A real-time health status monitoring system for photovoltaic modules

Abstract

The present invention discloses a real-time health status monitoring system for photovoltaic components, and relates to the technical field of health monitoring. The present invention comprises: a photovoltaic component information acquisition module, a cell hot spot analysis module, a cell history analysis module, a bypass diode analysis module, a photovoltaic component maintenance processing module and a local database. The present invention screens the cell area with hot spot problems in the photovoltaic component through the relevant data of the photovoltaic component, detects the bypass diodes of the photovoltaic component that need to be repaired, and timely maintains the cell area with hot spot problems in the photovoltaic component. While ensuring the output efficiency of the photovoltaic component, the occurrence rate of irreversible damage to the faulty cell area of ​​the photovoltaic component is reduced, and the bypass diode is timely inspected and repaired, thereby extending the service life of the photovoltaic component.

Description

Technical Field

[0001] The present invention relates to the technical field of health monitoring, and in particular to a photovoltaic component real-time health status monitoring system. Background Art

[0002] With the continuous expansion of photovoltaic power generation, the need for monitoring photovoltaic modules is also increasing. The traditional photovoltaic module monitoring method mainly relies on manual monitoring. Not only can it not monitor photovoltaic modules in real time, but it also relies too much on manual experience to judge whether there is a problem with the photovoltaic modules. If the abnormality of the photovoltaic modules is not discovered in time and the corresponding maintenance is not carried out, the photovoltaic modules are prone to damage. Therefore, it is necessary to study a real-time health status monitoring system for photovoltaic modules.

[0003] Prior art, such as the invention patent application with announcement number: CN117559910A, discloses a real-time health status monitoring system for photovoltaic components, which system includes: real-time monitoring of the health status of photovoltaic components, timely detection of problems and early warning; including an environmental monitoring module for real-time detection of ambient light intensity and temperature; an embedded acquisition module for real-time collection and processing of health status data of photovoltaic components; an adaptive communication module for selecting the optimal communication mode for communication transmission of received health status data; a monitoring platform for receiving health status data of photovoltaic components and comparing the health status data with a set threshold; a fault diagnosis and alarm module for real-time identification of fault types based on the judgment results and fault alarms.

[0004] The prior art, such as the invention patent application with announcement number: CN118174453A, discloses a distributed photovoltaic power station intelligent monitoring platform and method, the system of which includes: accurately predicting the status and future development of the photovoltaic power station by building a fault prediction model, discovering problems in advance and making corresponding adjustments. Building a data analysis algorithm to maximize the benefits of the system and match it with the power grid's absorption capacity, more efficiently utilize photovoltaic power generation resources, reduce energy waste, improve energy utilization, and reduce the load pressure of the power grid.

[0005] It can be seen from the above scheme that the current photovoltaic module monitoring system lacks certain attention to the comprehensive analysis of hot spots in each cell area of ​​the photovoltaic module. In actual applications, due to obstruction by external objects or problems with the cells themselves, the cells of the photovoltaic module are prone to hot spot problems, resulting in abnormal heating of the cells of the photovoltaic module, thereby reducing the output efficiency of the photovoltaic module. If not handled in time, it may even cause irreversible damage to the faulty cell area of ​​the photovoltaic module. At the same time, there is a lack of attention to the fault analysis of the bypass diode based on the historical data of the photovoltaic module. The bypass diode of the photovoltaic module can alleviate the occurrence of the hot spot effect to a certain extent. If the faulty bypass diode is not repaired in time, it is easy to cause frequent hot spot problems in the cell area under the jurisdiction of the faulty bypass diode, thereby reducing the service life of the photovoltaic module. Summary of the invention

[0006] The purpose of the present invention is to provide a photovoltaic module real-time health status monitoring system, which solves the problems existing in the background technology.

[0007] In order to solve the above technical problems, the present invention adopts the following technical solutions: The present invention provides a real-time health status monitoring system for photovoltaic components, including: a photovoltaic component information acquisition module, which is used to obtain the total output power, ambient light intensity and ambient temperature value of the photovoltaic component at each monitoring time point within the target monitoring time period, and obtain the temperature value corresponding to each pixel point of the infrared image of each cell area belonging to the photovoltaic component at each monitoring time point.

[0008] The cell hot spot analysis module is used to obtain the type of cells belonging to the photovoltaic module, screen the hot spot cell areas belonging to the photovoltaic module, obtain the color image of the hot spot cell areas belonging to the photovoltaic module, and screen the blocked cell areas and faulty cell areas belonging to the photovoltaic module.

[0009] The cell history analysis module is used to analyze the historical failure coefficients of each faulty cell area of ​​the photovoltaic module.

[0010] The bypass diode analysis module is used to obtain the bypass diodes and their numbers corresponding to each faulty cell area of ​​the photovoltaic module, and map the faulty cell areas corresponding to each bypass diode of the photovoltaic module, obtain the appearance area image of each bypass diode of the photovoltaic module, and screen the maintenance bypass diodes of the photovoltaic module.

[0011] The photovoltaic module maintenance processing module is used to calculate the number of replacements for the faulty cells of the photovoltaic module, send the maintenance bypass diodes of the photovoltaic module and their numbers, the blocked cell areas and the faulty cell areas to the person in charge of photovoltaic module maintenance, and send the number of replacements for the faulty cells of the photovoltaic module to the person in charge of photovoltaic module maintenance.

[0012] Preferably, the specific screening method for screening each hot spot cell area belonging to the photovoltaic module is: calculating the power reduction threat coefficient B of the photovoltaic module.

[0013] Calculate the temperature threat coefficient φ of each cell area of ​​the photovoltaic module n , where n represents the number of each battery cell area, n=1, 2, ..., m, and m is a positive integer greater than 2.

[0014] Calculate the hot spot hazard coefficient of each cell area of ​​the photovoltaic module

[0015] The hot spot hazard coefficient threshold is obtained from the local database, and the hot spot hazard coefficient of each cell area belonging to the photovoltaic module is compared with the hot spot hazard coefficient threshold. If the hot spot hazard coefficient of a cell area belonging to the photovoltaic module is greater than the hot spot hazard coefficient threshold, the cell area is marked as a hot spot cell area, thereby screening the hot spot cell areas belonging to the photovoltaic module.

[0016] Preferably, the power reduction threat coefficient of the photovoltaic module is calculated by: obtaining the conversion power per unit light intensity of each type of battery cell from a local database, and mapping the conversion power A per unit light intensity of the battery cell to the photovoltaic module based on the type of battery cell to which the photovoltaic module belongs.

[0017] According to the total output power a of the photovoltaic module at each monitoring time point x and ambient light intensity b x , where x represents the number of each monitoring time point, x=1,2,...,y, y is a positive integer greater than 2, and the power reduction ratio coefficient of the photovoltaic module is calculated Where y represents the number of monitoring time points.

[0018] The power reduction threat coefficient corresponding to each power reduction ratio coefficient interval is obtained from the local database, and the power reduction threat coefficient of the photovoltaic module is mapped.

[0019] Preferably, the temperature threat coefficient of each cell area of ​​the photovoltaic module is calculated by: according to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , where i represents the number of each pixel, i = 1, 2, ..., j, j is a positive integer greater than 2, and is based on the ambient temperature value d of the photovoltaic module at each monitoring time point x , calculate the ultra-ambient temperature hazard coefficient of each pixel point in each cell area of ​​the photovoltaic module at each monitoring time point Where e is a natural constant.

[0020] The ultra-ambient temperature hazard coefficient threshold is obtained from the local database, and the ultra-ambient temperature hazard coefficient of each pixel point of each cell area of ​​the photovoltaic module at each monitoring time point is compared with the ultra-ambient temperature hazard coefficient threshold. If the ultra-ambient temperature hazard coefficient of a pixel point of a cell area of ​​the photovoltaic module at a certain monitoring time point is greater than the ultra-ambient temperature hazard coefficient threshold, the pixel point is marked as a hazard pixel point, thereby screening the hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point, and counting the number of hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point. nx , and count the total number of pixels F in each cell area of ​​the photovoltaic module at each monitoring time point nx .

[0021] Calculate the temperature deviation coefficient ε of each cell area of ​​the photovoltaic module at each monitoring time point nx .

[0022] Calculate the temperature threat coefficient of each cell area of ​​the photovoltaic module

[0023]

[0024] Preferably, the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point is calculated by: according to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , calculate the average temperature value g of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nx , calculate the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point Where m is the number of cell areas.

[0025] Preferably, the screening of each blocked cell area and each faulty cell area belonging to the photovoltaic module is carried out by obtaining the grayscale value h of each pixel of the initial color image of each hot spot cell area belonging to the photovoltaic module from the local database. pi , where p represents the number of each hot spot cell area, p=1,2,...,q, and q is a positive integer greater than 2.

[0026] According to the color image of each hot spot cell area of ​​the photovoltaic module, each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is extracted, and the gray value k of each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is obtained through grayscale transformation. pi .

[0027] Calculate the grayscale variation anomaly coefficient of each hot spot cell area of ​​the photovoltaic module

[0028]

[0029] The grayscale variation anomaly coefficient threshold is obtained from the local database, and the grayscale variation anomaly coefficient of each hot spot cell area belonging to the photovoltaic module is compared with the grayscale variation anomaly coefficient threshold. If the grayscale variation anomaly coefficient of a hot spot cell area belonging to the photovoltaic module is greater than the grayscale variation anomaly coefficient threshold, the hot spot cell area is marked as a blocked cell area; otherwise, the hot spot cell area is marked as a faulty cell area, thereby screening the blocked cell areas and the faulty cell areas belonging to the photovoltaic module.

[0030] Preferably, the historical failure coefficient of each faulty cell area of ​​the photovoltaic module is analyzed, and the specific analysis method is: obtaining each historical monitoring time period and each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair from the local database, extracting the starting time point of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair, and combining with the starting time point of the target monitoring time period, calculating the interval time length t of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair. vr , where v represents the number of each faulty cell area, v = 1, 2, ..., w, w is a positive integer greater than 2, and the number of historical fault monitoring time periods u of each faulty cell area of ​​the PV module after the last bypass diode repair is counted v , and count the number of faulty cell areas of the photovoltaic module in the historical monitoring time period after the last bypass diode maintenance N v .

[0031] Obtain the fault tolerance interval time T from the local database and calculate the historical fault coefficient of each faulty cell area of ​​the PV module

[0032]

[0033] Preferably, the specific screening method for screening the maintenance bypass diodes of the photovoltaic module is: according to the historical failure coefficients of the faulty cell areas belonging to the photovoltaic module, the historical failure coefficients of the faulty cell areas corresponding to the bypass diodes of the photovoltaic module are obtained.

[0034] The historical fault coefficient threshold is obtained from the local database, and the historical fault coefficient of each faulty cell area corresponding to each bypass diode of the photovoltaic module is compared with the historical fault coefficient threshold. If the historical fault coefficient of a faulty cell area corresponding to a bypass diode of the photovoltaic module is greater than the historical fault coefficient threshold, the faulty cell area is marked as the target cell area, thereby screening the target cell areas corresponding to each bypass diode of the photovoltaic module, and counting the number H of the target cell areas of each bypass diode of the photovoltaic module D , where D represents the number of each bypass diode, D=1,2,...,F, and F is a positive integer greater than 2.

[0035] According to the appearance area image of each bypass diode of the photovoltaic module, the appearance burnout coefficient λ of each bypass diode of the photovoltaic module is calculated. D .

[0036] Obtain the number of solar cell areas E governed by each bypass diode from the local database and calculate the failure coefficient of each bypass diode of the photovoltaic module

[0037] The fault coefficient threshold of the bypass diode is obtained from the local database, and the fault coefficient of each bypass diode of the photovoltaic module is compared with the fault coefficient threshold. If the fault coefficient of a bypass diode of the photovoltaic module is greater than the fault coefficient threshold, the bypass diode is marked as a maintenance bypass diode, thereby screening the maintenance bypass diodes of the photovoltaic module.

[0038] Preferably, the specific calculation method of calculating the appearance burnout coefficient of each bypass diode of the photovoltaic module is as follows: based on the appearance area image of each bypass diode of the photovoltaic module, and through grayscale transformation, the grayscale value G of each pixel point of the appearance area image of each bypass diode of the photovoltaic module is obtained. DJ , where J is the number of each pixel point of the appearance area image of the bypass diode, J=1,2,...,K.

[0039] Obtain the gray value Y of each pixel of the initial appearance area image of each bypass diode of the photovoltaic module from the local database DJ , calculate the appearance burnout coefficient of each bypass diode of the photovoltaic module

[0040] Preferably, the method for calculating the number of replacement faulty cells of the photovoltaic module is as follows: based on each faulty cell area of ​​the photovoltaic module, the number of faulty cell areas of the photovoltaic module is counted, and used as the number of replacement faulty cells of the photovoltaic module.

[0041] The beneficial effects of the present invention are as follows: (1) The photovoltaic module information acquisition module of the present invention acquires relevant data of the photovoltaic modules, thereby facilitating subsequent analysis.

[0042] (2) The cell hot spot analysis module of the present invention uses the relevant data of the photovoltaic modules to screen the cell areas with hot spot problems in the photovoltaic modules, and conducts secondary screening by determining whether the hot spot problem is caused by external objects or problems with the cell itself, thereby facilitating subsequent processing.

[0043] (3) The cell history analysis module of the present invention analyzes the historical data of each faulty cell area of ​​the photovoltaic module screened this time, so as to facilitate the subsequent analysis of the bypass diode.

[0044] (4) The bypass diode analysis module of the present invention detects bypass diodes of photovoltaic modules that need to be repaired, thereby facilitating subsequent processing.

[0045] (5) The photovoltaic module maintenance and processing module of the present invention timely maintains the cell area of ​​the photovoltaic module with hot spot problems. While ensuring the output efficiency of the photovoltaic module, it also reduces the incidence of irreversible damage to the faulty cell area of ​​the photovoltaic module and performs timely maintenance on the bypass diode, thereby extending the service life of the photovoltaic module. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0047] Figure 1 It is a schematic diagram of the system module of the present invention. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0049] Reference Figure 1As shown, the present invention provides a photovoltaic module real-time health status monitoring system, including: a photovoltaic module information acquisition module, a cell hot spot analysis module, a cell history analysis module, a bypass diode analysis module, a photovoltaic module maintenance processing module and a local database

[0050] It should be noted that the photovoltaic module information acquisition module is connected to the cell hot spot analysis module, the cell hot spot analysis module is connected to the cell history analysis module, the cell history analysis module is connected to the bypass diode analysis module, the bypass diode analysis module is connected to the photovoltaic module maintenance processing module, and the local database is connected to the photovoltaic module information acquisition module, the cell hot spot analysis module, the cell history analysis module, the bypass diode analysis module, and the photovoltaic module maintenance processing module.

[0051] It should also be noted that the local database is used to store the type of battery cells belonging to the photovoltaic module, the hot spot hazard coefficient threshold, the conversion power of each type of battery cell per unit light intensity, the power reduction threat coefficient corresponding to each power reduction ratio coefficient interval, the ultra-ambient temperature hazard coefficient threshold, the grayscale value of each pixel of the initial color image of each hot spot battery cell area belonging to the photovoltaic module, the grayscale change abnormal coefficient threshold, the historical monitoring time periods and historical fault monitoring time periods of each faulty battery cell area belonging to the photovoltaic module after the last bypass diode maintenance, the fault allowable interval length, the bypass diodes and their numbers corresponding to each faulty battery cell area belonging to the photovoltaic module, the historical fault coefficient threshold, the number of battery cell areas governed by each bypass diode, the fault coefficient threshold of the bypass diode, and the grayscale value of each pixel of the initial appearance area image of each bypass diode of the photovoltaic module.

[0052] The photovoltaic component information acquisition module is used to obtain the total output power, ambient light intensity and ambient temperature value of the photovoltaic component at each monitoring time point within the target monitoring time period, and obtain the temperature value corresponding to each pixel point of the infrared image of each cell area belonging to the photovoltaic component at each monitoring time point.

[0053] In a specific embodiment, the total output power, ambient light intensity and ambient temperature value of the photovoltaic component at each monitoring time point within the target monitoring time period are obtained, and the temperature value corresponding to each pixel point of the infrared image of each cell area belonging to the photovoltaic component at each monitoring time point is obtained. The specific acquisition method is: obtaining the total output power of the photovoltaic component at each monitoring time point within the target monitoring time period through the photovoltaic component control terminal, obtaining the ambient light intensity and ambient temperature value of the photovoltaic component at each monitoring time point within the target monitoring time period through the meteorological data platform, and obtaining the temperature value corresponding to each pixel point of the infrared image of each cell area belonging to the photovoltaic component at each monitoring time point through the infrared camera.

[0054] The photovoltaic module information acquisition module of the present invention acquires relevant data of the photovoltaic modules, thereby facilitating subsequent analysis.

[0055] The cell hot spot analysis module is used to obtain the type of cells belonging to the photovoltaic module, screen the hot spot cell areas belonging to the photovoltaic module, obtain color images of the hot spot cell areas belonging to the photovoltaic module, and screen the blocked cell areas and faulty cell areas belonging to the photovoltaic module.

[0056] In a specific embodiment, the color image of each hot spot cell area of ​​the photovoltaic module is obtained by a specific method: the color image of each hot spot cell area of ​​the photovoltaic module is obtained from an infrared camera.

[0057] In a specific embodiment, the method for obtaining the type of the solar cell to which the photovoltaic module belongs is: obtaining the type of the solar cell to which the photovoltaic module belongs from a local database.

[0058] It should be noted that the types of battery cells include: monocrystalline silicon, polycrystalline silicon and other types.

[0059] In a specific embodiment of the present invention, the screening of each hot spot cell area belonging to the photovoltaic module is carried out by calculating the power reduction threat coefficient B of the photovoltaic module.

[0060] Calculate the temperature threat coefficient φ of each cell area of ​​the photovoltaic module n , where n represents the number of each battery cell area, n=1, 2, ..., m, and m is a positive integer greater than 2.

[0061] Calculate the hot spot hazard coefficient of each cell area of ​​the photovoltaic module

[0062] The hot spot hazard coefficient threshold is obtained from the local database, and the hot spot hazard coefficient of each cell area belonging to the photovoltaic module is compared with the hot spot hazard coefficient threshold. If the hot spot hazard coefficient of a cell area belonging to the photovoltaic module is greater than the hot spot hazard coefficient threshold, the cell area is marked as a hot spot cell area, thereby screening the hot spot cell areas belonging to the photovoltaic module.

[0063] In a specific embodiment of the present invention, the power reduction threat coefficient of the photovoltaic module is calculated by: obtaining the conversion power per unit light intensity of each type of battery cell from a local database, and mapping the conversion power A per unit light intensity of the battery cell to which the photovoltaic module belongs based on the type of battery cell to which the photovoltaic module belongs.

[0064] According to the total output power a of the photovoltaic module at each monitoring time point x and ambient light intensity b x, where x represents the number of each monitoring time point, x=1,2,...,y, y is a positive integer greater than 2, and the power reduction ratio coefficient of the photovoltaic module is calculated Where y represents the number of monitoring time points.

[0065] The power reduction threat coefficient corresponding to each power reduction ratio coefficient interval is obtained from the local database, and the power reduction threat coefficient of the photovoltaic module is mapped.

[0066] It should be noted that the power reduction ratio coefficient is negatively correlated with the power reduction threat coefficient. The smaller the power reduction ratio coefficient, the larger the corresponding power reduction threat coefficient.

[0067] In a specific embodiment of the present invention, the temperature threat coefficient of each cell area of ​​the photovoltaic module is calculated by: according to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , where i represents the number of each pixel, i = 1, 2, ..., j, j is a positive integer greater than 2, and is based on the ambient temperature value d of the photovoltaic module at each monitoring time point x , calculate the ultra-ambient temperature hazard coefficient of each pixel point in each cell area of ​​the photovoltaic module at each monitoring time point Where e is a natural constant.

[0068] The ultra-ambient temperature hazard coefficient threshold is obtained from the local database, and the ultra-ambient temperature hazard coefficient of each pixel point of each cell area of ​​the photovoltaic module at each monitoring time point is compared with the ultra-ambient temperature hazard coefficient threshold. If the ultra-ambient temperature hazard coefficient of a pixel point of a cell area of ​​the photovoltaic module at a certain monitoring time point is greater than the ultra-ambient temperature hazard coefficient threshold, the pixel point is marked as a hazard pixel point, thereby screening the hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point, and counting the number of hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point. nx , and count the total number of pixels F in each cell area of ​​the photovoltaic module at each monitoring time point nx .

[0069] Calculate the temperature deviation coefficient ε of each cell area of ​​the photovoltaic module at each monitoring time point nx .

[0070] Calculate the temperature threat coefficient of each cell area of ​​the photovoltaic module

[0071]

[0072] In a specific embodiment of the present invention, the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point is calculated by: according to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , calculate the average temperature value g of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nx , calculate the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point Where m is the number of cell areas.

[0073] In a specific embodiment of the present invention, the screening of each blocked cell area and each faulty cell area belonging to the photovoltaic module is carried out by obtaining the grayscale value h of each pixel of the initial color image of each hot spot cell area belonging to the photovoltaic module from the local database. pi , where p represents the number of each hot spot cell area, p=1,2,...,q, and q is a positive integer greater than 2.

[0074] According to the color image of each hot spot cell area of ​​the photovoltaic module, each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is extracted, and the gray value k of each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is obtained through grayscale transformation. pi .

[0075] Calculate the grayscale variation anomaly coefficient of each hot spot cell area of ​​the photovoltaic module

[0076]

[0077] The grayscale variation anomaly coefficient threshold is obtained from the local database, and the grayscale variation anomaly coefficient of each hot spot cell area belonging to the photovoltaic module is compared with the grayscale variation anomaly coefficient threshold. If the grayscale variation anomaly coefficient of a hot spot cell area belonging to the photovoltaic module is greater than the grayscale variation anomaly coefficient threshold, the hot spot cell area is marked as a blocked cell area; otherwise, the hot spot cell area is marked as a faulty cell area, thereby screening the blocked cell areas and the faulty cell areas belonging to the photovoltaic module.

[0078] The cell hot spot analysis module of the present invention uses relevant data of photovoltaic modules to screen cell areas with hot spot problems in photovoltaic modules, and performs secondary screening by determining whether the hot spot problem is caused by obstruction by external objects or problems with the cell itself, thereby facilitating subsequent processing.

[0079] The cell history analysis module is used to analyze the historical failure coefficients of each failed cell area of ​​the photovoltaic module.

[0080] In a specific embodiment of the present invention, the historical failure coefficient of each faulty cell area of ​​the photovoltaic module is analyzed, and the specific analysis method is: obtaining each historical monitoring time period and each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair from the local database, extracting the starting time point of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair, and combining with the starting time point of the target monitoring time period, calculating the interval time length t of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair vr , where v represents the number of each faulty cell area, v = 1, 2, ..., w, w is a positive integer greater than 2, and the number of historical fault monitoring time periods u of each faulty cell area of ​​the PV module after the last bypass diode repair is counted v , and count the number of faulty cell areas of the photovoltaic module in the historical monitoring time period after the last bypass diode maintenance N v .

[0081] Obtain the fault tolerance interval time T from the local database and calculate the historical fault coefficient of each faulty cell area of ​​the PV module

[0082]

[0083] In a specific embodiment, the calculation method of the interval duration of each historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component after the last bypass diode maintenance is as follows: subtract the starting time point of the last historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component after the last bypass diode maintenance from the starting time point of the target monitoring time period, thereby obtaining the interval duration of the last historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component; subtract the starting time point of the second-to-last historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component after the last bypass diode maintenance from the starting time point of the last historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component after the last bypass diode maintenance, thereby obtaining the interval duration of the second-to-last historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component; and so on, thereby obtaining the interval duration of each historical fault monitoring time period of each faulty cell area belonging to the photovoltaic component after the last bypass diode maintenance.

[0084] The cell history analysis module of the present invention analyzes the historical data of each faulty cell area of ​​the photovoltaic assembly screened this time, so as to facilitate the subsequent analysis of the bypass diode.

[0085] The bypass diode analysis module is used to obtain the bypass diodes and their numbers corresponding to each faulty cell area of ​​the photovoltaic module, and map the faulty cell areas corresponding to each bypass diode of the photovoltaic module, obtain the appearance area image of each bypass diode of the photovoltaic module, and screen the maintenance bypass diodes of the photovoltaic module.

[0086] In a specific embodiment, the appearance area image of each bypass diode of the photovoltaic module is obtained by a specific method: the appearance area image of each bypass diode of the photovoltaic module can be obtained by a built-in micro high-definition camera in the photovoltaic module.

[0087] In a specific embodiment, the bypass diodes and their numbers corresponding to each faulty cell area of ​​the photovoltaic module are obtained by: obtaining the bypass diodes and their numbers corresponding to each faulty cell area of ​​the photovoltaic module from a local database.

[0088] In a specific embodiment of the present invention, the specific screening method for screening the maintenance bypass diodes of the photovoltaic module is: based on the historical failure coefficients of the faulty cell areas to which the photovoltaic module belongs, the historical failure coefficients of the faulty cell areas corresponding to the bypass diodes of the photovoltaic module are obtained.

[0089] The historical fault coefficient threshold is obtained from the local database, and the historical fault coefficient of each faulty cell area corresponding to each bypass diode of the photovoltaic module is compared with the historical fault coefficient threshold. If the historical fault coefficient of a faulty cell area corresponding to a bypass diode of the photovoltaic module is greater than the historical fault coefficient threshold, the faulty cell area is marked as the target cell area, thereby screening the target cell areas corresponding to each bypass diode of the photovoltaic module, and counting the number H of the target cell areas of each bypass diode of the photovoltaic module D , where D represents the number of each bypass diode, D=1,2,...,F, and F is a positive integer greater than 2.

[0090] According to the appearance area image of each bypass diode of the photovoltaic module, the appearance burnout coefficient λ of each bypass diode of the photovoltaic module is calculated. D .

[0091] Obtain the number of solar cell areas E governed by each bypass diode from the local database and calculate the failure coefficient of each bypass diode of the photovoltaic module

[0092] The fault coefficient threshold of the bypass diode is obtained from the local database, and the fault coefficient of each bypass diode of the photovoltaic module is compared with the fault coefficient threshold. If the fault coefficient of a bypass diode of the photovoltaic module is greater than the fault coefficient threshold, the bypass diode is marked as a maintenance bypass diode, thereby screening the maintenance bypass diodes of the photovoltaic module.

[0093] In a specific embodiment of the present invention, the calculation method of the appearance burnout coefficient of each bypass diode of the photovoltaic module is as follows: based on the appearance area image of each bypass diode of the photovoltaic module, and through grayscale transformation, the grayscale value G of each pixel point of the appearance area image of each bypass diode of the photovoltaic module is obtained. DJ , where J is the number of each pixel point of the appearance area image of the bypass diode, J=1,2,...,K.

[0094] Obtain the gray value Y of each pixel of the initial appearance area image of each bypass diode of the photovoltaic module from the local database DJ , calculate the appearance burnout coefficient of each bypass diode of the photovoltaic module

[0095] The bypass diode analysis module of the present invention detects bypass diodes of photovoltaic components that need to be repaired, thereby facilitating subsequent processing.

[0096] The photovoltaic module maintenance processing module is used to calculate the number of replacements for the faulty cells of the photovoltaic module, send the maintenance bypass diodes of the photovoltaic module and their numbers, the blocked cell areas and the faulty cell areas to the person in charge of photovoltaic module maintenance, and send the number of replacements for the faulty cells of the photovoltaic module to the person in charge of photovoltaic module maintenance.

[0097] In a specific embodiment of the present invention, the method for calculating the number of replacements for faulty cells of a photovoltaic module is as follows: based on each faulty cell area of ​​the photovoltaic module, the number of faulty cell areas of the photovoltaic module is counted, and used as the number of replacements for the faulty cell of the photovoltaic module.

[0098] The photovoltaic module maintenance and processing module of the present invention timely maintains the cell area of ​​the photovoltaic module with hot spot problems, thereby ensuring the output efficiency of the photovoltaic module and reducing the occurrence rate of irreversible damage to the faulty cell area of ​​the photovoltaic module, and timely inspects the bypass diode, thereby extending the service life of the photovoltaic module.

[0099] The above contents are merely examples and explanations of the concept of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the concept of the invention or exceed the scope defined by the present invention, they shall all fall within the protection scope of the present invention.

Claims

1. A photovoltaic module real-time health status monitoring system, characterized in that: include: The photovoltaic module information acquisition module is used to obtain the total output power, ambient light intensity and ambient temperature of the photovoltaic module at each monitoring time point within the target monitoring time period, and obtain the temperature value corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point; The cell hot spot analysis module is used to obtain the type of cells belonging to the photovoltaic module, screen the hot spot cell areas belonging to the photovoltaic module, obtain the color image of the hot spot cell areas belonging to the photovoltaic module, and screen the blocked cell areas and faulty cell areas belonging to the photovoltaic module; The specific screening method for screening the hot spot cell areas of the photovoltaic module is as follows: Calculate the power reduction threat factor B of the photovoltaic module; Calculate the temperature threat coefficient φ of each cell area of ​​the photovoltaic module n , where n represents the number of each battery cell area, n=1,2,...,m, and m is a positive integer greater than 2; Calculate the hot spot hazard coefficient of each cell area of ​​the photovoltaic module Obtaining a hot spot hazard coefficient threshold from a local database, comparing the hot spot hazard coefficient of each cell area belonging to the photovoltaic module with the hot spot hazard coefficient threshold, if the hot spot hazard coefficient of a cell area belonging to the photovoltaic module is greater than the hot spot hazard coefficient threshold, marking the cell area as a hot spot cell area, thereby screening the hot spot cell areas belonging to the photovoltaic module; The specific calculation method of calculating the power reduction threat coefficient of the photovoltaic module is as follows: Obtain the conversion power per unit light intensity of each type of cell from the local database, and map the conversion power per unit light intensity of the cell of the photovoltaic module to obtain the conversion power A of the cell of the photovoltaic module according to the type of the cell of the photovoltaic module; According to the total output power a of the photovoltaic module at each monitoring time point x and ambient light intensity b x , where x represents the number of each monitoring time point, x=1,2,...,y, y is a positive integer greater than 2, and the power reduction ratio coefficient of the photovoltaic module is calculated Where y represents the number of monitoring time points; Obtain the power reduction threat coefficient corresponding to each power reduction ratio coefficient interval from the local database, and map it to obtain the power reduction threat coefficient of the photovoltaic module; The specific calculation method for calculating the temperature threat coefficient of each cell area of ​​the photovoltaic module is as follows: According to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , where i represents the number of each pixel, i = 1, 2, ..., j, j is a positive integer greater than 2, and is based on the ambient temperature value d of the photovoltaic module at each monitoring time point x , calculate the ultra-ambient temperature hazard coefficient of each pixel point in each cell area of ​​the photovoltaic module at each monitoring time point Where e is a natural constant; The ultra-ambient temperature hazard coefficient threshold is obtained from the local database, and the ultra-ambient temperature hazard coefficient of each pixel point of each cell area of ​​the photovoltaic module at each monitoring time point is compared with the ultra-ambient temperature hazard coefficient threshold. If the ultra-ambient temperature hazard coefficient of a pixel point of a cell area of ​​the photovoltaic module at a certain monitoring time point is greater than the ultra-ambient temperature hazard coefficient threshold, the pixel point is marked as a hazard pixel point, thereby screening the hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point, and counting the number of hazard pixels of each cell area of ​​the photovoltaic module at each monitoring time point. nx , and count the total number of pixels F in each cell area of ​​the photovoltaic module at each monitoring time point nx ; Calculate the temperature deviation coefficient ε of each cell area of ​​the photovoltaic module at each monitoring time point nx ; Calculate the temperature threat coefficient of each cell area of ​​the photovoltaic module The cell history analysis module is used to analyze the historical failure coefficients of each faulty cell area of ​​the photovoltaic module; The specific analysis method for analyzing the historical failure coefficients of each faulty cell area of ​​the photovoltaic module is as follows: Obtain each historical monitoring time period and each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair from the local database, extract the starting time point of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair, and combine with the starting time point of the target monitoring time period to calculate the interval length t of each historical fault monitoring time period of each faulty cell area of ​​the photovoltaic module after the last bypass diode repair vr , where v represents the number of each faulty cell area, v = 1, 2, ..., w, w is a positive integer greater than 2, and the number of historical fault monitoring time periods u of each faulty cell area of ​​the PV module after the last bypass diode repair is counted v , and count the number of faulty cell areas of the photovoltaic module in the historical monitoring time period after the last bypass diode maintenance N v ; Obtain the fault tolerance interval time T from the local database and calculate the historical fault coefficient of each faulty cell area of ​​the PV module The bypass diode analysis module is used to obtain the bypass diodes and their numbers corresponding to the faulty cell areas of the photovoltaic module, and map the faulty cell areas corresponding to the bypass diodes of the photovoltaic module, obtain the appearance area images of the bypass diodes of the photovoltaic module, and screen the repair bypass diodes of the photovoltaic module; The photovoltaic module maintenance processing module is used to calculate the number of replacements for the faulty cells of the photovoltaic module, send the maintenance bypass diodes of the photovoltaic module and their numbers, the blocked cell areas and the faulty cell areas to the person in charge of photovoltaic module maintenance, and send the number of replacements for the faulty cells of the photovoltaic module to the person in charge of photovoltaic module maintenance.

2. A photovoltaic module real-time health status monitoring system according to claim 1, characterized in that: The specific calculation method for calculating the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point is: According to the temperature value c corresponding to each pixel point of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nxi , calculate the average temperature value g of the infrared image of each cell area of ​​the photovoltaic module at each monitoring time point nx , calculate the temperature deviation coefficient of each cell area of ​​the photovoltaic module at each monitoring time point Where m is the number of cell areas.

3. A photovoltaic module real-time health status monitoring system according to claim 1, characterized in that: The specific screening method for screening each blocked cell area and each faulty cell area belonging to the photovoltaic assembly is as follows: Obtain the grayscale value h of each pixel of the initial color image of each hot spot cell area of ​​the photovoltaic module from the local database pi , where p represents the number of each hot spot cell area, p = 1, 2, ..., q, q is a positive integer greater than 2; According to the color image of each hot spot cell area of ​​the photovoltaic module, each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is extracted, and the gray value k of each pixel point of the color image of each hot spot cell area of ​​the photovoltaic module is obtained through grayscale transformation. pi ; Calculate the grayscale variation anomaly coefficient of each hot spot cell area of ​​the photovoltaic module The grayscale variation anomaly coefficient threshold is obtained from the local database, and the grayscale variation anomaly coefficient of each hot spot cell area belonging to the photovoltaic module is compared with the grayscale variation anomaly coefficient threshold. If the grayscale variation anomaly coefficient of a hot spot cell area belonging to the photovoltaic module is greater than the grayscale variation anomaly coefficient threshold, the hot spot cell area is marked as a blocked cell area; otherwise, the hot spot cell area is marked as a faulty cell area, thereby screening the blocked cell areas and the faulty cell areas belonging to the photovoltaic module.

4. A photovoltaic module real-time health status monitoring system according to claim 1, characterized in that: The specific screening method for screening the maintenance bypass diodes of the photovoltaic modules is as follows: According to the historical failure coefficients of each faulty cell area of ​​the photovoltaic module, the historical failure coefficients of each faulty cell area corresponding to each bypass diode of the photovoltaic module are obtained; The historical fault coefficient threshold is obtained from the local database, and the historical fault coefficient of each faulty cell area corresponding to each bypass diode of the photovoltaic module is compared with the historical fault coefficient threshold. If the historical fault coefficient of a faulty cell area corresponding to a bypass diode of the photovoltaic module is greater than the historical fault coefficient threshold, the faulty cell area is marked as the target cell area, thereby screening the target cell areas corresponding to each bypass diode of the photovoltaic module, and counting the number H of the target cell areas of each bypass diode of the photovoltaic module D , where D represents the serial number of each bypass diode, D=1,2,...,F, and F is a positive integer greater than 2; According to the appearance area image of each bypass diode of the photovoltaic module, the appearance burnout coefficient λ of each bypass diode of the photovoltaic module is calculated. D ; Obtain the number of solar cell areas E governed by each bypass diode from the local database and calculate the failure coefficient of each bypass diode of the photovoltaic module The fault coefficient threshold of the bypass diode is obtained from the local database, and the fault coefficient of each bypass diode of the photovoltaic module is compared with the fault coefficient threshold. If the fault coefficient of a bypass diode of the photovoltaic module is greater than the fault coefficient threshold, the bypass diode is marked as a maintenance bypass diode, thereby screening the maintenance bypass diodes of the photovoltaic module.

5. A photovoltaic module real-time health status monitoring system according to claim 4, characterized in that: The specific calculation method for calculating the appearance burnout coefficient of each bypass diode of the photovoltaic module is as follows: According to the appearance area image of each bypass diode of the photovoltaic module, the gray value G of each pixel point of the appearance area image of each bypass diode of the photovoltaic module is obtained through grayscale transformation. DJ , where J is the number of each pixel point of the appearance area image of the bypass diode, J=1,2,...,K; Obtain the gray value Y of each pixel of the initial appearance area image of each bypass diode of the photovoltaic module from the local database DJ , calculate the appearance burnout coefficient of each bypass diode of the photovoltaic module 6. A photovoltaic module real-time health status monitoring system according to claim 1, characterized in that: The specific calculation method for calculating the number of replacements for the faulty solar cells of the photovoltaic module is as follows: According to each faulty cell area of ​​the photovoltaic module, the number of faulty cell areas of the photovoltaic module is counted, and the number is used as the replacement number of the faulty cells of the photovoltaic module.

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