Laminated bonding material, semiconductor package, and power module

CN119343762APending Publication Date: 2025-01-21SENJU METAL IND CO LTD
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Patent Information

Application Number
CN202380048638.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-06-22
Filing Date
2023-05-12
Publication Date
2025-01-21

AI Technical Summary

Technical Problem

In high temperature environments, the strain problem caused by the difference in CTE between the semiconductor element and the substrate, resulting in cracks in the joints and shortening the life of the power semiconductor product.

Method used

Lead-free solder is used as the joining material, and strain is relaxed by adjusting the thickness and material in the solder and performing specific treatments on the base material. Specifically, a base material with a linear expansion coefficient in the range of 7.0 to 9.9 ppm/K is used, and lead-free solder with different thicknesses is used on the semiconductor element side and the substrate side.

Benefits of technology

It effectively alleviates the strain generated at the joint in high temperature environments, significantly extends the life of semiconductor packages and power modules, and complies with environmental restrictions such as RoHS.

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Abstract

The laminated bonding material (10) has a base material (11), a first solder part (12a) laminated on a first surface of the base material (11), and a second solder part (12b) laminated on a second surface of the base material (11), the base material (11) has a linear expansion coefficient of 7.0-9.9 ppm / K, the first solder part (12a) and the second solder part (12b) are configured from a lead-free solder, the Young's modulus of the lead-free solder is 45 GPa or more, and the tensile strength is 100 MPa or less. The thickness of the first solder portion 12a is different from the thickness of the second solder portion 12b.
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Citation Information

Patent Citations

  • Bonding material, method of manufacturing the same, and semiconductor apparatus

    JP2009147111A

  • Method and apparatus for manufacturing stacked solder material having stress relaxation layer

    JP2009269075A

  • Power module

    JP2015023183A