Substrate processing system

Abstract

A substrate processing system according to the present invention includes a plasma processing apparatus, a reduced-pressure conveying apparatus connected to the plasma processing apparatus, and a control apparatus. The plasma processing apparatus includes: a processing container configured to be capable of reducing pressure; and a substrate support table which is provided in the processing container and includes a substrate placement surface, a ring placement surface on which an edge ring is placed so as to surround the substrate placement surface, and an electrostatic chuck which electrostatically attracts the edge ring to the ring placement surface. A lifting mechanism for lifting the edge ring with respect to the ring mounting surface; a supply path for supplying gas between the back surface of the edge ring and the ring mounting surface; and a pressure sensor connected to the supply path. The reduced-pressure conveying device has a conveying robot for conveying the edge ring. The control device controls: a step in which the edge ring conveyed into the processing container by the conveying robot and transferred to the lifting mechanism is lowered by the lifting mechanism and placed on the ring placement surface; a step of electrostatically attaching the mounted edge ring to the ring mounting surface; a step in which, after the electrostatic adsorption step, the gas is supplied to the supply path such that the pressure in the supply path is kept higher than the pressure in the processing container; measuring the pressure of the supply path; and a step for determining the placement state of the edge ring on the ring placement surface on the basis of the measured pressure.

Description

Technical Field

[0001] The present invention relates to a substrate processing system. Background Art

[0002] Patent document 1 discloses a focus ring replacement method for a plasma processing device capable of performing plasma processing on a substrate placed on a stage set inside a processing chamber, and for replacing a focus ring placed on a stage in a manner surrounding the substrate. The replacement method includes: a sending out step, in which the focus ring is sent out from the processing chamber by a conveying device for conveying the focus ring without opening the processing chamber to the atmosphere; and a cleaning step, in which, after the sending out step, the surface of the stage on which the focus ring is placed is cleaned. The replacement method also includes a sending in step, in which, after the cleaning step, the focus ring is sent into the processing chamber by a conveying device and placed on the stage without opening the processing chamber to the atmosphere. In addition, Patent document 1 discloses that, in the case where the focus ring is adsorbed on the stage by an electrostatic chuck, a static elimination treatment is performed before the sending out step.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-10992 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The technology according to the present invention places an edge ring on a substrate support table with high accuracy.

[0008] Technical solutions for solving technical problems

[0009] One embodiment of the present invention is a substrate processing system, which includes a plasma processing device, a decompression conveying device connected to the above-mentioned plasma processing device, and a control device, wherein the above-mentioned plasma processing device includes: a processing container configured to be able to reduce pressure; and a substrate support table, which is arranged in the above-mentioned processing container, including a substrate mounting surface, a ring mounting surface for mounting an edge ring in a manner surrounding the above-mentioned substrate mounting surface, and an electrostatic suction cup for electrostatically adsorbing the above-mentioned edge ring on the above-mentioned ring mounting surface; a lifting mechanism for lifting and lowering the above-mentioned edge ring relative to the above-mentioned ring mounting surface; a supply path for supplying gas between the back side of the above-mentioned edge ring and the above-mentioned ring mounting surface; and a pressure sensor connected to the above-mentioned supply path, The above-mentioned pressure reduction conveying device has a conveying robot for conveying the above-mentioned edge ring, and the above-mentioned control device controls: the step of using the above-mentioned lifting mechanism to make the above-mentioned edge ring conveyed by the above-mentioned conveying robot into the above-mentioned processing container and handed over to the above-mentioned lifting mechanism descend and be placed on the above-mentioned ring loading surface; the step of electrostatically adsorbing the carried edge ring on the above-mentioned ring loading surface; after the above-mentioned electrostatic adsorption step, the step of supplying the above-mentioned gas to the above-mentioned supply path so that the pressure of the above-mentioned supply path is maintained higher than the pressure in the above-mentioned processing container; the step of measuring the pressure of the above-mentioned supply path; and the step of judging the loading state of the above-mentioned edge ring on the above-mentioned ring loading surface based on the measured pressure.

[0010] Effects of the Invention

[0011] According to the present invention, the edge ring can be placed on the substrate supporting table with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 FIG. 1 is a plan view schematically showing a configuration of a plasma processing system as a substrate processing system according to the present embodiment.

[0013] Figure 2 This is a diagram showing a schematic structure of a transport robot provided in a transfer module.

[0014] Figure 3 It is a longitudinal sectional view showing a schematic structure of a processing module.

[0015] Figure 4 yes Figure 3 A partial enlarged view of .

[0016] Figure 5 is the circumferential direction of the wafer support table and Figure 4 Magnified cross-sectional views of different parts.

[0017] Figure 6 This is a flowchart showing Example 1 of the edge ring mounting process.

[0018] Figure 7FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0019] Figure 8 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0020] Fig. 9 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0021] Fig.10 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0022] Fig.11 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0023] Fig.12 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0024] Fig.13 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0025] Fig.14 FIG. 1 is a diagram schematically showing the state of the processing module when the edge ring installation process is executed.

[0026] Fig.15 This is a flowchart showing Example 3 of the edge ring installation process.

[0027] Fig.16 This is a flowchart showing Example 5 of the edge ring installation process.

[0028] Fig.17 This is a flowchart showing Example 7 of the edge ring installation process.

[0029] Fig.18 This is a flowchart showing Example 8 of the edge ring installation process.

[0030] Fig.19 This is a partially enlarged view for explaining an example of a wafer support table configured to have an edge ring and a cover ring.

[0031] Fig. 20 This is a partially enlarged view for explaining another example of a wafer support table configured to be able to mount a cover ring in addition to an edge ring.

[0032] Fig.21 This is a partially enlarged view for explaining another example of an electrostatic chuck. DETAILED DESCRIPTION

[0033] In the manufacturing process of semiconductor devices, a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") is subjected to substrate processing such as etching using plasma, i.e., plasma processing. The plasma processing is performed with the substrate mounted on a substrate support in a depressurized processing container.

[0034] In addition, in order to obtain good and uniform plasma processing results in the central and peripheral parts of the substrate, a ring-shaped component (hereinafter referred to as "edge ring") called a focusing ring, edge ring, etc., which is viewed in a top view, is sometimes placed on the substrate support table in a manner surrounding the substrate on the substrate support table.

[0035] In addition, since the result of plasma processing depends on the temperature of the substrate, the temperature of the substrate support table is adjusted during the plasma processing, and the temperature of the substrate is adjusted via the substrate support table.

[0036] When the edge ring is used, the temperature of the edge ring affects the plasma processing result of the peripheral portion of the substrate, so it is also important to control the temperature of the edge ring. Therefore, the temperature of the edge ring is also controlled via the substrate support table.

[0037] However, when the substrate and the edge ring are simply placed on the substrate support table, a vacuum insulation layer is formed between the substrate support table and the substrate and the edge ring, and the temperature cannot be properly adjusted via the substrate support table. In order to improve this, an electrostatic chuck is provided on the substrate support table, and the substrate and the edge ring are electrostatically attached to the electrostatic chuck.

[0038] In addition, the edge ring is consumed by etching due to exposure to plasma, and therefore needs to be replaced. When the edge ring is consumed, it is generally replaced by an operator by opening the processing container to the atmosphere, but it is also conceivable to use a conveying device for conveying the edge ring and replace it without opening the processing container to the atmosphere (see Patent Document 1).

[0039] However, when using an edge ring, the edge ring needs to be properly positioned relative to the substrate support table to obtain uniform processing results around the periphery of the substrate. Specifically, for example, the center of the electrostatic chuck needs to be roughly aligned with the center of the edge ring.

[0040] However, when the edge ring is placed on the electrostatic chuck of the substrate support table using a conveying device for conveying the edge ring, the position of the edge ring relative to the substrate support table may become inappropriate. In addition, even if the placement timing is appropriate, the position of the edge ring relative to the substrate support table may shift and become inappropriate during electrostatic adsorption.

[0041] Therefore, the technology according to the present invention places the edge ring on the substrate support table with high accuracy.

[0042] Hereinafter, the substrate processing system of the present embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, elements having substantially the same functional configuration are denoted by the same reference numerals to omit repeated description.

[0043] <Plasma processing system>

[0044] Figure 1 FIG. 1 is a plan view schematically showing the structure of a plasma processing system as a substrate processing system according to the present embodiment. Figure 2 This is a diagram showing a schematic configuration of a transport robot provided in a transfer module described later.

[0045] exist Figure 1 In the plasma processing system 1, a wafer W as a substrate is processed. Specifically, the wafer W is subjected to substrate processing such as etching processing using plasma, that is, plasma processing.

[0046] The plasma processing system 1 includes an atmospheric section 10 and a decompression section 11, which are connected to each other via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module for performing a desired process on a wafer W under an atmospheric pressure atmosphere. The decompression section 11 includes a decompression module for performing a desired process on a wafer W under a reduced pressure atmosphere (vacuum atmosphere).

[0047] The load lock modules 20 and 21 are provided to connect the loading module 30 included in the atmospheric section 10 and the transfer module 50 included in the decompression section 11 via a gate (not shown). The load lock modules 20 and 21 are configured to temporarily hold the wafer W. In addition, the load lock modules 20 and 21 are configured to switch the inside to an atmospheric pressure atmosphere and a decompression atmosphere.

[0048] The atmosphere section 10 includes a loading module 30 including a conveying mechanism 40 described later, and a loading port 32 on which a front-opening wafer pod (FOUP) 31 is placed. The front-opening wafer pod 31 can store a plurality of wafers W. In addition, the loading module 30 may be connected to an orientation module (not shown) for adjusting the horizontal orientation of the wafers W, a buffer module (not shown) for temporarily storing a plurality of wafers W, and the like.

[0049] The loading module 30 has a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five, loading ports 32 are arranged side by side on one side of the long side of the housing constituting the loading module 30. Load lock modules 20 and 21 are arranged side by side on the other side of the long side of the housing constituting the loading module 30.

[0050] A conveying mechanism 40 configured to hold and convey the wafer W is provided inside the housing of the loading module 30. The conveying mechanism 40 includes a conveying arm 41 that supports the wafer W during conveyance, a rotating table 42 that supports the conveying arm 41 so that the conveying arm 41 can rotate, and a base 43 on which the rotating table 42 is mounted. In addition, a guide rail 44 extending along the longitudinal direction of the loading module 30 is provided inside the loading module 30. The base 43 is provided on the guide rail 44, and the conveying mechanism 40 is configured to be movable along the guide rail 44.

[0051] The decompression section 11 includes a conveying module 50 as a decompression conveying device, a processing module 60 as a plasma processing device, and a storage module 61 as a storage section. The interiors of the conveying module 50 and the processing module 60 (specifically, the interiors of the decompression conveying chamber 51 and the chamber 100 described later) are respectively maintained as a decompression atmosphere, and the interior of the storage module 61 is also maintained as a decompression atmosphere. For one conveying module 50, a plurality of, for example, six processing modules 60 are provided, and a plurality of, for example, two storage modules 61 are also provided. In addition, the number and configuration of the processing modules 60 are not limited to the present embodiment, and can be set arbitrarily, and at least one processing module including the wafer support table described later can be provided. In addition, the number and configuration of the storage module 61 are not limited to the present embodiment, and can be set arbitrarily, for example, at least one is provided.

[0052] The transfer module 50 is configured to be able to transport the wafer W therein. In addition, the transfer module 50 is configured to be able to transport an edge ring E described later therein.

[0053] The transfer module 50 includes a reduced pressure transfer chamber 51 having a housing having a polygonal shape in plan view (a quadrilateral shape in plan view in the example shown in the figure), and the reduced pressure transfer chamber 51 is connected to the load lock modules 20 and 21 .

[0054] The transfer module 50 transports the wafer W introduced into the load lock module 20 to one of the process modules 60 , and sends the wafer W, which has been subjected to a desired plasma process in the process module 60 , out to the load lock module 21 .

[0055] In addition, the transport module 50 sometimes transports the edge ring E in the storage module 61 to one of the processing modules 60 , and sometimes sends the edge ring E in the processing module 60 to the storage module 61 .

[0056] The processing module 60 performs a desired plasma process such as an etching process on the wafer W conveyed from the conveying module 50. The processing module 60 is connected to the conveying module 50 via a gate 62. The specific structure of the processing module 60 will be described later.

[0057] The storage module 61 stores the edge ring E. In addition, the storage module 61 is connected to the conveying module 50 via a gate 63 .

[0058] A transfer robot 70 is provided inside the decompression transfer chamber 51 of the transfer module 50. The transfer robot 70 is configured to hold and transfer the wafer W. In addition, the transfer robot 70 is configured to hold and transfer the edge ring E.

[0059] The conveying robot 70 has a conveying arm 71, and the conveying arm 71 is configured to be rotatable, retractable, and elevating while holding the wafer W. The front end of the conveying arm 71 is branched into two fork-shaped members 72, 72 as holding portions. The fork-shaped members 72, 72 are each configured to hold the conveyed wafer W and the edge ring E. Figure 2 As shown, a measuring unit 73 may be provided on at least one of the forks 72 and 72. The measuring unit 73 measures information on the positional displacement of the edge ring E relative to an electrostatic chuck to be described later provided in the process module 60. The measuring unit 73 includes, for example, a distance sensor (not shown).

[0060] In the transfer module 50, the transfer arm 71 receives the wafer W held in the load lock module 20 and transfers it to the process module 60. In addition, the transfer arm 71 receives the wafer W subjected to a desired process in the process module 60 and transfers it to the load lock module 21.

[0061] In the transport module 50 , the transport arm 71 sometimes receives the edge ring E in the storage module 61 and delivers it to the processing module 60 . In the transport module 50 , the transport arm 71 sometimes receives the edge ring E in the processing module 60 and delivers it to the storage module 61 .

[0062] In addition, the plasma processing system 1 has a control device 80. In one embodiment, the control device 80 processes computer-executable instructions that cause the plasma processing system 1 to perform various steps described in the present invention. The control device 80 can be configured to control other elements of the plasma processing system 1 respectively so that the plasma processing system 1 performs various steps described herein. In one embodiment, a part or all of the control device 80 can also be included in other elements of the plasma processing system 1. The control device 80 can also include a computer 90, for example. The computer 90 can also include a processing unit (CPU: Central Processing Unit) 91, a storage unit 92, and a communication interface 93. The processing unit 91 can be configured to perform various control operations and calculations based on a program stored in the storage unit 92. The storage unit 92 can also include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0063] <Wafer Processing by Plasma Processing System 1>

[0064] Next, an example of wafer processing using the plasma processing system 1 configured as described above will be described.

[0065] First, the wafer W is taken out from the desired front-opening wafer pod 31 by the conveying mechanism 40 and conveyed into the load lock module 20. Next, the inside of the load lock module 20 is sealed and depressurized. Thereafter, the inside of the load lock module 20 is communicated with the inside of the conveying module 50.

[0066] Next, the wafer W is held by the transfer robot 70 and transferred from the load lock module 20 to the transport module 50 .

[0067] Next, the gate 62 corresponding to the desired processing module 60 is opened, and the wafer W is transported into the desired processing module 60 by the transport robot 70. Thereafter, the gate 62 is closed, and the wafer W is subjected to a desired process in the processing module 60. The process of the wafer W in the processing module 60 will be described later.

[0068] Next, the gate 62 is opened, and the wafer W is carried out from the processing module 60 by the transfer robot 70. Thereafter, the gate 62 is closed.

[0069] Next, the wafer W is transported into the load lock module 21 by the transport robot 70. When the wafer W is transported into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. Thereafter, the inside of the load lock module 21 is connected to the inside of the loader module 30.

[0070] Next, the wafer W is held by the transfer mechanism 40 and is returned from the load lock module 21 through the loader module 30 and stored in a desired front opening pod 31. Thus, the wafer processing using the plasma processing system 1 is completed.

[0071] <Processing module 60>

[0072] Next, use Figure 3 to Figure 5 , the processing module 60 is described. Figure 3 It is a longitudinal sectional view showing a schematic structure of the process module 60 . Figure 4 yes Figure 3 A partial enlarged view of . Figure 5 The wafer support 101 described later is parallel to the circumference of the wafer support 101. Figure 4 Enlarged cross-sectional views of different parts.

[0073] like Figure 3 As shown, the processing module 60 includes a chamber 100 as a processing container, a gas supply unit 140, an RF (Radio Frequency) power supply unit 150, and an exhaust system 160. In addition, the processing module 60 also includes a voltage application unit 120 (see Figure 4 ) and the gas supply unit 130 (refer to Figure 5 ). The processing module 60 further includes a wafer support table 101 as a substrate support table and an upper electrode 102.

[0074] The chamber 100 is configured to be decompressed inside and to define a processing space 100s for generating plasma. The chamber 100 is provided with a wafer support table 101 and the like inside. Aluminum can be used as a material of the chamber 100, for example. The chamber 100 is connected to a ground potential.

[0075] The wafer support table 101 is disposed, for example, in a lower region of the chamber 100 . The upper electrode 102 is disposed above the wafer support table 101 and can function as a part of the ceiling of the chamber 100 .

[0076] The wafer support table 101 is configured to support a wafer W. In one embodiment, the wafer support table 101 includes a lower electrode 103, an electrostatic chuck 104, a support body 105, an insulator 106, an elevator 107, and an elevator 108. The wafer support table 101 is configured to support an edge ring E. The wafer support table 101 may or may not include an edge ring E as a component thereof.

[0077] The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, a flow path 109 of a temperature regulating fluid is formed inside the lower electrode 103. The temperature regulating fluid is supplied to the flow path 109 from a cooling unit (not shown) provided outside the chamber 100. The temperature regulating fluid supplied to the flow path 109 returns to the cooling unit. By circulating, for example, low-temperature saline as a temperature regulating fluid in the flow path 109, for example, the wafer support table 101 (specifically, the electrostatic chuck 104), the wafer W, or the edge ring E can be cooled to a predetermined temperature. By circulating, for example, a high-temperature refrigerant as a temperature regulating fluid in the flow path 109, for example, the wafer support table 101 (specifically, the electrostatic chuck 104), the wafer W, or the edge ring E can be heated to a predetermined temperature.

[0078] In addition, when the wafer support table 101 is provided with a temperature control mechanism, the form of the temperature control mechanism is not limited to the above-mentioned flow path 109, and may be other forms such as a resistance heating heater. In addition, the component provided with the temperature control mechanism in the wafer support table 101 is not limited to the lower electrode 103, and may be other components.

[0079] The electrostatic chuck 104 is a component configured to be able to electrostatically adsorb at least the edge ring E, and is provided on the lower electrode 103. In addition, the electrostatic chuck 104 may also be configured to be able to electrostatically adsorb the wafer W. In one embodiment, the central portion of the electrostatic chuck 104 constitutes a substrate mounting portion. In addition, in one embodiment, the upper surface of the central portion of the electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. In one embodiment, the wafer W is mounted on the upper surface 104a of the central portion of the electrostatic chuck 104, and the edge ring E is mounted on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. That is, in one embodiment, the upper surface 104a of the central portion of the electrostatic chuck 104 becomes a wafer mounting surface as a substrate mounting surface for mounting the wafer W, and the upper surface 104b of the peripheral portion of the electrostatic chuck 104 becomes a ring mounting surface for mounting the edge ring E in a manner surrounding the substrate mounting surface.

[0080] The edge ring E is a component configured to surround the wafer W, specifically, a component configured to surround the wafer W placed on the electrostatic chuck 104. In one embodiment, the edge ring E is configured to surround the central portion of the electrostatic chuck 104, the upper surface of which is higher than the peripheral portion. The edge ring E is formed in a circular ring shape when viewed from above. The material of the edge ring E uses Si, SiO2, etc.

[0081] An electrode 110 for electrostatically adsorbing the wafer W to the upper surface 104a of the central portion may be provided at the central portion of the electrostatic chuck 104. In addition, an electrode 111 for electrostatically adsorbing the edge ring E is provided at the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The electrode 111 is, for example, a bipolar type including a pair of electrodes 111a and 111b formed at different positions from each other.

[0082] The electrostatic chuck 104 has a structure in which electrodes 110 and 111 are sandwiched between insulating materials, for example, made of an insulating material.

[0083] like Figure 4 As shown, the electrode 111 is connected to the voltage applying unit 120 so as to generate a force of electrical properties (specifically, for example, Coulomb force) for electrostatically adsorbing the edge ring E. When the electrode 111 is a bipolar type, it is configured so that either a voltage of different polarities or a voltage of the same polarity can be selectively applied from the voltage applying unit 120 to the pair of electrodes 111a and 111b.

[0084] The voltage applying unit 120 includes, for example, two DC power supplies 121 a and 121 b and two switches 122 a and 122 b .

[0085] The DC power source 121 a is connected to the electrode 111 a via the switch 122 a , and selectively applies a positive voltage or a negative voltage for electrostatically adsorbing the edge ring E to the electrode 111 a .

[0086] The DC power source 121 b is connected to the electrode 111 b via the switch 122 b , and selectively applies a positive voltage or a negative voltage for electrostatically adsorbing the edge ring E to the electrode 111 b .

[0087] The voltage applying unit 120 may include a DC power supply 121c and a switch 122c.

[0088] The DC power source 121 c is connected to the electrode 110 via the switch 122 c , and applies a voltage for electrostatically adsorbing the wafer W to the electrode 110 .

[0089] Furthermore, in the present embodiment, the central portion of the electrostatic chuck 104 provided with the electrode 110 and the peripheral portion provided with the electrode 111 are integrated, but the central portion and the peripheral portion may be separate bodies.

[0090] In addition, in the present embodiment, the electrode 111 for attracting and holding the edge ring E is of a bipolar type, but may be of a monopolar type.

[0091] In addition, the central portion of the electrostatic chuck 104 is formed to have a diameter smaller than the diameter of the chip W, for example. When the chip W is placed on the upper surface 104a of the central portion of the electrostatic chuck 104, the peripheral portion of the chip W extends from the central portion of the electrostatic chuck 104.

[0092] In addition, the edge ring E has a step formed in its upper portion, and the upper surface of the outer peripheral portion is formed to be higher than the upper surface of the inner peripheral portion. The inner peripheral portion of the edge ring E is formed in such a manner as to penetrate the lower side of the peripheral portion of the wafer W extending from the central portion of the electrostatic chuck 104. That is, the inner diameter of the edge ring E is formed to be smaller than the outer diameter of the wafer W.

[0093] The support body 105 is a member formed of an insulating material such as quartz in a ring shape in a plan view, and is formed so as to surround the lower electrode 103 and the electrostatic chuck 104 .

[0094] In order to discharge heat transfer gas to the gap between the back side of the mounted wafer W and the wafer W, a gas discharge hole (not shown) may be formed on the upper surface 104a of the central portion of the electrostatic chuck 104. Heat transfer gas from a gas supply unit (not shown) is supplied from the gas discharge hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured to supply heat transfer gas from a gas source to the gas supply hole via a pressure controller, for example.

[0095] And, if Figure 5As shown, a gas discharge hole 104c is formed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Specifically, one end of the gas discharge hole 104c opens on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. For example, a plurality of gas discharge holes 104c are provided along the circumference of the electrostatic chuck 104. The gas discharge hole 104c supplies a heat transfer gas such as helium to the gap between the back side of the edge ring E placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 104b. In addition, the end of the gas discharge hole 104c on the opposite side to the upper surface 104b of the peripheral portion is connected to the gas supply unit 130 via a pipe 133. The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to be able to supply a heat transfer gas from the gas source 131 via the flow controller 132 to the gas discharge hole 104c. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. The gas discharge hole 104c and the pipe 1333 may function as at least a portion of a supply path for supplying gas between the upper surface 104b of the peripheral portion of the electrostatic chuck 104 as the ring mounting surface and the back surface of the edge ring E.

[0096] In addition, the end of the gas discharge hole 104c on the side opposite to the upper surface 104b of the peripheral portion is connected to the exhaust system 160 via the piping 161. As a result, the surroundings of the upper surface 104b of the peripheral portion of the electrostatic chuck 104 can be exhausted via the gas discharge hole 104c. That is, the gas discharge hole 104c can function as an exhaust hole for exhausting the surroundings of the ring mounting surface including the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Therefore, in one embodiment, the gas discharge hole 104c and the piping 161 can function as at least a part of the exhaust path for exhausting the space between the upper surface 104b of the peripheral portion of the electrostatic chuck 104 as the ring mounting surface and the back surface of the edge ring E.

[0097] Furthermore, the electrostatic chuck 104 is provided with a pressure sensor 134 for measuring the pressure of the supply path in order to measure the pressure of the gap between the edge ring E electrostatically attracted to the upper surface 104b of the peripheral portion and the upper surface 104b. The pressure sensor 134 is provided in the pipe 133, for example.

[0098] In addition, a switching valve 135 for switching the start / stop of the supply of the heat transfer gas by the gas supply unit 130 may be provided in the pipe 133. Similarly, a switching valve 162 for switching the start / stop of the exhaust around the upper surface 104b of the peripheral portion by the exhaust system 160 may be provided in the pipe 161.

[0099] Figure 3 The insulator 106 is a cylindrical member formed of ceramic or the like, and supports the support body 105. The insulator 106 is formed to have an outer diameter equal to that of the support body 105, and supports the peripheral edge of the support body 105, for example.

[0100] The lifter 107 is a component that is lifted and lowered relative to the upper surface 104a of the central portion of the electrostatic chuck 104, and is formed in a columnar shape using, for example, ceramics. When the lifter 107 is lifted, its upper end extends from the upper surface 104a, and can support the wafer W. The lifter 107 can transfer the wafer W between the wafer support table 101 and the transfer arm 71 of the transfer robot 70.

[0101] Furthermore, three or more lifters 107 are provided at intervals from each other and are provided so as to extend in the up-down direction.

[0102] The lifters 107 are lifted and lowered by the actuator 112. The actuator 112 includes, for example, a support member 113 that supports the plurality of lifters 107 and a drive unit 114 that generates a driving force to lift the support member 113 and thereby lift the plurality of lifters 107. The drive unit 114 includes, for example, a motor (not shown) as a driving source that generates the driving force.

[0103] Lifter 107 is inserted into insertion hole 115 whose upper end opens at upper surface 104a in the center of electrostatic chuck 104. Insertion hole 115 is formed to extend downward from upper surface 104a in the center of electrostatic chuck 104 to reach the bottom surface of lower electrode 103, for example.

[0104] The lifter 108 is a lifting member that is lifted and lowered relative to the upper surface 104b of the peripheral portion of the electrostatic chuck 104, and is formed of, for example, ceramic. The lifter 108 is, for example, formed in a columnar shape except for the upper end portion (i.e., the front end portion), and the upper end portion is formed in a hemispherical shape. In one embodiment, the lifter 108 is configured so that its upper end can extend from the upper surface 105a of the support body 105 when it rises.

[0105] Furthermore, three or more lifters 108 are provided at intervals along the circumferential direction of the electrostatic chuck 104 , and extend in the up-down direction.

[0106] The lifter 108 is raised and lowered by the actuator 116. The actuator 116 is provided, for example, for each lifter 108, and includes a support member 117 that supports the lifter 108 so that the lifter 108 can move in the horizontal direction. In order to support the lifter 108 so that the lifter 108 can move in the horizontal direction, the support member 117 includes, for example, a thrust bearing. In addition, the actuator 116 includes a driving unit 118 that generates a driving force to raise and lower the support member 117 and thereby raise and lower the lifter 108. The driving unit 118 includes, for example, a motor (not shown) as a driving source that generates the driving force.

[0107] In one embodiment, the lifter 108 is inserted into an insertion hole 119 whose upper end is opened in the upper surface 105a of the support body 105. The insertion hole 119 is formed so as to penetrate the support body 105 in the up-down direction, for example.

[0108] By using the lifter 108 as described above, the edge ring E can be delivered between the wafer support table 101 and the transfer arm 71 of the transfer robot 70 .

[0109] The lifter 108 and the actuator 116 constitute a lift mechanism for lifting and lowering the edge ring E relative to the ring mounting surface.

[0110] The upper electrode 102 also functions as a gas supply unit, i.e., a showerhead, which discharges one or more gases from the gas supply unit 140 into the chamber 100. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a is, for example, fluidically connected to the gas supply unit 140 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are fluidically connected to the gas diffusion chamber 102b and the interior of the chamber 100. In one embodiment, the upper electrode 102 is configured to be able to supply one or more gases, such as processing gases, from the gas inlet 102a via the gas diffusion chamber 102b and the plurality of gas outlets 102c into the chamber 100.

[0111] The gas supply unit 140 may include one or more gas sources 141 and one or more flow controllers 142. In one embodiment, the gas supply unit 140 is configured to supply one or more gases from the gas sources 141 respectively corresponding thereto via the flow controllers 142 respectively corresponding thereto to the gas inlet 102a. Each flow controller 142 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 140 may also include one or more flow modulation devices for modulating or pulsing the flow of one or more gases.

[0112] The RF power supply unit 150 is configured to supply RF power, for example, one or more RF signals to one or more electrodes such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. Thus, plasma is generated from one or more processing gases supplied to the chamber 100, that is, the processing space 100s. Therefore, the RF power supply unit 150 can function as at least a part of a plasma generation unit that generates plasma in the chamber 100. Specifically, the plasma generation unit is configured to generate plasma from one or more gases in the chamber 100. The RF power supply unit 150 includes, for example, two RF generation units 151a, 151b and two matching circuits 152a, 152b. In one embodiment, the RF power supply unit 150 is configured to supply a first RF signal from the first RF generation unit 151a to the lower electrode 103 via the first matching circuit 152a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0113] In one embodiment, the RF power supply unit 150 is configured to supply the second RF signal from the second RF generator 151b to the lower electrode 103 via the second matching circuit 152b. For example, the second RF signal may have a frequency in the range of 400kHz to 13.56MHz. Alternatively, a DC (Direct Current) pulse generator may be used instead of the second RF generator 151b.

[0114] Furthermore, although not shown in the figure, other embodiments can be considered in the present invention. For example, in an alternative embodiment, the RF power supply unit 150 can also be configured to supply a first RF signal from an RF generating unit to the lower electrode 103, supply a second RF signal from another RF generating unit to the lower electrode 103, and supply a third RF signal from yet another RF generating unit to the lower electrode 103. In addition, in other alternative embodiments, a DC voltage can also be applied to the upper electrode 102.

[0115] In addition, in various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may also include pulsing the amplitude of the RF signal between an ON state and an OFF state, or between two or more different ON states.

[0116] The exhaust system 160 can be connected to the exhaust port 100e disposed at the bottom of the chamber 100, for example. The exhaust system 160 can include a pressure valve and a vacuum pump. The vacuum pump can include a turbomolecular pump, a roughing pump, or a combination thereof.

[0117] <Wafer Processing in Process Module 60>

[0118] Next, an example of wafer processing performed using the processing module 60 will be described. In the processing module 60, the wafer W is subjected to plasma processing such as etching processing.

[0119] First, the wafer W is transported into the chamber 100 by the transfer robot 70, and the wafer W is placed on the electrostatic chuck 104 by the lifting and lowering of the lifter 107. Then, a DC voltage is applied to the electrode 110 of the electrostatic chuck 104 from the DC power supply 121c, whereby the wafer W is electrostatically attracted and held by the electrostatic chuck 104. After the wafer W is transported, the interior of the chamber 100 is depressurized to a predetermined vacuum level by the exhaust system 160.

[0120] Next, the processing gas is supplied from the gas supply unit 140 to the processing space 100s via the upper electrode 102. In addition, the high frequency power HF for plasma generation is supplied from the RF power supply unit 150 to the lower electrode 103, thereby exciting the processing gas to generate plasma. At this time, the high frequency power LF for ion introduction may also be supplied from the RF power supply unit 150. Then, the wafer W is subjected to plasma processing by the action of the generated plasma.

[0121] Furthermore, during plasma processing, a DC voltage is applied from DC power supplies 121a and 121b to electrode 111 of electrostatic chuck 104, whereby edge ring E is electrostatically attracted and held by electrostatic chuck 104. Furthermore, during plasma processing, heat transfer gas is discharged toward wafer W attracted and held by electrostatic chuck 104 and the bottom surface of edge ring E through gas supply unit 130 and the like.

[0122] When the plasma processing is terminated, the function of supplying the high frequency power HF from the RF power supply unit 150 and the function of supplying the processing gas from the gas supply unit 140 are stopped. When the high frequency power LF is supplied during the plasma processing, the supply of the high frequency power LF is also stopped. Next, the electrostatic chuck 104 stops adsorbing and holding the wafer W. In addition, the supply of the heat transfer gas to the bottom surface of the wafer W may also be stopped.

[0123] After that, the wafer W is lifted by the lifter 107 and detached from the electrostatic chuck 104. During the detachment, the wafer W may be subjected to a static elimination process. Then, the wafer W is transported out of the chamber 100 by the transfer robot 70, and a series of wafer processing is completed.

[0124] <Installation flow example 1>

[0125] Next, an example of a process of installing the edge ring E into the processing module 60 executed by the plasma processing system 1 will be described. Figure 6 This is a flowchart showing Example 1 of the process of mounting the edge ring E. Figure 7 to Figure 14 Each of them schematically shows the state of the processing module 60 when the installation process of the edge ring E is executed. Figure 7 to Figure 14 In FIG. 1 , the valve in the open state and the voltage applying unit 120 in the ON state are painted white, the valve in the closed state and the voltage applying unit 120 in the OFF state are painted black, and the piping through which the gas flows is represented by a thick line. Figure 7 to Figure 14 In the figure, the gas ejection hole 104c in the state of exhausting through the gas ejection hole 104c is indicated in black, the gas ejection hole 104c in the state of having heat transfer gas inside is indicated in gray, and the gas ejection hole 104c in other states is indicated in white. In addition, the plasma processing system 1 executes the following steps according to the control and calculation of the control device 80 (specifically, the processing unit 91) based on the program stored in the storage unit 92.

[0126] For example, Figure 6 As shown, first, the edge ring E is transported by the transport robot 70 in the chamber 100 and delivered to the lifting mechanism including the lifter 108, and is lowered by the lifting mechanism and placed on the ring placement surface (step S1). This step S1 is performed in a state where no wafer W exists in the chamber 100.

[0127] Specifically, in step S1 , for example, first, the edge ring E in the storage module 61 is transported into the chamber 100 of the processing module 60 to which the edge ring E is to be mounted by the transport robot 70 .

[0128] More specifically, for example, the edge ring E in the storage module 61 is held by the fork 72 of the transport arm 71 of the transport robot 70. In addition, for the processing module 60 to be installed as described above, the exhaust system 160 is used to exhaust the inside of the chamber 100 without discharging the gas through the upper electrode 102, so that the inside of the chamber 100 is in a high vacuum. Next, the corresponding gate 62 is opened, and the fork 72 holding the edge ring E is inserted into the chamber 100 through the delivery port (not shown). Then, as shown in FIG. Figure 7 As shown, edge ring E is transported by fork 72 to upper surface 104b of the peripheral portion of electrostatic chuck 104 and upper surface 105a of support body 105. At this time, no wafer W is placed on upper surface 104a of the central portion of electrostatic chuck 104.

[0129] Next, the edge ring E is delivered from the transport robot 70 to the lifter 108 .

[0130] Specifically, all the lifters 108 are raised, such as Figure 8As shown, the edge ring E is handed over from the fork 72 to the elevator 108. Thereafter, the fork 72 is withdrawn from the chamber 100, and the gate 62 is closed.

[0131] Next, the edge ring E is lowered by the lifting mechanism including the lifter 108 and is placed on the upper surface 104 b of the peripheral edge portion of the electrostatic chuck 104 as a ring placement surface.

[0132] Specifically, the lifter 108 is lowered until the upper end of the lifter 108 is received in the insertion hole 119. Fig. 9 As shown, the edge ring E is placed on the upper surface 104b of the peripheral edge portion of the electrostatic chuck 104 serving as a ring placement surface.

[0133] After step S1, the edge ring E is vacuum-adsorbed onto the ring mounting surface (step S2). Specifically, in a state where no wafer W exists in the chamber 100, the periphery of the ring mounting surface is exhausted through the gas discharge holes 104c also functioning as exhaust holes.

[0134] More specifically, if Fig.10 As shown, the switching valve 162 is opened, and the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the surrounding of the upper surface 105a of the support body 105 are exhausted through the gas discharge hole 104c by the exhaust system 160. In particular, the vicinity of the upper surface 104b of the peripheral portion of the electrostatic chuck 104 is exhausted through the gas discharge hole 104c. As a result, the edge ring E is vacuum-adsorbed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104, which is the ring mounting surface.

[0135] Next, the edge ring E is electrostatically attached to the ring mounting surface (step S3). Specifically, when there is no wafer W in the chamber 100, a voltage is applied to the electrode 111 of the electrostatic chuck 104 while the edge ring E is mounted on the ring mounting surface and the gas is exhausted through the gas outlet 104c.

[0136] More specifically, if Fig.11 As shown in FIG. 1 , with the edge ring E placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 as the ring placement surface and exhausting through the gas discharge hole 104c, the voltage applying unit 120 is turned on, specifically, the DC power supplies 121a and 121b are turned on. Thus, a DC voltage is applied to the electrode 111 of the electrostatic chuck 104. For example, DC voltages of different polarities are applied to the electrode 111a and the electrode 111b.

[0137] Alternatively, after exhaust through the gas discharge holes 104 c is performed, a voltage may be applied to the electrode 111 of the electrostatic chuck 104 while the exhaust is stopped.

[0138] Next, gas is supplied to the supply path so that the pressure of the supply path including the gas discharge holes 104 c is maintained higher than the pressure in the chamber 100 (step S4 ).

[0139] Specifically, when there is no wafer W in the chamber 100 , exhaust through the gas outlet hole 104 c is stopped, and a specified gas is discharged into the gap between the ring mounting surface and the edge ring E through the gas outlet hole 104 c to make the pressure of the gap higher than the pressure in the chamber 100 .

[0140] When step S4 is finished, the gas supply to the supply path, that is, the discharge of the predetermined gas from the gas discharge hole 104c is stopped.

[0141] In step S4, more specifically, Fig.12 As shown, the switching valve 162 is closed, and the exhaust system 160 stops exhausting through the gas outlet hole 104c. In addition, the switching valve 135 is opened, and the heat transfer gas supplied from the gas supply unit 130 is discharged to the above-mentioned gap through the gas outlet hole 104c. When the pressure of the above-mentioned gap reaches the target pressure (specifically, when the measurement result of the pressure sensor 134 reaches the target pressure), as shown in FIG. Fig.13 As shown, the switching valve 135 is closed to stop the discharge of the heat transfer gas. The target pressure is, for example, the pressure of the gap during plasma processing.

[0142] After the gas supply in step S4, the pressure of the supply path including the gas discharge hole 104c is measured (step S5).

[0143] In step S5, specifically, after a predetermined time has passed since the gas supply was stopped in step S4, the pressure of the pipe 133 (more specifically, the pressure of the pipe 133 on the downstream side of the switching valve 135) is measured by the pressure sensor 134. The predetermined time is, for example, 10 seconds to 100 seconds, and this information is pre-stored in the storage unit 92.

[0144] The pressure on the downstream side of the switching valve 135 of the pipe 133 is substantially equal to the pressure in the gap between the ring mounting surface and the edge ring E. Therefore, step S5 can also be referred to as a step of measuring the pressure in the gap between the ring mounting surface and the edge ring E.

[0145] Then, the control device 80 determines the placement state of the edge ring E on the ring placement surface based on the measurement result in step S5, that is, determines whether the placement state is appropriate (step S6).

[0146] Specifically, the control device 80 determines the leakage of the predetermined gas from the gap based on the measurement result in step S5. More specifically, the control device 80 determines whether the pressure measured in step S5 is less than a threshold value as the determination of the leakage of the predetermined gas from the gap. The threshold value is set to, for example, 90% to 98% of the target pressure, and this information is pre-stored in the storage unit 92.

[0147] In step S6, when it is judged that the loading state of the edge ring E on the ring loading surface is inappropriate, that is, when it is judged that a leakage of the specified gas has occurred from the above-mentioned gap (in the case of "No"), the measuring unit 73 of the conveying robot 70 is used to measure information related to the position offset of the edge ring E relative to the electrostatic suction cup 104.

[0148] Specifically, when it is determined that the leakage of the predetermined gas occurs from the gap, that is, when the pressure measured in step S5 is less than the threshold value, first, the gate 62 is opened, and the fork 72 without holding the wafer W and the edge ring E is inserted into the chamber 100. Then, the distance from the distance sensor to the wafer support table 101 is measured by the distance sensor of the measuring unit 73 at predetermined intervals in the circumferential direction of the electrostatic chuck 104 and at predetermined micro intervals in the radial direction of the electrostatic chuck 104.

[0149] Thereafter, the control device 80 calculates the positional deviation amount of the edge ring E with respect to the electrostatic chuck 104 based on the measurement result of the measuring unit 73 (step S8 ).

[0150] Specifically, the control device 80 determines the circumferential end of the central portion of the electrostatic chuck 104 and the inner circumferential end of the edge ring E at predetermined intervals in the circumferential direction of the electrostatic chuck 104 based on the measurement result in step S7, and calculates the distance from the circumferential end of the central portion of the electrostatic chuck 104 to the inner circumferential end of the edge ring E. Then, the control device 80 calculates the positional offset of the edge ring E relative to the electrostatic chuck 104 (specifically, the distance from the center of the central portion of the electrostatic chuck 104 to the center of the edge ring E) based on the above calculation results at the above predetermined intervals. The positional offset calculated here also includes the direction of the positional offset.

[0151] Next, the control device 80 determines whether the positional deviation amount calculated in step S8 exceeds a threshold value (step S9). The threshold value is, for example, 200 μm, and this information is stored in the storage unit 92 in advance.

[0152] When it is determined in step S9 that the positional deviation amount exceeds the threshold value (in the case of YES), the position of the edge ring E on the ring mounting surface is adjusted (step S10).

[0153] Specifically, the application of voltage to the electrode 111 of the electrostatic chuck 104 is stopped, the edge ring E is lifted by the lifting mechanism including the lifter 108 , and then the edge ring E is delivered to the transfer robot 70 .

[0154] More specifically, the application of the DC voltage from the voltage applying unit 120 to the electrode 111 is stopped, and the fork 72 of the transfer robot 70 is moved away from above the wafer support table 101. Next, the edge ring E is de-electrified, and then all the lifters 108 are raised, and the edge ring E is transferred from the wafer support table 101 to the lifters 108. Next, the fork 72 of the transfer arm 71 is moved between the wafer support table 101 and the edge ring E supported by the lifters 108. Next, all the lifters 108 are lowered, and the edge ring E is transferred from the lifters 108 to the fork 72.

[0155] Thereafter, the edge ring E is moved to a position based on the positional shift amount calculated in step S8.

[0156] Specifically, the fork 72 is moved to a correction position based on the positional deviation amount calculated in step S8. The correction position is pre-calculated by the control device 80 based on the positional deviation amount calculated in step S8 so that the positional deviation amount approaches zero.

[0157] After that, the edge ring E returns to the lifting mechanism including the lifter 108, and the edge ring E is lowered by the lifting mechanism and placed on the ring placement surface again.

[0158] Specifically, all the lifters 108 are raised again, and the edge ring E is delivered from the fork 72 to the lifters 108. Next, the fork 72 is withdrawn from the chamber 100, and the shutter 62 is closed.

[0159] Thereafter, the edge ring E is lowered by the lifting mechanism including the lifter 108 and is placed on the upper surface 104 b of the peripheral edge portion of the electrostatic chuck 104 as a ring placement surface.

[0160] Specifically, the lifter 108 is lowered until the upper end of the lifter 108 is accommodated in the insertion hole 119. Thus, the edge ring E is placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104, which is the ring placement surface.

[0161] After step S10, the process returns to step S2 to perform vacuum adsorption of the edge ring E and the like.

[0162] In addition, in step S6, when it is determined that the placement state of the edge ring E on the ring placement surface is appropriate, that is, when it is determined that the leakage of the predetermined gas from the above-mentioned gap does not occur (specifically, when the pressure of the above-mentioned gap measured in step S5 is greater than the threshold value) (in the case of "Yes"), step S11 similar to step S7 is performed. Thus, information on the positional deviation amount of the edge ring E relative to the electrostatic chuck 104 is measured by the measuring unit 73.

[0163] Thereafter, similarly to step S8 , the control device 80 calculates the positional deviation amount of the edge ring E with respect to the electrostatic chuck 104 based on the measurement result of the measuring unit 73 (step S12 ).

[0164] Next, the control device 80 determines whether the positional deviation amount calculated in step S13 is equal to or less than a threshold value (step S13 ).

[0165] When it is determined in step S13 that the positional deviation amount is equal to or less than the threshold value (in the case of YES), a process of stabilizing the electrostatic attraction of the edge ring E is performed (step S14 ).

[0166] Specifically, for example, plasma of the processing gas is generated in the chamber 100 , and the charging state of the edge ring E is changed by the plasma, thereby increasing the electrostatic adsorption force of the edge ring E.

[0167] At this point, the process is complete.

[0168] On the other hand, when it is determined in step S13 that the positional deviation exceeds the threshold value (in the case of "No"), similarly to step S10, the position of the edge ring E on the ring mounting surface is adjusted without the wafer W existing in the chamber 100 (step S16).

[0169] After step S16, the process returns to step S2 to perform vacuum adsorption of the edge ring E and the like.

[0170] In addition, if it is determined in step S9 that the positional deviation amount does not exceed the threshold value (in the case of "No"), it is expected that at least one of the edge ring E and the electrostatic chuck 104 is damaged, foreign matter is attached to the upper surface 104b of the peripheral portion of the electrostatic chuck 104, etc. Therefore, the operation of the entire plasma processing system 1 or a part thereof (for example, only the corresponding processing module 60) is stopped (step S17). Thereafter, the process ends. At the end, an alarm may be issued or a notification may be given to the operator.

[0171] In addition, in step S9, when it is determined that the positional deviation amount does not exceed the threshold value (in the case of "No"), the edge ring E may be temporarily removed from the wafer support table 101 and then placed on the wafer support table 101 again, and then the steps after step S2 may be repeated. In addition, after the edge ring E is sent out from the chamber 100, the steps after step S1 may be performed on a new edge ring E.

[0172] <Example 2 of installation flow>

[0173] In Example 1 of the installation flow, step S2 is performed after step S1, but step S2 may be performed in parallel with step S1.

[0174] Specifically, after the edge ring E is delivered to the lifter 108 in step S1 , before the edge ring E is lowered and placed on the ring placement surface, the periphery of the ring placement surface may be exhausted through the gas discharge holes 104 c also functioning as exhaust holes in step S2 .

[0175] <Installation flow example 3>

[0176] Fig.15 This is a flowchart showing Example 3 of the process of mounting the edge ring E.

[0177] In Example 1 of the above-mentioned installation process, in step S1, the exhaust system 160 exhausts the interior of the chamber 100 without discharging gas through the upper electrode 102, and the edge ring E is transported into the chamber 100 and placed on the ring mounting surface in a high vacuum state in the chamber 100.

[0178] In contrast, in this case, Fig.15 As shown, the following step S21 is performed instead of step S1. In step S21, gas is discharged into the processing space 100s through the upper electrode 102 and the exhaust system 160 exhausts the chamber 100, and the chamber 100 is made into a quasi-high vacuum state (for example, several hundred mTorr), and the edge ring E is transported into the chamber 100 and placed on the ring placement surface.

[0179] In addition, the gas discharge into the processing space 100s may be performed through the upper electrode 102 as described above, or may be performed from a gas introduction port (not shown) without passing through the upper electrode 102.

[0180] In step S21, specifically, for example, first, for the processing module 60 to which the edge ring E is to be installed, an inert gas such as nitrogen is supplied from the gas supply unit 140 via the upper electrode 102 into the processing space 100s, and the chamber 100 is exhausted by the exhaust system 160. Thus, the pressure in the chamber 100 is adjusted to a quasi-high vacuum having a higher vacuum degree than that in the transfer module 50. Thereafter, the corresponding gate 62 is opened, and the fork 72 holding the edge ring E is inserted into the chamber 100 via the delivery port (not shown). Then, the edge ring E is transported to the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105a of the support body 105 by the fork 72. The subsequent processing in step S21 is the same as that in step S2.

[0181] After step S21 , the pressure in the chamber 100 is adjusted to a quasi-high vacuum state with a higher vacuum degree than that in the transfer module 50 , and the aforementioned steps S2 and S3 are performed.

[0182] In addition, after the above steps S2 and S3, the gas discharge into the processing space 100s via the upper electrode 102 is stopped, and the pressure in the chamber 100 is in a high vacuum state, and the pressure of the supply path including the gas discharge hole 104c is increased in the same manner as step S4 (step S22). In addition, the gas discharge into the above processing space 100s may be continued, and the pressure in the chamber 100 is in a quasi-high vacuum state, and the pressure of the supply path including the gas discharge hole 104c is increased in the same manner as step S4.

[0183] After step S22, the steps after step S5 of example 1 of the installation flow are performed.

[0184] <Installation flow example 4>

[0185] In Example 3 of the installation process, after step S21, step S2 is performed in a quasi-high vacuum state in which the pressure in the chamber 100 is adjusted to a higher vacuum degree than that in the transfer module 50, but step S2 can also be performed in parallel with step S21 as in Example 2 of the installation process.

[0186] <Installation flow example 5>

[0187] Fig.16 This is a flowchart showing Example 5 of the process of mounting the edge ring E.

[0188] In the above-described example 1 of the mounting process, in step S3 , the edge ring E is electrostatically attracted in a state where no plasma is generated in the chamber 100 .

[0189] In contrast, in this case, Fig.16As shown, after the steps S1 and S2 of the example 1 of the aforementioned installation process are sequentially performed, the following step S31 is performed instead of step S3. In step S31, the plasma generating gas is discharged into the processing space 100s through the upper electrode 102, and the exhaust system 160 exhausts the chamber 100, and the high-frequency power HF for plasma generation is supplied from the RF power supply unit 150 to, for example, the lower electrode 103. As a result, the gas in the processing space 100s is excited to generate plasma. In addition, an example in which the high-frequency power HF for plasma generation is supplied to the lower electrode 103 is shown, but it is not limited to this, and it may also be supplied to the upper electrode 102. Thereafter, similarly to step S3, in the state in which there is no wafer W in the chamber 100, the edge ring E is placed on the ring mounting surface, and the exhaust is performed through the gas discharge hole 104c, a voltage is applied to the electrode 111 of the electrostatic chuck 104, and the edge ring E is electrostatically attracted to the ring mounting surface.

[0190] After step S31, the steps after step S4 of example 1 of the installation flow are performed.

[0191] <Installation flow example 6>

[0192] In Example 5 of the installation flow, step S2 is performed after step S1, but step S2 may be performed in parallel with step S1 as in Example 2 of the installation flow.

[0193] <Modification of Example 5 and Example 6 of Installation Process>

[0194] Instead of step S1 of examples 5 and 6 of the installation process, step S21 of example 3 of the installation process may be performed. After step S21, the pressure in the chamber 100 is adjusted to a quasi-high vacuum state having a higher vacuum degree than that in the transfer module 50, and the aforementioned step S2 is performed.

[0195] <Installation flow example 7>

[0196] Fig.17 This is a flowchart showing Example 7 of the edge ring E installation process.

[0197] In Example 1 of the installation process, if it is determined in step S6 that the loading state of the edge ring E is appropriate (if "yes"), step S11 similar to step S7 is performed, and information related to the position offset of the edge ring E relative to the electrostatic suction cup 104 is measured using the measuring unit 73.

[0198] In contrast, in this case, Fig.17 As shown, when it is determined in step S6 that the placement state of the edge ring E is appropriate (in the case of "YES"), step S11 is not performed, and the process of stabilizing the electrostatic adsorption of the edge ring E in step S14 is performed.

[0199] <Main effects of example 1-7 of the installation process>

[0200] In Example 1-7 of the installation process, the steps of: lowering the edge ring E that is transported into the chamber 100 by the transport robot 70 and delivered to the lifting mechanism including the lifter 108 by using the lifting mechanism to place it on the ring placement surface; and electrostatically adsorbing the placed edge ring E on the ring placement surface are performed. In addition, in Example 1-7 of the installation process, after the electrostatic adsorption step, the steps of: supplying gas to the supply path so that the pressure of the supply path including the gas discharge hole 104c is maintained higher than the pressure in the chamber 100; measuring the pressure of the supply path; and judging the placement state of the edge ring E based on the measured pressure are performed. In this embodiment, the placement state of the edge ring E is judged in this way, so that when the placement state of the edge ring E is inappropriate, the edge ring E can be placed on the electrostatic chuck 104 with high accuracy by adjusting the position of the edge ring E on the ring placement surface.

[0201] In addition, in Example 1-7 of the mounting process, before the electrostatic adsorption of the edge ring E placed on the ring mounting surface, a step of vacuum adsorbing the edge ring E to the ring mounting surface is performed. Therefore, when the edge ring E is electrostatically adsorbed to the ring mounting surface, it is possible to reduce the gas existing in the gap between the ring mounting surface and the edge ring E. Therefore, when the edge ring E is electrostatically adsorbed to the ring mounting surface, it is possible to suppress the following situation: the gas existing in the above-mentioned gap becomes an obstacle and the position of the edge ring E relative to the electrostatic chuck 104 is shifted.

[0202] In addition, in Example 1-7 of the installation process, when determining the deviation of the edge ring E, it is possible to confirm before the plasma process whether the heat transfer gas does not leak when the heat transfer gas is supplied to the gap during the plasma process. If the heat transfer gas leaks during the plasma process, it is difficult to properly adjust the temperature of the edge ring E through the electrostatic chuck 104 and the heat transfer gas. In contrast, in Example 1-7 of the installation process, as described above, it is possible to confirm in advance whether the heat transfer gas does not leak during the plasma process, so that the following situation, that is, it is difficult to properly adjust the temperature of the edge ring E, can be suppressed.

[0203] <Installation flow example 8>

[0204] Fig.18 This is a flowchart showing Example 8 of the edge ring E installation process.

[0205] In Example 1 of the mounting process, after the edge ring E is electrostatically attracted to the mounting surface in step S3, in step S4, heat transfer gas is supplied between the ring mounting surface and the edge ring E in the supply path including the gas discharge hole 104c, and then steps S5 and S6 are performed to determine the mounting state of the edge ring E. Then, thereafter, in step S7 or step S11, information on the positional deviation of the edge ring E relative to the electrostatic chuck 104 is measured by the measuring unit 73 of the transfer robot 70.

[0206] In contrast, in this case, Fig.18 As shown, after the edge ring E is electrostatically attracted to the ring mounting surface in step S3 , step S11 is performed to measure information on the positional deviation of the edge ring E relative to the electrostatic chuck 104 by the measuring unit 73 .

[0207] In addition, after step S11, the steps after step S12 of example 1 of the installation flow are performed.

[0208] Specifically, in step S12 , the control device 80 calculates the positional deviation amount of the edge ring E with respect to the electrostatic chuck 104 based on the measurement result of the measuring unit 73 .

[0209] Next, the control device 80 determines whether the positional deviation amount calculated in step S12 is less than a threshold value (step S13). If it is determined in step S13 that the positional deviation amount is less than the threshold value (if "yes"), a process of stabilizing the electrostatic adsorption of the edge ring E is performed (step S14).

[0210] <Installation flow example 9>

[0211] In Example 8 of the installation flow, similarly to Example 1 of the installation flow, step S2 is performed after step S1, but step S2 may be performed in parallel with step S1.

[0212] <Installation flow example 10>

[0213] Step S21 of Example 3 of the installation process may be performed instead of step S1 of Examples 8 and 9 of the installation process. After step S21, the pressure in the chamber 100 is adjusted to a quasi-high vacuum state with a higher vacuum degree than that in the transfer module 50, and the aforementioned steps S2 and S3 are performed.

[0214] <Installation flow example 11>

[0215] After steps S1 and S2 of examples 8 and 9 of the installation process, step S31 of example 5 of the installation process may be performed instead of step S3 to electrostatically adsorb the edge ring E while plasma is generated in the chamber 100 .

[0216] <Example 12 of installation flow>

[0217] Alternatively, before the electrostatic adsorption of the edge ring E in step S3 or step S31 in the example 8-11 of the mounting process, the information on the positional deviation of the edge ring E relative to the electrostatic chuck 104 may be measured by the measuring unit 73, similarly to step S11. Furthermore, thereafter, before the electrostatic adsorption of the edge ring E in step S31, similarly to step S12, the positional deviation of the edge ring E relative to the electrostatic chuck 104 may be calculated by the control device 80 based on the measurement result of the measuring unit 73.

[0218] That is, steps S11 and S12 may be performed before the electrostatic adsorption of the edge ring E in steps S3 and S31 in Example 8-11 of the mounting process.

[0219] <Main effects of Example 8-12 of the installation process>

[0220] In Example 8-12 of the installation process, after the step of electrostatically adsorbing the edge ring E to the ring mounting surface, the information on the positional deviation of the edge ring E relative to the electrostatic chuck 104 is measured by the measuring unit 73 of the fork 72 provided on the conveying robot 70. Therefore, the actual positional deviation of the edge ring E installed in Example 8-12 of the installation process relative to the electrostatic chuck 104 can be calculated, that is, obtained. In the present embodiment, the positional deviation of the edge ring E is obtained in this way, so that when the positional deviation of the edge ring E relative to the electrostatic chuck 104 is large, the edge ring E can be mounted with high precision by adjusting the position of the edge ring E on the ring mounting surface. In addition, it is possible to suppress the plasma processing in the state where the positional deviation is large.

[0221] Furthermore, in Examples 8 to 12 of the mounting process, similarly to Examples 1 to 7 of the mounting process, when the edge ring E is electrostatically adsorbed to the ring mounting surface, it is possible to reduce the gas present in the gap between the ring mounting surface and the edge ring E. Therefore, when the edge ring E is electrostatically adsorbed to the ring mounting surface, it is possible to suppress a situation in which the position of the edge ring E relative to the electrostatic chuck 104 is shifted due to the gas present in the gap becoming an obstacle.

[0222] <Main Effects of Installation Process Examples 5, 6, 11, and 12>

[0223] In Examples 5, 6, 11, and 12 of the mounting process, in step S31, electrostatic attraction of the edge ring E is performed while plasma is generated in the chamber 100. Therefore, electric charges are supplied from the plasma in the chamber 100 to the edge ring E on the ring mounting surface, so that the edge ring E can be electrostatically attracted more firmly.

[0224] <Modification of Example 1-7 of Installation Process>

[0225] In step S4 or step S22, the predetermined gas supplied to the gap between the ring mounting surface and the edge ring E is the heat transfer gas, but other than the heat transfer gas, for example, nitrogen gas may be used.

[0226] In step S6 , if it is determined that the placement state of the edge ring E is inappropriate (“No”), step S17 may be performed instead of step S7 to step S10 to stop the operation of the entire or a part of the plasma processing system 1 .

[0227] <Modification of Example 8-12 of Installation Process>

[0228] In step S13, when it is determined that the positional deviation is less than the threshold value (in the case of "Yes"), steps S4 to S6 of Example 1 of the installation process may be performed before step S14. At this time, in step S6, when it is determined that the placement state of the edge ring E is not appropriate (in the case of "No"), the edge ring E may be temporarily removed from the wafer support table 101 and then placed on the wafer support table 101 again, and then the steps after step S2 may be repeated. In addition, in step S6, when it is determined that the placement state of the edge ring E is not appropriate (in the case of "No"), step S17 may be performed instead to stop the operation of the entire or part of the plasma processing system 1.

[0229] <Modification of Installation Process 12>

[0230] Before the electrostatic adsorption of the edge ring E in step S3, etc., after step S11 and step S12, step S13 may be performed, that is, it may be determined whether the positional deviation amount calculated in step S12 is less than a threshold value. Here, if it is determined that the positional deviation amount is less than the threshold value, the steps after the electrostatic adsorption step of the edge ring E in step S3, etc. are performed. On the other hand, if it is determined that the positional deviation amount exceeds the threshold value, for example, after the position of the edge ring E in step S16 is adjusted, the flow may be returned to step S2.

[0231] <Modification of Examples 3, 4, and 10 of the Installation Process>

[0232] In Examples 3, 4, and 10 of the installation process, an inert gas such as nitrogen is supplied to the processing space 100s, and the chamber 100 is exhausted by the exhaust system 160 to adjust the pressure in the chamber 100 to a semi-high vacuum. Then, after the adjustment, the gate 62 is opened and the edge ring E is introduced into the chamber 100. Alternatively, the pressure in the chamber 100 may be adjusted to a semi-high vacuum after the edge ring E is introduced into the chamber 100 and the gate 62 is closed.

[0233] <Modification of Example 1-12 of Installation Process>

[0234] In the above examples, when leakage occurs from the gap between the ring supporting surface and the edge ring E in step S6, or when the position offset calculated in step S12 exceeds a threshold in step S13 of example 8 of the installation process, the operation of the entire or part of the plasma processing system 1 (for example, only the corresponding processing module 60) can also be stopped.

[0235] In addition, the vacuum adsorption step of the edge ring E in step S2 may be omitted.

[0236] <Modification of Plasma Processing Apparatus>

[0237] Unlike the examples 1 to 7 of the installation flow, the pressure sensor 134 is not used in the examples 8 to 12 of the installation flow. Therefore, when the examples 8 to 12 of the installation flow are adopted, the pressure sensor 134 may be omitted.

[0238] The measuring unit 73 includes a distance sensor, but may include a camera instead of the distance sensor as long as information on the positional deviation amount of the edge ring E with respect to the electrostatic chuck 104 can be measured.

[0239] Furthermore, although exhaust through the gas discharge holes 104 c also serving as exhaust holes and exhaust of the interior of the chamber 100 , namely, the processing space 100 s , are performed by a common exhaust system 160 , they may be performed by different exhaust systems.

[0240] In addition, the exhaust hole and the gas discharge hole 104c may be provided separately. That is, an exhaust path including the exhaust hole for exhausting the air between the back surface of the edge ring E and the ring mounting surface and a supply path including the gas discharge hole 104c may be provided separately.

[0241] In addition to the edge ring E, a cover ring may be placed on a wafer support table used in a plasma processing apparatus so as to cover the outer side surface of the edge ring. The technology of the present invention can also be applied to this case.

[0242] Fig.19 This is a partially enlarged view for explaining an example of a wafer support table configured to be able to place the edge ring EA and the cover ring CA.

[0243] Below, about Fig.19 The wafer support table 101A is Figure 3 The following description will focus on the differences of the wafer support table 101 shown in the figure.

[0244] Fig.19 The wafer support table 101A and Figure 3The wafer support table 101 shown in FIG. 1 also includes a lower electrode 103A, a support body 105A, and a lifter 108A in addition to the electrostatic chuck 104, the insulator 106, and the lifter 107. The wafer support table 101A is configured to be able to mount both the edge ring EA and the cover ring CA.

[0245] The lower outer peripheral portion of the lower electrode 103A and the upper inner peripheral portion of the support body 105A are formed so as to overlap in a plan view. In addition, the lower electrode 103A and the support body 105A are provided with an insertion hole 119A through which the lifter 108A is inserted. The insertion hole 119A is formed so as to extend downward from the upper surface 105Aa of the inner peripheral portion of the support body 105A and reach the bottom surface of the lower outer peripheral portion of the lower electrode 103A.

[0246] The electrostatic chuck 104 is placed on the lower electrode 103A. The edge ring EA is placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104, and the cover ring CA is placed on the upper surface 105Aa of the support body 105A. The height of the upper surface 105Aa of the support body 105A is substantially the same as that of the upper surface of the lower electrode 103A.

[0247] Edge ring EA is formed to have a larger outer diameter than electrostatic chuck 104 . Therefore, when edge ring EA is placed on upper surface 104 b of the peripheral portion of electrostatic chuck 104 , the peripheral portion of edge ring EA protrudes from the peripheral portion of electrostatic chuck 104 .

[0248] The cover ring CA is a member arranged to cover the outer side surface of the edge ring EA. The cover ring CA is also formed in a ring shape in a plan view similarly to the edge ring EA. In one embodiment, the cover ring CA has a convex portion CA1 protruding radially inward at its bottom.

[0249] In addition, the cover ring CA has a through hole CA2 for inserting the lifter 108A at a position corresponding to each lifter 108A. The through hole CA2 penetrates from the bottom surface of the cover ring CA to the edge ring EA. The through hole CA2 is provided at a portion (specifically, for example, the convex portion CA1) that overlaps with the inner peripheral portion of the cover ring CA that overlaps with the peripheral portion of the edge ring EA when viewed from above.

[0250] The lifter 108A is configured to be able to extend from the upper surface 105Aa of the inner peripheral portion of the support body 105A, and to be raised and lowered in a manner that the amount of extension from the upper surface 105Aa can be adjusted. Specifically, the lifter 108A is configured to be able to extend from a position of the upper surface 105Aa of the inner peripheral portion of the support body 105A that overlaps with the edge ring EA and the cover ring CA when viewed from above. The insertion hole 119A through which the lifter 108A is inserted is formed at a position that overlaps with the edge ring EA and the cover ring CA when viewed from above.

[0251] Lifter 108A and Figure 3 Similarly, three or more lifters 108 are provided at intervals along the circumferential direction of the electrostatic chuck 104 .

[0252] In addition, the lifter 108A has a first engaging portion 108Aa and a second engaging portion 108Ab.

[0253] The first engaging portion 108Aa is formed by the upper portion of the lifter 108A. The first engaging portion 108Aa is formed in a columnar shape except for the upper end portion (i.e., the front end portion), and the upper end portion is formed in a hemispherical shape. The first engaging portion 108Aa extends upward from the through hole CA2 of the cover ring CA and engages with the edge ring E. The first engaging portion 108Aa is configured to abut against the bottom surface of the edge ring EA through the through hole CA2 of the cover ring CA when the lifter 108A rises, thereby being able to support the edge ring EA from the bottom surface.

[0254] The second engagement portion 108Ab is located below the first engagement portion 108Aa and engages with the cover ring CA. The second engagement portion 108Ab is configured to abut against the bottom surface of the cover ring CA without passing through the through hole CA2 of the cover ring CA, thereby being able to support the cover ring CA from the bottom surface.

[0255] The second engagement portion 108Ab is connected to the base end of the first engagement portion 108Aa along the axial direction of the lifter 108A. The second engagement portion 108Ab has a protrusion 108Ac protruding outward from the outer periphery of the first engagement portion 108Aa at a position connected to the first engagement portion 108Aa.

[0256] The specific shapes of the first engaging portion 108Aa, the second engaging portion 108Ab, and the protruding portion 108Ac are not particularly limited. For example, the first engaging portion 108Aa, the second engaging portion 108Ab, and the protruding portion 108Ac may each be a cylindrical member and be coaxial with each other.

[0257] The actuator 116 mentioned above raises and lowers the lifter 108A in which the cover ring CA is engaged with the second engagement portion 108b, thereby raising and lowering the cover ring CA.

[0258] In addition, the actuator 116 raises and lowers the lifter 108 in which the edge ring E is engaged with the first engagement portion 108Aa, thereby raising and lowering the edge ring E.

[0259] In the example of the figure, when the lifter 108 is in the lowest position, the second engaging portion 108Ab is not located in the insertion hole 119A, but it may be located in this position. In this case, a sleeve (not shown) may be provided in the hole of the lower electrode 103A constituting the insertion hole 119A. The sleeve is inserted into the lifter 108, and the lifter 108 is positioned relative to the lower electrode 103A by fitting, thereby positioning the lifter 108 relative to the electrostatic chuck 104. By this positioning, the edge ring EA and the cover ring CA supported by the lifter 108 are also positioned.

[0260] When the wafer support table 101A is used, the edge ring EA may be mounted by itself or simultaneously with the cover ring CA.

[0261] When the edge ring EA is mounted alone, the step of placing the edge ring EA on the wafer support table 101 is performed, for example, as follows.

[0262] That is, for example, the edge ring E in the storage module 61 is transported by the transfer robot 70 into the chamber 100 of the processing module 60 to which the edge ring EA is to be mounted.

[0263] Specifically, the edge ring EA in the storage module 61 is held by the fork 72 of the conveying robot 70. Next, the fork 72 holding the edge ring E is inserted into the chamber 100 of the processing module 60 as the installation object through the delivery port (not shown). Then, the edge ring EA is conveyed to the upper surface 104b of the peripheral portion of the electrostatic chuck 104 by the fork 72. At this time, the cover ring CA is placed on the upper surface 105a of the support body 105.

[0264] Next, the edge ring E is placed from the transfer robot 70 onto the electrostatic chuck 104 .

[0265] Specifically, all the lifters 108A are raised, and the edge ring EA is transferred from the fork 72 to the first engaging portion 108Aa of the lifter 108A through the through hole CA2 of the cover ring CA. At this time, the lifter 108A is raised until the top of the first engaging portion 108Aa reaches a predetermined height. The predetermined height here is a height at which the fork 72 does not interfere with the edge ring EA and the cover ring CA when the fork 72 is inserted or withdrawn between the cover ring CA placed on the support body 105A and the edge ring EA supported by the first engaging portion 108Aa.

[0266] Next, fork 72 is pulled out of chamber 100 . In addition, lifter 108A is lowered. Thus, edge ring EA is placed on upper surface 104 b of the peripheral portion of electrostatic chuck 104 .

[0267] On the other hand, when the edge ring EA and the cover ring CA are simultaneously mounted, the step of placing the edge ring EA on the wafer support table 101 is performed, for example, as follows.

[0268] That is, for example, the cover ring CA supporting the edge ring EA in the storage module 61 is transported by the transfer robot 70 into the chamber 100 of the processing module 60 to which the edge ring EA and the cover ring CA are to be installed.

[0269] Specifically, the cover ring CA supporting the edge ring EA in the storage module 61 is held by the fork 72 of the conveying robot 70. Next, the fork 72 holding the cover ring CA is inserted into the chamber 100 of the processing module 60 as the installation object through the delivery port (not shown). Then, the cover ring CA supporting the edge ring EA is conveyed to the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105Aa of the support body 105A by the conveying arm 71.

[0270] Next, the edge ring EA and the cover ring are placed from the transfer robot 70 onto the electrostatic chuck 104 and the support body 105A.

[0271] Specifically, all the lifters 108 are raised, and the edge ring E is transferred from the cover ring CA held by the fork 72 to the first engaging portion 108Aa of the lifter 108A passing through the through hole CA2 of the cover ring CA. After that, all the lifters 108A are further raised, and the cover ring CA is transferred from the fork 72 to the second engaging portion 108Ab of the lifter 108A. At this time, the lifter 108A is raised until the top of the second engaging portion 108Ab reaches a predetermined height. The predetermined height here is a height at which the fork 72 does not interfere with the cover ring CA and the like when the fork 72 is inserted or withdrawn between the upper surface 104a of the central portion of the electrostatic suction cup 104 and the cover ring CA supported by the second engaging portion 108Ab.

[0272] Next, the fork 72 is pulled out of the chamber 100. In addition, the lifter 108 is lowered. As a result, the edge ring EA and the cover ring CA are placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105Aa of the support body 105A. Specifically, first, the cover ring CA is placed on the upper surface 105Aa of the support body 105A, and then the edge ring EA is placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104.

[0273] In addition, the edge ring may be configured as follows: that is, the edge ring may be configured so that, even if the position relative to the lifter is offset, the edge ring may move (specifically, slide on the lifter) due to its own weight and the like and be positioned relative to the lifter.

[0274] Fig. 20 The edge ring EB is provided with a recessed portion EB1 for positioning relative to the lifters 108A as described above at positions corresponding to the lifters 108A on its lower surface. The recessed portion EB1 has a trumpet shape that expands downward. In the case where the position of the edge ring EB relative to the plurality of lifters 108A is shifted immediately after the delivery to the plurality of lifters 108A, the edge ring EB moves relative to the plurality of lifters 108A so that the upper end of each lifter 108A slides relatively along the concave surface forming the recessed portion EB1. Therefore, the edge ring EB can be positioned relative to the plurality of lifters 108A.

[0275] In the case of using edge ring EB, for example, Fig. 20 The technology of the present invention can also be applied to the use of a wafer support table 101B. Fig. 20 The situation of the wafer support table 101B.

[0276] The following, with Fig.19 The wafer support table 101B will be described with a focus on differences from the wafer support table 101A shown.

[0277] The wafer support 101B is similar to the wafer support 101A, and includes a lower electrode 103B, a support body 105B, an insulator 106B, and a low thermal expansion member 170 in addition to the electrostatic chuck 104 , the lifter 107 , and the lifter 108A.

[0278] The low thermal expansion member 170 is a member formed in a plate shape and having a lower thermal expansion coefficient than the lower electrode 103B, and is formed of, for example, ceramics, etc. The lower electrode 103B is placed on the low thermal expansion member 170 .

[0279] In the wafer support table 101A, the lower electrode 103 has a larger diameter than the electrostatic chuck 104 in a plan view.

[0280] In contrast, in the wafer support table 101B, the lower electrode 103B has substantially the same diameter as the electrostatic chuck 104 when viewed from above. In addition, the low thermal expansion member 170 is formed to have a larger diameter than the electrostatic chuck 104 when viewed from above. That is, the low thermal expansion member 170 has an outer peripheral portion 171 that does not overlap with the lower electrode 103B when viewed from above.

[0281] A support body 105B formed in a ring shape in a plan view is placed on the outer peripheral portion 171 of the low-thermal expansion member 170 .

[0282] Furthermore, a through hole 172 through which the lifter 108A is inserted is provided in the outer peripheral portion 171 of the low thermal expansion member 170 .

[0283] Furthermore, a sleeve member 180 is placed on the outer peripheral portion 171 of the low thermal expansion member 170 in correspondence with the through hole 172. The sleeve member 180 also has a lower thermal expansion coefficient than the lower electrode 103B, similarly to the low thermal expansion member 170. The sleeve member 180 includes a fixing portion 181 and a sleeve body 182.

[0284] The fixing portion 181 is fixed to the low thermal expansion member 170. For example, the fixing portion 181 is formed to extend outward from the sleeve body 182 and is fixed to the low thermal expansion member 170 by screws 190. By fixing the fixing portion 181 to the low thermal expansion member 170, the sleeve member 180 is fixed to the low thermal expansion member 170. In addition, the sleeve member 180 is fixed in a manner of being spaced apart from the lower electrode 103B with a gap therebetween to avoid contact with the lower electrode 103b that has undergone thermal expansion.

[0285] The sleeve body 182 has a through hole 182a for inserting the lifter 108A. The through hole 182a communicates with the through hole 172 of the low thermal expansion member 170. The lifter 108A is positioned relative to the low thermal expansion member 170 to which the sleeve member 180 is fixed by fitting the sleeve body 182 with the inserted lifter 108A.

[0286] A recess 105Bb is provided at a position of the support body 105B corresponding to the through hole 172. The sleeve member 180 and the screw 190 are accommodated in the recess 105Bb. The recess 105Bb is provided so that the lifter 108A inserted into the sleeve member 180 in the recess 105Bb can extend above the support body 105B. For example, the recess 105Bb has an opening relative to the space above the support body 105B, and the upper end of the sleeve member 180 is inserted into the opening.

[0287] In the wafer support table 101B, an insertion hole 119B through which the lifter 108A is inserted is formed by the through hole 172 of the low thermal expansion member 170, the through hole 182a of the sleeve member 180, and the recessed portion 105Bb of the support body 105B.

[0288] In the wafer support 101B, the cover ring CA is also placed on the upper surface 105Ba of the support body 105B. The upper surface 105Ba of the support body 105B and the upper surface of the lower electrode 103B are substantially aligned in height.

[0289] The insulator 106B is a cylindrical member made of ceramic or the like, and supports the support body 105B and the like by supporting the low thermal expansion member 170 . The insulator 106B is formed to have the same outer diameter as the low thermal expansion member 170 , and supports the peripheral edge of the low thermal expansion member 170 .

[0290] When the wafer support table 101B is used, the sleeve member 180 is positioned relative to the electrostatic chuck 104 and fixed to the low thermal expansion member 170. In addition, as described above, the thermal expansion coefficients of the low thermal expansion member 170 and the sleeve member 180 are lower than those of the lower electrode 103B, and the sleeve member 180 and the lower electrode 103B are fixed with a gap therebetween as described above. Therefore, even under high temperature conditions, the positional relationship between the lifter 108 positioned on the sleeve member 180 (positioned relative to the sleeve member 180) and the electrostatic chuck 104 is not easily affected by the thermal expansion of the lower electrode 103B, etc. Therefore, even under high temperature conditions, the edge ring EB positioned relative to the lifter 108A can be set at an appropriate position based on the electrostatic chuck 104 with high precision via the lifter 108A.

[0291] In addition, in the wafer support table 101B, the diameter of the lower electrode 103B in a plan view can be reduced within a range larger than the diameter of the wafer W. As a result, the state of the plasma generated when a voltage is applied to the lower electrode 103B can be made more uniform within the surface of the wafer W. Therefore, a uniform plasma processing result can be obtained within the surface of the wafer W.

[0292] In addition, when using Figure 3 In the case of the wafer support table 101 shown in the figure, use Fig.19 In the case of the wafer support table 101A, a recess similar to the recess EB1 of the edge ring EB may be provided on the lower surface of the edge ring.

[0293] In addition, you can also Fig.21 As in the wafer support table 101C of FIG. 1 , a groove 104Cd that is recessed downward is formed in an annular shape in the upper surface 104Cb of the peripheral portion of the electrostatic chuck 104C when viewed from above. Furthermore, a gas ejection hole 104c may be formed in the groove 104Cd. Specifically, one end of the gas ejection hole 104c may also be opened in the groove 104Cd.

[0294] In addition, when using Fig.19 The wafer support table 101A, Fig. 20 In the case of the wafer support table 101B, a groove similar to the groove 104Cd may be provided on the upper surface of the peripheral portion of the electrostatic chuck.

[0295] The embodiments disclosed herein are illustrative and non-restrictive in all aspects. The above embodiments may be omitted, replaced, or changed in various ways without departing from the scope of the invention and its gist. For example, the constituent elements of the above embodiments may be combined arbitrarily. According to the arbitrary combination, the functions and effects of the various constituent elements involved in the combination can be obtained, and other functions and effects that are obvious to those skilled in the art based on the description of this specification can be obtained.

[0296] In addition, the effects described in this specification are merely illustrative or exemplary effects and are not limiting. That is, the technology involved in the present invention can achieve other effects that are obvious to those skilled in the art based on the description of this specification in addition to or instead of the above effects.

[0297] In addition, the following structural examples also belong to the technical scope of the present invention.

[0298] (1) A substrate processing system, wherein:

[0299] The invention comprises a plasma processing device, a decompression conveying device connected to the plasma processing device, and a control device,

[0300] The plasma processing device comprises:

[0301] a processing container configured to be capable of reducing pressure; and

[0302] A substrate support table is disposed in the processing container and includes a substrate mounting surface, a ring mounting surface for mounting an edge ring in a manner of surrounding the substrate mounting surface, and an electrostatic chuck for electrostatically adsorbing the edge ring on the ring mounting surface;

[0303] a lifting mechanism for lifting the edge ring relative to the ring mounting surface;

[0304] a supply path for supplying gas between the back surface of the edge ring and the ring mounting surface; and

[0305] A pressure sensor connected to the supply path,

[0306] The decompression conveying device has a conveying robot for conveying the edge ring.

[0307] The above control device controls:

[0308] The step of using the lifting mechanism to lower the edge ring that is transported into the processing container by the transport robot and delivered to the lifting mechanism and place it on the ring placement surface;

[0309] The step of electrostatically adsorbing the edge ring placed on the ring placing surface;

[0310] After the electrostatic adsorption step, supplying the gas to the supply path so that the pressure of the supply path is maintained higher than the pressure in the processing container; and

[0311] The step of measuring the pressure of the supply path.

[0312] A step of determining a placement state of the edge ring on the ring placement surface based on the measured pressure.

[0313] (2) A substrate processing system according to (1) above, wherein:

[0314] The electrostatic chuck includes a first electrode and a second electrode formed at different positions from each other.

[0315] The first electrode and the second electrode are configured to be capable of receiving voltages of different polarities or voltages of the same polarity.

[0316] (3) A substrate processing system according to (1) or (2) above, wherein:

[0317] The plasma processing apparatus further comprises a gas supply unit for discharging other gases into the processing container.

[0318] In the placing step, the edge ring is placed on the ring placing surface while the other gas is discharged into the processing container.

[0319] (4) A substrate processing system according to any one of (1) to (3) above, wherein:

[0320] The plasma processing apparatus further includes a plasma generating unit for generating plasma in the processing container.

[0321] In the electrostatic adsorption step, the edge ring is electrostatically adsorbed in a state where plasma is generated in the processing container.

[0322] (5) A substrate processing system according to any one of (1) to (4) above, wherein:

[0323] In the step of measuring the pressure, the pressure of the supply path is measured after a predetermined time has passed since the supply of the gas was stopped in the step of supplying the gas.

[0324] In the judging step, the placement state of the edge ring on the ring placement surface is judged based on whether the pressure of the supply path measured in the pressure measuring step is less than a threshold value.

[0325] (6) A substrate processing system according to any one of (1) to (5) above, wherein:

[0326] The above-mentioned conveying robot includes:

[0327] a holding portion configured to hold a substrate to be transported; and

[0328] a measuring unit, which is disposed on the holding unit and measures information related to a positional deviation of the edge ring relative to the electrostatic chuck,

[0329] When it is determined that the placement state of the edge ring on the ring placement surface is inappropriate, the control device further controls:

[0330] a step of performing measurement using the above-mentioned measuring unit; and

[0331] A step of calculating the positional deviation of the edge ring based on the measurement result of the measurement unit.

[0332] (7) A substrate processing system according to (6) above, wherein:

[0333] The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated position deviation exceeds a threshold value.

[0334] (8) A substrate processing system according to (7) above, wherein:

[0335] The above adjustment steps include:

[0336] After releasing the electrostatic adsorption of the edge ring and raising the edge ring by using the lifting mechanism, handing the edge ring to the conveying robot;

[0337] Thereafter, a step of moving the edge ring to a position based on the calculated position offset; and

[0338] Thereafter, after returning the edge ring to the elevating mechanism, the edge ring is lowered by the elevating mechanism to be placed again on the ring placing surface.

[0339] (9) A substrate processing system according to any one of (1) to (8), wherein:

[0340] The above-mentioned conveying robot includes:

[0341] a holding portion configured to hold an edge ring to be transported; and

[0342] a measuring unit, which is disposed on the holding unit and measures information related to a positional deviation of the edge ring relative to the electrostatic chuck,

[0343] When it is determined that the placement state of the edge ring on the ring placement surface is appropriate, the control device further controls:

[0344] a step of performing measurement using the above-mentioned measuring unit; and

[0345] A step of calculating the positional deviation of the edge ring based on the measurement result of the measurement unit.

[0346] (10) A substrate processing system according to (9) above, wherein:

[0347] The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated position deviation exceeds a threshold value.

[0348] (11) A substrate processing system as described in (9) or (10), wherein:

[0349] The control device further controls to: when the calculated positional deviation amount is equal to or smaller than a threshold value, perform a process of stabilizing electrostatic adsorption of the edge ring.

[0350] (12) A substrate processing system as described in any one of (1) to (8), wherein:

[0351] When the control device determines that the placement state of the edge ring on the ring placement surface is appropriate, the control device further controls a step of performing a process for stabilizing electrostatic adsorption of the edge ring.

[0352] (13) A substrate processing system according to any one of (1) to (12) above, wherein the gas is a heat transfer gas.

[0353] (14) A substrate processing system according to any one of (1) to (13) above, wherein:

[0354] The plasma processing apparatus further comprises an exhaust path for exhausting air between the back surface of the edge ring and the ring mounting surface.

[0355] The control device further controls a step of vacuum-adsorbing the edge ring onto the ring mounting surface before electrostatically adsorbing the edge ring mounted on the ring mounting surface onto the ring mounting surface.

[0356] (15) A substrate processing system, wherein:

[0357] The invention comprises a plasma processing device, a decompression conveying device connected to the plasma processing device, and a control device,

[0358] The plasma processing device comprises:

[0359] A processing container configured to be capable of reducing pressure;

[0360] A substrate support table is disposed in the processing container and includes a substrate mounting surface, a ring mounting surface for mounting an edge ring in a manner of surrounding the substrate mounting surface, and an electrostatic chuck for electrostatically adsorbing the edge ring on the ring mounting surface;

[0361] a lifting mechanism for lifting the edge ring relative to the ring mounting surface; and

[0362] a supply path for supplying gas between the back surface of the edge ring and the ring mounting surface,

[0363] The decompression conveying device has a conveying robot for conveying the edge ring.

[0364] The above-mentioned conveying robot includes:

[0365] a holding portion configured to hold the edge ring to be transported; and

[0366] a measuring unit, which is disposed on the holding unit and measures information related to a positional deviation of the edge ring relative to the electrostatic chuck,

[0367] The above control device controls:

[0368] The step of using the lifting mechanism to lower the edge ring that is transported into the processing container by the transport robot and delivered to the lifting mechanism and place it on the ring placement surface;

[0369] The step of electrostatically adsorbing the edge ring placed on the ring placing surface;

[0370] After the electrostatic adsorption step, a step of performing measurement using the measurement unit; and

[0371] A step of calculating the positional deviation of the edge ring based on the measurement result of the measurement unit.

[0372] (16) A substrate processing system according to (15) above, wherein:

[0373] Before the electrostatic adsorption step, the control device further controls:

[0374] a step of performing measurement using the above-mentioned measuring unit; and

[0375] A step of calculating the positional deviation of the edge ring based on the measurement result of the measurement unit.

[0376] (17) A substrate processing system according to (15) or (16), wherein:

[0377] The electrostatic chuck has a first electrode and a second electrode formed at different positions from each other.

[0378] The first electrode and the second electrode are configured to be capable of being supplied with voltages of different polarities and voltages of the same polarity.

[0379] (18) A substrate processing system according to any one of (15) to (17), wherein:

[0380] The plasma processing apparatus further comprises a gas supply unit for discharging other gases into the processing container.

[0381] In the placing step, the edge ring is placed on the ring placing surface while the other gas is discharged into the processing container.

[0382] (19) A substrate processing system as described in any one of (15) to (18) above, wherein:

[0383] The plasma processing apparatus further includes a plasma generating unit for generating plasma in the processing container.

[0384] In the electrostatic adsorption step, the edge ring is electrostatically adsorbed in a state where plasma is generated in the processing container.

[0385] (20) A substrate processing system according to any one of (15) to (19), wherein:

[0386] The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated position deviation exceeds a threshold value.

[0387] (21) A substrate processing system as described in any one of (15) to (20), wherein:

[0388] The control device further controls to: when the calculated positional deviation amount is equal to or smaller than a threshold value, perform a process of stabilizing electrostatic adsorption of the edge ring.

[0389] (22) A substrate processing system according to any one of (15) to (21), wherein:

[0390] The plasma processing apparatus further comprises an exhaust path for exhausting air between the back surface of the edge ring and the ring mounting surface.

[0391] The control device further controls a step of vacuum-adsorbing the edge ring onto the ring mounting surface before electrostatically adsorbing the edge ring mounted on the ring mounting surface onto the ring mounting surface.

[0392] Description of Reference Numerals

[0393] 1 Plasma treatment system

[0394] 50 Transmission Module

[0395] 60 Processing Module

[0396] 70 Conveyor Robot

[0397] 72 Fork

[0398] 73 Measurement Department

[0399] 80 Control device

[0400] 100 Chamber

[0401] 101, 101A, 101B, 101C Wafer support

[0402] 104 Electrostatic chuck

[0403] 104a Upper surface of the central portion

[0404] 104b Upper surface of peripheral portion

[0405] 104c Gas outlet

[0406] 105a Upper surface

[0407] 108, 108A Lifter

[0408] 111 Electrode

[0409] 111a Electrode

[0410] 111b Electrode

[0411] 134 Pressure Sensor

[0412] E, EA, EB edge ring

[0413] W chip.

Claims

1. A substrate processing system, characterized in that: The invention comprises a plasma processing device, a decompression conveying device connected to the plasma processing device, and a control device, The plasma processing device comprises: a processing container configured to be capable of reducing pressure; and a substrate support table disposed in the processing container, comprising a substrate mounting surface, a ring mounting surface for mounting an edge ring in a manner surrounding the substrate mounting surface, and an electrostatic chuck for electrostatically adsorbing the edge ring on the ring mounting surface; a lifting mechanism for lifting and lowering the edge ring relative to the ring mounting surface; a supply path for supplying gas between the back surface of the edge ring and the ring mounting surface; and a pressure sensor connected to the supply path, The decompression conveying device has a conveying robot for conveying the edge ring. The control device controls: The step of using the lifting mechanism to lower the edge ring that is transported into the processing container by the transport robot and handed over to the lifting mechanism and place it on the ring placement surface; The step of electrostatically adsorbing the edge ring placed on the ring placing surface; After the electrostatic adsorption step, supplying the gas to the supply path so that the pressure of the supply path is maintained higher than the pressure in the processing container; and The step of measuring the pressure of the supply path. A step of determining a placement state of the edge ring on the ring placement surface based on the measured pressure.

2. The substrate processing system according to claim 1, characterized in that: The electrostatic chuck includes a first electrode and a second electrode formed at different positions from each other, The first electrode and the second electrode are configured to be capable of receiving voltages of different polarities or voltages of the same polarity from each other.

3. The substrate processing system according to claim 1, characterized in that: The plasma processing apparatus further includes a gas supply unit for supplying other gases into the processing container. In the placing step, the edge ring is placed on the ring placing surface while the other gas is discharged into the processing container.

4. The substrate processing system according to claim 1, characterized in that: The plasma processing apparatus further includes a plasma generating unit for generating plasma in the processing container. In the electrostatic adsorption step, the edge ring is electrostatically adsorbed in a state where plasma is generated in the processing container.

5. The substrate processing system according to claim 1, characterized in that: In the step of measuring the pressure, the pressure of the supply path is measured after a predetermined time has passed since the supply of the gas was stopped in the step of supplying the gas. In the judging step, the placement state of the edge ring on the ring placement surface is judged based on whether the pressure of the supply path measured in the pressure measuring step is less than a threshold value.

6. The substrate processing system according to claim 5, characterized in that: The conveying robot comprises: a holding portion configured to hold a substrate to be transported; and a measuring unit, which is disposed on the holding unit and measures information related to a positional offset of the edge ring relative to the electrostatic chuck, When the control device determines that the placement state of the edge ring on the ring placement surface is inappropriate, the control device further controls: a step of performing measurement using the measuring unit; and The step of calculating the positional deviation of the edge ring based on the measurement result of the measuring unit.

7. The substrate processing system according to claim 6, characterized in that: The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated positional deviation exceeds a threshold value.

8. The substrate processing system according to claim 7, characterized in that: The adjusting steps include: After releasing the electrostatic adsorption of the edge ring and raising the edge ring by using the lifting mechanism, handing over the edge ring to the conveying robot; Thereafter, the step of moving the edge ring to a position based on the calculated position offset; and Thereafter, after returning the edge ring to the elevating mechanism, the edge ring is lowered by the elevating mechanism to be placed again on the ring placing surface.

9. The substrate processing system according to claim 1, characterized in that: The conveying robot comprises: a holding portion configured to hold an edge ring to be transported; and a measuring unit, which is disposed on the holding unit and measures information related to a positional offset of the edge ring relative to the electrostatic chuck, When the control device determines that the placement state of the edge ring on the ring placement surface is appropriate, the control device further controls: a step of performing measurement using the measuring unit; and The step of calculating the positional deviation of the edge ring based on the measurement result of the measuring unit.

10. The substrate processing system according to claim 9, characterized in that: The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated positional deviation exceeds a threshold value.

11. The substrate processing system according to claim 9, characterized in that: The control device further controls a step of performing a process of stabilizing electrostatic adsorption of the edge ring when the calculated positional deviation amount is equal to or smaller than a threshold value.

12. The substrate processing system according to claim 1, characterized in that: The control device further controls the step of performing a process of stabilizing electrostatic adsorption of the edge ring when it is determined that the placement state of the edge ring on the ring placement surface is appropriate.

13. The substrate processing system according to claim 1, wherein: The gas is a heat transfer gas.

14. The substrate processing system according to claim 1, wherein: The plasma processing apparatus further includes an exhaust path for exhausting air between the back surface of the edge ring and the ring mounting surface. The control device further controls the step of vacuum-adsorbing the edge ring placed on the ring placing surface before electrostatically adsorbing the edge ring placed on the ring placing surface to the ring placing surface.

15. A substrate processing system, characterized in that: The invention comprises a plasma processing device, a decompression conveying device connected to the plasma processing device, and a control device, The plasma processing device comprises: A processing container configured to be capable of reducing pressure; a substrate support table disposed in the processing container, comprising a substrate mounting surface, a ring mounting surface for mounting an edge ring in a manner surrounding the substrate mounting surface, and an electrostatic chuck for electrostatically adsorbing the edge ring on the ring mounting surface; a lifting mechanism for lifting and lowering the edge ring relative to the ring mounting surface; and a supply path for supplying gas between the back surface of the edge ring and the ring mounting surface, The decompression conveying device has a conveying robot for conveying the edge ring. The conveying robot comprises: a holding portion configured to hold the edge ring to be transported; and a measuring unit, which is disposed on the holding unit and measures information related to a positional offset of the edge ring relative to the electrostatic chuck, The control device controls: The step of using the lifting mechanism to lower the edge ring that is transported into the processing container by the transport robot and handed over to the lifting mechanism and place it on the ring placement surface; The step of electrostatically adsorbing the edge ring placed on the ring placing surface; After the electrostatic adsorption step, a step of performing measurement using the measurement unit; and The step of calculating the positional deviation of the edge ring based on the measurement result of the measuring unit.

16. The substrate processing system according to claim 15, characterized in that: Before the electrostatic adsorption step, the control device further controls: a step of performing measurement using the measuring unit; and The step of calculating the positional deviation of the edge ring based on the measurement result of the measuring unit.

17. The substrate processing system according to claim 15, characterized in that: The electrostatic chuck has a first electrode and a second electrode formed at positions different from each other, The first electrode and the second electrode are configured to be capable of being supplied with voltages of different polarities and voltages of the same polarity.

18. The substrate processing system according to claim 15, characterized in that: The plasma processing apparatus further includes a gas supply unit for discharging other gases into the processing container. In the placing step, the edge ring is placed on the ring placing surface while the other gas is discharged into the processing container.

19. The substrate processing system according to claim 15, characterized in that: The plasma processing apparatus further includes a plasma generating unit for generating plasma in the processing container. In the electrostatic adsorption step, the edge ring is electrostatically adsorbed in a state where plasma is generated in the processing container.

20. The substrate processing system according to claim 15, characterized in that: The control device further controls a step of adjusting the position of the edge ring on the ring mounting surface when the calculated positional deviation exceeds a threshold value.

21. The substrate processing system according to claim 15, characterized in that: The control device further controls a step of performing a process of stabilizing electrostatic adsorption of the edge ring when the calculated positional deviation amount is equal to or smaller than a threshold value.

22. The substrate processing system according to claim 15, characterized in that: The plasma processing apparatus further includes an exhaust path for exhausting air between the back surface of the edge ring and the ring mounting surface. The control device further controls the step of vacuum-adsorbing the edge ring placed on the ring placing surface before electrostatically adsorbing the edge ring placed on the ring placing surface to the ring placing surface.

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