Magnetic memory device

Abstract

A magnetic memory device includes: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern; a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern; and a conductive layer on a side surface of the first non-magnetic pattern.

Description

Technical Field

[0001] The present disclosure relates to a magnetic memory device including a magnetic tunnel junction and a method of manufacturing the same. Background Art

[0002] As the demand for electronic devices with increased speed and / or reduced power consumption increases, the demand for semiconductor memory devices with faster operating speeds and / or lower operating voltages will increase. Due to their high-speed operation and / or non-volatility, magnetic memory devices are becoming a promising alternative to traditional semiconductor memory devices.

[0003] Typically, a magnetic memory device includes a magnetic tunnel junction (MTJ) pattern. The MTJ pattern includes two magnetic layers and an insulating layer interposed therebetween. The resistance of the MTJ pattern may vary depending on the magnetization direction of the magnetic layers. For example, the resistance of the MTJ pattern is higher when the magnetization directions of the magnetic layers are antiparallel to each other than when they are parallel to each other. This resistance difference may be used for data storage / reading operations of the magnetic memory device.

[0004] As the electronics industry develops, the demand for optimization and / or low power consumption of magnetic memory devices will increase, and in addition, research is being conducted to improve the reliability of magnetic memory devices. For example, various studies are being conducted to reduce or minimize electrical short circuits between magnetic elements in a magnetic tunnel junction pattern and to reduce the parasitic resistance of the magnetic tunnel junction pattern. Summary of the invention

[0005] Embodiments of the inventive concept provide a magnetic memory device having improved electrical characteristics and a method of manufacturing the same.

[0006] Embodiments of the inventive concept provide a magnetic memory device having improved reliability and a method of manufacturing the same.

[0007] According to an embodiment of the inventive concept, a magnetic memory device may include: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern; a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern; and a conductive layer on a side surface of the first non-magnetic pattern.

[0008] According to an embodiment of the inventive concept, a magnetic memory device may include: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; an electrode, spaced apart from the tunnel barrier pattern, and the free magnetic pattern is located therebetween; a first non-magnetic pattern between the free magnetic pattern and the electrode, the first non-magnetic pattern including a first metal; a second non-magnetic pattern between the first non-magnetic pattern and the electrode, the second non-magnetic pattern including a second metal; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern; and a conductive layer on a side surface of the first non-magnetic pattern. The atomic mass of the first metal may be greater than or equal to the atomic mass of the metal element in the tunnel barrier pattern. The conductive layer may be spaced apart from the side surface of the tunnel barrier pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a circuit diagram exemplarily illustrating a unit memory cell of a magnetic memory device according to an embodiment of the inventive concept.

[0010] Figure 2 , Figure 3 , Figure 4 and Figure 5 are cross-sectional views each illustrating a magnetic memory device according to an embodiment of the inventive concept.

[0011] Figure 6 and Figure 7 is a cross-sectional view illustrating a method of manufacturing a magnetic memory device according to an embodiment of the inventive concept.

[0012] Figure 8 is a plan view illustrating a magnetic memory device according to an embodiment of the inventive concept.

[0013] Fig. 9 is along Figure 8 A cross-sectional view taken along line II' in FIG. DETAILED DESCRIPTION

[0014] Example embodiments of the inventive concepts will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown.

[0015] Figure 11 is a circuit diagram of a unit memory cell of a magnetic memory device according to an embodiment of the inventive concept. The terms "first", "second", etc. may be used here only to distinguish one component, layer, direction, etc. from another component, layer, direction, etc. The terms "comprising", "comprising ...", "including" and / or "including ..." when used here specify the presence of the stated elements, but do not exclude the presence of additional elements. The term "and / or" includes any and all combinations of one or more related listed items. The term "connection" may be used here to refer to physical and / or electrical connections. When a component or layer is referred to here as "directly on ... " or "directly in contact with" or "directly connected", there is no intermediate component or layer.

[0016] Reference Figure 1 , the unit memory cell MC may include a memory device ME and a selection element SE. The memory device ME and the selection element SE may be electrically connected to each other in series. The memory device ME may be provided between and connected to the bit line BL and the selection element SE. The selection element SE may be provided between and connected to the memory device ME and the source line SL, and may be controlled by the word line WL. The selection element SE may include, for example, a bipolar transistor or a metal oxide semiconductor (MOS) field effect transistor.

[0017] The memory device ME may include a magnetic tunnel junction pattern MTJ, and the magnetic tunnel junction pattern MTJ may include a first magnetic structure MP1, a second magnetic structure MP2, and a tunnel barrier pattern TBP between the first magnetic structure MP1 and the second magnetic structure MP2. One of the first magnetic structure MP1 and the second magnetic structure MP2 may be a reference magnetic pattern having a fixed magnetization direction regardless of the presence or absence of an external magnetic field generated under a typical use environment. The other of the first magnetic structure MP1 and the second magnetic structure MP2 may be a free magnetic pattern, whose magnetization direction may be changed to one of two stable magnetization directions by an external magnetic field. The resistance of the magnetic tunnel junction pattern MTJ may be much greater when the magnetization directions of the reference magnetic pattern and the free magnetic pattern are antiparallel than when they are parallel. In other words, the resistance of the magnetic tunnel junction pattern MTJ may be controlled by adjusting the magnetization direction of the free magnetic pattern. Therefore, the resistance difference of the magnetic tunnel junction pattern MTJ caused by the difference in magnetization direction between the reference magnetic pattern and the free magnetic pattern may be used as a mechanism for storing data in the storage element ME or the unit memory cell MC.

[0018] Figure 2 is a cross-sectional view illustrating a magnetic memory device according to an embodiment of the inventive concept.

[0019] Reference Figure 2, a first interlayer insulating layer 110 may be disposed on the substrate 100, and a lower contact plug 115 may be disposed in the first interlayer insulating layer 110. The substrate 100 may be a semiconductor substrate formed of at least one of silicon (Si), silicon germanium (SiGe), germanium (Ge), or gallium arsenide (GaAs), or include at least one of them, or may be a silicon on insulator (SOI) wafer. The first interlayer insulating layer 110 may be formed of at least one of silicon oxide, silicon nitride, and / or silicon oxynitride, or include at least one of them.

[0020] A lower contact plug 115 may be provided to penetrate the first interlayer insulating layer 110 and may be electrically connected to the substrate 100. A selection element (eg, Figure 1 The SE of the selection element may be disposed in the substrate 100. In an embodiment, the selection element may be a field effect transistor. The lower contact plug 115 may be electrically connected to one of the terminals (e.g., source / drain terminals) of the selection element. The lower contact plug 115 may be formed of at least one of a doped semiconductor material (e.g., doped silicon), a metal material (e.g., tungsten, titanium, and / or tantalum), a metal-semiconductor compound (e.g., metal silicide), and a conductive metal nitride (e.g., titanium nitride, tantalum nitride, and / or tungsten nitride), or include at least one of them.

[0021] The bottom electrode BE, the magnetic tunnel junction pattern MTJ, and the top electrode TE may be sequentially stacked on the lower contact plug 115 along a first direction D1 perpendicular to the top surface 100U of the substrate 100. The bottom electrode BE may be disposed between the lower contact plug 115 and the magnetic tunnel junction pattern MTJ, and the magnetic tunnel junction pattern MTJ may be disposed between the bottom electrode BE and the top electrode TE. The bottom electrode BE may be electrically connected to the lower contact plug 115. The bottom electrode BE may be formed of or include at least one of conductive metal nitrides (e.g., titanium nitride or tantalum nitride). The top electrode TE may be formed of or include at least one of a metal material (e.g., Ta, W, Ru, and Ir) or a conductive metal nitride (e.g., TiN).

[0022] The magnetic tunnel junction pattern MTJ may include a reference magnetic pattern PL, a free magnetic pattern FL, and a tunnel barrier pattern TBP between the reference magnetic pattern PL and the free magnetic pattern FL. In some embodiments, the reference magnetic pattern PL may be disposed between the bottom electrode BE and the tunnel barrier pattern TBP, and the free magnetic pattern FL may be disposed between the top electrode TE and the tunnel barrier pattern TBP. In this case, the bottom electrode BE may be referred to as a first electrode, and the top electrode TE may be referred to as a second electrode.

[0023] The reference magnetic pattern PL may include a first pinning pattern PL1, a second pinning pattern PL2 between the first pinning pattern PL1 and the tunnel barrier pattern TBP, and an exchange coupling pattern 130 between the first pinning pattern PL1 and the second pinning pattern PL2. In an embodiment, one of the first pinning pattern PL1 and the second pinning pattern PL2 may be used as a pinned pattern, and the other may be used as a pinning pattern. The magnetization direction MD1 of the first pinning pattern PL1 and the magnetization direction MD2 of the second pinning pattern PL2 may be perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic pattern FL. As an example, the magnetization direction MD1 of the first pinning pattern PL1 and the magnetization direction MD2 of the second pinning pattern PL2 may be perpendicular to the top surface 100U of the substrate 100. The first pinning pattern PL1 may be formed of or include at least one of iron (Fe), cobalt (Co), or nickel (Ni). The first pinning pattern PL1 may include a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, and CoFeDy), a material having L1 0 At least one of a perpendicular magnetic material having a structure, a CoPt-based material having a hexagonal close-packed structure, and a perpendicular magnetic structure. 0 The vertical magnetic material of the structure can include L1 0 FePt, L1 0 FePd, L1 0 CoPd or L1 0 At least one of Co / Pt. The perpendicular magnetic structure may include alternating and repeatedly stacked magnetic layers and non-magnetic layers. As an example, the perpendicular magnetic structure may include (Co / Pt) n 、(CoFe / Pt) n 、(CoFe / Pd) n 、(Co / Pd) n 、(Co / Ni) n 、(CoNi / Pt) n 、(CoCr / Pt) n or (CoCr / Pd) n , where “n” is a natural number equal to or greater than 2. The second pinning pattern PL2 may be formed of or include at least one of iron (Fe), cobalt (Co), or nickel (Ni).

[0024] Due to the exchange coupling pattern 130, the first pinning pattern PL1 and the second pinning pattern PL2 may be antiferromagnetically coupled to each other. The exchange coupling pattern 130 may include a non-magnetic material having an antiferromagnetic coupling property. As an example, the exchange coupling pattern 130 may be formed of or include at least one of iridium (Ir) or ruthenium (Ru). The second pinning pattern PL2 may be antiferromagnetically coupled to the first pinning pattern PL1 through the exchange coupling pattern 130. In this case, the magnetization direction MD2 of the second pinning pattern PL2 may be antiparallel to the magnetization direction MD1 of the first pinning pattern PL1.

[0025] The magnetic tunnel junction pattern MTJ may further include a seed pattern 120 between the bottom electrode BE and the reference magnetic pattern PL. The seed pattern 120 may include a material that promotes or accelerates crystal growth of the reference magnetic pattern PL. For example, the seed pattern 120 may be formed of at least one of chromium (Cr), iridium (Ir), or ruthenium (Ru), or include at least one of them.

[0026] The tunnel barrier pattern TBP may include a metal oxide layer. The tunnel barrier pattern TBP may include, for example, at least one of magnesium oxide, titanium oxide, aluminum oxide, magnesium zinc oxide, or magnesium boron oxide.

[0027] The free magnetic pattern FL may have a perpendicular magnetization characteristic due to magnetic anisotropy caused by contact between the free magnetic pattern FL and the tunnel barrier pattern TBP. The magnetization direction MDf of the free magnetic pattern FL may be changed to be parallel or anti-parallel to the magnetization direction MD2 of the second pinning pattern PL2. The free magnetic pattern FL may be formed of or include a magnetic material that may induce magnetic anisotropy at an interface between the free magnetic pattern FL and the tunnel barrier pattern TBP. In an embodiment, the free magnetic pattern FL may be formed of or include cobalt iron boron (CoFeB).

[0028] The magnetic tunnel junction pattern MTJ may further include a first nonmagnetic pattern 140 between the free magnetic pattern FL and the top electrode TE, a second nonmagnetic pattern 160 between the first nonmagnetic pattern 140 and the top electrode TE, and a metal pattern 150 between the first nonmagnetic pattern 140 and the second nonmagnetic pattern 160. The first nonmagnetic pattern 140 may control the perpendicular magnetic anisotropy characteristic of the free magnetic pattern FL. Due to the magnetic anisotropy induced at the interface between the first nonmagnetic pattern 140 and the free magnetic pattern FL, the perpendicular magnetic anisotropy characteristic of the free magnetic pattern FL may be improved.

[0029] The first non-magnetic pattern 140 may include a first metal. The atomic mass of the first metal may be equal to or greater than the atomic mass of the metal element in the tunnel barrier pattern TBP. In some embodiments, the atomic mass of the first metal may be greater than the atomic mass of the metal element in the tunnel barrier pattern TBP. In the case where the metal element in the tunnel barrier pattern TBP is Mg, the first metal may be one of Hf, W, Mo, Ta, or Ir. The first non-magnetic pattern 140 may be formed of at least one of an oxide or nitride material containing the first metal or include at least one of them. In the case where the tunnel barrier pattern TBP includes magnesium oxide (MgO), the first non-magnetic pattern 140 may be formed of at least one of a metal oxide material containing Hf, W, Mo, Ta, Ir, or an alloy thereof, or a metal nitride material containing Hf, W, Mo, Ta, Ir, or an alloy thereof, or include at least one of them. The first non-magnetic pattern 140 may further include boron (B). In some embodiments, the tunnel barrier pattern TBP may be formed of or include magnesium oxide (MgO), and the first nonmagnetic pattern 140 may be formed of or include tantalum oxide (TaO) or tantalum boron oxide (TaBO).

[0030] The second non-magnetic pattern 160 may include a second metal. The second metal may be different from the first metal, and the atomic mass of the second metal may be different from the atomic mass of the first metal. In some embodiments, the atomic mass of the second metal may be greater than the atomic mass of the first metal. In the case where the first metal is tantalum (Ta), the second metal may be one of Ir, Pt or Au. The second non-magnetic pattern 160 may be formed of at least one of an oxide or nitride material containing the second metal, or include at least one of them. In the case where the first non-magnetic pattern 140 includes tantalum oxide (TaO), the second non-magnetic pattern 160 may include at least one of a metal oxide material containing Ir, Pt, Au or an alloy thereof or a metal nitride material containing Ir, Pt, Au or an alloy thereof. The second non-magnetic pattern 160 may further include boron (B). In some embodiments, the first non-magnetic pattern 140 may be formed of or include tantalum oxide (TaO), and the second non-magnetic pattern 160 may be formed of at least one of iridium oxide (IrO) or iridium boron oxide (IrBO), or include at least one of them.

[0031] In some embodiments, a thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be greater than a thickness 140T of the first nonmagnetic pattern 140 in the first direction D1.

[0032] The metal pattern 150 may include at least one of a non-magnetic metal element or a ferromagnetic element. The metal pattern 150 may be formed of or include at least one of a non-magnetic metal element, a ferromagnetic element, or an alloy containing at least one of the elements. As an example, the metal pattern 150 may be formed of or include at least one of Ru, Ir, Pt, Co, Fe, Ni, or an alloy thereof, and may further include boron (B). In an embodiment, the thickness 150T of the metal pattern 150 in the first direction D1 may be in the range from 0.04 to 0.11. arrive The first nonmagnetic pattern 140 and the second nonmagnetic pattern 160 may be spaced apart from each other with the metal pattern 150 interposed therebetween. The metal pattern 150 may separate the first nonmagnetic pattern 140 from the second nonmagnetic pattern 160.

[0033] The magnetic tunnel junction pattern MTJ may further include a capping pattern 170 between the second nonmagnetic pattern 160 and the top electrode TE. The capping pattern 170 may be used to prevent degradation of the free magnetic pattern FL, the first nonmagnetic pattern 140, the metal pattern 150, and the second nonmagnetic pattern 160. In an embodiment, the capping pattern 170 may be formed of at least one of tantalum (Ta), ruthenium (Ru), molybdenum (Mo), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum nitride (TaN), or titanium nitride (TiN), or include at least one of them.

[0034] The conductive layer 180 may cover at least a portion of the side surface of the magnetic tunnel junction pattern MTJ. The term "surrounding" or "covering" or "filling" or "surrounding" used herein may not require completely surrounding or covering or filling or surrounding the described element or layer, but may refer to partially surrounding or covering or filling or surrounding the described element or layer, for example. The conductive layer 180 may cover the side surface of the first non-magnetic pattern 140, and may extend to the area on the side surface of the metal pattern 150 and the side surface of the second non-magnetic pattern 160. The conductive layer 180 may contact the side surface of the first non-magnetic pattern 140. The conductive layer 180 may contact the side surface of the metal pattern 150, and may contact at least a portion of the side surface of the second non-magnetic pattern 160. The conductive layer 180 may be spaced apart from the side surface of the tunnel barrier pattern TBP.

[0035] The conductive layer 180 may include the same material or element as at least one of the layers constituting the magnetic tunnel junction pattern MTJ. The conductive layer 180 may include the same material or element as at least one of the bottom electrode BE and the top electrode TE.

[0036] The magnetic tunnel junction pattern MTJ may be patterned using an ion beam etching process, and conductive etching residues that may be generated during the ion beam etching process may be redeposited on the side surface of the magnetic tunnel junction pattern MTJ. In the case where the conductive etching residues are redeposited on the side surface of the tunnel barrier pattern TBP, an electrical short circuit problem may occur between magnetic patterns in the magnetic tunnel junction pattern MTJ.

[0037] According to an embodiment of the inventive concept, the first non-magnetic pattern 140 may include a first metal having an atomic mass greater than that of a metal element in the tunnel barrier pattern TBP. Therefore, the binding energy between the material in the first non-magnetic pattern 140 and the conductive etching residue may be greater than the binding energy between the material in the tunnel barrier pattern TBP and the conductive etching residue. Due to this difference in binding energy between the first non-magnetic pattern 140 and the tunnel barrier pattern TBP relative to the conductive etching residue, the conductive layer 180 may be formed on the side surface of the first non-magnetic pattern 140 and spaced apart from the side surface of the tunnel barrier pattern TBP. That is, the side surface or sidewall of the tunnel barrier pattern TBP may not have the conductive etching residue or the conductive layer 180 and may be separated therefrom. Since the conductive layer 180 is formed at a position spaced apart from the side surface of the tunnel barrier pattern TBP, an electrical short circuit problem between the magnetic patterns in the magnetic tunnel junction pattern MTJ may be prevented.

[0038] In addition, the second nonmagnetic pattern 160 may include a second metal having a larger atomic mass than the first metal in the first nonmagnetic pattern 140, and a thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be greater than a thickness 140T of the first nonmagnetic pattern 140 in the first direction D1. Because the thickness 140T of the first nonmagnetic pattern 140 is less than the thickness of the second nonmagnetic pattern 160, the binding energy between the material in the first nonmagnetic pattern 140 and the conductive etching residue may be greater than the binding energy between the material in the second nonmagnetic pattern 160 and the conductive etching residue. Therefore, the conductive layer 180 may be more easily formed on the side surface of the first nonmagnetic pattern 140 than on the side surface of the second nonmagnetic pattern 160 (in some embodiments, may be formed on the side surface of the first nonmagnetic pattern 140 in a larger amount), and as a result, it may reduce the parasitic resistance problem caused by the first nonmagnetic pattern 140.

[0039] Therefore, in the magnetic memory device according to the embodiment of the inventive concept, an electrical short problem between magnetic patterns in the magnetic tunnel junction pattern MTJ may be prevented, and a parasitic resistance problem in the magnetic tunnel junction pattern MTJ may be reduced.

[0040] The second interlayer insulating layer 190 may be disposed on the first interlayer insulating layer 110 to cover side surfaces of the bottom electrode BE, the magnetic tunnel junction pattern MTJ, and the top electrode TE. The second interlayer insulating layer 190 may be formed of or include at least one of silicon oxide, silicon nitride, and / or silicon oxynitride.

[0041] The upper interconnection line 200 may be disposed on the second interlayer insulating layer 190 and may be connected to the top electrode TE. The upper interconnection line 200 may extend in a second direction D2 parallel to the top surface 100U of the substrate 100. The upper interconnection line 200 may be electrically connected to the magnetic tunnel junction pattern MTJ through the top electrode TE and may be used as Figure 1 The upper interconnection line 200 may be formed of or include at least one of a metal material (eg, copper) or a conductive metal nitride material.

[0042] Figure 3 1 is a cross-sectional view showing a magnetic storage device according to an embodiment of the inventive concept. Figure 2 The elements in the magnetic memory device described are different elements.

[0043] Reference Figure 3 , the second non-magnetic pattern 160 may include a second metal, the atomic mass of which may be less than the atomic mass of the first metal of the first non-magnetic pattern 140. In the case where the first metal is tantalum (Ta), the second metal may be one of Mg, Al, Ti, or Ru. The second non-magnetic pattern 160 may be formed of at least one of an oxide or nitride material containing the second metal, or include at least one of them. In the case where the first non-magnetic pattern 140 includes tantalum oxide (TaO), the second non-magnetic pattern 160 may include at least one of a metal oxide material containing Mg, Al, Ti, Ru, or an alloy thereof, or a metal nitride material containing Mg, Al, Ti, Ru, or an alloy thereof. The second non-magnetic pattern 160 may further include boron (B). In some embodiments, the first non-magnetic pattern 140 may be formed of or include tantalum oxide (TaO), and the second non-magnetic pattern 160 may be formed of or include magnesium oxide (MgO) or magnesium boron oxide (MgBO).

[0044] In some embodiments, a thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be less than or equal to a thickness 140T of the first nonmagnetic pattern 140 in the first direction D1.

[0045] According to an embodiment of the inventive concept, the atomic mass of the first metal of the first nonmagnetic pattern 140 may be greater than the atomic mass of the metal element in the tunnel barrier pattern TBP, and may be greater than the atomic mass of the second metal of the second nonmagnetic pattern 160. Therefore, the binding energy between the material in the first nonmagnetic pattern 140 and the conductive etching residue may be greater than the binding energy between the material in the tunnel barrier pattern TBP and the conductive etching residue, and may be greater than the binding energy between the material in the second nonmagnetic pattern 160 and the conductive etching residue. Due to these differences in the binding energy between the first nonmagnetic pattern 140 and the tunnel barrier pattern TBP and between the first nonmagnetic pattern 140 and the second nonmagnetic pattern 160 with respect to the conductive etching residue, the conductive layer 180 may be more easily formed on the side surface of the first nonmagnetic pattern 140 and may be spaced apart from the side surface of the tunnel barrier pattern TBP, so that the side surface of the tunnel barrier pattern TBP is free of the conductive layer 180 and is separated therefrom. Since the conductive layer 180 is formed at a position spaced apart from the side surface of the tunnel barrier pattern TBP, an electrical short circuit problem between magnetic patterns in the magnetic tunnel junction pattern MTJ can be prevented. In addition, since the conductive layer 180 is more easily formed on the side surface of the first non-magnetic pattern 140, a parasitic resistance problem caused by the first non-magnetic pattern 140 can be reduced.

[0046] In addition, the second nonmagnetic pattern 160 may be formed to have a thickness 160T thinner than or equal to the first nonmagnetic pattern 140 , in which case a parasitic resistance problem caused by the second nonmagnetic pattern 160 may be reduced.

[0047] As a result, in the magnetic memory device according to the embodiment of the inventive concept, an electrical short problem between magnetic patterns in the magnetic tunnel junction pattern MTJ may be prevented, and a parasitic resistance problem in the magnetic tunnel junction pattern MTJ may be reduced.

[0048] Figure 4 1 is a cross-sectional view showing a magnetic storage device according to an embodiment of the inventive concept. Figure 2 The elements in the magnetic memory device described are different elements.

[0049] Reference Figure 4 , the free magnetic pattern FL may be disposed between the bottom electrode BE and the tunnel barrier pattern TBP, and the reference magnetic pattern PL may be disposed between the top electrode TE and the tunnel barrier pattern TBP. In this case, the top electrode TE may be referred to as a first electrode, and the bottom electrode BE may be referred to as a second electrode.

[0050] The reference magnetic pattern PL may include a first pinning pattern PL1, a second pinning pattern PL2 between the first pinning pattern PL1 and the tunnel barrier pattern TBP, and an exchange coupling pattern 130 between the first pinning pattern PL1 and the second pinning pattern PL2. The second pinning pattern PL2 may be antiferromagnetically coupled to the first pinning pattern PL1 through the exchange coupling pattern 130, and as a result, a magnetization direction MD2 of the second pinning pattern PL2 may be antiparallel to a magnetization direction MD1 of the first pinning pattern PL1.

[0051] The capping pattern 170 may be disposed between the top electrode TE and the reference magnetic pattern PL, and may serve to prevent degradation of the reference magnetic pattern PL.

[0052] The first nonmagnetic pattern 140 may be disposed between the free magnetic pattern FL and the bottom electrode BE, and the second nonmagnetic pattern 160 may be disposed between the first nonmagnetic pattern 140 and the bottom electrode BE. The metal pattern 150 may be disposed between the first nonmagnetic pattern 140 and the second nonmagnetic pattern 160.

[0053] The seed pattern 120 may be disposed between the second nonmagnetic pattern 160 and the bottom electrode BE. In some embodiments, at least a portion of the seed pattern 120 may have an amorphous phase, and the crystal structure of the bottom electrode BE may be prevented from propagating to layers disposed or formed on the seed pattern 120 (e.g., the first and second nonmagnetic patterns 140 and 160, the metal pattern 150, and the free magnetic pattern FL).

[0054] The conductive layer 180 may cover the side surface of the first nonmagnetic pattern 140 and may extend to the side surface of the metal pattern 150 and the area on the side surface of the second nonmagnetic pattern 160. The conductive layer 180 may be spaced apart from the side surface of the tunnel barrier pattern TBP such that the side surface of the tunnel barrier pattern TBP is free of the conductive layer 180 and is separated therefrom.

[0055] The magnetic memory device according to this embodiment can be used with reference to Figure 2 The magnetic memory devices described are substantially the same except for the locations of the above-mentioned layers.

[0056] Figure 5 1 is a cross-sectional view showing a magnetic storage device according to an embodiment of the inventive concept. Figure 2 The elements in the magnetic memory device described are different elements.

[0057] Reference Figure 5, the free magnetic pattern FL may be disposed between the bottom electrode BE and the tunnel barrier pattern TBP, and the reference magnetic pattern PL may be disposed between the top electrode TE and the tunnel barrier pattern TBP. In this case, the top electrode TE may be referred to as a first electrode, and the bottom electrode BE may be referred to as a second electrode.

[0058] The reference magnetic pattern PL may include a first pinning pattern PL1, a second pinning pattern PL2 between the first pinning pattern PL1 and the tunnel barrier pattern TBP, and an exchange coupling pattern 130 between the first pinning pattern PL1 and the second pinning pattern PL2. The second pinning pattern PL2 may be antiferromagnetically coupled to the first pinning pattern PL1 through the exchange coupling pattern 130, and as a result, a magnetization direction MD2 of the second pinning pattern PL2 may be antiparallel to a magnetization direction MD1 of the first pinning pattern PL1.

[0059] The capping pattern 170 may be disposed between the top electrode TE and the reference magnetic pattern PL, and may serve to prevent degradation of the reference magnetic pattern PL.

[0060] The first nonmagnetic pattern 140 may be disposed between the free magnetic pattern FL and the bottom electrode BE, and the second nonmagnetic pattern 160 may be disposed between the first nonmagnetic pattern 140 and the bottom electrode BE. The metal pattern 150 may be disposed between the first nonmagnetic pattern 140 and the second nonmagnetic pattern 160. In some embodiments, the second nonmagnetic pattern 160 may include a second metal, and the atomic mass of the second metal may be less than the atomic mass of the first metal of the first nonmagnetic pattern 140. The thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be less than or equal to the thickness 140T of the first nonmagnetic pattern 140 in the first direction D1. The first nonmagnetic pattern 140 and the second nonmagnetic pattern 160 may be provided to have the same thickness as the reference pattern 140. Figure 3 The first nonmagnetic pattern 140 and the second nonmagnetic pattern 160 are described to have substantially the same features.

[0061] The seed pattern 120 may be disposed between the second nonmagnetic pattern 160 and the bottom electrode BE. In some embodiments, at least a portion of the seed pattern 120 may have an amorphous phase, and the crystal structure of the bottom electrode BE may be prevented from propagating to layers disposed or formed on the seed pattern 120 (e.g., the first and second nonmagnetic patterns 140 and 160, the metal pattern 150, and the free magnetic pattern FL).

[0062] The conductive layer 180 may cover the side surface of the first nonmagnetic pattern 140, and may extend to regions on the side surfaces of the metal pattern 150 and the second nonmagnetic pattern 160. The conductive layer 180 may be spaced apart from the side surface of the tunnel barrier pattern TBP.

[0063] In addition to the above differences, the magnetic memory device according to the present embodiment can be compared with the reference Figure 2 The magnetic memory devices described are basically the same.

[0064] Figure 6 and Figure 7 2 is a cross-sectional view showing a method of manufacturing a magnetic memory device according to an embodiment of the inventive concept. Figures 2 to 5 Elements that are the same as those in the described magnetic memory device may be identified by the same reference numerals without repeating overlapping descriptions.

[0065] Reference Figure 6 , a first interlayer insulating layer 110 may be formed on the substrate 100, and a lower contact plug 115 may be formed in the first interlayer insulating layer 110. The lower contact plug 115 may be formed to penetrate the first interlayer insulating layer 110 and may be electrically connected to a selection element (e.g., Figure 1 One of the terminals (e.g., source / drain terminals) of SE).

[0066] A bottom electrode layer BEL, a seed layer 120L, a reference magnetic layer PLa, a tunnel barrier layer TBL, a free magnetic layer FLa, a first non-magnetic layer 140L, a metal layer 150L, ​​a second non-magnetic layer 160L, and a capping layer 170L may be sequentially stacked on the first interlayer insulating layer 110. The reference magnetic layer PLa may include a first pinned layer PLa1, an exchange coupling layer 130L, and a second pinned layer PLa2 sequentially stacked on the seed layer 120L. The structure including the seed layer 120L, the reference magnetic layer PLa, the tunnel barrier layer TBL, the free magnetic layer FLa, the first non-magnetic layer 140L, the metal layer 150L, ​​the second non-magnetic layer 160L, and the capping layer 170L may be referred to as a magnetic tunnel junction layer MTJL.

[0067] The tunnel barrier layer TBL may include a metal oxide material. The first non-magnetic layer 140L may include a first metal, the atomic mass of the first metal being greater than the atomic mass of the metal element in the tunnel barrier layer TBL. The first non-magnetic layer 140L may be formed of or include at least one of an oxide or nitride material containing the first metal, and may further include boron. The second non-magnetic layer 160L may be formed of or include a second metal different from the first metal. The second non-magnetic layer 160L may be formed of or include at least one of an oxide or nitride material containing the second metal, and may further include boron. In some embodiments, the atomic mass of the second metal may be greater than the atomic mass of the first metal. In this case, the thickness 160T of the second non-magnetic layer 160L in the first direction D1 may be greater than the thickness 140T of the first non-magnetic layer 140L in the first direction D1. In other embodiments, as described with reference to Figure 3 As described above, the atomic mass of the second metal may be smaller than the atomic mass of the first metal of the first nonmagnetic pattern 140. In this case, the thickness 160T of the second nonmagnetic layer 160L in the first direction D1 may be smaller than or equal to the thickness 140T of the first nonmagnetic layer 140L in the first direction D1.

[0068] The metal layer 150L may include at least one of a non-magnetic metal element or a ferromagnetic element, and may further include boron. In an embodiment, the metal layer 150L may be formed to have arrive The metal layer 150L may be interposed between the first non-magnetic layer 140L and the second non-magnetic layer 160L to separate the first non-magnetic layer 140L from the second non-magnetic layer 160L.

[0069] The bottom electrode layer BEL, the seed layer 120L, the reference magnetic layer PLa, the tunnel barrier layer TBL, the free magnetic layer FLa, the first non-magnetic layer 140L, the metal layer 150L, ​​the second non-magnetic layer 160L and the capping layer 170L may be formed by chemical vapor deposition or physical vapor deposition (e.g., sputtering deposition).

[0070] A conductive mask pattern CP may be formed on the capping layer 170L to define a region for a magnetic tunnel junction pattern (which will be described below). The conductive mask pattern CP may be formed of or include at least one of a metal material (e.g., Ta, W, Ru, and Ir) or a conductive metal nitride material (e.g., TiN).

[0071] Reference Figure 7, the magnetic tunnel junction layer MTJL and the bottom electrode layer BEL may be sequentially etched by an etching process using the conductive mask pattern CP as an etching mask. In an embodiment, the etching process may be an ion beam etching process. The magnetic tunnel junction pattern MTJ and the bottom electrode BE may be formed by etching the magnetic tunnel junction layer MTJL and the bottom electrode layer BEL, respectively.

[0072] The magnetic tunnel junction pattern MTJ may include a seed pattern 120, a reference magnetic pattern PL, a tunnel barrier pattern TBP, a free magnetic pattern FL, a first non-magnetic pattern 140, a metal pattern 150, a second non-magnetic pattern 160, and a capping pattern 170, which are formed by etching a seed layer 120L, a reference magnetic layer PLa, a tunnel barrier layer TBL, a free magnetic layer FLa, a first non-magnetic layer 140L, a metal layer 150L, ​​a second non-magnetic layer 160L, and a capping layer 170L. The reference magnetic pattern PL may include a first pinning pattern PL1, an exchange coupling pattern 130, and a second pinning pattern PL2, which are formed by etching a first pinning layer PLa1, an exchange coupling layer 130L, and a second pinning layer PLa2, respectively.

[0073] After the etching process, a remaining portion of the conductive mask pattern CP may remain on the magnetic tunnel junction pattern MTJ. The remaining portion of the conductive mask pattern CP may be referred to as a top electrode TE.

[0074] During the etching process, conductive etching residues may be generated and may be redeposited on the side surface of the magnetic tunnel junction pattern MTJ. According to an embodiment of the inventive concept, the first non-magnetic pattern 140 may include a first metal having an atomic mass greater than that of a metal element in the tunnel barrier pattern TBP. Therefore, the binding energy between the material in the first non-magnetic pattern 140 and the conductive etching residues may be greater than the binding energy between the material in the tunnel barrier pattern TBP and the conductive etching residues. Due to the difference in binding energy between the first non-magnetic pattern 140 and the tunnel barrier pattern TBP relative to the conductive etching residues, the conductive layer 180 may be preferentially formed on the side surface of the first non-magnetic pattern 140 and at a position spaced apart from the side surface of the tunnel barrier pattern TBP. As such, the side surface or sidewall of the tunnel barrier pattern TBP may be free of conductive etching residues or the conductive layer 180 and may be separated therefrom.

[0075] In some embodiments, the second nonmagnetic pattern 160 may include a second metal having a greater atomic mass than the first metal in the first nonmagnetic pattern 140, and a thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be greater than a thickness 140T of the first nonmagnetic pattern 140 in the first direction D1. Because the thickness 140T of the first nonmagnetic pattern 140 is less than the thickness of the second nonmagnetic pattern 160, the binding energy between the material in the first nonmagnetic pattern 140 and the conductive etching residue may be greater than the binding energy between the material in the second nonmagnetic pattern 160 and the conductive etching residue. Therefore, the conductive layer 180 may be more easily formed on the side surface of the first nonmagnetic pattern 140 than on the side surface of the second nonmagnetic pattern 160.

[0076] In other embodiments, the second nonmagnetic pattern 160 may include a second metal having a smaller atomic mass than the first metal in the first nonmagnetic pattern 140, and a thickness 160T of the second nonmagnetic pattern 160 in the first direction D1 may be less than or equal to a thickness 140T of the first nonmagnetic pattern 140 in the first direction D1. Here, the atomic mass of the first metal of the first nonmagnetic pattern 140 may be greater than the atomic mass of the second metal of the second nonmagnetic pattern 160, in which case the binding energy between the material in the first nonmagnetic pattern 140 and the conductive etching residue may be greater than the binding energy between the material in the second nonmagnetic pattern 160 and the conductive etching residue. Due to this difference in binding energy between the first nonmagnetic pattern 140 and the second nonmagnetic pattern 160 with respect to the conductive etching residue, the conductive layer 180 may be more easily formed on the side surface of the first nonmagnetic pattern 140 than on the side surface of the second nonmagnetic pattern 160. In the case where the thickness 160T of the second nonmagnetic pattern 160 is less than or equal to the thickness of the first nonmagnetic pattern 140, a parasitic resistance problem caused by the second nonmagnetic pattern 160 may be reduced.

[0077] Refer again Figure 2 , a second interlayer insulating layer 190 may be formed on the first interlayer insulating layer 110 to cover side surfaces of the bottom electrode BE, the magnetic tunnel junction pattern MTJ, and the top electrode TE. An upper interconnection line 200 may be formed on the second interlayer insulating layer 190 and may be connected to the top electrode TE. The upper interconnection line 200 may be a linear pattern extending in the second direction D2.

[0078] Reference Figures 3 to 5 The magnetic memory device can be formed by the same method as the above-mentioned manufacturing method.

[0079] Figure 8 is a plan view showing a magnetic memory device according to an embodiment of the inventive concept, Fig. 9 is along Figure 8For simplicity, the cross-sectional view is taken along the line II' of FIG. Figures 2 to 5 Elements that are the same as those in the described magnetic memory device may be identified by the same reference numerals without repeating overlapping descriptions.

[0080] Reference Figure 8 and Fig. 9 , the interconnection lines 102 and the interconnection contacts 104 may be disposed on the substrate 100. The interconnection lines 102 may be spaced apart from the top surface 100U of the substrate 100 in a first direction D1 perpendicular to the top surface 100U of the substrate 100. The interconnection contacts 104 may be disposed between the interconnection lines 102 and between the lowermost interconnection line among the interconnection lines 102 and the substrate 100. Each interconnection line 102 may be electrically connected to the substrate 100 through a corresponding interconnection contact among the interconnection contacts 104. The interconnection lines 102 and the interconnection contacts 104 may be formed of or include at least one metal material (e.g., copper).

[0081] Select the component (e.g. Figure 1 The SE in the substrate 100 may be disposed in the substrate 100. In an embodiment, the selection element may be a field effect transistor. Each interconnect line 102 may be electrically connected to one of the terminals (e.g., source / drain terminals) of a corresponding selection element in the selection element through a corresponding interconnect contact in the interconnect contact 104.

[0082] The interconnection insulating layer 106 may be disposed on the substrate 100 to cover the interconnection lines 102 and the interconnection contacts 104. The interconnection insulating layer 106 may be formed to expose the top surface of the uppermost interconnection line among the interconnection lines 102. The top surface of the uppermost interconnection line 102 may be coplanar with the top surface of the interconnection insulating layer 106. The top surface of the uppermost interconnection line 102 may be located at substantially the same height as the top surface of the interconnection insulating layer 106. In this specification, the term "height" may mean a distance measured from the top surface 100U of the substrate 100 in the first direction D1. In an embodiment, the interconnection insulating layer 106 may be formed of, or include, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0083] The first interlayer insulating layer 110 may be disposed on the interconnection insulating layer 106 to cover a top surface of the uppermost interconnection line 102 .

[0084] A plurality of lower contact plugs 115 may be disposed in the first interlayer insulating layer 110. The lower contact plugs 115 may be spaced apart from each other in a second direction D2 and a third direction D3 parallel to the top surface 100U of the substrate 100. The second direction D2 and the third direction D3 may not be parallel to each other. Each lower contact plug 115 may be provided to penetrate the first interlayer insulating layer 110 and may be connected to a corresponding interconnection line in the uppermost interconnection line 102. The lower contact plug 115 may be formed of at least one of a doped semiconductor material (e.g., doped silicon), a metal material (e.g., tungsten, titanium, and / or tantalum), a metal-semiconductor compound (e.g., a metal silicide), or a conductive metal nitride (e.g., titanium nitride, tantalum nitride, and / or tungsten nitride), or include at least one of them.

[0085] A plurality of data storage patterns DS may be disposed on the first interlayer insulating layer 110 and may be spaced apart from each other in the second direction D2 and the third direction D3. The data storage patterns DS may be disposed on and connected to the lower contact plugs 115, respectively.

[0086] Each data storage pattern DS may include a bottom electrode BE, a magnetic tunnel junction pattern MTJ, and a top electrode TE sequentially stacked on a corresponding lower contact plug among the lower contact plugs 115. The bottom electrode BE may be disposed between the corresponding lower contact plug 115 and the magnetic tunnel junction pattern MTJ, and the magnetic tunnel junction pattern MTJ may be disposed between the bottom electrode BE and the top electrode TE. The magnetic tunnel junction pattern MTJ may be configured to have a shape similar to the reference Figures 2 to 5 The magnetic tunnel junction pattern described has the same features as the MTJ.

[0087] The top surface of the first interlayer insulating layer 110 between the data storage patterns DS may be recessed toward the substrate 100. A protective insulating layer 195 may be provided to cover and surround the side surface of each data storage pattern DS. When viewed in a plan view, the protective insulating layer 195 may cover the side surfaces of the bottom electrode BE, the magnetic tunnel junction pattern MTJ, and the top electrode TE, and may surround the side surfaces of the bottom electrode BE, the magnetic tunnel junction pattern MTJ, and the top electrode TE. The protective insulating layer 195 may cover the conductive layer 180 on the side surface of the magnetic tunnel junction pattern MTJ. The conductive layer 180 may be interposed between the side surface of the magnetic tunnel junction pattern MTJ and the protective insulating layer 195.

[0088] The protective insulating layer 195 may extend from the side surface of each data storage pattern DS to a region on the recessed top surface 110RU of the first interlayer insulating layer 110. The protective insulating layer 195 may conformally extend along the recessed top surface 110RU of the first interlayer insulating layer 110. The protective insulating layer 195 may be formed of or include at least one of nitride materials (e.g., silicon nitride).

[0089] The second interlayer insulating layer 190 may be disposed on the first interlayer insulating layer 110 to cover the data storage pattern DS. The protective insulating layer 195 may be interposed between the side surface of each data storage pattern DS and the second interlayer insulating layer 190, and may extend to a region between the recessed top surface 110RU of the first interlayer insulating layer 110 and the second interlayer insulating layer 190.

[0090] A plurality of upper interconnection lines 200 may be disposed on the second interlayer insulating layer 190. The upper interconnection lines 200 may extend in the second direction D2 and may be spaced apart from each other in the third direction D3. Each upper interconnection line 200 may be (e.g., electrically) connected to a data storage pattern among the data storage patterns DS spaced apart from each other in the second direction D2.

[0091] According to an embodiment of the inventive concept, the first non-magnetic pattern can be provided to have a greater binding energy for a conductive etching residue than a tunnel barrier pattern, which can be generated during an etching process for forming a magnetic tunnel junction pattern. Therefore, the conductive layer can be preferentially formed on the side surface of the first non-magnetic pattern and spaced apart from the side surface of the tunnel barrier pattern, so that the side surface of the tunnel barrier pattern is free of conductive etching residues or layers and is separated therefrom. Since the conductive layer is formed on the side surface of the first non-magnetic pattern, the parasitic resistance problem caused by the first non-magnetic pattern can be reduced. In addition, since the conductive layer is formed at a position spaced apart from the side surface of the tunnel barrier pattern, the electrical short circuit problem between the magnetic patterns in the magnetic tunnel junction pattern can be prevented.

[0092] Therefore, a magnetic memory device having improved electrical characteristics and reliability characteristics and a method of manufacturing the same may be provided.

[0093] While example embodiments of the inventive concepts have been particularly shown and described, it will be understood by those skilled in the art that changes in form and details may be made therein without departing from the scope of the appended claims.

[0094] CROSS-REFERENCE TO RELATED APPLICATIONS

[0095] This patent application claims the priority of Korean Patent Application No. 10-2023-0087695 filed in the Korean Intellectual Property Office on July 6, 2023, the entire contents of which are incorporated herein by reference.

Claims

1. A magnetic storage device, comprising: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; a first non-magnetic pattern on the free magnetic pattern, wherein the free magnetic pattern is between the tunnel barrier pattern and the first non-magnetic pattern; a second non-magnetic pattern on the first non-magnetic pattern, wherein the first non-magnetic pattern is between the free magnetic pattern and the second non-magnetic pattern; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern; as well as A conductive layer is provided on a side surface of the first nonmagnetic pattern.

2. The magnetic memory device according to claim 1, wherein the first nonmagnetic pattern comprises an oxide material of a first metal or a nitride material of the first metal, and An atomic mass of the first metal is greater than or equal to an atomic mass of a metal element in the tunnel barrier pattern.

3. The magnetic memory device according to claim 2, wherein the second nonmagnetic pattern comprises an oxide material of a second metal or a nitride material of the second metal, and The second metal is different from the first metal.

4. The magnetic memory device according to claim 3, wherein: The atomic mass of the second metal is greater than the atomic mass of the first metal.

5. The magnetic memory device according to claim 4, wherein: A thickness of the second nonmagnetic pattern in a first direction perpendicular to a top surface of the substrate is greater than a thickness of the first nonmagnetic pattern in the first direction.

6. The magnetic memory device according to claim 3, wherein: The atomic mass of the second metal is less than the atomic mass of the first metal.

7. The magnetic memory device according to claim 6, wherein: A thickness of the second nonmagnetic pattern in a first direction perpendicular to a top surface of the substrate is less than or equal to a thickness of the first nonmagnetic pattern in the first direction.

8. The magnetic memory device according to claim 1, wherein: The metal pattern includes a non-magnetic metal element, a ferromagnetic element, or an alloy including at least one of the non-magnetic metal element or the ferromagnetic element.

9. The magnetic memory device according to claim 1, further comprising: a first electrode spaced apart from the tunnel barrier pattern, with the reference magnetic pattern located therebetween; as well as a second electrode spaced apart from the tunnel barrier pattern with the free magnetic pattern located therebetween, wherein the first non-magnetic pattern, the second non-magnetic pattern and the metal pattern are between the free magnetic pattern and the second electrode, and The conductive layer includes a same material as at least one of the first electrode or the second electrode. 10 . The magnetic memory device of claim 1 , wherein the conductive layer extends from the side surface of the first nonmagnetic pattern to a region on a side surface of the metal pattern, wherein a side surface of the tunnel barrier pattern is free of the conductive layer. 11 . The magnetic memory device of claim 10 , wherein the conductive layer further extends to a region on a side surface of the second nonmagnetic pattern.

12. A magnetic storage device comprising: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; an electrode spaced apart from the tunnel barrier pattern and with the free magnetic pattern located therebetween; a first non-magnetic pattern between the free magnetic pattern and the electrode, the first non-magnetic pattern comprising a first metal; a second nonmagnetic pattern between the first nonmagnetic pattern and the electrode, the second nonmagnetic pattern comprising a second metal; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern; and a conductive layer on a side surface of the first nonmagnetic pattern, wherein the atomic mass of the first metal is greater than or equal to the atomic mass of the metal element in the tunnel barrier pattern, and The conductive layer is spaced apart from side surfaces of the tunnel barrier pattern. 13 . The magnetic memory device of claim 12 , wherein the first nonmagnetic pattern comprises an oxide material of the first metal or a nitride material of the first metal, and wherein the second nonmagnetic pattern comprises an oxide material of the second metal or a nitride material of the second metal. The magnetic memory device of claim 13 , wherein the second metal is different from the first metal.

15. The magnetic memory device according to claim 13, wherein: The atomic mass of the second metal is greater than the atomic mass of the first metal.

16. The magnetic memory device according to claim 15, wherein: A thickness of the second nonmagnetic pattern in a first direction perpendicular to a top surface of the substrate is greater than a thickness of the first nonmagnetic pattern in the first direction.

17. The magnetic memory device according to claim 13, wherein: The atomic mass of the second metal is less than the atomic mass of the first metal.

18. The magnetic memory device according to claim 12, wherein: The conductive layer contacts the side surface of the first nonmagnetic pattern.

19. The magnetic memory device according to claim 12, wherein: The metal pattern includes a non-magnetic metal element, a ferromagnetic element, or an alloy including at least one of the non-magnetic metal element or the ferromagnetic element, and The conductive layer extends from the side surface of the first nonmagnetic pattern to a region on the side surface of the metal pattern.

20. A magnetic storage device comprising: a reference magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; an electrode spaced apart from the tunnel barrier pattern with one of the free magnetic pattern or the reference magnetic pattern located therebetween; a first non-magnetic pattern between the free magnetic pattern and the electrode; a second non-magnetic pattern between the first non-magnetic pattern and the electrode; a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, The first non-magnetic pattern includes a first metal, and compared with the second metal of the tunnel barrier pattern, the first metal has a greater binding energy to the conductive material of the electrode.

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