Thin film and processing method and processing device thereof, photoelectric device and display device

Abstract

The invention discloses a thin film and a processing method and device thereof, a photoelectric device and a display device, and relates to the technical field of display. The thin film processing method comprises the following steps: providing a thin film to be processed, wherein the material of the thin film to be processed comprises inorganic nanoparticles; and applying pressure to the to-be-treated film to obtain the treated film. The thin film obtained by the thin film treatment method provided by the invention is uniform and compact.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a thin film and a processing method, a processing device, an optoelectronic device and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] Photoelectric devices are generally composed of functional film layers such as anode, hole functional layer, active layer, electron functional layer, cathode, etc. The existing functional films have low density, which affects the performance of photoelectric devices. Summary of the invention

[0004] In view of this, the present application provides a thin film and a processing method thereof, a processing device, an optoelectronic device and a display device.

[0005] The embodiment of the present application is implemented as follows: a method for processing a thin film, comprising:

[0006] Providing a film to be treated, wherein the material of the film to be treated includes inorganic nanoparticles;

[0007] Applying pressure to the film to be treated to obtain a treated film.

[0008] Correspondingly, an embodiment of the present application further provides a film, including the film treated in the above-mentioned treatment method.

[0009] Correspondingly, an embodiment of the present application further provides a processing device, which includes an elastic layer, and the material of the elastic layer includes an elastic material.

[0010] Correspondingly, an embodiment of the present application further provides a photoelectric device, comprising an anode, a functional layer and a cathode, wherein the functional layer comprises a thin film processed in the above-mentioned processing method.

[0011] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0012] The thin film processing method and processing device provided in the present application can obtain a uniform and dense thin film, and the obtained optoelectronic device has high external quantum efficiency and long service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 is a flow chart of a method for treating a thin film provided in an embodiment of the present application;

[0015] Figure 2 is a schematic structural diagram of a thin film processing device provided in an embodiment of the present application;

[0016] Figure 3 is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0017] Figure 4 is a schematic diagram of the method for preparing a pixel unit provided in an embodiment of the application before pressure is applied;

[0018] Figure 5 It is a schematic diagram of applying pressure in the method for preparing a pixel unit provided in an embodiment of the application;

[0019] Figure 6 It is a schematic diagram of the method for preparing a pixel unit provided in an embodiment of the application after pressure is applied;

[0020] Figure 7 is an AFM image of the treated film provided in Application Example 1;

[0021] Figure 8 This is an AFM image of the thin film provided in comparative example 1 of the application.

[0022] Reference numerals:

[0023] Processing device 10; elastic layer 11; first elastic layer 111; second elastic layer 112; rigid layer 12;

[0024] The film to be processed 20; the anode 30; the hole functional layer 40; the active layer 50; the electronic functional layer 60; the cathode 70; and the pixel defining layer 80. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0026] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0027] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0028] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0029] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0030] The technical solution of this application is as follows:

[0031] First, see Figure 1 , the present application embodiment provides a method for processing a thin film, comprising:

[0032] S11, providing a film 20 to be treated, wherein the material of the film 20 to be treated includes inorganic nanoparticles;

[0033] S12, applying pressure to the film 20 to be treated to obtain a treated film.

[0034] The thin film processing method provided in the present application can improve the uniformity and density of the thin film by applying pressure treatment, thereby reducing the leakage current of the thin film. When applied to optoelectronic devices, it can improve the external quantum efficiency and service life of the optoelectronic devices.

[0035] In the S11:

[0036] In some embodiments, the surface of the film 20 to be treated has a microstructure. Microstructure refers to various non-uniform structural phenomena in the crystal structure that can only be observed with the aid of an optical microscope or an electron microscope. For example, various lattice defects, domain structures, subtle exsolution phenomena, structural twins, modulation structures, etc. Specifically, the microstructure of the surface of the film 20 to be treated refers to the phenomenon that the surface of the film 20 to be treated has a non-uniform structure. In other words, the uniformity and density of the film 20 to be treated are poor, which will increase the leakage rate of the film and reduce the continuous conductivity.

[0037] In some embodiments, the inorganic nanoparticles include one of P-type inorganic nanoparticles, N-type inorganic nanoparticles, and luminescent nanoparticles.

[0038] In some embodiments, the average particle size of the P-type inorganic nanoparticles is 3 nm to 10 nm, for example, 4 nm, 6 nm, 8 nm, etc.

[0039] In some embodiments, the average particle size of the N-type inorganic nanoparticles is 3 nm to 10 nm, for example, 4 nm, 6 nm, 8 nm, etc.

[0040] In some embodiments, the average particle size of the luminescent nanoparticles is 5 nm to 20 nm, for example, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0041] In some embodiments, the P-type inorganic nanoparticles include one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0042] In some embodiments, the N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0043] In some embodiments, the luminescent nanoparticles are selected from quantum dots, and the quantum dots can be selected from but not limited to one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0044] The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot can be selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The shell of the core-shell structure quantum dot is one or more layers. The II-VI group compound can be selected from but not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compound can be selected from but not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0045] As an example, the quantum dots of the core-shell structure may be selected from, but not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS. The “ / ” in the above expressions such as CdSe / ZnS means that the substance after the “ / ” (as a shell layer) covers the substance before the “ / ” (as a core layer).

[0046] The perovskite semiconductor material may be selected from, but not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I -One or more of the .

[0047] In some embodiments, the roughness (Ra) of the thin film 20 to be processed is 2 nm to 5 nm, for example, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, etc.

[0048] It can be understood that the formation method of the film 20 to be treated can be achieved by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anode 30 oxidation, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, blade coating, printing, dip pulling, immersion, spraying, roll coating, casting, slit coating, and strip coating.

[0049] Preferably, the film 20 to be processed is formed by a printing method.

[0050] In some embodiments, the film 20 to be treated is a dry film.

[0051] In S12:

[0052] In some embodiments, the magnitude of the applied pressure is 1 kPa to 10 kPa, for example, 2 kPa, 3 kPa, 4 kPa, 5 kPa, 6 kPa, 7 kPa, 8 kPa, 9 kPa, etc. The time for applying the pressure is 5 s to 60 s, for example, 10 s, 15 s, 20 s, 25 s, 30 s, 35 s, 40 s, 45 s, 50 s, 55 s, etc. In this way, under the pressure condition, the surface flatness of the film 20 to be processed can be adjusted without damaging the internal structure of the film 20 to be processed.

[0053] In some embodiments, the roughness of the treated film is 0.5 nm to 1.5 nm, for example, 0.8 nm, 1.2 nm, 1.5 nm, etc.

[0054] In a second aspect, an embodiment of the present application further provides a film, which includes a film treated by the above-mentioned treatment method.

[0055] Third, see Figure 2 The embodiment of the present application further provides a thin film processing device 10, which is used to apply pressure to the thin film 20 to be processed in the above-mentioned processing method. The processing device 10 includes an elastic layer 11, and the material of the elastic layer 11 includes an elastic material.

[0056] Elastic materials refer to materials that are elastic at room temperature and can recover most or all of their original shape after being deformed by external forces.

[0057] The film processing method provided in the present application is processed by the processing device 10. When the elastic layer 11 squeezes the film 20 to be processed, the pressure can be evenly applied to all parts of the film 20 to be processed through the deformation of the elastic material, thereby flattening the film 20 to be processed and improving the uniformity and density of the film; and when the elastic material squeezes the film 20 to be processed, it will not produce a strong interaction with the inorganic nanoparticles to destroy the inorganic nanoparticles. After the processing device 10 processes the film 20 to be processed, the inorganic nanoparticles will not adhere to it, ensuring that the inorganic nanoparticles will not be taken away by the processing device 10.

[0058] It should be noted that the size of the processing device 10 is larger than the size of the film to be processed 20. In other words, the surface area of ​​the elastic layer 11 in contact with the film to be processed 20 is larger than the surface area of ​​the film to be processed 20. In this way, when the processing device 10 applies pressure to the film to be processed 20, it can be ensured that any part of the film to be processed 20 can be subjected to the applied pressure.

[0059] In some embodiments, the elastic layer 11 includes a first elastic layer 111 and a second elastic layer 112 . When the elastic layer 11 applies pressure to the film 20 to be processed, the second elastic layer 112 is located between the first elastic layer 111 and the film 20 to be processed.

[0060] In some embodiments, the thickness of the first elastic layer 111 is 5 μm to 200 μm, for example, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, etc.

[0061] In some embodiments, the thickness of the second elastic layer 112 is 0.01 μm to 1 μm, for example, 0.02 μm, 0.05 μm, 0.08 μm, 0.1 μm, 0.2 μm, 0.5 μm, 0.8 μm, etc.

[0062] In some embodiments, the elastic material includes a first elastic material and a second elastic material.

[0063] The material of the first elastic layer 111 is a first elastic material, and the material of the second elastic layer 112 is a second elastic material.

[0064] In some embodiments, the elastic modulus of the first elastic material is smaller than the elastic modulus of the second elastic material, that is, the first elastic material is more susceptible to deformation by external force.

[0065] It should be noted that the elastic modulus represents the stress under a uniaxial stress state divided by the strain in that direction. The larger its value is, the greater the stress that causes the material to undergo a certain elastic deformation, that is, the greater the material stiffness, that is, the smaller the elastic deformation under a certain stress.

[0066] In some embodiments, the elastic modulus of the first elastic material is 0.01 MPa to 1 MPa, for example, 0.02 MPa, 0.05 MPa, 0.08 MPa, 0.1 MPa, 0.2 MPa, 0.5 MPa, 0.8 MPa, etc. Within the elastic modulus range, it is beneficial for the first elastic layer 111 to uniformly apply pressure to various parts of the film 20 to be processed through deformation.

[0067] In some embodiments, the first elastic material includes silica gel. It is understood that the silica gel has high mechanical strength, long service life, good flexibility and toughness, and can effectively flatten the microstructure of the film 20 to be processed.

[0068] Furthermore, the silica gel includes organic silica gel and inorganic silica gel. The organic silica gel includes one or more of silicone rubber, silicone resin, silicone oil and silane coupling agent.

[0069] The silicone rubber includes one or more of methyl silicone rubber, methyl vinyl silicone rubber, methyl vinyl phenyl silicone rubber, phenylene silicone rubber, phenylene ether silicone rubber, nitrile silicone rubber, and fluorosilicone rubber.

[0070] The silicone resin includes one or more of methylphenyl silicone resin, methyl silicone resin, low phenylmethyl silicone resin, epoxy silicone resin, silicone polyester resin, phenylmethyl silicone resin, mica bonding silicone resin, polymethyl silicone resin, amino silicone resin, and fluorosilicone resin.

[0071] The silicone oil includes one or more of dimethyl silicone oil, methyl silicone oil, diethyl silicone oil, phenylmethyl silicone oil, methyl hydrogen silicone oil, phenyl silicone oil, methyl hydrogen silicone oil, methyl vinyl silicone oil, methyl ethoxy silicone oil, and hydroxy silicone oil.

[0072] The silane coupling agent includes one or more of γ-aminopropyltriethoxysilane, γ-(2,3-epoxypropoxy)propyltrimethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, and γ-aminoethylaminopropyltrimethoxysilane.

[0073] In some embodiments, the elastic modulus of the second elastic material is 0.1 MPa to 100 MPa, for example, 1 MPa, 10 MPa, 20 MPa, 40 MPa, 60 MPa, 80 MPa, 90 MPa, etc. Within the elastic modulus range, the first elastic layer 111 is conducive to driving the second elastic layer 112 to extrude and flatten the film 20 to be processed simultaneously.

[0074] In some embodiments, the surface energy of the second elastic material is 1 mJ / m 2 ~25mJ / m 2 , for example, it can be 2mJ / m 2 , 5mJ / m 2 、8mJ / m 2 、10mJ / m 2 、12mJ / m 2 、15mJ / m 2 、18mJ / m 2 、20mJ / m 2 、22mJ / m 2 Etc. Within the range of the surface energy, it is beneficial for the processing device 10 to be separated from the film after processing and will not adsorb the inorganic nanoparticles.

[0075] In some embodiments, the second elastic material includes a release agent. The release agent includes an elastic polymer.

[0076] Furthermore, the elastic polymer includes one or more of polydimethylsiloxane, polydiethylsiloxane, polymethylphenylsiloxane, polyethylene, polypropylene, polyvinyl chloride, polyester, polyperfluoroethylene propylene, polyhexafluoropropylene, polychlorotrifluoroethylene, and polytrifluoroethylene.

[0077] In some embodiments, the processing device 10 further includes a rigid layer 12. When the elastic layer 11 applies pressure to the film 20 to be processed, the rigid layer 12 is located on a side of the elastic layer 11 away from the film 20 to be processed. It can be understood that the rigid layer 12 is used to fix and support the elastic layer 11, and is convenient for fixing when pressure is subsequently applied and for receiving the pressure delivered by the mechanism, so that the pressure can be evenly distributed to the elastic layer 11.

[0078] In other words, the rigid layer 12 is located on a side of the first elastic layer 111 away from the second elastic layer 112 .

[0079] In some embodiments, the thickness of the rigid layer 12 is greater than or equal to 0.5 mm, for example, it can be 0.8 mm, 1 mm, 2 mm, 5 mm, 8 mm, 10 mm, etc. In this way, it is helpful to apply pressure to the rigid layer 12 and facilitate operation.

[0080] In some embodiments, the material of the rigid layer 12 includes one or more of glass, ceramic, metal, and alloy. Specifically, the material of the rigid layer 12 includes stainless steel, aluminum alloy, and the like.

[0081] The processing device 10 can be manufactured by a common manufacturing method in the art.

[0082] Illustratively, in some embodiments, the preparation method of the processing device 10 is a coating method, including sequentially coating the rigid layer 12 and the elastic layer 11 using a solution method to obtain the processing device 10 .

[0083] Specifically, the coating speed is 10 mm / s to 100 mm / s, for example, 10 mm / s, 20 mm / s, 50 mm / s, 60 mm / s, 80 mm / s, 90 mm / s, etc.; the liquid output of the coating head is 10 μL / s to 100 μL / s, for example, 20 μL / s, 30 μL / s, 50 μL / s, 800 μL / s, etc.; the height of the coating head is 1 μm to 20 μm, for example, 2 μm, 5 μm, 8 μm, 10 μm, 12 μm, etc.

[0084] In other embodiments, the processing device 10 is prepared by a bonding method, which includes bonding the rigid layer 12 and the elastic layer 11 by an adhesive to obtain the processing device 10 .

[0085] Furthermore, the adhesive includes one or more of a resin adhesive and a silicone rubber adhesive.

[0086] Fourth, please refer to Figure 3 The embodiment of the present application further provides a photoelectric device, including an anode 30, a functional layer and a cathode 70, wherein the functional layer includes a thin film processed by the above processing method.

[0087] In some embodiments, the optoelectronic device comprises a light emitting diode.

[0088] In some embodiments, the functional layer includes one or more of a hole functional layer 40, an active layer 50, and an electronic functional layer 60 arranged in sequence from the anode 30 to the cathode 70, and one or more of the hole functional layer 40, the active layer 50, and the electronic functional layer 60 include a thin film processed by the above-mentioned processing method.

[0089] It can be understood that the photoelectric device can be an upright photoelectric device or an inverted photoelectric device.

[0090] The hole functional layer 40 includes one or more of a hole injection layer and a hole transport layer.

[0091] The electronic functional layer 60 includes one or more of an electron injection layer and an electron transport layer.

[0092] In some embodiments, the materials of the anode 30 and the cathode 70 independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0093] In some embodiments, when the hole functional layer 40 includes the above-mentioned treated film, the inorganic nanoparticles include P-type inorganic nanoparticles; when the electronic functional layer 60 and / or the active layer 50 include the above-mentioned treated film, the material of the hole functional layer 40 includes the P-type inorganic nanoparticles, 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N , N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'- dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbyl) The invention can be one or more of the following: poly(1,2-di(1-naphthalene-1-yl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, and undoped graphene.

[0094] In some embodiments, the material of the electronic functional layer 60 includes N-type inorganic nanoparticles.

[0095] In some embodiments, when the active layer 50 includes the above-mentioned treated film, the inorganic nanoparticles include luminescent nanoparticles; when the electronic functional layer 60 and / or the hole functional layer 40 include the above-mentioned treated film, the material of the active layer 50 includes the luminescent nanoparticles or organic luminescent materials, and the organic luminescent material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diaromatic anthracene derivatives, distilbenes aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, and Exciplex luminescent materials.

[0096] In a fifth aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0097] In some embodiments, the display device includes a pixel unit, and the pixel unit includes a plurality of optoelectronic devices, and the optoelectronic devices are connected through a pixel definition layer 80 .

[0098] In some embodiments, see Figure 4 , Figure 5 and Figure 6 , the preparation method of the pixel unit includes:

[0099] Providing a pixel unit preform, the pixel unit preform comprising pixel defining layers 80 arranged in sequence and spaced apart, two adjacent pixel defining layers 80 defining an optoelectronic device region; the pixel unit preform further comprising a first electrode in the optoelectronic device region and a functional layer to be processed on the first electrode;

[0100] Applying pressure to the functional layer to be processed by using the processing device 10 to form a processed functional layer;

[0101] A second electrode is formed on the processed functional layer to obtain a pixel unit.

[0102] It should be noted that the use of the processing device 10 to apply pressure to the functional layer to be processed includes using the processing device 10 to apply pressure to each functional layer to be processed in each photoelectric region at the same time. Since the elastic layer 11 in the processing device 10 is elastic and has a buffering property when contacting the pixel defining layer 80, the elastic layer 11 located directly above the functional layer to be processed continues to apply pressure downward to improve the uniformity and density of the functional layer to be processed. This solution does not require the preparation of pressure-applying devices of corresponding specifications for different pixel unit preforms. The processing device 10 of the thin film can be adjusted accordingly according to the corresponding specifications of the preparation of different pixel unit preforms. The structure and operation process are simple and highly adaptable.

[0103] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0104] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0105] Example 1

[0106] This embodiment provides a treated film, and the preparation method is as follows:

[0107] Providing a substrate, and forming a CdZnSe quantum dot thin film to be processed on the substrate by a printing method;

[0108] A processing device is provided, comprising a stainless steel rigid layer, a methylphenyl silicone resin first elastic layer, and a polydimethylsiloxane second elastic layer stacked in sequence. The processing device is used to apply a pressure of 5kPa for 30s to the film to be processed, wherein the second elastic layer contacts the film to be processed, to obtain a processed CdZnSe film.

[0109] Example 2

[0110] Example 2 is substantially the same as Example 1, except that in Example 2, the methyl phenyl silicone resin is replaced by an inorganic silica gel material.

[0111] Example 3

[0112] Example 3 is substantially the same as Example 1, except that polydimethylsiloxane is replaced by polytetrafluoroethylene in Example 3.

[0113] Example 4

[0114] Example 4 is substantially the same as Example 1, except that the pressure applied in Example 4 is 10 kPa.

[0115] Example 5

[0116] Example 4 is substantially the same as Example 1, except that the pressure applied in Example 4 is 1 kPa.

[0117] Example 6

[0118] Example 6 is substantially the same as Example 1, except that the pressure is applied for 60 seconds in Example 6.

[0119] Example 7

[0120] Example 7 is substantially the same as Example 1, except that the pressure is applied for 5 seconds in Example 7.

[0121] Example 8

[0122] Example 8 is substantially the same as Example 1, except that in Example 8, CdZnSe quantum dots are replaced with N-type inorganic nanoparticles ZnO.

[0123] Example 9

[0124] Example 9 is substantially the same as Example 1, except that, in Example 9, CdZnSe quantum dots are replaced with P-type inorganic nanoparticles NiO.

[0125] Comparative Example 1

[0126] Comparative Example 1 is substantially the same as Example 1, except that the pressure treatment by the treatment device is not performed in Comparative Example 1.

[0127] Comparative Example 2

[0128] Comparative Example 2 is substantially the same as Example 8, except that the pressure treatment by the treatment device is not performed in Comparative Example 2.

[0129] Comparative Example 3

[0130] Comparative Example 3 is substantially the same as Example 9, except that the pressure treatment by the treatment device is not performed in Comparative Example 3.

[0131] The films treated in Examples 1 to 9 and the films in Comparative Examples 1 to 3 were tested by AFM atomic force microscopy, and the AFM images of Example 1 were obtained as follows: Figure 7 As shown, the AFM image of Comparative Example 1 is obtained as Figure 8 As shown, the roughness (Ra) results of the films treated in Examples 1 to 9 and the films of Comparative Examples 1 to 3 are shown in Table 1.

[0132] Table 1

[0133]

[0134] From Table 1 and Figures 7-8 It can be seen that:

[0135] From Examples 1 to 3 and Comparative Example 1, Figures 7-8 It can be seen that the use of the processing device provided by the present application to process the film to be processed can effectively reduce the roughness of the film and improve the density of the film; especially Figure 7 and Figure 8 It can be clearly seen that the material distribution in the film of Comparative Example 1 is extremely uneven, which will affect the performance of the film;

[0136] It can be seen from Examples 1, 4 to 7 and Comparative Example 1 that the treatment time and pressure of the treatment device have a certain influence on the roughness of the film, among which the treatment pressure has a more significant effect than the treatment time. Within the range provided in the present application, when the treatment pressure is relatively large, the roughness of the film is low; the treatment time has little effect on the roughness of the film, and the roughness is effectively reduced compared with Comparative Example 1;

[0137] It can be seen from Examples 1, 8 to 9 and Comparative Examples 1 to 3 that the roughness of different inorganic nanoparticles is different, among which the roughness of N-type semiconductor inorganic nanoparticles is smaller than that of P-type semiconductor inorganic nanoparticles, which is smaller than the roughness of luminescent nanoparticles. However, for the three types of inorganic nanoparticles, the roughness of the film can be effectively reduced after treatment by the treatment device.

[0138] Device Example 1

[0139] This device embodiment provides a photoelectric device, and the preparation method is as follows:

[0140] The ITO-coated substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, then washed with deionized water and dried, then dried on a hot plate at 150°C for 10 minutes, and then irradiated with ultraviolet light for 20 minutes to increase the work function of ITO and form an anode;

[0141] Place in an inert atmosphere, spin-coat 8 mg / mL NiO at 3000 rpm for 30 s, and then heat on a 170°C hot plate for 20 min to form a hole transport layer with a thickness of 15 nm.

[0142] A light-emitting layer with a thickness of 40 nm was formed by the method of Example 1;

[0143] 40 mg / mL of 15% Mg-doped ZnO was spin-coated on the light-emitting layer at a speed of 4000 rpm for 30 s, followed by low-pressure treatment at 0.01 Pa for more than 2 min to form an electron transport layer with a thickness of 40 nm.

[0144] Cathode deposition is performed on the processed device by thermal evaporation with a vacuum not higher than 3x10 -4 Pa, evaporate Al at a rate of 1 Å / s for 1000 s to form a cathode with a thickness of 100 nm;

[0145] Encapsulation is performed to obtain a quantum dot light emitting diode.

[0146] Device Examples 2 to 7

[0147] Device Examples 2 to 7 are substantially the same as Device Example 1, with the only difference being that the light-emitting layers are formed according to Examples 2 to 7, respectively.

[0148] Device Example 8

[0149] Device Example 8 is substantially the same as Device Example 1, except that the electron transport layer is formed by the method of Example 8, and the light-emitting layer is formed by the method of Comparative Example 1.

[0150] Device Example 9

[0151] Device Example 9 is substantially the same as Device Example 1, except that the hole transport layer is formed by the method of Example 9, and the light-emitting layer is formed by the method of Comparative Example 1.

[0152] Device Example 10

[0153] Device Example 10 is substantially the same as Device Example 1, with the only difference being that the electron transport layer is formed by the method of Example 8, and the hole transport layer is formed by the method of Example 9.

[0154] Device Comparison

[0155] The device comparative example is substantially the same as the device embodiment 1, except that the light-emitting layer is formed by the method of the comparative example 1.

[0156] The external quantum efficiency EQE and T95@1knit of the optoelectronic devices of device embodiments 1 to 10 and the device comparison example were tested, and the results were shown in Table 2.

[0157] Among them, the test method of external quantum efficiency EQE is: the ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, the unit is %, which is an important parameter to measure the quality of electroluminescent devices, and can be obtained by measuring with EQE optical testing instruments. The specific calculation formula is as follows:

[0158]

[0159] Among them, η e is the light output coupling efficiency, η ris the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of photon-generating excitons to the total number of excitons, K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0160] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0161] The test method for the life span T95@1000nit is: the time required for the device to reduce its brightness to a certain proportion of the maximum brightness under constant current or voltage driving. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula. For example, the life span at 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0162]

[0163] Among them, T95 L For lifespan at low brightness, T95 H is the measured lifetime under high brightness, L H To accelerate the device to the highest brightness, L L is 1000nit, A is the acceleration factor, and this experiment measured the lifespan of several groups of QLED devices at rated brightness and found that the A value was 1.7.

[0164] Table 2

[0165]

[0166] From Table 2, we can see that:

[0167] It can be seen from device embodiments 1 to 3 and device comparative example 1 that the use of the treated thin film provided in the present application as the light-emitting layer of the optoelectronic device can effectively improve the external quantum efficiency of the optoelectronic device and extend the service life of the optoelectronic device compared with the conventional device of the device comparative example;

[0168] It can be seen from device embodiments 1, 4 to 7 and device comparative example 1 that the effect of the treatment time and pressure of the treatment device on the film is also reflected in the effect on the performance of the optoelectronic device, wherein the treatment pressure has a more significant effect on the external quantum efficiency and service life of the optoelectronic device. Within the treatment pressure range provided in the present application, when the treatment pressure is relatively large, the external quantum efficiency and service life of the optoelectronic device are significantly improved; the treatment time has a more obvious effect on the service life of the optoelectronic device. Within the treatment time range provided in the present application, the service life of the optoelectronic device can be effectively improved;

[0169] It can be seen from device embodiments 1, 8 to 10 and the device comparison examples that in the optoelectronic device, whether the thin film of the light-emitting layer, the electronic functional layer or the hole functional layer has been treated, the performance of the optoelectronic device can be effectively improved. Among them, the thin films of the light-emitting layer, the electronic functional layer and the hole functional layer in Example 10 have all been treated, and the external quantum efficiency and service life of the optoelectronic device have been significantly improved compared with the optoelectronic device in which only one layer of the thin film has been treated, as well as compared with the device comparison example.

[0170] The thin film and its processing method, processing device, optoelectronic device and display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for treating a thin film, characterized in that: include: Providing a film to be treated, wherein the material of the film to be treated includes inorganic nanoparticles; Applying pressure to the film to be treated to obtain a treated film.

2. The processing method according to claim 1, characterized in that The magnitude of the applied pressure is 1 kPa to 10 kPa; and / or The time of applying pressure is 5s to 60s; and / or The roughness of the film to be treated is 2nm to 5nm; and / or The roughness of the film after the treatment is 0.5nm-1.5nm.

3. The processing method according to claim 1, characterized in that: The inorganic nanoparticles include one of P-type inorganic nanoparticles, N-type inorganic nanoparticles, and luminescent nanoparticles; and / or The film to be treated is a dry film.

4. The processing method according to claim 3, characterized in that: The average particle size of the P-type inorganic nanoparticles is 3nm to 10nm; and / or The average particle size of the N-type inorganic nanoparticles is 3nm to 10nm; and / or The average particle size of the luminescent nanoparticles is 5nm to 20nm; and / or The P-type inorganic nanoparticles include one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride; and / or The N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS. And / or The luminescent nanoparticles are selected from quantum dots, and the quantum dots are selected from one or more of single-structure quantum dots, core-shell quantum dots and perovskite semiconductor materials; the material of the single-structure quantum dots, the core material of the core-shell quantum dots and the shell material of the core-shell quantum dots are respectively selected from one or more of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds; the shell of the core-shell quantum dots is one or more layers; the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, Hg One or more of Te, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is selected from SnS, One or more of SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlN One or more of As, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is one or more of CuInS2, CuInSe2 and AgInS2;The quantum dots of the core-shell structure are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

5. A film, characterized in that: The invention comprises a film treated by the treatment method according to any one of claims 1 to 4.

6. A thin film processing device, characterized in that: The processing device comprises an elastic layer, and the material of the elastic layer comprises an elastic material.

7. The processing device according to claim 6, characterized in that The elastic layer comprises a first elastic layer and a second elastic layer; The elastic material includes a first elastic material and a second elastic material; the material of the first elastic layer is the first elastic material, and the material of the second elastic layer is the second elastic material; the elastic modulus of the first elastic material is smaller than the elastic modulus of the second elastic material.

8. The processing device according to claim 7, characterized in that The thickness of the first elastic layer is 5 μm to 200 μm; and / or The thickness of the second elastic layer is 0.01 μm to 1 μm; and / or The elastic modulus of the first elastic material is 0.01 MPa to 1 MPa; and / or The elastic modulus of the second elastic material is 0.1 MPa to 100 MPa; and / or The surface energy of the second elastic material is 1 mJ / m 2 ~25mJ / m 2 .

9. The processing device according to claim 7, characterized in that The first elastic material includes silicone; the silicone includes organic silicone and inorganic silicone; the organic silicone includes one or more of silicone rubber, silicone resin, silicone oil, and silane coupling agent; the silicone rubber includes one or more of methyl silicone rubber, methyl vinyl silicone rubber, methyl vinyl phenyl silicone rubber, phenylene silicone rubber, phenylene ether silicone rubber, nitrile silicone rubber, and fluorosilicone rubber; the silicone resin includes one or more of methyl phenyl silicone resin, methyl silicone resin, low phenyl methyl silicone resin, epoxy silicone resin, silicone polyester resin, phenyl methyl silicone resin, mica bonding silicone resin, polymethyl silicone resin, amino silicone resin, and fluorosilicone resin; The silicone oil includes one or more of dimethyl silicone oil, methyl silicone oil, diethyl silicone oil, phenylmethyl silicone oil, methyl hydrogen silicone oil, phenyl silicone oil, methyl hydrogen silicone oil, methyl vinyl silicone oil, methylethoxy silicone oil, and hydroxy silicone oil; the silane coupling agent includes one or more of γ-aminopropyltriethoxysilane, γ-(2,3-epoxypropoxy)propyltrimethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, and γ-aminoethylaminopropyltrimethoxysilane; and / or The second elastic material includes a release agent; the release agent includes an elastic polymer; the elastic polymer includes one or more of polydimethylsiloxane, polydiethylsiloxane, polymethylphenylsiloxane, polyethylene, polypropylene, polyvinyl chloride, polyester, polyperfluoroethylene propylene, polyhexafluoropropylene, polychlorotrifluoroethylene, and polytrifluoroethylene.

10. The processing device according to claim 7, characterized in that The processing device further comprises a rigid layer, wherein the rigid layer is located on a side of the first elastic layer away from the second elastic layer; The thickness of the rigid layer is greater than or equal to 0.5 mm; and / or the material of the rigid layer includes one or more of glass, ceramic, metal, and alloy.

11. A photoelectric device, characterized in that: The method comprises an anode, a functional layer and a cathode, wherein the functional layer comprises a thin film treated by the treatment method according to any one of claims 1 to 4.

12. The optoelectronic device according to claim 11, characterized in that The functional layer includes one or more of a hole functional layer, an active layer, and an electronic functional layer sequentially arranged from the anode to the cathode, and one or more of the hole functional layer, the active layer, and the electronic functional layer includes the processed film.

13. The optoelectronic device according to claim 12, characterized in that The materials of the anode and the cathode independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or When the hole functional layer includes the treated film, the inorganic nanoparticles include P-type inorganic nanoparticles; when the electronic functional layer and / or the active layer includes the treated film, the material of the hole functional layer includes the P-type inorganic nanoparticles, 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)- )-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7- diphenylamine)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1, One or more of 1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, and undoped graphene; and / or The material of the electronic functional layer includes N-type inorganic nanoparticles; and / or When the active layer includes the treated film, the inorganic nanoparticles include luminescent nanoparticles; when the electronic functional layer and / or the hole functional layer includes the treated film, the material of the active layer includes the luminescent nanoparticles or organic luminescent materials, and the organic luminescent material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing covalent bonds of BN, HLCT materials, and Exciplex luminescent materials.

14. A display device, characterized in that: The optoelectronic device comprises the optoelectronic device according to any one of claims 11 to 13.

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