Power conversion device

Abstract

The embodiment of the invention provides power conversion equipment, and relates to the technical field of energy. The power conversion equipment comprises an equipment shell and a power module, the equipment shell is used for accommodating the power module, the power module is used for converting direct current from the photovoltaic module or the energy storage battery into alternating current, the power module comprises a substrate, a bare chip, a semiconductor chilling plate and a packaging shell, and the bare chip is fixed on the substrate; the semiconductor chilling plate is fixed on the surface, away from the substrate, of the bare chip, the semiconductor chilling plate is provided with a first surface and a second surface which are opposite, the first surface is connected with the bare chip, and the temperature of the first surface is lower than that of the second surface after the semiconductor chilling plate is electrified; the substrate, the bare chip and the semiconductor chilling plate are all located in the packaging shell, or the packaging shell covers the substrate, and the bare chip and the semiconductor chilling plate are all located in a space defined by the packaging shell and the substrate. According to the technical scheme, the power module can be quickly and timely cooled, the risk of damage to the power module is reduced, and the power conversion equipment can stably operate.

Description

Technical Field

[0001] The present application relates to the field of energy technology, and in particular to a power conversion device. Background Art

[0002] With the development of electronic technology, the loss of power modules in power conversion equipment has gradually increased, resulting in a gradual increase in the heat dissipation demand for power modules. In related technologies, the heat dissipation of power modules is usually achieved by setting a heat sink outside the power module, and the heat generated by the power module is transferred to the external environment through the heat sink for heat dissipation.

[0003] However, it takes a certain amount of time for the heat of the power module to be transferred outward through the heat sink. Under some special working conditions, for example, when the grid voltage is abnormal, the grid requires power conversion equipment (such as inverters and energy storage converters) to provide a larger current to maintain the stable operation of the grid, resulting in a large instantaneous heat generation of the power module. The generated heat is difficult to dissipate quickly and timely through the heat sink outside the power module, which puts the power module at risk of damage. Summary of the invention

[0004] The present application provides a power conversion device that can quickly and timely dissipate heat for a power module, thereby reducing the risk of damage to the power module and enabling the power conversion device to operate stably.

[0005] In order to achieve the above objectives, this application adopts the following technical solutions:

[0006] The present application provides a power conversion device, which includes a device shell and a power module; the device shell is used to accommodate the power module, the power module is used to convert direct current from a photovoltaic module or an energy storage battery into alternating current, the power module includes a substrate, a bare chip, a semiconductor cooling chip and a packaging shell, the bare chip is fixed to the substrate; the semiconductor cooling chip is fixed to the surface of the bare chip facing away from the substrate, the semiconductor cooling chip has a first surface and a second surface relative to each other, the first surface is connected to the bare chip, and when the semiconductor cooling chip is powered on, the temperature of the first surface is lower than the temperature of the second surface; the substrate, the bare chip and the semiconductor cooling chip are all located in the packaging shell, or the packaging shell is covered on the substrate, and the bare chip and the semiconductor cooling chip are all located in the space enclosed by the packaging shell and the substrate.

[0007] When the semiconductor cooling chip is powered on, a cooler first side (cold side) and a hot first side (hot side) will be formed. The semiconductor cooling chip is encapsulated in the package shell, and the first side of the semiconductor cooling chip is attached to the bare chip. When the power module generates a large amount of heat, the bare chip is the part that generates the most heat inside the power module. Compared with the heat of the bare chip being transferred outward through the substrate or the package shell for heat dissipation, the first side of the semiconductor cooling chip can cool the bare chip more timely, quickly reduce the temperature of the bare chip, and quickly and timely dissipate the heat of the power module, thereby reducing the risk of damage to the power module, increasing the service life of the power module, and enabling the power conversion equipment to operate stably.

[0008] In an optional embodiment, the power module also includes a first connecting wire and a second connecting wire; the surface of the substrate facing the bare chip includes a plurality of routing surfaces insulated from each other, the plurality of routing surfaces include a first routing surface and a second routing surface, the first connecting wire electrically connects the positive electrode of the semiconductor cooling plate and the first routing surface, and the second connecting wire electrically connects the negative electrode of the semiconductor cooling plate and the second routing surface.

[0009] The substrate may be a substrate covered with a wiring surface, such as a direct copper bond (DCB) substrate, etc., wherein the wiring surface (e.g., a metal surface) is conductive, and the positive and negative electrodes of the semiconductor cooling plate are connected to the corresponding wiring surfaces through the first connecting wire and the second connecting wire, respectively, and the two wiring surfaces electrically connected to the positive and negative electrodes of the semiconductor cooling plate are insulated from the wiring surface where the bare chip is placed, that is, the first wiring surface (electrically connected to the positive electrode of the semiconductor cooling plate) and the second wiring surface (electrically connected to the negative electrode of the semiconductor cooling plate) are both insulated from the wiring surface where the bare chip is placed. In this way, after the positive and negative electrodes of the semiconductor cooling plate are energized, the possibility of the current flowing through the positive and negative electrodes of the semiconductor cooling plate affecting the bare chip can be reduced.

[0010] In an optional embodiment, the power module also includes a metal plate and a third connecting wire, the metal plate is fixed between the semiconductor cooling plate and the bare chip; the multiple routing planes also include a third routing plane and a fourth routing plane, the third routing plane is electrically connected to the first pole of the bare chip, the metal plate is electrically connected to the second pole of the bare chip, and the third connecting wire electrically connects the metal plate and the fourth routing plane.

[0011] During the power module operation, current will flow through the first and second electrodes of the bare chip. The first and second electrodes are two opposite poles on the bare chip. For example, when the bare chip is an insulated-gate bipolar transistor (IGBT), the first electrode of the bare chip is the collector (C electrode) and the second electrode is the emitter (E electrode). For another example, when the bare chip is a metal-oxide-semiconductor field-effect transistor (MOSFET), the first electrode of the bare chip is the drain (D electrode) and the second electrode is the source (S electrode). The first electrode of the bare chip is electrically connected to the third wiring plane, and the current flowing through the third wiring plane will pass through the first electrode. If the second electrode of the bare chip is directly electrically connected to one or more connecting wires, since the semiconductor cooling sheet covers the surface of the bare chip, it also covers a part of the second electrode. Therefore, the area on the second electrode of the bare chip for the connecting wire to connect is small, which will make the current unable to flow evenly through the second electrode of the bare chip, causing the temperature of the local area of ​​the second electrode (the area connected to the third connecting wire) to rise. Therefore, a metal plate is provided and the third connecting line is connected to the metal plate, so that the second pole has more area (contact area with the metal plate) for current to flow through, thereby reducing the possibility of serious heating in a local area of ​​the second pole.

[0012] In an optional embodiment, the power module further includes a plurality of pins, the plurality of pins are fixed to the packaging shell, each pin extends from inside the packaging shell to outside the packaging shell, and the first routing plane, the second routing plane and the third routing plane are each electrically connected to at least one pin.

[0013] Pins are provided to facilitate the external circuit board of the packaged power module, and current can be input into the wiring surface through the pins, or the current on the wiring surface can also be output through the pins. For example, current can be transmitted to the first wiring surface through the pins electrically connected to the first wiring surface, and then transmitted to the positive electrode of the semiconductor cooling plate through the first connecting wire electrically connected to the first wiring surface, and then flow through the negative electrode of the semiconductor cooling plate, the second connecting wire and the second wiring surface, and then transmitted to the pins electrically connected to the second wiring surface.

[0014] In an optional embodiment, the packaging shell includes a packaging plate and a packaging cover, the substrate is fixed to the packaging plate with its surface facing away from the bare chip, the packaging cover is arranged on the packaging plate, and the substrate, bare chip and semiconductor cooling plate are all located in the space enclosed by the packaging cover and the packaging plate.

[0015] The substrate is fixed on the packaging board, and the packaging cover is set on the packaging board. After the packaging cover and the packaging board are fixed, the substrate, bare chip and semiconductor cooling sheet will be surrounded by the packaging cover and the packaging board, thereby realizing the packaging of structures such as the substrate, bare chip and semiconductor cooling sheet.

[0016] In an optional embodiment, the power module also includes a plurality of pins, the plurality of pins are fixed to the packaging shell, each pin extends from inside the packaging shell to outside the packaging shell, and the plurality of pins include a first pin and a second pin; the power module also includes a first connecting wire and a second connecting wire, the first connecting wire electrically connects the positive pole of the semiconductor refrigeration plate and the first pin, and the second connecting wire electrically connects the negative pole of the semiconductor refrigeration plate and the second pin.

[0017] The first connecting wire and the second connecting wire electrically connected to the positive and negative electrodes of the semiconductor cooling film respectively may not be electrically connected to the substrate, but may be directly electrically connected to the corresponding pins, that is, the current input from the first pin will be transmitted to the positive electrode of the semiconductor cooling film through the first connecting wire, and transmitted to the second pin through the negative electrode of the semiconductor cooling film and the second connecting wire. Since the bare chip is fixed on the substrate, the first pin and the second pin are not electrically connected to the substrate, and after the positive and negative electrodes of the semiconductor cooling film are energized, the possibility of the current flowing through the positive and negative electrodes of the semiconductor cooling film affecting the bare chip can be reduced.

[0018] In an optional embodiment, the power module also includes a metal plate and a third connecting wire; the metal plate is fixed between the semiconductor cooling plate and the bare chip, the first pole of the bare chip is electrically connected to the substrate, and the second pole of the bare chip is electrically connected to the metal plate; the multiple pins also include a third pin and a fourth pin, the third connecting wire electrically connects the metal plate and the third pin, and the fourth pin is electrically connected to the substrate.

[0019] Since the semiconductor cooling sheet covers the surface of the bare chip, it also covers a part of the second pole. If the second pole of the bare chip is directly electrically connected to one or more connecting wires, the area on the second pole of the bare chip for connecting the connecting wires is small, which will make the current unable to flow evenly through the second pole of the bare chip, causing the temperature of the local area of ​​the second pole (the area electrically connected to the connecting wire) to rise. Therefore, a metal plate is set and the third connecting wire is connected to the metal plate, so that the second pole has more area (the contact area with the metal plate) for current to flow through, reducing the possibility of severe heating of the local area of ​​the second pole. In this example, the first pole of the bare chip is electrically connected to the substrate, the substrate is electrically connected to the fourth pin, and the third connecting wire electrically connected to the second pole is not electrically connected to the substrate, but is electrically connected to the corresponding third pin, reducing the possibility of a short circuit between the third pin and the fourth pin.

[0020] In an optional embodiment, the bare chip is an insulated gate bipolar transistor, the first electrode of the bare chip is the collector, and the second electrode of the bare chip is the emitter; or, the bare chip is a metal-oxide semiconductor field effect transistor, the first electrode of the bare chip is the drain, and the second electrode of the bare chip is the source.

[0021] The die may be any suitable device, for example, the die may be an insulated gate bipolar transistor (IGBT), or the die may be a metal-oxide semiconductor field effect transistor (MOSFET).

[0022] In an optional implementation, the power conversion device further includes a circuit board, which is fixed in the device housing, and a plurality of pins are electrically connected to the circuit board.

[0023] The power module can be electrically connected to the circuit board through its own pins. For example, a plurality of pins can be welded on the circuit board to achieve electrical connection between the power module and the circuit board.

[0024] In an optional embodiment, the power module further includes a heat storage plate, the material of the heat storage plate includes phase change material or metal, the heat storage plate is located in the packaging shell and fixed to the second surface of the semiconductor refrigeration plate, and the heat storage plate is used to absorb heat from the second surface.

[0025] After the semiconductor refrigeration chip is powered on, the temperature of the second side (hot side) will rise, which is the characteristic of the semiconductor refrigeration chip. In this application, the heat storage chip is fixed on the second side of the semiconductor refrigeration chip. The heat storage chip can be made of metal or phase change material, so that the specific heat capacity of the heat storage chip is higher. After the second side is heated, the heat storage chip can absorb and store the heat of the second side in time, improve the cooling capacity of the semiconductor refrigeration chip, and reduce the influence of the heat of the second side on the bare chip or other devices inside the packaging shell, and further control the temperature of the power module.

[0026] In an optional embodiment, the power conversion device also includes a heat sink, which is at least partially located in the device shell and has multiple channels for liquid or gas to flow through; the heat sink is fixed to the surface of the substrate away from the bare chip, or the heat sink is fixed to the packaging shell.

[0027] The radiator can be an air-cooled radiator, which exchanges heat with the air through multiple channels to dissipate heat for the power module; the radiator can also be a liquid-cooled radiator, which dissipates heat for the power module through the flow of liquid in the channel. When the power conversion device is in normal operation, the heat dissipation requirements of the power module can be met through the channel of the radiator. When the power conversion device is in special working conditions, for example, the power conversion device needs to provide a large current to the power grid to maintain the stable operation of the power grid, the power module generates a large amount of heat instantaneously, and the semiconductor cooling chip is powered on, which can quickly and timely cool the bare chip through the first side (cold side) of the semiconductor cooling chip, thereby limiting the instantaneous heat generation of the power module. Through the cooperation of external heat dissipation (radiator) and internal cooling (semiconductor cooling chip), the risk of damage to the power module is reduced, making the operation of the power conversion device more stable.

[0028] In an optional embodiment, the heat sink includes a heat conductive plate and a plurality of fins, the heat conductive plate is located inside the device shell and fixed on a substrate or a packaging shell, the plurality of fins are fixed on a surface of the heat conductive plate facing away from the substrate, the channel includes a gap between two adjacent fins, and the plurality of fins extend outside the device shell.

[0029] When the radiator is an air-cooled radiator, the heat of the power module can be transferred to the heat conducting plate, and then transferred to the fins through the heat conducting plate. The heat on the fins is exchanged with the air through the channel, thereby dissipating the heat of the power module.

[0030] In an optional embodiment, the heat sink is located in the device housing and fixed to the substrate or the packaging housing, and the channel is located in the heat sink and is used for liquid flow.

[0031] In the case where the radiator is a liquid-cooled radiator, the heat of the power module can be transferred to the radiator, and the coolant will flow through the channel and take away the heat of the power module, thereby achieving liquid cooling of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of the structure of a photovoltaic system provided in an embodiment of the present application;

[0033] Figure 2 A schematic diagram of the structure of a power conversion device provided in an embodiment of the present application;

[0034] Figure 3 A schematic diagram of the structure of a radiator provided in an embodiment of the present application;

[0035] Figure 4 A schematic diagram of the structure of another radiator provided in an embodiment of the present application;

[0036] Figure 5 A topological diagram of a power conversion device provided in an embodiment of the present application;

[0037] Figure 6 A schematic diagram of the internal structure of a power module provided in an embodiment of the present application;

[0038] Figure 7 A schematic diagram of the structure of a semiconductor refrigeration sheet provided in an embodiment of the present application;

[0039] Figure 8 A schematic diagram of the structure of a substrate provided in an embodiment of the present application;

[0040] Fig. 9 A schematic diagram of the structure of another substrate provided in an embodiment of the present application;

[0041] Fig.10 A schematic diagram of the structure of a power module provided in an embodiment of the present application;

[0042] Fig.11 A schematic diagram of the structure of a pin provided in an embodiment of the present application;

[0043] Fig.12A schematic diagram of the structure of another power module provided in an embodiment of the present application;

[0044] Fig.13 A schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0045] Fig.14 A schematic diagram of the structure of a metal plate provided in an embodiment of the present application;

[0046] Fig.15 A schematic diagram of the structure of a heat storage sheet provided in an embodiment of the present application;

[0047] Fig.16 A schematic diagram of the structure of another power module provided in an embodiment of the present application;

[0048] Fig.17 A schematic diagram of the structure of another substrate provided in an embodiment of the present application;

[0049] Fig.18 A schematic diagram of the structure of another pin provided in an embodiment of the present application;

[0050] Fig.19 A schematic diagram of the structure of another metal plate and heat storage sheet provided in an embodiment of the present application;

[0051] Fig. 20 A schematic diagram of the structure of another power module provided in an embodiment of the present application.

[0052] Reference numerals:

[0053] 100- photovoltaic system; 101- photovoltaic module; 102- power conversion equipment; 103- switch box; 104- box-type substation; 105- power grid;

[0054] 1-device shell; 11-port; 12-air outlet; 2-circuit board; 3-power module; 31-substrate; 311-wiring surface; 3111-first wiring surface; 3112-second wiring surface; 3113-third wiring surface; 3114-fourth wiring surface; 3115-fifth wiring surface; 32-bare chip; 321-first pole; 322-second pole; 323-control pole; 33-semiconductor cooling plate; 331-first surface; 332-second surface; 333-first side plate; 334-second side plate; 335-positive pole; 336-negative pole; 337 ...8-semiconductor cooling plate; 339-semiconductor cooling plate; 340-semiconductor cooling plate; 341-semiconductor cooling plate; 342-semiconductor cooling plate; 343-semiconductor cooling plate; 344-semiconductor cooling plate; 345-semiconductor cooling plate; 346-semiconductor cooling plate; 347-semiconductor cooling plate; 348-semiconductor cooling plate; 349-semiconductor cooling plate; 350-semiconductor cooling plate; 351-semiconductor cooling plate; 352-semiconductor cooling plate; 353-semiconductor cooling plate; 354-semiconductor cooling plate; 355-semiconductor cooling plate Conductor thermocouple; 3371-N-type semiconductor; 3372-P-type semiconductor; 34-packaging shell; 341-packaging board; 342-packaging cover; 35-connecting wire; 351-first connecting wire; 352-second connecting wire; 353-third connecting wire; 354-fourth connecting wire; 36-pin; 361-first pin; 362-second pin; 363-third pin; 364-fourth pin; 365-fifth pin; 37-metal plate; 38-heat storage plate; 4-radiator; 41-channel; 42-heat conducting plate; 43-fin; 5-heat dissipation cover. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0056] In the drawings of the embodiments of the present application, solid structures such as components and assemblies are represented by guide lines; hollow structures such as openings, holes, spaces, and cavities are represented by guide lines with arrows.

[0057] The embodiment of the present application provides a power conversion device 102. In one example, the power conversion device 102 may be an inverter. In this example, the power conversion device 102 is used in a photovoltaic system 100. Figure 1 The structure of a photovoltaic system 100 is shown as an example. Figure 1 The photovoltaic module 101 directly converts solar energy into electrical energy using the photovoltaic effect, wherein the photovoltaic module 101 generally includes multiple (the multiple in this application refers to two or more) solar cells connected in series or in parallel to achieve a certain rated output power and voltage. The power conversion device 102 (for example, a photovoltaic inverter) is used to convert the direct current from the photovoltaic module 101 into alternating current, which is then sent to the box-type substation 104 for voltage transformation after passing through the switch box 103 for controlling the on and off, and then output to the power grid 105 or other loads.

[0058] In another example, the power conversion device 102 may be a power conversion system (PCS). In this example (not shown in the drawings), the power conversion device 102 is used in an energy storage system, and the DC source of the power conversion device 102 includes an energy storage battery. The power conversion device 102 is used to convert the DC power from the energy storage battery into AC power and output it to the power grid 105 or other loads. In addition, the power conversion device 102 (energy storage converter) can also convert the AC power of the power grid 105 into DC power to charge the energy storage battery.

[0059] Figure 2 A power conversion device 102 is shown as an example. Figure 3 The example shows Figure 2 The internal structure of the power conversion device 102 is shown in FIG. Figure 2 and Figure 3 The power conversion device 102 includes a device shell 1, a circuit board 2 and a power module 3. The device shell 1 can be any suitable shell or box, and the device shell 1 has a space for placing devices and apparatuses. The circuit board 2 can be a printed circuit board (PCB), and the circuit board 2 is fixed in the internal space of the device shell 1. The power module 3 is used to convert the direct current from the photovoltaic module 101 or the energy storage battery into alternating current. The power module 3 is located in the device shell 1 and fixed on the circuit board 2. That is, the circuit board 2 and the power module 3 are both located in the device shell 1.

[0060] The power conversion device 102 may further include a heat sink 4, wherein the heat sink 4 is used to dissipate heat for the power module 3. Figure 3 A structure of a heat sink 4 is shown in FIG. Figure 3 In the example shown, the radiator 4 is an air-cooled radiator, and the radiator 4 includes a heat conducting plate 42 and a plurality of fins 43. The heat conducting plate 42 is located in the device housing 1 and fixed on the power module 3. The plurality of fins 43 are fixed on the surface of the heat conducting plate 42 away from the power module 3. A gap is formed between two adjacent fins 43, and the channel 41 includes all gaps between the plurality of fins 43. The device housing 1 is provided with a through opening 11, and the plurality of fins 43 extend out of the device housing 1 through the through opening 11.

[0061] In the case where the radiator 4 is an air-cooled radiator, the heat of the power module 3 can be transferred to the heat conducting plate 42, and then transferred to the fins 43 through the heat conducting plate 42. The heat on the fins 43 exchanges heat with the air through the channel 41, thereby dissipating the heat of the power module 3. Figure 2 and Figure 3The power conversion device 102 may further include a heat dissipation cover 5, which is located outside the device shell 1 and fixed on the device shell 1. The heat dissipation cover 5 can cover multiple fins 43 of the radiator 4 inside, wherein, in order to facilitate heat dissipation, the heat dissipation cover 5 is also provided with multiple air outlets 12, for example, multiple air inlets and multiple air outlets.

[0062] In some other examples, the radiator 4 may also be a liquid cooling radiator 4. Figure 4 Another radiator 4 (liquid cooling type) is shown as an example. Figure 4 In this example, the radiator 4 is located in the device housing 1 and fixed on the power module 3, that is, the radiator 4 does not extend out of the device housing 1. A channel 41 is formed in the radiator 4, and the channel 41 can allow a coolant (for example, water) to pass through. In the case where the radiator 4 is a liquid-cooled radiator, the heat of the power module 3 can be transferred to the radiator 4, and the coolant will take away the heat of the power module 3 when flowing through the channel 41, thereby achieving liquid cooling of the power module 3.

[0063] One power module 3 may be provided, or multiple power modules 3 may be provided, and each power module 3 is fixed on the circuit board 2 and electrically connected to the circuit board 2. In the case where multiple power modules 3 are provided, a heat sink 4 may be connected to multiple power modules 3 at the same time, and dissipate heat for multiple power modules 3 at the same time. Alternatively, in the case where multiple power modules 3 are provided, multiple heat sinks 4 may be provided, and each heat sink 4 dissipates heat for a corresponding heat sink 4. In the present application, there is no specific restriction on the number of power modules 3 and the number of heat sinks 4.

[0064] The power module 3 may be any device for converting direct current into alternating current. Figure 5 The topology diagram (partial) of a power conversion device 102 is shown as an example. A switch tube may be packaged in the power module 3. For example, Figure 5 The switch tube in the dotted box a can be packaged in a power module 3 (the switch tube in the dotted box a is only a part of the power module 3). The power module 3 can also be packaged with multiple switch tubes, for example, Figure 5 The multiple switch tubes in the dotted box b can be packaged in a power module 3. For example, Figure 5 The multiple switch tubes in the dotted box c can be packaged in a power module 3 (the switch tubes in the dotted box b or the dotted box c are only a part of the corresponding power module 3).

[0065] Figure 6 The internal structure of a power module 3 is shown as an example. Figure 6The power module 3 includes a substrate 31, a die 32 (die) and a packaging shell 34. The substrate 31 can be any plate structure that can carry the die 32. For example, the substrate 31 can be a copper-clad ceramic substrate 31 (Direct Bonding Copper, DBC). In some other examples, the substrate 31 can also be a copper plate, an aluminum plate, etc. The die 32 can be an insulated gate bipolar transistor (IGBT), a diode, a silicon carbide (SiC) tube, a metal-oxide semiconductor field-effect transistor (MOSFET), a gallium nitride (GaN) tube, a thyristor, and the like. The die 32 is fixed on the substrate 31. Figure 6 In the example shown, the substrate 31 and the die 32 are both located in a packaging case 34 , and the packaging case 34 is used to package the substrate 31 and the die 32 .

[0066] Reference Figure 6 The power module 3 also includes a semiconductor cooling sheet 33 (or thermoelectric cooling sheet). For example, the semiconductor cooling sheet 33 can be a sheet-shaped semiconductor cooler (Thermoelectric Cooler). The semiconductor cooling sheet 33 is also encapsulated in the encapsulation shell 34, and the semiconductor cooling sheet 33 is fixed on the surface of the bare chip 32 away from the substrate 31. Among them, the semiconductor cooling sheet 33 has a first surface 331 and a second surface 332 opposite to each other. The first surface 331 and the second surface 332 are arranged back to back. After the semiconductor cooling sheet 33 is loaded with current, the temperature of the first surface 331 is lower and the temperature of the second surface 332 is higher. That is, when the semiconductor cooling sheet 33 is powered on, the temperature of the first surface 331 is lower than the temperature of the second surface 332. The first surface 331 is the cold surface of the semiconductor cooling sheet 33, and the second surface 332 is the hot surface of the semiconductor cooling sheet 33. The first surface 331 (cold surface) of the semiconductor cooling sheet 33 is connected to the bare chip 32.

[0067] Figure 7 The structure of a semiconductor cooling sheet 33 is shown as an example. Figure 7 Only used to explain the basic principle of semiconductor cooling sheet 33, refer to Figure 7The semiconductor cooling plate 33 may include a first side plate 333, a second side plate 334, a positive electrode 335, a negative electrode 336, and a plurality of semiconductor thermocouples 337. The first side plate 333 and the second side plate 334 are arranged opposite to each other, and the plurality of semiconductor thermocouples 337 are located between the first side plate 333 and the second side plate 334. The plurality of semiconductor thermocouples 337 are sequentially connected in series. In the plurality of semiconductor thermocouples 337 sequentially connected in series, the first semiconductor thermocouple 337 is electrically connected to the positive electrode 335, and the last semiconductor thermocouple 337 is electrically connected to the negative electrode 336.

[0068] Reference Figure 7 Each group of semiconductor thermocouples 337 includes an N-type semiconductor 3371 and a P-type semiconductor 3372 connected in series. In the two groups of semiconductor thermocouples 337 connected in series, the N-type semiconductor 3371 in one group of semiconductor thermocouples 337 is connected in series with the P-type semiconductor 3372 in the other group of semiconductor thermocouples 337. The connection between the N-type semiconductor 3371 and the P-type semiconductor 3372 belonging to different semiconductor thermocouples 337 is close to the first side plate 333, and the connection between the N-type semiconductor 3371 and the P-type semiconductor 3372 belonging to the same group of semiconductor thermocouples 337 is close to the second side plate 334.

[0069] When voltage is applied to the semiconductor cooling sheet 33, when electrons pass through the junction from the P-type semiconductor 3372 to the N-type semiconductor 3371, the temperature of the junction decreases, and when electrons flow from the N-type semiconductor 3371 to the P-type semiconductor 3372, the temperature of the junction increases. That is, when current passes through the connection between the N-type semiconductor 3371 and the P-type semiconductor 3372, heat absorption or heat release occurs, causing the semiconductor cooling sheet 33 to absorb heat at the first side plate 333 to achieve a cooling function, and release heat at the second side plate 334 to achieve a heating function. Figure 7 In the example shown, the first surface 331 (cold surface) may be the surface of the first side plate 333 facing away from the second side plate 334 , and the second surface 332 (hot surface) may be the surface of the second side plate 334 facing away from the first side plate 333 .

[0070] When the power module 3 generates a large amount of heat, the bare chip 32 is the part of the power module 3 that generates the most heat. A semiconductor cooling chip 33 is encapsulated in a packaging shell 34, and a first surface 331 (cold surface) of the semiconductor cooling chip 33 is attached to the bare chip 32. Compared with the heat of the bare chip 32 being transferred outward through the substrate 31 or the packaging shell 34 for heat dissipation, the first surface 331 of the semiconductor cooling chip 33 can cool down the bare chip 32 more timely, quickly control the temperature of the bare chip 32, and quickly and timely dissipate the heat of the power module 3, thereby reducing the risk of damage to the power module 3, increasing the service life of the power module 3, and enabling the power conversion device 102 to operate stably.

[0071] When the power conversion device 102 further includes a heat sink 4, Figure 6 The dotted box in the middle indicates the radiator 4, which can dissipate heat and cool the power module 3 by means of the cooperation between the semiconductor cooling plate 33 and the radiator 4. That is, by the cooperation between external heat dissipation (radiator 4) and internal cooling (semiconductor cooling plate 33), the risk of damage to the power module 3 is reduced, making the operation of the power conversion device 102 more stable.

[0072] For example, when the power conversion device 102 is in normal operation, the heat dissipation demand of the power module 3 can be met through the channel 41 of the radiator 4. When the power conversion device 102 is in a special working condition (for example, the power conversion device 102 needs to provide a large current to the power grid 105 to maintain the stable operation of the power grid 105), the instantaneous heat generation of the power module 3 is large, and the semiconductor cooling plate 33 is powered on, and the first surface 331 of the semiconductor cooling plate 33 can be used to quickly and timely cool the bare chip 32, thereby limiting the instantaneous heat generation of the power module 3.

[0073] That is, in some instances, the semiconductor cooling chip 33 can be powered on only when needed. For example, a current detection device is provided on the circuit board 2 to monitor the current output by the power module 3. When the current value of the output current of the power module 3 is greater than or equal to the first threshold, the semiconductor cooling chip 33 is powered on to cool the bare chip 32. When the current value of the output current of the power module 3 is less than the first threshold, the semiconductor cooling chip 33 stops being powered on. For another example, a temperature detection device is provided on the power module 3 to monitor the temperature of the power module 3. When the temperature value of the power module 3 is greater than or equal to the second threshold, the semiconductor cooling chip 33 is powered on to cool the bare chip 32. When the temperature value of the power module 3 is less than the second threshold, the semiconductor cooling chip 33 stops being powered on. For another example, the power conversion device 102 further includes a detection device. When the detection device detects that the voltage of the power grid 105 drops rapidly and the power conversion device 102 needs to deliver more current to the power grid 105, the semiconductor cooling chip 33 is powered on to cool down the bare chip 32. When the detection device detects that the power grid 105 returns to normal, the semiconductor cooling chip 33 stops being powered on. For another example, one side of the power grid 105 sends a signal to control the semiconductor cooling chip 33 to start or stop toward the power conversion device 102. After the power grid 105 sends a signal to start the semiconductor cooling chip 33 toward the power conversion device 102, the semiconductor cooling chip 33 is powered on to cool down the bare chip 32. After the power grid 105 sends a signal to turn off the semiconductor cooling chip 33 toward the power conversion device 102, the semiconductor cooling chip 33 stops being powered on.

[0074] In some other examples, the semiconductor cooling sheet 33 may be energized intermittently and regularly. Alternatively, in some other examples, the semiconductor cooling sheet 33 may be energized continuously.

[0075] Among them, the circuit that supplies power to the semiconductor cooling plate 33 can be an auxiliary circuit inside the power conversion device 102, the auxiliary circuit can be externally connected to the photovoltaic component 101 (or energy storage battery), and the auxiliary circuit can also be externally connected to the power grid 105. This application does not impose specific restrictions on this.

[0076] In some other examples, the power conversion device 102 may not include the heat sink 4 , and only cools the power module 3 through the semiconductor cooling sheet 33 .

[0077] Figure 8 The structure of a substrate 31 is shown as an example, and the surface of the substrate 31 facing the bare chip 32 includes multiple wiring planes 311 that are insulated from each other. For example, when the substrate 31 is a copper-clad ceramic substrate (DBC), the multiple wiring planes 311 can be the surfaces of multiple copper sheets fixed on the ceramic board in the copper-clad ceramic substrate. In some other examples, the wiring plane 311 can be the metal surface of the substrate 31 itself. The multiple wiring planes 311 are insulated from each other, for example, there are gaps between the multiple wiring planes 311, or the gaps between the multiple wiring planes 311 are filled with insulating media.

[0078] The plurality of routing planes 311 may include a first routing plane 3111, a second routing plane 3112 and a third routing plane 3113, and the power module 3 further includes a plurality of connecting wires 35 (see Figure 6 ), wherein each connecting wire 35 is a conductive lead, for example, a bonding lead. Return to reference Figure 8 The plurality of connection lines 35 may include a first connection line 351 and a second connection line 352. The first connection line 351 electrically connects the positive electrode 335 of the semiconductor cooling sheet 33 and the first wiring surface 3111. The second connection line 352 electrically connects the negative electrode 336 of the semiconductor cooling sheet 33 and the second wiring surface 3112. In addition, the bare chip 32 is fixed on the third wiring surface 3113.

[0079] The routing surface 311 is conductive, and the positive electrode 335 and the negative electrode 336 of the semiconductor cooling plate 33 are electrically connected to the corresponding routing surface 311 through the corresponding connecting wires 35, and the two routing surfaces 311 electrically connected to the positive electrode 335 and the negative electrode 336 of the semiconductor cooling plate 33 are insulated from each other from the routing surface 311 where the bare chip 32 is placed, that is, the first routing surface 3111 (electrically connected to the positive electrode 335 of the semiconductor cooling plate 33) and the second routing surface 3112 (electrically connected to the negative electrode 336 of the semiconductor cooling plate 33) are insulated from each other, and the first routing surface 3111 and the second routing surface 3112 are both insulated from the third routing surface 3113 (the routing surface 311 where the bare chip 32 is placed). In this way, the possibility of the current flowing through the positive electrode 335 and the negative electrode 336 of the semiconductor cooling plate 33 affecting the bare chip 32 is reduced.

[0080] Reference Figure 6 and Figure 8 The die 32 has a first electrode 321 and a second electrode 322 relative to each other. For example, when the die 32 is an insulated gate bipolar transistor (IGBT), the first electrode 321 of the die 32 is a collector (C electrode), and the second electrode 322 is an emitter (E electrode). For another example, when the die 32 is a metal-oxide semiconductor field effect transistor (MOSFET), the first electrode 321 of the die 32 is a drain (D electrode), and the second electrode 322 is a source (S electrode). The first electrode 321 of the die 32 faces the substrate 31, and the first electrode 321 of the die 32 is electrically connected to the third wiring plane 3113, and the second electrode 322 of the die 32 is away from the substrate 31. The multiple connection lines 35 of the power module 3 also include a third connection line 353, and the multiple wiring planes 311 also include a fourth wiring plane 3114. The third connection line 353 electrically connects the second electrode 322 and the fourth wiring plane 3114.

[0081] In addition, refer to Figure 8 The bare chip 32 also has a control electrode 323. For example, when the bare chip 32 is an insulated gate bipolar transistor (IGBT), the control electrode 323 is a base electrode (G electrode). For another example, when the bare chip 32 is a metal-oxide semiconductor field effect transistor (MOSFET), the control electrode 323 is a gate electrode (G electrode). In addition, the multiple connection lines 35 of the power module 3 also include a fourth connection line 354, and the multiple routing planes 311 also include a fifth routing plane 3115. The fourth connection line 354 is electrically connected to the control electrode 323 and the fifth routing plane 3115.

[0082] Through the above design method, the first pole 321 of the bare chip 32 is electrically connected to the third routing surface 3113, and the current flowing through the third routing surface 3113 will pass through the first pole 321; the second pole 322 of the bare chip 32 is electrically connected to the fourth routing surface 3114 through the third connecting line 353, and the current flowing through the fourth routing surface 3114 will pass through the second pole 322; the control pole 323 of the bare chip 32 is electrically connected to the fifth routing surface 3115 through the fourth connecting line 354, and the current flowing through the fifth routing surface 3115 will pass through the control pole 323.

[0083] in, Figure 8 The shapes and arrangements of the multiple routing surfaces 311 are merely examples and are not limitations of the substrate 31 of the present application. Fig. 9 Another substrate 31 is shown as an example. The wiring surface 311 on the substrate 31 adopts another arrangement mode. Fig. 9 This is intended to express that the shapes and arrangements of the multiple routing surfaces 311 on the substrate 31 can be set according to requirements, and this application does not impose any specific restrictions on this.

[0084] In order to realize the input and output of current, the power module 3 further includes a plurality of pins 36 . The power module 3 can be electrically connected to the circuit board 2 through its own plurality of pins 36 . For example, the plurality of pins 36 can be welded on the circuit board 2 . Fig.10 The structure of a pin 36 is shown as an example, where a plurality of pins 36 are fixed on the package shell 34, and each pin 36 extends from the inside of the package shell 34 to the outside of the package shell 34. The pin 36 may be a metal sheet structure, a metal strip structure, or a terminal-like structure.

[0085] In one example, each of the first routing plane 3111, the second routing plane 3112, the third routing plane 3113, the fourth routing plane 3114, and the fifth routing plane 3115 is electrically connected to at least one pin 36. That is, in the first routing plane 3111, the second routing plane 3112, the third routing plane 3113, the fourth routing plane 3114, and the fifth routing plane 3115, each routing plane 311 is electrically connected to one pin 36, or each routing plane 311 is electrically connected to multiple pins 36, or some routing planes 311 are electrically connected to one pin 36, and other routing planes 311 are electrically connected to multiple pins 36, and the present application does not make specific restrictions on this.

[0086] Fig.11 The exemplary embodiment shows the connection mode between one of the routing planes 311 (third routing plane 3113) and the corresponding pin 36, wherein the pin 36 may be a bent or shaped metal sheet, and the portion of the pin 36 in the package shell 34 contacts the corresponding routing plane 311. In some other examples, the pin 36 may also be electrically connected to the corresponding routing plane 311 through a lead wire.

[0087] Fig.12 Another structure of the pin 36 is shown as an example. Fig.12 , pin 36 is needle-shaped, Fig.13 The connection method between the pin 36 and the wiring surface 311 is shown as an example. Fig.13 Each pin 36 is fixed on the packaging shell 34 , and each pin 36 is electrically connected to the corresponding wiring surface 311 through one or more connecting wires 35 .

[0088] During the power module 3 being powered on and running, current will flow through the first pole 321 and the second pole 322 of the bare chip 32, wherein the first pole 321 of the bare chip 32 is electrically connected to the third wiring surface 3113, and the current flowing through the third wiring surface 3113 will pass through the first pole 321. Since the semiconductor cooling sheet 33 covers the surface of the bare chip 32, it also covers a part of the second pole 322. If the second pole 322 of the bare chip 32 is directly electrically connected to one or more connecting wires 35, the area on the second pole 322 of the bare chip 32 for connecting the connecting wires 35 is small, which will make it impossible for the current to flow evenly through the second pole 322 of the bare chip 32, causing the temperature of a local area of ​​the second pole 322 (the area electrically connected to the connecting wires 35) to rise. Therefore, in some examples, the third connecting wire 353 is not directly electrically connected to the second pole 322. In this example, the power module 3 also includes a metal plate 37, Fig.14 The structure of a metal plate 37 is shown as an example, wherein the metal plate 37 may be an aluminum plate, or a copper plate, etc.

[0089] Reference Fig.14 The metal plate 37 is fixed between the semiconductor cooling sheet 33 and the bare chip 32, that is, the plate surface on one side of the metal plate 37 is connected to the semiconductor cooling sheet 33, and the plate surface on the other side is connected to the second pole 322 of the bare chip 32, the first pole 321 of the bare chip 32 is electrically connected to the third wiring surface 3113, the second pole 322 of the bare chip 32 is electrically connected to the metal plate 37, and the third connecting line 353 is electrically connected to the metal plate 37 and the fourth wiring surface 3114 (the position of the fourth wiring surface 3114 can be used as an auxiliary reference Fig.13 ). The metal plate 37 is provided and the third connecting wire 353 is connected to the metal plate 37, so that the second pole 322 has more area (contact area with the metal plate 37) for current to flow through, thereby reducing the possibility of serious heating of a local area of ​​the second pole 322.

[0090] The shape of the metal plate 37 can be set as required, for example, the surface of the metal plate 37 can be square, the surface of the metal plate 37 can be round, or the surface of the metal plate 37 can be irregular. The area of ​​the surface of the metal plate 37 can also be set as required, for example, the area of ​​the surface of the metal plate 37 can be greater than or equal to the area of ​​the first surface 331 of the semiconductor cooling plate 33, and the area of ​​the surface of the metal plate 37 can also be less than or equal to the area of ​​the second pole 322.

[0091] In addition, in some examples, the power module 3 further includes a heat storage sheet 38. Fig.15 The structure of a heat storage plate 38 is shown as an example. The heat storage plate 38 is located in the packaging shell 34 and fixed on the second surface 332 (hot surface) of the semiconductor refrigeration plate 33. The heat storage plate 38 is used to absorb the heat of the second surface 332. The material of the heat storage plate 38 includes phase change material or metal. For example, the heat storage plate 38 can be a metal sheet (copper sheet, aluminum sheet, iron sheet, etc.); for another example, the heat storage plate 38 can also include a wrapping layer (shell or outer film) and a phase change material. The phase change material is arranged in the wrapping layer. The phase change material can be generally divided into inorganic (crystalline hydrated salt, molten salt, etc.), organic (paraffin, ester acid, etc.) and composite according to the chemical composition. Selecting phase change material or metal as the main component of the heat storage plate 38 can make the heat storage plate 38 have a higher specific heat capacity,

[0092] The heat storage plate 38 is fixed on the second surface 332 of the semiconductor cooling plate 33. After the second surface 332 generates heat, the heat storage plate 38 with a higher specific heat capacity can absorb and store the heat from the second surface 332 in time, thereby improving the cooling capacity of the semiconductor cooling plate 33 and reducing the influence of the heat from the second surface 332 on the bare chip 32 or other devices inside the packaging shell 34, thereby further controlling the temperature of the power module 3.

[0093] In some examples, the power module 3 includes the heat storage sheet 38 but does not include the metal plate 37 .

[0094] The cooling of the inside of the power module 3 is achieved by setting a structure (e.g., semiconductor cooling sheet 33, etc.) in the packaging shell 34, wherein the structure of the packaging shell 34 can be set according to the requirements, for example, referring to Fig.15 (You can also refer to Fig.10 or Fig.12), the packaging shell 34 includes a packaging plate 341 (for example, a copper plate) and a packaging cover 342, the board surface of the substrate 31 facing away from the bare chip 32 is fixed on the packaging plate 341, the packaging cover 342 is covered on the packaging plate 341, and the substrate 31, the bare chip 32 and the semiconductor cooling sheet 33 are all located in the space surrounded by the packaging cover 342 and the packaging plate 341. That is, the substrate 31 is fixed on the packaging plate 341, and the packaging cover 342 is covered on the packaging plate 341. After the packaging cover 342 and the packaging plate 341 are fixed, the substrate 31, the bare chip 32 and the semiconductor cooling sheet 33 will be surrounded by the packaging cover 342 and the packaging plate 341, so as to realize the packaging of the substrate 31, the bare chip 32 and the semiconductor cooling sheet 33 and other structures.

[0095] In the example where the packaging case 34 includes a packaging plate 341 and a packaging cover 342 , if the power conversion device 102 further includes a heat sink 4 , the heat sink 4 may be fixed on the packaging plate 341 of the packaging case 34 .

[0096] Fig.16 The structure of another power module 3 is shown as an example. Fig.17 The internal structure of the power module 3 is shown as an example. Fig.16 and Fig.17 , the substrate 31 is a plate structure made of metal (such as an aluminum plate, a copper plate, etc.), the package shell 34 is a protective cover-like structure, the package shell 34 is covered on the substrate 31, and the bare chip 32 and the semiconductor cooling sheet 33 are both located in the space surrounded by the package shell 34 and the substrate 31. In this example, a plurality of pins 36 are fixed on the package shell 34, and each pin 36 extends from the inside of the package shell 34 to the outside of the package shell 34. In this example, if the power conversion device 102 also includes a heat sink 4, the heat sink 4 can be fixed on the substrate 31.

[0097] Fig.18 Another structure of the pin 36 is shown as an example. Fig.18 To express Fig.16 The connection of multiple pins 36 of the medium power module 3, the multiple pins 36 include a first pin 361, a second pin 362, a third pin 363, a fourth pin 364 and a fifth pin 365, the first connecting wire 351 is electrically connected to the positive electrode 335 of the semiconductor cooling plate 33 and the first pin 361, the second connecting wire 352 is electrically connected to the negative electrode 336 of the semiconductor cooling plate 33 and the second pin 362, the third connecting wire 353 is electrically connected to the second pole 322 of the bare chip 32 and the third pin 363, and the first pole 321 of the bare chip 32 is electrically connected to the substrate 31 (refer to Fig.17 ), the fourth pin 364 is electrically connected to the substrate 31, and the fourth connecting line 354 is electrically connected to the control electrode 323 of the bare chip 32 and the fifth pin 365.

[0098] Among them, only the fourth pin 364 is directly connected to the substrate 31, and the first pin 361, the second pin 362, the third pin 363 and the fifth pin 365 are not directly connected to the substrate 31. In addition, the first connecting wire 351, the second connecting wire 352, the third connecting wire 353 and the fourth connecting wire 354 are not directly connected to the substrate 31, but are electrically connected to the corresponding pins 36. For example, the current input from the first pin 361 will be transmitted to the positive electrode 335 of the semiconductor cooling sheet 33 through the first connecting wire 351, and will be transmitted to the second pin 362 through the negative electrode 336 of the semiconductor cooling sheet 33 and the second connecting wire 352.

[0099] exist Fig.17 and Fig.18 In the example shown, the power module 3 may also include a metal plate 37 or a heat storage sheet 38. Fig.19 Another structure of a metal plate 37 and a heat storage sheet 38 is shown as an example. Fig.19 The metal plate 37 is fixed between the semiconductor cooling sheet 33 and the bare chip 32, the first pole 321 of the bare chip 32 is electrically connected to the substrate 31, the second pole 322 of the bare chip 32 is electrically connected to the metal plate 37, and the third connecting line 353 electrically connects the metal plate 37 and the third pin 363. In the example where the power module 3 further includes a heat storage sheet 38, the heat storage sheet 38 is located in the packaging shell 34 and fixed on the second surface 332 of the semiconductor cooling sheet 33, and the heat storage sheet 38 is used to absorb the heat of the second surface 332.

[0100] In some other examples, in the example where the substrate 31 is a plate structure made of metal, the substrate 31 may also be located in the packaging shell 34, or at least partially extend into the packaging shell 34, and the positive electrode 335 and the negative electrode 336 of the semiconductor cooling plate 33 are electrically connected to the corresponding pins 36 through the corresponding connecting wires 35.

[0101] Fig. 20 The structure of another power module 3 is also shown as an example. Fig. 20 In the example shown, the substrate 31, the bare chip 32 and the semiconductor cooling sheet 33 are all located in the packaging shell 34. The substrate 31 can be a plate structure made of metal, the bare chip 32 is fixed on the substrate 31, and the positive electrode 335 and the negative electrode 336 of the semiconductor cooling sheet 33 are electrically connected to the corresponding pins 36 through the corresponding connecting wires 35.

[0102] Furthermore, in some examples, each power module 3 may include a plurality of dies 32 , and the plurality of dies 32 may include at least one FRD (Fast Recovery Diode) die to improve the efficiency and reliability of the power module 3 .

[0103] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A power conversion device, characterized in that: The power conversion device comprises a device housing and a power module; The device shell is used to accommodate the power module, and the power module is used to convert direct current from a photovoltaic module or an energy storage battery into alternating current. The power module includes: substrate; a bare chip, the bare chip being fixed to the substrate; A semiconductor refrigeration chip, the semiconductor refrigeration chip is fixed to the surface of the bare chip away from the substrate, the semiconductor refrigeration chip comprises a first surface and a second surface opposite to each other, the first surface is connected to the bare chip, and when the semiconductor refrigeration chip is powered on, the temperature of the first surface is lower than the temperature of the second surface; The substrate, the bare chip and the semiconductor cooling sheet are all located in the packaging shell, or the packaging shell is covered on the substrate, and the bare chip and the semiconductor cooling sheet are all located in the space enclosed by the packaging shell and the substrate.

2. The power conversion device according to claim 1, characterized in that: The power module further includes a first connecting line and a second connecting line; The surface of the substrate facing the bare chip includes a plurality of mutually insulated routing surfaces, the plurality of routing surfaces include a first routing surface and a second routing surface, the first connecting wire electrically connects the positive electrode of the semiconductor refrigeration plate and the first routing surface, and the second connecting wire electrically connects the negative electrode of the semiconductor refrigeration plate and the second routing surface.

3. The power conversion device according to claim 2, characterized in that: The power module further comprises a metal plate and a third connecting wire, wherein the metal plate is fixed between the semiconductor cooling chip and the bare chip; The plurality of routing planes further include a third routing plane and a fourth routing plane, the third routing plane is electrically connected to the first pole of the die, the metal plate is electrically connected to the second pole of the die, and the third connecting line electrically connects the metal plate and the fourth routing plane.

4. The power conversion device according to claim 2 or 3, characterized in that: The power module further includes a plurality of pins fixed to the packaging shell, each of the pins extending from inside the packaging shell to outside the packaging shell, and the first routing plane, the second routing plane and the third routing plane are each electrically connected to at least one of the pins.

5. The power conversion device according to claim 4, characterized in that: The packaging shell includes a packaging plate and a packaging cover. The substrate is fixed to the packaging plate with its surface facing away from the bare chip. The packaging cover is arranged on the packaging plate. The substrate, the bare chip and the semiconductor cooling plate are all located in a space enclosed by the packaging cover and the packaging plate.

6. The power conversion device according to claim 1, characterized in that: The power module further includes a plurality of pins, the plurality of pins are fixed to the packaging shell, each of the pins extends from inside the packaging shell to outside the packaging shell, and the plurality of pins include a first pin and a second pin; The power module further includes a first connecting wire and a second connecting wire, wherein the first connecting wire electrically connects the positive electrode of the semiconductor refrigeration plate and the first pin, and the second connecting wire electrically connects the negative electrode of the semiconductor refrigeration plate and the second pin.

7. The power conversion device according to claim 6, characterized in that: The power module also includes a metal plate and a third connecting wire; The metal plate is fixed between the semiconductor cooling sheet and the bare chip, the first pole of the bare chip is electrically connected to the substrate, and the second pole of the bare chip is electrically connected to the metal plate; The plurality of pins further include a third pin and a fourth pin, the third connecting wire electrically connects the metal plate and the third pin, and the fourth pin is electrically connected to the substrate.

8. The power conversion device according to claim 3 or 7, characterized in that: The bare chip is an insulated gate bipolar transistor, the first pole of the bare chip is a collector, and the second pole of the bare chip is an emitter; Alternatively, the bare chip is a metal-oxide semiconductor field effect transistor, the first electrode of the bare chip is a drain, and the second electrode of the bare chip is a source.

9. The power conversion device according to any one of claims 2 to 8, characterized in that: The power conversion device further includes a circuit board, which is fixed in the device shell, and the plurality of pins are electrically connected to the circuit board.

10. The power conversion device according to any one of claims 1 to 9, characterized in that: The power module also includes a heat storage plate, the material of which includes a phase change material or a metal. The heat storage plate is located in the packaging shell and fixed to the second surface of the semiconductor refrigeration plate, and the heat storage plate is used to absorb heat from the second surface.

11. The power conversion device according to any one of claims 1 to 10, characterized in that: The power conversion device further comprises a heat sink, the heat sink being at least partially located in the device housing, the heat sink having a plurality of channels for liquid or gas to flow through; The heat sink is fixed to a surface of the substrate facing away from the die, or the heat sink is fixed to the packaging shell.

Images