Aluminum / molybdenum and molybdenum / aluminum / molybdenum etching solution and preparation method and application thereof

Abstract

The invention relates to the technical field of chemical etching, and provides an aluminum / molybdenum and molybdenum / aluminum / molybdenum etching solution and a preparation method and application thereof. The etching solution provided by the invention comprises 55-65% of phosphoric acid, 4-6% of nitric acid, 15-27% of acetic acid, 1-5% of an additive and 3-20% of water, the additive is prepared from one or more of polyethylene glycol, phosphotriester, sorbitan fatty acid ester, acetic ester, diethylene glycol monobutyl ether, 3-methoxy propionate and ammonium hydrogen phosphate. The etching liquid provided by the invention can simultaneously etch an aluminum / molybdenum composite metal layer and a molybdenum / aluminum / molybdenum composite metal layer of a display panel, and has the advantages of good compatibility, wide application range, high etching yield, good metal line morphology of an etched substrate, CD-Loss and a Tapper angle within a specification requirement range, and no drilling and etching, chamfering and other defects.

Description

Technical Field

[0001] The invention relates to the technical field of chemical etching, and in particular to an aluminum / molybdenum and molybdenum / aluminum / molybdenum etching solution and a preparation method and application thereof. Background Art

[0002] Thin-film transistor liquid crystal display (TFT-LCD) is a type of active matrix liquid crystal display, which has the advantages of high resolution, good color accuracy, wide viewing angle, low power consumption, fast response, good reliability, etc., and its manufacturing technology has a high degree of automation and is easy to integrate and upgrade.

[0003] The manufacturing process of TFT-LCD can be divided into three stages: array process, assembly process and module process. Among them, the array process is to make millions of thin film transistors on the substrate through film formation, etching and other methods. These transistors act as circuit switches in the operation of TFT-LCD. In the array process, there are many limiting factors for the metal materials used in the production of gate and source circuits. Aluminum and its alloys have the advantages of high conductivity, low material cost, and good graphic response. They are widely used in data lines, gate materials and source and drain electrodes of TFT-LCD. Because aluminum has limited adhesion to glass, molybdenum is often used as the bottom layer of aluminum film to solve this problem. Therefore, aluminum / molybdenum composite metal layers (Al / Mo) and molybdenum / aluminum / molybdenum (Mo / Al / Mo) composite metal layers are currently used to make metal circuits. Therefore, etching aluminum / molybdenum composite metal layers and molybdenum / aluminum / molybdenum composite metal layers is an important process stage in the production process.

[0004] In recent years, the demand for TFT-LCD has been increasing, and higher requirements have been placed on product quality and image accuracy. If the etching rates of the molybdenum layer and the aluminum layer in the etching solution do not match, it is easy to have a large taper angle and a large critical dimension loss (CD-Loss), which directly affects the accuracy and quality of the image.

[0005] At present, when etching aluminum / molybdenum composite metal layers and molybdenum / aluminum / molybdenum composite metal layers, due to the different structural compositions and thicknesses of the film layers, etching solutions with different component contents are usually required. Common etching solutions include aluminum-molybdenum etching solutions and molybdenum / aluminum / molybdenum etching solutions, among which aluminum-molybdenum etching solutions are only suitable for processing aluminum / molybdenum composite metal layers, while molybdenum-aluminum-molybdenum etching solutions are only suitable for processing molybdenum / aluminum / molybdenum composite metal layers. Therefore, current etching solutions are usually only applicable to specific composite metal layers, with a narrow scope of application, which reduces the production efficiency of the array process and increases costs.

[0006] In summary, there is an urgent need to provide an etching solution with high etching yield, strong compatibility, and applicable to different composite metal film layers. Summary of the invention

[0007] In view of this, the present invention provides an aluminum / molybdenum and molybdenum / aluminum / molybdenum etching solution and a preparation method and application thereof. The etching solution provided by the present invention has high etching yield and strong compatibility, and is suitable for etching aluminum / molybdenum composite metal layers and molybdenum / aluminum / molybdenum composite metal layers in display panels.

[0008] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0009] An etching solution comprises the following components in percentage by mass: 55-65% phosphoric acid, 4-6% nitric acid, 15-27% acetic acid, 1-5% additives, and 3-20% water;

[0010] The additives include one or more of polyethylene glycol, triester phosphate, sorbitan fatty acid ester, acetate, diethylene glycol butyl ether, 3-methoxypropionate and ammonium hydrogen phosphate.

[0011] Preferably, the triester phosphate is trimethyl phosphate; the sorbitan fatty acid ester includes one or more of sorbitan monostearate, sorbitan oleate and sorbitan monolaurate; the acetate includes one or both of 3-methoxy-3-methyl-1-butyl acetate and 3-methoxybutyl acetate; the 3-methoxypropionate is methyl 3-methoxypropionate; and the ammonium hydrogen phosphate is diammonium hydrogen phosphate.

[0012] Preferably, the additive comprises trimethyl phosphate and diammonium hydrogen phosphate; the mass ratio of the trimethyl phosphate to diammonium hydrogen phosphate is 1:1-3.

[0013] Preferably, the additive comprises trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate, and the mass ratio of the trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate is 0.9-1.1:0.9-1.1:1.9-2.1.

[0014] Preferably, the additive comprises sorbitan glyceride, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate, and the mass ratio of sorbitan glyceride, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate is 0.9-1.1:0.9-1.1:0.9-1.1:1.9-2.1.

[0015] Preferably, the additive comprises methyl 3-methoxypropionate, butyl diethylene glycol, trimethyl phosphate and diammonium hydrogen phosphate, and the mass ratio of methyl 3-methoxypropionate, butyl diethylene glycol, trimethyl phosphate and diammonium hydrogen phosphate is 0.9-1.1:1.9-2.1:0.9-1.1:1.9-2.1.

[0016] Preferably, the additive comprises trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate, and the mass ratio of trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate is 0.9-1.1:1.9-2.1:1.9-2.1.

[0017] The present invention also provides a method for preparing the etching solution described in the above scheme, comprising the following steps:

[0018] Phosphoric acid, nitric acid, acetic acid, additives and water are mixed to obtain the etching solution.

[0019] The present invention also provides the use of the etching solution described in the above scheme or the etching solution prepared by the preparation method described in the above scheme in etching an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer.

[0020] The present invention also provides an etching method, which uses an etching liquid to etch the metal layer of a display panel substrate; the metal layer is an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer; the etching liquid is the etching liquid described in the above scheme or the etching liquid prepared by the preparation method described in the above scheme.

[0021] The invention provides an etching solution, comprising the following components in percentage by mass: 55-65% phosphoric acid, 4-6% nitric acid, 15-27% acetic acid, 1-5% additives, and 3-20% water; the additives comprise one or more of polyethylene glycol, triester phosphate, sorbitan fatty acid ester, acetate, diethylene glycol butyl ether, 3-methoxypropionate, and ammonium hydrogen phosphate. The present invention adds a certain proportion of additives to the etching solution, and the additive molecules can be adsorbed on the metal surface to form a very thin protective film, thereby inhibiting the corrosion of the acid solution to the metal, preventing over-etching and controlling the etching rate; therefore, the etching solution provided by the present invention effectively solves the problems of over-etching, uneven etching, excessive CD-Loss, abnormal Taper angle, chamfer defects, etc. caused by excessive acidity of the etching solution, so that the etching solution has more stable performance, longer service life, stronger liquid compatibility, and higher etching yield; and the addition of the additive can control the etching rates of aluminum and molybdenum, so that the aluminum / molybdenum etching rates are balanced, so that the metal circuit morphology of the substrate after etching is good, and the CD-Loss and Taper angle are both within the specification requirements. At the same time, the present invention also strictly controls the concentrations of phosphoric acid, nitric acid and acetic acid in the etching solution, which can further ensure that the etching rates of the aluminum layer and the molybdenum layer match, so that the aluminum layer and the molybdenum layer can be removed at the expected speed at the same time, thereby avoiding problems such as abnormal Taper angle or etching residue, aluminum thorns, etc.; the etching solution provided by the present invention has a low acetic acid content, which can reduce the volatilization of the etching solution and improve stability. The results of the embodiment show that the etching solution of the present invention is used to etch the aluminum / molybdenum composite metal layer (A097) and the molybdenum / aluminum / molybdenum composite metal layer (A044), and the CD-Loss can be controlled at 0.2 to 0.4 μm on a single side, and the Taper angle can be controlled at 30 to 60°, and the etching is uniform and the morphology is good. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is the SEM image of the A097 substrate after etching in Example 1;

[0023] Figure 2 This is the SEM image of the A044 substrate after etching in Example 1;

[0024] Figure 3 This is the SEM image of the A097 substrate after etching in Example 2;

[0025] Figure 4 This is the SEM image of the A044 substrate after etching in Example 2;

[0026] Figure 5 This is the SEM image of the A097 substrate after etching in Example 3;

[0027] Figure 6 This is the SEM image of the A044 substrate after etching in Example 3;

[0028] Figure 7 This is the SEM image of the A097 substrate after etching in Example 4;

[0029] Figure 8 This is the SEM image of the A044 substrate after etching in Example 4;

[0030] Fig. 9 This is the SEM image of the A097 substrate after etching in Example 5;

[0031] Fig.10 This is the SEM image of the A044 substrate after etching in Example 5;

[0032] Fig.11 This is the SEM image of the A097 substrate after etching in Example 6;

[0033] Fig.12 This is the SEM image of the A044 substrate after etching in Example 6;

[0034] Fig.13 This is the SEM image of the A097 substrate after etching in Example 7;

[0035] Fig.14 This is the SEM image of the A044 substrate after etching in Example 7;

[0036] Fig.15 This is the SEM image of the A097 substrate after etching in Example 8;

[0037] Fig.16 This is the SEM image of the A044 substrate after etching in Example 8;

[0038] Fig.17 This is the SEM image of the A097 substrate after etching in Example 9;

[0039] Fig.18 This is the SEM image of the A044 substrate after etching in Example 9;

[0040] Fig.19 This is the SEM image of the A097 substrate after etching in Example 10;

[0041] Fig. 20 This is the SEM image of the A044 substrate after etching in Example 10;

[0042] Fig.21 This is the SEM image of the A097 substrate after etching in Example 11;

[0043] Fig. 22 This is the SEM image of the A044 substrate after etching in Example 11;

[0044] Fig.23This is the SEM image of the A044 substrate after etching in Example 12;

[0045] Fig.24 This is the SEM image of the A097 substrate after etching in Example 12;

[0046] Fig.25 This is the SEM image of the A044 substrate after etching in Example 13;

[0047] Fig.26 This is the SEM image of the A097 substrate after etching in Example 13;

[0048] Fig. 27 This is the SEM image of the A044 substrate after etching in Example 14;

[0049] Fig.28 This is the SEM image of the A044 substrate after etching in Example 14;

[0050] Fig.29 This is the SEM image of the A097 substrate after etching in Comparative Example 1;

[0051] Fig.30 This is the SEM image of the A044 substrate after etching in Comparative Example 1;

[0052] Fig.31 This is the SEM image of the A097 substrate after etching in Comparative Example 2;

[0053] Fig.32 This is the SEM image of the A044 substrate after etching in Comparative Example 2;

[0054] Fig.33 This is the SEM image of the A044 substrate after etching in Comparative Example 3;

[0055] Fig.34 This is the SEM image of the A097 substrate after etching in Comparative Example 3;

[0056] Fig.35 This is the SEM image of the A044 substrate after etching in Comparative Example 4;

[0057] Fig.36 This is the SEM image of the A097 substrate after etching in Comparative Example 4;

[0058] Figure 1 to Figure 36 Middle: The left side shows the photoresist before etching, and the right side shows the photoresist after etching. DETAILED DESCRIPTION

[0059] The present invention provides an etching solution, comprising the following components in mass percentage: 55-65% phosphoric acid, 4-6% nitric acid, 15-27% acetic acid, 1-5% additives, and 3-20% water;

[0060] The additives include one or more of polyethylene glycol, triester phosphate, sorbitan fatty acid ester, acetate, diethylene glycol butyl ether, 3-methoxypropionate and ammonium hydrogen phosphate.

[0061] Unless otherwise specified, all raw materials / components used in the present invention are commercially available.

[0062] In terms of mass percentage, the etching solution provided by the present invention includes 55-65% phosphoric acid, preferably 55-63%, specifically 55%, 59% or 63%.

[0063] In terms of mass percentage, the etching solution provided by the present invention comprises 4-6% nitric acid, preferably 4-5%.

[0064] In terms of mass percentage, the etching solution provided by the present invention comprises 15-27% acetic acid, preferably 17-27%, specifically 17%, 20%, 22% or 27%.

[0065] In terms of mass percentage, the etching solution provided by the present invention includes 1-5% of additives, preferably 1-3%, and specifically 1%, 1.5%, 2%, 2.5% or 3%. In the present invention, the additives include one or more of polyethylene glycol, triester phosphate, sorbitan fatty acid ester, acetate, diethylene glycol butyl ether, 3-methoxypropionate and ammonium hydrogen phosphate; the triester phosphate is preferably trimethyl phosphate; the sorbitan fatty acid ester preferably includes one or more of sorbitan monostearate, sorbitan oleate and sorbitan monolaurate; the acetate preferably includes one or two of 3-methoxy-3-methyl-1-butyl acetate and 3-methoxybutyl acetate; the 3-methoxypropionate is preferably methyl 3-methoxypropionate; the ammonium hydrogen phosphate is preferably diammonium hydrogen phosphate.

[0066] As a specific embodiment of the present invention, the additive includes trimethyl phosphate and diammonium phosphate; the mass ratio of trimethyl phosphate to diammonium phosphate is preferably 1:1-3; specifically, the mass percentage of trimethyl phosphate in the etching solution is 0.5%, and the mass percentage of diammonium phosphate is 0.5-1.5%, specifically 0.5%, 1% or 1.5%.

[0067] As a specific embodiment of the present invention, the additive includes trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate, and the mass ratio of trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate is preferably 0.9-1.1:0.9-1.1:1.9-2.1, and more preferably 1:1:2; specifically, the mass percentage of trimethyl phosphate in the etching solution is 0.5%, the mass percentage of sorbitan monostearate is 0.5%, and the mass percentage of diammonium hydrogen phosphate is 1%.

[0068] As a specific embodiment of the present invention, the additive includes sorbitol glycerate, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate, and the mass ratio of sorbitol glycerate, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate is preferably 0.9-1.1:0.9-1.1:0.9-1.1:1.9-2.1, and more preferably 1:1:1:2; specifically, the mass percentage of sorbitol glycerate in the etching solution is 0.5%, the mass percentage of sorbitan monolaurate is 0.5%, the mass percentage of polyethylene glycol is 0.5%, and the mass percentage of diammonium hydrogen phosphate is 1%.

[0069] As a specific embodiment of the present invention, the additive includes methyl 3-methoxypropionate, diethylene glycol butyl ether, trimethyl phosphate and diammonium phosphate, and the mass ratio of methyl 3-methoxypropionate, diethylene glycol butyl ether, trimethyl phosphate and diammonium phosphate is preferably 0.9-1.1:1.9-2.1:0.9-1.1:1.9-2.1, and more preferably 1:2:1:2; specifically, the mass percentage of methyl 3-methoxypropionate in the etching solution is 0.5%, the mass percentage of diethylene glycol butyl ether is 1%, the mass percentage of trimethyl phosphate is 0.5%, and the mass percentage of diammonium phosphate is 1%.

[0070] As a specific embodiment of the present invention, the additive includes trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate, and the mass ratio of trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate is preferably 0.9-1.1:1.9-2.1:1.9-2.1, and more preferably 1:2:2; specifically, the mass percentage of trimethyl phosphate in the etching solution is 1.5%, the mass percentage of 3-methoxy-3-methyl-1-butyl acetate is 1%, and the mass percentage of diammonium phosphate is 1%.

[0071] In terms of mass percentage, the etching solution provided by the present invention comprises 3-20% water; the water is pure water, specifically ultrapure water.

[0072] The present invention also provides a method for preparing the etching solution described in the above scheme, comprising the following steps:

[0073] Phosphoric acid, nitric acid, acetic acid, additives and water are mixed to obtain the etching solution.

[0074] In the present invention, the phosphoric acid is electronic grade phosphoric acid, the nitric acid is electronic grade nitric acid, and the acetic acid is electronic grade acetic acid.

[0075] The present invention has no special requirements for the mixing method, as long as the above components can be mixed evenly.

[0076] The present invention also provides the use of the etching solution described in the above scheme or the etching solution prepared by the preparation method described in the above scheme in etching the aluminum / molybdenum composite metal layer and the molybdenum / aluminum / molybdenum composite metal layer; in the present invention, the total thickness of the aluminum / molybdenum composite metal layer is preferably The total thickness of the molybdenum / aluminum / molybdenum composite metal layer is preferably In a specific embodiment of the present invention, a display panel substrate coated with an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer is etched, such as substrates with models A097, A044, A126, and A138, wherein the surfaces of substrates with models A097 and A138 are coated with an aluminum / molybdenum composite metal layer, and the surfaces of substrates with models A126 and A044 are coated with a molybdenum / aluminum / molybdenum composite metal layer.

[0077] The present invention also provides an etching method, which uses an etching liquid to etch the metal layer of a display panel substrate; the metal layer is an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer; the etching liquid is the etching liquid described in the above scheme or the etching liquid prepared by the preparation method described in the above scheme; the present invention has no special requirements for the specific method and steps of the etching, and those familiar to technical personnel in this field can be used.

[0078] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0079] Example 1

[0080] In terms of mass percentage, the etching solution of this embodiment has the following components: 55% phosphoric acid, 4% nitric acid, 20% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0081] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0082] Example 2

[0083] In terms of mass percentage, the etching solution of this embodiment has the following components: 59% phosphoric acid, 4% nitric acid, 20% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0084] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0085] Example 3

[0086] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 4% nitric acid, 20% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0087] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0088] Example 4

[0089] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 4.5% nitric acid, 20% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0090] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0091] Example 5

[0092] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 5% nitric acid, 20% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0093] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0094] Example 6

[0095] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 5% nitric acid, 17% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0096] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0097] Example 7

[0098] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0099] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0100] Example 8

[0101] In terms of mass percentage, the etching solution of this embodiment has the following components: 63% phosphoric acid, 5% nitric acid, 27% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0102] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0103] Example 9

[0104] In terms of mass percentage, the etching solution of this embodiment has the following components: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 0.5% sorbitan monostearate, 1% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0105] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0106] Example 10

[0107] In terms of mass percentage, the etching solution components of this embodiment are as follows: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% sorbitan glycerate, 0.5% sorbitan monolaurate, 0.5% polyethylene glycol, 1% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0108] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0109] Embodiment 11

[0110] In terms of mass percentage, the etching solution components of this embodiment are as follows: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% methyl 3-methoxypropionate, 1% diethylene glycol butyl ether, 0.5% trimethyl phosphate, 1% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0111] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0112] Example 12

[0113] In terms of mass percentage, the etching solution components of this embodiment are as follows: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 1% 3-methoxy-3-methyl-1-butyl acetate, 1% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0114] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0115] Example 13

[0116] In terms of mass percentage, the etching solution of this embodiment has the following components: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 1% trimethyl phosphate, 2% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0117] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0118] Embodiment 14

[0119] In terms of mass percentage, the etching solution of this embodiment has the following components: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 0.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0120] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0121] Comparative Example 1

[0122] In terms of mass percentage, the etching solution of this comparative example has the following components: 50% phosphoric acid, 5% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0123] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0124] Comparative Example 2

[0125] In terms of mass percentage, the etching solution of this comparative example has the following components: 59% phosphoric acid, 3% nitric acid, 22% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0126] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0127] Comparative Example 3

[0128] In terms of mass percentage, the etching solution of this comparative example has the following components: 59% phosphoric acid, 4% nitric acid, 30% acetic acid, 0.5% trimethyl phosphate, 1.5% diammonium hydrogen phosphate, and the balance is ultrapure water.

[0129] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0130] Comparative Example 4

[0131] In terms of mass percentage, the etching solution of this comparative example has the following components: 59% phosphoric acid, 5% nitric acid, 22% acetic acid, and the balance being ultrapure water.

[0132] The preparation method of the etching solution is as follows: uniformly mix the raw materials according to the above ratio to obtain the etching solution, wherein the phosphoric acid, nitric acid and acetic acid used to prepare the etching solution are all electronic grade.

[0133] Test Case

[0134] The etching experiments were carried out using the etching solutions prepared in Examples 1 to 14 and Comparative Examples 1 to 4. The substrates used were A097 and A044, wherein the surface of A097 was an aluminum / molybdenum composite metal layer with a total thickness of The surface of A044 is a molybdenum / aluminum / molybdenum composite metal layer with a total thickness of

[0135] The specific steps are as follows:

[0136] Place 100mL of etching solution in a 250mL beaker, keep the temperature in a water bath at 38℃, and place a 3cm×3cm substrate in the solution. Take out the sample after a certain period of time, clean it with a water spray system, and then blow it dry with an air knife. Observe whether the etching is complete under a metallographic optical microscope (OM), and observe the changes in the shrinkage and Taper angle under a scanning electron microscope (SEM). The test results are shown in Table 1.

[0137] Table 1 Experimental results

[0138]

[0139] The SEM images of the substrates after etching of Examples 1 to 14 and Comparative Examples 1 to 4 are shown in Figure 1 to Figure 36 .

[0140] It can be seen from Table 1 that the etching solution of the present invention is used to etch the aluminum / molybdenum composite metal layer and the molybdenum / aluminum / molybdenum composite metal layer, and the Taper angle can be controlled at 30-60°, and the CD-Loss on both sides is 0.4-0.8 μm. In Comparative Example 1, the amount of phosphoric acid used is less, the amount of nitric acid used in Comparative Example 2 is less, and the amount of acetic acid used in Comparative Example 3 is excessive. The etching solutions of the three groups of comparative examples not only have a slow etching rate and a long etching time, but also have a large Taper angle when etching the A097 substrate (aluminum / molybdenum composite metal layer), and a large CD-Loss when etching the A044 substrate (molybdenum / aluminum-molybdenum composite metal layer), which cannot meet the etching requirements; in Comparative Example 4, the additive is omitted, and the CD-Loss of the obtained etching solution is too high, which cannot meet the etching requirements.

[0141] according to Figure 1 to Figure 36 It can be seen that when the etching solution of the present invention is used to etch the A097 substrate and the A044 substrate, the metal circuit morphology of the etched substrate is good, and no drilling and chamfering phenomena occur. However, when the etching solutions of Comparative Examples 1 to 3 are used for etching, the Taper angle of the A097 substrate is too large, and when the etching solution of Comparative Example 4 is used for etching, the CD-Loss of the etching solution for the A097 substrate and the A044 substrate is relatively large; therefore, the etching solutions of Comparative Examples 1 to 4 cannot meet the etching requirements.

[0142] In summary, the etching solution provided by the present invention can simultaneously meet the requirements of etching the aluminum / molybdenum composite metal layer and the molybdenum / aluminum / molybdenum composite metal layer of the display panel, has good compatibility, a wide range of applications, and the metal circuit morphology of the substrate after etching is good, and the CD-Loss and Taper angles are within the specification requirements, and defects such as drilling and chamfering will not occur.

[0143] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An etching solution, characterized in that: The invention comprises the following components in percentage by weight: 55-65% phosphoric acid, 4-6% nitric acid, 15-27% acetic acid, 1-5% additives, and 3-20% water; The additives include one or more of polyethylene glycol, triester phosphate, sorbitan fatty acid ester, acetate, diethylene glycol butyl ether, 3-methoxypropionate and ammonium hydrogen phosphate.

2. The etching solution according to claim 1, characterized in that The triester phosphate is trimethyl phosphate; the sorbitan fatty acid ester includes one or more of sorbitan monostearate, sorbitan oleate and sorbitan monolaurate; the acetate includes one or two of 3-methoxy-3-methyl-1-butyl acetate and 3-methoxybutyl acetate; the 3-methoxypropionate is methyl 3-methoxypropionate; and the ammonium hydrogen phosphate is diammonium hydrogen phosphate.

3. The etching solution according to claim 2, characterized in that The additives include trimethyl phosphate and diammonium phosphate; the mass ratio of the trimethyl phosphate to diammonium phosphate is 1:1-3.

4. The etching solution according to claim 2, characterized in that The additives include trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate, and the mass ratio of the trimethyl phosphate, sorbitan monostearate and diammonium hydrogen phosphate is 0.9-1.1:0.9-1.1:1.9-2.

1.

5. The etching solution according to claim 2, characterized in that The additives include sorbitol glycerate, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate, and the mass ratio of the sorbitol glycerate, sorbitan monolaurate, polyethylene glycol and diammonium hydrogen phosphate is 0.9-1.1:0.9-1.1:0.9-1.1:1.9-2.

1.

6. The etching solution according to claim 2, characterized in that The additives include methyl 3-methoxypropionate, diethylene glycol butyl ether, trimethyl phosphate and diammonium hydrogen phosphate, and the mass ratio of methyl 3-methoxypropionate, diethylene glycol butyl ether, trimethyl phosphate and diammonium hydrogen phosphate is 0.9-1.1:1.9-2.1:0.9-1.1:1.9-2.

1.

7. The etching solution according to claim 2, characterized in that: The additives include trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate, and the mass ratio of the trimethyl phosphate, 3-methoxy-3-methyl-1-butyl acetate and diammonium phosphate is 0.9-1.1:1.9-2.1:1.9-2.

1.

8. The method for preparing the etching solution according to any one of claims 1 to 7, characterized in that: The following steps are involved: Phosphoric acid, nitric acid, acetic acid, additives and water are mixed to obtain the etching solution.

9. Use of the etching solution according to any one of claims 1 to 7 or the etching solution prepared by the preparation method according to claim 8 in etching an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer.

10. An etching method, characterized in that: The metal layer of the display panel substrate is etched by an etching liquid; the metal layer is an aluminum / molybdenum composite metal layer or a molybdenum / aluminum / molybdenum composite metal layer; the etching liquid is the etching liquid described in any one of claims 1 to 7 or the etching liquid prepared by the preparation method described in claim 8.

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