An etching device for sensor single-crystalline silicon
By designing an etching device with a rotating seat, movable bar and limiting ring, the problem of low placement and removal of single crystal silicon wafers in existing equipment is solved, and fast operation and efficient reaction are achieved.
Patent Information
- Application Number
- CN202411352502.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-26
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2044-09-26
AI Technical Summary
When processing single crystal silicon wafers, existing etching equipment needs to be placed and removed one by one, resulting in inefficient work.
An etching device for sensor single crystal silicon is designed, using structures such as rotating seats, movable strips and limit rings, allowing the single crystal silicon wafer to be quickly placed and removed, and improving working efficiency.
Through the design of this device, users can quickly place and remove single crystal silicon wafers, which significantly improves working efficiency, and improves the reaction efficiency of single crystal silicon wafers through the improvement of gas contact efficiency.
Smart Images

Figure CN119230461B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of etching equipment, and particularly to an etching equipment for sensor single-crystalline silicon. Background Technique
[0002] Etching is a quite important step in semiconductor manufacturing processes, microelectronic IC manufacturing processes, and micro-nano manufacturing processes. It is a main process for patterning associated with lithography. So-called etching, actually in a narrow sense, it is lithography corrosion. First, the photoresist is subjected to photolithographic exposure through lithography, and then the corrosion treatment is achieved by other means to remove the part that needs to be removed. Etching is a process of selectively removing unnecessary materials from the surface of a silicon wafer by chemical or physical methods. Its basic goal is to correctly replicate the mask pattern on the silicon wafer coated with photoresist. With the development of microfabrication processes, generally speaking, etching has become a general term for stripping and removing materials through solutions, reactive ions, or other mechanical means, and has become a general term for microfabrication. When the etching equipment processes single-crystalline silicon wafers, it needs to be carried out in a reaction chamber. In order to improve efficiency, multiple single-crystalline silicon wafers are mostly processed simultaneously. However, when placing and taking out single-crystalline silicon wafers, they need to be carried out one by one, which will affect the work efficiency. Summary of the Invention
[0003] (1) Technical Problems to be Solved
[0004] Aiming at the deficiencies of the prior art, the present invention provides an etching equipment for sensor single-crystalline silicon, which has the advantages of facilitating users to quickly place and take out single-crystalline silicon wafers, thereby improving work efficiency, etc., and solves the problem that when the etching equipment processes single-crystalline silicon wafers, it needs to be carried out in a reaction chamber. In order to improve efficiency, multiple single-crystalline silicon wafers are mostly processed simultaneously. However, when placing and taking out single-crystalline silicon wafers, they need to be carried out one by one, which will affect the work efficiency.
[0005] (2) Technical Solutions
[0006] To achieve the above object of facilitating the user to quickly place and remove single-crystal silicon wafers, thereby improving work efficiency, the present invention provides the following technical solution: An etching device for single-crystal silicon of a sensor, including a base. An airtight chamber is provided on the upper side of the base. An intake pipe and an exhaust pipe are fixedly connected to the upper wall of the airtight chamber. A rotating base is provided on the base. A vertical bar is provided on the rotating base. A plurality of square plates are fixedly installed on the vertical bar. A support plate is fixedly installed on the upper side of each square plate. A circular groove a is opened on each support plate. A notch a is opened on the side wall of each circular groove a. An active bar is provided above the rotating base. A plurality of connecting bars are fixedly installed on the active bar. A circular plate is fixedly installed on each connecting bar. A limiting ring is fixedly installed on the upper side of each connecting bar. By placing the single-crystal silicon wafer to be processed on each circular plate, then inserting each circular plate above each support plate, and then moving the circular plate and the limiting ring downward, the single-crystal silicon wafer can be placed on the support plate. At the same time, the limiting ring can be sleeved on the corresponding support plate. Then rotate and move the active bar, so that the airtight chamber can be closed. When the reaction of the single-crystal silicon wafer is completed, the airtight chamber can be opened and then the active bar is rotated to drive the connecting bar to move to the notch a, and then the active bar can be moved upward to take out the single-crystal silicon wafer, thereby facilitating the user to quickly place and remove the single-crystal silicon wafer, and improving work efficiency.
[0007] Preferably, a connecting groove is opened on the upper side of the rotating base. A circular block is movably connected in the connecting groove. Two clamping grooves are opened on the circular block. A clamping block is movably connected in each clamping groove. Both clamping blocks are fixedly connected to the connecting groove. The connecting groove facilitates the user to place the circular block. At the same time, the circular block can rotate and move with the rotating base through the clamping groove and the clamping block. At the same time, it is convenient for the user to disassemble and install the circular block, so that it is convenient for the user to replace the circular block.
[0008] Preferably, an arc-shaped groove is opened on the upper side of the circular block. The active bar is movably connected to the arc-shaped groove. Two fixing blocks are fixedly installed on the upper side of the circular block. A trapezoidal block is fixedly installed on each fixing block. The trapezoidal block facilitates the user to conduct guiding, so that the user can accurately align each connecting bar with each notch a, thereby facilitating the user to place the single-crystal silicon wafer on the support plate, and improving the practicability of the device.
[0009] Preferably, a plurality of square tubes are fixedly penetrated through the active bar. A square box is fixedly sleeved on each square tube. Each square box has no box wall in the same direction.
[0010] Preferably, each of the circular plates is provided with a circular groove b, each side wall of the circular groove b is provided with a notch b, each limiting ring is provided with a notch, and the square box can rotate with the rotating seat, so that the gas in the cabin can be squeezed into the square pipe, so that the gas can be blown onto the single crystal silicon wafer, which can improve the contact efficiency between the gas and the single crystal silicon wafer, thereby improving the reaction efficiency of the single crystal silicon wafer. At the same time, through the circular groove b, the notch b and the notch, it is convenient for the user to place the single crystal silicon wafer on the circular plate or remove the single crystal silicon wafer from the circular plate.
[0011] Preferably, an annular groove a is provided on the lower wall of the cabin, a heat conduction pipe is movably connected in the annular groove a, a spiral groove is provided on the heat conduction pipe, a vertical pipe is fixedly penetrated through the heat conduction pipe, the vertical pipe is communicated with the spiral groove, a water inlet pipe is movably sleeved on the vertical pipe, a fixing groove is provided on the cabin, the water inlet pipe is fixedly installed in the fixing groove, and a water outlet pipe is fixedly penetrated through the heat conduction pipe, and the water outlet pipe is communicated with the spiral groove.
[0012] Preferably, a connecting ring is provided on the lower side of the cabin, a groove is provided on the upper side of the connecting ring, the heat conduction pipe is fixedly connected with the groove, an arc-shaped strip a is fixedly installed on the connecting ring, and an arc-shaped strip b is fixedly installed on the cabin.
[0013] Preferably, two positioning blocks are fixedly installed on the connecting ring, two square blocks are fixedly installed on the cabin, positioning grooves are provided on the lower sides of the two square blocks, the two positioning blocks are respectively movably connected with the two positioning grooves, a sealing ring is attached to the upper side of the vertical pipe, a small ring is fixedly installed on the upper side of the sealing ring, and the small ring is fixedly connected with the water inlet pipe. By injecting coolant into the water inlet pipe, the coolant can pass through the spiral groove to cool the cabin, so as to avoid the temperature of the single crystal silicon wafer being too high during the reaction, which affects the quality of the single crystal silicon wafer, and thus improve the quality of the single crystal silicon wafer. By fixedly connecting the arc-shaped strip a and the arc-shaped strip b through fixing parts, the connecting ring and the cabin can be fixedly connected. At the same time, through the two positioning grooves and the two positioning blocks, it is convenient for the user to position, so that the vertical pipe can be accurately inserted into the water inlet pipe when installing the heat conduction pipe.
[0014] (III) Beneficial effects
[0015] Compared with the prior art, the present invention provides an etching device for a sensor single crystal silicon, which has the following beneficial effects:
[0016] 1. The etching equipment for the single-crystalline silicon of this sensor places the single-crystalline silicon wafers to be processed on each circular plate, then inserts each circular plate above each pallet. Next, the circular plate and the limit ring can be moved downward, so that the single-crystalline silicon wafers can be placed on the pallets. At the same time, the limit ring can be sleeved on the corresponding pallets. Then, the movable bar is rotated and moved, and the cabin can be closed in this way. When the reaction of the single-crystalline silicon wafers is completed, the cabin can be opened, and then the movable bar is rotated to drive the connecting bar to move to notch a, and then the movable bar can be moved upward to take out the single-crystalline silicon wafers, which can facilitate users to quickly place and take out the single-crystalline silicon wafers, thus improving work efficiency.
[0017] 2. The etching equipment for the single-crystalline silicon of this sensor can facilitate users to place the round blocks through the connecting grooves. At the same time, through the card slots and the blocks, the round blocks can rotate and move together with the rotating base, and it is also convenient for users to disassemble and install the round blocks, so that users can replace the round blocks conveniently.
[0018] 3. The etching equipment for the single-crystalline silicon of this sensor can facilitate users to conduct guiding through the trapezoidal blocks, so that users can accurately align each connecting bar with each notch a, thus facilitating users to place the single-crystalline silicon wafers on the pallets, and improving the practicality of the device.
[0019] 4. The etching equipment for the single-crystalline silicon of this sensor can rotate along with the rotating base through the square box, so that the gas in the cabin can be squeezed into the square tube, and then the gas can be blown onto the single-crystalline silicon wafers, which can improve the contact efficiency between the gas and the single-crystalline silicon wafers, thus improving the reaction efficiency of the single-crystalline silicon wafers. At the same time, through the circular groove b, notch b and the gap, it is convenient for users to place the single-crystalline silicon wafers on the circular plate or take the single-crystalline silicon wafers off the circular plate.
[0020] 5. The etching equipment for the single-crystalline silicon of this sensor injects coolant into the water inlet pipe, so that the coolant can pass through the spiral groove to cool the cabin, thus avoiding the excessive temperature of the single-crystalline silicon wafers during the reaction from affecting the quality of the single-crystalline silicon wafers, and improving the quality of the single-crystalline silicon wafers.
[0021] 6. The etching equipment for the single-crystalline silicon of this sensor fixes and connects the arc-shaped strip a and the arc-shaped strip b through the fixing parts, so that the connecting ring and the cabin can be fixedly connected. At the same time, through the two positioning grooves and the two positioning blocks, it is convenient for users to conduct positioning, so that the vertical pipe can be accurately inserted into the water inlet pipe when installing the heat conduction pipe. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 is the front three-dimensional structure schematic diagram of the present invention;
[0023] Figure 2 is the present invention Figure 1 the three-dimensional structure schematic diagram of the base in;
[0024] Figure 3 For the present invention Figure 2 is a schematic three-dimensional structure diagram of the rotating seat in the present invention;
[0025] Figure 4 For the present invention Figure 2 is a schematic three-dimensional structure diagram of the movable bar in the present invention;
[0026] Figure 5 For the present invention Figure 2 is a schematic three-dimensional structure diagram of the support plate in the present invention;
[0027] Figure 6 For the present invention Figure 2 is a schematic three-dimensional structure diagram of the vertical bar in the present invention;
[0028] Figure 7 For the present invention Figure 1 is a schematic sectional three-dimensional structure diagram of the cabin in the present invention;
[0029] Figure 8 For the present invention Figure 7 is a schematic enlarged partial structure diagram at position A in the present invention.
[0030] In the figure: 1, base; 2, arc bar b; 3, arc bar a; 4, cabin; 5, air outlet pipe; 6, air inlet pipe; 7, water inlet pipe; 8, square block; 9, positioning groove; 10, positioning block; 11, connecting ring; 12, groove; 13, heat conduction pipe; 14, annular groove a; 15, spiral groove; 16, fixing groove; 17, vertical pipe; 18, square plate; 19, sealing ring; 20, small ring; 21, vertical bar; 22, rotating seat; 23, clamping block; 24, round block; 25, trapezoidal block; 26, fixing block; 27, arc groove; 28, square box; 29, movable bar; 30, support plate; 31, clamping groove; 32, connecting groove; 33, round plate; 34, square pipe; 35, connecting bar; 36, round groove a; 37, notch a; 38, notch b; 39, notch; 40, limiting ring; 41, round groove b; 42, water outlet pipe. Detailed implementation manners
[0031] The present invention will be further described in detail below with reference to the accompanying drawings, where the same components are denoted by the same reference numerals. It should be noted that the terms "front", "rear", "left", "right", "upper" and "lower", "bottom surface" and "top surface" used in the following description refer to the directions in the drawings, and the terms "inner" and "outer" respectively refer to the directions towards or away from the geometric center of a specific component.
[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0033] Please refer to Figures 1 - 8, the present invention provides a technical solution: an etching device for sensor single-crystalline silicon, including a base 1. Above the base 1, there is a cabin 4. On the upper wall of the cabin 4, an intake pipe 6 and an exhaust pipe 5 are fixedly connected. On the base 1, there is a rotating seat 22. On the rotating seat 22, there are vertical bars 21. On the vertical bars 21, a number of square plates 18 are fixedly installed. On the upper side of each square plate 18, a support plate 30 is fixedly installed. On each support plate 30, a circular groove a36 is opened. On the side wall of each circular groove a36, a notch a37 is opened. Above the rotating seat 22, there is a movable bar 29. On the movable bar 29, a number of connecting bars 35 are fixedly installed. On each connecting bar 35, a circular plate 33 is fixedly installed. On the upper side of each connecting bar 35, a limiting ring 40 is fixedly installed. By placing the single-crystalline silicon wafer to be processed on each circular plate 33, then inserting each circular plate 33 above each support plate 30, and then the circular plate 33 and the limiting ring 40 can be moved downward, so that the single-crystalline silicon wafer can be placed on the support plate 30. At the same time, the limiting ring 40 can be sleeved on the corresponding support plate 30. Then rotate and move the movable bar 29, so that the cabin 4 can be closed. When the reaction of the single-crystalline silicon wafer is completed, the cabin 4 can be opened and then the movable bar 29 is rotated to drive the connecting bar 35 to move to the notch a37, and then the movable bar 29 can be moved upward to take out the single-crystalline silicon wafer, which can facilitate the user to quickly place and take out the single-crystalline silicon wafer, thereby improving work efficiency. On the upper side of the rotating seat 22, a connecting groove 32 is opened. In the connecting groove 32, a circular block 24 is movably connected. On the circular block 24, two clamping grooves 31 are opened. In each clamping groove 31, a clamping block 23 is movably connected. The two clamping blocks 23 are both fixedly connected to the connecting groove 32. Through the connecting groove 32, it is convenient for the user to place the circular block 24. At the same time, through the clamping groove 31 and the clamping block 23, the circular block 24 can rotate and move together with the rotating seat 22, and at the same time, it is convenient for the user to disassemble and install the circular block 24, so that it is convenient for the user to replace the circular block 24. On the upper side of the circular block 24, an arc-shaped groove 27 is opened. The movable bar 29 is movably connected to the arc-shaped groove 27. On the upper side of the circular block 24, two fixing blocks 26 are fixedly installed. On each of the two fixing blocks 26, a trapezoidal block 25 is fixedly installed. Through the trapezoidal block 25, it is convenient for the user to guide, so that the user can accurately align each connecting bar 35 with each notch a37, thereby facilitating the user to place the single-crystalline silicon wafer on the support plate 30, which can improve the practicability of the device. A number of square tubes 34 are fixedly penetrated through the movable bar 29. On each square tube 34, a square box 28 is fixedly sleeved. On each square box 28, there is no box wall in the same direction. On each circular plate 33, a circular groove b41 is opened. On the side wall of each circular groove b41, a notch b38 is opened. On each limiting ring 40, a notch 39 is opened. Through the square box 28, it can rotate with the rotating seat 22, so that the gas in the cabin 4 can be squeezed into the square tube 34, so that the gas can be blown onto the single-crystalline silicon wafer, which can improve the contact efficiency between the gas and the single-crystalline silicon wafer, thereby improving the reaction efficiency of the single-crystalline silicon wafer.Meanwhile, through the circular groove b41, the notch b38 and the notch 39, it is convenient for users to place the single crystal silicon wafer on the circular plate 33 or remove the single crystal silicon wafer from the circular plate 33. An annular groove a14 is provided on the lower wall of the cabin body 4. A heat conduction tube 13 is movably connected in the annular groove a14. A spiral groove 15 is provided on the heat conduction tube 13. A vertical tube 17 is fixedly penetrated through the heat conduction tube 13. The vertical tube 17 communicates with the spiral groove 15. A water inlet pipe 7 is movably sleeved on the vertical tube 17. A fixed groove 16 is provided on the cabin body 4. The water inlet pipe 7 is fixedly installed in the fixed groove 16. A water outlet pipe 42 is fixedly penetrated through the heat conduction tube 13. The water outlet pipe 42 communicates with the spiral groove 15. By injecting coolant into the water inlet pipe 7, the coolant can pass through the spiral groove 15 to cool the cabin body 4, thereby avoiding the influence of excessive temperature on the quality of the single crystal silicon wafer during the reaction, improving the quality of the single crystal silicon wafer. A connecting ring 11 is provided on the lower side of the cabin body 4. A groove 12 is provided on the upper side of the connecting ring 11. The heat conduction tube 13 is fixedly connected with the groove 12. An arc-shaped strip a3 is fixedly installed on the connecting ring 11. An arc-shaped strip b2 is fixedly installed on the cabin body 4. Two positioning blocks 10 are fixedly installed on the connecting ring 11. Two square blocks 8 are fixedly installed on the cabin body 4. Positioning grooves 9 are provided on the lower sides of the two square blocks 8. The two positioning blocks 10 are respectively movably connected with the two positioning grooves 9. A sealing ring 19 is attached to the upper side of the vertical tube 17. A small ring 20 is fixedly installed on the upper side of the sealing ring 19. The small ring 20 is fixedly connected with the water inlet pipe 7. By fixing the arc-shaped strip a3 and the arc-shaped strip b2 through a fixing member, the connecting ring 11 can be fixedly connected with the cabin body 4. At the same time, through the two positioning grooves 9 and the two positioning blocks 10, it is convenient for users to position, so that the vertical tube 17 can be accurately inserted into the water inlet pipe 7 when installing the heat conduction tube 13.,
[0034] During use, the first step: Place the single crystal silicon wafer to be processed on each circular plate 33, then insert each circular plate 33 above each pallet 30, and then the circular plate 33 and the limiting ring 40 can be moved downward, so that the single crystal silicon wafer can be placed on the pallet 30. At the same time, the limiting ring 40 can be sleeved on the corresponding pallet 30. Then rotate and move the movable bar 29, so that the cabin body 4 can be closed. After the reaction of the single crystal silicon wafer is completed, the cabin body 4 can be opened, then rotate the movable bar 29 to drive the connecting bar 35 to move to the notch a37, and then the movable bar 29 can be moved upward to take out the single crystal silicon wafer, which is convenient for users to quickly place and take out the single crystal silicon wafer, improving work efficiency.
[0035] The second step: Through the connecting groove 32, it is convenient for users to place the round block 24. At the same time, through the clamping groove 31 and the clamping block 23, the round block 24 can rotate and move together with the rotating seat 22, and it is convenient for users to disassemble and install the round block 24, so that it is convenient for users to replace the round block 24.
[0036] Step 3: The trapezoidal block 25 facilitates user guidance, enabling the user to accurately align each connecting bar 35 with each notch a37. This allows the user to conveniently place the single-crystal silicon wafer on the pallet 30, thereby enhancing the practicality of the device.
[0037] Step 4: The square box 28 can rotate with the rotating base 22, squeezing the gas in the cabin 4 into the square tube 34. This causes the gas to blow onto the single-crystal silicon wafer, improving the contact efficiency between the gas and the single-crystal silicon wafer, and thus enhancing the reaction efficiency of the single-crystal silicon wafer. Meanwhile, the circular groove b41, notch b38, and gap 39 facilitate the user to place or remove the single-crystal silicon wafer from the circular plate 33.
[0038] Step 5: By injecting coolant into the water inlet pipe 7, the coolant can pass through the spiral groove 15 to cool the cabin 4, preventing the single-crystal silicon wafer from being affected by excessive temperature during the reaction and thus improving the quality of the single-crystal silicon wafer.
[0039] Step 6: By fixedly connecting the arc-shaped bar a3 and the arc-shaped bar b2 with a fixing member, the connecting ring 11 can be fixedly connected to the cabin 4. Meanwhile, the two positioning grooves 9 and the two positioning blocks 10 facilitate user positioning, enabling the vertical pipe 17 to accurately insert into the water inlet pipe 7 when installing the heat conduction pipe 13.
[0040] Although the embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A sensor single crystal silicon etching device, comprising a base (1), a chamber (4) is arranged on the upper side of the base (1), an air inlet pipe (6) and an air outlet pipe (5) are fixedly connected to the upper wall of the chamber (4), characterized in that: The base (1) is provided with a rotating seat (22), the rotating seat (22) is provided with a vertical bar (21), a plurality of square plates (18) are fixedly mounted on the vertical bar (21), a support plate (30) is fixedly mounted on the upper side of each square plate (18), a circular groove a (36) is provided on each support plate (30), a notch a (37) is provided on the side wall of each circular groove a (36), a movable bar (29) is provided above the rotating seat (22), a plurality of connecting bars (35) are fixedly mounted on the movable bar (29), a circular plate (33) is fixedly mounted on each connecting bar (35), and a limiting ring (40) is fixedly mounted on the upper side of each connecting bar (35).
2. The sensor single crystal silicon etching device according to claim 1, characterized in that: The upper side of the rotating seat (22) is provided with a connecting groove (32), a round block (24) is movably connected in the connecting groove (32), two clamping grooves (31) are provided on the round block (24), each clamping groove (31) is movably connected to a clamping block (23), and the two clamping blocks (23) are fixedly connected to the connecting groove (32).
3. The etching device for single crystal silicon of a sensor according to claim 2, characterized in that: An arc groove (27) is provided on the upper side of the round block (24), and a movable bar (29) is movably connected to the arc groove (27). Two fixed blocks (26) are fixedly installed on the upper side of the round block (24), and a trapezoidal block (25) is fixedly installed on each of the two fixed blocks (26).
4. The etching equipment for single crystal silicon of a sensor according to claim 1, characterized in that: A plurality of square tubes (34) are fixedly passed through the movable bar (29), a square box (28) is fixedly sleeved on each square tube (34), and each square box (28) has no box wall in the same direction.
5. The sensor single crystal silicon etching device according to claim 1, characterized in that: Each circular plate (33) is provided with a circular groove b (41), a side wall of each circular groove b (41) is provided with a notch b (38), and each limiting ring (40) is provided with a notch (39).
6. The sensor single crystal silicon etching equipment according to claim 1, characterized in that: The lower wall of the cabin (4) is provided with an annular groove a (14), a heat conducting pipe (13) is movably connected in the annular groove a (14), a spiral groove (15) is provided on the heat conducting pipe (13), a vertical pipe (17) is fixedly passed through the heat conducting pipe (13), the vertical pipe (17) is communicated with the spiral groove (15), a water inlet pipe (7) is movably sleeved on the vertical pipe (17), a fixed groove (16) is provided on the cabin (4), the water inlet pipe (7) is fixedly installed in the fixed groove (16), a water outlet pipe (42) is fixedly passed through the heat conducting pipe (13), and the water outlet pipe (42) is communicated with the spiral groove (15).
7. The sensor single crystal silicon etching device according to claim 6, characterized in that: A connecting ring (11) is provided on the lower side of the cabin body (4), a groove (12) is provided on the upper side of the connecting ring (11), a heat conducting pipe (13) is fixedly connected to the groove (12), an arc strip a (3) is fixedly mounted on the connecting ring (11), and an arc strip b (2) is fixedly mounted on the cabin body (4).
8. The sensor single crystal silicon etching device according to claim 7, characterized in that: Two positioning blocks (10) are fixedly mounted on the connecting ring (11), two blocks (8) are fixedly mounted on the cabin body (4), positioning grooves (9) are provided on the lower sides of the two blocks (8), the two positioning blocks (10) are movably connected to the two positioning grooves (9) respectively, a sealing ring (19) is attached to the upper side of the vertical pipe (17), a small ring (20) is fixedly mounted on the upper side of the sealing ring (19), and the small ring (20) is fixedly connected to the water inlet pipe (7).
Citation Information
Patent Citations
Sensor monocrystalline silicon etching device capable of etching uniformly
CN109461672A
Low-cost silicon carbide substrate etching jig based on reduction of etching factors
CN117913003A