Fully synchronous control method and device for memristor complex-valued network

Abstract

The present invention provides a complete synchronization control method and device for a memristor complex-valued network, the method comprising: taking a complex Lorentz system as a node, constructing a first memristor complex-valued network formed by a plurality of nodes coupled in a ring; adding a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network; determining a synchronization error system according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state; determining the synchronization controller according to the synchronization error system, and applying the synchronization controller to each node of the second memristor complex-valued network to control each node to be synchronized with the target synchronization state. The method realizes the complete synchronization of nodes in the memristor complex-valued network and improves the security of confidential communication.

Description

Technical Field

[0001] The present invention belongs to the field of information security technology, and in particular relates to a complete synchronization control method and device of a memristor complex-valued network. Background Art

[0002] In the modern digital world, data protection and privacy are of vital importance. Therefore, the research on methods and technologies for protecting these sensitive data has become an important challenge, and encryption technology has emerged as a result. At present, chaos synchronization technology is a very effective encryption technology. The core idea of ​​chaos synchronization technology is to use the highly random characteristics of chaotic phenomena to ensure the secure transmission of data. Compared with traditional encryption methods, it does not require the use of fixed codebooks or complex algorithms, and has great advantages in data transmission and practical applications, while greatly reducing problems such as codebook leakage and configuration management.

[0003] However, the existing chaotic synchronization methods still have some defects in data encryption applications, such as: ① In the traditional chaotic synchronization system, the initial state of the system is very sensitive. As long as the initial state deviates, the entire synchronization system will lose synchronization. ② In complex chaotic synchronization systems, phenomena such as "self-synchronization" and "chaos injection" are prone to occur, which will lead to errors and instability in the system synchronization process. ③ Chaotic synchronization systems have defects such as poor real-time performance and poor reliability in actual complex environment applications. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention proposes a method and device for fully synchronizing a memristor complex-valued network, which achieves full synchronization of nodes in the memristor complex-valued network and improves the security of confidential communications.

[0005] In order to achieve the above object, the present invention provides a complete synchronization control method of a memristor complex-valued network, comprising the following steps:

[0006] Taking the complex Lorentz system as a node, a first memristor complex-valued network formed by a plurality of nodes being ring-coupled is constructed, wherein a first node and a second node among the plurality of nodes are connected via a memristor, and the remaining nodes, and the remaining nodes and the first node and the second node are linearly coupled;

[0007] Adding a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network;

[0008] Determining a synchronization error system according to a difference between each node in the second memristor complex-valued network and a preset target synchronization state;

[0009] The synchronization controller is determined according to the synchronization error system, and the synchronization controller is applied to each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state.

[0010] In one embodiment, the plurality of nodes are three nodes, including the first node, the second node, and a third node;

[0011] The first node is connected to the second node through the memristor, and the third node is linearly coupled to the first node and the second node, thereby obtaining the first memristor complex-valued network, which includes a first system, a second system, and a third system.

[0012] In one embodiment, the first memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the first memristor complex-valued network; Corresponding to the first node, the second node, and the third node respectively, The corresponding conjugate complex numbers are , in is a complex state variable, is a real state variable; is the angle variable, and is a complex parameter, is a real constant greater than zero.

[0013] In one embodiment, the step of adding a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network includes:

[0014] Adding a first synchronization control variable to the first system to update the first system;

[0015] Adding a second synchronous control variable to the second system to update the second system;

[0016] Adding a third synchronous control quantity to the third system, updating the third system, wherein the synchronous controller includes the first synchronous control quantity, the second synchronous control quantity, and the third synchronous control quantity;

[0017] The second memristor complex-valued network is obtained according to the updated first system, second system and third system.

[0018] In one embodiment, the second memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the second memristor complex-valued network; Corresponding to the first node, the second node, and the third node respectively, The corresponding conjugate complex numbers are i=1,2, where is a complex state variable, is a real state variable; is the angle variable, and is a complex parameter, is a real constant greater than zero, They represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount respectively.

[0019] In one embodiment, a synchronization error is determined according to a difference between each node in the second memristor complex-valued network and a preset target synchronization state;

[0020] The synchronization error is added to the second memristor complex-valued network to construct the synchronization error system.

[0021] In one embodiment, the synchronization error is expressed as: in, , , is the error component; , , Respectively represent the first node, the second node, and the third node; Indicates the target synchronization status, and ,in is a complex state variable, is the corresponding conjugate complex number.

[0022] In one embodiment, the synchronization error system is expressed as: in, is the error component, ; , Corresponding to the first node, the second node, and the third node respectively, The corresponding conjugate complex numbers are , , ; is a complex state variable, is a real state variable, is the corresponding conjugate complex number; is the angle variable, and is a complex parameter, is a real constant greater than zero, , , They represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount respectively.

[0023] In one embodiment, the first synchronization control amount is expressed as: The second synchronous control quantity is expressed as: The third synchronous control quantity is expressed as: in, is a constant.

[0024] Another aspect of the present invention further provides a complete synchronization control device for a memristor complex-valued network, adopting the complete synchronization control method for a memristor complex-valued network, comprising:

[0025] A first network construction module is used to construct a first memristor complex-valued network formed by a plurality of nodes being ring-coupled, using a complex Lorentz system as a node, wherein a first node and a second node among the plurality of nodes are connected via a memristor, and the remaining nodes, as well as the remaining nodes and the first node and the second node are linearly coupled;

[0026] A second network construction module is used to add a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network;

[0027] An error module, used for determining a synchronization error system according to a difference between each node in the second memristor complex-valued network and a preset target synchronization state;

[0028] The synchronization control module is used to determine the synchronization controller according to the synchronization error system, and to apply the synchronization controller to each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state.

[0029] On the other hand, the present invention also provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the steps of the above-mentioned method for fully synchronous control of the memristor complex-valued network are implemented and the same technical effect can be achieved.

[0030] It can be seen from the above scheme that the advantages of the present invention are:

[0031] The present invention provides a complete synchronization control method for a memristor complex-valued network. The method is based on a memristor and a complex Lorenz system to construct a first memristor complex-valued network; a synchronization controller is added to the first memristor complex-valued network to obtain a second memristor complex-valued network; then, a synchronization error system is determined according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state, and then the synchronization controller is determined according to the synchronization error system, and the synchronization controller is applied to each node of the second memristor complex-valued network, so that each node is synchronized with the target synchronization state. The method can achieve complete synchronization of memristor complex-valued network nodes of a complex Lorenz system coupled by a memristor, and improve the security of confidential communication. At the same time, the synchronization controller designed by the method is linear and concise in form, which can reduce some unnecessary energy consumption generated by the node, and can effectively control the error system. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of the overall process of fully synchronous control of a memristor complex-valued network provided by the present invention;

[0033] Figure 2 is an error diagram between the first node X and the target synchronization state S when no synchronization controller is added in the second embodiment of the present invention;

[0034] Figure 3 is an error diagram between the second node Y and the target synchronization state S when the synchronization controller is not added in the second embodiment of the present invention;

[0035] Figure 4 is an error diagram between the third node Z and the target synchronization state S when no synchronization controller is added in the second embodiment of the present invention;

[0036] Figure 5 is an error diagram between the first node X and the target synchronization state S after adding a synchronization controller in the second embodiment of the present invention;

[0037] Figure 6 is an error diagram between the second node Y and the target synchronization state S after adding a synchronization controller in the second embodiment of the present invention;

[0038] Figure 7 is an error diagram between the third node Z and the target synchronization state S after adding a synchronization controller in the second embodiment of the present invention;

[0039] Figure 8 The architecture diagram of a fully synchronous control device for a memristor complex-valued network;

[0040] Wherein: 300 - fully synchronous control device of memristor complex value network;

[0041] 301-first network construction module;

[0042] 302-second network construction module;

[0043] 303-Error module;

[0044] 304-Synchronous control module. DETAILED DESCRIPTION

[0045] In order to make the above features and effects of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

[0046] Chaotic systems in the complex domain can increase the amount of information transmission, increase the key length, and improve the security of confidential communications in confidential communications. The complex Lorenz system (complex Lorenz system) with complex parameters and complex variables can describe the laser problem, and the complex-valued laser network can simulate the working mechanism of the human brain. Memristors, as important components for simulating synapses, are added to complex-valued networks to increase the complexity of the network, thereby enhancing the anti-attack ability of the transmitted signal. In this regard, in the present invention, based on memristors, complex Lorenz systems and chaotic synchronization theory, a memristor complex-valued network coupled by memristors is constructed, and a synchronization controller is designed to achieve complete synchronization control of the memristor complex-valued network, thereby improving the encryption effect.

[0047] The complete synchronization control method of the memristor complex-valued network provided by the present invention will be described in detail below.

[0048] Embodiment 1:

[0049] like Figure 1 As shown in Figure 1 The overall flow chart of the fully synchronous control method of the memristor complex-valued network is shown.

[0050] A complete synchronization control method for a memristor complex-valued network, comprising at least:

[0051] Step S1, taking the complex Lorentz system as a node, constructing a first memristor complex-valued network consisting of multiple nodes coupled in a ring, wherein a first node and a second node among the multiple nodes are connected through a memristor, and the remaining nodes, as well as the remaining nodes and the first node and the second node are linearly coupled.

[0052] In one embodiment, the multiple nodes are three nodes, including a first node, a second node, and a third node; the first node and the second node are connected through the memristor, and the third node is linearly coupled with the first node and the second node to obtain the first memristor complex-valued network, and the first memristor complex-valued network includes a first system, a second system, and a third system.

[0053] Specifically, using the complex Lorentz system as a node, the complex Lorentz system is expressed as: Using the complex Lorentz system, the first memristor complex-valued network is constructed as: in, , , The first system, the second system, and the third system included in the first memristor complex-valued network; , , Corresponding to the first node, the second node, and the third node respectively, , , The corresponding conjugate complex numbers are , i=1,2, where is a complex state variable, is a real state variable, that is is a complex state variable, x3, y3, z3 are real state variables; is the angle variable, and is a complex parameter, is a real constant greater than zero.

[0054] Step S2: adding a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network.

[0055] In this embodiment, after the first memristor complex-valued network is constructed, a synchronization controller is further added to the first memristor complex-valued network to obtain a second memristor complex-valued network.

[0056] Specifically, a first synchronization control quantity is added to the first system of the first memristor complex-valued network to update the first system; a second synchronization control quantity is added to the second system to update the second system; a third synchronization control quantity is added to the third system to update the third system, and the synchronization controller includes the first synchronization control quantity, the second synchronization control quantity, and the third synchronization control quantity; finally, the second memristor complex-valued network can be obtained based on the updated first system, the second system, and the third system.

[0057] Specifically, the second memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the second memristor complex-valued network; Corresponding to the first node, the second node, and the third node respectively, The corresponding conjugate complex numbers are , i=1,2, where x1,y1,z1,x2,y2,z2 are complex state variables, and x3,y3,z3 are real state variables; is the angle variable, and is a complex parameter, is a real constant greater than zero, They represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount respectively.

[0058] Step S3: determining a synchronization error system according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state.

[0059] In this embodiment, after the second memristor complex-valued network is constructed through the above step S2, a synchronization error system is further determined. Specifically, a synchronization error is first determined according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state; and then the synchronization error is added to the second memristor complex-valued network to construct the synchronization error system.

[0060] In one embodiment, the target synchronization state is first set to: in, , is a complex state variable, is the corresponding conjugate complex number.

[0061] Further, according to the differences between the first node, the second node, and the third node and the target synchronization state, the synchronization error is determined to be expressed as: in, is the error component; , Represent the first node, the second node, and the third node respectively.

[0062] Finally, the synchronization error system can be constructed by using the second memristor complex-valued network and the synchronization error. That is, the synchronization error system is expressed as: in, is the error component, are complex state variables, corresponding to the first node, the second node, and the third node respectively. The corresponding conjugate complex numbers are ; is a complex state variable, is the corresponding conjugate complex number, is a real state variable; is the angle variable, and is a complex parameter, is a real constant greater than zero, They represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount respectively.

[0063] Step S4: determine the synchronization controller according to the synchronization error system, and apply the synchronization controller to each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state.

[0064] In this embodiment, after the synchronization error system is determined in step S3, the synchronization controller can be further determined, and the synchronization controller is applied to each node of the second memristor complex-valued network so that each node is synchronized to the target synchronization state.

[0065] Specifically, in one embodiment, the synchronization controller is represented as: in, represents the first synchronous control quantity, represents the second synchronous control quantity, represents the third synchronous control quantity; wherein is a constant. In this embodiment, after the chaotic synchronization system is constructed through the above steps S1-S4, the chaotic synchronization system can be further used to generate a chaotic sequence as an encryption key, and the encryption key can be used to encrypt the obtained file to be encrypted. The file to be encrypted shown in this embodiment can be different information such as extracted pictures, documents, audio, video, etc. Specifically, a chaotic synchronization system can be used to generate a chaotic sequence as an encryption key to encrypt the plaintext of the encrypted file, and the key stream can be directly used to cover the plaintext, and the ciphertext is transmitted through the channel; or the plaintext and / or encryption key can be used as control parameters, and the ciphertext is obtained by iterative or reverse iterative multiple times. The receiver can use the chaotic synchronization method to extract the plaintext signal to achieve decryption. Example

[0066] This embodiment will verify whether the established chaotic synchronization system achieves complete synchronization control based on the memristor complex-valued network synchronization control method disclosed in the first embodiment through a numerical simulation method.

[0067] In this embodiment, the initial value of the memristor complex-valued network is set to: The parameters are set to The coupling strength is set to . Figure 2 is the error diagram between the first node X and the target synchronization state S when the synchronization controller is not added; Figure 3 is the error diagram between the second node Y and the target synchronization state S when the synchronization controller is not added; Figure 4 is the error diagram between the third node Z and the target synchronization state S when the synchronization controller is not added; Figure 5 is the error graph between the first node X and the target synchronization state S after adding the synchronization controller; Figure 6is the error diagram between the second node Y and the target synchronization state S after adding the synchronization controller; Figure 7 The error diagram between the third node Z and the target synchronization state S after adding the synchronization controller.

[0068] contrast Figure 2 and Figure 5 , Figure 3 and Figure 6 , Figure 4 and Figure 7 ,It can be found that under the action of the synchronization controller, the ,complete synchronization between the network nodes and the target ,synchronization state S is achieved.

[0069] In summary, the complete synchronization control method of the memristor complex valued network provided by the present invention is based on a memristor and a complex Lorenz system to construct a first memristor complex valued network; and a synchronization controller is added to the first memristor complex valued network to obtain a second memristor complex valued network; then, according to the difference between each node in the second memristor complex valued network and a preset target synchronization state, a synchronization error system is determined, and then according to the synchronization error system, the synchronization controller is determined, and the synchronization controller is applied to each node of the second memristor complex valued network, so that each node is synchronized with the target synchronization state. This method can achieve complete synchronization of the memristor complex valued network nodes of the complex Lorenz system coupled by a memristor, and improve the security of confidential communication. At the same time, the synchronization controller designed by the method is linear and concise in form, which can reduce some unnecessary energy consumption generated by the node, and can effectively control the error system.

[0070] In addition, corresponding to the embodiment of the complete synchronization control method of the aforementioned memristor complex-valued network, the present invention also provides an embodiment of a complete synchronization control device of the memristor complex-valued network.

[0071] Reference Figure 8 , Figure 8 A fully synchronous control device 300 of a memristor complex-valued network is shown, which can be implemented by Figure 1 The various processes of the fully synchronous control method of the memristor complex-valued network shown.

[0072] The fully synchronous control device 300 of the memristor complex-valued network comprises:

[0073] The first network construction module 301 is used to construct a first memristor complex-valued network consisting of a plurality of nodes coupled in a ring shape using a complex Lorentz system as a node, wherein a first node and a second node among the plurality of nodes are connected via a memristor, and the remaining nodes, as well as the remaining nodes and the first node and the second node are linearly coupled.

[0074] The second network construction module 302 is used to add a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network.

[0075] The error module 303 is used to determine a synchronization error system according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state.

[0076] The synchronization control module 304 is used to determine the synchronization controller according to the synchronization error system, and apply the synchronization controller to each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state.

[0077] In addition, it should be understood that in the fully synchronous control device 300 of the memristor complex-valued network according to the embodiment of the present application, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the fully synchronous control device 300 of the memristor complex-valued network can be divided into functional modules different from the modules illustrated above to complete all or part of the functions described above.

[0078] In addition, according to an embodiment of the present invention, the present invention also provides an electronic device, including a processor, a memory, and a program or instruction stored in the memory and executable on the processor, which, when executed by the processor, implements the steps of the above-mentioned method for fully synchronous control of the memristor complex-valued network and can achieve the same technical effect.

[0079] In addition, according to an embodiment of the present invention, the present invention also provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the steps of the above-mentioned method for fully synchronous control of the memristor complex-valued network are implemented, and the same technical effect can be achieved.

[0080] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be applied, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0081] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method.

[0082] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A complete synchronization control method for a memristor complex-valued network, characterized in that: Include: A first memristor complex-valued network is constructed by using a complex Lorentz system as a node and being formed by a plurality of nodes being coupled in a ring; wherein the plurality of nodes include a first node, a second node, and a third node, wherein the first node is connected to the second node through the memristor, and the third node is linearly coupled to the first node and the second node, thereby obtaining the first memristor complex-valued network, wherein the first memristor complex-valued network includes a first system, a second system, and a third system; A synchronization controller is added to the first memristor complex-valued network to obtain a second memristor complex-valued network, comprising: Adding a first synchronization control variable to the first system to update the first system; Adding a second synchronous control variable to the second system to update the second system; Adding a third synchronous control quantity to the third system, updating the third system, wherein the synchronous controller includes the first synchronous control quantity, the second synchronous control quantity, and the third synchronous control quantity; According to the updated first system, second system and third system, the second memristor complex-valued network is obtained, and the second memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the second memristor complex-valued network; x i ,y i ,z i Corresponding to the first node, the second node, and the third node respectively, x i ,y i ,z i The corresponding conjugate complex numbers are where x i ,y i ,z i (i=1,2) is a complex state variable, x i ,y i ,z i (i=3) is a real state variable; is the angle variable, a=1-jδ and c=r1-jr2 are complex parameters, δ, r1, r2, k1, k2, k2, b are real constants greater than zero, Respectively represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount; According to the difference between each node in the second memristor complex-valued network and a preset target synchronization state, a synchronization error system is determined, and the synchronization error system is expressed as: Among them, e i1 ,e i2 ,e i3 is the error component, s i (i=1,2) is a complex state variable, is the corresponding conjugate complex number, s i (i=3) is a real state variable; According to the synchronization error system, the synchronization controller is determined, wherein the first synchronization control quantity is expressed as: The second synchronous control quantity is expressed as: The third synchronous control quantity is expressed as: in, is a constant; The synchronization controller acts on each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state.

2. The complete synchronization control method of a memristor complex-valued network according to claim 1, characterized in that: The first memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the first memristor complex-valued network; x i ,y i ,z i Corresponding to the first node, the second node, and the third node respectively, x i ,y i ,z i The corresponding conjugate complex numbers are i=1,2,3, where x i ,y i ,z i (i=1,2) is a complex state variable, x i ,y i ,z i (i=3) is a real state variable; is the angle variable, a=1-jδ and c=r1-jr2 are complex parameters, δ, r1, r2, k1, k2, k2, b are real constants greater than zero.

3. The complete synchronization control method of a memristor complex-valued network according to claim 1, characterized in that: Determining a synchronization error according to a difference between each node in the second memristor complex-valued network and a preset target synchronization state; The synchronization error is added to the second memristor complex-valued network to construct the synchronization error system.

4. The complete synchronization control method of a memristor complex-valued network according to claim 3, characterized in that: The synchronization error is expressed as: Among them, E i =(e i1 ,e i2 ,e i3 ) T , i=1,2,3,e i1 ,e i2 ,e i3 is the error component; X=(x1,x2,x3) T , Y=(y1,y2,y3) T , Z=(z1,z2,z3) T Respectively represent the first node, the second node, and the third node; Indicates the target synchronization status, and where s i (i=1,2) is a complex state variable, is the corresponding conjugate complex number, s i (i=3) is a real state variable.

5. A fully synchronous control device for a memristor complex-valued network, characterized in that: The method for fully synchronously controlling a memristor complex-valued network according to any one of claims 1 to 4 is characterized by comprising: A first network construction module is used to construct a first memristor complex-valued network formed by a plurality of nodes being ring-coupled, using a complex Lorentz system as a node, wherein: the plurality of nodes include a first node, a second node, and a third node, wherein the first node is connected to the second node through the memristor, and the third node is linearly coupled to the first node and the second node, thereby obtaining the first memristor complex-valued network, and the first memristor complex-valued network includes a first system, a second system, and a third system; The second network construction module is used to add a synchronization controller to the first memristor complex-valued network to obtain a second memristor complex-valued network, comprising: Adding a first synchronization control variable to the first system to update the first system; Adding a second synchronous control variable to the second system to update the second system; Adding a third synchronous control quantity to the third system, updating the third system, wherein the synchronous controller includes the first synchronous control quantity, the second synchronous control quantity, and the third synchronous control quantity; According to the updated first system, second system and third system, the second memristor complex-valued network is obtained, and the second memristor complex-valued network is expressed as: in, The first system, the second system, and the third system included in the second memristor complex-valued network; x i ,y i ,z i Corresponding to the first node, the second node, and the third node respectively, x i ,y i ,z i The corresponding conjugate complex numbers are where x i ,y i ,z i (i=1,2) is a complex state variable, x i ,y i ,z i (i=3) is a real state variable; is the angle variable, a=1-jδ and c=r1-jr2 are complex parameters, δ, r1, r2, k1, k2, k2, b are real constants greater than zero, Respectively represent the first synchronous control amount, the second synchronous control amount, and the third synchronous control amount; The error module is used to determine a synchronization error system according to the difference between each node in the second memristor complex-valued network and a preset target synchronization state. The synchronization error system is expressed as: Among them, e i1 ,e i2 ,e i3 is the error component, s i (i=1,2) is a complex state variable, is the corresponding conjugate complex number, s i (i=3) is a real state variable; A synchronization control module is used to determine the synchronization controller according to the synchronization error system, and to apply the synchronization controller to each node of the second memristor complex-valued network to control each node to be synchronized to the target synchronization state; wherein the first synchronization control amount is expressed as: The second synchronous control quantity is expressed as: The third synchronous control quantity is expressed as: in, is a constant.

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