Phase change switchgear

Abstract

The invention provides a phase change switch device. Comprising a first phase change switch comprising a phase change material, a heater device arranged to heat the phase change material, a first switch terminal electrically coupled to the phase change material, a second switch terminal electrically coupled to the phase change material, a first heater power supply terminal electrically coupled to the heater and a second heater power supply terminal electrically coupled to the heater, a second phase change switch comprising a phase change material, a heater device arranged to heat the phase change material, a first switch terminal electrically coupled to the phase change material, a second switch terminal electrically coupled to the phase change material, a first heater power supply terminal electrically coupled to the heater and a second heater power supply terminal electrically coupled to the heater, wherein the first switch terminal of the second phase change switch is electrically coupled to the first heater power supply terminal of the second phase change switch.

Description

Technical Field

[0001] The present application relates to phase change switchgear and to methods of operating phase change switchgear. Background Art

[0002] Technical requirements for radio frequency (RF) applications using high frequencies, such as radar sensing and mobile communications according to the 5G standard, are increasing. In particular, switches that have improved characteristics compared to the most advanced CMOS switches will be required to meet future needs. Phase change switches are considered to be potential candidates for switching RF signals. Such phase change switches use phase change materials (PCMs), which generally exhibit higher conductivity in the crystalline phase than in the amorphous phase. By changing the phase of the phase change material, a switching device including such a material can be turned on or off.

[0003] For example, in order to change the phase from amorphous to crystalline, a heater is typically used to heat the phase change material to induce crystallization. This conduction by inducing crystallization is also referred to as a set operation. In a set operation, for example, the heater is actuated in such a way that the temperature of the phase change material is above its crystallization temperature (typically about 250° C.) but below its melting temperature (typically in the range of 600° C. to 900° C.). The length of the heating pulse induced by the heater is selected so that any amorphous regions present in the PCM can regrow into a crystalline phase.

[0004] When the switching device is turned off (also referred to as a reset operation), the heater is activated in such a way that the temperature of the PCM is raised to above the melting temperature (e.g., above about 600° C. to 900° C.), followed by relatively rapid cooling to freeze the phase change material into an amorphous state. The heater (also referred to herein as a heater device) is typically a resistive heater made of a thin film conductive layer (e.g., tungsten), and is used to generate a local temperature gradient with a defined profile to change the phase change material between a crystalline state and an amorphous state.

[0005] Suitable phase change materials for such a phase change switch include germanium telluride (GeTe) or germanium antimony telluride (GeSbTe, commonly referred to as GST), and the heater may be made of materials like polysilicon or tungsten.

[0006] Phase change switches are used to switch radio frequency signals, for example, in the GHz range, when used, for example, in antenna tuning applications. The actual RF voltages required for antenna tuning applications can be as high as 100V. It is difficult to design a PCM device that can withstand such voltages with a grounded heater due to the high capacitive coupling between the heater and the PCM, which causes an uneven voltage distribution across the PC material and thus reduces the voltage handling. Additionally, stacking several switches will not scale up the voltage handling as desired due to the leakage path to ground via the first heater in the stack. Summary of the invention

[0007] There is provided a phase change switching device as defined in claim 1 or 4 and a method as defined in claim 16. The dependent claims define further embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figures 1A to 1D The configuration of the phase change switch used in the embodiment and the naming convention for the terminals used herein are illustrated.

[0009] Figure 2 , FIG. 3A to FIG. 3C , FIG. 4A to FIG. 4C as well as FIG. 5A to FIG. 5E A phase change switching device according to various embodiments is illustrated.

[0010] Figure 6 is a flow chart illustrating a method according to an embodiment. DETAILED DESCRIPTION

[0011] Various embodiments will be described in detail below with reference to the accompanying drawings. The embodiments described below are only examples and are not to be construed as limiting. For example, when a specific arrangement or component is provided in an embodiment, other configurations may be used in other embodiments.

[0012] In addition to the features explicitly shown and described (or, for example, components, elements, behaviors, events, or the like), additional features may be provided in other embodiments, such as features used in conventional switching devices using phase change materials. For example, the embodiments described herein relate to specific couplings and arrangements of multiple phase change switches, as well as other components and features (such as the spatial arrangement of heaters and phase change materials, radio frequency (RF) circuit devices using switching devices, and the like that can be implemented in a conventional manner). Such RF circuit devices can be integrated on the same substrate as the described switching devices, but can also be provided separately (for example, provided on one or more separate chip dies, which in some implementation methods can then be combined with the switching devices in a common package). In addition, the manufacturing implementation method can be performed in any conventional manner (such as providing phase change material on a substrate (such as a silicon substrate) to implement a phase change switch, providing phase change material in a groove in a silicon substrate to manufacture a phase change switch, etc.).

[0013] In this article switches based on phase change materials (PCM) will be referred to as phase change switches or short PCS or PCM switches. As explained in the introduction, such phase change switches can be set to a change in the crystalline phase or the amorphous phase, so that the resistance value of the phase change material and therefore the resistance value of the switch changes by several orders of magnitude. In this way, on-resistance values ​​of the switch in the range of, for example, 1Ω to 100Ω can be achieved, while off-resistance values ​​can be several orders of magnitude higher (for example at least in the kiloohm range).

[0014] Implementation details described with respect to one of the embodiments also apply to the other embodiments.

[0015] The phase change switch device discussed herein includes a plurality of independent phase change switches.

[0016] Before discussing the embodiments in detail, Figures 1A to 1D Examples of implementation methods of phase change switches that can be used in the embodiments and the terms used below are explained.

[0017] Figure 1A and Figure 1B An example layout and cross-section for a PCS that can be used in an embodiment is shown in FIG. Figure 1A A cross-sectional view is shown and Figure 1B A top view is shown. Figure 1C shows the simplified representation used in this article. This means that in the following figures Figure 1C The PCS is represented by a representation method of . The PCS has two terminals Ta and Tb (also referred to as switch terminals) for electrically contacting a phase change material (PCM) 10. As explained above, depending on the state of the PCM 10 (crystalline or amorphous), the ohmic resistance provided by the PCM 10 between the switch terminal Ta and the switch terminal Tb is low (on state) or high (off state), thus providing a switch functionality.

[0018] Ha, Hb are the terminals of the heater 11. The heater 11 is used to selectively heat the PCM 10 to change it between the amorphous state and the crystalline state. The typical width W of the PCM 10 used for antenna tuning applications in A can be up to hundreds of microns. The length L can vary between about 0.5 μm and a few microns. The PCM 10 and the heater 11 are separated by a dielectric layer (e.g., SiN, AolN; not shown). Figures 1A to 1DThe dielectric layer is separated from the heater by a dielectric layer (shown in FIG. 1 ), which typically has a thickness of between 50 nm and 100 nm. On the one hand, the layer should be thin to allow effective thermal coupling between the heater and the PCM; on the other hand, it should be thick to minimize the capacitive coupling between the two. Therefore, the thickness of the layer is generally a compromise between thermal coupling and capacitive coupling. In some applications, one of the switch terminals Ta and the switch terminals Tb is grounded for a parallel switch configuration, and the parallel switch is used as a special example hereinafter. However, the illustrated embodiment can also be used in other configurations and applications. Both heater terminals are conventionally well grounded by the actuation circuit during RF operation, which is acceptable for low voltage switches, but causes problems in high voltage designs. Therefore, in some embodiments discussed herein, the heater can be decoupled from the ground by another PCS.

[0019] The actual RF voltage required for antenna tuning applications can be as high as 100 V. It is difficult to design a PCM device that can withstand such voltages with a grounded heater due to the high capacitive coupling between the heater and the PCM, which causes uneven voltage distribution across the PC material and thus reduces voltage handling. Additionally, stacking several switches will not scale up the voltage handling as required due to the leakage path to ground via the first heater in the stack. Figure 1D Such a stack is shown in FIG. 1 , where N PCSs are coupled in series to increase voltage tolerance. Figure 1D In the case of N PCSs, numbers are attached to the terminals Ta, Tb, Ha and Hb of each switch (i.e., Ta_1, Tb_1, Ha_1, Hb_1 for the first switch, Ta_2, Tb_2, Ha_2, Hb_2 for the second switch, etc.).

[0020] Figure 2A minimum unit, such as a building block, of a part or all of a phase change switch device (e.g., a high voltage PCM RF switch device according to an embodiment including 2 PCM switches) is shown. Switch 1 has switch terminals Tb_1, Ta_1 and heater terminals Ha_1, Hb_1, and switch 1 participates in establishing a switchable RF path via terminal Tb_1, terminal Ta_1 and PCM of switch 1. In other words, switch 1 is used to switch a signal similar to an RF signal (e.g., for antenna tuning purposes). Switch terminal Tb_2 of switch 2 is connected to heater terminal Ha_1 of switch 1. Switch 2 is used to drive a heater of the first switch. For example, an actuating device 20 for changing the switching state of switch 1 between on and off powers a heater of heating switch 1 via switch 2 (e.g., by providing power to terminal Ta_2 when switch 2 is on), and provides power to the heater of switch 2 (e.g., at terminal Ha_2) to turn on switch 2. The actuation device 20 may include a high power bias structure that provides a voltage or current pulse of the required form and duration through a heater to switch the PCM of each switch from a crystalline to an amorphous phase, and vice versa, which defines a switching event for each switch, such as an RF path between switch terminal Tb1 and switch terminal Ta1 when switch 1 is switched, or a path for powering the heater of switch 1 when switch 2 is switched.

[0021] The second switch in some embodiments may be an auxiliary switch, i.e. it does not participate in establishing a switchable path for a switching signal (e.g. an RF signal). In other embodiments, switch 2 may be a contributor to the RF path (i.e. directly participate in switching the signal). In the latter case, switch 2 has a dual function, acting both as an auxiliary switch for heating and as a signal (e.g. RF) switch. In this case, for example, switch terminal Tb_2 may be additionally coupled to switch terminal Ta_1.

[0022] In an embodiment, switch 2 establishes a low ohmic connection to the heater of switch 1 during an actuation or heating phase (by turning switch 2 on), and a high ohmic connection is established by switch 2 during an operation phase (e.g., RF operation) in which an RF signal is applied to switch 1 (by turning switch 2 off). The high ohmic connection when switch 2 is off can be a predominantly capacitive coupling based on the capacitance between switch terminal Ta_2 and switch terminal Tb_2 when the PCM of switch 2 is in a high ohmic (amorphous) state. The high ohmic connection in an embodiment can maximize the voltage handling capability of a phase change switch device by reducing the coupling between the PCM of switch 1 and ground through the heater and improving the voltage distribution across the device (e.g., the PCM of switch 1).

[0023] In the first method, if Figure 2The cells shown in can be used to design a HV (high voltage)-RF-phase change switch device with an auxiliary driver switch.

[0024] In a second approach, such a unit can be used to design a pure HV-RF-PCS device without auxiliary switches (which is disconnected from the floor heater), and to design a phase change switch device with a reduced number of auxiliary switches. In this approach, the dual functionality of the phase change switch is as explained above. Each configuration can have particular advantages. Embodiments for both configurations will be discussed below.

[0025] According to the first method mentioned above, using Figure 2 A first set of embodiments of the illustrated concept is to provide a phase change switch device for RFPCS using an auxiliary PCM switch configuration, such as FIG. 3A to FIG. 3C In Figures 3 to 5 (including corresponding sub-figures A to E), the phase change switches are arranged in stages and are numbered from bottom to top in the figures. Figure 4A ) are labeled with two numbers x and y (e.g. Ta_xy), where y gives the stage and x is the number of PCSs within the stage. Thus, for example Tb_12 specifies terminal Tb of switch 1 in stage 2, etc. This number also refers to the PCS itself (also referred to as switch for short), i.e. switch #xy (e.g. switch #12).

[0026] Figure 3A An embodiment is shown in which a switchable RF path includes at least one PCS, in which two PCS#22 and #21 coupled in series are shown. In operation, for example in a parallel configuration, switch terminal Tb_22 can be coupled to an RF source and switch terminal Ta_21 can be coupled to ground. Other applications are also possible, in which PCS#22 and #21 selectively provide a high-ohmic path (off state) or a low-ohmic path (on state) between switch terminals Tb22 and Ta21. The heater of PCS#22 is connected to an actuating device (not shown) via auxiliary PCS#11, #31 (also labeled 30A, 30B, respectively). Figure 3A As shown in Figure 2 actuating device 20 and its description).

[0027] The heater terminals and thus the heaters of the two auxiliary switches #11 and #31, as well as the switch terminals Ta11, Ta31 terminals are coupled to the actuation device.

[0028] The heater of PCS #21 may be coupled directly to the actuation device or directly to an additional auxiliary PCS structure (not shown), for example via switches 30A, 30B in the same manner as defined for PCS #22. The first case (direct coupling) may be more suitable for a parallel configuration (where, for example, switch terminal Ta_21 is coupled to ground), while the second case (coupling via an additional auxiliary PCS structure) may be more suitable for a series configuration of the PCS.

[0029] Figure 3B A phase change switch device with a more complex PCS arrangement is shown, which includes more stacked devices, which can increase the voltage handling capability. In this case, Figure 3A The entire phase change switch device shown in FIG. 3 can be used as an auxiliary switch arrangement 31A, 31B (i.e. Figure 3B Each of the frames 31A, 30B includes Figure 3A A phase change switch device with terminals, and an RF path or other signal path can be between switch terminals Tb3 and Ta1. Via switch arrangements 31A, 31B, the heater of switch #13 is supplied via terminals Ta21, terminal Ta61, the heater of switch #12 is supplied via terminals Ta11, terminal Ta31, and the heater of switch #32 is supplied via terminals Ta51, terminal Ta71. The heaters of the remaining switches shown can be directly coupled to the corresponding actuation devices. The same method can be applied to achieve higher levels of stacking (e.g., auxiliary switch arrangements have more stages and / or are also used for other PCS in the RF path).

[0030] Figure 3C An embodiment is shown in which the auxiliary switch arrangements 32A, 32B are combined together for a parallel configuration as shown, wherein Figure 3C In the embodiment, PCS#12, #22 and #32 of stage 2 are coupled in series (including the auxiliary switch and PCS#22 in the RF path from Ta1 to Tb3). Therefore, the heaters of switches #12, #22 and #32 are commonly supplied via terminals Ta11 and Ta51, and the heater of switch #13 is supplied via terminals Ta21 and Ta41. The heaters of the remaining switches can be directly coupled to the corresponding actuating devices.

[0031] FIG. 3A to FIG. 3C The auxiliary switch in is only used in the actuation path for actuating one or more heaters in the signal path (eg, RF path) and therefore does not reduce the on-state resistance of the PCS structure.

[0032] FIG. 4A to FIG. 4CAn embodiment according to the second approach mentioned above is shown in FIG. Here, some PCSs have dual functions as mentioned above. In some embodiments, this can be seen as completely merging the auxiliary PCS with the (multiple) main switch paths (e.g. (multiple) RF paths). This can be achieved by using Figure 2 Thus, the PCS of the auxiliary switch arrangement (e.g., 30A, 30B, 31A, 31B, 32A, 32B in FIG. 3 ) is merged with the PCS of the main path (e.g., the PCS serves as both an auxiliary switch for heater actuation and an RF switch). This Figure 4A As shown in FIG. , the left side shows Figure 3A A similar phase change switch device 43 but with two parallel signal paths. Switches #11 and #12 form a first signal path, and switches #21, #22 form a second signal path. Terminals Tb_12 and Tb_22 are coupled to form a single terminal 40, which can be selectively coupled to Ta_11 and / or Ta_21 (e.g., a single pole (40) double throw (Ta_11, Ta_21) configuration). This is only an example configuration, and other configurations may also be implemented.

[0033] As indicated by arrow 41, Figure 4A The phase change switching device 43 shown on the left side is incorporated into Figure 4A The phase change switch device 44 is shown on the right side of the figure. Although a separate auxiliary switch 42 is provided on the left side, both PCS#11 and #21 on the right side are used as auxiliary switches and main switches. In order to switch the states of PCS#12 and #22, power is supplied to the heater terminal Ha12 and the heater terminal Hb22 via switches #11 and #21, respectively. Therefore, in this case, switches #11 and #21 have an auxiliary switch 42 or a main switch with the phase change switch device 43. Figure 3A The switches #11 and #21 of the phase change switch device 44 are also part of the signal path from the terminal 40 to the terminals Ta_11, Ta_21, respectively, and therefore also serve as main switches (eg, for switching RF signals).

[0034] Figure 4B and Figure 4C Shown Figure 4A The method of building a higher stack of devices. Figure 4B In the embodiment, the series connection of the heaters of stage 3 is coupled at each end to two respective nodes 45, the nodes 45 being between the PCSs of the second and third stages, and Figure 4C Each end of the series connection is coupled to only one such node 47. Therefore, for switching, the voltage can be supplied in parallel via the terminals Ta_11, Ta_21 at one end and the terminals Ta_31, Ta_41 at the other end. Figure 4B The heater in stage 3, while Figure 4C The heater is supplied only through terminal Ta_11 and terminal Ta_41.

[0035] exist Figure 4B and Figure 4C In the example of , in stage 3, all four heaters are coupled in series, while in stage 2, two groups of two heaters are each coupled in series, and the end terminals of the respective series connections are coupled to the node 46 between the PCSs of stage 1 and stage 2 as shown, thus supplying the heaters via the switches of stage 1. Other configurations are also possible. Figure 4B and Figure 4C In the embodiment, the RF path or other switchable path is between 40 and Ta_11, Ta_21, Ta_31 and Ta_41 (eg, a single-pole 4-throw configuration). Figure 4B and Figure 4C The four paths from 40 and Figure 4A The number of two paths in is only an example, and other numbers of paths may be provided. This also applies to the above FIG. 3A to FIG. 3C and described below FIG. 5A to FIG. 5E .

[0036] Since the auxiliary circuit is usually coupled to ground (to the actuation circuit) from one side, FIG. 4A to FIG. 4C The method is applicable to the PCS structure configured in parallel.

[0037] Now I will explain in more detail FIG. 4A to FIG. 4C The switching of phase change switching devices is done using Figure 4A A phase change switching device 44 is used as an example. A similar method can be used for Figure 4B and Figure 4C A phase-change switching device is provided, which is a necessary extension of the concept of the phase-change switching device 44.

[0038] An off-->on switching event changes the state of a signal path from off to on:

[0039] The actuation device directly coupled to PCS#11, #21 turns on PCS#11, #21 of stage 1. PCS#11, #21 in the on state establishes a DC path between the two lower terminals Ta_11, Ta_21 and the heaters of the upper two cells (Ha_12 and Hb_22).

[0040] An actuation pulse is then applied between Ta_11 and Ta_21 by the actuation device, bringing PCS #12, #22 of stage 2 into a conducting state.

[0041] Therefore, for N stages, off-on switching is performed successively from stage 1 to stage N.

[0042] On->off switching event:

[0043] First possibility: direct conduction of current through the PCM material (from Ta_11, Ta_21 to Tb_12, Tb_22), i.e. applying a corresponding actuation pulse between terminals Ta11, Ta12 on the one hand and Ta_21, Tb_22 on the other hand, or only between Ta_11, Ta_21, thus flowing through all heaters of the phase change switching device 44. In this case, the current left to the PCS directly heats the phase change material for switching.

[0044] Second possibility: opposite OFF->ON sequence, i.e. the sequence explained above for OFF->ON switching events is reversed, so that the first PCS #12, #22 of stage 2 is turned off by a corresponding actuation pulse applied between Ta_11 and Ta_21, and then the PCS of stage 1 is turned off by applying a corresponding actuation pulse directly to its heater. The maximized actuation power efficiency of the structure occurs in the advantage of the method of using a switch with dual functionality (as auxiliary switch and main switch), because less phase change material is required and less switching is required. Because each switching of a PCS requires power, less power is required in the structure used above.

[0045] exist FIG. 4A to FIG. 4C In the method, no pure auxiliary switch is used, which reduces the off capacitance of the switching device, which can be helpful for some applications.

[0046] In other methods, such as FIG. 3A to FIG. 3C As in the use of some pure auxiliary switches, and as in the 4A to Figure 4C Combine other switches as in . FIG. 5A to FIG. 5E The corresponding embodiment is shown. FIG. 5A to FIG. 5E The phase change switching device "hybrids" the two methods explained above. FIG. 4A to FIG. 4C This can facilitate the switching sequence (e.g. making it more independent of the switching device connected to it (e.g. connected to the Figure 5A The load of Tb_12, Tb_22) in the example may be reduced, but improvements such as off capacitance and power efficiency may still be possible.

[0047] exist FIG. 5A to FIG. 5C In the example, the RF path is connected between node 50 and terminal Ta_11 ( Figure 5A ), terminals Ta_11, Ta_21, Ta_31 and Ta_41 ( Figure 5B and Figure 5C , i.e. single pole 3 throw configuration) or terminals Ta_11, Ta_21 ( Figure 5E, i.e., single-pole double-throw configuration). Other configurations are also possible. Auxiliary switches not provided in the signal path (e.g., RF path) are generally labeled 51, especially for Figure 5A It is 51A, yes Figure 5B It is 51B, yes Figure 5C It's 51C, yes. Figure 5D It is 51D and Figure 5E It is 51E. Figure 5A In the embodiment, PCS#11 is used as both an auxiliary switch and a main switch, as in the embodiment discussed with reference to FIG4. PCS#21 in block 51A is a pure auxiliary switch, as in the embodiment discussed with reference to FIG3.

[0048] The switch from off to on can be performed as follows: Figure 5A For example:

[0049] The switches of stage 1 are first brought into a conducting state by means of an actuation device directly coupled to the respective heater.

[0050] The PCS of stage 2 is then turned on via the PCS of stage 1 by an actuation pulse applied between terminals Ta_11 and Ta_21. To this end, the actuation pulse may be applied to terminal Ta_21 while grounding Ta_11, e.g. in the case of a parallel configuration (where Ta_11 is grounded anyway).

[0051] As mentioned above Figure 4A As explained, switching from on to off may be performed in the reverse order of switching from off to on, or by sending an actuation pulse directly through the switch.

[0052] The same method can be used for FIG. 5B to FIG. 5E , i.e. starting in stage 1 and in stage N (e.g. Figure 5A In the case of level 2, FIG. 5B to FIG. 5E In the case of level 3), the switching from off to on is completed.

[0053] FIG. 5B to FIG. 5E An example is Figure 5A Extensions and modifications of the embodiments. Figure 5B and Figure 5C Shown with Figure 4B and Figure 4C The phase change switching device is similar to a single throw 4-pole configuration, in which an additional auxiliary switch 51B is provided as shown. Figure 5B and Figure 5C The difference between Figure 4B and Figure 4C The same explanation is given, that is, Figure 5B In (such as Figure 4BThe series connection of the heaters of stage 3 is connected at each end to two nodes between stages 2 and 3 (with Figure 4B 45), and in Figure 5C is connected to a node at each end (with Figure 5C Additional auxiliary switches 51B, 51C are coupled to node 52 between the heaters of switch #23 and switch #33, so that the actuation pulse for switching switches #13 and #23 is applied to terminal Ta_1 and terminal Ta_11 (and Figure 5B and the actuation pulse for switching switches #33 and #34 can be applied between terminal Ta_1 and terminal Ta_41 (and Figure 5B between Ta_31).

[0054] Figure 5D and Figure 5E A single-pole, double-throw configuration is shown. Figure 5D and Figure 5E In both, the heaters of stage 3 are coupled in series and Figure 5D In the case of a series connection, one end is coupled to two nodes between stage 2 and stage 3, and Figure 5E is coupled to a node between stage 2 and stage 3, and as explained above Figure 4B and Figure 4C Between or Figure 5B and Figure 5C The second ends of the series connection between the heaters of stage 3 are coupled to auxiliary switch 51D or auxiliary switch 51E, respectively. Auxiliary switches 51D, 51E themselves are as shown in Figure 4A The phase change switch device 44 of the main path (e.g., RF path) is arranged and operated as shown in FIG. Figure 4B or Figure 4C The left parts of level 1 and level 2 are arranged like this.

[0055] The number of stages shown in the figures is not to be construed as limiting, and other numbers of stages may be provided.

[0056] Figure 6 A method of manufacturing a phase change switch device according to an embodiment is illustrated. At 60, the method includes providing a plurality of phase change switches. At 61, the method includes coupling the phase change switches to form a phase change switch device as described with reference to FIGS. 1 to 5. The providing at 60 and the coupling at 61 may be performed together using necessary conventional semiconductor technology, using deposition technology for depositing phase change materials, constructing metal layers for coupling, etc. during the manufacturing process.

[0057] Although specific embodiments have been illustrated and described herein, it will be appreciated by those skilled in the art that a variety of alternative and / or equivalent embodiments may replace the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adjustments or modifications of the specific embodiments discussed herein. Therefore, this invention is intended to be limited only by the claims and their equivalents.

Claims

1. A phase change switch device, comprising: a first phase change switch, comprising a phase change material (10), a heater device (11) arranged to heat the phase change material (10), a first switch terminal (Ta) electrically coupled to the phase change material (10), a second switch terminal (Tb) electrically coupled to the phase change material (10), a first heater power terminal (Ha) electrically coupled to the heater, and a second heater power terminal (Hb) electrically coupled to the heater, a second phase change switch, comprising a phase change material (10), a heater device (11) arranged to heat the phase change material (10), a first switch terminal (Ta) electrically coupled to the phase change material (10), a second switch terminal (Tb) electrically coupled to the phase change material (10), a first heater power terminal (Ha) electrically coupled to the heater, and a second heater power terminal (Hb) electrically coupled to the heater, Wherein the first switch terminal (Ta) of the second phase change switch is electrically coupled to the first heater power terminal (Ha) of the first phase change switch.

2. The phase-change switch device of claim 1, wherein the first switch terminal (Ta) of the second phase-change switch is electrically coupled to the second switch terminal (Tb) of the first phase-change switch.

3. The phase-change switch device according to claim 1 or 2, further comprising an actuation device (20), wherein the actuation device (20) is configured to: Used to switch the phase change switch device between an on state and an off state so that when the second phase change switch is turned on, power is supplied to the first heater terminal of the first phase change switch via the first switch terminal (Ta) of the second phase change switch, the phase change material (10) of the second phase change switch and the second switch terminal (Tb) of the second phase change switch.

4. A phase change switch device, comprising: N stages, wherein N>=2, each stage comprising one or more phase change switches, each phase change switch comprising a phase change material (10), a heater device (11) arranged to heat the phase change material (10), a first switch terminal (Ta) electrically coupled to the phase change material (10), a second switch terminal (Tb) electrically coupled to the phase change material (10), a first heater power terminal (Ha) electrically coupled to the heater, and a second heater power terminal (Hb) electrically coupled to the heater, wherein: For at least one level i, i=N…2, preferably for each phase change switch of all levels i, i=N…2, each of the first heater terminal and the second heater terminal is coupled to the first heater terminal or the second heater terminal of another phase change switch of level i, or is coupled to the first switch terminal (Ta) of the phase change switch of level i-1.

5. The phase-change switch device according to claim 4, wherein the second switch terminal (Tb) of at least one phase-change switch of stage i, i=N . . . 2 is coupled to the first switch terminal (Ta) of the phase-change switch of stage i-1.

6. The phase-change switch device according to claim 5, wherein the second switch terminal (Tb) of each phase-change switch of stage i, i=N . . . 2 is coupled to the first switch terminal (Ta) of the phase-change switch of stage i-1.

7. The phase change switch device according to any one of claims 4 to 6, wherein for each stage i, i=N-1...1, the number of phase change switches is equal to or greater than the number of phase change switches in stage i+1.

8. The phase-change switch device of claim 7, wherein for at least one stage i, i=N-1...1, the number of phase-change switches is equal to the number of phase-change switches in stage i+1.

9. The phase-change switch device of claim 8, wherein for each stage i, i=N-1...1, the number of phase-change switches is equal to the number of phase-change switches in stage i+1.

10. The phase-change switch device according to any one of claims 4 to 6, further comprising an actuation device (20), wherein the actuation device (20) is configured to switch the phase-change switch between an on state and an off state.

11. A phase-change switching device according to claim 10, wherein in the off state of the phase-change switching device, the heater device (11) of each phase-change switch of level i, i=N…2 is decoupled from the actuating device (20) and / or the ground and / or the reference potential through at least one phase-change switch of level i-1.

12. A phase-change switching device according to claim 10 or 11, wherein in order to switch the state of the phase-change switching device from off to on, the actuating device is configured to change the state of the phase-change switch starting in stage 1 and ending in stage N.

13. The phase change switch device according to any one of claims 4 to 12, wherein in at least one level i, i=N-1...2, the phase change switches are divided into M groups, M>=1, each group includes K phase change switches, K>=1, wherein for each group: For phase change switch j=1, the first heater terminal is electrically coupled to the first switch terminal (Ta) of the phase change switch of stage i-1, In the case of K>1, for each phase change switch j, j=1...K-1, the second heater terminal is electrically coupled to the first heater terminal of phase change switch j+1, and For phase change switch j=K, the second heater terminal is coupled to the first switch terminal (Ta) of another phase change switch of stage i-1.

14. A phase change switch device according to any one of claims 4 to 13, wherein in at least one level i, i=N-1…2, the first heater terminal of at least one phase change switch of level i is coupled to the first switch terminal (Ta) of the phase change switch of level i-1, the second heater terminal of at least one other phase change switch of level i is coupled to the first switch terminal (Ta) of the phase change switch of level i-1, and the first heater terminal and the second heater terminal of all phase change switches of level i that are not coupled to the first switch terminal (Ta) of the phase change switch of level i-1 are coupled to another first heater terminal or second heater terminal of the phase change switch of level i.

15. The phase-change switching device according to any one of claims 4 to 14 comprises at least one phase-change switching device according to any one of claims 1 to 3, wherein the first phase-change switch of each phase-change switching device according to any one of claims 1 to 3 is a phase-change switch of level i, i=N…2, and the second phase-change switch of the corresponding phase-change switching device according to any one of claims 1 to 3 is a phase-change switch of level i-1.

16. A method for manufacturing a phase change switching device, comprising: A plurality of phase change switches are provided (60), and the phase change switches are electrically coupled (61) to implement the phase change switch device of any one of claims 1 to 15.

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