Heating device and semiconductor processing equipment

Abstract

The invention discloses a heating device and semiconductor processing equipment, and the heating device is located at one side of a pedestal, and is provided with a central region and a plurality of annular regions. Each annular area comprises a plurality of heating lamps evenly arranged in the circumferential direction of the annular area and an annular reflecting plate located on the sides, away from the base, of the heating lamps. Each annular area further comprises a reflection assembly located on the side, close to the center area, of the annular area. The reflecting assembly comprises a plurality of reflecting plates which are in one-to-one correspondence with the plurality of heating lamps in the corresponding annular area; the reflecting plate extends from the annular reflecting plate to the base so as to limit the light of the corresponding heating lamp to irradiate in a preset area of the base; the reflection assembly is used for enabling the preset areas corresponding to the multiple heating lamps to be located in different radial ranges of the base. According to the application, light rays can be prevented from being intensively irradiated in the same area, so that illumination is distributed in a cliff manner along the radius direction, the gradual change of illumination intensity is realized, and the heating uniformity can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, and in particular to a heating device and semiconductor processing equipment. Background Art

[0002] Chemical Vapor Deposition (CVD) silicon epitaxy is the process of growing a silicon film on a silicon-based substrate (such as a wafer) using CVD technology. Specifically, the reaction gas is controlled to flow through the heated wafer, and the reactants react chemically on the wafer surface to generate silicon, thereby forming a silicon film on the wafer surface.

[0003] A schematic diagram of the structure of an existing CVD epitaxial device is shown in FIG. Figure 1 As shown, the top plate and the bottom plate of the process chamber 10a are made of transparent materials, and the upper heating device 20a and the lower heating device 30a based on infrared light heating are respectively arranged on the upper and lower sides of the process chamber 10a. The substrate 101a is placed on the susceptor 11a in the process chamber 10a, the upper heating device 20a directly heats the surface of the substrate 101a, and the lower heating device 30a heats the susceptor 11a to indirectly heat the substrate 101a.

[0004] The temperature distribution on the surface of the substrate 101a has a significant impact on the thickness, resistivity, and slip line distribution of silicon epitaxy. The epitaxial layer growth rate is high in the area with high temperature, and its thickness is relatively thick. In the process of heating the substrate 101a, since the lower heating device 30a directly heats the base 11a, and the substrate 101a is indirectly heated by heat conduction through the base 11a, the heat is distributed more evenly during the conduction process. The light of the upper heating device 20a directly irradiates the substrate 101a, and the light distribution of the upper heating device 20a will play a leading role in the temperature distribution on the surface of the substrate 101a.

[0005] The existing upper heating device 20a is generally composed of multiple heating lamps 21a. By arranging a reflecting plate 22a around the heating lamp 21a, the light emitted by the heating lamp 21a is directed to the surface of the substrate 101a. The reflecting plate 22a will enhance the light at certain radii due to reflection, and weaken the light at other radii due to shielding. The above phenomenon will cause at a specific radial position, there is an obvious difference in light on both sides of the position, resulting in a large local temperature difference and an uneven temperature field on the surface of the substrate 101a. Summary of the invention

[0006] In view of the above technical problems, the present application provides a heating device and a semiconductor processing equipment, which can improve the problem of uneven temperature field generated by the existing upper heating device.

[0007] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides a heating device for heating a susceptor in a semiconductor chamber, wherein the heating device is located on one side of the susceptor, and the heating device has a central area and a plurality of annular areas sequentially surrounding the central area from the central area outward;

[0008] Each of the annular areas comprises a plurality of heating lamps uniformly arranged along the circumference of the annular area and an annular reflecting plate located on a side of the plurality of heating lamps away from the base;

[0009] For each of the annular regions, the heating device further comprises a reflection component located on a side of the annular region close to the central region; the reflection component comprises a plurality of reflection plates corresponding one to one to the plurality of heating lamps in the corresponding annular region;

[0010] The reflective plate extends from the annular reflective plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of ​​the base;

[0011] The reflective assembly is used to make the preset areas corresponding to the multiple heating lamps located within different radial ranges of the base; wherein the central axis of the annular area is coaxial with the central axis of the base.

[0012] Optionally, each of the reflective plates in the reflective assembly is parallel to the central axis of the base; or,

[0013] The included angles between each of the reflective plates and the central axis of the base are the same.

[0014] Optionally, the plurality of heating lamps in the same annular area have the same height;

[0015] When heated by the heating lamp, the distance between one end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the multiple reflector plates belonging to the same reflector assembly are not completely the same.

[0016] Optionally, in the same reflective assembly, the first heights of any two adjacent reflective plates are different.

[0017] Optionally, the heating device further includes a driver for adjusting the lifting and lowering of each of the reflecting plates.

[0018] Optionally, the plurality of heating lamps in the same annular area have the same height;

[0019] When heated by the heating lamp, the distance between one end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the multiple reflectors belonging to the same reflector assembly are the same;

[0020] In each of the reflective components, at least a portion of the reflective plates are provided with light-through holes, and the distance between the light-through holes and the base is smaller than the distance between the corresponding heating lamps and the base.

[0021] Optionally, in each of the reflective components, distances between two adjacent light-through holes and the base are different.

[0022] Optionally, in two adjacent annular areas, at the same radius, the distance between the heating lamp in the outer annular area and the base is smaller than the distance between the heating lamp in the inner annular area and the base.

[0023] Optionally, in two adjacent annular areas, on the same radius, the first height of the reflective plate in the outer annular area is smaller than the first height of the reflective plate in the inner annular area.

[0024] Optionally, in each of the annular regions, the reflective components are symmetrical about the center of the annular region.

[0025] Optionally, the heating device further comprises a circular reflecting plate arranged in the central area, and the reflecting assembly located in the innermost annular area is arranged around the circular reflecting plate;

[0026] Furthermore, the distance between the circular reflective plate and the base is greater than the first height of any reflective plate in the reflective assembly located in the innermost annular area.

[0027] In a second aspect, an embodiment of the present application provides a semiconductor processing device, comprising a semiconductor chamber, and also comprising a heating device as described in the above embodiments located above and / or below the semiconductor chamber, wherein the heating device is used to heat a base in the semiconductor chamber during the process.

[0028] As described above, in the heating device of the present application, the annular reflector is arranged on the side of the heating lamp away from the base, and the reflector assembly is arranged on the side of the annular area close to the central area. The heating lamp is surrounded and reflected by the annular reflector and the reflector assembly, and irradiates in the direction of the base to heat the base. The light emitted downward by the entire heating device tends to form a plurality of apertures, which can realize independent control of the light intensity at different radial positions. Since the reflector assembly includes a plurality of reflectors corresponding to the plurality of heating lamps in the corresponding annular area, the reflector extends from the annular reflector toward the base, and each reflector can limit the light of the corresponding heating lamp to the preset area of ​​the base, so that the same circle of heating lamps can be irradiated to positions of different radii, avoiding the light from being concentrated in the same area and causing the light to be distributed in a cliff-like manner along the radial direction, so that a gradual change in light intensity can be realized, thereby improving the uniformity of heating. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0030] Figure 1 It is a structural schematic diagram of an existing CVD epitaxial device;

[0031] Figure 2 It is a structural schematic diagram (bottom view) of an upper heating device provided in a comparative example of the present application;

[0032] Figure 3 It is a structural schematic diagram (bottom view) of a heating device provided in an embodiment of the present application;

[0033] Figure 4 yes Figure 3 An expanded cross-sectional view of the reflective assembly corresponding to the middle and outer ring heating lamps;

[0034] Figure 5 yes Figure 3 A side view structural schematic diagram of;

[0035] Figure 6 is a structural schematic diagram of a semiconductor processing device provided in an embodiment of the present application;

[0036] Figure 7 This is a schematic diagram of a structure in which notches of different depths are arranged on a reflective plate provided in an embodiment of the present application;

[0037] Figure 8is a schematic diagram of a top view structure of a reflective assembly provided in an embodiment of the present application;

[0038] Fig. 9 It is a structural schematic diagram of a reflector provided in an embodiment of the present application with light-through holes of different heights arranged thereon;

[0039] Fig.10 yes Figure 5 Expanded cross-sectional view of the reflective components corresponding to the middle and outer ring heating lamps.

[0040] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0041] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0042] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0043] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0044] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0045] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0046] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0047] See also Figure 2 , Figure 2 This is a schematic diagram of the structure of an upper heating device provided in the comparative example of this application (bottom view). Please also refer to Figure 1The upper heating device 20a includes a reflective plate 22a arranged parallel to the base 11a of the process chamber 10a, and a plurality of heating lamps 21a arranged below the reflective plate 22a. The reflective plate 22a can reflect the light emitted upward by the heating lamps 21a downward to improve the heating efficiency and the effective utilization rate of light. All the heating lamps 21a can be arranged in a circle, and a bevel structure is set on the reflective surface of the reflective plate 22a for every three heating lamps 21a, so that the reflected light of a heating lamp 21a (distinguished by a section line) corresponding to the bevel structure can be irradiated to the central area of ​​the substrate 101a to adjust the distribution of light.

[0048] In the upper heating device 20a, the only adjustable light is the reflected light of the heating lamp 21a corresponding to the inclined structure. This solution can only adjust the temperature field slightly, and the process range that can be covered is small. Based on this, the present application provides a heating device and semiconductor processing equipment with adjustable temperature field distribution.

[0049] See also Figure 3-Figure 5 , Figure 3 is a schematic diagram of the structure of a heating device provided in an embodiment of the present application (bottom view), Figure 4 yes Figure 3 Expanded cross-sectional view of the reflector assembly corresponding to the middle and outer ring heating lamps. Figure 5 yes Figure 3 The heating device is used to heat the base in the semiconductor chamber and is arranged on one side of the base. For example, please combine Figure 6 The heating device may be disposed outside the semiconductor chamber 100 or inside the semiconductor chamber 100 . The heating device may be disposed directly above the susceptor 130 , directly below the susceptor 130 , or both above and below the susceptor 130 .

[0050] The heating device has a central area 301 and a plurality of annular areas 302 that surround the central area 301 in sequence from the central area outward; wherein; each annular area 302 includes a plurality of heating lamps 40 evenly arranged along the circumference of the annular area 302 and an annular reflecting plate 10 located on the side of the plurality of heating lamps 40 away from the base 130; for each annular area 302, the heating device also includes a reflecting component 30 located on the side of the annular area close to the central area 301; the reflecting component 30 includes a plurality of reflecting plates 31 corresponding one by one to the plurality of heating lamps 40 in the corresponding annular area 302; the reflecting plates 31 extend from the annular reflecting plate 10 toward the direction of the base 130 to limit the light irradiation of the corresponding heating lamps 40 to the preset area of ​​the base 130; the reflecting component 30 is used to make the preset areas corresponding to the plurality of heating lamps 40 located within different radial ranges of the base; wherein the central axis of the annular area 302 is coaxial with the central axis of the base.

[0051] Take two annular areas 302 (302A and 302B) as an example, which are an outer annular area 302A and an inner annular area 302B. A plurality of heating lamps 40 are respectively arranged in the two annular areas 302. For example, 32 heating lamps 40A can be evenly arranged in the outer annular area 302A, and 8 heating lamps 40B can be evenly arranged in the inner annular area 302B. In specific applications, the number of heating lamps 40 arranged in each annular area 302 is set according to the heating needs. As an example, the heating lamp 40 can be an infrared heating lamp.

[0052] Correspondingly, two annular reflection plates 10 (10A and 10B) can also be provided. The annular reflection plate 10A on the side where the heating lamp 40A is away from the base 130 can reflect the light of the heating lamp 40A to the corresponding area of ​​the base 130, and the annular reflection plate 10B on the side where the heating lamp 40B is away from the base 130 can reflect the light of the heating lamp 40B to the corresponding area on the base 130.

[0053] Correspondingly, two reflective components 30 are also provided (30A and 30B), the reflective component 30B is provided on the side of the inner ring area 302B close to the central area 301, and the reflective component 30A is provided on the side of the outer ring area 302A close to the central area 301.

[0054] The reflective assembly 30 includes a plurality of reflective plates 31 corresponding to the plurality of heating lamps 40 in the corresponding annular area 302. For example, when 32 heating lamps 40A are provided in the outer annular area 302A, the reflective assembly 30A includes 32 reflective plates 31, and when 8 heating lamps 40B are provided in the inner annular area 302B, the reflective assembly 30B includes 8 reflective plates 31. The reflective plates 31 extend from the annular reflective plate 10 toward the base 130 to limit the light of the corresponding heating lamp 40 to be irradiated within a preset area of ​​the base 130. That is, the reflective plates 31 can limit the irradiation range of the heating lamp 40 to the central area of ​​the base 130 from the inside, and finally make the light of the plurality of heating lamps 40 irradiate within different radial ranges of the base 130.

[0055] The working principle of the heating device of this embodiment is as follows: the annular reflector plate 10 is arranged on the side of the heating lamp 40 away from the base 130, and the reflector assembly 30 is arranged on the side of the annular region 302 close to the central region 301. The heating lamp 40 is surrounded and reflected by the annular reflector plate 10 and the reflector assembly 30, and irradiates in the direction of the base 130 to heat the base 130. The light emitted downward by the entire heating device tends to form a plurality of apertures, and the independent control of the light intensity at different radial positions can be achieved. Since the reflector assembly 30 includes a plurality of reflectors 31 corresponding to the plurality of heating lamps 40 in the corresponding annular region 302, and the reflector 31 extends from the annular reflector plate 10 toward the base 130, each reflector plate 31 can limit the light of the corresponding heating lamp 40 to be irradiated within the preset area of ​​the base 130, so that the same circle of heating lamps 40 can be irradiated to positions of different radii, avoiding the light from being concentrated in the same area and making the light distributed in a cliff-like manner along the radial direction, so that the gradual change of the light intensity can be achieved, and the uniformity of heating can be improved.

[0056] It is understandable that, for the outermost annular area 302, a reflective component 30 may be disposed around its outer diameter to confine the light of the heating lamp 40 within the heating device.

[0057] In this embodiment, the angle of the reflective assembly 30 in the vertical direction is not limited. As some examples, each reflective plate 31 in the reflective assembly 30 can be parallel to the central axis of the base 130, or can have the same angle with the central axis of the base 130, for example, each reflective plate 31 is inclined from top to bottom to the central axis of the base 130 at a preset angle (such as 10°), or is inclined away from the central axis of the base 130 at a preset angle. Combined with the vertical length setting of the reflective plate 31, the installation height setting of the heating lamp 40, etc., it can be achieved that the same circle of heating lamps 40 irradiate positions of different radii of the base 130. The present application is further described in detail with specific embodiments below.

[0058] In one embodiment, please refer to Figure 4 and Figure 5 , the heights of the multiple heating lamps 40 in the same annular area 302 are the same. The distance between the end of the reflector 31 close to the base 130 and the base 130 when the heating lamp 40 is heating is the first height H of the reflector 31. The first heights H of the multiple reflectors 31 in the same reflective assembly 30 are not completely the same. For example, Figure 4The first height difference H0 between the middle reflector 31B and the reflector 31A forms a notch 311 on the reflector assembly 30. The heating lamp 40 corresponding to the reflector 31A can irradiate the positions of different radii of the base 130 through the notch 311 to achieve a gradual change of the light intensity on the radius. By setting the first height H of each reflector 31 to form a plurality of notches 311, the reflector assembly 30 can be formed as follows: Figure 4 The sawtooth structure shown, for example, in the same annular area 302, a notch 311 is set for every other heating lamp 40A, and the notch 311 and the projection of the corresponding heating lamp 40A in the annular area 302 are located on the same radius. As the depth dimension H0 of the notch 311 is different, the irradiation radius is also different. The setting of the notch 311 on the second annular reflector 30 can expand the irradiation radius range of the heating lamp 40A, realize the gradual change of the light intensity, and improve the uniformity of heating.

[0059] It should be noted that the reflective assembly 30 may be an integrated structure, or may be formed by sequentially splicing a plurality of reflective panels 31. Figure 8 By setting the lengths of two adjacent reflective plates 31 in the vertical direction to be unequal, a gap 311 can be formed. The embodiment of the present application does not specifically limit the specific molding method of the reflective assembly 30.

[0060] It should be emphasized that the depth H0 of the notch 311 can be different by setting the shape and height of the reflector 31, and the position of the notch 311 on the reflector assembly 30 can also be random and not periodic. The shape of the notch 311 is not limited to the rectangular shape shown in the figure, for example, it can also be a triangle, an arc, or a combination of different shapes, etc.

[0061] Preferably, in the same reflective assembly 30, the first height H of any two adjacent reflective plates 31 is different, which can form a regular sawtooth structure to improve the uniformity of heating. In addition, in each annular area 302, the reflective assembly 30 is preferably symmetrical about the center of the annular area 302, so that the heating lamps 40 located at symmetrical positions can heat the same radius range of the base 130, so that the illumination range can be symmetrically adjusted to improve the uniformity of the temperature field.

[0062] As an example, in two adjacent annular areas 302, on the same radius, the first height of the reflector 31 of the outer annular area 302 is smaller than the first height of the reflector 31 of the inner annular area 302. This can prevent the heating lamp 40 from radiating outwards and reducing heating efficiency.

[0063] In one embodiment, please refer to Figure 5In two adjacent annular areas 302, at the same radius, the distance L between the heating lamps 40 in the outer annular area 302 and the base 130 is smaller than the distance L between the heating lamps 40 in the inner annular area 302 and the base 130. Since the position close to the center of the base 130 will be irradiated by more heating lamps 40, the inner heating lamps 40 are set farther from the base 130 to balance the uneven heating, thereby improving the heating uniformity of the base 130.

[0064] In one embodiment, please refer to Figure 3 and Figure 5 The heating device may further include a circular reflective plate 20 disposed in the central area 301, the reflective assembly 30 located in the innermost annular area 302 is disposed around the circular reflective plate 20, and the distance S between the circular reflective plate 20 and the base 130 is greater than the first height H of any reflective plate 31 in the reflective assembly 30 located in the innermost annular area 302. By arranging the circular reflective plate 20 at a higher position, the obstruction of the heating lamp in the inner annular area 302 by the circular reflective plate 20 can be reduced.

[0065] For ease of description, see Figure 6 and Figure 7 , Figure 6 is a schematic structural diagram of a semiconductor processing device provided in an embodiment of the present application, Figure 7 It is a structural schematic diagram of a reflective plate with notches of different depths provided in an embodiment of the present application, and the heating device of the present application is applied to the semiconductor processing equipment. The surface at a preset distance L0 directly below the circular area of ​​the annular reflective plate 10 is set as the target plane 102. When applied, the target plane 102 can be the top surface of the part to be heated (such as a substrate), that is, after the part to be heated is loaded onto the base 130, the distance between the top surface of the part to be heated and the bottom surface of the annular reflective plate 10 is L0. The point on the target plane 102 that is directly opposite to the center of the annular area 302 is set as the center point O, and the intersection of the light emitted by the heating lamp 40 corresponding to the notch 311 through the notch 311 and the target plane 102 is set as the target point A. As some examples, for example, the depth of at least one notch 311 satisfies: the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on the same side of the center point O, such as Figure 7 As shown in the middle view a. As mentioned above, the notches 311 are preferably arranged in pairs symmetrically relative to the center point O. The figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through their respective corresponding notches 311. Through the notches 311, the irradiation radius of the corresponding heating lamp 40 can be expanded toward the center point O to avoid all light irradiating on the same radius, thereby achieving a gradual change in light intensity.

[0066] For another example, the depth of at least one notch 311 may satisfy that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on both sides of the center point O, such as Figure 7 Similarly, the figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through the corresponding notches 311. Since the notches 311 are deep, the heating lamp 40 can irradiate to the other side of the center point O through the corresponding notches 311, which can make the heating lamp 40 have a larger irradiation radius and realize a gradual change in light intensity.

[0067] For another example, the depth of at least one notch 311 may satisfy that the target point A corresponding to the notch 311 coincides with the center point O, such as Figure 7 Similarly, the figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light to the target plane 102 through their corresponding notches 311, and the heating lamps 40 just irradiate the center point O through the corresponding notches 311, that is, the target point A coincides with the center point O.

[0068] In practical applications, the depth of the notch 311 can be Figure 7 The three setting modes corresponding to Figure a, Figure b, and Figure c are selected. One of them can be selected, or two or three can be selected for use in combination. The temperature field can be regulated by controlling the switch and power of the heating lamp 40 corresponding to different notches.

[0069] In one embodiment, see Figure 6 , the heights of the multiple heating lamps 40 belonging to the same annular area 302 are the same, and the first heights H of the multiple reflective plates 31 belonging to the same reflective assembly 30 are not exactly the same. The heating device may also include a driver 50, and the driver 50 is used to lift and lower each reflective plate 31. For example, the driver 50 may be a motor. The driver 50 may be set one-to-one with the reflective plates 31, or two heating lamps 40 in symmetrical positions may be lifted and lowered by the same driver 50. When the temperature field needs to be adjusted significantly, each reflective plate 31 may be lifted and lowered by the driver 50 to achieve a larger process coverage range.

[0070] For further information, see Figure 6 The heating device may further include a controller 60, which may individually control the switch and heating power of each heating lamp 40, thereby adjusting the temperature field in a wider range.

[0071] In one embodiment, a light hole 312 may be provided on the reflective plate 31 to change the radial irradiation range of the heating lamp. Fig. 9 and Fig.10 , Fig. 9 is a schematic diagram of a structure in which light holes of different heights are arranged on a reflector provided in an embodiment of the present application. Fig.10 yes Figure 5 The expanded cross-sectional view of the reflective assembly corresponding to the middle and outer annular areas. In this solution, the heights of the multiple heating lamps 40 belonging to the same annular area 302 are the same, and the first heights H of the multiple reflective plates 31 belonging to the same reflective assembly 30 are the same, which can simplify the manufacturing process of the reflective assembly 30; in each reflective assembly 30, at least part of the reflective plates 31 are provided with light holes 312, and the distance between the light holes 312 and the base 130 is smaller than the distance between the corresponding heating lamp 40 and the base 130, which can ensure that the light of the heating lamp 40 can pass through the corresponding light holes 312 to irradiate downwards to heat the base 130.

[0072] Fig. 9 From Figure a to Figure c, relative to Figure a, after the light holes 312A and 312B are set, the heating lamp 40 can illuminate areas of different radii on the target plane 102, and as the height of the light hole 312 increases, the irradiation radius of the heating lamp 40 also changes accordingly. The setting of the light hole 312 can expand the irradiation range of the heating lamp 40 on the target plane 102, avoid local concentrated distribution of the heating lamp 40, and irradiate on the same radius, thereby reducing the local temperature difference and realizing a gradual change in light intensity. Fig. 9 Each of the diagrams is a schematic diagram showing two symmetrically located heating lamps 40 emitting light toward the target plane 102 through their corresponding light holes 312 .

[0073] Preferably, in each reflective assembly 30, the distances between two adjacent light holes 312 and the base 130 are different, so that two adjacent heating lamps 40 can illuminate different radius ranges, realize gradual change of light intensity, and improve heating uniformity.

[0074] The present application also provides a semiconductor processing device. Figure 6The semiconductor processing equipment includes a semiconductor chamber 100, and a heating device arranged outside the semiconductor chamber 100. For example, an upper heating device 200 can be arranged above the semiconductor chamber 100, and / or a lower heating device 300 can be arranged below the semiconductor chamber 100. The upper heating device 200 and the lower heating device 300 can both adopt the heating devices described in the above embodiments. The heating device is used to heat the base 130 in the semiconductor chamber 100 during the process. As an example, the top plate 110 and the bottom plate 120 of the semiconductor chamber 100 can be made of transparent materials, such as quartz materials. A base 130 for carrying a substrate is arranged in the semiconductor chamber 100. During the process, the lower heating device 300 heats the base 130 through the bottom plate 120, and the upper heating device 200 heats the substrate through the top plate 110. The semiconductor processing equipment can be a CVD silicon epitaxial device.

[0075] For other working principles and processes of the semiconductor processing equipment of this embodiment, please refer to the description of the heating device in the aforementioned embodiment of the present invention, which will not be repeated here.

[0076] The above is a detailed introduction to a heating device and a semiconductor processing device provided by the present application. This article uses specific examples to illustrate the principle and implementation of the present application. It should be noted that in the present application, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant description of other embodiments.

[0077] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. A heating device for heating a susceptor in a semiconductor chamber, characterized in that: The heating device is located on one side of the base, and the heating device has a central area and a plurality of annular areas surrounding the central area in sequence from the central area outwards; Each of the annular areas comprises a plurality of heating lamps uniformly arranged along the circumference of the annular area and an annular reflecting plate located on a side of the plurality of heating lamps away from the base; For each of the annular regions, the heating device further comprises a reflection component located on a side of the annular region close to the central region; the reflection component comprises a plurality of reflection plates corresponding one to one to the plurality of heating lamps in the corresponding annular region; The reflective plate extends from the annular reflective plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of ​​the base; The reflective assembly is used to make the preset areas corresponding to the multiple heating lamps located within different radial ranges of the base; wherein the central axis of the annular area is coaxial with the central axis of the base.

2. The heating device according to claim 1, characterized in that Each of the reflective plates in the reflective assembly is parallel to the central axis of the base; or, The included angles between each of the reflective plates and the central axis of the base are the same.

3. The heating device according to claim 2, characterized in that: The plurality of heating lamps in the same annular area have the same height; When heated by the heating lamp, the distance between one end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the multiple reflector plates belonging to the same reflector assembly are not completely the same.

4. The heating device according to claim 3, characterized in that: In the same reflection assembly, the first heights of any two adjacent reflection plates are different.

5. The heating device according to claim 3, characterized in that: It also includes a driver for adjusting the lifting and lowering of each of the reflecting plates.

6. The heating device according to claim 2, characterized in that: The plurality of heating lamps in the same annular area have the same height; When heated by the heating lamp, the distance between one end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the multiple reflectors belonging to the same reflector assembly are the same; In each of the reflective components, at least a portion of the reflective plates are provided with light-through holes, and the distance between the light-through holes and the base is smaller than the distance between the corresponding heating lamps and the base.

7. The heating device according to claim 6, characterized in that: In each of the reflective components, the distances between two adjacent light-through holes and the base are different.

8. The heating device according to any one of claims 1 to 7, characterized in that: In two adjacent annular areas, on the same radius, the distance between the heating lamp in the outer annular area and the base is smaller than the distance between the heating lamp in the inner annular area and the base.

9. The heating device according to any one of claims 1 to 7, characterized in that: In two adjacent annular regions, on the same radius, the first height of the reflective plate in the outer annular region is smaller than the first height of the reflective plate in the inner annular region.

10. The heating device according to any one of claims 1 to 7, characterized in that: In each of the annular regions, the reflective components are symmetrical about the center of the annular region.

11. The heating device according to any one of claims 1 to 7, characterized in that: It also includes a circular reflective plate disposed in the central area, and the reflective assembly located in the innermost annular area is disposed around the circular reflective plate; Furthermore, the distance between the circular reflective plate and the base is greater than the first height of any reflective plate in the reflective assembly located in the innermost annular area.

12. A semiconductor processing device, comprising a semiconductor chamber, characterized in that: It also includes a heating device as described in any one of claims 1 to 11, which is located above the semiconductor chamber and / or below the semiconductor chamber, and the heating device is used to heat the susceptor in the semiconductor chamber during the process.

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