Diamond micro drill and coating growth method

Abstract

The invention discloses a diamond micro drill and a coating growing method.The diamond micro drill comprises a connecting block and a mounting body, one end of the connecting block is connected with a micro drill bit, the other end of the connecting block is connected with a clamping ring, one end of the mounting body is connected to the interior of the clamping ring, and limiting pieces are arranged on the clamping ring and distributed on the clamping ring in an annular array shape; and the mounting body is in threaded connection with the interior of the clamping ring. According to the diamond micro drill and the coating growth method, the whole device is of a split structure, and when the drill bit part, namely the micro drill bit, is damaged and cannot be normally used or the mounting part, namely the mounting body, is damaged and cannot be normally used for mounting and fixing, a worker can dismount three groups of limiting pieces in different ranges by using an external tool; and then the connecting block and the mounting body on one side of the micro drill bit are reversely rotated, so that one end of the mounting body can be screwed out of the clamping ring, the damaged part can be replaced in a targeted manner, and the maintenance cost is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of diamond micro-drill processing, in particular to a diamond micro-drill and a coating growth method. Background Art

[0002] Drill bits with a diameter less than 3.175 mm are usually called micro drill bits, or micro drills for short. To make the micro drill perform efficiently in use, a series of factors must be considered: such as the various elements of the drill bit itself, processing parameters, hole depth, installation perfection, and the structure of the workpiece. Diamond is the original stone of diamond, which is a natural element mineral composed of carbon. Diamond micro drills belong to a type of micro drill. After searching, it is found that the diamond micro drills in the prior art are typically such as the publication number CN110497001A, a new type of diamond micro drill and manufacturing method, including a drill shank and a drill body, the drill body includes a drill tip and a drill body, and the drill body is connected to the drill shank; the outer surface of the drill body is provided with spiral alternating heat dissipation and chip removal grooves and a drill back; the drill body includes a first connecting end and a second connecting end; one end of the first connecting end is provided with an axial core; one end of the second connecting end is provided with an axial core hole matched with the axial core; the drill tip and the first connecting end are both made of PCD material; the second connecting end and the drill shank are both made of cemented carbide material. The present application is applied to the processing of tiny blind holes in printed circuit boards, etc. Compared with traditional micro drill bits made of cemented carbide, the present application has higher drilling hardness and sharpness, and the drill bits are highly resistant to wear and not prone to chip jamming, with higher processing accuracy, longer service life, and higher drilling quality. The main feature of the present application is that the present application adopts a connection between the drill core and the drill core hole, which avoids the occurrence of disconnection, cracking, etc. of the diamond material during use.

[0003] In summary, most of the existing micro drill bits are of an integrated structure, that is, when the drill head or the mounting portion is damaged, the drill bit needs to be replaced as a whole, which makes the cost high. In view of the above problems, it is necessary to improve the existing equipment. Summary of the invention

[0004] The object of the present invention is to provide a diamond micro-drill and coating growth method to solve the problem that most of the existing micro-drill bits mentioned in the above background technology are of an integrated structure, that is, when the drill head or the mounting part is damaged, the drill head needs to be replaced as a whole, which makes the cost high.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a diamond micro-drill and coating growth method, comprising a connecting block and a mounting body, one end of the connecting block is connected to the micro-drill bit, and the other end of the connecting block is connected to a retaining ring, one end of the mounting body is connected to the inside of the retaining ring, and a limiting member is provided on the retaining ring.

[0006] Preferably, the limiting members are distributed on the clamping ring in an annular array, and the mounting body is threadedly connected to the inside of the clamping ring.

[0007] A method for growing a diamond micro-drill coating is used to prepare the diamond micro-drill, comprising the following steps:

[0008] S1, ultrasonic cleaning stage: use an ultrasonic cleaning machine to clean the semi-finished drill bit to remove oil and waste on its surface;

[0009] S2, vacuum treatment stage: vacuumize the magnetron sputtering chamber in sections until its vacuum degree is less than or equal to 5×10-4Pa;

[0010] S3, Argon ion bombardment stage: The positive and negative electrodes are electrified by the control system, and the voltage is gradually increased. When a certain voltage is reached, a glow discharge phenomenon occurs between the positive and negative electrodes, forming a large number of electrons and Ar ions;

[0011] S4, arc bombardment stage: electrons are accelerated toward the anode under the action of the electric field. At the same time, the magnetic field near the cathode constrains the movement range of electrons, significantly increasing the plasma concentration near the target. Ar ions are accelerated toward the target at the cathode under the action of the electric field, bombarding the target, causing some atoms on the target surface to gain recoil energy and break away from the target surface to become sputtered atoms and eventually deposit on the substrate surface;

[0012] S5, secondary electron generation stage: secondary electrons move in a circle around the target surface under the action of the magnetic field. The movement path of the electrons is very long. During the movement, they constantly collide with argon atoms to ionize a large number of argon ions to bombard the target material. After multiple collisions, the energy of the electrons gradually decreases, and they get rid of the constraints of the magnetic lines of force, move away from the target material, and finally deposit on the micro drill bit;

[0013] S6, coating thickness control stage: During the coating process, the sputtering time needs to be controlled according to actual needs to achieve the required coating thickness;

[0014] S7, cooling treatment stage: after the coating is completed, the micro drill bit needs to be cooled;

[0015] S8, coating analysis stage: Finally, the coating needs to be analyzed to detect whether its thickness, quality, hardness and other parameters meet the requirements.

[0016] Preferably, in the S1 ultrasonic cleaning stage, before cleaning the micro drill bit, basic components need to be prepared first, including the metal or non-metal substrate to be coated and other necessary auxiliary equipment, such as a vacuum chamber and a power supply.

[0017] Preferably, in the S1 ultrasonic cleaning stage, after cleaning the micro drill bit, an evaporation source corresponding to the coating material needs to be prepared, placed in a vacuum chamber, and connected to a power supply and a water cooling system.

[0018] Preferably, the S2 vacuum treatment stage requires pretreatment of the vacuum chamber before coating, reducing the pressure to a high vacuum state below 10^-5Pa and maintaining it for more than 30 minutes.

[0019] Preferably, the S2 vacuum treatment stage requires power debugging, which is specifically manifested as: turning on the power and heating the evaporation source to a certain temperature so that the material begins to evaporate; at the same time, by adjusting the power parameters, the evaporation rate, ion energy and other parameters can be controlled to adapt to different materials and coating requirements.

[0020] Preferably, the S3 argon ion bombardment stage requires magnetron assistance while heating the evaporation source, and the method of discharging the metal target in the S3 argon ion bombardment stage is DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, high-power pulse magnetron sputtering, composite pulse magnetron sputtering or arc ion plating. The process parameters of high-power pulse magnetron sputtering are: voltage of 600-1200V, frequency of 50-400Hz, and pulse width of 50-1000μs.

[0021] Preferably, the S6 film thickness control stage generally uses an optical film thickness meter, a quartz crystal microbalance, etc. to perform real-time monitoring and control.

[0022] Preferably, the S7 cooling treatment stage is usually cooled by water cooling, and the common analysis methods in the S8 coating analysis stage include X-ray diffraction, electron microscopy, etc.

[0023] Compared with the prior art, the invention has the following beneficial effects: the diamond micro-drill and coating growth method,

[0024] The present invention can effectively solve the problem that most of the existing micro drill bits are of an integrated structure, that is, when the drill head or the mounting part is damaged, the drill bit needs to be replaced as a whole, which leads to high costs. The present application has a split structure. When the drill head, i.e., the micro drill bit, is damaged and cannot be used normally, or the mounting part, i.e., the mounting body, is damaged and cannot be used for normal installation and fixation, the staff can use external tools to disassemble three groups of limiting parts of different ranges, and then rotate the connecting block and the mounting body on one side of the micro drill bit in reverse, so that one end of the mounting body can be screwed out of the clamping ring, and then the damaged part can be replaced in a targeted manner, thereby reducing the maintenance cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic diagram of the explosion structure of a diamond micro-drill in a diamond micro-drill and a coating growth method of the present invention;

[0026] Figure 2 A schematic diagram of the overall structure of a diamond micro-drill in a diamond micro-drill and a coating growth method of the present invention;

[0027] Figure 3 The present invention is a flow chart of a diamond micro-drill and coating growth method.

[0028] In the figure: 1. connecting block; 2. micro drill bit; 3. clamping ring; 4. limiting piece; 5. mounting body. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] See also Figure 1-3 The present invention provides a technical solution: a diamond micro-drill and a coating growth method, embodiment 1

[0031] A diamond micro drill comprises a connecting block 1 and a mounting body 5, wherein one end of the connecting block 1 is connected to a micro drill bit 2, and the other end of the connecting block 1 is connected to a clamping ring 3, one end of the mounting body 5 is connected to the inside of the clamping ring 3, and a limiting member 4 is provided on the clamping ring 3.

[0032] In a further embodiment, the limit members 4 are distributed on the retaining ring 3 in an annular array, and the mounting body 5 is threadedly connected to the inside of the retaining ring 3. When the drill head or the mounting part is damaged, the drill bit needs to be replaced as a whole, which causes the problem of high cost. The split structure allows the device to be used when the micro drill bit 2 is damaged and cannot be used normally, or the mounting body 5 used to install the device is damaged and cannot be used for installation and fixation normally. The staff can use external tools to disassemble the three groups of limit members 4 in different ranges, and then hold and reversely rotate the connecting block 1 and the mounting body 5 on one side of the micro drill bit 2, so that one end of the mounting body 5 can be screwed out of the retaining ring 3, and then the damaged part can be replaced in a targeted manner, thereby reducing the maintenance cost.

[0033] Embodiment 2

[0034] This embodiment is a further description of the above embodiment. It should be understood that this embodiment includes all the aforementioned technical features and is further described in detail.

[0035] In a further embodiment, a diamond micro-drill coating growth method is applied to prepare a diamond micro-drill, comprising the following steps:

[0036] S1, ultrasonic cleaning stage: use an ultrasonic cleaning machine to clean the semi-finished drill bit to remove oil and waste on its surface;

[0037] S2, vacuum treatment stage: the magnetron sputtering chamber is evacuated in sections until its vacuum degree is less than or equal to 5×10-4Pa. The specific process is to evacuate the air in the vacuum chamber through a vacuum pump group to achieve the required vacuum degree, and then introduce an appropriate amount of argon as a working gas under vacuum environment, adjust it to an appropriate pressure, and apply specific substances to the material surface to prevent discharge and heat generated by magnetron sputtering;

[0038] S3, argon ion bombardment stage: the positive and negative electrodes are electrified by the control system, and the voltage is gradually increased. After reaching a certain voltage, a glow discharge phenomenon occurs between the positive and negative electrodes, forming a large number of electrons and Ar ions. The source is unbalanced. In the unbalanced magnetron sputtering source, the configuration of the magnet in front of the target is different from that of the balanced type, so that part of the magnetic field line extends from the edge of the target to the substrate direction;

[0039] S4, arc bombardment stage: electrons are accelerated toward the anode under the action of the electric field. At the same time, the magnetic field near the cathode constrains the movement range of electrons, significantly increasing the plasma concentration near the target. Ar ions are accelerated toward the target at the cathode under the action of the electric field, bombarding the target, causing some atoms on the target surface to gain recoil energy and break away from the target surface to become sputtered atoms and eventually deposit on the substrate surface;

[0040] S5, secondary electron generation stage: secondary electrons move in a circle around the target surface under the action of the magnetic field. The movement path of the electrons is very long. During the movement, they constantly collide with argon atoms to ionize a large number of argon ions to bombard the target material. After multiple collisions, the energy of the electrons gradually decreases, and they get rid of the constraints of the magnetic lines of force, move away from the target material, and finally deposit on the micro drill bit 2. Since the energy of the secondary electrons is very low, the energy transferred to the substrate is very small, so the temperature rise of the substrate is low, which makes the magnetron sputtering process have the advantages of low deposition temperature and low substrate temperature rise;

[0041] S6, coating thickness control stage: During the coating process, the sputtering time needs to be controlled according to actual needs to achieve the required coating thickness;

[0042] S7, cooling treatment stage: after the coating is completed, the micro drill bit 2 needs to be cooled;

[0043] S8, coating analysis stage: After magnetron sputtering forming, discharge current processing is carried out to obtain a finer shape, thinner thickness and smaller burrs. Finally, the coating needs to be analyzed to detect whether its thickness, quality, hardness and other parameters meet the requirements.

[0044] In a further embodiment, in the ultrasonic cleaning stage S1, before cleaning the micro drill bit 2, it is necessary to first prepare basic components, including the metal or non-metal substrate to be coated and other necessary auxiliary equipment, such as a vacuum chamber and a power supply.

[0045] In a further embodiment, in the S1 ultrasonic cleaning stage, after cleaning the micro drill bit 2, an evaporation source corresponding to the coating material needs to be prepared, placed in a vacuum chamber, and connected to a power supply and a water cooling system.

[0046] In a further embodiment, the S2 vacuum treatment stage requires pretreatment of the vacuum chamber before coating, reducing the pressure to a high vacuum state below 10^-5Pa and maintaining it for more than 30 minutes.

[0047] In a further embodiment, the S2 vacuum processing stage requires power debugging, which is specifically manifested as: turning on the power and heating the evaporation source to a certain temperature so that the material begins to evaporate; at the same time, by adjusting the power parameters, the evaporation rate, ion energy and other parameters can be controlled to adapt to different materials and coating requirements.

[0048] In a further embodiment, the S3 argon ion bombardment stage requires magnetron assistance while heating the evaporation source, and the method of discharging the metal target in the S3 argon ion bombardment stage is DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, high power pulse magnetron sputtering, composite pulse magnetron sputtering or arc ion plating. The process parameters of high power pulse magnetron sputtering are: voltage 600-1200V, frequency 50-400Hz, pulse width 50-1000μs.

[0049] In a further embodiment, the S6 film thickness control stage generally uses an optical film thickness meter, a quartz crystal microbalance, etc. to perform real-time monitoring and control.

[0050] In a further embodiment, the cooling treatment stage S7 is usually performed by water cooling, and the common analysis methods in the coating analysis stage S8 include X-ray diffraction, electron microscopy, etc.

[0051] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A diamond micro drill, comprising a connecting block (1) and a mounting body (5), characterized in that: One end of the connection block (1) is connected to the micro drill bit (2), and the other end of the connection block (1) is connected to the clamping ring (3), one end of the mounting body (5) is connected to the inside of the clamping ring (3), and a limiting member (4) is provided on the clamping ring (3).

2. A diamond micro-drill according to claim 1, characterized in that: The limiting members (4) are distributed on the clamping ring (3) in an annular array, and the mounting body (5) is threadedly connected to the inside of the clamping ring (3).

3. A method for growing a diamond micro-drill coating, used for preparing a diamond micro-drill according to any one of claims 1 to 2, characterized in that: The following steps are involved: S1, ultrasonic cleaning stage: use an ultrasonic cleaning machine to clean the semi-finished drill bit to remove oil and waste on its surface; S2, vacuum treatment stage: vacuumize the magnetron sputtering chamber in sections until its vacuum degree is less than or equal to 5×10-4Pa; S3, Argon ion bombardment stage: The positive and negative electrodes are electrified by the control system, and the voltage is gradually increased. When a certain voltage is reached, a glow discharge phenomenon occurs between the positive and negative electrodes, forming a large number of electrons and Ar ions; S4, arc bombardment stage: electrons are accelerated toward the anode under the action of the electric field. At the same time, the magnetic field near the cathode constrains the movement range of electrons, significantly increasing the plasma concentration near the target. Ar ions are accelerated toward the target at the cathode under the action of the electric field, bombarding the target, causing some atoms on the target surface to gain recoil energy and break away from the target surface to become sputtered atoms and eventually deposit on the substrate surface; S5, secondary electron generation stage: under the action of the magnetic field, the secondary electrons move in a circular motion around the target surface. The movement path of the electrons is very long. During the movement, they continuously collide with argon atoms to ionize a large number of argon ions to bombard the target material. After multiple collisions, the energy of the electrons gradually decreases, and they break free from the constraints of the magnetic field lines, move away from the target material, and finally deposit on the micro drill bit (2); S6, coating thickness control stage: During the coating process, the sputtering time needs to be controlled according to actual needs to achieve the required coating thickness; S7, cooling treatment stage: after the coating is completed, the micro drill bit (2) needs to be cooled; S8, coating analysis stage: Finally, the coating needs to be analyzed to detect whether its thickness, quality, and hardness parameters meet the requirements.

4. A method for growing a diamond micro-drill coating according to claim 3, characterized in that: In the S1 ultrasonic cleaning stage, before cleaning the micro drill bit (2), it is necessary to first prepare basic components, including the metal or non-metal substrate to be coated and other necessary auxiliary equipment, such as a vacuum chamber and a power supply.

5. The method for growing a diamond micro-drill coating according to claim 3, characterized in that: In the S1 ultrasonic cleaning stage, after cleaning the micro drill bit (2), an evaporation source corresponding to the material to be coated needs to be prepared, placed in a vacuum chamber, and connected to a power supply and a water cooling system.

6. A method for growing a diamond micro-drill coating according to claim 3, characterized in that: The S2 vacuum treatment stage requires pretreatment of the vacuum chamber before coating, reducing the pressure to a high vacuum state below 10^-5Pa and maintaining it for more than 30 minutes.

7. A method for growing a diamond micro-drill coating according to claim 3, characterized in that: The S2 vacuum treatment stage requires power debugging, which is specifically: turning on the power and heating the evaporation source to a certain temperature so that the material begins to evaporate; at the same time, by adjusting the power parameters, the evaporation rate and ion energy parameters can be controlled to adapt to different materials and coating requirements.

8. The method for growing a diamond micro-drill coating according to claim 3, characterized in that: The S3 argon ion bombardment stage requires magnetron assistance while heating the evaporation source, and the discharge method for the metal target in the S3 argon ion bombardment stage is DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, high-power pulse magnetron sputtering, composite pulse magnetron sputtering or arc ion plating. The process parameters of high-power pulse magnetron sputtering are: voltage of 600-1200V, frequency of 50-400Hz, and pulse width of 50-1000μs.

9. A method for growing a diamond micro-drill coating according to claim 3, characterized in that: The S6 film thickness control stage generally uses an optical film thickness meter, a quartz crystal microbalance, and other methods for real-time monitoring and control.

10. The method for growing a diamond micro-drill coating according to claim 3, characterized in that: The S7 cooling treatment stage is usually cooled by water cooling, and the common analysis methods in the S8 coating analysis stage include X-ray diffraction and electron microscopy.

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