Method, device and system for measuring wafer curvature radius

Abstract

The present invention discloses a method, device and system for measuring the curvature radius of a wafer, comprising: obtaining the support type of a wafer to be measured; determining the distribution of the flexural deformation of the wafer to be measured according to the support type; determining the curvature radius of the wafer to be measured according to the flexural deformation distribution; wherein the support type includes single-circle continuous support or three-point support. The method for measuring the curvature radius of a wafer provided by the present invention can measure the curvature radius of a wafer supported by a single-circle continuous support or a three-point support, thereby calculating the compensated curvature radius of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method, device and system for measuring the curvature radius of a wafer. Background Art

[0002] In each link of wafer front-end measurement, it is often necessary to detect wafer thin film stress to check whether the diffusion and coating processes are qualified. Currently, the most commonly used method for detecting thin film stress is the laser curvature method. By detecting the curvature radius of the wafer before and after coating placed on the carrier, the wafer thin film stress is calculated using Stoney's formula.

[0003] The mainstream method of supporting the wafer by the wafer stage is three-point support or single-circle continuous support. However, since the diameter-to-thickness ratio of the wafer is generally not less than 100 and it is an elastic thin plate structure, the wafer surface shape will change significantly under the above support conditions. In the measurement scenario of high-precision wafer curvature radius, the change of wafer surface shape caused by support cannot be ignored. Summary of the invention

[0004] The present invention provides a method, device and system for measuring the curvature radius of a wafer. By measuring the curvature radius of a wafer under different supporting conditions, especially single-circle continuous support and three-point support, the curvature radius of the wafer in a free state can be calculated.

[0005] According to a first aspect of the present invention, a method for measuring a wafer curvature radius is provided, comprising:

[0006] Get the support type of the wafer to be tested;

[0007] Determining the distribution of the flexural deformation of the wafer to be tested according to the support type;

[0008] The curvature radius of the wafer to be tested is determined according to the flexural deformation distribution; wherein the support type includes single-circle continuous support or three-point support.

[0009] Optionally, obtaining the support type of the wafer to be tested includes:

[0010] Acquiring a support structure of the wafer to be tested;

[0011] The support type of the wafer to be tested is determined according to the support structure.

[0012] Optionally, determining the flexural deformation distribution of the wafer to be tested according to the support type includes:

[0013] When the support type is single-circle continuous support, the deflection of the wafer to be tested is determined based on a first preset rule;

[0014] When the support type is three-point support, the deflection of the wafer to be tested is determined based on a second preset rule.

[0015] When the support type is single-circle continuous support, determining the deflection of the wafer to be tested based on a first preset rule includes:

[0016] The deflection of the wafer under test under single-circle continuous support is calculated by equations (1), (2) and (3):

[0017]

[0018] q=ρgh (2)

[0019]

[0020] Among them, y i is the deflection of the wafer to be tested under single-circuit continuous support, q is the load strength of the wafer to be tested under its own weight, ρ is the density of the wafer to be tested, g is the gravitational acceleration, h is the thickness of the wafer to be tested; R is the outer diameter of the wafer to be tested, K is the bending stiffness of the wafer to be tested, E is the elastic modulus of the wafer to be tested, υ is the Poisson's ratio of the wafer to be tested, and Y i is the normalized deflection of the wafer to be measured at the ith measurement position under a single-turn continuous support, dimensionless.

[0021] Optionally, the support radius of the wafer to be tested and the distribution radius of the wafer to be tested are normalized based on formula (4):

[0022]

[0023] Wherein, a is the normalized support radius of the wafer to be tested, and x is the normalized distribution radius of the wafer to be tested;

[0024] The normalized deflection is determined according to the normalized support radius and the normalized distribution radius, and the normalized deflection is calculated by formula (5):

[0025]

[0026] Wherein, υ is the Poisson's ratio of the wafer to be tested.

[0027] When the support type is three-point support, determining the deflection of the wafer to be tested based on a second preset rule includes:

[0028] The deflection is calculated by formula (6):

[0029] Y i ′=Y i +Y ∑i(6)

[0030]

[0031] Among them, Y i ′ is the deflection of the wafer under test under three-point support, Y i is the normalized deflection of the wafer under test at the ith measurement position under three-point support, dimensionless, θ is the azimuth angle of any deformation point of the wafer under test,

[0032]

[0033] Optionally, the azimuth angle of the wafer to be tested is 0.

[0034] Determining the curvature radius of the wafer to be tested according to the flexible deformation distribution includes:

[0035] The wafer to be tested is compensated according to the distribution of the flexural deformation, and the curvature radius of the wafer to be tested is calculated by formula (9):

[0036] Δy i =Δy i ′+y i (9)

[0037] Among them, y i is the deflection of the wafer under test when it is supported continuously in a single circle or when it is supported at three points, Δy i is the radius of curvature of the wafer to be tested after flexible deformation after single-circle continuous support or the radius of curvature of the wafer to be tested after flexible deformation after three-point support, Δy i ' is the curvature radius of the wafer to be tested.

[0038] According to a second aspect of the present invention, a device for measuring the curvature radius of a wafer is provided, the device being used to perform the method for measuring the curvature radius of a wafer as described in any one of the first aspects of the present invention, the device comprising:

[0039] An acquisition module, used to acquire the support type of the wafer to be tested;

[0040] A calculation module, for determining the distribution of the flexural deformation of the wafer to be tested according to the support type;

[0041] A calculation module determines the curvature radius of the wafer to be tested according to the flexible deformation distribution; wherein the support type includes single-circle continuous support or three-point support.

[0042] According to a third aspect of the present invention, a system for measuring the curvature radius of a wafer is provided, comprising a wafer to be measured and the device for measuring the curvature radius of a wafer according to the second aspect of the present invention.

[0043] The present invention discloses a method, device and system for measuring the curvature radius of a wafer, comprising: obtaining the support type of a wafer to be measured; determining the flexural deformation distribution of the wafer to be measured according to the support type; determining the curvature radius of the wafer to be measured according to the flexural deformation distribution; wherein the support type includes single-loop continuous support or three-point support. The present invention provides a method, device and system for measuring the curvature radius of a wafer, which can calculate the curvature radius of a wafer in a free state by measuring the curvature radius of a wafer under different support conditions, especially single-loop continuous support and three-point support.

[0044] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0046] Figure 1 It is a flow chart of a method for measuring the curvature radius of a wafer provided by an embodiment of the present invention;

[0047] Figure 2 is a flow chart of a method for measuring a wafer curvature radius according to a first alternative embodiment provided by an embodiment of the present invention;

[0048] Figure 3 is a flow chart of a method for measuring a wafer curvature radius according to a second alternative embodiment provided by an embodiment of the present invention;

[0049] Figure 4 is a distribution diagram of the flexural deformation of the wafer under the condition of single-circle continuous support in an embodiment of the present invention;

[0050] Figure 5 is a simulation diagram of the flexural deformation distribution of the wafer under the condition of single-circle continuous support in an embodiment of the present invention;

[0051] Figure 6 is a distribution diagram of the flexural deformation of the wafer under three-point support in an embodiment of the present invention;

[0052] Figure 7 is a simulation diagram of the flexural deformation distribution of the wafer under three-point support in an embodiment of the present invention;

[0053] Figure 8It is a block diagram of a device for measuring the curvature radius of a wafer provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0054] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0055] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0056] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0057] In each link of wafer front-end measurement, single-loop continuous support or three-point support is usually selected. The so-called single-loop continuous support refers to the use of a continuous, closed-loop support structure to maintain the position and stability of the wafer to be measured; the so-called three-point support refers to the method of using three independent fulcrums to support the wafer. These three fulcrums are usually located at the edge of the wafer, forming a regular triangle configuration, so as to use the stability principle of the regular triangle to maintain the balance and stability of the wafer. Whether it is three-point support or single-loop continuous support, generally speaking, the ratio of the span of the support point to the thickness of the wafer is much greater than 10 times. According to the theory of elastic mechanics, the wafer under this support condition is perfectly suitable for the circular plate theory. According to the circular plate theory, the flexural deformation of the circular plate with continuous support has a direct elastic mechanics analytical solution; for the case of multi-point support, there is also an infinite series solution, which can be approximated by a numerical algorithm. The exact solution. Therefore, when detecting the radius of curvature of the wafer, the flexural deformation caused by the support is accurately compensated, and the precise measurement of the radius of curvature of the wafer can be achieved. This compensation method is applicable to all wafer curvature radius measurement methods (such as laser curvature method, diffraction method, Newton ring method, scattered point fitting method, etc.). The following takes the scattered point fitting method as an example to explain the compensation method of flexural deformation in detail.

[0058] Figure 1 is a flow chart of a method for measuring the curvature radius of a wafer provided by an embodiment of the present invention, with reference to Figure 1 , an embodiment of the present invention provides a method for measuring a wafer curvature radius, comprising:

[0059] S1. Obtain the support type of the wafer to be tested.

[0060] Among them, the wafer is the silicon chip used to manufacture semiconductor circuits, and its raw material is silicon.

[0061] Specifically, the support type of the wafer is obtained and determined, that is, it is determined whether the support method for the wafer is single-circle continuous support or three-point support.

[0062] S2. Determine the flexural deformation distribution of the wafer to be tested according to the support type.

[0063] Among them, the flexible deformation distribution refers to the irreversible change in the shape of the wafer after it is subjected to external force, and this change will not automatically return to the original state after the external force disappears.

[0064] Specifically, the distribution of the flexural deformation of the wafer to be tested is determined according to the supporting method of the wafer (ie, single-circle continuous support or three-point support).

[0065] S3. Determine the curvature radius of the wafer to be tested according to the distribution of the flexible deformation.

[0066] According to different supporting methods, different flexural deformation distributions of the wafer are determined, and according to different flexural deformation distributions, the curvature radius of the wafer to be tested is determined. The specific calculation method of the wafer curvature radius will be described in detail below.

[0067] The wafer curvature radius measurement method provided in the embodiment of the present invention determines the support type of the wafer, determines the flexible deformation distribution of the wafer according to different support conditions, and can calculate the curvature radius of the wafer in a free state based on different flexible deformation distributions.

[0068] On the basis of the above-mentioned embodiment, the embodiment of the present invention further refines the support type of the wafer to be tested. Figure 2 is a flow chart of a method for measuring the curvature radius of a wafer according to a first alternative embodiment of the present invention; Figure 2 As shown: The method for measuring the curvature radius of a wafer of the present application comprises the following steps:

[0069] S21. Obtain a support structure of the wafer to be tested.

[0070] Specifically, if the support structure of the wafer is a continuous, closed-loop circle structure, it can be determined that the support method of the wafer to be tested is single-loop continuous support; if the support structure of the wafer supports the edge position of the wafer with three independent fulcrums, forming an equilateral triangle structure as a whole, it can be determined that the support method of the wafer to be tested is three-point support.

[0071] S22. Determine the support type of the wafer to be tested according to the support structure.

[0072] Specifically, the support type of the wafer to be tested is determined according to different support structures, that is, a continuous, closed-loop circle structure or an equilateral triangle structure.

[0073] S23. Determine the flexural deformation distribution of the wafer to be tested according to the support type.

[0074] S24, determining the curvature radius of the wafer to be tested according to the flexible deformation distribution.

[0075] On the basis of the above-mentioned embodiment, the embodiment of the present invention further refines the determination of the flexural deformation distribution of the wafer to be tested according to the support type. Figure 3 is a flow chart of a method for measuring the curvature radius of a wafer according to a second alternative embodiment of the present invention, with reference to Figure 3 As shown: The method for measuring the curvature radius of a wafer of the present application comprises the following steps:

[0076] S31. Obtain the support type of the wafer to be tested.

[0077] S32. Determine the deflection of the wafer to be tested according to the support type of the wafer to be tested.

[0078] If the support type is single-circle continuous support, execute step S3201; if the support type is three-point support, execute step S3202.

[0079] S3201. When the support type is single-circle continuous support, the deflection of the wafer to be tested is determined based on a first preset rule.

[0080] Among them, the deflection refers to the deformation of the surface or interior of the wafer to be tested when the wafer to be tested is supported by a single-circle continuous support structure due to the external force applied to the wafer to be tested by the single-circle continuous support structure.

[0081] Specifically, when the support type is single-circle continuous support, the deflection of the wafer to be tested is calculated based on the first preset rule.

[0082] Optionally, when the support type is single-turn continuous support, the deflection of the wafer to be tested is determined based on the first preset rule, including: the deflection of the wafer to be tested under the single-turn continuous support is calculated by formulas (1), (2) and (3):

[0083]

[0084] q=ρgh (2)

[0085]

[0086] Among them, y i is the deflection of the wafer to be tested under single-circuit continuous support, q is the load strength of the wafer to be tested under its own weight, ρ is the density of the wafer to be tested, g is the acceleration of gravity, and h is the thickness of the wafer to be tested; R is the outer diameter of the wafer to be tested, K is the bending stiffness of the wafer to be tested, E is the elastic modulus of the wafer to be tested, v is the Poisson's ratio of the wafer to be tested, and Y i is the normalized deflection of the wafer under test at the ith measurement position under a single-turn continuous support, dimensionless.

[0087] From the above, we can see that all the parameters of the wafer to be tested in formula (2) and formula (3) can be obtained by direct measurement, so we only need to calculate the normalized deflection Y at any point on the wafer to be tested: i , the deflection y of any point on the wafer to be tested can be calculated i .

[0088] Optionally, the support radius of the wafer to be measured and the distribution radius of the wafer to be measured are normalized based on formula (4):

[0089]

[0090] Wherein, a is the normalized support radius of the wafer to be tested, and x is the normalized distribution radius of the wafer to be tested;

[0091] The normalized deflection is determined according to the normalized support radius and the normalized distribution radius. The normalized deflection is calculated by formula (5):

[0092]

[0093] Where v is the Poisson’s ratio of the wafer to be tested.

[0094] Specifically, the normalized deflection of any point on the wafer to be tested can be obtained by using formulas (4) and (5), and then substituted into formula (1) to obtain the deflection y of the wafer to be tested: i .

[0095] From the above formula, it can be seen that the flexural deformation of the wafer under the single-turn continuous support has rotational symmetry. Therefore, when compensating for the flexural deformation of the wafer under the single-turn continuous support, there is no need to care about the azimuth angle of the wafer.

[0096] Illustratively, Table 1 is a table of wafer parameters to be tested according to an embodiment of the present invention.

[0097]

[0098] Table 1

[0099] Taking a 12-inch wafer as an example, the material is single crystal silicon, and the wafer parameters are shown in Table 1, unit system: SI.

[0100] Figure 4 is a distribution diagram of the flexural deformation of the wafer under the condition of single-circle continuous support in an embodiment of the present invention, with reference to Figure 4 , using the above formula, the surface flexural deformation distribution of the wafer under test is obtained when the support radius a is 0.67. Figure 4 shown.

[0101] Among them, the maximum deformation of the wafer to be tested is located at the outer edge of the wafer, and the flexible deformation distribution is -7.128μm.

[0102] Figure 5 is a simulation diagram of the flexural deformation distribution of the wafer under the condition of single-circle continuous support in an embodiment of the present invention, with reference to Figure 5 The maximum deformation of the wafer is also located at the outer edge of the wafer, and the flexible deformation distribution is -7.155μm, which deviates from the theoretical calculation result by 0.38%, which is in good agreement.

[0103] The single-circle continuous support method provided in the above-mentioned embodiment of the invention is mainly aimed at convex wafers, and can also be used for convex wafers with a certain degree of warpage.

[0104] S3202: When the support type is three-point support, the deflection of the wafer to be tested is determined based on a second preset rule.

[0105] The deflection refers to the deformation of the surface or interior of the wafer to be tested caused by the external force applied to the wafer by the three-point support structure when the wafer to be tested is supported by the three-point support structure.

[0106] Specifically, when the support type is three-point support, the deflection of the wafer to be tested is calculated based on the second preset rule.

[0107] The following embodiment of the invention describes the three-point support method in detail.

[0108] Optionally, when the support type is three-point support, the deflection of the wafer to be tested is determined based on a second preset rule, including:

[0109] The deflection is calculated by formula (6):

[0110] Y i ′=Y i +Y ∑i (6)

[0111]

[0112] Among them, Y i ′ is the deflection of the wafer under three-point support, Y i is the normalized deflection of the wafer under test at the i-th measurement position under three-point support, dimensionless, θ is the azimuth angle of any deformation point of the wafer under test,

[0113]

[0114] Specifically, for multi-point discrete uniform supports, since the rotational symmetry of the load state is destroyed, the normalized deflection Y at any point is i ′, in addition to being determined by the rotational symmetry term, is also affected by the non-rotational symmetry term Y ∑i The influence of the normalized deflection Y at any point can be obtained by using formulas (6), (7) and (8): i ′.

[0115] It is not difficult to see from the above that the non-rotational symmetric term Y ∑i It is a three-leaf term with axial symmetry but no rotational symmetry.

[0116] It is not difficult to see from formula (7) that when θ is 0, there will be no cosine term in formula (7), and only Y m Only summation operation is required, which simplifies the operation difficulty and improves the operation efficiency.

[0117] Among them, Y in formula (6) i Calculated by formula (5).

[0118] Figure 6is a distribution diagram of the flexural deformation of the wafer under three-point support in an embodiment of the present invention, referring to Figure 6 For example, taking a 12-inch single crystal silicon wafer as an example, using formulas (3), (6), (7) and (8), the surface flexural deformation distribution of the wafer when the support radius a is 0.67 is obtained as follows: Figure 6 shown.

[0119] Among them, the maximum deformation of the wafer is located at the 180° edge of the wafer, and the flexible deformation distribution is -5.722μm.

[0120] Figure 7 is a simulation diagram of the flexural deformation distribution of the wafer under three-point support in an embodiment of the present invention, referring to Figure 7 The maximum deformation of the wafer is also located at the 180° edge of the wafer, and the flexural deformation distribution is -5.722μm. The deviation from the theoretical calculation result is 0.85%, which is in good agreement.

[0121] Optionally, the azimuth angle of the wafer to be measured is 0.

[0122] Specifically, when the azimuth angle of the wafer to be measured is set to 0, there is no cosine term in formula (7), which can simplify the calculation difficulty and improve the calculation efficiency.

[0123] Optionally, determining the curvature radius of the wafer to be tested according to the flexural deformation distribution includes:

[0124] The wafer to be tested is compensated according to the distribution of flexural deformation, and the curvature radius of the wafer to be tested is calculated by formula (9):

[0125] Δy i =Δy i ′+y i (9)

[0126] Among them, y i is the deflection of the wafer under test when it is supported continuously in a single circle or when it is supported at three points, Δy i is the radius of curvature of the wafer to be tested after a single-circle continuous support and a flexural deformation or the radius of curvature of the wafer to be tested after a three-point support, Δy i ' is the curvature radius of the wafer to be tested.

[0127] Specifically, in formula (9), y i The above other formulas can be used to calculate the deflection of the wafer under test when it is supported in a single circle and at three points, Δy i The curvature radius, Δy, of the wafer after flexible deformation under single-circle continuous support and three-point support can be obtained by testing. i′ is the final required radius of curvature of the wafer in the free state.

[0128] S33, determining the curvature radius of the wafer to be tested according to the flexible deformation distribution.

[0129] Figure 8 is a block diagram of a wafer curvature radius measuring device provided by an embodiment of the present invention, with reference to Figure 8 According to the same inventive concept, an embodiment of the present invention provides a device for measuring the curvature radius of a wafer. The device is used to perform the method for measuring the curvature radius of a wafer described in any of the above-mentioned embodiments of the invention. The device includes:

[0130] An acquisition module 1 is used to acquire the support type of the wafer to be tested;

[0131] Calculation module 2, determining the flexural deformation distribution of the wafer to be tested according to the support type;

[0132] The calculation module 3 determines the curvature radius of the wafer to be tested according to the distribution of the flexible deformation; wherein the support type includes single-circle continuous support or three-point support.

[0133] A wafer curvature radius measuring device provided in an embodiment of the present invention can achieve the same technical effect as a wafer curvature radius measuring method provided in the above-mentioned invention embodiment, which will not be described in detail here.

[0134] According to the same inventive concept, an embodiment of the present invention provides a wafer curvature radius measurement system, including a wafer to be measured and a wafer curvature radius measurement device as described in the above-mentioned invention embodiment.

[0135] A wafer curvature radius measurement system provided in an embodiment of the present invention can achieve the same technical effect as a wafer curvature radius measurement device provided in the above-mentioned invention embodiment, which will not be described in detail here.

[0136] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for measuring the curvature radius of a wafer, characterized in that: include: Get the support type of the wafer to be tested; Determining the distribution of the flexural deformation of the wafer to be tested according to the support type; Determining the radius of curvature of the wafer to be tested according to the flexural deformation distribution; wherein the support type includes single-circle continuous support or three-point support; When the support type is single-circle continuous support, determining the deflection of the wafer to be tested based on a first preset rule includes: The deflection of the wafer under test under single-circle continuous support is calculated by equations (1), (2) and (3): q=ρgh (2) Among them, y i is the deflection of the wafer to be tested under single-circuit continuous support, q is the load strength of the wafer to be tested under its own weight, ρ is the density of the wafer to be tested, g is the acceleration of gravity, and h is the thickness of the wafer to be tested; R is the outer diameter of the wafer to be tested, K is the bending stiffness of the wafer to be tested, E is the elastic modulus of the wafer to be tested, v is the Poisson's ratio of the wafer to be tested, and Y i is the normalized deflection of the wafer to be measured at the ith measurement position under a single-turn continuous support, dimensionless; The support radius of the wafer to be tested and the distribution radius of the wafer to be tested are normalized based on formula (4): Wherein, a is the normalized support radius of the wafer to be tested, and x is the normalized distribution radius of the wafer to be tested; The normalized deflection is determined according to the normalized support radius and the normalized distribution radius, and the normalized deflection is calculated by formula (5): Wherein, v is the Poisson's ratio of the wafer to be tested; When the support type is three-point support, determining the deflection of the wafer to be tested based on a second preset rule includes: The deflection is calculated by formula (6): AND i 'And i +Y Σi (6) Among them, Y i ′ is the deflection of the wafer under test under three-point support, Y i is the normalized deflection of the wafer under test at the ith measurement position under three-point support, dimensionless, θ is the azimuth angle of any deformation point of the wafer under test, Determining the curvature radius of the wafer to be tested according to the flexible deformation distribution includes: The wafer to be tested is compensated according to the distribution of the flexural deformation, and the curvature radius of the wafer to be tested is calculated by formula (9): Δy i =Δy i ′+y i (9) Among them, y i is the deflection of the wafer under test when it is supported continuously in a single circle or when it is supported at three points, Δy i is the radius of curvature of the wafer to be tested after a single-circle continuous support and a flexural deformation or the radius of curvature of the wafer to be tested after a three-point support, Δy i ' is the curvature radius of the wafer to be tested.

2. The method for measuring the curvature radius of a wafer according to claim 1, characterized in that: The step of obtaining the support type of the wafer to be tested includes: Acquiring a support structure of the wafer to be tested; The support type of the wafer to be tested is determined according to the support structure.

3. The method for measuring the curvature radius of a wafer according to claim 1, characterized in that: The azimuth angle of the wafer to be tested is 0.

4. A device for measuring the curvature radius of a wafer, characterized in that: The measuring device is used to perform the wafer curvature radius measuring method according to any one of claims 1 to 3, and the measuring device comprises: An acquisition module, used to acquire the support type of the wafer to be tested; A calculation module, for determining the distribution of the flexural deformation of the wafer to be tested according to the support type; A calculation module determines the curvature radius of the wafer to be tested according to the flexible deformation distribution; wherein the support type includes single-circle continuous support or three-point support.

5. A wafer curvature radius measurement system, characterized in that: A device for measuring the curvature radius of a wafer comprising a wafer to be measured and the device according to claim 4.

Images