TSV adapter plate, manufacturing method thereof and three-dimensional chip

Abstract

The invention provides a TSV adapter plate, a manufacturing method thereof and a three-dimensional chip, the TSV adapter plate comprises a substrate, the interior of the substrate is provided with a cavity and a first structure layer covering a part of the inner wall of the cavity, and the material type of the first structure layer is different from that of the substrate; the through hole structure penetrates through the substrate and is positioned on one side of the cavity; the liquid metal is located in the cavity, and the liquid metal and the first structural layer comprise the same material element. According to the invention, the problem of poor heat dissipation capability of the TSV adapter plate in the prior art is solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a TSV adapter board, a manufacturing method thereof, and a three-dimensional chip. Background Art

[0002] In recent years, with the in-depth research and rapid progress of integrated circuit packaging design, the integration of chips has been greatly improved, and the three-dimensional chip integration technology based on TSV (Through-Silicon Via) has also been widely discussed and studied, which has put forward higher technical standards and requirements for chip packaging technology. At present, some existing packaging technologies have large signal loss in chip stacking transmission; after chip stacking, the heat generation increases, but the corresponding heat dissipation area does not increase, resulting in a sharp increase in heat density; in addition, although multi-chip packaging can still maintain the original heat dissipation area, the corresponding connection between the heat sources of different chips leads to the strengthening of thermal coupling, which in turn causes more severe thermal problems; for RF chips, the most commonly used frequency bands for satellite services are C (4-8GHz) and Ku (12-18GHz) bands. Although the Ka band has a larger available frequency bandwidth, its rain attenuation effect is more serious, and the requirements for devices and processes are higher, and it has been developing slowly. In addition, with the continuous improvement of the computing power and power consumption of the central processing unit (CPU), how to efficiently dissipate heat has become an urgent problem to be solved. In actual application scenarios, there are higher requirements for the stress and strain conditions, signal stability and radiation resistance of chips under extreme working conditions, and related low-loss and heat dissipation technologies urgently need to be improved. Summary of the invention

[0003] The main purpose of the present application is to provide a TSV adapter board, a manufacturing method thereof and a three-dimensional chip, so as to at least solve the problem of poor heat dissipation capability of the TSV adapter board in the prior art.

[0004] In order to achieve the objective, according to one aspect of the present application, a TSV adapter board is provided, comprising: a substrate, the interior of the substrate having a chamber and a first structural layer covering a portion of the inner wall of the chamber, wherein the material type of the first structural layer is different from the material type of the substrate; a through-hole structure, which passes through the substrate and is located on one side of the chamber; and liquid metal, which is located in the chamber, and the liquid metal and the first structural layer include the same material elements.

[0005] Optionally, the TSV adapter plate further includes: a first groove penetrating a portion of the surface of the substrate and a portion of the surface of the first structural layer and communicating with the chamber; and a second structural layer located in the first groove.

[0006] Optionally, the substrate includes: a first sub-substrate; a second groove extending from the surface of the first sub-substrate into the first sub-substrate; a first sub-structure layer located at the bottom of the second groove; a second sub-substrate, the surface of the second sub-substrate being bonded to the surface of the first sub-substrate; a third groove extending from the surface of the second sub-substrate into the second sub-substrate, the second groove corresponding to the third groove, constituting the chamber; a second sub-structure layer located at the bottom of the third groove, the first sub-structure layer and the second sub-structure layer constituting the first structure layer.

[0007] Optionally, the through-hole structure includes: a through-hole penetrating the substrate and located on one side of the chamber; an insulating layer covering the hole wall of the through-hole; a barrier layer located on the surface of the insulating layer away from the hole wall of the through-hole; and a conductive layer located on the surface of the barrier layer away from the insulating layer.

[0008] Optionally, the TSV adapter plate further includes: a first metal connection structure located on the surface of the substrate, the first metal connection structure being in contact with the through-hole structure; and a second metal connection structure located on a surface of the first metal connection structure away from the substrate.

[0009] Optionally, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium.

[0010] Optionally, the liquid metal further includes at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boron nitride.

[0011] According to another aspect of the present application, a method for manufacturing the TSV adapter board is provided, comprising: providing a substrate, the interior of the substrate having a chamber and a first structural layer covering a portion of the inner wall of the chamber, wherein the material type of the first structural layer is different from the material type of the substrate; forming a through-hole structure penetrating the substrate on one side of the chamber; injecting liquid metal into the chamber to obtain the TSV adapter board, the liquid metal and the first structural layer comprising the same material elements.

[0012] Optionally, liquid metal is injected into the chamber to obtain the TSV adapter plate, including: forming a first groove that sequentially penetrates the substrate and the first structural layer to the chamber; injecting the liquid metal into the chamber through the first groove; filling the second structural layer in the first groove, and solidifying the second structural layer.

[0013] Optionally, injecting the liquid metal into the chamber through the first groove includes: placing the substrate formed with the first groove on a heating platform, the temperature of the heating platform is greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; during the injection of the liquid metal, collecting image information of the chamber; and adjusting the local temperature of the heating platform during the injection process according to the image information to eliminate some bubbles in the liquid metal material.

[0014] Optionally, the heating platform is located in a perfusion chamber, the heating platform includes a plurality of heating arrays, the perfusion chamber also includes a perfusion structure filled with the liquid metal, an image acquisition device and a light source, the perfusion structure is located above the heating platform, the light source is located on the side of the heating platform, the image acquisition device is located on a side of the perfusion structure away from the heating platform, and / or the image acquisition device is located on a side of the heating platform away from the light source, and the liquid metal is injected into the chamber through the first groove in a protective gas atmosphere, comprising: introducing nitrogen into the perfusion chamber; opening the perfusion structure in the nitrogen atmosphere to The liquid metal is injected into the chamber through the first groove, and during the injection of the liquid metal, image information of the chamber is collected, including: during the injection of the liquid metal, the light source is turned on; the image information of the chamber is collected by the image acquisition device and sent to a display so that the display displays the image information; according to the image information, the local temperature of the heating platform during the injection process is adjusted, including: according to the image information, determining whether there are bubbles larger than a preset diameter; in the case of bubbles larger than the preset diameter, adjusting the corresponding heating temperature of the heating array according to the position of the bubbles.

[0015] Optionally, a substrate is provided, including: providing a first sub-substrate and removing a portion of the first sub-substrate to form a second groove extending from the surface of the first sub-substrate into the first sub-substrate; forming a first sub-structure layer at the bottom of the second groove; providing a second sub-substrate and removing a portion of the second sub-substrate to form a third groove extending from the surface of the second sub-substrate into the second sub-substrate; forming a second sub-structure layer at the bottom of the third groove, the first sub-structure layer and the second sub-structure layer constituting the first structure layer; using the surface of the first sub-substrate and the surface of the second sub-substrate as a bonding interface, bonding the first sub-substrate formed with the first sub-structure layer and the second sub-substrate formed with the second sub-structure layer to obtain the substrate, the second groove and the third groove constituting the chamber.

[0016] Optionally, a through-hole structure penetrating the substrate is formed on one side of the chamber, including: removing part of the substrate to form a fourth initial groove extending from the first surface of the substrate into the substrate; sequentially forming an insulating layer, a barrier layer and a conductive layer on the sidewall of the fourth initial groove to obtain a fourth groove; grinding the substrate along the second surface of the substrate until the fourth groove is penetrated to obtain the through-hole structure, wherein the first surface and the second surface are two opposite surfaces of the substrate.

[0017] Optionally, after obtaining the through-hole structure, the method further includes: performing rewiring on the first surface and the second surface to obtain a first metal connection structure in contact with the through-hole structure; and forming a second metal connection structure on a surface of the first metal connection structure away from the substrate.

[0018] According to another aspect of the present application, a three-dimensional chip is provided, comprising: any one of the TSV adapter boards, or a TSV adapter board obtained by using any one of the TSV adapter board manufacturing methods.

[0019] Applying the technical solution of the present application, in the TSV adapter board, the through-hole structure penetrates the substrate, the chamber is located inside the substrate and on one side of the through-hole structure, the first structural layer covers part of the inner wall of the chamber, and the liquid metal is located in the chamber. The present application forms liquid metal in the chamber inside the TSV adapter board, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter board, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter board in the prior art. In addition, the fully connected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflux of the liquid metal. In addition, the material type of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material element. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter board. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0021] Figure 1 A schematic structural diagram of a TSV adapter board provided in an embodiment of the present application is shown;

[0022] Figure 2A schematic diagram of a process of manufacturing a TSV adapter board provided according to an embodiment of the present application is shown;

[0023] Figures 3 to 11 A schematic diagram of the structure obtained after each process step of the method for manufacturing a TSV adapter board provided in an embodiment of the present application is shown;

[0024] Fig.12 A schematic structural diagram of a perfusion chamber provided according to an embodiment of the present application is shown;

[0025] Fig.13 A schematic structural diagram of another TSV adapter board provided according to an embodiment of the present application is shown;

[0026] Fig.14 An exploded view of a single-band radio frequency T / R sub-array TSV adapter board provided according to an embodiment of the present application is shown;

[0027] FIG. 15( a ) shows a schematic diagram of a parallel TSV array structure of a single CPU computing unit provided according to an embodiment of the present application;

[0028] FIG. 15( b ) shows a comparison diagram of signal loss between TSV pillars of a single CPU computing unit, for water, silicon, and gallium according to an embodiment of the present application;

[0029] FIG. 15( c ) shows a schematic diagram of a quasi-coaxial TSV array structure of a single-band RF T / R subarray provided according to an embodiment of the present application.

[0030] FIG. 15( d ) shows a comparison diagram of signal loss between TSV pillars of a single-band RF T / R subarray according to an embodiment of the present application, among water, silicon, and gallium;

[0031] Fig.16 (a) shows a simulation diagram of the cumulative stress of a TSV adapter board of a single CPU computing unit provided in accordance with an embodiment of the present application;

[0032] Fig.16 (b) shows a simulation diagram of the cumulative stress of the single-band RF T / R sub-array TSV adapter plate working condition provided according to an embodiment of the present application;

[0033] Fig.17 (a) shows a single particle simulation diagram of a 200 μm silicon substrate / 100 μm embedded gallium silicon substrate / 100 μm gallium-based alloy silicon substrate / 3.8 mm molybdenum copper cover plate under 6 MeV proton irradiation according to an embodiment of the present application;

[0034] Fig.17(b) shows a total dose simulation diagram of a 200 μm silicon substrate / embedded 100 μm gallium silicon substrate / 100 μm gallium-based alloy silicon substrate / 3.8 mm molybdenum copper cover plate under irradiation with 100 6 MeV gamma particles according to an embodiment of the present application;

[0035] FIG. 18( a ) shows a three-dimensional temperature distribution diagram of a local area of ​​a single CPU embedded liquid metal TSV adapter plate provided according to an embodiment of the present application;

[0036] FIG18( b ) shows a three-dimensional temperature distribution diagram of a local area of ​​a single-band RF T / R sub-array TSV adapter board provided according to an embodiment of the present application.

[0037] The drawings include the following reference numerals:

[0038] 10. Substrate; 11. Chamber; 12. First structural layer; 13. Through-hole structure; 14. Liquid metal; 15. First groove; 16. Second structural layer; 17. First sub-substrate; 18. Second groove; 19. First sub-structure layer; 20. Second sub-substrate; 21. Third groove; 22. Second sub-structure layer; 23. Through-hole; 24. Insulating layer; 25. Barrier layer; 26. Conductive layer; 27. First metal connection structure; 28. Initial substrate; 29. ​​Fourth groove; 30. Heating platform; 31. Perfusion chamber; 32. Perfusion structure; 33. Image acquisition device; 34. Light source; 35. Glove hole; 36. Inlet and outlet balloon valve; 37. Second metal connection structure. DETAILED DESCRIPTION

[0039] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0040] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0041] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0042] As introduced in the background technology, the heat dissipation capability of the TSV adapter board in the prior art is relatively poor. To solve the above technical problems, the embodiments of the present application provide a TSV adapter board, a manufacturing method thereof, and a three-dimensional chip.

[0043] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0044] According to one aspect of the present application, a TSV adapter board is provided, such as Figure 1 As shown, the TSV adapter board includes:

[0045] A substrate 10, wherein the interior of the substrate 10 has a chamber 11 and a first structural layer 12 covering a portion of the inner wall of the chamber 11, wherein the material type of the first structural layer 12 is different from the material type of the substrate 10;

[0046] A through hole structure 13, penetrating the substrate 10 and located at one side of the chamber 11;

[0047] The liquid metal 14 is located in the chamber 11 , and the liquid metal and the first structural layer include the same material elements.

[0048] In the above-mentioned TSV adapter board, the above-mentioned through-hole structure passes through the substrate, the above-mentioned chamber is located inside the above-mentioned substrate and on one side of the above-mentioned through-hole structure, the first structural layer covers part of the inner wall of the chamber, and the liquid metal is located in the chamber. The present application forms liquid metal in the chamber inside the TSV adapter board, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter board, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter board in the prior art. In addition, the fully connected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflux of the liquid metal. In addition, the material type of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter board.

[0049] Specifically, the liquid metal may be any suitable low-melting-point, amorphous metal material, such as gallium, rubidium, and cesium, or an alloy including the metal material; the first structural layer may be a metal compound including the metal material, and those skilled in the art may flexibly set the materials of the liquid metal and the first structural layer according to actual needs.

[0050] In an optional embodiment, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium. Gallium-based liquid metal has excellent properties such as good fluidity, low loss and high thermal conductivity, which can further improve the heat dissipation performance of the TSV adapter board, thereby further enhancing the overall structural strength and signal transmission stability of the TSV adapter board.

[0051] In the actual application process, the above-mentioned substrate can be selected according to the actual needs of the device, and may include a silicon substrate, a germanium substrate, a silicon germanium substrate, a SOI (Silicon On Insulator) substrate, or a GOI (Germaniun On Insulator) substrate. In other embodiments, the above-mentioned substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP, or SiC, etc., and may also be a stacked structure, such as Si / SiGe, etc., and may also be other epitaxial structures, such as SGOI (Silicon Germanium On Insulator), etc. Of course, it may also be other substrates feasible in the prior art.

[0052] Furthermore, the substrate is a silicon substrate, the first structural layer is a gallium nitride layer or a gallium arsenide layer, and the liquid metal is liquid gallium. Liquid gallium has excellent temperature uniformity performance, and the metal thermal sliding speed of liquid gallium can be enhanced by the gallium nitride layer or the gallium arsenide layer, which can enhance the radial passive heat dissipation capability of the TSV adapter board without affecting the relevant standard processes of the TSV adapter board.

[0053] Specifically, Figure 1 The TSV adapter plate further includes: a first groove 15, which penetrates a portion of the surface of the substrate 10 and a portion of the surface of the first structural layer 12, and is connected to the chamber 11; and a second structural layer 16, which is located in the first groove 15. The chamber is connected through the first groove, so that the liquid metal is poured into the chamber, and the chamber filled with the liquid metal is sealed by the second structural layer.

[0054] More specifically, the second structural layer may be a high temperature ceramic adhesive, through which a firm connection with the substrate can be achieved, thereby further achieving a firm sealing of the liquid metal in the chamber.

[0055] In order to further solve the problem of poor heat dissipation of the TSV adapter board and further improve the structural strength of the TSV adapter board, according to another exemplary embodiment, the above-mentioned substrate includes: a first sub-substrate; a second groove extending from the surface of the above-mentioned first sub-substrate into the above-mentioned first sub-substrate; a first sub-structure layer located at the bottom of the above-mentioned second groove; a second sub-substrate, the surface of the above-mentioned second sub-substrate is bonded to the surface of the above-mentioned first sub-substrate; a third groove extending from the surface of the above-mentioned second sub-substrate into the above-mentioned second sub-substrate, the above-mentioned second groove corresponds to the above-mentioned third groove, and constitutes the above-mentioned chamber; a second sub-structure layer located at the bottom of the above-mentioned third groove, and the above-mentioned first sub-structure layer and the above-mentioned second sub-structure layer constitute the above-mentioned first structure layer. In this embodiment, a substrate with a chamber inside is obtained by bonding a first sub-substrate having a second groove and a second sub-substrate having a third groove, thereby ensuring that the obtained substrate has uniform thermal distribution, good seismic resistance, and high connection strength, thereby further ensuring that the TSV adapter board has strong compressive stress resistance, so that the TSV adapter board can withstand relatively harsh working environments and has high process compatibility; and, the first sub-structure layer and the second sub-structure layer respectively cover the bottom of the second groove and the third groove, further ensuring that the liquid metal has good flow properties on the first sub-structure layer and the second sub-structure layer, and a fast thermal sliding speed, so that the liquid metal has a better temperature uniformity effect, further improving the heat dissipation capacity of the entire TSV.

[0056] Alternatively, if Figure 1As shown, the through hole structure 13 includes: a through hole 23, which penetrates the substrate 10 and is located at one side of the chamber 11; an insulating layer 24, which covers the hole wall of the through hole 23; a barrier layer 25, which is located on the surface of the insulating layer 24 away from the hole wall of the through hole 23; and a conductive layer 26, which is located on the surface of the barrier layer 25 away from the insulating layer 24. Due to the conductivity of the substrate, it is necessary to form the above insulating layer for electrical insulation between the substrate and the conductive layer. In order to prevent the conductive particles in the conductive layer from diffusing into the insulating layer and affecting the electrical characteristics of the insulating layer, a barrier layer is provided between the insulating layer and the conductive layer to prevent the diffusion of the conductive particles and improve the adhesion strength of the conductive layer.

[0057] In actual application, the material of the insulating layer is generally silicon oxide, which is used to isolate signals, because it is easy to make in silicon vias and compatible with IC processes; the material of the barrier layer can be polysilicon, and the material of the conductive layer can be metal materials, such as copper pillars, etc., to transmit signals. Of course, the materials of the insulating layer, the barrier layer and the conductive layer are not limited to the above materials, and those skilled in the art can select any suitable material as the insulating layer, barrier layer and conductive layer. The insulating layer, barrier layer and conductive layer are not limited to single-layer structures, and can also be a composite layer structure including multiple layers.

[0058] It should be noted that the through hole covering the insulating layer, the barrier layer and the conductive layer still has a through hole.

[0059] In some further exemplary embodiments, Figure 1 As shown, the TSV adapter plate further includes: a first metal connection structure 27, located on the surface of the substrate 10, the first metal connection structure 27 is in contact with the through-hole structure 13; a second metal connection structure 37, located on the surface of the first metal connection structure 27 away from the substrate 10. The first metal connection structure and the second metal connection structure are used to meet the requirements of subsequent connection and packaging of the TSV adapter plate.

[0060] In actual application, those skilled in the art can select any suitable metal material as the material of the first metal connection structure and the second metal connection structure. The materials of the first metal connection structure and the second metal connection structure can be the same or different, and this application does not specifically limit this. In an optional solution, the material of the first metal connection structure is copper, and the material of the second metal connection structure is gold.

[0061] According to some other embodiments, there are multiple through-hole structures, and the multiple through-hole structures can be evenly spaced or unevenly spaced; the multiple through-hole structures can be set on the same side of the chamber or on both sides of the chamber. The multiple arranged through-hole structures and the fully connected domain cavity naturally form a planar heat pipe micro-pin fin array wick structure, which creates a more favorable spatial environment for the adaptive heat return of gallium-based liquid metal, and can further enhance the radial passive heat dissipation capability of the TSV adapter board without affecting the existing functions of the TSV adapter board.

[0062] In order to further improve the heat dissipation capability of the entire TSV adapter board, in other embodiments, there may be a plurality of the above-mentioned chambers, and the plurality of the above-mentioned chambers are distributed in the above-mentioned substrate at intervals.

[0063] In the present application, in addition to gallium, the liquid metal also includes at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boronized nitrogen. When the liquid metal also includes indium and / or silver, indium and / or silver can increase the overall cooling performance and electromagnetic shielding capability of the TSV adapter board; when the liquid metal also includes lead, the radiation resistance of the entire TSV adapter board can be further improved by evenly distributing large mass atoms such as lead in the chamber.

[0064] Of course, the liquid metal is not limited to the above materials, and may also include other components that can enhance the heat dissipation capability. In addition, when the liquid metal includes lead, the mass fraction of the lead may be 5%.

[0065] In the present embodiment, one is provided, and although a logical order is shown in the flow chart, in some cases, the steps shown or described may be performed in an order different from that shown here.

[0066] Figure 2 FIG. 1 is a flow chart of a method for manufacturing the TSV adapter board according to an embodiment of the present application. Figure 2 As shown, the method comprises the following steps:

[0067] Step S201, providing Figure 6 The substrate 10 shown in the figure has a chamber 11 inside and a first structural layer 12 covering a part of the inner wall of the chamber 11, wherein the material type of the first structural layer 12 is different from the material type of the substrate 10;

[0068] Specifically, the substrate can be selected according to the actual needs of the device, and may include a silicon substrate, a germanium substrate, a silicon germanium substrate, an SOI substrate, or a GOI substrate. In other embodiments, the substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP, or SiC, etc., may also be a stacked structure, such as Si / SiGe, etc., may also be other epitaxial structures, such as SGOI, etc. Of course, it may also be other substrates feasible in the prior art.

[0069] Step S202, forming a through hole structure 13 penetrating the substrate on one side of the chamber 11, and obtaining Figure 7 The structure shown;

[0070] Step S203, injecting liquid metal 14 into the chamber 11 to obtain Figure 1 In the TSV adapter plate shown above, the liquid metal and the first structural layer include the same material elements.

[0071] Specifically, the liquid metal may be any suitable low-melting-point, amorphous metal material, such as gallium, rubidium, and cesium, or an alloy including the metal material; the first structural layer may be a metal compound including the metal material, and those skilled in the art may flexibly set the materials of the liquid metal and the first structural layer according to actual needs.

[0072] Through the above embodiments, a substrate is first provided, wherein the substrate has a chamber and a first structural layer covering part of the inner wall of the chamber; then a through-hole structure penetrating the substrate is formed on one side of the chamber; finally, liquid metal is injected into the chamber to obtain a TSV adapter board. The present application forms liquid metal in the chamber inside the TSV adapter board, and utilizes the high thermal conductivity of the liquid metal to improve the heat dissipation performance of the TSV adapter board, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter board in the prior art. Moreover, the fully interconnected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflux of the liquid metal. In addition, the material types of the first structural layer and the substrate are different, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter board.

[0073] Specifically, the material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium. Gallium-based liquid metal has excellent properties such as good fluidity, low loss and high thermal conductivity, which can further improve the heat dissipation performance of the TSV adapter board, thereby further enhancing the overall structural strength and signal transmission stability of the TSV adapter board.

[0074] Furthermore, the substrate is a silicon substrate, the first structural layer is a gallium nitride layer or a gallium arsenide layer, and the liquid metal is liquid gallium. Liquid gallium has excellent temperature uniformity performance, and the metal thermal sliding speed of liquid gallium can be enhanced by the gallium nitride layer or the gallium arsenide layer, which can enhance the radial passive heat dissipation capability of the TSV adapter board without affecting the relevant standard processes of the TSV adapter board.

[0075] According to another specific embodiment of the present application, providing a substrate includes: providing a first sub-substrate 17, and removing part of the first sub-substrate 17, such as Figure 3 As shown, a second groove 18 is formed extending from the surface of the first sub-substrate 17 into the first sub-substrate 17; Figure 4 As shown, a first substructure layer 19 is formed at the bottom of the second trench 18; a second sub-substrate 20 is provided, and a portion of the second sub-substrate 20 is removed, as shown in FIG. Figure 3 As shown, a third groove 21 extending from the surface of the second sub-substrate 20 into the second sub-substrate 20 is formed; as shown Figure 4 As shown, a second substructure layer 22 is formed at the bottom of the third groove 21, and the first substructure layer 19 and the second substructure layer 22 constitute the first structure layer 12; the surface of the first sub-substrate 17 and the surface of the second sub-substrate 20 are used as bonding interfaces, and the first sub-substrate 17 formed with the first substructure layer 19 and the second sub-substrate 20 formed with the second substructure layer 22 are bonded to obtain the following Figure 6 The substrate 10 shown above, Figure 4 The second groove 18 and the third groove 21 constitute Figure 6 The above-mentioned chamber 11. In this embodiment, by bonding the first sub-substrate with the second groove and the second sub-substrate with the third groove, a substrate with a chamber inside is obtained, which ensures that the obtained substrate has uniform thermal distribution, good shock resistance and high connection strength, thereby further ensuring that the TSV adapter board has strong compressive stress, so that the TSV adapter board can withstand a relatively harsh working environment and has high process compatibility; and the first sub-structure layer and the second sub-structure layer respectively cover the bottom of the second groove and the third groove, further ensuring that the liquid metal has good flow performance on the first sub-structure layer and the second sub-structure layer, and the thermal sliding speed is fast, so that the uniform temperature effect of the liquid metal is better, and the heat dissipation capacity of the entire TSV is further improved.

[0076] Wherein, removing a portion of the first sub-substrate to form a second groove extending from the surface of the first sub-substrate into the first sub-substrate comprises: using an ion etcher to perform deep reactive ion etching on the first sub-substrate to form the second groove. Removing a portion of the second sub-substrate to form a third groove extending from the surface of the second sub-substrate into the second sub-substrate comprises: using an ion etcher to perform deep reactive ion etching on the second sub-substrate to form the third groove.

[0077] The first substructure layer is formed at the bottom of the second groove, comprising: forming a first preliminary structure layer on the exposed surface of the first sub-substrate formed with the second groove by using a metal organic vapor phase epitaxy process; etching the first preliminary structure layer formed by using a wet etcher, retaining only the first preliminary structure layer at the bottom of the second groove, and obtaining the first substructure layer. The first substructure layer is formed at the bottom of the second groove, comprising: forming a second preliminary structure layer on the exposed surface of the second sub-substrate formed with the third groove by using a metal organic vapor phase epitaxy process; etching the second preliminary structure layer formed by using a wet etcher, retaining only the second preliminary structure layer at the bottom of the third groove, and obtaining the second substructure layer.

[0078] In the process of generating the first preliminary structure layer and the second preliminary structure layer by metal organic vapor phase epitaxy process, a silicon wafer is placed in a reaction chamber, and trimethylgallium and ammonia NH3 are simultaneously introduced into the reaction chamber to react, and the reaction chemical formula is:

[0079] Ga(CH3)3+NH3→GaN+3CH4

[0080] Because GaN has a large tensile stress on the silicon surface, cracks and roughness will occur on the GaN on the silicon substrate. In order to grow high-quality GaN epitaxially, a layer of HT-AlN with good thermal stability can be added to the silicon substrate as a buffer layer to convert the tensile stress of GaN into compressive stress, which can greatly improve the growth quality of the GaN epitaxial layer. However, in order to increase the surface tension difference, the roughness of the GaN-Si heterointerface needs to be increased. Therefore, the quality requirements for GaN in the manufacturing process of this application are much lower than those for epitaxial GaN as a semiconductor device substrate, so a 100nm GaN epitaxial process can be directly grown on a silicon substrate to obtain a nanostructured heterointerface that meets a certain range of roughness requirements.

[0081] The specific process of etching the above-mentioned first preliminary structure layer and the above-mentioned second preliminary structure layer by a wet etcher is to immerse the first sub-substrate formed with the above-mentioned first preliminary structure layer and the second sub-substrate formed with the above-mentioned second preliminary structure layer in a KOH solution, and etch the epitaxial gallium nitride layer with a thickness of 100nm through an electrochemical reaction to form the desired graphical heterogeneous interface.

[0082] In addition, the first sub-substrate 17 and the second sub-substrate 20 are bonded to form the first sub-structure layer 19 and the second sub-substrate 20, respectively. Figure 6 The above-mentioned substrate 10, the above-mentioned second groove 18 and the above-mentioned third groove 21 constitute the above-mentioned chamber, including: using the surface of the above-mentioned first sub-substrate 17 and the surface of the above-mentioned second sub-substrate 20 as the bonding interface, bonding the above-mentioned first sub-substrate 17 formed with the above-mentioned first sub-structure layer 19 and the above-mentioned second sub-substrate 20 formed with the above-mentioned second sub-structure layer 22 to obtain Figure 5 The initial substrate 28 shown in the figure is subjected to chemical mechanical polishing treatment on the surface of the initial substrate, so that the thickness of the initial substrate after grinding reaches a preset thickness, such as 60 μm. Of course, the thickness of the substrate is not limited to the above 60 μm, and this value can be determined according to the actual process.

[0083] In practical applications, the depth of the cavity covered with the first structural layer may be 100 μm, or any other appropriate value.

[0084] Optionally, forming a through hole structure penetrating the substrate on one side of the chamber includes: removing a portion of the substrate to form a fourth initial trench extending from the first surface of the substrate into the substrate; sequentially forming an insulating layer, a barrier layer and a conductive layer on the sidewall of the fourth initial trench to obtain Figure 7 The fourth groove 29 shown in FIG. 1 is formed by grinding the substrate 10 along the second surface of the substrate 10 until the fourth groove 29 is penetrated to obtain a Figure 8 In the through hole structure 13 shown, the first surface and the second surface are two opposite surfaces of the substrate 10 .

[0085] Specifically, the thickness of the substrate after the through-hole structure is formed may be 150 μm, and those skilled in the art may flexibly set the thickness of the substrate after grinding according to actual process requirements.

[0086] According to another optional embodiment of the present application, after obtaining the above-mentioned through-hole structure, the above-mentioned method further includes: Figure 8 and Fig. 9As shown, rewiring is performed on the first surface and the second surface to obtain a first metal connection structure 27 in contact with the through-hole structure 13; a second metal connection structure 37 is formed on the surface of the first metal connection structure 27 away from the substrate 10. The first metal connection structure and the second metal connection structure are used to meet the requirements of subsequent connection and packaging of the TSV adapter board.

[0087] In actual application, those skilled in the art can select any suitable metal material as the material of the first metal connection structure and the second metal connection structure. The materials of the first metal connection structure and the second metal connection structure can be the same or different, and this application does not specifically limit this. In an optional solution, the material of the first metal connection structure is copper, and the material of the second metal connection structure is gold.

[0088] Furthermore, a magnetron sputtering machine may be used to perform rewiring on the first surface and the second surface.

[0089] In another optional solution, liquid metal is injected into the above chamber to obtain the above TSV adapter plate, including: Fig.10 As shown, a first groove 15 is formed that sequentially penetrates the substrate 10 and the first structure layer 12 to the chamber 11; Fig.11 As shown, the liquid metal 14 is injected into the chamber 11 through the first groove 15; Figure 1 As shown, the second structural layer 16 is filled in the first groove 15 and solidified. By forming a first groove communicating with the cavity, the liquid metal is poured into the cavity, and the cavity filled with the liquid metal is sealed by the second structural layer.

[0090] Specifically, curing the second structural layer includes: placing the structure formed with the second structural layer in a high-temperature oven, and setting the temperature of the high-temperature oven to a preset temperature to cure the second structural layer. Forming a first groove that sequentially penetrates the substrate and the first structural layer to the chamber includes: using an ion etcher to perform deep reactive ion etching on the substrate to obtain the first groove.

[0091] In specific applications, technicians in this field can select the value of the preset temperature according to the material of the second structural layer. For example, when the second structural layer is a high-temperature ceramic adhesive, the preset temperature can be 200°C, which allows the ceramic adhesive to fully solidify and ensure stable connection and packaging effects.

[0092] The process step of forming the first metal connection structure may be performed after injecting liquid metal into the chamber, or may be performed after obtaining the through-hole structure and before injecting liquid metal into the chamber. In the case where the first metal connection structure is formed before injecting liquid metal into the chamber, forming the first groove 15 sequentially penetrating the substrate 10 and the first structure layer 12 to the chamber 11 includes: Fig. 9 and Fig.10 As shown, an ion etcher is used to sequentially etch and remove a portion of the first metal connection structure 27 , a portion of the substrate 10 , and a portion of the first structure layer 12 using a deep reactive ion etching process to form the first trench 15 .

[0093] In an embodiment of the present application, the liquid metal is injected into the chamber through the first groove, comprising: placing the substrate formed with the first groove on a heating platform, the temperature of the heating platform being greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; collecting image information of the chamber during the injection of the liquid metal; adjusting the local temperature of the heating platform during the injection process according to the image information to eliminate some bubbles in the liquid metal material. In this embodiment, the liquid metal is injected strongly into the chamber in a protective gas atmosphere, thereby avoiding the problem of liquid metal contacting with air and causing oxidation and denaturation of the liquid metal. In addition, by collecting image information of the chamber during the injection of the liquid metal, the local temperature of the heating platform of the heating chamber is adjusted according to the image information, thereby eliminating the problem of protective gas bubble clogging during the injection process and ensuring high injection quality.

[0094] Specifically, Fig.12 As shown, the heating platform 30 is located in a perfusion chamber 31, the heating platform 30 includes a plurality of heating arrays, the perfusion chamber 31 also includes a perfusion structure 32 filled with the liquid metal, an image acquisition device 33 and a light source 34, the perfusion structure 32 is located above the heating platform 30, the light source 34 is located on the side of the heating platform 30, the image acquisition device 33 is located on a side of the perfusion structure 32 away from the heating platform 30, and / or the image acquisition device 33 is located on a side of the heating platform 30 away from the light source 34.

[0095] On this basis, the liquid metal is injected into the chamber through the first groove in a protective gas atmosphere, including: nitrogen is introduced into the injection chamber 31; the injection structure 32 is opened in the nitrogen atmosphere to inject the liquid metal into the chamber through the first groove; during the injection of the liquid metal, the image information of the chamber is collected, including: during the injection of the liquid metal, the light source 34 is turned on; the image information of the chamber is collected by the image acquisition device 33 and sent to the display so that the display displays the image information; according to the image information, the local temperature of the heating platform during the injection process is adjusted, including: according to the image information, whether there are bubbles larger than the preset diameter; in the case of bubbles larger than the preset diameter, the heating temperature of the corresponding heating array is adjusted according to the position of the bubble. According to the position of the bubble, the heating temperature of the corresponding heating array is adjusted, including: according to the position of the bubble, the input voltage is determined, and the input voltage of the corresponding heating array is adjusted to adjust its heating temperature.

[0096] The method further includes: determining whether the volume of the liquid metal in the chamber is greater than or equal to a predetermined volume based on the image information; and controlling the perfusion structure to stop perfusion when it is determined that the volume of the liquid metal in the chamber is greater than or equal to the predetermined volume.

[0097] Specifically, those skilled in the art can flexibly set the specific value of the predetermined volume according to actual needs, such as setting the predetermined volume to 90% of the total volume of the chamber. The predetermined volume can be converted into the corresponding chamber height by determining the volume of the liquid metal in the chamber according to the image information; and whether the volume reaches the predetermined volume can be determined according to the actual height of the chamber.

[0098] Due to the irregular and non-uniform arrangement of the TSV array, when the liquid metal is poured into the chamber of the TSV adapter board, the optimal wetting path with the minimum flow resistance will inevitably appear, resulting in a large number of nitrogen bubbles being blocked in the chamber and unable to be discharged in time. Therefore, during the pouring process, the Marangoni effect is used to adjust the input voltage of some heating arrays of the heating platform to form a controllable temperature gradient change in the chamber, change the distribution of the super-wetting thermal slip area of ​​the heterogeneous interface in the chamber in real time, and optimize the wetting path of the liquid metal in the chamber.

[0099] In a specific embodiment, Fig.12As shown, there are two image acquisition devices. One of the image acquisition devices 33 is located on the side of the perfusion structure 32 away from the heating platform 30, which is an infrared microscope camera. It uses the light transmittance of the infrared band of the substrate silicon material to obtain the chamber image and detect the filling effect of the liquid metal, the flow state of the liquid metal in the chamber and the regional temperature change of the liquid metal in real time; the other image acquisition device 33 is located on the side of the heating platform 30 away from the light source 34, which is a high-speed camera. The perfusion chamber 31 can be a nitrogen glove box made of acrylic material, with an external length, width and height of 1200mm, 800mm and 700mm respectively. There is a glove hole 35 on each side of the box body, and one side of the box body is provided with an inlet and outlet ball valve 36 for nitrogen replacement. The length and width of the heating platform are 120mm and 150mm respectively. The three-axis displacement stroke of the heating platform is 60mm front and back, 35mm left and right, and the upper and lower 80mm accuracy is 0.1m. The perfusion structure is a syringe with a needle. The light source is a dense LED adjustable blue tone industrial-grade cold light source, which can provide lighting from a horizontal direction.

[0100] According to some other embodiments, Fig.13 As shown, the substrate 10 has a plurality of chambers 11 arranged at intervals, and step S202: forming a through-hole structure penetrating the substrate on one side of the chamber, including: forming a through-hole structure 13 on one side of each chamber, and the through-hole structure and the chamber are alternately arranged at intervals. After the second structural layer 16 is filled in the first groove 15, subsequent processing steps such as cutting, packaging, etc. can be performed to complete the final product manufacturing. These processing steps can be performed according to specific needs to obtain a functional and reliable embedded liquid metal TSV product. In this product, the thickness of the TSV adapter plate is 200μm, the outer wall of the adapter plate is composed of silicon, and a 100nm thick nanostructured gallium nitride heterogeneous interface is epitaxially formed on the upper and lower surfaces of the chamber. In addition to the gallium nitride heterogeneous interface, the height of the chamber is 100μm for filling liquid gallium-based liquid metal. In the TSV adapter plate, the through-hole structure is an embedded cylindrical shape.

[0101] The TSV adapter board of the present application can be applied to a transceiver. Fig.14An exploded view of a single-band RF T / R (transmitter / Receiver) subarray TSV adapter board is shown as an example. There are two RF PA (Power Amplifier) ​​chips on the top, and the bottom of the internal liquid metal flow area is a square with a side length of 12.5 mm, and the chamber height is 100 μm. There are regular hexagonal ground wires around the internal TSV signal transmission area. The layout of the regular hexagonal ground wires helps to keep the minimum distance between the ground wires equal, thereby minimizing the inductance and resistance of the circuit. This coaxial TSV array structure can provide good shielding effect, reduce mutual interference with surrounding signals, and help ensure stable signal transmission and reduce interference.

[0102] In this application, the heat dissipation model of the TSV adapter board of this application can be constructed by combining the relevant parameters of the gallium-based liquid metal on the heterogeneous interface obtained by the cross-scale thermal slip simulation of the super-wetting of the liquid metal nanostructure heterogeneous interface, such as dynamic viscosity, sliding force, etc. The obtained simulation results are shown in Figure 18. As shown in Figure 18 (a), under the natural convection conditions of the CPU power of 6W and the ambient temperature of 20°C, the maximum temperature of the TSV adapter board is 56°C, which is lower than the maximum temperature of the standard TSV adapter board in the prior art, and the temperature difference between the two is 36.2°C.

[0103] The TSV adapter board of the present application is applied to the RF T / R subframe. Since the TSV array density in the RF T / R subarray TSV adapter board is low, the gallium-based liquid metal cannot be isolated by the TSV array, forming many local adaptive heat return paths. As shown in Figure 18(b), under the natural convection conditions of RF PA chip power of 6W and ambient temperature of 20°C, the maximum temperature of the embedded liquid metal RF T / R subarray TSV adapter board is 68°C, which is also 31°C lower than the maximum temperature of the standard RF T / R subarray TSV adapter board. In summary, the TSV adapter board of the present application has excellent uniform temperature performance. The thermal glide velocity of the gallium-based liquid metal is enhanced by the epitaxial nanostructured gallium nitride layer, which can enhance the radial passive heat dissipation capability of the TSV adapter board without affecting the existing standard processes related to the adapter board.

[0104] Table 1 TSV array high frequency signal column loss simulation parameter setting table

[0105]

[0106]

[0107] For two typical TSV array structures (parallel array and quasi-coaxial array) in a single CPU computing unit and a single-band RF front-end T / R subarray, water, silicon, and gallium were used as filling materials between TSV arrays to simulate and optimize the high-frequency signal inter-column loss, as shown in Figure 15 (a), (b), (c), and (d). The simulation boundary conditions are set as shown in Table 1.

[0108] In the model, the chamber is filled with gallium-based liquid metal. Since the geometric morphology of the liquid medium changes little and has little effect on the electrical signal, the material inside the chamber is regarded as a complete heat dissipation medium in the simulation. From the simulation results, it can be seen that benefiting from the good signal shielding performance of gallium-based liquid metal, the high-frequency signal column loss of the two TSV adapters after being filled with gallium-based liquid metal is significantly better than that of the embedded water-cooled adapter, which is less than 0.5dB within 1-40GHz, and its broadband performance is also improved compared to silicon. The relevant formulas involved in the simulation are as follows:

[0109]

[0110] Formula (1) is the ABCD parameter matrix (also called transmission line parameters) of the TSV array, which is given by extracting the RLCG (resistance, inductance, capacitance and conductance) parameters, where Z0, θ and h TSV are the characteristic impedance, propagation constant and TSV height of the C-TSV array respectively. Based on this formula, the return loss (S21) of the structure can be obtained, which can be specifically seen in formula (2).

[0111]

[0112] In order to achieve a TSV adapter with high process compatibility, in addition to optimizing its heat dissipation and temperature uniformity performance and electrical signal shielding performance, the optimization of the cumulative stress of the adapter under working conditions is also an indispensable part. For the working conditions of the TSV adapter, stress simulation is performed on the TSV adapter. The source of stress is mainly due to the thermal strain caused by the change of temperature under working conditions. The specific formula is as follows:

[0113]

[0114] ε T =α(T2-T1)=αΔT(4)

[0115] In the formula, α is the thermal expansion coefficient of the material, L is the initial length of the object, ΔT is the change in length of the object at a certain temperature, and ε T is the strain of an object at a certain temperature. In this application, the main structural component of the adapter plate is silicon, so the parameter setting is based on the thermal expansion coefficient of silicon. The stress on the object is shown in the following formula:

[0116] σ=E×ε T (5)

[0117] Where σ is the stress on the object.

[0118] In order to fully verify the stress and strain of the TSV adapter board to be developed in this application under extreme working conditions, this application sets the external temperature conditions of repeated cycles from 250-450℃, and conducts comprehensive simulations on the accumulated stress and strain of the single CPU computing unit TSV adapter board and the single-band RF T / R subarray TSV adapter board. The final results are as follows Fig.16 As shown in (a) and (b), the maximum residual stress of the TSV adapter board for a single CPU computing unit is 0.49 GPa, and the maximum stress of the TSV adapter board for a single-band RF T / R subarray is 0.23 GPa, while the maximum compressive stress of silicon (3.5-4 GPa) is much higher than this. Therefore, the TSV adapter board of the present application is capable of withstanding relatively harsh working environments and has high process compatibility.

[0119] In space, the main components of cosmic rays are high-energy protons and some gamma rays. When high-energy protons are incident on semiconductor devices, the interaction mechanism between the incident protons and semiconductor materials is Bremsstrahlung, which is the interaction between the protons and the Coulomb field of the nucleus when the protons approach the nucleus. The direction of the proton's motion is deflected and decelerated sharply, and the energy is converted into radiation. The formula is as follows:

[0120]

[0121]

[0122] Among them, E is the electric field strength vector, q is the charge of the charged particle, r is the distance between the observation point and the charged particle, c is the speed of light in vacuum, ε0 is the dielectric constant of vacuum, a is the acceleration vector, and e r is the unit radial vector pointing from the charged particle to the space, v is the velocity of the charged particle, B is the magnetic induction intensity vector, S is the energy flux density vector, θ is the particle's forward direction and e r Angle.

[0123] The interaction mechanism between gamma rays and semiconductor materials is mainly the Compton effect. Gamma photons collide elastically with the outer electrons of atoms (which can be regarded as free electrons). Gamma photons only transfer part of their energy to the outer electrons of atoms, causing the electrons to break free from the constraints of the nucleus and be ejected from the atom. The photons themselves change their direction of movement. The emitted electrons are called Compton electrons, which can continue to interact with the medium. The Compton effect formula is as follows:

[0124]

[0125] Among them, Δλ is the difference between the incident wavelength λ0 and the scattered wavelength λ, h is Planck's constant, c is the speed of light, and m is the rest mass of the electron. is the scattering angle.

[0126] In addition to adding silver to adjust heat dissipation and electromagnetic shielding, a certain proportion of lead can also be added to the gallium-based alloy. The uniform distribution of large mass atoms such as silver and lead in the chamber can further improve the radiation resistance of the TSV adapter. 65 In 20.5 Sn 9.5 Pb5 silicon substrate and 3.8mm molybdenum copper cover plate were used for single particle simulation and total dose simulation respectively. Fig.17 (a) and (b) are shown in Tables 2 and 3. In the single particle simulation, under the irradiation of a single proton with an energy of 6MeV, the proton can penetrate the 200μm silicon plate, while the 100μm metal gallium, 100μm gallium-based alloy and 3.8mm molybdenum copper cover block the proton to prevent it from causing radiation damage to the internal devices. Under the irradiation of 10MeV protons, the 3.8mm molybdenum copper cover blocks the protons. Although the 100μm metal gallium and 100μm gallium-based alloy cannot completely block the protons, they effectively protect the materials behind them and reduce the energy deposition of the 50μm thick silicon layer on the back of the TSV adapter. In the total dose simulation, 100 gamma particles with an energy of 6MeV were set for irradiation. The simulation results show that energy deposition is generated in the embedded metal gallium or gallium-based alloy, accompanied by the generation of negative electrons and protons. Therefore, the embedded liquid metal TSV adapter in this design can provide enhanced radiation protection for the internal structure.

[0127] Table 2 High-energy proton single particle simulation energy deposition

[0128]

[0129] Table 3 γ-particle total dose simulation energy deposition

[0130]

[0131] According to another aspect of the present application, a three-dimensional chip is provided, comprising: any one of the above-mentioned TSV adapter boards, or a TSV adapter board obtained by using any one of the above-mentioned TSV adapter board manufacturing methods.

[0132] The above-mentioned three-dimensional chip includes any of the above-mentioned TSV adapter boards, or a TSV adapter board manufactured by any of the above-mentioned methods, in which the above-mentioned through-hole structure penetrates the substrate, the above-mentioned chamber is located inside the above-mentioned substrate and on one side of the above-mentioned through-hole structure, the first structural layer covers part of the inner wall of the chamber, and the liquid metal is located in the chamber. The present application forms liquid metal in the chamber inside the TSV adapter board, and the high thermal conductivity of the liquid metal can be used to improve the heat dissipation performance of the TSV adapter board, thereby alleviating the problem of poor heat dissipation capacity of the TSV adapter board in the prior art. In addition, the fully connected domain cavity of the through-hole structure located on one side of the chamber naturally forms a planar heat pipe micro-needle fin liquid absorption core structure, which provides a more favorable spatial environment for the adaptive heat reflux of the liquid metal. In addition, the first structural layer and the substrate are of different material types, and the first structural layer and the liquid metal have the same material elements. In this way, the first structural layer plays a heterogeneous transition role between the substrate and the liquid metal, so that the liquid metal has better fluidity in the chamber, thereby further ensuring a better overall cooling effect on the TSV adapter plate.

[0133] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0134] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A TSV adapter board, characterized in that: include: A substrate, wherein the interior of the substrate has a cavity and a first structural layer covering a portion of an inner wall of the cavity, wherein a material type of the first structural layer is different from a material type of the substrate; a through-hole structure, penetrating the substrate and located at one side of the chamber; Liquid metal is located in the chamber, and the liquid metal and the first structural layer include the same material element.

2. The TSV adapter board according to claim 1, characterized in that: The TSV adapter plate further includes: A first groove, penetrating a portion of the surface of the substrate and a portion of the surface of the first structural layer, and communicating with the chamber; The second structure layer is located in the first groove.

3. The TSV adapter board according to claim 1, characterized in that: The substrate comprises: a first sub-substrate; a second groove extending from the surface of the first sub-substrate into the first sub-substrate; A first substructure layer, located at the bottom of the second groove; a second sub-substrate, a surface of the second sub-substrate being bonded to a surface of the first sub-substrate; a third groove extending from the surface of the second sub-substrate into the second sub-substrate, the second groove corresponding to the third groove to form the chamber; The second substructure layer is located at the bottom of the third groove, and the first substructure layer and the second substructure layer constitute the first structure layer.

4. The TSV adapter board according to claim 1, characterized in that: The through-hole structure comprises: a through hole penetrating the substrate and located at one side of the chamber; An insulating layer covering the hole wall of the through hole; A barrier layer is located on a surface of the insulating layer away from a hole wall of the through hole; The conductive layer is located on a surface of the barrier layer away from the insulating layer.

5. The TSV adapter board according to claim 1, characterized in that: The TSV adapter plate further includes: A first metal connection structure, located on the surface of the substrate, the first metal connection structure is in contact with the through-hole structure; The second metal connection structure is located on a surface of the first metal connection structure away from the substrate.

6. The TSV adapter board according to any one of claims 1 to 5, characterized in that: The material of the first structural layer includes a gallium-containing compound, and the liquid metal includes gallium.

7. The TSV adapter board according to any one of claims 1 to 5, characterized in that: The liquid metal also includes at least one of the following: silver, indium, tin, graphene, diamond nanoparticles, and boron nitride.

8. A method for manufacturing a TSV adapter plate according to any one of claims 1 to 7, characterized in that: include: Providing a substrate, wherein the interior of the substrate has a chamber and a first structural layer covering a portion of an inner wall of the chamber, wherein a material type of the first structural layer is different from a material type of the substrate; forming a through hole structure penetrating the substrate on one side of the chamber; Liquid metal is injected into the chamber to obtain the TSV adapter plate, wherein the liquid metal and the first structural layer include the same material element.

9. The method according to claim 8, characterized in that Injecting liquid metal into the chamber to obtain the TSV adapter plate, comprising: forming a first groove sequentially penetrating the substrate and the first structural layer into the chamber; injecting the liquid metal into the chamber through the first groove; A second structure layer is filled in the first groove, and the second structure layer is cured.

10. The method according to claim 9, characterized in that Injecting the liquid metal into the chamber through the first groove comprises: placing the substrate formed with the first groove on a heating platform, wherein the temperature of the heating platform is greater than or equal to the melting point of the liquid metal; injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere; During the injection of the liquid metal, collecting image information of the chamber; According to the image information, the local temperature of the heating platform during the injection process is adjusted to eliminate some bubbles in the liquid metal material.

11. The method according to claim 10, characterized in that The heating platform is located in the perfusion chamber, the heating platform includes a plurality of heating arrays, the perfusion chamber also includes a perfusion structure containing the liquid metal, an image acquisition device and a light source, the perfusion structure is located above the heating platform, the light source is located on the side of the heating platform, the image acquisition device is located on a side of the perfusion structure away from the heating platform, and / or the image acquisition device is located on a side of the heating platform away from the light source, Injecting the liquid metal into the chamber through the first groove in a protective gas atmosphere comprises: introducing nitrogen into the perfusion chamber; opening the perfusion structure in the nitrogen atmosphere to inject the liquid metal into the chamber through the first groove, During the injection of the liquid metal, collecting image information of the chamber includes: during the injection of the liquid metal, turning on the light source; collecting the image information of the chamber by the image acquisition device and sending it to a display, so that the display displays the image information; According to the image information, adjusting the local temperature of the heating platform during the injection process includes: Determine whether there are bubbles larger than a preset diameter according to the image information; if there are bubbles larger than the preset diameter, adjust the corresponding heating temperature of the heating array according to the position of the bubbles.

12. The method according to any one of claims 8 to 10, characterized in that A substrate is provided, comprising: Providing a first sub-substrate, and removing a portion of the first sub-substrate to form a second groove extending from a surface of the first sub-substrate into the first sub-substrate; forming a first substructure layer at the bottom of the second trench; Providing a second sub-substrate, and removing a portion of the second sub-substrate to form a third groove extending from a surface of the second sub-substrate into the second sub-substrate; forming a second substructure layer at the bottom of the third trench, wherein the first substructure layer and the second substructure layer constitute the first structure layer; The first sub-substrate having the first sub-structure layer and the second sub-substrate having the second sub-structure layer are bonded with each other using the surface of the first sub-substrate and the surface of the second sub-substrate as bonding interfaces to obtain the substrate, wherein the second groove and the third groove constitute the chamber.

13. The method according to any one of claims 8 to 10, characterized in that A through hole structure penetrating the substrate is formed on one side of the chamber, comprising: removing a portion of the substrate to form a fourth initial trench extending from the first surface of the substrate into the substrate; forming an insulating layer, a barrier layer and a conductive layer in sequence on the sidewalls of the fourth initial trench to obtain a fourth trench; The substrate is ground along the second surface of the substrate until the fourth groove is penetrated to obtain the through-hole structure, and the first surface and the second surface are two opposite surfaces of the substrate.

14. The method according to claim 13, characterized in that After obtaining the through-hole structure, the method further comprises: Rewiring is performed on the first surface and the second surface to obtain a first metal connection structure in contact with the through-hole structure; A second metal connection structure is formed on a surface of the first metal connection structure away from the substrate.

15. A three-dimensional chip, characterized in that: include: A TSV adapter board according to any one of claims 1 to 7, or a TSV adapter board obtained by the method for manufacturing a TSV adapter board according to any one of claims 8 to 14.

Images