Throttle valve for substrate processing system

Abstract

A valve of a substrate processing system includes a throttle plate configured to regulate a gas flow through a gas line. An external actuator is disposed outside the gas line. An internal actuator is disposed inside the gas line and connected to the throttle plate. The outer actuator is magnetically coupled to the inner actuator. Movement of the outer actuator causes movement of the inner actuator relative to the gas line to adjust the position of the throttle plate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 346,488, filed May 27, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to substrate processing systems, and more particularly, to throttle valves for gas lines of substrate processing systems. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] The substrate processing system can be used to process substrates such as semiconductor wafers. Substrate processing can include deposition, etching, cleaning and other processing. Exemplary processes that can be performed on a substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, rapid thermal processing (RTP), ion implantation, physical vapor deposition (PVD), and / or other etching, deposition or cleaning processes.

[0005] The substrate may be disposed on a substrate support such as a susceptor, an electrostatic chuck (ESC), etc. in a processing chamber of a substrate processing system. During processing, a gas mixture including one or more precursors may be introduced into the processing chamber using a showerhead (or other gas delivery device), and a plasma may be used to initiate a chemical reaction.

[0006] Pumps and pneumatic valves are used to control the vacuum pressure in the gas line connected to the process chamber. The gas line or foreline is designed to have high conductivity for remote plasma cleaning (RPC). In some processes, the downstream valve is restricted (almost closed) to reduce the gas flow in the gas line. This causes a large pressure drop at the outlet of the valve. When the valve is in this position, the reactants / particles from the process chamber are accelerated by the pressure drop at the valve. As a result, the particles / reactants accumulate at a specific location of the gas line downstream of the valve. Over time, the gas line will eventually become clogged due to accumulation. Summary of the invention

[0007] A valve of a substrate processing system includes a throttle plate configured to adjust a gas flow through a gas line. An external actuator is disposed outside the gas line. An internal actuator is disposed inside the gas line and connected to the throttle plate. The external actuator is magnetically coupled to the internal actuator. Movement of the external actuator causes movement of the internal actuator relative to the gas line to adjust a position of the throttle plate.

[0008] In other features, the external actuator includes a first magnet. The internal actuator includes a second magnet. One of the external actuator and the internal actuator includes the first magnet. The other of the external actuator and the internal actuator includes a ferrous material.

[0009] In other features, the external actuator includes: a first block; a second block; and an annular plate connecting the first block and the second block around the outer surface of the gas pipeline. The first block and the second block include holes for receiving a first magnet and a second magnet, respectively. The throttle plate includes a first throttle plate and a second throttle plate. A cylinder is disposed in the gas pipeline.

[0010] In other features, the radially inner portions of the first and second throttle plates include mounting portions to receive first and second pins, respectively, extending between the side surfaces of the cylindrical body. The first and second throttle plates pivot relative to the first and second pins, respectively. The internal actuator includes: a first arm; a second arm connected to the first arm and the radially outer edge of the first throttle plate; and a third arm connected to the first arm and the radially outer edge of the second throttle plate.

[0011] In other features, the first throttle plate includes a mounting portion on a downstream surface thereof. The second arm extends through the first throttle plate and is connected to the mounting portion of the first throttle plate. The second throttle plate includes a mounting portion on a downstream surface thereof. The third arm extends through the second throttle plate and is connected to the mounting portion of the second throttle plate.

[0012] In other features, the first arm portion includes: a first arm portion extending in a radial direction; and a second arm portion including a first end connected to the first arm portion and a second end extending in an axial direction.

[0013] In other features, the cylindrical body includes a first shaft slot and a second shaft slot, respectively, on opposite sides thereof. The first shaft slot and the second shaft slot receive opposite ends of the first arm portion. The opposite ends of the first arm portion include at least one of a magnet and a ferrous material. The second end of the second arm portion includes at least one of a magnet and a ferrous material. The cylindrical body includes a first opening and a second opening disposed proximate to the first throttle plate and the second throttle plate.

[0014] A valve of a substrate processing system includes a cylindrical body, which includes a first shaft slot hole and a second shaft slot hole. A first throttle plate and a second throttle plate are mounted to the cylindrical body and pivot relative to the cylindrical body. An external actuator is radially arranged outside a gas pipeline and includes: a first block, which includes a first magnet; a second block, which includes a second magnet; and an annular plate, which connects the first block and the second block around the outer surface of the gas pipeline. An internal actuator is radially arranged inside the gas pipeline and includes a first arm, which includes a first arm portion extending in a radial direction, a first end of the first arm portion is arranged in the first shaft slot hole and includes a third magnet, and a second end of the first arm portion is arranged in the second shaft slot hole and includes a fourth magnet. A second arm portion is connected to a radial outer edge of the first arm portion and the first throttle plate. A third arm portion is connected to a radial outer edge of the first arm portion and the second throttle plate.

[0015] In other features, the actuator is configured to selectively move the external actuator relative to the gas line. The first magnet of the external actuator is magnetically coupled to the third magnet of the first arm portion. The second magnet of the external actuator is magnetically coupled to the fourth magnet of the first arm portion. Movement of the actuator causes movement of the external actuator and the internal actuator relative to the gas line to adjust the position of the first throttle plate and the second throttle plate.

[0016] In other features, the radially inner portions of the downstream sides of the first and second throttle plates include mounting portions to receive first and second pins, respectively, extending between the side surfaces of the cylindrical body. The first and second throttle plates are pivoted relative to the first and second pins, respectively.

[0017] In other features, the first arm portion further includes a second arm portion connected to the first arm portion at a first end and extending in an axial direction. The second end of the second arm portion includes a fifth magnet. The cylindrical body includes a first opening and a second opening, the first opening and the second opening being disposed proximate to the first throttle plate and the second throttle plate.

[0018] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0020] Figure 1 is a functional block diagram of an exemplary substrate processing system including a throttling valve according to the present disclosure;

[0021] Figure 2A and 2B is a simplified side cross-sectional view of an example of a throttle valve installed in a gas line according to the present disclosure;

[0022] Figure 3 is a perspective view of an example of a throttle valve installed in a gas line according to the present disclosure;

[0023] Figure 4 is a perspective view of an example of a throttle valve according to the present disclosure;

[0024] Figure 5 is a perspective view of an example of a cylinder of a throttle valve according to the present disclosure;

[0025] Figure 6 is a plan view of an example of an arm portion of a throttle valve according to the present disclosure;

[0026] Figure 7 is a plan view of an example of an annular member of a throttle valve according to the present disclosure;

[0027] Figure 8 is a plan view of an example of an arm portion of a throttle valve according to the present disclosure;

[0028] Fig. 9 is a plan view of an example of an inlet of a throttle valve according to the present disclosure;

[0029] Fig.10 is a plan view of an example of an outlet of a throttle valve according to the present disclosure; and

[0030] Fig.11 and 12 is a side cross-sectional view depicting the operation of an example of a throttle valve according to the present disclosure.

[0031] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0032] Pumps and pneumatic downstream valves are commonly used to control vacuum pressure in gas lines such as gas lines. Gas lines or forelines are designed to have high conductance for remote plasma cleaning (RPC). During some parts of the process, a reduced gas flow is required. The valve is restricted (almost completely closed) to reduce the flow rate (and the vacuum pressure in the gas line). This causes a large pressure drop at the outlet of the valve. When the valve is in this position, reactants / particles from the process chamber are accelerated at the outlet of the valve (due to the small opening of the valve and the high pressure drop). The accumulation of reactants / particles occurs at a specific location in the gas line downstream of the valve. Over time, the gas line downstream of the valve will eventually become clogged, which requires disassembly of the gas line and valve.

[0033] A throttle valve according to the present disclosure is disposed in a gas line (e.g., an exhaust line). Although the following description relates to the use of a throttle valve in an exhaust line, the throttle valve may also be used in other types of gas lines. When installed in a gas line, the throttle valve may be disposed near a processing chamber and upstream of a valve and a pump. The throttle valve includes an external actuator located outside the gas line and an internal actuator located inside the gas line. Another actuator moves the external actuator relative to the gas line. The external actuator is magnetically coupled to the internal actuator. In other words, a magnetic force is generated between the internal actuator and the external actuator, and the magnetic force causes the internal actuator to move in response to the movement of the external actuator. The movement of the external actuator causes the internal actuator to move one or more throttle plates to adjust the gas flow. The throttle valve controls the flow through the gas line in a non-contact manner without the need to punch holes through the gas line.

[0034] The throttle valve allows for more precise control of low flow rates and reduces the buildup that would otherwise occur downstream of the valve if the throttle valve were not used. In addition, the throttle valve is located closer to the process chamber and, due to its proximity to the plasma (compared to valves located further downstream), is more thoroughly cleaned during remote plasma cleaning (RPC). As a result, the process chamber can be run longer without maintenance. In addition, the throttle valve allows for more fine control of flow at lower flow rates.

[0035] Now refer to Figure 1 , the substrate processing system 100 includes a processing chamber 102 that surrounds components of the substrate processing system 100 and contains a radio frequency (RF) plasma. The processing chamber 102 includes an upper electrode 104 and a substrate support 106, which can be an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. Although a specific example of the substrate processing system 100 and the processing chamber 102 is shown as an example, the principles of the present disclosure can be applied to other types of substrate processing systems and chambers, such as substrate processing systems using remote plasma generation and delivery (e.g., using a plasma tube, a microwave tube), etc.

[0036] The gas distribution device 111 introduces and distributes the processing gas. By way of example only, the upper electrode 104 may be combined with a showerhead 109 (acting as the gas distribution device 111). The showerhead 109 may include a stem portion including one end connected to the top surface of the processing chamber 102. The base portion is generally cylindrical, includes a gas plenum and extends radially outward from the opposite end of the stem portion at a position spaced apart from the top surface of the processing chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead 109 includes holes for allowing the processing gas or purge gas to flow through. Alternatively, the upper electrode 104 may include a conductive plate and the processing gas may be introduced in another manner.

[0037] The substrate support 106 includes a bottom plate 110 that is electrically conductive and acts as a lower electrode. The bottom plate 110 supports a top plate 112 that may be formed of ceramic. In some examples, the top plate 112 may include one or more heating layers, such as a ceramic multi-zone heating plate. The one or more heating layers may include one or more heating elements, such as conductive traces, as further described below.

[0038] The bonding layer 114 is disposed between the top plate 112 and the bottom plate 110 and bonds the top plate 112 to the bottom plate 110. The bottom plate 110 may include one or more coolant channels 116 for flowing a coolant through the bottom plate 110. In some examples, the substrate support 106 may include an edge ring 118 surrounding the outer circumference of the substrate 108 to shape the plasma.

[0039] The radio frequency (RF) generation system 120 generates and outputs a voltage to one of the upper electrode 104 and the lower electrode (e.g., the bottom plate 110 of the substrate support 106). The other of the upper electrode 104 and the bottom plate 110 may be direct current (DC) grounded, alternating current (AC) grounded, or floating. By way of example only, the RF generation system 120 may include an RF voltage generator 122 that generates a voltage that is fed to the bottom plate 110 by a matching and distribution network 124. In other examples, the voltage is provided to the upper electrode 104. In other examples, the plasma may be generated inductively or remotely. Although, as shown for purposes of example, the RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as in a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, and the like.

[0040] The gas delivery system 130 includes one or more gas sources 132-1, 132-2 ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source supplies one or more gas mixtures. The gas source can also supply a purge gas. A vaporized precursor can also be used. The gas source 132 is connected to the manifold 140 through valves 134-1, 134-2 ..., and 134-N (collectively referred to as valves 134), and mass flow controllers 136-1, 136-2 ..., and 136-N (collectively referred to as mass flow controllers 136). A second set of valves (not shown) can be provided between the mass flow controllers 136 and the manifold 140. The output of the manifold 140 is fed to the process chamber 102. By way of example only, the output of the manifold 140 is fed to the showerhead 109.

[0041] The temperature controller 142 may be connected to a heating element, such as a thermal control element (TCE) 144 disposed in the top plate 112. For example, the heating element may include, but is not limited to, a giant heating element corresponding to a corresponding zone in a multi-zone heating plate and / or an array of micro-heating elements configured across multiple zones of the multi-zone heating plate. The temperature controller 142 may be used to control the heating element to control the temperature of the substrate support 106 and the substrate 108.

[0042] The temperature controller 142 may communicate with the coolant assembly 146 to control the coolant flowing through the channel 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the channel 116 to cool the substrate support 106.

[0043] The valve 150 and pump 152 are connected to the gas line 148 (e.g., an exhaust line or another gas line) and are used to control the pressure within the process chamber 102 and / or exhaust reactants from the process chamber 102. The controller 160 can be used to control the components of the substrate processing system 100. One or more robots 161 can be used to transfer substrates to the substrate support 106 and remove substrates from the substrate support 106.

[0044] The throttle valve 170 is disposed near the process chamber upstream of the valve 150. The throttle valve includes a throttle plate that rotates to different angular positions within the gas channel to change or adjust the gas flow within the gas channel. The throttle valve 170 is configured to move one or more throttle plates to adjust the gas flow through the throttle valve 170. The throttle valve 170 is installed around a gas pipeline 148 (e.g., an exhaust line or another gas line) and is moved relative to the gas pipeline 148 by an actuator 172. In some examples, the actuator 172 includes a linear actuator, a pneumatic actuator, a screw actuator, or other types of actuators. The throttle valve 170 is opened and closed via magnetic coupling through the gas pipeline 148, as will be further described below.

[0045] The throttle valve 170 is connected to the process chamber upstream of the valve 150 and the pump 152. Thus, the throttle valve 170 is more thoroughly cleaned during remote plasma cleaning (RPC) because the plasma has a shorter distance to travel.

[0046] Now refer to Figure 2A and 2B , the throttle valve 170 is shown in the closed and open positions, respectively. The throttle valve 170 includes an external actuator 180 located outside the gas line 148. The external actuator 180 is magnetically coupled to an internal actuator 182 located inside the gas line 148. The internal actuator 182 is coupled to one or more throttle plates 188 via a connecting rod 184. The actuator 172 is coupled to the external actuator 180 via a connecting rod 186. The actuator 172 selectively moves the external actuator 180 relative to the gas line 148 to adjust the position on the throttle plate 188.

[0047] In some examples, the external actuator 180 and the internal actuator 182 include inserts 190 and 191, respectively. In some examples, the inserts 190 and 191 of the external actuator 180 and the internal actuator 182, respectively, include magnets having opposite polarities. In other examples, one of the external actuator 180 and the internal actuator 182 includes a magnet, and the other of the external actuator 180 and the internal actuator 182 includes a ferrous material that is magnetically attracted to the magnet.

[0048] Now refer to Figure 3 , the throttle valve 170 is shown installed in a gas line 204 having a cylindrical shape and including a flange 206. The throttle valve 170 includes an external actuator 210, which is reciprocated relative to the outer surface of the gas line 204 by an actuator 172. The external actuator 210 includes a block 214, which provides a mounting location and includes a first hole for receiving a magnet 216 and a second hole for receiving a set screw 217. The set screw 217 can be tightened against the outer surface of the gas line to prevent movement of the throttle valve 170. The external actuator 210 also includes a block 224, which is disposed on the opposite side of the gas line 204 and provides another mounting location. The plate 220 extends around the gas line 204 and is spaced apart from the gas line 204. The plate 220 is connected to the blocks 214 and 224 by fasteners 223.

[0049] In some examples, blocks 214 and 224 include mounting holes for receiving magnets, ferrous materials, and / or fasteners (to connect plate 220). In some examples, blocks 214 and 224 include rectangular cubes, but blocks of other shapes may also be used. In some examples, plate 220 includes an arcuate, semicircular, or annular support plate, but other shapes may also be used. The opposite ends of the paired plates 220 are respectively connected to the ends of blocks 214, 224 around the periphery of the gas or gas pipeline. This arrangement allows the external actuator 210 to be connected to the gas or gas pipeline to be removed from the gas or gas pipeline without disassembling the gas or gas pipeline.

[0050] The throttle valve 170 also includes a cylindrical member or body 230 disposed inside the gas line 204. The first and second throttle plates 234 have a semicircular shape and are mounted to (and pivot relative to) opposite side surfaces of the body 230. In some examples, a pin 238 extends between the side surfaces of the body 230. The pin 238 is attached to the radial inner surface of the first and second throttle plates 234 by a mounting portion 240. In some examples, each mounting portion 240 includes a block having a hole for receiving the pin 238.

[0051] The first ends of the first and second arms 250 (collectively or individually referred to as arms 250) are attached to the radial outer edges 251 of the first and second throttle plates 234. In some examples, the first ends of the first and second arms 250 extend through and are attached to the surfaces 253 of the first and second throttle plates 234. In some examples, the surface 253 is a downstream surface facing the outlet of the throttle valve 170 (compared to the opposite or upstream surfaces of the first and second throttle plates 234 facing the inlet of the throttle valve 170). Downstream is in the direction of airflow, and upstream is the direction opposite to the direction of airflow. In some examples, the mounting portion 252 extends from the surface 253 at the radial outer edges 251 of the first and second throttle plates 234 in a direction toward the outlet of the throttle valve. In some examples, each mounting portion 252 includes a block having a hole for receiving the pin 238. In some examples, the through hole 260 extends through the first and second throttle plates 234 to provide a base flow rate when the first and second throttle plates 234 are closed.

[0052] Now refer to Figure 4 and 5, showing the throttle valve 170. The cylindrical body 230 of the throttle valve 170 includes arcuate openings 310 and 312 on opposite sides thereof and slots 318 and 320 on opposite sides thereof. In some examples, the arcuate openings 310 and 312 are aligned with the radial outer edges of the throttle plates, and the slots 318 and 320 are rotated 90° relative thereto. The arcuate openings 310 and 312 reduce accumulation that would occur along the radial outer edges of the first and second throttle plates 234 if the openings 310 and 312 were not used.

[0053] The internal actuator 328 includes an arm 250 and an arm 330, which includes a first arm portion 334 and a second arm portion 336. The second arm portion 336 extends axially and has an "L" shaped configuration. The first arm portion 334 is connected to the second arm portion 336 and extends radially. The ends of the first arm portion 334 are received and guided by the slots 318 and 320 during movement. Magnets 338 are disposed in holes in the opposite ends of the first portion 334. Magnets (described below) are also located at the ends of the second arm portion 336 that are distal to the first arm portion 334.

[0054] exist Figure 5 2, holes 410 may be provided at different circumferential positions of cylinder 230 to allow the use of set screws (not shown) to fix the throttle valve 170 in a rotational position in gas line 204. A flange 440 extends radially outward from one end of cylinder 230. Flange 440 abuts against flange 206 to prevent axial movement of throttle valve 170 in a downstream direction after installation.

[0055] Now refer to Figure 6 , showing the arm 330 of the throttle valve 170. The end 528 of the second arm portion 336 extends radially outward and includes a magnet 530 embedded therein. The opposite ends 520 and 524 of the first arm portion 334 include magnets 338 and 526 embedded therein, respectively. The "U" shaped or concave member 509 includes a first leg 510 and a second leg 512 extending from the first arm portion 334 in an opposite direction from the second arm portion 336. The first leg 510 and the second leg 512 are spaced apart from each other. The arm 250 ( Figure 3 , 4 , and 8) are installed between the first leg 510 and the second leg 512 of the “U”-shaped member 509.

[0056] Now refer to Figure 7 , showing the plate 220 of the throttle valve 170. The plate 220 extends between the opposing axially facing surfaces of the blocks 214 and 224. The plate 220 includes first and second arcuate members 611, which include holes 614 and 616 at their ends 610 and 612, respectively. The holes 614 and 616 receive the fasteners 223.

[0057] Now refer to Figure 8 , shows an example of the first and second arms 250 of the throttle valve 170. The arm 250 includes a first arm portion 710 and a second arm portion 712. The first arm portion 710 forms an acute angle with respect to the second arm portion 712. Holes 714 and 716 are located at opposite ends thereof and receive mounting pins (not shown).

[0058] Now refer to Fig. 9 and 10 , showing the inlet and outlet of the throttle valve 170, wherein the first and second throttle plates 234 are in the closed position, respectively. Fig. 9 1, the first arm portion 334 extends radially through the interior volume of the throttle valve 170. When closed, the first and second throttle plates 234 reduce the flow of gas other than that flowing through the through holes 260 (if used). In addition, some gas still flows around the radial inner and outer edges of the first and second throttle plates 234.

[0059] As can be appreciated, when the throttle valve 170 is fully opened by moving the arm 330 in the upstream direction, the radially outer ends of the first and second throttle plates 234 pivot in the upstream direction, and the first and second throttle plates 234 are shielded from the airflow by the first arm 334, which reduces the accumulation of reactants and / or particles on the first and second throttle plates 234.

[0060] Now refer to Fig.11 and 12 , the throttle valve 170 is shown in the closed and open positions, respectively. The actuator 172 moves the external actuator 210 back and forth in the axial direction. To close the throttle valve 170, the actuator 172 moves in the downstream direction. The magnets 216 in the blocks 214 and 224 move in the downstream direction. In some examples, the blocks 214 and 224 may include bearings 910 to reduce friction. The magnets 338 and 530 in the first arm portion 334 of the arm 330 are magnetically coupled to the magnets 216 in the blocks 214 and 224 of the external actuator 210. In some examples, the magnet 526 in the end of the second arm portion 336 is magnetically coupled to the ball bearing 920 to provide visual confirmation of the movement of the arm 330 and the first and second throttle plates 234.

[0061] To open the throttle valve 170, the actuator 172 moves in the upstream direction. The magnets 216 disposed in the blocks 214 and 224 also move in the upstream direction. The magnets 338 and 530 in the first arm portion 334 of the arm 330 are magnetically coupled to the magnets 216 in the blocks 214 and 224 of the external actuator 210. The arm 330 moves in the upstream direction. The arm 330 is connected to the radial outer surfaces of the first and second throttle plates 234 through the arm 250. In response to the movement of the arm 330 and the arm 250, the first and second throttle plates 234 pivot about the pin 238, which increases airflow.

[0062] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0063] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship may be a direct relationship, in which there are no other intervening elements between the first and second elements, or an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0064] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate supports, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools connected or docked with specific systems and other transfer tools and / or load locks.

[0065] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing specific processing on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0066] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, to change the parameters of the current processing, set processing steps to follow the current processing, or start a new processing. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0067] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0068] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A valve for a substrate processing system, comprising: a throttle plate configured to adjust gas flow through the gas line; an external actuator disposed outside the gas line; and an internal actuator disposed inside the gas line and connected to the throttle plate; wherein the external actuator is magnetically coupled to the internal actuator, and The movement of the external actuator causes the internal actuator to move relative to the gas line to adjust the position of the throttle plate.

2. The valve according to claim 1, wherein: The external actuator comprises a first magnet; and The internal actuator includes a second magnet.

3. The valve according to claim 1, wherein: One of the external actuator and the internal actuator includes a first magnet; and The other of the external actuator and the internal actuator includes a ferrous material.

4. The valve of claim 1 , wherein the external actuator comprises: The first block; The second block; as well as A plate connects the first block and the second block on opposite sides of the outer surface of the gas line.

5. The valve of claim 4, wherein the first block and the second block include holes for receiving the first magnet and the second magnet, respectively.

6. The valve of claim 1, wherein the throttle plate comprises a first throttle plate and a second throttle plate.

7. The valve of claim 6, further comprising a cylinder disposed in the gas line.

8. The valve according to claim 7, wherein: The radially inner portions of the first throttle plate and the second throttle plate include mounting portions to receive first and second pins extending between side surfaces of the cylindrical body, respectively; and The first throttle plate and the second throttle plate are pivoted relative to the first pin and the second pin respectively.

9. The valve of claim 7, wherein the internal actuator comprises: first arm; a second arm portion connected to the first arm portion and a radially outer edge of the first throttle plate; as well as A third arm portion is connected to the first arm portion and a radially outer edge of the second throttle plate.

10. The valve according to claim 9, wherein: The first throttle plate includes a mounting portion located on a downstream surface thereof; the second arm portion extending through the first throttle plate and connected to the mounting portion of the first throttle plate; The second throttle plate includes a mounting portion on a downstream surface thereof; and The third arm extends through the second throttle plate and is connected to the mounting portion of the second throttle plate.

11. The valve of claim 9, wherein the first arm portion comprises: a first arm portion extending in a radial direction; as well as The second arm portion includes a first end portion connected to the first arm portion and a second end portion extending in an axial direction.

12. The valve according to claim 11, wherein: The cylindrical body includes a first shaft slot hole and a second shaft slot hole respectively located on opposite sides thereof, and the first shaft slot hole and the second shaft slot hole receive opposite ends of the first arm portion.

13. The valve of claim 11, wherein opposing ends of the first arm portion include at least one of a magnet and a ferrous material.

14. The valve of claim 11, wherein the second end of the second arm portion comprises at least one of a magnet and a ferrous material.

15. The valve of claim 7, wherein the cylinder includes a first opening and a second opening disposed proximate to the first throttle plate and the second throttle plate.

16. A valve for a substrate processing system, comprising: A cylindrical body including a first shaft slot and a second shaft slot; a first throttle plate and a second throttle plate, the first throttle plate and the second throttle plate being mounted to the cylindrical body and pivoting relative to the cylindrical body; an external actuator, which is disposed radially outside the gas line and comprises: a first block including a first magnet; a second block including a second magnet; and a plate connecting the first block and the second block on opposite sides of an outer surface of the gas line; and an internal actuator disposed radially inside the gas line and comprising: A first arm portion including a first arm portion extending in a radial direction, a first end portion of the first arm portion being disposed in the first shaft slot and including a third magnet, and a second end portion of the first arm portion being disposed in the second shaft slot and including a fourth magnet; a second arm portion connected to the first arm portion and a radially outer edge of the first throttle plate; and A third arm portion is connected to the first arm portion and a radially outer edge of the second throttle plate.

17. The valve according to claim 16, further comprising: an actuator configured to selectively move the external actuator relative to the gas line, wherein: the first magnet of the external actuator is magnetically coupled to the third magnet of the first arm portion; the second magnet of the external actuator is magnetically coupled to the fourth magnet of the first arm portion; and Movement of the actuator causes movement of the outer actuator and the inner actuator relative to the gas line to adjust positions of the first throttle plate and the second throttle plate.

18. The valve of claim 16, wherein: The radially inner portions of the downstream sides of the first throttle plate and the second throttle plate include mounting portions to receive first and second pins extending between the side surfaces of the cylindrical body, respectively; and The first throttle plate and the second throttle plate are pivoted relative to the first pin and the second pin respectively.

19. The valve of claim 16, wherein: The first arm portion further includes a second arm portion connected to the first arm portion at a first end and extending in an axial direction; and The second end of the second arm portion includes a fifth magnet.

20. The valve of claim 16, wherein the cylindrical body includes a first opening and a second opening, the first opening and the second opening being disposed proximate to the first throttle plate and the second throttle plate.

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