Switch for radio frequency SoC chip, SoC chip and temperature compensation control method

Abstract

The invention discloses a switch for a radio frequency SoC chip, the SoC chip and a temperature compensation control method, the switch comprises a first series branch and a second series branch which are respectively connected with a first port, and each of the first series branch and the second series branch comprises a quarter-wavelength line and a parallel grounding MOS tube which are arranged on the corresponding series branch in series; the quarter-wavelength line is connected in parallel with at least one temperature compensation phase shift unit. According to the invention, through a mode of combining the temperature compensation phase shift unit and the switch architecture, the phase adjustment of the whole SoC chip is realized through simple voltage control while not occupying more space. Under the condition of not occupying redundant layout space, the phase adjustment means of the multifunctional SoC chip is more convenient and quicker, and the switch weight of the temperature compensation phase shift unit can be directly and fixedly controlled after the allowance required to be compensated for by high and low temperatures is determined; moreover, the technology is not limited by the technology, can be transplanted in parallel, and can be widely applied to various frequency bands.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency chips, and in particular to a switch for a radio frequency SoC chip, a SoC chip and a temperature compensation control method. Background Art

[0002] System on Chip (SoC), also known as system on chip, means that it is a product, an integrated circuit with a dedicated purpose, which contains all the contents of a complete system and embedded software. For multi-channel multi-function SoC chips, the phase of each channel will change with the change of temperature at different temperatures, which is a problem that needs to be solved for the entire SoC chip.

[0003] The phase of existing SoC multifunctional chips is different at high and low temperatures. The main means of adjustment needs to rely on temperature-compensated phase shifters to reselect points to pull back the phase offset. However, if there is no temperature-compensated phase shifter in the multifunctional chip, the means of adjustment are relatively scarce or even non-existent. For the temperature-compensated phase shifter, its adjustment requires reselection of points, which also makes the use of SoC chips more cumbersome. Even when working at different temperatures, it is necessary to check the truth table to change.

[0004] In RF SoC chips, high-frequency switches are used to control the transmission path of signals. By precisely controlling the switching state of MOS tubes, precise control and routing of signals can be achieved. Figure 1 The structure of wavelength line plus parallel grounded MOS tube shown mainly involves the combined use of wavelength line (usually refers to transmission line) and MOS tube (metal-oxide-semiconductor field-effect transistor). This structure has certain application value in electronic circuits, especially in high-frequency switching and impedance matching. Wavelength line is a transmission line used to transmit electromagnetic waves. It has specific impedance and propagation characteristics and is often used in high-frequency circuits. MOS tube is a field-effect transistor that controls the current between the source and the drain by controlling the gate voltage, and has the characteristics of high input impedance and low noise. In high-frequency switching applications, the combined structure of wavelength line and MOS tube can provide better switching performance and impedance matching.

[0005] If the temperature-compensated phase shifting and switch architecture can be combined, the phase adjustment (main control or auxiliary control) of the entire RF SoC chip can be achieved with simple voltage control without taking up more space. Summary of the invention

[0006] The object of the present invention is to overcome the deficiencies of the prior art and to provide a switch for a radio frequency SoC chip, a SoC chip and a temperature compensation control method.

[0007] The objective of the present invention is achieved through the following technical solutions: According to a first aspect of the present invention, a switch for a radio frequency SoC chip is provided, comprising a first series branch and a second series branch respectively connected to a first port, wherein the first series branch and the second series branch both comprise a quarter-wavelength line arranged in series on the corresponding series branch and a MOS tube connected in parallel to the ground; at least one temperature-compensated phase-shifting unit is connected in parallel on the quarter-wavelength line.

[0008] Further, the gate of the parallel-connected MOS transistor is connected to an external control signal, the source of the parallel-connected MOS transistor is grounded and the drain is connected to the corresponding series branch, or the drain of the parallel-connected MOS transistor is grounded and the source is connected to the corresponding series branch.

[0009] Furthermore, the temperature-compensated phase-shifting unit comprises a temperature-compensated capacitor and a temperature-compensated MOS tube which are connected in series and grounded, and a gate of the temperature-compensated MOS tube is connected to an external control signal.

[0010] Further, one end of the temperature compensation capacitor is connected to a quarter wavelength line, the other end of the temperature compensation capacitor is connected to the source of the temperature compensation MOS tube, and the gate of the temperature compensation MOS tube is grounded; or: One end of the temperature compensation capacitor is connected to a quarter-wavelength line, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is grounded; or: One end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the source of the temperature compensation MOS tube, and the drain of the temperature compensation MOS tube is connected to the quarter-wavelength line; or: One end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is connected to the quarter-wavelength line.

[0011] Furthermore, the temperature-compensating phase-shifting units are arranged in a plurality of groups, and in an initial state, at least one group of the temperature-compensating phase-shifting units is turned on and at least one group of the temperature-compensating phase-shifting units is turned off.

[0012] A second aspect of the present invention provides a SoC chip, comprising: The switch for the radio frequency SoC chip as described in the first aspect; A first RF branch is connected to a second port of a switch for a RF SoC chip, wherein the second port of the switch for the RF SoC chip is a port of the first series branch away from the first port; the first RF branch includes a first temperature-compensated phase shifter; The second RF branch is connected to the third port of the switch for the RF SoC chip, and the third port of the switch for the RF SoC chip is the port of the second series branch far away from the first port; the second RF branch includes a second temperature-compensated phase shifter; Temperature detection circuit, used to detect the local temperature of the chip; The control module realizes the conduction and cutoff of the first series branch and the second series branch by controlling the opening and closing of the parallel-connected MOS tube, and controls the temperature-compensated phase shifting unit of the switch for the RF SoC chip and / or controls the phase shift of the temperature-compensated phase shifter of the RF branch according to the temperature detection result of the temperature detection circuit.

[0013] Furthermore, the first RF branch and the second RF branch also include one or more of a filter, an equalizer, a limiter, an attenuator, an amplifier, and a mixer.

[0014] Furthermore, the first radio frequency branch is a radio frequency transmitting branch, and the second radio frequency branch is a radio frequency receiving branch.

[0015] A third aspect of the present invention provides a temperature compensation control method for a SoC chip as described in the second aspect, comprising: The control module calculates the phase value to be adjusted according to the temperature detection result of the temperature detection circuit; When the phase value to be adjusted is a small range phase, the control module outputs a first control signal to control the temperature-compensated phase shifting unit of the switch of the RF SoC chip to perform temperature-compensated phase shifting; otherwise, the control module outputs a second control signal to control the temperature-compensated phase shifter of the corresponding RF branch to perform temperature-compensated phase shifting.

[0016] Furthermore, the small range phase is between plus or minus 5 degrees.

[0017] The beneficial effects of the present invention are: In an exemplary embodiment of the present invention, by combining the temperature-compensated phase-shifting unit with the switch architecture, the phase adjustment of the entire SoC chip is achieved by simple voltage control without occupying more space. Without occupying extra layout space, the phase adjustment method of the multi-functional SoC chip is more convenient and quick. After determining the margin required for compensation of high and low temperatures, the switch weight of the control capacitor can be directly fixed; moreover, this technology is not limited by the process, can be transplanted in parallel, and can be more widely used in various frequency bands. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural block diagram of a switch for a radio frequency SoC chip in the prior art; Figure 2 A circuit block diagram of a switch for a radio frequency SoC chip provided by an exemplary embodiment of the present invention; Figure 3 An equivalent circuit block diagram of a quarter-wavelength line provided for an exemplary embodiment of the present invention; Figure 4 A circuit block diagram of a temperature-compensated phase-shifting unit provided in accordance with an exemplary embodiment of the present invention; Figure 5A circuit block diagram of another temperature-compensated phase-shifting unit provided by an exemplary embodiment of the present invention; Figure 6 A circuit block diagram of a SoC chip provided for an exemplary embodiment of the present invention; Figure 7 A circuit block diagram of a SoC chip based on multiple sets of RF SoC chip switches provided by an exemplary embodiment of the present invention; Figure 8 A flow chart of a temperature compensation control method for a SoC chip provided by an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0019] The technical solution of the present invention is described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] In the description of the present invention, it should be noted that the directions or positional relationships indicated by "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. are directions or positional relationships based on the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0021] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0023] See also Figure 2 , Figure 2A switch for a radio frequency SoC chip provided in an exemplary embodiment of the present invention is shown, comprising a first series branch and a second series branch respectively connected to a first port, wherein the first series branch and the second series branch both comprise a quarter-wavelength line arranged in series on the corresponding series branch and a MOS tube connected in parallel to the ground; at least one temperature-compensated phase-shifting unit is connected in parallel on the quarter-wavelength line.

[0024] First, similar to the prior art, in this exemplary embodiment, a structure of a MOS tube connected in parallel on a wavelength line is used to realize a switch for a radio frequency SoC chip, wherein: a quarter-wavelength line is used as a transmission line to transmit high-frequency signals. By connecting a parallel grounded MOS tube in parallel on the quarter-wavelength line, the switching characteristics of the MOS tube itself can be used to control the on-off of the signal. When the parallel grounded MOS tube is turned on, the signal can pass; when the parallel grounded MOS tube is turned off, the signal is blocked. This structure is very useful in high-frequency switching circuits and can achieve fast switching and high-frequency response. In the switch for a radio frequency SoC chip provided in this exemplary embodiment, two series branches of a first series branch and a second series branch are used to realize path selection (i.e., a switching function), that is, by controlling the on and off of the parallel grounded MOS tubes in the first series branch and the second series branch, the corresponding series branch is turned on and off.

[0025] Different from the prior art, this exemplary embodiment has at least one temperature-compensated phase-shifting unit connected in parallel on the quarter-wavelength line, and when the temperature-compensated phase-shifting unit is turned on (conducted), phase shifting is performed, otherwise no phase shifting is performed (cut off or disconnected). Figure 3 As shown, the quarter-wavelength line is equivalent to multiple sections of equivalent inductance connected in series, and temperature-compensated phase-shifting units (at least one, Figure 3 It is the preferred solution, that is, multiple solutions are selected according to actual conditions). When the temperature-compensated phase-shifting unit is turned on, a low-pass network is formed. When the signal passes through the network, part of it leaks to the ground. Therefore, the circuit has a certain insertion loss at this time. The temperature-compensated phase-shifting unit is defined as being in a phase-shifting state at this time. When the temperature-compensated phase-shifting unit is turned off, it is approximately an open circuit. At this time, the signal will not leak to the ground but directly flows to the output. The temperature-compensated phase-shifting unit is defined as being in a reference state at this time.

[0026] Therefore, in this exemplary embodiment, by combining the temperature-compensated phase-shifting unit and the switch architecture, the phase adjustment of the entire RF SoC chip is achieved by simple voltage control without taking up more space. Specifically, in the RF SoC chip system, since the existence of the switch is irreplaceable, the temperature-compensated module is added to the original architecture of the switch, which saves area while not adding new modules to the system, reducing the burden on the system; and: allowing the system to have more adjustment means, rather than relying solely on the phase shifter to compensate for the phase shift (if there is no phase shifter, the phase shift compensation cannot be performed). Without taking up extra layout space, the phase adjustment means of the multi-functional SoC chip is more convenient and quick. After determining the margin required for compensation of high and low temperatures, the switch weight (number) of the temperature-compensated phase-shifting unit can be directly fixed and controlled; and this technology is not limited by the process, can be transplanted in parallel, and can be more widely used in various frequency bands.

[0027] It is also necessary to explain that when there is a temperature-compensated phase shifter inside the RF SoC chip, the temperature-compensated phase shifter needs to be adjusted to reselect the point, which makes the use of the SoC chip more cumbersome. Even when working at different temperatures, it is necessary to check the truth table to change. In this exemplary embodiment, after the temperature-compensated phase shifter is selected at normal temperature, the change between high temperature and low temperature will cause the phase to shift. When the offset is within a certain range (small phase shift, such as plus or minus five degrees), there is no need to reselect the point. The phase can be compensated back by using the temperature-compensated phase shifter unit in the switch of the RF SoC chip, and the phase shifter can still use the point selected at normal temperature.

[0028] More preferably, in an exemplary embodiment, Figure 2 As shown, the gate of the parallel-connected MOS transistor is connected to the external control signal, the source of the parallel-connected MOS transistor is grounded and the drain is connected to the corresponding series branch, or the drain of the parallel-connected MOS transistor is grounded and the source is connected to the corresponding series branch.

[0029] Specifically, in this exemplary embodiment, the gate of the parallel-connected MOS tube to the ground is connected to an external control signal, and the external control signal is used to control the conduction and cutoff of the parallel-connected MOS tube to the ground, thereby controlling the conduction and cutoff of the corresponding series branch; and the source and drain of the parallel-connected MOS tube to the ground, one pole is grounded and the other pole is connected to the series branch.

[0030] More preferably, in an exemplary embodiment, Figure 4 As shown, the temperature-compensated phase-shifting unit includes a temperature-compensated capacitor and a temperature-compensated MOS tube which are connected in series and grounded, and the gate of the temperature-compensated MOS tube is connected to an external control signal.

[0031] Specifically, in this exemplary embodiment, the temperature-compensated phase-shifting unit is implemented by a temperature-compensated capacitor and a temperature-compensated MOS tube. The temperature-compensated capacitor is the main module for realizing phase change. The temperature-compensated MOS tube acts as a switch and is turned on when temperature compensation is required (implemented by connecting the gate of the temperature-compensated MOS tube to an external control signal). At this time, the temperature-compensated phase-shifting unit can be equivalent to a transistor on-resistance Ron of a temperature-compensated MOS tube connected in series with a capacitor to form a low-pass network. When a signal passes through the network, a part of it leaks to the ground. At this time, the circuit has a certain insertion loss, and the phase-shifting unit is defined as being in a phase-shifting state; when temperature compensation is not required, it is closed. At this time, the temperature-compensated phase-shifting unit can be equivalent to an off-resistance Roff connected in series with a capacitor. Since the equivalent resistance Roff when the transistor is turned off is very large, the parallel branch is approximately an open circuit. At this time, the signal will not leak to the ground but will directly flow to the output, and the phase-shifting unit is defined as being in a reference state.

[0032] In this way, the temperature compensation capacitor and the temperature compensation MOS tube occupy a small area, and the temperature compensation phase shifting function can be realized without increasing the overall area of ​​the switch.

[0033] More preferably, in an exemplary embodiment, Figure 4 As shown, one end of the temperature compensating capacitor is connected to a quarter-wavelength line, the other end of the temperature compensating capacitor is connected to the source of the temperature compensating MOS tube, and the gate of the temperature compensating MOS tube is grounded; or: One end of the temperature compensation capacitor is connected to a quarter-wavelength line, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is grounded; or: like Figure 5 As shown, one end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the source of the temperature compensation MOS tube, and the drain of the temperature compensation MOS tube is connected to the quarter-wavelength line; or: One end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is connected to the quarter-wavelength line.

[0034] Specifically, in this exemplary embodiment, the series relationship between the temperature-compensating capacitor and the temperature-compensating MOS tube in the temperature-compensating phase-shifting unit can be switched back and forth, thereby achieving grounding and access to the quarter-wavelength line at different positions.

[0035] More preferably, in an exemplary embodiment, Figure 3 As shown, the temperature-compensating phase-shifting units are arranged in a plurality of groups, and in an initial state, at least one group of the temperature-compensating phase-shifting units is turned on and at least one group of the temperature-compensating phase-shifting units is turned off.

[0036] Specifically, in this exemplary embodiment, multiple groups of temperature-compensated phase-shifting units are connected in parallel on a quarter-wavelength line, and the phase is changed by changing the weights. At the same time, an intermediate state is selected to perform positive and negative adjustments: taking 16 temperature-compensated phase-shifting units as an example, turning on 8 of them is the intermediate state. Turning on more temperature-compensated phase-shifting units means increasing the phase, and turning on fewer temperature-compensated phase-shifting units means decreasing the phase, thereby achieving positive and negative phase adjustment.

[0037] The same inventive concept as the above exemplary embodiment is shown in FIG. Figure 6 , Figure 6 A SoC chip provided by an exemplary embodiment of the present invention is shown, comprising: like Figure 2 The switch for the radio frequency SoC chip; A first RF branch is connected to a second port of a switch for a RF SoC chip, wherein the second port of the switch for the RF SoC chip is a port of the first series branch away from the first port; the first RF branch includes a first temperature-compensated phase shifter; The second RF branch is connected to the third port of the switch for the RF SoC chip, and the third port of the switch for the RF SoC chip is the port of the second series branch far away from the first port; the second RF branch includes a second temperature-compensated phase shifter; Temperature detection circuit, used to detect the local temperature of the chip; The control module realizes the conduction and cutoff of the first series branch and the second series branch by controlling the opening and closing of the parallel-connected MOS tube, and controls the temperature-compensated phase shifting unit of the switch for the RF SoC chip and / or controls the phase shift of the temperature-compensated phase shifter of the RF branch according to the temperature detection result of the temperature detection circuit.

[0038] Specifically, in this exemplary embodiment, the first RF branch and the second RF branch realize two-way RF data transmission, and the RF SoC chip switch realizes the conduction and shutdown of the two RF branches by controlling the on-off of the parallel-connected MOS tube of the first series branch and the on-off of the parallel-connected MOS tube of the second series branch; and the control of the parallel-connected MOS tube is realized by the control module. At the same time, the control module is also used to perform temperature-compensated phase shift control, and the temperature-compensated phase shift unit of the RF SoC chip switch and / or the phase shift of the temperature-compensated phase shifter of the RF branch are controlled by the temperature detection result of the temperature detection circuit.

[0039] In other words, without taking up extra layout space, the phase adjustment method of the multi-functional SoC chip is more convenient and quick. After determining the margin required for compensation of high and low temperatures, the switching weight of the control capacitor can be directly fixed. Moreover, this technology is not subject to process restrictions and can be transplanted in parallel, and can be more widely used in various frequency bands.

[0040] At the same time, when the RF SoC chip has a temperature-compensated phase shifter inside, the temperature-compensated phase shifter needs to be adjusted to reselect the point, which makes the use of the SoC chip more cumbersome. Even when working at different temperatures, it is necessary to check the truth table to change. In this exemplary embodiment, after the temperature-compensated phase shifter is selected at normal temperature, the change between high temperature and low temperature will cause the phase to shift. When the offset is within a certain range (small phase shift, such as plus or minus five degrees), there is no need to reselect the point. The phase can be compensated back by using the temperature-compensated phase shifter unit in the switch of the RF SoC chip, and the phase shifter can still use the point selected at normal temperature.

[0041] In addition, the temperature-compensated phase shift unit in the switch used in the RF SoC chip can also expand or fine-tune the phase shift size of the temperature-compensated phase shifter in the second RF branch to a certain extent.

[0042] In such Figure 7 In the SoC chip shown (the control module and the temperature detection module are not shown in the figure), there are four groups of RF SoC chip switches, first RF branches, and second RF branches. The first port of each group of RF SoC chip switches is connected through a one-to-four power divider, thereby realizing a multi-RF path structure.

[0043] It should be noted that, for different temperatures, by turning on different numbers of temperature-compensated phase-shifting units, the phase change corresponding to the temperature change can be achieved. After the slope is written into the register, automatic control can be achieved based on the feedback from the temperature sensor.

[0044] More preferably, in an exemplary embodiment, the first RF branch and the second RF branch further include one or more of a filter, an equalizer, a limiter, an attenuator, an amplifier, and a mixer.

[0045] Specifically, in this exemplary embodiment, in addition to the temperature compensated phase shifter, the first RF branch and the second RF branch may also include other devices for processing RF signals, such as filters, equalizers, limiters, attenuators, amplifiers, and mixers, which can be selected according to actual needs.

[0046] More preferably, in an exemplary embodiment, the first radio frequency branch is a radio frequency transmitting branch, and the second radio frequency branch is a radio frequency receiving branch.

[0047] Specifically, the T / R component is the part between the radio frequency and the antenna in the wireless transceiver system, and is mainly composed of a low noise amplifier, a power amplifier, a limiter, a phase shifter, and other parts. Its main functions include amplifying the transmitted signal, amplifying the received signal, and controlling the signal amplitude and phase. In an active phased array radar, the T / R component is a basic component and key technology of the antenna, and plays a vital role in the performance of the radar. In this exemplary embodiment, the first radio frequency branch is defined as a radio frequency transmitting branch, and the second radio frequency branch is defined as a radio frequency receiving branch.

[0048] The same inventive concept as the above exemplary embodiment is shown in FIG. Figure 8 , Figure 8 An exemplary embodiment of the present invention provides Figure 6 The temperature compensation control method of the SoC chip comprises: The control module calculates the phase value to be adjusted according to the temperature detection result of the temperature detection circuit; When the phase value to be adjusted is a small range phase, the control module outputs a first control signal to control the temperature-compensated phase shifting unit of the switch of the RF SoC chip to perform temperature-compensated phase shifting; otherwise, the control module outputs a second control signal to control the temperature-compensated phase shifter of the corresponding RF branch to perform temperature-compensated phase shifting.

[0049] Specifically, in this exemplary embodiment, the control module calculates the phase value to be adjusted based on the temperature detection result of the temperature detection circuit. When the phase value to be adjusted is a small range phase, the control module outputs a first control signal for controlling the temperature-compensated phase shifting unit of the switch for the RF SoC chip to perform temperature-compensated phase shifting. In other words, after the temperature-compensated phase shifter selects the point corresponding to the temperature, the change of high temperature and low temperature will cause the phase to shift. When the offset is within a certain range (small phase shift, such as within plus or minus five degrees), there is no need to reselect the point. The phase can be compensated back by the temperature-compensated phase shifting unit in the switch for the RF SoC chip, and the phase shifter can still use the point selected at normal temperature.

[0050] When the phase shift range is larger (for example, when the temperature environment becomes larger), the control module outputs a second control signal to control the temperature-compensated phase shifter of the corresponding RF branch to perform temperature-compensated phase shifting.

[0051] Obviously, the above embodiments are merely examples for clear explanation, and are not intended to limit the implementation methods. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from them are still within the protection scope of the invention.

Claims

1. A switch for a radio frequency SoC chip, characterized in that: It comprises a first series branch and a second series branch respectively connected to the first port, wherein the first series branch and the second series branch both comprise a quarter-wavelength line arranged in series on the corresponding series branch and a MOS tube connected to the ground in parallel; at least one temperature-compensated phase-shifting unit is connected in parallel on the quarter-wavelength line.

2. The switch for a radio frequency SoC chip according to claim 1, characterized in that: The gate of the parallel-connected MOS transistor is connected to an external control signal, the source of the parallel-connected MOS transistor is grounded and the drain is connected to the corresponding series branch, or the drain of the parallel-connected MOS transistor is grounded and the source is connected to the corresponding series branch.

3. The switch for a radio frequency SoC chip according to claim 1, characterized in that: The temperature-compensated phase-shifting unit comprises a temperature-compensated capacitor and a temperature-compensated MOS tube which are connected in series and grounded, and a gate of the temperature-compensated MOS tube is connected to an external control signal.

4. The switch for a radio frequency SoC chip according to claim 3, characterized in that: One end of the temperature compensation capacitor is connected to the quarter-wavelength line, the other end of the temperature compensation capacitor is connected to the source of the temperature compensation MOS tube, and the gate of the temperature compensation MOS tube is grounded; or: One end of the temperature compensation capacitor is connected to the quarter-wavelength line, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is grounded; or: One end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the source of the temperature compensation MOS tube, and the drain of the temperature compensation MOS tube is connected to the quarter-wavelength line; or: One end of the temperature compensation capacitor is connected to the ground, the other end of the temperature compensation capacitor is connected to the drain of the temperature compensation MOS tube, and the source of the temperature compensation MOS tube is connected to the quarter-wavelength line.

5. The switch for a radio frequency SoC chip according to claim 1, characterized in that: The temperature-compensating phase-shifting units are arranged in a plurality of groups, and in an initial state, at least one group of the temperature-compensating phase-shifting units is turned on and at least one group of the temperature-compensating phase-shifting units is turned off.

6. SoC chip, characterized by: include: A switch for a radio frequency SoC chip as claimed in any one of claims 1 to 5; A first RF branch is connected to a second port of a switch for a RF SoC chip, wherein the second port of the switch for the RF SoC chip is a port of the first series branch away from the first port; the first RF branch includes a first temperature-compensated phase shifter; The second RF branch is connected to the third port of the switch for the RF SoC chip, and the third port of the switch for the RF SoC chip is the port of the second series branch far away from the first port; the second RF branch includes a second temperature-compensated phase shifter; Temperature detection circuit, used to detect the local temperature of the chip; The control module realizes the conduction and cutoff of the first series branch and the second series branch by controlling the opening and closing of the parallel-connected MOS tube, and controls the temperature-compensated phase shifting unit of the switch for the RF SoC chip and / or controls the phase shift of the temperature-compensated phase shifter of the RF branch according to the temperature detection result of the temperature detection circuit.

7. The SoC chip according to claim 6, characterized in that: The first radio frequency branch and the second radio frequency branch further include one or more of a filter, an equalizer, a limiter, an attenuator, an amplifier, and a mixer.

8. The SoC chip according to claim 6, characterized in that: The first radio frequency branch is a radio frequency transmitting branch, and the second radio frequency branch is a radio frequency receiving branch.

9. The temperature compensation control method of a SoC chip according to any one of claims 6 to 8, characterized in that: include: The control module calculates the phase value to be adjusted according to the temperature detection result of the temperature detection circuit; When the phase value to be adjusted is a small-range phase, the control module outputs a first control signal to control the temperature-compensated phase-shifting unit of the switch of the RF SoC chip to perform temperature-compensated phase-shifting; Otherwise, the control module outputs a second control signal for controlling the temperature-compensated phase shifter of the corresponding radio frequency branch to perform temperature-compensated phase shifting.

10. The temperature compensation control method of the SoC chip according to claim 9, characterized in that: The small range phase is between plus and minus 5 degrees.

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