A nanosecond pulse power supply

Abstract

The present invention relates to the field of pulse power supplies, and in particular to a nanosecond pulse power supply, comprising a PCB board, wherein a control module, a driving module, an upper tube unit and a lower tube unit are arranged on the PCB board, the driving module comprises a driving chip U5, a diode D1 and a resistor R1, a driving end of the control module is electrically connected to a high-side logic input end and a low-side logic input end of the driving chip U5, the upper tube unit is electrically connected between a high-side driving end and a high-side floating ground of the driving chip U5, a low-side driving end of the driving chip U5 is electrically connected to a lower tube unit, the lower tube unit and the power ground end of the driving chip U5 are both grounded, the upper tube unit and the lower tube unit have the same driving wiring path on the PCB board, an equal impedance structure is adopted, signal control transmission delay caused by inconsistent impedance is avoided, and the start-up rise and fall time are reduced.

Description

Technical Field

[0001] The invention relates to the field of pulse power supplies, and in particular to a nanosecond pulse power supply. Background Art

[0002] High-voltage pulse power supply is an advanced power electronic device that adds a switching circuit to a high-voltage DC power supply, so that it can output high-voltage pulse signals with adjustable pulse amplitude, width, frequency and output number. This power supply can generate high-voltage and high-current pulse signals, with a peak voltage of several thousand volts and a peak current of hundreds of amperes, and the output waveform and parameters have extremely high controllability and fast response capabilities.

[0003] High-voltage pulse power supplies have large instantaneous power, which can reach hundreds of kilowatts or even megawatts, making them very suitable for occasions that require high energy output. Secondly, the pulse width is narrow, usually only a few microseconds to tens of microseconds, so it has a very high energy density. In addition, high-voltage pulse power supplies also have the advantages of high efficiency, high reliability, and good environmental protection. Compared with traditional power supplies, high-voltage pulse power supplies have higher energy conversion efficiency, which can reach more than 90%; at the same time, because they use pulsed output, the switch life is longer and the overall reliability is also higher; and, no electromagnetic radiation is generated during operation, and the impact on the surrounding environment is also very small.

[0004] For example, the invention patent with application number CN201910687756.0, named as a micro-precision nanosecond pulse power supply device, includes a pulse generator, a low-voltage isolation drive module, a power regulation output module, an amplifier module and a constant voltage power supply. The first output end of the pulse generator outputs a pulse signal, which is accelerated by the low-voltage isolation drive module at the first stage, and then amplified by the second stage of high-voltage energy through the amplifier module to obtain an amplified pulse signal. The pulse signal provides energy for the discharge machining area. It can provide the equipment with a high-voltage and high-peak pulse power supply with a minimum of 100 nanoseconds, but the rising and falling edge times of the output pulse signal are relatively long, and the practicality is poor. Summary of the invention

[0005] The purpose of the present invention is to provide a nanosecond pulse power supply, aiming to improve the problem that the rising and falling edge times of the pulse signals output by conventional high-voltage pulse power supplies are long and the practicality is poor.

[0006] To achieve the above object, the present invention adopts the following technical solutions:

[0007] A nanosecond pulse power supply comprises a PCB board, wherein a control module, a driving module, an upper tube unit and a lower tube unit are arranged on the PCB board.

[0008] The power input terminals of the control module and the driving module are electrically connected to an external power supply VCC, and the external power supply outputs 100V to the power input terminals of the upper tube unit and the lower tube unit;

[0009] The driving module includes a driving chip U5, a diode D1 and a resistor R1.

[0010] The external power supply VCC is electrically connected to the low-side power port of the driving chip U5 and the positive electrode of the diode D1, and the negative electrode of the diode D1 is electrically connected to the high-side floating power port of the driving chip U5; the driving end of the control module is electrically connected to the high-side logic input end and the low-side logic input end of the driving chip U5, the resistor R1 is electrically connected between the driving end of the control module and the low-side logic input end of the driving chip U5, the upper tube unit is electrically connected between the high-side driving end and the high-side floating ground of the driving chip U5, the low-side driving end of the driving chip U5 is electrically connected to the lower tube unit, and the power ground ends of the lower tube unit and the driving chip U5 are both grounded;

[0011] The upper tube unit and the lower tube unit have the same driving wiring path on the PCB board.

[0012] Further, the control module includes a control chip U6, a crystal oscillator B1, a capacitor C17, a capacitor C18 and a resistor R161;

[0013] The external power supply VCC is electrically connected to the pin 8 and the pin 44 of the control chip U6, the pin 6 of the control chip U6 is electrically connected to the pin 1 of the crystal oscillator B1 and one end of the capacitor C17, the pin 7 of the control chip U6 is electrically connected to the pin 3 of the crystal oscillator B1 and one end of the capacitor C18, and the pin 1 of the control chip U6 outputs a TTL+ signal to the high-side logic input terminal and the low-side logic input terminal of the driver chip U5 as a driving end; the external circuit outputs the S2 control signal to one end of the resistor R141 and the pin 43 of the control chip U6;

[0014] Pin 2 and pin 4 of the crystal oscillator B1 , the other end of the capacitor C17 , the other end of the capacitor C18 , the other end of the resistor R161 , and pin 5 and pin 41 of the control chip U6 are all grounded.

[0015] Furthermore, the main frequency of the control chip U6 is greater than or equal to 100 MHz.

[0016] Furthermore, the crystal oscillator B1 is a high-speed crystal oscillator.

[0017] Furthermore, it also includes a voltage stabilizing module, which includes a voltage stabilizing chip U4 and load capacitors EC1 and EC2;

[0018] The external power source VCC is electrically connected to the input end of the voltage regulator chip U4 and one end of the load capacitor EC1, and the output end of the voltage regulator chip U4 is electrically connected to one end of the load capacitor EC2, and outputs a 5V voltage to the load circuit;

[0019] The other end of the load capacitor EC1, the other end of the load capacitor EC2 and the grounding end of the voltage stabilizing chip U4 are all grounded.

[0020] Further, the upper tube unit includes a MOS tube D4, a diode D2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, and a load capacitor EC3;

[0021] The external power supply outputs 100V to the drain of the MOS tube D4, one end of the resistor R5, one end of the resistor R6, one end of the resistor R7 and one end of the load capacitor EC3, and the other end of the load capacitor EC3 is grounded;

[0022] The other end of the resistor R5, the other end of the resistor R6 and the other end of the resistor R7 are all electrically connected to one end of the capacitor C1; the other end of the capacitor C1 is electrically connected to the high-side floating ground of the driver chip U5.

[0023] The high-side driving end of the driving chip U5 is electrically connected to the negative electrode of the diode D2, the positive electrode of the diode D2 is electrically connected to the gate of the MOS tube D4, the resistor R2 and the resistor R3 are connected in parallel between the high-side driving end of the driving chip U5 and the gate of the MOS tube D4, and the resistor R4 is electrically connected between the gate of the MOS tube D4 and the high-side floating ground of the driving chip U5;

[0024] The source of the MOS tube D4 is electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch, and the other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the lower tube unit; the other ends of the second branch, the third branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D4 are all electrically connected to the high-side floating ground of the driving chip U5.

[0025] Furthermore, the capacitance value of the load capacitor EC3 is in the range of 10-15uF.

[0026] Further, the lower tube unit includes a MOS tube D5, a diode D3, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14 and a capacitor C2;

[0027] The other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the drain of the MOS tube D5 and one end of the resistor R14; the resistors R8, R9 and R10 are connected in parallel between one end of the capacitor C2 and the high-side floating ground of the driver chip U5;

[0028] The low-side driving end of the driving chip U5 is electrically connected to the cathode of the diode D3, the anode of the diode D3 is electrically connected to the gate of the MOS tube D5, the resistor R11 and the resistor R12 are connected in parallel between the gate of the MOS tube D5 and the low-side driving end of the driving chip U5, and one end of the resistor R13 is electrically connected to the gate of the MOS tube D5;

[0029] The source of the MOS tube D5 is also electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch. The second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D5 are connected to each other.

[0030] The other ends of the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch, the eighth branch, the resistor R13, the resistor R14 and the capacitor C2 connected to the source of the MOS tube D5 are all grounded.

[0031] After adopting the above technical solution, the present invention has the following advantages compared with the background technology:

[0032] 1. The driving routing paths of the upper tube unit and the lower tube unit on the PCB board are the same, and an equal impedance structure is adopted to avoid signal control transmission delays due to inconsistent impedance, reduce the rise and fall time of the start-up, and effectively improve practicality.

[0033] 2. Control the main frequency of the control chip U6 so that it is greater than 100MHz, ensure that the output time is controlled within 10ns, and further reduce the rise and fall time.

[0034] 3. Control the capacitance value of the load capacitor EC1 to avoid too large capacitance value, which will prolong the charging time and affect the rise time. When the upper tube unit or the lower tube unit is turned off, the discharge time will be extended, which will affect the fall time. At the same time, avoid the capacitance value of the load capacitor EC1 being too small, which will cause instantaneous spike voltage and reduce the stability of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a circuit diagram of a driving module, an upper tube unit and a lower tube unit of the nanosecond pulse power supply of the present invention;

[0036] Figure 2 A circuit diagram of a control module of the nanosecond pulse power supply of the present invention;

[0037] Figure 3 This is a circuit diagram of a voltage stabilizing module of the nanosecond pulse power supply of the present invention;

[0038] Figure 4 This is a PCB wiring diagram of the upper tube unit of the nanosecond pulse power supply of the present invention;

[0039] Figure 5 This is a PCB wiring diagram of the lower tube unit of the nanosecond pulse power supply of the present invention;

[0040] Figure 6 This is a sampling waveform diagram under condition 1 of the nanosecond pulse power supply of the present invention;

[0041] Figure 7 This is a sampling waveform diagram under condition 2 of the nanosecond pulse power supply of the present invention;

[0042] Figure 8 This is a sampling waveform diagram under condition 3 of the nanosecond pulse power supply of the present invention;

[0043] Fig. 9 This is a sampling waveform diagram under condition 4 of the nanosecond pulse power supply described in the present invention. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0045] In addition, it should be noted that the terms "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element of the present invention must have a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0046] When an element is referred to as being “fixed to” or “disposed on” or “provided on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0047] Unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances. Example

[0048] Please refer to Figure 1-9 As shown, this embodiment provides a nanosecond pulse power supply, including a PCB board, on which a control module, a driving module, an upper tube unit and a lower tube unit are arranged, the power input terminals of the control module and the driving module are electrically connected to an external power supply VCC, and the external power supply outputs 100V to the power input terminals of the upper tube unit and the lower tube unit.

[0049] The driving module includes a driving chip U5, a diode D1 and a resistor R1; the external power supply VCC is electrically connected to the low-side power supply port of the driving chip U5 and the positive electrode of the diode D1, that is, the external power supply VCC is electrically connected to the pin 1 of the driving chip U5 and the positive electrode of the diode D1. The cathode of the diode D1 is electrically connected to the high-side floating power supply port of the driving chip U5; that is, the cathode of the diode D1 is electrically connected to the pin 8 of the driving chip U5. The driving end of the control module is electrically connected to the high-side logic input end and the low-side logic input end of the driving chip U5; the resistor R1 is electrically connected between the driving end of the control module and the low-side logic input end of the driving chip U5, that is, the driving end of the control module is electrically connected to the pin 2 of the driving chip U5 and one end of the resistor R1, and the other end of the resistor R1 is electrically connected to the pin 3 of the driving chip U5. The upper tube unit is electrically connected between the high-side driving end of the driving chip U5 and the high-side floating ground, that is, the upper tube unit is electrically connected between the pin 7 and the pin 6 of the driving chip U5. The low side driving end of the driver chip U5 is electrically connected to the lower tube unit, that is, the pin 5 of the driver chip U5 is electrically connected to the lower tube unit. The power ground terminals of the lower tube unit and the driver chip U5 are both grounded, that is, the pin 4 of the lower tube unit and the driver chip U5 are both grounded. Please refer to Figure 4 and Figure 5 As shown, in this embodiment, the upper tube unit and the lower tube unit have the same driving routing path on the PCB board. The upper tube unit and the lower tube unit adopt an equal impedance structure to avoid signal control transmission delay due to inconsistent impedance and reduce the rise and fall time of opening. In this embodiment, the model of the driver chip U5 is LN4303.

[0050] Specifically, the control module includes a control chip U6, a crystal oscillator B1, a capacitor C17, a capacitor C18 and a resistor R161.

[0051] The external power supply VCC is electrically connected to pin 8 and pin 44 of the control chip U6, pin 6 of the control chip U6 is electrically connected to pin 1 of the crystal oscillator B1 and one end of the capacitor C17, and pin 7 of the control chip U6 is electrically connected to pin 3 of the crystal oscillator B1 and one end of the capacitor C18. Pin 1 of the control chip U6 serves as a driving end to output a TTL+ signal to the high-side logic input end and the low-side logic input end of the driver chip U5, that is, pin 1 of the control chip U6 is electrically connected to pin 2 of the driver chip U5 and one end of the resistor R1. The external circuit outputs the S2 control signal to one end of the resistor R141 and pin 43 of the control chip U6.

[0052] Pin 2 and pin 4 of crystal oscillator B1, the other end of capacitor C17, the other end of capacitor C18, the other end of resistor R161, and pin 5 and pin 41 of control chip U6 are all grounded. The main frequency of control chip U6 is greater than or equal to 100MHz. In this embodiment, the model of control chip U6 is LPC11C14FBD48 / 301, which ensures that the output time is controlled within 10ns, further reducing the start-up rise and fall time. In this embodiment, crystal oscillator B1 is a high-speed crystal oscillator, which uses a high-speed crystal oscillator as a clock source to provide a clock signal for control chip U6. In this embodiment, a high-speed crystal oscillator refers to a crystal oscillator with an operating frequency greater than 10 megahertz (MHz). The piezoelectric effect of the quartz crystal is used to work in a resonant state to generate a stable and accurate single-frequency oscillation signal.

[0053] Furthermore, the nanosecond pulse power supply also includes a voltage stabilizing module, which includes a voltage stabilizing chip U4 and load capacitors EC1 and EC2; the external power supply VCC is electrically connected to the input end of the voltage stabilizing chip U4 and one end of the load capacitor EC1, the output end of the voltage stabilizing chip U4 is electrically connected to one end of the load capacitor EC2, and outputs a 5V voltage to the load circuit. The other end of the load capacitor EC1, the other end of the load capacitor EC2, and the ground end of the voltage stabilizing chip U4 are all grounded. In this embodiment, the model of the voltage stabilizing chip U4 is LD1117AG-5V, and the voltage stabilizing chip U4 outputs a 5V voltage to the load circuit.

[0054] Further, the upper tube unit includes a MOS tube D4, a diode D2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, and a load capacitor EC3. The external power supply outputs 100V to the drain of the MOS tube D4, one end of the resistor R5, one end of the resistor R6, one end of the resistor R7, and one end of the load capacitor EC3, and the other end of the load capacitor EC3 is grounded. The other end of the resistor R5, the other end of the resistor R6, and the other end of the resistor R7 are all electrically connected to one end of the capacitor C1; the other end of the capacitor C1 is electrically connected to the high-side suspension ground of the driver chip U5, that is, the other end of the capacitor C1 is electrically connected to the pin 6 of the driver chip U5. In this embodiment, the capacitance value of the load capacitor EC3 ranges from 10 to 15uF, and the capacitance value of the load capacitor EC3 is controlled to avoid the capacitance value being too large, so that the charging time is long, thereby affecting the rise time. When the upper tube unit or the lower tube unit is turned off, the discharge time will be extended, thereby affecting the fall time. At the same time, avoid the capacitance value of the load capacitor EC3 being too small, which may cause instantaneous spike voltage and reduce the stability of the system.

[0055] The high side driving end of the driving chip U5 is electrically connected to the negative electrode of the diode D2, that is, the pin 7 of the driving chip U5 is electrically connected to the negative electrode of the diode D2. The positive electrode of the diode D2 is electrically connected to the gate of the MOS tube D4. The resistor R2 and the resistor R3 are connected in parallel between the high side driving end of the driving chip U5 and the gate of the MOS tube D4, that is, the resistor R2 and the resistor R3 are connected in parallel between the pin 7 of the driving chip U5 and the gate of the MOS tube D4. The resistor R4 is electrically connected between the gate of the MOS tube D4 and the high side suspension ground of the driving chip U5, that is, the resistor R4 is electrically connected between the gate of the MOS tube D4 and the pin 6 of the driving chip U5.

[0056] The source of the MOS tube D4 is electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch, and the other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the lower tube unit. The other ends of the second branch, the third branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D4 are all electrically connected to the high-side floating ground of the driving chip U5, that is, the other ends of the second branch, the third branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D4 are all electrically connected to the pin 6 of the driving chip U5.

[0057] Furthermore, the lower tube unit includes a MOS tube D5, a diode D3, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14 and a capacitor C2.

[0058] The other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the drain of the MOS tube D5 and one end of the resistor R14. The resistors R8, R9 and R10 are connected in parallel between one end of the capacitor C2 and the high-side floating ground of the driver chip U5, that is, the resistors R8, R9 and R10 are connected in parallel between one end of the capacitor C2 and the pin 6 of the driver chip U5.

[0059] The low side driving end of the driving chip U5 is electrically connected to the negative electrode of the diode D3, that is, the pin 5 of the driving chip U5 is electrically connected to the negative electrode of the diode D3. The positive electrode of the diode D3 is electrically connected to the gate of the MOS tube D5. The resistor R11 and the resistor R12 are connected in parallel between the gate of the MOS tube D5 and the low side driving end of the driving chip U5, that is, the resistor R11 and the resistor R12 are connected in parallel between the gate of the MOS tube D5 and the pin 5 of the driving chip U5. One end of the resistor R13 is electrically connected to the gate of the MOS tube D5.

[0060] In this embodiment, the source of the MOS tube D5 is also electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch, and the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D5 are connected to each other.

[0061] The second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch, the eighth branch, the resistor R13, the resistor R14, and the other end of the capacitor C2 connected to the source of the MOS tube D5 are all grounded.

[0062] The nanosecond pulse power supply described in this embodiment is used in a half-bridge drive circuit, and plays a key role in the selection, calculation and layout impedance matching. It is mainly used in laser power supplies or other circuits that require instantaneous high power, and has a wide range of applications.

[0063] Table 1: Sampling parameters

[0064]

[0065] Please refer to the attached Figure 6-9 , Figures 6 to 9 The sampling waveforms under conditions 1, 2, 3 and 4 are compared. Figure 7 , Figure 8 and Figure 6 , Fig. 9 ,in Figure 7 and Figure 8 Under the premise of conditions 2 and 3, the rise time and fall time as well as their average, minimum and maximum values ​​are kept within 13ns, effectively shortening the rise and fall time of the output pulse signal; Figure 6 and Fig. 9 Under conditions 1 and 4, a larger capacitance value of the load capacitor EC1 is set so that the maximum value of the fall time approaches 13ns or is slightly greater than 13ns. Compared with the setting range of this embodiment, the effect of shortening the time of the rising edge and the falling edge is slightly reduced. However, compared with the existing nanosecond pulse power supply, it also effectively shortens the rising edge and the falling edge time of the output pulse signal.

[0066] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A nanosecond pulse power supply, characterized in that: It includes a PCB board, on which a control module, a driving module, an upper tube unit and a lower tube unit are arranged. The power input terminals of the control module and the driving module are electrically connected to an external power supply VCC, and the external power supply outputs 100V to the power input terminals of the upper tube unit and the lower tube unit; The driving module includes a driving chip U5, a diode D1 and a resistor R1. The external power supply VCC is electrically connected to the low-side power port of the driving chip U5 and the positive electrode of the diode D1, and the negative electrode of the diode D1 is electrically connected to the high-side floating power port of the driving chip U5; the driving end of the control module is electrically connected to the high-side logic input end and the low-side logic input end of the driving chip U5, the resistor R1 is electrically connected between the driving end of the control module and the low-side logic input end of the driving chip U5, the upper tube unit is electrically connected between the high-side driving end and the high-side floating ground of the driving chip U5, the low-side driving end of the driving chip U5 is electrically connected to the lower tube unit, and the power ground ends of the lower tube unit and the driving chip U5 are both grounded; The upper tube unit and the lower tube unit have the same driving wiring path on the PCB board; The upper tube unit includes a MOS tube D4, a diode D2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, and a load capacitor EC3; The external power supply outputs 100V to the drain of the MOS tube D4, one end of the resistor R5, one end of the resistor R6, one end of the resistor R7 and one end of the load capacitor EC3, and the other end of the load capacitor EC3 is grounded; The other end of the resistor R5, the other end of the resistor R6 and the other end of the resistor R7 are all electrically connected to one end of the capacitor C1; the other end of the capacitor C1 is electrically connected to the high-side floating ground of the driver chip U5. The high-side driving end of the driving chip U5 is electrically connected to the negative electrode of the diode D2, the positive electrode of the diode D2 is electrically connected to the gate of the MOS tube D4, the resistor R2 and the resistor R3 are connected in parallel between the high-side driving end of the driving chip U5 and the gate of the MOS tube D4, and the resistor R4 is electrically connected between the gate of the MOS tube D4 and the high-side floating ground of the driving chip U5; The source of the MOS tube D4 is electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch. The other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the lower tube unit; the other ends of the second branch, the third branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D4 are all electrically connected to the high-side floating ground of the driving chip U5; The capacitance value of the load capacitor EC3 ranges from 10 to 15 uF.

2. The nanosecond pulse power supply according to claim 1, characterized in that: The control module includes a control chip U6, a crystal oscillator B1, a capacitor C17, a capacitor C18 and a resistor R161; The external power supply VCC is electrically connected to the pin 8 and the pin 44 of the control chip U6, the pin 6 of the control chip U6 is electrically connected to the pin 1 of the crystal oscillator B1 and one end of the capacitor C17, the pin 7 of the control chip U6 is electrically connected to the pin 3 of the crystal oscillator B1 and one end of the capacitor C18, and the pin 1 of the control chip U6 outputs a TTL+ signal to the high-side logic input terminal and the low-side logic input terminal of the driver chip U5 as a driving end; the external circuit outputs the S2 control signal to one end of the resistor R141 and the pin 43 of the control chip U6; Pin 2 and pin 4 of the crystal oscillator B1 , the other end of the capacitor C17 , the other end of the capacitor C18 , the other end of the resistor R161 , and pin 5 and pin 41 of the control chip U6 are all grounded.

3. The nanosecond pulse power supply according to claim 2, characterized in that: The main frequency of the control chip U6 is greater than or equal to 100 MHz.

4. The nanosecond pulse power supply according to claim 2, characterized in that: The crystal oscillator B1 is a high-speed crystal oscillator.

5. The nanosecond pulse power supply according to claim 1, characterized in that: It also includes a voltage stabilizing module, which includes a voltage stabilizing chip U4 and load capacitors EC1 and EC2; The external power source VCC is electrically connected to the input end of the voltage regulator chip U4 and one end of the load capacitor EC1, and the output end of the voltage regulator chip U4 is electrically connected to one end of the load capacitor EC2, and outputs a 5V voltage to the load circuit; The other end of the load capacitor EC1, the other end of the load capacitor EC2 and the grounding end of the voltage stabilizing chip U4 are all grounded.

6. The nanosecond pulse power supply according to claim 1, characterized in that: The lower tube unit includes a MOS tube D5, a diode D3, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14 and a capacitor C2; The other end of the fourth branch connected to the source of the MOS tube D4 is electrically connected to the drain of the MOS tube D5 and one end of the resistor R14; the resistors R8, R9 and R10 are connected in parallel between one end of the capacitor C2 and the high-side floating ground of the driver chip U5; The low-side driving end of the driving chip U5 is electrically connected to the negative electrode of the diode D3, the positive electrode of the diode D3 is electrically connected to the gate of the MOS tube D5, the resistor R11 and the resistor R12 are connected in parallel between the gate of the MOS tube D5 and the low-side driving end of the driving chip U5, and one end of the resistor R13 is electrically connected to the gate of the MOS tube D5; The source of the MOS tube D5 is also electrically connected to the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch. The second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch and the eighth branch connected to the source of the MOS tube D5 are connected to each other. The other ends of the second branch, the third branch, the fourth branch, the fifth branch, the sixth branch, the seventh branch, the eighth branch, the resistor R13, the resistor R14 and the capacitor C2 connected to the source of the MOS tube D5 are all grounded.

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