Pressure detection device, pressure detection method and semiconductor process equipment

Abstract

The invention discloses a pressure detection device, which comprises a film pressure sensor, a detection circuit, a temperature detector and a processor, and is characterized in that the film pressure sensor comprises a strain film, a processing circuit and a strain resistance sheet arranged on the strain film, and the resistance change of the strain resistance sheet is related to the strain of the strain film; the processing circuit is used for determining the first pressure of the environment to be measured according to the resistance variable quantity of the strain resistance sheet; the temperature detector is used for detecting the temperature of the film pressure sensor; the detection circuit is used for detecting a parameter capable of representing the resistance variable quantity of the strain resistance sheet; the processor is used for calibrating the first pressure according to the second pressure. The pressure detection device disclosed by the invention can solve the problem of inaccurate pressure detection of the pressure detection device related to the related technology. The invention also discloses a pressure detection method and semiconductor process equipment.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor process equipment, and specifically relates to a pressure detection device, a pressure detection method and semiconductor process equipment. Background Art

[0002] Semiconductor process equipment is a type of equipment that processes wafers. Different processes have different process recipes. Under normal circumstances, the pressure in the process space of semiconductor process equipment is one of the important parameters that determine the process recipe. During the process, semiconductor process equipment needs to monitor the pressure in the process space to ensure the normal progress of the process.

[0003] A semiconductor process equipment involved in the related technology uses a thin film pressure sensor to collect the pressure of the process space. The external pressure to which the strain film of the thin film pressure sensor is exposed will form pressure with the internal vacuum pressure and then cause deformation. This deformation will cause the strain resistor installed on the strain film to deform, thereby causing the resistance of the strain resistor to change. The change in the resistance of the strain resistor will be converted through a series of electronic devices of the thin film pressure sensor, and finally the pressure detection value will be output. However, the pressure output by the thin film pressure sensor has nonlinearity and hysteresis, and the measured pressure detection value will be inaccurate due to temperature changes, aging of the circuit in the thin film pressure sensor, output voltage decay, etc., which will affect the accurate monitoring of the process. Summary of the invention

[0004] The present invention discloses a pressure detection device and a control method thereof, and semiconductor process equipment, so as to solve the problem that semiconductor process equipment involved in the related art uses a thin film pressure sensor to detect the pressure of a process space, resulting in inaccurate detection results.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0006] In a first aspect, an embodiment of the present application discloses a pressure detection device, the disclosed pressure detection device includes a thin film pressure sensor, a detection circuit, a temperature meter and a processor, wherein:

[0007] The thin film pressure sensor includes a strain film, a processing circuit and a strain resistor sheet arranged on the strain film, the change of the resistance of the strain resistor sheet is related to the strain of the strain film, and the processing circuit is used to determine the first pressure of the environment to be measured according to the resistance change of the strain resistor sheet;

[0008] The temperature detector is used to detect the temperature of the thin film pressure sensor;

[0009] The detection circuit is used to detect a parameter that can characterize the resistance change of the strain resistor;

[0010] The processor is used to determine the resistance change of the strain resistor according to the parameter, determine the first resistance change component according to the temperature and the relationship between the preset temperature and the change in the resistance of the strain resistor, determine the second resistance change component by subtracting the first resistance change component from the resistance change, determine the second pressure according to the second resistance change component, and calibrate the first pressure according to the second pressure.

[0011] In a second aspect, an embodiment of the present application discloses a semiconductor process equipment, wherein the disclosed semiconductor process equipment comprises a reaction chamber and the pressure detection device described in the first aspect;

[0012] The pressure detection device is used to detect the pressure in the reaction chamber.

[0013] In a third aspect, an embodiment of the present application discloses a pressure detection method applied to the pressure detection device described in the first aspect, the pressure detection method comprising:

[0014] Controlling the thin film pressure sensor to obtain a first pressure of the environment to be measured, the thermometer detecting the temperature of the thin film pressure sensor, and the detection circuit detecting a parameter that can characterize a resistance change of the strain resistor;

[0015] Determine the resistance change of the strain resistor according to the parameter;

[0016] Determine a first resistance change component according to the temperature and a relationship between a preset temperature and a change in resistance of the strain resistor;

[0017] determining a second resistance change component by subtracting the first resistance change component from the resistance change amount;

[0018] determining a second pressure according to the second resistance change component;

[0019] The first pressure is calibrated according to the second pressure.

[0020] The technical solution adopted by the present invention can achieve the following technical effects:

[0021] The pressure detection device disclosed in the embodiment of the present application detects the temperature of the thin film pressure sensor and the parameter used to characterize the resistance change of the strain resistor by setting a thermometer and a detection circuit, and then can determine the first resistance change component according to the relationship between the temperature and the change in the resistance of the strain resistor caused by the temperature, and then can determine the second resistance change component of the strain resistor caused by the strain alone according to the first resistance change component and the resistance change, so as to remove the adverse effect of the first resistance change caused by the temperature on the detection result, thereby determining the second pressure according to the second resistance change component, and finally calibrating the first pressure according to the second pressure to obtain a more accurate pressure of the environment to be measured. The pressure detection device disclosed in the embodiment of the present application can solve the problem of inaccurate pressure detection in the pressure detection device involved in the related art.

[0022] At the same time, in the pressure detection device disclosed in the embodiment of the present application, the strain resistor included in the thin film pressure sensor is not only a part of the thin film pressure sensor, but can also cooperate with the detection circuit to enable the detection circuit to detect parameters that can characterize the resistance change of the strain resistor, thereby making the strain resistor serve two purposes. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic structural diagram of a pressure detection device disclosed in an embodiment of the present application;

[0024] Figure 2 is a schematic diagram of a partial structure of a thin film pressure sensor disclosed in an embodiment of the present application at other viewing angles;

[0025] Figure 3 It is a schematic diagram of the structure of the bridge circuit;

[0026] Figure 4 It is a flow chart of the pressure detection method disclosed in the embodiment of the present application.

[0027] Description of reference numerals:

[0028] 10-thin film pressure sensor, 11-strain film, 12-processing circuit, 13-strain resistor,

[0029] 20-detection circuit, 30-temperature detector, 40-processor, 21-connection line, 22-voltage detector,

[0030] 131 - first resistor, 132 - second resistor, 133 - third resistor, 134 - fourth resistor, 135 - first input terminal, 136 - second input terminal. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0032] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0033] The embodiment of the present application discloses a pressure detection device. The disclosed pressure detection device can be applied to semiconductor process equipment. The pressure detection device disclosed in the embodiment of the present application is further improved based on the thin film pressure sensor, and can ultimately obtain a relatively accurate pressure of the environment to be tested (such as the process space of the semiconductor process equipment).

[0034] Please refer to Figures 1 to 4 The pressure detection device disclosed in the embodiment of the present application includes a thin film pressure sensor 10, a detection circuit 20, a temperature meter 30 and a processor 40.

[0035] The thin film pressure sensor 10 is the main component of the pressure detection device, and the thin film pressure sensor 10 sold on the market can be directly used. The thin film pressure sensor 10 includes a strain film 11, a processing circuit 12 and a strain resistor 13. The strain film 11 is made of a deformable material or structure. The pressure of the environment to be measured will force the strain film 11 to deform, thereby generating a certain amount of strain, so the strain of the strain film 11 will reflect the pressure of the environment to be measured.

[0036] The strain resistor 13 is disposed on the strain film 11, and can deform along with the strain film 11. In other words, when the strain film 11 deforms and generates a certain amount of strain, the deformation of the strain film 11 drives the strain resistor 13 disposed thereon to deform as well, and thus generates strain. The strain generated by the strain resistor 13 will cause the resistance of the strain resistor 13 to change, and thus it can be known that the change in the resistance of the strain resistor 13 is related to the strain of the strain film 11.

[0037] The processing circuit 12 is used to obtain the pressure of the environment to be measured by the change of the resistance of the strain resistor 13. In the embodiment of the present application, the processing circuit 12 is used to determine the first pressure of the environment to be measured based on the resistance change of the strain resistor 13. In the case where the pressure detection device is used for semiconductor process equipment, the environment to be measured can be the process space of the semiconductor process equipment, and the first pressure detected is the first pressure in the reaction chamber of the semiconductor process equipment. In this case, the first pressure of the environment to be measured is the first pressure of the process space. It should be noted that in the embodiment of the present application, the thin film pressure sensor 10 can obtain the first pressure of the environment to be measured according to the preset signal processing rules based on the resistance change of the strain resistor 13. The process and principle of the processing circuit 12 of the thin film pressure sensor 10 to determine the first pressure of the environment to be measured based on the resistance change of the strain resistor 13 is a well-known technology, which is not the invention point of the present application, so it will not be repeated.

[0038] However, the inventors found in the process of implementing the present application that in the actual detection process, the resistance change of the strain resistor 13 is not entirely affected by the strain of the strain resistor 13, but is also affected by the temperature of the thin film pressure sensor 10. If the influence of the temperature of the thin film pressure sensor 10 on the change of the resistance of the strain resistor 13 is ignored, and the change of the resistance of the strain resistor 13 is entirely attributed to the strain of the strain film 11, then the first pressure of the environment to be measured determined by the resistance change of the strain resistor 13 is not accurate.

[0039] Based on this, the pressure detection device disclosed in the embodiment of the present application includes, in addition to the thin film pressure sensor 10 , a detection circuit 20 , a temperature meter 30 and a processor 40 .

[0040] The thermometer 30 is used to detect the temperature of the thin film pressure sensor 10. The thermometer 30 may be a variety of temperature measuring devices, and the embodiment of the present application does not limit the specific type of the thermometer 30. Optionally, the thermometer 30 may be an infrared temperature measuring device.

[0041] The detection circuit 20 is used to detect parameters that can characterize the resistance change of the strain resistor 13. There can be many types of detection circuits 20, as long as the circuit can detect the resistance change of the strain resistor 13. For example, the strain resistor 13 and the detection circuit 20 can be connected in series, and the detection circuit 20 can detect the change in its resistance by measuring the current change of the strain resistor 13 under the condition of setting the detection voltage, and finally obtain the resistance change of the strain resistor 13. In this case, the parameter used to characterize the resistance change of the strain resistor 13 can be the current flowing through the strain resistor 13. Of course, the parameter used to characterize the resistance change of the strain resistor 13 detected by the detection circuit 20 is used to determine the resistance change of the strain resistor 13 in subsequent operations. Of course, in a special embodiment, the parameter used to characterize the resistance change of the strain resistor 13 can also be the resistance change itself. The embodiment of the present application does not limit the type of parameter used to characterize the resistance change of the strain resistor 13.

[0042] The processor 40 is used to determine the resistance change of the strain resistor 13 according to the parameters detected by the detection circuit 20. The processor 40 is also used to determine the first resistance change component according to the temperature and the relationship between the preset temperature and the change in the resistance of the strain resistor 13. The processor 40 is also used to determine the second resistance change component by subtracting the first resistance change component from the resistance change. The processor 40 is also used to determine the second pressure according to the second resistance change component and calibrate the first pressure according to the second pressure, so as to obtain a more accurate pressure of the environment to be measured. In the embodiment of the present application, the resistance change of the strain resistor 13 = the first resistance change component + the second resistance change component.

[0043] Optionally, the processor 40 can be connected to the thermometer 30 and the detection circuit 20 respectively, so as to obtain the temperature detected by the thermometer 30 and the parameters characterizing the resistance change of the strain resistor 13 detected by the detection circuit 20 respectively, so as to prepare for subsequent processing work.

[0044] It should be noted that, in the embodiment of the present application, the resistance change of the strain resistor 13 can be calculated by using the parameters that characterize the resistance change of the strain resistor 13. This resistance change is caused by the change in resistance caused by the temperature and the strain of the strain resistor 13. Among them, the change in resistance of the strain resistor 13 caused by temperature can be obtained through experiments. Specifically, the correspondence between the temperature and the change in resistance of the strain resistor 13 (i.e., the first resistance change component) can be obtained through experiments (i.e., the first correspondence described later), so that the processor 40 can know the first resistance change component of the strain resistor 13 caused by temperature alone based on the detected temperature and the first correspondence.

[0045] As described above, the resistance change is the amount of resistance change caused by the temperature and the strain of the strain resistor 13. Therefore, the resistance change minus the first resistance change component can obtain the resistance change of the strain resistor 13 caused by the strain of the strain resistor 13 (i.e., the second resistance change component).

[0046] Similarly, the relationship between the strain of the strain resistor 13 and the change in resistance of the strain resistor 13 (such as the second corresponding relationship described later) can be obtained through experiments, and the strain of the strain resistor 13 is known through the second corresponding relationship and the second resistance change component. After knowing the strain of the strain resistor 13, the second pressure is calculated through the strain of the strain resistor 13 through a preset rule (such as the formula described later). Of course, the second pressure can also be determined through the third corresponding relationship obtained by the experiment. The second pressure is essentially the pressure in the test environment that forces the strain resistor 13 to deform.

[0047] Specifically, a first corresponding relationship between temperature and the first resistance change component, a second corresponding relationship between the strain of the strain resistor 13 and the second resistance change component, and a third corresponding relationship between the second resistance change component and the second pressure can be pre-established through experiments, and then the second pressure of the environment to be measured can be finally determined through the first corresponding relationship, the second corresponding relationship and the third corresponding relationship.

[0048] As described above, the processor 400 is also used to calibrate the first pressure according to the second pressure. Specifically, there are multiple ways of calibration. In an optional solution, the first pressure can be replaced by the second pressure as the final detection pressure of the environment to be tested, thereby achieving the purpose of calibration. In this case, replacing the first pressure with the second pressure as the final detection pressure of the environment to be tested can make the detection result more accurate.

[0049] In another optional solution, the processor 40 can calculate the average of the first pressure and the second pressure, and use the average as the final detection pressure of the environment to be tested, so as to calibrate the first pressure. This method can average the inaccurate first pressure detected by the thin film pressure sensor 10, and use the average as the final detection pressure, thereby improving the pressure detection accuracy.

[0050] In order to make the strain resistor 13 better follow the deformation of the strain film 11, in an optional solution, the strain resistor 13 can be attached to the surface of the strain film 11 to achieve a closer connection, such as Figure 1 and Figure 2As shown, of course, this can also improve the installation stability of the strain resistor 13. Specifically, the strain resistor 13 can be attached to the strain film 11 by bonding. Of course, the embodiment of the present application does not limit the connection relationship between the strain resistor 13 and the strain film 11.

[0051] The pressure detection device disclosed in the embodiment of the present application detects the temperature of the thin film pressure sensor 10 and the parameter used to characterize the resistance change of the strain resistor 13 by setting a thermometer 30 and a detection circuit 20, respectively, and can then determine the first resistance change component according to the relationship between the temperature and the resistance change of the strain resistor 13 caused by the temperature, and then determine the second resistance change component of the strain resistor 13 caused solely by strain according to the first resistance change component and the resistance change, so as to remove the adverse effect of the first resistance change caused by temperature on the detection result, thereby determining the second pressure according to the second resistance change component, and finally calibrating the first pressure according to the second pressure to obtain a more accurate pressure of the environment to be measured. The pressure detection device disclosed in the embodiment of the present application can solve the problem of inaccurate pressure detection in the pressure detection device involved in the related art.

[0052] At the same time, in the pressure detection device disclosed in the embodiment of the present application, the strain resistor 13 included in the thin film pressure sensor 10 is not only a part of the thin film pressure sensor 10, but can also cooperate with the detection circuit 20 to allow the detection circuit 20 to detect parameters that can characterize the resistance change of the strain resistor 13, thereby making the strain resistor 13 serve two purposes.

[0053] In addition, the pressure detection device disclosed in the embodiment of the present application can ultimately determine the second pressure through the processor 40. The second pressure can be considered as the theoretical pressure. The first pressure can be calibrated by the theoretical pressure. The theoretical pressure and the first pressure output by the thin film pressure sensor 10 can be used to perform pressure fitting (for example, calculating the average). The pressure curve formed after fitting can reduce the problem of inaccurate pressure measurement caused by the nonlinearity, hysteresis, and circuit inaccuracy of the thin film pressure sensor 10.

[0054] In the embodiment of the present application, the thin film pressure sensor 10 may include one strain resistor 13, or may include multiple strain resistors 13. The embodiment of the present application does not limit the specific number of strain resistors 13 included in the thin film pressure sensor 10. In the case of including multiple strain resistors 13, the multiple strain resistors 13 may be symmetrically arranged so that the strains of the strain resistors 13 are equal.

[0055] As described above, there are many types of detection circuits 20. In an optional solution, the detection circuit 20 may include a connection line 21 and a voltage detector. The number of strain resistors 13 may be four, and the connection line 21 is used to electrically connect the four strain resistors 13 to form a bridge circuit, such as Figure 3 As shown, the input end of the bridge circuit receives the input voltage U. The voltage detector is used to detect the output voltage U of the bridge circuit. 0 , where the output voltage U 0 It is a parameter that characterizes the resistance change of the strain resistor.

[0056] In this case, the processor is used to calculate the output voltage U of the bridge circuit according to the output voltage U 0 The amount of resistance change caused by temperature and strain is calculated.

[0057] In the embodiment of the present application, when the detection circuit 20 includes four strain resistors 13, and the four strain resistors 13 are connected to form a bridge circuit, the four strain resistors 13 are respectively a first resistor 131, a second resistor 132, a third resistor 133 and a fourth resistor 134. In the bridge circuit, the four resistors are electrically connected end to end through the connecting line 21 in sequence. In other words, the first resistor 131, the second resistor 132, the third resistor 133 and the fourth resistor 134 are electrically connected end to end through the connecting line 21 in sequence to form a bridge circuit. The bridge circuit can convert the resistance change of the strain resistor 13 into a change in the output voltage.

[0058] One end of the voltage detector 22 is connected between the first resistor 131 and the second resistor 132, and the other end of the voltage detector 22 is connected between the third resistor 133 and the fourth resistor 134. The first input end 135 of the bridge circuit is connected between the first resistor 131 and the fourth resistor 134, and the second input end 136 of the bridge circuit is connected between the third resistor 133 and the second resistor 132. The voltage between the first input end 135 and the second input end 136 is the input voltage U.

[0059] After the strain resistor 13 is deformed, the resistance of the strain resistor 13 changes. According to the symmetry of the bridge circuit, the resistance changes of the four strain resistors are equal, and the output voltage of the bridge circuit will also change. The processor 40 determines the resistance change ΔR of the strain resistor 13 according to the parameters, which may include:

[0060] According to the formula U 0 / U=ΔR / R determines the resistance change ΔR of the strain resistor 13 .

[0061] The resistance values ​​of the first resistor 131, the second resistor 132, the third resistor 133 and the fourth resistor 134 before the resistance change are all equal and are all R, and the resistance changes of the first resistor 131, the second resistor 132, the third resistor 133 and the fourth resistor 134 are all equal and are all △R, U 0 is the output voltage of the bridge circuit, U is the input voltage of the bridge circuit, the input voltage U is a known quantity, and the output voltage U 0 It can be detected by a voltage detector. R is a known quantity. According to the formula U 0 △R can be calculated by using / U=△R / R.

[0062] In a further technical solution, the processor 40 is used to determine the first resistance change component according to the temperature and the relationship between the preset temperature and the change in the resistance of the strain resistor 13, including:

[0063] The first resistance change component ΔR1 of the strain resistor 13 caused solely by temperature is determined according to the formula ΔR1 / R=at.

[0064] Among them, the temperature coefficients of the first resistor 131, the second resistor 132, the third resistor 133 and the fourth resistor 134 are equal and are all a, t is temperature, and the first resistance change component of the first resistor 131, the second resistor 132, the third resistor 133 and the fourth resistor 134 caused by temperature factors is △R1.

[0065] a is related to the material of the strain resistor 13. For example, when the strain resistor 13 is a nickel alloy, a=0.007. t is the temperature of the thin film pressure sensor 10. When the temperature t is determined, a is determined after the material of the strain resistor 13 is determined, and R is a known quantity, then according to △R1 / R=at, the first resistance change component can be calculated as △R1.

[0066] As described above, the first resistance change component ΔR1 and the resistance change amount ΔR are both calculated, and then the second resistance change component ΔR2 is calculated by the formula ΔR2=ΔR-ΔR1.

[0067] In the embodiment of the present application, the processor 40 is used to determine the second pressure according to the second resistance change component, which may include:

[0068] according to and △R2 / R=(1+2μ R )* R The second pressure is calculated.

[0069] Wherein, ε is the strain of the strain film 11, r 0is the effective radius of the strain film 11, which is a known quantity; r is the distance between the center of the strain resistor 13 and the center of the strain film 11, which is a known quantity; the distance between the center of each strain resistor 13 and the center of the strain film 11 is equal, E is the elastic modulus of the strain film 11, which is a known quantity; μ is the Poisson's ratio of the strain film 11, which is a known quantity; h is the thickness of the strain film 11, which is a known quantity; P is the second pressure; the ratio of the strain of the strain resistor 13 to the strain of the strain film 11 is a preset ratio; ε R is the strain of the strain resistor 13; μ R is the Poisson's ratio of the strain resistor 13, which is a known quantity.

[0070] In the specific calculation process, it can be obtained by △R2 / R=(1+2μ R )* R The strain ε of the strain resistor 13 can be calculated R Then, the strain ε of the strain film 11 can be calculated according to the preset ratio, and finally according to The second pressure P is calculated.

[0071] As described above, the strain resistor 13 will deform along with the strain film 11, so that the strain of the strain resistor 13 is related to the strain of the strain film 11. In the embodiment of the present application, the ratio of the strain of the strain resistor 13 to the strain of the strain film 11 is a preset ratio, which may be 1. Of course, the preset ratio may also be greater than 1 or less than 1.

[0072] When the strain film 11 is a regular circle, r 0 is the radius of a regular circle; when the strain film 11 is an irregular structure, r 0 is the radius of the inscribed circle or the circumscribed circle of the irregular structure, r is the distance between the center of the strain resistor 13 and the center of the strain film 11, and when the center of the strain resistor 13 and the center of the strain film 11 are zero, r=0.

[0073] Based on the pressure detection device disclosed in the embodiment of the present application, the embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a reaction chamber and the pressure detection device described in the above embodiment. The pressure detection device is used to detect the pressure in the reaction chamber. In the specific working process, the processor 40 in the pressure detection device calibrates the first pressure according to the second pressure, so as to obtain a more accurate pressure in the reaction chamber.

[0074] Similarly, for the pressure detection device disclosed in the embodiment of this application, please refer to Figure 4 The present application embodiment discloses a pressure detection method applied to the pressure detection device described in the above embodiment. The disclosed pressure detection method includes:

[0075] S11 , controlling the thin film pressure sensor 10 to obtain a first pressure of the environment to be measured, controlling the temperature sensor 30 to detect the temperature of the thin film pressure sensor 10 , and controlling the detection circuit 20 to detect a parameter that can characterize a resistance change of the strain resistor 13 .

[0076] S12, determining the resistance change of the strain resistor 13 according to the parameters.

[0077] S13 , determining a first resistance change component according to the temperature and the relationship between the preset temperature and the change in resistance of the strain resistor 13 .

[0078] S14. Determine a second resistance change component by subtracting the first resistance change component from the resistance change.

[0079] S15. Determine a second pressure according to the second resistance change component.

[0080] S16. Calibrate the first pressure according to the second pressure.

[0081] It should be noted that the implementation process of each step of the pressure detection method disclosed in the embodiment of the present application can refer to the corresponding description of the device part in the above embodiment. Considering the simplicity of the text, it will not be repeated here. Of course, the technical effect that can be obtained by the pressure detection method disclosed in the embodiment of the present application is consistent with the pressure detection device described in the above embodiment, and it will not be repeated here.

[0082] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0083] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A pressure detection device, characterized in that: It comprises a thin film pressure sensor (10), a detection circuit (20), a temperature measuring device (30) and a processor (40), wherein: The thin film pressure sensor (10) comprises a strain film (11), a processing circuit (12), and a strain resistor (13) arranged on the strain film (11); a change in resistance of the strain resistor (13) is related to the strain of the strain film (11); and the processing circuit (12) is used to determine a first pressure of a measured environment according to a change in resistance of the strain resistor (13); The temperature detector (30) is used to detect the temperature of the thin film pressure sensor (10); The detection circuit (20) is used to detect a parameter that can characterize the resistance change of the strain resistor (13); The processor (40) is used to determine the resistance change of the strain resistor (13) according to the parameter, determine a first resistance change component according to the temperature and the relationship between a preset temperature and the change in the resistance of the strain resistor (13), determine a second resistance change component by subtracting the first resistance change component from the resistance change, determine a second pressure according to the second resistance change component, and calibrate the first pressure according to the second pressure.

2. The pressure detection device according to claim 1, characterized in that: The calibrating the first pressure according to the second pressure includes: An average of the first pressure and the second pressure is calculated, and the average is used as a final detection pressure of the environment to be tested, so as to calibrate the first pressure.

3. The pressure detection device according to claim 1, characterized in that: The thin film pressure sensor (10) comprises four strain resistors (13), and the detection circuit (20) comprises a connecting line (21) and a voltage detector (22); The connecting line (21) is used to electrically connect the four strain resistors (13) to form a bridge circuit, and the input end of the bridge circuit is used to receive an input voltage; The voltage detector (22) is used to detect the output voltage of the bridge circuit, and the output voltage is a parameter that can characterize the resistance change of the strain resistor (13).

4. The pressure detection device according to claim 3, characterized in that: The four strain resistors (13) are respectively: a first resistor (131), a second resistor (132), a third resistor (133) and a fourth resistor (134); In the bridge circuit, the first resistor (131), the second resistor (132), the third resistor (133) and the fourth resistor (134) are electrically connected end to end in sequence through the connecting line (21); One end of the voltage detector (22) is connected between the first resistor (131) and the second resistor (132), and the other end of the voltage detector (22) is connected between the third resistor (133) and the fourth resistor (134); The first input end (135) of the bridge circuit is connected between the first resistor (131) and the fourth resistor (134), and the second input end (136) of the bridge circuit is connected between the third resistor (133) and the second resistor (132); the voltage between the first input end (135) and the second input end (136) is the input voltage (U).

5. The pressure detection device according to claim 4, characterized in that: Determining the resistance change of the strain resistor (13) according to the parameter comprises: The resistance change of the strain resistor (13) is determined according to the formula U0 / U=△R / R, wherein the resistance values ​​of the first resistor, the second resistor, the third resistor and the fourth resistor before the resistance change are all equal and are all R, the resistance changes of the first resistor, the second resistor, the third resistor and the fourth resistor are all equal and are all △R, U0 is the output voltage, and U is the input voltage.

6. The pressure detection device according to claim 5, characterized in that: Determining the first resistance change component according to the temperature and the relationship between the preset temperature and the change in resistance of the strain resistor (13) comprises: The first resistance change component is determined according to the formula △R1 / R=at, the temperature coefficients of the first resistor, the second resistor, the third resistor and the fourth resistor are equal and are all a, t is the temperature, and the first resistance change component of the first resistor, the second resistor, the third resistor and the fourth resistor caused by the temperature factor is △R1.

7. The pressure detection device according to claim 6, characterized in that: The determining the second pressure according to the second resistance change component comprises: according to and △R2 / R=(1+2μ R )* R Calculate the second pressure; where ΔR2 = ΔR-ΔR1; where: ε is the strain of the strain film (11), r0 is the effective radius of the strain film (11), r is the distance between the center of the strain resistor (13) and the center of the strain film (11), the distance between the center of each strain resistor (13) and the center of the strain film (11) is equal, E is the elastic modulus of the strain film (11), μ is the Poisson's ratio of the strain film (11), h is the thickness of the strain film (11), P is the second pressure, and the ratio of the strain of the strain resistor (13) to the strain of the strain film (11) is a preset ratio; ε R is the strain of the strain resistor (13), μ R is the Poisson's ratio of the strain resistor (13).

8. The pressure detection device according to claim 7, characterized in that: The strain of the strain resistor (13) is equal to the strain of the strain film (11).

9. A semiconductor process equipment, characterized in that: A pressure detection device comprising a reaction chamber and any one of claims 1 to 8; The pressure detection device is used to detect the pressure in the reaction chamber.

10. A pressure detection method applied to the pressure detection device according to any one of claims 1 to 8, characterized in that: The pressure detection method comprises: The thin film pressure sensor (10) is controlled to obtain a first pressure of the environment to be measured, the temperature sensor (30) detects the temperature of the thin film pressure sensor (10), and the detection circuit (20) detects a parameter that can characterize the resistance change of the strain resistor (13); Determining the resistance change of the strain resistor (13) according to the parameter; Determining a first resistance change component according to the temperature and a relationship between a preset temperature and a change in resistance of the strain resistor (13); determining a second resistance change component by subtracting the first resistance change component from the resistance change amount; determining a second pressure according to the second resistance change component; The first pressure is calibrated according to the second pressure.

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