Exposure control method and exposure system

Abstract

The invention discloses an exposure control method and an exposure system.The exposure control method comprises the following steps that training exposure parameters are obtained; forming an exposure strategy according to the training exposure parameters; acquiring actual exposure parameters; matching an exposure strategy according to the actual exposure parameters; and exposing the mask according to the matched exposure strategy. When the parameters of the second mask are changed, manual debugging is not needed, the exposure strategy can be directly replaced, and continuous exposure is carried out on the second masks with different parameter models.

Description

Technical Field

[0001] The invention relates to the field of mask exposure, and in particular to an exposure control method and an exposure system. Background Art

[0002] A mask is applied on the cell, a partial mask is exposed, and the exposed area or non-exposed area on the mask is developed to obtain a mask opening (also called a grid line pattern), the purpose of which is to prepare for the subsequent electroplating of metal in the mask opening. The exposure equipment is used to expose the partial mask. The size of the mask (the mask is applied on the cell, and the size of the mask is generally determined by the size of the cell) is different, resulting in changes in exposure parameters. The existing exposure equipment can only complete the exposure operation of a few sizes of masks, and manual debugging is required before each change. In addition, even for masks of the same size, there are processing errors in the thickness of the cell and the thickness of the mask, resulting in different exposure distances for different masks, which in turn affects the accuracy of exposure. Furthermore, the irradiation intensity of the exposure equipment will continue to decay with the increase in the number of exposures, which will also affect the accuracy of exposure. Summary of the invention

[0003] In order to solve one of the technical problems raised in the background technology, the technical solution proposed in this application is as follows.

[0004] In one aspect, an embodiment of the present application provides an exposure control method, comprising the following steps:

[0005] Get training exposure parameters;

[0006] forming an exposure strategy based on the training exposure parameters;

[0007] Get actual exposure parameters;

[0008] Match the exposure strategy according to the actual exposure parameters;

[0009] The mask is exposed according to the matched exposure strategy.

[0010] In some implementations, obtaining the training exposure parameters includes:

[0011] Obtaining the thickness h of the first mask;

[0012] Calculate / obtain the first exposure attenuation percentage α when the first exposure sequence number is n;

[0013] The forming of the exposure strategy according to the training exposure parameters comprises:

[0014] When the thickness h of the first mask and the first exposure sequence number n are fixed values, at least one parameter value among the first exposure distance s, the first irradiation intensity q and the first exposure time t is changed, and the first exposure attenuation percentage α corresponding to the first exposure sequence number n is compensated until the expected exposure effect is obtained;

[0015] On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure number n, the first exposure attenuation percentage α corresponding to the first exposure number n, the first exposure distance s, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy;

[0016] The value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy;

[0017] The obtaining of the actual exposure parameters includes obtaining the thickness h of the second mask. 2 , the second exposure number n 2 ;

[0018] The matching of the exposure strategy according to the actual exposure parameters includes:

[0019] Select and the thickness of the second mask h 2 , the second exposure number n 2 , respectively adapted first mask thickness h, first exposure sequence number n; according to the adapted first mask thickness h, first exposure sequence number n, select the first exposure attenuation percentage α, the first exposure distance s, the first irradiation intensity q and the first exposure time t;

[0020] Exposing the mask according to the matched exposure strategy includes:

[0021] The second mask is exposed according to the selected first exposure distance s, the first irradiation intensity q and the first exposure time t, and the second exposure sequence number n is 2 The first exposure attenuation percentage α corresponding to the time is compensated.

[0022] In some implementations, obtaining the training exposure parameters includes:

[0023] Obtaining a thickness h of a first mask and a first exposure distance s;

[0024] Calculate / obtain the first exposure attenuation percentage α when the first exposure sequence number is n;

[0025] The forming of the exposure strategy according to the training exposure parameters comprises:

[0026] When the thickness h of the first mask and the first exposure distance s are fixed values, at least one parameter value of the first irradiation intensity q and the first exposure duration t is changed, and the first exposure attenuation percentage α corresponding to the first exposure sequence number n is compensated until the expected exposure effect is obtained;

[0027] On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure distance s, the first exposure number n, the first exposure attenuation percentage α corresponding to the first exposure number n, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy;

[0028] The first exposure distance s is a fixed value, the value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy;

[0029] The obtaining of the actual exposure parameters includes obtaining the thickness h of the second mask. 2 , the second exposure distance s 2 , the second exposure number n 2 ;

[0030] The matching of the exposure strategy according to the actual exposure parameters includes:

[0031] Select and the thickness of the second mask h 2 , the second exposure distance s 2 , the second exposure number n 2 The thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n are respectively adapted; the first exposure attenuation percentage α, the first irradiation intensity q, and the first exposure time t are selected according to the thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n;

[0032] Exposing the mask according to the matched exposure strategy includes:

[0033] The second mask is exposed according to the selected first irradiation intensity q and the first exposure time t, and the second exposure sequence number is n. 2 The first exposure attenuation percentage α corresponding to the time is compensated.

[0034] In some embodiments, the obtaining of the training exposure parameters further comprises: obtaining a thickness of the first cell sheet including the mask as d;

[0035] The obtaining of the actual exposure parameters further includes: measuring the thickness of the second cell sheet including the mask as d 1 ;

[0036] When d>d 1, control at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range;

[0037] When 1 >d, control at least one of the second exposure device and the exposure platform to move away from each other, so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range.

[0038] In some embodiments, the obtaining of the training exposure parameters further comprises: obtaining a thickness of the first cell sheet including the mask as d;

[0039] The obtaining of the actual exposure parameters further includes: measuring the thickness of the second cell sheet including the mask as d 1 ;

[0040] if|dd 1 |≤d 0 ,The distance between the second exposure device and the exposure platform remains unchanged;

[0041] if|dd 1 |>d 0 ,

[0042] When d>d 1 , control at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range;

[0043] When 1 >d, control at least one of the second exposure device and the exposure platform to move away from each other, so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range.

[0044] In some embodiments, when the thickness of the second mask h 2 , the second exposure distance s 2 is the default value;

[0045] The first exposure number n is the upper limit of the setting range. 2 The first exposure number n is within the setting range of the upper limit value, and the second exposure number n 2 Adapting a first exposure attenuation percentage α corresponding to a first exposure sequence number n;

[0046] For the second exposure number n 2The compensation for the first exposure attenuation percentage α corresponding to the time includes:

[0047] When the value of the first irradiance intensity q decays to q(1-α);

[0048] The value of the first exposure time t is increased to t / (1-α).

[0049] In some embodiments, when h>h 2 , control at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range;

[0050] When h 2 > h, control at least one of the second exposure device and the exposure platform to move away from each other, so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range.

[0051] In some embodiments, when the exposure device is a projection exposure structure, the first exposure distance s and the second exposure distance s 2 are the distances from the optimal focal plane of the mask projection to the exposure surface of the cell; when the exposure device is a proximity exposure structure, the first exposure distance s and the second exposure distance s 2 They are all the distances from the mask to the exposure surface of the cell.

[0052] In some embodiments, when the thickness of the second mask h 2 is the preset value, the second exposure distance s 2 is the first fixed value, and the exposure strategy cannot be matched; the second exposure distance s 2 After changing to the second fixed value, the exposure strategy is matched.

[0053] In some embodiments, when the thickness of the second mask h 2 If the difference or comparison result of the thickness h of the first mask and any fixed value thereof is within the first threshold range, the two are successfully adapted;

[0054] When the second exposure distance s 2 If the result of the difference or comparison with any fixed value of the first exposure distance s is within the second threshold range, the two are successfully adapted;

[0055] When the second exposure number n 2 If the result of the difference or comparison with any fixed value of the first exposure sequence number n is within the third threshold range, the adaptation of the two is successful.

[0056] In some embodiments, within the same exposure energy and the same exposure distance variation range, a smaller mask line width forms more exposure strategies than a larger mask line width.

[0057] In some embodiments, within the same exposure distance variation range, high exposure energy forms more exposure strategies relative to low exposure energy.

[0058] On the other hand, an embodiment of the present invention further provides an exposure system, including a control device, wherein the control device includes:

[0059] A training parameter acquisition module is used to obtain training exposure parameters;

[0060] Exposure strategy module, which can form exposure strategy according to training exposure parameters;

[0061] An actual parameter acquisition module is used to obtain actual exposure parameters;

[0062] Exposure strategy matching module, which can match exposure strategy according to actual exposure parameters;

[0063] The exposure control module controls the exposure device to perform corresponding actions according to the matched exposure strategy.

[0064] On the other hand, an embodiment of the present invention further provides an exposure system, including a controller and an exposure device, wherein the controller is capable of executing any of the exposure control methods described above to control the exposure device to perform exposure.

[0065] In the embodiment of the present application, an exposure strategy library is pre-established through the first mask, and when the second mask is exposed, the parameters of the second mask and the parameters of the exposure device are obtained, and the parameters of the second mask and the parameters of the exposure device are matched with the parameters of the first mask and the parameters of the exposure device in the exposure strategy library, respectively, and then the matched exposure strategy is called to expose the second mask. When the parameters of the second mask change, such as when the production model is changed, it is not necessary to use manual debugging, and the exposure strategy can be directly replaced to continuously expose the second mask with different parameter models. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Attached Figure 1 is a flow chart of an exposure control method applicable to some embodiments of the present invention;

[0067] Attached Figure 2 is a flowchart of a specific exposure control method in Embodiment 1 of the present invention;

[0068] Attached Figure 3 is a flowchart of a specific exposure control method in Embodiment 2 of the present invention;

[0069] Attached Figure 4 is the relationship between the exposure distance and the line width of the grid line pattern under the same exposure energy;

[0070] Attached Figure 5 This is the relationship between exposure distance and grid difference under the same mask line width. DETAILED DESCRIPTION

[0071] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. Embodiment 1 is not just one embodiment, but a collection of embodiments with similar schemes or features, and the same is true for other embodiments.

[0072] Example 1

[0073] An exposure control method comprises the following steps: obtaining training exposure parameters; forming an exposure strategy according to the training exposure parameters; obtaining actual exposure parameters; matching the exposure strategy according to the actual exposure parameters; and exposing a mask according to the matched exposure strategy.

[0074] The method for obtaining the training exposure parameters includes: obtaining the thickness h of the first mask; calculating / obtaining the first exposure attenuation percentage α when the first exposure sequence number is n. For example, the value of the thickness h of the first mask is 20 μm, the exposure attenuation of the exposure light source is 10,000 times / 1%, and the first exposure attenuation percentage α corresponding to the 30,056th time is 3%. For example, if the exposure attenuation of the exposure light source is less than 50,000 times / 1%, it can be determined that the exposure attenuation of the exposure light source is small, and the first exposure attenuation percentage may not be obtained, and the influence of the exposure attenuation on the exposure result may be ignored.

[0075] The method for forming an exposure strategy according to training exposure parameters includes: when the thickness h of the first mask and the first exposure sequence number n are fixed values, at least one parameter value among the first exposure distance s, the first irradiation intensity q and the first exposure duration t is changed, and the first exposure attenuation percentage α corresponding to the first exposure sequence number n is compensated (when the exposure attenuation of the exposure light source is small, no supplementation is required) is performed until the expected exposure effect is obtained. On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure sequence number n, the first exposure attenuation percentage α corresponding to the first exposure sequence number n, the first exposure distance s, the first irradiation intensity q and the first exposure duration t constitutes an exposure strategy; the value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy. For example, when the value of the thickness h of the first mask is 20 μm, the exposure attenuation of the exposure light source is 10000 times / 1%, and the first exposure attenuation percentage α corresponding to the 30056th exposure is 3%, the following exposure parameters can be used to obtain the expected exposure effect: the value of the first exposure distance s is 45 μm, and the first irradiation intensity q is 90 mW / cm 2 (theoretical irradiation intensity, actual attenuation is 3%), the value of the first exposure time t is 0.5s, and the first exposure energy can also be considered to be 45mJ / cm 2 , the first irradiation intensity q or the first exposure time t or the first exposure energy is compensated by 3%. Then, the value of the thickness h of the first mask is 20μm, the exposure attenuation of the exposure light source is 10000 times / 1%, the first exposure attenuation percentage corresponding to the 30056th time is α, which is 3%, the value of the first exposure distance s is 45μm, and the first irradiation intensity q is 90mW / cm 2 , the value of the first exposure duration t is 0.5s. The set of these parameter values ​​constitutes an exposure strategy. To better illustrate the exposure strategy, several possible exposure strategies are listed in Table 1.

[0076] Table 1 Exposure strategies

[0077] project h n α s q t Strategy 1 20 30056 3％ 20 90 0.5 Strategy 2 20 35000 4％ 20 90 0.5 Strategy 3 20 39005 4％ 20 90 0.5 Strategy 4 30 39005 4％ 30 90 0.9 Strategy 5 30 90678 9％ 30 90 0.9 Strategy 6 30 100115 10％ 30 90 0.9

[0078] In Table 1, h represents the thickness of the second mask, in micrometers (μm). n represents the first exposure sequence, in times. α represents the first exposure attenuation percentage. s represents the first exposure distance, in micrometers (μm). q represents the first irradiation intensity, in milliwatts / square centimeter (mW / cm 2 ). t represents the first exposure duration, in seconds (s).

[0079] The method for obtaining the actual exposure parameters includes obtaining the thickness h of the second mask. 2 , the second exposure number n 2For example, the thickness of the second mask h 2 The value is 30μm, the second exposure number n 2 The value is 94580.

[0080] The method for matching the exposure strategy according to the actual exposure parameters includes: selecting and the thickness h of the second mask 2 , the second exposure number n 2 , respectively adapted first mask thickness h, first exposure sequence number n; according to the adapted first mask thickness h, first exposure sequence number n, select the first exposure attenuation percentage α, the first exposure distance s, the first irradiation intensity q and the first exposure time t. For example, when the second mask thickness h 2 The value is 30μm, the second exposure number n 2 The value of is 94580, the value of the thickness h of the first mask that can be matched is 30μm, the value of the first exposure sequence number n is 90678, the value of the first exposure sequence number n is 90678 and the value of the second exposure sequence number n is 2 The value of is 94580, which belongs to the interval [85000,94999]. The value of the first exposure attenuation percentage α is 9%, and then the strategy 5 in Table 1 is selected, that is, the value of the first exposure attenuation percentage α is 9%, the value of the first exposure distance s is 30μm, and the value of the first irradiation intensity q is 90mW / cm 2 (Theoretical irradiation intensity actually has a 3% attenuation), and the value of the first exposure time t is 0.9 s.

[0081] It should be noted that [85000,94999] is a closed interval in mathematics, representing integers in the numerical range of 85000-94999 and including the two endpoints of 85000 and 94999. Similar expressions in the following text have the same meaning as here and will not be explained further.

[0082] The method for exposing the mask according to the matched exposure strategy includes: exposing the second mask according to the selected first exposure distance s, the first irradiation intensity q and the first exposure time t, and for the second exposure sequence number n 2 For example, if the matched exposure strategy is strategy 5, then the second mask is exposed according to the parameter set of strategy 5.

[0083] In this embodiment, an exposure strategy library is pre-established by using the first mask, and when the second mask is exposed, the parameters of the second mask (the thickness of the second mask h 2 ) and the parameters of the exposure equipment (second exposure number n 2), the parameters of the second mask and the exposure device are matched with the parameters of the first mask and the exposure device in the exposure strategy library, and then the matched exposure strategy is called to expose the second mask. When the parameters of the second mask change, for example, when the production is changed, it is not necessary to use manual debugging, and the exposure strategy can be directly replaced to continuously expose the second mask with different parameter models.

[0084] In other embodiments, if the attenuation of the exposure device is small, the parameters of the exposure device (the first exposure number n, the first exposure attenuation percentage α, and the relationship between the two) may not be included in the exposure strategy library.

[0085] In a specific embodiment, the thickness of the first cell sheet (referred to as the first film-covered cell sheet) including the first mask is obtained as d; the thickness of the second cell sheet (referred to as the second film-covered cell sheet) including the second mask is measured as d 1 When d>d 1 , control at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 is the same fixed value or a fixed value within the same threshold range, for example, controlling the second exposure device to move toward the exposure platform 1 When d 1 >d, control at least one of the second exposure device and the exposure platform to move away from each other, so that the first exposure distance s and the second exposure distance s 2 is the same fixed value or a fixed value within the same threshold range, for example, controlling the second exposure device to move away from the exposure platform. 1 -d. For example, when other exposure parameters are appropriate, the value of the thickness d of the first film-coated cell is 200μm, and the value of the first exposure distance s is 45μm, and the expected exposure effect is obtained. In actual production, there is an error between the thickness of the second mask and the thickness of the first mask. For example, when the second mask is 2μm thinner than the first mask, d>d 1 , it is necessary to control at least one of the second exposure device and the exposure platform to move in a direction close to each other, which can be the second exposure device and the exposure platform both move, or one of the second exposure device and the exposure platform moves, and the sum of the distance moved by the second exposure device and the distance moved by the exposure platform is 2μm. When the second mask is 2μm thicker than the first mask, d 1>d, control at least one of the second exposure device and the exposure platform to move away from each other by a distance of 2μm, which may be the case that both the second exposure device and the exposure platform move, or that one of the second exposure device and the exposure platform moves, and the sum of the distance moved by the second exposure device and the distance moved by the exposure platform is 2μm. According to the thickness error of the second mask, the distance between the second exposure device and the second cell is correspondingly adjusted so that the first exposure distance s and the second exposure distance s 2 The same fixed value or a fixed value within the same threshold range is convenient for calling the exposure strategy and obtaining the expected exposure effect. Of course, there may also be an error between the thickness of the first cell and the thickness of the second cell, resulting in an error between the thickness of the first film-coated cell and the thickness of the second film-coated cell. The exposure platform is a platform that carries the cells (the first cell and the second cell) during the exposure process.

[0086] In a specific embodiment, the thickness of the first film-coated battery sheet is obtained as d; the thickness of the second film-coated battery sheet is measured as d 1 ;if|dd 1 |≤d 0 , the distance between the second exposure device and the exposure platform remains unchanged. 1 |>d 0 , when d>d 1 , control at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 is the same fixed value or a fixed value within the same threshold range; when d 1 >d, control at least one of the second exposure device and the exposure platform to move away from each other, so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range.

[0087] For example, when other exposure parameters are appropriate, the value of the thickness d of the first film-coated cell is 200 μm, and the first exposure distance s is 45 μm. The second mask is 1 μm thicker or thinner than the first mask, and the thickness deviation threshold d of the film-coated cell is 0 is 1 μm, at this time the second exposure distance s 2 The value of is 44μm or 46μm. When the second mask is 2μm thinner than the first mask, d>d 1 , control at least one of the second exposure device and the exposure platform to move 2 μm closer to each other, and maintain the second exposure distance s 2 The value of is 45μm; when the second mask is 2μm thicker than the first mask, d 1>d, control at least one of the second exposure device and the exposure platform to move away from each other by a distance of 2 μm, and maintain the second exposure distance s 2 The value of is 45 μm. In this embodiment, the first exposure distance s and the second exposure distance s are controlled. 2 is the same fixed value or a fixed value within the same threshold range. When selecting an exposure strategy, the first exposure distance s and the second exposure distance s 2 It is not used as a distinguishing characteristic parameter, and other parameters (such as mask thickness) are needed to match the exposure strategy, which makes the exposure strategy matching process simpler and reduces the parameters that need to be matched. 2 The same fixed value or a fixed value within the same threshold range can improve exposure accuracy.

[0088] In a specific embodiment, when the thickness of the second mask h 2 , the second exposure distance s 2 is the preset value; the first exposure number n is the upper limit of the setting range, when the second exposure number n 2 The first exposure number n is within the setting range of the upper limit value, and the second exposure number n 2 Adapt the first exposure attenuation percentage α corresponding to the first exposure sequence number n; for the second exposure sequence number n 2 The first exposure attenuation percentage α corresponding to the time is compensated, including: when the numerical value of the first irradiance intensity q decays to q(1-α); the numerical gain of the first exposure time t is increased to t / (1-α). The first exposure number n is the upper limit value of the set range, which means that within the preset range, such as [0,9999], [10000,19999], [20000,29999], [30000,39999], and [40000,49999], 9999, 19999, 29999, 39999 and 49999 are selected as the value of n, and the set range is a range of fixed length. Then, when the length and upper limit of the set range are known, the lower limit value can be calculated by knowing the upper limit value, and then the second exposure number n 2 The first exposure number n is within the setting range of the upper limit value, and the second exposure number n 2The first exposure attenuation percentage α corresponding to the first exposure sequence number n can be adapted. The product of the first irradiance intensity q and the first exposure duration t is called the first exposure energy. When other exposure parameters are the same, the first exposure energy determines the result of exposure. When multiple second masks with the same parameters are exposed, the first exposure energy needs to be kept within a preset range, preferably a constant value. When the first exposure energy is required to be kept at a constant value, the value of the first irradiance intensity q is decayed to q(1-α), and the value of the first exposure duration t is increased to t / (1-α), so that the first exposure energy can be kept at a constant value. For example, the theoretical value of the first irradiance intensity q is 92.78mW / cm2, and the theoretical value of the first exposure duration t is 0.485s. When the number of exposures is 30056, the corresponding first exposure attenuation percentage α is 3%, and the actual value of the first irradiance intensity q is decayed to 90mW / cm2. The actual value of the first exposure duration t should be increased to 0.5s. For example, the first exposure energy needs to be maintained within a deviation range of 3%, and the actual value of the first irradiance intensity q is attenuated by 3%, and the actual value of the first exposure time t may not be increased.

[0089] In a specific embodiment, when h>h 2 , controlling at least one of the second exposure device and the exposure platform to move toward each other so that the first exposure distance s and the second exposure distance s 2 is the same fixed value or a fixed value within the same threshold range; when h 2 >h, control at least one of the second exposure device and the exposure platform to move away from each other so that the first exposure distance s and the second exposure distance s 2 are the same fixed value or fixed values ​​within the same threshold range.

[0090] In a specific embodiment, when the exposure device is a projection exposure structure, the first exposure distance s and the second exposure distance s 2 are the distances from the optimal focal plane of the mask pattern projection to the exposure surface of the battery; when the exposure device is a proximity exposure structure, the first exposure distance s and the second exposure distance s 2 They are all the distances from the mask to the exposure surface of the cell.

[0091] In a specific embodiment, when the thickness of the second mask h 2 is the preset value, the second exposure distance s 2 is the first fixed value, and the exposure strategy cannot be matched; the second exposure distance s 2 After changing to the second fixed value, the exposure strategy is matched. The second exposure distance s 2The first fixed value is 43 μm. The exposure strategy library does not contain a first exposure distance s with a value of 43 μm, but the exposure strategy library contains a first exposure distance s with a value of 45 μm. 2 After changing to 45μm, the exposure strategy can be matched. The prerequisite for the application of this method is that the second exposure distance s 2 The change from the first fixed value to the second fixed value is within the allowable range of the exposure error. This method can reduce the number of exposure strategies in the exposure strategy library and reduce the cost of building the exposure strategy library in the early stage.

[0092] In a specific embodiment, when the thickness of the second mask h 2 The result of the difference or comparison with any fixed value of the thickness h of the first mask is within the first threshold range, then the two are successfully adapted; when the second exposure distance s 2 The difference or comparison result of the first exposure distance s is within the second threshold range, and the two are successfully adapted; when the second exposure sequence number n 2 If the difference or comparison result of the first exposure number n is within the third threshold range, the two are successfully adapted. This method can reduce the number of exposure strategies in the exposure strategy library and reduce the cost of building the exposure strategy library in the early stage.

[0093] It should be noted that the first mask can be a mask in a test state or a mask in a working state. For example, the initial exposure strategy in the exposure strategy library comes from the mask in the test state, but when the mask in the working state cannot match the exposure strategy in the exposure strategy library, a new exposure strategy formed for the mask in the working state will also be added to the exposure strategy library. The second mask is generally a mask in the working state, but when the mask in the working state cannot match the exposure strategy in the exposure strategy library, the second mask is converted into a mask in the test state.

[0094] Example 2

[0095] An exposure control method comprises the following steps: obtaining training exposure parameters; forming an exposure strategy according to the training exposure parameters; obtaining actual exposure parameters; matching the exposure strategy according to the actual exposure parameters; and exposing a mask according to the matched exposure strategy.

[0096] Wherein, obtaining the training exposure parameters includes: obtaining the thickness h of the first mask and the first exposure distance s; calculating / obtaining the first exposure attenuation percentage α when the first exposure number is n. For example, if the exposure attenuation of the exposure light source is less than 50,000 times / 1%, it can be determined that the exposure attenuation of the exposure light source is small, and the first exposure attenuation percentage may not be obtained, and the influence of the exposure attenuation on the exposure result may be ignored.

[0097] Forming an exposure strategy according to the training exposure parameters includes: when the thickness h of the first mask and the first exposure distance s are fixed values, changing at least one parameter value of the first irradiation intensity q and the first exposure time t, and compensating for the first exposure attenuation percentage α corresponding to the first exposure sequence number being n times until the expected exposure effect is obtained; on the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure distance s, the first exposure sequence number n, the first exposure attenuation percentage α corresponding to the first exposure sequence number being n times, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy; the first exposure distance s is a fixed value, the value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy.

[0098] Obtaining the actual exposure parameters includes obtaining the thickness h of the second mask 2 , the second exposure distance s 2 , the second exposure number n 2 .

[0099] Matching the exposure strategy according to the actual exposure parameters includes: selecting and the thickness h of the second mask 2 , the second exposure distance s 2 , the second exposure number n 2 The thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n are respectively adapted; the first exposure attenuation percentage α, the first irradiation intensity q, and the first exposure time t are selected according to the thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n;

[0100] Exposing the mask according to the matched exposure strategy includes: exposing the second mask according to the selected first irradiation intensity q and the first exposure time t, and for the second exposure sequence number n 2 The first exposure attenuation percentage α corresponding to the time is compensated.

[0101] In a specific embodiment, the exposure strategy after fixing the exposure distance can refer to the following Table 2.

[0102] Table 2 Exposure strategy after fixed exposure distance

[0103] project h n α s q t Strategy 1 20 30056 3％ 45 90 0.5 Strategy 2 20 35000 4％ 45 90 0.5 Strategy 3 20 39005 4％ 45 90 0.5 Strategy 4 30 39016 4％ 45 100 0.8 Strategy 5 30 90678 9％ 45 100 0.8 Strategy 6 30 100115 10％ 45 100 0.8

[0104] For example, during exposure, the thickness of the second mask h 2 The value of is 20μm, the second exposure distance s 2 The value is 45μm, and the second exposure number n 2The value of is 35001 times, which belongs to the range of [35000,44999], and the first exposure attenuation percentage α is selected as 4%. Then, Strategy 2 or Strategy 3 in Table 2 can be selected, and the exposure device exposes the second mask according to the parameter combination of Strategy 2 or Strategy 3.

[0105] In this embodiment, an exposure strategy library is pre-established by using the first mask, and when the second mask is exposed, the parameters of the second mask (the thickness of the second mask h 2 ), parameters of the exposure equipment (second exposure number n 2 ) and the second exposure distance s 2 ; Match the parameters of the second mask and the exposure device with the parameters of the first mask and the exposure device in the exposure strategy library, and then call the successfully matched exposure strategy to expose the second mask. When the parameters of the second mask change, such as when the production model is changed, there is no need to use manual debugging, and the exposure strategy can be directly replaced to continuously expose the second mask with different parameter models.

[0106] In other embodiments, if the attenuation of the exposure device is small, the parameters of the exposure device (the first exposure number n, the first exposure attenuation percentage α, and the relationship between the two) may not be included in the exposure strategy library.

[0107] Example 3

[0108] like Figure 4 As shown in the figure, under the same exposure energy and the same mask line width, as the exposure distance increases, the line width of the grid line pattern formed by exposure decreases. Under the same exposure energy, as the exposure distance increases, the mask line width adapted to the exposure distance increases accordingly, and the original line width of the grid line pattern formed by exposure can be maintained.

[0109] Under the same exposure energy and exposure distance conditions, the larger the mask line width, the smaller the difference between the line width of the gate line pattern formed by exposure and the line width on the mask.

[0110] Under the same exposure energy conditions, the smaller the mask line width, the greater the tendency of the line width of the grid line pattern formed by exposure to decrease as the exposure distance increases; that is, within the same exposure distance variation range, the smaller the mask line width, the greater the reduction value of the line width of the grid line pattern. In combination with Example 1 or Example 2, within the same exposure distance variation range, a small mask line width relative to a large mask line width requires more exposure strategies to ensure that the exposure quality of the exposure equipment can remain stable under both small and large mask line width conditions. For example, when the exposure distance variation range is 10-100μm and the mask line width is 10μm, three exposure strategies need to be set, and when the mask line width is above 20μm, only one exposure strategy can be set. For another example, when the exposure distance variation range is 10-190μm and the mask line width is below 35μm, three exposure strategies need to be set, and when the mask line width is above 40μm, only one exposure strategy can be set.

[0111] like Figure 5 As shown in the figure, the grid difference refers to the difference between the line width of the mask and the line width of the grid line pattern formed by exposure. Under the same mask line width and the same exposure energy conditions, as the exposure distance increases, the grid difference increases, that is, the line width of the grid line pattern decreases. The greater the exposure energy, the greater the trend of the grid difference increasing as the exposure distance increases, and the greater the trend of the line width of the grid line pattern formed by exposure decreasing; that is, under low exposure energy conditions, the exposure distance can have a larger error range, and the impact on the exposure effect within this error range is small. Under the same exposure distance, the greater the exposure energy, the greater the grid difference, that is, the line width of the grid line pattern formed by exposure decreases.

[0112] In combination with Example 1 or Example 2, the greater the exposure energy, the greater the tendency of the plate grid difference to increase with the increase of the exposure distance, and the greater the tendency of the line width of the grid line pattern formed by exposure to decrease; therefore, within the same exposure distance variation range, more exposure strategies need to be formed for high exposure energy relative to low exposure energy, so that the exposure quality of the exposure device can remain stable under both low and high exposure energies. For example, the exposure distance variation range is 0-150μm, and the exposure energy is 70mJ / cm 2 When the exposure energy is 90mJ / cm 2 In the above case, three exposure strategies need to be set.

[0113] It should be noted that Figure 4 The relationship between exposure distance and mask line width under the same exposure energy as shown in Figure 5 The relationship between exposure distance and grid difference under the same mask line width shown is at least applicable to the proximity exposure process for photovoltaic cell production.

[0114] Example 4

[0115] An exposure system includes a control device, the control device including: a training parameter acquisition module for acquiring training exposure parameters; an exposure strategy module capable of forming an exposure strategy according to the training exposure parameters; an actual parameter acquisition module for acquiring actual exposure parameters; an exposure strategy matching module capable of matching the exposure strategy according to the actual exposure parameters; and an exposure control module capable of controlling an exposure device to perform corresponding actions according to the matched exposure strategy.

[0116] The training parameter acquisition module is communicatively connected to the exposure strategy module, and the actual parameter acquisition module, the exposure strategy matching module and the exposure device are all communicatively connected to the exposure control module.

[0117] In a specific implementation, the training parameter acquisition module can acquire parameters including at least: the thickness h of the first mask, the first exposure sequence number n, the first exposure attenuation percentage α corresponding to the first exposure sequence number n, the first exposure distance s, the first irradiation intensity q and the first exposure time t.

[0118] The exposure strategy module matches a set of first mask thickness h, first exposure sequence n, first exposure attenuation percentage α corresponding to the first exposure sequence n, first exposure distance s, first irradiation intensity q and first exposure time t that can obtain the expected exposure effect to form an exposure parameter set. Each set of parameters that can form the expected exposure effect constitutes an exposure strategy.

[0119] The actual parameter acquisition module can acquire parameters including at least: the thickness h of the second mask 2 , the second exposure number n 2 .

[0120] Exposure strategy matching module, selects the thickness h of the second mask 2 , the second exposure number n 2 , respectively adapt the thickness h of the first mask and the first exposure number n; according to the adapted thickness h of the first mask and the first exposure number n, select the first exposure attenuation percentage α, the first exposure distance s, the first irradiation intensity q and the first exposure time t.

[0121] In this embodiment, an exposure strategy library is pre-established by using the first mask, and when the second mask is exposed, the parameters of the second mask (the thickness of the second mask h 2 ) and the parameters of the exposure equipment (second exposure number n 2), the parameters of the second mask and the exposure device are matched with the parameters of the first mask and the exposure device in the exposure strategy library, and then the matched exposure strategy is called to expose the second mask. When the parameters of the second mask change, for example, when the production is changed, it is not necessary to use manual debugging, and the exposure strategy can be directly replaced to continuously expose the second mask with different parameter models.

[0122] Example 5

[0123] An exposure system includes a controller and an exposure device, wherein the controller can execute the method in any one of Embodiments 1 to 3 to control the exposure device to perform exposure. For example, the controller can be the electronic device in Embodiment 6, and the exposure device can adopt a projection exposure structure, a proximity exposure structure, or an LDI exposure structure.

[0124] Example 6

[0125] This embodiment provides an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the exposure control method provided in the above method embodiment.

[0126] The memory can be used to store software programs and modules. The processor executes various functional applications and data processing by running the software programs and modules stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, application programs required for functions, etc.; the data storage area can store data created according to the use of the device, etc. In addition, the memory can include a high-speed random access memory and can also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other volatile solid-state storage devices. Accordingly, the memory can also include a memory controller to provide the processor with access to the memory.

[0127] The processor may include one or more single-core or multi-core processors. The processor may include any combination of general-purpose processors and special-purpose processors (e.g., graphics processors, application processors, baseband processors, etc.).

[0128] This embodiment also provides a computer-readable storage medium, which can be set in an electronic device to store at least one instruction or at least one program related to implementing an exposure control method. The at least one instruction or the at least one program is loaded and executed by the processor to implement the exposure control method provided by the above method embodiment.

[0129] Optionally, in an embodiment of the present invention, the above-mentioned storage medium may include but is not limited to: a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and other media that can store program codes.

[0130] This embodiment also provides a computer program product, which includes a computer program / instructions. When the computer program product runs on an electronic device, the computer program / instructions are loaded and executed by a processor to implement the steps of the exposure control method provided in the above-mentioned various optional embodiments.

[0131] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with this technology to understand the content of the present invention and implement it. They cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. An exposure control method, characterized in that: The following steps are involved: Get training exposure parameters; forming an exposure strategy based on the training exposure parameters; Get actual exposure parameters; Match the exposure strategy according to the actual exposure parameters; The mask is exposed according to the matched exposure strategy.

2. The exposure control method according to claim 1, characterized in that: The obtaining of the training exposure parameters comprises: Obtaining the thickness h of the first mask; The forming of the exposure strategy according to the training exposure parameters comprises: When the thickness h of the first mask is a fixed value, changing at least one parameter value of the first exposure distance s, the first irradiation intensity q and the first exposure time t until the expected exposure effect is obtained; On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure distance s, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy; The value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy; The obtaining of the actual exposure parameters includes: obtaining the thickness h2 of the second mask; The matching of the exposure strategy according to the actual exposure parameters includes: Selecting a thickness h of the first mask that matches the thickness h2 of the second mask; selecting a first exposure distance s, a first irradiation intensity q and a first exposure time t according to the matched thickness h of the first mask; Exposing the mask according to the matched exposure strategy includes: The second mask is exposed according to the selected first exposure distance s, first radiation intensity q and first exposure time t.

3. The exposure control method according to claim 2, characterized in that: The obtaining of the training exposure parameters further includes: Calculate / obtain the first exposure attenuation percentage as α when the first exposure sequence number is n; The forming of the exposure strategy according to the training exposure parameters comprises: When the thickness h of the first mask and the first exposure sequence number n are fixed values, at least one parameter value among the first exposure distance s, the first irradiation intensity q and the first exposure time t is changed, and the first exposure attenuation percentage α corresponding to the first exposure sequence number n is compensated until the expected exposure effect is obtained; On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure number n, the first exposure attenuation percentage α corresponding to the first exposure number n, the first exposure distance s, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy; The matching of the exposure strategy according to the actual exposure parameters includes: Selecting the thickness h2 of the second mask and the second exposure number n2, respectively adapting the thickness h of the first mask and the first exposure number n; selecting the first exposure attenuation percentage α, the first exposure distance s, the first irradiation intensity q and the first exposure time t according to the adapted thickness h of the first mask and the first exposure number n; Exposing the mask according to the matched exposure strategy includes: The second mask is exposed according to the selected first exposure distance s, the first irradiation intensity q and the first exposure time t, and compensation is performed for the first exposure attenuation percentage α corresponding to the second exposure sequence number n2.

4. The exposure control method according to claim 1, characterized in that: The obtaining of the training exposure parameters comprises: Obtaining a thickness h of a first mask and a first exposure distance s; The forming of the exposure strategy according to the training exposure parameters comprises: When the thickness h of the first mask is a fixed value, changing at least one parameter value of the first irradiation intensity q and the first exposure time t until a desired exposure effect is obtained; On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure distance s, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy; The first exposure distance s is a fixed value, the value of the thickness h of the first mask is a plurality of fixed values, and each fixed value of the thickness h of the first mask corresponds to at least one exposure strategy; The obtaining of the actual exposure parameters includes: obtaining the thickness h2 of the second mask and the second exposure distance s2; The matching of the exposure strategy according to the actual exposure parameters includes: Selecting the thickness h2 of the second mask and the second exposure distance s2 to respectively adapt to the thickness h of the first mask and the first exposure distance s; selecting the first irradiation intensity q and the first exposure time t according to the adapted thickness h of the first mask and the first exposure distance s; Exposing the mask according to the matched exposure strategy includes: The second mask is exposed according to the selected first radiation intensity q and first exposure time t.

5. The exposure control method according to claim 4, characterized in that: The obtaining of the training exposure parameters further includes: Calculate / obtain the first exposure attenuation percentage as α when the first exposure sequence number is n; The forming of the exposure strategy according to the training exposure parameters comprises: When the thickness h of the first mask, the first exposure distance s and the first exposure sequence number n are fixed values, at least one parameter value of the first irradiation intensity q and the first exposure duration t is changed, and the first exposure attenuation percentage α corresponding to the first exposure sequence number n is compensated until the expected exposure effect is obtained; On the premise of obtaining the expected exposure effect, the exposure parameter set formed by the thickness h of the first mask, the first exposure distance s, the first exposure number n, the first exposure attenuation percentage α corresponding to the first exposure number n, the first irradiation intensity q and the first exposure time t constitutes an exposure strategy; The matching of the exposure strategy according to the actual exposure parameters includes: Selecting the thickness h2 of the second mask, the second exposure distance s2, and the second exposure sequence number n2 to respectively adapt the thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n; selecting the first exposure attenuation percentage α, the first irradiation intensity q, and the first exposure time t according to the adapted thickness h of the first mask, the first exposure distance s, and the first exposure sequence number n; Exposing the mask according to the matched exposure strategy includes: The second mask is exposed according to the selected first irradiation intensity q and the first exposure time t, and compensation is performed for the first exposure attenuation percentage α corresponding to the second exposure sequence number n2.

6. The exposure control method according to claim 4, characterized in that: The obtaining of the training exposure parameters further includes: obtaining a thickness of the first cell sheet including the mask as d; The obtaining of the actual exposure parameters further includes: measuring the thickness of the second cell sheet including the mask as d1; When d>d1, controlling at least one of the second exposure device and the exposure platform to move in a direction close to each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range; When d1>d, at least one of the second exposure device and the exposure platform is controlled to move away from each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range.

7. The exposure control method according to claim 4, characterized in that: The obtaining of the training exposure parameters further includes: obtaining a thickness of the first cell sheet including the mask as d; The obtaining of the actual exposure parameters further includes: measuring the thickness of the second cell sheet including the mask as d1; If |d-d1|≤d0, the distance between the second exposure device and the exposure platform remains unchanged; If |d-d1|>d0, When d>d1, controlling at least one of the second exposure device and the exposure platform to move in a direction close to each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range; When d1>d, at least one of the second exposure device and the exposure platform is controlled to move away from each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range.

8. The exposure control method according to claim 5, characterized in that: When the thickness of the second mask is h2, the second exposure distance s2 is a preset value; The first exposure number n is an upper limit value of the setting range. When the second exposure number n2 is within the setting range where the first exposure number n is an upper limit value, the second exposure number n2 is adapted to the first exposure attenuation percentage α corresponding to the first exposure number n. Compensating for the first exposure attenuation percentage α corresponding to the second exposure sequence number n2 includes: When the value of the first irradiance intensity q decays to q(1-α); The value of the first exposure time t is increased to t / (1-α).

9. The exposure control method according to claim 4, characterized in that: When h>h2, controlling at least one of the second exposure device and the exposure platform to move in a direction close to each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range; When h2>h, at least one of the second exposure device and the exposure platform is controlled to move away from each other, so that the first exposure distance s and the second exposure distance s2 are the same fixed value or fixed values ​​within the same threshold range.

10. The exposure control method according to claim 4, characterized in that: When the thickness h2 of the second mask is a preset value and the second exposure distance s2 is a first fixed value, the exposure strategy cannot be matched; the second exposure distance s2 is changed to the second fixed value and then the exposure strategy is matched.

11. The exposure control method according to claim 5, characterized in that: When the difference or comparison between any fixed value of the thickness h2 of the second mask and the thickness h of the first mask is within the first threshold range, the two are successfully adapted; When the difference or comparison between any fixed value of the second exposure distance s2 and the first exposure distance s is within the second threshold range, the adaptation between the two is successful; When the difference or comparison result between any fixed value of the second exposure sequence number n2 and the first exposure sequence number n is within the third threshold range, the adaptation between the two is successful.

12. The exposure control method according to any one of claims 1 to 11, characterized in that: In the same exposure energy and exposure distance variation range, a small mask line width forms more exposure strategies than a large mask line width; Alternatively, within the same exposure distance variation range, high exposure energy forms more exposure strategies relative to low exposure energy.

13. An exposure system, characterized in that: The invention comprises a controller and an exposure device, wherein the controller can execute the method according to any one of claims 1 to 12 to control the exposure device to perform exposure.

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