Semiconductor structure and method of forming the same

Abstract

A semiconductor structure and a forming method thereof, wherein the forming method comprises: providing a substrate; forming a first epitaxial layer with a first doping type on the substrate; forming an injection region with the first doping type in the first epitaxial layer, the injection region has a doping concentration greater than that of the first epitaxial layer; forming a second epitaxial layer with the first doping type on the first epitaxial layer; forming a base region with a second doping type in the second epitaxial layer; forming an emitter region with the first doping type in the base region; forming a collector with the first doping type in the second epitaxial layer away from the base region, the collector has a doping concentration greater than that of the second epitaxial layer, and the injection region is located between the base region and the collector in a horizontal direction. The forming method provided by the embodiment of the present application is beneficial to realize high gain and high performance of the finally formed semiconductor structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor fabrication technology, and in particular to a semiconductor structure and a method for forming the same. Background Technology

[0002] Bipolar Junction Transistors (BJTs) are important semiconductor devices in semiconductor integrated circuits. They have amplification capabilities and are widely used in various circuit designs in industrial and consumer electronics fields, such as detector circuits, rectifier circuits, amplifier circuits, switching circuits, voltage regulator circuits, signal modulation circuits, and so on.

[0003] Based on their different structures, bipolar junction transistors (BJTs) can be divided into two types: NPN and PNP. A BJT, also known as a semiconductor triode, has three external terminals: collector, emitter, and base. The collector is drawn from the collector region of the BJT, the emitter from the emitter region, and the base from the base region.

[0004] However, existing bipolar junction transistors suffer from low gain. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a semiconductor structure and a method for forming the same, which can achieve higher gain and better performance of the semiconductor structure.

[0006] To address the aforementioned technical problems, embodiments of the present invention provide a method for forming a semiconductor structure, comprising: providing a substrate; forming a first epitaxial layer having a first doping type on the substrate; forming an implantation region having a first doping type within the first epitaxial layer, wherein the doping concentration of the implantation region is greater than the doping concentration of the first epitaxial layer; forming a second epitaxial layer having a first doping type on the first epitaxial layer; forming a base region having a second doping type within the second epitaxial layer; forming an emitter region having a first doping type within the base region; forming a collector electrode having a first doping type within the second epitaxial layer away from the base region, wherein the doping concentration of the collector electrode is greater than the doping concentration of the second epitaxial layer, and the implantation region being located horizontally between the base region and the collector electrode.

[0007] Optionally, the doping concentration of the implanted region is greater than the doping concentration of the collector, and the doping concentration of the implanted region is 1E16 to 4E16 atoms / cm². 3 .

[0008] Optionally, the thickness of the injection region is 0.2 to 0.3 micrometers.

[0009] Optionally, it further includes: forming a base with a second doping type in the base region, the doping concentration of the base being greater than the doping concentration of the base region, and the base being spaced apart from the emitter region in the horizontal direction.

[0010] Optionally, after forming the base, the method further includes: forming a first isolation structure within the base region, the first isolation structure being located between the emitter region and the base.

[0011] Optionally, the method of forming a first isolation structure in the base region includes: etching the base region to form a first trench between the base and the emitter region; filling the first trench with a first isolation material to form a first isolation structure.

[0012] Optionally, the first insulating material includes polycrystalline silicon or silicon dioxide.

[0013] Optionally, the first doping type is N-type doping; the second doping type is P-type doping.

[0014] Optionally, the N-type doped ion is an N-type ion, which includes phosphorus ions or arsenic ions; the P-type doped ion is a P-type ion, which includes boron ions or indium ions.

[0015] Accordingly, embodiments of the present invention also provide a semiconductor structure formed by the above-described forming method, comprising: a substrate; a first epitaxial layer having a first doping type, the first epitaxial layer being located on the substrate; an implantation region having a first doping type, the implantation region being located within the first epitaxial layer, the doping concentration of the implantation region being greater than the doping concentration of the first epitaxial layer; a second epitaxial layer having a first doping type, the second epitaxial layer being located on the first epitaxial layer; a base region having a second doping type, the base region being located within the second epitaxial layer; an emitter region having a first doping type, the emitter region being located within the base region; and a collector having a first doping type, the collector being located within the second epitaxial layer away from the base region, the doping concentration of the collector being greater than the doping concentration of the second epitaxial layer, the implantation region being located horizontally between the base region and the collector.

[0016] Optionally, the doping concentration of the implanted region is greater than the doping concentration of the collector, and the doping concentration of the implanted region is 1E16 to 4E16 atoms / cm². 3 .

[0017] Optionally, the thickness of the injection region is 0.2 to 0.3 micrometers.

[0018] Optionally, it further includes: a base having a second doping type, the base being located within the base region, the doping concentration of the base being greater than the doping concentration of the base region, and the base being spaced apart from the emitter region in the horizontal direction.

[0019] Optionally, it further includes: a first isolation structure located within the base region and between the emitter region and the base.

[0020] Optionally, the first doping type is N-type doping; the second doping type is P-type doping.

[0021] Optionally, the N-type doped ion is an N-type ion, which includes phosphorus ions or arsenic ions; the P-type doped ion is a P-type ion, which includes boron ions or indium ions.

[0022] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0023] The formation method provided by this technical solution forms an implantation region in the first epitaxial layer. The doping type of the implantation region is the same as that of the first epitaxial layer, and the doping concentration is higher than that of the first epitaxial layer. The first and second epitaxial layers are equivalent to the collector region. Subsequently, the base region, emitter region and collector are formed in the collector region. The implantation region is located between the base region and the collector in the horizontal direction. The high doping concentration and low resistance of the implantation region can enable carriers to pass through the implantation region quickly and in a concentrated manner, thereby increasing the collector current and achieving high gain and high performance of the formed semiconductor structure.

[0024] The semiconductor structure provided by this technical solution adds an injection region within the first epitaxial layer. The injection region is located horizontally between the base region and the collector. The doping type of the injection region is the same as that of the first epitaxial layer, and the doping concentration is higher than that of the first epitaxial layer. When charge carriers move within the first and second epitaxial layers, due to the low resistance of the injection region, the charge carriers can pass through the injection region more quickly and in a more concentrated manner, thereby increasing the current amplification factor of the semiconductor structure and achieving high gain and high performance of the formed semiconductor structure. Attached Figure Description

[0025] Figures 1 to 7 This is a schematic diagram of the semiconductor structure formation process in one embodiment of the present invention. Detailed Implementation

[0026] As described in the background section, bipolar junction transistors (BJTs) are divided into two types: NPN and PNP. Taking an NPN BJT as an example, during normal operation, the emitter junction formed by the base and emitter is forward biased, and electrons from the emitter are injected into the base region. Simultaneously, under the influence of the reverse electric field formed by the base and collector, most electrons are injected into the collector. Because the base region is generally very thin and has a low doping concentration, the base current is very small, which is amplified to form the collector current. Due to the large distance between the emitter and collector in current BJT structures, resulting in a large resistance, BJT transistors suffer from low gain.

[0027] To address the aforementioned technical problems, this invention provides a semiconductor structure and its formation method. The method involves forming a first epitaxial layer and a second epitaxial layer in two steps. The first and second epitaxial layers together serve as the collector region. Before forming the second epitaxial layer, an implantation region is formed within the first epitaxial layer. This reduces the difficulty of ion implantation control during implantation, resulting in more accurate implantation location and a simpler, lower-cost process. Furthermore, the implantation region has the same doping type as the first epitaxial layer, but with a higher doping concentration. This results in a low-resistance implantation region. During carrier migration, the implantation region provides a low-resistance channel, allowing more carriers to enter the collector region from the base region, improving the current amplification factor of the semiconductor structure and achieving high gain and high performance.

[0028] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0029] Figures 1 to 7 This is a schematic diagram of the semiconductor structure formation process in one embodiment of the present invention.

[0030] refer to Figure 1 Substrate 100 is provided.

[0031] The substrate 100 is one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, or silicon on an insulator; the substrate 100 can also be a Si substrate, a Ge substrate, a GeSi substrate, or a GaAs substrate. The substrate 100 can be an N-type substrate, a P-type substrate, or an intrinsic substrate. In this embodiment, the substrate 100 is a P-type substrate.

[0032] Continue to refer to Figure 1 A buried layer 101 is formed within the substrate 100, and the buried layer 101 has N-type doped ions.

[0033] The N-type doped ions include phosphorus ions or arsenic ions.

[0034] In this embodiment, the method for forming the buried layer 101 includes: forming a first mask layer (not shown) on the surface of the substrate 100; using the first mask layer as a mask, performing N-type ion implantation on the substrate 100; removing the first mask layer and performing an annealing process to form the buried layer 101 in the substrate 100.

[0035] In this embodiment, the buried layer 101 is used to isolate the subsequently formed transistor structure from the substrate 100.

[0036] refer to Figure 2 A first epitaxial layer 200 is formed on the substrate 100, and the first epitaxial layer 200 has a first doping type.

[0037] In this embodiment, the first doping type is N-type doping, and the doping ion of the N-type doping is an N-type ion, which includes phosphorus ions or arsenic ions.

[0038] Specifically, the first doping type is determined according to the type of bipolar junction transistor formed. Specifically, when the formed semiconductor structure is an NPN transistor, the first doping type is N-type doping; when the formed semiconductor structure is a PNP transistor, the first doping type is P-type doping.

[0039] In this embodiment, the first epitaxial layer 200 is formed by an epitaxial process, which makes its overall thickness uniform and easy to control, thus improving the performance of the semiconductor structure.

[0040] In this embodiment, the thickness of the first epitaxial layer 200 is 2 micrometers. In other embodiments, the thickness of the first initial epitaxial layer 200 can be adjusted appropriately to obtain different breakdown voltages of the device.

[0041] The doping concentration of the first epitaxial layer 200 is 1E14 to 4E14 atoms / cm². 3 .

[0042] Continue to refer to Figure 2 Ion implantation is performed on the first epitaxial layer 200 to form an implantation region 201 within the first epitaxial layer 200.

[0043] In this embodiment, the method for forming the implantation region 201 includes: forming a second mask layer (not shown) on the first epitaxial layer 200, the second mask layer being used to define the size and position of the implantation region to be formed; using the second mask layer as a mask, performing ion implantation on the first epitaxial layer 200 to form the implantation region 201 within the first epitaxial layer 200; performing annealing on the first initial epitaxial layer 200; and removing the second mask layer.

[0044] In this embodiment, the doping type of the implantation region 201 is the same as that of the first epitaxial layer 200, which is N-type doping.

[0045] In this embodiment, the doping concentration of the implanted region 201 is greater than the doping concentration of the first epitaxial layer 200, and the doping concentration of the implanted region 201 is 1E16 to 4E16 atoms / cm². 3 The doping concentration affects the resistance. The high doping concentration in the implanted region 201 creates a low-resistance channel in the collector region. After the BJT transistor structure is formed, it facilitates the movement of charge carriers from the base region to the collector, which can improve the current amplification factor, achieve high gain of the semiconductor structure, and does not have a significant impact on the breakdown voltage of the semiconductor structure.

[0046] The thickness of the injection region 201 is 0.2 to 0.3 micrometers. If the thickness of the injection region 201 is too large, it will cause the breakdown voltage of the device to drop. Setting this thickness range can reduce the impact on the breakdown voltage of the device while reducing the on-resistance.

[0047] refer to Figure 3 A second epitaxial layer 202 is formed on the first epitaxial layer 200, and the second epitaxial layer 202 has a first doping type.

[0048] In this embodiment, the second epitaxial layer 202 is N-type doped.

[0049] In this embodiment, the doping concentration of the second epitaxial layer 202 is the same as that of the first epitaxial layer 200.

[0050] In this embodiment, the second epitaxial layer 202 is formed by an epitaxial process. The epitaxial process can make the thickness of the second epitaxial layer 202 uniform. The first epitaxial layer 200 and the second epitaxial layer 202 together constitute the collector region. The uniform thickness of the first epitaxial layer 200 and the second epitaxial layer 202 can withstand higher voltages.

[0051] In this embodiment, the thickness of the second epitaxial layer 202 is 1.2 micrometers.

[0052] refer to Figure 4 A base region 203 is formed within the second epitaxial layer 202, and the base region 203 has a second doping type.

[0053] In this embodiment, the second doping type is P-type doping, and the doping ion of the P-type doping is a P-type ion, which includes boron ions or indium ions.

[0054] In this embodiment, the method for forming the base region 203 includes: forming a third mask layer (not shown) on the second epitaxial layer 202, the third mask layer being used to define the size and position of the base region to be formed; using the third mask layer as a mask, performing P-type ion implantation on the second epitaxial layer 202; removing the third mask layer to form the base region 203 within the second epitaxial layer 202.

[0055] In this embodiment, the bottom of the base region 203 is higher than the bottom of the second epitaxial layer 202.

[0056] Continue to refer to Figure 4 An emitter region 204 is formed within the base region 203, and the emitter region 204 has a first doping type.

[0057] In this embodiment, the emitter region 204 is N-type doped, and the doping concentration of the emitter region 204 is higher than the doping concentration of the second epitaxial layer 202.

[0058] The doping concentration of the emitter region 204 is 1E19 to 5E19 atoms / cm². 3 .

[0059] In this embodiment, the bottom of the emission region 204 is higher than the bottom of the base region 203, and the emission region 204 is located on the side closer to the base region 203.

[0060] In this embodiment, the method for forming the emission region 204 includes: forming a fourth mask layer (not shown) on the second epitaxial layer 202, the fourth mask layer being used to define the size and position of the emission region to be formed; using the fourth mask layer as a mask, performing N-type ion implantation on the second epitaxial layer 202; removing the fourth mask layer to form the emission region 204 within the second epitaxial layer 202.

[0061] Continue to refer to Figure 4 It also includes: forming a collector 205 in the second epitaxial layer 202, wherein the doping type of the collector 205 is consistent with the doping type of the second epitaxial layer 202, and the doping concentration of the collector 205 is greater than the doping concentration of the second epitaxial layer 202.

[0062] The doping concentration of the collector 205 is 2E17 to 6E17 atoms / cm². 3 .

[0063] In this embodiment, the collector 205 is located on the side of the second epitaxial layer 202 away from the base region 203.

[0064] In this embodiment, in the horizontal direction, the injection region 201 is located between the base region 203 and the collector 205. The injection region 201 provides a low-resistance channel for the movement of charge carriers from the base region 203 to the collector 205, and the movement of charge carriers is more concentrated, which increases the number of charge carriers moving from the base region 203 to the collector 205, improves the collector current, and thus improves the current amplification factor.

[0065] It should be noted that the horizontal direction mentioned in the embodiments of the present invention refers to the direction parallel to the surface of the substrate 100 and parallel to the direction of current flow.

[0066] In this embodiment, in the direction perpendicular to the substrate 100, the end of the injection region 201 partially overlaps with the base region 203 and the collector electrode 205.

[0067] In this embodiment, the method further includes forming a base 206 on the base region 203, wherein the doping type of the base 206 is the same as that of the base region 203, and the doping concentration of the base 206 is higher than that of the base region 203.

[0068] In this embodiment, the doping concentration of the base 206 is 1E18 to 6E18 atoms / cm². 3 .

[0069] In this embodiment, the base 206 and the emitter region 204 are spaced apart in the horizontal direction.

[0070] The collector 205 serves as the lead-out terminal of the collector region, through which the collector region is electrically connected to the subsequently formed metal electrode, and then electrically connected to other semiconductor devices or external circuits; the base 206 serves as the lead-out terminal of the base region 203, through which the base region 203 is electrically connected to the subsequently formed metal electrode, and then electrically connected to other semiconductor devices or external circuits.

[0071] In this embodiment, after forming the base region 203, emitter region 204, collector 205 and base 206, the process further includes: performing an annealing process to activate the implanted ions and allow the implanted ions to diffuse to a certain extent.

[0072] refer to Figure 5 A first isolation structure 207 is formed in the base region 203, and the first isolation structure 207 is located between the emitter region 204 and the base 206.

[0073] In this embodiment, the first isolation structure 207 can reduce the parasitic parameters of the base region 203, thereby improving the current amplification factor of the semiconductor structure. The PN junction between the base 206 and the emitter 204 generates parasitic resistance, which forms crosstalk capacitance and affects the high-frequency characteristics of the transistor. By setting the first isolation structure 207 between the base 206 and the emitter 204, the contact area between the base 206 and the emitter 204 can be effectively reduced, thereby reducing parasitic parameters and improving the performance of the semiconductor device.

[0074] In this embodiment, the method for forming the first isolation structure 207 includes: forming a fifth mask layer (not shown) on the base region 203, the base region 203 further covering the surface of the second epitaxial layer 202, the fifth mask layer defining the position and size of the first isolation structure to be formed; using the fifth mask layer as a mask, etching the base region 203 to form a first trench (not shown) in the base region 203 between the emitter region 204 and the base 206; filling the first trench with a first isolation material to form the first isolation structure 207 in the base region 203.

[0075] In this embodiment, the base region 203 is etched using a dry etching process.

[0076] In this embodiment, the first isolation material is polycrystalline silicon. Polycrystalline silicon is used as the material of the first isolation structure. Polycrystalline silicon has weak conductivity and can conduct electricity under high voltage conditions, thereby optimizing the peak electric field of the isolation structure.

[0077] In other embodiments, the first insulating material may also be silicon dioxide.

[0078] The bottom of the first isolation structure 207 within the base region 203 is lower than the bottom of the emitter 204, which can enhance the isolation effect.

[0079] refer to Figure 6 It also includes: forming a second isolation structure 208 in the first epitaxial layer 200 and the second epitaxial layer 202, wherein the bottom of the second isolation structure 208 is higher than the bottom of the first epitaxial layer 200 and lower than the bottom of the second epitaxial layer 202.

[0080] In this embodiment, the second isolation structure 208 is used to isolate the collector region and the substrate 100.

[0081] In this embodiment, the method for forming the second isolation structure 208 includes: forming a sixth mask layer (not shown) on the second epitaxial layer 202, the sixth mask layer being used to define the position and size of the second isolation structure 208 to be formed; using the sixth mask layer as a mask, etching the second epitaxial layer 202 and the first epitaxial layer 200 to form a second trench (not shown) in the second epitaxial layer 202 and the first epitaxial layer 200; and filling the second trench with a second isolation material to form the second isolation structure 208.

[0082] In this embodiment, the second insulating material includes silicon dioxide; in other embodiments, the second insulating material further includes nitrides.

[0083] refer to Figure 7 It also includes: forming a metal electrode 209 on the second epitaxial layer 202, wherein the metal electrode 209 is electrically connected to the emitter region 204, the base 206 and the collector 206.

[0084] In this embodiment, the method for forming the metal electrode 209 includes: forming a seventh mask layer (not shown) on the second epitaxial layer 202, the second mask layer exposing the surfaces of the emitter region 204, the base 206, and the collector 206; forming a metal material layer (not shown) on the second mask layer, the metal material layer covering the surfaces of the emitter region 204, the base 206, and the collector 206; etching the metal material layer to form the metal electrode 209 on the surfaces of the emitter region 204, the base 206, and the collector 206.

[0085] In this embodiment, an epitaxial process is used to form a metal material layer on the second mask layer.

[0086] In this embodiment, the metal electrode 209 is made of aluminum; in other embodiments, the metal electrode 209 is made of copper, nickel, or tungsten.

[0087] Accordingly, in this embodiment of the invention, a semiconductor structure is also provided; please refer to [further details]. Figure 7The semiconductor structure includes: a substrate 100; a first epitaxial layer 200 having a first doping type, the first epitaxial layer 200 being located on the substrate 100; an implantation region 201 having a first doping type, the implantation region 201 being located within the first epitaxial layer 200, the doping concentration of the implantation region 201 being greater than the doping concentration of the first epitaxial layer 200; a second epitaxial layer 202 having a first doping type, the second epitaxial layer 202 being located on the first epitaxial layer 201; a base region 203 having a second doping type, the base region 203 being located within the second epitaxial layer 202; an emitter region 204 having a first doping type, the emitter region 204 being located within the base region 203; and a collector 205 having a first doping type, the collector 205 being located within the second epitaxial layer 202 away from the base region 203, the doping concentration of the collector 205 being greater than the doping concentration of the second epitaxial layer 202, the implantation region 201 being located horizontally between the base region 203 and the collector 205.

[0088] In this embodiment, a buried layer 101 is also included, which is located within the substrate 100 and has N-type doped ions.

[0089] In this embodiment, the first doping type is N-type doping, and the dopant ion of the N-type doping is an N-type ion, which includes phosphorus ions or arsenic ions; the second doping type is P-type doping, and the dopant ion of the P-type doping is a P-type ion, which includes boron ions or indium ions.

[0090] In this embodiment, the doping concentration of the implantation region 201 is greater than the doping concentration of the collector 205, and the doping concentration of the implantation region 201 is 1E16 to 4E16 atoms / cm². 3 .

[0091] The thickness of the injection region 201 is 0.2 to 0.3 micrometers.

[0092] In this embodiment, it further includes: a base 206 having a second doping type, the base 206 being located within the base region 203, the doping concentration of the base 206 being greater than the doping concentration of the base region 203, and the base 206 being spaced apart from the emitter region 204 in the horizontal direction.

[0093] In this embodiment, it further includes: a first isolation structure 207, which is located within the base region 203 and between the emitter region 204 and the base 206.

[0094] In this embodiment, a second isolation structure 208 is also included. The second isolation structure 208 is located within the first epitaxial layer 200 and the second epitaxial layer 202. The bottom of the second isolation structure 208 is higher than the bottom of the first epitaxial layer 200 and lower than the bottom of the second epitaxial layer 202.

[0095] In this embodiment, a metal electrode 209 is also included, which is located on the surface of the emitter region 204, the base 206 and the collector 206.

[0096] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for forming a semiconductor structure, characterized in that, include: Provide substrate; A first epitaxial layer having a first doping type is formed on the substrate; An implantation region with a first doping type is formed within the first epitaxial layer, wherein the doping concentration of the implantation region is greater than the doping concentration of the first epitaxial layer; A second epitaxial layer having a first doping type is formed on the first epitaxial layer; A base region with a second doping type is formed within the second epitaxial layer; An emitter region having a first doping type is formed within the base region; A collector electrode with a first doping type is formed in a second epitaxial layer away from the base region. The doping concentration of the collector electrode is greater than that of the second epitaxial layer. The implanted region is located between the base region and the collector electrode in the horizontal direction. In the direction perpendicular to the substrate, the end of the implanted region partially overlaps with the base region and the collector electrode.

2. The method for forming a semiconductor structure as described in claim 1, characterized in that, The doping concentration in the implanted region is 1E16~4E16 atoms / cm² 3 .

3. The method for forming a semiconductor structure as described in claim 1, characterized in that, The thickness of the injection region is 0.2~0.3 micrometers.

4. The method for forming a semiconductor structure as described in claim 1, characterized in that, Also includes: A base electrode with a second doping type is formed within the base region, the doping concentration of the base electrode being greater than the doping concentration of the base region, and the base electrode and the emitter region being spaced apart in the horizontal direction.

5. The method for forming a semiconductor structure as described in claim 4, characterized in that, After forming the base, the method further includes: forming a first isolation structure within the base region, the first isolation structure being located between the emitter region and the base.

6. The method for forming a semiconductor structure as described in claim 5, characterized in that, The method of forming a first isolation structure in the base region includes: etching the base region to form a first trench between the base and the emitter region; filling the first trench with a first isolation material to form a first isolation structure.

7. The method for forming a semiconductor structure as described in claim 6, characterized in that, The first insulating material includes polycrystalline silicon or silicon dioxide.

8. The method for forming a semiconductor structure as described in claim 1, characterized in that, The first doping type is N-type doping; the second doping type is P-type doping.

9. The method for forming a semiconductor structure as described in claim 8, characterized in that, The N-type doped ion is an N-type ion, which includes phosphorus ions or arsenic ions; the P-type doped ion is a P-type ion, which includes boron ions or indium ions.

10. A semiconductor structure, characterized in that, include: Substrate; A first epitaxial layer having a first doping type, the first epitaxial layer being located on the substrate; An implantation region having a first doping type is located within the first epitaxial layer, and the doping concentration of the implantation region is greater than the doping concentration of the first epitaxial layer. A second epitaxial layer having a first doping type, the second epitaxial layer being located on the first epitaxial layer; A base region having a second doping type, the base region being located within the second epitaxial layer; An emitter region having a first doping type is located within the base region; A collector having a first doping type is located in a second epitaxial layer away from the base region, the doping concentration of the collector being greater than the doping concentration of the second epitaxial layer, the implanted region being located between the base region and the collector in a horizontal direction, and the end of the implanted region partially overlapping the base region and the collector in a direction perpendicular to the substrate.

11. The semiconductor structure as claimed in claim 10, characterized in that, The doping concentration of the implanted region is greater than that of the collector, and the doping concentration of the implanted region is 1E16~4E16 atoms / cm². 3 .

12. The semiconductor structure as claimed in claim 10, characterized in that, The thickness of the injection region is 0.2~0.3 micrometers.

13. The semiconductor structure as described in claim 10, characterized in that, Also includes: A base having a second doping type, the base being located within the base region, the doping concentration of the base being greater than the doping concentration of the base region, and the base being spaced apart from the emitter region in the horizontal direction.

14. The semiconductor structure as described in claim 13, characterized in that, Also includes: A first isolation structure is located within the base region and between the emitter region and the base.

15. The semiconductor structure as claimed in claim 10, characterized in that, The first doping type is N-type doping; the second doping type is P-type doping.

16. The semiconductor structure as claimed in claim 15, characterized in that, The N-type doped ion is an N-type ion, which includes phosphorus ions or arsenic ions; the P-type doped ion is a P-type ion, which includes boron ions or indium ions.

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