Peripheral exposure device and peripheral exposure method

Abstract

The invention relates to a peripheral exposure apparatus and a peripheral exposure method. The present invention reduces the possibility that a sublimate adheres to a subsequent substrate to be processed. A peripheral exposure apparatus according to one embodiment of the present disclosure is provided with: a substrate holding unit that holds and rotates a substrate; an exposure unit that irradiates a peripheral region of the surface of the substrate held by the substrate holding unit with light for exposure; and an exhaust unit that exhausts from an exhaust range that is set so as to include a portion corresponding to the irradiation position of the exposure unit on the outside of the peripheral edge of the substrate held by the substrate holding unit and that extends along the peripheral edge.

Description

Technical Field

[0001] The present disclosure relates to a peripheral exposure device and a peripheral exposure method. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that performs predetermined substrate processing including at least one of a peripheral exposure process for exposing a peripheral portion of a substrate and a substrate inspection process for inspecting the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-222086 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a peripheral exposure apparatus and a peripheral exposure method useful for reducing the possibility of sublimates adhering to a substrate to be processed subsequently.

[0008] Solutions for solving problems

[0009] A peripheral exposure device of a technical solution disclosed in the present invention comprises: a substrate holding portion, which holds and rotates a substrate; an exposure portion, which irradiates a peripheral area of ​​the surface of the substrate held by the substrate holding portion with exposure light; and an exhaust portion, which exhausts air from an exhaust range that is set to include a portion on the outside of the periphery of the substrate held by the substrate holding portion that corresponds to the irradiation position of the exposure portion and extends along the periphery.

[0010] Effects of the Invention

[0011] According to the present disclosure, there are provided a peripheral exposure apparatus and a peripheral exposure method useful for reducing the possibility of sublimates adhering to a substrate to be processed subsequently. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view schematically showing an example of a substrate processing apparatus.

[0013] Figure 2 It is a side view schematically showing an example of a substrate processing apparatus.

[0014] Figure 3 This is a side view schematically showing an example of a peripheral exposure device.

[0015] Figure 4It is a top view schematically showing an example of a peripheral exposure device.

[0016] Figure 5 (a) and Figure 5 (b) is a schematic diagram showing an example of an exposure unit in the peripheral exposure device.

[0017] Figure 6 It is a schematic diagram which shows an example of the lower exhaust part of a peripheral exposure apparatus.

[0018] Figure 7 (a) and Figure 7 (b) is a schematic diagram showing an example of a peripheral exhaust portion of the peripheral exposure apparatus.

[0019] Figure 8 (a) and Figure 8 (b) is a schematic diagram showing an example of a recovery member of the peripheral exhaust portion.

[0020] Fig. 9 (a) and Fig. 9 (b) is a schematic diagram showing an example of a gas ejection unit of the peripheral exposure apparatus.

[0021] Fig.10 This is a block diagram showing the hardware configuration of the control unit of the peripheral exposure device.

[0022] Fig.11 This is a flowchart showing an example of a peripheral exposure method.

[0023] Fig.12 It is a schematic diagram showing an example of the peripheral exhaust part of the peripheral exposure apparatus.

[0024] Fig.13 This is a diagram showing an example of a substrate in which a notch portion is formed.

[0025] Fig.14 (a) and Fig.14 (b) is a schematic diagram showing an example of a peripheral exhaust portion of the peripheral exposure apparatus.

[0026] Fig.15 It is a schematic diagram showing an example of the peripheral exhaust part of the peripheral exposure apparatus.

[0027] Fig.16 It is a schematic diagram showing an example of a recovery member of the peripheral exhaust section.

[0028] Fig.17 This is a schematic diagram showing an example of a connection structure between a recovery member and a suction member.

[0029] Fig.18It is a schematic diagram showing an example of the distribution of the ejection flow rate ejected from the gas ejection part.

[0030] Description of Reference Numerals

[0031] 1. Wafer processing system; W, wafer; Wa, surface; CP, center; 50, peripheral exposure device; 53, wafer holding part; 70, exposure part; IP, irradiation position; 83a, relative part; 110, 110A, 110B, 110C, peripheral exhaust part; B1, buffer space; 113, 115, exhaust port; 118, 118A, 118B, 180, suction member; 119, 189, suction port; 120, 120A, gas ejection part; B2, buffer space; 121, ejection port; θg, ejection angle; 150, control part. DETAILED DESCRIPTION

[0032] Hereinafter, a wafer processing system as a substrate processing device of the present embodiment will be described with reference to the accompanying drawings. In addition, in this specification, elements having substantially the same functional structure are marked with the same reference numerals and repeated descriptions are omitted. An orthogonal coordinate system defined by an X-axis, a Y-axis, and a Z-axis is shown in some drawings. In the following embodiments, the Z-axis corresponds to the up-down direction, and the X-axis and the Y-axis correspond to the horizontal direction.

[0033] <Wafer processing system>

[0034] First, the configuration of a wafer processing system according to this embodiment will be described. Figure 1 , Figure 2 They are respectively a plan view and a front view schematically showing the structure of the wafer processing system 1. In this embodiment, the wafer processing system 1 is described as an example of a photolithography processing system that performs a resist film formation process and a development process on a wafer W (substrate).

[0035] like Figure 1 As shown, the wafer processing system 1 has: a box transfer station 2, which carries in and out a box C containing a plurality of wafers W; and a processing station 3, which has a plurality of various processing devices that perform prescribed processing on the wafers W. Moreover, the wafer processing system 1 has a structure that connects the box transfer station 2, the processing station 3 and the interface station 4 as a whole. The interface station 4 transfers the wafer W with an exposure device (not shown), and the exposure device is adjacent to the interface station 4 on the side opposite to the processing station 3. In addition, as shown in FIG. Figure 1 As shown, two processing stations 3 are provided between the box delivery station 2 and the interface station 4, but one processing station may be provided, or three or more processing stations may be provided.

[0036] The cassette delivery station 2 is provided with a plurality of cassette mounting tables 21 and wafer conveying devices 22 and 23. The cassette delivery station 2 uses the wafer conveying device 22 or 23 to convey the wafer W between the cassette C mounted on the mounting table 21 and the processing station 3. To this end, the wafer conveying devices 22 and 23 each have a driving mechanism in directions such as the X direction, the Y direction, the up-down direction, and around the vertical axis (θ direction) as required, and may also have a driving mechanism in all directions.

[0037] At least one of the wafer conveying devices 22 and 23 can deliver the wafer W to the cassette C, and can also deliver the wafer W to the processing station 3. In addition, the delivery action of delivering the wafer W to the processing station 3 refers to, for example, delivering the wafer W to the third module G3, which is provided with a delivery device that can be approached by the wafer conveying device 33 in the processing station 3 described later. The third module G3 may also be provided with a plurality of delivery devices (not shown) arranged in the vertical direction.

[0038] Furthermore, an inspection device (not shown) for inspecting the wafer W may be provided at a position accessible to either of the wafer conveyance devices 22 and 23 .

[0039] The processing station 3 is provided with a plurality of modules, for example, a first module G1, a second module G2, and a fourth module G4. Figure 2 As shown in FIG. 1 , a plurality of layers 31 including the first module G1 and the second module G2 are stacked in the vertical direction. Figure 1 The first module G1 is provided on the negative side of the X direction of the processing station 3. Figure 1 The second module G2 is provided on the positive X-direction side of the processing station 3. Figure 1 The fourth module G4 is provided at the connection part between the processing station 3 and the processing station 3. The fourth module G4 may also be provided with a plurality of handover devices arranged in the vertical direction. In addition, the third module G3 may also be provided in the processing station 3.

[0040] The first module G1 includes a plurality of processing devices, such as a patterning film forming device and a developing device, which are not shown. The patterning film forming device may include an anti-reflection film forming device in addition to a resist film forming device.

[0041] For example, a plurality of processing devices are arranged in a horizontal direction. In addition, the number, arrangement, and type of these processing devices can be arbitrarily selected.

[0042] In these patterning film forming apparatuses and developing processing apparatuses, for example, an operation of supplying a predetermined processing liquid or an operation of supplying a predetermined gas onto the wafer W is performed. Thus, in the patterning film forming apparatus, a resist film used as a mask when forming a pattern of a film on the lower layer side, an anti-reflection film for efficiently performing a light irradiation process such as an exposure process is formed, etc. On the other hand, in the developing processing apparatus, a part of the resist film after exposure is removed to form a concave-convex shape as the above-mentioned mask.

[0043] For example, in the second module G2, heat treatment devices (not shown) for performing heat treatment such as heating and cooling of the wafer W are arranged in the vertical direction and the horizontal direction. Figure 2 A hydrophobizing device (not shown) for performing hydrophobizing treatment to improve the adhesion between the resist solution and the wafer W and a peripheral exposure device 50 for exposing the outer periphery of the wafer W are arranged in the longitudinal (Z direction) and horizontal directions. The number and arrangement of these heat treatment devices, hydrophobizing devices, and peripheral exposure devices 50 can also be arbitrarily selected.

[0044] like Figure 1 As shown in FIG. 1 , a region sandwiched between the first module G1 and the second module G2 in a plan view forms a wafer conveyance region 32. In the wafer conveyance region 32, for example, a wafer conveyance device 33 is disposed.

[0045] The wafer conveying device 33 has a conveying arm that can move freely in the Y direction, the front-back direction, the θ direction, and the up-down direction. The conveying arm of the wafer conveying device 33 can move within the wafer conveying area 32 to convey the wafer W to the surrounding first module G1, second module G2, third module G3, and fourth module G4. Figure 1 As shown, when there are multiple processing stations 3, the wafer conveying device 33 set at the processing station 3 located on the interface station 5 side can not only convey the wafer W to the 1st module G1, the 2nd module G2, and the 4th module G4, but also can convey the wafer W to a specified device in the 5th module G5 described later.

[0046] For example, a plurality of wafer conveying devices 33 are arranged vertically. One wafer conveying device 33 can convey the wafer W to a device at a predetermined height of a plurality of layers 31 located on the upper side of a plurality of layers 31 stacked vertically. Other wafer conveying devices 33 can convey the wafer W to a device at a predetermined height of a plurality of layers 31 located below these layers 31. A plurality of wafer conveying areas 32 are provided in such a manner that such conveyance of the wafer W can be performed. In addition, the number of wafer conveying devices 33 and the number of layers 31 corresponding to one wafer conveying device 33 can be arbitrarily selected, for example, a wafer conveying device 33 is provided for each layer 31.

[0047] The wafer transfer area 32 or the first module G1 or the second module G2 may also include a shuttle device (not shown) that linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0048] The interface station 4 is provided with a fifth module G5 having a plurality of handover devices and wafer conveying devices 41 and 42. The interface station 4 uses a wafer conveying device 41 or 42 to convey wafer W between the fifth module G5 where the wafer W is handed over by the wafer conveying device 33 and the exposure machine. Therefore, the wafer conveying devices 41 and 42 each have a driving mechanism in directions such as the X direction, the Y direction, the up and down direction, and around the vertical axis (θ direction) as required, and may also have a driving mechanism in all directions. At least one of the wafer conveying devices 41 and 42 is capable of supporting wafer W and conveying wafer W between the handover device in the fifth module G5 and the exposure machine.

[0049] A cleaning device for cleaning the surface of the wafer W and the above-mentioned peripheral exposure device 50 may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0050] As described above, the inspection device can also be arranged in the box transfer station 2, but it can also be arranged in any of the conveying arms ( Figure 1 or Figure 2 The peripheral exposure device 50 may have a function of inspecting the wafer W in addition to the exposure function.

[0051] The above wafer processing system 1 is provided with a control device 100. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of wafers W in the wafer processing system 1. In addition, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing devices, conveying devices, etc. to realize the wafer processing in the wafer processing system 1. In addition, the above-mentioned program can also be recorded in a computer-readable storage medium H, and loaded from the storage medium H to the control device 100.

[0052] <Operation of Wafer Processing System>

[0053] The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0054] First, a cassette C containing a plurality of wafers W is brought into the cassette delivery station 2 of the wafer processing system 1 and placed on the cassette stage 21. Next, the wafers W in the cassette C are sequentially taken out by the wafer transport device 22 or 23 and transported to the delivery device of the third module G3.

[0055] The wafer W transported to the transfer device of the third module G3 is supported by the wafer transport device 33 and transported to the hydrophobic treatment device provided in the second module G2 for hydrophobic treatment. Next, the wafer W is transported to the resist film forming device by the wafer transport device 33 to form a resist film on the wafer W, and then transported to the heat treatment device for pre-baking treatment, and then transported to the transfer device of the fifth module G5. In addition, in the case of Figure 1 , Figure 2 In the case where there are multiple processing stations 3, the wafer W is placed in the delivery device of the fourth module G4 before being delivered to the delivery device of the fifth module G5, and then delivered between multiple wafer delivery devices 33. In addition, the wafer W is delivered to the peripheral exposure device 50 by the wafer delivery device 33, and the peripheral portion of the wafer W is exposed.

[0056] The wafer W conveyed to the transfer device of the fifth module G5 is conveyed to the exposure machine by the wafer conveying devices 41 and 42, and is subjected to exposure processing in a predetermined pattern. In addition, the wafer W may be cleaned by a cleaning device before the exposure processing.

[0057] The wafer W exposed by the exposure machine is transported to the transfer device of the fifth module G5 by the wafer transport devices 41 and 42. Thereafter, the wafer is transported to the heat treatment device by the wafer transport device 33 and subjected to a post-exposure bake process.

[0058] The wafer W that has undergone the post-exposure baking process is transported by the wafer transport device 33 to the developing device for development. After the development is completed, the wafer W is transported by the wafer transport device 33 to the heat treatment device 40 for post-bake processing.

[0059] Thereafter, the wafer W is transported to the delivery device of the third module G3 by the wafer transport device 33 and transported to the cassette C on the predetermined cassette stage 21 by the wafer transport device 22 or 23 of the cassette delivery station 2. In this way, a series of photolithography steps are completed.

[0060] In addition, the wafer processing system in the present disclosure is not limited to the structure and operation described above. For example, in the above-mentioned embodiment, the case where the wafer W is handed over between the interface station 4 and the exposure machine is described, but it is not necessary to be directly connected to the exposure machine. In this case, for example, after the wafer W is transported from the box handover station 2 to the processing station 3 and the necessary processing is performed, it is transported to the box handover station 2 again to be sent to the outside. In addition, for unnecessary devices among the devices listed as processing devices, it is also possible not to set up or not to perform processing in the device.

[0061] (Peripheral exposure device)

[0062] Next, refer to Figures 3 to 10 An example of the peripheral exposure device 50 included in the wafer processing system 1 will be described. Figure 3 It is a side view including a partial cross section of the peripheral exposure device. Figure 4 It is a top view including a partial cross section of the peripheral exposure device 50 . Figure 5 (a) and Figure 5 (b) are a longitudinal sectional view and a bottom view respectively showing an irradiation unit included in the peripheral exposure device 50. Figure 6 It is a top view showing a lower exhaust portion included in the edge exposure device 50 . Figure 7 (a) is a plan view showing a part of the components included in the edge exposure device 50. Figure 7 (b) is a longitudinal sectional view of the peripheral exhaust portion included in the peripheral exposure device 50. Figure 8 (a) and Figure 8 (b) are a side view and a perspective view respectively showing a part of the components of the external exhaust part. Fig. 9 (a) and Fig. 9 (b) are side views showing the gas ejection portion included in the edge exposure device 50. Fig.10 1 is a block diagram showing a hardware configuration of a control unit included in the peripheral exposure device 50 .

[0063] The peripheral exposure device 50 is a device for performing an exposure process on the peripheral area of ​​the surface of the wafer W (hereinafter referred to as "surface Wa"). The peripheral area of ​​the surface Wa is an annular area formed by the periphery of the surface Wa and its vicinity. The peripheral exposure device 50 performs an exposure process on the peripheral area of ​​the surface Wa of the wafer W, for example, to remove the peripheral portion of the resist film formed on the surface Wa. As described above, in addition to performing an exposure process on the peripheral area of ​​the surface Wa of the wafer W on which the resist film is formed, the peripheral exposure device 50 may also have a function of inspecting the wafer W.

[0064] The peripheral exposure device 50 includes a housing 51, a conveying unit 52, an exposure unit 70, and an inspection unit 90. The housing 51 functions as a shell to accommodate at least a portion of the components included in the peripheral exposure device 50. The housing 51 may also be formed to extend along the X-axis direction. A delivery port 51a for delivering and receiving the wafer W is formed at one end of the housing 51 in the X-axis direction. The wafer W is delivered into the interior of the housing 51 through the delivery port 51a, and the wafer W is delivered from the interior of the housing 51 through the delivery port 51a.

[0065] The transport unit 52 performs an operation of holding a wafer W to be processed and an operation of transporting the wafer W. The transport unit 52 includes, for example, a wafer holding unit 53 (substrate holding unit), a movement drive unit 55 , and a sensor unit 61 .

[0066] The wafer holding part 53 holds the wafer W and rotates it. That is, the wafer holding part 53 rotates the wafer W while holding the wafer W. The wafer holding part 53 holds the wafer W in a manner such that the surface Wa of the wafer W is horizontal, and rotates the wafer W around a vertical axis. In one example, the wafer holding part 53 includes a mounting table 53a and a rotation drive part 53b.

[0067] The back side of the wafer W opposite to the surface Wa is placed on the stage 53a, and the stage 53a holds the wafer W placed thereon. The stage 53a may also be arranged in the space below (e.g., the space in the lower half) in the internal space formed by the housing 51. The stage 53a may also hold the wafer W horizontally by adsorption. The stage 53a is configured to be rotatable, and is rotated around a vertical axis by a rotation drive unit 53b. The stage 53a holds the wafer W in such a way that the rotation axis of the rotation drive unit 53b is roughly consistent with the center CP of the wafer W. Thus, the wafer W held on the stage 53a is rotated around a vertical axis passing through the center CP of the wafer W or its vicinity by the rotation drive unit 53b. The rotation drive unit 53b includes a drive source such as an electric motor.

[0068] The moving drive unit 55 moves the wafer holding unit 53 in one horizontal direction. Figure 3 In the example shown, the moving drive unit 55 moves the wafer holding unit 53 along the X-axis direction. The moving drive unit 55 includes, for example, a ball screw mechanism 56 and a pair of guide rails 57 (see also Figure 4 ).

[0069] The ball screw mechanism 56 is provided at the bottom of the housing 51 in a manner extending from the vicinity of one end of the housing 51 in the X direction to the other end of the housing 51 in the X direction. The ball screw mechanism 56 includes a lead screw 58 and a moving motor 59. The lead screw 58 is a shaft member engaged (threadedly coupled) with the wafer holding portion 53 in a manner that enables the wafer holding portion 53 to move in the X-axis direction. The moving motor 59 rotates the lead screw 58 around an axis along the extending direction thereof.

[0070] A pair of guide rails 57 are arranged in a direction (Y-axis direction) orthogonal to the extension direction (X-axis direction) of the ball screw mechanism 56 so as to sandwich the ball screw mechanism 56. The guide rails 57 are arranged in parallel with the ball screw mechanism 56. The guide rails 57 are provided at the bottom of the housing 51 so as to extend from the vicinity of one end of the housing 51 in the X-axis direction to the vicinity of the other end of the housing 51 in the X-axis direction. The guide rails 57 support the wafer holding portion 53 in a movable state.

[0071] The lead screw 58 is driven to rotate by the moving motor 59, so that the wafer holding part 53 (the mounting table 53a and the rotation drive part 53b) reciprocates along the X-axis direction. The moving drive part 55 may also include a cylinder mechanism or a belt mechanism instead of the ball screw mechanism 56. By driving the moving drive part 55, the wafer holding part 53 (the mounting table 53a) can move between a first position P1 at one end of the housing 51 in the X-axis direction and a second position P2 at the other end of the housing 51 in the X-axis direction. In the X-axis direction, the feed-in / feed-out port 51a, the first position P1, and the second position P2 of the housing 51 are arranged in this order.

[0072] The sensor unit 61 obtains information indicating the rotational position of the wafer W held by the wafer holding unit 53. The sensor unit 61 may also have a function of detecting an identification portion (e.g., a notch portion) indicating a reference position of the wafer W on the mounting table 53a in the circumferential direction. The sensor unit 61 includes, for example, a light emitting element 62 and a light receiving element 63. The light emitting element 62 and the light receiving element 63 are configured to clamp the peripheral portion of the wafer W on the mounting table 53a from top to bottom when the wafer holding unit 53 is configured at the second position P2. The sensor unit 61 detects the identification portion, and based on the detection result, the mounting table 53a is rotated by the rotation drive unit 53b, so that the rotational position (angle) of the wafer W can be aligned.

[0073] The exposure unit 70 irradiates the peripheral region of the surface Wa of the wafer W held by the wafer holding unit 53 with exposure light. For example, when the wafer holding unit 53 is arranged at the second position P2, the exposure unit 70 irradiates the peripheral region of the surface Wa of the wafer W with exposure light while the wafer W is rotated by the rotation drive unit 53b. In one example, the exposure unit 70 includes a light emitting member 71, a light guide member 72, and an irradiation member 73.

[0074] The light emitting member 71 includes a light source, and generates light for exposing the peripheral area of ​​the surface Wa. The light source included in the light emitting member 71 is, for example, an ultra-high pressure mercury lamp. The light emitting member 71 may also be arranged outside the housing 51. The light guide member 72 is a member that connects the light emitting member 71 and the irradiation member 73 and guides the light for exposure generated in the light emitting member 71 to the irradiation member 73. The light guide member 72 is, for example, an optical fiber.

[0075] The irradiation member 73 irradiates the peripheral area of ​​the surface Wa of the wafer W with the exposure light guided by the light guide member 72. Figure 5 (a) and Figure 5 As shown in (b), the irradiation member 73 includes a housing 83, an incident slit 77, an incident lens 78, a reflector 79, an exit lens 80, an exit slit 81, and a shutter 82. The housing 83 accommodates the incident lens 78, the reflector 79, the exit lens 80, and the shutter 82. The incident slit 77 and the exit slit 81 are openings formed in the housing 83.

[0076] The incident slit 77 is formed in a rectangular shape, and adjusts the cross-sectional shape of the light beam when the light guided by the light guide member 72 is incident on the irradiation member 73 (inside the housing 83). The light incident on the inside of the housing 83 through the incident slit 77 is guided to the exit slit 81 through the incident lens 78, the reflector 79, and the exit lens 80 while changing its direction and the shape of the light beam.

[0077] The exit slit 81 is formed in a facing portion 83a in the housing portion 83. The facing portion 83a faces vertically downward, and at least a portion of the facing portion 83a faces the peripheral portion of the surface Wa of the wafer W held by the wafer holding portion 53. The exit slit 81 is formed in a rectangular shape, and adjusts the cross-sectional shape of the light beam when the light passing through the exit lens 80 is emitted from the irradiation member 73 (from the inside of the housing portion 83 to the outside).

[0078] The shutter 82 switches between a state in which light from the light guide member 72 is transmitted to the inside of the housing 83 and a state in which light from the light guide member 72 is blocked to the inside of the housing 83. The shutter 82 may also have a function of adjusting the opening of the incident slit 77 when light from the light guide member 72 is transmitted to the inside of the housing 83. The open / closed state, or the open / closed state and the opening of the shutter 82 are controlled by the control unit 150.

[0079] In the irradiation member 73, the exposure light guided by the light guide member 72 is emitted from the exit slit 81 and irradiated to a local range of the peripheral region of the surface Wa on which the resist film is formed of the wafer W. In this state, the wafer W is rotated by the rotation drive unit 53b, so that the entire peripheral region of the surface Wa of the wafer W can be irradiated with the exposure light (i.e., peripheral exposure).

[0080] The irradiation member 73 may also include a gas ejection portion 85. The gas ejection portion 85 ejects an inert gas from one or more ejection ports (not shown) disposed around the exit slit 81. The inert gas ejected from the gas ejection portion 85 is, for example, nitrogen gas. The gas ejection portion 85 ejects the inert gas introduced into the interior of the housing portion 83 downward from one or more ejection ports disposed around the exit slit 81. By providing the gas ejection portion 85, the amount of sublimates generated from the resist film due to irradiation with the exposure light and adhering to the opposing portion 83a can be reduced.

[0081] return Figure 3 and Figure 4 , the inspection unit 90 obtains information for inspecting the wafer W. The inspection unit 90 has a photographing unit 91. The photographing unit 91 is a unit capable of photographing the surface Wa of the wafer W. The photographing unit 91 is arranged in the internal space of the housing 51 at a position above the wafer W held by the conveying unit 52. The photographing unit 91 includes, for example, a camera 92, a half mirror 93, and a lighting module 94.

[0082] The camera 92 is fixed to the side wall of the housing 51 on the opposite side to the side wall where the delivery port 51a is formed in the internal space of the housing 51. The camera 92 is, for example, a CCD camera. The semi-transparent mirror 93 and the lighting module 94 are arranged near the center of the housing 51 in the X-axis direction. The light emitted from the lighting module 94 passes through the semi-transparent mirror 93 and travels toward the bottom of the semi-transparent mirror 93. The reflected light from the object existing below the semi-transparent mirror 93 is reflected by the semi-transparent mirror 93 and enters the camera 92. Thus, the camera 92 can photograph the object illuminated by the lighting module 94 below the semi-transparent mirror 93.

[0083] In the peripheral exposure device 50, the imaging unit 91 scans the surface Wa of the wafer W on the mounting table 53a while the wafer holding part 53 moves along the guide rail 57 in the X-axis direction. The imaging unit 91 may also scan the surface Wa while the wafer holding part 53 (wafer W) moves from the first position P1 to the second position P2, or from the second position P2 to the first position P1. The imaging unit 91 scans the surface Wa while the wafer holding part 53 moves between the first position P1 and the second position P2, thereby being able to capture the entire area of ​​the surface Wa.

[0084] The peripheral exposure device 50 has a peripheral exhaust section 110 (exhaust section) and a gas ejection section 120. The peripheral exhaust section 110 exhausts gas from a position outside the periphery of the wafer W held by the wafer holding section 53 at least during the peripheral exposure period. The peripheral exposure period is a period during which the exposure section 70 irradiates the peripheral area of ​​the surface Wa of the wafer W with light for exposure from the exposure section 70 while the wafer W is rotated by the wafer holding section 53. The gas ejection section 120 ejects an inactive gas from the inner side of the periphery of the wafer W between the irradiation member 73 of the exposure section 70 and the wafer W at least during the peripheral exposure period. Details of the peripheral exhaust section 110 and the gas ejection section 120 will be described later.

[0085] The peripheral exposure device 50 includes a lower exhaust unit 130. The lower exhaust unit 130 exhausts the space in the housing 51 at a position lower than the wafer W held by the wafer holding unit 53. The lower exhaust unit 130 may also be disposed at a position lower than the wafer W held by the wafer holding unit 53, such as Figure 6 As shown, it is formed to extend along the X-axis direction. The peripheral exposure device 50 may include a pair of lower exhaust parts 130, and the pair of lower exhaust parts 130 may be respectively arranged near a pair of side walls of the housing 51 that face each other in the Y-axis direction.

[0086] A plurality of exhaust ports arranged along the X-axis direction may be formed in each of the pair of lower exhaust parts 130. The gas in the housing 51 is discharged from the internal space of the housing 51 to the outside of the housing 51 through the plurality of exhaust ports of the lower exhaust part 130. Each of the pair of lower exhaust parts 130 may be connected to an exhaust pump via an exhaust passage provided outside the housing 51.

[0087] exist Figure 7 In (a), the positional relationship between the wafer W held by the wafer holding portion 53 at the second position P2, the irradiation member 73 (exit slit 81), the peripheral exhaust portion 110, and the gas ejection portion 120 when viewed from above is illustrated. Hereinafter, the peripheral exhaust portion 110 and the gas ejection portion 120 will be described in the case where the wafer holding portion 53 is arranged at the second position P2. The peripheral exhaust portion 110 may also exhaust from an exhaust range that is set to include a portion corresponding to the irradiation position IP of the exposure portion 70 outside the periphery of the wafer W held by the wafer holding portion 53 and extends along the periphery.

[0088] In a plan view (viewed from above), the peripheral exhaust portion 110 is arranged at a position outside the periphery of the wafer W held by the wafer holding portion 53. The irradiation position IP of the exposure portion 70 refers to a position where the exposure portion 70 irradiates the peripheral region of the surface Wa of the wafer W with light for exposure. The irradiation position IP of the exposure portion 70 may also be defined as an arbitrary position overlapping with the exit slit 81 formed in the irradiation member 73 of the exposure portion 70 in a plan view, for example, the center position of the exit slit 81.

[0089] The portion corresponding to the irradiation position IP included in the above-mentioned exhaust range refers to a portion intersecting with an imaginary line IL1 passing through the center CP and the irradiation position IP on the circumference around the center CP of the wafer W held by the wafer holding portion 53. Here, one direction in the rotation direction of the wafer W performed by the wafer holding portion 53 is defined as the "rotation direction R1", and the other direction is defined as the "rotation direction R2". When viewed from above, the rotation direction R1 is the clockwise direction, and the rotation direction R2 is the counterclockwise direction. In addition, in this specification, the terms "upstream" and "downstream" are used with reference to the rotation direction R1 (one direction). That is, when the wafer W rotates in the rotation direction R1, if one portion of the periphery of the wafer W (such as the above-mentioned notch portion) is focused on, the one portion moves from upstream to downstream on the circumference around the center CP.

[0090] The peripheral exhaust unit 110 may also exhaust air from at least a portion corresponding to the irradiation position IP and a region downstream of the portion in the outer side of the peripheral edge of the wafer W held by the wafer holding unit 53. The exhaust range of the peripheral exhaust unit 110 may include, for example, a first sub-area located upstream of the portion corresponding to the irradiation position IP and a second sub-area located downstream of the portion corresponding to the irradiation position IP. The second sub-area may also be larger than the first sub-area.

[0091] The peripheral exhaust section 110 includes, for example, a recovery member 112 and a suction member 118. The recovery member 112 is a member that forms a plurality of exhaust ports 113 defining the exhaust range and a buffer space B1 (buffer space for exhaust) connected to the plurality of exhaust ports 113. Figure 8 (a) and Figure 8 As shown in (b), a plurality of exhaust ports 113 are arranged along the periphery of the wafer W held by the wafer holding portion 53. The plurality of exhaust ports 113 are arranged at intervals from each other. The range between the exhaust port 113 located at the most upstream and the exhaust port 113 located at the most downstream is equivalent to the above-mentioned exhaust range. In addition, the line on which the plurality of exhaust ports 113 are arranged does not need to coincide with the circumference of the center CP of the wafer W, and may also be located on a circumference centered at a position different from the center CP (for example, a position near the center CP).

[0092] Alternatively, the total value of the opening areas of one or more exhaust ports 113 arranged in the second partition downstream of the portion corresponding to the irradiation position IP may be greater than the total value of the opening areas of one or more exhaust ports 113 arranged in the first partition upstream of the portion corresponding to the irradiation position IP. In the case where the exhaust ports 113 are located at the boundary between the first partition and the second partition, a portion of the exhaust ports 113 located in the first partition is added to the opening area of ​​the first partition, and a remaining portion of the exhaust ports 113 located in the second partition is added to the opening area of ​​the second partition. In one example, the number of exhaust ports 113 arranged in the second partition is greater than the number of exhaust ports 113 arranged in the first partition.

[0093] In the up and down directions, Figure 8 As shown in (a), multiple exhaust ports 113 may also be arranged at the same height position as each other. When focusing on one exhaust port 113, in the up-down direction, the height position of at least a part of the exhaust port 113 may also be the same as the height position of at least a part of the wafer W held by the wafer holding portion 53. In the up-down direction, the height position of at least a part of the wafer W may be either the same height position as at least a part of the lower half of the exhaust port 113 or the same height position as at least a part of the upper half of the exhaust port 113. From the viewpoint of further improving the recovery efficiency of the sublimates, in the up-down direction, the height position of the area between the surface Wa of the wafer W held by the wafer holding portion 53 and the relative portion 83a may also be the same height position as near the center of the exhaust port 113 in the up-down direction.

[0094] and Figure 8 Unlike the example shown in (a) of FIG. 1 , the height position of the exhaust port 113 in the vertical direction may be different from the height position of the wafer W held by the wafer holding portion 53. In the vertical direction, the exhaust port 113 may be located above the wafer W or below the wafer W. The distance (shortest distance) between the exhaust port 113 and the wafer W in the vertical direction may be less than the size of the exhaust port 113 in the vertical direction.

[0095] In the vertical direction, the height position of at least a part of the exhaust port 113 may be the same as the height position of the facing portion 83a of the irradiation member 73. Figure 8 Unlike the example shown in (a), the exhaust port 113 may be located above or below the relative portion 83a in the vertical direction. When the relative portion 83a is not a plane, the height position of the relative portion 83a is defined as the height position of the lowest part (the lowest part) of the relative portion 83a.

[0096] The buffer space B1 may also extend in the first direction and the second direction along the surface Wa of the wafer W held by the wafer holding portion 53. The first direction is the direction in which the above-mentioned imaginary line IL (line) passing through the center CP of the wafer W held by the wafer holding portion 53 and the irradiation position IP of the exposure portion 70 extends. The second direction is a direction orthogonal to the first direction. The first direction may also be the X-axis direction, and the second direction may also be the Y-axis direction. The following description will be given with the case where the first direction is the X-axis direction and the second direction is the Y-axis direction.

[0097] The recovery member 112 includes a bottom portion 112a, a side wall 112b, and an upper portion 112c. Figure 8 (a) and Figure 8 In (b), the upper portion 112c is omitted. The bottom portion 112a is formed in a plate shape, and a portion of its periphery is curved in a concave manner toward a direction away from the center CP of the wafer W held by the wafer holding portion 53. The other portions of the periphery of the bottom portion 112a are formed in a straight line. The bottom portion 112a defines the lower surface of the buffer space B1.

[0098] The side wall 112b is formed to extend upward from the periphery of the bottom 112a and its vicinity. The side wall 112b defines the side of the buffer space B1. A plurality of exhaust ports 113 are formed in a portion of the side wall 112b corresponding to a portion of the curved periphery of the bottom 112a. The upper portion 112c is connected to the upper portion of the side wall 112b and defines the upper surface of the buffer space B1. The plurality of exhaust ports 113 formed in the side wall 112b connect the buffer space B1 and the space outside the buffer space B1. When viewed from above, the plurality of exhaust ports 113 are opposite to the periphery of the wafer W held by the wafer holding portion 53.

[0099] The suction member 118 sucks the buffer space B1 through a suction port 119 opened in the buffer space B1. The suction member 118 is, for example, a pipe formed in a cylindrical shape. Figure 7 As shown in (b), the bottom of the suction member 118 may overlap with the upper portion 112c of the recovery member 112, and a suction port 119 connecting the buffer space B1 and the flow path in the suction member 118 may be formed in the overlapping portion. The end of the pipe of the suction member 118 may also be connected to an exhaust pump via an exhaust passage provided outside the housing 51.

[0100] The buffer space B1 is sucked by the suction member 118, so that the gas in the buffer space B1 is discharged to the outside of the housing 51 (peripheral exposure device 50). Along with this, the gas around these exhaust ports is taken into the buffer space B1 through the multiple exhaust ports 113. As described above, the peripheral exhaust unit 110 exhausts gas via the multiple exhaust ports 113 and the buffer space B1. The peripheral exhaust unit 110 exhausts gas from the above-mentioned exhaust range around the periphery of the wafer W, so that during the above-mentioned peripheral exposure, sublimates generated from the resist film due to the irradiation of the exposure light can be recovered.

[0101] When viewed from a direction perpendicular to the surface Wa of the wafer W held by the wafer holding portion 53 (vertically upward), at least a portion of the buffer space B1 is formed such that as the distance from the suction port 119 in the Y-axis direction increases, the size in the X-axis direction decreases. That is, in at least a portion of the buffer space B1, in the Y-axis direction, when the buffer space B1 is viewed sequentially from the suction port 119, the farther away from the suction port 119, the smaller the size in the X-axis direction (the size of the space) becomes.

[0102] exist Figure 7 In the example shown in (a), the portion of the buffer space B1 between the imaginary line IL and the suction port 119 is formed so that the greater the distance in the Y-axis direction from the suction port 119, the smaller the size in the X-axis direction. Assuming that the size of the buffer space B1 in the X-axis direction is set constant regardless of the position in the Y-axis direction, there is a tendency that the exhaust volume is larger at the exhaust port 113 located near the suction port 119, and the exhaust volume is smaller at the exhaust port 113 located far from the suction port 119. In contrast, by increasing the space at the position close to the suction port 119 and reducing the space at the position far from the suction port 119, the difference in exhaust volume caused by the distance from the suction port 119 can be reduced.

[0103] In the Y-axis direction, the irradiation position IP and the suction port 119 may also be located between the two ends of the buffer space B1. For the sake of convenience, the end on the left side of the two ends of the buffer space B1 when the irradiation position IP is observed from the center CP is called the "upper end", and the other end on the right side is called the "lower end". In the Y-axis direction, the upper end of the buffer space B1, the irradiation position IP, the suction port 119, and the lower end of the buffer space B1 are arranged in this order.

[0104] In the Y-axis direction, the irradiation position IP may be set between the upper end (first end) and the lower end (second end) of the buffer space B1, close to the upper end. That is, the distance (shortest distance) between the upper end of the buffer space B1 and the irradiation position IP in the Y-axis direction may be smaller than the distance (shortest distance) between the lower end of the buffer space B1 and the irradiation position IP in the Y-axis direction.

[0105] In the Y-axis direction, the suction port 119 may also be located between the upper end and the lower end of the buffer space B1, close to the lower end. That is, the distance in the Y-axis direction (shortest distance) between the upper end of the buffer space B1 and the suction port 119 may also be greater than the distance in the Y-axis direction (shortest distance) between the lower end of the buffer space B1 and the suction port 119. In the Y-axis direction, the suction port 119 may also be arranged near the lower end of the buffer space B1. For example, in the Y-axis direction, the distance between the suction port 119 and the lower end of the buffer space B1 is smaller than the distance between the suction port 119 and the center of the buffer space B1 in the Y-axis direction.

[0106] The gas ejection unit 120 ejects an inactive gas Gn from a position inside the periphery of the wafer W held by the wafer holding unit 53 toward between the surface Wa of the wafer W held by the wafer holding unit 53 and the relative portion 83a of the exposure unit 70 that is opposite to the surface Wa. When viewed from above, the gas ejection unit 120 may be located on the imaginary line IL1, disposed between the center CP and the irradiation position IP. The gas ejection unit 120 may also be fixed relative to the irradiation member 73 by means of a fixing member. The inactive gas Gn ejected from the gas ejection unit 120 is, for example, nitrogen. The ejection amount of the gas from the gas ejection unit 120 (the ejection amount per unit time) may also be greater than the ejection amount of the gas from the gas ejection unit 85 in the irradiation member 73 (the ejection amount per unit time).

[0107] like Fig. 9 (a) and Fig. 9 As shown in (b), the gas ejection part 120 has, for example, a main body 125 and a plurality of ejection ports 121. The main body 125 is formed in a block shape. The plurality of ejection ports 121 are formed in the main body 125 and are openings for ejecting the inert gas Gn. The plurality of ejection ports 121 are arranged along the Y-axis direction. The height positions between the plurality of ejection ports 121 may also be the same.

[0108] A buffer space B2 (buffer space for ejection) connected to a plurality of ejection ports 121 is formed inside the main body 125. The buffer space B2 is connected to the plurality of ejection ports 121 via ejection passages 122. The gas ejection portion 120 includes a gas supply portion 129 for supplying an inert gas Gn to the buffer space B2. By supplying the inert gas Gn from the gas supply portion 129 to the buffer space B2, the inert gas Gn is ejected from the plurality of ejection ports 121.

[0109] The main body 125 is arranged so that the plurality of ejection ports 121 face the irradiation member 73 of the exposure unit 70. At least a portion of the plurality of ejection ports 121 is formed so that the inert gas Gn ejected from the ejection ports 121 passes through the region between the opposing portion 83a and the surface Wa of the wafer W held by the wafer holding portion 53 and flows toward the outside of the wafer W. In the vertical direction, the distance between the opposing portion 83a and the surface Wa of the wafer W held by the wafer holding portion 53 may be 0.2 mm to 2.0 mm, 0.25 mm to 1.8 mm, or 0.3 mm to 1.5 mm.

[0110] Each of the plurality of ejection ports 121 may be formed so as to eject the inert gas Gn obliquely downward. The ejection passage 122 connecting the buffer space B2 and the ejection ports 121 may be formed so as to extend obliquely downward from the buffer space B1.

[0111] From the viewpoint of configuring the main body 125 to be separated from the surface Wa, the angle (hereinafter referred to as "ejection angle θg") of the ejection direction of the inert gas Gn from the ejection port 121 relative to the surface Wa of the wafer W held by the wafer holding portion 53 may be 5° or more, 5.5° or more, 6° or more, or 6.5° or more. When the ejection angle θg is less than 5°, the main body 125 may contact the surface Wa of the wafer W held by the wafer holding portion 53 due to component tolerance.

[0112] From the viewpoint of making it easy for the inactive gas Gn ejected from the ejection port 121 to flow to a position outside the periphery of the wafer W, the ejection angle θg may be 15° or less, 14.5° or less, 14° or less, or 13.5° or less. When the ejection angle θg is greater than 15°, it may be difficult for the inactive gas Gn ejected from the ejection port 121 to flow to a position outside the periphery of the wafer W. In one example, the ejection angle θg is 5° to 15° or 6.5° to 13.5°.

[0113] When focusing on one of the ejection outlets 121 among at least a portion of the ejection outlets 121, the ejection angle θg may be measured as an angle formed by the imaginary line IL2 and the surface Wa of the wafer W held by the wafer holding portion 53. The imaginary line IL2 is an imaginary line that passes through the center of the ejection outlet 121 and extends in the extension direction of the ejection passage 122 connected to the ejection outlet 121. The imaginary line IL2 may pass through the space between the opposing portion 83a and the surface Wa of the wafer W held by the wafer holding portion 53. Thus, the inactive gas Gn is ejected from the ejection outlet 121 toward the above space.

[0114] return Figure 3The peripheral exposure device 50 includes a control unit 150. The control unit 150 controls various components included in the peripheral exposure device 50. The control unit 150 may be a computer independent of the control device 100 included in the wafer processing system 1.

[0115] The control unit 150 may at least perform the following control: while the peripheral exhaust unit 110 is continuously exhausted, the wafer W is rotated in the rotation direction R1 by the wafer holding unit 53, and the exposure light is irradiated from the exposure unit 70. In addition to performing such control, the control unit 150 may further perform the following control: while the peripheral exhaust unit 110 is continuously exhausted, the wafer holding unit 53 is used to rotate another wafer W in the rotation direction R2, and the exposure light is irradiated from the exposure unit 70.

[0116] like Fig.10 As shown, the control unit 150 has, for example, a circuit 210. The circuit 210 has a processor 211, a memory 212, a storage unit 213, and an input / output port 214. The storage unit 213 is composed of one or more non-volatile storage devices such as a flash memory or a hard disk. The storage unit 213 stores a program that causes the device to perform the following operations: using the wafer holding unit 53 to hold and rotate the wafer W; using the exposure unit 70 to irradiate the peripheral area of ​​the surface Wa of the wafer W held by the wafer holding unit 53 with light for exposure; and using the peripheral exhaust unit 110 to exhaust from the following exhaust range, which is set to include a portion corresponding to the irradiation position IP on the outside of the periphery of the wafer W held by the wafer holding unit 53 and extend along the above-mentioned periphery. The storage unit 213 functions as a program storage unit.

[0117] The memory 212 is composed of one or more volatile storage devices such as a random access memory. The memory 212 temporarily stores the program loaded from the storage unit 213. The processor 211 is composed of one or more computing devices such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). The processor 211 controls various components included in the peripheral exposure device 50 by executing the program loaded in the memory 212. The calculation results of the processor 211 are temporarily stored in the memory 212. The input and output port 214 inputs and outputs information between the wafer holding unit 53, the exposure unit 70, the peripheral exhaust unit 110, the gas ejection unit 120, etc. according to the request from the processor 211.

[0118] The various functions of the control unit 150 may be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit, instead of a program. The control unit 150 may also be constituted by a plurality of computers that are connected in a manner that enables communication with each other. The control unit 150 may also be a part of the control device 100 provided in the wafer processing system 1. The control device 100 may also have a Fig.10 The circuit 210 is the same circuit as shown.

[0119] [Peripheral exposure method]

[0120] Next, a peripheral exposure method performed using the peripheral exposure device 50 is described. The peripheral exposure method may also include: holding and rotating the wafer W using the wafer holding portion 53; irradiating the peripheral region of the surface Wa of the wafer W held by the wafer holding portion 53 with exposure light; and exhausting from an exhaust range that is set to include a portion corresponding to the irradiation position (irradiation position IP) of the exposure light outside the peripheral edge of the wafer W held by the wafer holding portion 53 and extending along the peripheral edge.

[0121] The above-mentioned peripheral exposure method may also include: holding the wafer W by the wafer holding part 53 and rotating it in the rotation direction R1; irradiating the peripheral area of ​​the surface Wa of the wafer W held by the wafer holding part 53 with exposure light; and exhausting at least a portion corresponding to the irradiation position (irradiation position IP) of the exposure light and a region downstream of the portion in the outer side of the periphery of the wafer W held by the wafer holding part 53 with reference to the rotation direction R1 by the peripheral exhaust part 110. In addition, the above-mentioned peripheral exposure method may also rotate the wafer W in the rotation direction R1 by the wafer holding part 53 while emitting exposure light toward the above-mentioned peripheral area while continuing to exhaust the peripheral exhaust part 110.

[0122] exist Fig.11 1 shows a series of processes performed by the control unit 150 when performing peripheral exposure processing and inspection processing on a wafer W. In this series of processes, the control unit 150 performs step S11 in a state where the wafer holding unit 53 is arranged at the first position P1 and the exhaust of the peripheral exhaust unit 110 and the lower exhaust unit 130 is continuously performed. During the execution of the following series of processes, the exhaust of the peripheral exhaust unit 110 and the lower exhaust unit 130 is continuously performed. In step S11, for example, the control unit 150 starts the ejection of the inert gas Gn from the gas ejection unit 120 and the ejection of the inert gas from the gas ejection unit 85 in the irradiation member 73 of the exposure unit 70.

[0123] Next, the control unit 150 executes steps S12 and S13. In step S12, for example, the control unit 150 controls the wafer conveying device 33 and the wafer holding unit 53 to deliver the wafer W to be processed into the interior of the housing 51. In step S13, for example, the control unit 150 controls the moving drive unit 55 to move the wafer holding unit 53 from the first position P1 to the second position P2. In addition, the control unit 150 uses the sensor unit 61 to detect the identification portion of the wafer W, and uses the wafer holding unit 53 to align the posture of the wafer W so that the identification portion is configured at a predetermined angular position.

[0124] Next, the control unit 150 executes steps S14 and S15. In step S14, for example, the control unit 150 starts the rotation of the wafer W by the wafer holding unit 53 and the irradiation of the exposure light by the exposure unit 70. Thus, the exposure light starts to be irradiated to the peripheral area of ​​the surface Wa of the wafer W. The control unit 150 can also control the rotation drive unit 53b to rotate the wafer W in the rotation direction R1. In step S15, for example, the control unit 150 stands by until the wafer W rotates a predetermined set angle. The set angle can also be set to more than 360° so that the entire area of ​​the peripheral area of ​​the surface Wa of the wafer W is exposed.

[0125] Next, the control unit 150 executes step S16. In step S16, for example, the control unit 150 stops the rotation of the wafer W by the wafer holding unit 53 and the irradiation of the exposure light by the exposure unit 70. Before executing step S16, the peripheral area of ​​the surface Wa of the wafer W is irradiated with the exposure light, and sublimates are generated from the resist film formed on the surface Wa. Since the exhaust of the peripheral exhaust unit 110 is continuously performed, the sublimates generated from the resist film can be recovered by the peripheral exhaust unit 110. In the case where the sublimates flow to the bottom of the wafer W, the sublimates flowing to the bottom can be recovered by the lower exhaust unit 130.

[0126] Next, the control unit 150 executes step S17. In step S17, for example, the control unit 150 controls the moving drive unit 55 to move the wafer holding unit 53 from the second position P2 to the first position P1. The control unit 150 controls the imaging unit 91 of the inspection unit 90 to capture the surface Wa of the wafer W while the wafer holding unit 53 is moving to the first position P1. The control unit 150 may also send the captured data obtained from the imaging unit 91 to the control device 100.

[0127] Next, the control unit 150 executes steps S18 and S19. In step S18, for example, the control unit 150 controls the wafer holding unit 53 and the wafer conveying device 33 to convey the wafer W to the outside of the housing 51. In step S19, for example, the control unit 150 stops the ejection of the inert gas Gn from the gas ejection unit 120 and the ejection of the inert gas from the gas ejection unit 85 in the irradiation member 73 of the exposure unit 70.

[0128] The control unit 150 may repeat the series of processes of steps S11 to S19 for each of the subsequent plurality of wafers W. When executing the series of processes on a part of the subsequent plurality of wafers W, the control unit 150 may rotate the wafer W in the rotation direction R2 using the wafer holding unit 53 in steps S14 to S16.

[0129] [Modifications]

[0130] Fig.11 The series of processes shown is an example and can be changed appropriately. In the above series of processes, the control unit 150 may also execute a step and the next step in parallel, or execute each step in a different order from the above example. The control unit 150 may also omit any step, or execute a process different from the above example in any step.

[0131] like Fig.12 As shown, the peripheral exposure device 50 may also have a peripheral exhaust section 110A instead of the peripheral exhaust section 110. The peripheral exhaust section 110A includes a recovery member 112A, a suction member 118A, and a suction member 118B. The buffer space B1 formed by the recovery member 112A may also be line-symmetrical with respect to the imaginary line IL1 when viewed from above. Fig.12 , the upper portion of the recovery member 112A is omitted.

[0132] The multiple exhaust ports 113 formed in the recovery member 112A may also be linearly symmetrical with respect to the imaginary line IL1 when viewed from above. The total value of the opening areas of one or more exhaust ports 113 in the multiple exhaust ports 113 formed in the recovery member 112A located in a partition upstream of the portion corresponding to the irradiation position IP may also be substantially consistent with the total value of the opening areas of one or more exhaust ports 113 in a partition located downstream.

[0133] The suction port 119 formed in the suction member 118A and opening in the buffer space B1 may also be arranged near the upper end in the buffer space B1 in the Y-axis direction. The suction port 119 formed in the suction member 118B and opening in the buffer space B1 may also be arranged near the lower end in the buffer space B1 in the Y-axis direction.

[0134] The peripheral exposure device 50 includes an opening and closing member 140A and an opening and closing member 140B. The opening and closing member 140A is provided in the flow path connected to the suction member 118A, and is a member capable of switching on and off the suction of the suction member 118A. The opening and closing member 140B is provided in the flow path connected to the suction member 118B, and is a member capable of switching on and off the suction of the suction member 118B. The opening and closing member 140A and the opening and closing member 140B are, for example, dampers or valves.

[0135] The control unit 150 may also control the opening and closing members 140A and the opening and closing members 140B so that when the wafer W is rotated in the rotation direction R1 for peripheral exposure, the suction of the suction member 118A is stopped and the suction of the suction member 118B is started. The control unit 150 may also control the opening and closing members 140A and the opening and closing members 140B so that when the wafer W is rotated in the rotation direction R2 for peripheral exposure, the suction of the suction member 118A is started and the suction of the suction member 118B is stopped.

[0136] The control unit 150 may control the opening and closing members 140A and 140B to turn on both the suction of the suction member 118A and the suction of the suction member 118B when the wafer W is rotated by the wafer holding unit 53 for peripheral exposure regardless of the rotation direction of the wafer W.

[0137] like Fig.13 As shown, in the case where a notch N is formed as a marking portion on the periphery of the wafer W, the control unit 150 may also change the exhaust volume (exhaust volume per unit time) of the peripheral exhaust unit 110 when irradiating the prescribed range including the notch N with exposure light. In this case, the peripheral exhaust unit 110 is configured to be able to adjust the exhaust volume. The control unit 150 may also control the peripheral exhaust unit 110 so that the exhaust volume during the period when the self-exposure unit 70 irradiates the prescribed range PR including the notch N with exposure light is greater than the exhaust volume during the period when the self-exposure unit 70 irradiates the range other than the prescribed range PR with exposure light.

[0138] The above-mentioned predetermined range PR for increasing the exhaust volume is a range of positions (angles) in the circumferential direction around the center CP, and may be an angle range corresponding only to the notch N, or may be a range such as Fig.13The angle range corresponding to the notch portion N and its vicinity is shown. The control unit 150 may also switch the exhaust volume from the peripheral exhaust unit 110 from the first exhaust volume to the second exhaust volume that is larger than the first exhaust volume when one end of the prescribed range PR reaches the irradiation position IP due to the rotation of the wafer W. Alternatively, after switching to the second exhaust volume, the control unit 150 switches the exhaust volume from the peripheral exhaust unit 110 from the second exhaust volume to the first exhaust volume when the other end of the prescribed range PR reaches the irradiation position IP due to the rotation of the wafer W. The control unit 150 may also maintain the exhaust volume from the peripheral exhaust unit 110 at the current volume except for the two locations where the exhaust volume is switched.

[0139] The control unit 150 may change the gas ejection amount (ejection amount per unit time) of the gas exhaust unit 120 instead of changing the exhaust amount from the peripheral exhaust unit 110 when irradiating the prescribed range PR including the notch N with the exposure light, or in addition thereto. In this case, the gas ejection unit 120 (or the gas supply unit 129) is configured to be able to adjust the ejection amount. The control unit 150 may also control the gas ejection unit 120 so that the ejection amount during the period when the self-exposure unit 70 irradiates the prescribed range PR including the notch N with the exposure light is greater than the ejection amount during the period when the self-exposure unit 70 irradiates the exposure light to the range other than the prescribed range PR.

[0140] The control unit 150 may switch the ejection amount from the gas ejection unit 120 from the first ejection amount to the second ejection amount larger than the first ejection amount when one end of the prescribed range PR reaches the irradiation position IP due to the rotation of the wafer W. After switching to the second ejection amount, the control unit 150 may switch the ejection amount from the gas ejection unit 120 from the second ejection amount to the first ejection amount when the other end of the prescribed range PR reaches the irradiation position IP due to the rotation of the wafer W. The control unit 150 may maintain the ejection amount from the gas ejection unit 120 at the current amount except for the two locations where the ejection amount is switched.

[0141] In the case of using the rotation direction R1 as a reference, from the viewpoint of exhausting the area corresponding to the irradiation position IP and the area downstream of the area, the exhaust range of the peripheral exhaust unit of the peripheral exposure device 50 may not be along the periphery of the wafer W. Fig.14 (a) and Fig.14 As shown in (b) of FIG. 5 , the peripheral exposure device 50 may include an outer peripheral exhaust unit 110B instead of the outer peripheral exhaust unit 110. The outer peripheral exhaust unit 110B is a pipe that guides the exhausted gas to the outside of the housing 51.

[0142] At least a portion of the peripheral exhaust portion 110B may be formed to extend in the Y-axis direction, and a plurality of exhaust ports 115 may be formed at the bottom of the portion extending in the Y-axis direction. The plurality of exhaust ports 115 are arranged in the Y-axis direction. At least a portion of the plurality of exhaust ports 115 is disposed at a position downstream of a portion corresponding to the irradiation position IP. The total value of the opening areas of the exhaust ports 115 downstream of the portion corresponding to the irradiation position IP among the plurality of exhaust ports 115 may be greater than the total value of the opening areas of the exhaust ports 115 upstream of the portion corresponding to the irradiation position IP. In the case where the peripheral exhaust portion 110B is provided, the control unit 150 may also execute Fig.11 A series of processing shown.

[0143] like Fig.15 As shown, the peripheral exposure device 50 may also have a peripheral exhaust section 110C instead of the peripheral exhaust section 110. The peripheral exhaust section 110C includes a recovery member 112C and a suction member 180. The buffer space B1 formed by the recovery member 112C extends in the X-axis direction and the Y-axis direction in the same manner as the buffer space B1 formed by the recovery member 112 and the buffer space B1 formed by the recovery member 112A. The buffer space B1 of the recovery member 112C is formed to be line-symmetrical with respect to the imaginary line IL1 when observed from a direction perpendicular to the surface Wa of the wafer W held by the wafer holding portion 53 (vertically above). The size of the buffer space B1 of the recovery member 112C in the up and down directions may also be approximately constant.

[0144] The width of the buffer space B1 of the recovery member 112C in the Y-axis direction is smaller than the width of the wafer W in the Y-axis direction. The width of the buffer space B1 in the Y-axis direction is defined as the distance (shortest distance) in the Y-axis direction between the upper end and the lower end of the buffer space B1. The width of wafer W in the Y-axis direction is, for example, equivalent to the diameter of wafer W. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be less than 4 / 5 of the width of wafer W in the Y-axis direction, or less than 3 / 4, or less than 2 / 3. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be greater than the radius of wafer W, or less than the radius of wafer W. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be more than 1 / 3 of the width of wafer W in the Y-axis direction, or more than 1 / 4, or more than 1 / 5.

[0145] Fig.16 A perspective view of the recovery member 112C is shown. Fig.15 and Fig.16, the upper portion 112c included in the recovery member 112C is omitted. The multiple exhaust ports 113 formed in the recovery member 112C may also be line-symmetrical with respect to the imaginary line IL1 when viewed from above. The total value of the opening areas of one or more exhaust ports 113 in the multiple exhaust ports 113 formed in the recovery member 112C, which are located in a partition upstream of the portion corresponding to the irradiation position IP, may also be substantially consistent with the total value of the opening areas of one or more exhaust ports 113 in the partition located downstream.

[0146] The suction member 180 performs suction on the buffer space B1 via a suction port 189 opened in the buffer space B1. When viewed from a direction perpendicular to the surface Wa of the wafer W held by the wafer holding portion 53 (vertically above), the suction port 189 is arranged on the imaginary line IL1. When viewed from above, the suction port 189 can also be formed to be linearly symmetrical with respect to the imaginary line IL1. In this case, the distance in the Y-axis direction (shortest distance) between the upper end of the buffer space B1 and the suction port 189 is approximately consistent with the distance in the Y-axis direction (shortest distance) between the lower end of the buffer space B1 and the suction port 189.

[0147] The suction member 180 includes an exhaust module 182 and an exhaust pipe 184. The exhaust module 182 is disposed at a position overlapping with the recovery member 112C and has a buffer space for exhaust (hereinafter referred to as "buffer space B11". See also Fig.17 The buffer space B11 is connected to the buffer space B1 via the suction port 189. The exhaust pipe 184 is a pipe having one end connected to the exhaust module 182 to guide the gas in the buffer space B11 to the outside of the housing 51. The exhaust pipe 184 may also be a cylindrical pipe in a bent state.

[0148] like Fig.17 As shown, the peripheral exhaust portion 110C may also have an adjustment member 190. The adjustment member 190 is a member for adjusting the flow rate of the gas flowing from the buffer space B1 to the buffer space B11. The bottom of the exhaust module 182 overlaps with the upper portion 112c of the recovery member 112C via the adjustment member 190. That is, the recovery member 112C, the adjustment member 190 and the exhaust module 182 are arranged in this order from the bottom. An opening 112d is formed in the upper portion 112c of the recovery member 112C, and when viewed from above, the opening edge of the opening 112d may be roughly consistent with the opening edge of the suction port 189.

[0149] The adjustment member 190 is formed in a plate shape, for example. An opening 199 is provided in the thickness direction of the adjustment member 190. The size of the opening 199 is smaller than the size of the suction port 189. The flow rate (exhaust flow rate) of the gas flowing from the buffer space B1 to the buffer space B11 is determined by the size of the opening 199. The adjustment of the flow rate of the gas using the adjustment member 190 means that the flow rate of the gas is changed relative to the flow rate of the gas when the adjustment member 190 is not provided by using the opening 199 which is smaller than the suction port 189 (or the opening 112d). According to the peripheral exposure device 50 provided with the peripheral exhaust part 110C, it is sometimes difficult to change the size of the suction port 189 or the opening 112d. In such a case, the exhaust flow rate can also be adjusted by using the opening 199 of the adjustment member 190.

[0150] The adjustment member 190 may be omitted, and the exhaust module 182 may be overlapped on the recovery member 112C in a manner that the exhaust module 182 contacts the upper portion 112c of the recovery member 112C. In the case where the peripheral exhaust portion 110C is provided, the control unit 150 may also execute Fig.11 A series of processing is shown.

[0151] The peripheral exposure device 50 may include a gas ejection unit 120A instead of the gas ejection unit 120. Fig.18 Schematically showing the gas ejection unit 120A, a plurality of ejection ports included in the gas ejection unit 120A and a plurality of flow paths connected to the plurality of ejection ports. The gas ejection unit 120A, like the gas ejection unit 120, ejects the inactive gas Gn from a position inside the periphery of the wafer W held by the wafer holding unit 53 toward between the surface Wa of the wafer W held by the wafer holding unit 53 and the opposing portion 83a of the exposure unit 70 opposing the surface Wa.

[0152] A pair of nozzles 121 located at both ends of the plurality of nozzles 121 are respectively set as "jet 121a", and the other nozzles 121 are set as "jet 121b". The gas ejection portion 120A is configured so that the ejection flow rate (ejection flow rate per unit time) from each of the pair of nozzles 121a is greater than the ejection flow rate from each nozzle 121b. The flow path 122a respectively connected to the pair of nozzles 121a and the flow path 122b connected to each nozzle 121b can also be connected to different buffer spaces (buffer spaces for ejection). By increasing the ejection flow rate from each of the pair of nozzles 121a, the amount of sublimates scattered to the outer side of the pair of nozzles 121a can be reduced.

[0153] The peripheral exposure device 50 may also have the function of performing peripheral exposure without having the function of performing inspection processing. In the peripheral exhaust parts 110, 110A, and 110C, one or more openings formed in a manner extending along the periphery of the wafer W may be provided instead of the multiple exhaust ports 113 arranged along the periphery of the wafer W. In the peripheral exhaust part 110B, one or more openings formed in a manner extending along the Y-axis direction may be provided instead of the multiple exhaust ports 115 arranged along the Y-axis direction.

[0154] In one of the various examples described above, at least part of the matters described in another example may be combined.

[0155] [Summary of the present disclosure]

[0156] The present disclosure includes the structures or methods of the following [1] to

[16] .

[0157] [1] A peripheral exposure device (50), wherein the peripheral exposure device (50) comprises: a substrate holding portion (53) that holds a substrate (W) and rotates it; an exposure portion (70) that irradiates a peripheral area of ​​the surface of the substrate (W) held by the substrate holding portion (53) with exposure light; and an exhaust portion (110, 110A, 110C) that exhausts air from an exhaust range that is set to include a portion outside the periphery of the substrate (W) held by the substrate holding portion (53) corresponding to the irradiation position (IP) of the exposure portion (70) and extending along the above-mentioned periphery.

[0158] In the peripheral exposure device (50), while the peripheral area of ​​the surface (Wa) of the substrate (W) is exposed while the substrate (W) is rotated, the exhaust unit (110, 110A, 110C) can be used to exhaust from the exhaust range extending along the periphery of the substrate (W). As the substrate (W) rotates, sublimates generated by irradiation with exposure light will also fly along the periphery of the substrate (W). Therefore, in the above-mentioned peripheral exposure device (50), compared with the case of exhausting from a portion of the periphery of the substrate (W), the sublimates can be efficiently recovered. Therefore, it is useful to reduce the possibility of the sublimates adhering to the subsequent substrate (W) as the processing object.

[0159] [2] According to the peripheral exposure device (50) described in [1] above, the exhaust section (110, 110A, 110C) has a plurality of exhaust ports (113) arranged along the above-mentioned periphery and a buffer space (B1) for exhaust connected to the plurality of exhaust ports (113), and the exhaust section (110, 110A, 110C) is exhausted via the plurality of exhaust ports (113) and the buffer space (B1) for exhaust.

[0160] In this case, the exhaust unit (110, 110A, 110C) and the components connected thereto can be simplified compared to the case where a flow path for exhaust is formed for each of the plurality of exhaust ports 113. Therefore, it is useful for achieving both efficient recovery of sublimates and simplification of the device.

[0161] [3] According to the peripheral exposure device (50) described in [2] above, the exhaust section (110, 110A, 110C) also has a suction component (118, 118A, 118B, 180), which sucks the buffer space (B1) for exhaust through a suction port (119, 189) opened in the buffer space (B1) for exhaust.

[0162] In this case, even if a buffer space is provided inside the peripheral exposure device (50), the gas can be discharged to the outside of the peripheral exposure device (50) by using the suction member (118, 118A, 118B, 180).

[0163] [4] A peripheral exposure device (50) according to the above-mentioned [3], wherein the buffer space (B1) for exhaust extends in a first direction and a second direction along the surface (Wa) of the substrate (W) held by the substrate holding portion (53), wherein the first direction is a direction extending from a line (IL1) passing through a center (CP) of the substrate (W) held by the substrate holding portion (53) and an irradiation position (IP) of the exposure portion (70), and the second direction is a direction orthogonal to the first direction, and when observed from a direction perpendicular to the surface of the substrate (W) held by the substrate holding portion (53), at least a portion of the buffer space (B1) for exhaust is formed such that as the distance from the suction port (119) in the second direction increases, the size in the first direction decreases.

[0164] In this case, as described above, the difference in exhaust volume according to the distance from the suction port (119) can be reduced among the plurality of exhaust ports (113).

[0165] [5] According to the peripheral exposure device (50) described in [2] above, the buffer space (B1) for exhaust extends in a first direction and a second direction along the surface (Wa) of the substrate (W) held by the substrate holding portion (53), the first direction being a direction extending from a line (IL1) passing through a center (CP) of the substrate (W) held by the substrate holding portion (53) and an irradiation position (IP) of the exposure portion (70), and the second direction being a direction orthogonal to the first direction, and when viewed from a direction perpendicular to the surface (Wa) of the substrate (W) held by the substrate holding portion (53), the buffer space (B1) for exhaust is formed to be linearly symmetrical with respect to the line (IL1).

[0166] In this case, the amount of sublimates recovered from the recovery member (112C) forming the buffer space (B1) becomes the same between one rotation direction (R1) and another rotation direction (R2) of the substrate (W) rotated by the substrate holding portion (53). Thus, the deviation of the processing during different rotation directions can be reduced.

[0167] [6] According to the peripheral exposure device (50) described in [5] above, the exhaust section (110C) also has a suction component (180), which sucks the buffer space (B1) for exhaust through a suction port (189) opened in the buffer space (B1) for exhaust, and when observed from a direction perpendicular to the surface (Wa) of the substrate (W) held by the substrate holding section (53), the suction port (189) is arranged on the line (IL1).

[0168] According to the definition, the irradiation position (IP) of the exposure unit (70) is located on the line (IL1). It is recognized that the amount of sublimates generated at the irradiation position (IP) tends to be greater than that at other positions. In the above structure, by arranging the suction port (189) on the line (IL1), the exhaust is performed more strongly from the position close to the irradiation position (IP) in the exhaust range. In this way, the sublimates can be efficiently recovered.

[0169] [7] A peripheral exposure device (50) according to [5] or [6] above, wherein the width of the buffer space (B1) for exhaust in the second direction is smaller than the width of the substrate (W) in the second direction.

[0170] Sometimes, various components other than the exhaust section (110C) are arranged inside the peripheral exposure device (50). In the above structure, the exhaust buffer space (B1) is arranged in such a way that the line (IL1) passes through the exhaust buffer space (B1), thereby making it possible to efficiently recover sublimates from the location where sublimates are most likely to be generated, and to avoid interference between the peripheral exhaust section (110C) and other components.

[0171] [8] According to the peripheral exposure device (50) described in [2] above, the exhaust section (110) further includes a suction member (118), which sucks the exhaust buffer space (B1) through a suction port (119) opened in the exhaust buffer space (B1), and the exhaust buffer space (B1) expands in a first direction and a second direction along the surface (Wa) of the substrate (W) held by the substrate holding section (53), and the first direction is a direction passing through the substrate (W) held by the substrate holding section (53). W) and the direction in which a line (IL1) extending from the center (CP) of the exposure section (70) and the irradiation position (IP) of the exposure section (70) extends, the above-mentioned second direction is a direction orthogonal to the above-mentioned first direction, in the above-mentioned second direction, the irradiation position (IP) of the exposure section (70) is set close to the first end (upper end) and the second end (lower end) of the buffer space (B1) for exhaust, and in the above-mentioned second direction, the suction port (119) is located between the first end (upper end) and the second end (lower end) and close to the second end (lower end).

[0172] In this case, it is easy to avoid mutual interference between the suction member (118) provided with the suction port (119) and the exposure section (70) that irradiates the exposure light.

[0173] [9] A peripheral exposure device (50), wherein the peripheral exposure device comprises: a substrate holding portion (53) that holds a substrate (W) and rotates it; an exposure portion (70) that irradiates a peripheral area of ​​a surface (Wa) of the substrate (W) held by the substrate holding portion (53) with exposure light; and an exhaust portion (110, 110A, 110B, 110C) that exhausts light from the substrate (W) held by the substrate holding portion (53) based on one direction (R1) of rotation of the substrate (W) performed by the substrate holding portion (53). Exhaust is performed on at least a portion of the outer side of the periphery of the substrate (W) held by the holding portion (53) corresponding to the irradiation position (IP) of the exposure portion (70) and an area downstream of the portion; and a control portion (150) which performs the following control: while the exhaust of the exhaust portion (110, 110A, 110B, 110C) is continued, the substrate (W) is rotated in the above-mentioned direction (R1) by using the substrate holding portion (53), and the exposure light is emitted from the exposure portion (70).

[0174] In the peripheral exposure device (50), when peripheral exposure is performed while rotating the substrate (W) in one direction (R1), exhaust is performed from a position downstream of a portion corresponding to the irradiation area (IP) by using an exhaust unit (110, 110A, 110B, 110C). As the substrate (W) rotates in the above-mentioned one direction (R1), sublimates generated by irradiation with the exposure light will also further fly downstream in the above-mentioned one direction (R1). Therefore, in the above-mentioned peripheral exposure device (50), sublimates can be efficiently recovered compared to a case where exhaust is not performed from a position downstream of a portion corresponding to the irradiation area (IP). Therefore, it is useful to reduce the possibility of sublimates adhering to a subsequent substrate (W) that is a processing object.

[0175]

[10] A peripheral exposure device (50) according to any one of [1] to [9] above, wherein the peripheral exposure device also includes a gas ejection unit (120, 120A), which ejects an inert gas (Gn) from a position closer to the inside than the periphery of the substrate (W) held by the substrate holding unit (53) toward between the surface (Wa) of the substrate (W) held by the substrate holding unit (53) and a relative portion (83a) of the exposure unit (70) relative to the surface (Wa) of the substrate (W).

[0176] In this case, the inert gas (Gn) can be used to move the sublimates generated by the irradiation of the exposure light from the exposure unit (70) to a position outside the periphery of the wafer W. Since the exhaust unit (110, 110A, 110B, 110C) is provided outside the periphery of the wafer W, the amount of sublimates recovered by the exhaust unit can be increased. Therefore, the sublimates can be recovered more efficiently.

[0177]

[11] A peripheral exposure device (50) according to the above-mentioned

[10] , wherein the gas ejection section (120) has a plurality of ejection ports (121) and a buffer space (B2) for ejection connected to the plurality of ejection ports (121).

[0178] By ejecting the inert gas Gn from a plurality of ejection ports, the gas can be ejected more strongly even with the same ejection amount, so that the sublimates can be moved to a position further outside the periphery of the substrate (W), and the sublimates can be recovered more efficiently.

[0179]

[12] A peripheral exposure device (50) according to

[10] or

[11] above, wherein the angle (θg) of the ejection direction of the inert gas (Gn) from the ejection port (122) of the gas ejection portion (120) relative to the surface (Wa) of the substrate (W) held by the substrate holding portion (53) is 5° to 15°.

[0180] As described above, when the above-mentioned angle (θg) is less than 5°, the main part of the gas ejection part (120) may contact the surface (Wa) of the substrate (W). On the other hand, when the above-mentioned angle (θg) is greater than 15°, it may not be possible to use the inert gas (Gn) to move the above-mentioned sublimation product to a position closer to the outside than the periphery of the substrate (W). These possibilities can be reduced by setting the above-mentioned angle (θg) to 5° to 15°. In addition, when the distance between the relative part (83a) and the surface (Wa) is smaller, it is more beneficial to set the above-mentioned angle θg to 5° to 15°.

[0181]

[13] A peripheral exposure device (50) according to any one of [1] to [8] above, wherein the peripheral exposure device further comprises a control unit (150), a notch portion (N) is formed on the periphery of the substrate (W), and the control unit (150) controls the exhaust unit (110, 110A, 110B, 110C) so that the exhaust volume during the period when the self-exposure unit (70) irradiates the specified range (PR) including the notch portion (N) with exposure light is greater than the exhaust volume during the period when the self-exposure unit (70) irradiates the range outside the specified range (PR) with exposure light.

[0182] In the notch portion (N), there is a case where the amount of resist is larger than that of other parts. In such a case, more sublimates may be generated in the notch portion (N). In the above structure, when the specified range (PR) including the notch portion (N) is exposed, the exhaust volume of the exhaust portion (110, 110A, 110B) increases, so that the increase in the amount of sublimates generated by the notch portion (N) can be suppressed.

[0183]

[14] A peripheral exposure device (50) according to any one of [1] to [8] above, wherein the peripheral exposure device further comprises: a gas ejection unit (120) which ejects an inert gas (Gn) from a position closer to the inner side than the periphery of the substrate (W) held by the substrate holding unit (53) toward between the surface (Wa) of the substrate (W) held by the substrate holding unit (53) and a relative portion (83a) of the exposure unit (70) relative to the surface (Wa) of the substrate (W); and a control unit (150) having a notch (N) formed at the periphery of the substrate (W), the control unit (150) controlling the gas ejection unit (120) so that the ejection amount during the period when the exposure unit (70) irradiates a specified range (PR) including the notch (N) with exposure light is greater than the ejection amount during the period when the exposure unit (70) irradiates a range outside the specified range (PR) with exposure light.

[0184] In the notch portion (N), there is a case where the amount of resist is larger than that of other portions. In such a case, more sublimates may be generated in the notch portion (N). In the above structure, when the specified range (PR) including the notch portion (N) is exposed, the amount of gas ejected from the gas ejection portion (120) increases, thereby suppressing the increase in the amount of sublimates generated by the notch portion (N).

[0185]

[15] A peripheral exposure method, wherein the peripheral exposure method includes: holding a substrate (W) by using a substrate holding portion (53) and rotating it; irradiating a peripheral area of ​​a surface (Wa) of the substrate (W) held by the substrate holding portion (53) with exposure light; and exhausting from an exhaust range such that the exhaust range is set to include a portion outside the periphery of the substrate (W) held by the substrate holding portion (53) corresponding to an irradiation position (IP) of the exposure light and extending along the above-mentioned periphery.

[0186] This edge exposure method, like the edge exposure apparatus (50) described in [1] above, is useful for reducing the possibility of sublimates adhering to a substrate (W) to be processed subsequently.

[0187]

[16] A peripheral exposure method, wherein the peripheral exposure method includes: holding a substrate (W) by using a substrate holding portion (53) and rotating it in one direction (R1); irradiating the peripheral area of ​​the surface of the substrate (W) held by the substrate holding portion (53) with exposure light; and exhausting from at least a portion corresponding to an irradiation position (IP) of the exposure light and an area downstream of the portion on the outer side of the periphery of the substrate (W) held by the substrate holding portion (53) with the above-mentioned one direction (R1) as a reference by using an exhaust portion (110, 110A, 110B, 110C), and emitting exposure light toward the above-mentioned peripheral area while continuing the exhaust by the exhaust portion (110, 110A, 110B, 110C).

[0188] This peripheral exposure method, like the peripheral exposure device (50) described in [9] above, is useful for reducing the possibility of sublimates adhering to a subsequent substrate (W) to be processed.

Claims

1. A peripheral exposure device, wherein: The peripheral exposure device comprises: a substrate holding portion that holds the substrate and rotates it; an exposure unit that irradiates a peripheral region of a surface of the substrate held by the substrate holding unit with light for exposure; and The exhaust section exhausts air from an exhaust range that is set to include a portion corresponding to an irradiation position of the exposure section outside the periphery of the substrate held by the substrate holding section and extends along the periphery.

2. The peripheral exposure device according to claim 1, wherein: The exhaust portion includes a plurality of exhaust ports arranged along the periphery and a buffer space for exhaust connected to the plurality of exhaust ports. The exhaust unit performs exhaust through the plurality of exhaust ports and the buffer space for exhaust.

3. The peripheral exposure device according to claim 2, wherein: The exhaust unit further includes a suction member configured to suck the inside of the exhaust buffer space through a suction port opened in the exhaust buffer space.

4. The peripheral exposure device according to claim 3, wherein: The exhaust buffer space expands in a first direction and a second direction along the surface of the substrate held by the substrate holding portion. The first direction is a direction in which a line passing through the center of the substrate held by the substrate holding portion and the irradiation position of the exposure portion extends. The second direction is a direction orthogonal to the first direction, When viewed from a direction perpendicular to the surface of the substrate held by the substrate holding portion, at least a portion of the exhaust buffer space is formed such that a size in the first direction becomes smaller as a distance from the suction port in the second direction becomes larger.

5. The peripheral exposure device according to claim 2, wherein: The exhaust buffer space expands in a first direction and a second direction along the surface of the substrate held by the substrate holding portion. The first direction is a direction in which a line passing through the center of the substrate held by the substrate holding portion and the irradiation position of the exposure portion extends. The second direction is a direction orthogonal to the first direction, The exhaust buffer space is formed to be line-symmetrical with respect to the line when viewed from a direction perpendicular to the surface of the substrate held by the substrate holding portion.

6. The peripheral exposure device according to claim 5, wherein: The exhaust unit further includes a suction member for sucking the exhaust buffer space through a suction port opened in the exhaust buffer space. The suction port is arranged on the line when viewed from a direction perpendicular to the surface of the substrate held by the substrate holding portion.

7. The peripheral exposure device according to claim 5, wherein: A width of the exhaust buffer space in the second direction is smaller than a width of the substrate in the second direction.

8. The peripheral exposure device according to claim 2, wherein: The exhaust unit further includes a suction member for sucking the exhaust buffer space through a suction port opened in the exhaust buffer space. The exhaust buffer space expands in a first direction and a second direction along the surface of the substrate held by the substrate holding portion. The first direction is a direction in which a line passing through the center of the substrate held by the substrate holding portion and the irradiation position of the exposure portion extends. The second direction is a direction orthogonal to the first direction, In the second direction, the irradiation position of the exposure unit is set between the first end and the second end of the buffer space for exhaust and close to the first end. In the second direction, the suction port is located between the first end and the second end and is close to the second end.

9. A peripheral exposure device, wherein: The peripheral exposure device comprises: a substrate holding portion that holds the substrate and rotates it; an exposure unit that irradiates a peripheral region of a surface of the substrate held by the substrate holding unit with light for exposure; an exhaust section that exhausts air from at least a portion corresponding to an irradiation position of the exposure section and a region downstream of the portion, out of an outer side of a periphery of the substrate held by the substrate holding section, with one direction of rotation of the substrate by the substrate holding section as a reference; and The control section performs control such that the exposure light is emitted from the exposure section while the substrate is rotated in the one direction by the substrate holding section in a state where the exhaust of the exhaust section is continued.

10. The peripheral exposure device according to any one of claims 1 to 9, wherein: The peripheral exposure device also includes a gas ejection portion, which ejects inactive gas from a position closer to the inside than the periphery of the substrate held by the substrate holding portion toward between the surface of the substrate held by the substrate holding portion and a relative portion of the exposure portion relative to the surface of the substrate.

11. The peripheral exposure device according to claim 10, wherein: The gas ejection portion includes a plurality of ejection ports and a ejection buffer space connected to the plurality of ejection ports.

12. The peripheral exposure device according to claim 10, wherein: The angle of the ejection direction of the inert gas from the ejection port of the gas ejection portion with respect to the surface of the substrate held by the substrate holding portion is 5° to 15°.

13. The peripheral exposure device according to any one of claims 1 to 9, wherein: The peripheral exposure device further includes a control unit. A notch is formed on the periphery of the substrate. The control unit controls the exhaust unit so that the exhaust volume during the period when the exposure unit irradiates the exposure light to a predetermined range including the notch is greater than the exhaust volume during the period when the exposure unit irradiates the exposure light to a range other than the predetermined range.

14. The peripheral exposure device according to any one of claims 1 to 9, wherein: The peripheral exposure device also has: a gas ejection portion that ejects an inert gas from a position inside the periphery of the substrate held by the substrate holding portion toward a portion between a surface of the substrate held by the substrate holding portion and a portion of the exposure portion that faces the surface of the substrate; and Control Department, A notch is formed on the periphery of the substrate. The control unit controls the gas ejection unit so that the ejection amount during the period when the exposure unit irradiates the exposure light to a predetermined range including the notch is greater than the ejection amount during the period when the exposure unit irradiates the exposure light to a range other than the predetermined range.

15. A peripheral exposure method, wherein: The peripheral exposure method includes: The substrate is held and rotated by the substrate holding portion; irradiating a peripheral region of a surface of the substrate held by the substrate holding portion with exposure light; and The exhaust is performed from an exhaust range that is set to include a portion outside the periphery of the substrate held by the substrate holding portion that corresponds to an irradiation position of the exposure light and extends along the periphery.

16. A peripheral exposure method, wherein: The peripheral exposure method includes: The substrate is held by the substrate holding portion and rotated in one direction; irradiating a peripheral region of a surface of the substrate held by the substrate holding portion with exposure light; and With the one direction as a reference, exhaust is performed from at least a portion corresponding to the irradiation position of the exposure light and a region downstream of the portion on the outer side of the periphery of the substrate held by the substrate holding portion by the exhaust portion, The exposure light is emitted toward the peripheral region while the substrate is rotated in the one direction by the substrate holding portion while the exhaust of the exhaust portion is continued.

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