Optical detection chip, light-emitting chip and laser radar

Abstract

The embodiment of the invention provides an optical detection chip, a light-emitting chip and a laser radar, the optical detection chip comprises a first end face, a first main body and a first antireflection structure, the first end face is suitable for receiving incident light and comprises a pixel area and a non-pixel area; the first main body comprises a pixel body region, and a light receiving surface of the pixel body region is distributed in a pixel region of the first end surface; the light receiving surface of the non-pixel body region is distributed in the non-pixel region of the first end surface; the first antireflection structure is arranged in the non-pixel area of the first end face, at least partially covers the light receiving face of the non-pixel area and is suitable for reducing the reflectivity of the non-pixel area to incident light. With the adoption of the scheme, the first antireflection structure is used for carrying out antireflection treatment on the light incident to the coverage area of the first antireflection structure, and the reflectivity of the non-pixel body area to the light is reduced, so that the reflectivity of the light detection chip to the incident light can be reduced.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of laser radar technology, and in particular to a light detection chip, a light emitting chip and a laser radar. Background Art

[0002] Light detection chips are used in laser radar systems to receive, detect and analyze signal light. Ideally, light detection chips can completely receive the signal light reflected from obstacles back to the laser radar, and perform subsequent detection and analysis on the received signal light. However, in actual applications, light detection chips have a certain reflectivity for signal light, and some of the signal light reflected from the outside world will be reflected back to the outside world by the light detection chip.

[0003] The signal light reflected by the light detection chip to the outside world will reduce the detection accuracy of the laser radar, which is not conducive to the detection of the laser radar. Therefore, how to provide an improved technical solution to reduce the reflectivity of the light detection chip has become a technical problem that technical personnel in this field urgently need to solve.

[0004] The contents of the background technology section are merely the technologies known to the public and do not necessarily represent the existing technologies in the field. Summary of the invention

[0005] In view of this, an embodiment of the present invention provides a light detection chip, a light emitting chip and a laser radar, which can reduce the reflectivity of incident light and improve detection accuracy.

[0006] First, an embodiment of the present invention provides a light detection chip, including a first end face, a first main body and a first anti-reflection structure, wherein:

[0007] The first end surface is suitable for receiving incident light and includes a pixel area and a non-pixel area;

[0008] The first subject comprises:

[0009] A pixel body region, whose light receiving surface is distributed in the pixel region of the first end surface;

[0010] A non-pixel region, wherein the light receiving surface is distributed in the non-pixel region of the first end surface;

[0011] The first anti-reflection structure is disposed in the non-pixel region of the first end surface, at least partially covers the light-receiving surface of the non-pixel body region, and is suitable for reducing the reflectivity of the non-pixel body region to incident light.

[0012] Optionally, the first anti-reflection structure includes:

[0013] The first absorption layer is suitable for absorbing light in a target wavelength band.

[0014] Optionally, the first absorption layer comprises:

[0015] Photosensitive substrate.

[0016] Optionally, the first absorption layer further comprises:

[0017] The black dye is distributed in the photosensitive substrate.

[0018] Optionally, the first anti-reflection structure includes:

[0019] The first deflecting structure is suitable for deflecting light incident thereon.

[0020] Optionally, the non-pixel body region includes: a metal filling structure;

[0021] The first deflection structure is adapted to allow at least a portion of light incident thereon to pass through the gap of the metal filling structure;

[0022] and / or,

[0023] The first deflection structure is suitable for changing the wavefront shape of light incident thereon.

[0024] Optionally, the first deflection structure includes: a micro-nano optical structure.

[0025] Optionally, the micro-nano optical structure comprises: a plurality of micro-nano optical units, each of which comprises at least one of the following arrangements:

[0026] Periodic arrangement;

[0027] Random arrangement.

[0028] Optionally, the periodic arrangement includes at least one of the following:

[0029] Uniform periodic arrangement;

[0030] Non-uniform periodic arrangement.

[0031] Optionally, the multiple micro-nano optical units have the same or different sizes.

[0032] Optionally, the micro-nano optical structure includes at least one of the following:

[0033] Micro lens array structure;

[0034] Super surface structure;

[0035] Fresnel zone plate structure;

[0036] Conical structure;

[0037] Grating structure.

[0038] Optionally, the first deflection structure is suitable for causing light incident thereon to be directionally reflected.

[0039] Optionally, the first anti-reflection structure further includes:

[0040] The anti-reflection layer is arranged in the non-pixel area of ​​the first end surface, and is suitable for reducing the reflectivity of the light receiving surface of the non-pixel body area to the light of the target wavelength band.

[0041] Optionally, the anti-reflection layer is suitable for reducing the sensitivity of the reflectivity of the light-receiving surface of the non-pixel body area to the incident angle of light.

[0042] Optionally, the anti-reflection layer comprises:

[0043] A film structure composed of multiple sub-anti-reflection layers.

[0044] Optionally, the pixel body area includes:

[0045] A plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface;

[0046] The first anti-reflection structure is also arranged in the pixel area, at least partially covering the area between the photosensitive surfaces of the multiple light detection units, and is suitable for reducing the reflectivity of the pixel body area to the incident light.

[0047] Optionally, the pixel body area includes: a plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface;

[0048] The first anti-reflection structure further includes a second deflection structure, which is disposed in the pixel region and at least partially covers the photosensitive surfaces of the plurality of light detection units.

[0049] Optionally, the second deflection structure is suitable for increasing the light absorption rate of the first body;

[0050] and / or,

[0051] The second deflecting structure is suitable for changing the wavefront shape of light incident on the second deflecting structure.

[0052] Optionally, the second deflection structure comprises:

[0053] Micro-nano optical structures.

[0054] Optionally, the micro-nano optical structure comprises: a plurality of micro-nano optical units, each of which comprises at least one of the following arrangements:

[0055] Periodic arrangement;

[0056] Random arrangement.

[0057] Optionally, the periodic arrangement includes at least one of the following:

[0058] Uniform periodic arrangement;

[0059] Non-uniform periodic arrangement.

[0060] Optionally, the multiple micro-nano optical units have the same or different sizes.

[0061] Optionally, the micro-nano optical structure includes at least one of the following:

[0062] Micro lens array structure;

[0063] Super surface structure;

[0064] Fresnel zone plate structure;

[0065] Conical structure;

[0066] Grating structure.

[0067] Optionally, the pixel body area includes: a plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface;

[0068] The light detection unit includes at least one of the following:

[0069] Single photon avalanche diode;

[0070] Silicon photomultiplier tube;

[0071] Avalanche photodiode.

[0072] The embodiment of the present invention further provides a light-emitting chip, comprising a second end surface, a second main body and a second anti-reflection structure, wherein:

[0073] The second end surface is suitable for emitting detection light, and includes an emitting area and a non-emitting area;

[0074] The second subject comprises:

[0075] an emitter region, the light receiving surface of which is distributed in the emission region of the second end surface;

[0076] a non-emitter region, whose light receiving surface is distributed in the non-emitter region of the second end surface;

[0077] The second anti-reflection structure is disposed in the non-emitting region of the second end surface, at least partially covers the light-receiving surface of the non-emitter region, and is suitable for reducing the reflectivity of the non-emitter region to light.

[0078] Optionally, the second anti-reflection structure comprises:

[0079] The second absorption layer is suitable for absorbing light in a target wavelength band.

[0080] Optionally, the second absorbing layer comprises a photosensitive substrate.

[0081] Optionally, the second absorption layer includes a black dye distributed in the photosensitive substrate.

[0082] Optionally, the emitter region includes: a plurality of light-emitting units, whose light-emitting surfaces are distributed in the emission region of the second end surface;

[0083] The second anti-reflection structure is also arranged in the emission area, at least partially covering the area between the light-emitting surfaces of the plurality of light-emitting units, and is suitable for reducing the reflectivity of the emitter area to the incident light.

[0084] The embodiment of the present invention further provides a laser radar, including:

[0085] A laser, suitable for transmitting a detection signal of a target band to the outside world;

[0086] A detector, adapted to receive an echo signal returned by the detection signal after being reflected by an obstacle;

[0087] A processor, adapted to determine distance information of external obstacles according to the detection signal and the echo signal;

[0088] in:

[0089] The detector comprises: the light detection chip described in any of the above embodiments, and / or,

[0090] The laser includes: the light-emitting chip described in any of the above embodiments.

[0091] Optionally, the laser radar further includes:

[0092] case;

[0093] The absorber is arranged inside the shell and is suitable for absorbing the echo signal and / or the detection signal reflected by the detector and / or the laser to the inside of the shell.

[0094] By adopting the light detection chip provided by the embodiment of the present invention, by arranging the first anti-reflection structure in the non-pixel area of ​​the first end face and at least partially covering the light receiving surface of the non-pixel body area of ​​the first main body, the first anti-reflection structure can perform anti-reflection processing on the light incident to the area covered by it, and reduce the amount of reflection of the incident light in the covered area, thereby reducing the reflectivity of the non-pixel body area to light, and further reducing the reflectivity of the light detection chip to the incident light.

[0095] Furthermore, the first anti-reflection structure may include a first absorption layer suitable for absorbing light in a target wavelength band. When the incident light is incident on the area covered by the first absorption layer or is reflected to the outside through the area covered by the first absorption layer, it will be absorbed by the first absorption layer on its incident or reflection path. The first absorption layer can reduce the amount of reflection of the incident light in its coverage area by absorbing the light passing through the area covered by it, thereby reducing the reflectivity of the non-pixel area to light, and further reducing the reflectivity of the light detection chip to the incident light. In addition, since the first absorption layer is arranged in the non-pixel area of ​​the first end face, it can also block the influence of factors such as water vapor and dirt in the working environment on the light detection chip, which is beneficial to improving the reliability of the light detection chip.

[0096] Furthermore, the first absorption layer may include a photosensitive substrate, and the photosensitive substrate may be directly manufactured and integrated on the surface of the light detection chip through a semiconductor process, thereby reducing the difficulty of the process and being easy to implement.

[0097] Furthermore, since black dye has light absorption properties, the black dye distributed in the photosensitive substrate can increase the light absorption rate of the first absorption layer, thereby reducing the light reflectivity of the non-pixel area, and further reducing the reflectivity of the light detection chip to incident light.

[0098] Furthermore, by using the first deflection structure, at least part of the light incident thereon passes through the gap of the metal filling structure in the non-pixel body area, so that the part of the light can propagate in the non-pixel body area, thereby increasing the absorption rate of the incident light in the non-pixel body area by the non-pixel body area by increasing the optical path of the incident light in the non-pixel body area, and reducing the probability of the incident light being directly reflected by the metal filling structure, so the reflectivity of the non-pixel area to the incident light can be effectively reduced, thereby reducing the reflectivity of the light detection chip to the incident light. By changing the wavefront shape of the light incident thereon by the first deflection structure, the reflection direction of the reflected light can be controlled, and the amount of light within the original reflection angle range of the reflected light in the non-pixel area can be reduced, thereby reducing the ratio of the amount of light reflected from the non-pixel area within the original reflection angle range to the amount of incident light, and further reducing the reflectivity of the non-pixel area to the incident light in a specific direction.

[0099] Furthermore, by configuring the first deflection structure as a micro-nano optical structure, the first deflection structure can deflect incident light in its coverage area at the nanometer to micrometer level, thereby improving the accuracy and reliability of the processing result.

[0100] Furthermore, through multiple micro-nano optical units, the light incident on different positions in the non-pixel area can be adjusted uniformly or independently, so that precise control of smaller scales in the non-pixel area can be achieved, and the optical performance of the micro-nano optical structure can be optimized, further increasing the accuracy and adjustability of the micro-nano optical structure.

[0101] Furthermore, the periodically arranged multiple micro-nano optical units are convenient for mass production. At the same time, the optical response of the periodically arranged multiple micro-nano optical units has the characteristics of periodicity and regularity. By adjusting the corresponding period, shape and other parameters, the propagation and absorption of light in the target band in the non-pixel body area can be selectively modulated, thereby changing the reflectivity of the non-pixel body area to the incident light. The optical response of the randomly arranged multiple micro-nano optical units has nonlinear characteristics, which can increase the band range of light absorbed by the non-pixel body area, thereby improving the absorption rate of the non-pixel body area to the incident light, and then reducing the reflectivity of the non-pixel body area to the incident light.

[0102] Furthermore, by directionally reflecting the light incident thereon through the first deflection structure, the amount of light reflected from the non-pixel area within the original reflection angle range can be reduced, thereby reducing the ratio of the amount of light reflected from the non-pixel area within the original reflection angle range to the amount of incident light, thereby reducing the reflectivity of the non-pixel area to the incident light in a specific direction.

[0103] Furthermore, by setting a transmittance-enhancing layer in the non-pixel area of ​​the first end face, the transmittance of incident light in the target band can be increased, so that more incident light can interact with other anti-reflection structures in the first anti-reflection structure, thereby reducing the reflectivity of the coverage area to light in the target band.

[0104] Furthermore, by reducing the sensitivity of the reflectivity of the light-receiving surface of the non-pixel body area to the incident angle of light through the anti-reflection layer, the critical value corresponding to the incident angle entering the non-pixel area can be increased, thereby increasing the transmittance of light at different incident angles, and further reducing the reflectivity of the non-pixel body area to the incident light.

[0105] By adopting the light-emitting chip provided by the embodiment of the present invention, by arranging the second anti-reflection structure in the non-emitting area of ​​the second end face and at least partially covering the light-receiving surface of the non-emitter area of ​​the second body, the second anti-reflection structure can perform anti-reflection processing on the detection light incident on the area covered by it, thereby reducing the reflection amount of the detection light in the area covered by it, thereby reducing the reflectivity of the non-emitter area to light, and further reducing the reflectivity of the light-emitting chip to the incident light.

[0106] The laser radar provided by the embodiment of the present invention may include a laser, a detector and a processor. By using the light detection chip in any of the aforementioned embodiments as the detector, the reflectivity of the detector to the echo signal is reduced, and the interference of the echo signal due to reflection can be reduced, thereby improving the detection accuracy of the laser radar; and / or, by using the light-emitting chip in any of the aforementioned embodiments as the laser, the reflectivity of the laser to the detection signal is reduced, and the interference caused by reflection during the propagation of the detection signal can be reduced, thereby improving the detection accuracy of the laser radar. BRIEF DESCRIPTION OF THE DRAWINGS

[0107] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the drawings required for use in the embodiments of this specification or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0108] Figure 1 A schematic diagram of the principle of a double-distance ghost image is shown;

[0109] Figure 2A A schematic structural diagram of a light detection chip is shown;

[0110] Figure 2B Shows Figure 2A A top view of the light detection chip structure shown;

[0111] Figure 3 A schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown;

[0112] Figure 4 A schematic diagram showing a distribution mode of a metal filling structure in an embodiment of the present invention is shown;

[0113] Figure 5 A schematic diagram showing a distribution mode of a light detection photosensitive array in an embodiment of the present invention is shown;

[0114] Figure 6 A schematic diagram showing the structure of another light detection chip in an embodiment of the present invention is shown;

[0115] Figure 7 A schematic diagram showing the structure of another light detection chip in an embodiment of the present invention is shown;

[0116] Fig. 8A A schematic diagram showing a propagation path of incident light when no microlens array structure is provided in a non-pixel area in an embodiment of the present invention;

[0117] Figure 8BA schematic diagram showing a propagation path of incident light when a non-pixel area is provided with a microlens array structure in an embodiment of the present invention;

[0118] Fig.9A and Fig. 9B The schematic diagrams of the structures of various light detection chips in the embodiments of the present invention are shown;

[0119] FIG. 10A to FIG. 10C The schematic diagrams of the structures of various light detection chips in the embodiments of the present invention are shown;

[0120] Fig.11 A schematic diagram showing the structure of another light detection chip in an embodiment of the present invention is shown;

[0121] Fig.12 A schematic diagram showing the structure of another light detection chip in an embodiment of the present invention is shown;

[0122] Fig.13A A schematic diagram showing a propagation path of incident light when a microlens array structure is not provided in a pixel region in an embodiment of the present invention;

[0123] Fig. 13B A schematic diagram showing a propagation path of incident light when a microlens array structure is provided in a pixel region in an embodiment of the present invention;

[0124] Fig.14 Another schematic diagram of the principle of double-distance ghost images is shown;

[0125] Fig.15A A schematic structural diagram of a light-emitting chip in an embodiment of the present invention is shown;

[0126] Fig. 15B Shows Fig.15A A top view of the light-emitting chip structure shown;

[0127] Fig.16 A top view of another light emitting chip in an embodiment of the present invention is shown;

[0128] Fig.17 A schematic structural diagram of a laser radar in an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0129] As described in the background technology, in actual situations, the optical detection chip has a certain reflectivity for signal light. Among the signal light reflected from the outside world, some signal light will be reflected back to the outside world by the optical detection chip. The signal light reflected back to the outside world by the optical detection chip will reduce the detection accuracy of the laser radar, which is not conducive to the detection of the laser radar. For example, if the reflectivity of the optical detection chip is too high, the amount of signal light received by the optical detection chip will be too small, resulting in too few detection and analysis samples, reducing the detection accuracy. For another example, if the signal light reflected back to the outside world by the optical detection chip is reflected back to the optical detection chip by an obstacle again and absorbed by the optical detection chip again, it will form a multi-distance ghost image, reducing the detection accuracy.

[0130] Reference Figure 1 , Figure 1 The figure shows a schematic diagram of the principle of a double-range ghost image, where the laser radar L0 includes a transmitting end L01 and a receiving end L02, wherein the transmitting end L01 transmits a detection signal S1, which is reflected by an obstacle C0 to form an echo signal H1, which is received by a light detection chip at the receiving end L02. Since the surface of the light detection chip is relatively flat, if there is a strong mirror reflection on the surface of the light detection chip, part of the echo signal H2 will be reflected by the light detection chip and then reach the obstacle C0 again, thereby forming an echo signal H3 and being detected again by the light detection chip at the receiving end L02. The time of flight (TOF) of the echo signal H3 is approximately equal to twice that of the echo signal H1, which will result in a double-range ghost image appearing in the detection result at a distance twice the actual distance of the obstacle C0, thereby reducing the detection accuracy of the laser radar.

[0131] Therefore, how to provide an improved technical solution to reduce the reflectivity of the light detection chip has become a technical problem that technicians in this field need to solve urgently. In the research and experiments on how to reduce the reflectivity of the light detection chip, the inventors found that different positions of the light detection chip have different reflectivities based on different structures and materials.

[0132] For example, combined with reference Figure 2A and Figure 2B ,in, Figure 2A shows a schematic diagram of the structure using a light detection chip, Figure 2B Shows Figure 2AA top view of the structure of the optical detection chip. The optical detection chip 10 includes a first end face D1, a pixel body region 11 and a non-pixel body region 12, wherein a light detection photosensitive array 111 is provided in the pixel body region 11, and the light detection photosensitive array 111 can receive and detect signal light; a dummy metal (DM) array structure 121 is provided in the non-pixel body region 12, and the dummy metal array structure 121 can ensure the feasibility of the chip design in terms of physical, manufacturing and process requirements, and the dummy metal array structure 121 is provided at the periphery of the pixel body region 11. The first end face D1 includes a pixel region D11 and a non-pixel region D12, and the light receiving surface of the pixel body region 11 is distributed in the pixel region D11, and the light receiving surface of the non-pixel body region 12 is distributed in the non-pixel region D12. The light detection photosensitive array 111 in the pixel body area 11 has a high absorption rate for light incident on its light receiving surface, so the pixel body area 11 has a low reflectivity for light, while the metal material constituting the virtual metal array structure 121 has a low absorption rate for light, so the non-pixel body area D12 has a high reflectivity for light.

[0133] From the above, it can be seen that the non-pixel area has a higher reflectivity to light, and the light incident on the non-pixel area cannot be sensed and utilized by the light detection chip. Based on this, the inventor chooses to reduce the reflectivity of the light detection chip from the perspective of reducing the reflectivity of the non-pixel area to light.

[0134] In order to solve the above technical problems, an embodiment of the present invention provides a light detection chip, in which a first anti-reflection structure is arranged in a non-pixel area, and the first anti-reflection structure at least partially covers the light receiving surface of the non-pixel body area. The light incident on the above-mentioned light receiving surface is subjected to anti-reflection treatment by the first anti-reflection structure, and the reflectivity of the light in the non-pixel body area can be reduced, thereby reducing the reflectivity of the light detection chip to light and improving the detection accuracy.

[0135] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, the structure of the light detection chip in the embodiments of the present invention is explained below.

[0136] In some embodiments of the present invention, reference Figure 3 The schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown. The light detection chip may include: a first end face, a first body and a first anti-reflection structure 23, wherein:

[0137] The first end surface is suitable for receiving incident light and may include a pixel area D11 and a non-pixel area D12;

[0138] The first body may include a pixel body region 21 whose light receiving surface is distributed in the pixel region D11 and a non-pixel body region 22 whose light receiving surface is distributed in the non-pixel region D12;

[0139] The first anti-reflection structure 23 is disposed in the non-pixel region D12 and at least partially covers the light-receiving surface of the non-pixel region 22 , and is suitable for reducing the reflectivity of the non-pixel region 22 to incident light.

[0140] By adopting the above-mentioned technical solution, by setting the first anti-reflection structure in the non-pixel area of ​​the first end face and at least partially covering the light-receiving surface of the non-pixel body area of ​​the first main body, the first anti-reflection structure can perform anti-reflection processing on the light incident to its covered area, thereby reducing the amount of reflection of the incident light in the covered area, thereby reducing the reflectivity of the non-pixel body area to light, and further reducing the reflectivity of the light detection chip to the incident light.

[0141] In a specific implementation, the non-pixel body region may include a metal filling structure, wherein the metal filling structure may include a plurality of metal filling units distributed at intervals.

[0142] As an alternative example, see Figure 4 The schematic diagram of the distribution of the metal filling structure in the non-pixel body area shows that the multiple metal filling units 221e in the metal filling structure 221 are three-dimensionally stacked and distributed in the non-pixel body area 22. Specifically, the multiple metal filling units 221e can be distributed in intervals along the X-axis and Y-axis directions, and can also be distributed in intervals along the Z-axis direction. When incident light is incident on the light-receiving surface of the metal filling unit distributed in the non-pixel area D12, the incident light will be reflected.

[0143] In a specific implementation, the pixel body area may include a light detection photosensitive array, wherein the light detection photosensitive array may include a plurality of light detection units, and the photosensitive surfaces of the plurality of light detection units are distributed in the pixel area of ​​the first end surface.

[0144] As an alternative example, see Figure 5 The schematic diagram of the distribution of the light detection photosensitive array in the pixel body area is shown, wherein the light detection photosensitive array 211 is arranged in the pixel body area 21, and the photosensitive surfaces of the plurality of light detection units 211e included therein are distributed in a periodic array on the pixel area D11. When the incident light is incident on the photosensitive surface of the light detection unit in the pixel area, it will enter the pixel body area, propagate, and be absorbed by the pixel body area.

[0145] In a specific implementation, the specific type of the light detection unit can be selected according to the specific situation. For example, the light detection unit can be one or more of a single photon avalanche diode (SPAD), a silicon photomultiplier (SiPM) or an avalanche photodiode (APD).

[0146] In a specific implementation, a variety of first anti-reflection structures can be used to reduce the reflectivity of the non-pixel area to incident light.

[0147] In some embodiments of the present invention, the first anti-reflection layer may include a first absorption layer, which is suitable for absorbing light in the target band. Considering the application scenarios at the micro-nano level, the first absorption layer may include a photosensitive substrate. As an optional example, the photosensitive substrate may be a resin substrate. Specifically, the resin substrate is similar to a photoresist and can be directly manufactured and integrated on the surface of the light detection chip through a semiconductor process, which has the characteristics of low process difficulty and easy implementation.

[0148] Different types of resin substrates can be used according to different usage scenarios. For example, when applied to the field of laser radar, considering that the corresponding wavelength band of the laser radar detection light is usually between 900 and 1000 nm, the resin substrate can be one or more of a photosensitive resin substrate or an infrared absorbing resin substrate, which can effectively absorb light in the target wavelength band.

[0149] In a specific implementation, the first absorption layer may further include a black dye distributed in the photosensitive substrate. The black dye can effectively absorb visible light, increase the light absorption rate of the first absorption layer, and thus reduce the light reflectivity of the non-pixel area.

[0150] As an optional example, the black dye may include one or more of black organic dyes (such as black perylene-based dyes, black fluorene-based dyes, etc.) or black inorganic dyes (such as nano carbon black, etc.).

[0151] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, an optical detection chip in the embodiments of the present invention is explained below.

[0152] As an alternative example, see Figure 6A schematic structural diagram of a light detection chip in an embodiment of the present invention is shown, the light detection chip 20 includes: a first end face, a first main body, and a first anti-reflection structure, wherein: the first end face is suitable for receiving incident light, and the first end face includes a pixel area D11 and a non-pixel area D12; the first main body includes a pixel body area 21 whose light receiving surface is distributed in the pixel area D11, and a non-pixel body area 22 whose light receiving surface is distributed in the non-pixel area D12; the first anti-reflection structure is arranged in the non-pixel area D12 and covers the light receiving surface of the non-pixel body area 22, and the first anti-reflection structure includes a first absorption layer 231, and the first absorption layer 231 includes a resin substrate and a black inorganic dye distributed in the resin substrate.

[0153] The first anti-reflection structure may include a first absorption layer suitable for absorbing light in a target wavelength band. When incident light is incident on the area covered by the first absorption layer or is reflected to the outside through the area covered by the first absorption layer, it will be absorbed by the first absorption layer on its incident or reflection path. The first absorption layer can reduce the amount of reflection of the incident light in its covered area by absorbing the light passing through the covered area, thereby reducing the reflectivity of the non-pixel area to light, and further reducing the reflectivity of the light detection chip to the incident light.

[0154] In addition, since the first absorption layer is arranged in the non-pixel area of ​​the first end surface, it can also block the influence of factors such as moisture and dirt in the working environment on the light detection chip, which is beneficial to improving the reliability of the light detection chip.

[0155] In some other embodiments of the present invention, the first anti-reflection layer may include a first deflection structure, which can deflect light incident thereon. By deflecting the light incident thereon by the first deflection structure, the reflectivity of the non-pixel area to the incident light can be reduced.

[0156] It can be understood that the reflectivity of the non-pixel area to the incident light is not limited to including: the ratio of the amount of light reflected to the outside through the non-pixel area to the amount of incident light, but can also include: the ratio of the amount of light reflected to the target direction through the non-pixel area to the amount of incident light.

[0157] In a specific implementation, the first deflection structure may use one or more of the following deflection methods to reduce the reflectivity of the non-pixel area to the incident light.

[0158] As an optional example, the first deflection structure can enable at least a portion of the light incident thereon to pass through the gaps of the metal filling structure in the non-pixel body region.

[0159] Since the first deflection structure can allow part of the light incident thereon to pass through the gap of the metal filling structure in the non-pixel body area, the part of the light can propagate in the non-pixel body area without being directly reflected to the outside of the chip by the metal filling structure. Therefore, the optical path of the part of the light in the non-pixel body area can be increased, so that most of the light in the part of the light can be absorbed by the non-pixel body area, thereby increasing the absorption rate of the non-pixel body area to the incident light, and then reducing the reflectivity of the non-pixel area to the incident light.

[0160] As another optional example, the wavefront shape of the light incident on the first deflection structure may be changed by the first deflection structure.

[0161] By changing the wavefront shape of the light incident thereon through the first deflection structure, the reflection direction of the reflected light can be controlled. Compared with the light originally collimated and reflected in a specific direction (such as an obstacle), changing the wavefront shape of the light can reduce the amount of light reflected from the non-pixel area to the target direction, thereby reducing the ratio of the amount of light reflected from the non-pixel area to the amount of incident light, and further reducing the reflectivity of the non-pixel area to the incident light in the specific direction.

[0162] In a specific implementation, the first deflection structure may include a micro-nano optical structure.

[0163] The micro-nano optical structure refers to an optical structure with a characteristic size at the nanometer to micrometer level, which has the ability to change the travel path of light incident on its surface through refraction, scattering or diffraction effects. The first deflection structure is set to a micro-nano optical structure, which can deflect the incident light in its coverage area at the nanometer to micrometer level, thereby improving the accuracy and reliability of the processing results.

[0164] In a specific implementation, the micro-nano optical structure corresponding to the first deflection structure may include: a plurality of micro-nano optical units.

[0165] Through multiple micro-nano optical units, the light incident on different positions in the non-pixel area can be adjusted uniformly or independently, so that precise control of smaller scales in the non-pixel area can be achieved, and the optical performance of the micro-nano optical structure can be optimized, further increasing the accuracy and adjustability of the micro-nano optical structure.

[0166] In a specific implementation, the distribution of the plurality of micro-nano optical units corresponding to the first deflection structure on the non-pixel region of the first end surface may be one or more of a periodic arrangement or a random arrangement. Specifically, the periodic arrangement may include a uniform periodic arrangement or a non-uniform periodic arrangement.

[0167] The multiple micro-nano optical units arranged periodically are convenient for mass production. At the same time, the optical response of the multiple micro-nano optical units arranged periodically has the characteristics of periodicity and regularity. By adjusting the corresponding period, shape and other parameters, the propagation and absorption of light in the target band in the non-pixel body area can be selectively modulated, thereby changing the reflectivity of the non-pixel body area to the incident light. The optical response of the multiple micro-nano optical units arranged randomly has nonlinear characteristics, which can increase the band range of light absorbed by the non-pixel body area, thereby improving the absorption rate of the non-pixel body area to the incident light, and then reducing the reflectivity of the non-pixel body area to the incident light.

[0168] In a specific implementation, the multiple micro-nano optical units corresponding to the first deflection structure may have the same or different sizes.

[0169] In a specific implementation, the micro-nano optical structure corresponding to the first deflection structure can be realized by one or more structures, for example, one or more of a microlens array structure, a metasurface structure, a Fresnel zone plate structure, a conical structure, a grating structure, and the like.

[0170] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, another optical detection chip in the embodiments of the present invention is explained below.

[0171] As an alternative example, see Figure 7 The schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown in FIG. Figure 6 The difference between the optical detection chip structure is that the first anti-reflection structure includes a microlens array structure 232, and the microlens array structure includes a plurality of microlens units 232e, wherein the microlens unit 232e is a convex lens.

[0172] Reference Fig. 8A The diagram shows the propagation path of incident light when the microlens array structure is not set in the non-pixel area. Assuming that the incident light is vertically incident on the light receiving surface of the metal filling unit 221e on the non-pixel area D12 and the light receiving surface of the metal filling unit 221e in the non-pixel body area 22, the incident light is reflected by the light receiving surface and returns along the original path.

[0173] Reference Figure 8BThe schematic diagram of the propagation path of the incident light when the non-pixel area is provided with a microlens array structure is shown. Assuming that the incident light is collimated and incident on the light-receiving surface of the metal filling unit 221e in the non-pixel area D12, the incident light will first be incident on the microlens unit 232e. Except for part of the light reflected by the microlens unit 232e, the relevant parameters of the microlens unit are designed so that the remaining light can pass through the gaps between the metal filling units 221e after refraction and enter the non-pixel body area 22 for propagation. When propagating to the metal filling unit 221e inside the non-pixel body area 22, it can also be repeatedly reflected in the non-pixel body area 22, so that this part of the light can be further absorbed by the non-pixel body area 22.

[0174] The above scheme can increase the optical path of this part of light in the non-pixel body area, so that most of the light in this part of light can be absorbed by the non-pixel body area, increasing the absorption rate of the non-pixel body area to the incident light, thereby reducing the reflectivity of the non-pixel area to the incident light.

[0175] Continue to refer to Figure 8B Since the microlens unit 232e is a convex lens, the curvature of the convex surface of the microlens unit 232e is different at different positions, and the light incident on its surface is reflected at different angles, so the microlens unit 232e can change the wavefront shape of the part of the light reflected by it, so that the reflection angle range of the reflected light is increased. Compared with the collimated reflected light, the microlens unit can further reduce the amount of light reflected from the non-pixel body area to the original collimated direction, thereby reducing the ratio of the amount of light reflected from the non-pixel area to the collimated direction to the amount of incident light.

[0176] In addition, the distribution of the microlens array structure on the non-pixel area may be one or more of uniform periodic arrangement, non-uniform periodic arrangement or random arrangement, and the size of each microlens unit may be consistent or inconsistent.

[0177] Specifically, the distribution of the microlens array structure on the non-pixel area and the size of each microlens unit can be designed according to the distribution of the light-receiving surface of the metal filling structure in the non-pixel area, so that as much light as possible can be refracted by the microlens array structure through the gaps between the metal filling units, enter the non-pixel body area, propagate, and finally be absorbed by the non-pixel body area.

[0178] It can be understood that the distribution of the above-mentioned microlens array structure in the non-pixel area is only an exemplary description, and the distribution of other micro-nano optical structures (such as metasurface structure, Fresnel zone plate structure, conical structure, grating structure, etc.) in the non-pixel area and the size of each micro-nano optical unit can also be designed according to the distribution of the light-receiving surface of the metal filling structure in the non-pixel area.

[0179] In a specific implementation, the light incident thereon can be directionally reflected by the first deflection structure. By directionally reflecting the light incident thereon by the first deflection structure, the amount of light reflected from the non-pixel area to a specific direction can be reduced, thereby reducing the ratio of the amount of light reflected from the non-pixel area to the amount of incident light, and further reducing the reflectivity of the non-pixel area to the incident light in a specific direction.

[0180] In a specific implementation, the specific structure of the first deflection structure may be determined according to specific circumstances. As an optional example, the first deflection structure may include a metasurface structure provided with a grating structure and a plurality of metasurface units.

[0181] Specifically, the directional reflection may include reflection toward any one or more directions except a specific direction.

[0182] In some other embodiments of the present invention, the first anti-reflection layer may include an anti-reflection layer, and the anti-reflection layer is arranged in the non-pixel area of ​​the first end surface, which can reduce the reflectivity of the light receiving surface of the non-pixel body area to the light of the target band.

[0183] Specifically, by setting a transmittance-enhancing layer in the non-pixel area of ​​the first end face, the transmittance of incident light in the target band can be increased, so that more incident light can interact with other anti-reflection structures in the first anti-reflection structure, thereby reducing the reflectivity of the coverage area to light in the target band.

[0184] In a specific implementation, the anti-reflection layer can also reduce the sensitivity of the reflectivity of the light-receiving surface of the non-pixel body area to the incident angle of light. By reducing the sensitivity of the reflectivity of the light-receiving surface of the non-pixel body area to the incident angle of light, the anti-reflection layer can increase the critical value corresponding to the incident angle entering the non-pixel area, thereby increasing the transmittance of light at different incident angles, and further reducing the reflectivity of the non-pixel body area to the incident light.

[0185] As an optional example, the anti-reflection layer can reduce the sensitivity of the reflectivity of the light-receiving surface of the non-pixel region to the incident angle of light by a film structure composed of multiple sub-anti-reflection layers. Specifically, the anti-reflection layer can make the reflectivity of the anti-reflection layer less sensitive to the change of the incident angle within a certain range by selecting a suitable material combination and layer thickness for each sub-anti-reflection layer. For example, a film structure composed of multiple sub-anti-reflection layers with a gradient refractive index design can be used.

[0186] It should be noted that the anti-reflection layer can be used in combination with the first absorption layer and the first deflection structure disposed in the non-pixel area.

[0187] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, another optical detection chip in the embodiments of the present invention is explained below.

[0188] In some embodiments of the present invention, reference Fig.9A The schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown in FIG. Figure 6 The difference of the light detection chip structure shown is that, in addition to the first absorption layer 231, the first anti-reflection structure further includes: an anti-reflection layer 233, which is arranged on the end surface of the first absorption layer 231 away from the non-pixel body area 22. The anti-reflection layer includes a film system structure composed of multiple sub-anti-reflection layers designed with a gradient refractive index.

[0189] The light-receiving surface side of the non-pixel body area is covered with an anti-reflection layer, and the incident light will pass through the anti-reflection layer in the process of being incident on the light-receiving surface and being reflected to the outside by the light-receiving surface. Since the anti-reflection layer can increase the transmittance of the incident light in the target band, so that more incident light can react with the first absorption layer, the reflectivity of the light-receiving surface of the non-pixel body area to the incident light in the target band can be further reduced. At the same time, the anti-reflection layer has a film system structure composed of multiple sub-anti-reflection layers designed with a gradient refractive index, which can reduce the sensitivity of the reflectivity of the first absorption layer to the incident angle of light, and can increase the critical value corresponding to the incident angle entering the non-pixel area, thereby increasing the transmittance of light at different incident angles, and further reducing the reflectivity of the non-pixel body area to the incident light.

[0190] As an optional implementation, refer to Fig. 9B FIG. 1 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention. Fig.9A The difference of the light detection chip structure shown is that the anti-reflection layer 233 can be arranged not only on the end surface of the first absorption layer 231 away from the non-pixel body area 22, but also on the light receiving surface side of the pixel body area 21.

[0191] The light-receiving side of the pixel body area is covered with an anti-reflection layer, which can increase the transmittance of incident light in the target band, so that more incident light can enter the pixel body area and be absorbed by the pixel body area, thereby improving the absorption rate and detection efficiency of the pixel body area for incident light, thereby further reducing the reflectivity of the light detection chip to the incident light in the target band.

[0192] In other embodiments of the present invention, referring to Fig. 10A The schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown in FIG. Figure 7 The difference of the light detection chip structure is that the first anti-reflection structure, in addition to the microlens array structure 232, also includes: an anti-reflection layer 233, which is arranged between the microlens array structure 232 and the non-pixel body area 22. The anti-reflection layer 233 includes a film system structure composed of multiple sub-anti-reflection layers designed with a gradient refractive index.

[0193] As an alternative example, refer to Fig. 10B FIG. 1 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention. Figure 7 The difference of the light detection chip structure shown is that the first anti-reflection structure, in addition to the microlens array structure 232 , further includes: an anti-reflection layer 233 , which is arranged on the end surface of the microlens array structure 232 away from the non-pixel body area 22 .

[0194] As another alternative example, refer to Fig. 10C FIG. 1 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention. Fig. 10B The difference of the light detection chip structure shown is that the anti-reflection layer 233 can be arranged not only on the end surface of the microlens array structure 232 away from the non-pixel body area 22, but also on the light receiving surface side of the pixel body area 21.

[0195] In the chip design, the isolation grooves between adjacent light detection units also have a light receiving surface on the pixel area, and the light receiving surface is distributed in the area between the photosensitive surfaces of the light detection units. The light incident on this area cannot enter the light detection unit. Based on the material characteristics of the isolation grooves, the light receiving surface has a higher reflectivity to the incident light.

[0196] To solve the above problem, in a specific implementation, the first anti-reflection structure can also be arranged in the pixel area, at least partially covering the area between the photosensitive surfaces of the multiple light detection units, suitable for reducing the reflectivity of the pixel body area to the incident light.

[0197] As an alternative example, see Fig.11The schematic diagram of the structure of a light detection chip in an embodiment of the present invention is shown in the figure, showing that the pixel body area of ​​the light detection chip includes a light detection photosensitive array 211 and an isolation groove 212, wherein the light detection photosensitive array 211 includes a plurality of light detection units 211e, and adjacent light detection units 211e are isolated by isolation grooves 212; the pixel area includes the light-sensitive surface of the light detection unit and the light-receiving surface of the isolation groove 212. Figure 6 The difference of the light detection chip structure is that the first absorption layer 231 in this example is disposed on the non-pixel area D12 and the light receiving surface of the isolation groove 212 .

[0198] When the incident light is incident on the light-receiving surface of the isolation groove, it will propagate within the first absorption layer covering the light-receiving surface; based on the light absorption characteristics of the first absorption layer, the first absorption layer can effectively absorb the incident light, thereby reducing the amount of light reflected from the light-receiving surface to the outside world, thereby reducing the reflectivity of the pixel body area to light.

[0199] In a specific implementation, the reflectivity corresponding to the photosensitive surface of the light detection chip may be optimized to further reduce the reflectivity of the light detection chip to the incident light.

[0200] In a specific implementation, the first anti-reflection structure also includes a second deflection structure, which is arranged in the pixel area and at least partially covers the photosensitive surfaces of the multiple light detection units, and is suitable for reducing the reflectivity of the light detection chip to incident light.

[0201] It can be understood that the reflectivity of the light detection chip to the incident light is not limited to: the ratio of the amount of light reflected to the outside by the light detection chip to the amount of incident light, but can also include: the ratio of the amount of light reflected to the target direction by the light detection chip to the amount of incident light.

[0202] Specifically, the second deflection structure can reduce the reflectivity of the light detection chip to the incident light in a variety of ways.

[0203] As an optional example, the second deflection structure may reduce the reflectivity of the light detection chip by increasing the light absorption rate of the first body.

[0204] By increasing the absorption rate of the first body to incident light through the second deflection structure, the amount of light reflected from the pixel area to the outside world can be reduced, thereby reducing the amount of light reflected from the light detection chip to the outside world, and further reducing the reflectivity of the light detection chip.

[0205] As another optional example, the second deflection structure may reduce the reflectivity of the pixel area by changing the wavefront shape of the light incident on the second deflection structure.

[0206] By changing the wavefront shape of light incident on the second deflection structure through the second deflection structure, the range of the reflection angle of the reflected light can be increased. Compared with the light originally collimated and reflected toward the target (such as an obstacle), changing the wavefront shape of the light can reduce the amount of light reflected from the pixel area to the target direction, thereby reducing the ratio of the amount of light reflected from the pixel area to the target direction to the amount of incident light, and further reducing the reflectivity of the light detection chip to the incident light.

[0207] In a specific implementation, the second deflection structure includes: a micro-nano optical structure. Setting the second deflection structure as a micro-nano optical structure can improve the adaptability to the size of the pixel area.

[0208] In a specific implementation, the micro-nano optical structure corresponding to the second deflection structure may include: a plurality of micro-nano optical units. Through the plurality of micro-nano optical units, light incident on different regions of the pixel region is uniformly or independently adjusted, so that precise control of smaller regional units in the pixel region can be achieved, thereby optimizing the optical performance of the micro-nano optical structure and increasing its accuracy and adjustability.

[0209] In a specific implementation, the distribution of the plurality of micro-nano optical units corresponding to the second deflection structure on the pixel area of ​​the first end surface may be one or more of a periodic arrangement or a random arrangement. Specifically, the periodic arrangement may include a uniform periodic arrangement or a non-uniform periodic arrangement.

[0210] For the periodically arranged multiple micro-nano optical units, their optical response is periodic and regular. By adjusting the corresponding period, shape and other parameters, the propagation and absorption of light in the target band in the first body can be selectively modulated, thereby changing the reflectivity of the light detection chip to the incident light. Using a plurality of randomly arranged micro-nano optical units can increase the wavelength range of light absorbed by the first body, thereby improving the absorption rate of the first body to the incident light, and further reducing the reflectivity of the light detection chip to the incident light.

[0211] In a specific implementation, the multiple micro-nano optical units corresponding to the second deflection structure may have the same or different sizes.

[0212] In a specific implementation, the micro-nano optical structure corresponding to the second deflection structure can be realized by one or more of a microlens array structure, a metasurface structure, a Fresnel zone plate structure, a conical structure, a grating structure, and the like.

[0213] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, another optical detection chip in the embodiments of the present invention is explained below.

[0214] As an alternative example, see Fig.12 The schematic diagram of the structure of another optical detection chip in an embodiment of the present invention is shown, the optical detection chip comprises: a first end face, a first main body, and a first anti-reflection structure, wherein:

[0215] The first end face includes a pixel area and a non-pixel area; the first main body includes a pixel body area 31 whose light receiving surface is distributed in the pixel area and a non-pixel body area 32 whose light receiving surface is distributed in the non-pixel area; the pixel body area 31 includes a light detection photosensitive array 311, and the light detection photosensitive array 311 includes a plurality of light detection units 311e, whose photosensitive surfaces are distributed in the pixel area; the first anti-reflection structure includes a first deflection structure 33 and a second deflection structure 34, the first deflection structure 33 is arranged in the area between the non-pixel area D12 and the photosensitive surfaces of the plurality of light detection units 311e, and the first deflection structure 33 can specifically be a first absorption layer; the second deflection structure 34 is arranged on the photosensitive surface of the light detection unit 311e; the second deflection structure 34 can specifically be a microlens array structure, and the microlens array structure includes a plurality of microlens units, wherein the microlens unit is a convex lens.

[0216] Reference Fig.13A The schematic diagram of the propagation path of the incident light when the microlens array structure is not set in the pixel area shown, assuming that the incident light is collimated and incident on the photosensitive surface of the light detection unit 311e in the pixel area D11, part of the incident light is reflected by the photosensitive surface of the light detection unit 311e, and the other part directly enters the light detection unit and propagates vertically.

[0217] Reference Fig. 13B The schematic diagram of the propagation path of the incident light when the pixel area is provided with a microlens array structure is shown. Assuming that the incident light is collimated and incident on the photosensitive surface of the light detection unit 311e in the pixel area D11, the incident light will first be incident on the microlens unit 34e. Except for part of the light reflected by the microlens unit 34e, the remaining light enters the light detection unit 311e after being refracted and propagates. Based on the existence of the refraction angle, the optical path of this part of the light in the light detection unit 311e is increased after refraction, thereby improving the absorption rate of the light detection unit 311e to the incident light, and then reducing the reflectivity of the light detection chip to the incident light.

[0218] Continue to refer to Fig. 13BSince the microlens unit 34e is a convex lens, the curvature of the convex surface of the microlens unit 34e is different at different positions, and the light incident on its surface is reflected at different angles (for example, reflection angles α and β), the microlens unit 34e can change the wavefront shape of the part of the light reflected by it, so that the reflection angle range of the reflected light is increased. Compared with the collimated reflected light, the microlens unit can further reduce the amount of light reflected from the pixel body area to the original collimated direction, thereby reducing the ratio of the amount of light reflected from the pixel area to the collimated direction to the amount of incident light.

[0219] In actual work, not only the high reflectivity of the light detection chip is prone to cause double-distance ghost images, but the high reflectivity of the light emitting chip may also cause double-distance ghost images. Fig.14 Another schematic diagram of the principle of double-range ghost image is shown, where the laser radar L1 includes a transmitting end L11 and a receiving end L12, wherein the light-emitting chip of the transmitting end L11 transmits a detection signal S1, which is reflected by the obstacle C1 to form an echo signal H1 and is received by the receiving end L12. At this time, part of the detection signal S2 is reflected by the obstacle C1 and returns to the light-emitting chip. Since the surface of the light-emitting chip is relatively flat, if there is a strong mirror reflection on the surface of the light-emitting chip, part of the detection signal S21 will be reflected by the light-emitting chip and reach the obstacle C1 again, and after being reflected by the obstacle C1, a second echo signal H2 is formed and detected by the receiving end L12. The flight time (Time Of Flight, TOF) of the echo signal H2 is also approximately equal to twice that of the echo signal H1, which will cause the detection result to appear a double-range ghost image at twice the actual distance of the obstacle C1 being measured. Therefore, how to reduce the reflectivity of the light-emitting chip is an urgent problem to be solved.

[0220] In order to solve the above technical problems, an embodiment of the present invention provides a light-emitting chip, wherein a second anti-reflection structure is arranged in a non-emitting area, and the second anti-reflection structure at least partially covers the light-receiving surface of the non-emitter area. The light incident on the above-mentioned light-receiving surface is subjected to anti-reflection treatment by the second anti-reflection structure, so that the reflectivity of the non-emitter area to the light can be reduced, thereby reducing the reflectivity of the light-emitting chip to the light.

[0221] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, the structure of the light-emitting chip in the embodiments of the present invention is explained below.

[0222] In some embodiments of the present invention, the light emitting chip may include: a second end surface, a second body, and a second anti-reflection structure, wherein:

[0223] The second end surface is suitable for emitting detection light, and includes an emitting area and a non-emitting area;

[0224] The second body includes an emitter region whose light receiving surface is distributed in the emission region and a non-emitter region whose light receiving surface is distributed in the non-emission region;

[0225] The second anti-reflection structure is disposed in the non-emitting area, at least partially covers the light-receiving surface of the non-emitter area, and is suitable for reducing the reflectivity of the non-emitter area to light.

[0226] By adopting the above-mentioned technical solution, by arranging the second anti-reflection structure in the non-emitting area and at least partially covering the light-receiving surface of the non-emitter area, the second anti-reflection structure can perform anti-reflection processing on the detection light incident on the area covered by it, thereby reducing the amount of reflection of the detection light in the area covered by it, thereby reducing the reflectivity of the non-emitter area to light, and further reducing the reflectivity of the light-emitting chip to the incident light.

[0227] In a specific implementation, the light emitting chip may emit light perpendicularly to the second end face. The specific structure of the light emitting chip may be determined according to specific circumstances. For example, the light emitting chip may include a vertical-cavity surface-emitting laser (VCSEL) chip.

[0228] As an optional implementation, the light emitting chip may be one or more of a single-mode VCSEL chip, a multi-mode VCSEL chip, a high-power VCSEL chip or a tunable VCSEL chip.

[0229] In a specific implementation, the emitter region may include a plurality of light-emitting units, whose light-emitting surfaces are distributed in the emission region of the second end surface.

[0230] In a specific implementation, the second anti-reflection layer may include a second absorption layer suitable for absorbing light in a target wavelength band.

[0231] In a specific implementation, the second absorption layer may further include a black dye distributed in the photosensitive substrate.

[0232] In a specific implementation, the configuration of the second absorption layer may refer to the relevant configuration of the first absorption layer in any embodiment in this specification, and will not be described in detail here.

[0233] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, a light-emitting chip in the embodiments of the present invention is explained below.

[0234] As an alternative example, see Fig.15A A schematic diagram of the structure of a light-emitting chip in an embodiment of the present invention is shown, and Fig. 15B Shown Fig.15A A top view of the structure shown. The light-emitting chip 40 includes: a second end face, a second main body, and a second anti-reflection structure, wherein: the second end face is suitable for receiving incident light, and the second end face includes an emission area D21 and a non-emission area D22; the second main body includes an emitter area 41 whose light-receiving surface is distributed in the emission area D21 and a non-emitter area 42 whose light-receiving surface is distributed in the non-emission area D22; the emitter area 41 includes a plurality of light-emitting units 411, whose light-emitting surfaces are distributed in the emission area D21 of the second end face D2. The second anti-reflection structure is arranged in the non-emission area D22, and the second anti-reflection structure includes a second absorption layer 43, and the second absorption layer 43 includes a resin substrate and a black inorganic dye distributed in the resin substrate.

[0235] When the reflected detection light is incident on the non-emitting area, it will propagate in the second absorption layer covering the corresponding area; based on the light absorption characteristics of the resin substrate and the black inorganic dye, the second absorption layer can absorb the incident detection light, thereby reducing the amount of light reflected to the outside from the non-emitter area, reducing the reflectivity of the non-emitter area to light, and further reducing the reflectivity of the light-emitting chip to the detection light. In addition, the second absorption layer can also block the influence of factors such as water vapor and dirt in the working environment on the surface of the light-emitting chip, which is conducive to improving the reliability of the light-emitting chip.

[0236] In a specific implementation, the second anti-reflection structure may also be disposed in the emission region, at least partially covering the region between the light-emitting surfaces of the plurality of light-emitting units, and is suitable for reducing the reflectivity of the emitter region to incident light.

[0237] As an alternative example, see Fig.16 FIG. 1 is a top view of another light-emitting chip structure in an embodiment of the present invention. Fig. 15B In the light-emitting chip structure shown, the second absorption layer 43 of the light-emitting chip in this example is not only arranged in the non-emitting area, but also arranged in the area between the light-emitting surfaces of the plurality of light-emitting units 411 .

[0238] The reflected detection light will propagate within the second absorption layer covering the corresponding area during the process of being incident on the area between the light-emitting surfaces of multiple light-emitting units; based on the light absorption characteristics of the resin substrate and the black inorganic dye, the second absorption layer can absorb the incident detection light, thereby reducing the amount of light reflected to the outside from the emitter area, reducing the reflectivity of the emitter area to light, and thereby reducing the reflectivity of the light-emitting chip to the detection light.

[0239] The embodiment of the present invention further provides a laser radar, referring to Fig.17The schematic diagram of the structure of a laser radar in an embodiment of the present invention is shown, and the laser radar L2 may include: a laser L21, a detector L22 and a processor (not shown in the figure), wherein:

[0240] The laser L21 is suitable for transmitting a detection signal of a target band to the outside world;

[0241] The detector L22 is adapted to receive the echo signal returned by the detection signal after being reflected by the obstacle C2;

[0242] The processor is adapted to determine the distance information of the external obstacle C2 according to the detection signal and the echo signal.

[0243] In a specific implementation, the laser in the embodiment of the present invention can be implemented using the light-emitting chip described in any of the aforementioned embodiments. For details, please refer to the aforementioned embodiments, which will not be shown and described again here.

[0244] When the detection signal generated by the laser to the outside world is reflected back to the light-emitting chip by an obstacle, the laser can reduce the reflectivity of the detection signal by adopting the light-emitting chip described in any of the aforementioned embodiments, thereby reducing the double ghost image problem in the detection result.

[0245] In a specific implementation, the detector in the embodiment of the present invention can be implemented by using the light detection chip described in any of the aforementioned embodiments. For details, please refer to the aforementioned embodiments, which will not be shown and described here.

[0246] When the echo signal reflected by the detector to the outside is reflected back to the light detection chip by the obstacle, the detector can reduce the reflectivity of the detector to the echo signal by adopting the light detection chip described in any of the above embodiments, thereby reducing the double ghost problem in the detection result.

[0247] Based on the settings of the detector and the laser, some echo signals are reflected by the detector into the interior of the laser radar, and some detection signals are reflected by the laser into the interior of the laser radar. The above echo signals and detection signals propagate inside the laser radar, which may cause noise crosstalk inside the laser radar.

[0248] In order to solve this problem, in a specific implementation, the laser radar may also include: a shell and an absorber, wherein: the absorber is arranged inside the shell and is suitable for absorbing the echo signal and / or the detection signal reflected by the detector and / or the laser to the inside of the shell.

[0249] By absorbing the echo signal and / or detection signal reflected by the detector and / or laser to the inside of the shell through the absorber, the noise inside the laser radar can be reduced, thereby reducing the noise crosstalk inside the laser radar.

[0250] In a specific implementation, the detector and / or laser can directionally reflect or focus the incident echo signal and / or detection signal, and the absorber is arranged on the corresponding reflection path or at the corresponding focal position.

[0251] The detector and / or laser directionally reflects or focuses the incident echo signal and / or detection signal by optimizing the noise control strategy, so that the absorber can achieve efficient absorption of noise on the corresponding reflection path or at the corresponding focal position.

[0252] The above describes multiple implementation schemes provided by the embodiments of the present invention. The various optional methods introduced in each implementation scheme can be combined and cross-referenced with each other without conflict, thereby extending a variety of possible implementation schemes, which can all be considered as implementation schemes disclosed and open in the embodiments of the present invention.

[0253] Although the embodiments of the present invention are disclosed above, the present invention is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of this specification shall be subject to the scope defined by the claims.

Claims

1. A light detection chip, characterized in that: It includes a first end face, a first main body and a first anti-reflection structure, wherein: The first end surface is suitable for receiving incident light and includes a pixel area and a non-pixel area; The first entity includes: A pixel body region, whose light receiving surface is distributed in the pixel region of the first end surface; A non-pixel region, wherein the light receiving surface is distributed in the non-pixel region of the first end surface; The first anti-reflection structure is disposed in the non-pixel region of the first end surface, at least partially covers the light-receiving surface of the non-pixel body region, and is suitable for reducing the reflectivity of the non-pixel body region to incident light.

2. The chip according to claim 1, characterized in that: The first anti-reflection structure comprises: The first absorption layer is suitable for absorbing light in a target wavelength band.

3. The chip according to claim 2, characterized in that: The first absorption layer comprises: Photosensitive substrate.

4. The chip according to claim 3, characterized in that: The first absorption layer further comprises: The black dye is distributed in the photosensitive substrate.

5. The chip according to claim 1, characterized in that: The first anti-reflection structure comprises: The first deflecting structure is suitable for deflecting light incident thereon.

6. The chip according to claim 5, characterized in that: The non-pixel body region includes: a metal filling structure; The first deflection structure is adapted to allow at least a portion of light incident thereon to pass through the gap of the metal filling structure; and / or, The first deflection structure is suitable for changing the wavefront shape of light incident thereon.

7. The chip according to claim 6, characterized in that: The first deflection structure comprises: Micro-nano optical structures.

8. The chip according to claim 7, characterized in that: The micro-nano optical structure comprises: a plurality of micro-nano optical units, each of which comprises at least one of the following arrangements: Periodic arrangement; Random arrangement.

9. The chip according to claim 8, characterized in that: The periodic arrangement includes at least one of the following: Uniform periodic arrangement; Non-uniform periodic arrangement.

10. The chip according to claim 8, characterized in that: The multiple micro-nano optical units have the same or different sizes.

11. The chip according to claim 7, characterized in that: The micro-nano optical structure includes at least one of the following: Micro lens array structure; Super surface structure; Fresnel zone plate structure; Conical structure; Grating structure.

12. The chip according to claim 5, characterized in that: The first deflection structure is suitable for causing light incident thereon to be directionally reflected.

13. The chip according to any one of claims 2 to 12, characterized in that: The first anti-reflection structure further comprises: The anti-reflection layer is arranged in the non-pixel area of ​​the first end surface, and is suitable for reducing the reflectivity of the light receiving surface of the non-pixel body area to the light of the target wavelength band.

14. The chip according to claim 13, characterized in that: The anti-reflection layer is suitable for reducing the sensitivity of the reflectivity of the light-receiving surface of the non-pixel body area to the incident angle of light.

15. The chip according to claim 14, characterized in that: The anti-reflection layer comprises: A film structure composed of multiple sub-anti-reflection layers.

16. The chip according to any one of claims 2 to 4, characterized in that: The pixel body area includes: a plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface; The first anti-reflection structure is also arranged in the pixel area, at least partially covering the area between the photosensitive surfaces of the multiple light detection units, and is suitable for reducing the reflectivity of the pixel body area to the incident light.

17. The chip according to any one of claims 2 to 12, characterized in that: The pixel body area includes: a plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface; The first anti-reflection structure further includes a second deflection structure, which is disposed in the pixel region and at least partially covers the photosensitive surfaces of the plurality of light detection units.

18. The chip according to claim 17, characterized in that: The second deflection structure is suitable for increasing the light absorption rate of the first body; and / or, The second deflecting structure is suitable for changing the wavefront shape of light incident on the second deflecting structure.

19. The chip according to claim 18, characterized in that: The second deflection structure comprises: Micro-nano optical structures.

20. The chip according to claim 19, characterized in that: The micro-nano optical structure comprises: a plurality of micro-nano optical units, each of which comprises at least one of the following arrangements: Periodic arrangement; Random arrangement.

21. The chip according to claim 20, characterized in that: The periodic arrangement includes at least one of the following: Uniform periodic arrangement; Non-uniform periodic arrangement.

22. The chip according to claim 20, characterized in that: The multiple micro-nano optical units have the same or different sizes.

23. The chip according to claim 19, characterized in that: The micro-nano optical structure includes at least one of the following: Micro lens array structure; Super surface structure; Fresnel zone plate structure; Conical structure; Grating structure.

24. The chip according to claim 1, characterized in that The pixel body area includes: a plurality of light detection units, whose photosensitive surfaces are distributed in the pixel area of ​​the first end surface; The light detection unit includes at least one of the following: Single photon avalanche diode; Silicon photomultiplier tube; Avalanche photodiode.

25. A light-emitting chip, characterized in that: It includes a second end face, a second main body and a second anti-reflection structure, wherein: The second end surface is suitable for emitting detection light, and includes an emitting area and a non-emitting area; The second subject comprises: an emitter region, the light receiving surface of which is distributed in the emission region of the second end surface; a non-emitter region, whose light receiving surface is distributed in the non-emitter region of the second end surface; The second anti-reflection structure is disposed in the non-emitting region of the second end surface, at least partially covers the light-receiving surface of the non-emitter region, and is suitable for reducing the reflectivity of the non-emitter region to light.

26. The light-emitting chip according to claim 25, characterized in that: The second anti-reflection structure comprises: The second absorption layer is suitable for absorbing light in a target wavelength band.

27. The light emitting chip according to claim 26, characterized in that: The second absorbing layer includes a photosensitive substrate.

28. The light emitting chip according to claim 27, characterized in that: The second absorption layer includes a black dye distributed in the photosensitive substrate.

29. The light-emitting chip according to any one of claims 26 to 28, characterized in that: The emitter region includes: a plurality of light-emitting units, whose light-emitting surfaces are distributed in the emission region of the second end surface; The second anti-reflection structure is also arranged in the emission area, at least partially covering the area between the light-emitting surfaces of the plurality of light-emitting units, and is suitable for reducing the reflectivity of the emitter area to the incident light.

30. A laser radar, characterized in that: include: A laser, suitable for transmitting a detection signal of a target band to the outside world; A detector, adapted to receive an echo signal returned by the detection signal after being reflected by an obstacle; A processor, adapted to determine distance information of external obstacles according to the detection signal and the echo signal; in: The detector comprises: a light detection chip as claimed in any one of claims 1 to 24, and / or, The laser comprises: a light-emitting chip as claimed in any one of claims 25-29.

31. The laser radar according to claim 30, characterized in that: Also includes: case; The absorber is arranged inside the shell and is suitable for absorbing the echo signal and / or the detection signal reflected by the detector and / or the laser to the inside of the shell.

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