Silicon carbide MOSFET high temperature ion implantation method and device

Abstract

The invention relates to the technical field of MOSFET preparation, and discloses a silicon carbide MOSFET high-temperature ion implantation method and device. The invention pre-processes a substrate and obtains specifications and performance parameters, designs a high-temperature ion implantation scheme according to the parameters, prepares a nanostructure on the surface of the substrate to guide the ion implantation, heats the substrate to a working state, performs high-temperature ion implantation through the nanostructure, collects and analyzes implantation effect data in real time, optimizes the implantation effect by adjusting parameters, and completes the preparation of an intermediate state substrate. The method improves the accuracy and uniformity of ion implantation through nanostructure guidance and real-time feedback regulation, and solves the problem of insufficient accuracy of high-temperature ion implantation of silicon carbide in the prior art.

Description

Technical Field

[0001] The present invention relates to the technical field of MOSFET preparation, and in particular to a method and device for high-temperature ion implantation of silicon carbide MOSFET. Background Art

[0002] Silicon carbide (SiC) is widely used in power electronic devices, such as SiC MOSFET, due to its excellent high temperature stability, high breakdown field strength and high electron saturation velocity. In order to improve the performance and reliability of the device, high temperature ion implantation is used as an important doping method in the manufacturing process of SiC MOSFET.

[0003] Traditional ion implantation methods have problems such as uneven ion diffusion, inaccurate depth control, and damage to the substrate surface in high-temperature environments, which limits the reliability and stability of the final manufactured devices. Silicon carbide materials have high hardness and high structural density, and it is difficult to control the uniformity and depth of ion implantation in high-temperature environments, which can easily lead to insufficient implantation accuracy and affect the performance and reliability of MOSFET. Summary of the invention

[0004] The object of the present invention is to provide a method and device for high temperature ion implantation of silicon carbide MOSFET, aiming to solve the problem of insufficient precision of high temperature ion implantation of silicon carbide in the prior art.

[0005] The present invention is implemented in this way. In a first aspect, the present invention provides a high-temperature ion implantation method for silicon carbide MOSFET, comprising:

[0006] Pre-treating a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

[0007] Acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

[0008] Performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding the high-temperature ion implantation;

[0009] Performing a heating treatment on the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

[0010] Real-time data collection is performed on the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, the high-temperature ion implantation effect characteristics are analyzed, and parameters of subsequent high-temperature ion implantations are adjusted according to the analysis results, until high-temperature ion implantation is performed on the substrate to be prepared through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

[0011] In a second aspect, the present invention provides a silicon carbide MOSFET high temperature ion implantation device, which is used to implement a silicon carbide MOSFET high temperature ion implantation method as described in any one of the first aspects, comprising:

[0012] A pre-processing module, used for pre-processing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

[0013] A scheme analysis module, used to obtain specification parameters and performance parameters of the substrate to be prepared, and analyze the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, so as to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

[0014] A surface treatment module, used for performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme, to obtain a plurality of nanostructures arranged on the surface of the substrate to be prepared for guiding the high-temperature ion implantation;

[0015] a step execution module, configured to heat the substrate to be prepared so that the substrate to be prepared is in a working state, and perform high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

[0016] A step adjustment module is used to collect real-time data on the high-temperature ion implantation effect of the substrate to be prepared, obtain high-temperature ion implantation effect characteristics, analyze the high-temperature ion implantation effect characteristics, and adjust parameters for subsequent high-temperature ion implantation according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

[0017] The present invention provides a high temperature ion implantation method for silicon carbide MOSFET, which has the following beneficial effects:

[0018] The present invention pre-treats a substrate and obtains specifications and performance parameters, designs a high-temperature ion implantation scheme according to these parameters, prepares a nanostructure on the surface of the substrate to guide the ion implantation, heats the substrate to a working state, performs high-temperature ion implantation through the nanostructure, collects and analyzes implantation effect data in real time, optimizes the implantation effect by adjusting parameters, and completes the preparation of an intermediate state substrate. The method improves the accuracy and uniformity of ion implantation through nanostructure guidance and real-time feedback regulation, and solves the problem of insufficient accuracy of high-temperature ion implantation of silicon carbide in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the steps of a high-temperature ion implantation method for silicon carbide MOSFET provided by an embodiment of the present invention;

[0020] Figure 2 It is a structural schematic diagram of a silicon carbide MOSFET high temperature ion implantation device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0022] The implementation of the present invention is described in detail below in conjunction with specific embodiments.

[0023] Reference Figure 1 , Figure 2 As shown, a preferred embodiment of the present invention is provided.

[0024] In a first aspect, the present invention provides a high temperature ion implantation method for silicon carbide MOSFET, comprising:

[0025] S1: pre-treating a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

[0026] S2: acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

[0027] S3: performing nanostructure preparation processing on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding high-temperature ion implantation;

[0028] S4: performing a heating treatment on the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

[0029] S5: Performing real-time data collection on the effect of high-temperature ion implantation of the substrate to be prepared to obtain characteristics of the high-temperature ion implantation effect, analyzing the characteristics of the high-temperature ion implantation effect, and adjusting parameters of subsequent high-temperature ion implantation according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

[0030] Specifically, in step S1 of the embodiment provided by the present invention, the substrate of the silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a wafer made of silicon carbide (SiC) material. As the basis of the device structure, silicon carbide is a wide bandgap semiconductor material with excellent electrical and thermal properties, suitable for high voltage, high power and high temperature environments. The substrate is used to grow the active layer of the device and support subsequent manufacturing processes such as ion implantation, surface oxidation and deposition of functional layers.

[0031] More specifically, before preparing MOSFET on a silicon carbide substrate, the silicon carbide substrate needs to be fully cleaned and planarized to remove impurities and reduce surface stress, thereby improving substrate quality. These measures ultimately help to improve ion implantation uniformity and control accuracy, and provide guarantees for the high performance of silicon carbide MOSFET. In this solution, the substrate that has completed pretreatment is marked as a substrate to be prepared.

[0032] Specifically, in step S2 of the embodiment provided by the present invention, the physical dimensions and geometric parameters of the substrate to be prepared, including thickness, diameter and surface flatness, are measured to confirm whether it meets the manufacturing requirements of MOSFET, understand the size and flatness of the substrate, ensure that it can meet the structural requirements required during ion implantation, and avoid differences in implantation depth caused by uneven surfaces.

[0033] More specifically, the electrical properties (such as resistivity and breakdown voltage) and thermal properties (such as thermal conductivity) of the substrate are measured. Commonly used detection techniques include four-probe testing, thermal conductivity testing, and electron microscope analysis. These performance parameters are used to evaluate the material properties of the substrate to ensure that the substrate does not undergo structural or performance changes under high temperature conditions, thereby meeting the requirements of the high-temperature ion implantation process.

[0034] More specifically, the type, energy and dose of ion implantation are determined based on the thickness of the substrate and the target electrical characteristics. Common ion implantation substances include nitrogen, phosphorus or aluminum. The implantation temperature is determined, usually between 800°C and 1000°C, to balance the depth of the ions and the stability of the substrate. The implantation dose and angle are selected to control the distribution uniformity and implantation depth of the ions. By optimizing the implanted ion type, energy and implantation temperature, it is ensured that the ions achieve the desired depth and distribution in the silicon carbide substrate, thereby improving the electrical performance of the subsequent MOSFET functional layers.

[0035] More specifically, in order to ensure the quality of the entire implantation process, a real-time data acquisition and parameter adjustment plan is developed, including monitoring the temperature, dose and distribution depth of ion implantation, real-time monitoring of the implantation process, and timely adjustment of the implantation parameters when deviations are found, to ensure the uniformity and consistency of ion implantation and improve the success rate of high-temperature ion implantation.

[0036] More specifically, based on the analysis results, the implantation dose, implantation depth, implantation temperature and surface protection strategy are combined to form the final process plan. The developed plan can ensure that the substrate has good thermal stability and electrical properties after ion implantation, meet the design requirements of MOSFET, and lay a solid foundation for subsequent device manufacturing.

[0037] It is understandable that through the above steps, the depth, distribution and dose of ion implantation can be precisely controlled, thereby optimizing the electronic properties, thermal conductivity and physical stability of the substrate, and providing the required performance support for the final prepared silicon carbide MOSFET. The successful implementation of these steps directly affects the switching speed, withstand voltage performance and overall efficiency of the device.

[0038] Specifically, in step S3 of the embodiment provided by the present invention, appropriate nanostructure parameters (such as size, shape, and spacing) are designed according to the ion implantation scheme, and computer simulation (such as finite element analysis) is used to determine the optimal nanostructure to guide the ion implantation path, improve the implantation uniformity and depth control accuracy, and through precise design and simulation, the nanostructure can effectively guide the distribution path of ions, ensure the uniformity of the substrate surface and interior during the implantation process, and help improve the implantation quality.

[0039] More specifically, nano-patterns are generated on the surface of a substrate using photolithography or electron beam etching technology. First, a photosensitive material (photoresist) is coated, and then a mask pattern of the nano-structure is formed through exposure and development. Photolithography or electron beam etching technology can accurately generate the expected nano-structure size and shape, ensuring the accuracy and repeatability of the structure, and providing a high-quality surface guide layer for ion implantation.

[0040] More specifically, plasma etching (such as reactive ion etching, RIE) or wet etching technology is used to etch the desired nanostructure on the substrate surface under the protection of the mask pattern. The etching depth and shape are adjusted according to the design requirements. Plasma etching can achieve nanoscale fine structures, so that the guiding nanostructure of ion implantation has the required height, depth and profile, ensuring that the ion implantation accurately covers the area to be prepared.

[0041] More specifically, organic solvents or plasma cleaning are used to remove photolithography mask residues to ensure that there is no residual material on the surface. Secondary cleaning of the substrate is performed to remove etching residues. After cleaning, there is no impurity or photoresist residue on the substrate surface, further improving the purity and injection effect of ion implantation and preventing material residues from affecting the ion diffusion path.

[0042] More specifically, a scanning electron microscope (SEM) or an atomic force microscope (AFM) is used to detect the morphology, spacing, and depth of the nanostructures to ensure that they meet the design requirements. If deviations are found, appropriate etching depth or structural adjustments are made. The detection and optimization steps ensure that the size and shape of the nanostructures meet the accuracy requirements of the ion implantation scheme, ensuring that each nanostructure can effectively guide the ion implantation position and depth.

[0043] It can be understood that through this series of steps, the nanostructures on the surface of the substrate to be prepared can effectively guide the distribution of high-temperature ions, making the injection uniform and stable. These nanostructures, as "path controllers" for ions, not only improve the injection accuracy of ions, but also enhance the electrical performance and reliability of the device, laying the foundation for the subsequent high-performance application of silicon carbide MOSFET.

[0044] Specifically, in step S4 of the embodiment provided by the present invention, the substrate to be prepared is placed in a high-temperature heating furnace or heat treatment equipment for heating. The substrate temperature is usually set between 800°C and 1000°C according to the ion implantation scheme to ensure the stability of the substrate material during the ion implantation process. By controlling the heating rate and uniformity, the substrate is prevented from cracking or warping due to thermal shock. The heating treatment puts the substrate in a high-temperature working state, which can effectively reduce the stress concentration in the material and improve the thermal diffusion capacity of the substrate, providing support for energy transfer during the ion implantation process. High temperature also makes the diffusion of ions in the substrate more uniform, improving the implantation quality.

[0045] More specifically, a suitable ion source (such as nitrogen ions, phosphorus ions, aluminum ions, etc.) is selected and accelerated to a specified energy level, usually between tens of keV and hundreds of keV, to ensure that the ions can reach the predetermined depth. The appropriate ion energy enables the ions to be distributed at the expected depth in the substrate while maintaining the integrity of the material structure and avoiding excessive damage to the substrate surface.

[0046] More specifically, under high temperature conditions, ion implantation is guided by the prepared nanostructure. The role of the nanostructure is to concentrate the injection path of the ion beam to ensure that the ions can be evenly and directionally distributed on the surface and inside of the substrate. The nanostructure enhances the spatial distribution control of the ions, making the implantation more uniform and improving the accuracy of ion deposition in the substrate. At the same time, the nanostructure can reduce surface reflection and diffusion, improve the utilization efficiency of ions, and enhance the final electrical performance of the device.

[0047] More specifically, ion implantation is performed while the substrate is maintained at a high temperature. The ion implantation dose and injection time are set according to the plan to ensure that each ion enters the substrate with the correct energy. The entire process, including ion beam intensity, injection time and surface temperature, is monitored using ion implantation equipment. The diffusion rate of ions is higher at high temperatures, making them more evenly distributed inside the substrate and reducing ion accumulation after implantation. High temperatures can also reduce lattice damage during ion implantation, helping to enhance the thermal stability and conductivity of the device.

[0048] More specifically, after ion implantation, annealing is usually performed, and the substrate is kept at a high temperature (usually 1200°C to 1600°C) to promote the redistribution of the implanted ions in the lattice and repair the lattice defects caused by implantation. Thermal annealing can reduce the lattice defects caused by implanted ions, restore the crystal structure of the material, and improve the electrical properties and mechanical strength of the substrate. Through this process, the combination of ions and substrate materials is more stable, thereby improving the reliability of the device.

[0049] More specifically, after ion implantation and annealing are completed, the temperature of the substrate is gradually lowered to avoid thermal stress or substrate damage caused by sudden cooling. A slow cooling method in an inert gas protection environment can be adopted. Slow cooling can reduce the internal stress of the substrate and avoid cracks or deformation on the surface and inside of the substrate after heat treatment, thereby providing a high-quality substrate for subsequent device manufacturing.

[0050] It can be understood that through the above steps, the ion implantation process carried out on the substrate to be prepared in a high temperature environment can significantly improve the distribution uniformity and implantation accuracy of the ions, ensure that the implanted ions reach a predetermined depth and concentration in the substrate, and the role of the nanostructure effectively guides the injection path of the ions, reducing reflection and energy loss. At the same time, through high-temperature implantation and annealing treatment, the lattice defects of the substrate are repaired, and the electrical properties and thermal stability of the substrate are improved. This process lays a solid foundation for the high-voltage, high-power and high-temperature applications of the final MOSFET device.

[0051] Specifically, in step S5 of the embodiment provided by the present invention, the real-time monitoring system in the ion implantation equipment is used to collect key parameters such as ion energy, implantation depth, dose, temperature, and ion current intensity, and an online monitoring system (such as optical, electron microscopic detection, and temperature sensor) is used to obtain real-time data during the implantation process. The real-time collected data can directly reflect the effect of ion implantation, such as the distribution depth of ions in the substrate and whether the dose meets the preset requirements. The high-precision acquisition system can promptly detect deviations in the ion implantation process to avoid the accumulation of deviations that affect the final substrate performance.

[0052] More specifically, the real-time data is compared with the expected parameters of ion implantation to analyze the uniformity of ion distribution, the accuracy of implantation depth and concentration, and ensure that they meet the design requirements of the high-temperature ion implantation scheme. Commonly used analysis methods include ion distribution maps, depth profiles, etc. Through the analysis of ion distribution data, problems such as non-uniform distribution, offset or insufficient dose that may occur during the ion implantation process can be quickly identified, ensuring the effectiveness and consistency of each nanostructure in guiding ion implantation.

[0053] More specifically, based on the results of real-time data analysis, the parameters of ion implantation are adjusted, including ion energy, implantation dose, implantation temperature and angle, etc. The adjusted parameters can be gradually applied during the implantation process to ensure that the ions are distributed as designed and achieve the required implantation depth. Dynamic adjustment ensures the accuracy and stability of each implantation stage, ensuring that the high-temperature ion implantation process meets the design requirements. Optimized implantation parameters can effectively reduce unnecessary losses and improve the utilization efficiency of ions in the substrate.

[0054] More specifically, with the support of dynamic adjustment, ions are precisely guided by nanostructures to ensure that they are evenly distributed in the preset area of ​​the substrate, so that each nanostructure evenly conducts ions to the interior of the substrate. The guiding role of the nanostructure is fully exerted, and the depth and concentration of ion distribution are ensured to achieve the best effect through the adjusted ion injection parameters, thereby improving the conductivity and structural stability of the substrate.

[0055] More specifically, after meeting the requirements of ion implantation uniformity and precision, the implantation process is stopped to obtain an intermediate state of a silicon carbide substrate. At this time, the substrate already has some structural features of a MOSFET, but still requires further heat treatment and surface coating processing. The intermediate state substrate already has deep structural characteristics formed by high-temperature ion implantation, laying a solid foundation for subsequent functional layer processing and high-temperature annealing treatment. This intermediate state makes precise processing of subsequent processes possible, thereby improving the overall performance of the device.

[0056] More specifically, the intermediate state substrate undergoes high-temperature annealing treatment to repair lattice defects caused by ion implantation, and is surface coated (such as silicon oxide or silicon nitride) to provide protection for further processing of the functional layer. Annealing treatment and surface coating can stabilize the surface and internal structure of the substrate and eliminate micro-defects caused by ion implantation. After optimized surface coating treatment, the substrate surface acquires good heat resistance and electrical breakdown resistance, laying the foundation for the processing of the functional layer.

[0057] It is understandable that the entire process ensures precise control of the high-temperature ion implantation process through real-time monitoring and dynamic adjustment, so that the distribution of ions in the substrate meets the design requirements. The final intermediate state substrate has stable electrical and physical properties and can withstand high-temperature annealing and surface coating treatment. The substrate after these treatments provides an excellent material basis for the functional layer processing of silicon carbide MOSFET, improves the overall stability and high-voltage performance of the device, and ensures that the final MOSFET device has excellent conductivity, high temperature resistance and anti-breakdown characteristics.

[0058] The present invention provides a high temperature ion implantation method for silicon carbide MOSFET, which has the following beneficial effects:

[0059] The present invention pre-treats a substrate and obtains specifications and performance parameters, designs a high-temperature ion implantation scheme according to these parameters, prepares a nanostructure on the surface of the substrate to guide the ion implantation, heats the substrate to a working state, performs high-temperature ion implantation through the nanostructure, collects and analyzes implantation effect data in real time, optimizes the implantation effect by adjusting parameters, and completes the preparation of an intermediate state substrate. The method improves the accuracy and uniformity of ion implantation through nanostructure guidance and real-time feedback regulation, and solves the problem of insufficient accuracy of high-temperature ion implantation of silicon carbide in the prior art.

[0060] Preferably, the step of pre-treating a substrate for preparing a silicon carbide MOSFET to obtain the substrate to be prepared comprises:

[0061] S11: performing surface cleaning and polishing on a substrate for preparing a silicon carbide MOSFET;

[0062] S12: performing surface oxidation treatment or surface passivation treatment on the substrate that has been surface cleaned and polished to obtain the substrate to be prepared.

[0063] Specifically, an organic solvent (such as ethanol and acetone) is used to clean the surface of the substrate to remove oil and organic matter, and then it is rinsed with deionized water to ensure that there is no residue on the surface. In order to completely remove possible particulate contamination, ultrasonic cleaning equipment can be further used to remove organic matter, dust and other impurities on the surface of the substrate through cleaning, thereby providing a clean surface for subsequent polishing and oxidation treatment, avoiding interface defects caused by impurities, and thus improving the electrical performance and device reliability of MOSFET.

[0064] More specifically, mechanical polishing or chemical mechanical polishing (CMP) is used to polish the surface of the substrate. Mechanical polishing generally uses abrasive fluid and polishing pads to control the polishing force and time. CMP further improves the surface flatness through a combination of chemical reaction and mechanical action. Polishing treatment makes the surface smoothness and uniformity of the substrate reach the micro-nano level, reduces surface roughness, and lays a good foundation for ion implantation and subsequent functional layer processing. A substrate with a flat surface can reduce interface scattering and improve the conductivity and voltage resistance of the device.

[0065] More specifically, the polished substrate is placed in an oxidation furnace for high-temperature oxidation treatment, usually in a dry or wet oxygen atmosphere, at a temperature range of 1000°C to 1200°C. The oxidation time is determined according to the required oxide layer thickness, generally ranging from tens of minutes to hours. Surface oxidation forms a layer of silicon dioxide (SiO2) film on the substrate, which acts as an insulating layer, helps the uniformity and accuracy of subsequent ion implantation, and improves the high-voltage resistance of MOSFET devices. The oxide layer can also reduce surface defects and stress concentration, and improve the long-term stability of the device.

[0066] More specifically, if passivation treatment is selected, the substrate is exposed to a passivation solution, usually a nitride or fluoride solution is used to form a stable passivation layer, and plasma passivation treatment can also be used. The passivation layer is formed at a relatively low temperature and is generally thin. The passivation layer can form a protective film on the surface to prevent external pollutants or moisture from corroding the substrate surface and improve the durability of the substrate. The passivation layer can also inhibit surface carrier recombination and reduce the surface state density, thereby improving the electrical performance of the MOSFET.

[0067] More specifically, the substrate that has been cleaned, polished, oxidized or passivated becomes a substrate to be prepared, which has good surface properties and a stable surface suitable for ion implantation. The substrate to be prepared through pretreatment has a low surface defect density and high surface flatness, which effectively improves the interface properties of the substrate. The pretreated substrate is suitable for subsequent high-temperature ion implantation, which improves the uniformity of ion distribution and the accuracy of implantation, and provides support for the overall performance of silicon carbide MOSFET devices.

[0068] It can be understood that after surface cleaning, polishing, oxidation or passivation treatment, the surface of the substrate is clean, flat, and has a low defect density. The presence of the insulating or passivation layer further optimizes the chemical and physical properties of the surface, providing an ideal basis for the ion implantation process. Such a substrate to be prepared is not only suitable for high-temperature processes, but also ensures that the final MOSFET device meets high standards in terms of electrical performance, stability and durability, thereby improving the overall performance and reliability of the device.

[0069] Preferably, the step of obtaining the specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared comprises:

[0070] S21: collecting data on specification parameters and performance parameters of the substrate to be prepared to obtain specification parameters and performance parameters of the substrate to be prepared;

[0071] S22: performing digital simulation processing on the substrate to be prepared according to the specification parameters of the substrate to be prepared, so as to obtain a substrate digital model used for performing digital simulation feedback on the substrate to be prepared;

[0072] S23: performing effect simulation processing on high temperature ion implantation according to the performance parameters of the substrate to be prepared to obtain implantation effect simulation characteristics;

[0073] S24: acquiring target preparation morphological parameters of the silicon carbide MOSFET, and performing morphological simulation on the target preparation morphological parameters based on the substrate digital model to obtain a substrate target preparation model;

[0074] S25: performing reverse simulation analysis of a preparation plan for the substrate target preparation model according to the implantation effect simulation characteristics, and obtaining a high-temperature ion implantation plan corresponding to the substrate target preparation model.

[0075] Specifically, precision measuring equipment is used to measure the thickness, surface flatness, lattice structure, doping concentration, defect density and other specification parameters of the substrate to be prepared in detail. At the same time, the thermal stability, electrical properties (such as carrier mobility), mechanical strength and other performance parameters of the substrate are collected. The detailed parameter collection provides real data support for subsequent scheme design, ensuring that the subsequent high-temperature ion implantation process complies with the physical and chemical properties of the substrate, avoiding poor implantation effect or performance degradation due to substrate parameter deviation.

[0076] More specifically, based on the collected specification parameters, computer simulation technology is used to digitally model the substrate and generate a digital model of the substrate. This model contains information such as the geometric structure, lattice arrangement, and surface defects of the substrate, and can truly reflect the actual state of the substrate. The digital model of the substrate provides an accurate reference for the subsequent ion implantation effect simulation and target morphology analysis, making the digital simulation process more in line with the actual situation, thereby improving the effectiveness of the design scheme.

[0077] More specifically, based on the performance parameters, the high-temperature ion implantation process is simulated to evaluate the effects of parameters such as ion energy, implantation depth, dose and temperature on the substrate. The simulation can use molecular dynamics or Monte Carlo methods to predict the distribution state of the implanted ions in the substrate. The ion implantation effect simulation can predict the ion distribution and substrate response in a high-temperature environment in advance, analyze possible defect generation, stress changes, etc. during the implantation process, and provide a basis for optimizing the implantation parameters.

[0078] More specifically, according to the design requirements of silicon carbide MOSFET, target preparation morphological parameters are set, including key indicators such as channel length, gate oxide thickness, junction depth, doping distribution, and surface morphology. These parameters provide specific technical requirements for subsequent implantation schemes, and clear target morphological parameters provide clear quality control standards for high-temperature ion implantation, ensuring that the parameters selected in the implantation scheme can meet the electrical performance and reliability requirements of MOSFET devices.

[0079] More specifically, morphology simulation analysis is performed based on the digital model of the substrate and the target preparation morphology parameters. This step simulates the substrate morphology after high-temperature ion implantation by digital means to verify whether the implantation scheme can meet the structural requirements of the final silicon carbide MOSFET. The morphology simulation can predict the final substrate morphology before actual implantation, identify potential preparation problems and technical risks in advance, optimize the preparation scheme, and ensure high-quality output in actual production.

[0080] More specifically, based on the effect characteristics of high-temperature ion implantation, the target preparation model is reversely simulated to analyze the implantation parameters and conditions required to achieve the target morphology. By adjusting the implantation depth, dose, ion energy and other parameters, the optimal implantation scheme is reversed. The reverse simulation optimizes the implantation scheme to accurately match the preparation target with the actual implantation conditions, improve implantation accuracy and uniformity, reduce errors in preparation, and ensure the compatibility and consistency of the substrate in subsequent device processing.

[0081] It can be understood that the entire step is based on the detailed collection and analysis of specifications and performance parameters, and an efficient high-temperature ion implantation scheme is established through digital simulation and reverse deduction. The final implantation scheme can accurately control the distribution of ions in the substrate, reduce the defect generation during the implantation process, and ensure that the substrate meets the design requirements of silicon carbide MOSFET. This scheme can significantly improve the conductivity, thermal stability and anti-breakdown characteristics of silicon carbide MOSFET, so that the device can have excellent stability and reliability under extreme conditions.

[0082] Preferably, the step of performing reverse simulation analysis of a preparation scheme on the substrate target preparation model according to the implantation effect simulation characteristics to obtain a high-temperature ion implantation scheme corresponding to the substrate target preparation model comprises:

[0083] S251: Setting a plurality of injection positions based on the substrate digital model;

[0084] S252: Simulating and analyzing the high-temperature ion implantation forms according to each of the implantation positions to obtain a set of high-temperature ion implantation forms for each of the implantation positions; wherein the set of high-temperature ion implantation forms includes a plurality of high-temperature ion implantation forms, and the high-temperature ion implantation forms include ion beam energy, ion dose, implantation direction angle, implantation depth, and implantation rate;

[0085] S253: performing effect simulation processing on the high-temperature ion implantation form set according to the implantation effect simulation characteristics to obtain form effect characteristics of each high-temperature ion implantation form;

[0086] S254: performing combination processing on each of the high temperature ion implantation forms of the high temperature ion implantation form set to obtain an implantation execution step consisting of several high temperature ion implantation forms, and performing corresponding combination processing according to effect characteristics of each of the forms to obtain overall effect characteristics of each of the implantation execution steps;

[0087] S255: taking all the overall effect features as the theoretical effect set of the injection position, analyzing and processing the constituent components of the substrate target preparation model according to each of the theoretical effect sets, and obtaining several component schemes corresponding to the substrate target preparation model; wherein the component schemes include the overall effect features selected from each of the theoretical effect sets;

[0088] S256: Perform feasibility evaluation on each of the component schemes to obtain feasibility parameters of each of the component schemes, and use the component scheme with the best feasibility parameters as the high-temperature ion implantation scheme.

[0089] Specifically, based on the digital model of the substrate, several key injection positions are divided. These positions usually include the channel area, source area, drain area, etc., according to the specific design requirements of the silicon carbide MOSFET to be prepared. Accurate division of the injection positions helps to carefully control each area of ​​the device during the ion implantation process, ensuring that the key areas of the device can achieve the expected physical and electrical properties.

[0090] More specifically, a different set of ion implantation forms is set for each implantation position, and each implantation form includes specific ion beam energy, ion dose, implantation direction angle, implantation depth and implantation rate. The influence of each implantation form on the substrate is simulated. By independently simulating and analyzing the implantation form at each position, suitable implantation parameters can be found for different positions to better control the ion distribution and doping concentration, thereby improving the uniformity and consistency of the device.

[0091] More specifically, based on the injection effect simulation characteristics, the effects of various injection forms are simulated, and the influence of different parameter combinations on material structure, doping concentration, defect distribution and other characteristics is analyzed to obtain the effect characteristics of each injection form. The effect characteristic simulation can predict the changes in the physical and electrical properties of the substrate after ion implantation, provide data support for subsequent combinations, and ensure that the final injection effect meets the design requirements of silicon carbide MOSFET.

[0092] More specifically, the injection form sets of each injection position are combined to obtain different injection execution steps. These steps are matched with each other according to the effect characteristics to ensure that the injection forms at different positions work together to achieve the best overall effect. By combining different injection forms, it is ensured that the optimal effect can be obtained at each injection position, avoiding performance loss caused by parameter mismatch, so that the final device has good conductivity and thermal stability.

[0093] More specifically, the overall effect characteristics produced by the combined injection execution steps are used as the theoretical effect set of each injection position, and these theoretical effect sets are subjected to component analysis. Theoretical effect set analysis can reveal the impact of different injection parameters on the overall substrate characteristics, provide theoretical support for the subsequent selection of the optimal solution, and help improve the accuracy and adaptability of the solution.

[0094] More specifically, based on the set of theoretical effects of each injection position, several component schemes are generated, each scheme includes the overall effect characteristics selected for each position, and the feasibility of each component scheme is evaluated, and its impact on the physical and electrical properties of the substrate is analyzed to obtain the feasibility parameters of each scheme. By evaluating the feasibility of each component scheme, the optimal parameter combination that meets the preparation goals can be found to ensure that the injection scheme is both technically feasible and can achieve the expected effect in practical applications.

[0095] More specifically, the component scheme with the best feasibility parameters is selected as the final high-temperature ion implantation scheme, and the optimal implantation form and execution steps for each implantation position are determined. The determination of the final scheme means that the optimal configuration is achieved in terms of ion dose, implantation depth, implantation angle, etc., thereby improving the performance and consistency of silicon carbide MOSFET and ensuring the high stability and reliability of the device in practical applications.

[0096] It is understandable that by setting the injection position, simulating different injection forms, combining the injection steps, analyzing the theoretical effect set and evaluating the feasibility of the component scheme, the high-temperature ion implantation scheme finally obtained can accurately control the doping concentration and ion distribution of the substrate so that each area meets the design requirements. During the device preparation process, this scheme effectively improves the electrical performance, heat dissipation capacity and high temperature resistance of silicon carbide MOSFET, giving it excellent performance and stability, thus meeting the strict requirements of high-performance electronic devices for material processes.

[0097] Preferably, the step of performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding the high-temperature ion implantation comprises:

[0098] S31: parsing the high temperature ion implantation scheme to obtain various implantation positions for implanting high temperature ions into the substrate to be prepared in the high temperature ion implantation scheme and implantation execution steps corresponding to the various implantation positions;

[0099] S32: performing a substrate impact analysis of the implantation process on the substrate to be prepared according to the implantation execution steps, and obtaining implantation impact characteristics of the substrate to be prepared corresponding to each of the implantation execution steps;

[0100] S33: performing a guiding countermeasure analysis on the injection influencing feature to obtain a nanostructure for guiding high-temperature ion injection in the injection execution step to offset the injection influencing feature.

[0101] Specifically, the predetermined high-temperature ion implantation scheme is analyzed in detail to clarify each implantation position on the substrate to be prepared and the corresponding implantation execution steps. These steps should contain specific parameters of ion implantation, including implantation energy, dose, angle, depth and rate. Through scheme analysis, the implantation conditions at different positions can be fully understood, laying the foundation for subsequent substrate impact analysis and nanostructure design, and ensuring the formation of an effective nano-guided structure on the substrate.

[0102] More specifically, based on the analyzed implantation execution steps, the physical changes of the substrate during the implantation process are analyzed, including possible influences such as structural deformation, stress concentration, doping distribution, and defect generation in the implantation area. The substrate impact analysis can predict the potential impact of high-temperature ion implantation on the substrate, reveal the diffusion behavior and thermal effect of ions in the substrate, and provide a reference for determining the functional requirements of the nanostructure, ensuring that the nanostructure design is targeted.

[0103] More specifically, based on the results of the substrate impact analysis, a guiding strategy is developed to guide the high-temperature ion implantation through a specific nanostructure. The guiding strategy is intended to offset the stress, thermal effects or other adverse effects generated during the implantation process. Specific strategies may include designing surface textures, setting up microporous structures, nanogrooves, etc., to change the local electric field or ion channels and optimize the implantation effect. Through the analysis of the guiding strategy, the design requirements of the nanostructure can be formulated in a targeted manner so that the nanostructure has good guiding properties, ensuring uniform distribution and effective diffusion of ions on the substrate, and reducing defects and damage that may occur during the implantation process.

[0104] More specifically, according to the requirements of the guiding strategy, the required nanostructure is prepared on the surface of the substrate to be prepared. The specific method may be to use electron beam etching, laser etching, chemical etching or other nano-processing technology to ensure that the nanostructure matches the injection position and step. The nanostructure set on the surface of the substrate can effectively guide high-temperature ion injection, optimize ion channels, reduce local stress concentration and thermal damage caused by injection, and improve the uniformity of injection and the overall performance of the substrate.

[0105] More specifically, actual high-temperature ion implantation is carried out under the guidance of the nanostructure. By dynamically monitoring and adjusting the implantation parameters, it is ensured that deviations in the implantation process can be corrected in real time. At the same time, the effect of the nanostructure in guiding the ion implantation is evaluated, and the nanostructure is fine-tuned when necessary to improve the guiding performance. With the assistance of the nanostructure, the high-temperature ion implantation process is more controllable, and the ion implantation depth, diffusion path and doping concentration can meet the expected standards, reducing structural defects and substrate damage.

[0106] More specifically, after the ion implantation is completed, the performance of the substrate and the nanostructure on its surface is evaluated to analyze the stability, guiding effect and influence of the nanostructure on the uniformity of ion implantation. At the same time, it is checked whether the implanted substrate meets the design requirements of the target preparation model. Subsequent evaluation can verify the actual effect of the nanostructure in guiding high-temperature ion implantation and ensure that the final implantation scheme can achieve the expected goal. Based on the evaluation results, the design of the nanostructure can be further optimized to provide a reference for the subsequent preparation scheme.

[0107] It is understandable that through the analysis of high-temperature ion implantation schemes, substrate impact analysis, guidance strategy analysis and nanostructure preparation settings, effective nano-guiding structures can be formed on the surface of the substrate to be prepared. These nanostructures can not only optimize the uniformity of ion implantation, but also effectively reduce the impact of stress and thermal effects on the substrate, improve the structural stability and electrical properties of the substrate, and make it more in line with the preparation requirements of high-performance devices such as silicon carbide MOSFET.

[0108] Preferably, the step of heating the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme comprises:

[0109] S41: performing a heating process on the substrate to be prepared so that the substrate to be prepared is in a working state;

[0110] S42: parsing the high temperature ion implantation scheme to obtain various implantation positions for implanting high temperature ions into the substrate to be prepared in the high temperature ion implantation scheme and implantation execution steps corresponding to the various implantation positions;

[0111] S43: analyzing the execution order of each of the injection execution steps to obtain the execution order mark of each of the injection execution steps;

[0112] S44: according to the execution order marks of the respective injection execution steps, the injection execution steps are sequentially executed on the corresponding injection positions on the substrate to be prepared in the working state.

[0113] Specifically, the substrate to be prepared is heated to ensure that the substrate reaches a predetermined operating temperature and is in a suitable working state. This temperature is usually set to a high temperature range that the substrate material can withstand to facilitate effective ion implantation. The heating treatment enhances the activity of the substrate material, helps the diffusion of ions in the substrate and the uniform distribution of doping concentration. At the same time, high temperature can reduce defect generation during the implantation process and enhance the stability of the substrate after implantation.

[0114] More specifically, the high-temperature ion implantation scheme is analyzed in detail to clarify each implantation position and the corresponding implantation parameters, including energy, dosage, angle, etc., and the implantation steps at different positions are determined so that the high-temperature ion implantation can be completed in steps. The scheme analysis provides an accurate parameter basis for the implantation process, making subsequent implantation operations more targeted, improving the accuracy of the implantation position, and ensuring the implantation effect in each area.

[0115] More specifically, the analyzed implantation steps are analyzed to determine the best execution order of the implantation. By marking the execution order, each implantation step is numbered to reasonably arrange the implantation path and time of the ions. A reasonable execution order helps to optimize the efficiency of the implantation process, prevent uneven implantation caused by improper order or affect the ion concentration distribution at adjacent positions, which can reduce thermal interference and improve the overall uniformity of the implantation.

[0116] More specifically, ion implantation is performed sequentially on the heated substrate according to the execution sequence mark. The nanostructure guides the ion implantation by controlling the ion path to reduce deviation and local defect generation during the implantation process. The guiding effect of the nanostructure optimizes the ion distribution path and improves the uniformity of the implantation. At the same time, the implanted ions diffuse more evenly in the substrate, thereby improving the performance of the substrate and reducing the risk of stress concentration.

[0117] More specifically, the ion implantation steps for each implantation position are completed step by step according to the marking sequence, and the ion concentration and implantation depth are monitored in real time during the implantation process to ensure the accuracy of each step. The step-by-step implantation execution ensures that each position is carried out in sequence, so that the ions reach the expected concentration and depth at each position, preventing interference between implantation positions and improving the consistency of the overall implantation.

[0118] It is understandable that the above steps optimize the implantation effect by heating the substrate to a working state and performing orderly high-temperature ion implantation based on nanostructure guidance to make the ion concentration distribution at each implantation position uniform. The nanostructure and orderly execution steps further improve the accuracy of the implantation, reduce the occurrence of structural defects and stress concentration of the substrate, and ultimately improve the physical and electrical properties of the substrate, making it more in line with the expected preparation requirements.

[0119] Preferably, real-time data collection is performed on the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, the high-temperature ion implantation effect characteristics are analyzed, and parameters of subsequent high-temperature ion implantation are adjusted according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET, the step includes:

[0120] S51: when the implantation execution step is performed on the implantation position of the substrate to be prepared, obtaining equipment working information of a high-temperature ion implantation equipment that performs high-temperature ion implantation on the substrate to be prepared as a first effect feature of the implantation execution step;

[0121] S52: performing multi-dimensional data acquisition on the substrate to be prepared that receives high-temperature ion implantation through a preset sensor group, obtaining various monitoring parameters of the substrate to be prepared during the process of receiving high-temperature ion implantation, and using the various monitoring parameters together as the second effect feature of the implantation execution step; wherein the sensor group includes an infrared temperature sensor, a charge sensor, and a photoelectric spectrum sensor;

[0122] S53: combining the first effect characteristic and the second effect characteristic to obtain a high temperature ion implantation effect characteristic of the implantation execution step;

[0123] S54: performing effect analysis processing on the high temperature ion implantation effect characteristics according to a preset standard to obtain effect deviation characteristics of the implantation execution step;

[0124] S55: adjusting parameters of the subsequent implantation execution step based on the effect deviation characteristics, and performing high-temperature ion implantation on the substrate to be prepared according to the implantation execution step after the parameter adjustment;

[0125] S56: Repeat the above steps until the substrate to be prepared is subjected to high-temperature ion implantation corresponding to each of the implantation execution steps through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET.

[0126] Specifically, when performing the high-temperature ion implantation step, the working information of the ion implantation equipment is obtained, such as the injection voltage, current, power, ion dose, ion beam energy, etc. These data can be collected in real time through the built-in monitoring system of the equipment. As the first effect feature of the implantation step, real-time acquisition of equipment working information helps to ensure that the equipment parameters during the implantation process remain within the preset stable range. Any fluctuations in equipment parameters may affect the implantation effect. Therefore, the implantation stability can be effectively guaranteed through equipment information monitoring.

[0127] More specifically, a preset sensor group is used to monitor the to-be-prepared substrate receiving high-temperature ion implantation in real time. The sensor group includes an infrared temperature sensor, a charge sensor, a photoelectric spectrum sensor, etc., which are used to collect multidimensional data such as the temperature, charge distribution, and energy absorption of the substrate during the implantation process. These data, as the second effect characteristic, reflect the real-time physical state of the substrate when receiving the ion implantation. The data collected by the multidimensional sensor can comprehensively reflect the reaction of the substrate during the ion implantation process, including the temperature rise, charge accumulation, and energy absorption. By real-time monitoring of these data, the dynamic changes of the substrate at different implantation stages can be captured to ensure that the substrate is not adversely affected by excessive thermal effects or charge accumulation.

[0128] More specifically, the working information of the ion implantation equipment (first effect characteristic) is combined with the multi-dimensional monitoring data of the substrate (second effect characteristic) to obtain a complete high-temperature ion implantation effect characteristic. These combined data can provide a comprehensive implantation status analysis, including the linkage between the equipment and the substrate. By combining the real-time data of the equipment and the substrate, the high-temperature ion implantation effect can be analyzed more accurately and the subtle differences in the implantation process can be revealed. For example, by analyzing the corresponding relationship between the equipment power change and the substrate temperature, the implantation parameters can be better adjusted.

[0129] More specifically, according to the preset effect standard, the injection effect characteristics are analyzed, and the actual collected data is compared with the preset target value to obtain the effect deviation characteristics during the injection process. These deviations may include excessive temperature, injection depth deviation, or uneven ion distribution. The effect analysis can quickly identify the deviation characteristics in the injection process, thereby providing a basis for correction for subsequent injection steps. Deviation analysis makes the injection process more controllable and reduces the occurrence of non-standard situations.

[0130] More specifically, according to the deviation characteristics, the parameters of the subsequent implantation steps are adjusted in real time. The adjusted parameters may include ion implantation energy, implantation dose, implantation angle, and implantation duration. The adjusted parameters will be used for the next implantation execution step to ensure that it is more in line with the expected effect. By dynamically adjusting the parameters, the deviations that occur during the implantation process can be gradually corrected to ensure that the effect of each implantation is continuously optimized. The adjustment process is fed back to the linkage system between the equipment and the substrate to ensure that the equipment parameters match the substrate status.

[0131] More specifically, the above steps are repeated to perform high-temperature ion implantation at each implantation position, and the implantation parameters are gradually adjusted until the ion implantation at all positions achieves the desired effect. In this process, the ion implantation path and distribution can be further optimized through the guidance of the nanostructure. Through iterative execution and parameter optimization, a silicon carbide MOSFET intermediate state substrate with uniform ion distribution and precise structure is finally formed. This method ensures the accuracy of each step in the implantation process and reduces the probability of defects.

[0132] It can be understood that the above method combines the equipment information and multi-dimensional data of substrate response during high-temperature ion implantation, continuously optimizes the implantation effect through real-time analysis and adjustment, and finally realizes a high-precision, high-quality silicon carbide MOSFET intermediate state substrate. This process can greatly improve the uniformity and injection effect of the substrate, and reduce the adverse effects caused by temperature or charge accumulation, ensuring that the prepared substrate has stable performance and meets the design requirements.

[0133] Preferably, the step of performing effect analysis processing on the high temperature ion implantation effect characteristics according to a preset standard to obtain the effect deviation characteristics of the implantation execution step comprises:

[0134] S541: taking the overall effect characteristics corresponding to each of the injection execution steps as a preset standard;

[0135] S542: performing feedback analysis processing on the substrate condition of the substrate to be prepared according to the high-temperature ion implantation effect characteristic, and obtaining a substrate condition distribution characteristic of the substrate to be prepared corresponding to the high-temperature ion implantation effect characteristic;

[0136] S543: Compare and process the substrate condition distribution characteristics according to the preset standard to obtain the effect deviation characteristics of the implantation execution step.

[0137] Specifically, before the implantation operation, preset standards are defined. These standards are based on the overall effect characteristics of each implantation step, covering key parameters such as implantation energy, ion dose, temperature, charge distribution, and implantation depth. These standards serve as reference indicators for each subsequent implantation operation to ensure that each step meets the expected requirements. By setting preset standards, a clear benchmark is provided for subsequent effect analysis, so that the effect of each implantation step can be directly compared with the ideal state. This helps to quickly discover deviations and make timely adjustments.

[0138] More specifically, based on the collected high-temperature ion implantation effect characteristics, the status of the substrate to be prepared is analyzed in real time. The specific operations include: evaluating the temperature change of the substrate, detecting whether it is in a reasonable operating temperature range, analyzing the charge distribution of the substrate, judging the diffusion uniformity of ions inside the substrate, and evaluating energy absorption through the photoelectric spectrum sensor to ensure that the ion implantation depth and energy meet the preset requirements; the substrate status feedback analysis can timely capture abnormal conditions of the substrate during the implantation process, such as overheating, local charge accumulation or insufficient energy, etc. This analysis provides real-time feedback on the actual status of the substrate, ensuring that subsequent adjustments can be optimized for the problem.

[0139] More specifically, by processing the feedback data, the substrate condition distribution characteristics are obtained, including: temperature distribution in different regions of the substrate; charge and energy absorption at each injection point; uniformity of injection depth and ion concentration distribution.

[0140] It can be seen that the substrate condition distribution characteristics provide detailed spatial distribution information for the status of each injection area, which can reflect whether the injection effect is uniform in each area and provide accurate data information for subsequent processing.

[0141] More specifically, the actual distribution characteristics of the substrate are compared with the preset standards to find out the differences between each execution step and the standards, and analyze whether each parameter deviates from the preset value. The comparison includes: whether the temperature of each area exceeds or falls below the preset standard; whether the charge distribution and energy absorption are uniform and meet the standard requirements; and whether the ion implantation depth and distribution meet the preset concentration range.

[0142] Through this comparative analysis, we can quickly find the problem areas in the implantation process, such as excessive temperature in some areas or uneven ion implantation. This method provides clear guidance for subsequent parameter adjustments.

[0143] More specifically, through comparative analysis, the effect deviation characteristics of the implant execution step are obtained. Deviation characteristics refer to the deviation of various parameters from the preset standards, including: temperature deviation: the temperature of a certain area of ​​the substrate may be too high or too low; implantation depth deviation: the ion implantation depth at certain locations is insufficient or too deep; charge distribution deviation: the uneven charge distribution on the substrate surface after implantation may lead to performance degradation; the effect deviation characteristics provide detailed deviation information, so that the problem can be identified, so that precise corrections and parameter adjustments can be made in subsequent operations to ensure that the effect of the entire implantation process meets the design requirements.

[0144] It is understandable that the above steps can effectively detect deviations in the high-temperature ion implantation process by setting preset standards, providing real-time feedback on substrate conditions, analyzing condition distribution characteristics, and comparing these characteristics with preset standards. By identifying and analyzing these deviation characteristics, it is possible to provide an adjustment basis for subsequent ion implantation steps, gradually reduce deviations, and ensure that a silicon carbide MOSFET intermediate state substrate that meets the requirements is finally obtained. This analysis and processing method not only improves the accuracy and uniformity of the implantation process, but also improves the overall performance and reliability of the substrate.

[0145] Reference Figure 2 As shown, in a second aspect, the present invention provides a silicon carbide MOSFET high temperature ion implantation device, which is used to implement a silicon carbide MOSFET high temperature ion implantation method as described in any one of the first aspects, comprising:

[0146] A pre-processing module, used for pre-processing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

[0147] A scheme analysis module, used to obtain specification parameters and performance parameters of the substrate to be prepared, and analyze the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, so as to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

[0148] A surface treatment module, used for performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme, to obtain a plurality of nanostructures arranged on the surface of the substrate to be prepared for guiding the high-temperature ion implantation;

[0149] a step execution module, configured to heat the substrate to be prepared so that the substrate to be prepared is in a working state, and perform high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

[0150] A step adjustment module is used to collect real-time data on the high-temperature ion implantation effect of the substrate to be prepared, obtain high-temperature ion implantation effect characteristics, analyze the high-temperature ion implantation effect characteristics, and adjust parameters for subsequent high-temperature ion implantation according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

[0151] In this embodiment, for the specific implementation of each module in the above-mentioned device embodiment, please refer to the above-mentioned method embodiment, which will not be described in detail here.

[0152] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A high temperature ion implantation method for silicon carbide MOSFET, characterized in that: include: Pre-treating a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared; Acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared; Performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding the high-temperature ion implantation; Performing a heating treatment on the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme; Real-time data collection is performed on the high-temperature ion implantation effect of the substrate to be prepared to obtain the high-temperature ion implantation effect characteristics, the high-temperature ion implantation effect characteristics are analyzed, and the parameters of subsequent high-temperature ion implantation are adjusted according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET; The step of performing a nanostructure preparation process on the substrate to be prepared according to the high temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding the high temperature ion implantation comprises: The high temperature ion implantation scheme is analyzed to obtain various implantation positions for implanting high temperature ions into the substrate to be prepared and implantation execution steps corresponding to the various implantation positions in the high temperature ion implantation scheme; Performing a substrate impact analysis of the injection process on the substrate to be prepared according to the injection execution steps to obtain injection impact characteristics of the substrate to be prepared corresponding to each of the injection execution steps; Performing a guiding countermeasure analysis on the implantation influencing feature to obtain a nanostructure for guiding high temperature ion implantation in the implantation execution step to offset the implantation influencing feature; The step of performing high temperature ion implantation on the substrate to be prepared in a working state through the nanostructure according to the high temperature ion implantation scheme includes: The high temperature ion implantation scheme is analyzed to obtain various implantation positions for implanting high temperature ions into the substrate to be prepared and implantation execution steps corresponding to the various implantation positions in the high temperature ion implantation scheme; Analyzing the execution order of each of the injection execution steps to obtain the execution order mark of each of the injection execution steps; According to the execution order marks of the respective implantation execution steps, the implantation execution steps are sequentially executed on the corresponding implantation positions on the substrate to be prepared in the working state.

2. The high temperature ion implantation method for silicon carbide MOSFET according to claim 1, characterized in that: The step of pretreating a substrate for preparing a silicon carbide MOSFET to obtain the substrate to be prepared comprises: Surface cleaning and polishing of substrates used to prepare silicon carbide MOSFETs; The substrate that has been surface cleaned and polished is subjected to surface oxidation treatment or surface passivation treatment to obtain the substrate to be prepared.

3. The high temperature ion implantation method for silicon carbide MOSFET according to claim 1, characterized in that: The steps of obtaining the specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, and obtaining the high-temperature ion implantation scheme of the substrate to be prepared include: Collecting data on specification parameters and performance parameters of the substrate to be prepared to obtain specification parameters and performance parameters of the substrate to be prepared; Performing digital simulation processing on the substrate to be prepared according to the specification parameters of the substrate to be prepared, so as to obtain a substrate digital model used for performing digital simulation feedback on the substrate to be prepared; Performing effect simulation processing on high temperature ion implantation according to the performance parameters of the substrate to be prepared to obtain implantation effect simulation characteristics; Acquire target preparation morphological parameters of the silicon carbide MOSFET, and perform morphological simulation on the target preparation morphological parameters based on the substrate digital model to obtain a substrate target preparation model; According to the implantation effect simulation characteristics, a reverse simulation analysis of the preparation scheme of the substrate target preparation model is performed to obtain a high-temperature ion implantation scheme corresponding to the substrate target preparation model.

4. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 3, characterized in that: The steps of performing reverse simulation analysis on the substrate target preparation model according to the implantation effect simulation characteristics to obtain a high-temperature ion implantation scheme corresponding to the substrate target preparation model include: Setting a plurality of implantation positions based on the digital model of the substrate; Simulating and analyzing the high-temperature ion implantation forms according to each of the implantation positions to obtain a set of high-temperature ion implantation forms for each of the implantation positions; wherein the set of high-temperature ion implantation forms includes a plurality of high-temperature ion implantation forms, and the high-temperature ion implantation forms include ion beam energy, ion dose, implantation direction angle, implantation depth, and implantation rate; According to the implantation effect simulation characteristics, the high temperature ion implantation form set is subjected to effect simulation processing to obtain form effect characteristics of each of the high temperature ion implantation forms; Combining and processing each of the high-temperature ion implantation forms of the high-temperature ion implantation form set to obtain an implantation execution step consisting of several high-temperature ion implantation forms, and performing corresponding combination processing according to the effect characteristics of each of the forms to obtain the overall effect characteristics of each of the implantation execution steps; Taking the overall effect features as the theoretical effect set of the injection position, analyzing and processing the constituent components of the substrate target preparation model according to the theoretical effect sets, and obtaining several component schemes corresponding to the substrate target preparation model; wherein the component schemes include the overall effect features selected from the theoretical effect sets; The feasibility of each component scheme is evaluated to obtain feasibility parameters of each component scheme, and the component scheme with the best feasibility parameters is used as the high-temperature ion implantation scheme.

5. The high temperature ion implantation method for silicon carbide MOSFET according to claim 4, characterized in that: The steps of collecting real-time data on the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, analyzing the high-temperature ion implantation effect characteristics, and adjusting parameters for subsequent high-temperature ion implantation according to the analysis results until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of a silicon carbide MOSFET include: When the implantation execution step is performed on the implantation position of the substrate to be prepared, equipment operation information of a high-temperature ion implantation equipment that performs high-temperature ion implantation on the substrate to be prepared is obtained as a first effect feature of the implantation execution step; The substrate to be prepared that receives high-temperature ion implantation is subjected to multi-dimensional data acquisition through a preset sensor group, and various monitoring parameters of the substrate to be prepared during the process of receiving high-temperature ion implantation are obtained, and various monitoring parameters are used together as the second effect characteristics of the implantation execution step; wherein the sensor group includes an infrared temperature sensor, a charge sensor, and a photoelectric spectrum sensor; Combining the first effect characteristic with the second effect characteristic to obtain a high temperature ion implantation effect characteristic of the implantation execution step; Performing effect analysis on the high temperature ion implantation effect characteristics according to a preset standard to obtain effect deviation characteristics of the implantation execution step; Adjusting parameters of the subsequent implantation execution step based on the effect deviation characteristics, and performing high-temperature ion implantation on the substrate to be prepared according to the implantation execution step after the parameter adjustment; The above steps are repeatedly performed until the substrate to be prepared is subjected to high-temperature ion implantation corresponding to each of the implantation execution steps through each of the nanostructures, thereby obtaining an intermediate state substrate of a silicon carbide MOSFET.

6. The high temperature ion implantation method for silicon carbide MOSFET according to claim 5, characterized in that: The step of performing effect analysis processing on the high temperature ion implantation effect characteristics according to a preset standard to obtain the effect deviation characteristics of the implantation execution step comprises: Using the overall effect characteristics corresponding to each of the injection execution steps as a preset standard; performing feedback analysis processing on the substrate condition of the substrate to be prepared according to the high-temperature ion implantation effect characteristics to obtain a substrate condition distribution characteristic of the substrate to be prepared corresponding to the high-temperature ion implantation effect characteristics; The substrate condition distribution characteristics are compared and processed according to the preset standard to obtain the effect deviation characteristics of the implantation execution step.

7. A silicon carbide MOSFET high temperature ion implantation device, characterized in that: A method for high temperature ion implantation of a silicon carbide MOSFET for implementing any one of claims 1 to 6, comprising: A pre-processing module, used for pre-processing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared; A scheme analysis module, used to obtain specification parameters and performance parameters of the substrate to be prepared, and analyze the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, so as to obtain the high-temperature ion implantation scheme of the substrate to be prepared; A surface treatment module, used for performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme, to obtain a plurality of nanostructures arranged on the surface of the substrate to be prepared for guiding the high-temperature ion implantation; a step execution module, configured to heat the substrate to be prepared so that the substrate to be prepared is in a working state, and perform high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme; A step adjustment module is used to collect real-time data on the high-temperature ion implantation effect of the substrate to be prepared, obtain high-temperature ion implantation effect characteristics, analyze the high-temperature ion implantation effect characteristics, and adjust parameters for subsequent high-temperature ion implantation according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

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