Electronic channel multiplexing method for pixel-type multi-anode semiconductor detector array

Abstract

The present application discloses an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array, which relates to the field of ray detection technology. The method comprises: for each cathode of each pixel-type multi-anode semiconductor detector, one cathode electronic channel is used for reading to obtain N cathode electronic channels; one anode pixel is selected from a plurality of anode pixels that have not been connected to the anode electronic channel in each pixel-type multi-anode semiconductor detector, respectively, to obtain N anode pixels and number them as a group, and then read out to one anode electronic channel to obtain M anode electronic channels; then case screening is performed, and the specific position where the ray hits the pixel-type multi-anode semiconductor detector array is inferred based on the screened valid cases. The present application can reduce the number of electronic channels required to read out all detection units.

Description

Technical Field

[0001] The present application relates to the field of ray detection technology, and in particular to an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array. Background Art

[0002] Ray detection is widely used in industrial production, medical care, scientific research and other fields. Detecting rays can not only be used for industrial flaw detection, tumor treatment, radiation breeding, radioactivity detection, etc., but also can be used to study major scientific issues such as the origin of the universe and the evolution of stars. Semiconductor detectors have the advantages of high energy resolution, fast time response, and simple structure, and have been widely used in the field of ray detection. The pixel-type multi-anode semiconductor detector has a cathode and multiple pixel-type anodes. Due to its pixel-type anode structure, it can quickly and accurately obtain the two-dimensional position of the action point of the ray and the semiconductor detector. Combined with the depth information, the action position of the ray and the semiconductor detector can be accurately detected in three dimensions.

[0003] The working principle of semiconductor detectors is as follows: When a semiconductor detector is working, a high voltage is applied between its anode and cathode, and a strong electric field exists in the semiconductor detector. The radiation interacts with the semiconductor detector to generate electron-hole pairs. Electrons and holes move toward the two poles respectively under the action of the external electric field, and generate induced charge and current pulse signals at the anode and cathode respectively.

[0004] The radiation interacts with the semiconductor detector to generate electron-hole pairs. Semiconductors have large atomic numbers and high densities, so the range of electrons is short and is basically limited to the detection range of several adjacent anode units. Only these anodes will generate signals, and other anodes will not. At the same time, the cathodes corresponding to these anode pixels will also generate signals. Therefore, the cathode of a semiconductor detector generates a signal indicating that the radiation interacts with the semiconductor detector, and the anode of the semiconductor detector generates a signal indicating that the radiation hits this anode detection unit, thereby locating the position where the radiation interacts with the semiconductor detector.

[0005] Usually, each detection unit (including the anode and cathode) requires a front-end electronic channel for readout, so as to infer the hit situation of the detection unit based on the measurement results of the electronic channel. However, the size of a single semiconductor detector is small, and usually in some situations of ray detection, multiple semiconductor detectors need to be spliced ​​to increase the detection area. At the same time, in order to achieve higher position resolution, it is necessary to limit the size of each anode detection unit of the detector to make its detection range more refined. Both of these requirements will result in a significant increase in the number of anode detection units and the electronic channels required to process the signals of each detection unit. Therefore, the multiplexing of electronic channels has become an effective way to solve the large-scale readout channel and high integration requirements of detection devices.

[0006] Readout electronics is the key part of converting and recording the signal of each detection unit in the semiconductor detector, where the detection unit refers to the anode and cathode of the semiconductor detector. Both the anode and cathode can be used as a detection unit, namely the anode detection unit and the cathode detection unit. When the rays enter the semiconductor detector, electron-hole pairs are generated in the semiconductor detector. This signal is very weak and cannot be recognized by a computer or other data processing and analysis equipment. The work done by the readout electronics is to amplify, shape and collect weak signals, and convert them into digital signals for transmission to the computer. Normally, each detection unit of a semiconductor detector needs to be configured with an electronic channel for readout, and the pixel-type multi-anode semiconductor detector has a large number of detection units, so a large number of electronic channels are required for readout processing.

[0007] Based on this, in view of the continuous increase in detector detection units caused by the requirements of pixel-type multi-anode semiconductor radiation detection devices for large detection area and high position resolution, which leads to a sharp increase in the number of electronic channels required to process the signals of each detection unit, how to provide an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array to reduce the number of electronic channels required to read out all detection units, and thereby solve the current problem of the sharp increase in the number of electronic channels, has become a technical problem that needs to be urgently solved in this field. Summary of the invention

[0008] The purpose of the present application is to provide an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array, which can reduce the number of electronic channels required to read out the signals of all detection units.

[0009] To achieve the above objectives, this application provides the following solutions.

[0010] The present application proposes an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array, which specifically includes the following steps.

[0011] Step S1: For N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array, one cathode of each pixel-type multi-anode semiconductor detector is read out using one cathode electronic channel to obtain N cathode electronic channels; each pixel-type multi-anode semiconductor detector includes M anode pixels and one cathode.

[0012] Step S2: For the M anode pixels of each pixel-type multi-anode semiconductor detector, select one anode pixel from a number of anode pixels in each pixel-type multi-anode semiconductor detector that have not yet been connected to the anode electronics channel to obtain N anode pixels, and number the N anode pixels as a group to obtain anode pixel numbering information, and merge the N anode pixels in the same group and read them out to one anode electronics channel.

[0013] Step S3: Repeat step S2 until all anode pixels of all pixel-type multi-anode semiconductor detectors are read out to corresponding anode electronic channels, thereby obtaining M anode electronic channels.

[0014] Step S4: screening cases based on the N cathode electronic channels and the M anode electronic channels, and inferring the specific position where the rays hit the pixel-type multi-anode semiconductor detector array based on the screened valid cases.

[0015] Optionally, before step S1, the following steps are also included.

[0016] Each pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array is numbered in sequence to obtain pixel-type multi-anode semiconductor detector numbering information; the pixel-type multi-anode semiconductor detector numbering information is used to determine the specific position of a pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array.

[0017] Optionally, each pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array is numbered in sequence to obtain the pixel-type multi-anode semiconductor detector numbering information, which specifically includes the following steps.

[0018] The N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array are numbered in sequence so that each pixel-type multi-anode semiconductor detector corresponds to a number, thereby obtaining the pixel-type multi-anode semiconductor detector numbering information.

[0019] Optionally, step S4 specifically includes the following steps.

[0020] Cases are screened based on N cathode electronic channels and M anode electronic channels, invalid cases are eliminated, and valid cases are retained.

[0021] Based on effective examples, the specific position where the rays hit the pixel-type multi-anode semiconductor detector array is inferred.

[0022] Optionally, case screening is performed based on N cathode electronic channels and M anode electronic channels to eliminate invalid cases and retain valid cases, which specifically includes the following steps.

[0023] According to N cathode electronic channels and M anode electronic channels, the signal collection conditions of each cathode electronic channel and each anode electronic channel are determined respectively when the rays hit the pixel-type multi-anode semiconductor detector array.

[0024] According to the signal collection conditions of each cathode electronic channel and each anode electronic channel, invalid cases where multiple cathode electronic channels collect signals at the same time are eliminated to obtain valid cases.

[0025] Optionally, based on effective examples, the specific position where the radiation hits the pixel-type multi-anode semiconductor detector array is inferred, which specifically includes the following steps.

[0026] According to the signal collection conditions of each cathode electronics channel in the effective case and the number information of the pixel-type multi-anode semiconductor detector, the hit pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array is determined.

[0027] According to the signal collection situation of the anode electronics channel and the anode pixel number information of the hit pixel-type multi-anode semiconductor detector, the specific position of the hit anode pixel in the hit pixel-type multi-anode semiconductor detector is determined.

[0028] According to the specific embodiments provided in this application, this application discloses the following technical effects.

[0029] The present application provides an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array. Considering that each pixel-type multi-anode semiconductor detector has only one cathode, and the number of anodes is much greater than the cathode, the difficulty in solving the problem of increasing the number of detection units lies in the anode. Based on this, the present application is directed to a pixel-type multi-anode semiconductor detector including M anode pixels and 1 cathode. By selecting an anode pixel from each pixel-type multi-anode semiconductor detector, and connecting this group of anode pixels to the same anode electronic channel, the step of selecting the anode pixel to connect to the anode electronic channel is repeated until all anode pixels are connected to the anode electronic channel, so that only M anode electronic channels are required. Even if the number of pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array increases, the number of anode electronic channels required remains unchanged. Under the premise of ensuring that the detection efficiency and position resolution remain basically unchanged, the number of electronic channels required to read out all detection units is greatly reduced, thereby effectively reducing the complexity, power consumption and cost of the electronic system. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 A flowchart of an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array provided in one embodiment of the present application.

[0032] Figure 2 A schematic diagram of an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array provided in one embodiment of the present application.

[0033] Figure 3 A schematic diagram of a ray hitting a pixel-type multi-anode semiconductor detector array provided by an embodiment of the present application.

[0034] Figure 4 A schematic diagram of an electronic measurement provided in accordance with an embodiment of the present application.

[0035] Figure 5 This is a schematic structural diagram of a pixel-type cadmium zinc telluride detector provided in one embodiment of the present application.

[0036] Figure 6 A schematic diagram of the structure of a pixel-type cadmium zinc telluride detector array provided in one embodiment of the present application.

[0037] Figure 7 A schematic diagram of the structure of 4 cathode electronic channels and 100 anode electronic channels provided in one embodiment of the present application.

[0038] Figure 8 A schematic diagram of a situation where one cathode electronic channel and one anode electronic channel simultaneously collect signals according to an embodiment of the present application.

[0039] Fig. 9 A schematic diagram of a situation where one cathode electronic channel and two anode electronic channels simultaneously collect signals according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] like Figure 1 As shown, this embodiment proposes an electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array, and the semiconductor detector for this method is a pixel-type multi-anode semiconductor detector, which is a semiconductor detector with multiple pixel-type anodes, and the pixel-type anode is also an anode pixel. The electronic channel multiplexing method for a pixel-type multi-anode semiconductor detector array specifically includes the following steps.

[0042] Step S1: For N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array, one cathode of each pixel-type multi-anode semiconductor detector is read out using one cathode electronic channel to obtain N cathode electronic channels; each pixel-type multi-anode semiconductor detector includes M anode pixels and one cathode.

[0043] Step S2: For the M anode pixels of each pixel-type multi-anode semiconductor detector, select one anode pixel from a number of anode pixels in each pixel-type multi-anode semiconductor detector that have not yet been connected to the anode electronics channel to obtain N anode pixels, and number the N anode pixels as a group to obtain anode pixel numbering information, and merge the N anode pixels in the same group and read them out to one anode electronics channel.

[0044] Step S3: Repeat step S2 until all anode pixels of all pixel-type multi-anode semiconductor detectors are read out to corresponding anode electronic channels, thereby obtaining M anode electronic channels.

[0045] Step S4: screening cases based on the N cathode electronic channels and the M anode electronic channels, and inferring the specific position where the rays hit the pixel-type multi-anode semiconductor detector array based on the screened valid cases.

[0046] In this embodiment, before step S1, the following steps are also included.

[0047] The pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array are numbered in sequence to obtain the pixel-type multi-anode semiconductor detector numbering information. The method specifically includes the following steps.

[0048] The N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array are numbered in sequence from left to right and / or from top to bottom, so that each pixel-type multi-anode semiconductor detector corresponds to a number, and the pixel-type multi-anode semiconductor detector number information is obtained. The pixel-type multi-anode semiconductor detector number information is used to determine the specific position of a pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array.

[0049] In this embodiment, the numbering information of the pixel-type multi-anode semiconductor detectors is in the form of 1, 2, ..., N, where N is the number of the pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array.

[0050] In this embodiment, the anode pixel numbering information is in the form of: these N anode pixels are the i-th group, i=1, 2, ..., M. Wherein, M is the number of anode pixels in the pixel-type multi-anode semiconductor detector.

[0051] It should be noted that the numbering in this embodiment is for more convenient data processing and position identification, and therefore, various numbering methods and various specific numbering forms are possible. For example, when the distribution shape of the pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array is in the shape of a row, they can be numbered from left to right or from right to left. When the distribution shape of the pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array is in the shape of a column, they can be numbered from top to bottom or from bottom to top. When the distribution shape of the pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array is in the shape of multiple rows and columns, they can be numbered from left to right and from top to bottom.

[0052] In this embodiment, step S4 specifically includes the following steps.

[0053] Step S41 , screening cases according to the N cathode electronic channels and the M anode electronic channels, eliminating invalid cases and retaining valid cases.

[0054] Step S42: Based on the valid examples, infer the specific position where the rays hit the pixel-type multi-anode semiconductor detector array.

[0055] In this embodiment, step S41 performs case screening according to N cathode electronic channels and M anode electronic channels, removes invalid cases, and retains valid cases, which specifically includes the following steps.

[0056] Step S411, according to the N cathode electronic channels and the M anode electronic channels, respectively determine the signal collection conditions of each cathode electronic channel and each anode electronic channel when the rays hit the pixel-type multi-anode semiconductor detector array.

[0057] Step S412: According to the signal collection conditions of each cathode electronic channel and each anode electronic channel, invalid cases where multiple cathode electronic channels collect signals at the same time are eliminated to obtain valid cases.

[0058] In this embodiment, an invalid event is an event in which multiple cathode electronic channels simultaneously collect signals after the rays hit the pixel-type multi-anode semiconductor detector array. A valid event is all events except the invalid event. An event means that at a certain moment, the electronic channel measures a signal, which is considered to be an event. At the same time, all signals measured at this moment belong to the same event.

[0059] In this embodiment, step S42 infers the specific position where the rays hit the pixel-type multi-anode semiconductor detector array based on the effective case, and specifically includes the following steps.

[0060] Step S421, based on the signal collection conditions of each cathode electronic channel in the valid case and combined with the pixel type multi-anode semiconductor detector number information, determine the pixel type multi-anode semiconductor detector that has been hit in the pixel type multi-anode semiconductor detector array, that is, determine which pixel type multi-anode semiconductor detector in the pixel type multi-anode semiconductor detector array has been hit.

[0061] Step S422, according to the signal collection situation of the anode electronics channel and in combination with the anode pixel number information of the hit pixel-type multi-anode semiconductor detector, determine the specific position of the hit anode pixel in the hit pixel-type multi-anode semiconductor detector.

[0062] like Figure 2 As shown, the electronic channel multiplexing method of a pixel-type multi-anode semiconductor detector array proposed in this embodiment mainly includes the following implementation steps in practical application.

[0063] (1) N pixel-type multi-anode semiconductor detectors are numbered. For example, the numbering may be 1, 2, ..., N. Each pixel-type multi-anode semiconductor detector includes M anode pixels and 1 cathode.

[0064] (2) The cathode of each pixel-type multi-anode semiconductor detector is read out using a cathode electronics channel, that is, a total of N cathode electronics channels are required.

[0065] (3) Select one anode pixel from each anode pixel of each pixel-type multi-anode semiconductor detector that has not been connected to the anode electronics channel, and number these N anode pixels as the i-th group, i=1, 2, ..., M, and merge and read out to one anode electronics channel. Repeat the process of "select one anode pixel from each anode pixel of each pixel-type multi-anode semiconductor detector that has not been connected to the anode electronics channel, and number these N anode pixels as the i-th group, i=1, 2, ..., M, and merge and read out to one anode electronics channel" until all anode pixels are read out to the anode electronics channel, and a total of M anode electronics channels are required.

[0066] It should be noted that the above (2) and (3) do not distinguish the order of execution, that is, N cathode electronic channels can be determined first, and then M anode electronic channels can be determined, or M anode electronic channels can be determined first, and then N cathode electronic channels can be determined.

[0067] After analysis, it can be known that when M and N are determined, using M anode electronic channels and N cathode electronic channels can realize the readout of (M×N) anode detection units, which greatly improves the integration of front-end readout electronics. For example, when M=100 and N=16, only 100 anode electronic channels can realize the readout of 1,600 detector anode detection units, and 16 cathode electronic channels are added, so only 116 electronic channels are needed to realize the readout of all detector detection units.

[0068] (4) Based on electronic measurement technology, determine the signal generated by each anode electronic channel and cathode electronic channel, and eliminate cases where multiple cathode electronic channels measure signals at the same time.

[0069] In this embodiment, the electronic measurement process is as follows: Figure 3 As shown, the rays hit the pixel-type multi-anode semiconductor detector, and the cathode and anode of the hit pixel-type multi-anode semiconductor detector generate current signals, such as Figure 4 As shown, the current signal is input into the amplifier, and the current signal is converted into a voltage signal by the amplifier. Then, the voltage signal is sampled by ADC (Analog to Digital Converter) and converted into a digital signal. Then, the digital signal is input into the digital signal processing unit for data acquisition and data packaging. After data acquisition and packaging, the signal of the electronic channel forms a data packet. Each data packet contains the case number, the electronic channel number and the data information of the channel. The case number reflects the number of the case. Finally, the data packet is uploaded to the computer and data processing is performed in the computer. Therefore, this embodiment can use the above-mentioned electronic measurement technology and electronic measurement system to use the abnormal information transmitted in the electronic channel displayed by the computer to determine whether to eliminate each case, so as to achieve the screening and elimination of the case. Alternatively, an event screening module is added to the digital signal processing unit, and the event screening module is used to discard the cases that hit more than two pixel-type multi-anode semiconductor detectors by acquiring data online in real time. After a data packet is unpacked, it becomes a row of data, one column is the case number, and one column is the channel number. All data with case number n are screened out for judgment. If there are two or more cathode channel signals under a certain case number, this case will be eliminated.

[0070] In this embodiment, the signal collection conditions of the cathode electronics channel specifically include the following conditions.

[0071] 1) The impact positions of the rays are all located on a pixel-type multi-anode semiconductor detector. The cathode of the pixel-type multi-anode semiconductor detector generates a signal, and the corresponding cathode electronic channel collects the signal.

[0072] 2) The rays hit multiple pixel-type multi-anode semiconductor detectors, and the corresponding multi-channel cathode electronic channels collect signals simultaneously.

[0073] In this embodiment, the signal collection conditions of the anode electronics channel specifically include the following conditions.

[0074] 1) In the hit pixel-type multi-anode semiconductor detector, only one anode detection unit is hit, and the corresponding anode electronic channel collects the signal.

[0075] 2) In the hit pixel-type multi-anode semiconductor detector, multiple adjacent anode detection units are hit, and the corresponding multi-channel anode electronic channels collect signals simultaneously.

[0076] According to the above analysis, the rays may hit multiple pixel-type multi-anode semiconductor detectors at the same time, so that the corresponding multiple cathode electronic channels can collect signals. For example, when rays simultaneously hit anode detection units q1, q2 (q1, q2=1, 2, ..., M) with different numbers on two pixel-type multi-anode semiconductor detectors p1, p2 (p1, p2=1, 2, ..., N), the p1, p2 cathode electronic channels and the q1, q2 anode electronic channels simultaneously collect signals, and it is impossible to determine which two of the four anode detection units (p1, q1), (p1, q2), (p2, q1), and (p2, q2) the rays hit, where (p1, q1) represents the anode detection unit numbered q1 in the p1 detector; (p1, q2) represents the anode detection unit numbered q2 in the p1 detector; (p2, q1) represents the anode detection unit numbered q1 in the p2 detector; (p2, q2) represents the anode detection unit numbered q2 in the p2 detector. Since the probability of occurrence of such cases is very small, this embodiment eliminates such cases without causing a significant impact on detection. According to the principle of ray action, the cases of interest in measurement are cases where all ray energy is converted into electrical signals in a pixel-type multi-anode semiconductor detector. Finally, only cases where a pixel-type multi-anode semiconductor detector is hit once, and cases where multiple pixel-type multi-anode semiconductor detectors are hit at the same time will be discarded. For cases where a pixel-type multi-anode semiconductor detector is hit once, no matter how many anode pixels in a pixel-type multi-anode semiconductor detector are hit once, they will be retained as valid cases.

[0077] (5) Based on valid events, infer the position where the rays hit the pixel-type multi-anode semiconductor detector.

[0078] In this embodiment, since the pixel-type multi-anode semiconductor detectors and anode pixels are numbered in sequence in advance, the pixel-type multi-anode semiconductor detector numbering information and the anode pixel numbering information are obtained. Therefore, after obtaining the effective case, the present embodiment first determines the pixel-type multi-anode semiconductor detector that is hit according to the signal collection conditions of each cathode electronic channel in the effective case and the pixel-type multi-anode semiconductor detector numbering information, that is, finds out which pixel-type multi-anode semiconductor detector is hit from all pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array. Then, according to the signal collection conditions of the anode electronic channel of the hit pixel-type multi-anode semiconductor detector and the anode pixel numbering information, the specific position of the hit anode pixel in the hit pixel-type multi-anode semiconductor detector is determined, that is, among all the anode pixels in the hit pixel-type multi-anode semiconductor detector, it is further determined which anode pixel or pixels are hit.

[0079] For example, when the pth cathode electronic channel and the q1, q2th anode electronic channels collect signals at the same time, it can be determined that the rays hit the two anode pixels numbered q1 and q2 in the pth pixel-type multi-anode semiconductor detector, that is, the anode detection unit, where p=1, 2,…, N; q1=1, 2,…, M; q2=1, 2,…, M.

[0080] In this embodiment, since the number of each anode pixel reflects its two-dimensional geometric position in the entire detection device, once the anode pixel hit by the radiation and its number are determined, the specific position where the radiation interacts with the pixel-type multi-anode semiconductor detector is also determined, and the radiation source can be imaged, which has wide applications in the field of radiation detection.

[0081] In order to make the implementation process of the technical solution of the present application clearer, a pixel-type cadmium zinc telluride detector is used as an example for illustration below.

[0082] In this embodiment, the pixel-type multi-anode semiconductor detector may be a pixel-type cadmium zinc telluride (CZT) detector, or may be other pixel-type multi-anode semiconductor detectors.

[0083] In this embodiment, the pixel-type multi-anode semiconductor detector array may have 4 pixel-type cadmium zinc telluride detectors, and each pixel-type cadmium zinc telluride detector may include 100 anode pixels and 1 cathode.

[0084] This embodiment uses a pixel-type cadmium zinc telluride detector, such as Figure 5 As shown in FIG. 1 , a single pixel-type CdZnTe detector is composed of 100 anode pixels (i.e., M=100) and 1 cathode. Figure 6 As shown, the pixel-type multi-anode semiconductor detector array of the entire detection device is a pixel-type CdZnTe detector array structure composed of 4 pixel-type CdZnTe detectors (i.e., N=4). The electron-hole pairs generated by each pixel-type CdZnTe detector after being hit by radiation are collected by the anode pixel and cathode corresponding to the hit position, and each anode pixel or cathode is a detection unit. In this embodiment, the 4 pixel-type CdZnTe detectors are numbered 1, 2, 3, and 4 in order from left to right and from top to bottom, as shown in FIG. Figure 6 shown.

[0085] like Figure 7 As shown, in this embodiment, the cathode of each pixel-type CdZnTe detector is read out to the corresponding cathode electronic channel, and a total of 4 cathode electronic channels are required. The 100 anode pixels on each pixel-type CdZnTe detector are selected in sequence from left to right and from top to bottom, and 1 anode pixel is selected each time. The 4 anode pixels on the 4 pixel-type CdZnTe detectors selected each time are recorded as a group, numbered as the i-th group, and combined and read out to one anode electronic channel, where i=1, 2, ..., 100, and a total of 100 anode electronic channels are required.

[0086] In this embodiment, since the ray will usually hit only one pixel-type CdZnTe detector, the probability of hitting multiple pixel-type CdZnTe detectors at the same time is very low. At the same time, such cases have little impact on ray detection and can be directly discarded, that is, if there is an event that causes multiple cathode electronics channels to collect signals at the same time, this event is discarded, thereby ensuring that the remaining events are all valid events.

[0087] In this embodiment, depending on the location of the rays hitting and the energy of the generated electron-hole pairs, one anode pixel of the pixel-type CdZnTe detector array may be hit or several adjacent anode pixels may be hit. Based on the signal collection situation measured by the electronic channel, the number of the pixel-type CdZnTe detector actually hit and the anode pixel hit can be quickly inferred. Figure 8 As shown in the figure, when only one cathode electronic channel and one anode electronic channel collect signals, which are recorded as p and q respectively, it means that the anode pixel numbered q in the p-th pixel-type CdZnTe detector is hit, where p=1, 2, 3, 4, q=1, 2, ..., 100. Fig. 9As shown in the figure, when only one cathode electronic channel (denoted as p) collects signals, and two anode electronic channels (denoted as q1, q2 and q1, q2=1, 2, ..., 100) collect signals at the same time, it means that the two anode pixels numbered q1 and q2 in the p-th pixel-type CdZnTe detector are hit at the same time. When multiple cathode electronic channels collect signals at the same time, the invalid case is discarded.

[0088] The existing ray detection device based on pixel-type multi-anode semiconductor detector mainly increases the number of detectors to increase the detection area and achieve high detection efficiency; by reducing the anode pixel size of each detector, the position measurement is more accurate and high position resolution is achieved. This will greatly increase the number of anode detection units. Since each pixel-type multi-anode semiconductor detector has only one cathode, and the number of anodes is far greater than the cathode, the difficulty in solving the problem of increasing the number of detection units lies in the anode. Assume that the ray detection device based on pixel-type multi-anode semiconductor detector includes N pixel-type multi-anode semiconductor detectors, and each pixel-type multi-anode semiconductor detector has M anode pixels. Generally, each anode pixel requires an electronic channel to read out separately, and a total of M×N anode electronic channels are required.

[0089] This embodiment selects an anode from each pixel-type multi-anode semiconductor detector to connect to the same anode electronic channel, and only M anode electronic channels are needed, realizing the transition from M×N anode electronic channels for readout to only M anode electronic channels for readout, effectively reducing the number of electronic channels. Therefore, even if the number of pixel-type multi-anode semiconductor detectors increases, the number of anode electronic channels required remains unchanged, which does not depend on the number of pixel-type multi-anode semiconductor detectors, but depends on the number of anode pixels in a single pixel-type multi-anode semiconductor detector. Therefore, the increase in the number of pixel-type multi-anode semiconductor detectors will not affect the number of anode electronic channels, and the anode pixel size of the detector can be effectively reduced. The number of anode electronic channels required in this embodiment is only 1 / N of that of the conventional readout method, which can greatly reduce the number of electronic channels required for reading out all detection units while keeping the detection efficiency and position resolution basically unchanged, thereby reducing the complexity of the electronic system, power consumption and cost.

[0090] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications made within the spirit and principles of the present invention, including changes to the type, quantity or array structure of the detectors, or non-creative changes to the numbering method, as well as equivalent replacements, improvements, etc., should be included in the protection scope of the present invention.

[0091] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0092] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and core ideas of this application. At the same time, for those skilled in the art, according to the ideas of this application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A method for multiplexing electronic channels of a pixel-type multi-anode semiconductor detector array, characterized in that: The following steps are involved: Step S1: for N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array, one cathode of each pixel-type multi-anode semiconductor detector is read out using one cathode electronic channel to obtain N cathode electronic channels; each pixel-type multi-anode semiconductor detector includes M anode pixels and one cathode; Step S2: for each of the M anode pixels of the pixel-type multi-anode semiconductor detector, one anode pixel is selected from a plurality of anode pixels in each of the pixel-type multi-anode semiconductor detectors that have not yet been connected to the anode electronics channel to obtain N anode pixels, and the N anode pixels are numbered as a group to obtain anode pixel numbering information, and the N anode pixels in the same group are combined and read out to one anode electronics channel; Step S3: Repeat step S2 until all anode pixels of all pixel-type multi-anode semiconductor detectors are read out to corresponding anode electronic channels, thereby obtaining M anode electronic channels; Step S4: screening cases according to the N cathode electronic channels and the M anode electronic channels, and inferring the specific position where the rays hit the pixel-type multi-anode semiconductor detector array according to the screened valid cases; Step S4 specifically includes the following steps: Screening cases according to N cathode electronic channels and M anode electronic channels, eliminating invalid cases and retaining valid cases; Based on the effective cases, the specific position where the rays hit the pixel-type multi-anode semiconductor detector array is inferred; Screening cases according to N cathode electronic channels and M anode electronic channels, eliminating invalid cases and retaining valid cases, specifically includes the following steps: According to N cathode electronic channels and M anode electronic channels, the signal collection conditions of each cathode electronic channel and each anode electronic channel are respectively determined when the rays hit the pixel-type multi-anode semiconductor detector array; According to the signal collection conditions of each cathode electronic channel and each anode electronic channel, invalid cases where multiple cathode electronic channels collect signals at the same time are eliminated to obtain valid cases; According to the effective examples, the specific position where the rays hit the pixel-type multi-anode semiconductor detector array is inferred, which specifically includes the following steps: According to the signal collection conditions of each cathode electronics channel in the effective case, combined with the number information of the pixel-type multi-anode semiconductor detector, the pixel-type multi-anode semiconductor detector that is hit in the pixel-type multi-anode semiconductor detector array is determined; According to the signal collection situation of the anode electronics channel and the anode pixel number information of the hit pixel-type multi-anode semiconductor detector, the specific position of the hit anode pixel in the hit pixel-type multi-anode semiconductor detector is determined.

2. The electronic channel multiplexing method of the pixel-type multi-anode semiconductor detector array according to claim 1, characterized in that: Before step S1, the method further includes the following steps: Each pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array is numbered in sequence to obtain pixel-type multi-anode semiconductor detector numbering information; the pixel-type multi-anode semiconductor detector numbering information is used to determine the specific position of a pixel-type multi-anode semiconductor detector in the pixel-type multi-anode semiconductor detector array.

3. The electronic channel multiplexing method of the pixel-type multi-anode semiconductor detector array according to claim 2, characterized in that: The pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array are numbered in sequence to obtain the numbering information of the pixel-type multi-anode semiconductor detectors, which specifically includes the following steps: The N pixel-type multi-anode semiconductor detectors in the pixel-type multi-anode semiconductor detector array are numbered in sequence so that each pixel-type multi-anode semiconductor detector corresponds to a number, thereby obtaining the pixel-type multi-anode semiconductor detector numbering information.

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