 11 includes four metal pillars 15 and short copper sheets 16 installed at both ends of the metal pillars 15 . The short copper sheets 16 at the top of the metal pillars 15 are arranged on the second metal layer 3 , and the short copper sheets at the bottom of the metal pillars 15 are arranged on the fourth metal layer 10 .

[0034] The magnetic dipole part of the antenna is composed of TSV of the high-resistance silicon dielectric layer in the middle of the antenna and short copper pieces in the upper and lower metal layers of the high-resistance silicon dielectric. The two short copper pieces 16 extend the length of the magnetic dipole in the horizontal plane, so that the total length of the equivalent magnetic dipole meets the condition of 1 / 4 dielectric wavelength. The structure of the magnetic dipole is as follows Figure 4 shown.

[0035] The parasitic patch is placed along the long end of the magneto-electric dipole feed strip 12 and is installed at both ends of the long side of the feed strip 12. The patch is short-circuited with TSV at the end of the parasitic patch to adjust the current flow of the patch so that the current of the parasitic patch is in the same direction as the current on the electric dipole patch, thereby enhancing the antenna radiation gain, expanding the half-power beam width of the antenna E-plane, and stabilizing the antenna's directional pattern within the entire E-Band. The overall structure of the parasitic patch with short-circuited TSV is shown in FIG. Figure 5 shown.

[0036] The parasitic patch is a hexagonal patch 14 .

[0037] The middle layer of the dielectric plate is provided with four mounting holes using through silicon via technology, and the four metal pillars 15 are correspondingly mounted in the four mounting holes.

[0038] The thickness of the first metal layer (Cu I layer) 1 is 5um, the thickness of the first PI layer (PI I layer) 2 is 7um, the thickness of the second metal layer (Cu II layer) 3 is 5um, the thickness of the first SiO2 layer (SiO2 I layer) 4 is 1.5um, the thickness of the high-resistance silicon layer 5 is 200um, the thickness of the second SiO2 layer (SiO2 II layer) 6 is 1.5um, the thickness of the second PI layer (PI II layer) 7 is 4um, the thickness of the third metal layer (Cu III layer) 8 is 5um, the thickness of the third PI layer (PI III layer) 9 is 4um, and the thickness of the fourth metal layer (Cu IV layer) 10 is 5um.

[0039] The key points of the design of the folded magnetoelectric dipole antenna of the present invention are: designing the structure of the folded magnetoelectric dipole antenna based on the requirements of the high-resistance silicon manufacturing process; designing the folding degree of the antenna magnetic dipole part to ensure that the antenna works in the desired frequency band; and designing the parasitic patch to further expand the impedance bandwidth and radiation performance of the antenna.

[0040] The folded magnetoelectric dipole antenna of the present invention has four metal layers, namely CuⅠ, Ⅱ, Ⅲ, and Ⅳ layers, with multiple dielectric layers interspersed in the middle. The interlayer dielectric plate is a dielectric plate made by high-resistance silicon technology, and the materials are PI, SiO2, high-resistance silicon, etc. Among them, Cu represents copper, is the metal layer, PI is polyimide, and SiO2: silicon dioxide.

[0041] The folded magnetoelectric dipole antenna of the present invention has the following performances:

[0042] like Figure 6 As shown, the 10dB impedance bandwidth covers 70.87-93.66GHz, covering the entire E-Band frequency band.

[0043] like Figure 7 As shown, the peak gain is 6.1681dBi at 78GHz, and the 3dB gain bandwidth covers 70-86.21GHz, covering the entire E-Band frequency band.

[0044] like Figure 8-9 As shown, the E-plane and H-plane radiation patterns at 78 GHz, the E-plane half-power beamwidth is about 84 degrees, the H-plane half-power beamwidth is about 88 degrees, and the cross-polarization level is lower than -15 dBi.

[0045] The performance of the antenna is as follows:

[0046]

[0047] The beneficial effects of the present invention are: 1. The folded magnetoelectric dipole antenna of the present invention meets the resonant length requirement of 1 / 4 wavelength of the magnetic dipole part, and the folded magnetoelectric dipole antenna can operate in the desired frequency band; 2. The folded magnetoelectric dipole antenna of the present invention covers the antenna radiation direction of the entire E-Band frequency band and is easy to maintain stability within the entire frequency band.

[0048] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A folded magnetoelectric dipole antenna with parasitic patch in the E-Band band based on a high-resistance silicon substrate, characterized in that: The invention comprises a dielectric plate and a folded magnetic dipole structure (11), wherein the dielectric plate comprises a first metal layer (1), a first PI layer (2), a second metal layer (3), a first SiO2 layer (4), a high-resistance silicon layer (5), a second SiO2 layer (6), a second PI layer (7), a third metal layer (8), a third PI layer (9), and a fourth metal layer (10) which are vertically arranged in sequence from top to bottom, wherein the first metal layer (1) is provided with an antenna radiator unit, the fourth metal layer (4) is provided with an antenna feeding port, the antenna radiator unit is connected to the fourth metal layer (4), and the folded magnetic dipole structure (11) is installed between the second metal layer (3) and the third metal layer (8), and one end of the folded magnetic dipole structure (11) is connected to the second metal layer (3), and the other end of the folded magnetic dipole structure (11) is connected to the third metal layer (8).

2. The folded magnetoelectric dipole antenna according to claim 1, characterized in that: The antenna radiator unit is arranged on the upper surface of the first metal layer (1), and comprises a long strip feeding strip (12) arranged at the center position of the upper surface of the first metal layer (1) in the horizontal direction for coupling the excitation patch, four corner-cut electric dipoles (13) symmetrically arranged on the upper and lower sides of the long strip feeding strip (12), and two parasitic patches arranged on the left and right sides of the long strip feeding strip (12), the parasitic patch (14) on the left side of the long strip feeding strip (12) is close to the corner-cut positions of the two corner-cut electric dipoles (13) on the left side of the long strip feeding strip (12), and the parasitic patch on the right side of the long strip feeding strip (12) is close to the corner-cut positions of the two corner-cut electric dipoles (13) on the right side of the long strip feeding strip (12), and the parasitic patches are symmetrically arranged around the center point of the long strip feeding strip (12).

3. The folded magnetoelectric dipole antenna according to claim 2, characterized in that: The first PI layer (2), the second metal layer (3), the first SiO2 layer (4), the high-resistance silicon layer (5), the second SiO2 layer (6), the second PI layer (7), the third metal layer (8), and the third PI layer (9) constitute the middle layer of the dielectric plate. The middle layer of the dielectric plate is provided with three through holes using through silicon via technology. A metal column (17) is provided at the bottom of each of the two hexagonal patches (14) and the long strip feed strip (12). The metal column (17) is correspondingly installed in the three through holes of the middle layer of the dielectric plate, so that the hexagonal patches (14), the long strip feed strip (12) and the fourth metal layer (10) are connected.

4. The folded magnetoelectric dipole antenna according to claim 3, characterized in that: The magnetic dipole structure (11) comprises four metal columns (15) and short copper sheets (16) mounted at both ends of the metal columns (15), wherein the short copper sheets at the top of the metal columns (15) are arranged on the second metal layer (3), and the short copper sheets (16) at the bottom of the metal columns (15) are arranged on the fourth metal layer (10).

5. The folded magnetoelectric dipole antenna according to claim 4, characterized in that: The middle layer of the dielectric plate is provided with four mounting holes using through silicon via technology, and the four metal pillars (15) are correspondingly mounted in the four mounting holes.

6. The folded magnetoelectric dipole antenna according to claim 1, characterized in that: The thickness of the first metal layer (1) is 5um, the thickness of the first PI layer (2) is 7um, the thickness of the second metal layer (3) is 5um, the thickness of the first SiO2 layer (4) is 1.5um, the thickness of the high-resistance silicon layer (5) is 200um, the thickness of the second SiO2 layer (6) is 1.5um, the thickness of the second PI layer (7) is 4um, the thickness of the third metal layer (8) is 5um, the thickness of the third PI layer (9) is 4um, and the thickness of the fourth metal layer (10) is 5um.

7. The folded magnetoelectric dipole antenna according to claim 1, characterized in that: The antenna feed port is configured as a GSG structure suitable for on-chip antenna testing.

8. The folded magnetoelectric dipole antenna according to claim 1, characterized in that: The plane dimensions of the folded magnetoelectric dipole antenna are: length 2.05mm*width 0.97mm.

9. The folded magnetoelectric dipole antenna according to claim 2, characterized in that: The parasitic patch is a hexagonal patch (14).

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